WO2010023733A1 - 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 - Google Patents
圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 Download PDFInfo
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- WO2010023733A1 WO2010023733A1 PCT/JP2008/065252 JP2008065252W WO2010023733A1 WO 2010023733 A1 WO2010023733 A1 WO 2010023733A1 JP 2008065252 W JP2008065252 W JP 2008065252W WO 2010023733 A1 WO2010023733 A1 WO 2010023733A1
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- base substrate
- electrode
- substrate wafer
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- piezoelectric vibrator
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention relates to a surface mount type (SMD) piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between two bonded substrates, and a piezoelectric vibrator for manufacturing the piezoelectric vibrator. And an oscillator having a piezoelectric vibrator, an electronic device, and a radio timepiece.
- SMD surface mount type
- a piezoelectric vibrator using a crystal or the like as a timing source such as a time source or a control signal, a reference signal source, or the like is used in a mobile phone or a portable information terminal device.
- Various piezoelectric vibrators of this type are known, and one of them is a surface-mount type piezoelectric vibrator.
- this type of piezoelectric vibrator a three-layer structure type in which a piezoelectric substrate on which a piezoelectric vibrating piece is formed is joined so as to be sandwiched from above and below by a base substrate and a lid substrate is known. In this case, the piezoelectric vibrator is housed in a cavity (sealed chamber) formed between the base substrate and the lid substrate.
- a two-layer structure type has been developed instead of the three-layer structure type described above.
- This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly bonded, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates.
- This two-layer structure type piezoelectric vibrator is excellent in that it can be made thinner than the three-layer structure, and is preferably used.
- a conductive member formed so as to penetrate the base substrate is used to conduct the piezoelectric vibrating piece and the external electrode formed on the base substrate. Piezoelectric vibrators are known (see Patent Document 1 and Patent Document 2).
- the piezoelectric vibrator 200 includes a base substrate 201 and a lid substrate 202 that are anodically bonded to each other via a bonding film 207, and a cavity C formed between the substrates 201 and 202. And a piezoelectric vibrating piece 203 sealed inside.
- the piezoelectric vibrating piece 203 is, for example, a tuning fork type vibrating piece, and is mounted on the upper surface of the base substrate 201 in the cavity C via the conductive adhesive E.
- the base substrate 201 and the lid substrate 202 are insulating substrates made of, for example, ceramic or glass.
- a through hole 204 that penetrates the substrate 201 is formed in the base substrate 201 of both the substrates 201 and 202.
- a conductive member 205 is embedded in the through hole 204 so as to close the through hole 204.
- the conductive member 205 is electrically connected to the external electrode 206 formed on the lower surface of the base substrate 201 and is electrically connected to the piezoelectric vibrating piece 203 mounted in the cavity C.
- the conductive member is formed by filling a through-hole with a conductive paste (Ag paste, Au—Sn paste, etc.).
- a conductive paste Au paste, Au—Sn paste, etc.
- the conductive paste is stably sealed in the through-hole in order to securely close the through-hole and maintain the airtightness in the cavity and to ensure a reliable electrical connection between the piezoelectric vibrating piece and the external electrode. Need to be filled.
- the formation of through holes is a very important operation.
- a method of forming a through hole there are a method of mechanically drilling using a drill, a method of drilling by irradiating a laser beam, a method of drilling using a sandblast method, etc.
- a through-hole using a drill
- the formation of the through-hole is affected by the state of the drill (sharpness, etc.), and therefore, quality tends to vary.
- the inner peripheral surface is easily roughened, and it is difficult to finish the surface flat. Therefore, it is difficult to stably fill the conductive paste, and the airtight reliability is poor.
- a plurality of through holes are usually formed at the stage of the wafer, when a drill is used, it takes much time and is not efficient.
- the through hole is formed using laser light
- a work-affected layer is formed on the inner peripheral surface under the influence of the laser light, which is not a preferable method.
- the inner peripheral surface is apt to be rough due to the manufacturing method, and it is difficult to finish the flat surface. Therefore, it is difficult to stably fill the conductive paste, and the airtight reliability is poor.
- Patent Document 1 As another method of forming a through hole, as described in Patent Document 1, a method of forming a through hole by press molding using a mold while heating a base substrate is also known. It has been. According to this method, it is possible to efficiently form through holes with uniform quality at a time, and to finish the inner peripheral surface into a flat surface. Therefore, the conductive paste can be stably filled and airtight reliability can be ensured. Therefore, this method is superior to the formation of the through hole as compared with the other methods described above. JP 2002-124845 A JP 2006-279872 A
- the pin of the mold for forming the through hole is difficult to be removed, and the pin may be deformed or broken. Further, since the pin is difficult to be removed, there is a possibility that a load is applied to the through hole side and the quality is deteriorated such that the inner peripheral surface of the through hole is damaged.
- the pins of the mold are formed in a tapered shape that gradually decreases in diameter toward the tip for easy pressing, the through hole is also formed in a tapered shape. Therefore, the diameter of the opening of the through hole is inevitably large as compared with the case of the straight hole. Therefore, it is difficult to reduce the size of the through electrode itself.
- further miniaturization is required for the piezoelectric vibrators mounted on these various electronic devices.
- it becomes difficult to reduce the size of the through electrode itself it becomes difficult to further reduce the size of the piezoelectric vibrator, and thus the above-described needs cannot be met.
- the present invention has been made in view of such circumstances, and its purpose is that it can be manufactured by press molding without affecting the pins of the mold, and is highly airtight and downsized. Another object of the present invention is to provide a piezoelectric vibrator having through electrodes. Another object of the present invention is to provide an oscillator, an electronic device and a radio timepiece having the piezoelectric vibrator, and a manufacturing method for producing the piezoelectric vibrator.
- the present invention provides the following means in order to solve the problems and achieve the object.
- a piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between a base substrate and a lid substrate bonded to each other is provided. And a plurality of wafers for a lid substrate at the same time, wherein the taper has a tapered shape that protrudes toward the lower die and has a taper angle within a range of 15 ° to 20 °.
- a setting step of setting the base substrate wafer between the lower die and the upper die and heating the base substrate wafer to a predetermined temperature for softening The lower mold and the upper mold are pressed in a state of being pressed, a press process for forming a through hole in the base substrate wafer using the pins, and the base substrate wafer is cooled and solidified, and then the through hole is formed.
- the base substrate so as to be electrically connected to the through electrode and a firing step of forming a through electrode having a tapered cross section by baking and curing the conductive paste at a predetermined temperature
- a mold consisting of a lower mold and an upper mold having pins protruding downward.
- the upper pin has a taper-shaped cross section whose diameter gradually decreases toward the tip, and the taper angle is within a range of 15 ° to 20 °.
- a base substrate wafer is set between the lower mold and the upper mold.
- the base substrate wafer is press-molded with a lower mold and an upper mold in a state where the base substrate wafer is heated to a predetermined temperature and softened. Accordingly, a through hole having a tapered cross section can be formed in the base substrate wafer using the upper pins.
- the base substrate wafer is cooled and solidified, and then the lower mold and the upper mold are removed. Then, the through hole of the base substrate wear is filled with a conductive paste to close the through hole.
- the embedded conductive paste is baked and cured at a predetermined temperature. By performing this firing step, a through electrode having a tapered cross section penetrating through the base substrate wafer can be formed.
- a mounting step is performed in which a piezoelectric vibrating piece is joined to the upper surface of the base substrate wafer so as to be electrically connected to the through electrode.
- the base substrate wafer and the lid substrate wafer are overlaid.
- the piezoelectric vibrating piece is housed in a cavity formed between the two wafers.
- the stacked wafers are bonded together.
- an external electrode forming step is performed in which an external electrode is formed on the lower surface of the base substrate wafer so as to be electrically connected to the through electrode.
- the piezoelectric vibrating piece is electrically connected to the external electrode through the through electrode. Therefore, the piezoelectric vibrating piece sealed in the cavity can be operated using the external electrode.
- a cutting process is performed in which the bonded base substrate wafer and lid substrate wafer are cut to make a plurality of piezoelectric vibrators into pieces.
- the through-hole is formed by press molding using a lower mold and an upper mold, the through-hole can be formed efficiently and uniformly at a time. Moreover, since the inner peripheral surface of the through hole can be finished to a flat surface, the conductive paste can be filled stably and the airtightness of the through electrode can be improved.
- the upper pin has a taper angle of 15 ° or more, the through hole also has a taper angle of 15 ° or more. Therefore, after the base substrate wafer is cooled and solidified, the lower mold and the upper mold can be easily removed without being caught by pins. Therefore, it is possible to prevent the pin from being deformed or broken due to an excessive force applied to the pin.
- the pin can be pulled out without being caught, the inner peripheral surface of the through hole is hardly damaged. Therefore, the quality of the through hole can be improved and the airtightness can be improved as compared with the conventional case. Therefore, the reliability of the operation of the piezoelectric vibrating piece can be improved.
- the through hole similarly has a taper angle of 20 ° or less. Therefore, the difference between the diameter of the opening exposed on the upper surface side of the base substrate wafer and the diameter of the opening exposed on the lower surface side can be minimized. Therefore, the through electrode itself can be reduced in size. Therefore, the size of the piezoelectric vibrator itself can be made smaller than before.
- the piezoelectric vibrator according to the present invention includes a base substrate and a lid substrate that are bonded to each other and in which a cavity is formed, a piezoelectric vibrating piece mounted on the base substrate in the cavity, and the base substrate
- An external electrode formed on the lower surface of the substrate and penetrating the base substrate, and maintaining a hermeticity in the cavity, and including a through electrode for electrically connecting the piezoelectric vibrating piece and the external electrode.
- the electrode is formed by press molding with a molding die having a pin, and the through-hole having a tapered cross section in which the taper angle is within the range of 15 ° or more and 20 ° or less, and the conductive paste cured after being filled in the through-hole And.
- the piezoelectric vibrator described in the above (2) is electrically connected to an integrated circuit as an oscillator.
- the piezoelectric vibrator described in the above (2) is electrically connected to the timing unit.
- the piezoelectric vibrator described in the above (2) is electrically connected to the filter unit.
- the quality and size are similarly reduced. Can be achieved.
- the piezoelectric vibrator of the present invention since it has a through electrode that is more airtight and smaller than the conventional one, the operation reliability is improved and the quality can be improved. In addition, the size can be reduced.
- through holes can be formed with a uniform quality at a time by press molding without affecting the pins of the molding die, so that the manufacturing is more efficient than before. can do. Therefore, it can also lead to cost reduction.
- the electronic device and the radio timepiece according to the present invention it is possible to achieve high quality and downsizing similarly.
- FIG. 1 is a diagram showing an embodiment of the present invention, and is an external perspective view of a piezoelectric vibrator.
- FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1 and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG.
- FIG. 4 is an exploded perspective view of the piezoelectric vibrator shown in FIG.
- FIG. 5 is a top view of the piezoelectric vibrating piece constituting the piezoelectric vibrator shown in FIG. 6 is a bottom view of the piezoelectric vibrating piece shown in FIG.
- FIG. 7 is a cross-sectional view taken along the line BB shown in FIG.
- FIG. 8 is an enlarged view of the conductive paste that is the source of the through electrode shown in FIG. 3.
- FIG. 9 is a flowchart showing a flow of manufacturing the piezoelectric vibrator shown in FIG.
- FIG. 10 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG. 9, and is a diagram illustrating a state in which a recess is formed in a lid substrate wafer that is a base of the lid substrate.
- FIG. 11 is a diagram showing one process when manufacturing the piezoelectric vibrator according to the flowchart shown in FIG.
- FIG. 12 is a diagram showing a state in which the base substrate wafer is pressed by the lower die and the upper die after the state shown in FIG.
- FIG. 13 is a diagram showing a state in which a pair of through holes are formed in the base substrate wafer after the state shown in FIG. 14 is a cross-sectional view taken along the line CC in FIG.
- FIG. 15 is a diagram illustrating a state in which the through electrode is formed by filling the through hole with a conductive paste after the state illustrated in FIG. 14 and then firing the conductive paste.
- FIG. 12 is a diagram showing a state in which the base substrate wafer is pressed by the lower die and the upper die after the state shown in FIG.
- FIG. 13 is a diagram showing a state in which a pair of through holes are formed in the base substrate wafer after the state shown in FIG. 14 is a cross-sectional view taken along the line CC in FIG.
- FIG. 15 is a diagram illustrating a state in which the through electrode is formed by fill
- FIG. 16 is a diagram illustrating a state in which the volume of the conductive paste is reduced by firing.
- FIG. 17 is a diagram showing a state in which both surfaces of the base substrate wafer are polished by the reduced amount of the conductive paste.
- FIG. 18 is a diagram showing a state after polishing.
- FIG. 19 is a view showing a state in which the bonding film and the routing electrode are patterned on the upper surface of the base substrate wafer after the state shown in FIG.
- FIG. 20 is an overall view of the base substrate wafer in the state shown in FIG.
- FIG. 21 is a diagram illustrating a process of manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG.
- FIG. 22 is a diagram illustrating an embodiment of the present invention, and is a configuration diagram of an oscillator.
- FIG. 23 is a diagram illustrating an embodiment of the present invention and is a configuration diagram of an electronic device.
- FIG. 24 is a diagram showing an embodiment of the present invention and is a configuration diagram of a radio timepiece.
- FIG. 25 is a process diagram showing a modification of the method for manufacturing a piezoelectric vibrator according to the present invention.
- 26 is a diagram showing the internal configuration of a conventional piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed. 27 is a cross-sectional view of the piezoelectric vibrator shown in FIG.
- the piezoelectric vibrator 1 of the present embodiment is formed in a box shape in which a base substrate 2 and a lid substrate 3 are laminated in two layers as shown in FIGS.
- This is a surface-mounted piezoelectric vibrator 1 in which a vibrating piece 4 is housed.
- FIG. 4 illustration of an excitation electrode 13, an extraction electrode 16, a mount electrode 14, and a weight metal film 17, which will be described later, is omitted for easy understanding of the drawing.
- the piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed of a piezoelectric material such as crystal, lithium tantalate, or lithium niobate, and when a predetermined voltage is applied. It vibrates.
- the piezoelectric vibrating reed 4 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions.
- An excitation electrode 13 is formed on the outer surface of 10 and 11 to vibrate the pair of vibrating arm portions 10 and 11, and a mount electrode 14 is electrically connected to the excitation electrode 13.
- the piezoelectric vibrating reed 4 of the present embodiment includes groove portions 15 formed along the longitudinal direction of the vibrating arm portions 10 and 11 on both main surfaces of the pair of vibrating arm portions 10 and 11.
- the groove portion 15 is formed from the proximal end side of the vibrating arm portions 10 and 11 to the vicinity of the middle.
- the excitation electrode 13 is an electrode that vibrates the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. It is formed by patterning in a separated state. Specifically, as shown in FIG. 7, one excitation electrode 13 is mainly formed on the groove portion 15 of one vibration arm portion 10 and on both side surfaces of the other vibration arm portion 11. Excitation electrodes 13 are mainly formed on both side surfaces of one vibrating arm portion 10 and on a groove portion 15 of the other vibrating arm portion 11.
- the excitation electrode 13 is electrically connected to the mount electrode 14 via the extraction electrode 16 on both main surfaces of the base portion 12. A voltage is applied to the piezoelectric vibrating reed 4 via the mount electrode 14.
- the excitation electrode 13, the mount electrode 14, and the extraction electrode 16 described above are formed of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al), or titanium (Ti). It is.
- the weight metal film 17 for adjusting (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 10 and 11.
- the weight metal film 17 is divided into a coarse adjustment film 17a used when the frequency is roughly adjusted and a fine adjustment film 17b used when the frequency is finely adjusted.
- the frequency of the pair of vibrating arm portions 10 and 11 can be kept within the range of the nominal frequency of the device.
- the piezoelectric vibrating reed 4 configured as described above is bump-bonded to the upper surface of the base substrate 2 using bumps B such as gold as shown in FIGS. More specifically, a pair of mount electrodes 14 are bump-bonded to each other on two bumps B formed on a routing electrode 23 described later. Thereby, the piezoelectric vibrating reed 4 is supported in a state of floating from the upper surface of the base substrate 2, and the mount electrode 14 and the lead-out electrode 23 are electrically connected to each other.
- the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape as shown in FIGS.
- a rectangular recess 3 a in which the piezoelectric vibrating reed 4 is accommodated is formed on the lower surface side of the lid substrate 3 (the bonding surface side to which the base substrate 2 is bonded).
- the concave portion 3 a is a cavity concave portion 3 a that becomes a cavity C that accommodates the piezoelectric vibrating reed 4 when the two substrates 2 and 3 are overlapped.
- the lid substrate 3 is anodically bonded to the base substrate 2 with the recess 3a facing the base substrate 2 side.
- the base substrate 2 is a transparent insulating substrate made of a glass material, for example, soda lime glass, like the lid substrate 3, and has a size that can be superimposed on the lid substrate 3 as shown in FIGS. It is formed in a plate shape.
- the base substrate 2 is formed with a pair of through holes (through holes) 20 penetrating the base substrate 2. At this time, the pair of through holes 20 are formed so as to be accommodated in the cavity C. More specifically, one through hole 20 is positioned on the base 12 side of the mounted piezoelectric vibrating reed 4, and the other through hole 20 is positioned on the distal end side of the vibrating arm portion 11.
- the through hole 20 of the present embodiment is formed by press molding using a molding die 30 having a pin 33 described later, and the diameter gradually increases toward the lower surface of the base substrate 2 as shown in FIG.
- the cross section is tapered.
- the taper angle ⁇ is in a range of 15 ° to 20 °.
- a pair of through electrodes 21 are formed so as to fill the through holes 20.
- These through electrodes 21 are formed by curing the conductive paste P shown in FIG. 8 including a plurality of metal fine particles P1, and completely close the through holes 20 to maintain airtightness in the cavity C. It plays the role of making the external electrode 24 and the routing electrode 23 described later conductive. In the conductive paste P, electrical conductivity is ensured because the plurality of metal fine particles P1 are in contact with each other.
- a conductive film for example, aluminum is used to bond a bonding film 22 for anodic bonding
- a pair of routing electrodes 23 are patterned.
- the bonding film 22 is formed along the periphery of the base substrate 22 so as to surround the periphery of the recess 3 a formed in the lid substrate 3.
- the pair of lead-out electrodes 23 are patterned so as to electrically connect the pair of through electrodes 21 and the pair of mount electrodes 14 of the piezoelectric vibrating piece 4. More specifically, as shown in FIGS.
- the one lead-out electrode 23 is formed right above the one through electrode 21 so as to be positioned directly below the base 12 of the piezoelectric vibrating piece 4.
- the other lead electrode 23 is routed from the position adjacent to the one lead electrode 23 along the vibrating arm portion 11 to the distal end side of the vibrating arm portion 11, and then positioned directly above the other through electrode 21. It is formed to do.
- a bump B is formed on the pair of routing electrodes 23, and the piezoelectric vibrating reed 4 is mounted using the bump B. Thereby, the piezoelectric vibrating reed 4 is electrically connected to the through electrode 21 via the bump B and the lead-out electrode 23. Further, as shown in FIGS. 1, 3, and 4, external electrodes 24 that are electrically connected to the through electrodes 21 are formed on the lower surface of the base substrate 2. As a result, the piezoelectric vibrating reed 4 is electrically connected to the external electrode 24 through the through electrode 21.
- a predetermined drive voltage is applied to the external electrode 24 formed on the base substrate 2.
- an electric current can be sent through the excitation electrode 13 of the piezoelectric vibrating piece 4, and the pair of vibrating arm portions 10 and 11 can be vibrated at a predetermined frequency in a direction in which the pair of vibrating arm portions 10 and 11 are approached and separated.
- the vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a control signal timing source, a reference signal source, and the like.
- the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 4 shown in FIGS. 5 to 7 (S10). Specifically, a quartz Lambert rough is first sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and roughly processed, and then the work-affected layer is removed by etching, and then mirror polishing such as polishing is performed to obtain a wafer having a predetermined thickness.
- the wafer is patterned with the outer shape of the piezoelectric vibrating reed 4 by photolithography technology, and a metal film is formed and patterned, and the excitation electrode 13 and the extraction electrode 13 are extracted.
- An electrode 16, a mount electrode 14, and a weight metal film 17 are formed. Thereby, the some piezoelectric vibrating piece 4 is producible.
- the resonance frequency is coarsely adjusted. This is performed by irradiating the coarse adjustment film 17a of the weight metal film 17 with a laser beam to evaporate a part thereof and changing the weight. As a result, the frequency can be within a slightly wider range than the target nominal frequency. Note that the fine adjustment to adjust the resonance frequency with higher accuracy and finally drive the frequency within the range of the nominal frequency is performed after mounting. This will be described later.
- a first wafer manufacturing process is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured up to a state immediately before anodic bonding (S20).
- a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like ( S21).
- a recess 3a forming step is performed for forming a plurality of recesses 3a for the cavity C in the matrix direction on the bonding surface of the lid substrate wafer 50 (S22).
- the recess 3 a may be formed by etching the lid substrate wafer 50. Moreover, you may form the recessed part 3a by pressing from the upper and lower sides, heating the lid substrate wafer 50 using a jig
- a second wafer manufacturing process is performed in which the base substrate wafer 40 to be the base substrate 2 is manufactured up to the state immediately before anodic bonding (S30).
- a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).
- a through electrode forming step (S32) for forming a plurality of pairs of through electrodes 21 penetrating the base substrate wafer 40 is performed.
- This through electrode forming process is a process including a setting process (S32a), a pressing process (S32b), and a firing process (S32c).
- S32a setting process
- S32b pressing process
- S32c firing process
- a forming die 30 including a lower die 31 and an upper die 32 having a pin 33 protruding toward the lower die 31 is prepared.
- the pin 33 of the upper die 32 is prepared so as to have a tapered cross section whose diameter gradually decreases toward the tip, and the taper angle ⁇ falls within the range of 15 ° to 20 °.
- positioning pins 32 a that enter the positioning holes 31 a provided in the lower die 31 are attached to the upper die 32.
- the base substrate wafer 40 is set between the lower die 31 and the upper die 32. At this time, an insertion hole 40a through which the positioning pin 32a is inserted is opened in the base substrate wafer 40, and the insertion hole 40a is set so as to face the positioning hole 31a.
- this setting step (S32a) After this setting step (S32a) is completed, the whole is placed in a furnace to heat and soften the base substrate wafer 40 to a predetermined temperature (a temperature equal to or higher than the glass softening point), as shown in FIG.
- the lower mold 31 and the upper mold 32 are press-molded. Accordingly, the through hole 20 having a tapered cross section can be formed in the base substrate wafer 40 using the pins 33 of the upper mold 32.
- the positioning pins 33 of the upper mold 32 are inserted through the insertion holes 40 a of the base substrate wafer 40 and enter the positioning holes 31 a of the lower mold 31. Therefore, since the lower mold 31, the upper mold 32, and the base substrate wafer 40 are positioned reliably, the through hole 20 can be formed at a desired position with high accuracy.
- the wafer 40 for base substrates is cooled and solidified, and the lower mold
- a plurality of pairs of through holes 20 can be formed in the base substrate wafer 40.
- the through hole 20 is formed so as to be accommodated in the recess 3a formed in the lid substrate wafer 50 when the two wafers 40 and 50 are overlapped later.
- one through hole 20 is formed on the base 12 side of the piezoelectric vibrating reed 4, and the other through hole 20 is formed on the tip side of the vibrating arm section 11.
- the through-hole 20 is filled by filling the formed through-hole 20 with the conductive paste P containing the metal fine particles P ⁇ b> 1 without a gap.
- a baking process is performed in which the embedded paste is baked and cured at a predetermined temperature.
- the conductive paste P is firmly fixed to the inner peripheral surface of the through hole 20, so that the through electrode 21 having a tapered cross section can be formed.
- the through electrode forming process is completed.
- a polishing step (S33) of polishing both surfaces of the base substrate wafer 40 by a predetermined thickness is performed.
- both sides of the conductive paste P cured by firing can be polished simultaneously, so that the periphery of the recessed portion can be scraped off. That is, the surface of the conductive paste P can be flattened. Therefore, as shown in FIG. 18, the surface of the base substrate wafer 40 and the surface of the through electrode 21 can be substantially flush with each other.
- a conductive material is patterned on the upper surface of the base substrate wafer 40, and as shown in FIGS. 19 and 20, a bonding film forming step (S34) for forming the bonding film 22 is performed, and the pair of through electrodes A routing electrode forming step of forming a plurality of routing electrodes 23 each electrically connected to 21 is performed (S35).
- the dotted line M shown in FIG.19 and FIG.20 has shown the cutting line cut
- the bonding film 22 is not shown. By performing this step, one through electrode 21 and one routing electrode 23 are electrically connected, and the other through electrode 21 and the other routing electrode 23 are electrically connected. At this point, the second wafer manufacturing process is completed.
- the order of steps for performing the routing electrode formation step (S35) is performed after the bonding film formation step (S34).
- the bonding film formation is performed after the routing electrode formation step (S35).
- Step (S34) may be performed, or both steps may be performed simultaneously. Regardless of the order of steps, the same effects can be obtained. Therefore, the process order may be changed as necessary.
- a mounting step (S ⁇ b> 40) is performed in which the produced plurality of piezoelectric vibrating reeds 4 are joined to the upper surface of the base substrate wafer 40 so as to be electrically connected to the through electrode 21.
- the piezoelectric vibrating reed 4 is bump-bonded to the upper surface of the base substrate wafer 40 via the routing electrode 23.
- bumps B such as gold are formed on the pair of lead-out electrodes 23, respectively.
- the piezoelectric vibrating piece 4 is pressed against the bump B while heating the bump B to a predetermined temperature.
- the piezoelectric vibrating reed 4 is mechanically supported by the bumps B, and the mount electrode 14 and the routing electrode 23 are electrically connected. Therefore, the piezoelectric vibrating reed 4 is in a conductive state with respect to the through electrode 21. In particular, since the piezoelectric vibrating reed 4 is bump-bonded, it is supported in a state where it floats from the upper surface of the base substrate wafer 40.
- an overlaying process for overlaying the lid substrate wafer 50 on the base substrate wafer 40 is performed (S50). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 4 is housed in a cavity C surrounded by the recess 3 a formed in the base substrate wafer 40 and the wafers 40 and 50.
- the superposed two wafers 40 and 50 are put in an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere to perform an anodic bonding (S60).
- a predetermined voltage is applied between the bonding film 22 and the lid substrate wafer 50.
- an electrochemical reaction occurs at the interface between the bonding film 22 and the lid substrate wafer 50, and the two are firmly bonded and anodically bonded.
- the piezoelectric vibrating reed 4 can be sealed in the cavity C, and the wafer body 60 shown in FIG. 21 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained.
- FIG. 21 in order to make the drawing easy to see, a state in which the wafer body 60 is disassembled is illustrated, and the bonding film 22 is not illustrated from the base substrate wafer 40.
- a dotted line M shown in FIG. 21 illustrates a cutting line that is cut in a cutting process to be performed later.
- an external electrode is formed by patterning a conductive material on the lower surface of the base substrate wafer 40 to form a plurality of pairs of external electrodes 24 electrically connected to the pair of through electrodes 21 respectively.
- a process is performed (S70). Through this step, the piezoelectric vibrating reed 4 is electrically connected to the external electrode 24 through the through electrode 21. Therefore, the piezoelectric vibrating reed 4 sealed in the cavity C can be operated using the external electrode 24.
- a fine adjustment step of finely adjusting the frequency of each piezoelectric vibrator 1 sealed in the cavity C to be within a predetermined range is performed (S80). More specifically, a voltage is applied to the external electrode 24 to vibrate the piezoelectric vibrating piece 4. Then, laser light is irradiated from the outside through the lid substrate wafer 50 while measuring the frequency to evaporate the fine adjustment film 17 b of the weight metal film 17. Thereby, since the weight of the tip end side of the pair of vibrating arm portions 10 and 11 is changed, the frequency of the piezoelectric vibrating piece 4 can be finely adjusted so as to be within a predetermined range of the nominal frequency.
- a cutting process is performed in which the bonded wafer body 60 is cut along the cutting line M shown in FIG.
- the piezoelectric vibrating reed 4 is sealed in the cavity C formed between the base substrate 2 and the lid substrate 3 that are anodically bonded to each other.
- Multiple products can be manufactured.
- the order of processes in which the fine adjustment process (S80) is performed may be used.
- the fine adjustment step (S80) by performing the fine adjustment step (S80) first, the fine adjustment can be performed in the state of the wafer body 60, so that the plurality of piezoelectric vibrators 1 can be finely adjusted more efficiently. Therefore, the throughput can be improved, which is more preferable.
- an internal electrical characteristic inspection is performed (S100). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value) and the like of the piezoelectric vibrating piece 4 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 1.
- the through hole 20 is formed by press molding using the molding die 30 including the lower die 31 and the upper die 32. Therefore, the through hole 20 can be efficiently and uniformly formed at a time. . In addition, since the inner peripheral surface of the through hole 20 can be finished to a flat surface, the conductive paste P can be stably filled and the airtightness of the through electrode 21 can be improved.
- the pin 33 of the upper mold 32 has a taper angle ⁇ of 15 ° or more
- the through hole 20 similarly has a taper angle ⁇ of 15 ° or more. Therefore, after the base substrate wafer 40 is cooled and solidified, when removing the lower mold 31 and the upper mold 32, the pins 33 can be easily pulled out without being caught. Therefore, it is possible to prevent the pin 33 from being deformed or broken due to an excessive force. Further, since the pin 33 can be pulled out without being caught, the inner peripheral surface of the through hole 20 is hardly damaged. Therefore, the quality of the through hole 20 can be improved and the airtightness can be improved as compared with the conventional case. Therefore, the reliability of the operation of the piezoelectric vibrating piece 4 can be improved.
- the through hole 20 similarly has a taper angle ⁇ of 20 ° or less. Therefore, as shown in FIG. 3, the difference between the diameter ⁇ A of the opening exposed on the upper surface side of the base substrate wafer 40 and the diameter ⁇ B of the opening exposed on the lower surface side can be minimized. Therefore, the through electrode 21 itself can be reduced in size. Accordingly, the size of the piezoelectric vibrator 1 itself can be made smaller than before.
- the piezoelectric vibrator 1 of the present embodiment since the through-electrode 21 having higher airtightness and smaller size than the conventional one is provided, the operation reliability is improved and high. It is possible to improve the quality and reduce the size. Further, according to the method for manufacturing the piezoelectric vibrator 1, the through hole 20 can be formed with uniform quality at a time by press molding without affecting the pins 33 of the mold 30. Therefore, the piezoelectric vibrator 1 can be manufactured more efficiently than before. can do.
- the oscillator 100 is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to the integrated circuit 101.
- the oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted.
- the integrated circuit 101 for the oscillator is mounted on the substrate 103, and the piezoelectric vibrating piece 4 of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101.
- the electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown).
- Each component is molded with a resin (not shown).
- the piezoelectric vibrating reed 4 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 4 and input to the integrated circuit 101 as an electric signal.
- the input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal.
- the piezoelectric vibrator 1 functions as an oscillator.
- an RTC real-time clock
- a function for controlling the time, providing a time, a calendar, and the like can be added.
- the oscillator 100 of the present embodiment since the high-quality and miniaturized piezoelectric vibrator 1 is provided, the oscillator 100 itself can be similarly high-quality and miniaturized. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.
- the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
- the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen.
- a communication device it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.
- the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power.
- the power supply unit 111 is made of, for example, a lithium secondary battery.
- the power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel.
- the power unit 111 supplies power to each functional unit.
- the control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of voice data, measurement and display of the current time, and the like.
- the control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.
- the clock unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 vibrates, and the vibration is converted into an electric signal by the piezoelectric characteristics of the crystal, and is input to the oscillation circuit as an electric signal.
- the output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.
- the communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
- the wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125.
- the audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120.
- the amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level.
- the voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.
- the ring tone generator 123 generates a ring tone in response to a call from the base station.
- the switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120.
- the call control memory unit 124 stores a program related to incoming / outgoing call control of communication.
- the telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.
- the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop.
- the predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V.
- the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.
- the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115.
- This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
- the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.
- the portable information device 110 of the present embodiment since the high-quality and miniaturized piezoelectric vibrator 1 is provided, the portable information device itself is similarly improved in quality and size. Can do. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.
- the radio timepiece 130 of the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 131, and receives a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- a standard radio wave including timepiece information to accurately It is a clock with a function of automatically correcting and displaying the correct time.
- transmitting stations transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves.
- Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.
- the antenna 132 receives a long standard wave of 40 kHz or 60 kHz.
- the long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave.
- the received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
- the piezoelectric vibrator 1 according to this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.
- the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136.
- the CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.
- the frequency of the long standard radio wave is different overseas.
- a standard radio wave of 77.5 KHz is used. Therefore, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.
- the radio-controlled timepiece 130 of this embodiment since the high-quality and miniaturized piezoelectric vibrator 1 is provided, the radio-controlled timepiece itself can be similarly improved in quality and miniaturized. . In addition to this, it is possible to count time stably and with high accuracy over a long period of time.
- the concave portion 70 is once formed in the base substrate wafer 40 by press molding, and then both surfaces of the base substrate wafer 40 are polished.
- the through hole 20 may be formed.
- the piezoelectric vibrating reed 4 with grooves in which the groove portions 15 are formed on both surfaces of the vibrating arm portions 10 and 11 has been described as an example of the piezoelectric vibrating reed 4.
- the type without the groove 15 is described.
- the piezoelectric vibrating piece may be used.
- the electric field efficiency between the pair of excitation electrodes 13 can be increased when a predetermined voltage is applied to the pair of excitation electrodes 13, so that vibration loss is further suppressed and vibration characteristics are reduced.
- the tuning fork-type piezoelectric vibrating piece 4 has been described as an example, but is not limited to the tuning-fork type.
- it may be a thickness sliding vibration piece.
- the base substrate 2 and the lid substrate 3 are anodically bonded via the bonding film 22, but the present invention is not limited to anodic bonding. However, anodic bonding is preferable because both substrates 2 and 3 can be firmly bonded.
- the piezoelectric vibrating reed 4 is bump-bonded.
- the present invention is not limited to bump bonding.
- the piezoelectric vibrating reed 4 may be joined with a conductive adhesive.
- the piezoelectric vibrating reed 4 can be lifted from the base substrate 2 and a minimum vibration gap necessary for vibration can be secured naturally. Therefore, in this respect, it is preferable to perform bump bonding.
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Abstract
Description
この2層構造タイプの圧電振動子は、3層構造のものに比べて薄型化を図ることができる等の点において優れており、好適に使用されている。このような2層構造タイプの圧電振動子の1つとして、ベース基板を貫通するように形成された導電部材を利用して、圧電振動片とベース基板に形成された外部電極とを導通させた圧電振動子が知られている(特許文献1及び特許文献2参照)。
圧電振動片203は、例えば音叉型の振動片であって、キャビティC内においてベース基板201の上面に導電性接着剤Eを介してマウントされている。ベース基板201及びリッド基板202は、例えばセラミックやガラス等からなる絶縁基板である。両基板201、202のうちベース基板201には、基板201を貫通する貫通孔204が形成されている。そして、この貫通孔204内には、貫通孔204を塞ぐように導電部材205が埋め込まれている。この導電部材205は、ベース基板201の下面に形成された外部電極206に電気的に接続されていると共に、キャビティC内にマウントされている圧電振動片203に電気的に接続されている。
そのためには、貫通孔の形成が非常に重要な作業とされている。
しかしながら、ドリルを利用して貫通孔を形成する場合には、ドリルの状態(切れ味等)によって貫通孔の形成具合が左右されてしまうので、品質にばらつきが生じ易かった。また、内周面が粗れ易く、平坦な面に仕上げることが困難であった。そのため、導電ペーストを安定して充填することが難しいうえ、気密の信頼性に劣るものであった。しかも、貫通孔は、通常ウエハの段階で複数形成されるものであるので、ドリルを利用する場合には非常に時間がかかってしまい効率的ではなかった。
また、サンドブラスト法を利用して貫通孔を形成する場合には、製法上どうしても内周面が粗れ易く、平坦な面に仕上げることが困難であった。そのため、導電ペーストを安定して充填することが難しいうえ、気密の信頼性に劣るものであった。
よって、この方法は、上述した他の方法に比べて貫通孔の形成に優れている。
まず、プレス成形後、成形型とベース基板とを分離させる際に、貫通孔を形成するための成形型のピンが抜け難く、ピンが変形或いは折れてしまう可能性があった。また、ピンが抜け難いため、貫通孔側に負荷がかかってしまい貫通孔の内周面に傷が付く等の品質低下を引き起こす可能性もあった。
ところが、近年の電子機器の小型化に伴って、これら各種の電子機器に搭載される圧電振動子に関しても今後に向けてさらなる小型化が求められている。しかしながら、貫通電極自体の小型化が難しくなってしまうと、圧電振動子のサイズをより小型化にすることが難しくなってしまうので、上述したニーズに応えることができなかった。
また、この圧電振動子を有する発振器、電子機器及び電波時計と、圧電振動子を製造する製造方法とを提供することである。
(1)本発明に係る圧電振動子の製造方法は、互いに接合されたベース基板とリッド基板と間に形成されたキャビティ内に圧電振動片が封止された圧電振動子を、ベース基板用ウエハとリッド基板用ウエハとを利用して一度に複数製造する方法であって、下型と、下型に向けて突出すると共にテーパー角度が15°以上20°以下の範囲内に収まった断面テーパー状のピンを有する上型とからなる成形型を用意した後、下型と上型との間に前記ベース基板用ウエハをセットするセット工程と前記ベース基板用ウエハを所定温度に加熱して軟化させた状態で前記下型と前記上型とでプレス成形し、前記ピンを利用してベース基板用ウエハに貫通孔を形成するプレス工程と前記ベース基板用ウエハを冷却固化させた後、前記貫通孔内に導電ペーストを埋め込んで貫通孔を塞いだ後、導電ペーストを所定の温度で焼成して硬化させることで断面テーパー状の貫通電極を形成する焼成工程と前記貫通電極に対して導通するように、前記ベース基板用ウエハの上面に前記圧電振動片を接合するマウント工程と前記ベース基板用ウエハと前記リッド基板用ウエハとを重ね合わせて接合し、前記圧電振動片を前記キャビティ内に封止する接合工程と前記ベース基板用ウエハの下面に、前記貫通電極に対して導通するように外部電極を形成する外部電極形成工程と接合された前記両ウエハを切断して、複数の前記圧電振動子に小片化する切断工程とを備えている。
その結果、互いに接合されたベース基板とリッド基板との間に形成されたキャビティ内に圧電振動片が封止された2層構造タイプの表面実装型の圧電振動子を一度に複数製造することができる。
しかも、上型のピンは、テーパー角度が15°以上あるので、貫通孔も同様にテーパー角度が15°以上となる。よって、ベース基板用ウエハを冷却固化させた後、下型及び上型を取り外す際に、ピンを引っ掛けることなく容易に抜くことができる。そのため、ピンに無理な力が加わって、変形したり折れたりしてしまうことを未然に防止することができる。また、ピンを引っ掛けることなく抜くことができるので、貫通孔の内周面に傷等が付き難い。よって、貫通孔の品質を高めることができると共に、気密性を従来よりも高めることができる。そのため、圧電振動片の作動の信頼性を高めることができる。
P 導電ペースト
θ テーパー角度
1 圧電振動子
2 ベース基板
3 リッド基板
4 圧電振動片
20 スルーホール(貫通孔)
21 貫通電極
24 外部電極
31 下型
32 上型
33 上型のピン
30 成形型
40 ベース基板用ウエハ
50 リッド基板用ウエハ
101 発振器の集積回路
100 発振器
113 電子機器の計時部
110 携帯情報機器(電子機器)
131 電波時計のフィルタ部
130 電波時計
本実施形態の圧電振動子1は、図1から図4に示すように、ベース基板2とリッド基板3とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片4が収納された表面実装型の圧電振動子1である。
なお、図4においては、図面を見易くするために後述する励振電極13、引き出し電極16、マウント電極14及び重り金属膜17の図示を省略している。
この圧電振動片4は、平行に配置された一対の振動腕部10、11と、この一対の振動腕部10、11の基端側を一体的に固定する基部12と、一対の振動腕部10、11の外表面上に形成されて一対の振動腕部10、11を振動させる励振電極13と、この励振電極13に電気的に接続されたマウント電極14とを有している。
また、本実施形態の圧電振動片4は、一対の振動腕部10、11の両主面上に、振動腕部10、11の長手方向に沿ってそれぞれ形成された溝部15を備えている。この溝部15は、振動腕部10、11の基端側から略中間付近まで形成されている。
なお、上述した励振電極13、マウント電極14及び引き出し電極16は、例えば、クロム(Cr)、ニッケル(Ni)、アルミニウム(Al)やチタン(Ti)等の導電性膜の被膜により形成されたものである。
このベース基板2には、ベース基板2を貫通する一対のスルーホール(貫通孔)20が形成されている。この際、一対のスルーホール20は、キャビティC内に収まるように形成されている。より詳しく説明すると、マウントされた圧電振動片4の基部12側に一方のスルーホール20が位置し、振動腕部11の先端側に他方のスルーホール20が位置するように形成されている。
なお、導電ペーストPは、複数の金属微粒子P1が互いに接触し合っていることで、電気導通性が確保されている。
一対の引き回し電極23は、一対の貫通電極21と圧電振動片4の一対のマウント電極14とをそれぞれ電気的に接続するようにパターニングされている。より詳しく説明すると、図2及び図4に示すように、一方の引き回し電極23は、圧電振動片4の基部12の真下に位置するように一方の貫通電極21の真上に形成されている。また、他方の引き回し電極23は、一方の引き回し電極23に隣接した位置から、振動腕部11に沿って振動腕部11の先端側に引き回しされた後、他方の貫通電極21の真上に位置するように形成されている。
また、ベース基板2の下面には、図1、図3及び図4に示すように、貫通電極21に対してそれぞれ電気的に接続される外部電極24が形成されている。その結果、圧電振動片4は、貫通電極21を介して外部電極24に導通している。
はじめに、図11に示すように、下型31と、下型31に向けて突出するピン33を有する上型32とからなる成形型30を用意する。この際、上型32のピン33は、先端に向かうに連れて漸次径が縮径する断面テーパー状であると共に、テーパー角度θが15°以上20°以下の範囲に収まったものを用意する。なお、上型32には、ピン33とは別に、下型31に設けられた位置決め孔31a内に入り込む位置決めピン32aが取り付けられている。
成形型30を用意した後、下型31と上型32との間にベース基板用ウエハ40をセットする。この際、ベース基板用ウエハ40に位置決めピン32aが挿通する挿通孔40aを開けておき、挿通孔40aが位置決め孔31aに対向するようにセットする。
そこで、本実施形態では焼成後に、図17に示すように、ベース基板用ウエハ40の両面をそれぞれ所定の厚みだけ研磨する研磨工程(S33)を行う。この工程を行うことで、焼成によって硬化した導電ペーストPの両面も同時に研磨できるので、凹んでしまった部分の周囲を削り取ることができる。つまり、導電ペーストPの表面を平坦にすることができる。
よって、図18に示すように、ベース基板用ウエハ40の表面と、貫通電極21の表面とをほぼ面一の状態にすることができる。
この工程を行うことにより、一方の貫通電極21と一方の引き回し電極23とが導通すると共に、他方の貫通電極21と他方の引き回し電極23とが導通した状態となる。この時点で第2のウエハ作製工程が終了する。
特に、圧電振動片4は、バンプ接合されるので、ベース基板用ウエハ40の上面から浮いた状態で支持される。
ところで、陽極接合を行う際、ベース基板用ウエハ40に形成されたスルーホール20は、貫通電極21によって完全に塞がれているので、キャビティC内の気密がスルーホール20を通じて損なわれることがない。
なお、切断工程(S90)を行って個々の圧電振動子1に小片化した後に、微調工程(S80)を行う工程順序でも構わない。但し、上述したように、微調工程(S80)を先に行うことで、ウエハ体60の状態で微調を行うことができるので、複数の圧電振動子1をより効率よく微調することができる。よって、スループットの向上化を図ることができるので、より好ましい。
また、圧電振動子1の製造方法によれば、成形型30のピン33に何ら影響を与えることなく、プレス成形で一度に均一な品質でスルーホール20を形成できるので、従来よりも効率良く製造することができる。
本実施形態の発振器100は、図23に示すように、圧電振動子1を、集積回路101に電気的に接続された発振子として構成したものである。この発振器100は、コンデンサ等の電子部品102が実装された基板103を備えている。基板103には、発振器用の上記集積回路101が実装されており、この集積回路101の近傍に、圧電振動子1の圧電振動片4が実装されている。これら電子部品102、集積回路101及び圧電振動子1は、図示しない配線パターンによってそれぞれ電気的に接続されている。なお、各構成部品は、図示しない樹脂によりモールドされている。
また、集積回路101の構成を、例えば、RTC(リアルタイムクロック)モジュール等を要求に応じて選択的に設定することで、時計用単機能発振器等の他、当該機器や外部機器の動作日や時刻を制御したり、時刻やカレンダー等を提供したりする機能を付加することができる。
無線部117は、音声データ等の各種データを、アンテナ125を介して基地局と送受信のやりとりを行う。音声処理部118は、無線部117又は増幅部120から入力された音声信号を符号化及び複号化する。増幅部120は、音声処理部118又は音声入出力部121から入力された信号を、所定のレベルまで増幅する。音声入出力部121は、スピーカやマイクロフォン等からなり、着信音や受話音声を拡声したり、音声を集音したりする。
なお、呼制御メモリ部124は、通信の発着呼制御に係るプログラムを格納する。また、電話番号入力部122は、例えば、0から9の番号キー及びその他のキーを備えており、これら番号キー等を押下することにより、通話先の電話番号等が入力される。
なお、通信部114の機能に係る部分の電源を、選択的に遮断することができる電源遮断部126を備えることで、通信部114の機能をより確実に停止することができる。
本実施形態の電波時計130は、図24に示すように、フィルタ部131に電気的に接続された圧電振動子1を備えたものであり、時計情報を含む標準の電波を受信して、正確な時刻に自動修正して表示する機能を備えた時計である。
日本国内には、福島県(40kHz)と佐賀県(60kHz)とに、標準の電波を送信する送信所(送信局)があり、それぞれ標準電波を送信している。40kHz若しくは60kHzのような長波は、地表を伝播する性質と、電離層と地表とを反射しながら伝播する性質とを併せもつため、伝播範囲が広く、上述した2つの送信所で日本国内を全て網羅している。
アンテナ132は、40kHz若しくは60kHzの長波の標準電波を受信する。長波の標準電波は、タイムコードと呼ばれる時刻情報を、40kHz若しくは60kHzの搬送波にAM変調をかけたものである。受信された長波の標準電波は、アンプ133によって増幅され、複数の圧電振動子1を有するフィルタ部131によって濾波、同調される。
本実施形態における圧電振動子1は、上記搬送周波数と同一の40kHz及び60kHzの共振周波数を有する水晶振動子部138、139をそれぞれ備えている。
搬送波は、40kHz若しくは60kHzであるから、水晶振動子部138、139は、上述した音叉型の構造を持つ振動子が好適である。
Claims (5)
- 互いに接合されたベース基板とリッド基板と間に形成されたキャビティ内に圧電振動片が封止された圧電振動子を、ベース基板用ウエハとリッド基板用ウエハとを利用して一度に複数製造する方法であって、
下型と、下型に向けて突出すると共にテーパー角度が15°以上20°以下の範囲内に収まった断面テーパー状のピンを有する上型とからなる成形型を用意した後、下型と上型との間に前記ベース基板用ウエハをセットするセット工程と
前記ベース基板用ウエハを所定温度に加熱して軟化させた状態で前記下型と前記上型とでプレス成形し、前記ピンを利用してベース基板用ウエハに貫通孔を形成するプレス工程と
前記ベース基板用ウエハを冷却固化させた後、前記貫通孔内に導電ペーストを埋め込んで貫通孔を塞いだ後、導電ペーストを所定の温度で焼成して硬化させることで断面テーパー状の貫通電極を形成する焼成工程と
前記貫通電極に対して導通するように、前記ベース基板用ウエハの上面に前記圧電振動片を接合するマウント工程と
前記ベース基板用ウエハと前記リッド基板用ウエハとを重ね合わせて接合し、前記圧電振動片を前記キャビティ内に封止する接合工程と
前記ベース基板用ウエハの下面に、前記貫通電極に対して導通するように外部電極を形成する外部電極形成工程と
接合された前記両ウエハを切断して、複数の前記圧電振動子に小片化する切断工程とを備えている
ことを特徴とする圧電振動子の製造方法。 - 互いに接合され、間にキャビティが形成されたベース基板及びリッド基板と
前記キャビティ内で前記ベース基板上にマウントされた圧電振動片と
前記ベース基板の下面に形成された外部電極と
前記ベース基板を貫通するように形成され、前記キャビティ内の気密を維持すると共に、前記圧電振動片と前記外部電極とを導通させる貫通電極と
を備え、
前記貫通電極は、ピンを有する成形型によるプレス成形によって形成され、テーパー角度が15°以上20°以下の範囲内に収まった断面テーパー状の貫通孔と前記貫通孔内に充填された後に硬化された導電ペーストとを備えている
ことを特徴とする圧電振動子。 - 請求項1に記載の圧電振動子が、発振子として集積回路に電気的に接続されている
ことを特徴とする発振器。 - 請求項1に記載の圧電振動子が、計時部に電気的に接続されている
ことを特徴とする電子機器。 - 請求項1に記載の圧電振動子が、フィルタ部に電気的に接続されている
ことを特徴とする電波時計。
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2008/065252 WO2010023733A1 (ja) | 2008-08-27 | 2008-08-27 | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 |
| JP2010526455A JP5065494B2 (ja) | 2008-08-27 | 2008-08-27 | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 |
| CN2008801318368A CN102197588A (zh) | 2008-08-27 | 2008-08-27 | 压电振动器、振荡器、电子设备和电波钟以及压电振动器的制造方法 |
| TW098123915A TW201010277A (en) | 2008-08-27 | 2009-07-15 | Piezoelectric vibrator, oscillator, electronic apparatus, wave clock, and method for manufacturing piezoelectric vibrator |
| US13/035,490 US8421546B2 (en) | 2008-08-27 | 2011-02-25 | Piezoelectric vibrator, oscillator, electronic equipment timepiece, and radio-controlled timepiece, and method of manufacturing piezoelectric vibrator |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2008/065252 WO2010023733A1 (ja) | 2008-08-27 | 2008-08-27 | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US13/035,490 Continuation US8421546B2 (en) | 2008-08-27 | 2011-02-25 | Piezoelectric vibrator, oscillator, electronic equipment timepiece, and radio-controlled timepiece, and method of manufacturing piezoelectric vibrator |
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| WO2010023733A1 true WO2010023733A1 (ja) | 2010-03-04 |
Family
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| PCT/JP2008/065252 Ceased WO2010023733A1 (ja) | 2008-08-27 | 2008-08-27 | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 |
Country Status (5)
| Country | Link |
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| US (1) | US8421546B2 (ja) |
| JP (1) | JP5065494B2 (ja) |
| CN (1) | CN102197588A (ja) |
| TW (1) | TW201010277A (ja) |
| WO (1) | WO2010023733A1 (ja) |
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| CN102332882A (zh) * | 2010-07-13 | 2012-01-25 | 郭启勋 | 表面粘着微机电震荡器的结构及其制造方法 |
| JP2013233430A (ja) * | 2012-05-08 | 2013-11-21 | Olympus Winter & Ibe Gmbh | ビアを有する外科用具 |
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| JP4567775B2 (ja) * | 2008-08-26 | 2010-10-20 | 富士通メディアデバイス株式会社 | 弾性表面波デバイスおよびその製造方法 |
| JP5577671B2 (ja) * | 2009-10-23 | 2014-08-27 | 富士通株式会社 | 圧電振動子の製造方法 |
| TWI466437B (zh) * | 2010-03-29 | 2014-12-21 | Kyocera Kinseki Corp | Piezoelectric vibrator |
| JP5603166B2 (ja) * | 2010-08-23 | 2014-10-08 | セイコーインスツル株式会社 | 電子デバイス、電子機器及び電子デバイスの製造方法 |
| US20130155629A1 (en) * | 2011-12-19 | 2013-06-20 | Tong Hsing Electronic Industries, Ltd. | Hermetic Semiconductor Package Structure and Method for Manufacturing the same |
| JP5843371B2 (ja) * | 2013-03-20 | 2016-01-13 | サムソン エレクトロ−メカニックス カンパニーリミテッド. | 振動発生装置 |
| EP3113586B1 (en) | 2014-02-26 | 2018-11-28 | NGK Insulators, Ltd. | Insulating substrate having through-holes |
| US20180130719A1 (en) * | 2016-11-09 | 2018-05-10 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages and method of manufacturing the same |
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Also Published As
| Publication number | Publication date |
|---|---|
| JP5065494B2 (ja) | 2012-10-31 |
| US8421546B2 (en) | 2013-04-16 |
| CN102197588A (zh) | 2011-09-21 |
| US20110193646A1 (en) | 2011-08-11 |
| JPWO2010023733A1 (ja) | 2012-01-26 |
| TW201010277A (en) | 2010-03-01 |
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