WO2010035980A3 - Dispositif de mémoire non volatile et procédés permettant d'enregistrer et de lire des informations sur un dispositif de mémoire non volatile - Google Patents

Dispositif de mémoire non volatile et procédés permettant d'enregistrer et de lire des informations sur un dispositif de mémoire non volatile Download PDF

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Publication number
WO2010035980A3
WO2010035980A3 PCT/KR2009/005245 KR2009005245W WO2010035980A3 WO 2010035980 A3 WO2010035980 A3 WO 2010035980A3 KR 2009005245 W KR2009005245 W KR 2009005245W WO 2010035980 A3 WO2010035980 A3 WO 2010035980A3
Authority
WO
WIPO (PCT)
Prior art keywords
memory device
nonvolatile memory
switching
ferroelectric material
layer
Prior art date
Application number
PCT/KR2009/005245
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English (en)
Korean (ko)
Other versions
WO2010035980A2 (fr
Inventor
황철성
이현주
Original Assignee
서울대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 서울대학교 산학협력단 filed Critical 서울대학교 산학협력단
Publication of WO2010035980A2 publication Critical patent/WO2010035980A2/fr
Publication of WO2010035980A3 publication Critical patent/WO2010035980A3/fr

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)

Abstract

La présente invention concerne un dispositif de mémoire non volatile et des procédés permettant d'enregistrer et de lire les informations sur le dispositif de mémoire non volatile. Le dispositif de mémoire non volatile selon la présente invention comprend une couche mémoire placée entre les électrodes inférieure et supérieure. La couche mémoire constituée d'un matériau ferro-électrique comprend: une couche de stockage d'informations qui stocke les informations selon la polarité de la polarisation rémanente; et une couche de commutation qui est constituée d'un isolant et qui procure une résistance lors de la commutation de la polarisation du matériau ferro-électrique et qui agit en tant que condensateur du matériau ferro-électrique après la commutation ou non de la polarisation du matériau ferro-électrique. Dans le dispositif de mémoire non volatile selon l'invention, lequel dispositif est un nouveau dispositif de mémoire non volatile conceptuel, les informations sont stockées dans la couche de stockage d'informations réalisée à partir d'un matériau ferro-électrique puis elles sont lues par évaluation des caractéristiques de la couche de commutation constituée de l'isolant. En outre, le dispositif de mémoire non volatile est véritablement durable et il présente une capacité élevée pour les données bien que l'épaisseur de la couche mémoire soit inférieure à 100nm.
PCT/KR2009/005245 2008-09-26 2009-09-15 Dispositif de mémoire non volatile et procédés permettant d'enregistrer et de lire des informations sur un dispositif de mémoire non volatile WO2010035980A2 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080094502A KR101021973B1 (ko) 2008-09-26 2008-09-26 비휘발성 기억소자 및 비휘발성 기억소자의 정보기록방법과정보판독방법
KR10-2008-0094502 2008-09-26

Publications (2)

Publication Number Publication Date
WO2010035980A2 WO2010035980A2 (fr) 2010-04-01
WO2010035980A3 true WO2010035980A3 (fr) 2010-06-17

Family

ID=42060239

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/005245 WO2010035980A2 (fr) 2008-09-26 2009-09-15 Dispositif de mémoire non volatile et procédés permettant d'enregistrer et de lire des informations sur un dispositif de mémoire non volatile

Country Status (2)

Country Link
KR (1) KR101021973B1 (fr)
WO (1) WO2010035980A2 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163977B1 (en) 2017-03-22 2018-12-25 Micron Technology, Inc. Chalcogenide memory device components and composition
US10727405B2 (en) 2017-03-22 2020-07-28 Micron Technology, Inc. Chalcogenide memory device components and composition
KR20180134121A (ko) * 2017-06-08 2018-12-18 에스케이하이닉스 주식회사 저항 변화 메모리 소자
KR20190067668A (ko) * 2017-12-07 2019-06-17 에스케이하이닉스 주식회사 저항 변화 소자
KR102188583B1 (ko) * 2018-12-03 2020-12-09 마이크론 테크놀로지, 인크 칼코게나이드 메모리 디바이스 컴포넌트들 및 조성물
FR3090196B1 (fr) * 2018-12-18 2021-10-29 Commissariat Energie Atomique Procede de fabrication d’une memoire ferroelectrique et procede de co-fabrication d’une memoire ferroelectrique et d’une memoire resistive
US20220140146A1 (en) * 2020-10-30 2022-05-05 Applied Materials, Inc. Ferroelectric devices enhanced with interface switching modulation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067828A (ko) * 1996-03-27 1997-10-13 김광호 누설 전류를 이용한 강유전체 메모리
KR100355267B1 (en) * 2000-12-27 2002-10-11 Korea Electronics Telecomm Method for etching oxide material and metal multi thin films and method for fabricating field effect transistor by using the same
KR100430656B1 (ko) * 2000-07-27 2004-05-10 미쓰비시덴키 가부시키가이샤 비휘발성 반도체 기억 장치
KR20070026258A (ko) * 2005-09-05 2007-03-08 세이코 엡슨 가부시키가이샤 복합 산화물 적층체, 복합 산화물 적층체의 제조 방법, 및장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4785180B2 (ja) 2004-09-10 2011-10-05 富士通セミコンダクター株式会社 強誘電体メモリ、多値データ記録方法、および多値データ読出し方法
KR100769547B1 (ko) 2005-12-05 2007-10-23 한국전자통신연구원 유전체 박막을 포함하는 메모리 소자 및 그 제조방법
KR100744566B1 (ko) 2006-09-08 2007-08-01 한국전자통신연구원 금속산화물을 이용한 게이트 스택, 이를 포함하는트랜지스터 일체형 메모리 소자 및 그 메모리소자의구동방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067828A (ko) * 1996-03-27 1997-10-13 김광호 누설 전류를 이용한 강유전체 메모리
KR100430656B1 (ko) * 2000-07-27 2004-05-10 미쓰비시덴키 가부시키가이샤 비휘발성 반도체 기억 장치
KR100355267B1 (en) * 2000-12-27 2002-10-11 Korea Electronics Telecomm Method for etching oxide material and metal multi thin films and method for fabricating field effect transistor by using the same
KR20070026258A (ko) * 2005-09-05 2007-03-08 세이코 엡슨 가부시키가이샤 복합 산화물 적층체, 복합 산화물 적층체의 제조 방법, 및장치

Also Published As

Publication number Publication date
KR101021973B1 (ko) 2011-03-16
KR20100035248A (ko) 2010-04-05
WO2010035980A2 (fr) 2010-04-01

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