WO2010035980A2 - Dispositif de mémoire non volatile et procédés permettant d'enregistrer et de lire des informations sur un dispositif de mémoire non volatile - Google Patents

Dispositif de mémoire non volatile et procédés permettant d'enregistrer et de lire des informations sur un dispositif de mémoire non volatile Download PDF

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WO2010035980A2
WO2010035980A2 PCT/KR2009/005245 KR2009005245W WO2010035980A2 WO 2010035980 A2 WO2010035980 A2 WO 2010035980A2 KR 2009005245 W KR2009005245 W KR 2009005245W WO 2010035980 A2 WO2010035980 A2 WO 2010035980A2
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layer
ferroelectric
memory device
nonvolatile memory
information storage
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PCT/KR2009/005245
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English (en)
Korean (ko)
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WO2010035980A3 (fr
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황철성
이현주
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서울대학교 산학협력단
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Publication of WO2010035980A3 publication Critical patent/WO2010035980A3/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Shaping switching materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/883—Oxides or nitrides
    • H10N70/8833—Binary metal oxides, e.g. TaOx

Definitions

  • the present invention relates to a nonvolatile memory device, and more particularly, to a nonvolatile memory device including a ferroelectric, an information recording method, and an information reading method.
  • DRAM dynamic random access memory
  • phase change random access memory PRAM
  • MRAM magnetic random access memory
  • FRAM random access memory
  • ReRAM resistance change random access memory
  • ferroelectric random access memories have attracted much attention because they have a very simple device structure and a relatively simple manufacturing process compared with other nonvolatile memory devices.
  • the present invention has been made in an effort to provide a new type of nonvolatile memory device having excellent data retention capability and durability even when scaled down, and an information providing method and an information reading method of the nonvolatile memory device.
  • the nonvolatile memory device comprises a lower electrode; It is formed on the lower electrode, made of a ferroelectric, consisting of an information storage layer for storing information according to the polarization of the residual polarization (remanent polarization), and an insulator, when the ferroelectric is polarized reversely exhibits a resistance characteristic, A memory layer having a switching layer exhibiting capacitor characteristics after the ferroelectric is not polarized inverted or the ferroelectric is polarized inverted; And an upper electrode formed on the memory layer.
  • a ferroelectric consisting of an information storage layer for storing information according to the polarization of the residual polarization (remanent polarization), and an insulator, when the ferroelectric is polarized reversely exhibits a resistance characteristic, A memory layer having a switching layer exhibiting capacitor characteristics after the ferroelectric is not polarized inverted or the ferroelectric is polarized inverted; And an upper electrode formed on the memory layer.
  • the information recording method of the nonvolatile memory device is composed of a ferroelectric material and an information storage layer for storing information according to the polarization of the remaining polarization, and an insulator, wherein the ferroelectric is polarized reverse
  • a non-volatile memory device having a memory layer having a switching layer between the two electrodes, wherein the memory layer has a resistance characteristic, and the ferroelectric is not polarized inverted or the ferroelectric is polarized inverted.
  • an information reading method of a nonvolatile memory device is made of a ferroelectric material and an information storage layer for storing information according to the polarization of residual polarization, and an insulator, wherein the ferroelectric is polarized inverted.
  • the nonvolatile memory device is a new concept nonvolatile memory device in which information is stored in an information storage layer made of ferroelectric, and information is read by evaluating characteristics of a switching layer made of an insulator.
  • the nonvolatile memory device has an advantage of writing and reading information by applying a voltage having the same magnitude to a memory layer. In addition, even when the memory layer is scaled down to a thickness of 100 nm or less, a nonvolatile memory device having excellent data retention capability and durability can be obtained.
  • FIG. 1 is a view showing a schematic configuration of a preferred embodiment of a nonvolatile memory device according to the present invention.
  • FIG. 2 illustrates a voltage-polarization hysteresis curve according to a switching layer thickness in a nonvolatile memory device according to the present invention.
  • FIG. 3 is a conceptual diagram illustrating a driving principle of a nonvolatile memory device according to the present invention.
  • FIG. 4 is a diagram illustrating a cycle count-residual polarization graph according to a switching layer thickness in the nonvolatile memory device according to the present invention.
  • FIG. 5 is a diagram illustrating a switching layer thickness-residual polarization graph according to the thickness of the information storage layer 1 second after the ferroelectric constituting the information storage layer completes the polarization inversion in the nonvolatile memory device according to the present invention.
  • FIG. 6 is a diagram illustrating a voltage-polarization hysteresis curve one second after the ferroelectric constituting the information storage layer completes polarization inversion in the nonvolatile memory device according to the present invention.
  • FIG. 1 is a view showing a schematic configuration of a preferred embodiment of a nonvolatile memory device according to the present invention.
  • the nonvolatile memory device 100 includes a lower electrode 110, a memory layer 140, and an upper electrode 150.
  • the lower electrode 110 may be formed of a noble metal such as Pt, Ru and Ir, a heat resistant metal such as Ti, Ta, and W, a heat resistant metal nitride film such as TiN, TaN, and WN, or a RuO 2 , IrO 2, or SrRuO 3 conductive oxide film. Can be.
  • a noble metal such as Pt, Ru and Ir
  • a heat resistant metal such as Ti, Ta, and W
  • a heat resistant metal nitride film such as TiN, TaN, and WN
  • RuO 2 , IrO 2, or SrRuO 3 conductive oxide film can be.
  • Ir is used as the lower electrode 110.
  • the memory layer 140 is formed on the lower electrode 110 and includes an information storage layer 120 and a switching layer 130.
  • the information storage layer 120 stores information according to the polarity of residual polarization, is formed on the lower electrode 110, and is made of a ferroelectric.
  • the information storage layer 120 may be made of a polymer ferroelectric such as polyvinylidene fluoride (PVDF).
  • PVDF polyvinylidene fluoride
  • the data storage layer 120 may be formed of a single film or may be formed of a multilayer film in which various kinds of films are stacked. In this embodiment, a PZT single layer was used.
  • the data storage layer 120 may be formed to a thickness of 10 to 500nm, preferably 50 to 200nm.
  • the data storage layer 120 may be applied by spin coating using a sol-gel method, or may be sputtered, atomic layer deposition (ALD), or chemical vapor deposition (chemical vapor deposition). CVD).
  • heat treatment may be performed to impart crystallinity to the ferroelectric constituting the information storage layer 120.
  • the heat treatment may be performed at a temperature of 400 to 700 ° C. for 1 to 300 minutes, preferably 10 to 50 minutes, more preferably 20 to 40 minutes.
  • the PZT single film used in this embodiment has crystallinity in the (111) direction by such heat treatment.
  • the switching layer 130 exhibits a resistance characteristic when the ferroelectric constituting the information storage layer 120 is polarized inverted, and exhibits a capacitor characteristic after the ferroelectric is not polarized or inverted. ) Is formed on the insulator.
  • the switching layer 130 is preferably made of a material having a larger resistance value than the data storage layer 120.
  • the switching layer 130 is formed of Al 2 O 3 , SiO 2 , Si 3 N 4 , MgO, HfO 2 , TiO 2 , ZrO 2 , Ta 2 O 5 , La 2 O 3 , Cr 2 O 3, and Nb 2 O 5 It may be made of one or more selected from an insulating material having a high electrical resistance and dielectric breakdown voltage.
  • the switching layer 130 may be formed of a single film or may be formed of a multilayer film in which several kinds of films are stacked. In this example, an Al 2 O 3 single layer was used.
  • the switching layer 130 may be formed to have a thickness of 1 to 10 nm, and may be formed by monoatomic deposition or chemical vapor deposition.
  • the upper electrode 150 is formed on the memory layer 140.
  • the upper electrode 150 like the lower electrode 110, is a noble metal such as Pt, Ru and Ir, a heat resistant metal such as Ti, Ta and W, a heat resistant metal nitride film such as TiN, TaN and WN, or RuO 2 , IrO 2 or It may be formed of a conductive oxide film such as SrRuO 3 .
  • FIG. 2 A voltage-polarization hysteresis curve according to the thickness of the switching layer 130 of the memory layer 140 formed as described above is illustrated in FIG. 2.
  • the thickness of the switching layer 130 increases, the residual polarization and the coercive voltage increase.
  • the nonvolatile memory device 100 shown in FIG. 1 stores information in an information storage layer 120 made of ferroelectric, and reads information by evaluating resistance change characteristics of the switching layer 130 made of an insulator. It is a new concept of nonvolatile memory.
  • FIG. 3 is a conceptual diagram illustrating a driving principle of a nonvolatile memory device according to the present invention.
  • the lower electrode 110 and the upper electrode 150 are made of a conductive material, the lower electrode 110 and the upper electrode 150 serve as a small resistance value.
  • the information storage layer 120 is made of a ferroelectric, the characteristics of the capacitor appears.
  • the switching layer 130 is not as simple as this. In some cases, the switching layer 130 may exhibit characteristics of a resistor and characteristics of a capacitor. This is related to the polarization switching of the ferroelectric constituting the information storage layer 120.
  • the switching layer 130 is made of an insulator and thus exhibits capacitor characteristics.
  • polarization inversion occurs in the ferroelectric constituting the information storage layer 120.
  • the polarization of the polarization of the ferroelectric is reversed to the opposite polarity.
  • the capacitance value of the ferroelectric since the increase and decrease of the polarization according to the voltage near the constant voltage is very large, the capacitance value of the ferroelectric also has a very large value.
  • the data storage layer 120 and the switching layer 130 are in the form of capacitors connected in series, and the capacitors connected in series are inversely proportional to the capacitance value, most of the voltages applied to the memory layer 140 are switching layers. Is applied to 130. In this case, the magnitude of the voltage applied to the switching layer 130 is sufficient to allow electrons to tunnel through the switching layer 130.
  • the switching layer 130 is an Al 2 O 3 film and the information storage layer 120 is a PZT film
  • the voltage applied to the Al 2 O 3 film when the PZT film is polarized inverted is about 11 MV / cm so that Al It is much larger than 1 to 2 MV / cm, which is the tunneling threshold voltage of 2 O 3 .
  • the switching layer 130 exhibits resistance characteristics. After the polarization inversion occurs, the capacitance value of the ferroelectric constituting the information storage layer 120 again becomes small, so that the voltage applied to the switching layer 130 decreases, so that the switching layer 130 exhibits capacitor characteristics again.
  • the switching layer 130 exhibits resistance characteristics when the ferroelectric constituting the information storage layer 120 is polarized inverted, and exhibits capacitor characteristics after the ferroelectric constituting the information storage layer 120 is not polarized or polarized inverted. do. That is, the resistance of the switching layer 130 becomes small when the ferroelectric constituting the information storage layer 120 is polarized inverted, and the resistance becomes large when the ferroelectric is not polarized inverted.
  • the nonvolatile memory device 100 can record and read information using these characteristics.
  • a material used for storing information and a material used for reading information are different.
  • the information is stored according to the polarity of the remaining polarization of the ferroelectric constituting the information storage layer 120 similarly to the ferroelectric memory. Therefore, in order to record information in the nonvolatile memory device 100 according to the present invention, by applying a voltage equal to or greater than the constant voltage to the memory layer 140 by changing the polarity of the residual polarization of the ferroelectric constituting the information storage layer 120 Is done.
  • the reading of the information is performed by changing the magnitude of the resistance of the insulator constituting the switching layer 130 similarly to the resistance change memory device.
  • the polarization of the residual polarization of the ferroelectric constituting the information storage layer 120 when a voltage having a positive sign and larger than the constant voltage is applied to the memory layer 140, the information is displayed. Different physical quantities are measured according to the polarity of the residual polarization of the ferroelectric constituting the storage layer 120. For example, when the polarization of the residual polarization of the ferroelectric constituting the information storage layer 120 is negative (-), the switching layer 130 exhibits resistance characteristics because the ferroelectric is polarized reversed by applying a positive voltage. . In addition, when the polarization of the residual polarization of the ferroelectric constituting the information storage layer 120 is positive (+), even if a positive voltage is applied, the ferroelectric does not reverse polarization, so the switching layer 130 exhibits capacitor characteristics.
  • the characteristics of the switching layer 130 are different according to the polarization of the residual polarization of the ferroelectric constituting the information storage layer 120, it is possible to read the information by measuring the physical quantity such a difference.
  • the physical quantity may include things such as the amount of current flowing through the memory layer, the amount of change in the current, and the resistance of the memory layer. Can be easily read.
  • the resistance of the information storage layer 120 is smaller than the resistance of the switching layer 130. It is preferable to have.
  • FIG. 4 is a diagram illustrating a cycle number-residual polarization graph according to the thickness of a switching layer in the nonvolatile memory device according to the present invention.
  • the PZT film having a thickness of 150 nm was used as the data storage layer 120, and the Al 2 O 3 film was used as the switching layer 130.
  • the lower electrode 110 is Ir, and the upper electrode 150 is Pt.
  • the graph denoted by reference numeral 410 represents a case where the switching layer 130 is absent, and the graph denoted by reference numeral 420 illustrates a case where the thickness of the switching layer 130 is 1 nm.
  • the graph denoted by reference numeral 430 illustrates a case where the thickness of the switching layer 130 is 2 nm, and the graph denoted by reference numeral 440 illustrates a case where the thickness of the switching layer 130 is 3 nm.
  • the residual polarization of the ferroelectric constituting the information storage layer 120 is reduced from the beginning, compared to the initial stage before 100 cycles.
  • the residual polarization is reduced by about one third.
  • the thickness of the switching layer 130 increases to 1 nm (- ⁇ -, 420) and 2 nm (- ⁇ -, 430)
  • the characteristics of the residual polarization of the ferroelectric constituting the information storage layer 120 gradually increases depending on the number of cycles. Will be excellent.
  • the thickness of the switching layer 130 is 3nm (- ⁇ -.440)
  • the thickness of the switching layer 130 is further increased, it was confirmed that residual polarization characteristics without a significant difference from the initial stage appear up to 10 7 cycles.
  • FIG. 5 is a diagram illustrating a switching layer thickness-residual polarization graph according to the thickness of the information storage layer 1 second after the ferroelectric constituting the information storage layer completes the polarization inversion in the nonvolatile memory device according to the present invention.
  • a PZT film was used as the information storage layer 120
  • an Al 2 O 3 film was used as the switching layer 130.
  • the lower electrode 110 is Ir
  • the upper electrode 150 is Pt.
  • the graph denoted by reference numeral 510 illustrates a case where the thickness of the information storage layer 130 is 50 nm
  • the graph denoted by reference numeral 520 illustrates a case where the thickness of the information storage layer 130 is 150 nm.
  • FIG. 6 is a diagram illustrating a voltage-polarization hysteresis curve after 1 second of a ferroelectric constituting the information storage layer after polarization inversion in the nonvolatile memory device according to the present invention.
  • the PZT film having a PZT 150 nm thickness was used as the data storage layer 120, and the Al 2 O 3 film was used as the switching layer 130.
  • the lower electrode 110 is Ir, and the upper electrode 150 is Pt.
  • the graph denoted by reference numeral 610 illustrates a case in which the switching layer 130 is absent, and the graph denoted by reference numeral 620 illustrates a case in which the thickness of the switching layer 130 is 2 nm.
  • the switching layer 130 when the switching layer 130 is absent (610), it can be seen that the voltage-polarization hysteresis curve has a severe discontinuity. In contrast, when the 2 nm-thick switching layer 130 is present (620), the discontinuity of the voltage-polarization hysteresis curve is considerably slowed.
  • the voltage-polarization hysteresis curve is discontinuous after the ferroelectric constituting the information storage layer 120 is polarized inverted due to the depolarization effect. If the depolarization effect is intensified, the data holding capacity is lowered, which increases the risk of misreading information.
  • the switching layer 130 is very useful in preventing the depolarization effect. This is because the charge trapped at the interface between the switching layer 130 and the information storage layer 120 prevents depolarization of the ferroelectric constituting the information storage layer 120. Can be.
  • the depolarization voltage is about 11V. This degree of voltage is a very large voltage, and rarely occurs when a voltage of this magnitude is accidentally applied, so the information stored once is kept constant.
  • the nonvolatile memory device 100 maintains excellent durability and data retention even when scaled down, and is a new concept of nonvolatile memory device in which information storage areas and information reading areas are divided. .
  • there is little concern about misreading when reading information and there is an advantage that it is not greatly influenced by the ambient temperature.
  • the nonvolatile memory device 100 according to the present invention seems to be similar to a ferroelectric memory device using a conventional charge storage method, but is completely different in terms of its operation principle.
  • the capacitance of the ferroelectric becomes small as the device scales down, thereby degrading the charge storage capability and the performance of the transistor.
  • the conventional ferroelectric memory device has a limit to scale down.
  • the nonvolatile memory device 100 according to the present invention does not read charge stored in the ferroelectric constituting the information storage layer 120 when reading information, but is derived from the power supply of the system according to the resistance change of the switching layer 130. Because it detects a change in the amount of current, it has a completely different operating principle from the conventional ferroelectric memory device.
  • the nonvolatile memory device 100 according to the present invention has an advantage of minimizing device degradation due to scale down.
  • the nonvolatile memory device 100 according to the present invention has the following advantages compared to nonvolatile memory devices such as phase change memory devices or resistance change memory devices.
  • nonvolatile memory devices such as phase change memory devices or resistance change memory devices.
  • phase-transition memory device it is extremely difficult to secure durability because the variable phase transition of the material using high temperature / quenching is used.
  • the nonvolatile memory device 100 according to the present invention does not require any phase transition, durability can be ensured as described above.
  • the nonvolatile memory device 100 according to the present invention uses a polarization inversion and a tunneling phenomenon of a thin insulating layer, which are inherent properties of ferroelectric materials. It is easy to secure the castle. Therefore, the nonvolatile memory device 100 according to the present invention corresponds to an excellent nonvolatile memory device having the advantages that no conventional nonvolatile memory device has.
  • the memory layer 140 may have a structure in which the switching layer 130 and the information storage layer 120 are sequentially stacked, and each of the information storage layer 120 and the switching layer 130 may have two or more stacked memories. Layer 140 may be formed. Even when the memory layer 140 is configured in this manner, the information storage layer 120 serves to store information, and the switching layer 130 plays a role of reading information, similar to that described with reference to FIG. 1.

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Abstract

La présente invention concerne un dispositif de mémoire non volatile et des procédés permettant d'enregistrer et de lire les informations sur le dispositif de mémoire non volatile. Le dispositif de mémoire non volatile selon la présente invention comprend une couche mémoire placée entre les électrodes inférieure et supérieure. La couche mémoire constituée d'un matériau ferro-électrique comprend: une couche de stockage d'informations qui stocke les informations selon la polarité de la polarisation rémanente; et une couche de commutation qui est constituée d'un isolant et qui procure une résistance lors de la commutation de la polarisation du matériau ferro-électrique et qui agit en tant que condensateur du matériau ferro-électrique après la commutation ou non de la polarisation du matériau ferro-électrique. Dans le dispositif de mémoire non volatile selon l'invention, lequel dispositif est un nouveau dispositif de mémoire non volatile conceptuel, les informations sont stockées dans la couche de stockage d'informations réalisée à partir d'un matériau ferro-électrique puis elles sont lues par évaluation des caractéristiques de la couche de commutation constituée de l'isolant. En outre, le dispositif de mémoire non volatile est véritablement durable et il présente une capacité élevée pour les données bien que l'épaisseur de la couche mémoire soit inférieure à 100nm.
PCT/KR2009/005245 2008-09-26 2009-09-15 Dispositif de mémoire non volatile et procédés permettant d'enregistrer et de lire des informations sur un dispositif de mémoire non volatile WO2010035980A2 (fr)

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KR1020080094502A KR101021973B1 (ko) 2008-09-26 2008-09-26 비휘발성 기억소자 및 비휘발성 기억소자의 정보기록방법과정보판독방법
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037437A (zh) * 2017-06-08 2018-12-18 爱思开海力士有限公司 阻变存储器件
FR3090196A1 (fr) * 2018-12-18 2020-06-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’une memoire ferroelectrique et procede de co-fabrication d’une memoire ferroelectrique et d’une memoire resistive

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10163977B1 (en) 2017-03-22 2018-12-25 Micron Technology, Inc. Chalcogenide memory device components and composition
US10727405B2 (en) 2017-03-22 2020-07-28 Micron Technology, Inc. Chalcogenide memory device components and composition
KR20190067668A (ko) * 2017-12-07 2019-06-17 에스케이하이닉스 주식회사 저항 변화 소자
KR102188583B1 (ko) * 2018-12-03 2020-12-09 마이크론 테크놀로지, 인크 칼코게나이드 메모리 디바이스 컴포넌트들 및 조성물
US20220140146A1 (en) * 2020-10-30 2022-05-05 Applied Materials, Inc. Ferroelectric devices enhanced with interface switching modulation

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067828A (ko) * 1996-03-27 1997-10-13 김광호 누설 전류를 이용한 강유전체 메모리
KR100355267B1 (en) * 2000-12-27 2002-10-11 Korea Electronics Telecomm Method for etching oxide material and metal multi thin films and method for fabricating field effect transistor by using the same
KR100430656B1 (ko) * 2000-07-27 2004-05-10 미쓰비시덴키 가부시키가이샤 비휘발성 반도체 기억 장치
KR20070026258A (ko) * 2005-09-05 2007-03-08 세이코 엡슨 가부시키가이샤 복합 산화물 적층체, 복합 산화물 적층체의 제조 방법, 및장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4785180B2 (ja) 2004-09-10 2011-10-05 富士通セミコンダクター株式会社 強誘電体メモリ、多値データ記録方法、および多値データ読出し方法
KR100769547B1 (ko) 2005-12-05 2007-10-23 한국전자통신연구원 유전체 박막을 포함하는 메모리 소자 및 그 제조방법
KR100744566B1 (ko) 2006-09-08 2007-08-01 한국전자통신연구원 금속산화물을 이용한 게이트 스택, 이를 포함하는트랜지스터 일체형 메모리 소자 및 그 메모리소자의구동방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR970067828A (ko) * 1996-03-27 1997-10-13 김광호 누설 전류를 이용한 강유전체 메모리
KR100430656B1 (ko) * 2000-07-27 2004-05-10 미쓰비시덴키 가부시키가이샤 비휘발성 반도체 기억 장치
KR100355267B1 (en) * 2000-12-27 2002-10-11 Korea Electronics Telecomm Method for etching oxide material and metal multi thin films and method for fabricating field effect transistor by using the same
KR20070026258A (ko) * 2005-09-05 2007-03-08 세이코 엡슨 가부시키가이샤 복합 산화물 적층체, 복합 산화물 적층체의 제조 방법, 및장치

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037437A (zh) * 2017-06-08 2018-12-18 爱思开海力士有限公司 阻变存储器件
FR3090196A1 (fr) * 2018-12-18 2020-06-19 Commissariat A L'energie Atomique Et Aux Energies Alternatives Procede de fabrication d’une memoire ferroelectrique et procede de co-fabrication d’une memoire ferroelectrique et d’une memoire resistive
EP3671844A1 (fr) * 2018-12-18 2020-06-24 Commissariat à l'Energie Atomique et aux Energies Alternatives Procede de fabrication d'une memoire ferroelectrique et procede de co-fabrication d'une memoire ferroelectrique et d'une memoire resistive
US11145663B2 (en) 2018-12-18 2021-10-12 Commissariat A L'energie Atomique Et Aux Energies Alternatives Method for fabricating a ferroelectric memory and method for co-fabrication of a ferroelectric memory and of a resistive memory

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