WO2011065359A1 - モノシラン及びテトラアルコキシシランの製造方法 - Google Patents
モノシラン及びテトラアルコキシシランの製造方法 Download PDFInfo
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- WO2011065359A1 WO2011065359A1 PCT/JP2010/070883 JP2010070883W WO2011065359A1 WO 2011065359 A1 WO2011065359 A1 WO 2011065359A1 JP 2010070883 W JP2010070883 W JP 2010070883W WO 2011065359 A1 WO2011065359 A1 WO 2011065359A1
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Definitions
- the present invention relates to a method for producing monosilane and tetraalkoxysilane by disproportionation reaction of alkoxysilane.
- Monosilane is useful as a high-purity volatile silicon material, and is widely used for manufacturing solar cells, semiconductors, amorphous silicon photosensitive materials, and various ceramic materials.
- the above disproportionation reaction of alkoxysilane usually uses trialkoxysilane as a starting material and has the following formula: Accordingly, monosilane and tetraalkoxysilane are produced.
- Tetraalkoxysilane as well as monosilane is a useful chemical as a pure silicon precursor material for the production of different silicon compounds for optical fiber, photomask and IC encapsulants.
- Triethoxysilane and trimethoxysilane are used as starting materials for the above disproportionation reaction, and tetraethoxysilane and tetramethoxysilane are produced together with monosilane, respectively, as shown in the following formula.
- metallic sodium can be used as a catalyst for the disproportionation reaction.
- the yield was low and therefore the method was not practically useful.
- Patent Document 1 US Pat. No. 4,016,188 describes a method using an alkali metal alkoxide or an alkali metal silicate as a catalyst.
- the reaction in the liquid phase is very slow and the reaction time is more than 10 hours, which is not suitable for industrial production.
- Patent Document 2 Japanese Patent Laid-Open No. 2001-194178 discloses a general formula H n Si (OR) 4-n wherein n is 1, 2 or 3, and R represents an alkyl group or a cycloalkyl group. .
- the alkoxysilane is disproportionated in a solvent in the presence of a catalyst to convert the monosilane and tetraalkoxysilane to (Ii) a step of extracting a part of the solvent containing the catalyst and tetraalkoxysilane from the reaction step, (iii) a part of the tetraalkoxysilane by distillation from the extracted catalyst and the solvent containing tetraalkoxysilane, or
- a method for producing monosilane and tetraalkoxysilane comprising the step of separating the total amount is disclosed.
- this method is also a disproportionation reaction in a solution and has a problem that it is difficult to separate from a solvent and a problem that the reaction rate is not sufficiently high.
- Patent Document 3 (WO 2008/042445 pamphlet) describes a method of disproportionating trimethoxysilane to give monosilane and tetramethoxysilane on a potassium fluoride (KF) catalyst supported on alumina. ing. This method does not have a problem of separating the catalyst and the like from the reaction product, but the conversion rate of trimethoxysilane is not sufficiently high.
- KF potassium fluoride
- the present invention is difficult to separate from the solvent as described above, the reaction is very slow and is not suitable for industrial production, And it aims at providing the method of solving the problem that the conversion rate of a raw material is low.
- Z is 0.15 to 3.5).
- M represents Zr, Ti, Sn or Si
- x is 0.5 to 4.5
- y is 0.15 to 6.5.
- M represents Zr, Ti, Sn or Si
- M I represents a hydrogen atom, NH 4 , or an alkali metal
- x is 0.5 to 4.5
- z is 0.15 to 3.5.
- M I represents a hydrogen atom, NH 4 , or an alkali metal
- M II represents P (V) or As (V)
- M III represents W (VI) or Mo (VI)
- k is 6, 12, 18 or 24, j is 24, 40 or 42
- m is an integer determined by the formula: 2j-5n-6k).
- M I represents a hydrogen atom, NH 4 , or an alkali metal
- M IV represents Si (IV), Ge (IV), Ti (IV), or Ce (IV)
- M III represents W (VI ) Or Mo (VI)
- n is an integer from 1 to 3
- k is 6, 12, 18 or 24, j is 24, 40 or 42
- m is an integer determined by the formula: 2j-4n-6k is there.).
- monosilane and tetraalkoxysilane are produced by disproportionation of alkoxysilane, and it is difficult to separate from a solvent by reacting in a gas phase using a catalyst having a specific chemical structure. It is possible to solve the problem that there is, the problem that the reaction is very slow, and the problem that the conversion rate of the raw material is low.
- the present invention is a method for producing monosilane and tetraalkoxysilane, characterized in that an alkoxysilane represented by the following general formula (1) is disproportionated in the gas phase in the presence of a catalyst having a specific chemical structure. is there.
- R represents an alkyl group having 1 to 6 carbon atoms, and n is an integer of 1 to 3.
- R is an alkyl group having 1 to 6 carbon atoms, preferably an alkyl group having 1 to 2 carbon atoms.
- Particularly preferred alkoxysilanes include monomethoxysilane, dimethoxysilane, trimethoxysilane, monoethoxysilane, diethoxysilane and triethoxysilane. Of these, trimethoxysilane and triethoxysilane are most preferred.
- the disproportionation catalyst for the process of the present invention is a catalyst having a chemical structure based on an inorganic phosphate or heteropolyacid salt structure.
- the first alkoxysilane disproportionation catalyst of the present invention is selected from the group of inorganic phosphates having the following chemical structure.
- M represents Zr, Ti, Sn or Si
- M I represents a hydrogen atom, NH 4 or an alkali metal
- x is 0.5 to 4.5
- y is 0.15 to 6.5
- Z is from 0.15 to 3.5.
- a general method is a method of forming a metal oxide sol selected from Zr, Ti, Sn and Si in an aqueous solution at a low temperature by a known appropriate procedure.
- a method of hydrolyzing alkoxide and a method of peptizing a precipitate of metal oxide MO 2 selected from Zr, Ti, Sn and Si with phosphoric acid or alkali.
- the resulting sol can be stabilized with a phosphoric acid solution and subsequently deposited by heating or alkaline treatment.
- a conventionally known high temperature heat treatment can be applied to the corresponding salt or oxide mixture.
- freezing chemistry methods including preparation of catalyst nuclei, low temperature sublimation and stabilization of the catalyst in an aqueous solution can be used.
- This group of catalysts represents a mixed phosphate of a monovalent cation and a metal selected from Zr, Ti, Sn and Si.
- An example of this salt is K 2 Ti (PO 4 ) 2 (H 2 O) 0.3 , ie (K 2 O) (TiO 2 ) (P 2 O 5 ) (H 2 O) 0.3 .
- This can be prepared in the form of a hemihydrate by normal high temperature annealing of a mixture of TiO 2 and KH 2 PO 4 in a molar ratio of 1: 2 and 15% by weight of water. During heating, the temperature is raised to 400 ° C. while slowly releasing moisture.
- the second alkoxysilane disproportionation catalyst of the present invention is selected from the group of inorganic phosphates having the following chemical structure.
- M represents Zr, Ti, Sn or Si
- x is 0.5 to 4.5
- y is 0.15 to 6.5.
- y is 1.0 to 5.0
- the compound shown by these is preferable.
- the compound represented by the general formula (IIa) is known as a zirconium phosphate salt represented by Zr (HPO 4 ) 2 .nH 2 O.
- formula (ZrO 2) y is 1.3 (P 2 O 5) ( H 2 O) 1.3, and y is 3 formula (ZrO 2) (P 2 O 5) (H 2 O) 3
- the compound shown by is especially preferable.
- These compounds can also be expressed as Zr (HPO 4 ) 2 .0.3H 2 O, Zr (HPO 4 ) 2 ⁇ 2H 2 O.
- the third alkoxysilane disproportionation catalyst of the present invention is selected from the group of inorganic phosphates having the following chemical structure.
- M represents Zr, Ti, Sn or Si
- M I represents a hydrogen atom, NH 4 , or an alkali metal
- x is 0.5 to 4.5
- z is 0.15 to 3.5.
- the compound shown by these is preferable.
- the compound represented by the general formula (IIIa) can also be expressed as M I (MO) PO 4 .
- the formula (K 2 O) 0.5 (TiO 2 ) (P 2 O 5 ) 0.5 in which M I is K and M is Ti, that is, K (TiO) PO 4 is particularly preferred.
- This catalyst can be prepared by several suitable methods. Production examples are as follows.
- a colloidal solution (TiO 2 precursor from titanium tetraalkoxide or oxychloride) is prepared.
- the fourth alkoxysilane disproportionation catalyst of the present invention is selected from the group of compounds having the following chemical structure.
- M I represents a hydrogen atom, NH 4 , or an alkali metal
- M II represents P (V) or As (V)
- M III represents W (VI) or Mo (VI)
- k is 6, 12, 18 or 24, j is 24, 40 or 42
- m is an integer determined by the formula: 2j-5n-6k.
- This group of catalysts are anionic complex compounds. That is a heteropoly acid having a hexavalent ligand around the element M II to form a complex within the coordination sphere.
- This catalyst represents a heteropolyacid having a monovalent cation or a salt thereof, contains pentavalent phosphorus and arsenic as elements forming a complex, and molybdenum salt or tungsten as an anionic ligand in the internal coordination region.
- Has salt is
- the fifth alkoxysilane disproportionation catalyst of the present invention is selected from the group of compounds having the following chemical structure.
- M I represents a hydrogen atom, NH 4 , or an alkali metal
- M IV represents Si (IV), Ge (IV), Ti (IV), or Ce (IV)
- M III represents W (VI) or Mo (VI) is represented.
- n is an integer of 1 to 3
- k is 6, 12, 18 or 24, j is 24, 40 or 42
- m is an integer determined by the formula (2j-4n-6k).
- This group of catalysts also relates to heteropolyacids or their salts.
- This catalyst contains Si (IV), Ge (IV), Ti (IV) or Ce (IV), which are tetravalent metals, as elements forming the complex.
- the general formula (Va) in which M IV is Si (IV) and n is 1 In the formula, M I , M III , k, j and m have the same meaning as described above.
- the compound shown by these is preferable.
- Examples of this type of catalyst include Na 8 [TiMo 6 O 24 ] and K 4 [SiW 12 O 40 ], among which K 4 [SiW 12 O 40 ] is particularly preferable.
- the catalyst represented by the above general formula (IV) or (V) can be prepared by an appropriate method known as a method for producing the respective heteropolyacids or salts thereof.
- a typical method is a method in which a molybdenum salt or a tungsten salt is reacted with phosphoric acid in an acidic aqueous solution and then dried. The reaction in the case of molybdenum salt is shown in the following formula.
- the target catalyst is obtained by partial moisture evaporation, impregnation with an inorganic carrier, and heat treatment.
- the corresponding heteropolyacid salt is prepared by using a method selected from the following two methods. (I) slowly treating the heteropolyacid with a metal hydroxide or carbonate; (Ii) Neutralize the surface of the supported heteropolyacid using a cation exchange method.
- Most of the structure of the catalyst of the present invention is used as a solid. They can be used both in solid particulate form or in the form of a catalyst supported on alumina, titania, silica, carbon and other types of inert inorganic supports.
- catalyst of the present invention there is deposition of the catalyst of the present invention on the surface of an ion exchange resin.
- useful ion exchange resins for preparing the supported catalyst of the present invention include cross-linked cation exchange resins having no phosphate group.
- the catalyst thus obtained is effective for the purpose of the present invention when used in an amount of at least 0.02 parts by mass with respect to 100 parts by mass of alkoxysilane as a starting material. These are usually used in the range of 0.02 to 50 parts by mass, preferably 0.1 to 20 parts by mass.
- the disproportionation reaction can be carried out both batchwise and continuously flowing.
- the alkoxysilanes and catalysts used as starting materials are not chemically reactive, so that the process can be carried out without any special restrictions with respect to the equipment materials. Therefore, since various types of reactors can be used, it can be said that the catalyst system is suitable for an industrial production method.
- the disproportionation reaction is preferably performed under heating and at atmospheric pressure.
- the preferred temperature depends on the starting alkoxysilane used, but is usually in the range of 100-200 ° C.
- the reaction pressure of the disproportionation reaction can be carried out in the range of 0.2 to 10 atmospheres, and since it does not significantly depend on the pressure, it is preferable to carry out the process under atmospheric pressure.
- the reaction product monosilane is known to ignite as soon as it is exposed to air. Therefore, in order to prevent the reaction medium containing monosilane from being ignited by contact with air oxygen, the reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon.
- the monosilane produced by the reaction has a boiling point of -111.9 ° C. and is collected in a gaseous form after being taken out from the reactor. Tetraalkoxysilane remains in the reactor in the batch mode.
- the tetraalkoxysilane and unreacted trialkoxysilane pass through the reactor, the tetraalkoxysilane is condensed, and the trialkoxysilane is returned to the catalytic reactor.
- the catalyst used in the present invention is insoluble in both starting materials and reaction products and can be used during long periods of operation.
- Comparative Example 1 The active form of potassium fluoride is recrystallized by slowly evaporating the solvent under reduced pressure in a solution of potassium fluoride and dry methanol (1:13 to 20 parts by mass), and then the temperature is raised. Prepared by drying. It is preferred that the methanol used for purification not only be American Pharmacopoeia Test Compliant (A.C.S.) with a purity greater than 99.9%, but also utilize a dry nitrogen atmosphere. In the step of evaporating methanol, a temperature of 25 to 35 ° C. is good. Subsequent vacuum drying should be performed in the range of 75-120 ° C. for at least 5-6 hours. Potassium fluoride-carrying alumina was prepared as follows.
- a mixture of evaporated trimethoxysilane (flow rate 3.5 ml / min) and helium (flow rate 35 ml / min) is heated to 120 ° C. in a preheater and then fed to the reaction tube where the disproportionation reaction is carried out at 120 ° C. Carried out.
- the gaseous reaction mixture emerging from the reaction tube was analyzed by gas chromatography (GC) every 20 minutes.
- GC gas chromatography
- the conversion rate of trimethoxysilane was 63%
- the yield of monosilane with respect to the supplied trimethoxysilane was 63% (that is, the yield of monosilane with respect to the converted trimethoxysilane was 100%)
- the yield of tetramethoxysilane was 63% (that is, the yield of tetramethoxysilane with respect to the converted trimethoxysilane was 100%).
- No by-products were detected by GC.
- the obtained granular product was spherical with a diameter of 0.8 to 1.6 mm, and the specific surface area was 35 m 2 / g.
- X-ray examination showed that the product was amorphous.
- this product had a chemical structure in which x is 1 and y is 3 in the above general formula (II). That is, the chemical structure of the obtained product corresponds to the formula: (ZrO 2 ) (P 2 O 5 ) (H 2 O) 3 .
- This product was preheated at 130 ° C. under a helium flow for 1 hour after filling the test cell and before supplying trimethoxysilane.
- This product was used as a catalyst for the trimethoxysilane disproportionation reaction, and its catalytic activity was evaluated in the same manner as in Comparative Example 1. The results are shown in Table 1.
- Examples 2 to 9 The catalysts of Examples 2 to 9 were prepared by the following method.
- Catalyst of Example 2 The catalyst of Example 1 was treated with a sodium chloride solution for ion exchange, and then washed and dried.
- Catalyst of Example 3 The catalyst of Example 1 was titrated with a potassium carbonate K 2 CO 3 solution, and then washed and dried.
- Catalyst of Example 5 Titanium oxide TiO 2 was treated with phosphoric acid H 3 PO 4 solution and potassium carbonate K 2 CO 3 solution, and the resulting K (TiO) PO 4 sol was treated with alumina ( ⁇ -Al 2 O 3 ). Coated on top.
- Example 6 catalyst phosphotungstic acid supported on carbon particles
- Example 7 catalyst sodium phosphomolybdate supported on carbon particles
- Catalyst of Example 8 Mixture of ammonium phosphotungstate powder and alumina pellets
- Catalyst of Example 9 Mixture of potassium silicotungstate powder and alumina pellets.
- the above catalyst was used as a catalyst for trimethoxysilane disproportionation reaction, and its catalytic activity was evaluated.
- Examples 10-15 Using the catalyst and alkoxysilane shown in Table 2, the disproportionation reaction and the product were analyzed in the same manner as in Comparative Example 1. The selectivity was calculated by mol% of the ratio of tetraalkoxysilane to the total amount of mono, di, tri and tetraalkoxysilane. Other impurities such as alcohol or siloxane dimer were not detected in the reaction product. The results are shown in Table 2. It can be seen from Table 2 that the efficiency of the catalyst of the present invention tested is high. The conversion rate can be improved by increasing the contact time between the gaseous reaction mixture and the catalyst in the reactor.
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Abstract
Description
で示されるアルコキシシランを、特定の化学構造の触媒の存在下で、気相で不均化反応させることにより、上記課題を解決できることを見出した。
[1] 一般式(1)
で示されるアルコキシシランを触媒の存在下で、気相で不均化反応に付してモノシラン及びテトラアルコキシシランを製造する方法において、
下記一般式(I)~(V)で示される化合物群から選ばれる少なくとも1つの触媒を用いることを特徴とするモノシラン及びテトラアルコキシシランの製造方法:
[2]触媒として、一般式(I)において、xが1、zが1である一般式(Ia)
で示される化合物を用いる前項[1]に記載のモノシラン及びテトラアルコキシシランの製造方法。
[3]MがZrまたはTiである前項[2]に記載のモノシラン及びテトラアルコキシシランの製造方法。
[4]触媒として、一般式(II)において、MがZr、xが1である一般式(IIa)
で示される化合物を用いる前項[1]に記載のモノシラン及びテトラアルコキシシランの製造方法。
[5]yが1.3または3である前項[4]に記載のモノシラン及びテトラアルコキシシランの製造方法。
[6]触媒として、一般式(III)において、xが0.5、zが0.5である一般式(IIIa)
で示される化合物を用いる前項[1]に記載のモノシラン及びテトラアルコキシシランの製造方法。
[7]一般式(IIIa)において、MIがK、MがTiである式
[8]触媒として、一般式(IV)において、MIIがP(V)、nが1である一般式(IVa)
で示される化合物を用いる前項[1]に記載のモノシラン及びテトラアルコキシシランの製造方法。
[9]触媒として、一般式(V)において、MIVがSi(IV)、nが1である一般式(Va)
で示される化合物を用いる前項[1]に記載のモノシラン及びテトラアルコキシシランの製造方法。
[10]一般式(Va)において、MIがK、MIIIがW(VI)、kが12、jが40、mが4である式
で示される化合物が好ましく、MがZrまたはTiである化合物が特に好ましい。
上記一般式(II)で示される触媒のうち、MがZr、xが1である一般式(IIa)
で示される化合物が好ましい。一般式(IIa)で示される化合物は、Zr(HPO4)2・nH2Oで示されるリン酸ジルコニウム塩として知られている。中でも、yが1.3である式(ZrO2)(P2O5)(H2O)1.3、及びyが3である式(ZrO2)(P2O5)(H2O)3で示される化合物が特に好ましい。これらの化合物はZr(HPO4)2・0.3H2O、Zr(HPO4)2・2H2Oと表記することもできる。
上記一般式(III)で示される触媒のうち、xが0.5、zが0.5である一般式(IIIa)
で示される化合物が好ましい。一般式(IIIa)で示される化合物は、MI(MO)PO4と表記することもできる。中でも、MIがK、MがTiである式(K2O)0.5(TiO2)(P2O5)0.5、すなわちK(TiO)PO4が特に好ましい。
(a)コロイド性溶液(チタンテトラアルコキシドまたはオキシクロライドからのTiO2前駆体)を調製する。
(b)続いて、ゾル溶液をリン酸及び炭酸カリウムの希釈水溶液と混合する。
(c)混合して得られたK(TiO)PO4コロイド溶液をγ―アルミナ担体に塗布し、500~550℃で熱処理する。コーティング部分を分析することによりK(TiO)PO4の生成を確認することができる。
で示される化合物が好ましい。
このタイプの触媒の例としては、K3[PMo12O40]、H7[PMo12O42]、H3[PMo12O40]、H7[PW12O42]が挙げられる。
上記式(V)で示される触媒のうち、MIVがSi(IV)、nが1である一般式(Va)
で示される化合物が好ましい。
このタイプの触媒の例としては、Na8[TiMo6O24]、K4[SiW12O40]が挙げられるが、中でもK4[SiW12O40]が特に好ましい。
典型的な方法は、酸性水溶液中においてモリブデン塩またはタングステン塩とリン酸とを反応させ、次いで乾燥する方法である。モリブデン塩の場合の反応を次式に示す。
(i)ヘテロポリ酸を金属水酸化物または炭酸塩でゆっくり処理する、
(ii)カチオン交換法を用いて、担持されたヘテロポリ酸の表面を中和する。
したがって、種々の異なるタイプの反応器を使用することができるので、工業的な製造方法にふさわしい触媒システムと言える。
活性型のフッ化カリウムを、フッ化カリウムと乾燥メタノール(1:13~20質量部)の溶液を減圧下、溶媒をゆっくり蒸発させることによってフッ化カリウムの再結晶を行い、次いで昇温させながら乾燥することによって調製した。
精製に使用されるメタノールは、純度が99.9%超のアメリカ薬局方試験適合(A.C.S.)であることだけでなく、乾燥窒素雰囲気を利用することが好ましい。メタノールを蒸発させる段階では、25~35℃の温度がよい。
続く真空での乾燥は、少なくとも5~6時間の間、75~120℃の範囲で行うべきである。
フッ化カリウム担持アルミナは、以下のように調製した。粒径0.3~1.0mmの中性アルミナ30gと前記のように再結晶で調製したフッ化カリウム20gを200mlの脱イオン水と混合した。弱く脱気しながら、溶媒を50~60℃で蒸発させ、残った生成物を3時間、脱気しながら乾燥した。
次に、この生成物をトリメトキシシラン不均化反応の触媒として使用し、モノシラン及びテトラアルコキシシランを調製するプロセスは次のように実施した。電気炉を備えたPyrex(登録商標)ガラス製反応チューブに1.0gのフッ化カリウム担持アルミナを充填し、120℃に加熱した。蒸発させたトリメトキシシラン(流速3.5ml/min)及びヘリウム(流速35ml/min)の混合物を予熱器中で120℃に加熱し、次いで反応チューブに供給し、120℃で不均化反応を実施した。反応チューブから出てきたガス状の反応混合物は、20分ごとにガスクロマトグラフィー(GC)によって分析した。
反応開始10分後、未反応のトリメトキシシラン、生成したモノシラン及びテトラメトキシシランの割合は、反応生成物中で実質的に一定であった。ジメトキシシラン及びモノメトキシシランは、最初の1時間経過後の反応中で不検出であった。
5時間の流通反応を行った後の分析は次の結果を示した。
すなわち、トリメトキシシランの転化率は63%、供給されたトリメトキシシランに対するモノシランの収率は63%(つまり転化したトリメトキシシランに対するモノシランの収率は100%)、供給されたトリメトキシシランに対するテトラメトキシシランの収率は63%(つまり転化したトリメトキシシランに対するテトラメトキシシランの収率は100%)であった。いかなる副生物もGCで検出されなかった。
水和された二酸化ジルコニウムのゾルを、原子比P/Zr=2.0で、1.0M/LのH3PO4溶液で処理し、一定質量になるまで105℃で乾燥した。得られた顆粒状の生成物は、直径0.8~1.6mmの球状で、比表面積は35m2/gであった。X線試験により生成物がアモルファスであることを示した。化学分析により、この生成物は、上記一般式(II)において、xが1、yが3の化学構造を有していた。つまり、得られた生成物の化学構造は、式:(ZrO2)(P2O5)(H2O)3に相当する。これはZr(HPO4)2・2H2Oと表記することもできる。この生成物は試験用セルに充填した後、トリメトキシシランを供給する前に、1時間、ヘリウム流通下、130℃で予備加熱した。この生成物をトリメトキシシラン不均化反応の触媒として用い、その触媒活性を比較例1と同様に評価した。結果を表1に示した。
下記の方法により実施例2~9の触媒を調製した。
実施例2の触媒:実施例1の触媒を塩化ナトリウム溶液で処理してイオン交換を行った後、洗浄及び乾燥を行った。
実施例3の触媒:実施例1の触媒を炭酸カリウムK2CO3溶液で滴定処理した後、洗浄及び乾燥を行った。
実施例4の触媒:酸化チタンTiO2とリン酸二水素カリウムKH2PO4の15質量%水溶液を酸化チタンTiO2:リン酸二水素カリウムKH2PO4=1:2のモル比で混合し、水分が無くなるまで徐々に加熱乾燥した。
実施例5の触媒:酸化チタンTiO2をリン酸H3PO4溶液と炭酸カリウムK2CO3溶液とで処理し、生成したK(TiO)PO4ゾルをアルミナ(γ-Al2O3)上にコーティングした。
実施例6の触媒:炭素粒子に担持されたリンタングステン酸、
実施例7の触媒:炭素粒子に担持されたリンモリブデン酸ナトリウム、
実施例8の触媒:リンタングステン酸アンモニウムパウダーとアルミナペレットとの混合物、
実施例9の触媒:ケイタングステン酸カリウムパウダーとアルミナペレットとの混合物。
上記触媒をトリメトキシシラン不均化反応の触媒として用い、その触媒活性を評価した。
トリメトキシシランの不均化反応と生成物の分析は、比較例1と同様の方法で実施した。すべての触媒は試験用セルに詰めた後、トリメトキシシランの供給前に、ヘリウム流通下、1時間、表1に記載の温度で予備加熱した。結果を表1に示す。
実施例1と2では、最初の1~1.5時間の間の反応生成物が、2~3%のメタノールと当量のジメチルシラノールの生成を示した。この期間を過ぎた後は、分析結果は、反応生成物としてモノシランとテトラメトキシシランのみであることを示した。
実施例3~8の実験については、GC分析はモノシラン及びテトラメトキシシラン以外の生成物を示さなかった。したがって、プロセスの選択率は、転化したトリメトキシシランに関しては100%であった。アルコールやヘキサメトキシジシロキサンの二量体のような他の反応生成物は反応混合物に見出すことはできなかった。
使用したすべての触媒は、出発物質及び反応生成物に不溶であった。
反応の間、触媒の質量減少は見られなかった。5時間の反応の間、触媒活性の低下も見られなかった。
表1に示した結果から、本発明の触媒の効率は高いことが分かる。
これらの反応は流通式の形態を用いることができ、それは連続的な工業的規模でモノシラン及びテトラアルコキシシランを製造するために容易に適用できる。なお、テトラアルコキシシランは液体として回収でき、モノシランは気体として回収できるので、両者の分離は容易である。
Claims (10)
- 一般式(1)
(式中、Rは炭素原子数1~6のアルキル基を表わし、nは1~3の整数である。)
で示されるアルコキシシランを触媒の存在下で、気相で不均化反応に付してモノシラン及びテトラアルコキシシランを製造する方法において、
下記一般式(I)~(V)で示される化合物群から選ばれる少なくとも1つの触媒を用いることを特徴とするモノシラン及びテトラアルコキシシランの製造方法:
(式中、MはZr、Ti、SnまたはSiを表わし、MIは水素原子、NH4、またはアルカリ金属を表わし、xは0.5~4.5、yは0.15~6.5、zは0.15~3.5である。)、
(式中、MはZr、Ti、SnまたはSiを表わし、xは0.5~4.5、yは0.15~6.5である。)、
(式中、MはZr、Ti、SnまたはSiを表わし、MIは水素原子、NH4、またはアルカリ金属を表わし、xは0.5~4.5、zは0.15~3.5である。)、
(式中、MIは水素原子、NH4、またはアルカリ金属を表わし、MIIはP(V)またはAs(V)を表わし、MIIIはW(VI)またはMo(VI)を表わし、nは1~3の整数、kは6、12、18または24、jは24、40または42、mは式:2j-5n-6kによって決定される整数である。)、
(式中、MIは水素原子、NH4、またはアルカリ金属を表わし、MIVはSi(IV)、Ge(IV)、Ti(IV)またはCe(IV)を表わし、MIIIはW(VI)またはMo(VI)を表わし、nは1~3の整数、kは6、12、18または24、jは24、40または42、mは式:2j-4n-6kによって決定される整数である。)。 - MがZrまたはTiである請求項2に記載のモノシラン及びテトラアルコキシシランの製造方法。
- yが1.3または3である請求項4に記載のモノシラン及びテトラアルコキシシランの製造方法。
- 触媒として、一般式(III)において、xが0.5、zが0.5である一般式(IIIa)
(式中、MはZrまたはTiを表わし、MIは請求項1の記載と同じ意味を表わす。)
で示される化合物を用いる請求項1に記載のモノシラン及びテトラアルコキシシランの製造方法。
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63210012A (ja) * | 1987-02-26 | 1988-08-31 | Chisso Corp | シランガスの製造法 |
| JPS63210011A (ja) * | 1987-02-26 | 1988-08-31 | Chisso Corp | シランの製造法 |
| JP2002069078A (ja) * | 2000-08-29 | 2002-03-08 | Jgc Corp | トリアルコキシシランからシランの製造方法およびテトラアルコキシシランからトリアルコキシシランの製造方法 |
| WO2010050579A1 (ja) * | 2008-10-31 | 2010-05-06 | 昭和電工株式会社 | モノシランおよびテトラアルコキシシランの製造方法 |
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|---|---|---|---|---|
| DD106388A5 (ja) * | 1972-05-30 | 1974-06-12 | ||
| US4016188A (en) | 1972-05-30 | 1977-04-05 | Dynamit Nobel Aktiengesellschaft | Process for the preparation of low silanes and silane esters |
| JP2535525B2 (ja) * | 1987-02-10 | 1996-09-18 | チッソ株式会社 | シランの製造方法 |
| US5608096A (en) * | 1995-12-28 | 1997-03-04 | Dow Corning Corporation | Method of forming siloxane polymers using a heteropoly catalyst having a keggin structure |
| JP2001019419A (ja) * | 1999-06-30 | 2001-01-23 | Mitsui Chemicals Inc | モノシラン及びテトラアルコキシシランの製造方法 |
| JP2001019418A (ja) * | 1999-06-30 | 2001-01-23 | Mitsui Chemicals Inc | モノシラン及びテトラアルコキシシランの製造方法 |
| EP2026904A1 (en) * | 2006-05-29 | 2009-02-25 | Sumitomo Chemical Company, Limited | Heteropolyacid salt catalyst, process for producing heteropolyacid salt catalyst and process for producing alkyl aromatic compound |
| WO2008042445A2 (en) * | 2006-10-03 | 2008-04-10 | Silicon Solar, Inc. | Systems and methods for production of semiconductor and photovoltaic grade silicon |
-
2010
- 2010-11-24 JP JP2011543259A patent/JP5647620B2/ja not_active Expired - Fee Related
- 2010-11-24 CN CN201080053035.1A patent/CN102666554B/zh not_active Expired - Fee Related
- 2010-11-24 KR KR1020127002519A patent/KR101381189B1/ko not_active Expired - Fee Related
- 2010-11-24 TW TW099140558A patent/TWI444330B/zh not_active IP Right Cessation
- 2010-11-24 US US13/509,118 patent/US9045503B2/en not_active Expired - Fee Related
- 2010-11-24 WO PCT/JP2010/070883 patent/WO2011065359A1/ja not_active Ceased
- 2010-11-24 KR KR1020137027255A patent/KR101344356B1/ko not_active Expired - Fee Related
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2015
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63210012A (ja) * | 1987-02-26 | 1988-08-31 | Chisso Corp | シランガスの製造法 |
| JPS63210011A (ja) * | 1987-02-26 | 1988-08-31 | Chisso Corp | シランの製造法 |
| JP2002069078A (ja) * | 2000-08-29 | 2002-03-08 | Jgc Corp | トリアルコキシシランからシランの製造方法およびテトラアルコキシシランからトリアルコキシシランの製造方法 |
| WO2010050579A1 (ja) * | 2008-10-31 | 2010-05-06 | 昭和電工株式会社 | モノシランおよびテトラアルコキシシランの製造方法 |
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|---|---|
| US20150232486A1 (en) | 2015-08-20 |
| TWI444330B (zh) | 2014-07-11 |
| US9233987B2 (en) | 2016-01-12 |
| JP5647620B2 (ja) | 2015-01-07 |
| KR20130123466A (ko) | 2013-11-12 |
| CN102666554B (zh) | 2014-11-05 |
| US20120226064A1 (en) | 2012-09-06 |
| KR20120032544A (ko) | 2012-04-05 |
| KR101381189B1 (ko) | 2014-04-04 |
| US9045503B2 (en) | 2015-06-02 |
| KR101344356B1 (ko) | 2014-01-22 |
| JPWO2011065359A1 (ja) | 2013-04-11 |
| CN102666554A (zh) | 2012-09-12 |
| TW201132588A (en) | 2011-10-01 |
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