WO2010068699A3 - Interconnexion de puce semi-conductrice formée par application aérosol de matériau électriquement conducteur - Google Patents

Interconnexion de puce semi-conductrice formée par application aérosol de matériau électriquement conducteur Download PDF

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Publication number
WO2010068699A3
WO2010068699A3 PCT/US2009/067386 US2009067386W WO2010068699A3 WO 2010068699 A3 WO2010068699 A3 WO 2010068699A3 US 2009067386 W US2009067386 W US 2009067386W WO 2010068699 A3 WO2010068699 A3 WO 2010068699A3
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WIPO (PCT)
Prior art keywords
die
conductive material
electrically conductive
semiconductor die
die interconnect
Prior art date
Application number
PCT/US2009/067386
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English (en)
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WO2010068699A2 (fr
Inventor
Jeffrey S. Leal
Scott Mcgrath
Suzette Pangrle
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Vertical Circuits, Inc.
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Publication date
Application filed by Vertical Circuits, Inc. filed Critical Vertical Circuits, Inc.
Priority to JP2011540873A priority Critical patent/JP5631328B2/ja
Priority to CN2009801492852A priority patent/CN102246298A/zh
Publication of WO2010068699A2 publication Critical patent/WO2010068699A2/fr
Publication of WO2010068699A3 publication Critical patent/WO2010068699A3/fr

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    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01047Silver [Ag]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01074Tungsten [W]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01075Rhenium [Re]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10Details of semiconductor or other solid state devices to be connected
    • H01L2924/11Device type
    • H01L2924/14Integrated circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/35Mechanical effects
    • H01L2924/351Thermal stress

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

La présente invention concerne une borne d'interconnexion qui est formée sur une puce semi-conductrice en appliquant un matériau électriquement conducteur sous forme d'aérosol, par exemple par impression à jet d'aérosol. La présente invention concerne également une interconnexion électrique entre puces empilées, ou entre une puce et un circuit dans un support sous-jacent comme un substrat d'enveloppe, qui est formée en appliquant un matériau électriquement conducteur sous forme d'aérosol, en contact avec des pastilles sur la puce ou sur la puce et le substrat, et en passant entre les pastilles respectives. Dans certains modes de réalisation, un filet est formé au coin intérieur formé par une paroi latérale d'interconnexion de la puce et un panneau intérieur de surface depuis les pastilles d'un élément sous-jacent (puce ou support sous-jacent(e)) ; et le matériau électriquement conducteur passe sur une surface du filet.
PCT/US2009/067386 2008-12-09 2009-12-09 Interconnexion de puce semi-conductrice formée par application aérosol de matériau électriquement conducteur WO2010068699A2 (fr)

Priority Applications (2)

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JP2011540873A JP5631328B2 (ja) 2008-12-09 2009-12-09 電気伝導材料のエアゾール・アプリケーションによって形成される半導体ダイ相互接続
CN2009801492852A CN102246298A (zh) 2008-12-09 2009-12-09 通过电传导材料的喷雾施加形成的半导体裸片互连

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US12113808P 2008-12-09 2008-12-09
US61/121,138 2008-12-09
US28058409P 2009-11-04 2009-11-04
US61/280,584 2009-11-04

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WO2010068699A2 WO2010068699A2 (fr) 2010-06-17
WO2010068699A3 true WO2010068699A3 (fr) 2010-08-26

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US (1) US20100140811A1 (fr)
JP (1) JP5631328B2 (fr)
KR (1) KR101566573B1 (fr)
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WO (1) WO2010068699A2 (fr)

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JP2012511835A (ja) 2012-05-24
JP5631328B2 (ja) 2014-11-26
KR20110103413A (ko) 2011-09-20
WO2010068699A2 (fr) 2010-06-17
CN102246298A (zh) 2011-11-16
KR101566573B1 (ko) 2015-11-05

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