WO2010058662A1 - Procédé de fabrication d'un transistor de film organique mince, et transistor de film organique mince - Google Patents

Procédé de fabrication d'un transistor de film organique mince, et transistor de film organique mince Download PDF

Info

Publication number
WO2010058662A1
WO2010058662A1 PCT/JP2009/067627 JP2009067627W WO2010058662A1 WO 2010058662 A1 WO2010058662 A1 WO 2010058662A1 JP 2009067627 W JP2009067627 W JP 2009067627W WO 2010058662 A1 WO2010058662 A1 WO 2010058662A1
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
manufacturing
organic
Prior art date
Application number
PCT/JP2009/067627
Other languages
English (en)
Japanese (ja)
Inventor
斉一 都築
潤 山田
Original Assignee
コニカミノルタホールディングス株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by コニカミノルタホールディングス株式会社 filed Critical コニカミノルタホールディングス株式会社
Priority to JP2009552945A priority Critical patent/JP4561934B2/ja
Priority to US13/129,250 priority patent/US8420465B2/en
Publication of WO2010058662A1 publication Critical patent/WO2010058662A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H10K71/135—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing using ink-jet printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate

Definitions

  • the present invention relates to an organic thin film transistor manufacturing method and an organic thin film transistor.
  • TFT thin film transistor
  • organic TFTs TFTs using organic materials
  • Organic materials have a wider choice of materials than inorganic materials, and the manufacturing process of organic TFTs uses processes with excellent productivity such as printing and coating instead of the vacuum process and high temperature process described above. Cost can be reduced.
  • organic TFTs may be formed on, for example, plastic film substrates having poor heat resistance, and are expected to be applied in various fields.
  • Patent Literature a technique in which a partition called a bank is formed around the periphery of a region to be coated using photolithography to prevent the discharged ink from flowing out of the region to be coated.
  • Ink Solvent The organic semiconductor material usually has low solubility, and even a precursor-type material with enhanced solubility can be dissolved only in the organic solvent. Organic solvents have weak intermolecular interactions and generally have low surface tension compared to water (73 mN / m).
  • the surface tension of the organic solvent is, for example, methanol: 23 mN / m, ethanol: 23 mN / m, isopropyl alcohol: 21 mN / m, acetone: 23 mN / m, benzene: 29 mN / m, n-hexane: 18 mN / m, n- Pentane: 16 mN / m, monomethyl ether acetate (PGMEA): 24 mN / m, anisole: 33 mN / m, and the like.
  • PMEA monomethyl ether acetate
  • the solubility of the organic semiconductor material is usually less than 1% and at most about several percent. For this reason, in order to ensure the required film thickness, it is necessary to apply a large amount of ink. As a result, it is not easy to prevent outflow by the bank.
  • the channel region in which the organic semiconductor film is formed has a short side of about 30 ⁇ m ⁇ long side of about 100 ⁇ m, usually a short side of about 10 ⁇ m ⁇ long side of about 30 ⁇ m.
  • the size of ink droplets ejected by the ink jet method is 10 to 20 ⁇ m ⁇ . For this reason, considering the ink droplet landing accuracy and the channel pattern accuracy, the ink droplet spreads on the bank after landing on the channel region. That is, it is difficult to prevent the bank from leaking out.
  • Patent Document 2 a method is known in which the shape of the bank is devised so that an opening is formed in the channel region and the ink guide region extending outward from the channel region, and the ink is guided to the channel region through the ink guide region.
  • Patent Document 2 has a problem that even if the ink can be guided to the channel region, the inflow to the region where the ink should not leak cannot be suppressed.
  • the present invention has been made in view of the above problems, and provides an organic TFT manufacturing method and an organic TFT capable of suppressing leakage of ink to unnecessary areas and obtaining excellent characteristics and high reliability. For the purpose.
  • a method for producing an organic thin film transistor comprising: Forming a source electrode and a drain electrode on the base member; A bank layer having an opening in a channel region between the source electrode and the drain electrode and a predetermined region of the base member and having a groove surrounding the opening in the periphery of the opening of the predetermined region is formed. Process, And a step of dropping an organic semiconductor solution into an opening of the bank layer formed in the channel region to form an organic semiconductor film.
  • the predetermined region is a region in which a connection terminal portion extended from the source electrode or the drain electrode is disposed. Production method.
  • the organic thin film transistor has a bottom gate structure, The organic thin film transistor according to any one of 1 to 7, wherein the base member includes a substrate, a gate electrode provided on the substrate, and a gate insulating film covering the gate electrode. Production method.
  • a wiring pattern is formed under the gate insulating film, the surface of the gate insulating film is partially raised by the thickness of the wiring pattern, and the surface of the bank layer formed on the gate insulating film is partially 9.
  • the organic thin film transistor has a top gate structure, 7.
  • the present invention even when the ink dripped into the channel region flows out beyond the bank, the inflow of the ink into the predetermined region is prevented by the groove formed at the peripheral edge of the predetermined region where the ink should not leak. Is prevented. As a result, an organic TFT capable of obtaining excellent characteristics and high reliability can be manufactured.
  • FIG. 1A to FIG. 1G are schematic cross-sectional views showing the outline of the manufacturing process of the bottom gate type organic TFT 1.
  • the gate electrode G is formed on the substrate P (FIG. 1A).
  • a material for the substrate P polyimide, polyamide, polyethylene tephthalol (PET), polyethylene naphthalate (PEN), polyester sulfone (PES), glass, or the like can be used.
  • the gate electrode G can be formed by forming a gate electrode material on the substrate P using a sputtering method, vapor deposition, or the like and then patterning the material using a photolithography method.
  • a sputtering method vapor deposition, or the like
  • the material of the gate electrode G Al, Au, Ag, Pt, Pd, Cu, Cr, Mo, In, Zn, Mg, etc., alloys or oxides containing these, or organic conductors such as carbon nanotubes, etc. Can be used.
  • a gate insulating film IF is formed (FIG. 1B).
  • a method for forming the gate insulating film IF sputtering, vapor deposition, CVD, or the like can be used.
  • a material of the gate insulating film IF inorganic oxides such as silicon oxide, aluminum oxide, tantalum oxide, and titanium oxide, and inorganic nitrides such as silicon nitride and aluminum nitride can be used.
  • polyimide, polyamide, polyester, polyacrylate, photo-curing polymer of photo radical polymerization, photo cation polymerization, copolymer containing acrylonitrile component, organic compound such as polyvinyl phenol, polyvinyl alcohol, novolac resin, cyanoethyl pullulan Etc. can also be used.
  • the source electrode S and the drain electrode D are formed (FIG. 1C).
  • the substrate P on which the gate insulating film IF is formed it can be formed by using a photolithography method, various printing methods, a droplet coating method, or the like in the same manner as the method for forming the gate electrode G described above.
  • the electrode material for the source electrode S and the drain electrode D the same electrode material as that for the gate electrode G can be used.
  • FIG. 1 (d-1), FIG. 1 (d-2) is a schematic plan view of FIG. 1 (d-1), and FIG. 1 (d-1) shows a cross section taken along the line ABA 'of FIG. 1 (d-2).
  • the bank layer BK can be formed by forming a bank material using a spin coating method and then patterning it using a photolithography method.
  • a bank agent having liquid repellency with respect to the organic semiconductor solution (ink) IK can be used as Specifically, an acrylic resin, a polyimide resin, an epoxy resin or the like that is insoluble in the solvent of the ink IK can be used as a suitable bank agent.
  • an opening BKa and an opening BKb are formed in a channel region between the source electrode S and the drain electrode D and a region corresponding to the connection terminal portion Da provided extending from the drain electrode D, respectively. Further, a groove BKc surrounding the opening BKb is formed at the periphery of the opening BKb formed in the region corresponding to the connection terminal portion Da. The operation of the groove BKc will be described later.
  • an organic semiconductor film SF is formed (FIG. 1E).
  • a method for forming the organic semiconductor film SF it is possible to form the organic semiconductor film SF by ejecting the ink IK into the opening BKa of the bank layer BK formed in the channel region using an ink jet method.
  • a polycyclic aromatic compound, a conjugated polymer, or the like can be used, but is not particularly limited.
  • a polymer material, an oligomer, or a low-molecular material may be used, and a material in which molecules are regularly arranged by intermolecular interaction to form a crystal after film formation is particularly preferable.
  • Pentacene, porphyrin, phthalocyanine, oligothiophene, oligophenylene, polythiophene, polyphenylene, and derivatives thereof can be used.
  • pentacene 6,13-bis (triisopropylsilylethynyl) pentacene, tetrabenzoporphyrin, poly (3-hexylthiophene), or the like can be used.
  • a passivation film PF is formed to block and protect the organic semiconductor film SF from the external atmosphere (FIG. 1 (f)).
  • the passivation film PF is formed so as to cover a region other than the opening BKb of the bank layer BK.
  • a material for the passivation film PF SiO 2 , SiN, or the like can be used.
  • a method for forming the passivation film PF a sputtering method can be used. However, since a vacuum apparatus is required and the cost is increased, it is preferable to use an atmospheric pressure plasma method.
  • the atmospheric pressure plasma method can form a high-density thin film, it is suitable for forming a passivation film PF that functions as a protective layer for the organic semiconductor film SF.
  • the passivation film PF is not always necessary, and is appropriately formed according to the material of the organic semiconductor film SF.
  • the organic TFT 1 is completed as described above.
  • a pixel electrode E is formed on the completed organic TFT 1 (FIG. 1 (g)) to obtain an organic TFT array 1A.
  • the pixel electrode E is connected to the connection terminal portion Da provided extending from the drain electrode D through the opening BKb formed in the bank layer BK.
  • the pixel electrode material can be deposited using a sputtering method and then formed using a photolithography method. It can also be formed by direct patterning using the IJ method, printing method or the like.
  • ITO or the like can be used as a material of the pixel electrode E.
  • FIG. 2A and FIG. 2B are schematic sectional views of the periphery of the groove BKc for explaining the operation of the groove BKc.
  • the unevenness of the surface of the bank layer BK makes the ink IK wet and spread faster.
  • the surface shape of the bank layer BK changes in the direction in which the contact angle of the ink IK stands at the stepped portion due to the unevenness of the bank layer BK, the ink IK is temporarily pinned at the changed portion.
  • bank agents having special surface lyophobic properties and cross-sectional lyophilic properties
  • the usual bank agents generally have lyophobic properties (due to the material)
  • the cross section also has the same contact angle as the surface.
  • the ink IK that has been wetted on the surface of the bank layer BK (FIG. 2A) reaches the side wall (groove BKc) of the bank layer BK (FIG. 2B), and has the same contact angle ⁇ 1 with respect to the side wall. Try to touch with.
  • the surface of the bank layer BK is bent in the direction away from the ink IK by the groove BKc, the apparent contact angle is increased by the bent angle ⁇ 2, and the liquid repellency is improved.
  • the ink IK can be pressed into a more desired region.
  • the angle ⁇ 2 can be increased, so that a greater effect can be obtained.
  • the groove BKc is an opening through which the base member is exposed, but may be a recess. Even in this case, the same effect can be obtained. Further, a plurality of grooves BKc may be provided so as to surround the opening BKb. In this case, a greater effect can be obtained.
  • the trench BKc is formed by patterning using a photolithography method.
  • a bus line or the like is provided under the gate insulating film IF.
  • the used wiring pattern BL is formed, the surface of the gate insulating film IF is partially raised by the thickness of the wiring pattern BL, and the surface of the bank layer BK formed on the gate insulating film IF is partially raised.
  • the groove BKc may be formed by forming (the raised portion BKt).
  • the groove BKc can be easily formed simply by providing a new wiring pattern BL on an existing bus line without using a photolithography method, so that the manufacturing process can be simplified and the cost can be reduced. Can do.
  • the groove BKc is formed by using the above-described photolithography method and the method using the wiring pattern BL in combination. May be. A synergistic effect can be exhibited even when one method cannot obtain a sufficient effect.
  • the opening BKb and the opening BKb are respectively provided in the channel region and the region corresponding to the connection terminal portion Da, and the opening BKb is provided at the periphery of the opening BKb.
  • the bank layer BK having the groove BKc surrounding the BK is formed, and the ink IK is dropped into the opening BKa of the bank layer BK formed in the channel region to form the organic semiconductor film SF.
  • the element configuration of the organic TFT is not particularly limited, and may be a top gate type.
  • the bank layer BK may be formed on the substrate P on which the source electrode S and the drain electrode D are formed, as shown in FIG.
  • a photosensitive resist is applied to a soda lime glass substrate (FIG. 1 (a): substrate P) for STN liquid crystal on which a SiO 2 / Cr film is sputtered, and then a photo having a pattern of the gate electrode G
  • the resist layer having the shape of the gate electrode G was formed by exposing and developing through a mask. After removing the Cr film in a region other than where the resist layer was formed by immersing in an etching solution such as a nitrate cerium ammonium solution, the resist layer was removed to form a gate electrode G (FIG. 1A). ).
  • a photosensitive organic insulating film was formed to form a gate insulating film IF having a thickness of 500 nm (FIG. 1B).
  • a Cr film was formed in this order with a thickness of 5 nm and Au with a thickness of 50 nm.
  • ultrasonic cleaning was performed with dimethylformamide at room temperature to remove the unnecessary lift-off resist, and the source electrode S and the drain electrode D were formed (FIG. 1C).
  • the distance between the source electrode S and the drain electrode D, which is the channel length, was 10 ⁇ m, and the channel width was 100 ⁇ m.
  • a commercially available liquid repellent bank agent (manufactured by Nissan Chemical Co., Ltd .: NPAR-502) is spin-coated. After that, a bank layer BK was formed by patterning using a photolithography method (FIG. 1D).
  • openings BKa having a size of 20 ⁇ m ⁇ 100 ⁇ m were provided at a pitch of 141 ⁇ m in the channel region. Further, an opening BKb having a size of 10 ⁇ m ⁇ 10 ⁇ m was provided in a region corresponding to the connection terminal portion Da provided extending from the drain electrode D. Further, a groove BKc surrounding the opening BKb was provided at a position 5 ⁇ m away from the opening BKb. The center of the channel region and the center position of the connection terminal portion Da are arranged in a staggered manner.
  • the organic TFT 1 thus completed was observed with an optical microscope and an AFM (manufactured by Keyence Corporation). As a result, the ink IK did not enter the connection terminal portion Da extended from the drain electrode D. It was confirmed that the organic semiconductor film SF having an average film thickness of 50 nm was accurately formed in the channel region.

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)

Abstract

La présente invention concerne un procédé de fabrication de TFT organique permettant de supprimer les fuites d'encre dans une région inutile et d'obtenir d'excellentes caractéristiques et une fiabilité élevée, ainsi qu'un TFT organique. Ledit procédé de fabrication de TFT organique comprend les étapes suivantes : une étape de formation d'une électrode source et d'une électrode déversoir sur un élément de base ; une étape de formation d'une couche de bord, qui présente des ouvertures situées sur une région de canal entre l'électrode source et l'électrode déversoir, et sur une région prédéfinie de l'élément de base et une rainure entourant l'ouverture sur la circonférence de l'ouverture sur la région prédéfinie ; et une étape de formation du film semi-conducteur organique par versement d'une solution semi-conductrice organique dans l'ouverture de la couche de bord formée sur la région de canal.
PCT/JP2009/067627 2008-11-19 2009-10-09 Procédé de fabrication d'un transistor de film organique mince, et transistor de film organique mince WO2010058662A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009552945A JP4561934B2 (ja) 2008-11-19 2009-10-09 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ
US13/129,250 US8420465B2 (en) 2008-11-19 2009-10-09 Organic thin film transistor manufacturing method and organic thin film transistor

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008295427 2008-11-19
JP2008-295427 2008-11-19

Publications (1)

Publication Number Publication Date
WO2010058662A1 true WO2010058662A1 (fr) 2010-05-27

Family

ID=42198101

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2009/067627 WO2010058662A1 (fr) 2008-11-19 2009-10-09 Procédé de fabrication d'un transistor de film organique mince, et transistor de film organique mince

Country Status (3)

Country Link
US (1) US8420465B2 (fr)
JP (1) JP4561934B2 (fr)
WO (1) WO2010058662A1 (fr)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012176232A1 (fr) * 2011-06-21 2012-12-27 パナソニック株式会社 Élément de transistor à couches minces et son procédé de production, élément d'écran électroluminescent organique et son procédé de production et écran électroluminescent organique
WO2012176231A1 (fr) * 2011-06-21 2012-12-27 パナソニック株式会社 Élément de transistor à couches minces et son procédé de production, élément d'écran électroluminescent organique et écran électroluminescent organique
US8420465B2 (en) 2008-11-19 2013-04-16 Konica Minolta Holdings, Inc. Organic thin film transistor manufacturing method and organic thin film transistor
US8907344B2 (en) 2011-11-14 2014-12-09 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US8941115B2 (en) 2011-11-14 2015-01-27 Panasonic Corporation Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US8946730B2 (en) 2011-11-14 2015-02-03 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US8969884B2 (en) 2011-11-14 2015-03-03 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device
US9024319B2 (en) 2011-11-14 2015-05-05 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US9153487B2 (en) 2011-12-23 2015-10-06 Samsung Electronics Co., Ltd. Methods of forming wirings in electronic devices
KR20200088797A (ko) 2017-12-11 2020-07-23 에이지씨 가부시키가이샤 네거티브형 감광성 수지 조성물

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101636453B1 (ko) * 2015-01-29 2016-07-05 한림대학교 산학협력단 유기 박막 트랜지스터 및 그 제조 방법
CN104698662A (zh) * 2015-03-26 2015-06-10 京东方科技集团股份有限公司 显示装置及其制作方法
JP2016213221A (ja) * 2015-04-30 2016-12-15 国立研究開発法人物質・材料研究機構 金属箔を用いた電極配線の形成方法及びこれを用いた有機トランジスタの製造方法
CN105097831B (zh) * 2015-06-23 2019-03-29 京东方科技集团股份有限公司 低温多晶硅背板及其制造方法和发光器件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005142474A (ja) * 2003-11-10 2005-06-02 Canon Inc 電界効果型トランジスタおよびその製造方法
JP2007036259A (ja) * 2005-07-27 2007-02-08 Samsung Electronics Co Ltd 薄膜トランジスタ基板及びその製造方法
JP2007515776A (ja) * 2003-05-20 2007-06-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体構成用の構造およびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100530758C (zh) 1998-03-17 2009-08-19 精工爱普生株式会社 薄膜构图的衬底及其表面处理
JP4795634B2 (ja) * 2003-10-31 2011-10-19 出光興産株式会社 有機薄膜トランジスタ
JP2006126692A (ja) * 2004-11-01 2006-05-18 Seiko Epson Corp 薄膜パターン基板、デバイスの製造方法、及び電気光学装置、並びに電子機器
KR20070054054A (ko) 2005-11-22 2007-05-28 삼성전자주식회사 표시장치와 이의 제조방법
JP2007311677A (ja) * 2006-05-22 2007-11-29 Konica Minolta Holdings Inc 有機薄膜トランジスタの製造方法、有機薄膜トランジスタ
KR20090077518A (ko) * 2008-01-11 2009-07-15 삼성전자주식회사 박막트랜지스터 표시판, 이를 포함하는 액정표시장치 및이의 제조 방법
US8420465B2 (en) 2008-11-19 2013-04-16 Konica Minolta Holdings, Inc. Organic thin film transistor manufacturing method and organic thin film transistor

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007515776A (ja) * 2003-05-20 2007-06-14 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 半導体構成用の構造およびその製造方法
JP2005142474A (ja) * 2003-11-10 2005-06-02 Canon Inc 電界効果型トランジスタおよびその製造方法
JP2007036259A (ja) * 2005-07-27 2007-02-08 Samsung Electronics Co Ltd 薄膜トランジスタ基板及びその製造方法

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8420465B2 (en) 2008-11-19 2013-04-16 Konica Minolta Holdings, Inc. Organic thin film transistor manufacturing method and organic thin film transistor
JPWO2012176232A1 (ja) * 2011-06-21 2015-02-23 パナソニック株式会社 薄膜トランジスタ素子とその製造方法、有機ｅｌ表示素子とその製造方法、および有機ｅｌ表示装置
WO2012176231A1 (fr) * 2011-06-21 2012-12-27 パナソニック株式会社 Élément de transistor à couches minces et son procédé de production, élément d'écran électroluminescent organique et écran électroluminescent organique
CN103503153A (zh) * 2011-06-21 2014-01-08 松下电器产业株式会社 薄膜晶体管元件及其制造方法、有机el显示元件和有机el显示装置
US9024449B2 (en) 2011-06-21 2015-05-05 Panasonic Corporation Thin-film transistor element and method for producing same, organic EL display element and method for producing same, and organic EL display device
US8994186B2 (en) 2011-06-21 2015-03-31 Panasonic Corporation Thin-film transistor element and method for producing same, organic el display element, and organic el display device
WO2012176232A1 (fr) * 2011-06-21 2012-12-27 パナソニック株式会社 Élément de transistor à couches minces et son procédé de production, élément d'écran électroluminescent organique et son procédé de production et écran électroluminescent organique
JPWO2012176231A1 (ja) * 2011-06-21 2015-02-23 パナソニック株式会社 薄膜トランジスタ素子とその製造方法、有機ｅｌ表示素子、および有機ｅｌ表示装置
US8946730B2 (en) 2011-11-14 2015-02-03 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US8969884B2 (en) 2011-11-14 2015-03-03 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display elements and organic electroluminescent display device
US8941115B2 (en) 2011-11-14 2015-01-27 Panasonic Corporation Thin-film transistor element and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US8907344B2 (en) 2011-11-14 2014-12-09 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US9024319B2 (en) 2011-11-14 2015-05-05 Panasonic Corporation Thin-film transistor device and method for manufacturing same, organic electroluminescent display element, and organic electroluminescent display device
US9153487B2 (en) 2011-12-23 2015-10-06 Samsung Electronics Co., Ltd. Methods of forming wirings in electronic devices
KR20200088797A (ko) 2017-12-11 2020-07-23 에이지씨 가부시키가이샤 네거티브형 감광성 수지 조성물

Also Published As

Publication number Publication date
JPWO2010058662A1 (ja) 2012-04-19
US8420465B2 (en) 2013-04-16
US20110254003A1 (en) 2011-10-20
JP4561934B2 (ja) 2010-10-13

Similar Documents

Publication Publication Date Title
JP4561934B2 (ja) 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ
US8372686B2 (en) Method for producing an organic thin film transistor and an organic thin film transistor produced by the method
US8450142B2 (en) Organic thin film transistors
US8089065B2 (en) Organic thin film transistors
US20070166855A1 (en) Display device and method of manufacturing the same
JP5256676B2 (ja) 有機半導体素子、有機半導体素子の製造方法、有機トランジスタアレイ、およびディスプレイ
US20100244015A1 (en) Organic semiconductor device, manufacturing method of same, organic transistor array, and display
JP5741832B2 (ja) アクティブマトリックス基板及びアクティブマトリックス基板の製造方法、液晶表示装置
JPWO2008075625A1 (ja) 半導体デバイス
JP4656262B2 (ja) 薄膜トランジスタの製造方法
JP2010016280A (ja) 有機ｔｆｔの製造方法、及び有機ｔｆｔ
JP5560629B2 (ja) 薄膜トランジスタの製造方法
JP4605319B2 (ja) 薄膜トランジスタの製造方法、及び薄膜トランジスタ
US8001491B2 (en) Organic thin film transistor and method of fabricating the same
KR20100070231A (ko) 유기박막트랜지스터, 패턴형성방법, 이를 이용한 유기박막트랜지스터 및 액정표시소자 제조방법
JP2010199130A (ja) 薄膜トランジスタの製造方法
JP2009302441A (ja) 有機ｔｆｔ
JP2007243001A (ja) 有機薄膜トランジスタの製造方法及び有機薄膜トランジスタ
US20110237053A1 (en) Method and Apparatus for the Formation of an Electronic Device
JP5422972B2 (ja) 有機薄膜トランジスタアレイの製造方法、及び有機薄膜トランジスタアレイ
JP2010021402A (ja) 有機ｔｆｔ
JP2010034126A (ja) 有機ｔｆｔの製造方法、及び有機ｔｆｔ
JP5151782B2 (ja) Ｔｆｔアレイ基板の製造方法
JP5200408B2 (ja) 薄膜トランジスタの製造方法

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 2009552945

Country of ref document: JP

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 09827443

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 13129250

Country of ref document: US

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 09827443

Country of ref document: EP

Kind code of ref document: A1