DE60139846D1 - Verfahren zur Herstellung von Kuppeln mit hohem Aspektverhältnis mittels Gasphasenabscheidung - Google Patents

Verfahren zur Herstellung von Kuppeln mit hohem Aspektverhältnis mittels Gasphasenabscheidung

Info

Publication number
DE60139846D1
DE60139846D1 DE60139846T DE60139846T DE60139846D1 DE 60139846 D1 DE60139846 D1 DE 60139846D1 DE 60139846 T DE60139846 T DE 60139846T DE 60139846 T DE60139846 T DE 60139846T DE 60139846 D1 DE60139846 D1 DE 60139846D1
Authority
DE
Germany
Prior art keywords
preparation
vapor deposition
aspect ratio
high aspect
domes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE60139846T
Other languages
English (en)
Inventor
Jitendra S Goela
Zlatko Salihbegovic
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shipley Co Inc
Original Assignee
Shipley Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shipley Co Inc filed Critical Shipley Co Inc
Application granted granted Critical
Publication of DE60139846D1 publication Critical patent/DE60139846D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/01—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes on temporary substrates, e.g. substrates subsequently removed by etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE60139846T 2000-08-07 2001-07-31 Verfahren zur Herstellung von Kuppeln mit hohem Aspektverhältnis mittels Gasphasenabscheidung Expired - Lifetime DE60139846D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US09/633,210 US6616870B1 (en) 2000-08-07 2000-08-07 Method of producing high aspect ratio domes by vapor deposition

Publications (1)

Publication Number Publication Date
DE60139846D1 true DE60139846D1 (de) 2009-10-22

Family

ID=24538697

Family Applications (1)

Application Number Title Priority Date Filing Date
DE60139846T Expired - Lifetime DE60139846D1 (de) 2000-08-07 2001-07-31 Verfahren zur Herstellung von Kuppeln mit hohem Aspektverhältnis mittels Gasphasenabscheidung

Country Status (7)

Country Link
US (2) US6616870B1 (de)
EP (1) EP1193324B1 (de)
JP (1) JP2002129335A (de)
KR (1) KR20020012493A (de)
DE (1) DE60139846D1 (de)
IL (2) IL144552A (de)
TW (1) TW555877B (de)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
WO2009051799A1 (en) * 2007-10-18 2009-04-23 Structured Materials Inc. Germanium sulfide compounds for solid electrolytic memory elements
WO2010060646A1 (de) * 2008-11-28 2010-06-03 Volker Probst Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten
US8257075B2 (en) 2008-11-10 2012-09-04 Apple Inc. Carbon composite mold design
US8491720B2 (en) * 2009-04-10 2013-07-23 Applied Materials, Inc. HVPE precursor source hardware
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
WO2010124261A2 (en) * 2009-04-24 2010-10-28 Applied Materials, Inc. Substrate pretreatment for subsequent high temperature group iii depositions
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
JP2012525718A (ja) * 2009-04-29 2012-10-22 アプライド マテリアルズ インコーポレイテッド ＨＶＰＥにおいてその場プレ−ＧａＮ堆積層を形成する方法
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TWI534291B (zh) 2011-03-18 2016-05-21 應用材料股份有限公司 噴淋頭組件
KR20150034666A (ko) * 2013-09-26 2015-04-03 롬 앤드 하스 일렉트로닉 머트어리얼즈 엘엘씨 아연 설파이드 경도의 증가

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4978577A (en) 1989-04-12 1990-12-18 Cvd Incorporated Method for preparing laminates of ZnSe and ZnS
US4997678A (en) 1989-10-23 1991-03-05 Cvd Incorporated Chemical vapor deposition process to replicate the finish and figure of preshaped structures
US5183689A (en) 1991-07-15 1993-02-02 Cvd, Inc. Process for an improved laminated of znse and zns
CA2076578A1 (en) * 1992-08-21 1994-02-22 Miroslav Milinkovic Mandrel for use in nickel vapour deposition processes and nickel molds made therefrom
US5453233A (en) * 1993-04-05 1995-09-26 Cvd, Inc. Method of producing domes of ZNS and ZNSE via a chemical vapor deposition technique
US5594185A (en) * 1995-06-07 1997-01-14 Analytical Bio Chemistry Laboratories, Inc. Self-contained, modular lysimeter and method of using the same
US6007634A (en) * 1997-09-02 1999-12-28 Inco Limited Vapor deposition apparatus
US6042758A (en) 1998-05-05 2000-03-28 Cvd, Inc. Precision replication by chemical vapor deposition
US6228297B1 (en) * 1998-05-05 2001-05-08 Rohm And Haas Company Method for producing free-standing silicon carbide articles
US6464912B1 (en) * 1999-01-06 2002-10-15 Cvd, Incorporated Method for producing near-net shape free standing articles by chemical vapor deposition

Also Published As

Publication number Publication date
US20030209197A1 (en) 2003-11-13
TW555877B (en) 2003-10-01
US6616870B1 (en) 2003-09-09
EP1193324B1 (de) 2009-09-09
IL144552A (en) 2008-07-08
EP1193324A3 (de) 2006-01-11
JP2002129335A (ja) 2002-05-09
EP1193324A2 (de) 2002-04-03
KR20020012493A (ko) 2002-02-16
IL176787A (en) 2010-05-31
IL144552A0 (en) 2002-05-23
US7238241B2 (en) 2007-07-03
IL176787A0 (en) 2006-10-31

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Legal Events

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