JP2007515776A - 半導体構成用の構造およびその製造方法 - Google Patents
半導体構成用の構造およびその製造方法 Download PDFInfo
- Publication number
- JP2007515776A JP2007515776A JP2006530832A JP2006530832A JP2007515776A JP 2007515776 A JP2007515776 A JP 2007515776A JP 2006530832 A JP2006530832 A JP 2006530832A JP 2006530832 A JP2006530832 A JP 2006530832A JP 2007515776 A JP2007515776 A JP 2007515776A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- recess
- resist
- substrate
- groove
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 113
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 238000000151 deposition Methods 0.000 claims abstract description 19
- 238000010276 construction Methods 0.000 claims abstract description 4
- 239000010410 layer Substances 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 33
- 238000007373 indentation Methods 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 16
- 238000007639 printing Methods 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 11
- 238000007641 inkjet printing Methods 0.000 claims description 10
- 239000002243 precursor Substances 0.000 claims description 7
- 239000011159 matrix material Substances 0.000 claims description 5
- 229920000642 polymer Polymers 0.000 claims description 4
- 239000002356 single layer Substances 0.000 claims description 2
- 230000009471 action Effects 0.000 abstract description 2
- 230000008021 deposition Effects 0.000 abstract description 2
- 239000000243 solution Substances 0.000 description 30
- 239000007788 liquid Substances 0.000 description 13
- 238000009736 wetting Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 8
- 239000004020 conductor Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000000813 microcontact printing Methods 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000000845 micromoulding in capillary Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- -1 polyphenylene vinylene Polymers 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 238000004049 embossing Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920000553 poly(phenylenevinylene) Polymers 0.000 description 2
- 229920002098 polyfluorene Polymers 0.000 description 2
- 239000002861 polymer material Substances 0.000 description 2
- 229920000123 polythiophene Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 125000003545 alkoxy group Chemical group 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000012876 carrier material Substances 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 239000011344 liquid material Substances 0.000 description 1
- 238000001053 micromoulding Methods 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 239000002071 nanotube Substances 0.000 description 1
- 239000002070 nanowire Substances 0.000 description 1
- 230000001151 other effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000767 polyaniline Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- ODHXBMXNKOYIBV-UHFFFAOYSA-N triphenylamine Chemical compound C1=CC=CC=C1N(C=1C=CC=CC=1)C1=CC=CC=C1 ODHXBMXNKOYIBV-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
- H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Thin Film Transistor (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Electroluminescent Light Sources (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
Description
Claims (22)
- 半導体構成用の構造であって、基板に結合したレジスト構造を含み、前記レジスト構造は、
半導体またはその前駆体を含む溶液を堆積するくぼみと、
前記くぼみの縁部の少なくとも一部に整列し、突出部によって前記くぼみから分離された溝とを備える、半導体構成用の構造。 - 前記レジスト構造は、前記半導体構成の単一層に形成される、請求項1に記載の構造。
- 前記溝は、前記くぼみを実質的に取り囲む、請求項1に記載の構造。
- 前記半導体は有機半導体である、請求項1に記載の構造。
- 前記基板から遠い方の前記突出部の端部の幅は、前記基板に近い方の前記突出部の端部の幅よりも広い、請求項1に記載の構造。
- 前記基板に近い方の前記突出部の端部の幅は、前記基板から遠い方の前記突出部の端部の幅よりも広い、請求項1に記載の構造。
- 前記突出部の断面は、実質的に切頭円錐形である、請求項5または6に記載の構造。
- 前記レジスト構造は、ポリマー層によって形成される、請求項1に記載の構造。
- くぼみ方向にほぼ直交する前記くぼみの断面は、丸い角を含む、請求項1に記載の構造。
- くぼみ方向にほぼ直交する前記くぼみの断面は、ほぼ矩形である、請求項1に記載の構造。
- 前記溝の深さは、前記くぼみの深さとほぼ同じである、請求項1に記載の構造。
- 前記くぼみは、電界効果トランジスタの活性層を形成する半導体を含む、請求項1に記載の構造。
- 前記電界効果トランジスタは、複数の交差指型電極を有するソースおよびドレイン、ならびに前記複数の交差指型電極を横切って延びるゲートを備える、請求項12に記載の構造。
- 前記くぼみは、前記相互にかみ合った指部の長手方向にほぼ直交する方向に前記ゲートの先まで延びる、請求項13に記載の構造。
- 前記くぼみは、前記相互にかみ合った指部の長手方向にほぼ整列する方向に前記ゲートを越えて延びない、請求項14に記載の構造。
- 請求項1から15のいずれかに記載のレジスト構造を備える電子デバイス。
- 請求項12に記載の構造を有する集積回路を備える、請求項16に記載の電子デバイス。
- 請求項12に記載の構造を有するアクティブ・マトリックス型バックプレーンまたはアクティブ・マトリックス型ディスプレイを備える、請求項16に記載の電子デバイス。
- 請求項12に記載の構造を有するエレクトロ・ルミネッセンス・デバイス。
- 半導体構成を製作する方法であって、
基板を提供するステップと、
前記基板に結合したレジスト構造を適用するステップとを含み、前記レジスト構造は、半導体またはその前駆体を含む溶液を堆積するためのくぼみと、前記くぼみの縁部の少なくとも一部に整列し、突出部によって前記くぼみから分離した溝とを備え、前記方法はさらに、
前記くぼみの中に前記半導体を含む前記溶液を堆積するステップを含む、方法。 - 前記溶液を堆積する前記ステップは、印刷工程によって行われる、請求項20に記載の方法。
- 前記溶液を堆積する前記ステップは、インク・ジェット印刷工程によって行われる、請求項21に記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03101431 | 2003-05-20 | ||
PCT/IB2004/050669 WO2004105104A1 (en) | 2003-05-20 | 2004-05-13 | A structure for a semiconductor arrangement and a method of manufacturing a semiconductor arrangement |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007515776A true JP2007515776A (ja) | 2007-06-14 |
Family
ID=33462182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006530832A Pending JP2007515776A (ja) | 2003-05-20 | 2004-05-13 | 半導体構成用の構造およびその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7651957B2 (ja) |
EP (1) | EP1629525B1 (ja) |
JP (1) | JP2007515776A (ja) |
KR (1) | KR100989263B1 (ja) |
CN (1) | CN1791965B (ja) |
AT (1) | ATE361550T1 (ja) |
DE (1) | DE602004006256T2 (ja) |
WO (1) | WO2004105104A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007005757A (ja) * | 2005-06-21 | 2007-01-11 | Lg Philips Lcd Co Ltd | 薄膜トランジスタ、および、それの製造方法、並びに、液晶表示装置、および、それの製造方法 |
WO2009101862A1 (ja) * | 2008-02-12 | 2009-08-20 | Konica Minolta Holdings, Inc. | 有機半導体層の成膜方法、および有機薄膜トランジスタの製造方法 |
JP2009302441A (ja) * | 2008-06-17 | 2009-12-24 | Konica Minolta Holdings Inc | 有機tft |
WO2010058662A1 (ja) * | 2008-11-19 | 2010-05-27 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
WO2013042755A1 (ja) * | 2011-09-22 | 2013-03-28 | 日本電気株式会社 | 有機半導体素子 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8138075B1 (en) | 2006-02-06 | 2012-03-20 | Eberlein Dietmar C | Systems and methods for the manufacture of flat panel devices |
TWI345326B (en) * | 2006-03-29 | 2011-07-11 | Pioneer Corp | Organic thin film transistor device and manufacturing method therefor |
KR101206661B1 (ko) * | 2006-06-02 | 2012-11-30 | 삼성전자주식회사 | 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자 |
US8017940B2 (en) * | 2007-05-25 | 2011-09-13 | Panasonic Corporation | Organic transistor, method of forming organic transistor and organic EL display with organic transistor |
GB2450381B (en) * | 2007-06-22 | 2009-11-11 | Cambridge Display Tech Ltd | Organic thin film transistors |
JP5677088B2 (ja) * | 2007-08-28 | 2015-02-25 | エージェンシー フォー サイエンス,テクノロジー アンド リサーチ | 有機電子デバイスもしくは光電子デバイスの製造方法 |
KR101509809B1 (ko) * | 2009-12-01 | 2015-04-08 | 현대자동차주식회사 | 차량의 커튼에어백용 램프브라켓 |
FR2956669A1 (fr) * | 2010-02-23 | 2011-08-26 | Commissariat Energie Atomique | Procede de cristallisation de materiaux |
CN107204375B (zh) * | 2017-05-19 | 2019-11-26 | 深圳市华星光电技术有限公司 | 薄膜晶体管及其制作方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999048339A1 (fr) * | 1998-03-17 | 1999-09-23 | Seiko Epson Corporation | Substrat de formation de motifs sur film mince et son traitement de surface |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2723508B2 (ja) * | 1985-10-21 | 1998-03-09 | 日本電気株式会社 | 電子線直接描画のためのアライメント方法 |
US6416778B1 (en) * | 1997-01-24 | 2002-07-09 | Femmepharma | Pharmaceutical preparations and methods for their regional administration |
JPH11121178A (ja) * | 1997-10-14 | 1999-04-30 | Matsushita Electric Ind Co Ltd | 有機エレクトロルミネセンス素子及びその製造方法 |
KR100403714B1 (ko) * | 2000-06-10 | 2003-11-01 | 씨씨알 주식회사 | 웹문서 레이아웃 이미지 및 웹사이트 구조를 제공하여인터넷 검색을 용이하게 할 수 있는 시스템 및 방법 |
US7215393B2 (en) * | 2000-07-28 | 2007-05-08 | Matsushita Electric Industrial Co., Ltd. | Reflective plate and display device using the plate |
EP1335418B1 (en) * | 2002-02-05 | 2005-09-07 | Bernd E. Dr. Maile | Method of fabricating a T-shaped electrode |
-
2004
- 2004-05-13 WO PCT/IB2004/050669 patent/WO2004105104A1/en active IP Right Grant
- 2004-05-13 JP JP2006530832A patent/JP2007515776A/ja active Pending
- 2004-05-13 CN CN200480013709.XA patent/CN1791965B/zh not_active Expired - Fee Related
- 2004-05-13 AT AT04732707T patent/ATE361550T1/de not_active IP Right Cessation
- 2004-05-13 DE DE602004006256T patent/DE602004006256T2/de not_active Expired - Lifetime
- 2004-05-13 US US10/557,622 patent/US7651957B2/en not_active Expired - Fee Related
- 2004-05-13 EP EP04732707A patent/EP1629525B1/en not_active Expired - Lifetime
- 2004-05-13 KR KR1020057022081A patent/KR100989263B1/ko not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1999048339A1 (fr) * | 1998-03-17 | 1999-09-23 | Seiko Epson Corporation | Substrat de formation de motifs sur film mince et son traitement de surface |
Cited By (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007005757A (ja) * | 2005-06-21 | 2007-01-11 | Lg Philips Lcd Co Ltd | 薄膜トランジスタ、および、それの製造方法、並びに、液晶表示装置、および、それの製造方法 |
WO2009101862A1 (ja) * | 2008-02-12 | 2009-08-20 | Konica Minolta Holdings, Inc. | 有機半導体層の成膜方法、および有機薄膜トランジスタの製造方法 |
JP4434312B2 (ja) * | 2008-02-12 | 2010-03-17 | コニカミノルタホールディングス株式会社 | 有機半導体層の成膜方法、および有機薄膜トランジスタの製造方法 |
JPWO2009101862A1 (ja) * | 2008-02-12 | 2011-06-09 | コニカミノルタホールディングス株式会社 | 有機半導体層の成膜方法、および有機薄膜トランジスタの製造方法 |
US8329504B2 (en) | 2008-02-12 | 2012-12-11 | Konica Minolta Holdings, Inc. | Method of forming organic semiconductor layer and method of manufacturing organic thin film transistor |
JP2009302441A (ja) * | 2008-06-17 | 2009-12-24 | Konica Minolta Holdings Inc | 有機tft |
WO2010058662A1 (ja) * | 2008-11-19 | 2010-05-27 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
JP4561934B2 (ja) * | 2008-11-19 | 2010-10-13 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
JPWO2010058662A1 (ja) * | 2008-11-19 | 2012-04-19 | コニカミノルタホールディングス株式会社 | 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ |
US8420465B2 (en) | 2008-11-19 | 2013-04-16 | Konica Minolta Holdings, Inc. | Organic thin film transistor manufacturing method and organic thin film transistor |
WO2013042755A1 (ja) * | 2011-09-22 | 2013-03-28 | 日本電気株式会社 | 有機半導体素子 |
Also Published As
Publication number | Publication date |
---|---|
US7651957B2 (en) | 2010-01-26 |
EP1629525A1 (en) | 2006-03-01 |
ATE361550T1 (de) | 2007-05-15 |
EP1629525B1 (en) | 2007-05-02 |
DE602004006256T2 (de) | 2008-01-24 |
WO2004105104A1 (en) | 2004-12-02 |
KR20060015270A (ko) | 2006-02-16 |
DE602004006256D1 (de) | 2007-06-14 |
CN1791965A (zh) | 2006-06-21 |
US20060281332A1 (en) | 2006-12-14 |
CN1791965B (zh) | 2012-02-22 |
KR100989263B1 (ko) | 2010-10-20 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR101186966B1 (ko) | 유기 트랜지스터를 제조하기 위한 자체-정렬 공정 | |
JP5638944B2 (ja) | 有機薄膜トランジスタ | |
KR101432733B1 (ko) | 박막 트랜지스터의 제조 방법 및 박막 트랜지스터 및디스플레이 장치 | |
JP2007515776A (ja) | 半導体構成用の構造およびその製造方法 | |
US20050121674A1 (en) | Organic thin-film transitor and method of manufacturing method thereof | |
JP4713818B2 (ja) | 有機トランジスタの製造方法、及び有機el表示装置の製造方法 | |
JP4801037B2 (ja) | 電子素子、及びその製造方法 | |
US20070018151A1 (en) | Short-channel transistors | |
JP6070073B2 (ja) | 薄膜トランジスタアレイ | |
US20070241325A1 (en) | Schottky Gate Organic Field Effect Transistor and Fabrication Method of the Same | |
US20080032440A1 (en) | Organic semiconductor device and method of fabricating the same | |
JP4926378B2 (ja) | 表示装置及びその作製方法 | |
JP4699090B2 (ja) | 有機薄膜トランジスタ、それを備えた表示装置および有機薄膜トランジスタの製造方法。 | |
US20090189147A1 (en) | Organic transistor comprising a self-aligning gate electrode, and method for the production thereof | |
TWI637504B (zh) | 畫素結構 | |
KR100584719B1 (ko) | 쓰리-게이트 전계효과 분자트랜지스터 및 그 제조방법 | |
KR101363255B1 (ko) | 유기 박막 트랜지스터 및 이의 제조방법 | |
EP1727219A1 (en) | Organic thin film transistor and method for producing the same | |
CN107851582A (zh) | 有源元件及有源元件的制造方法 | |
KR20060131533A (ko) | 유기박막 트랜지스터 및 그 제조방법 | |
KR20090017792A (ko) | 리프트 오프 방법을 이용한 유기 반도체층의 패터닝방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20070511 |
|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20071005 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110325 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110401 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110624 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111118 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20120410 |