WO2010097904A1 - 圧電振動子の製造方法、発振器、電子機器および電波時計 - Google Patents
圧電振動子の製造方法、発振器、電子機器および電波時計 Download PDFInfo
- Publication number
- WO2010097904A1 WO2010097904A1 PCT/JP2009/053333 JP2009053333W WO2010097904A1 WO 2010097904 A1 WO2010097904 A1 WO 2010097904A1 JP 2009053333 W JP2009053333 W JP 2009053333W WO 2010097904 A1 WO2010097904 A1 WO 2010097904A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- squeegee
- base substrate
- piezoelectric vibrator
- piezoelectric
- hole
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 159
- 239000011521 glass Substances 0.000 claims abstract description 69
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000011162 core material Substances 0.000 abstract description 37
- 235000012431 wafers Nutrition 0.000 description 86
- 235000014676 Phragmites communis Nutrition 0.000 description 38
- 230000005284 excitation Effects 0.000 description 24
- 238000010304 firing Methods 0.000 description 19
- 230000008569 process Effects 0.000 description 19
- 238000010586 diagram Methods 0.000 description 15
- 238000004891 communication Methods 0.000 description 10
- 238000005520 cutting process Methods 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000006870 function Effects 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000013078 crystal Substances 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 6
- 238000005498 polishing Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000005361 soda-lime glass Substances 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000000605 extraction Methods 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000000149 penetrating effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000007689 inspection Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 239000005416 organic matter Substances 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 210000000707 wrist Anatomy 0.000 description 2
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 244000089486 Phragmites australis subsp australis Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000005433 ionosphere Substances 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 238000007790 scraping Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4046—Through-connections; Vertical interconnect access [VIA] connections using auxiliary conductive elements, e.g. metallic spheres, eyelets, pieces of wire
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/026—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the tuning fork type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H3/04—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks for obtaining desired frequency or temperature coefficient
- H03H2003/0414—Resonance frequency
- H03H2003/0492—Resonance frequency during the manufacture of a tuning-fork
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/095—Conductive through-holes or vias
- H05K2201/09581—Applying an insulating coating on the walls of holes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10242—Metallic cylinders
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention relates to a method of manufacturing a surface mount type (SMD) piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between two bonded substrates, an oscillator having a piezoelectric vibrator, an electronic It relates to equipment and radio clocks.
- SMD surface mount type
- a piezoelectric vibrator using crystal or the like is used as a timing source such as a time source or a control signal, a reference signal source, or the like in a mobile phone or a portable information terminal.
- Various piezoelectric vibrators of this type are known, and one of them is a surface-mount type piezoelectric vibrator.
- this type of piezoelectric vibrator a three-layer structure type in which a piezoelectric substrate on which a piezoelectric vibrating piece is formed is joined so as to be sandwiched from above and below by a base substrate and a lid substrate is known. In this case, the piezoelectric vibrator is housed in a cavity (sealed chamber) formed between the base substrate and the lid substrate.
- a two-layer structure type has been developed instead of the three-layer structure type described above.
- This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly bonded, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates.
- This two-layer structure type piezoelectric vibrator is excellent in that it can be made thinner than the three-layer structure, and is preferably used.
- a piezoelectric vibrating piece and an external electrode formed on the base substrate are made conductive by using a conductive member formed so as to penetrate the base substrate. Piezoelectric vibrators are known (see, for example, Patent Document 1 and Patent Document 2).
- the piezoelectric vibrator 200 includes a base substrate 201 and a lid substrate 202 that are anodically bonded to each other via a bonding film 207, and a cavity C formed between the substrates 201 and 202. And a piezoelectric vibrating piece 203 sealed inside.
- the piezoelectric vibrating piece 203 is, for example, a tuning fork type vibrating piece, and is mounted on the upper surface of the base substrate 201 in the cavity C via the conductive adhesive E.
- the base substrate 201 and the lid substrate 202 are insulating substrates made of, for example, ceramic or glass.
- a through hole 204 penetrating the substrate 201 is formed in the base substrate 201 of both the substrates 201 and 202.
- a conductive member 205 is embedded in the through hole 204 so as to close the through hole 204.
- the conductive member 205 is electrically connected to the external electrode 206 formed on the lower surface of the base substrate 201 and is electrically connected to the piezoelectric vibrating piece 203 mounted in the cavity C.
- the conductive member 205 closes the through hole 204 to maintain airtightness in the cavity C, and electrically connects the piezoelectric vibrating piece 203 and the external electrode 206. It plays a big role. In particular, if the close contact with the through hole 204 is insufficient, the airtightness in the cavity C may be impaired, and if the contact with the conductive adhesive E or the external electrode 206 is insufficient, This causes a malfunction of the piezoelectric vibrating piece 203. Therefore, in order to eliminate such inconvenience, it is necessary to form the conductive member 205 in a state where the through hole 204 is completely closed while firmly attached to the inner surface of the through hole 204 and there is no dent on the surface. There is.
- Patent Document 1 and Patent Document 2 describe that the conductive member 205 is formed of a conductive paste (Ag paste, Au-Sn paste, etc.), how to actually form the conductive member 205, etc. No specific manufacturing method is described.
- a conductive paste it needs to be baked and cured. That is, after the conductive paste is embedded in the through hole 204, it is necessary to perform baking and cure.
- organic matter contained in the conductive paste disappears due to evaporation, and thus the volume after firing usually decreases compared to before firing (for example, when an Ag paste is used as the conductive paste) The volume is reduced by about 20%).
- the conductive member 205 is formed using the conductive paste, there is a possibility that a dent will be generated on the surface or, if it is severe, the through hole may open at the center. As a result, there is a possibility that the airtightness in the cavity C is impaired or the electrical conductivity between the piezoelectric vibrating piece 203 and the external electrode 206 is impaired.
- FIG. 26A first, metal pins 212 are arranged in through holes 211 formed in the base substrate 201.
- a fill squeegee 214 inclined at an attack angle ⁇ ° (for example, 15 °) with respect to the surface of the base substrate 201 is brought into contact with the surface of the base substrate 201, and then unidirectional.
- the paste-like glass frit 215 on the base substrate 201 is filled into the through hole 211 (set process).
- a scribe squeegee 216 inclined at an attack angle ⁇ ° (for example, 85 °) larger than the attack angle ⁇ ° with respect to the surface of the base substrate 201 is moved in a direction opposite to the moving direction of the fill squeegee 214, Excess glass frit 215 on the base substrate 201 is removed (glass frit removing step). As described above, the glass frit 215 is filled in the gap between the through hole 211 and the pin 212 and then baked to form the through electrode, so that the volume reduction becomes only the glass frit 215 portion. The through electrode can be formed efficiently.
- the glass flid 215 is not filled on the back side of the pin 212 with respect to the moving direction of the fill squeegee 214, and the depression D is formed. (See FIG. 26C).
- the scribe squeegee 216 moves in a direction opposite to the moving direction of the fill squeegee 214 while scraping off the glass fridge 215 remaining on the base substrate 201.
- the attack angle ⁇ is large, the glass fridge 215 is recessed D. As a result, as shown in FIG.
- the dent D remains in the glass lid 215 in the through hole 211.
- cracks are likely to occur, and airtightness in the cavity C may be impaired, or electrical conductivity between the piezoelectric vibrating piece 203 and the external electrode 206 may be impaired.
- the present invention has been made in view of the above circumstances, and a method for manufacturing a piezoelectric vibrator, an oscillator, and an electronic device that can ensure airtightness in the cavity and stable electrical continuity between the piezoelectric vibrating piece and the external electrode.
- the purpose is to provide a radio clock.
- the present invention proposes the following means. That is, the method for manufacturing a piezoelectric vibrator according to the present invention is a method for manufacturing a piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between a base substrate and a lid substrate joined to each other.
- the first squeegee is used to fill the through hole with the glass frit from one side, and the second squeegee is moved from the opposite side in the direction opposite to the moving direction of the first squeegee.
- the attack angle of the first squeegee and the second squeegee is set in a range of 5 ° to 45 °.
- the first squeegee and the second squeegee are in contact with the second surface inclined at the attack angle, and the second surface. And a flank that gradually inclines upward from the contact point with the attack surface toward the rear in the moving direction of the first squeegee and the second squeegee. If the glass frit is filled with the first squeegee and the second squeegee having such a shape, the glass frit can be reliably filled in the through hole, and the flank is formed, so that the first squeegee is formed. And the resistance at the time of a movement of a 2nd squeegee can be reduced, and a filling operation
- the oscillator according to the present invention is characterized in that the piezoelectric vibrator manufactured by any one of the methods described above is electrically connected to an integrated circuit as an oscillator. According to the oscillator having such a feature, since the electrode is formed by reliably filling the glass frit in the through hole, airtightness in the cavity and electrical connection between the piezoelectric vibrating piece and the external electrode can be ensured. Is possible.
- the electronic apparatus is characterized in that the piezoelectric vibrator manufactured by any one of the above-described methods is electrically connected to the time measuring unit. According to the electronic device having such a feature, since the electrode is formed by reliably filling the glass frit in the through hole, airtightness in the cavity and electrical continuity between the piezoelectric vibrating piece and the external electrode are ensured. It becomes possible.
- the radio-controlled timepiece according to the present invention is characterized in that the piezoelectric element manufactured by any one of the methods described above is electrically connected to the filter unit. According to the radio timepiece having such a feature, since the electrode is formed by reliably filling the glass frit in the through hole, airtightness in the cavity and electrical connection between the piezoelectric vibrating piece and the external electrode are ensured. It becomes possible.
- the glass frit is filled in the through hole in two stages using the first squeegee and the second squeegee so that the airtightness in the cavity and the piezoelectric vibrating piece and the external electrode are filled. Can be stably ensured.
- FIG. 1 is an external perspective view showing an embodiment of a piezoelectric vibrator according to the present invention.
- FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1 and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG.
- FIG. 4 is an exploded perspective view of the piezoelectric vibrator shown in FIG.
- FIG. 5 is a top view of the piezoelectric vibrating piece constituting the piezoelectric vibrator shown in FIG. 6 is a bottom view of the piezoelectric vibrating piece shown in FIG. 7 is a cross-sectional view taken along the line BB shown in FIG. FIG.
- FIG. 8 is a perspective view of a cylindrical body constituting the through electrode shown in FIG.
- FIG. 9 is a flowchart showing a flow of manufacturing the piezoelectric vibrator shown in FIG.
- FIG. 10 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 9, and shows a state in which a plurality of recesses are formed on the lid substrate wafer that is the base of the lid substrate. It is.
- FIG. 11 is a diagram showing one process when manufacturing a piezoelectric vibrator according to the flowchart shown in FIG. 9, and shows a state in which a pair of through holes are formed in a base substrate wafer which is a base substrate.
- FIG. FIG. 12 is a view of the state shown in FIG.
- FIG. 13 is a perspective view of a housing used when manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 9.
- FIG. 14 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 9, and is a diagram showing a step of placing a housing in the through hole and filling a glass frit. is there.
- FIG. 15 is a plan view showing a state after the glass frit is filled in the through hole with the first squeegee.
- FIG. 16 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG.
- FIG. 17 is a diagram illustrating a process for manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG. 9, and illustrates a state in which the base portion of the housing is polished after the state illustrated in FIG. 18. is there.
- FIG. 18 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG. 9. After the state illustrated in FIG. 19, the bonding film and the routing electrode are provided on the upper surface of the base substrate wafer. It is a figure which shows the state which patterned.
- FIG. 19 is an overall view of the base substrate wafer in the state shown in FIG. FIG.
- FIG. 20 is a diagram showing one process when the piezoelectric vibrator is manufactured according to the flowchart shown in FIG. 9, and the base substrate wafer, the lid substrate wafer, It is a disassembled perspective view of the wafer body by which anodic bonding was carried out.
- FIG. 21 is a block diagram showing an embodiment of the oscillator according to the present invention.
- FIG. 22 is a configuration diagram showing an embodiment of an electronic apparatus according to the invention.
- FIG. 23 is a block diagram showing an embodiment of a radio timepiece according to the present invention.
- FIG. 24 is a diagram showing the internal configuration of a conventional piezoelectric vibrator, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 24 is a cross-sectional view of the piezoelectric vibrator shown in FIG.
- FIG. 26 is a diagram illustrating a process for manufacturing a conventional piezoelectric vibrator, in which a housing is disposed in a through hole, a glass frit is filled with a fill squeegee, and an excess glass frit is formed with a scribe squeegee. It is a figure which shows the process of removing.
- Piezoelectric vibrator 2 Base substrate 3 Lid board 3a Recess for cavity 4 Piezoelectric vibrating piece 7 Core material 6 cylinder 6a glass frit 6c Center hole of cylinder 30, 31 Through hole (through hole) 32, 33 Through electrode 36, 37 Leading electrode 38,39 External electrode 40 Base substrate wafer 50 Lid substrate wafer 70 First squeegee 70a Attack surface 70b Flank 71 Second squeegee 71a Attack surface 71b Flank 100 Oscillator 101 Integrated Circuit of Oscillator 110 Portable information devices (electronic devices) 113 Timekeeping section of electronic equipment 130 radio clock 131 Radio clock filter B Bump C cavity D hollow ⁇ 1 , ⁇ 2 attack angle ⁇ 1 , ⁇ 2 clearance angle
- the piezoelectric vibrator 1 of the present embodiment is formed in a box shape in which a base substrate 2 and a lid substrate 3 are laminated in two layers. This is a surface-mount type piezoelectric vibrator in which the resonator element 4 is housed.
- the excitation electrode 15, the extraction electrodes 19 and 20, the mount electrodes 16 and 17, and the weight metal film 21, which will be described later, are omitted for easy understanding of the drawing.
- the piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed from a piezoelectric material such as quartz crystal, lithium tantalate or lithium niobate, and when a predetermined voltage is applied. It vibrates.
- the piezoelectric vibrating reed 4 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions. 10 and 11, an excitation electrode 15 including a first excitation electrode 13 and a second excitation electrode 14 that vibrate the pair of vibrating arm portions 10 and 11, a first excitation electrode 13, and Mount electrodes 16 and 17 are electrically connected to the second excitation electrode 14.
- the piezoelectric vibrating reed 4 according to the present embodiment includes groove portions 18 formed along the longitudinal direction of the vibrating arm portions 10 and 11 on both main surfaces of the pair of vibrating arm portions 10 and 11. .
- the groove portion 18 is formed from the proximal end side of the vibrating arm portions 10 and 11 to the vicinity of the middle.
- the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 is an electrode that vibrates the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. Patterned on the outer surfaces of the vibrating arm portions 10 and 11 while being electrically separated from each other.
- the first excitation electrode 13 is mainly formed on the groove portion 18 of one vibration arm portion 10 and on both side surfaces of the other vibration arm portion 11, and the second excitation electrode 14 is formed on one side. Are formed mainly on both side surfaces of the vibrating arm portion 10 and on the groove portion 18 of the other vibrating arm portion 11.
- first excitation electrode 13 and the second excitation electrode 14 are electrically connected to the mount electrodes 16 and 17 via the extraction electrodes 19 and 20, respectively, on both main surfaces of the base portion 12.
- a voltage is applied to the piezoelectric vibrating reed 4 via the mount electrodes 16 and 17.
- the excitation electrode 15, the mount electrodes 16 and 17, and the extraction electrodes 19 and 20 described above are made of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al), or titanium (Ti). It is formed.
- a weight metal film 21 for adjusting (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 10 and 11.
- the weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is roughly adjusted and a fine adjustment film 21b used when the frequency is finely adjusted.
- the piezoelectric vibrating reed 4 configured as described above is bump-bonded to the upper surface of the base substrate 2 using bumps B such as gold as shown in FIGS. More specifically, a pair of mount electrodes 16 and 17 are bump-bonded on two bumps B formed on routing electrodes 36 and 37 (described later) patterned on the upper surface of the base substrate 2. ing. As a result, the piezoelectric vibrating reed 4 is supported in a state of floating from the upper surface of the base substrate 2, and the mount electrodes 16 and 17 and the routing electrodes 36 and 37 are electrically connected to each other.
- the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape as shown in FIGS.
- a rectangular recess 3 a in which the piezoelectric vibrating reed 4 is accommodated is formed on the bonding surface side to which the base substrate 2 is bonded.
- the recess 3 a is a cavity recess that serves as a cavity C that accommodates the piezoelectric vibrating reed 4 when the substrates 2 and 3 are overlapped.
- the lid substrate 3 is anodically bonded to the base substrate 2 with the recess 3a facing the base substrate 2 side.
- the base substrate 2 is a transparent insulating substrate made of a glass material, for example, soda lime glass, like the lid substrate 3, and has a size that can be superimposed on the lid substrate 3 as shown in FIGS. It is formed in a plate shape.
- the base substrate 2 is formed with a pair of through holes (through holes) 30 and 31 penetrating the base substrate 2. At this time, the pair of through holes 30 and 31 are formed so as to be accommodated in the cavity C. More specifically, in the through holes 30 and 31 of the present embodiment, one through hole 30 is formed at a position corresponding to the base 12 side of the mounted piezoelectric vibrating reed 4, and the distal ends of the vibrating arm portions 10 and 11 are formed.
- the other through hole 31 is formed at a position corresponding to.
- a through hole having a tapered cross section whose diameter gradually decreases from the lower surface to the upper surface of the base substrate 2 will be described as an example.
- the present invention is not limited to this, and the base substrate 2 is straightened.
- a through hole that penetrates may be used. In any case, it only has to penetrate the base substrate 2.
- a pair of through electrodes 32 and 33 formed so as to fill the through holes 30 and 31 are formed.
- the through electrodes 32 and 33 are formed by the cylindrical body 6 and the core member 7 that are integrally fixed to the through holes 30 and 31 by firing. 31 are completely closed to maintain the airtightness in the cavity C, and the external electrodes 38 and 39, which will be described later, and the routing electrodes 36 and 37 are electrically connected.
- the cylindrical body 6 is obtained by baking paste-like glass frit 6a.
- the cylindrical body 6 is formed in a cylindrical shape having both ends flat and substantially the same thickness as the base substrate 2.
- the core part 7 is distribute
- the outer shape of the cylindrical body 6 is formed in a conical shape (tapered cross section) according to the shape of the through holes 30 and 31. As shown in FIG. 3, the cylindrical body 6 is fired in a state of being embedded in the through holes 30 and 31, and is firmly fixed to the through holes 30 and 31.
- the core material portion 7 is a conductive core material formed in a cylindrical shape from a metal material, and is formed so that both ends are flat and substantially the same thickness as the thickness of the base substrate 2 in the same manner as the cylindrical body 6. ing. As shown in FIG. 3, when the through electrodes 32 and 33 are formed as finished products, the core material portion 7 is formed to have substantially the same thickness as the base substrate 2 as described above. However, in the manufacturing process, the length of the core member 7 is 0.02 mm shorter than the initial thickness of the base substrate 2 in the manufacturing process (later described in the description of the manufacturing method). Details.) The core portion 7 is located in the center hole 6 c of the cylindrical body 6 and is firmly fixed to the cylindrical body 6 by firing the cylindrical body 6. The through electrodes 32 and 33 are ensured to have electrical conductivity through the conductive core portion 7.
- a conductive film for example, aluminum is used to form a bonding film 35 for anodic bonding
- a pair of routing electrodes 36 and 37 are patterned.
- the bonding film 35 is formed along the periphery of the base substrate 2 so as to surround the periphery of the recess 3 a formed in the lid substrate 3.
- the pair of lead-out electrodes 36 and 37 electrically connect one of the through electrodes 32 and 33 to the one mount electrode 16 of the piezoelectric vibrating piece 4 and the other through electrode. 33 and the other mount electrode 17 of the piezoelectric vibrating reed 4 are patterned so as to be electrically connected.
- the one lead-out electrode 36 is formed right above the one through electrode 32 so as to be positioned directly below the base 12 of the piezoelectric vibrating piece 4.
- the other routing electrode 37 is routed from the position adjacent to the one routing electrode 36 along the vibrating arm portions 10 and 11 to the distal end side of the vibrating arm portions 10 and 11, and then the other through electrode 33. It is formed so that it may be located just above.
- Bumps B are respectively formed on the pair of lead-out electrodes 36 and 37, and the piezoelectric vibrating reed 4 is mounted using the bumps B.
- one mount electrode 16 of the piezoelectric vibrating reed 4 is electrically connected to one through electrode 32 through one routing electrode 36, and the other mount electrode 17 is passed through the other routing electrode 37 to the other penetration electrode.
- the electrode 33 is electrically connected.
- external electrodes 38 and 39 that are electrically connected to the pair of through electrodes 32 and 33 are formed on the lower surface of the base substrate 2. . That is, one external electrode 38 is electrically connected to the first excitation electrode 13 of the piezoelectric vibrating reed 4 via one through electrode 32 and one routing electrode 36. The other external electrode 39 is electrically connected to the second excitation electrode 14 of the piezoelectric vibrating reed 4 via the other through electrode 33 and the other routing electrode 37.
- a predetermined drive voltage is applied to the external electrodes 38 and 39 formed on the base substrate 2.
- a current can flow through the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4, and is predetermined in a direction in which the pair of vibrating arm portions 10 and 11 are approached and separated.
- Can be vibrated at a frequency of The vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a control signal timing source, a reference signal source, and the like.
- the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 4 shown in FIGS. 5 to 7 (S10). Specifically, a quartz Lambert rough is first sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and roughly processed, and then the work-affected layer is removed by etching, and then mirror polishing such as polishing is performed to obtain a wafer having a predetermined thickness.
- the wafer is patterned with the outer shape of the piezoelectric vibrating reed 4 by photolithography, and a metal film is formed and patterned to obtain the excitation electrode 15, Lead electrodes 19 and 20, mount electrodes 16 and 17, and weight metal film 21 are formed. Thereby, the some piezoelectric vibrating piece 4 is producible.
- the resonance frequency is coarsely adjusted. This is done by irradiating the coarse adjustment film 21a of the weight metal film 21 with laser light to evaporate a part thereof and changing the weight. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting. This will be described later.
- a first wafer manufacturing process is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured up to a state immediately before anodic bonding (S20).
- a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like ( S21).
- a recess forming step is performed for forming a plurality of cavity recesses 3a in the matrix direction by etching or the like on the bonding surface of the lid substrate wafer 50 (S22). At this point, the first wafer manufacturing process is completed.
- a second wafer manufacturing process is performed in which the base substrate wafer 40 to be the base substrate 2 is manufactured up to the state immediately before anodic bonding (S30).
- a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).
- a through electrode forming step for forming a plurality of pairs of through electrodes 32 and 33 on the base substrate wafer 40 is performed (S30A).
- the through electrode forming step will be described in detail.
- a through-hole forming step (S32) for forming a plurality of pairs of through-holes 30, 31 penetrating the base substrate wafer 40 is performed.
- the dotted line M shown in FIG. 11 has shown the cutting line cut
- this process for example, sandblasting is performed from the lower surface side of the base substrate wafer 40.
- through holes 30 and 31 having a tapered section whose diameter gradually decreases from the lower surface to the upper surface of the base substrate wafer 40 can be formed.
- a plurality of pairs of through holes 30 and 31 are formed so as to be accommodated in the recess 3a formed in the lid substrate wafer 50.
- one through hole 30 is formed on the base 12 side of the piezoelectric vibrating reed 4 and the other through hole 31 is formed on the distal end side of the vibrating arm portions 10 and 11.
- a setting process is performed in which the core portion 7 of the housing 9 is disposed in the plurality of through holes 30 and 31.
- a conductive casing 9 having a length of 0.02 mm shorter than the length and a core portion 7 having a flat tip is used.
- the core member 7 is inserted until the base portion 8 of the housing 9 comes into contact with the base substrate wafer 40.
- the housing 9 it is necessary to arrange the housing 9 so that the axial direction of the core part 7 and the axial direction of the through holes 30 and 31 substantially coincide.
- the shaft portion of the core portion 7 can be simply moved by pushing the base portion 8 until it contacts the base substrate wafer 40.
- the direction and the axial direction of the through holes 30 and 31 can be made to substantially coincide. Thereby, workability
- the opening on one side of the through holes 30 and 31 can be closed by bringing the base portion 8 into contact with the surface of the base substrate wafer 40, the paste-like glass frit 6a can be easily placed in the through holes 30 and 31. Can be filled. Further, since the base portion 8 is formed in a flat plate shape, even if the base substrate wafer 40 is placed on a flat surface such as a desk between the setting step and the subsequent baking step, the base portion 8 is rattled. There is no etc. and it is stable. Also in this respect, workability can be improved.
- a first filling step of filling the through holes 30 and 31 with the paste-like glass frit 6a made of a glass material is performed (S34A).
- glass frit 6 a is applied to the surface (second surface) of the base substrate wafer 40, and the first squeegee 70 is attached to the surface of the base substrate wafer 40.
- the glass frit 6a is filled in the through holes 30 and 31 by being moved in contact with the through holes 30 and 31.
- the first squeegee 70 has a rod-like or plate-like shape extending substantially in the vertical direction, and its lower end is inclined at a predetermined attack angle ⁇ 1 ° with respect to the surface of the base substrate wafer 40.
- the attack surface 70a of the first squeegee 70 is directed forward in the moving direction and brought into contact with the surface of the base substrate wafer 40 to Move along.
- the glass frit 6 a applied to the surface of the base substrate wafer 40 is filled in the through holes 30 and 31.
- the glass frit 6a is not filled up to the upper opening of the through holes 30 and 31 in the portion on the back side of the core member 7 with respect to the moving direction of the first squeegee 70 in the through holes 30 and 31.
- the hollow D may arise.
- the second filling step (S34B) is performed by moving the second squeegee 71 in a direction opposite to the moving direction of the first squeegee 70 in a state where the second squeegee 71 is in contact with the surface of the base substrate wafer 40.
- the second squeegee 71 has a rod-like or plate-like shape extending substantially in the vertical direction, and has a predetermined attack angle ⁇ with respect to the surface of the base substrate wafer 40 at the lower end.
- the attack surface 71a of the second squeegee 71 is directed forward in the moving direction and brought into contact with the surface of the base substrate wafer 40. Move along the surface.
- the moving direction of the second squeegee S34B is opposite to the moving direction of the first squeegee 70. Due to such movement of the second squeegee 71, as shown in FIG. 14C, the movement of the first squeegee 70 remains on the surface of the base substrate wafer 40 without being filled into the through holes 30 and 31.
- the glass frit 6 a is removed from the surface and filled in the through holes 30, 31, specifically, the depressions D in the through holes 30, 31.
- the first squeegee 70 or the second squeegee 71 passes through the upper portions of the through holes 30 and 31, the first squeegee 70 and the second squeegee 71 do not come into contact with the tip of the core portion 7, It can control that core material part 7 inclines.
- the attack angles ⁇ 1 and ⁇ 2 of the first squeegee 70 and the second squeegee 71 are set in the range of 5 ° to 45 °.
- the attack angles ⁇ 1 and ⁇ 2 exceed 45 °, the performance of removing the glass frit 6a from the surface of the base substrate wafer 40 is improved, but the performance of filling the glass frit 6a into the through holes 30 and 31 is lowered. It is not preferable.
- the attack angles ⁇ 1 and ⁇ 2 are less than 5 °, the resistance when the first squeegee 70 and the second squeegee 71 are moved increases, and the first filling step S34A and the second filling step S34B are smoothly performed.
- the attack angles ⁇ 1 and ⁇ 2 are set in the range of 5 ° to 45 °, the first negative squeegee 70 and the first squeegee 70 and the second squeegee 70 can be obtained while efficiently filling the glass negative lot 6a into the through holes 30 and 31.
- the resistance during the movement of the two squeegees 71 can be kept low, and the filling action can be performed smoothly and easily.
- first squeegee 70 and the second squeegee 71 are provided with relief surfaces 70b and 71b having predetermined relief angles ⁇ 1 and ⁇ 2 , the first squeegee 70 and the second squeegee 71 are moved during the movement. The resistance can be further reduced and the filling operation can be performed more smoothly.
- the attack angles ⁇ 1 and ⁇ 2 are preferably set to 15 ° and the clearance angles ⁇ 1 and ⁇ 2 are set to 65 °. In this case, the movement of the first squeegee 70 and the second squeegee 71 is performed.
- the glass frit 6a can be efficiently filled in the through holes 30 and 31 while reducing the resistance most.
- the first squeegee 70 and the second squeegee 71 may have the attack angles ⁇ 1 and ⁇ 2 and the relief angles ⁇ 1 and ⁇ 2 set to the same value or different values, respectively. . When these same values are used, the first squeegee 70 and the second squeegee 71 can be configured with the same squeegee, which is preferable from the viewpoint of cost.
- the inside of the through holes 30, 31 is completely filled with the glass frit 6a.
- the glass frit 6a on the surface of the base substrate wafer 40 is not completely removed and remains slightly. In this respect, since the glass frit 6a on the surface is removed by the polishing step after firing, it is not necessary to perform a separate step of removing the glass frit 6a after the first filling step (S34A) and the second filling step (S34B). .
- a firing step of firing the embedded filler at a predetermined temperature is performed (S35).
- the through holes 30 and 31, the glass frit 6 a embedded in the through holes 30 and 31, and the housing 9 disposed in the glass frit 6 a are fixed to each other.
- the base portion 8 is fired together, so that the axial direction of the core material portion 7 and the axial directions of the through holes 30 and 31 are substantially matched, and both are fixed integrally. Can do.
- the glass frit 6a is baked, it is solidified as the cylindrical body 6.
- a polishing step is performed to polish and remove the base portion 8 of the casing 9 after firing (S35).
- the base part 8 which played the role which positioned the cylinder 6 and the core material part 7 can be removed, and only the core material part 7 can be left inside the cylinder 6.
- the back surface of the base substrate wafer 40 (the surface on which the base portion 8 of the housing 9 is not disposed) is polished so as to become a flat surface. And it grind
- FIG. 17 it is possible to obtain a plurality of pairs of through electrodes 32 and 33 in which the cylindrical body 6 and the core member 7 are integrally fixed.
- the through electrode 32 is formed of the cylindrical body 6 made of a glass material and the conductive core material portion 7 without using a paste for the conductive portion. , 33 are formed. If a paste is used for the conductive part, the organic matter contained in the paste evaporates during firing, so the volume of the paste is significantly reduced compared to before firing. Therefore, if only the paste is embedded in the through holes 30 and 31, a large dent will be formed on the surface of the paste after firing. However, in this embodiment, since the metal core part 7 is used for the conductive part, the volume reduction of the conductive part can be eliminated.
- the surface of the base substrate wafer 40 and both ends of the cylindrical body 6 and the core member 7 are substantially flush with each other. That is, the surface of the base substrate wafer 40 and the surfaces of the through electrodes 32 and 33 can be substantially flush with each other.
- the through electrode forming process is completed.
- a conductive material is patterned on the upper surface of the base substrate wafer 40, and as shown in FIGS. 18 and 19, a bonding film forming step for forming the bonding film 35 is performed (S37), and each pair of penetrations is performed.
- the dotted line M shown in FIG. 18, FIG. 28 has shown the cutting line cut
- the through electrodes 32 and 33 are substantially flush with the upper surface of the base substrate wafer 40 as described above. Therefore, the routing electrodes 36 and 37 patterned on the upper surface of the base substrate wafer 40 are in close contact with the through electrodes 32 and 33 without generating a gap or the like therebetween. As a result, it is possible to ensure the electrical conductivity between the one routing electrode 36 and the one through electrode 32 and the electrical conductivity between the other routing electrode 37 and the other through electrode 33. At this point, the second wafer manufacturing process is completed.
- the order of steps in which the routing electrode formation step (S38) is performed after the bonding film formation step (S37) is reversed.
- the bonding film formation is performed after the routing electrode formation step (S38).
- the step (S37) may be performed, or both steps may be performed simultaneously. Regardless of the order of steps, the same effects can be obtained. Therefore, the process order may be changed as necessary.
- a mounting step is performed in which the produced plurality of piezoelectric vibrating reeds 4 are joined to the upper surface of the base substrate wafer 40 via the routing electrodes 36 and 37, respectively (S40).
- bumps B such as gold are formed on the pair of lead-out electrodes 36 and 37, respectively.
- the piezoelectric vibrating piece 4 is pressed against the bump B while heating the bump B to a predetermined temperature.
- the piezoelectric vibrating reed 4 is mechanically supported by the bumps B, and the mount electrodes 16 and 17 and the routing electrodes 36 and 37 are electrically connected.
- the pair of excitation electrodes 15 of the piezoelectric vibrating reed 4 are in a state of being electrically connected to the pair of through electrodes 32 and 33, respectively.
- the piezoelectric vibrating reed 4 is bump-bonded, it is supported in a state where it floats from the upper surface of the base substrate wafer 40.
- an overlaying process for overlaying the lid substrate wafer 50 on the base substrate wafer 40 is performed (S50). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 4 is housed in a cavity C surrounded by the recess 3 a formed in the base substrate wafer 40 and the wafers 40 and 50.
- the superposed two wafers 40 and 50 are put in an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere to perform the anodic bonding (S60). Specifically, a predetermined voltage is applied between the bonding film 35 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding film 35 and the lid substrate wafer 50, and the two are firmly bonded and anodically bonded. Thereby, the piezoelectric vibrating reed 4 can be sealed in the cavity C, and the wafer body 60 shown in FIG. 20 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained. In FIG.
- the wafer body 60 in order to make the drawing easier to see, a state in which the wafer body 60 is disassembled is illustrated, and the bonding film 35 is not illustrated from the base substrate wafer 40.
- the dotted line M shown in FIG. 20 has shown the cutting line cut
- the through holes 30 and 31 formed in the base substrate wafer 40 are completely closed by the through electrodes 32 and 33, so that the airtightness in the cavity C is reduced. Will not be damaged through.
- the cylindrical body 6 and the core member 7 are fixed to each other by firing, and are firmly fixed to the through holes 30 and 31, so that the airtightness in the cavity C is reliably maintained. can do.
- a conductive material is patterned on the lower surface of the base substrate wafer 40 to form a pair of external electrodes 38 and 39 electrically connected to the pair of through electrodes 32 and 33, respectively.
- a plurality of external electrode forming steps are formed (S70).
- the piezoelectric vibrating reed 4 sealed in the cavity C can be operated using the external electrodes 38 and 39.
- the through electrodes 32 and 33 are substantially flush with the lower surface of the base substrate wafer 40 as in the formation of the lead-out electrodes 36 and 37.
- the external electrodes 38 and 39 are in close contact with the through electrodes 32 and 33 without generating a gap or the like therebetween. Thereby, the continuity between the external electrodes 38 and 39 and the through electrodes 32 and 33 can be ensured.
- a fine adjustment step of finely adjusting the frequency of each piezoelectric vibrator 1 sealed in the cavity C to be within a predetermined range is performed (S80). More specifically, a voltage is applied to the pair of external electrodes 38 and 39 formed on the lower surface of the base substrate wafer 40 to vibrate the piezoelectric vibrating reed 4. Then, laser light is irradiated from the outside through the lid substrate wafer 50 while measuring the frequency, and the fine adjustment film 21b of the weight metal film 21 is evaporated. Thereby, since the weight of the tip end side of the pair of vibrating arm portions 10 and 11 changes, the frequency of the piezoelectric vibrating piece 4 can be finely adjusted so as to be within a predetermined range of the nominal frequency.
- a cutting process is performed to cut the bonded wafer body 60 along the cutting line M shown in FIG.
- the piezoelectric vibration piece 4 is sealed in the cavity C formed between the base substrate 2 and the lid substrate 3 that are anodically bonded to each other, and the two-layer structure surface mount type piezoelectric vibration shown in FIG.
- a plurality of children 1 can be manufactured at a time.
- the order of processes in which the fine adjustment process (S80) is performed may be used.
- fine adjustment step (S80) fine adjustment can be performed in the state of the wafer body 60, so that the plurality of piezoelectric vibrators 1 can be finely adjusted more efficiently. Therefore, it is preferable because throughput can be improved.
- an internal electrical characteristic inspection is performed (S100). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value) and the like of the piezoelectric vibrating piece 4 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 of the present embodiment has no dents on the surface, and the through electrodes 32 and 33 can be formed in a substantially flush state with respect to the base substrate 2. 36 and 37 and the external electrodes 38 and 39 can be securely adhered. As a result, stable continuity between the piezoelectric vibrating reed 4 and the external electrodes 38 and 39 can be ensured, and the reliability of the operation performance can be improved to achieve high performance. And since the penetration electrodes 32 and 33 are comprised using the electroconductive core part 7, the very stable electroconductivity can be obtained.
- the quality in the cavity C can be reliably maintained, the quality can be improved also in this respect.
- the cylindrical body 6 of the present embodiment is formed by mixing glass beads with glass beads, deformation and volume reduction are unlikely to occur at the subsequent firing stage. Therefore, high quality through electrodes 32 and 33 can be formed, and the airtightness in the cavity C can be further ensured. Therefore, the quality of the piezoelectric vibrator 1 can be improved. Further, according to the manufacturing method of the present embodiment, a plurality of the piezoelectric vibrators 1 can be manufactured at a time, so that the cost can be reduced.
- the glass frit 6 a is filled in the through holes 30 and 31 with the first squeegee 70, and then the second squeegee 71 is moved to the second squeegee 71. Since the glass frit 6a is filled in the through hole by moving the squeegee 70 in the direction opposite to the moving direction of the squeegee 70, the glass frit 6a is reliably filled in the through holes 30 and 31, and the depression The occurrence of D can be prevented.
- the oscillator 100 is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to the integrated circuit 101.
- the oscillator 100 includes a substrate 103 on which an electronic component 102 such as a capacitor is mounted. On the substrate 103, the integrated circuit 101 for the oscillator is mounted, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101.
- the electronic component 102, the integrated circuit 101, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).
- the piezoelectric vibrating piece 4 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 4 and input to the integrated circuit 101 as an electric signal.
- the input electrical signal is subjected to various processes by the integrated circuit 101 and is output as a frequency signal.
- the piezoelectric vibrator 1 functions as an oscillator.
- an RTC real-time clock
- a function for controlling the time, providing a time, a calendar, and the like can be added.
- the airtightness in the cavity C is sure, the electrical continuity between the piezoelectric vibrating reed 4 and the external electrodes 38 and 39 is stably secured, and the operation reliability is ensured. Since the improved high-quality piezoelectric vibrator 1 is provided, the oscillator 100 itself is similarly stably secured, and the operation reliability can be improved and the quality can be improved. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.
- the portable information device 110 having the above-described piezoelectric vibrator 1 will be described as an example of the electronic device.
- the portable information device 110 according to the present embodiment is represented by, for example, a mobile phone, and is a development and improvement of a wrist watch in the related art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen.
- the portable information device 110 includes the piezoelectric vibrator 1 and a power supply unit 111 for supplying power.
- the power supply unit 111 is made of, for example, a lithium secondary battery.
- the power supply unit 111 includes a control unit 112 that performs various controls, a clock unit 113 that counts time, a communication unit 114 that communicates with the outside, a display unit 115 that displays various types of information, A voltage detection unit 116 that detects the voltage of the functional unit is connected in parallel.
- the power unit 111 supplies power to each functional unit.
- the control unit 112 controls each function unit to control operation of the entire system such as transmission and reception of voice data, measurement and display of the current time, and the like.
- the control unit 112 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.
- the clock unit 113 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 vibrates, and the vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal.
- the output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 112 via the interface circuit, and the current time, current date, calendar information, or the like is displayed on the display unit 115.
- the communication unit 114 has functions similar to those of a conventional mobile phone, and includes a radio unit 117, a voice processing unit 118, a switching unit 119, an amplification unit 120, a voice input / output unit 121, a telephone number input unit 122, and a ring tone generation unit. 123 and a call control memory unit 124.
- the wireless unit 117 exchanges various data such as audio data with the base station via the antenna 125.
- the audio processing unit 118 encodes and decodes the audio signal input from the radio unit 117 or the amplification unit 120.
- the amplifying unit 120 amplifies the signal input from the audio processing unit 118 or the audio input / output unit 121 to a predetermined level.
- the voice input / output unit 121 includes a speaker, a microphone, and the like, and amplifies a ringtone and a received voice or collects a voice.
- the ring tone generator 123 generates a ring tone in response to a call from the base station.
- the switching unit 119 switches the amplifying unit 120 connected to the voice processing unit 118 to the ringing tone generating unit 123 only when an incoming call is received, so that the ringing tone generated in the ringing tone generating unit 123 is transmitted via the amplifying unit 120.
- the call control memory unit 124 stores a program related to incoming / outgoing call control of communication.
- the telephone number input unit 122 includes, for example, a number key from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.
- the voltage detection unit 116 detects the voltage drop and notifies the control unit 112 of the voltage drop.
- the predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 114, and is, for example, about 3V.
- the control unit 112 prohibits the operations of the radio unit 117, the voice processing unit 118, the switching unit 119, and the ring tone generation unit 123. In particular, it is essential to stop the operation of the wireless unit 117 with high power consumption. Further, the display unit 115 displays that the communication unit 114 has become unusable due to insufficient battery power.
- the operation of the communication unit 114 can be prohibited by the voltage detection unit 116 and the control unit 112, and that effect can be displayed on the display unit 115.
- This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 115.
- the function of the communication part 114 can be stopped more reliably by providing the power supply cutoff part 126 that can selectively cut off the power of the part related to the function of the communication part 114.
- the airtightness in the cavity C is reliable, the electrical continuity between the piezoelectric vibrating reed 4 and the external electrodes 38 and 39 is stably ensured, and the operation is reliable. Since the high-quality piezoelectric vibrator 1 with improved performance is provided, the continuity of the portable information device itself can be ensured in the same manner, and the operation reliability can be improved and the quality can be improved. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.
- the radio-controlled timepiece 130 includes the piezoelectric vibrator 1 electrically connected to the filter unit 131.
- the radio-controlled timepiece 130 receives a standard radio wave including timepiece information and is accurate. It is a clock with a function of automatically correcting and displaying the correct time.
- transmitting stations transmitting stations that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves.
- Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.
- the antenna 132 receives a long standard wave of 40 kHz or 60 kHz.
- the long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave.
- the received long standard wave is amplified by the amplifier 133 and filtered and tuned by the filter unit 131 having the plurality of piezoelectric vibrators 1.
- the piezoelectric vibrator 1 according to this embodiment includes crystal vibrator portions 138 and 139 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.
- the filtered signal having a predetermined frequency is detected and demodulated by the detection and rectification circuit 134. Subsequently, the time code is taken out via the waveform shaping circuit 135 and counted by the CPU 136.
- the CPU 136 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 137, and accurate time information is displayed. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator units 138 and 139 are preferably vibrators having the tuning fork type structure described above.
- the frequency of the long standard radio wave is different overseas.
- a standard radio wave of 77.5 KHz is used. Accordingly, when the radio timepiece 130 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.
- the airtightness in the cavity C is reliable, the electrical connection between the piezoelectric vibrating reed 4 and the external electrodes 38 and 39 is stably ensured, and the operation reliability is ensured. Since the high-quality piezoelectric vibrator 1 with improved quality is provided, the radio-controlled timepiece itself can be stably secured in the same manner, and the operation reliability can be improved and the quality can be improved. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.
- the through holes 30 and 31 are formed in a conical shape having a tapered cross section, but may be a straight cylindrical shape instead of a tapered cross section.
- the shape of the core part 7 was formed in the column shape was demonstrated, you may make it a prism. Even in this case, the same effects can be obtained.
- the base substrate wafer 40 base substrate wafer 40
- the cylindrical body 6 and the core member 7 are thermally expanded in the same manner. Therefore, due to the difference in thermal expansion coefficient, excessive pressure is applied to the base substrate wafer 40 and the cylindrical body 6 to generate cracks, etc., or between the cylindrical body 6 and the through holes 30 and 31, or the cylindrical body. There is no gap between 6 and the core member 7. Therefore, a higher quality through electrode can be formed, and as a result, the piezoelectric vibrator 1 can be further improved in quality.
- the grooved piezoelectric vibrating piece 4 in which the groove portions 18 are formed on both surfaces of the vibrating arm portions 10 and 11 has been described as an example.
- the piezoelectric vibrating piece may be used.
- the tuning fork type piezoelectric vibrating piece 4 has been described as an example.
- the tuning fork type is not limited to the tuning fork type.
- it may be a thickness sliding vibration piece.
- the base substrate 2 and the lid substrate 3 are anodically bonded via the bonding film 35.
- the present invention is not limited to anodic bonding.
- anodic bonding is preferable because both substrates 2 and 3 can be firmly bonded.
- the piezoelectric vibrating reed 4 is bump-bonded, but is not limited to bump bonding.
- the piezoelectric vibrating reed 4 may be joined with a conductive adhesive.
- the piezoelectric vibrating reed 4 can be lifted from the upper surface of the base substrate 2, and a minimum vibration gap necessary for vibration can be secured naturally. Therefore, it is preferable to perform bump bonding.
- the method for manufacturing a piezoelectric vibrator according to the present invention can be applied to a surface mount type (SMD) piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between two bonded substrates.
- SMD surface mount type
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
この2層構造タイプの圧電振動子は、3層構造のものに比べて薄型化を図ることができるなどの点において優れており、好適に使用されている。このような2層構造タイプの圧電振動子の一つとして、ベース基板を貫通するように形成された導電部材を利用して、圧電振動片とベース基板に形成された外部電極とを導通させた圧電振動子が知られている(例えば、特許文献1および特許文献2参照)。
一般的に導電ペーストを使用する場合には、焼成して硬化させる必要がある。つまり、スルーホール204内に導電ペーストを埋め込んだ後、焼成を行って硬化させる必要がある。ところが、焼成を行うと、導電ペーストに含まれる有機物が蒸発により消失してしまうため、通常、焼成後の体積が焼成前に比べて減少してしまう(例えば、導電ペーストとしてAgペーストを用いた場合には、体積が略20%程度減少してしまう)。そのため、導電ペーストを利用して導電部材205を形成したとしても、表面に凹みが発生してしまったり、ひどい場合には貫通孔が中心に開いてしまったりする虞がある。
その結果、キャビティC内の気密が損なわれたり、圧電振動片203と外部電極206との導通性が損なわれたりする可能性があった。
即ち、本発明に係る圧電振動子の製造方法は、互いに接合されたベース基板とリッド基板との間に形成されたキャビティ内に圧電振動片が封止された圧電振動子の製造方法において、平板状の土台部と、該土台部の表面に直交する方向に沿って延在する芯材部と、を有する導電性の鋲体の前記芯材部を前記ベース基板の貫通孔内に挿入し、前記ベース基板の第1面に鋲体の土台部を当接させる工程と、前記ベース基板の第2面にペースト状のガラスフリットを塗布し、該第2面にアタック角度をもって当接する第1スキージを、前記貫通孔の一側から一方向に向かって前記第2面に沿って移動させて前記ガラスフリットを前記貫通孔内に充填する工程と、前記第2面にアタック角度をもって当接する第2スキージを、前記一側の前記貫通孔を介した反対側から前記一方向の逆方向に向かって前記第2面に沿って移動させて、前記第2面上に余分に塗布された前記ガラスフリットを前記貫通孔内に充填する工程と、前記ガラスフリットを焼成して硬化させる工程と、を有することを特徴としている。
このようなアタック角度でベース基板の第2面に当接する第1スキージ及び第2スキージを移動させることにより、貫通孔内にガラスフリットをより確実に充填することができる。
このような形状の第1スキージ及び第2スキージによってガラスフリットの充填作業を行えば、貫通孔内にガラスフリットを確実に充填することができるとともに、逃げ面が形成されていることから第1スキージ及び第2スキージの移動の際の抵抗を低減させて、充填作業を円滑に行うことができる。
このような特徴の発振器によれば、貫通孔内にガラスフリットを確実に充填して電極を形成しているため、キャビティ内の気密性や圧電振動片と外部電極との導通性を確保することが可能となる。
このような特徴の電子機器によれば、貫通孔内にガラスフリットを確実に充填して電極を形成しているため、キャビティ内の気密性や圧電振動片と外部電極との導通性を確保することが可能となる。
このような特徴の電波時計によれば、貫通孔内にガラスフリットを確実に充填して電極を形成しているため、キャビティ内の気密性や圧電振動片と外部電極との導通性を確保することが可能となる。
2 ベース基板
3 リッド基板
3a キャビティ用の凹部
4 圧電振動片
7 芯材
6 筒体
6a ガラスフリット
6c 筒体の中心孔
30,31 スルーホール(貫通孔)
32,33 貫通電極
36,37 引き回し電極
38,39 外部電極
40 ベース基板用ウエハ
50 リッド基板用ウエハ
70 第1スキージ
70a アタック面
70b 逃げ面
71 第2スキージ
71a アタック面
71b 逃げ面
100 発振器
101 発振器の集積回路
110 携帯情報機器(電子機器)
113 電子機器の計時部
130 電波時計
131 電波時計のフィルタ部
B バンプ
C キャビティ
D 窪み
α1,α2 アタック角
β1,β2 逃げ角
図1~図4に示すように、本実施形態の圧電振動子1は、ベース基板2とリッド基板3とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片4が収納された表面実装型の圧電振動子である。なお、図4においては、図面を見易くするために後述する励振電極15、引き出し電極19,20、マウント電極16,17及び重り金属膜21の図示を省略している。
また、本実施形態の圧電振動片4は、一対の振動腕部10、11の両主面上に、該振動腕部10、11の長手方向に沿ってそれぞれ形成された溝部18を備えている。この溝部18は、振動腕部10、11の基端側から略中間付近まで形成されている。
なお、上述した励振電極15、マウント電極16,17及び引き出し電極19,20は、例えば、クロム(Cr)、ニッケル(Ni)、アルミニウム(Al)やチタン(Ti)等の導電性膜の被膜により形成されたものである。
この凹部3aは、両基板2、3が重ね合わされたときに、圧電振動片4を収容するキャビティCとなるキャビティ用の凹部である。そして、リッド基板3は、この凹部3aをベース基板2側に対向させた状態で該ベース基板2に対して陽極接合されている。
このベース基板2には、該ベース基板2を貫通する一対のスルーホール(貫通孔)30,31が形成されている。この際、一対のスルーホール30,31は、キャビティC内に収まるように形成されている。より詳しく説明すると、本実施形態のスルーホール30,31は、マウントされた圧電振動片4の基部12側に対応した位置に一方のスルーホール30が形成され、振動腕部10、11の先端側に対応した位置に他方のスルーホール31が形成されている。また、本実施形態では、ベース基板2の下面から上面に向かって漸次径が縮径した断面テーパ状のスルーホールを例に挙げて説明するが、この場合に限られず、ベース基板2を真っ直ぐに貫通するスルーホールでも構わない。いずれにしても、ベース基板2を貫通していれば良い。
なお、貫通電極32,33は、導電性の芯材部7を通して電気導通性が確保されている。
第2スキージは71は、第1スキージ70と同様に、略上下方向に延びる棒状あるいは板状をなしており、その下部先端には、ベース基板用ウエハ40の表面に対して所定のアタック角度α2°で傾斜して当接するアタック面71aと、該アタック面71aとベース基板用ウェーハ40の表面との当接箇所からベース基板用ウエハ40の表面に対して所定の逃げ角β2°で傾斜して延びる逃げ面71bとを有している。
このような第2スキージ71の移動により、図14(c)に示すように、第1スキージ70の移動によってはスルーホール30,31内に充填されずにベース基板用ウエハ40の表面に残存したガラスフリット6aが、該表面上から除去されてスルーホール30,31内、具体的には、該スルーホール30,31内の上記窪みDに充填される。
また、第1スキージ70及び第2スキージ71はそれぞれアタック角α1,α2及び逃げ角β1,β2が同一の値に設定されていてもよいし、異なる値に設定されていてもよい。なお、これら同一の値をした場合には、第1スキージ70及び第2スキージ71を同一のスキージでもって構成することができ、コスト上の観点から好ましい。
また、同時にベース基板用ウエハ40の裏面(鋲体9の土台部8が配されていない側の面)を研磨して平坦面になるようにする。そして、芯材部7の先端が露出するまで研磨する。その結果、図17に示すように、筒体6と芯材部7とが一体的に固定された一対の貫通電極32,33を複数得ることができる。
特に、圧電振動片4は、バンプ接合されるため、ベース基板用ウエハ40の上面から浮いた状態で支持される。
特に、この工程を行う場合も引き回し電極36,37の形成時と同様に、ベース基板用ウエハ40の下面に対して貫通電極32,33が略面一な状態となっているため、パターニングされた外部電極38,39は、間に隙間等を発生させることなく貫通電極32,33に対して密着した状態で接する。これにより、外部電極38,39と貫通電極32,33との導通性を確実なものにすることができる。
なお、切断工程(S90)を行って個々の圧電振動子1に小片化した後に、微調工程(S80)を行う工程順序でも構わない。但し、上述したように、微調工程(S80)を先に行うことで、ウエハ体60の状態で微調を行うことができるため、複数の圧電振動子1をより効率良く微調することができる。よって、スループットの向上化を図ることができるため好ましい。
また、本実施形態の製造方法によれば、上記圧電振動子1を一度に複数製造することができるため、低コスト化を図ることができる。
次に、本発明に係る発振器の一実施形態について、図21を参照しながら説明する。
本実施形態の発振器100は、図21に示すように、圧電振動子1を、集積回路101に電気的に接続された発振子として構成したものである。この発振器100は、コンデンサ等の電子部品102が実装された基板103を備えている。基板103には、発振器用の上記集積回路101が実装されており、この集積回路101の近傍に、圧電振動子1が実装されている。これら電子部品102、集積回路101及び圧電振動子1は、図示しない配線パターンによってそれぞれ電気的に接続されている。なお、各構成部品は、図示しない樹脂によりモールドされている。
また、集積回路101の構成を、例えば、RTC(リアルタイムクロック)モジュール等を要求に応じて選択的に設定することで、時計用単機能発振器等の他、当該機器や外部機器の動作日や時刻を制御したり、時刻やカレンダー等を提供したりする機能を付加することができる。
次に、本発明に係る電子機器の一実施形態について、図22を参照して説明する。なお電子機器として、上述した圧電振動子1を有する携帯情報機器110を例にして説明する。
始めに本実施形態の携帯情報機器110は、例えば、携帯電話に代表されるものであり、従来技術における腕時計を発展、改良したものである。外観は腕時計に類似し、文字盤に相当する部分に液晶ディスプレイを配し、この画面上に現在の時刻等を表示させることができるものである。また、通信機として利用する場合には、手首から外し、バンドの内側部分に内蔵されたスピーカ及びマイクロフォンによって、従来技術の携帯電話と同様の通信を行うことが可能である。しかしながら、従来の携帯電話と比較して、格段に小型化及び軽量化されている。
無線部117は、音声データ等の各種データを、アンテナ125を介して基地局と送受信のやりとりを行う。音声処理部118は、無線部117又は増幅部120から入力された音声信号を符号化及び複号化する。増幅部120は、音声処理部118又は音声入出力部121から入力された信号を、所定のレベルまで増幅する。音声入出力部121は、スピーカやマイクロフォン等からなり、着信音や受話音声を拡声したり、音声を集音したりする。
なお、呼制御メモリ部124は、通信の発着呼制御に係るプログラムを格納する。また、電話番号入力部122は、例えば、0から9の番号キー及びその他のキーを備えており、これら番号キー等を押下することにより、通話先の電話番号等が入力される。
なお、通信部114の機能に係る部分の電源を、選択的に遮断することができる電源遮断部126を備えることで、通信部114の機能をより確実に停止することができる。
次に、本発明に係る電波時計の一実施形態について、図23を参照して説明する。
本実施形態の電波時計130は、図23に示すように、フィルタ部131に電気的に接続された圧電振動子1を備えたものであり、時計情報を含む標準の電波を受信して、正確な時刻に自動修正して表示する機能を備えた時計である。
日本国内には、福島県(40kHz)と佐賀県(60kHz)とに、標準の電波を送信する送信所(送信局)があり、それぞれ標準電波を送信している。40kHz若しくは60kHzのような長波は、地表を伝播する性質と、電離層と地表とを反射しながら伝播する性質とを併せもつため、伝播範囲が広く、上述した2つの送信所で日本国内を全て網羅している。
アンテナ132は、40kHz若しくは60kHzの長波の標準電波を受信する。長波の標準電波は、タイムコードと呼ばれる時刻情報を、40kHz若しくは60kHzの搬送波にAM変調をかけたものである。受信された長波の標準電波は、アンプ133によって増幅され、複数の圧電振動子1を有するフィルタ部131によって濾波、同調される。
本実施形態における圧電振動子1は、上記搬送周波数と同一の40kHz及び60kHzの共振周波数を有する水晶振動子部138、139をそれぞれ備えている。
続いて、波形整形回路135を介してタイムコードが取り出され、CPU136でカウントされる。CPU136では、現在の年、積算日、曜日、時刻等の情報を読み取る。読み取られた情報は、RTC137に反映され、正確な時刻情報が表示される。
搬送波は、40kHz若しくは60kHzであるから、水晶振動子部138、139は、上述した音叉型の構造を持つ振動子が好適である。
例えば、上記実施形態では、スルーホール30,31の形状を断面テーパ状の円錐形状に形成したが、断面テーパ状ではなくストレート形状の円柱形状にしてもよい。
また、芯材部7の形状を円柱状で形成した場合の説明をしたが、角柱にしてもよい。この場合であっても、やはり同様の作用効果を奏することができる。
この場合には、焼成を行う際に、ベース基板用ウエハ40、筒体6及び芯材部7の3つが、それぞれ同じように熱膨張する。従って、熱膨張係数の違いによって、ベース基板用ウエハ40や筒体6に過度に圧力を作用させてクラック等を発生させたり、筒体6とスルーホール30,31との間、或いは、筒体6と芯材部7との間に隙間が開いてしまったりすることがない。そのため、より高品質な貫通電極を形成することができ、その結果、圧電振動子1のさらなる高品質化を図ることができる。
また、上記実施形態では、音叉型の圧電振動片4を例に挙げて説明したが、音叉型に限られるものではない。例えば、厚み滑り振動片としても構わない。
また、上記実施形態では、圧電振動片4をバンプ接合したが、バンプ接合に限定されるものではない。例えば、導電性接着剤により圧電振動片4を接合しても構わない。但し、バンプ接合することで、圧電振動片4をベース基板2の上面から浮かすことができ、振動に必要な最低限の振動ギャップを自然と確保することができる。よって、バンプ接合することが好ましい。
Claims (6)
- 互いに接合されたベース基板とリッド基板との間に形成されたキャビティ内に圧電振動片が封止された圧電振動子の製造方法において、
平板状の土台部と、該土台部の表面に直交する方向に沿って延在する芯材部と、を有する導電性の鋲体の前記芯材部を前記ベース基板の貫通孔内に挿入し、前記ベース基板の第1面に鋲体の土台部を当接させる工程と、
前記ベース基板の第2面にペースト状のガラスフリットを塗布し、該第2面にアタック角度をもって当接する第1スキージを、前記貫通孔の一側から一方向に向かって前記第2面に沿って移動させて前記ガラスフリットを前記貫通孔内に充填する工程と、
前記第2面にアタック角度をもって当接する第2スキージを、前記一側の前記貫通孔を介した反対側から前記一方向の逆方向に向かって前記第2面に沿って移動させて、前記第2面上に余分に塗布された前記ガラスフリットを前記貫通孔内に充填する工程と、
前記ガラスフリットを焼成して硬化させる工程と、を有することを特徴とする圧電振動子の製造方法。 - 請求項1に記載の圧電振動子の製造方法であって、
前記第1スキージのアタック角度及び前記第2スキージのアタック角度が、5°~45°の範囲内に設定されていることを特徴とする圧電振動子の製造方法。 - 請求項1又は2のいずれか一項に記載の圧電振動子の製造方法であって、
前記第1スキージ及び前記第2スキージが、
前記第2面に対して所定のアタック角度で傾斜して当接するアタック面と、
前記第2面と前記アタック面との当接箇所から前記第1スキージ及び前記第2スキージの各移動方向の後方に向かうに従って上方に向かって漸次傾斜する逃げ面と、を有することを特徴とする圧電振動子の製造方法。 - 請求項1から3のいずれかに一項に記載の方法で製造された圧電振動子が、発振子として集積回路に電気的に接続されていることを特徴とする発振器。
- 請求項1から3のいずれか一項に記載の方法で製造された圧電振動子が、計時部に電気的に接続されていることを特徴とする電子機器。
- 請求項1から3のいずれか一項に記載の方法で製造された圧電振動子が、フィルタ部に電気的に接続されていることを特徴とする電波時計。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2009/053333 WO2010097904A1 (ja) | 2009-02-25 | 2009-02-25 | 圧電振動子の製造方法、発振器、電子機器および電波時計 |
CN2009801576542A CN102334282A (zh) | 2009-02-25 | 2009-02-25 | 压电振动器的制造方法、振荡器、电子设备及电波钟 |
JP2011501386A JP5258957B2 (ja) | 2009-02-25 | 2009-02-25 | 圧電振動子の製造方法及び基板の製造方法 |
TW099100178A TW201114176A (en) | 2009-02-25 | 2010-01-06 | Piezoelectric vibrator manufacturing method, oscillator, electronic device and radio-controlled clock |
US13/167,283 US20110249535A1 (en) | 2009-02-25 | 2011-06-23 | Method of manufacturing piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP2009/053333 WO2010097904A1 (ja) | 2009-02-25 | 2009-02-25 | 圧電振動子の製造方法、発振器、電子機器および電波時計 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US13/167,283 Continuation US20110249535A1 (en) | 2009-02-25 | 2011-06-23 | Method of manufacturing piezoelectric vibrator, oscillator, electronic device, and radio-controlled timepiece |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2010097904A1 true WO2010097904A1 (ja) | 2010-09-02 |
Family
ID=42665130
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/053333 WO2010097904A1 (ja) | 2009-02-25 | 2009-02-25 | 圧電振動子の製造方法、発振器、電子機器および電波時計 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110249535A1 (ja) |
JP (1) | JP5258957B2 (ja) |
CN (1) | CN102334282A (ja) |
TW (1) | TW201114176A (ja) |
WO (1) | WO2010097904A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150129641A1 (en) * | 2013-11-14 | 2015-05-14 | Panasonic Intellectual Property Management Co., Ltd. | Screen printing machine, electronic component mounting system, and screen printing method |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014086522A (ja) * | 2012-10-23 | 2014-05-12 | Seiko Epson Corp | 電子デバイスの製造方法、電子部品用容器の接合装置、電子機器、及び移動体機器 |
JP6365111B2 (ja) * | 2013-11-12 | 2018-08-01 | セイコーエプソン株式会社 | 配線基板の製造方法、配線基板、素子収納用パッケージ、電子デバイス、電子機器および移動体 |
JP6635605B2 (ja) * | 2017-10-11 | 2020-01-29 | 国立研究開発法人理化学研究所 | 電流導入端子並びにそれを備えた圧力保持装置及びx線撮像装置 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003209198A (ja) * | 2001-11-09 | 2003-07-25 | Nippon Sheet Glass Co Ltd | 電子部品パッケージ |
JP2007235121A (ja) * | 2006-02-06 | 2007-09-13 | San Nopco Ltd | 樹脂充填基板の製造方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0619211Y2 (ja) * | 1987-12-09 | 1994-05-18 | 東洋通信機株式会社 | 表面実装用電子部品の電極構造 |
US4973564A (en) * | 1989-09-05 | 1990-11-27 | Corning Incorporated | Bonding frits for ceramic composites |
JPH0629767A (ja) * | 1992-07-09 | 1994-02-04 | Murata Mfg Co Ltd | 圧電共振部品の製造方法 |
JPH0645022A (ja) * | 1992-07-21 | 1994-02-18 | Shinko Electric Ind Co Ltd | 表面実装型気密封止端子 |
JP2002124845A (ja) * | 2000-08-07 | 2002-04-26 | Nippon Sheet Glass Co Ltd | 水晶振動子パッケージ及びその製造方法 |
JP3702961B2 (ja) * | 2002-10-04 | 2005-10-05 | 東洋通信機株式会社 | 表面実装型sawデバイスの製造方法 |
JP4010293B2 (ja) * | 2003-10-21 | 2007-11-21 | セイコーエプソン株式会社 | 金属パッケージの製造方法 |
JP3960320B2 (ja) * | 2004-04-19 | 2007-08-15 | 松下電器産業株式会社 | 配線基板とそれを用いたバランと配線基板の製造方法 |
-
2009
- 2009-02-25 JP JP2011501386A patent/JP5258957B2/ja not_active Expired - Fee Related
- 2009-02-25 CN CN2009801576542A patent/CN102334282A/zh active Pending
- 2009-02-25 WO PCT/JP2009/053333 patent/WO2010097904A1/ja active Application Filing
-
2010
- 2010-01-06 TW TW099100178A patent/TW201114176A/zh unknown
-
2011
- 2011-06-23 US US13/167,283 patent/US20110249535A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003209198A (ja) * | 2001-11-09 | 2003-07-25 | Nippon Sheet Glass Co Ltd | 電子部品パッケージ |
JP2007235121A (ja) * | 2006-02-06 | 2007-09-13 | San Nopco Ltd | 樹脂充填基板の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20150129641A1 (en) * | 2013-11-14 | 2015-05-14 | Panasonic Intellectual Property Management Co., Ltd. | Screen printing machine, electronic component mounting system, and screen printing method |
US9796035B2 (en) * | 2013-11-14 | 2017-10-24 | Panasonic Intellectual Property Management Co., Ltd. | Screen printing machine, electronic component mounting system, and screen printing method |
Also Published As
Publication number | Publication date |
---|---|
TW201114176A (en) | 2011-04-16 |
US20110249535A1 (en) | 2011-10-13 |
JP5258957B2 (ja) | 2013-08-07 |
CN102334282A (zh) | 2012-01-25 |
JPWO2010097904A1 (ja) | 2012-08-30 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5103297B2 (ja) | 圧電振動子の製造方法 | |
JP5135510B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5091261B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5147868B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5065494B2 (ja) | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 | |
JP5180975B2 (ja) | 圧電振動子の製造方法および圧電振動子 | |
JP5189378B2 (ja) | 圧電振動子の製造方法 | |
JP5091262B2 (ja) | 圧電振動子の製造方法、固定治具、並びに圧電振動子、発振器、電子機器及び電波時計 | |
JP5258958B2 (ja) | 圧電振動子の製造方法及び基板の製造方法 | |
JP2011049665A (ja) | 圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP2011190509A (ja) | マスク材、圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP2011160350A (ja) | 圧電振動片、圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP2012199735A (ja) | 圧電振動子の製造方法、圧電振動子、該圧電振動子を有する発振器、電子機器及び電波時計 | |
JP2012169865A (ja) | 圧電振動片、圧電振動子、発振器、電子機器、及び電波時計 | |
WO2009104328A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
WO2009104314A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5258957B2 (ja) | 圧電振動子の製造方法及び基板の製造方法 | |
WO2010097905A1 (ja) | パッケージの製造方法及び圧電振動子、発振器、電子機器、並びに電波時計 | |
JP2011049664A (ja) | パッケージの製造方法、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP2011041069A (ja) | パッケージの製造方法、圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP2009194789A (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP2011176502A (ja) | パッケージの製造方法、圧電振動子、発振器、電子機器および電波時計 | |
JP2013187639A (ja) | 圧電振動片の製造方法 | |
JP2012169788A (ja) | パッケージ製造方法、圧電振動子、発振器、電子機器および電波時計 | |
JP2011049993A (ja) | パッケージの製造方法、圧電振動子の製造方法、圧電振動子、発振器、電子機器および電波時計 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980157654.2 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09840757 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2011501386 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09840757 Country of ref document: EP Kind code of ref document: A1 |