ATE361550T1 - Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung - Google Patents

Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung

Info

Publication number
ATE361550T1
ATE361550T1 AT04732707T AT04732707T ATE361550T1 AT E361550 T1 ATE361550 T1 AT E361550T1 AT 04732707 T AT04732707 T AT 04732707T AT 04732707 T AT04732707 T AT 04732707T AT E361550 T1 ATE361550 T1 AT E361550T1
Authority
AT
Austria
Prior art keywords
semiconductor
depression
semiconductor arrangement
solution containing
trough
Prior art date
Application number
AT04732707T
Other languages
English (en)
Inventor
Paulus C Duineveld
Gerwin H Gelinck
Original Assignee
Koninkl Philips Electronics Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koninkl Philips Electronics Nv filed Critical Koninkl Philips Electronics Nv
Application granted granted Critical
Publication of ATE361550T1 publication Critical patent/ATE361550T1/de

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
    • H01L29/41725—Source or drain electrodes for field effect devices
    • H01L29/41758—Source or drain electrodes for field effect devices for lateral devices with structured layout for source or drain region, i.e. the source or drain region having cellular, interdigitated or ring structure or being curved or angular
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • H10K71/13—Deposition of organic active material using liquid deposition, e.g. spin coating using printing techniques, e.g. ink-jet printing or screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/221—Changing the shape of the active layer in the devices, e.g. patterning by lift-off techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Electroluminescent Light Sources (AREA)
AT04732707T 2003-05-20 2004-05-13 Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung ATE361550T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP03101431 2003-05-20

Publications (1)

Publication Number Publication Date
ATE361550T1 true ATE361550T1 (de) 2007-05-15

Family

ID=33462182

Family Applications (1)

Application Number Title Priority Date Filing Date
AT04732707T ATE361550T1 (de) 2003-05-20 2004-05-13 Struktur einer halbleiter-anordnung und eine methode zur herstellung einer halbleiteranordnung

Country Status (8)

Country Link
US (1) US7651957B2 (de)
EP (1) EP1629525B1 (de)
JP (1) JP2007515776A (de)
KR (1) KR100989263B1 (de)
CN (1) CN1791965B (de)
AT (1) ATE361550T1 (de)
DE (1) DE602004006256T2 (de)
WO (1) WO2004105104A1 (de)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101137865B1 (ko) * 2005-06-21 2012-04-20 엘지디스플레이 주식회사 박막 트랜지스터 기판의 제조방법 및 이를 이용한 박막트랜지스터 기판
US8138075B1 (en) 2006-02-06 2012-03-20 Eberlein Dietmar C Systems and methods for the manufacture of flat panel devices
TWI345326B (en) * 2006-03-29 2011-07-11 Pioneer Corp Organic thin film transistor device and manufacturing method therefor
KR101206661B1 (ko) * 2006-06-02 2012-11-30 삼성전자주식회사 동일 계열의 소재로 형성된 반도체층 및 소스/드레인전극을 포함하는 유기 전자 소자
US8017940B2 (en) * 2007-05-25 2011-09-13 Panasonic Corporation Organic transistor, method of forming organic transistor and organic EL display with organic transistor
GB2450381B (en) * 2007-06-22 2009-11-11 Cambridge Display Tech Ltd Organic thin film transistors
US20100291723A1 (en) * 2007-08-28 2010-11-18 Agency For Science, Technology And Research Method of manufacturing an organic electronic or optoelectronic device
EP2244302B1 (de) 2008-02-12 2016-05-18 Konica Minolta Holdings, Inc. Verfahren zur herstellung einer organischen halbleiterschicht und verfahren zur herstellung eines organischen dünnschichttransistors
JP2009302441A (ja) * 2008-06-17 2009-12-24 Konica Minolta Holdings Inc 有機ｔｆｔ
WO2010058662A1 (ja) * 2008-11-19 2010-05-27 コニカミノルタホールディングス株式会社 有機薄膜トランジスタの製造方法、及び有機薄膜トランジスタ
KR101509809B1 (ko) * 2009-12-01 2015-04-08 현대자동차주식회사 차량의 커튼에어백용 램프브라켓
FR2956669A1 (fr) * 2010-02-23 2011-08-26 Commissariat Energie Atomique Procede de cristallisation de materiaux
WO2013042755A1 (ja) * 2011-09-22 2013-03-28 日本電気株式会社 有機半導体素子
CN107204375B (zh) * 2017-05-19 2019-11-26 深圳市华星光电技术有限公司 薄膜晶体管及其制作方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2723508B2 (ja) * 1985-10-21 1998-03-09 日本電気株式会社 電子線直接描画のためのアライメント方法
US6416778B1 (en) * 1997-01-24 2002-07-09 Femmepharma Pharmaceutical preparations and methods for their regional administration
JPH11121178A (ja) * 1997-10-14 1999-04-30 Matsushita Electric Ind Co Ltd 有機エレクトロルミネセンス素子及びその製造方法
WO1999048339A1 (fr) * 1998-03-17 1999-09-23 Seiko Epson Corporation Substrat de formation de motifs sur film mince et son traitement de surface
KR100403714B1 (ko) * 2000-06-10 2003-11-01 씨씨알 주식회사 웹문서 레이아웃 이미지 및 웹사이트 구조를 제공하여인터넷 검색을 용이하게 할 수 있는 시스템 및 방법
WO2002010806A1 (fr) * 2000-07-28 2002-02-07 Matsushita Electric Industrial Co., Ltd. Feuille reflechissante, son procede de fabrication et unite d'affichage y faisant appel
DE10204621B8 (de) * 2002-02-05 2010-03-25 Maile, Bernd E., Dr. Verfahren zur Herstellung einer mit einem vertikalen Profil versehenen Elektrode und eine derartige Elektrode umfassendes Halbleiterbauelement

Also Published As

Publication number Publication date
EP1629525B1 (de) 2007-05-02
DE602004006256D1 (de) 2007-06-14
US20060281332A1 (en) 2006-12-14
US7651957B2 (en) 2010-01-26
CN1791965B (zh) 2012-02-22
DE602004006256T2 (de) 2008-01-24
KR100989263B1 (ko) 2010-10-20
CN1791965A (zh) 2006-06-21
KR20060015270A (ko) 2006-02-16
EP1629525A1 (de) 2006-03-01
WO2004105104A1 (en) 2004-12-02
JP2007515776A (ja) 2007-06-14

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