WO2011025283A3 - ＺｎＯ계 바리스터 조성물 - Google Patents

ＺｎＯ계 바리스터 조성물 Download PDF

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WO2011025283A3
WO2011025283A3 PCT/KR2010/005747 KR2010005747W WO2011025283A3 WO 2011025283 A3 WO2011025283 A3 WO 2011025283A3 KR 2010005747 W KR2010005747 W KR 2010005747W WO 2011025283 A3 WO2011025283 A3 WO 2011025283A3
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composition
zno
varistor
contain
varistor composition
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PCT/KR2010/005747
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French (fr)
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WO2011025283A2 (ko
WO2011025283A9 (ko
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홍연우
신효순
여동훈
노상섭
홍경표
정준환
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주식회사 아모텍
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Priority claimed from KR1020090079746A external-priority patent/KR101161924B1/ko
Priority claimed from KR1020090129211A external-priority patent/KR101099243B1/ko
Application filed by 주식회사 아모텍 filed Critical 주식회사 아모텍
Priority to US13/392,310 priority Critical patent/US8865028B2/en
Priority to JP2012526658A priority patent/JP5665870B2/ja
Publication of WO2011025283A2 publication Critical patent/WO2011025283A2/ko
Publication of WO2011025283A3 publication Critical patent/WO2011025283A3/ko
Publication of WO2011025283A9 publication Critical patent/WO2011025283A9/ko

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  • Inorganic Chemistry (AREA)
  • Thermistors And Varistors (AREA)
  • Compositions Of Oxide Ceramics (AREA)

Abstract

본 발명은 산화아연(ZnO)을 주성분으로 하며, 칼슘(Ca)을 함유한 화합물을 부성분으로 포함하는 것을 특징으로 하는 ZnO계 바리스터 조성물에 관한 것이다. 상기 바리스터 조성물은 비선형계수, 클램핑 전압비, 써어지 흡수능 등의 면에서 우수하며, 특히, Bi2O3를 포함하지 않기 때문에 우수한 ESD(Electro-Static Discharge) 특성을 제공한다. 또한, 환경규제 성분인 Sb2O3를 포함하지 않으므로 우수한 작업안전성을 제공하며, 고온소결이 요구되어 제조원가 상승을 야기하는 Pr계 성분을 포함하지 않으므로 바리스터의 제조단가를 낮출 수 있다. 특히, 본 발명의 바리스터 조성물은 작은 정전용량을 가지면서도 낮은 클램핑(clamping) 전압을 가지는 것이 가능한 특징을 갖는다.
PCT/KR2010/005747 2009-08-27 2010-08-26 ＺｎＯ계 바리스터 조성물 WO2011025283A2 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/392,310 US8865028B2 (en) 2009-08-27 2010-08-26 ZnO-based varistor composition
JP2012526658A JP5665870B2 (ja) 2009-08-27 2010-08-26 ＺｎＯ系バリスタ組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR1020090079746A KR101161924B1 (ko) 2009-08-27 2009-08-27 ＺｎＯ계 바리스터 조성물
KR10-2009-0079746 2009-08-27
KR1020090129211A KR101099243B1 (ko) 2009-12-22 2009-12-22 ＺｎＯ계 바리스터 조성물
KR10-2009-0129211 2009-12-22

Publications (3)

Publication Number Publication Date
WO2011025283A2 WO2011025283A2 (ko) 2011-03-03
WO2011025283A3 true WO2011025283A3 (ko) 2011-07-14
WO2011025283A9 WO2011025283A9 (ko) 2011-09-01

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US (1) US8865028B2 (ko)
JP (1) JP5665870B2 (ko)
WO (1) WO2011025283A2 (ko)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8865028B2 (en) 2009-08-27 2014-10-21 Amotech Co. Ltd. ZnO-based varistor composition
EP2767610B1 (en) 2013-02-18 2015-12-30 Heraeus Deutschland GmbH & Co. KG ZnO-Al2O3-MgO sputtering target and method for the production thereof
WO2014148872A1 (ko) * 2013-03-21 2014-09-25 한양대학교 산학협력단 양방향 스위칭 특성을 갖는 2-단자 스위칭 소자 및 이를 포함하는 저항성 메모리 소자 크로스-포인트 어레이, 및 이들의 제조방법
KR101617547B1 (ko) * 2014-11-21 2016-05-03 한국세라믹기술원 ZnO계 바리스터 조성물
JP2016146379A (ja) * 2015-02-06 2016-08-12 パナソニックＩｐマネジメント株式会社 電圧非直線性抵抗体組成物とこれを用いたバリスタおよび積層バリスタ
CN105272207B (zh) * 2015-10-29 2017-10-31 清华大学 一种ZnO压敏陶瓷微球的制备方法
JP6703428B2 (ja) * 2016-03-28 2020-06-03 日本碍子株式会社 電圧非直線抵抗素子及びその製法
TWI605029B (zh) 2016-10-12 2017-11-11 不含銻的壓敏電阻組成物及積層式壓敏電阻器
CN110204329A (zh) * 2019-06-25 2019-09-06 安徽英泰利科技有限公司 一种耐低温压力变送器用压敏元件及其制备方法
KR20220032588A (ko) * 2019-08-15 2022-03-15 제이에프이미네라르 가부시키가이샤 산화아연 소결체 제조용 산화아연 분말 및 산화아연 소결체, 그리고, 이들의 제조 방법
CN113713725B (zh) * 2021-09-03 2023-11-21 杭州恒毅智创科技有限公司 一种空心核壳立方体氧化锌/四氧化三钴/氧化锌纳米复合材料的制备方法

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