JP5572165B2 - グラフェンメモリセルおよびその製造方法 - Google Patents
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 191
- 229910021389 graphene Inorganic materials 0.000 title claims description 190
- 230000015654 memory Effects 0.000 title claims description 117
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 230000010287 polarization Effects 0.000 claims description 46
- 238000000034 method Methods 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 43
- 238000005229 chemical vapour deposition Methods 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 230000005684 electric field Effects 0.000 claims description 12
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000002070 nanowire Substances 0.000 claims description 10
- 239000010408 film Substances 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 239000010941 cobalt Substances 0.000 claims description 5
- 229910017052 cobalt Inorganic materials 0.000 claims description 5
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 5
- 229910052759 nickel Inorganic materials 0.000 claims description 5
- 238000000059 patterning Methods 0.000 claims description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 2
- 238000000926 separation method Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 87
- 239000002356 single layer Substances 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 description 10
- 238000013500 data storage Methods 0.000 description 9
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 5
- 230000001066 destructive effect Effects 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 229920000997 Graphane Polymers 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000000295 complement effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000028161 membrane depolarization Effects 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PCCVSPMFGIFTHU-UHFFFAOYSA-N tetracyanoquinodimethane Chemical compound N#CC(C#N)=C1C=CC(=C(C#N)C#N)C=C1 PCCVSPMFGIFTHU-UHFFFAOYSA-N 0.000 description 2
- XLOFNXVVMRAGLZ-UHFFFAOYSA-N 1,1-difluoroethene;1,1,2-trifluoroethene Chemical group FC(F)=C.FC=C(F)F XLOFNXVVMRAGLZ-UHFFFAOYSA-N 0.000 description 1
- 239000000729 antidote Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 230000005685 electric field effect Effects 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 239000002074 nanoribbon Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 1
- 229920000131 polyvinylidene Polymers 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000002207 thermal evaporation Methods 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/02—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change
- G11C13/025—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using elements whose operation depends upon chemical change using fullerenes, e.g. C60, or nanotubes, e.g. carbon or silicon nanotubes
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys
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- G—PHYSICS
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- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6684—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a ferroelectric gate insulator
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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Description
Claims (39)
- メモリセルのデータ値を表す制御可能な抵抗状態を有するグラフェン層と、抵抗状態を制御するように形成された強誘電体層と、を含み、
グラフェン層は、0より大きなバックグラウンドドーピングレベルを含み、バックグラウンドドーピングレベルは、強誘電体層の分極前に導入された不揮発性メモリセル。 - 強誘電体層がゼロ残留分極を有する場合に高抵抗状態になるようにグラフェン層が形成され、強誘電体層がゼロでない残留分極を有する場合に低抵抗状態になるようにグラフェン層が形成された請求項1に記載の不揮発性メモリセル。
- 更に、強誘電体層に電気的に接続された上部電極を含み、非対称の電圧スイープが上部電極に与えられた場合に高抵抗状態になるようにグラフェン層が形成され、対称の電圧スイープが上部電極に与えられた場合に低抵抗状態になるようにグラフェン層が形成された請求項1に記載の不揮発性メモリセル。
- 高抵抗状態と低抵抗状態が、500%より大きな抵抗変化率を有する請求項2または3に記載の不揮発性メモリセル。
- グラフェン層が、導電性基板上の、強誘電体層と誘電体層との間に配置される請求項1〜4のいずれかに記載の不揮発性メモリセル。
- 強誘電体層が、導電性基板上の、グラフェン層と誘電体層との間に配置される請求項1〜4のいずれかに記載の不揮発性メモリセル。
- 更に、導電性基板を用いた下部電極を含む請求項5または6に記載の不揮発性メモリセル。
- グラフェン層が、導電性酸化物基板上の、エピタキシャル強誘電体層の上に配置される請求項1〜4のいずれかに記載の不揮発性メモリセル。
- メモリセルの上部電極に正電圧パルスが与えられた場合に高抵抗状態になるようにグラフェン層が形成され、メモリセルの上部電極に負電圧パルスが与えられた場合に低抵抗状態になるようにグラフェン層が形成された請求項1に記載の不揮発性メモリセル。
- グラフェン層が、SiC基板上のエピタキシャルグラフェンである請求項1または2に記載の不揮発性メモリセル。
- グラフェン層が、ドナー分子またはアクセプタ分子によりドープされて、強誘電体層の一の表面上に配置され、電極が、強誘電体層の対向面上に形成される請求項1または2に記載の不揮発性メモリセル。
- バックグラウンドドーピングレベルが、抵抗状態の抵抗変化率を調整するように制御可能な請求項2〜4のいずれかに記載の不揮発性メモリセル。
- 複数の抵抗変化率が、データの複数ビットを表す請求項12に記載の不揮発性メモリセル。
- グラフェン層が、グラフェン酸化物から化学的に誘導される請求項1または2に記載の不揮発性メモリセル。
- グラフェン層が、化学的に変更されたグラフェンである請求項1または2に記載の不揮発性メモリセル。
- グラフェン層が、銅、ニッケル、コバルト、または他の表面上への化学気相堆積(CVD)、低圧CVD、またはプラズマ誘起CVDにより成長され、大規模のグラフェンを可能とする請求項1または2に記載の不揮発性メモリセル。
- グラフェン層が、1層、2層、3層、または他のゲート調整が可能な膜厚である請求項1または2に記載の不揮発性メモリセル。
- グラフェン層が、本来の2次元シート、またはナノスケール寸法にパターニングされたドット、ドットアレイ、ナノワイヤ、またはナノワイヤアレイである請求項1または2に記載の不揮発性メモリセル。
- グラフェン層が、固有のバンドギャップ構造を有し、または横方向の閉じ込め、応力歪、または電場により設計されたバンドギャップを有する請求項1または2に記載の不揮発性メモリセル。
- グラフェン層が、トップゲート、サイドゲート、バックゲート、またはトップゲート、バックゲートおよびサイドゲートの1またはそれ以上の組み合わせである請求項1または2に記載の不揮発性メモリセル。
- メモリセルが、弾力性および/または透明の基板上に形成された請求項1または2に記載の不揮発性メモリセル。
- グラフェン層の配置が、強誘電体層と直接接触、および非常に薄い絶縁層により強誘電体層から分離、から選択された1つである請求項2に記載の不揮発性メモリセル。
- 更に、グラフェン層と強誘電体層の交互のスタックを含み、それぞれの層が分離して接触する請求項1〜22のいずれかに記載の不揮発性メモリセル。
- メモリセルのデータ値を表す、制御可能な抵抗状態を有するグラフェン層を形成する工程と、抵抗状態を制御するための強誘電体層を形成する工程と、を含み、
グラフェン層は、0より大きなバックグラウンドドーピングレベルを含み、
更に、バックグラウンドドーピングレベルを、強誘電体層の分極前に導入する工程を含む不揮発性メモリセルの製造方法。 - 強誘電体層を形成する工程は、導電性基板上の誘電体層の上にグラフェン層を配置する工程と、グラフェン層の上に強誘電体薄膜を形成する工程とを含む請求項24に記載の方法。
- グラフェン層を形成する工程は、SiC基板上にエピタキシャルグラフェンを成長する工程を含む請求項24に記載の方法。
- 強誘電体層を形成する工程は、導電性基板上の誘電体層の上に強誘電体薄膜を形成する工程と、強誘電体薄膜上にグラフェン層を配置する工程とを含む請求項24に記載の方法。
- 強誘電体層を形成する工程は、強誘電体層上にグラフェン層を堆積する工程と、ドナーまたはアクセプタの分子を用いてグラフェン層をドーピングする工程とを含む請求項24に記載の方法。
- 更に、誘電体層の上に上部電極を形成する工程を含む請求項24に記載の方法。
- 更に、強誘電体層と誘電体層との間に、上部電極を形成する工程を含む請求項29に記載の方法。
- グラフェン層を形成する工程は、グラフェン酸化物からグラフェン層を化学的に誘導する工程を含む請求項24に記載の方法。
- グラフェン層を形成する工程は、グラフェン層を形成するためにグラファンを化学的に変形する工程を含む請求項24に記載の方法。
- グラフェン層を形成する工程は、化学気相堆積(CVD)、低圧CVD、またはプラズマ強化CVDを用いて、銅、ニッケル、コバルト、または他の表面上に、グラフェン層を成長し、大規模のグラフェンを可能にする工程を含む請求項24に記載の方法。
- グラフェン層を形成する工程は、1層、2層、3層または他のゲート調整が可能な膜厚としてグラフェン層を形成する工程を含む請求項24に記載の方法。
- グラフェン層を形成する工程は、本来的に2次元のシートとしてグラフェン層を形成する工程、またはナノスケールの大きさのドット、ドットアレイ、ナノワイヤ、またはナノワイヤアレイにパターニングする工程を含む請求項24に記載の方法。
- グラフェン層と強誘電体層は、弾力性のある透明の基板上に形成される請求項24に記載の方法。
- 強誘電体層を形成する工程は、強誘電体層と直接接触するグラフェン層を形成する工程、または非常に薄い絶縁層により強誘電体層からグラフェン層を分離する工程を含む請求項24に記載の方法。
- 更に、グラフェン層と強誘電体層との交互のスタックを形成する工程を含む請求項24に記載の方法。
- グラフェン層は、導電性基板上の、強誘電体層と誘電体層との間に配置され、メモリセルは更に、強誘電体層に電気的に接続された上部電極を含む請求項1に記載の不揮発性メモリセル。
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