WO2010129350A2 - Optical materials, optical, components, devices, and methods - Google Patents

Optical materials, optical, components, devices, and methods Download PDF

Info

Publication number
WO2010129350A2
WO2010129350A2 PCT/US2010/032799 US2010032799W WO2010129350A2 WO 2010129350 A2 WO2010129350 A2 WO 2010129350A2 US 2010032799 W US2010032799 W US 2010032799W WO 2010129350 A2 WO2010129350 A2 WO 2010129350A2
Authority
WO
WIPO (PCT)
Prior art keywords
accordance
optical material
optical
optical component
solid state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/US2010/032799
Other languages
English (en)
French (fr)
Other versions
WO2010129350A3 (en
Inventor
Rohit Modi
Patrick Landreman
John R. Linton
Emily M. Squires
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
QD Vision Inc
Original Assignee
QD Vision Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from PCT/US2009/002789 external-priority patent/WO2009151515A1/en
Application filed by QD Vision Inc filed Critical QD Vision Inc
Publication of WO2010129350A2 publication Critical patent/WO2010129350A2/en
Publication of WO2010129350A3 publication Critical patent/WO2010129350A3/en
Priority to US13/283,399 priority Critical patent/US9466757B2/en
Anticipated expiration legal-status Critical
Priority to US15/289,624 priority patent/US20170121602A1/en
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/021—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures
    • G02B5/0226—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place at the element's surface, e.g. by means of surface roughening or microprismatic structures having particles on the surface
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
    • C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
    • C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
    • C09K11/881—Chalcogenides
    • C09K11/883—Chalcogenides with zinc or cadmium
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V19/00—Fastening of light sources or lamp holders
    • F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
    • G02B1/002—Optical elements characterised by the material of which they are made; Optical coatings for optical elements made of materials engineered to provide properties not available in nature, e.g. metamaterials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/09—Beam shaping, e.g. changing the cross-sectional area, not otherwise provided for
    • G02B27/0916—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers
    • G02B27/0922—Adapting the beam shape of a semiconductor light source such as a laser diode or an LED, e.g. for efficiently coupling into optical fibers the semiconductor light source comprising an array of light emitters
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/02—Diffusing elements; Afocal elements
    • G02B5/0205—Diffusing elements; Afocal elements characterised by the diffusing properties
    • G02B5/0236—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element
    • G02B5/0242—Diffusing elements; Afocal elements characterised by the diffusing properties the diffusion taking place within the volume of the element by means of dispersed particles
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/206—Filters comprising particles embedded in a solid matrix
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00—Optical elements other than lenses
    • G02B5/20—Filters
    • G02B5/207—Filters comprising semiconducting materials
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0033—Means for improving the coupling-out of light from the light guide
    • G02B6/0035—Means for improving the coupling-out of light from the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/004—Scattering dots or dot-like elements, e.g. microbeads, scattering particles, nanoparticles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B2207/00—Coding scheme for general features or characteristics of optical elements and systems of subclass G02B, but not including elements and systems which would be classified in G02B6/00 and subgroups
    • G02B2207/101—Nanooptics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H10H20/8142—Bodies having reflecting means, e.g. semiconductor Bragg reflectors forming resonant cavity structures
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/70—Nanostructure
    • Y10S977/773—Nanoparticle, i.e. structure having three dimensions of 100 nm or less
    • Y10S977/774—Exhibiting three-dimensional carrier confinement, e.g. quantum dots
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/84—Manufacture, treatment, or detection of nanostructure
    • Y10S977/901—Manufacture, treatment, or detection of nanostructure having step or means utilizing electromagnetic property, e.g. optical, x-ray, electron beamm
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S977/00—Nanotechnology
    • Y10S977/902—Specified use of nanostructure
    • Y10S977/932—Specified use of nanostructure for electronic or optoelectronic application
    • Y10S977/949—Radiation emitter using nanostructure
    • Y10S977/95—Electromagnetic energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/13—Hollow or container type article [e.g., tube, vase, etc.]
    • Y10T428/131—Glass, ceramic, or sintered, fused, fired, or calcined metal oxide or metal carbide containing [e.g., porcelain, brick, cement, etc.]
    • Y10T428/1317—Multilayer [continuous layer]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/25—Web or sheet containing structurally defined element or component and including a second component containing structurally defined particles

Definitions

  • the present invention relates to the technical field of optical materials including nanoparticles, devices and components including optical materials including nanoparticles, and methods.
  • the present invention also relates to an optical material comprising quantum confined semiconductor nanoparticles.
  • the present invention also relates to methods for treating an optical material comprising quantum confined semiconductor nanoparticles.
  • the present invention also relates to devices and components including an optical material taught herein.
  • the present invention also relates to devices and components including an optical material treated by a method taught herein for treating an optical material.
  • the present invention also relates to methods for improving the solid state photoluminescence efficiency or at least one performance stability property of an optical material.
  • the present invention also relates to optical materials made by the methods taught herein.
  • the present invention also relates to an optical component including an optical material comprising quantum confined semiconductor nanoparticles, The present invention also relates to methods for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles.
  • the present invention also relates to devices and components including an optical component taught herein,
  • the present invention also relates to devices and components including an optical component treated by a method taught herein for treating an optical component.
  • the present invention also relates to methods for improving the solid state photoluminescence efficiency or at least one performance stability property of an optical component.
  • the present invention also relates to optical components made by the methods taught herein.
  • an optical material comprising quantum confined semiconductor nanoparticles, wherein the optical material has solid state photo luminescent quantum efficiency greater than or equai to 60%.
  • the optical material can have solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical materia! can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • an optical material comprising quantum confined semiconductor nanoparticles distributed in a host material, wherein the optical material has solid state photoluminescent quantum efficiency greater than or equal to the solution quantum efficiency of the quantum confined semiconductor nanoparticles prior to addition of the nanoparticles to the host material.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • an optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein the optical material has solid state photoluminescent quantum efficiency greater than or equal to 60%.
  • the optical material can have a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives,
  • an optical component including an optical material comprising quantum confined semiconductor nanoparticles distributed in a host material, wherein the optical material has solid state photoluminescent quantum efficiency greater than or equal to the solution quantum efficiency of the quantum confined semiconductor nanoparticles prior to addition of the nanoparticles to the host material.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the optical component can include an optical material comprising quantum confined semiconductor nanoparticles distributed in a host material that is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component can be protected by one or more barrier materials.
  • the optical component can include an optical material comprising quantum confined semiconductor nanoparticles distributed in a host material that is fully encapsulated.
  • Preferably all of the surface area of the optical material included in an optical component is fully encapsulated.
  • a method for treating an optical materia! comprising quantum confined semiconductor nanoparticles comprises exposing the optical material to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value,
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical materia! by at least 30% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical materia! can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical material to light flux and heat for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can comprise exposing the optical material to light flux and heat at the same time.
  • the method can comprise exposing the optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical material to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing optical material to light flux and heat when the optical material is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux and heat when the optical material is fully encapsulated.
  • Preferably all of the surface area of the optical material being treated is protected by one or more barrier materials.
  • the method can comprise exposing unencapsulated or partially encapsulated optical material to light flux and heat to achieve the desired result and fully encapsulating optical material following exposure to light flux and heat.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2 '
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature greater than 2O 0 C,
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature of at least 25°C.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 80 0 C.
  • the optica! material can further comprise a host material in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photo luminescent emission from the treated optical material,
  • the method can provide stabilized peak emission wavelength of pliotoluminescent emission from the treated optical material.
  • a method for treating an optical materia! comprising quantum confined semiconductor nanoparticles comprising exposing the optical material to a light flux and heat for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 70%.
  • the optical material can be exposed to light flux and heat for a period of time sufficient to achieve a soiid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives,
  • the method can comprise exposing the optical material to light flux and heat for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can comprise exposing the optical material to light flux and heat at the same time.
  • the method can comprise exposing the optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical material to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing optical material to light flux and heat when the optical material is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux and heat when the optical material is fully encapsulated.
  • the method can comprise exposing unencapsuiated or partially encapsulated optical material to light flux and heat to achieve the desired result and fully encapsulating optical material following exposure to light flux and heat.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 mW/crn 2'
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature greater than 20 0 C.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature of at least 25°C.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 8O 0 C,
  • the optical material can further comprise a host material in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical material.
  • a method for treating an optical material comprising quantum confined semiconductor nanoparticles comprising exposing at least partially encapsulated optical material to a light flux for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state phototuminescent efficiency of the optical material by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 30% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux when the optical material is fully encapsulated.
  • Preferably all of the surface area of the optical material being treated is protected by one or more barrier materials.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can further comprise exposing the at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical material to light flux when the optical material is fully encapsulated.
  • the method can comprise exposing partially encapsulated optical material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 ran to about 470 urn.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 rnW/cin 2 '
  • exposing to heat can comprise exposing the optical material to a temperature greater than 20 0 C.
  • exposing to heat can comprise exposing the optical material to a temperature of at least 25 0 C.
  • exposing to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 8O 0 C.
  • the optical material can further comprise a host material in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical material.
  • a method for treating an optical material comprising quantum confined semiconductor nanoparticles comprising exposing at least partially encapsulated optical material to a light flux for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 60%,
  • the at least partially encapsulated optical material can be exposed to light flux for a period of time sufficient to achieve a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux when the optical material is fully encapsulated.
  • Preferably all of the surface area of the optical material being treated is protected by one or more barrier materials.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time unti! the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can further comprise exposing the at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical material to light flux when the optical material is fully encapsulated.
  • the method can comprise exposing partially encapsulated optical material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm,
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nra,
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component,
  • the light flux can be in a range from about 10 to about 100 mW/cm 2
  • exposing to heat can comprise exposing the optical material to a temperature greater than 20 0 C,
  • exposing to heat can comprise exposing the optical material to a temperature of at least 25°C.
  • exposing to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 8O 0 C,
  • the optical material can further comprise a host material in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical material.
  • a method for improving at ieast one of solid state photoluminescent efficiency and a performance stability property of an optical material comprising quantum confined semiconductor nanoparticles wherein the method comprises a method taught herein for treating an optical material
  • a method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles comprising exposing the optical component to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 30% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical component to light flux and heat at the same time.
  • the method can comprise exposing the optical component to heat during at least a portion of the time the optical materia! is exposed to light flux.
  • the method can comprise exposing the optical component to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing the optical component to light flux and heat wherein the optical material included in the optical component is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component being treated can be protected by one or more barrier materials.
  • the method can further include exposing an optical component to light flux and heat when the optical material included in the optical component is fully encapsulated.
  • Preferably all of the surface area of the optical material included in an optical component being treated is protected by one or more barrier materials.
  • the method can comprise exposing an optical component including unencapsulated or partially encapsulated optical material to light flux and heat to achieve the desired result and fully encapsulating optical material in the optical component following exposure to light flux and heat.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 raW/cm 2'
  • Exposing the optica! component to heat can comprise exposing the optical component to a temperature greater than 2O 0 C.
  • Exposing the optical component to heat can comprise exposing the optical component to a temperature of at least 25°C.
  • Exposing the optical component to heat can comprise exposing the optical component to a temperature in a range from about 25° to about 80 0 C.
  • the optical component can include an optical material that can further comprise a host material in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical component.
  • a method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles comprises exposing the optical component to a light flux and heat for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 60%.
  • the optical component can be exposed to light flux and heat for a period of time sufficient to achieve a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scarterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical component to light flux and heat for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scarterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical component to light flux and heat at the same time.
  • the method can comprise exposing the optical component to heat during at least a portion of the time the optical materia! is exposed to light flux.
  • the method can comprise exposing the optical component to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing the optical component to light flux and heat wherein the optical material included in the optical component is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • the method can further include exposing an optical component to light flux and heat when the optical material included in the optica! component is fully encapsulated.
  • Preferably all of the surface area of the optical material included in an optical component being treated is protected by one or more barrier materials.
  • the method can comprise exposing an optical component including unencapsulated or partially encapsulated optical material to light flux and heat to achieve the desired result and fully encapsulating optical material in the optical component following exposure to light flux and heat.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2'
  • Exposing the optical component to heat can comprise exposing the optical component to a temperature greater than 2O 0 C.
  • Exposing the optical component to heat can comprise exposing the optical component to a temperature of at least 25 0 C.
  • Exposing the optical component to heat can comprise exposing the optical component to a temperature in a range from about 25° to about 80 0 C.
  • the optical component can include an optical material that can further comprise a host material in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical component.
  • a method for treating an optical component including an optica! material comprising quantum confined semiconductor nanoparticles comprising exposing an optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photo luminescent efficiency of the optical material by at least 30% of its pre-exposure solid state photo luminescent quantum efficiency value,
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optica! component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component being treated can be protected by one or more barrier materials.
  • the method can further include exposing an optical component to light flux when the optical material is fully encapsulated.
  • Preferably all of the surface area of the optical material included in an optical component being treated is protected by one or more barrier materials.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can further comprise exposing the optical component including at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical component including optical material to light flux when the optical material is fully encapsulated,
  • the method can comprise exposing optical component including partially encapsulated optical material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticies included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 rnW/cm 2'
  • exposing to heat can comprise exposing the optical component to a temperature greater than 20 0 C,
  • exposing to heat can comprise exposing the optical component to a temperature of at least 25°C.
  • exposing to heat can comprise exposing the optical component to a temperature in a range from about 25° to about SO 0 C.
  • the method can provide stabilized the color attributes of photo luminescent emission from the treated optical component.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical component,
  • a method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticies comprising exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 60%.
  • the optical component including at least partially encapsulated optical material can be exposed to light flux for a period of time sufficient to achieve a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component being treated can be protected by one or more barrier materials.
  • the method can further include exposing an optical component to light flux when the optical material is fully encapsulated.
  • Preferably all of the surface area of the optical material included in an optical component being treated is protected by one or more barrier materials.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can further comprise exposing the optical component including at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical component including optical material to light flux when the optical material is fully encapsulated.
  • the method can comprise exposing optical component including partially encapsulated optical material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2
  • exposing to heat can comprise exposing the optical component to a temperature greater than 2O 0 C.
  • exposing to heat can comprise exposing the optical component to a temperature of at least 25°C.
  • exposing to heat can comprise exposing the optical component to a temperature in a range from about 25° to about 80 D C.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical component.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical component.
  • a method for improving at least one of solid state photoluminescent efficiency and a performance stability property of an optical component including an optical material comprising quantum confined semiconductor nanoparticles wherein the method comprises a method taught herein for treating an optical component
  • a device including an optical material taught herein.
  • a device including an optical component taught herein.
  • the method comprises exposing the previously handled optical material comprising quantum confined semiconductor nanocrystals to light flux for a period of time sufficient to increase the solid state photoluminescent efficiency thereof, wherein the optical material is partially encapsulated during the exposure step.
  • the method can be carried out in an atmosphere that includes oxygen.
  • the method can be carried out in an inert atmosphere.
  • the method can be carried out in a nitrogen atmosphere.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 470nm.
  • the light flux can comprise a peak wavelengih that is less than the bandgap of the nanoparticles.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2 '
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical materia! being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux when the optical material is fully encapsulated,
  • Preferably all of the surface area of the optical material being treated is protected by one or more barrier materials.
  • the method can further include exposing the optical material to heat at least a portion of the time the optical component is exposed to light flux.
  • the method can further include exposing the optical material to heat during the total time the optical component is exposed to light flux.
  • Exposing the optical material to heat can comprise heating the optical material at a temperature greater than 20 0 C.
  • An optical material can comprise quantum confined semiconductor nanoparticles that include a core comprising a first semiconductor material and a shell on at least a portion of the outer surface of the core, the shell comprising one or more layers, wherein each layer may comprise a semiconductor material that is the same or different from that included in each of any other layer.
  • the method can further include fully encapsulating a partially encapsulated optical material following exposure to light flux and heat.
  • Such encapsulation step can be carried out in an oxygen free environment.
  • the optical material is fully encapsulated while being exposed to light flux.
  • the optical material can be at least partially or fully encapsulated by one or more barrier materials.
  • a barrier material can comprise a material that is a barrier to oxygen.
  • a barrier material can comprise a material that is a barrier to oxygen and water.
  • An optical material can be included in an optical component or other device when exposed to light flux.
  • An optical material can be treated while included in an optical component.
  • an optical material and an optical component treated by a method taught herein are provided.
  • encapsulation refers to protection against oxygen.
  • encapsulation can be complete (also referred to herein as full encapsulation or fully encapsulated), In certain embodiments, encapsulation can be less than complete (also referred to herein as partial encapsulation or partially encapsulated).
  • carrier material refers to a material that provides protection against at least oxygen.
  • solid state external quantum efficiency that does not change by more than X% is determined from measurements made on an item at the beginning of a 60 day period and after it has been stored in air for the following 60 days at 2O 0 C under fluorescent room light.
  • the value of the solid state external quantum efficiency does not change by more than X% of the value of the solid state external quantum efficiency measured at the beginning of the 60 day period.
  • fluorescent room light refers to general illumination light of about 5000 lumens that is provided by one or more fluorescent lamps.
  • solid state external quantum efficiency (also referred to herein as “EQE” or “solid state photoluminescent efficiency) is measured in a 12" integrating sphere using a NIST traceable calibrated light source, using the method developed by Mello et a!., Advanced Materials 9(3):230 (1997), which is hereby incorporated by reference.
  • FIGURE 1 depicts a schematic of a non-limiting example of an arrangement that can be used with methods described herein.
  • FIGURE 2 depicts spectra to illustrate a method for measuring quantum efficiency.
  • the attached figures are simplified representations presented for purposes of illustration only; the actual structures may differ in numerous respects, particularly including the relative scale of the articles depicted and aspects thereof. W
  • an optical material comprising quantum confined semiconductor nanoparticles, wherein the optical material has solid state photoluminescent quantum efficiency greater than or equal to 60%.
  • the optical material can have a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • An optical material can include at least one type of quantum confined semiconductor nanoparticle with respect to chemical composition, structure, and size.
  • the type(s) of quantum confined semiconductor nanoparticles included in an optical material can be determined by the wavelength of light to be converted and the wavelengths of the desired light output.
  • quantum confined semiconductor nanoparticles may or may not include a shell and/or a ligand on a surface thereof, A shell and/or ligand can passivate quantum confined semiconductor nanoparticles to prevent agglomeration or aggregation to overcome the Van der Waals binding force between the nanoparticles.
  • a shell can comprise an inorganic shell.
  • Two or more different type of quantum confined semiconductor nanoparticles may be included in an optical material, wherein each type is selected to obtain light having a predetermined color.
  • An optical material can include one or more different types of quantum confined semiconductor nanoparticles that include a core comprising a first semiconductor material and a shell on at least a portion of the outer surface of the core, the shell comprising one or more layers, wherein each layer may comprise a semiconductor material that is the same or different from that included in each of any other layer.
  • An optical material can comprise quantum confined semiconductor nanoparticles distributed in a host material.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material.
  • An optical material can further comprise light scatterers, Additional information concerning light scatterers is provided below.
  • ⁇ n optical material including light scatterers can include an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as Ihe amount of quantum confined semiconductor nanoparticles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • An optical material in accordance with the invention can have a solid state photoluininescent efficiency that does not change by more than 40% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical material in accordance with the invention can have a solid state photoluininescent efficiency of the material that does not change by more than 30% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical material in accordance with the invention can have a solid state photoluminescent efficiency of the material that does not change by more than 20% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical material in accordance with the invention can have a solid state photoluminescent efficiency of the material that does not change by more than 10% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical material in accordance with the invention can have a solid state photoluminescent efficiency of the material that does not change by more than 5% upon exposure to air for 60 days at 2O 0 C under fluorescent room light.
  • an optical material comprising quantum confined semiconductor nanoparticles distributed in a host material, wherein the optical material has solid state photoluminescent quantum efficiency greater than or equal to the solution quantum efficiency of the quantum confined semiconductor nanoparticles prior to addition of the nanoparticles to the host material.
  • An optical material can include at least one type of quantum confined semiconductor nanoparticle with respect to chemical composition, structure, and size.
  • the type(s) of quantum confined semiconductor nanoparticles included in an optical material can be determined by the wavelength of light to be converted and the wavelengths of the desired light output,
  • quantum confined semiconductor nanoparticles may or may not include a shell and/or a ligand on a surface thereof.
  • a shell and/or ligand can passivate quantum confined semiconductor nanoparticles to prevent agglomeration or aggregation to overcome the Van der Waals binding force between the nanoparticles.
  • a shell can comprise an inorganic shell, Two or more different type of quantum confined semiconductor nanoparticles (based on composition, structure and/or size) may be included in an optical material, wherein each type is selected to obtain light having a predetermined color.
  • An optical material can include one or more different types of quantum confined semiconductor nanoparticles that include a core comprising a first semiconductor material and a shell on at least a portion of the outer surface of the core, the shell comprising one or more layers, wherein each layer may comprise a semiconductor material that is the same or different from that included in each of any other layer.
  • An optical material can comprise quantum confined semiconductor nanoparticles distributed in a host material.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material.
  • An optical material can further comprise light scatterers. Additional information concerning light scatterers is provided below.
  • An optical material including light scatterers can include an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as the amount of quantum confined semiconductor nanoparticles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • An optical material in accordance with the invention can have a solid state photoluininescent efficiency that does not change by more than 40% upon exposure to air for 60 days at 20 0 C under fluorescent room light
  • An optical material in accordance with the invention can have a solid state photoluminescent efficiency of the material that does not change by more than 30% upon exposure to air for 60 days at 2O 0 C under fluorescent room light.
  • An optical material in accordance with the invention can have a solid state photoluminescent efficiency of the material that does not change by more than 20% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical material in accordance with the invention can have a solid state photoluininescent efficiency of the material that does not change by more than 10% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical materia! in accordance with the invention can have a solid state photoiuminescent efficiency of the material that does not change by more than 5% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • an optical component including an optical material comprising quantum confined semiconductor nanoparticles, wherein the optical material has solid state photoiuminescent quantum efficiency greater than or equal to 60%.
  • the optical material can have solid state photoiuminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • An optical material included in the optical component can include at least one type of quantum confined semiconductor nanoparticle with respect to chemical composition, structure, and size.
  • the type(s) of quantum confined semiconductor nanoparticles included in an optical material can be determined by the wavelength of light to be converted and the wavelengths of the desired light output.
  • quantum confined semiconductor nanoparticles may or may not include a shell and/or a ligand on a surface thereof.
  • a shell and/or ligand can passivate quantum confined semiconductor nanoparticles to prevent agglomeration or aggregation to overcome the Van der Waals binding force between the nanoparticles.
  • a shell can comprise an inorganic shell.
  • Two or more different type of quantum confined semiconductor nanoparticles may be included in an optical material included in an optical component, wherein each type is selected to obtain light having a predetermined color.
  • An optical material can include one or more different types of quantum confined semiconductor nanoparticles that include a core comprising a first semiconductor material and a shell on at least a portion of the outer surface of the core, the shell comprising one or more layers, wherein each layer may comprise a semiconductor material that is the same or different from that included in each of any other layer.
  • An optical material can comprise quantum confined semiconductor nanoparticles dispersed or distributed in a host material.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material
  • An optical material can further comprise light scatterers. Additional information concerning light scatterers is provided below.
  • the amount of light scatterers can be determined based on the particular optical component and its intended end-use application.
  • An optical material including light scatterers can include, for example, an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as the amount of quantum confined semiconductor nanoparticles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 40% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 30% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 20% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 10% upon exposure to air for 60 days at 2O 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 5% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component in accordance with the invention can further include a structural member that supports or contains the optical material.
  • a structural member can have a variety of different shapes or configurations. For example, it can be planar, curved, convex, concave, hollow, linear, circular, square, rectangular, oval, spherical, cylindrical, or any other shape or configuration that is appropriate based on the intended end-use application and design.
  • An example of a common structural components is a substrates such as a plate-like member,
  • An optical material can be disposed on a surface of a structural member.
  • An optical material can be disposed within a structural member.
  • an optical material can be included in a cavity or hollow portion that may be included in a structural member, e.g., but not limited to, a tube-like structural member, which can have any shape cross-section.
  • the configuration and dimensions of an optical component can be selected based on the intended end-use application and design.
  • An optical component can include an optical material that is at least partially encapsulated.
  • An optical component can include an optical material that is at least partially encapsulated by one or more barrier materials.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in the optical component can be protected by one or more barrier materials.
  • a barrier material may be in the form of a structural member designed and configured based on the intended end-use application for the optical component including same.
  • an optical component can comprise an optical material that is at least partially encapsulated between opposing structural members, wherein each of the structural members comprises one or more barrier materials, which can be the same or different.
  • an optical component can comprise an optical material that is at least partially encapsulated between a structural member and a coating or layer, wherein each of the structural member and coating or layer comprise one or more barrier materials, which can be the same or different.
  • a barrier material can be substantially oxygen impervious.
  • a barrier material can be substantially water impervious.
  • a barrier material can be substantially oxygen and water impervious.
  • a barrier material can also be a structural member.
  • an optical component can comprise an optical material included within a structural member.
  • an optical material can be included in a hollow or cavity portion of a tubular-like structural member (e.g., a tube, hollow capillary, hollow fiber, etc.) that can be open at either or both ends.
  • barrier materials and/or structural members comprising barrier materials can be included in an optical component in which the optical material is at least partially encapsulated. Such designs, configurations, and combinations can be selected based on the intended end-use application and design.
  • Barrier material included in an optical component can be optically transparent to permit light to pass into and/or out of optical material that it may encapsulate.
  • a barrier material and/or a structural member that is optically transparent may be included in a preselected region of the optical component to permit light to pass into and/or out of such region.
  • a preselected region can be a predetermined area of the of the optical component or the entire component, based on the design and intended end-use application.
  • transparent materials that can serve as barrier materials and/or structural members, include, but are not limited to, e.g., glass, polycarbonate, hardcoated polyester, acrylic, other known materials that are impervious to preselected environmental factors, (e.g., oxygen and/or moisture).
  • a barrier material and/or structural member can be flexible (e.g. but not limited to thin acrylic, epoxy, polycarbonate, PEN, PET, PE).
  • a barrier materia! can be a composite, consisting of multiple layers of different components, or coatings on a substrate.
  • a barrier material and/or structural member can be rigid (e.g. but not limited to glass, thick acrylic, thick transparent polymers, may be a composite or coated with layers (e.g. SiO s ) to improve barrier properties)
  • a barrier material and/or a structural member can have surface that is smooth or roughened.
  • a barrier material and/or a structural member can have a thickness that is substantially uniform.
  • an optical component can include an optical material that is fully encapsulated.
  • an optical component can include an optical material that is fully encapsulated by a barrier material or stractural member or by a combination of two or more barrier materials and/or structural members.
  • Preferably all of the surface area of the optical material included in an optical component is protected by one or more barrier materials.
  • An optical component including an optical material that is fully encapsulated by one or more barrier materials and/or structural member s can further include a seal to join such materials and/or structural members together.
  • a seal can comprise a material that also blocks the passage of oxygen and moisture.
  • an optical component can include an optical material that is encapsulated between opposing barrier materials that are sealed together by another barrier material or sealant.
  • An example of this arrangement includes an optical material that is fully encapsulated between opposing substrates (e.g., glass plates) that are sealed together by a seal.
  • a seal can comprise a layer of barrier material that covers the optical material, wherein the optical material and barrier material arrangement is sandwiched between the glass plates that are sealed together by the layer of barrier material,
  • a seal can comprise an edge or perimeter seal.
  • the seal can comprise an edge or perimeter seal.
  • a seal can comprise barrier material.
  • a seal can comprise an oxygen barrier.
  • a seal can comprise a water barrier.
  • a seal can comprise an oxygen and water barrier.
  • a seal can be substantially impervious to water and/or oxygen.
  • An optical material can be disposed on a substrate (e.g., but not limited to, a glass plate) and completely sealed by a barrier material that can block the passage or oxygen and water.
  • Non-limiting examples of materials that can be used to form an edge or perimeter seal include a glass-to-glass seal, a glass-to-metal seal, or other barrier material with sealant properties.
  • an optical component can comprise an optical material included in a tubular structural member (e.g., a tube, hollow capillary, hollow fiber, etc.) that can be sealed both ends.
  • a tubular structural member e.g., a tube, hollow capillary, hollow fiber, etc.
  • barrier materials and/or structural members comprising barrier materials can be included in an optical component in which the optical material is fully encapsulated. Such designs, configurations, and combinations can be selected based on the intended end-use application and design.
  • An optical component can include an optical material that is fully encapsulated by materials that are substantially oxygen impervious can be preferred.
  • an optica! component including an optical material comprising quantum confined semiconductor nanoparticles distributed in a host material, wherein the optical material has solid state photoluminescent quantum efficiency greater than or equal to the solution quantum efficiency of the quantum confined semiconductor nanoparticles prior to addition of the nanoparticles to the host material.
  • An optical material included in the optical component can include at least one type of quantum confined semiconductor iianoparticle with respect to chemical composition, structure, and size.
  • the type(s) of quantum confined semiconductor nanoparticles included in an optical material can be determined by the wavelength of light to be converted and the wavelengths of the desired light output.
  • quantum confined semiconductor nanoparticles may or may not include a shell and/or a ligand on a surface thereof.
  • a shell and/or ligand can passivate quantum confined semiconductor nanoparticles to prevent agglomeration or aggregation to overcome the Van der Waals binding force between the nanoparticles.
  • a shell can comprise an inorganic shell.
  • Two or more different type of quantum confined semiconductor nanoparticles may be included in an optical material included in an optical component, wherein each type is selected to obtain light having a predetermined color.
  • An optical material can include one or more different types of quantum confined semiconductor nanoparticles that include a core comprising a first semiconductor material and a shell on at least a portion of the outer surface of the core, the shell comprising one or more layers, wherein each layer may comprise a semiconductor material that is the same or different from that included in each of any other layer.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material
  • An optical material can further comprise light scatterers. Additional information concerning light scatterers is provided below.
  • the amount of light scatterers can be determined based on the particular optical component and its intended end-use application.
  • An optical material including light scatterers can include, for example, an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as the amount of quantum confined semiconductor nanoparticles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 40% upon exposure to air for 60 days at 2O 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 30% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 20% upon exposure to air for 60 days at 2O 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 10% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 5% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component in accordance with the invention can further include a structural member that supports or contains the optical material.
  • a structural member can have a variety of different shapes or configurations, For example, it can be planar, curved, convex, concave, hollow, linear, circular, square, rectangular, oval, spherical, cylindrical, or any other shape or configuration that is appropriate based on the intended end-use application and design.
  • An example of a common structural components is a substrates such as a plate-like member.
  • An optical material can be disposed on a surface of a structural member, An optical material can be disposed within a structural member.
  • an optical material can be included in a cavity or hollow portion that may be included in a structural member, e.g., but not limited to, a tube-like structural member, which can have any shape cross-section.
  • the dimension of an optical component can be selected based on the intended end-use application and design.
  • An optical component can include an optical materia! that is at least partially encapsulated.
  • An optical component can include an optical material that is at least partially encapsulated by one or more barrier materials.
  • Optical materia! can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component can be protected by one or more barrier materials.
  • a structural member can comprise a barrier material
  • a barrier material may be in the form of a structural member designed and configured based on the intended end-use application for the optical component including same.
  • an optical component can comprise an optical material that is at ieast partially encapsulated between opposing substrates, wherein each of the substrates comprises one or more barrier materials, which can be the same or different.
  • an optical component can comprise an optical material that is at least partially encapsulated between opposing structural members, wherein each of the structural members comprises one or more barrier materials, which can be the same or different.
  • an optical component can comprise an optical material that is at least partially encapsulated between a structural member and a coating or layer, wherein each of the structural member and coating or layer comprise one or more barrier materials, which can be the same or different,
  • a barrier material can be substantially oxygen impervious.
  • a barrier material can be substantially water impervious.
  • a barrier material can be substantially oxygen and water impervious.
  • a barrier material can also be a structural member
  • an optical component can comprise an optical material included within a structural member.
  • an optical material can be included in a hollow or cavity portion of a tubular-like structural member (e.g., a tube, hollow capillary, hollow fiber, etc.) that can be open at either or both ends.
  • barrier materials and/or structural members comprising barrier materials can be included in an optical component in which the optical material is at least partially encapsulated. Such designs, configurations, and combinations can be selected based on the intended end-use application and design, Barrier material included in an optical component can be optically transparent to permit light to pass into and/or out of optical material that it may encapsulate.
  • a barrier material and/or a structural member that is optically transparent may be included in a preselected region of the optical component to permit light to pass into and/or out of such region.
  • a preselected region can be a predetermined area of the of the optical component or the entire component, based on the design and intended end-use application.
  • transparent materials that can serve as barrier materials and/or structural members, include, but are not limited to, e.g., glass, polycarbonate, hardcoated polyester, acrylic, other known materials that are impervious to preselected environmental factors, (e.g., oxygen and/or moisture).
  • a barrier material and/or structural member can be flexible (e.g. but not limited to thin acrylic, epoxy, polycarbonate, PEN, PET, PE).
  • a barrier material can be a composite, consisting of multiple layers of different components, or coatings on a substrate,
  • a barrier material and/or structural member can be rigid (e.g. but not limited to glass, thick acrylic, thick transparent polymers, may be a composite or coated with layers (e.g. SiO x ) to improve barrier properties.
  • a barrier material and/or a structural member can have surface that is smooth or roughened.
  • a barrier material and/or a structural member can have a thickness that is substantially uniform.
  • an optical component can include an optical material that is fully encapsulated.
  • Preferably all of the surface area of the optical material included in an optical component is protected by one or more barrier materials.
  • an optical component can include an optical material that is fully encapsulated by a barrier material or structural member or by a combination of two or more barrier materials and/or structural members.
  • An optica! component including an optical material that is fully encapsulated by one or more barrier materials and/or structural member s can further include a seal to join such materials and/or structural members together.
  • a seal can comprise a material that also blocks the passage of oxygen and moisture.
  • an optical component can include an optical material that is encapsulated between opposing barrier materials that are sealed together by another barrier material or sealant.
  • An example of this arrangement includes an optical material that is fully encapsulated between opposing substrates (e.g., glass plates) that are sealed together by a seal.
  • a seal can comprise a layer of barrier material that covers the optical material, wherein the optical material and barrier material arrangement is sandwiched between the glass plates that are sealed together by the layer of barrier material.
  • a seal can comprise an edge or perimeter seal.
  • the seal can comprise an edge or perimeter seal.
  • a seal can comprise barrier material.
  • a seal can comprise an oxygen barrier.
  • a seal can comprise a water barrier
  • a seal can comprise an oxygen and water barrier.
  • a seal can be substantially impervious to water and/or oxygen.
  • An optical material can be disposed on a substrate (e.g., a glass plate) and completely sealed by a barrier material that can block the passage or oxygen and water.
  • a substrate e.g., a glass plate
  • Non-limiting examples of materials that can be used to form an edge or perimeter seal include a glass-to-glass seal, a giass-to-metal seal, or other barrier material with sealant properties,
  • an optical component can comprise an optical material included in a tubular structural member (e.g., a tube, hollow capillary, hollow fiber, etc.) that can be sealed both ends.
  • a tubular structural member e.g., a tube, hollow capillary, hollow fiber, etc.
  • barrier materials and/or structural members comprising barrier materials can be included in an optical component in which the optical material is fully encapsulated, Such designs, configurations, and combinations can be selected based on the intended end-use application and design.
  • An optical component including an optical materia! that is fully encapsulated by materials that are substantially oxygen impervious can be preferred.
  • a method for treating an optical material comprising quantum confined semiconductor nanoparticles comprising exposing the optical material to a light flux and heat for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 30% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical material to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material.
  • An optical material can further comprise light scatterers. Additional information concerning light scatterers is provided below.
  • the amount of light scatterers can be determined based on the particular optical component and its intended end-use application.
  • An optical material including light scatterers can include, for example, an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as the amount of quantum confined semiconductor nanoparticles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • the method can comprise exposing the optical material to light flux and heat for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can comprise exposing the optical material to light flux and heat at the same time.
  • the method can comprise exposing the optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical material to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing optical material to light flux and heat when the optical material is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials.
  • An optical material can be at least partially encapsulated by one or more barrier materials. Examples of barrier materials and combinations of barrier materials are described elsewhere herein.
  • the method can comprise an optical material is at least partially encapsulated by including the optical material on a barrier material (e.g., a glass substrate) and including a coating over at least a portion of a surface of the optical material opposite the barrier material.
  • a barrier material e.g., a glass substrate
  • the method can comprise an optical material is at least partially encapsulated by sandwiching the optical material between barrier materials (e.g., glass plates and/or other types of substrates.
  • barrier materials e.g., glass plates and/or other types of substrates.
  • the method can comprise exposing unencapsulated or partially encapsulated optical material to light flux and heat to achieve the desired result and fully encapsulating optica! material following exposure to light flux and heat.
  • the method can further include exposing optical material to light flux and heat when the optical material is fully encapsulated,
  • An optical material can be fully encapsulated by one or more barrier materials.
  • the method can comprise an optical material that is encapsulated between opposing substrates that are sealed together by a seal, wherein each of the substrates and seal are substantially oxygen impervious.
  • the method can comprise an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially water impervious.
  • the method can comprise an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially oxygen and water impervious.
  • the method can comprise an optical material that is disposed on a substrate and the optica! material is covered by a coating comprising a barrier material.
  • the method can comprise a barrier material comprising a material that is substantially oxygen impervious.
  • the method can comprise a barrier material that is substantially water impervious.
  • the method can comprise a barrier material that is substantially oxygen and water impervious.
  • a substrate that may be used in a method in accordance with the invention can comprise one or more barrier materials.
  • a substrate that may be used in a method in accordance with the invention can comprise glass.
  • Other barrier materials are described herein.
  • the method can comprise an optical material is encapsulated between glass plates that are sealed together by barrier material.
  • the method can comprise an optical material that is encapsulated between glass plates that are sealed together by a glass-to-glass perimeter or edge seal.
  • the method can comprise an optical material is encapsulated between glass plates that are sealed together by a glass-to-metal perimeter or edge seal.
  • the method can comprise an optical material that is encapsulated between glass plates that are sealed together by an epoxy or other sealant with barrier material properties.
  • An optical material can be exposed to light flux by irradiating the optical material with light from a light source having the desired peak wavelength and intensity.
  • the light flux can comprise a peak wavelength in a range from about 365ntn to about 480nm.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 470nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • Light flux can be provided by a light source comprising a light source with peak wavelength that is less than the bandgap of the optical material.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 365nm to about 470nm,
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 450 nm to about 470nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 470nm,
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 450nm to about 470nm.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2'
  • the light flux can be in a range from about 30 to about 50 mW/cm2.
  • the light flux can be in a range from about 20 to about 35 mW/cm2,
  • the light flux can be in a range from about 20 to about 30 mW7cm2, Other types of light sources that can emit light at the desired wavelength and with the desired intensity can also be used.
  • the light flux to which the optical material is exposed is uniform.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature greater than 20 0 C.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature of at least 25 0 C.
  • Exposing the optical material to heat can comprise exposing the optical materia! to a temperature in a range from about 25° to about 80 0 C.
  • the temperature does not exceed a temperature which is detrimental to the performance of the optical material or any encapsulation material.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical material.
  • a method for treating an optical material comprising quantum confined semiconductor nanoparticles comprising exposing the optical material to a light flux and heat for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 60%.
  • the optical material can have solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material.
  • An optical material can further comprise light scatterers. Additional information concerning light scatterers is provided below.
  • the amount of light scatterers can be determined based on the particular optical component and its intended end-use application.
  • An optical material including light scatterers can include, for example, an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as the amount of quantum confined semiconductor nano particles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • the method can comprise exposing the optical material to light flux and heat for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can comprise exposing the optical material to light flux and heat at the same time,
  • the method can comprise exposing the optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical material to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing optical material to light flux and heat when the optical material is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials
  • An optical material can be at least partially encapsulated by one or more barrier materials. Examples of barrier materials and combinations of barrier materials are described elsewhere herein.
  • the method can comprise an optical material is at least partially encapsulated by including the optical material on a barrier materia! (e.g., a glass substrate) and including a coating over at least a portion of a surface of the optical material opposite the barrier material.
  • a barrier materia! e.g., a glass substrate
  • the method can comprise an optica! material is at least partially encapsulated by sandwiching the optical materia! between barrier materials (e.g., glass plates and/or other types of substrates.
  • barrier materials e.g., glass plates and/or other types of substrates.
  • the method can comprise exposing unencapsulated or partially encapsulated optical material to tight flux and heat to achieve the desired result and fully encapsulating optical material following exposure to light flux and heat.
  • the method can further include exposing optical material to light flux and heat when the optical materia! is fully encapsulated.
  • Preferably all of the surface area of the optical materia! being treated is protected by one or more barrier materials.
  • An optical material can be fully encapsulated by one or more barrier materials.
  • the method can comprise an optical material that is encapsulated between opposing substrates that are sealed together by a seal, wherein each of the substrates and sea! are substantially oxygen impervious.
  • the method can comprise an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially water impervious.
  • the method can comprise an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially oxygen and water impervious.
  • the method can comprise an optical material that is disposed on a substrate and the optical material is covered by a coating comprising a barrier material.
  • the method can comprise a barrier material comprising a material that is substantially oxygen impervious.
  • the method can comprise a barrier material that is substantially water impervious.
  • the method can comprise a barrier material that is substantially oxygen and water impervious.
  • ⁇ substrate that may be used in a method in accordance with the invention can comprise one or more barrier materials.
  • a substrate that may be used in a method in accordance with the invention can comprise glass.
  • Other barrier materials are described herein.
  • the method can comprise an optical material is encapsulated between glass plates that are sealed together by barrier material.
  • the method can comprise an optical material that is encapsulated between glass plates that are sealed together by a glass-to-glass perimeter or edge seal.
  • the method can comprise an optical material is encapsulated between glass plates that are sealed together by a glass-to-metal perimeter or edge seal.
  • the method can comprise an optical material that is encapsulated between glass plates that are sealed together by an epoxy or other sealant with barrier materia! properties.
  • An optical material can be exposed to light flux by irradiating the optical material with light from a light source having the desired peak wavelength and intensity.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 470nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticies included in the optical material included in the optica! component.
  • Light flux can be provided by a light source comprising a light source with peak wavelength that is less than the bandgap of the optical material.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 365nm to about 470nm,
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 450 nm to about 470nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 470nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 450nm to about 470nm,
  • the light flux can be in a range from about 10 to about 100 mW/cm 2 '
  • the light flux can be in a range from about 30 to about 50 mW/cm2.
  • the light flux can be in a range from about 20 to about 35 mW/cm2,
  • the light flux can be in a range from about 20 to about 30 mW/cm2.
  • the light flux to which the optical material is exposed is uniform.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature greater than 20 0 C.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature of at least 25 °C.
  • Exposing the optical material to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 80 0 C.
  • the temperature does not exceed a temperature which is detrimental to the performance of the optical material or any encapsulation material.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical material.
  • a method for treating an optical material comprising quantum confined semiconductor nanoparticles comprising exposing at least partially encapsulated optical material to a light flux for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optica! material by at least 30% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux when the optical material is fully encapsulated.
  • Preferably all of the surface area of the optical material being treated is protected by one or more barrier materials.
  • the optical material is fully encapsulated.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can further comprise exposing the at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical material to light flux when the optical material is fully encapsulated.
  • the method can comprise exposing partially encapsulated optical material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2 '
  • exposing to heat can comprise exposing the optical inaterial to a temperature greater than 20 0 C.
  • exposing to heat can comprise exposing the optical material to a temperature of at least 25°C.
  • exposing to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 80 0 C.
  • the optical material can further comprise a host inaterial in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical material.
  • a method for treating an optical material comprising quantum confined semiconductor nanoparticles comprising exposing at least partially encapsulated optical material to a light flux for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 60%.
  • the at least partially encapsulated optical material can be exposed to light flux for a period of time sufficient to achieve a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc,
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux when the optical material is fully encapsulated.
  • Preferably all of the surface area of the optical material being treated is protected by one or more barrier materials.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can further comprise exposing the at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the at least partially encapsulated optical material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical material to light flux when the optical material is fully encapsulated.
  • the method can comprise exposing partially encapsulated optical material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 raW/cm 1
  • exposing to heat can comprise exposing the optical material to a temperature greater than 20 0 C.
  • exposing to heat can comprise exposing the optical material to a temperature of at least 25 0 C.
  • exposing to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 80 0 C,
  • the optical material can further comprise a host material in which the nanoparticles are distributed.
  • the method can provide stabilized the color attributes of photo luminescent emission from the treated optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical material.
  • a method for improving at least one of solid state photoluminescent efficiency and a performance stability property of an optical material comprising quantum confined semiconductor nanoparticles wherein the method comprises a method taught herein for treating an optical material.
  • An optical material treated in accordance with methods for treating an optical material disclosed herein can have a solid state photoluminescent efficiency that does not change by more than 40% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical material treated in accordance with the invention can have a solid state photoluminescent efficiency of the material that does not change by more than 30% upon exposure to air for 60 days at 2O 0 C under fluorescent room light,
  • An optical material treated in accordance with the invention can have a solid state phototuminescent efficiency of the material that does not change by more than 20% upon exposure to air for 60 days at 2O 0 C under fluorescent room light.
  • An optical material treated in accordance with the invention can have a solid state photoluminescent efficiency of the material that does not change by more than 10% upon exposure to air for 60 days at 2O 0 C under fluorescent room light.
  • An optical material treated in accordance with the invention can have a solid state photo luminescent efficiency of the material that does not change by more than 5% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • a method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles comprising exposing the optica! component to a light flux and heat for a period of time sufficient to increase the solid state photo Iu mines cent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photolutninescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 30% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time sufficient to increase solid state photoluminescent efficiency of the optical component by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component to light flux and heat for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material.
  • An optical material can further comprise fight scatterers. Additional information concerning light scatterers is provided below.
  • the amount of light scatterers can be determined based on the particular optica! component and its intended end-use application.
  • An optical material including light scatterers can include, for example, an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as the amount of quantum confined semiconductor nanoparticles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • the method can comprise exposing the optical component to light flux and heat at the same time.
  • the method can comprise exposing the optical component to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical component to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing optical component to light flux and heat when the optical material is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component being treated can be protected by one or more barrier materials.
  • An optical material can be at least partially encapsulated by one or more barrier materials. Examples of barrier materials and combinations of barrier materials are described elsewhere herein.
  • the method can comprise an optical component including an optical material is at least partially encapsulated by including the optical material on a barrier material (e.g., a glass substrate) and including a coating over at least a portion of a surface of the optical material opposite the barrier material.
  • a barrier material e.g., a glass substrate
  • the method can comprise an optical component including an optical material is at least partially encapsulated by sandwiching the optical material between barrier materials (e.g., glass plates and/or other types of substrates.
  • barrier materials e.g., glass plates and/or other types of substrates.
  • the method can comprise exposing an optical component including unencapsulated or partially encapsulated optical material to light flux and heat to achieve the desired result and fully encapsulating optical material following exposure to light flux and heat.
  • the method can further include exposing an optical component to light flux and heat when the optical material is fully encapsulated.
  • An optical material can be fully encapsulated by one or more barrier materials.
  • Preferably all of the surface area of the optical material included in an optical component being treated is protected by one or more barrier materials.
  • the method can comprise an optical component including an optical material that is encapsulated between opposing substrates that are sealed together by a seal, wherein each of the substrates and seal are substantially oxygen impervious.
  • the method can comprise an optical component including an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially water impervious.
  • the method can comprise an optical component including an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially oxygen and water impervious.
  • the method can comprise an optical component including an optical material that is disposed on a substrate and the optical material is covered by a coating comprising a barrier material.
  • the method can comprise a barrier material comprising a material that is substantially oxygen impervious.
  • the method can comprise a barrier material that is substantially water impervious.
  • the method can comprise a barrier material that is substantially oxygen and water impervious.
  • a substrate that may be used in a method in accordance with the invention can comprise one or more barrier materials,
  • a substrate that may be used in a method in accordance with the invention can comprise glass.
  • Other barrier materials are described herein.
  • the method can comprise an optical material is encapsulated between glass plates that are sealed together by barrier material,
  • the method can comprise an optical component including an optical material that is encapsulated between glass plates that are sealed together by a glass-to-glass perimeter or edge seal.
  • the method can comprise an optical component including an optical material is encapsulated between glass plates that are sealed together by a glass-to-metal perimeter or edge seal.
  • the method can comprise an optical component including an optical materia! that is encapsulated between glass plates that are sealed together by an epoxy or other sealant with barrier material properties.
  • An optical component including optical material can be exposed to light flux by irradiating the optical material with light from a light source having the desired peak wavelength and intensity,
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 470nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • Light flux can be provided by a light source comprising a light source with peak wavelength that is less than the bandgap of the optical material.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 365nm to about 470nm,
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 450 nm to about 470nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 470nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 450nm to about 470nm.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2'
  • the light flux can be in a range from about 30 to about 50 mW/cm2.
  • the light flux can be in a range from about 20 to about 35 mW/cm2,
  • the light flux can be in a range from about 20 to about 30 mW/cm2.
  • the light flux to which the optical material is exposed is uniform.
  • Exposing an optical component including optical material to heat can comprise exposing the optical material to a temperature greater than 20°C.
  • Exposing an optical component including optical materia! to heat can comprise exposing the optical material to a temperature of at least 25°C. Exposing an optical component including optical material to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 80 0 C.
  • the temperature does not exceed a temperature which is detrimental to the performance of the optical material or any encapsulation material.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated an optical component including optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated an optical component including optical material.
  • Tn accordance with another aspect of the present invention, there is provided a method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles, the method comprising exposing the optical component to a light flux and heat for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 60%.
  • the optical component can be exposed to light flux and heat for a period of time sufficient to achieve a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • host materials include polymers, resins, silicones, and glass. Other examples of host materials are provided below.
  • An optical material including a host material can include up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host material.
  • An optical materia! can further comprise tight scatterers. Additional information concerning light scatterers is provided below.
  • the amount of light scatterers can be determined based on the particular optical component and its intended end-use application.
  • An optical material including light scatterers can include, for example, an amount of light scatterers in a range from 0.01 weight percent based on the weight of the host material up to an amount that is the same as the amount of quantum confined semiconductor nanoparticles included in the optical material. Other amounts of light scatterers can be included.
  • An optical material can further comprise other optional additives.
  • Examples of other optional additives can include, but are not limited to, e.g., wetting or leveling agents).
  • the method can comprise exposing the optical component to light flux and heat at the same time.
  • the method can comprise exposing the optical component to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical component to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can further include exposing optical component to light flux and heat when the optical material is at least partially encapsulated.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component being treated can be protected by one or more barrier materials.
  • An optical material can be at least partially encapsulated by one or more barrier materials. Examples of barrier materials and combinations of barrier materials are described elsewhere herein.
  • the method can comprise an optical component including an optical material is at least partially encapsulated by including the optical material on a barrier material (e.g., a glass substrate) and including a coating over at least a portion of a surface of the optical material opposite the barrier material.
  • a barrier material e.g., a glass substrate
  • the method can comprise an optical component including an optical material is at least partially encapsulated by sandwiching the optical material between barrier materials (e.g., glass plates and/or other types of substrates).
  • barrier materials e.g., glass plates and/or other types of substrates.
  • the method can comprise exposing an optical component including unencapsulated or partially encapsulated optical material to light flux and heat to achieve the desired result and fully encapsulating optical material following exposure to light flux and heat.
  • Such full encapsulation step can be carried out in a oxygen free environment.
  • Such full encapsulation step can be carried out in a oxygen and water free environment.
  • the method can further include exposing an optical component to light flux and heat when the optical material is fully encapsulated.
  • An optical material can be fully encapsulated by one or more barrier materials.
  • Preferably all of the surface area of the optical material included in an optical component being treated is protected by one or more barrier materials.
  • the method can comprise an optical component including an optical material that is encapsulated between opposing substrates that are sealed together by a seal, wherein each of the substrates and seal are substantially oxygen impervious.
  • the method can comprise an optical component including an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially water impervious.
  • the method can comprise an optical component including an optical material that is encapsulated between opposing substrates are sealed together by a seal, wherein each of the substrates and seal are substantially oxygen and water impervious.
  • the method can comprise an optical component including an optical material that is disposed on a substrate and the optical material is covered by a coating comprising a barrier material.
  • the method can comprise a barrier material comprising a material that is substantially oxygen impervious.
  • the method can comprise a barrier material that is substantially water impervious.
  • the method can comprise a barrier material that is substantially oxygen and water impervious.
  • a substrate that may be used in a method in accordance with the invention can comprise one or more barrier materials.
  • a substrate that may be used in a method in accordance with the invention can comprise glass.
  • Other barrier materials are described herein.
  • the method can comprise an optical material is encapsulated between glass plates that are sealed together by barrier material.
  • the method can comprise an optical component including an optical material that is encapsulated between glass plates that are sealed together by a glass-to-glass perimeter or edge seal.
  • the method can comprise an optical component including an optical material is encapsulated between glass plates that are sealed together by a glass-to-metal perimeter or edge seal.
  • the method can comprise an optical component including an optical material that is encapsulated between glass plates that are sealed together by an epoxy or other sealant with barrier material properties.
  • An optical component including optical material can be exposed to light flux by irradiating the optical material with light from a light source having the desired peak wavelength and intensity.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 470nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor iianoparticles included in the optical material included in the optical component.
  • Light flux can be provided by a light source comprising a light source with peak wavelength that is less than the bandgap of the optical material.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength In a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 365nm to about 470nm.
  • Light flux can be provided by a light source comprising an LED light source with peak wavelength in a range from about 450 nm to about 470nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 480nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 470nm.
  • Light flux can be provided by a light source comprising a fluorescent lamp that emits light with a wavelength in a range from about 450nm to about 470nm.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2 '
  • the light flux can be in a range from about 30 to about 50 mW/cm2.
  • the light flux can be in a range from about 20 to about 35 mW/cm2,
  • the light flux can be in a range from about 20 to about 30 mW/cm2.
  • the light flux to which the optical material is exposed is uniform.
  • Exposing an optical component including optical material to heat can comprise exposing the optical materia! to a temperature greater than 2O 0 C.
  • Exposing an optical component including optical material to heat can comprise exposing the optical material to a temperature of at least 25 0 C.
  • Exposing an optical component including optical material to heat can comprise exposing the optical material to a temperature in a range from about 25° to about 80°C.
  • the temperature does not exceed a temperature which is detrimental to the performance of the optical material or any encapsulation material.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated an optica! component including optical material.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated an optical component including optical material.
  • Other information provided herein may also be usefi.il in practicing the above method.
  • a method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles comprising exposing an optical component including at least partially encapsulated optica! material to a light flux for a period of time sufficient to increase the solid state photoluminescent quantum efficiency of the optical material by at least 10% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 20% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 30% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 40% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to increase solid state photoluminescent efficiency of the optical material by at least 50% of its pre-exposure solid state photoluminescent quantum efficiency value.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optical material included in an optical component being treated can be protected by one or more barrier materials.
  • the method can further include exposing an optical component to light flux when the optical material is fully encapsulated.
  • the optical material is fully encapsulated.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoliiminescent efficiency increases to a substantially constant value.
  • the method can further comprise exposing the optical component including at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical component including optical material to light flux when the optical material is fully encapsulated.
  • the method can comprise exposing optical component including partially encapsulated optical material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2 '
  • exposing to heat can comprise exposing the optical component to a temperature greater than 2O 0 C.
  • exposing to heat can comprise exposing the optical component to a temperature of at least 25°C.
  • exposing to heat can comprise exposing the optical component to a temperature in a range from about 25° to about 80 0 C.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optical component.
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical component.
  • Other information provided herein may also be useful in practicing the above method.
  • a method for treating an optical component including an optical material comprising quantum confined semiconductor nanoparticles comprising exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time sufficient to achieve a solid state photoluminescent efficiency of the optical material greater than or equal to about 60%.
  • the optical component including at least partially encapsulated optical material can be exposed to light flux for a period of time sufficient to achieve a solid state photoluminescent quantum efficiency greater than or equal to 65%, greater than 70%, greater than 75%, greater than 80%, greater than 85%, greater than 90%, etc.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optica! material included in an optical component being treated can be protected by one or more barrier materials.
  • the optical material is fully encapsulated.
  • the optical material can further comprise a host material in which the nanoparticles are dispersed.
  • the optical material can further comprise light scatterers.
  • the optical material can further comprise other optional additives.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to a light flux for a period of time until the solid state photoluminescent efficiency increases to a substantially constant value.
  • the method can further comprise exposing the optical component including at least partially encapsulated optical material to a light flux and heat at the same time.
  • the method can comprise exposing the optical component including at least partially encapsulated optical material to heat during at least a portion of the time the optical material is exposed to light flux.
  • the method can comprise exposing the optical component including at least partially encapsulated optica! material to a light flux to light flux and heat sequentially.
  • the method can be carried out in a nitrogen atmosphere.
  • the method can be carried out in an atmosphere that includes oxygen (e.g., but not limited to, air).
  • oxygen e.g., but not limited to, air
  • the method can be carried out in an inert atmosphere.
  • the method can include exposing optical component including optical material to light flux when the optica! material is fully encapsulated.
  • the method can comprise exposing optical component including partially encapsulated optica! material to light flux to achieve the desired result and fully encapsulating optical material following exposure to light flux.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise peak wavelength in a range from about 450 nm to about 470 nm.
  • the light flux can have a center wavelength less than the bandgap of the quantum confined semiconductor nanoparticles included in the optical material included in the optical component.
  • the light flux can be in a range from about 10 to about 100 mW/crn 2'
  • exposing to heat can comprise exposing the optica! component to a temperature greater than 20 0 C,
  • exposing to heat can comprise exposing the optical component to a temperature of at least 25°C.
  • exposing to heat can comprise exposing the optical component to a temperature in a range from about 25° to about 80 0 C.
  • the method can provide stabilized the color attributes of photoluminescent emission from the treated optica! component,
  • the method can provide stabilized peak emission wavelength of photoluminescent emission from the treated optical component.
  • a method for improving at least one of solid state photoluminescent efficiency and a performance stability property of an optical component including an optical material comprising quantum confined semiconductor nanoparticles wherein the method comprises a method taught herein for treating an optical component.
  • An optical component treated in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 40% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component treated in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 30% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component treated in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 20% upon exposure to air for 60 days at 20°C under fluorescent room light.
  • An optical component treated in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 10% upon exposure to air for 60 days at 20 0 C under fluorescent room light.
  • An optical component treated in accordance with the invention can include an optical material having a solid state photoluminescent efficiency that does not change by more than 5% upon exposure to air for 60 days at 20 0 C under fluorescent room light,
  • a device including an optical material taught herein.
  • a device including an optical material treated by a method taught herein.
  • a device including an optical component taught herein.
  • a device including an optical component treated by a method taught herein.
  • a method for improving the solid state photoluminescent efficiency of an optical material comprising quantum confined semiconductor nanocrystals that has been previously handled in or exposed to an atmosphere including oxygen comprises exposing the previously oxygen exposed optical material comprising quantum confined semiconductor nanocrystals to light flux for a period of time sufficient to increase the solid state photoluminescent efficiency thereof, wherein the optical material is partially encapsulated during the exposure step,.
  • the method can be carried out in an atmosphere that includes oxygen.
  • the method can be carried out in an inert atmosphere.
  • the method can be carried out in a nitrogen atmosphere.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 480nm.
  • the light flux can comprise a peak wavelength in a range from about 365nm to about 470nm.
  • the light flux can comprise a peak wavelength that is less than the bandgap of the nanoparticles.
  • the light flux can be in a range from about 10 to about 100 mW/cm 2 '
  • Optical material can be partially encapsulated to various extents.
  • more than 50% of the surface area of the optica! material being treated can be protected by one or more barrier materials.
  • the method can further include exposing optical material to light flux when the optical material is fully encapsulated.
  • the optical material is fu ⁇ y encapsulated.
  • the method can further include exposing the optical material to heat at least a portion of the time the optical component is exposed to light flux.
  • the method can further include exposing the optical material to heat during the total time the optical component is exposed to light flux.
  • Exposing the optical material to heat can comprise heating the optical material at a temperature greater than 2O 0 C.
  • An optical material can comprise quantum confined semiconductor nanoparticles that include a core comprising a first semiconductor material and a shell on at least a portion of the outer surface of the core, the shell comprising one or more layers, wherein each layer may comprise a semiconductor material that is the same or different from that included in each of any other layer.
  • the method can further include fully encapsulating the optical material following exposure to light flux and heat.
  • Such encapsulation step can be carried out in an oxygen free environment.
  • the optical material is fully encapsulated while being exposed to light flux.
  • the optical material can be at least partially or fully encapsulated by one or more barrier materials.
  • a barrier material can comprise a material that is a barrier to oxygen.
  • a barrier material can comprise a materia! that is a barrier to oxygen and water.
  • An optical material can be included in an optical component or other device when exposed to light flux.
  • an optical material and an optical component treated by methods taught herein there is provided an optical material and an optical component treated by methods taught herein.
  • Figure 1 provides a schematic diagram of an example of a set-up that can be useful in carrying out the methods taught herein.
  • PL Samples refer to placement of optical materials and/or optical components in the configuration during treatment.
  • the light sources are LEDs, but as discussed herein, other types of light sources can be used,
  • the inner surface of the set-up can be light reflective.
  • exposing an optical material or optical component can comprise for example, carrying out the irradiation step in an oven (e.g., an IR oven, a convection oven, etc.), on a hot plate, etc.
  • an oven e.g., an IR oven, a convection oven, etc.
  • Other heating techniques readily ascertainable by the skill artisan can also be used. Heating of the optical material and/or optical component during exposure to light flux (e.g., irradiation by a light source) can accelerate or assist the radiation effects thereon.
  • heating at a temperature in a range from about 25 to about 80 C° can reduce irradiation time to reach a constant solid state photoluminescent efficiency to less than 24 hours, less than 12 hours, less than 6 hours, less than 3 hours, less than 30 minutes/
  • examples of light sources that can be utilized for the irradiation step include, but are not limited to, blue (e.g., 400-500nm) light-emitting diodes (LEDs), blue emitting fluorescent lamps, etc,
  • the light source comprises NARVA model LT 54 W T-5-HQ/0182 blue 2.
  • UV detectors that are sensitive to the wavelength of the radiation source.
  • an Ophir Nova Laser Power Meter (part number 7Z01500) including an Ophir UV detector head (part number PD300-UV-SH- ROHS) (preferably a detector head filter is installed) can be used with a 450 nm LED radiation source.
  • Light flux is preferably measured at the surface being irradiated.
  • Quantum confined semiconductor nanoparticles included in optical materials described herein can confine electrons and holes and have a photoluminescent property to absorb light and re-emit different wavelength light. Color characteristics of emitted light from quantum confined semiconductor nanoparticles depend on the size of the quantum confined semiconductor nanoparticles and the chemical composition of the quantum confined semiconductor nanoparticles.
  • the quantum confined semiconductor nanoparticles include at least one type of quantum confined semiconductor nanoparticle with respect to chemical composition, structure, and size.
  • the ty ⁇ e(s) of quantum confined semiconductor nanoparticles included in an optical component in accordance with the invention are determined by the wavelength desired for the particular end-use application in which the optical component will be used,
  • quantum confined semiconductor nanoparticles may or may not include a shell and/or a ligand on a surface thereof.
  • a shell and/or ligand can passivate quantum confined semiconductor nanoparticles to prevent agglomeration or aggregation to overcome the Van der Waals binding force between the nanoparticles
  • the ligand can comprise a material having an affinity for any host material in which a quantum confined semiconductor nanoparticle may be included.
  • a shell can comprise an inorganic shell
  • An optical material can include two or more different types of quantum confined semiconductor nanoparticles (based on composition, structure and/or size), wherein each type is selected to obtain light having a predetermined color.
  • An optical material can comprise one or more different types of quantum confined semiconductor nanoparticles (based on composition, structure and/or size), wherein each different type of quantum confined semiconductor nanoparticles emits light at predetermined wavelength that is different from the predetermined wavelength emitted by at least one of any other type of quantum confined semiconductor nanoparticles included in the optical material, and wherein the one or more different predetermined wavelengths are selected based on the end-use application.
  • the different types of quantum confined semiconductor nanoparticles can be included in two or more different optical materials.
  • optical materials can, for example, be included as separate layers of a layered arrangement and/or as separate features of a patterned layer that includes features including features of more than one of the optical materials.
  • An optical material described herein can comprise quantum confined semiconductor nanoparticles distributed in a host material.
  • a host material can comprises a solid host material.
  • Examples of a host material useful in various embodiments and aspect of the inventions described herein include polymers, monomers, resins, binders, glasses, metal oxides, and other nonpolymeric materials.
  • Preferred host materials for optical materials include polymeric and non-polymeric materials that are at least partially transparent, and preferably fully transparent, to preselected wavelengths of light.
  • Preselected wavelengths can include wavelengths of light in the visible (e.g., 400 - 700 nm) region of the electromagnetic spectrum,
  • host materials include cross-linked polymers and solvent-cast polymers, glass or a transparent resin.
  • a resin such as a non-curable resin, heat- curable resin, or photocurable resin can be suitably used from the viewpoint of processability. Additional examples of such a resin can be in the form of either an oligomer or a polymer, a melamine resin, a phenol resin, an alkyl resin, an epoxy resin, a polyurethane resin, a maleic resin, a polyamide resin, polymethyl methacrylate, polyacrylate, polycarbonate, polyvinyl alcohol, polyvinylpyrrolidone, hydroxyethylcellulose, carboxymethylcellulose, copolymers containing monomers forming these resins, and the like.
  • Other host materials can be identified by persons of ordinary skill in the relevant art.
  • a host material can comprise a photocurable resin.
  • a photocurable resin may be a preferred host material, e.g., where the optical material is to be patterned.
  • a photo-curable resin a photo-polymerizable resin such as an acrylic acid or inethacrylic acid based resin containing a reactive vinyl group, a photo-crosslinkable resin which generally contains a photo-sensitizer, such as polyvinyl cinnamate, benzophenone, or the like may be used.
  • a heat-curable resin may be used when a photo-sensitizer is not used. These resins may be used individually or in combination of two or more.
  • a host material can comprises a solvent-cast resin,
  • a polymer such as a polyurethane resin, a maleic resin, a polyamide resin, polymethyl methacrylate, polyacrylate, polycarbonate, polyvinyl alcohol, polyvinylpyrrolidone, hydroxyethylcellulose, carboxymethylcellulose, copolymers containing monomers forming these resins, and the like can be dissolved in solvents known to those skilled in the art, Upon evaporation of the solvent, the resin forms a solid host material for quantum confined semiconductor nanoparticles.
  • an optical material can comprise light scatterers and/or other additives (e.g., wetting or leveling agents).
  • Examples of light scatterers that can be used in the embodiments and aspects of the inventions described herein, include, without limitation, metal or metal oxide particles, air bubbles, and glass and polymeric beads (solid or hollow). Other light scatterers can be readily identified by those of ordinary skill in the art.
  • scatterers have a spherical shape
  • Preferred examples of scattering particles include, but are not limited to, TiO 2 , SiO 2 , BaTiO 3 , BaSO 4 , and ZnO. Particles of other materials that are non-reactive with the host material and that can increase the absorption pathlength of the excitation light in the host material can be used.
  • light scatterers may have a high index of refraction (e.g., TiO 2 , BaSO 4 , etc) or a low index of refraction (gas bubbles).
  • the size and size distribution of the scatterers is readily determinable by those of ordinary skill in the art.
  • the size and size distribution can be based upon the refractive index mismatch of the scattering particle and the host material in which it the light scatterer is to be dispersed, and the preselected wavelength(s) to be scattered according to Rayleigh scattering theory.
  • the surface of the scattering particle may further be treated to improve dispersability and stability in the host material.
  • the scattering particle comprises TiO 2 (R902+ from DuPont) of 0.2 ⁇ m particle size, in a concentration in a range from about 0.001 to about 5% by weight. In certain preferred embodiments, the concentration range of the scatterers is between 0.1 % and 2% by weight.
  • An optical material including quantum confined semiconductor nanoparticles and a host material can be prepared, for example, from an ink comprising quantum confined semiconductor nanoparticles and a liquid vehicle, wherein the liquid vehicle comprises a composition including one or more functional groups that are capable of being cross-linked.
  • the functional units can be cross-linked, for example, by UV treatment, thermal treatment, or another cross-linking technique readily ascertainable by a person of ordinary skill in a relevant art.
  • a composition including one or more functional groups that are capable of being cross- linked can be the liquid vehicle itself.
  • a composition including one or more functional groups that are capable of being cross- linked can be a co-solvent.
  • a composition including one or more functional groups that are capable of being cross- linked can be a component of a mixture with the liquid vehicle.
  • An ink can further include tight scatterers.
  • Quantum confined semiconductor nanoparticles e.g., semiconductor nanocrystals
  • an optical material can comprise quantum confined semiconductor nanoparticles dispersed in a host material.
  • An optical material can comprise up to about 30 weight percent quantum confined semiconductor nanoparticles based on the weight of the host materials.
  • an optical material can include from about 0.001 to about 25, from about 0.001 to about 20, from about 0.001 to about 15, from about 0.001 to about 10, from about 0.001 to about 5, from about 0.01 to about 4, from about 0.01 to about 3, from about 0.1 to about 3, from about 0.1 to 2, from about 0.5 to about weight percent quantum confined semiconductor nanoparticles based on the weight of the host material, weight percent quantum confined semiconductor nanoparticles based on the weight of the host material.
  • An optical material can also comprise light scatterers.
  • An optical material can include an amount of light scatterers in a range from 0.01 weight percent based on the weight of the optical material up to an amount that is the same as the amount of quantum confined semiconductor nanoparticles included in the optical material.
  • An optical material can include from about 0.001 to about 5 weight percent scatterers based on the weight of the optical material.
  • An optical component can comprise a structural member.
  • a structure member can comprise a rigid material, e.g., glass, polycarbonate, acrylic, quartz, sapphire, or other known rigid materials.
  • glasses include, but are not limited to, borosilicate glass, soda-lime glass, and aluminosilicate glass. Other glasses can be readily ascertained by one of ordinary skill in the art.
  • An example of a common structural member that can be used in an optical component and/or for at least partially encapsulating an optical material is a glass substrate.
  • a structural member can comprise a flexible material, e.g., a polymeric material such as plastic (e.g. but not limited to thin acrylic, epoxy, polycarbonate, PEN, PET, PE) or silicone.
  • a polymeric material such as plastic (e.g. but not limited to thin acrylic, epoxy, polycarbonate, PEN, PET, PE) or silicone.
  • a barrier material can be a composite, consisting of multiple layers of different components, or coatings on a substrate.
  • a structural member can comprise a flexible material including a silica or glass coating thereon. If flexibility is desired, the silica or glass coating is selected to be sufficiently thin to retain the flexible nature of the base flexible material.
  • a structural member can be selected to be substantially optically transparent to wavelengths of interest for the particular end-use application.
  • the structural member can be selected to be at least 90% transparent, at least 95% transparent, at least 99% transparent.
  • a structural member can be selected to be optically translucent.
  • ⁇ structural member can be selected to be have a transmission haze (as defined in ASTM D1003-0095) in a range from about 0.1 % to about 5%. (ASTM D1003-0095 is hereby incorporated herein by reference.)
  • a structural member can comprise a smooth surface.
  • a structural member can comprise a non-smooth surface.
  • a structural component can comprise a substrate wherein , one or both of the major surfaces of the substrate is smooth.
  • a structural component can comprise a substrate wherein one or both major surfaces of the substrate can be corrugated.
  • a structural component can comprise a substrate wherein one or both major surfaces of the substrate can be roughened.
  • a structural component can comprise a substrate wherein one or both major surfaces of the substrate can be textured.
  • a structural component can comprise a substrate wherein one or both major surfaces of the substrate can be concave,
  • a structural component can comprise a substrate wherein one or both major surfaces of the substrate can be convex.
  • a structural component can comprise a substrate wherein one major surface of the substrate can comprise microlenses.
  • a structural component can comprise a substrate wherein one or more surfaces is flat, concave, convex, or featured (e.g., including one or more positive or negative features).
  • a structural component can comprise other surface characteristics that are selected to be included based on the particular end-use application.
  • a structural component can comprise a geometrical shape and dimensions that can be selected based on the particular end-use application.
  • a structural component can have a thickness that is substantially uniform.
  • An optical component can include at least one layer including an optical material comprising quantum confined semiconductor nanoparticies.
  • An optical component can include more than one type of quantum confined semiconductor nanoparticies.
  • Each type can be included in a separate optical material and each can be disposed as a separate layer.
  • An optical material can be disposed on a surface of a structural member
  • An optical material can be disposed as an uninterrupted layer across a surface of a structural member.
  • An optical material can be disposed as a layer.
  • a layer comprising an optical material can have a thickness from about 0.1 to about 200 microns.
  • a layer comprising an optical material can have a thickness from about 10 to about 200 microns.
  • a layer comprising an optical material can have a thickness from about 30 to about 80 microns.
  • An optical component can include other optional layers.
  • a filter While further including may be undesirable for energy considerations, there may be instances in which a filter is included for other reasons. In such instances, a filter may be included. If included, a filter may cover all or at least a predetermined portion of the structural member. A filter can be included for blocking the passage of one or more predetermined wavelengths of light. A filter layer can be included over or under the optical material.
  • An optical component can include multiple filter layers on various surfaces of structural member.
  • a notch filter layer can optionally be included,
  • An optical component can include one or more anti-reflection coatings.
  • An optional component can include one or more wavelength selective reflective coatings. Such coatings can be included, for example, to reflect light back toward the light source.
  • An optical component may further include outcoiipling members or structures across at least a portion of a surface thereof, For example, outcoupling members or structures may be uniformly distributed across a surface. Outcoupling members or structures may vary in shape, size, and/or frequency in order to achieve a more uniform light distribution outcoupled from the surface. Outcoupling members or structures may be positive, e.g., sitting or projecting above the surface of optical component, or negative, e.g., depressions in the surface of the optical component, or a combination of both.
  • An optical component can optionally include a lens, prismatic surface, grating, etc. on the surface thereof from which light is emitted.
  • Other coatings can also optionally be included on such surface.
  • Outcoupling members or structures can be formed, for example, by molding, embossing, lamination, applying a curable formulation (formed, for example, by techniques including, but not limited to, spraying, lithography, printing (screen, inkjet, flexography, etc), etc.).
  • a curable formulation formed, for example, by techniques including, but not limited to, spraying, lithography, printing (screen, inkjet, flexography, etc), etc.
  • a structural member can include light scatterers,
  • a structural member can include air bubbles or air gaps.
  • An optical component can include one or more major, surfaces with a flat or matte finish.
  • An optical component can include one or more surfaces with a gloss finish.
  • barrier films or coatings include, without limitation, a hard metal oxide coating, a thin glass layer, and Barix coating materials available from Vitex Systems, Inc. Other barrier films or coating can be readily ascertained by one of ordinary skill in the art. As mentioned herein, one or more barrier materials can be used to fully or partially encapsulate the optical material.
  • a barrier material can comprise a film.
  • a barrier material can comprise a coating.
  • a barrier material can comprise a structural member.
  • a seal can comprise glass frit, glass frit in a binder system, solder in combination with a metallized substrate. Other sealants can be used. Other known techniques for sealing glass-to- glass, glass-to-metal, and barrier films or sealants together can be used.
  • a seal will not partially or fully delaminate or otherwise fail during the useful lifetime of the optical component.
  • Barrier materials can also be sealed together by a seal material comprising an adhesive material that can be chosen for its optical transmission properties and its adhesion qualities.
  • Barrier materials and sealing materials preferably will not yellow or discolor during sealing. More preferably, barrier materials and sealing materials will not yellow or discolor during the useful lifetime of the optical component so as to substantially alter the optical properties of the optical material or optical component.
  • a sealing material has oxygen barrier properties.
  • a sealing material can also have moisture barrier properties.
  • Sealing materials can preferably be hardened (e.g., cured or dried) under conditions that are not detrimental to an optical material and the external quantum efficiency of an optical material, Examples include, but are not limited to, sealants such as an adhesive material can be UV cured, e.g., UV curable acrylic wethanes, such as products sold by Norland Adhesives called Norland 68 and Norland 68 T.
  • sealants such as an adhesive material can be UV cured, e.g., UV curable acrylic wethanes, such as products sold by Norland Adhesives called Norland 68 and Norland 68 T.
  • An optical component can further include a cover, coating or layer for protection from the environment (e.g., dust, moisture, and the like) and/or scratching or abrasion.
  • the optical material e.g., comprising quantum confined semiconductor nanoparticles dispersed in a host material (preferably a polymer or glass)
  • a host material preferably a polymer or glass
  • the optical material can be exposed to light and heat for a period of time sufficient to increase the solid state photoluminescent efficiency of the optical material.
  • the exposure to light or light and heat can be continued for a period of time until the solid state photoluminescent efficiency reaches a substantially constant value.
  • a light source that emits light with a wavelength in a range from about 365 to about 480 nm can be used as the source of light. In certain embodiments, a light source that emits light with a wavelength in a range from about 365 to about 470 nm can be used as the source of light.
  • a light source can comprise an LED light source with peak wavelength in a range from about 365nm to about 480nm.
  • a light source can comprise a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 480nm.
  • a light source can comprise an LED light source with peak wavelength in a range from about 365nm to about 470nm.
  • a light source can comprise a fluorescent lamp that emits light with a wavelength in a range from about 365nm to about 470nm.
  • the optical material can be irradiated by a light source with peak wavelength in a range from about 450nm to about 470nm.
  • a light source with peak wavelength in a range from about 450nm to about 470nm.
  • an LED light source with peak wavelength a range from about 450nm to about 470nm can be used as the source of light.
  • the light flux can be from about 10 to about 100 mW/cm 2 , preferably from about 20 to about 35 mW/cm 2 , and more preferably from about 20 to about 30 mW/cm 2 .
  • the optica! material can be exposed to light while at a temperature in a range from about 25° to about 80 0 C.
  • the optical material e.g., comprising quantum confined semiconductor nanoparticles dispersed in a host material (preferably a polymer or glass)
  • a host material preferably a polymer or glass
  • the glass plates can further be sealed together around the perimeter or edge.
  • the seal can comprise barrier material.
  • the seal can comprise an oxygen barrier.
  • the seal can comprise a water barrier..
  • the seal can comprise an oxygen and water barrier.
  • the seal can be substantially impervious to water and/or oxygen.
  • sealing techniques include, but are not limited to, glass-to-glass seal, glass-to-metal seal, sealing materials that are substantially impervious to oxygen and/or water, epoxies and other sealing materials that slow down penetration of oxygen and/or moisture.
  • the optical material e.g., comprising quantum confined semiconductor nanoparticles dispersed in a host material (preferably a polymer or glass)
  • a host material preferably a polymer or glass
  • Solid state photoluminescent efficiency can be measured, for example, with use of a spectrophotometer in an integrating sphere including a NIST traceable calibrated light source.
  • Solid state external quantum efficiency also referred to herein as "EQE” or "solid state photoluminescent efficiency is measured in a 12" integrating sphere using a NIST traceable calibrated light source, using the method developed by Mello et al., Advanced Materials 9(3):230 (1997), which is hereby incorporated by reference.
  • the method uses a collimated 450 nm LED source, an integrating sphere and a spectrometer. Three measurements are taken. First, the LED directly illuminates the integrating sphere giving a spectrum labeled Ll and shown in Figure 2 (which graphically represents emission intensity (a.u.) as a function of wavelength (nm)) for purposes of example in describing this method.
  • the PL sample is placed into the integrating sphere so that only diffuse LED light illuminates the sample giving the (L2+P2) spectrum shown for purposes of example in Figure 2.
  • the PL sample is placed into the integrating sphere so that the LED directly illuminates the sample (just off normal incidence) giving the (L3+P3) spectrum shown for purposes of example 4.
  • each spectral contribution (L' s and P's) is computed.
  • Ll , L2 and L3 correspond to the sums of the LED spectra for each measurement and P2 and P3 are the sums associated with the PL spectra for 2nd and 3rd measurements.
  • the following equation then gives the external PL quantum efficiency:
  • the optical material can further include light scattering particles and other optional additives described herein.
  • Dimethyl cadmium, diethyl zinc, and hexamethyldisilathiane are used as the Cd, Zn, and S precursors, respectively.
  • the Cd and Zn are mixed in equimolar ratios while the S was in two-fold excess relative to the Cd and Zn.
  • Two sets of Cd/Zn (0.31 mmol of dimethylcadmium and diethylzinc) and S (1.24 mmol of hexamethyldisilathiane) samples are each dissolved in 4 niL of trioctylphosphine inside a nitrogen atmosphere glove box. Once the precursor solutions are prepared, the reaction flasks are heated to 155 0 C under nitrogen.
  • Dimethyl cadmium, diethyl zinc, and hexamethyldisilathiane are used as the Cd, Zn, and S precursors, respectively.
  • the Cd and Zn are mixed in equimolar ratios while the S was in two-fold excess relative to the Cd and Zn.
  • Two sets of Cd/Zn (5.5 mmol of dimethylcadmium and diethylzinc) and S (22 mmol of hexamethyldisilaihiane) samples are each dissolved in 80 mL of trioctylphosphine inside a nitrogen atmosphere glove box. Once the precursor solutions are prepared, the reaction flasks are heated to 155 0 C under nitrogen.
  • the precursor solutions are added dropwise the respective reactor solutions over the course of 2 hours at 155 0 C using a syringe pump.
  • the nanocrystals are transferred to a nitrogen atmosphere glovebox and precipitated out of the growth solution by adding a 3 : 1 mixture of methanol and isopropanol.
  • the resulting precipitates are then dispersed in hexane and precipitated out of solution for a second time by adding a 3 : 1 mixture of methanol and isopropanol.
  • the isolated core-shell nanocrystals are then dissolved in chloroform and the solutions from the three batches are mixed.
  • the following film is prepared using optical material including semiconductor nanocrystais (prepared substantially in accordance with the synthesis described in Example 1).
  • the semiconductor nanocrystals prepared substantially in accordance with the synthesis described in Example I A comprise orange-emitting semiconductor nanocrystals dispersed in Fluorobenzene have a peak emission at 588 nm, a FWHM of about 28 nm, a solution quantum yield of 83% and a concentration of 20 mg/ml.
  • 2.7 ml of the 20 mg/ml suspension of the red-emitting nanocrystals is added from a 3 mL syringe to a 20 ml septum capped vial including a magnetic stirrer bar, the system is closed and purged through a syringe needle under vacuum then backfilled with nitrogen. Approximately 90 percent of the solvent is removed from the vial by vacuum stripping.
  • 0.5 ml of RD-12, a low viscosity reactive diluent commercially available from Radcure Corp, 9 Audrey Pl, Fairfield, NJ 07004-3401 is added. Remaining solvent is removed from the vial by vacuum stripping.
  • DR-150 is a UV-curable acrylic formulation commercially available from Radcure.
  • the mixture is then placed in an ultrasonic bath for approximately 15 minutes,
  • Ti-Pure 902+ available from DuPont
  • Ti-Pure 902+ available from DuPont
  • the vial is then capped and deaerated under vacuum and backfilled with nitrogen.
  • the closed vial is put in an ultrasonic bath for 50 minutes. Care is taken to avoid temperatures over 40 0 C while the sample is in the ultrasonic bath, The sample is stored in the dark until used to make a combined formulation with long wavelength semiconductor and additional matrix material.
  • the semiconductor nanocrystals prepared substantially in accordance with the synthesis described in Example IB comprise red-emitting semiconductor nanocrystals dispersed in Chloroform and have a peak emission at 632 ran, a FWHM of about 40 nm, a solution quantum yieid of 60% and a concentration of 56.7 mg/ml.
  • DR-150 is then added to the vial through a syringe and the mixture is mixed using a Vortex mixer.
  • DR- 150 is a UV-curable acrylic formulation commercially available from Radcure.
  • the mixture is then placed in an ultrasonic bath for approximately 50 minutes.
  • Ti-Pure 902+ available from DuPont
  • Ti-Pure 902+ available from DuPont
  • the vial is then capped and deaerated under vacuum and backfilled with nitrogen.
  • the closed vial is put in an ultrasonic bath for 60 minutes. Care is taken to avoid temperatures over 40 0 C while the sample is in the ultrasonic bath. The sample is stored in the dark until used to make a combined formulation with long wavelength semiconductor and additional matrix material.
  • RD-12 a low viscosity reactive diluent commercially available from Radcure Corp, 9 Audrey PI, Fairfield, NJ 07004-3401 and 3.8 ml of DR-150, also available from Radcure Corp, is added to a 40 ml vial and the mixture is mixed using a Vortex mixer. The mixture is then placed in an ultrasonic bath for approximately 30 minutes.
  • TiO 2 Approximately 0.05 gram TiO 2 (Ti-Pure 902+ available from DuPont) is next added to the open vial as well as 0.05 grams of GL0179B6/45 space beads available from MO-SCI Specialty Products, Rolla, MO 65401 USA, and then mixed using a Vortex mixer. After mixing, the closed vial is put in an ultrasonic bath for approximately 50 minutes. Care is taken to avoid temperatures over 4O 0 C while the sample is in the ultrasonic bath. The sample is stored in the dark until used to make a combined formulation with long wavelength semiconductor and additional matrix material.
  • An optical material is formed by adding together in a 20 ml vial, 2.52 grains of the host material including spacer beads (prepared substantially in accordance with the procedure described in Example 1 C), 0.99 grams of the optical material of Example I B and 1.00 grams of the optical material of Example IA. The mixture was stirred using a Vortex mixer followed by sonification in an ultrasonic bath for approximately 50 minutes.
  • Sample material from the combination vial is dispensed onto a Hexagon shaped flat Borosilicate glass which was previously cleaned using a caustic base bath, acid rinse, deionized water rinse, and a methanol wipe.
  • a second Hexagon plate of the same size also previously cleaned is placed on top of the dispensed sample material and the sandwiched structure is massaged to spread the formulation evenly between the two glass plates.
  • Excess formulation which squeezed out of the structure is wiped off of the outer portion of the glass and the Hexagon sandwich is cured in a 5000-EC UV Light Curing Flood Lamp from DYMAX Corporation system with an H-bulb (30-45 milliWatts/cm 2 ) for 10 seconds.
  • the thickness of the nanocrystal containing layer is approximately 70-79 ⁇ m (approximately 360 ing of formulation).
  • the Hexagon sandwich consisting of two Hexagon shaped flat plates of Borosilicate glass with cured layer of acrylic containing a sample of the optical material prepared substantially as described in Example 6.
  • Example 1 Six samples (Samples A-F) were prepared substantially as described in Example 2. Initial CCT, CRI, and External Quantum Efficiency measurements were taken for each sample prior to heating each sample to approximately 50 0 C and irradiating the sample to approximately 30 mW/cm2 of 450 nm blue light for the time specified in following Table 1 for each of the samples. CCT, CRl, and EQE measurements were taken after the irradiation time listed for the respective sample. The data is set forth in the following Table 1 , Table 1
  • Dimethyl cadmium, diethyl zinc, and hexamethyldisilathiane are used as the Cd, Zn, and S precursors, respectively.
  • the Cd and Zn are mixed in equimolar ratios while the S is in two-fold excess relative to the Cd and Zn.
  • the Cd/Zn (6.13 mmol of dimethylcadmium and diethylzinc) and S (24.53 mmol of hexamethyldisilathiane) samples are each dissolved in 80 mL of trioctylphosphine inside a nitrogen atmosphere glove box. Once the precursor solutions are prepared, the reaction flask is heated to 155 0 C under nitrogen.
  • the precursor solutions are added dropwise over the course of 2 hours at 155 0 C using a syringe pump.
  • the nanocrystals are transferred to a nitrogen atmosphere giovebox and precipitated out of the growth solution by adding a 3 : 1 mixture of methanol and isopropanol.
  • the isolated core-shell nanocrystals are then dissolved in toluene and used to make optical materials.
  • the Semiconductor nanocrystals prepared substantially in accordance with the synthesis described in Example 3 comprise red-emitting semiconductor nanocrystals dispersed in Toluene have a (add space) peak emission at 604 nm, a FWHM of about 29 nm, a solution quantum yield of 85% and a concentration of 18 mg/ml.
  • 30.6 ml of the 18 mg/ml suspension of the red-emitting nanocrystals in toluene is added from a 10 mL syringe to a 125 ml septum capped Erlenmeyer flask including a magnetic stirrer bar; the system is closed and purged through a syringe needle under vacuum then backfilled with nitrogen multiple times prior to insertion of the suspension.
  • DR- 150 is a UV-curable acrylic formulation commercially available from Radcure.
  • TiO 2 0.270 gram TiO 2 (Ti-Pure 902+ available from DuPont) is next added to the open Erlenmeyer flask and the mixture is mixed with a Vortex mixer followed by mixing with an homogenizer. Approximately 0.2 grams of Tego 2500 is added dropwise and the solution mixed with a Vortex mixer followed by an additional 45 minutes in the ultrasonic bath. Care is taken to avoid temperatures over 40 0 C white the sample is in the ultrasonic bath.
  • the sample is stored in the dark until used to make an optical component.
  • Optical Component comprising glass/optical material/glass
  • Microscope slides are pre-cleaned using acetone followed by a methanol wipe.
  • Two 80 micron shims are positioned at the corners of one end of the microscope slide and approximately one inch from that end, ⁇ small amount of Formulation described in example 4 A is placed in the center of the area framed by the shims.
  • a second microscope slide or piece of microscope slide is placed on top of the formulation, positioned such that the edges contact portions of the spacing shims.
  • Small mini binder clips are positioned over the shims to hold the two pieces of glass together, care is taken to avoid shading the formulation with the clips.
  • This structure is cured in a 5000-EC UV Light Curing Flood Lamp from DYMAX Corporation system with an H-bulb (30-45 mW/cm 2 ) for 10 seconds on each side.
  • the clips are removed and the shim stock pulled out of the structure.
  • the samples are then irradiated by a 450 nm light flux of approximately 25 mW/cm2 at 50 C for the time indicated in Table 2.
  • EQE measurements are made in a 12" integrating sphere using a NIST traceable calibrated light source.
  • Optical Component comprising glass/optical material/acrylate/glass
  • Optical components can also be made sequentially, As an example, the optical material described in example 4A is coated onto a pre-cleaned microscope slide using a Mayer rod 52 yielding approximately 80 um film. This film is cured in an air environment using a 5000-EC UV Light Curing Flood Lamp from DYMAX Corporation system with an H-bulb such that the sample is exposed to energy of approximately 865 mJ/cm2.
  • Formation of a sealant layer over of the optical material and first substrate is effected by dispensing a sufficient quantity of a UV cure liquid acrylate based material on the cured optical material film such that when a mating glass slide is positioned on top of the structure, the acrylate based liquid covers the majority of the optical material film and preferably beads-up on the edge of the slides.
  • the acrylate based liquid contained between the top microscope slide and the base microscope slide containing the cured optical component film is then cured in an air environment using a 5000-EC UV Light Curing Flood Lamp from DYMAX Corporation system with an H-bulb such that the sample is exposed to energy of approximately 865 mJ/cm2,
  • EQE External Quantum Efficiency
  • Semiconductor nanocrystals having a peak emission at 61 1 nm, a FWHM of about 33 nm, a solution quantum yield of 71% were used.
  • the semiconductor nanocrystals used were a mixture of semiconductor nanocrystals from 4 separately prepared batches. (Two of the batches were prepared generally following the procedure described in Example 3 A ; the other two were prepared using the same general procedure, but on a larger scale.)
  • the nanocrystals were dispersed in toluene at a concentration of 20 mg/mt.
  • Tego RAD2500 surfactant 4.63 grains of Tego RAD2500 surfactant is added to the open flask, followed by the addition of .1.97 grams TiO 2 (Ti-Pure 902+ available from DuPont) and the mixture is mixed with a rotor stator homogenizer (a product of IKA Labortechnik, model Ultra-Turrax T-25).
  • the flask containing the mixture is then put in an ultrasonic bath for 20 minutes. Care is taken to avoid temperatures over 40 0 C while the sample is in the ultrasonic bath. The sample was stored in the dark until used for the following process..
  • An optical component was prepared by screen-printing approx. a film of optical material ink prepared substantially as described in Example 5A (above) onto each of two separate pre- cleaned glass plates.
  • the ink is printed in air.
  • the ink on the two plates is cured by exposure to 2 Dymax Fusion H-bulbs at about 50 milliwatts/cm 2 for about 30 seconds.
  • the weight of cured ink film on each plate is approx. 0.2269 gram,
  • the curing step is carried out under a blanket of nitrogen. After curing, the plates are returned to air. Next, an amount of optically clear adhesive material is dispensed upon the cured optical materia! on one of the two plates.

Landscapes

  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • General Engineering & Computer Science (AREA)
  • Dispersion Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Luminescent Compositions (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)
  • Optical Filters (AREA)
PCT/US2010/032799 2009-04-28 2010-04-28 Optical materials, optical, components, devices, and methods Ceased WO2010129350A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US13/283,399 US9466757B2 (en) 2009-04-28 2011-10-27 Optical materials, optical components, devices, and methods
US15/289,624 US20170121602A1 (en) 2009-04-28 2016-10-10 Optical materials, optical components, devices, and methods

Applications Claiming Priority (12)

Application Number Priority Date Filing Date Title
US17337509P 2009-04-28 2009-04-28
US61/173,375 2009-04-28
US17543009P 2009-05-04 2009-05-04
US17545609P 2009-05-04 2009-05-04
US61/175,430 2009-05-04
US61/175,456 2009-05-04
PCT/US2009/002789 WO2009151515A1 (en) 2008-05-06 2009-05-06 Solid state lighting devices including quantum confined semiconductor nanoparticles
USPCT/US2009/002789 2009-05-06
US25265709P 2009-10-17 2009-10-17
US61/252,657 2009-10-17
US25274909P 2009-10-19 2009-10-19
US61/252,749 2009-10-19

Related Parent Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2009/002789 Continuation-In-Part WO2009151515A1 (en) 2008-05-06 2009-05-06 Solid state lighting devices including quantum confined semiconductor nanoparticles
PCT/US2010/032799 Continuation WO2010129350A2 (en) 2009-04-28 2010-04-28 Optical materials, optical, components, devices, and methods

Related Child Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2010/032799 Continuation WO2010129350A2 (en) 2009-04-28 2010-04-28 Optical materials, optical, components, devices, and methods
US13/283,399 Continuation US9466757B2 (en) 2009-04-28 2011-10-27 Optical materials, optical components, devices, and methods

Publications (2)

Publication Number Publication Date
WO2010129350A2 true WO2010129350A2 (en) 2010-11-11
WO2010129350A3 WO2010129350A3 (en) 2011-03-31

Family

ID=43050762

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/US2010/032859 Ceased WO2010129374A2 (en) 2009-04-28 2010-04-28 Optical materials, optical components, and methods
PCT/US2010/032799 Ceased WO2010129350A2 (en) 2009-04-28 2010-04-28 Optical materials, optical, components, devices, and methods

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/US2010/032859 Ceased WO2010129374A2 (en) 2009-04-28 2010-04-28 Optical materials, optical components, and methods

Country Status (6)

Country Link
US (4) US9466757B2 (enExample)
EP (1) EP2424814A4 (enExample)
JP (1) JP5710597B2 (enExample)
KR (1) KR101753740B1 (enExample)
CN (1) CN102803129B (enExample)
WO (2) WO2010129374A2 (enExample)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
EP2732316A4 (en) * 2011-07-14 2015-06-10 Lg Innotek Co Ltd OPTICAL ELEMENT, DISPLAY DEVICE THEREFOR AND METHOD OF MANUFACTURING THEREOF
US9136426B2 (en) 2011-05-11 2015-09-15 Qd Vision, Inc. Method for processing devices including quantum dots and devices
US9133388B2 (en) 2009-04-28 2015-09-15 Qd Vision, Inc. Optical materials, optical components, and methods
US9496141B2 (en) 2009-11-11 2016-11-15 Qd Vision, Inc. Device including quantum dots
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
US9701896B2 (en) 2011-11-22 2017-07-11 Samsung Electronics Co., Ltd. Quantum dot-containing compositions including an emission stabilizer, products including same, and method
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
US9929325B2 (en) 2012-06-05 2018-03-27 Samsung Electronics Co., Ltd. Lighting device including quantum dots
US10000015B2 (en) 2013-11-19 2018-06-19 Samsung Electronics Co., Ltd. Methods for making optical components, optical components, and products including same
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
US10221354B2 (en) 2013-11-19 2019-03-05 Samsung Electronics Co., Ltd. Luminescent particle, materials and products including same, and methods
US10236410B2 (en) 2012-02-05 2019-03-19 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, methods for making same, compositions, and products
US10734546B2 (en) 2011-11-22 2020-08-04 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2297762B1 (en) 2008-05-06 2017-03-15 Samsung Electronics Co., Ltd. Solid state lighting devices including quantum confined semiconductor nanoparticles
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US10173454B2 (en) * 2009-02-17 2019-01-08 Bundesdruckerei Gmbh Security and/or value document having a type II semiconductor contact system
EP2465147B1 (en) 2009-08-14 2019-02-27 Samsung Electronics Co., Ltd. Lighting devices, an optical component for a lighting device, and methods
WO2011047385A1 (en) 2009-10-17 2011-04-21 Qd Vision, Inc. An optical, component, products including same, and methods for making same
EP2655961A4 (en) 2010-12-23 2014-09-03 Qd Vision Inc OPTICAL ELEMENT WITH QUANTUM POINTS
WO2013078249A1 (en) 2011-11-22 2013-05-30 Qd Vision Inc. Method of making quantum dots
WO2013078242A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Methods for coating semiconductor nanocrystals
US9864121B2 (en) 2011-11-22 2018-01-09 Samsung Electronics Co., Ltd. Stress-resistant component for use with quantum dots
WO2013078245A1 (en) 2011-11-22 2013-05-30 Qd Vision, Inc. Method of making quantum dots
RU2623960C2 (ru) 2012-01-03 2017-06-29 Филипс Лайтинг Холдинг Б.В. Цветонастраиваемый осветительный узел, источник света и осветительный прибор
JP6418948B2 (ja) * 2012-01-25 2018-11-07 ジェネラル ハイドロポニックス, インコーポレイテッドGeneral Hydroponics, Inc. 光合成有効放射を最適化するための組成物、デバイスおよび方法
WO2013123390A1 (en) 2012-02-16 2013-08-22 Qd Vision, Inc. Method for preparing semiconductor nanocrystals
WO2013173409A1 (en) 2012-05-15 2013-11-21 Qd Vision, Inc. Semiconductor nanocrystals and methods of preparation
US20140027673A1 (en) * 2012-07-25 2014-01-30 Qd Vision, Inc. Method of making components including quantum dots, methods, and products
CN105637267B (zh) 2013-08-16 2018-11-13 三星电子株式会社 用于制造光学部件的方法、光学部件及包括其的产品
KR102314403B1 (ko) * 2014-11-14 2021-10-19 삼성디스플레이 주식회사 표시 장치 및 그 제조방법
CA3015622A1 (en) * 2016-02-26 2017-08-31 Nanosys, Inc. Low cadmium content nanostructure compositions and uses thereof
CN108069710A (zh) 2016-11-15 2018-05-25 深圳市光峰光电技术有限公司 一种发光陶瓷及发光装置
US11691909B2 (en) * 2016-11-30 2023-07-04 Corning Incorporated Textured glass for light extraction enhancement of OLED lighting
WO2019072884A1 (en) * 2017-10-13 2019-04-18 Merck Patent Gmbh SEMICONDUCTOR ELECTROLUMINESCENT NANOPARTICLE
CN115678542B (zh) 2019-06-20 2024-12-31 昭荣化学工业株式会社 基于亮银的四元纳米结构
KR102858281B1 (ko) * 2019-11-22 2025-09-11 삼성디스플레이 주식회사 발광 소자, 표시 장치 및 이의 제조 방법
CN112939578B (zh) * 2019-11-26 2023-07-18 深圳市中光工业技术研究院 荧光陶瓷及其制备方法、发光装置以及投影装置
KR102737424B1 (ko) * 2020-03-30 2024-12-02 동우 화인켐 주식회사 광변환 잉크 조성물, 컬러필터 및 화상표시장치
US11407940B2 (en) 2020-12-22 2022-08-09 Nanosys, Inc. Films comprising bright silver based quaternary nanostructures
US11926776B2 (en) 2020-12-22 2024-03-12 Shoei Chemical Inc. Films comprising bright silver based quaternary nanostructures
MX2023008063A (es) 2021-01-05 2023-07-17 Becton Dickinson Co Cono de aguja para dispositivo de administracion de farmacos.
US11360250B1 (en) 2021-04-01 2022-06-14 Nanosys, Inc. Stable AIGS films
KR20240053281A (ko) * 2022-10-17 2024-04-24 삼성전자주식회사 솔더 리플로우 시스템 및 이를 이용한 솔더 리플로우 방법

Family Cites Families (177)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4075037A (en) 1976-05-17 1978-02-21 Westinghouse Electric Corporation Tailoring of recovery charge in power diodes and thyristors by irradiation
JPS5819125B2 (ja) 1976-08-11 1983-04-16 株式会社日立製作所 半導体装置の製造方法
US6048616A (en) 1993-04-21 2000-04-11 Philips Electronics N.A. Corp. Encapsulated quantum sized doped semiconductor particles and method of manufacturing same
US5557436A (en) 1994-05-12 1996-09-17 Magnascreen Corporation Thin seal liquid crystal display and method of making same
JPH0950057A (ja) 1995-05-31 1997-02-18 Mitsui Toatsu Chem Inc 半導体超微粒子含有ポリマー粒子
JP3319945B2 (ja) 1996-05-13 2002-09-03 株式会社エンプラス 面光源装置
TW383508B (en) 1996-07-29 2000-03-01 Nichia Kagaku Kogyo Kk Light emitting device and display
US6505929B1 (en) 1996-09-09 2003-01-14 Hewlett-Packard Company Pigment treatment in paper coating compositions for improving ink-jet printing performance
US6613247B1 (en) 1996-09-20 2003-09-02 Osram Opto Semiconductors Gmbh Wavelength-converting casting composition and white light-emitting semiconductor component
US6473554B1 (en) 1996-12-12 2002-10-29 Teledyne Lighting And Display Products, Inc. Lighting apparatus having low profile
US6495624B1 (en) 1997-02-03 2002-12-17 Cytonix Corporation Hydrophobic coating compositions, articles coated with said compositions, and processes for manufacturing same
US6259506B1 (en) 1997-02-18 2001-07-10 Spectra Science Corporation Field activated security articles including polymer dispersed liquid crystals, and including micro-encapsulated field affected materials
US6322901B1 (en) 1997-11-13 2001-11-27 Massachusetts Institute Of Technology Highly luminescent color-selective nano-crystalline materials
US6501091B1 (en) 1998-04-01 2002-12-31 Massachusetts Institute Of Technology Quantum dot white and colored light emitting diodes
JP4404489B2 (ja) * 1998-09-18 2010-01-27 マサチューセッツ インスティテュート オブ テクノロジー 水溶性蛍光半導体ナノ結晶
JP4425470B2 (ja) 1998-09-18 2010-03-03 マサチューセッツ インスティテュート オブ テクノロジー 半導体ナノ結晶の生物学的用途
US6251303B1 (en) 1998-09-18 2001-06-26 Massachusetts Institute Of Technology Water-soluble fluorescent nanocrystals
JP2000104058A (ja) 1998-09-28 2000-04-11 Sony Corp 発光体の製造方法
US6576155B1 (en) 1998-11-10 2003-06-10 Biocrystal, Ltd. Fluorescent ink compositions comprising functionalized fluorescent nanocrystals
US6114038A (en) 1998-11-10 2000-09-05 Biocrystal Ltd. Functionalized nanocrystals and their use in detection systems
US6205263B1 (en) 1999-06-16 2001-03-20 Intelligent Optical Systems Distributed optical fiber sensor with controlled response
US20070164661A1 (en) 1999-07-26 2007-07-19 Idemitsu Kosan Co., Ltd. Fluorescent conversion medium and color light emitting device
EP1264353A2 (en) 2000-03-06 2002-12-11 Teledyne Lighting and Display Products, Inc. Lighting apparatus having quantum dot layer
US6801270B2 (en) 2000-06-26 2004-10-05 Reveo, Inc. Backlight for a liquid crystal display having high light-recycling efficiency
IL138471A0 (en) 2000-09-14 2001-10-31 Yissum Res Dev Co Novel semiconductor materials and their uses
JP2002091352A (ja) 2000-09-19 2002-03-27 Rhythm Watch Co Ltd 表示装置
US6939604B1 (en) 2000-10-19 2005-09-06 Arch Development Corporation Doped semiconductor nanocrystals
US6576291B2 (en) 2000-12-08 2003-06-10 Massachusetts Institute Of Technology Preparation of nanocrystallites
US6881447B2 (en) * 2002-04-04 2005-04-19 Dielectric Systems, Inc. Chemically and electrically stabilized polymer films
US20020127224A1 (en) 2001-03-02 2002-09-12 James Chen Use of photoluminescent nanoparticles for photodynamic therapy
JP4213876B2 (ja) 2001-04-13 2009-01-21 富士フイルム株式会社 感光性組成物及びネガ型平版印刷版
DE10120856A1 (de) 2001-04-27 2002-10-31 Merck Patent Gmbh Pigmentpräparation
US7008559B2 (en) 2001-06-06 2006-03-07 Nomadics, Inc. Manganese doped upconversion luminescence nanoparticles
US20020186921A1 (en) 2001-06-06 2002-12-12 Schumacher Lynn C. Multiwavelength optical fiber devices
US6595630B2 (en) 2001-07-12 2003-07-22 Eastman Kodak Company Method and apparatus for controlling depth of deposition of a solvent free functional material in a receiver
US6819845B2 (en) 2001-08-02 2004-11-16 Ultradots, Inc. Optical devices with engineered nonlinear nanocomposite materials
US20030066998A1 (en) * 2001-08-02 2003-04-10 Lee Howard Wing Hoon Quantum dots of Group IV semiconductor materials
US6710366B1 (en) 2001-08-02 2004-03-23 Ultradots, Inc. Nanocomposite materials with engineered properties
US6734465B1 (en) 2001-11-19 2004-05-11 Nanocrystals Technology Lp Nanocrystalline based phosphors and photonic structures for solid state lighting
US20030194578A1 (en) 2001-12-20 2003-10-16 Honeywell International, Inc. Security articles comprising multi-responsive physical colorants
US7153015B2 (en) 2001-12-31 2006-12-26 Innovations In Optics, Inc. Led white light optical system
US20040007169A1 (en) 2002-01-28 2004-01-15 Mitsubishi Chemical Corporation Semiconductor nanoparticles and thin film containing the same
US6876796B2 (en) 2002-01-30 2005-04-05 Photon-X, Llc Nanocomposite microresonators
JP3701622B2 (ja) * 2002-03-27 2005-10-05 日立ソフトウエアエンジニアリング株式会社 半導体ナノ粒子蛍光試薬及び蛍光測定方法
EP2902464B1 (en) 2002-03-29 2019-09-18 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US7168833B2 (en) 2002-04-05 2007-01-30 General Electric Company Automotive headlamps with improved beam chromaticity
FR2838241B1 (fr) * 2002-04-09 2004-06-25 Commissariat Energie Atomique Materiaux luminescents constitues de nanocristaux a structure coeur/coquille et leur procede de preparation
US7129091B2 (en) 2002-05-09 2006-10-31 University Of Chicago Device and method for pressure-driven plug transport and reaction
AU2003231419A1 (en) * 2002-06-19 2004-01-06 National Institute Of Advanced Industrial Science And Technology Semiconductor superfine particle phosphor and light emitting device
WO2004005587A2 (en) 2002-07-08 2004-01-15 The Regents Of The University Of California Surface nanopatterning
US6957608B1 (en) 2002-08-02 2005-10-25 Kovio, Inc. Contact print methods
DE60335001D1 (de) 2002-08-13 2010-12-30 Massachusetts Inst Technology Halbleiter-nanokristallheterostrukturen
AU2003301769A1 (en) 2002-08-15 2004-06-07 Moungi G. Bawendi Stabilized semiconductor nanocrystals
WO2004023527A2 (en) 2002-09-05 2004-03-18 Nanosys, Inc. Nanostructure and nanocomposite based compositions and photovoltaic devices
US7534488B2 (en) 2003-09-10 2009-05-19 The Regents Of The University Of California Graded core/shell semiconductor nanorods and nanorod barcodes
JP4822150B2 (ja) 2002-12-16 2011-11-24 独立行政法人科学技術振興機構 不均一な量子ドットを有する半導体積層構造、それを用いた発光ダイオード、半導体レーザダイオード及び半導体光増幅器並びにそれらの製造方法
US7091653B2 (en) 2003-01-27 2006-08-15 3M Innovative Properties Company Phosphor based light sources having a non-planar long pass reflector
US7279832B2 (en) * 2003-04-01 2007-10-09 Innovalight, Inc. Phosphor materials and illumination devices made therefrom
US20040247837A1 (en) 2003-06-09 2004-12-09 Howard Enlow Multilayer film
JP4143920B2 (ja) 2003-07-17 2008-09-03 三菱電機株式会社 面光源装置およびこれを用いた表示装置
DE10340964A1 (de) 2003-09-05 2005-03-31 Leica Microsystems Heidelberg Gmbh Lichtquelle mit einem mikrostrukturierten optischen Element
US7065285B2 (en) 2003-12-01 2006-06-20 Lucent Technologies Inc. Polymeric compositions comprising quantum dots, optical devices comprising these compositions and methods for preparing same
FR2862955B1 (fr) 2003-12-02 2006-03-10 Commissariat Energie Atomique Nanocristaux inorganiques a couche de revetement organique, leur procede de preparation, et materiaux constitues par ceux-ci.
US7667766B2 (en) * 2003-12-18 2010-02-23 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Adjustable spectrum flash lighting for image acquisition
US7102152B2 (en) 2004-10-14 2006-09-05 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for emitting output light using quantum dots and non-quantum fluorescent material
US7318651B2 (en) 2003-12-18 2008-01-15 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Flash module with quantum dot light conversion
EP1733077B1 (en) 2004-01-15 2018-04-18 Samsung Electronics Co., Ltd. Nanocrystal doped matrixes
JP4653662B2 (ja) * 2004-01-26 2011-03-16 京セラ株式会社 波長変換器、発光装置、波長変換器の製造方法および発光装置の製造方法
US7253452B2 (en) * 2004-03-08 2007-08-07 Massachusetts Institute Of Technology Blue light emitting semiconductor nanocrystal materials
WO2005103202A2 (en) 2004-03-31 2005-11-03 Solaris Nanosciences, Inc. Anisotropic nanoparticles and anisotropic nanostructures and pixels, displays and inks using them
GB0408347D0 (en) 2004-04-15 2004-05-19 Design Led Products Ltd Light guide device
US7326908B2 (en) 2004-04-19 2008-02-05 Edward Sargent Optically-regulated optical emission using colloidal quantum dot nanocrystals
US7391060B2 (en) 2004-04-27 2008-06-24 Matsushita Electric Industrial Co., Ltd. Phosphor composition and method for producing the same, and light-emitting device using the same
US7837348B2 (en) 2004-05-05 2010-11-23 Rensselaer Polytechnic Institute Lighting system using multiple colored light emitting sources and diffuser element
US7968273B2 (en) * 2004-06-08 2011-06-28 Nanosys, Inc. Methods and devices for forming nanostructure monolayers and devices including such monolayers
US7655479B2 (en) 2004-06-30 2010-02-02 University Of South Florida Luminescence characterization of quantum dots conjugated with biomarkers for early cancer detection
US20070045777A1 (en) 2004-07-08 2007-03-01 Jennifer Gillies Micronized semiconductor nanocrystal complexes and methods of making and using same
US7405002B2 (en) 2004-08-04 2008-07-29 Agency For Science, Technology And Research Coated water-soluble nanoparticles comprising semiconductor core and silica coating
JP4468110B2 (ja) 2004-08-20 2010-05-26 有限会社クリオテック 発光用エレメント、これを備えた発光装置および表示装置
JP2006073202A (ja) 2004-08-31 2006-03-16 Nichia Chem Ind Ltd 発光装置
US20080296534A1 (en) * 2004-09-09 2008-12-04 Technion Research And Development Foundation Ltd. Core-Alloyed Shell Semiconductor Nanocrystals
JP2006083219A (ja) 2004-09-14 2006-03-30 Sharp Corp 蛍光体およびこれを用いた発光装置
US7312007B2 (en) 2004-09-16 2007-12-25 Xerox Corporation Photoconductive imaging members
US8480566B2 (en) 2004-09-24 2013-07-09 Vivid Medical, Inc. Solid state illumination for endoscopy
US7144131B2 (en) 2004-09-29 2006-12-05 Advanced Optical Technologies, Llc Optical system using LED coupled with phosphor-doped reflective materials
JP4383996B2 (ja) * 2004-09-29 2009-12-16 株式会社東芝 屈折率変化装置および屈折率変化方法
US10225906B2 (en) 2004-10-22 2019-03-05 Massachusetts Institute Of Technology Light emitting device including semiconductor nanocrystals
US7314770B2 (en) 2004-11-18 2008-01-01 3M Innovative Properties Company Method of making light emitting device with silicon-containing encapsulant
US7481562B2 (en) 2004-11-18 2009-01-27 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Device and method for providing illuminating light using quantum dots
KR100735148B1 (ko) 2004-11-22 2007-07-03 (주)케이디티 백라이트 장치용 광 여기 확산시트, 이를 이용한액정표시용 백라이트 장치
KR20060079724A (ko) 2005-01-03 2006-07-06 삼성전자주식회사 암부를 제거한 백라이트 어셈블리 및 이를 구비한평판표시장치
KR100678285B1 (ko) * 2005-01-20 2007-02-02 삼성전자주식회사 발광 다이오드용 양자점 형광체 및 그의 제조방법
US8232722B2 (en) 2005-02-16 2012-07-31 Massachusetts Institute Of Technology Light emitting devices including semiconductor nanocrystals
CN101133684A (zh) 2005-03-22 2008-02-27 出光兴产株式会社 色变换基板及其制造方法以及发光装置
JP4716168B2 (ja) 2005-03-29 2011-07-06 富士電機株式会社 フルカラー有機ｅｌ表示装置の製造方法及びその製造用の光処理装置
JP2006291064A (ja) 2005-04-12 2006-10-26 Seiko Instruments Inc 蛍光体フィルム、照明装置、及び、これを有する表示装置
US9070884B2 (en) 2005-04-13 2015-06-30 Universal Display Corporation Hybrid OLED having phosphorescent and fluorescent emitters
AU2006242541B2 (en) 2005-04-29 2011-12-08 Board Of Regents Of The University Of Oklahoma Inhibition of reactive oxygen species and protection of mammalian cells
KR100682874B1 (ko) 2005-05-02 2007-02-15 삼성전기주식회사 백색 ｌｅｄ
KR20080007247A (ko) 2005-05-12 2008-01-17 이데미쓰 고산 가부시키가이샤 색 변환 재료 조성물 및 이것을 포함하는 색 변환 매체
US8718437B2 (en) 2006-03-07 2014-05-06 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
WO2009002512A1 (en) * 2007-06-25 2008-12-31 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US9297092B2 (en) 2005-06-05 2016-03-29 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
US8845927B2 (en) 2006-06-02 2014-09-30 Qd Vision, Inc. Functionalized nanoparticles and method
WO2009035657A1 (en) * 2007-09-12 2009-03-19 Qd Vision, Inc. Functionalized nanoparticles and method
BRPI0613822A2 (pt) 2005-06-23 2011-02-15 Rensselaer Polytech Inst método e fonte de luz de largura de faixa ampla para a produção de luz visìvel e que tem um valor de cromaticidade próximo de um locus de corpo negro e um ìndice de renderização de cor de mais de aproximadamente 80 e fonte de luz de largura de faixa ampla
US7294861B2 (en) 2005-06-30 2007-11-13 3M Innovative Properties Company Phosphor tape article
WO2007009010A2 (en) 2005-07-13 2007-01-18 Evident Technologies, Inc. Light emitting diode comprising semiconductor nanocrystal complexes and powdered phosphors
JP2007073206A (ja) 2005-09-02 2007-03-22 Nidec Sankyo Corp Ｌｅｄ光源装置、照明装置及び表示装置
JP4699158B2 (ja) 2005-09-30 2011-06-08 大日本印刷株式会社 色変換層形成用塗工液
JP2007103513A (ja) * 2005-09-30 2007-04-19 Kyocera Corp 発光装置
TWI344314B (en) 2005-10-14 2011-06-21 Hon Hai Prec Ind Co Ltd Light-emitting element, plane light source and direct-type backlight module
JP2007123390A (ja) * 2005-10-26 2007-05-17 Kyocera Corp 発光装置
JP2007157831A (ja) 2005-12-01 2007-06-21 Sharp Corp 発光装置
US8337721B2 (en) 2005-12-02 2012-12-25 Vanderbilt University Broad-emission nanocrystals and methods of making and using same
US8849087B2 (en) 2006-03-07 2014-09-30 Qd Vision, Inc. Compositions, optical component, system including an optical component, devices, and other products
EP2041478B1 (en) 2006-03-07 2014-08-06 QD Vision, Inc. An article including semiconductor nanocrystals
WO2007143197A2 (en) 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US7524746B2 (en) 2006-03-13 2009-04-28 Evident Technologies, Inc. High-refractive index materials comprising semiconductor nanocrystal compositions, methods of making same, and applications therefor
US20080038558A1 (en) * 2006-04-05 2008-02-14 Evident Technologies, Inc. I-iii-vi semiconductor nanocrystals, i-iii-vi water stable semiconductor nanocrystals, and methods of making same
WO2007117668A2 (en) 2006-04-07 2007-10-18 Qd Vision, Inc. Methods and articles including nanomaterial
KR100783251B1 (ko) 2006-04-10 2007-12-06 삼성전기주식회사 양자점을 이용한 다층 구조 백색 발광 다이오드 및 그의제조방법
WO2007120877A2 (en) 2006-04-14 2007-10-25 Qd Vision, Inc. Transfer surface for manufacturing a light emitting device
US20080173886A1 (en) 2006-05-11 2008-07-24 Evident Technologies, Inc. Solid state lighting devices comprising quantum dots
US7706660B2 (en) 2006-05-19 2010-04-27 University Of Washington Multiple quantum dot waveguides
US8790459B2 (en) 2006-05-31 2014-07-29 Cabot Corporation Colored reflective features and inks and processes for making them
JPWO2007142203A1 (ja) 2006-06-05 2009-10-22 Hoya株式会社 量子ドット発光型無機ｅｌ素子
US7850777B2 (en) 2006-06-15 2010-12-14 Evident Technologies Method of preparing semiconductor nanocrystal compositions
WO2008105792A2 (en) 2006-06-24 2008-09-04 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, methods for fabricating an array of devices and compositions
WO2008108798A2 (en) 2006-06-24 2008-09-12 Qd Vision, Inc. Methods for depositing nanomaterial, methods for fabricating a device, and methods for fabricating an array of devices
JP2008041361A (ja) 2006-08-03 2008-02-21 Idemitsu Kosan Co Ltd 蛍光変換媒体及びそれを含むカラー発光装置
JP4751269B2 (ja) 2006-08-09 2011-08-17 セイコーインスツル株式会社 照明装置及びこれを備える表示装置、携帯電子機器
US7703942B2 (en) 2006-08-31 2010-04-27 Rensselaer Polytechnic Institute High-efficient light engines using light emitting diodes
GB2442505A (en) 2006-10-04 2008-04-09 Sharp Kk A display with a primary light source for illuminating a nanophosphor re-emission material
WO2008133660A2 (en) 2006-11-21 2008-11-06 Qd Vision, Inc. Nanocrystals including a group iiia element and a group va element, method, composition, device and other prodcucts
WO2008063657A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Light emitting devices and displays with improved performance
WO2008063658A2 (en) 2006-11-21 2008-05-29 Qd Vision, Inc. Semiconductor nanocrystals and compositions and devices including same
US7723744B2 (en) 2006-12-08 2010-05-25 Evident Technologies, Inc. Light-emitting device having semiconductor nanocrystal complexes
US7496259B2 (en) 2007-01-02 2009-02-24 University Of Washington Endoscope with optical fiber and fiber optics system
US7867328B2 (en) 2007-01-05 2011-01-11 Hewlett-Packard Development Company, L.P. Inkjet ink compositions and methods of making the same
US20100110728A1 (en) 2007-03-19 2010-05-06 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
US20080237540A1 (en) 2007-03-19 2008-10-02 Nanosys, Inc. Methods for encapsulating nanocrystals
US20100155749A1 (en) 2007-03-19 2010-06-24 Nanosys, Inc. Light-emitting diode (led) devices comprising nanocrystals
US8403531B2 (en) 2007-05-30 2013-03-26 Cree, Inc. Lighting device and method of lighting
US7999283B2 (en) 2007-06-14 2011-08-16 Cree, Inc. Encapsulant with scatterer to tailor spatial emission pattern and color uniformity in light emitting diodes
WO2009014590A2 (en) 2007-06-25 2009-01-29 Qd Vision, Inc. Compositions and methods including depositing nanomaterial
WO2009011922A1 (en) 2007-07-18 2009-01-22 Qd Vision, Inc. Quantum dot-based light sheets useful for solid-state lighting
WO2009014707A2 (en) 2007-07-23 2009-01-29 Qd Vision, Inc. Quantum dot light enhancement substrate and lighting device including same
US8098375B2 (en) 2007-08-06 2012-01-17 Lumencor, Inc. Light emitting diode illumination system
US8128249B2 (en) 2007-08-28 2012-03-06 Qd Vision, Inc. Apparatus for selectively backlighting a material
WO2009033021A2 (en) 2007-09-05 2009-03-12 Chroma Technology Corporation Light source with wavelength converting phosphor
JP2009087760A (ja) 2007-09-28 2009-04-23 Dainippon Printing Co Ltd エレクトロルミネッセンス素子の製造方法
US8076410B2 (en) 2007-10-04 2011-12-13 Nanosi Advanced Technologies, Inc. Luminescent silicon nanoparticle-polymer composites, composite wavelength converter and white LED
US8018139B2 (en) 2007-11-05 2011-09-13 Enertron, Inc. Light source and method of controlling light spectrum of an LED light engine
US20110031452A1 (en) 2007-11-28 2011-02-10 Todd Krauss Nanoparticles Having Continuous Photoluminescence
KR100996374B1 (ko) 2008-02-25 2010-11-24 한국과학기술연구원 광 여기 발광시트 및 그의 제조방법
US8637883B2 (en) 2008-03-19 2014-01-28 Cree, Inc. Low index spacer layer in LED devices
KR101458077B1 (ko) 2008-05-01 2014-11-04 삼성전자 주식회사 발광 소자 및 그의 제조방법
US9287469B2 (en) 2008-05-02 2016-03-15 Cree, Inc. Encapsulation for phosphor-converted white light emitting diode
EP2297762B1 (en) * 2008-05-06 2017-03-15 Samsung Electronics Co., Ltd. Solid state lighting devices including quantum confined semiconductor nanoparticles
US9207385B2 (en) 2008-05-06 2015-12-08 Qd Vision, Inc. Lighting systems and devices including same
WO2009137053A1 (en) 2008-05-06 2009-11-12 Qd Vision, Inc. Optical components, systems including an optical component, and devices
US8021008B2 (en) 2008-05-27 2011-09-20 Abl Ip Holding Llc Solid state lighting using quantum dots in a liquid
KR100982991B1 (ko) 2008-09-03 2010-09-17 삼성엘이디 주식회사 양자점 파장변환체, 양자점 파장변환체의 제조방법 및 양자점 파장변환체를 포함하는 발광장치
KR101577300B1 (ko) 2008-10-28 2015-12-15 삼성디스플레이 주식회사 양자점을 이용한 백색광 발광다이오드 구조 및 이를 포함하는 백라이트 어셈블리
US7834372B2 (en) 2008-12-16 2010-11-16 Jinhui Zhai High luminous flux warm white solid state lighting device
US8343575B2 (en) 2008-12-30 2013-01-01 Nanosys, Inc. Methods for encapsulating nanocrystals and resulting compositions
KR101631986B1 (ko) 2009-02-18 2016-06-21 삼성전자주식회사 도광판 및 이를 포함하는 디스플레이 장치
KR101753740B1 (ko) 2009-04-28 2017-07-04 삼성전자주식회사 광학 재료, 광학 부품 및 방법
US20100289044A1 (en) 2009-05-12 2010-11-18 Koninklijke Philips Electronics N.V. Wavelength conversion for producing white light from high power blue led
EP2465147B1 (en) 2009-08-14 2019-02-27 Samsung Electronics Co., Ltd. Lighting devices, an optical component for a lighting device, and methods
GB0916700D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
GB0916699D0 (en) 2009-09-23 2009-11-04 Nanoco Technologies Ltd Semiconductor nanoparticle-based materials
WO2011047385A1 (en) 2009-10-17 2011-04-21 Qd Vision, Inc. An optical, component, products including same, and methods for making same
WO2011060180A1 (en) 2009-11-11 2011-05-19 Qd Vision, Inc. Device including quantum dots
US8294168B2 (en) 2010-06-04 2012-10-23 Samsung Electronics Co., Ltd. Light source module using quantum dots, backlight unit employing the light source module, display apparatus, and illumination apparatus
KR20200039806A (ko) 2010-11-10 2020-04-16 나노시스, 인크. 양자 도트 필름들, 조명 디바이스들, 및 조명 방법들

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9874674B2 (en) 2006-03-07 2018-01-23 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
US10393940B2 (en) 2006-03-07 2019-08-27 Samsung Electronics Co., Ltd. Compositions, optical component, system including an optical component, devices, and other products
US8836212B2 (en) 2007-01-11 2014-09-16 Qd Vision, Inc. Light emissive printed article printed with quantum dot ink
US9133388B2 (en) 2009-04-28 2015-09-15 Qd Vision, Inc. Optical materials, optical components, and methods
US9466757B2 (en) 2009-04-28 2016-10-11 Qd Vision, Inc. Optical materials, optical components, devices, and methods
US9905724B2 (en) 2009-04-28 2018-02-27 Samsung Electronics Co., Ltd. Optical materials, optical components, and methods
US10056523B2 (en) 2009-11-11 2018-08-21 Samsung Research America, Inc. Device including quantum dots
US9496141B2 (en) 2009-11-11 2016-11-15 Qd Vision, Inc. Device including quantum dots
US9136426B2 (en) 2011-05-11 2015-09-15 Qd Vision, Inc. Method for processing devices including quantum dots and devices
US9594203B2 (en) 2011-07-14 2017-03-14 Lg Innotek Co., Ltd. Optical member, display device having the same and method for fabricating the same
EP2732316A4 (en) * 2011-07-14 2015-06-10 Lg Innotek Co Ltd OPTICAL ELEMENT, DISPLAY DEVICE THEREFOR AND METHOD OF MANUFACTURING THEREOF
US9701896B2 (en) 2011-11-22 2017-07-11 Samsung Electronics Co., Ltd. Quantum dot-containing compositions including an emission stabilizer, products including same, and method
US10008631B2 (en) 2011-11-22 2018-06-26 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
US10734546B2 (en) 2011-11-22 2020-08-04 Samsung Electronics Co., Ltd. Coated semiconductor nanocrystals and products including same
US10553750B2 (en) 2012-02-05 2020-02-04 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, methods for making same, compositions, and products
US10236410B2 (en) 2012-02-05 2019-03-19 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, methods for making same, compositions, and products
US9929325B2 (en) 2012-06-05 2018-03-27 Samsung Electronics Co., Ltd. Lighting device including quantum dots
US9890330B2 (en) 2013-03-15 2018-02-13 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, method for coating semiconductor nanocrystals, and products including same
US9617472B2 (en) 2013-03-15 2017-04-11 Samsung Electronics Co., Ltd. Semiconductor nanocrystals, a method for coating semiconductor nanocrystals, and products including same
US10000015B2 (en) 2013-11-19 2018-06-19 Samsung Electronics Co., Ltd. Methods for making optical components, optical components, and products including same
US10221354B2 (en) 2013-11-19 2019-03-05 Samsung Electronics Co., Ltd. Luminescent particle, materials and products including same, and methods

Also Published As

Publication number Publication date
EP2424814A4 (en) 2016-06-01
WO2010129350A3 (en) 2011-03-31
US9466757B2 (en) 2016-10-11
EP2424814A2 (en) 2012-03-07
CN102803129B (zh) 2016-08-03
US20120187367A1 (en) 2012-07-26
WO2010129374A3 (en) 2011-04-14
US9905724B2 (en) 2018-02-27
US20170121602A1 (en) 2017-05-04
WO2010129374A2 (en) 2010-11-11
US20120189791A1 (en) 2012-07-26
JP2012525717A (ja) 2012-10-22
KR20120061773A (ko) 2012-06-13
US9133388B2 (en) 2015-09-15
US20160072005A1 (en) 2016-03-10
CN102803129A (zh) 2012-11-28
KR101753740B1 (ko) 2017-07-04
JP5710597B2 (ja) 2015-04-30

Similar Documents

Publication Publication Date Title
US9905724B2 (en) Optical materials, optical components, and methods
US10145539B2 (en) Solid state lighting devices including quantum confined semiconductor nanoparticles, an optical component for a solid state lighting device, and methods
EP2465147B1 (en) Lighting devices, an optical component for a lighting device, and methods
KR101560846B1 (ko) 조성물, 광학 부품, 광학 부품을 포함하는 시스템, 소자 및 다른 제품
US8718437B2 (en) Compositions, optical component, system including an optical component, devices, and other products
US8849087B2 (en) Compositions, optical component, system including an optical component, devices, and other products
US9297092B2 (en) Compositions, optical component, system including an optical component, devices, and other products
WO2009137053A1 (en) Optical components, systems including an optical component, and devices
US10393940B2 (en) Compositions, optical component, system including an optical component, devices, and other products
WO2010014205A1 (en) Compositions, optical component, system including an optional component, devices, and other products
US20150086169A1 (en) Compositions, optical component, system including an optical component, devices, and other products

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 10772574

Country of ref document: EP

Kind code of ref document: A2

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 10772574

Country of ref document: EP

Kind code of ref document: A2