WO2011025283A2 - ZnO계 바리스터 조성물 - Google Patents
ZnO계 바리스터 조성물 Download PDFInfo
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- WO2011025283A2 WO2011025283A2 PCT/KR2010/005747 KR2010005747W WO2011025283A2 WO 2011025283 A2 WO2011025283 A2 WO 2011025283A2 KR 2010005747 W KR2010005747 W KR 2010005747W WO 2011025283 A2 WO2011025283 A2 WO 2011025283A2
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Definitions
- the present invention relates to a varistor composition, and more particularly, to a ZnO-based varistor composition comprising zinc oxide (ZnO) as a main component.
- ZnO zinc oxide
- ZnO-based varistors formed of ZnO-Bi-based or ZnO-Pr-based materials of the varistors have better voltage nonlinearity and better surge current resistance than SiC-based varistors and SrTiO 3- based varistors. Due to its excellent ability to protect electronic devices from current, it is widely used as a material for surge protection devices.
- the ZnO-Bi varistor is composed of Bi 2 O 3 , Sb 2 O 3 , Mn, Co, Ni, Cr, glass frit, Al, K and the like.
- the Bi 2 O 3 component is weak in electro-static discharge (ESD) resistance
- ZnO-Bi-based varistors containing the same have disadvantages of poor ESD characteristics.
- the Sb 2 O 3 component is classified as a carcinogen and its concentration is regulated
- ZnO-Bi-based varistors containing the same have disadvantages of not being free to manufacture.
- ZnO-Pr-based varistors have a good voltage nonlinearity, but have a drawback of greater leakage current than ZnO-Bi-based varistors.
- manufacturing costs are high.
- ZnO-type varistors have high dielectric constants of up to several hundreds, in order to have a small capacitance, the electrode area must be considerably reduced. However, reducing the electrode area to have a small capacitance results in a reduction in surge resistance, which also makes the varistor manufacturing process quite difficult. Accordingly, there is a need for a ZnO type varistor composition having a low dielectric constant.
- the present invention is to solve the above problems of the prior art, Bi 2 O 3 which negatively affects the electrostatic discharge (ESD) characteristics of the varistor, Sb 2 O 3 as an environmental regulatory component and high temperature sintering are required It is composed of new components that replace the Pr-based components, which cause an increase in manufacturing cost, and have excellent overall physical properties such as nonlinearity required for varistors. In particular, it has a small capacitance and ensures a low clamping voltage. It is an object to provide a varistor composition which is possible.
- the present invention provides a ZnO-based varistor composition which does not include Bi 2 O 3 , Sb 2 O 3, and Pr 6 O 11, and includes Ca, Co, Cr, and La, and optionally includes Mg. .
- the ZnO-based varistor composition based on the total metal atoms contained in the composition, Zn 35 ⁇ 98 at%, Ca 0.2 ⁇ 30 at%, Mg 0 ⁇ 30 at%, Co 0.2 ⁇ 5 at%, Cr 0.05 ⁇ 3 at % And La 0.05-3 at%.
- the varistor composition of the present invention has excellent physical properties required for varistors such as nonlinear coefficient, clamping voltage ratio, and surge absorption capacity, and in particular, provides excellent ESD characteristics because it does not contain Bi 2 O 3 .
- the environmental regulation component Sb 2 O 3 provides excellent work safety, and does not contain a Pr-based component that requires a high temperature sintering to increase the manufacturing cost can reduce the manufacturing cost of the varistor.
- the varistor composition of the present invention can have a low capacitance while having a small capacitance, it is possible to manufacture a varistor that does not cause a signal delay even in an electronic product having a signal speed of several hundred MHz to several GHz.
- Figure 1 shows a graph evaluating the characteristics of the ZnO-based varistors prepared in Examples 1 to 4 of the present invention.
- FIG. 2 is an SEM image of ZnO-based varistors prepared in Examples 1 and 2.
- FIG. 2 is an SEM image of ZnO-based varistors prepared in Examples 1 and 2.
- Figure 3 shows a graph evaluating the characteristics of the ZnO-based varistors prepared in Examples 10 to 14 of the present invention.
- Figure 4 shows a graph evaluating the characteristics of the ZnO-based varistors prepared in Examples 15 to 19 of the present invention.
- Figure 5 shows a graph evaluating the characteristics of the ZnO-based varistors prepared in Examples 20 to 24 of the present invention.
- Figure 6 shows a graph evaluating the characteristics of the ZnO-based varistors prepared in Examples 25 to 29 of the present invention.
- FIG. 7 shows I-V curves of ZnO-based varistors prepared in Examples 35, 37-39, and 41 of the present invention.
- the present invention relates to a ZnO-based varistor composition, which does not include Bi 2 O 3 , Sb 2 O 3, and Pr 6 O 11, and contains Ca, Co, Cr, and La, and optionally includes Mg. .
- the ZnO-based varistor composition based on the total metal atoms contained in the composition, Zn 35 ⁇ 98 at%, Ca 0.2 ⁇ 30 at%, Mg 0 ⁇ 30 at%, Co 0.2 ⁇ 5 at%, Cr 0.05 ⁇ 3 at % And La 0.05-3 at%.
- Mg among the components of the ZnO-based varistor composition is optionally included. Therefore, "0" in the composition ratio of Mg means that Mg is not included.
- the overall physical properties required for the varistor composition may be excellent, and a composition exhibiting excellent nonlinearity may be obtained. It is also possible to obtain a composition having a small capacitance and a low clamping voltage.
- CaCO an added form of Ca 3 And / or CaCO 3 Is trapped in the mouth or distributed mostly at the grain boundaries without producing ZnO and reactants.
- the nonlinearity is greatly improved because the interface state density induced by CoOx, CrOx and LaOx, which are components that improve nonlinearity, is effectively formed at the grain boundaries.
- the overall physical properties required for the varistor composition are excellent, and in particular, a composition having a small capacitance and a low clamping voltage can be obtained.
- MgO and / or MgCO 3 an added form of Mg, has a dielectric constant of 9.8 and 8.1, which forms a solid solution with ZnO, effectively lowering the dielectric constant depending on the amount of addition, and not decreasing nonlinearity.
- Co When Co is included in the ZnO-based varistor composition at 0.2-5 at%, a composition having excellent nonlinearity is obtained. If Co is included in less than 0.2 at%, the effect of Co addition is not obtained, and if it exceeds 5 at%, an increase in leakage current, a decrease in nonlinearity, and an increase in resistivity of ZnO itself may result in poor varistor characteristics.
- La is included in the ZnO-based varistor composition at 0.05 to 3 at%, an excellent composition in terms of resistivity is obtained. If La is included in less than 0.05 at%, the effect of adding La can not be obtained, if more than 3 at% may cause a problem that the non-linearity is lowered and the leakage current increases.
- the ZnO-based varistor composition is based on the total metal atoms contained in the composition Zn 89 ⁇ 98 at%, Ca 0.2 ⁇ 10 at%, Co 0.2 ⁇ 5 at%, Cr 0.05 ⁇ 3 at% and La 0.05 ⁇ 3 at% It may include, in this case Mg may be included as 0 ⁇ 10.5 at%.
- Zn, Ca, Co, Cr and La are included as Zn 92 ⁇ 98 at%, Ca 0.2 ⁇ 4 at%, Co 0.2 ⁇ 2.5 at%, Cr 0.05 ⁇ 1 at% and La 0.05 ⁇ 0.5 at% More preferred.
- the varistor composition having the composition as described above can be particularly used in the production of high performance ZnO varistors, because the nonlinear characteristics and the clamping characteristics can be greatly improved.
- the ZnO-based varistor composition based on the total metal atoms contained in the composition, Zn 35 ⁇ 98 at%, Ca 0.2 ⁇ 30 at%, Mg 1 ⁇ 30 at%, Co 0.2 ⁇ 5 at%, Cr 0.05 ⁇ 3 at % And La 0.05-3 at%. More preferably, it may include Zn 45-97 at%, Ca 0.2-30 at%, Mg 1-30 at%, Co 0.2-2.5 at%, Cr 0.05-1 at% and La 0.05-0.5 at% have.
- Such compositions can be preferably used in the manufacture of varistors having a low clamping voltage, in particular with a small capacitance.
- ZnO-based varistor composition of the present invention may further comprise Al 0.005 ⁇ 0.2 at% based on the total atomic weight of the composition.
- the ZnO-based varistor composition of the present invention may further include other metal atoms in the range of 0.01 to 30 at% based on the total metal atoms included in the composition in addition to the above components.
- the other metal atoms may include Mn, Zr, Li, Na, K, Ga, and the like, and these may be included alone or in combination of two or more.
- Zn is added as ZnO to the ZnO-based varistor composition of the present invention
- Ca may be added in one or two or more mixed forms selected from the group consisting of CaCO 3 , CaO, and the like
- Mg may be added in one or two or more mixed forms selected from MgO and MgCO 3
- Co may be added in one or two or more mixed forms selected from the group consisting of Co 3 O 4 , CoO, and the like
- Cr may be added selected from the group consisting of Cr 2 O 3 and the like
- La may be added selected from the group consisting of La 2 O 3 and the like.
- ZnO-based varistor made of the varistor composition of the above, and also provides an electrical device comprising the ZnO-based varistor.
- It may be prepared by applying an electrode to the sintered body and package processing.
- the manufacturing method may be carried out by employing a method known in the art, except for using a novel composition.
- ZnO powder 93.7843g Zn 96.6 at%), CaCO 3 4.7022g (Ca 2.0 at%), Co 3 O 4 0.9487g (Co 1.0 at%), Cr 2 O 3 0.1796g (Cr 0.2 at%) 0.3851 g La 2 O 3 (La 0.2 at%) was weighed, and the weighed material was added to a ball mill containing partially stabilized zirconia (PSZ) with ion-exchanged water three times the weight of the weighed material, and mixed, Pulverized. Thereafter, dehydration and drying were performed to prepare granulated powder. The granulated powder thus obtained was calcined at a temperature of 700 ° C. for 2 hours in the air, and sufficiently ground to prepare a calcined powder.
- PSZ partially stabilized zirconia
- BM2 manufactured by SEKISUI
- BM-SZ manufactured by SEKISUI
- DOP dioctyl phthalate
- the slurry was formed on a PET film (polyethylene telephthalate) into a sheet shape having a thickness of about 25 ⁇ m, and then cut into predetermined dimensions to form a plurality of ceramic sheets.
- a PET film polyethylene telephthalate
- the Pd paste was screen printed on the surface of the ceramic sheet, stretched from one end surface of each ceramic sheet, and an electrode pattern was formed in a rectangle so that the other end was located on the ceramic sheet.
- the ceramic sheet in which the electrode pattern was formed was laminated
- the obtained laminate was cut into 1.6 mm long and 0.8 mm wide, accommodated in Zr Saggar, subjected to binder removal at 400 ° C. in air, and then calcined at 1200 ° C. in air for 3 hours to produce a ceramic sintered body. It was. Then, Ag paste was prepared, Ag paste was applied to both ends of the ceramic sintered body, and then baked at a temperature of 800 ° C. to form an external electrode to prepare a laminated varistor.
- V1mA Varistor voltage
- ⁇ nonlinearity index
- tan ⁇ electrical dielectric loss coefficient
- the varistor composition of the present invention is excellent in non-linearity, not only the varistor voltage is high but also the dielectric loss coefficient exhibited an appropriate value exhibited excellent characteristics.
- the nonlinear coefficient is very high as 100.
- a laminated varistor was manufactured in the same manner as in Example 1, except that the powder composition was changed as in Table 1 below.
- V1mA Varistor voltage
- ⁇ nonlinearity index
- tan ⁇ electrical dielectric loss coefficient
- a laminated varistor was manufactured in the same manner as in Example 1, except that the powder composition was changed as in Table 2 below.
- V1mA Varistor voltage (V1mA), nonlinear index ( ⁇ ), leakage current, density, etc. of the varistor device manufactured by the above method were measured, and the results are shown in Table 3 below.
- the varistor composition of the present invention has excellent nonlinearity, high varistor voltage, low leakage current, high density, and excellent characteristics.
- a laminated varistor was manufactured in the same manner as in Example 1, except that the powder composition was changed as in Table 4 below.
- V1mA Varistor voltage
- ⁇ nonlinear index
- ⁇ electrical dielectric loss coefficient
- resistivity resistivity
- a laminated varistor was manufactured in the same manner as in Example 1, except that the powder composition was changed as in Table 5 below.
- V1mA The varistor voltage (V1mA), the nonlinear index ( ⁇ ), the electrical dielectric loss coefficient (tan ⁇ ), the resistivity, and the like of the varistor device manufactured by the above method were measured and shown in FIG. 4.
- the varistor composition of the present invention exhibited preferable values in nonlinearity, dielectric loss coefficient value, and resistivity.
- a laminated varistor was manufactured in the same manner as in Example 1, except that the powder composition was changed as in Table 6 below.
- V1mA The varistor voltage (V1mA), the nonlinear index ( ⁇ ), the electrical dielectric loss coefficient (tan ⁇ ), the resistivity, and the like of the varistor device manufactured by the above method were measured, and the results are shown in FIG. 5.
- the varistor composition of the present invention exhibited preferable values in nonlinearity, leakage current and specific resistance even when Al was contained in a small amount.
- a laminated varistor was manufactured in the same manner as in Example 1, except that the powder composition was changed as in Table 7 below.
- V1mA Varistor voltage
- ⁇ nonlinear index
- tan ⁇ electrical dielectric loss coefficient
- resistivity resistivity
- a laminated varistor was manufactured in the same manner as in Example 1, except that the sintering temperature and the sintering time were changed as shown in Table 8 below.
- the varistor composition of the present invention exhibited the most desirable properties in terms of density, voltage, nonlinearity and leakage current when sintered at 1200 ° C. for 3 hours.
- the powder composition was changed as shown in Table 9 below, except that the prepared slurry was formed in a sheet shape having a thickness of about 33 ⁇ m on a PET film (polyethylene telephthalate), and a laminated varistor was manufactured in the same manner as in Example 1.
- Table 9 The powder composition was changed as shown in Table 9 below, except that the prepared slurry was formed in a sheet shape having a thickness of about 33 ⁇ m on a PET film (polyethylene telephthalate), and a laminated varistor was manufactured in the same manner as in Example 1.
- V1mA The relative density, varistor voltage (V1mA), leakage current (IL), nonlinear index ( ⁇ ), dielectric constant ( ⁇ ), and ZnO of the varistor element manufactured by the above method Specific resistance ( ⁇ ) was measured and shown in Table 10 below.
- Example 35 87.6 10 One - 98.8 0.580 - 81 547 0.8
- Example 36 85.6 10 3 - 96.9 0.594 - 31 468 1.1
- Example 40 68.6 10 20 - 92.0 - - - 132 1.7
- Example 41 58.6 10 30 - 93.0 - - -
- the varistor made of the varistor composition of the present invention was found to have a high density, a high varistor voltage, a small leakage current, and a specific resistance.
- the nonlinearity is excellent (see FIG. 7) and has a very low dielectric constant depending on the composition, thereby making it possible to manufacture a varistor having a small capacitance without being constrained by the area of the electrode.
- a method of measuring the specific resistance of the ZnO particles may be measured as a method of estimating the degree of improving the high current characteristic and the clamping voltage characteristic of the varistor.
- 8 and 10 show IZI measured in the range of 1 MHz to 3 GHz using an RF impedance / Material Analyzer (Agilent E4991A). In the graph, the lowest value of IZI represents the resistance of the ZnO particles, and the lower the value, the better the characteristics. As shown in Figure 8 and 10, the specific resistance of the ZnO particles in the present invention exhibited excellent overall characteristics.
- the powder composition was changed as shown in Table 11 below, and the prepared slurry was formed in a sheet shape having a thickness of about 20 ⁇ m on a PET film (polyethylene telephthalate), and the sintering temperature was 1180 ° C., the same as in Example 1 above.
- a laminated varistor was produced by the method.
- the varistor composition of the present invention can be confirmed that the electrical properties are superior to the existing Bi-based composition, the ESD resistance is excellent and the change rate is stable to 3% or less after the application of ESD.
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Abstract
Description
조성 | POWDER | |||||
ZnO | CaCO3 | Co3O4 | Cr2O3 | La2O3 | ||
At% | Zn98.6-x at% | Ca x:0.5~3.0 at% | Co 1.0 at% | Cr 0.2 at% | La 0.2 at% | |
실시예2 | Ca 0.5 at% | 97.2538g | 1.2006g | 0.9689g | 0.1835g | 0.3933g |
실시예3 | Ca 1.0 at% | 96.0810g | 2.3842g | 0.9621g | 0.1822g | 0.3905g |
실시예4 | Ca 3.0 at% | 91.5506g | 6.9567g | 0.9357g | 0.1772g | 0.3798g |
성분 | POWDER | ||||
Zn | Ca | Co | Cr | La | |
97.6-x at% | 2.0 at% | x:0.5~5.0 at% | 0.2 at% | 0.2 at% | |
실시예5 | 97.1 at% | 2.0 at% | 0.5 at% | 0.2 at% | 0.2 at% |
실시예6 | 95.6 at% | 2.0 at% | 2.0 at% | 0.2 at% | 0.2 at% |
실시예7 | 94.6 at% | 2.0 at% | 3.0 at% | 0.2 at% | 0.2 at% |
실시예8 | 93.6 at% | 2.0 at% | 4.0 at% | 0.2 at% | 0.2 at% |
실시예9 | 92.6 at% | 2.0 at% | 5.0 at% | 0.2 at% | 0.2 at% |
성분 | 밀도(g/cm3) | Vn(V/cm) | α | IL(μA/cm2) | |
실시예5 | Co 0.5 at% | 94.3 | 4028 | 68 | 0.25 |
실시예1 | Co 1.0 at% | 94.3 | 4281 | 78 | 0.18 |
실시예6 | Co 2.0 at% | 93.9 | 4575 | 66 | 0.23 |
실시예7 | Co 3.0 at% | 93.1 | 4386 | 28 | 0.30 |
실시예8 | Co 4.0 at% | 93.5 | 4373 | 35 | 0.25 |
실시예9 | Co 5.0 at% | 93.9 | 4852 | 54 | 0.36 |
성분 | POWDER | ||||
Zn | Ca | Co | Cr | La | |
96.8-x at% | 2.0 at% | 1.0 at% | x:0.1~3.0 at% | 0.2 at% | |
실시예10 | 96.7 at% | 2.0 at% | 1.0 at% | 0.1 at% | 0.2 at% |
실시예11 | 96.3 at% | 2.0 at% | 1.0 at% | 0.5 at% | 0.2 at% |
실시예12 | 95.8 at% | 2.0 at% | 1.0 at% | 1.0 at% | 0.2 at% |
실시예13 | 94.8 at% | 2.0 at% | 1.0 at% | 2.0 at% | 0.2 at% |
실시예14 | 93.8 at% | 2.0 at% | 1.0 at% | 3.0 at% | 0.2 at% |
성분 | POWDER | ||||
Zn | Ca | Co | Cr | La | |
96.8-x at% | 2.0 at% | 1.0 at% | 0.2 at% | x:0.1~3.0 at% | |
실시예15 | 96.7 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.1 at% |
실시예16 | 96.3 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.5 at% |
실시예17 | 95.8 at% | 2.0 at% | 1.0 at% | 0.2 at% | 1.0 at% |
실시예18 | 94.8 at% | 2.0 at% | 1.0 at% | 0.2 at% | 2.0 at% |
실시예19 | 93.8 at% | 2.0 at% | 1.0 at% | 0.2 at% | 3.0 at% |
성분 | POWDER | |||||
Zn | Ca | Co | Cr | La | Al | |
96.6-x at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | x:0.01~0.20 at% | |
실시예20 | 96.59 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 0.01 at% |
실시예21 | 96.58 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 0.02 at% |
실시예22 | 96.55 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 0.05 at% |
실시예23 | 96.50 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 0.10 at% |
실시예24 | 96.40 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 0.20 at% |
성분 | POWDER | |||||
Zn | Ca | Co | Cr | La | Zr | |
96.6-x at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | x:0.1~3.0 at% | |
실시예25 | 96.5 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 0.1 at% |
실시예26 | 96.1 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 0.5 at% |
실시예27 | 95.6 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 1.0 at% |
실시예28 | 94.6 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 2.0 at% |
실시예29 | 93.6 at% | 2.0 at% | 1.0 at% | 0.2 at% | 0.2 at% | 3.0 at% |
소결온도(℃) | 소결시간(h) | 밀도(g/cm3) | Vn(V/cm) | α | IL(μA/cm2) | |
실시예30 | 1100 | 3 | 89.8 | - | - | - |
실시예1 | 1200 | 3 | 94.3 | 4281 | 78 | 0.18 |
실시예31 | 1300 | 3 | 97.3 | 1009 | 41 | 7 |
실시예32 | 1350 | 3 | 96.7 | 745 | 18 | 36 |
실시예33 | 1200 | 1 | 92.8 | 4836 | 51 | 0.31 |
실시예34 | 1200 | 5 | 96.6 | 2822 | 46 | 0.28 |
POWDER | |||||||
ZnO | CaCO3 | MgO | Co3O4 | Cr2O3 | La2O3 | Al2O3 | |
Zn at% | Ca at% | Mg at% | Co at% | Cr at% | La at% | Al at% | |
실시예35 | 87.6 | 10 | 1 | 1 | 0.2 | 0.2 | - |
실시예36 | 85.6 | 10 | 3 | 1 | 0.2 | 0.2 | - |
실시예37 | 83.6 | 10 | 5 | 1 | 0.2 | 0.2 | - |
실시예38 | 81.1 | 10 | 7.5 | 1 | 0.2 | 0.2 | - |
실시예39 | 78.6 | 10 | 10 | 1 | 0.2 | 0.2 | - |
실시예40 | 68.6 | 10 | 20 | 1 | 0.2 | 0.2 | - |
실시예41 | 58.6 | 10 | 30 | 1 | 0.2 | 0.2 | - |
실시예42 | 66.6 | 2 | 30 | 1 | 0.2 | 0.2 | - |
실시예43 | 58.6 | 30 | 10 | 1 | 0.2 | 0.2 | - |
실시예44 | 38.6 | 30 | 30 | 1 | 0.2 | 0.2 | - |
실시예45 | 66.59 | 2 | 30 | 1 | 0.2 | 0.2 | 0.01 |
실시예46 | 58.59 | 10 | 30 | 1 | 0.2 | 0.2 | 0.01 |
실시예47 | 38.59 | 30 | 30 | 1 | 0.2 | 0.2 | 0.01 |
실시예48 | 38.58 | 30 | 30 | 1 | 0.2 | 0.2 | 0.02 |
실시예49 | 38.57 | 30 | 30 | 1 | 0.2 | 0.2 | 0.03 |
실시예50 | 38.55 | 30 | 30 | 1 | 0.2 | 0.2 | 0.05 |
실시예51 | 38.50 | 30 | 30 | 1 | 0.2 | 0.2 | 0.10 |
실시예(시편두께) | Powder 조성의 특징 | 물성 측정 결과 | ||||||||
ZnO | CaCO3 | MgO | Al2O3 | 상대밀도(%) | Vn(V/㎛) | IL(μA/cm2) | α | ε | ρ | |
Zn at% | Ca at% | Mg at% | Al at% | 1MHz | (Ωcm) | |||||
실시예35 | 87.6 | 10 | 1 | - | 98.8 | 0.580 | - | 81 | 547 | 0.8 |
실시예36 | 85.6 | 10 | 3 | - | 96.9 | 0.594 | - | 31 | 468 | 1.1 |
실시예37 | 83.6 | 10 | 5 | - | 95.5 | 0.693 | - | 84 | 392 | 1.1 |
실시예38 | 81.1 | 10 | 7.5 | - | 92.9 | 0.836 | - | 157 | 329 | 1.2 |
실시예39 | 78.6 | 10 | 10 | - | 90.9 | - | - | 46 | 269 | 1.4 |
실시예40 | 68.6 | 10 | 20 | - | 92.0 | - | - | - | 132 | 1.7 |
실시예41 | 58.6 | 10 | 30 | - | 93.0 | - | - | - | 82 | 2.1 |
실시예42 | 66.6 | 2 | 30 | - | 92.0 | - | - | - | 79 | 1.9 |
실시예43 | 58.6 | 30 | 10 | - | 94.0 | 2.19 | 0.8 | 45 | 25 | 2.1 |
실시예44 | 38.6 | 30 | 30 | - | 94.7 | 2.06 | 3 | 56 | 35 | 2.2 |
실시예45 | 66.59 | 2 | 30 | 0.01 | 95.0 | 1.38 | 0.2 | 79 | 127 | 1.9 |
실시예46 | 58.59 | 10 | 30 | 0.01 | 95.3 | 1.40 | 0.3 | 62 | 89 | 1.9 |
실시예47 | 38.59 | 30 | 30 | 0.01 | 97.0 | 2.35 | 0.08 | 162 | 35 | 2.2 |
실시예48 | 38.58 | 30 | 30 | 0.02 | 95.4 | 1.87 | 0.5 | 88 | 42 | 4.0 |
실시예49 | 38.57 | 30 | 30 | 0.03 | 94.5 | 1.73 | 3 | 59 | 45 | 4.2 |
실시예50 | 38.55 | 30 | 30 | 0.05 | 95.4 | 1.77 | 89 | 15 | 44 | 3.4 |
실시예51 | 38.50 | 30 | 30 | 0.10 | 96.1 | 1.22 | 313 | 9 | 52 | 4.3 |
POWDER | |||||||
ZnO | CaCO3 | MgO | Co3O4 | Cr2O3 | La2O3 | Al2O3 | |
Zn at% | Ca at% | Mg at% | Co at% | Cr at% | La at% | Al at% | |
실시예52 | 89.6 | 4 | 5 | 1 | 0.2 | 0.2 | - |
테스트 조건 | 전기적 특성 | ||||||||
적층구분 | 유지시간 | P-Vn(V) | N-Vn(V) | P-Alpha | P-Alpha | P-IL(㎛) | N-IL(㎛) | Cp(pF) | R(MΩ) |
20㎛, 3/1 | 1hr | 11.2 | 11.3 | 18.5 | 18.8 | 1.554 | 1.520 | 160.2 | 454.7 |
20㎛, 3/1 | 3hr | 6.8 | 6.9 | 13.8 | 13.9 | 4.647 | 4.365 | 148.0 | 1.02 |
테스트 조건 | ESD 감쇄파형 | ESD 내성 | ||||||
8kV | 15kV | |||||||
적층구분 | 유지시간 | + | - | + | - | |||
20㎛, 3/1 | 1hr | 213.6 | 37.3 | 19.7 | 2.21 | 2.26 | 1.40 | 0.56 |
20㎛, 3/1 | 3hr | 193.1 | 32.5 | 12.0 | 2.39 | 2.26 | 3.00 | 2.48 |
Claims (8)
- Bi2O3, Sb2O3 및 Pr6O11을 포함하지 않으며, Ca, Co, Cr 및 La를 포함하고 Mg를 선택적으로 포함하는 것을 특징으로 하는 ZnO계 바리스터 조성물.
- 청구항1에 있어서, 조성물에 포함되는 총 금속원자를 기준으로 Zn 35~98 at%, Ca 0.2~30 at%, Mg 0~30 at%, Co 0.2~5 at%, Cr 0.05~3 at% 및 La 0.05~3 at%를 포함하는 것을 특징으로 하는 ZnO계 바리스터 조성물.
- 청구항2에 있어서, Mg가 1~30 at%로 포함되는 것을 특징으로 하는 ZnO계 바리스터 조성물.
- 청구항2에 있어서, 조성물의 전체 원자량을 기준으로 Al 0.005~0.2 at%를 더 포함하는 것을 특징으로 하는 ZnO계 바리스터 조성물.
- 청구항2에 있어서, Zn, Ca, Mg, Co, Cr 및 La 이외의 다른 금속원자가 조성물의 전체 원자량을 기준으로 0.01~30 at%로 더 첨가되는 것을 특징으로 하는 ZnO계 바리스터 조성물.
- 청구항5 있어서, 상기 다른 금속원자가 Mn, Zr, Li, Na, K 및 Ga으로 이루어진 군으로부터 선택되는 1종 이상의 것임을 특징으로 하는 ZnO계 바리스터 조성물.
- 청구항1에 있어서, Zn은 ZnO로 첨가되고; Ca는 CaCO3 및 CaO 중에서 선택되는 1종 또는 2종 이상의 혼합 형태로 첨가되며; Mg는 MgO 및 MgCO3 중에서 선택되는 1종 또는 2종 이상의 혼합 형태로 첨가되며; Cr은 Cr2O3로 첨가되며; La는 La2O3로 첨가되는 것을 특징으로 하는 ZnO계 바리스터 조성물.
- 청구항 1의 바리스터 조성물로 제조되는 것을 특징으로 하는 ZnO계 바리스터.
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JP5163097B2 (ja) | 2007-12-20 | 2013-03-13 | Tdk株式会社 | バリスタ |
US8865028B2 (en) | 2009-08-27 | 2014-10-21 | Amotech Co. Ltd. | ZnO-based varistor composition |
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2010
- 2010-08-26 US US13/392,310 patent/US8865028B2/en active Active
- 2010-08-26 WO PCT/KR2010/005747 patent/WO2011025283A2/ko active Application Filing
- 2010-08-26 JP JP2012526658A patent/JP5665870B2/ja active Active
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US8865028B2 (en) | 2009-08-27 | 2014-10-21 | Amotech Co. Ltd. | ZnO-based varistor composition |
KR101617547B1 (ko) * | 2014-11-21 | 2016-05-03 | 한국세라믹기술원 | ZnO계 바리스터 조성물 |
Also Published As
Publication number | Publication date |
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JP5665870B2 (ja) | 2015-02-04 |
JP2013503474A (ja) | 2013-01-31 |
US8865028B2 (en) | 2014-10-21 |
WO2011025283A9 (ko) | 2011-09-01 |
US20120153237A1 (en) | 2012-06-21 |
WO2011025283A3 (ko) | 2011-07-14 |
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