WO2010105585A8 - Substratbearbeitungsanlage und substratbearbeitungsverfahren - Google Patents

Substratbearbeitungsanlage und substratbearbeitungsverfahren Download PDF

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Publication number
WO2010105585A8
WO2010105585A8 PCT/DE2009/000383 DE2009000383W WO2010105585A8 WO 2010105585 A8 WO2010105585 A8 WO 2010105585A8 DE 2009000383 W DE2009000383 W DE 2009000383W WO 2010105585 A8 WO2010105585 A8 WO 2010105585A8
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WO
WIPO (PCT)
Prior art keywords
substrate
substrate processing
process chamber
plasma
processing system
Prior art date
Application number
PCT/DE2009/000383
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English (en)
French (fr)
Other versions
WO2010105585A1 (de
Inventor
Hermann Schlemm
Matthias Uhlig
Original Assignee
Roth & Rau Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Roth & Rau Ag filed Critical Roth & Rau Ag
Priority to PCT/DE2009/000383 priority Critical patent/WO2010105585A1/de
Priority to US13/055,745 priority patent/US20110124144A1/en
Priority to CN2009801132753A priority patent/CN102007565A/zh
Priority to JP2012500061A priority patent/JP2012521075A/ja
Priority to KR1020107021459A priority patent/KR20110138142A/ko
Priority to EP09775849A priority patent/EP2409313A1/de
Publication of WO2010105585A1 publication Critical patent/WO2010105585A1/de
Publication of WO2010105585A8 publication Critical patent/WO2010105585A8/de

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • ing And Chemical Polishing (AREA)

Abstract

Substratbearbeitungsanlage, welche wenigstens eine evakuierbare Prozesskammer (20) aufweist, in welche wenigstens ein Substratträger (30) mit wenigstens einem Substrat (40) einbringbar ist, und welche ein Plasmaerzeugungsmodul (50), wenigstens eine Gaszuführung (61) und wenigstens eine Gasabführung aufweist (62). Ferner ein Substratbearbeitungsverfahren, wobei in wenigstens eine evakuierbare Prozesskammer wenigstens ein Substratträger mit wenigstens einem Substrat eingebracht wird und in der Prozesskammer in einem Plasmaprozess durch ein Plasmaerzeugungsmodul in einem Gas oder einem Gasgemisch ein Plasma erzeugt und eine Beschichtung, Ätzung, Oberflächenmodifizierung und/oder Reinigung des Substrates vorgenommen wird. Es ist die Aufgabe der vorliegenden Erfindung stark oberflächentexturierte Substrate mit hohem Durchsatz und hoher Qualität isotrop zu ätzen. Die Aufgabe wird einerseits durch eine Substratbearbeitungsanlage der genannten Gattung gelöst, bei welcher in der Prozesskammer ein Dampfätzmodul (70) integriert ist. Die Aufgabe wird ferner durch ein Substratbearbeitungsverfahren der genannten Gattung gelöst, bei welchem in der Prozesskammer vor und/oder nach und/oder abwechselnd mit dem Plasmaprozess eine Dampfätzung des wenigstens einen Substrates durchgeführt wird.
PCT/DE2009/000383 2009-03-17 2009-03-17 Substratbearbeitungsanlage und substratbearbeitungsverfahren WO2010105585A1 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
PCT/DE2009/000383 WO2010105585A1 (de) 2009-03-17 2009-03-17 Substratbearbeitungsanlage und substratbearbeitungsverfahren
US13/055,745 US20110124144A1 (en) 2009-03-17 2009-03-17 Substrate processing system and substrate processing method
CN2009801132753A CN102007565A (zh) 2009-03-17 2009-03-17 基片处理系统和基片处理方法
JP2012500061A JP2012521075A (ja) 2009-03-17 2009-03-17 基板処理装置および基板処理方法
KR1020107021459A KR20110138142A (ko) 2009-03-17 2009-03-17 기판 처리 장치 및 기판 처리 방법
EP09775849A EP2409313A1 (de) 2009-03-17 2009-03-17 Substratbearbeitungsanlage und substratbearbeitungsverfahren

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/DE2009/000383 WO2010105585A1 (de) 2009-03-17 2009-03-17 Substratbearbeitungsanlage und substratbearbeitungsverfahren

Publications (2)

Publication Number Publication Date
WO2010105585A1 WO2010105585A1 (de) 2010-09-23
WO2010105585A8 true WO2010105585A8 (de) 2010-11-18

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PCT/DE2009/000383 WO2010105585A1 (de) 2009-03-17 2009-03-17 Substratbearbeitungsanlage und substratbearbeitungsverfahren

Country Status (6)

Country Link
US (1) US20110124144A1 (de)
EP (1) EP2409313A1 (de)
JP (1) JP2012521075A (de)
KR (1) KR20110138142A (de)
CN (1) CN102007565A (de)
WO (1) WO2010105585A1 (de)

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JP2012521075A (ja) 2012-09-10
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WO2010105585A1 (de) 2010-09-23
US20110124144A1 (en) 2011-05-26
EP2409313A1 (de) 2012-01-25

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