WO2010050579A1 - モノシランおよびテトラアルコキシシランの製造方法 - Google Patents
モノシランおよびテトラアルコキシシランの製造方法 Download PDFInfo
- Publication number
- WO2010050579A1 WO2010050579A1 PCT/JP2009/068648 JP2009068648W WO2010050579A1 WO 2010050579 A1 WO2010050579 A1 WO 2010050579A1 JP 2009068648 W JP2009068648 W JP 2009068648W WO 2010050579 A1 WO2010050579 A1 WO 2010050579A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- catalyst
- fluoride
- formula
- represented
- catalyst activator
- Prior art date
Links
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title abstract description 13
- 239000003054 catalyst Substances 0.000 claims abstract description 94
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000012190 activator Substances 0.000 claims abstract description 51
- 229910001515 alkali metal fluoride Inorganic materials 0.000 claims abstract description 29
- 238000007323 disproportionation reaction Methods 0.000 claims abstract description 22
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 17
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 16
- NROKBHXJSPEDAR-UHFFFAOYSA-M potassium fluoride Chemical group [F-].[K+] NROKBHXJSPEDAR-UHFFFAOYSA-M 0.000 claims description 48
- 239000011698 potassium fluoride Substances 0.000 claims description 26
- 235000003270 potassium fluoride Nutrition 0.000 claims description 24
- YUYCVXFAYWRXLS-UHFFFAOYSA-N trimethoxysilane Chemical compound CO[SiH](OC)OC YUYCVXFAYWRXLS-UHFFFAOYSA-N 0.000 claims description 18
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical group [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 17
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 12
- NHGXDBSUJJNIRV-UHFFFAOYSA-M tetrabutylammonium chloride Chemical group [Cl-].CCCC[N+](CCCC)(CCCC)CCCC NHGXDBSUJJNIRV-UHFFFAOYSA-M 0.000 claims description 10
- -1 phosphonium halide Chemical class 0.000 claims description 8
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical group C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 claims description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 7
- 125000005207 tetraalkylammonium group Chemical group 0.000 claims description 7
- CKRNPRFOXFWMGH-UHFFFAOYSA-K calcium;potassium;trifluoride Chemical compound [F-].[F-].[F-].[K+].[Ca+2] CKRNPRFOXFWMGH-UHFFFAOYSA-K 0.000 claims description 6
- 125000004663 dialkyl amino group Chemical group 0.000 claims description 6
- 150000004820 halides Chemical class 0.000 claims description 6
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 claims description 6
- PJAIMBYNTXNOCN-UHFFFAOYSA-N 3,6-dibromo-1h-indole Chemical group BrC1=CC=C2C(Br)=CNC2=C1 PJAIMBYNTXNOCN-UHFFFAOYSA-N 0.000 claims description 5
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 claims description 5
- LYWKAJZTPLXHEM-UHFFFAOYSA-M bis(diethylamino)methylidene-diethylazanium;chloride Chemical group [Cl-].CCN(CC)C(N(CC)CC)=[N+](CC)CC LYWKAJZTPLXHEM-UHFFFAOYSA-M 0.000 claims description 3
- GQSNYNMMDQPIDR-UHFFFAOYSA-M tetrakis(diethylamino)phosphanium;bromide Chemical group [Br-].CCN(CC)[P+](N(CC)CC)(N(CC)CC)N(CC)CC GQSNYNMMDQPIDR-UHFFFAOYSA-M 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 29
- 239000002904 solvent Substances 0.000 abstract description 9
- 239000007791 liquid phase Substances 0.000 abstract description 2
- 238000000926 separation method Methods 0.000 abstract description 2
- 238000007796 conventional method Methods 0.000 abstract 1
- 239000007792 gaseous phase Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 10
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 9
- 239000007795 chemical reaction product Substances 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- 239000007858 starting material Substances 0.000 description 6
- 230000003197 catalytic effect Effects 0.000 description 5
- 239000012973 diazabicyclooctane Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 4
- XJHCXCQVJFPJIK-UHFFFAOYSA-M caesium fluoride Inorganic materials [F-].[Cs+] XJHCXCQVJFPJIK-UHFFFAOYSA-M 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 239000000047 product Substances 0.000 description 4
- 239000011541 reaction mixture Substances 0.000 description 4
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- LFQCEHFDDXELDD-UHFFFAOYSA-N tetramethyl orthosilicate Chemical compound CO[Si](OC)(OC)OC LFQCEHFDDXELDD-UHFFFAOYSA-N 0.000 description 4
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004817 gas chromatography Methods 0.000 description 3
- 238000009776 industrial production Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- ARYZCSRUUPFYMY-UHFFFAOYSA-N methoxysilane Chemical compound CO[SiH3] ARYZCSRUUPFYMY-UHFFFAOYSA-N 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- QQQSFSZALRVCSZ-UHFFFAOYSA-N triethoxysilane Chemical compound CCO[SiH](OCC)OCC QQQSFSZALRVCSZ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- KYQCOXFCLRTKLS-UHFFFAOYSA-N Pyrazine Chemical compound C1=CN=CC=N1 KYQCOXFCLRTKLS-UHFFFAOYSA-N 0.000 description 2
- 229910052783 alkali metal Inorganic materials 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- YQGOWXYZDLJBFL-UHFFFAOYSA-N dimethoxysilane Chemical compound CO[SiH2]OC YQGOWXYZDLJBFL-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052700 potassium Inorganic materials 0.000 description 2
- 239000011591 potassium Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 235000013024 sodium fluoride Nutrition 0.000 description 2
- 239000011775 sodium fluoride Substances 0.000 description 2
- SGUVLZREKBPKCE-UHFFFAOYSA-N 1,5-diazabicyclo[4.3.0]-non-5-ene Chemical compound C1CCN=C2CCCN21 SGUVLZREKBPKCE-UHFFFAOYSA-N 0.000 description 1
- VMCIKMLQXFLKAX-UHFFFAOYSA-N 1-methoxy-2-[2-[2-[2-[2-(2-methoxyethoxy)ethoxy]ethoxy]ethoxy]ethoxy]ethane Chemical compound COCCOCCOCCOCCOCCOCCOC VMCIKMLQXFLKAX-UHFFFAOYSA-N 0.000 description 1
- ASZZHBXPMOVHCU-UHFFFAOYSA-N 3,9-diazaspiro[5.5]undecane-2,4-dione Chemical compound C1C(=O)NC(=O)CC11CCNCC1 ASZZHBXPMOVHCU-UHFFFAOYSA-N 0.000 description 1
- GMEQIEASMOFEOC-UHFFFAOYSA-N 4-[3,5-bis[4-(4-methoxy-n-(4-methoxyphenyl)anilino)phenyl]phenyl]-n,n-bis(4-methoxyphenyl)aniline Chemical compound C1=CC(OC)=CC=C1N(C=1C=CC(=CC=1)C=1C=C(C=C(C=1)C=1C=CC(=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C=1C=CC(=CC=1)N(C=1C=CC(OC)=CC=1)C=1C=CC(OC)=CC=1)C1=CC=C(OC)C=C1 GMEQIEASMOFEOC-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- 229910004261 CaF 2 Inorganic materials 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- 229910010082 LiAlH Inorganic materials 0.000 description 1
- PCNDJXKNXGMECE-UHFFFAOYSA-N Phenazine Natural products C1=CC=CC2=NC3=CC=CC=C3N=C21 PCNDJXKNXGMECE-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000013543 active substance Substances 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 229910052910 alkali metal silicate Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- SWLVFNYSXGMGBS-UHFFFAOYSA-N ammonium bromide Chemical compound [NH4+].[Br-] SWLVFNYSXGMGBS-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004587 chromatography analysis Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 125000000753 cycloalkyl group Chemical group 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- ZXPDYFSTVHQQOI-UHFFFAOYSA-N diethoxysilane Chemical compound CCO[SiH2]OCC ZXPDYFSTVHQQOI-UHFFFAOYSA-N 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- CWAFVXWRGIEBPL-UHFFFAOYSA-N ethoxysilane Chemical compound CCO[SiH3] CWAFVXWRGIEBPL-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000002484 inorganic compounds Chemical class 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- YTHCQFKNFVSQBC-UHFFFAOYSA-N magnesium silicide Chemical compound [Mg]=[Si]=[Mg] YTHCQFKNFVSQBC-UHFFFAOYSA-N 0.000 description 1
- 229910021338 magnesium silicide Inorganic materials 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 239000005297 pyrex Substances 0.000 description 1
- 239000012429 reaction media Substances 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000012686 silicon precursor Substances 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000007962 solid dispersion Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- XOAJIYVOSJHEQB-UHFFFAOYSA-N trimethyl trimethoxysilyl silicate Chemical class CO[Si](OC)(OC)O[Si](OC)(OC)OC XOAJIYVOSJHEQB-UHFFFAOYSA-N 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/04—Esters of silicic acids
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/04—Hydrides of silicon
- C01B33/043—Monosilane
Definitions
- the present invention relates to a method for producing monosilane and tetraalkoxysilane by disproportionation reaction of alkoxysilane.
- Monosilane is useful as a high-purity volatile silicon material, and is widely used for manufacturing solar cells, semiconductors, amorphous silicon photosensitive materials, and various ceramic materials.
- the above disproportionation reaction of alkoxysilane usually uses trialkoxysilane as a starting material and has the following formula: Accordingly, monosilane and tetraalkoxysilane are produced.
- Tetraalkoxysilane as well as monosilane is a useful chemical as a pure silicon precursor material for the production of different silicon compounds for optical fiber, photomask and IC encapsulants.
- Triethoxysilane and trimethoxysilane are used as starting materials for the above disproportionation reaction, and tetraethoxysilane and tetramethoxysilane are produced together with monosilane, respectively, as shown in the following formula.
- metallic sodium can be used as a catalyst for the disproportionation reaction.
- the yield was low and therefore the method was not practically useful.
- Patent Document 1 describes a method using an alkali metal alkoxide or an alkali metal silicate as a catalyst.
- the reaction in the liquid phase is very slow and the reaction time is over 10 hours and is therefore not suitable for industrial production.
- Patent Document 2 discloses a general formula H n Si (OR) 4-n wherein n is 1, 2 or 3, and R represents an alkyl group or a cycloalkyl group.
- the alkoxysilane is disproportionated in a solvent in the presence of a catalyst to convert the monosilane and tetraalkoxysilane to (Ii) a step of extracting a part of the solvent containing the catalyst and tetraalkoxysilane from the reaction step, (iii) a part of the tetraalkoxysilane by distillation from the extracted catalyst and the solvent containing tetraalkoxysilane, or A method for producing monosilane and tetraalkoxysilane comprising the step of separating the total amount is disclosed.
- this method is also a disproportionation reaction in a solution and has a problem that it is difficult to separate from a solvent and a problem that the reaction rate is not sufficiently high.
- the present invention provides a method for producing monosilane and tetraalkoxysilane by the disproportionation reaction of alkoxysilane, and it is difficult to separate from the above solvent, and the reaction is very slow for industrial production.
- the object is to provide a method for solving the problem of being unsuitable.
- the catalyst activator is represented by the general formula (2) (In the formula, R 1 and R 2 each independently represent an alkyl group having 1 to 3 carbon atoms, and X represents Br, Cl or F.)
- the method according to [4], wherein the tetrakis (dialkylamino) phosphonium halide is tetrakis (diethylamino) phosphonium bromide.
- the catalyst activator is represented by the general formula (4) (In the formula, R 7 , R 8 , R 9 and R 10 each independently represents an alkyl group having 1 to 4 carbon atoms.)
- the catalyst activator is calcium fluoride.
- the alkali metal fluoride is potassium fluoride
- the catalyst activator is calcium fluoride, the potassium fluoride and the calcium fluoride form potassium calcium trifluoride, and the catalyst and the catalyst.
- the alkali metal fluoride is potassium fluoride
- the catalyst activator is calcium fluoride, the potassium fluoride and the calcium fluoride form potassium calcium trifluoride, and the catalyst and the catalyst.
- the catalyst activator is represented by the general formula (5) (In the formula, m is an integer of 2 to 8.) The method according to any one of [1] to [3] above, which is an oligoethylene glycol dimethyl ether represented by the formula: [15] The method according to [1], wherein n in the general formula (1) is 1. [16] The method according to [15], wherein the alkoxysilane in which n in the general formula (1) is 1 is trimethoxysilane.
- the method of the present invention is a method for producing monosilane and tetraalkoxysilane by disproportionation of alkoxysilane.
- a specific catalyst and a catalyst activator are used to react with each other in a gas phase, whereby separation from a solvent is achieved. The problem that it is difficult and the problem that the reaction rate is not sufficiently high can be solved.
- monosilane and tetrasilane are characterized in that an alkoxysilane represented by the following general formula (1) is subjected to a disproportionation reaction in a gas phase in the presence of a catalyst containing an alkali metal fluoride and a catalyst activator.
- This is a method for producing alkoxysilane. (Wherein R represents an alkyl group having 1 to 6 carbon atoms, and n is an integer of 1 to 3)
- R is an alkyl group having 1 to 6 carbon atoms, preferably an alkyl group having 1 to 2 carbon atoms.
- Particularly preferred alkoxysilanes include monomethoxysilane, dimethoxysilane, trimethoxysilane, monoethoxysilane, diethoxysilane and triethoxysilane. Of these, trimethoxysilane and triethoxysilane are most preferred.
- the disproportionation reaction for the method of the present invention requires a catalyst composition composed of at least two components, that is, a catalyst containing an alkali metal fluoride and a catalyst activator.
- the first component of the catalyst composition is an alkali metal fluoride and is selected from the group consisting of MeF.
- Me means an alkali metal.
- the alkali metal fluoride can include LiF, NaF, KF, or CsF. Of these, sodium fluoride, potassium fluoride and cesium fluoride are preferred.
- the catalyst activator that is the second component of the catalyst composition is selected from the group consisting of the following organic or inorganic compounds.
- tetrakis (dialkylamino) phosphonium halide represented by the following general formula (2) can be used as a catalyst activator.
- R 1 and R 2 each independently represent an alkyl group having 1 to 3 carbon atoms, and X represents Br, Cl or F.
- tetrakis (diethylamino) phosphonium bromide chemical formula: (Et 2 N) 4 PBr, hereinafter sometimes referred to as TDAPB
- TDAPB tetrakis (dialkylamino) phosphonium halide represented by the general formula (2) is preferably blended in the range of 0.1 to 20 parts by mass with respect to 100 parts by mass of the alkali metal fluoride.
- 1,4-diazabicyclo [2.2.2] octane (hereinafter sometimes referred to as DABCO) may be mentioned.
- DABCO 1,4-diazabicyclo [2.2.2] octane
- cyclic tertiary amines of aromatic and aliphatic structures related to DABCO for example, N, N′-dialkylpiperazine, N, N′-dialkyl-2,5-diazabicyclo [2. 2.1] heptane, 1,5-diazabicyclo [4.3.0] non-5-ene, pyrazine are also effective organic catalyst activators.
- a commercially available potassium hydrogen fluoride (KF ⁇ HF) impregnated with a DABCO solution, then dried and heat-treated can be used.
- DABCO is preferably blended in the range of 0.01 to 20 parts by mass with respect to 100 parts by mass of the alkali metal fluoride.
- hexaalkylguanidinium halide represented by the following general formula (3) can be given.
- R 3 , R 4 , R 5 and R 6 each independently represent an alkyl group having 1 to 3 carbon atoms, and X represents Br, Cl or F.
- hexaethylguanidinium chloride represented by [(Et 2 N) 2 CNEt 2 ] Cl (hereinafter sometimes referred to as HEGC) can be preferably used.
- the hexaalkylguanidinium halide represented by the general formula (3) is preferably blended in the range of 0.5 to 30 parts by mass with respect to 100 parts by mass of the alkali metal fluoride.
- Examples of the fourth catalyst activator include tetraalkylammonium chloride represented by the following general formula (4).
- R 7 , R 8 , R 9 and R 10 each independently represents an alkyl group having 1 to 4 carbon atoms.
- TBAC tetrabutylammonium chloride
- the alkali metal fluoride is potassium fluoride dihydrate
- a TBAC additive to the potassium fluoride dihydrate is preferred.
- This type of catalyst composition can be prepared by stirring commercial TBAC with potassium fluoride dihydrate and drying in acetonitrile solution.
- the tetraalkylammonium chloride represented by the general formula (4) is preferably blended in the range of 0.6 to 40 parts by mass with respect to 100 parts by mass of the alkali metal fluoride.
- Calcium fluoride can be mentioned as the fifth catalyst activator.
- potassium fluoride and calcium fluoride are potassium calcium trifluoride (chemical formula is KCaF 3 ). It is preferable to use the one formed by integrating the catalyst and the catalyst activator. Potassium calcium trifluoride can be obtained by activating vigorously mechanically grinding potassium fluoride and calcium fluoride. Alternatively, it can be prepared by forming KCaF 3 on the surface by supporting potassium fluoride on the surface of calcium fluoride (chemical formula: CaF 2 ) particles and annealing them. Calcium fluoride is preferably blended in the range of 30 to 150 parts by mass with respect to 100 parts by mass of the alkali metal fluoride.
- Examples of the sixth catalyst activator include oligoethylene glycol dimethyl ether represented by the following general formula (5) (hereinafter sometimes abbreviated as glyme).
- glyme oligoethylene glycol dimethyl ether
- the oligoethylene glycol dimethyl ether represented by the general formula (5) is preferably blended in the range of 40 to 1000 parts by mass with respect to 100 parts by mass of the alkali metal fluoride.
- the catalyst composition in the process of the present invention is used almost as a solid.
- a catalyst composition comprising an alkali metal fluoride and the organic catalyst activator described above can be prepared by a number of suitable methods.
- the general procedure for preparing the catalyst composition is to mix the dispersed alkali metal fluoride with the added catalyst activator and continue processing as needed.
- the catalyst activator is supported by impregnating a polar organic solvent solution of the catalyst activator on the surface of the solid dispersion of alkali metal fluoride.
- Another method of preparing the catalyst composition is based on treating particulate alkali metal fluoride with a catalyst activator and then heat treating.
- a catalyst activator when a commercially available calcium difluoride tablet is used as a catalyst activator, it can be used as a carrier for supporting an alkali metal fluoride.
- the catalyst composition thus obtained is effective when used in an amount of at least 0.02 parts by mass with respect to 100 parts by mass of the starting alkoxysilane. These are usually used in the range of 0.02 to 50 parts by mass, preferably 0.1 to 20 parts by mass.
- the disproportionation reaction can be carried out both batchwise and continuously flowing.
- the alkoxysilane and catalyst composition represented by the general formula (1) used as a starting material are not chemically reactive, and therefore the process can be carried out without any special restrictions with respect to equipment materials. . Therefore, it can be said that the catalyst system is suitable for an industrial production process because various different types of reactors can be used.
- the reaction temperature of the disproportionation reaction is preferably performed under heating.
- the preferred temperature depends on the starting alkoxysilane used, but is in the range of 100-200 ° C.
- the reaction pressure of the disproportionation reaction can be carried out in the range of 0.2 to 10 atm and does not remarkably depend on the pressure. Therefore, the process is preferably carried out under atmospheric pressure.
- the reaction product monosilane is known to ignite as soon as it is exposed to air. Therefore, in order to prevent the reaction medium containing monosilane from being ignited by contact with air oxygen, the reaction is preferably performed in an inert gas atmosphere such as nitrogen or argon.
- the monosilane produced by the reaction has a boiling point of -111.9 ° C. and is collected in a gaseous form after being taken out from the reactor. Tetraalkoxysilane remains in the reactor in the batch mode.
- the tetraalkoxysilane and unreacted trialkoxysilane pass through the reactor, the tetraalkoxysilane is condensed, and the trialkoxysilane is returned to the catalytic reactor.
- the catalyst used in the present invention is insoluble in both starting materials and reaction products and can be used during long periods of operation.
- Comparative Example 1 For active potassium fluoride, potassium fluoride and dry methanol solution (1: 13-20 parts by mass) are recrystallized by slowly evaporating the solvent under reduced pressure, and then dried while raising the temperature. It was prepared by. It is preferred that the methanol used for purification not only be American Pharmacopoeia Test Compliant (A.C.S.) with a purity greater than 99.9%, but also utilize a dry nitrogen atmosphere. In the step of evaporating methanol, a temperature of 25 to 35 ° C. is good. Subsequent vacuum drying should be performed in the range of 75-120 ° C. for at least 5-6 hours.
- the potassium fluoride-carrying alumina is prepared as follows.
- the conversion rate of trimethoxysilane was 63%
- the yield of monosilane with respect to the supplied trimethoxysilane was 63% (the yield of monosilane with respect to the converted trimethoxysilane was 100%)
- the tetrasilane with respect to the supplied trimethoxysilane was 63%
- the yield of methoxysilane was 63% (the yield of tetramethoxysilane with respect to the converted trimethoxysilane was 100%). No by-products were detected by GC.
- Examples 1-6 The activity of the catalyst composition based on potassium fluoride using various catalyst activators shown in Table 1 was tested, and the results are shown in Table 1.
- the disproportionation reaction of trimethoxysilane and the analysis of the product were carried out in the same manner as in the comparative example.
- Table 1 also shows the characteristics of the catalyst preparation method. Potassium fluoride was prepared in the same manner as in the comparative example. In all examples listed in Table 1, gas chromatographic analysis did not detect products other than monosilane and tetramethoxysilane, and other reaction products such as alcohol and hexamethoxydisiloxane dimers were not detected. It could not be found in the reaction mixture. The process selectivity was therefore 100% for the converted trimethoxysilane.
- Comparative Example 2 A comparative experiment was conducted on the catalytic activity of the catalyst activator alone without using an alkali metal fluoride. These comparative experiments were performed under the conditions described in Comparative Example 1. The catalyst activator was applied to the alumina support in the same manner as in Comparative Example 1. As a result, the catalytic activity of the catalyst activator itself was low, and the conversion rate of trimethoxysilane was less than 14%. Only the alumina-supported TBAC had a trimethoxysilane conversion of 26% and a selectivity of 66%. Therefore, it was found that the catalytic activity of the catalyst activator itself is low.
- Examples 7-12 The catalytic activity of other catalyst compositions was tested and the results are shown in Table 1.
- the disproportionation reaction and product of trimethoxysilane were carried out in the same manner as in the comparative example.
- the catalyst composition was prepared in the same manner when the catalyst activator was the same as the catalyst activator used in Examples 1-6.
- An alkali metal fluoride such as potassium fluoride was prepared in the same manner as in Comparative Example 1.
- the selectivity was calculated by mol% of the ratio of tetraalkoxysilane to the total amount of mono, di, tri and tetraalkoxysilane. Other impurities such as alcohol or siloxane dimer were not detected in the reaction product.
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Catalysts (AREA)
- Low-Molecular Organic Synthesis Reactions Using Catalysts (AREA)
- Silicon Compounds (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
Abstract
Description
で示されるアルコキシシランを、アルカリ金属フッ化物を含む触媒および触媒活性化剤の存在下で、気相で不均化反応させることにより上記課題を解決できることを見出した。
[1]一般式(1)
で示されるアルコキシシランを、アルカリ金属フッ化物を含む触媒および触媒活性化剤の存在下で、気相で不均化反応に付することを特徴とするモノシランおよびテトラアルコキシシランの製造方法。
[2]前記アルカリ金属フッ化物がフッ化カリウムである前記[1]に記載の方法。
[3]前記フッ化カリウムがフッ化カリウム二水和物である前記[2]に記載の方法。
[4]前記触媒活性化剤が、一般式(2)
で示されるテトラキス(ジアルキルアミノ)ホスホニウムハライドである前記[1]~[3]のいずれかに記載の方法。
[5]前記テトラキス(ジアルキルアミノ)ホスホニウムハライドが、テトラキス(ジエチルアミノ)ホスホニウムブロマイドである前記[4]に記載の方法。
[6]前記触媒活性化剤が、1,4-ジアザビシクロ[2.2.2]オクタンである前記[1]~[3]のいずれかに記載の方法。
[7]前記触媒活性化剤が、一般式(3)
で示されるヘキサアルキルグアニジニウムハライドである前記[1]~[3]のいずれかに記載の方法。
[8]前記ヘキサアルキルグアニジニウムハライドが、ヘキサエチルグアニジニウムクロライドである前記[7]に記載の方法。
[9]前記触媒活性化剤が、一般式(4)
で示されるテトラアルキルアンモニウムクロライドである前記[1]~[3]のいずれかに記載の方法。
[10]前記テトラアルキルアンモニウムクロライドが、テトラブチルアンモニウムクロライドである前記[9]に記載の方法。
[11]前記触媒活性化剤がフッ化カルシウムである前記[1]~[3]のいずれかに記載の方法。
[12]前記アルカリ金属フッ化物がフッ化カリウムであり、前記触媒活性化剤がフッ化カルシウムであり、前記フッ化カリウムと前記フッ化カルシウムとがカリウムカルシウム三フッ化物を形成し、触媒と触媒活性剤が一体となったものを使用する前記[2]に記載の方法。
[13]前記アルカリ金属フッ化物がフッ化カリウムであり、前記触媒活性化剤がフッ化カルシウムであり、前記フッ化カリウムと前記フッ化カルシウムとがカリウムカルシウム三フッ化物を形成し、触媒と触媒活性剤が一体となったものを使用する前記[11]に記載の方法。
[14]前記触媒活性化剤が、一般式(5)
で示されるオリゴエチレングリコールジメチルエーテルである前記[1]~[3]のいずれかに記載の方法。
[15]前記一般式(1)のnが1である前記[1]に記載の方法。
[16]前記一般式(1)のnが1であるアルコキシシランが、トリメトキシシランである前記[15]に記載の方法。
触媒組成物の第2成分である触媒活性化剤は、以下の有機または無機の化合物からなる群から選ばれる。
特に、テトラキス(ジエチルアミノ)ホスホニウムブロマイド(化学式:(Et2N)4PBr。以下、TDAPBと表記する場合がある。)を、触媒活性化剤として好ましく使用することができる。一般式(2)で示されるテトラキス(ジアルキルアミノ)ホスホニウムハライドは、アルカリ金属フッ化物100質量部に対して、0.1~20質量部の範囲で配合することが好ましい。
具体的には、[(Et2N)2CNEt2]Clで示されるヘキサエチルグアニジニウムクロライド(以下、HEGCと表記する場合がある。)が好ましく使用することができる。一般式(3)で示されるヘキサアルキルグアニジニウムハライドは、アルカリ金属フッ化物100質量部に対して、0.5~30質量部の範囲で配合することが好ましい。
特に、前記テトラアルキルアンモニウムクロライドとして、テトラブチルアンモニウムクロライド(以下、TBACと表記する場合がある。)が好ましい。特に、アルカリ金属フッ化物がフッ化カリウム二水和物である場合、このフッ化カリウム二水和物へのTBAC添加物は好ましい。このタイプの触媒組成物は、アセトニトリル溶液中、市販のTBACをフッ化カリウム二水和物と撹拌し、乾燥することによって調製することができる。一般式(4)で示されるテトラアルキルアンモニウムクロライドは、アルカリ金属フッ化物100質量部に対して、0.6~40質量部の範囲で配合することが好ましい。
この触媒活性化剤を使用した場合の触媒組成物としては、例えば60℃に加熱下、フッ化カリウム粒子にヘキサグライム、つまり一般式(5)においてm=6の化合物を直接含浸することによって得ることができる。一般式(5)で示されるオリゴエチレングリコールジメチルエーテルは、アルカリ金属フッ化物100質量部に対して、40~1000質量部の範囲で配合することが好ましい。
アルカリ金属フッ化物と上記の有機触媒活性化剤を含む触媒組成物は、いくつかの適切な方法によって調製することができる。
したがって、種々の異なるタイプの反応器を使用することができるので工業的な製造プロセスにふさわしい触媒システムと言える。
活性型のフッ化カリウムは、フッ化カリウムと乾燥メタノール溶液(1:13~20質量部)を減圧下、溶媒をゆっくり蒸発させることによってフッ化カリウムの再結晶を行い、次いで昇温させながら乾燥することによって調製した。
精製に使用されるメタノールは、純度が99.9%超のアメリカ薬局方試験適合(A.C.S.)であることだけでなく、乾燥窒素雰囲気を利用することが好ましい。メタノールを蒸発させる段階では、25~35℃の温度がよい。
続く真空での乾燥は、少なくとも5~6時間の間、75~120℃の範囲で行うべきである。
フッ化カリウム担持アルミナは、以下のように調製される。粒径0.3~1.0mmの中性アルミナ30gとフッ化カリウム20gを200mlの脱イオン水と混合する。弱く脱気しながら、溶媒を50~60℃で蒸発させる。残った生成物を3時間、脱気しながら乾燥する。
モノシランおよびテトラアルコキシシランを調製するプロセスは次のように実施した。
電気炉を備えたPyrex(登録商標)ガラス製反応チューブに1.0gのフッ化カリウム担持アルミナを充填し、120℃に加熱した。蒸発されたトリメトキシシラン(流速3.5ml/min)およびヘリウム(流速35ml/min)の混合物を予熱器中で120℃に加熱し、次いで反応チューブに供給し、120℃で不均化反応を実施した。反応チューブから出てきたガス状の反応混合物は、20分ごとにガスクロマトグラフィー(GC)によって分析した。
反応開始10分後、未反応のトリメトキシシラン、モノシランおよびテトラメトキシシランの割合は、反応生成物中で実質的に一定であった。ジメトキシシランおよびモノメトキシシランは、最初の1時間経過後の反応中で不検出であった。
5時間の流通反応を行った後の分析は次の結果を示した。
すなわち、トリメトキシシランの転化率は63%、供給されたトリメトキシシランに対するモノシランの収率は63%(転化したトリメトキシシランに対するモノシランの収率は100%)、供給されたトリメトキシシランに対するテトラメトキシシランの収率は63%(転化したトリメトキシシランに対するテトラメトキシシランの収率は100%)であった。いかなる副生物もGCで検出されなかった。
表1に示す各種の触媒活性化剤を使用したフッ化カリウムをベースとする触媒組成物の活性について試験を行い、その結果を表1に示した。トリメトキシシランの不均化反応と生成物の分析は、比較例と同様の方法で実施した。触媒の調製方法に関する特徴点についても表1に示した。フッ化カリウムは比較例と同様に調製した。
表1に記載したすべての実施例において、ガスクロマトグラフィー分析では、モノシランおよびテトラメトキシシラン以外の生成物は検出されず、アルコールやヘキサメトキシジシロキサンの二量体のような他の反応生成物は反応混合物に見出すことはできなかった。
したがって、プロセスの選択率は、転化したトリメトキシシランに関しては100%であった。
使用されたすべての触媒は、出発物質および反応生成物に不溶であった。反応の間、触媒の質量減少も見られなかった。5時間の反応の間、触媒活性の低下も見られなかった。
表1に示した結果から、本発明の触媒の効率は高いことが分かる。これらの結果は流通式の反応で得られ、それは連続的な工業的規模でモノシランおよびテトラアルコキシシランを製造するために容易に適用できる。
アルカリ金属フッ化物を使用せずに、触媒活性化剤単独の触媒活性について比較実験を行った。これらの比較実験は、比較例1に記載した条件で行った。触媒活性化剤は比較例1と同様の方法でアルミナ担体に塗布した。
その結果、触媒活性剤自体の触媒活性は低く、トリメトキシシランの転化率は14%未満であった。アルミナ担持TBACだけはトリメトキシシランの転化率が26%、選択率が66%であった。したがって、触媒活性化剤自体の触媒活性は低いことが判明した。
その他の触媒組成物の触媒活性について試験し、その結果を表1に示した。トリメトキシシランの不均化反応および生成物については比較例と同様に行った。触媒組成物は、触媒活性化剤が実施例1~6で使用した触媒活性化剤と同種の場合は、それと同様の方法で調製した。フッ化カリウム等のアルカリ金属フッ化物は比較例1と同様の方法で調製した。
選択率は、モノ、ジ、トリおよびテトラアルコキシシランの合計量に対するテトラアルコキシシランの割合をモル%で計算した。アルコールあるいはシロキサン二量体のような他の不純物は、反応生成物中に検出されなかった。
表1から試験した触媒組成物の効率は高いことが分かる。
尚、ガス状の反応混合物と反応器中の触媒との接触時間を長くすると転化率は向上する傾向がある。例えば実施例3において、ヘリウムガスの流速を35ml/minから70ml/min、150ml/minにそれぞれ変化させた場合、トリメトキシシランの転化率は89%から、52%、33%と変化した。つまり、触媒と反応混合物との接触時間が短くなれば転化率は低下する。
Claims (16)
- 前記アルカリ金属フッ化物がフッ化カリウムである請求項1に記載の方法。
- 前記フッ化カリウムがフッ化カリウム二水和物である請求項2に記載の方法。
- 前記テトラキス(ジアルキルアミノ)ホスホニウムハライドが、テトラキス(ジエチルアミノ)ホスホニウムブロマイドである請求項4に記載の方法。
- 前記触媒活性化剤が、1,4-ジアザビシクロ[2.2.2]オクタンである請求項1~3のいずれかに記載の方法。
- 前記ヘキサアルキルグアニジニウムハライドが、ヘキサエチルグアニジニウムクロライドである請求項7に記載の方法。
- 前記テトラアルキルアンモニウムクロライドが、テトラブチルアンモニウムクロライドである請求項9に記載の方法。
- 前記触媒活性化剤がフッ化カルシウムである請求項1~3のいずれかに記載の方法。
- 前記アルカリ金属フッ化物がフッ化カリウムであり、前記触媒活性化剤がフッ化カルシウムであり、前記フッ化カリウムと前記フッ化カルシウムとがカリウムカルシウム三フッ化物を形成し、触媒と触媒活性剤が一体となったものを使用する請求項2に記載の方法。
- 前記アルカリ金属フッ化物がフッ化カリウムであり、前記触媒活性化剤がフッ化カルシウムであり、前記フッ化カリウムと前記フッ化カルシウムとがカリウムカルシウム三フッ化物を形成し、触媒と触媒活性剤が一体となったものを使用する請求項11に記載の方法。
- 前記一般式(1)のnが1である請求項1に記載の方法。
- 前記一般式(1)のnが1であるアルコキシシランが、トリメトキシシランである請求項15に記載の方法。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/125,606 US8829221B2 (en) | 2008-10-31 | 2009-10-30 | Method for producing monosilane and tetraalkoxysilane |
JP2010535844A JP5563471B2 (ja) | 2008-10-31 | 2009-10-30 | モノシランおよびテトラアルコキシシランの製造方法 |
CN200980143306.XA CN102203104B (zh) | 2008-10-31 | 2009-10-30 | 甲硅烷和四烷氧基硅烷的制造方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008281206 | 2008-10-31 | ||
JP2008-281206 | 2008-10-31 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010050579A1 true WO2010050579A1 (ja) | 2010-05-06 |
Family
ID=42128938
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/068648 WO2010050579A1 (ja) | 2008-10-31 | 2009-10-30 | モノシランおよびテトラアルコキシシランの製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8829221B2 (ja) |
JP (1) | JP5563471B2 (ja) |
KR (1) | KR101212541B1 (ja) |
CN (1) | CN102203104B (ja) |
TW (1) | TWI480228B (ja) |
WO (1) | WO2010050579A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011065359A1 (ja) * | 2009-11-25 | 2011-06-03 | 昭和電工株式会社 | モノシラン及びテトラアルコキシシランの製造方法 |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102633262B (zh) * | 2012-04-01 | 2014-03-26 | 多氟多化工股份有限公司 | 一种甲硅烷的制备方法 |
WO2014054843A1 (en) | 2012-10-02 | 2014-04-10 | Oci Company Ltd. | Method for preparing monosilane by using trialkoxysilane |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61270207A (ja) * | 1985-05-22 | 1986-11-29 | Mitsubishi Chem Ind Ltd | モノシランの製造法 |
JPH01264922A (ja) * | 1988-04-13 | 1989-10-23 | Mitsubishi Kasei Corp | モノシランの製造法 |
JPH02169592A (ja) * | 1988-12-22 | 1990-06-29 | Mitsubishi Kasei Corp | アルコキシシランの不均化法 |
JP2001019418A (ja) * | 1999-06-30 | 2001-01-23 | Mitsui Chemicals Inc | モノシラン及びテトラアルコキシシランの製造方法 |
JP2002069078A (ja) * | 2000-08-29 | 2002-03-08 | Jgc Corp | トリアルコキシシランからシランの製造方法およびテトラアルコキシシランからトリアルコキシシランの製造方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4016188A (en) | 1972-05-30 | 1977-04-05 | Dynamit Nobel Aktiengesellschaft | Process for the preparation of low silanes and silane esters |
DE68907631T2 (de) * | 1988-04-13 | 1994-02-24 | Mitsubishi Chem Ind | Verfahren zum Herstellen von Monosilan. |
US5110991A (en) * | 1991-04-01 | 1992-05-05 | Texaco Chemical Company | Heterogeneous catalyst for alkoxylation of alcohols |
DE10051316A1 (de) * | 2000-10-17 | 2002-04-25 | Omg Ag & Co Kg | Verfahren zur Herstellung von mono-, bi- oder polyfunktionellen Biarylen |
DE102004045245B4 (de) * | 2004-09-17 | 2007-11-15 | Degussa Gmbh | Vorrichtung und Verfahren zur Herstellung von Silanen |
-
2009
- 2009-10-30 CN CN200980143306.XA patent/CN102203104B/zh not_active Expired - Fee Related
- 2009-10-30 JP JP2010535844A patent/JP5563471B2/ja not_active Expired - Fee Related
- 2009-10-30 KR KR1020107027833A patent/KR101212541B1/ko not_active IP Right Cessation
- 2009-10-30 US US13/125,606 patent/US8829221B2/en not_active Expired - Fee Related
- 2009-10-30 WO PCT/JP2009/068648 patent/WO2010050579A1/ja active Application Filing
- 2009-10-30 TW TW098136977A patent/TWI480228B/zh not_active IP Right Cessation
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61270207A (ja) * | 1985-05-22 | 1986-11-29 | Mitsubishi Chem Ind Ltd | モノシランの製造法 |
JPH01264922A (ja) * | 1988-04-13 | 1989-10-23 | Mitsubishi Kasei Corp | モノシランの製造法 |
JPH02169592A (ja) * | 1988-12-22 | 1990-06-29 | Mitsubishi Kasei Corp | アルコキシシランの不均化法 |
JP2001019418A (ja) * | 1999-06-30 | 2001-01-23 | Mitsui Chemicals Inc | モノシラン及びテトラアルコキシシランの製造方法 |
JP2002069078A (ja) * | 2000-08-29 | 2002-03-08 | Jgc Corp | トリアルコキシシランからシランの製造方法およびテトラアルコキシシランからトリアルコキシシランの製造方法 |
Non-Patent Citations (1)
Title |
---|
E. SUZUKI ET AL.: "Disproportionation of triethoxysilane over KF/A1203 and heat-treated hydrotalcite", APPLIED CATALYSIS, A: GENERAL, vol. 167, no. 1, 1998, pages 7 - 10 * |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011065359A1 (ja) * | 2009-11-25 | 2011-06-03 | 昭和電工株式会社 | モノシラン及びテトラアルコキシシランの製造方法 |
JP5647620B2 (ja) * | 2009-11-25 | 2015-01-07 | 昭和電工株式会社 | モノシラン及びテトラアルコキシシランの製造方法 |
US9045503B2 (en) | 2009-11-25 | 2015-06-02 | Showa Denko K.K. | Method for producing monosilane and tetraalkoxysilane |
US9233987B2 (en) | 2009-11-25 | 2016-01-12 | Showa Denko K.K. | Method for producing monosilane and tetraalkoxysilane |
Also Published As
Publication number | Publication date |
---|---|
KR101212541B1 (ko) | 2012-12-14 |
CN102203104A (zh) | 2011-09-28 |
KR20110005910A (ko) | 2011-01-19 |
JPWO2010050579A1 (ja) | 2012-03-29 |
TW201034952A (en) | 2010-10-01 |
JP5563471B2 (ja) | 2014-07-30 |
US8829221B2 (en) | 2014-09-09 |
TWI480228B (zh) | 2015-04-11 |
CN102203104B (zh) | 2014-12-31 |
US20110200513A1 (en) | 2011-08-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5122700B1 (ja) | モノシランの精製方法 | |
EP2546197B1 (en) | Method for producing trichlorosilane | |
US9908781B2 (en) | Process and use of amino-functional resins for dismutating halosilanes and for removing extraneous metals | |
JP5563471B2 (ja) | モノシランおよびテトラアルコキシシランの製造方法 | |
JP5836489B2 (ja) | トリアルコキシシランの製造方法 | |
EP2905258B1 (en) | Method for preparing monosilane using trialkoxysilane | |
US6103942A (en) | Method of high purity silane preparation | |
KR101344356B1 (ko) | 모노실란 및 테트라알콕시실란의 제조방법 | |
JP4663079B2 (ja) | トリアルコキシシランからシランの製造方法およびテトラアルコキシシランからトリアルコキシシランの製造方法 | |
JP2015113250A (ja) | テトラクロロシランの精製方法 | |
JP3986376B2 (ja) | 四フッ化珪素の製造法 | |
Kim et al. | Kim et al.(45) Date of Patent: Mar. 8, 2016 | |
WO2013125262A1 (ja) | トリメチルシランの精製方法 | |
JPH0710520A (ja) | 部分置換フルオロシランの製造方法 | |
JP2002069077A (ja) | トリアルコキシシランの製造方法 | |
JPH10287682A (ja) | ハロゲン含有量が極めて少量であるアルコキシシランおよびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980143306.X Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09823689 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010535844 Country of ref document: JP |
|
ENP | Entry into the national phase |
Ref document number: 20107027833 Country of ref document: KR Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13125606 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09823689 Country of ref document: EP Kind code of ref document: A1 |