WO2009104314A1 - 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 - Google Patents
圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 Download PDFInfo
- Publication number
- WO2009104314A1 WO2009104314A1 PCT/JP2008/070941 JP2008070941W WO2009104314A1 WO 2009104314 A1 WO2009104314 A1 WO 2009104314A1 JP 2008070941 W JP2008070941 W JP 2008070941W WO 2009104314 A1 WO2009104314 A1 WO 2009104314A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- base substrate
- substrate wafer
- paste
- electrode
- electrodes
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 115
- 239000000758 substrate Substances 0.000 claims abstract description 528
- 229910052751 metal Inorganic materials 0.000 claims abstract description 72
- 239000002184 metal Substances 0.000 claims abstract description 72
- 235000014676 Phragmites communis Nutrition 0.000 claims abstract description 57
- 239000010419 fine particle Substances 0.000 claims abstract description 52
- 235000012431 wafers Nutrition 0.000 claims description 431
- 238000005498 polishing Methods 0.000 claims description 131
- 230000008569 process Effects 0.000 claims description 96
- 238000004519 manufacturing process Methods 0.000 claims description 95
- 238000005520 cutting process Methods 0.000 claims description 43
- 238000010304 firing Methods 0.000 claims description 43
- 238000011049 filling Methods 0.000 claims description 33
- 244000273256 Phragmites communis Species 0.000 claims description 16
- 230000000149 penetrating effect Effects 0.000 claims description 16
- 238000001354 calcination Methods 0.000 claims description 9
- 238000007789 sealing Methods 0.000 claims description 6
- 239000002245 particle Substances 0.000 claims description 5
- 230000005284 excitation Effects 0.000 description 60
- 238000010586 diagram Methods 0.000 description 44
- 238000007517 polishing process Methods 0.000 description 23
- 238000005429 filling process Methods 0.000 description 16
- 230000007423 decrease Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 13
- 230000015572 biosynthetic process Effects 0.000 description 12
- 239000004020 conductor Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 239000005361 soda-lime glass Substances 0.000 description 12
- 238000004891 communication Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 10
- 230000035515 penetration Effects 0.000 description 10
- 238000012545 processing Methods 0.000 description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 9
- 238000000605 extraction Methods 0.000 description 9
- 239000011521 glass Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 239000013078 crystal Substances 0.000 description 8
- 238000011038 discontinuous diafiltration by volume reduction Methods 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 230000004048 modification Effects 0.000 description 7
- 238000012986 modification Methods 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 239000011651 chromium Substances 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 230000001771 impaired effect Effects 0.000 description 6
- 238000007689 inspection Methods 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000000835 fiber Substances 0.000 description 5
- -1 for example Substances 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- 239000005416 organic matter Substances 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000003487 electrochemical reaction Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 3
- 239000011159 matrix material Substances 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 238000005488 sandblasting Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000001902 propagating effect Effects 0.000 description 2
- 230000009469 supplementation Effects 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- 210000000707 wrist Anatomy 0.000 description 2
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001111 Fine metal Inorganic materials 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 102220475756 Probable ATP-dependent RNA helicase DDX6_S30A_mutation Human genes 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000005433 ionosphere Substances 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000005236 sound signal Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
- H03H9/10—Mounting in enclosures
- H03H9/1007—Mounting in enclosures for bulk acoustic wave [BAW] devices
- H03H9/1014—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device
- H03H9/1021—Mounting in enclosures for bulk acoustic wave [BAW] devices the enclosure being defined by a frame built on a substrate and a cap, the frame having no mechanical contact with the BAW device the BAW device being of the cantilever type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/21—Crystal tuning forks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
- H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
- H05K3/4053—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques
- H05K3/4061—Through-connections; Vertical interconnect access [VIA] connections by thick-film techniques for via connections in inorganic insulating substrates
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/095—Dispersed materials, e.g. conductive pastes or inks for polymer thick films, i.e. having a permanent organic polymeric binder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0263—Details about a collection of particles
- H05K2201/0272—Mixed conductive particles, i.e. using different conductive particles, e.g. differing in shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/02—Details related to mechanical or acoustic processing, e.g. drilling, punching, cutting, using ultrasound
- H05K2203/025—Abrading, e.g. grinding or sand blasting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/42—Piezoelectric device making
Definitions
- the present invention relates to a surface mount type (SMD) piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between two bonded substrates, and a piezoelectric vibrator for manufacturing the piezoelectric vibrator.
- the present invention relates to a manufacturing method, an oscillator having a piezoelectric vibrator, an electronic device, and a radio timepiece. This application is based on Japanese Patent Application No. 2008-35508, Japanese Patent Application No. 2008-36419, and Japanese Patent Application No. 2008-35511, and the contents thereof are incorporated.
- a piezoelectric vibrator using a crystal or the like as a timing source such as a time source or a control signal, a reference signal source, or the like is used in a mobile phone or a portable information terminal device.
- Various piezoelectric vibrators of this type are known, and one of them is a surface-mount type piezoelectric vibrator.
- this type of piezoelectric vibrator a three-layer structure type in which a piezoelectric substrate on which a piezoelectric vibrating piece is formed is joined so as to be sandwiched from above and below by a base substrate and a lid substrate is known. In this case, the piezoelectric vibrator is housed in a cavity (sealed chamber) formed between the base substrate and the lid substrate.
- a two-layer structure type has been developed instead of the three-layer structure type described above.
- This type of piezoelectric vibrator has a two-layer structure in which a base substrate and a lid substrate are directly bonded, and a piezoelectric vibrating piece is accommodated in a cavity formed between the two substrates.
- the two-layer structure type piezoelectric vibrator is excellent in that it can be made thinner than the three-layer structure, and is preferably used.
- a conductive member formed so as to penetrate the base substrate is used to conduct the piezoelectric vibrating piece and the external electrode formed on the base substrate. Piezoelectric vibrators are known (see Patent Document 1 and Patent Document 2).
- the piezoelectric vibrator 600 includes a base substrate 601 and a lid substrate 602 that are anodically bonded to each other via a bonding film 607, and a cavity C formed between the substrates 601 and 602. And a piezoelectric vibrating piece 603 sealed in the container.
- the piezoelectric vibrating piece 603 is, for example, a tuning fork type vibrating piece, and is mounted on the upper surface of the base substrate 601 in the cavity C via the conductive adhesive E.
- the base substrate 601 and the lid substrate 602 are insulating substrates made of, for example, ceramic or glass.
- a through-hole 604 penetrating through the substrate 601 is formed in the base substrate 601 of both the substrates 601 and 602.
- a conductive member 605 is embedded in the through hole 604 so as to close the through hole 604.
- the conductive member 605 is electrically connected to the external electrode 606 formed on the lower surface of the base substrate 601 and is electrically connected to the piezoelectric vibrating piece 603 mounted in the cavity C.
- the conductive member 605 blocks the through hole 604 to maintain airtightness in the cavity C, and electrically connects the piezoelectric vibrating piece 603 and the external electrode 606. It plays a big role. In particular, if the close contact with the through hole 604 is insufficient, the airtightness in the cavity C may be impaired, and if the contact with the conductive adhesive E or the external electrode 606 is insufficient, The malfunction of the piezoelectric vibrating piece 603 will be caused.
- Patent Document 1 and Patent Document 2 describe that the conductive member 605 is formed of a conductive paste (Ag paste, Au-Sn paste, etc.), how to actually form the conductive member 605, etc. No specific manufacturing method is described.
- a conductive paste when used, it needs to be baked and cured. That is, after the conductive paste is embedded in the through hole 604, it is necessary to perform baking and cure.
- the organic matter contained in the conductive paste disappears due to evaporation when firing, the volume after firing usually decreases compared to before firing (for example, when Ag paste is used as the conductive paste) The volume is reduced by about 20%). Therefore, even if the conductive member 605 is formed using the conductive paste, there is a risk that a dent will be generated on the surface or, if it is severe, the through hole may open at the center. As a result, there is a possibility that airtightness in the cavity C is impaired, or electrical conductivity between the piezoelectric vibrating piece 603 and the external electrode 606 is impaired.
- the present invention has been made in view of such circumstances, and its purpose is to maintain high airtightness in the cavity and to ensure high-quality that ensures stable continuity between the piezoelectric vibrating piece and the external electrode. It is to provide a two-layer structure type surface mount type piezoelectric vibrator. Another object of the present invention is to provide a piezoelectric vibrator manufacturing method for efficiently manufacturing the piezoelectric vibrator at a time, an oscillator having the piezoelectric vibrator, an electronic device, and a radio timepiece.
- a piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between a base substrate and a lid substrate bonded to each other is used for the base substrate.
- a recess forming step of forming a plurality of cavity recesses on a lid substrate wafer is performed. These recesses are recesses that become cavities when the two wafers are overlapped later.
- a through electrode forming step for forming a plurality of through electrodes on the base substrate wafer is performed at the same time as or before and after this step. At this time, a plurality of through electrodes are formed so as to be accommodated in the recesses formed in the lid substrate wafer when the two wafers are overlapped later.
- This through electrode forming process is roughly divided into two operation sequences depending on the timing of the polishing process for polishing the base substrate wafer.
- the polishing process is performed after the paste containing a plurality of metal fine particles is finally fired will be described.
- a holding hole forming step for forming a plurality of holding holes for holding the paste in the base substrate wafer is performed.
- a filling process for filling the plurality of holding holes without any gaps and closing the holding holes is performed.
- a firing process is performed in which the filled paste is temporarily fired and then fired and cured.
- the embedded paste is temporarily fired.
- the paste cured by pre-baking evaporates most of the organic substances in the paste at the time of pre-baking, so that the volume is reduced as compared with the filling process. Therefore, a dent is inevitably generated on the surface of the paste. Therefore, a new paste corresponding to the amount of paste reduced by the pre-baking is supplemented to the paste after the pre-baking. Thereby, since the new paste is filled in the recessed portion, the surface becomes flat.
- the entire paste is temporarily fired again in order to prevent the organic matter inside the refilled paste from being rapidly evaporated during the main firing.
- the main paste is fired. Thereby, the paste embedded in the filling step and the newly replenished paste are completely cured and integrated, and are firmly fixed to the inner surface of the holding hole.
- a baking process is complete
- the paste embedded in the filling step among the pastes that have been subjected to the main baking has already evaporated most of the organic substances at the time of the first temporary baking, and therefore the volume is hardly reduced at the time of the preliminary baking and the main baking after the paste supplementation.
- the new paste replenished after the initial calcination has a very small amount of paste compared to the total amount of paste in the holding holes, although the volume is reduced by the calcination and main calcination after the paste replenishment. It is. Therefore, the influence which the volume reduced by pre-baking and main baking of a new paste has on the volume of the whole paste is negligibly small.
- the surface of the paste after curing by the main baking does not greatly dent. That is, the surface of the base substrate wafer and the surface of the paste cured by the main baking are almost flush with each other.
- a polishing process is performed in which both surfaces of the base substrate wafer are polished to a predetermined thickness.
- both sides of the paste cured by the main baking can be simultaneously polished, so that the periphery of the slightly recessed portion can be removed. That is, the surface of the cured paste can be made flatter. As a result, the surface of the base substrate wafer and the surface of the cured paste become more flush with each other.
- the through electrode forming process in the case where the polishing process is performed after the main baking is completed.
- the electrical conductivity as a penetration electrode is ensured because the some metal fine particle contained in a paste mutually contacts. Further, in the above-described through electrode forming step, the amount of polishing in the polishing step is very small, so that the time required for the polishing step can be shortened.
- the through electrode forming step in the case where the polishing step is performed before the main firing will be described subsequently.
- the same process as described above is performed until the paste embedded in the filling process is temporarily fired. After the paste embedded in the filling step is temporarily fired, as described above, a dent is generated on the surface of the paste. Therefore, immediately after the preliminary baking, a polishing step is performed in which both surfaces of the base substrate wafer are polished to a predetermined thickness. Thereby, since the periphery of the recessed part can be shaved, the surface of the base substrate wafer and the surface of the paste after pre-baking are almost flush with each other.
- the amount of decrease in the volume of the paste in this pre-baking is smaller than that in the case where the main baking is performed once without pre-baking. Accordingly, the dent on the paste surface caused by the pre-baking is smaller than the dent generated when the same amount of paste is fired at once without pre-baking. Therefore, the amount of polishing can be suppressed by performing the polishing step immediately after the paste is temporarily fired, and the time required for the polishing step can be shortened.
- the paste is completely cured by performing main firing.
- the paste is firmly fixed to the inner surface of the holding hole, and the paste functions as a through electrode.
- the volume reduction in the main baking is negligible. Accordingly, the surface of the base substrate wafer and the surface of the hardened paste are maintained substantially flush with each other as before the main baking. By performing this main baking, the through electrode forming step is completed.
- the above is the through electrode forming step according to the present invention. As described above, the surface of the base substrate wafer and the surface of the hardened paste are almost flush with each other no matter what timing the polishing step is performed. It becomes.
- a lead electrode forming step is performed in which a conductive material is patterned on the upper surface of the base substrate wafer to form a plurality of lead electrodes electrically connected to the through electrodes.
- the routing electrode is formed so as to be accommodated in the recess formed in the lid substrate wafer.
- the through electrode is substantially flush with the upper surface of the base substrate wafer as described above. For this reason, the routing electrode patterned on the upper surface of the base substrate wafer is in close contact with the through electrode without generating a gap or the like therebetween. Thereby, the electrical continuity between the routing electrode and the through electrode can be ensured.
- a mounting process is performed in which a plurality of piezoelectric vibrating reeds are bonded to the upper surface of the base substrate wafer via the routing electrodes. Thereby, each joined piezoelectric vibrating piece will be in the state which conduct
- an overlaying process for overlaying the base substrate wafer and the lid substrate wafer is performed. As a result, the plurality of bonded piezoelectric vibrating reeds are housed in a cavity surrounded by the recess and both wafers.
- a bonding process is performed for bonding both the stacked wafers. Thereby, since both wafers are firmly adhered, the piezoelectric vibrating piece can be sealed in the cavity.
- an external electrode forming step is performed in which a conductive material is patterned on the lower surface of the base substrate wafer to form a plurality of external electrodes electrically connected to the through electrodes.
- the through electrode is substantially flush with the lower surface of the base substrate wafer as in the case of forming the lead-out electrode, so that the patterned external electrode generates a gap or the like between them. Without contact with the through electrode. Thereby, the electrical connection between the external electrode and the through electrode can be ensured.
- the piezoelectric vibrating piece sealed in the cavity can be operated using the external electrode.
- a cutting process is performed in which the bonded base substrate wafer and lid substrate wafer are cut into small pieces into a plurality of piezoelectric vibrators.
- the through electrode can be formed in a substantially flush state with respect to the base substrate, the through electrode can be reliably brought into close contact with the routing electrode and the external electrode. As a result, stable continuity between the piezoelectric vibrating piece and the external electrode can be ensured, the reliability of the operation performance can be improved, and high quality can be achieved. In addition, since the airtightness in the cavity can be reliably maintained, the quality can be improved also in this respect. In addition, since the through electrode can be formed by a simple method using paste, the process can be simplified.
- the paste may be defoamed and then embedded in the holding hole.
- the paste is defoamed in advance, the paste containing as little bubbles as possible can be filled. Therefore, even if a baking process is performed, the volume reduction of a paste can be suppressed as much as possible. Accordingly, the amount of polishing in the subsequent polishing step can be reduced, the time required for this step can be reduced, and the piezoelectric vibrator can be manufactured more efficiently.
- the holding hole is formed in a bottomed hole shape from the upper surface side of the base substrate wafer; the polishing step forms the upper surface of the base substrate wafer by a predetermined thickness.
- the holding hole is formed in a bottomed hole shape from the upper surface side of the base substrate wafer.
- the polishing process includes an upper surface polishing process and a lower surface polishing process.
- the polishing amount can be set based on the thickness of the base substrate wafer and the depth of the holding hole without depending on the volume of the paste that decreases during firing. Therefore, in the lower surface polishing step, it is not necessary to perform polishing after confirming the state of the paste, and a predetermined amount may be polished. Therefore, insufficient polishing or excessive polishing can be prevented.
- a piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between a base substrate and a lid substrate bonded to each other is provided.
- a recess forming step for forming a plurality of through electrodes penetrating the wafer using a paste containing a plurality of metal fine particles on the base substrate wafer; and forming an upper surface of the base substrate wafer.
- a recess forming step is performed in which a plurality of cavity recesses are formed in a lid substrate wafer. These recesses are recesses that become cavities when the two wafers are overlapped later.
- a through electrode forming step for forming a plurality of through electrodes on the base substrate wafer is performed at the same time as or before or after this step. At this time, a plurality of through electrodes are formed so as to be accommodated in the recesses formed in the lid substrate wafer when the two wafers are overlapped later.
- the penetration electrode forming step will be described in detail.
- a hole forming step for forming a plurality of holes on the upper surface of the base substrate wafer is performed.
- a filling process is performed in which the paste containing the metal fine particles is filled in the plurality of holes without gaps to close the holes.
- a firing process is performed in which the filled paste is fired and cured at a predetermined temperature. As a result, the paste is firmly fixed to the inner surface of the hole.
- an upper surface polishing step is performed to polish the upper surface of the base substrate wafer by a predetermined thickness.
- the paste cured by baking can be simultaneously polished on the upper surface of the base substrate wafer, so that the periphery of the recessed portion can be scraped off. That is, the surface of the cured paste can be flattened. Therefore, on the upper surface of the base substrate wafer, the surface of the base substrate wafer and the surface of the cured paste are substantially flush.
- the lower surface polishing step of polishing the lower surface of the base substrate wafer after firing is performed until the paste penetrated through the hole and at least exposed. Thereby, the paste hardened in the hole is exposed on the lower surface.
- the hole formed in the base substrate wafer becomes a through hole that subsequently penetrates the base substrate wafer, and the hardened paste becomes the through electrode.
- the surface of the base substrate wafer and the surface of the hardened paste are substantially flush with each other on the lower surface of the base substrate wafer.
- the through electrode forming step is completed.
- the electrical conductivity of the through electrode is ensured because the plurality of metal fine particles contained in the paste are in contact with each other.
- a lead electrode forming step is performed in which a conductive material is patterned on the upper surface of the base substrate wafer to form a plurality of lead electrodes electrically connected to the through electrodes.
- the routing electrode is formed so as to be accommodated in the recess formed in the lid substrate wafer.
- the through electrode has no depression on the surface as described above, and is substantially flush with the upper surface of the base substrate wafer. For this reason, the routing electrode patterned on the upper surface of the base substrate wafer is in close contact with the through electrode without generating a gap or the like therebetween. Thereby, the electrical continuity between the routing electrode and the through electrode can be ensured.
- a mounting process is performed in which the plurality of piezoelectric vibrating reeds are joined to the upper surface of the base substrate wafer via the routing electrodes. Thereby, each joined piezoelectric vibrating piece will be in the state which conduct
- an overlaying process for overlaying the base substrate wafer and the lid substrate wafer is performed. As a result, the plurality of bonded piezoelectric vibrating reeds are housed in a cavity surrounded by the recess and both wafers.
- a bonding process is performed for bonding both the stacked wafers.
- the piezoelectric vibrating piece can be sealed in the cavity.
- the through-hole formed in the base substrate wafer is closed by the through-electrode, the airtightness in the cavity is not impaired through the through-hole.
- the paste constituting the through electrode is firmly adhered to the inner surface of the through hole, airtightness in the cavity can be reliably maintained.
- an external electrode forming step is performed in which a conductive material is patterned on the lower surface of the base substrate wafer to form a plurality of external electrodes electrically connected to the through electrodes.
- the through electrode is substantially flush with the lower surface of the base substrate wafer as in the case of forming the lead-out electrode, so that the patterned external electrode generates a gap or the like between them. Without contact with the through electrode. Thereby, the electrical connection between the external electrode and the through electrode can be ensured.
- the piezoelectric vibrating piece sealed in the cavity can be operated using the external electrode.
- a cutting process is performed in which the bonded base substrate wafer and lid substrate wafer are cut into small pieces into a plurality of piezoelectric vibrators.
- the through electrode can be formed in a state where there is no depression on the surface and is substantially flush with the base substrate, the through electrode can be reliably brought into close contact with the routing electrode and the external electrode.
- the reliability of the operation performance can be improved, and high quality can be achieved.
- the airtightness in the cavity can be reliably maintained, the quality can be improved also in this respect.
- the polishing amount can be set based on the thickness of the base substrate wafer and the depth of the hole without depending on the volume of the paste that decreases during firing. Therefore, in the lower surface polishing step, it is not necessary to perform polishing after confirming the state of the paste, and a predetermined amount may be polished. Therefore, insufficient polishing or excessive polishing can be prevented.
- the through electrode can be formed by a simple method using paste, the process can be simplified. Furthermore, since the hole portion which is a bottomed hole is used when embedding the paste, the embedding operation of the paste is easy, and the process can be simplified. In addition, there is no fear of using the paste in vain.
- the paste may be defoamed and embedded in the hole.
- the paste is defoamed in advance, the paste containing as little bubbles as possible can be filled. Therefore, even if a baking process is performed, the volume reduction of a paste can be suppressed as much as possible. Accordingly, the amount of polishing in the subsequent polishing step can be reduced, the time required for this step can be reduced, and the piezoelectric vibrator can be manufactured more efficiently.
- a piezoelectric vibrator in which a piezoelectric vibrating piece is sealed in a cavity formed between a base substrate and a lid substrate bonded to each other is provided.
- a recess forming step for forming a plurality of through electrodes penetrating the wafer using a paste containing a plurality of metal fine particles on the base substrate wafer; and forming an upper surface of the base substrate wafer.
- a recess forming step is performed in which a plurality of cavity recesses are formed in a lid substrate wafer. These recesses are recesses that become cavities when the two wafers are overlapped later.
- a through electrode forming step for forming a plurality of through electrodes on the base substrate wafer is performed at the same time as or before or after this step. At this time, a plurality of through electrodes are formed so as to be accommodated in the recesses formed in the lid substrate wafer when the two wafers are overlapped later.
- a through hole forming process for forming a plurality of through holes penetrating the wafer in the base substrate wafer is performed.
- a filling step of filling the plurality of through holes with a paste containing metal fine particles without gaps to close the through holes is performed.
- a firing process is performed in which the filled paste is fired and cured at a predetermined temperature.
- the paste is firmly fixed to the inner surface of the through hole.
- a polishing process is performed in which both surfaces of the base substrate wafer are polished by a predetermined thickness.
- both sides of the paste cured by firing can be polished simultaneously, so that the periphery of the recessed portion can be scraped off. That is, the surface of the cured paste can be flattened. Therefore, the surface of the base substrate wafer and the surface of the through electrode are substantially flush.
- the through electrode forming process is completed.
- the electrical conductivity of the through electrode is ensured because the plurality of metal fine particles contained in the paste are in contact with each other.
- a lead electrode forming step is performed in which a conductive material is patterned on the upper surface of the base substrate wafer to form a plurality of lead electrodes electrically connected to the respective through electrodes.
- the routing electrode is formed so as to be accommodated in the recess formed in the lid substrate wafer.
- the through electrode has no depression on the surface as described above, and is substantially flush with the upper surface of the base substrate wafer. For this reason, the routing electrode patterned on the upper surface of the base substrate wafer is in close contact with the through electrode without generating a gap or the like therebetween. Thereby, the electrical continuity between the routing electrode and the through electrode can be ensured.
- a mounting process is performed in which a plurality of piezoelectric vibrating reeds are joined to the upper surface of the base substrate wafer through the routing electrodes. Thereby, each joined piezoelectric vibrating piece will be in the state which conduct
- an overlaying process for overlaying the base substrate wafer and the lid substrate wafer is performed. As a result, the plurality of bonded piezoelectric vibrating reeds are housed in a cavity surrounded by the recess and both wafers.
- a bonding process is performed for bonding both the stacked wafers.
- the piezoelectric vibrating piece can be sealed in the cavity.
- the through-hole formed in the base substrate wafer is closed by the through-electrode, the airtightness in the cavity is not impaired through the through-hole.
- the paste constituting the through electrode is firmly adhered to the inner surface of the through hole, airtightness in the cavity can be reliably maintained.
- an external electrode forming step is performed in which a conductive material is patterned on the lower surface of the base substrate wafer to form a plurality of external electrodes electrically connected to the respective through electrodes.
- the through electrode is substantially flush with the lower surface of the base substrate wafer as in the case of forming the lead-out electrode, so that the patterned external electrode generates a gap or the like between them. Without contact with the through electrode. Thereby, the electrical connection between the external electrode and the through electrode can be ensured.
- the piezoelectric vibrating piece sealed in the cavity can be operated using the external electrode.
- a cutting process is performed in which the bonded base substrate wafer and lid substrate wafer are cut into small pieces into a plurality of piezoelectric vibrators.
- the through electrode can be formed in a state where there is no depression on the surface and is substantially flush with the base substrate, the through electrode can be reliably brought into close contact with the routing electrode and the external electrode.
- the through electrode can be reliably brought into close contact with the routing electrode and the external electrode.
- the reliability of the operation performance can be improved, and high quality can be achieved.
- the airtightness in the cavity can be reliably maintained, the quality can be improved also in this respect.
- the through electrode can be formed by a simple method using paste, the process can be simplified.
- the paste may be defoamed and then embedded in the through hole.
- the paste is defoamed in advance, the paste containing as little bubbles as possible can be filled. Therefore, even if a baking process is performed, the volume reduction of a paste can be suppressed as much as possible. Accordingly, the amount of polishing in the subsequent polishing step can be reduced, the time required for this step can be reduced, and the piezoelectric vibrator can be manufactured more efficiently.
- the two wafers may be anodically bonded via the bonding film during the bonding step.
- both the wafers can be bonded more firmly to improve the airtightness in the cavity. Therefore, the piezoelectric vibrating piece can be vibrated with higher accuracy, and further quality improvement can be achieved.
- the piezoelectric vibrating piece may be bump-bonded using a conductive bump.
- the piezoelectric vibrating piece since the piezoelectric vibrating piece is bump-bonded, the piezoelectric vibrating piece can be lifted from the upper surface of the base substrate by the thickness of the bump. Therefore, the minimum vibration gap necessary for the vibration of the piezoelectric vibrating piece can be naturally secured. Therefore, the reliability of the operation performance of the piezoelectric vibrator can be further improved.
- a paste containing non-spherical metal fine particles may be embedded.
- the metal fine particles contained in the paste are not spherical but are non-spherical, for example, elongated fibers or cross-sectional stars, so that when they contact each other, they are not in point contact but in line contact. Easy to be. Therefore, the electrical continuity of the through electrode can be further increased.
- the thermal expansion of the paste can be brought close to the thermal expansion of the base substrate wafer during firing. Therefore, a gap or the like due to the difference in thermal expansion is unlikely to occur between the two, and the two can be brought into closer contact. As a result, it is possible to form a through electrode with higher airtightness and improve long-term airtight reliability.
- the piezoelectric vibrator according to the present invention includes a base substrate whose both surfaces are polished; a lid formed with a cavity concave portion and bonded to the base substrate with the concave portion facing the base substrate.
- the piezoelectric vibrator according to the present invention the high-quality two-layer surface mount type that can reliably maintain the airtightness in the cavity and secures stable electrical connection between the piezoelectric vibrating piece and the external electrode. It can be set as a piezoelectric vibrator.
- the base substrate and the lid substrate may be anodically bonded via a bonding film formed between the substrates so as to surround the periphery of the recess.
- the piezoelectric vibrating piece may be bump-bonded by a conductive bump.
- the metal fine particles may be non-spherical.
- Particles having substantially the same thermal expansion coefficient as the base substrate may be mixed in the paste.
- the piezoelectric vibrator described in any one of (12) to (16) is electrically connected to an integrated circuit as an oscillator.
- the piezoelectric vibrator described in any one of (12) to (16) is electrically connected to the time measuring unit.
- the piezoelectric vibrator described in any one of (12) to (16) is electrically connected to the filter unit.
- the operation reliability is similarly increased. High quality.
- a high-quality two-layer surface mount type that can reliably maintain the airtightness in the cavity and secures a stable electrical connection between the piezoelectric vibrating piece and the external electrode. It can be set as a piezoelectric vibrator.
- the above-described piezoelectric vibrator can be efficiently manufactured at a time, and the cost can be reduced.
- the oscillator, the electronic device, and the radio timepiece according to the present invention since the above-described piezoelectric vibrator is provided, the reliability of the operation can be similarly improved and the quality can be improved.
- FIG. 1 is an external perspective view showing a first embodiment of a piezoelectric vibrator according to the present invention.
- FIG. 2 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 1 and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 3 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG.
- FIG. 4 is an exploded perspective view of the piezoelectric vibrator shown in FIG.
- FIG. 5 is a top view of the piezoelectric vibrating piece constituting the piezoelectric vibrator shown in FIG. 6 is a bottom view of the piezoelectric vibrating piece shown in FIG. 7 is a cross-sectional view taken along the line BB shown in FIG. FIG.
- FIG. 8 is an enlarged view of the through electrode shown in FIG. 3 and shows a paste containing a plurality of metal fine particles.
- FIG. 9 is a flowchart showing a flow of manufacturing the piezoelectric vibrator shown in FIG.
- FIG. 10 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 9, and shows a state in which a plurality of recesses are formed on the lid substrate wafer that is the base of the lid substrate. It is.
- FIG. 11 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG. 9, and illustrates a state in which a plurality of holding holes are formed in a base substrate wafer that is a base substrate.
- FIG. 12 is a view of the state shown in FIG. 11 as seen from the cross section of the base substrate wafer.
- FIG. 13 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG. 9, and illustrates a state in which a paste is filled in the holding hole after the state illustrated in FIG. 12. It is.
- FIG. 14 is a diagram illustrating a process for manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG. 9, and is a diagram illustrating a state in which the paste is temporarily fired after the state illustrated in FIG. 13.
- FIG. 15 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG.
- FIG. 16 is a diagram illustrating a process for manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG. 9, and is a diagram illustrating a state in which the paste is finally baked after the state illustrated in FIG. 15.
- FIG. 17 is a diagram showing a process for manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 9, and shows a state where both surfaces of the base substrate wafer are polished after the state shown in FIG. 16.
- FIG. FIG. 18 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 9. After the state shown in FIG.
- FIG. 17 is a diagram illustrating a process for manufacturing a piezoelectric vibrator according to the flowchart illustrated in FIG. 9. After the state illustrated in FIG. 18, the bonding film and the routing electrode are provided on the upper surface of the base substrate wafer. It is a figure which shows the state which patterned.
- FIG. 20 is an overall view of the base substrate wafer in the state shown in FIG.
- FIG. 21 is a diagram illustrating a process of manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG.
- FIG. 22 is a flowchart showing a flow in manufacturing the piezoelectric vibrator shown in FIG. 1 in the second embodiment according to the present invention.
- FIG. 23 is a diagram showing a process for manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 22, and shows a state where both surfaces of the base substrate wafer are polished after the state shown in FIG. 14.
- FIG. 24 is a diagram illustrating a process when the piezoelectric vibrator is manufactured along the flowchart illustrated in FIG.
- FIG. 22 is a diagram illustrating a state after the state illustrated in FIG. 23.
- FIG. 25 is a diagram illustrating a process for manufacturing the piezoelectric vibrator according to the flowchart illustrated in FIG. 22, and is a diagram illustrating a state in which the paste is finally baked after the state illustrated in FIG. 24.
- FIG. 26 is an external perspective view showing a third embodiment of the piezoelectric vibrator according to the present invention.
- FIG. 27 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 26, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 28 is a sectional view of the piezoelectric vibrator taken along line AA shown in FIG. FIG.
- FIG. 29 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 30 is a top view of the piezoelectric vibrating piece constituting the piezoelectric vibrator shown in FIG. 31 is a bottom view of the piezoelectric vibrating piece shown in FIG. 32 is a cross-sectional view taken along the line BB in FIG.
- FIG. 33 is an enlarged view of the through electrode shown in FIG. 28, and shows a paste containing a plurality of metal fine particles.
- FIG. 34 is a flowchart showing a flow when the piezoelectric vibrator shown in FIG. 26 is manufactured.
- FIG. 35 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG.
- FIG. 36 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34, and shows a state in which a plurality of holes are formed in the base substrate wafer that is the base substrate.
- FIG. 37 is a view of the state shown in FIG. 36 as viewed from the cross section of the base substrate wafer.
- FIG. 38 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34, and shows a state in which the hole is filled with paste after the state shown in FIG. is there.
- FIG. 36 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34, and shows a state in which the hole is filled with paste after the state shown in FIG. is there.
- FIG. 39 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34, and is a diagram showing a state in which the paste is cured by baking after the state shown in FIG. .
- FIG. 40 is a diagram showing a process for manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34, and shows a state where both surfaces of the base substrate wafer are polished after the state shown in FIG.
- FIG. 41 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34, and after the state shown in FIG. 40, the dent disappears and is flush with the surface of the base substrate wafer. It is a figure which shows the through electrode which became.
- FIG. 40 is a diagram showing a process for manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34, and shows a state where both surfaces of the base substrate wafer are polished after the state shown in FIG.
- FIG. 41 is
- FIG. 42 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 34. After the state shown in FIG. 41, the bonding film and the routing electrode are formed on the upper surface of the base substrate wafer. It is a figure which shows the state which patterned.
- FIG. 43 is an overall view of the base substrate wafer in the state shown in FIG.
- FIG. 44 is a diagram showing one process when the piezoelectric vibrator is manufactured according to the flowchart shown in FIG. 34, and the base substrate wafer, the lid substrate wafer, It is a disassembled perspective view of the wafer body by which anodic bonding was carried out.
- FIG. 45 is an external perspective view showing a fourth embodiment of a piezoelectric vibrator according to the present invention.
- FIG. 46 is an internal configuration diagram of the piezoelectric vibrator shown in FIG. 45, and is a view of the piezoelectric vibrating piece viewed from above with the lid substrate removed.
- FIG. 47 is a cross-sectional view of the piezoelectric vibrator taken along line AA shown in FIG.
- FIG. 48 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 49 is a top view of a piezoelectric vibrating piece constituting the piezoelectric vibrator shown in FIG.
- FIG. 50 is a bottom view of the piezoelectric vibrating piece shown in FIG. 51 is a cross-sectional view taken along the line BB in FIG.
- FIG. 52 is an enlarged view of the through electrode shown in FIG.
- FIG. 53 is a flowchart showing a flow when the piezoelectric vibrator shown in FIG. 45 is manufactured.
- FIG. 54 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53, and shows a state in which a plurality of recesses are formed on the lid substrate wafer that is the base of the lid substrate. It is.
- FIG. 55 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53, and shows a state in which a pair of through holes are formed in the base substrate wafer that is the base substrate.
- FIG. 56 is a view of the state shown in FIG.
- FIG. 57 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53, and shows a state in which the through hole is filled with paste after the state shown in FIG. It is.
- FIG. 58 is a diagram showing one step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53, and after the state shown in FIG. 57, the paste is cured by baking to form a through electrode.
- FIG. FIG. 59 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53, and shows a state where both surfaces of the base substrate wafer are polished after the state shown in FIG. FIG. FIG.
- FIG. 60 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53, and after the state shown in FIG. 59, the dent disappears and is flush with the surface of the base substrate wafer. It is a figure which shows the through electrode which became.
- FIG. 61 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53. After the state shown in FIG. 60, the bonding film and the routing electrode are formed on the upper surface of the base substrate wafer. It is a figure which shows the state which patterned. 62 is an overall view of the base substrate wafer in the state shown in FIG. FIG.
- FIG. 63 is a diagram showing a step in manufacturing the piezoelectric vibrator according to the flowchart shown in FIG. 53, and shows the base substrate wafer, the lid substrate wafer, and the piezoelectric substrate in a state where the piezoelectric vibrating piece is housed in the cavity. It is a disassembled perspective view of the wafer body by which anodic bonding was carried out.
- FIG. 64 is a block diagram showing an embodiment of an oscillator according to the present invention.
- FIG. 65 is a block diagram showing an embodiment of an electronic apparatus according to the invention.
- FIG. 66 is a block diagram showing an embodiment of a radio timepiece according to the present invention.
- FIG. 67 is an enlarged view showing a modification of the paste according to the present invention.
- FIG. 68A is a view showing a modification of the metal fine particles according to the present invention and is a view showing metal fine particles formed in a strip shape.
- FIG. 68B is a diagram showing a modification of the metal fine particles according to the present invention and is a diagram showing the metal fine particles formed in a corrugated shape.
- FIG. 68C is a diagram showing a modification of the metal fine particles according to the present invention and is a diagram showing the metal fine particles formed in a cross-sectional star shape.
- FIG. 68D is a view showing a modification of the metal fine particles according to the present invention and showing fine particles formed in a cross-shaped cross section.
- FIG. 69 is a cross-sectional view showing a modification of the piezoelectric vibrator according to the present invention.
- 70 is an internal structural view of a conventional piezoelectric vibrator, and is a view of the piezoelectric vibrating piece as viewed from above with the lid substrate removed. 71 is a cross-sectional view of the piezoelectric vibrator shown in FIG.
- the piezoelectric vibrator 1 of the present embodiment is formed in a box shape in which a base substrate 2 and a lid substrate 3 are laminated in two layers as shown in FIGS. This is a surface-mounted piezoelectric vibrator 1 in which a vibrating piece 4 is housed.
- the excitation electrode 15, the extraction electrodes 19 and 20, the mount electrodes 16 and 17, and the weight metal film 21, which will be described later, are omitted for easy understanding of the drawing.
- the piezoelectric vibrating piece 4 is a tuning fork type vibrating piece formed of a piezoelectric material such as crystal, lithium tantalate, or lithium niobate, and when a predetermined voltage is applied. It vibrates.
- the piezoelectric vibrating reed 4 includes a pair of vibrating arm portions 10 and 11 arranged in parallel, a base portion 12 that integrally fixes the base end sides of the pair of vibrating arm portions 10 and 11, and a pair of vibrating arm portions.
- the piezoelectric vibrating reed 4 includes groove portions 18 formed along the longitudinal direction of the vibrating arm portions 10 and 11 on both main surfaces of the pair of vibrating arm portions 10 and 11.
- the groove portion 18 is formed from the proximal end side of the vibrating arm portions 10 and 11 to the vicinity of the middle.
- the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 is an electrode that vibrates the pair of vibrating arm portions 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. Patterned on the outer surfaces of the vibrating arm portions 10 and 11 while being electrically separated from each other. Specifically, as shown in FIG. 7, the first excitation electrode 13 is mainly formed on the groove portion 18 of one vibration arm portion 10 and on both side surfaces of the other vibration arm portion 11. The excitation electrode 14 is mainly formed on both side surfaces of one vibration arm portion 10 and on the groove portion 18 of the other vibration arm portion 11.
- the first excitation electrode 13 and the second excitation electrode 14 are electrically connected to the mount electrodes 16 and 17 via the extraction electrodes 19 and 20 on both main surfaces of the base portion 12, respectively. Connected. A voltage is applied to the piezoelectric vibrating reed 4 via the mount electrodes 16 and 17.
- the excitation electrode 15, the mount electrodes 16 and 17, and the extraction electrodes 19 and 20 described above are made of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al), or titanium (Ti). It is formed.
- a weight metal film 21 for adjusting (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 10 and 11.
- the weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is roughly adjusted and a fine adjustment film 21b used when the frequency is finely adjusted.
- the piezoelectric vibrating reed 4 configured in this way is bump-bonded to the upper surface of the base substrate 2 using bumps B such as gold as shown in FIGS. More specifically, a pair of mount electrodes 16 and 17 are bump-bonded to two bumps B formed on the routing electrodes 36 and 37 patterned on the upper surface of the base substrate 2 in a state where they are in contact with each other. . As a result, the piezoelectric vibrating reed 4 is supported in a state of floating from the upper surface of the base substrate 2 and the mount electrodes 16 and 17 and the routing electrodes 36 and 37 are electrically connected to each other.
- the lid substrate 3 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape as shown in FIGS.
- a rectangular recess 3 a in which the piezoelectric vibrating reed 4 is accommodated is formed on the bonding surface side to which the base substrate 2 is bonded.
- the concave portion 3 a is a cavity concave portion 3 a that becomes a cavity C that accommodates the piezoelectric vibrating reed 4 when the two substrates 2 and 3 are overlapped.
- the lid substrate 3 is anodically bonded to the base substrate 2 with the recess 3a facing the base substrate 2 side.
- the base substrate 2 is a transparent insulating substrate made of a glass material, for example, soda lime glass, like the lid substrate 3, and has a size that can be superimposed on the lid substrate 3 as shown in FIGS. It is formed in a plate shape.
- a pair of through holes 30 and 31 penetrating the base substrate 2 are formed.
- the pair of through holes 30 and 31 are formed so as to be accommodated in the cavity C. More specifically, in the through holes 30 and 31 of the present embodiment, one through hole 30 is located on the base 12 side of the mounted piezoelectric vibrating reed 4, and the other through hole is on the tip side of the vibrating arm portions 10 and 11. It is formed so that the hole 31 is located.
- a through hole having a tapered cross section whose diameter gradually decreases toward the lower surface of the base substrate 2 will be described as an example.
- the present invention is not limited to this case, and the base substrate 2 passes straight through. It can be a through hole. In any case, it only has to penetrate the base substrate 2.
- the pair of through holes 30 and 31 are formed with a pair of through electrodes 32 and 33 formed so as to fill the through holes 30 and 31.
- these through electrodes 32 and 33 are formed by curing a paste P containing a plurality of metal fine particles P1, and completely close the through holes 30 and 31 so as to prevent airtightness in the cavity C.
- the external electrodes 38 and 39, which will be described later, and the routing electrodes 36 and 37 are electrically connected.
- the through electrodes 32 and 33 ensure electrical conductivity because the plurality of metal fine particles P1 contained in the paste P are in contact with each other. Further, the case where the metal fine particles P1 of the present embodiment are formed in an elongated fiber shape (non-spherical shape) with copper or the like will be described as an example.
- a conductive film for example, aluminum is used to form a bonding film 35 for anodic bonding
- a pair of routing electrodes 36 and 37 are patterned.
- the bonding film 35 is formed along the periphery of the base substrate 2 so as to surround the periphery of the recess 3 a formed in the lid substrate 3.
- the pair of lead electrodes 36 and 37 electrically connect one of the pair of through electrodes 32 and 33 to the one mount electrode 16 of the piezoelectric vibrating reed 4 and the other through electrode 33.
- the piezoelectric vibrating piece 4 is patterned so as to be electrically connected to the other mount electrode 17. More specifically, the one lead-out electrode 36 is formed directly above the one through electrode 32 so as to be positioned directly below the base 12 of the piezoelectric vibrating piece 4.
- the other routing electrode 37 is routed from the position adjacent to the one routing electrode 36 to the distal end side of the vibrating arm portions 10 and 11 along the vibrating arm portions 10 and 11, and then the other through electrode 33. It is formed to be located directly above.
- Bumps B are formed on the pair of lead-out electrodes 36 and 37, and the piezoelectric vibrating reed 4 is mounted using the bumps B.
- one mount electrode 16 of the piezoelectric vibrating reed 4 is electrically connected to one through electrode 32 via one routing electrode 36, and the other mount electrode 17 passes through the other routing electrode 37 to the other penetration electrode.
- the electrode 33 is electrically connected.
- external electrodes 38 and 39 are formed on the lower surface of the base substrate 2 so as to be electrically connected to the pair of through electrodes 32 and 33, respectively. That is, one external electrode 38 is electrically connected to the first excitation electrode 13 of the piezoelectric vibrating reed 4 via one through electrode 32 and one routing electrode 36. The other external electrode 39 is electrically connected to the second excitation electrode 14 of the piezoelectric vibrating reed 4 via the other through electrode 33 and the other routing electrode 37.
- a predetermined drive voltage is applied to the external electrodes 38 and 39 formed on the base substrate 2.
- a current can flow through the excitation electrode 15 including the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4, and is predetermined in a direction in which the pair of vibrating arm portions 10 and 11 are approached and separated.
- Can be vibrated at a frequency of The vibration of the pair of vibrating arm portions 10 and 11 can be used as a time source, a control signal timing source, a reference signal source, and the like.
- the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 4 shown in FIGS. 5 to 7 (S10). Specifically, a quartz Lambert rough is first sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and roughly processed, and then the work-affected layer is removed by etching, and then mirror polishing such as polishing is performed to obtain a wafer having a predetermined thickness.
- the wafer is patterned with the outer shape of the piezoelectric vibrating reed 4 by photolithography, and a metal film is formed and patterned to obtain the excitation electrode 15 and the lead-out. Electrodes 19 and 20, mount electrodes 16 and 17, and weight metal film 21 are formed. Thereby, the some piezoelectric vibrating piece 4 is producible.
- the resonance frequency is coarsely adjusted. This is done by irradiating the coarse adjustment film 21a of the weight metal film 21 with laser light to evaporate a part thereof and changing the weight. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting. This will be described later.
- a first wafer manufacturing process is performed in which a lid substrate wafer 50 to be the lid substrate 3 later is manufactured up to a state immediately before anodic bonding (S20).
- a disk-shaped lid substrate wafer 50 is formed by removing the outermost work-affected layer by etching or the like ( S21).
- a recess forming step is performed in which a plurality of cavity recesses 3a are formed in the matrix direction by etching or the like on the bonding surface of the lid substrate wafer 50 (S22). At this point, the first wafer manufacturing process is completed.
- a second wafer manufacturing process is performed in which the base substrate wafer 40 to be the base substrate 2 is manufactured up to the state immediately before anodic bonding (S30).
- a disk-shaped base substrate wafer 40 is formed by removing the outermost work-affected layer by etching or the like (S31).
- a through electrode forming process is performed in which a plurality of pairs of through electrodes 32 and 33 are formed on the base substrate wafer 40 using a paste P containing a plurality of metal fine particles P1 (S30A).
- the through electrode forming step will be described in detail.
- a holding hole forming step (S32) is performed in which a plurality of holding holes 30a, 31a having a bottomed hole shape are formed on the upper surface side of the base substrate wafer 40.
- the dotted line M shown in FIG. 11 has shown the cutting line cut
- this process for example, sand blasting is performed from the upper surface side of the base substrate wafer 40.
- the bottomed hole-shaped holding holes 30a and 31a are formed which are tapered in cross-section with the diameter gradually decreasing toward the lower surface of the base substrate wafer 40. be able to.
- a plurality of pairs of holding holes 30a and 31a are formed so as to be accommodated in the recess 3a formed in the lid substrate wafer 50 when the wafers 40 and 50 are overlapped later. Moreover, one holding hole 30 a is positioned on the base 12 side of the piezoelectric vibrating reed 4, and the other holding hole 31 a is positioned on the distal end side of the vibrating arm portions 10 and 11.
- a holding hole having a tapered cross section whose diameter gradually decreases toward the lower surface of the base substrate wafer 40 will be described as an example.
- the present invention is not limited to this, and the diameter is uniform.
- a holding hole may be used. In any case, it may be a fixed holding hole having a bottom on the lower surface side of the base substrate wafer 40.
- a filling process is performed in which the paste is embedded in the plurality of holding holes 30a and 31a without gaps to close the holding holes 30a and 31a (S33).
- the holding holes 30a and 31a are formed in a bottomed hole shape, the paste P can be easily embedded, and the process can be simplified. In addition, there is no fear of using the paste P wastefully.
- a firing step is performed in which the filled paste P is temporarily fired and then fired and cured. Specifically, first, the embedded paste P is temporarily fired (S34).
- the heating condition in the pre-baking is preferably about 80 minutes at 80 ° C.
- the paste P hardened by the pre-baking because most of the organic matter in the paste P (not shown) is evaporated at the time of pre-baking, the volume is reduced as compared with the filling process as shown in FIG. Therefore, a dent is inevitably generated on the surface of the paste P. Therefore, before performing the main baking, a new paste P corresponding to the amount of paste reduced during the temporary baking is supplemented to the paste P after the temporary baking (S35). Thereby, since the new paste P is filled in the recessed part, the surface becomes flat as shown in FIG.
- the entire paste P is temporarily fired again (S36). After this temporary firing is completed, the paste P is entirely fired (S37).
- the heating temperature for the main baking is preferably about 400 ° C. to 500 ° C., for example. Accordingly, the temporarily fired paste P and the newly replenished paste P are completely cured and integrated, and are firmly fixed to the inner surfaces of the holding holes 30a and 31a. By performing the temporary baking and the main baking of the paste P, the baking process is completed.
- the paste P embedded in the filling process among the paste P which has been subjected to the main baking has already evaporated most of the organic substances at the time of the first preliminary baking, and therefore has a volume at the time of the temporary baking and the main baking after the paste P supplementation. Almost no decrease.
- the new paste P replenished after the initial calcination is reduced in volume by the calcination and main calcination after replenishing the paste P, but the amount of the paste P itself is the amount of the paste P in the holding holes 30a and 31a Very small compared to the total amount. Therefore, the influence which the volume which decreases by carrying out temporary baking and main baking of the new paste P has on the volume of the whole paste P is so small that it can be disregarded.
- the surface of the paste P after being hardened by the main baking does not greatly dent. That is, on the upper surface of the base substrate wafer 40, the surface of the base substrate wafer 40 and the surface of the hardened paste P are substantially flush as shown in FIG.
- a polishing process is performed in which both surfaces of the base substrate wafer 40 are polished to a predetermined thickness. More specifically, as shown in FIG. 17, an upper surface polishing step of polishing the upper surface of the base substrate wafer 40 by a predetermined thickness is performed (S38).
- the paste P hardened by the main baking can be simultaneously polished on the upper surface of the base substrate wafer 40. Therefore, the periphery of the slightly recessed portion of the paste P can be cut off. That is, as shown in FIG. 18, the surface of the cured paste P can be made flatter. As a result, the surface of the base substrate wafer 40 and the surface of the cured paste P are more flush with each other.
- a lower surface polishing step is performed to polish the lower surface of the base substrate wafer 40 until it reaches the bottom of the holding holes 30a and 31a (S39). .
- the paste P hardened in the holding holes 30a and 31a is exposed to the lower surface.
- the pair of holding holes 30a and 31a formed in the base substrate wafer 40 become the through holes 30 and 31 penetrating the base substrate wafer 40 and the cured paste P becomes a pair of through electrodes 32 and 33.
- the surface of the base substrate wafer 40 and the surface of the hardened paste P are substantially flush.
- the polishing step is completed.
- the through electrode forming process is completed by performing the polishing process.
- a conductive material is patterned on the upper surface of the base substrate wafer 40, and as shown in FIGS. 19 and 20, a bonding film forming step for forming the bonding film 35 is performed (S40), and each pair of penetrations is performed.
- the dotted line M shown in FIG.19 and FIG.20 has shown the cutting line cut
- the through electrodes 32 and 33 are substantially flush with the upper surface of the base substrate wafer 40 as described above.
- the routing electrodes 36 and 37 patterned on the upper surface of the base substrate wafer 40 are in close contact with the through electrodes 32 and 33 without generating a gap or the like therebetween. As a result, it is possible to ensure the electrical conductivity between the one routing electrode 36 and the one through electrode 32 and the electrical conductivity between the other routing electrode 37 and the other through electrode 33. At this point, the second wafer manufacturing process is completed.
- FIG. 9 it is set as the process sequence which performs the routing electrode formation process (S41) after the bonding film formation process (S40), but on the contrary, after the routing electrode formation process (S41), the bonding film formation is performed.
- the step (S40) may be performed, or both steps may be performed simultaneously. Regardless of the order of steps, the same effects can be obtained. Therefore, the process order may be changed as necessary.
- a mounting process is performed in which the produced plurality of piezoelectric vibrating reeds 4 are joined to the upper surface of the base substrate wafer 40 via the routing electrodes 36 and 37, respectively (S50).
- bumps B such as gold are formed on the pair of lead-out electrodes 36 and 37, respectively.
- the piezoelectric vibrating piece 4 is pressed against the bump B while heating the bump B to a predetermined temperature.
- the piezoelectric vibrating reed 4 is mechanically supported by the bumps B, and the mount electrodes 16 and 17 and the routing electrodes 36 and 37 are electrically connected.
- the pair of excitation electrodes 15 of the piezoelectric vibrating reed 4 are in a conductive state with respect to the pair of through electrodes 32 and 33, respectively.
- the piezoelectric vibrating reed 4 is bump-bonded, it is supported in a state where it floats from the upper surface of the base substrate wafer 40.
- an overlaying process for overlaying the lid substrate wafer 50 on the base substrate wafer 40 is performed (S60). Specifically, both wafers 40 and 50 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 4 is housed in a cavity C surrounded by the recess 3 a formed in the base substrate wafer 40 and the wafers 40 and 50.
- the superposed two wafers 40 and 50 are put in an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere to perform anodic bonding (S70). Specifically, a predetermined voltage is applied between the bonding film 35 and the lid substrate wafer 50. As a result, an electrochemical reaction occurs at the interface between the bonding film 35 and the lid substrate wafer 50, and the two are firmly bonded and anodically bonded. Accordingly, the piezoelectric vibrating reed 4 can be sealed in the cavity C, and the wafer body 60 shown in FIG. 21 in which the base substrate wafer 40 and the lid substrate wafer 50 are bonded can be obtained. In FIG.
- a state where the wafer body 60 is disassembled is shown, and the bonding film 35 is not shown from the base substrate wafer 40.
- a dotted line M shown in FIG. 21 illustrates a cutting line that is cut in a cutting process to be performed later.
- a conductive material is patterned on the lower surface of the base substrate wafer 40, and a pair of external electrodes 38 and 39 electrically connected to the pair of through electrodes 32 and 33, respectively.
- a plurality of external electrode forming steps are formed (S80).
- the piezoelectric vibrating reed 4 sealed in the cavity C can be operated using the external electrodes 38 and 39.
- the through electrodes 32 and 33 are substantially flush with the lower surface of the base substrate wafer 40 as in the case of forming the lead-out electrodes 36 and 37, and thus the patterning is performed.
- the external electrodes 38 and 39 are in close contact with the through electrodes 32 and 33 without generating a gap or the like therebetween. Thereby, the continuity between the external electrodes 38 and 39 and the through electrodes 32 and 33 can be ensured.
- a fine adjustment step of finely adjusting the frequency of each piezoelectric vibrator 1 sealed in the cavity C to be within a predetermined range is performed (S90). More specifically, a voltage is applied to the pair of external electrodes 38 and 39 formed on the lower surface of the base substrate wafer 40 to vibrate the piezoelectric vibrating reed 4. Then, laser light is irradiated from the outside through the lid substrate wafer 50 while measuring the frequency, and the fine adjustment film 21b of the weight metal film 21 is evaporated. Thereby, since the weight of the tip end side of the pair of vibrating arm portions 10 and 11 is changed, the frequency of the piezoelectric vibrating piece 4 can be finely adjusted so as to be within a predetermined range of the nominal frequency.
- a cutting process is performed in which the bonded wafer body 60 is cut along the cutting line M shown in FIG.
- the piezoelectric resonator element 4 is sealed in the cavity C formed between the base substrate 2 and the lid substrate 3 bonded to each other, and the two-layer structure surface-mount type piezoelectric vibrator shown in FIG. Multiple 1s can be manufactured at a time.
- the order of processes in which the fine adjustment process (S90) is performed may be used.
- fine adjustment step (S90) fine adjustment can be performed in the state of the wafer body 60, so that the plurality of piezoelectric vibrators 1 can be finely adjusted more efficiently. Therefore, it is preferable because throughput can be improved.
- an internal electrical characteristic inspection is performed (S110). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependency of the resonance frequency and resonance resistance value) and the like of the piezoelectric vibrating piece 4 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 1 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 1.
- the piezoelectric vibrator 1 of the present embodiment can form the through electrodes 32 and 33 in a substantially flush state with respect to the base substrate 2, the through electrodes 32 and 33 are routed to the routing electrodes 36 and 37 and the external electrode 38. , 39 can be securely adhered to. As a result, stable continuity between the piezoelectric vibrating piece 4 and the external electrodes 38 and 39 can be ensured, and the reliability of the operation performance can be improved to achieve high performance. In addition, since the airtightness in the cavity C can be reliably maintained, the quality can be improved also in this respect. In addition, since the through electrodes 32 and 33 can be formed by a simple method using the paste P, the process can be simplified.
- a plurality of the piezoelectric vibrators 1 can be manufactured at a time, so that the cost can be reduced.
- the polishing amount is set based on the thickness of the base substrate wafer 40 and the depth of the holding holes 30a and 31a without depending on the volume of the paste P that decreases during firing. can do. That is, the polishing may be performed until the bottoms of the holding holes 30a and 31a are reached. Therefore, it is not necessary to perform polishing after confirming the state of the paste P, and it is sufficient to polish a predetermined amount. Thereby, insufficient polishing or excessive polishing can be prevented.
- the dent of the surface of the paste P can be suppressed small by performing the main baking after replenishing the paste P after the temporary baking. Therefore, the polishing amount of the base substrate wafer 40 is very small in the polishing process, particularly in the upper surface polishing process. Thereby, the time required for the polishing process can be shortened, and the manufacturing process of the piezoelectric vibrator 1 can be made highly efficient.
- the surface of the base substrate wafer 40 that is substantially flush with the surface of the cured paste P is further polished. Thereby, the surface of the wafer 40 for base substrates and the surface of the hardened paste P can be made more flush.
- the second embodiment and the first embodiment differ in the work sequence of the through electrode forming process in the manufacturing method. That is, in the first embodiment, immediately after the paste P embedded in the filling process is temporarily fired, a new paste P is replenished and temporarily fired again, and then the polishing process is performed after the main firing. In the second embodiment, the polishing step is performed immediately after the paste P embedded in the filling step is temporarily fired, and then the main firing is performed.
- the through electrode forming step (S30B) of the present embodiment will be described in particular with reference to the flowchart showing the manufacturing method of the second embodiment of the present invention shown in FIG.
- the same process as in the first embodiment is performed until the paste P embedded in the filling process is temporarily fired. After the paste P embedded in the filling process is temporarily fired, a dent is generated on the surface of the paste P. Therefore, immediately after the temporary baking, a polishing process is performed in which both surfaces of the base substrate wafer 40 are polished to a predetermined thickness. That is, as shown in FIG. 23, an upper surface polishing step for polishing the upper surface of the base substrate wafer 40 by a predetermined thickness, and a lower surface polishing for polishing the lower surface of the base substrate wafer 40 until the bottom of the holding holes 30a and 31a is reached. Process. Thereby, as shown in FIG.
- the holding holes 30 a and 31 a become the through holes 30 and 31.
- the periphery of the recessed portion of the paste P can be scraped off, the surface of the base substrate wafer 40 and the surface of the paste P after calcination are substantially flush with each other.
- the amount of decrease in the volume of the paste P in this pre-baking is smaller than in the case where the main baking is performed once without pre-baking. Accordingly, the dent on the surface of the paste P caused by the pre-baking is smaller than the dent generated when the same amount of the paste P is main-baked at one time without being pre-baked. Therefore, the polishing amount can be suppressed by performing the polishing process immediately after the paste P is pre-baked, and in particular, the time required for the upper surface polishing is shortened. By performing these upper surface polishing step and lower surface polishing step, the polishing step is completed.
- the paste P is hardened completely by performing main baking.
- the paste P is firmly fixed to the inner surfaces of the through holes 30 and 31, and the paste P functions as the through electrodes 32 and 33.
- the volume reduction in the main baking is negligible. Accordingly, the surface of the base substrate wafer 40 and the surface of the hardened paste P are maintained substantially flush with each other as before the main baking. By performing this main baking, the through electrode forming step is completed.
- the upper surface polishing step is performed immediately after the paste P embedded in the filling step is temporarily fired, so that the temporary firing is not performed. Compared with the case where the polishing step is performed immediately after the main baking at once, the time required for the polishing step can be shortened.
- the piezoelectric vibrator 101 of this embodiment is formed in a box shape in which a base substrate 102 and a lid substrate 103 are laminated in two layers. This is a surface-mounted piezoelectric vibrator 101 in which a vibrating piece 104 is housed.
- the excitation electrode 115, the extraction electrodes 119 and 120, the mount electrodes 116 and 117, and the weight metal film 121, which will be described later, are omitted for easy understanding of the drawing.
- the piezoelectric vibrating piece 104 is a tuning fork type vibrating piece formed of a piezoelectric material such as crystal, lithium tantalate, or lithium niobate, and when a predetermined voltage is applied. It vibrates.
- the piezoelectric vibrating piece 104 includes a pair of vibrating arm portions 110 and 111 arranged in parallel, a base portion 112 that integrally fixes a base end side of the pair of vibrating arm portions 110 and 111, and a pair of vibrating arm portions 110.
- the piezoelectric vibrating piece 104 of the present embodiment includes groove portions 118 formed along the longitudinal direction of the vibrating arm portions 110 and 111 on both main surfaces of the pair of vibrating arm portions 110 and 111, respectively.
- the groove portion 118 is formed from the base end side of the vibrating arm portions 110 and 111 to a substantially middle portion.
- the excitation electrode 115 including the first excitation electrode 113 and the second excitation electrode 114 is an electrode that vibrates the pair of vibrating arm portions 110 and 111 at a predetermined resonance frequency in a direction approaching or separating from each other. It is formed by patterning on the outer surface of the vibrating arm portions 110 and 111 while being electrically separated from each other. Specifically, as shown in FIG. 32, the first excitation electrode 113 is mainly formed on the groove 118 of one vibrating arm 110 and on both side surfaces of the other vibrating arm 111, and the second The excitation electrode 114 is mainly formed on both side surfaces of one vibrating arm portion 110 and on the groove portion 118 of the other vibrating arm portion 111.
- the first excitation electrode 113 and the second excitation electrode 114 are electrically connected to the mount electrodes 116 and 117 via the extraction electrodes 119 and 120, respectively, on both main surfaces of the base 112. Connected.
- the piezoelectric vibrating piece 104 is applied with a voltage via the mount electrodes 116 and 117.
- the excitation electrode 115, the mount electrodes 116 and 117, and the extraction electrodes 119 and 120 described above are made of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al), or titanium (Ti). It is formed.
- a weight metal film 121 for adjusting (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 110 and 111.
- the weight metal film 121 is divided into a coarse adjustment film 121a used when the frequency is roughly adjusted and a fine adjustment film 121b used when the frequency is finely adjusted.
- the frequency of the pair of vibrating arm portions 110 and 111 can be kept within the range of the nominal frequency of the device.
- the piezoelectric vibrating piece 104 configured in this manner is bump-bonded to the upper surface of the base substrate 102 using bumps B such as gold as shown in FIGS. More specifically, a pair of mount electrodes 116 and 117 are bump-bonded on two bumps B formed on the routing electrodes 136 and 137 patterned on the upper surface of the base substrate 102. . As a result, the piezoelectric vibrating piece 104 is supported in a state where it floats from the upper surface of the base substrate 102, and the mount electrodes 116, 117 and the routing electrodes 136, 137 are electrically connected to each other.
- the lid substrate 103 is a transparent insulating substrate made of a glass material such as soda lime glass, and is formed in a plate shape as shown in FIGS.
- a rectangular recess 103a in which the piezoelectric vibrating piece 104 is accommodated is formed on the bonding surface side to which the base substrate 102 is bonded.
- the recess 103 a is a cavity recess that becomes a cavity C that accommodates the piezoelectric vibrating reed 104 when the two substrates 102 and 103 are overlaid.
- the lid substrate 103 is anodically bonded to the base substrate 102 with the recess 103a facing the base substrate 102 side.
- the base substrate 102 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, like the lid substrate 103, and has a size that can be superimposed on the lid substrate 103 as shown in FIGS. It is formed in a plate shape.
- the base substrate 102 is formed with a pair of through holes 130 and 131 that penetrate the base substrate 102. At this time, the pair of through holes 130 and 131 are formed so as to be accommodated in the cavity C. More specifically, in the through holes 130 and 131 of the present embodiment, one through hole 130 is located on the base 112 side of the mounted piezoelectric vibrating piece 104, and the other through hole 130 is located on the tip side of the vibrating arm portions 110 and 111. It is formed so that the hole 131 is located.
- a through hole having a tapered cross section whose diameter gradually decreases toward the lower surface of the base substrate 102 will be described as an example.
- the present invention is not limited to this case, and the base substrate 102 penetrates straight. It can be a through hole. In any case, it only needs to penetrate the base substrate 102.
- a pair of through electrodes 132 and 133 are formed in the pair of through holes 130 and 131 so as to fill the through holes 130 and 131. As shown in FIG. 33, these through electrodes 132, 133 are formed by curing a paste P containing a plurality of metal fine particles P1, and completely close the through holes 130, 131 to seal the airtightness in the cavity C. In addition, the external electrodes 138 and 139 described later and the routing electrodes 136 and 137 are connected to each other. In addition, the through electrodes 132 and 133 are ensured in electrical conductivity because the plurality of metal fine particles P1 included in the paste P are in contact with each other. Further, the case where the metal fine particles P1 of the present embodiment are formed in an elongated fiber shape (non-spherical shape) with copper or the like will be described as an example.
- a conductive film for example, aluminum is used to form a bonding film 135 for anodic bonding
- a pair of routing electrodes 136 and 137 are patterned.
- the bonding film 135 is formed along the periphery of the base substrate 102 so as to surround the periphery of the recess 103 a formed in the lid substrate 103.
- the pair of lead electrodes 136 and 137 electrically connect one of the through electrodes 132 and 133 to the one mount electrode 116 of the piezoelectric vibrating piece 104 and the other through electrode 133. Patterning is performed so as to electrically connect the other mount electrode 117 of the piezoelectric vibrating piece 104. More specifically, one lead-out electrode 136 is formed directly above one through electrode 132 so as to be located directly below the base 112 of the piezoelectric vibrating piece 104. The other routing electrode 137 is routed from the position adjacent to the one routing electrode 136 along the vibrating arm portions 110 and 111 toward the distal end side of the vibrating arm portions 110 and 111, and then the other through electrode 133. It is formed to be located directly above.
- Bumps B are formed on the pair of routing electrodes 136 and 137, respectively, and the piezoelectric vibrating piece 104 is mounted using the bumps B. Accordingly, one mount electrode 116 of the piezoelectric vibrating piece 104 is electrically connected to one through electrode 132 through one routing electrode 136, and the other mount electrode 117 is passed through the other through the other routing electrode 137.
- the electrode 133 is made conductive.
- external electrodes 138 and 139 are formed on the lower surface of the base substrate 102.
- the external electrodes 138 and 139 are electrically connected to the pair of through electrodes 132 and 133, respectively. That is, one external electrode 138 is electrically connected to the first excitation electrode 113 of the piezoelectric vibrating piece 104 through one through electrode 132 and one routing electrode 136.
- the other external electrode 139 is electrically connected to the second excitation electrode 114 of the piezoelectric vibrating piece 104 via the other through electrode 133 and the other routing electrode 137.
- a predetermined drive voltage is applied to the external electrodes 138 and 139 formed on the base substrate 102.
- a current can flow through the excitation electrode 115 including the first excitation electrode 113 and the second excitation electrode 114 of the piezoelectric vibrating piece 104, and the pair of vibration arm portions 110 and 111 is set in a direction in which the pair of vibration arm portions 110 and 111 approaches and separates.
- Can be vibrated at a frequency of The vibration of the pair of vibrating arm portions 110 and 111 can be used as a time source, a control signal timing source, a reference signal source, and the like.
- the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 104 shown in FIGS. 30 to 32 (S110). Specifically, a quartz Lambert rough is first sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and subjected to rough processing, and then the work-affected layer is removed by etching, and then mirror polishing such as polishing is performed to obtain a wafer having a predetermined thickness.
- the wafer is subjected to appropriate processing such as cleaning, and then the wafer is patterned with the outer shape of the piezoelectric vibrating piece 104 by photolithography, and a metal film is formed and patterned to obtain the excitation electrode 115 and the lead-out. Electrodes 119 and 120, mount electrodes 116 and 117, and a weight metal film 121 are formed. Thereby, a plurality of piezoelectric vibrating pieces 104 can be manufactured.
- the resonance frequency is coarsely adjusted. This is performed by irradiating the coarse adjustment film 121a of the weight metal film 121 with a laser beam to evaporate a part thereof and changing the weight. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting. This will be described later.
- a first wafer manufacturing process is performed in which a lid substrate wafer 150 to be the lid substrate 103 later is manufactured up to a state immediately before anodic bonding (S120).
- a disc-shaped lid substrate wafer 150 is formed by removing the outermost work-affected layer by etching or the like ( S121).
- a recess forming step is performed in which a plurality of cavity recesses 103a are formed in the matrix direction by etching or the like on the bonding surface of the lid substrate wafer 150 (S122). At this point, the first wafer manufacturing process is completed.
- a second wafer manufacturing process is performed in which the base substrate wafer 140 to be the base substrate 102 is manufactured up to the state immediately before anodic bonding (S130).
- a disc-shaped base substrate wafer 140 is formed by removing the outermost work-affected layer by etching or the like (S131).
- a through electrode forming process is performed in which a plurality of pairs of through electrodes 132 and 133 are formed on the base substrate wafer 140 using a paste P containing a plurality of metal fine particles P1 (S130A).
- the through electrode forming step will be described in detail.
- a hole forming step (S132) for forming a plurality of a pair of holes 130a and 131a on the upper surface of the base substrate wafer 140 is performed.
- a dotted line M shown in FIG. 36 illustrates a cutting line that is cut in a subsequent cutting step.
- sand blasting is performed from the upper surface side of the base substrate wafer 140.
- holes 130a and 131a having a tapered shape with a gradually decreasing diameter toward the lower surface of the base substrate wafer 140 and having a bottom on the lower surface side can be formed.
- a plurality of pairs of holes 130a and 131a are formed so as to be accommodated in the recess 103a formed in the lid substrate wafer 150.
- one hole 130 a is positioned on the base 112 side of the piezoelectric vibrating piece 104, and the other hole 131 a is positioned on the tip side of the vibrating arm portions 110 and 111.
- a hole with a tapered cross section whose diameter gradually decreases toward the lower surface of the base substrate wafer 140 will be described as an example.
- the present invention is not limited to this, and the diameter is uniform. It may be a hole. In any case, it may be a bottomed hole portion having a bottom on the lower surface side of the base substrate wafer 140.
- a filling step of filling the plurality of holes 130a and 131a with the paste P without gaps to close the holes 130a and 131a is performed (S133). 38 to 41, the illustration of the metal fine particles P1 is omitted.
- a firing step is performed in which the filled paste P is fired at a predetermined temperature and cured (S134). Accordingly, the paste P is firmly fixed to the inner surfaces of the holes 130a and 131a.
- the organic substance in the paste P which is not illustrated evaporates at the time of baking, the hardened paste P will reduce a volume compared with the time of a filling process, as shown in FIG. Therefore, a dent is inevitably generated on the surface of the paste P.
- an upper surface polishing step (S135) for polishing the upper surface of the base substrate wafer 140 by a predetermined thickness is performed.
- the paste P hardened by baking can be simultaneously polished on the upper surface of the base substrate wafer 140, so that the periphery of the recessed portion can be scraped off. That is, the surface of the cured paste P can be flattened. Therefore, as shown in FIG. 41, the surface of the base substrate wafer 140 and the surface of the hardened paste P can be substantially flush with each other on the upper surface of the base substrate wafer 140.
- the lower surface for polishing the lower surface of the base substrate wafer 140 until at least the paste P that has passed through the holes 130a and 131a and is cured is exposed.
- a polishing step is performed (S136). In the lower surface polishing step of this embodiment, the polishing is performed until the bottoms of the holes 130a and 131a are reached. Thereby, as shown in FIG. 41, the paste P hardened in the holes 130a and 131a is exposed to the lower surface.
- the pair of holes 130a and 131a formed in the base substrate wafer 140 become through holes 130 and 131 that penetrate the base substrate wafer 140 and hardened paste P becomes a pair of through electrodes 132 and 133.
- the surface of the base substrate wafer 140 and the surface of the cured paste P can be substantially flush with each other on the lower surface of the base substrate wafer 140.
- a conductive material is patterned on the upper surface of the base substrate wafer 140, and as shown in FIGS. 42 and 43, a bonding film forming step for forming the bonding film 135 is performed (S137), and each pair of penetrations is performed.
- a dotted line M shown in FIG. 42 and FIG. 43 illustrates a cutting line that is cut in a subsequent cutting step.
- the through electrodes 132 and 133 have no dents on the surface and are substantially flush with the upper surface of the base substrate wafer 140.
- the routing electrodes 136 and 137 patterned on the upper surface of the base substrate wafer 140 are in close contact with the through electrodes 132 and 133 without generating a gap or the like therebetween. Thereby, it is possible to ensure the electrical connection between one routing electrode 136 and one through electrode 132 and the electrical connection between the other routing electrode 137 and the other through electrode 133. At this point, the second wafer manufacturing process is completed.
- the process sequence is such that the routing electrode formation process (S138) is performed after the bonding film formation process (S137).
- the bonding film formation is performed after the routing electrode formation process (S138).
- the step (S137) may be performed, or both steps may be performed simultaneously. Regardless of the order of steps, the same effects can be obtained. Therefore, the process order may be changed as necessary.
- a mounting process is performed in which the produced plurality of piezoelectric vibrating reeds 104 are joined to the upper surface of the base substrate wafer 140 via the routing electrodes 136 and 137, respectively (S140).
- bumps B such as gold are formed on the pair of lead-out electrodes 136 and 137, respectively.
- the piezoelectric vibrating piece 104 is pressed against the bump B while heating the bump B to a predetermined temperature. Accordingly, the piezoelectric vibrating piece 104 is mechanically supported by the bump B, and the mount electrodes 116 and 117 and the routing electrodes 136 and 137 are electrically connected.
- the pair of excitation electrodes 115 of the piezoelectric vibrating piece 104 are in a state of being electrically connected to the pair of through electrodes 132 and 133, respectively.
- the piezoelectric vibrating piece 104 is bump-bonded, it is supported in a state where it floats from the upper surface of the base substrate wafer 140.
- an overlaying process for overlaying the lid substrate wafer 150 on the base substrate wafer 140 is performed (S150). Specifically, both wafers 140 and 150 are aligned at the correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating piece 104 is accommodated in the cavity C surrounded by the recess 103 a formed in the base substrate wafer 140 and the two wafers 140 and 150.
- the superposed two wafers 140 and 150 are put in an anodic bonding apparatus (not shown), and a bonding process is performed in which a predetermined voltage is applied in a predetermined temperature atmosphere to perform anodic bonding (S160). Specifically, a predetermined voltage is applied between the bonding film 135 and the lid substrate wafer 150. As a result, an electrochemical reaction occurs at the interface between the bonding film 135 and the lid substrate wafer 150, and the two are firmly bonded and anodically bonded. Thereby, the piezoelectric vibrating piece 104 can be sealed in the cavity C, and the wafer body 160 shown in FIG. 44 in which the base substrate wafer 140 and the lid substrate wafer 150 are bonded can be obtained. In FIG.
- the wafer body 160 is shown in an exploded state, and the bonding film 135 is not shown from the base substrate wafer 140. Also, a dotted line M shown in FIG. 44 illustrates a cutting line that is cut in a cutting process to be performed later.
- the through holes 130 and 131 formed in the base substrate wafer 140 are completely closed by the through electrodes 132 and 133, so that the airtightness in the cavity C is reduced. Will not be damaged through.
- the paste P constituting the through electrodes 132 and 133 is firmly adhered to the inner surfaces of the through holes 130 and 131, the airtightness in the cavity C can be reliably maintained.
- a conductive material is patterned on the lower surface of the base substrate wafer 140 to form a pair of external electrodes 138 and 139 electrically connected to the pair of through electrodes 132 and 133, respectively.
- a plurality of external electrode forming steps are performed (S170).
- the piezoelectric vibrating piece 104 sealed in the cavity C can be operated using the external electrodes 138 and 139.
- the through electrodes 132 and 133 are substantially flush with the lower surface of the base substrate wafer 140 as in the case of forming the lead-out electrodes 136 and 137.
- the external electrodes 138 and 139 are in close contact with the through electrodes 132 and 133 without generating a gap or the like therebetween. Thereby, the electrical continuity between the external electrodes 138 and 139 and the through electrodes 132 and 133 can be ensured.
- a fine adjustment step of finely adjusting the frequency of each piezoelectric vibrator 101 sealed in the cavity C to be within a predetermined range is performed (S180). More specifically, the piezoelectric vibrating piece 104 is vibrated by applying a voltage to a pair of external electrodes 138 and 139 formed on the lower surface of the base substrate wafer 140. Then, laser light is irradiated from the outside through the lid substrate wafer 150 while measuring the frequency, and the fine-tuning film 121b of the weight metal film 121 is evaporated. Thereby, since the weight of the tip side of the pair of vibrating arm portions 110 and 111 changes, the frequency of the piezoelectric vibrating piece 104 can be finely adjusted so as to be within a predetermined range of the nominal frequency.
- a cutting process for cutting the bonded wafer body 160 along the cutting line M shown in FIG. 44 into small pieces is performed (S190).
- the piezoelectric resonator element 104 is sealed in the cavity C formed between the base substrate 102 and the lid substrate 103 bonded to each other, and the two-layer structure surface-mount type piezoelectric vibrator shown in FIG. A plurality of 101 can be manufactured at a time.
- the process sequence may be such that the fine adjustment step (S180) is performed after the cutting step (S190) is performed to make the individual piezoelectric vibrators 101 into pieces.
- fine adjustment step (S180) fine adjustment can be performed in the state of the wafer body 160, so that the plurality of piezoelectric vibrators 101 can be finely adjusted more efficiently. Therefore, it is preferable because throughput can be improved.
- an internal electrical characteristic inspection is performed (S195). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependence of resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating piece 104 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 101 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 101.
- the piezoelectric vibrator 101 of the present embodiment has no depression on the surface and can form the through electrodes 132 and 133 in a substantially flush state with respect to the base substrate 102, the through electrodes 132 and 133 are routed around the lead electrode 136. 137 and the external electrodes 138 and 139 can be reliably adhered to each other. As a result, stable continuity between the piezoelectric vibrating piece 104 and the external electrodes 138 and 139 can be ensured, and the reliability of the operation performance can be improved to achieve high performance. In addition, since the airtightness in the cavity C can be reliably maintained, the quality can be improved also in this respect.
- the polishing amount can be set based on the thickness of the base substrate wafer 140 and the depths of the holes 130a and 131a without depending on the volume of the paste P that decreases during firing. That is, as shown in FIG. 40, the polishing amount T3 can be easily set from the thickness T1 of the base substrate wafer 140 and the depth T2 of the holes 130a and 131a. Therefore, regarding the lower surface polishing step, it is not necessary to perform polishing after confirming the state of the paste P, and a predetermined amount may be polished. Therefore, insufficient polishing or excessive polishing can be prevented. Further, since the through electrodes 132 and 133 can be formed by a simple method using the paste P, the process can be simplified.
- the holes 130a and 131a which are bottomed holes, are used when embedding the paste P, the embedding work of the paste P is easy, and the process can be simplified. In addition, there is no fear of using the paste P wastefully. Further, according to the manufacturing method of the present embodiment, a plurality of the piezoelectric vibrators 101 can be manufactured at a time, so that the cost can be reduced.
- the piezoelectric vibrator 201 of the present embodiment is formed in a box shape in which a base substrate 202 and a lid substrate 203 are laminated in two layers, and a piezoelectric element is formed in an internal cavity C.
- This is a surface-mount type piezoelectric vibrator in which the resonator element 204 is housed.
- the excitation electrode 215, the extraction electrodes 219 and 220, the mount electrodes 216 and 217, and the weight metal film 221 which will be described later are omitted for easy understanding of the drawing.
- the piezoelectric vibrating piece 204 is a tuning fork type vibrating piece formed of a piezoelectric material such as crystal, lithium tantalate, or lithium niobate, and when a predetermined voltage is applied. It vibrates.
- the piezoelectric vibrating piece 204 includes a pair of vibrating arm portions 210 and 211 arranged in parallel, a base portion 212 that integrally fixes a base end side of the pair of vibrating arm portions 210 and 211, and a pair of vibrating arm portions 210.
- the piezoelectric vibrating piece 204 of the present embodiment includes groove portions 218 formed along the longitudinal direction of the vibrating arm portions 210 and 211 on both main surfaces of the pair of vibrating arm portions 210 and 211, respectively.
- the groove portion 218 is formed from the proximal end side of the vibrating arm portions 210 and 211 to a substantially middle vicinity.
- the excitation electrode 215 composed of the first excitation electrode 213 and the second excitation electrode 214 is an electrode that vibrates the pair of vibrating arm portions 210 and 211 at a predetermined resonance frequency in a direction approaching or separating from each other. Patterned on the outer surfaces of the vibrating arm portions 210 and 211 while being electrically separated from each other. Specifically, as shown in FIG. 51, the first excitation electrode 213 is mainly formed on the groove portion 218 of one vibrating arm portion 210 and on both side surfaces of the other vibrating arm portion 211, and the second The excitation electrode 214 is mainly formed on both side surfaces of one vibrating arm portion 210 and on the groove portion 218 of the other vibrating arm portion 211.
- the first excitation electrode 213 and the second excitation electrode 214 are electrically connected to the mount electrodes 216 and 217 via the extraction electrodes 219 and 220, respectively, on both main surfaces of the base 212. Connected. A voltage is applied to the piezoelectric vibrating piece 204 through the mount electrodes 216 and 217.
- the excitation electrode 215, the mount electrodes 216 and 217, and the extraction electrodes 219 and 220 described above are made of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al), or titanium (Ti). It is formed.
- a weight metal film 221 for adjusting (frequency adjustment) so as to vibrate its own vibration state within a predetermined frequency range is coated on the tips of the pair of vibrating arm portions 210 and 211.
- the weight metal film 221 is divided into a coarse adjustment film 221a used when the frequency is roughly adjusted and a fine adjustment film 221b used when the frequency is finely adjusted.
- the frequency of the pair of vibrating arm portions 210 and 211 can be kept within the range of the nominal frequency of the device.
- the piezoelectric vibrating piece 204 configured in this way is bump-bonded to the upper surface of the base substrate 202 by using bumps B such as gold as shown in FIGS. More specifically, bump bonding is performed with a pair of mount electrodes 216 and 217 in contact with two bumps B formed on routing electrodes 236 and 237, which will be described later, patterned on the upper surface of the base substrate 202. ing. As a result, the piezoelectric vibrating reed 204 is supported in a state of floating from the upper surface of the base substrate 202, and the mount electrodes 216 and 217 and the routing electrodes 236 and 237 are electrically connected to each other.
- the lid substrate 203 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, and is formed in a plate shape as shown in FIGS. 45, 47 and 48.
- a rectangular concave portion 203a in which the piezoelectric vibrating piece 204 is accommodated is formed on the bonding surface side to which the base substrate 202 is bonded.
- the recess 203 a is a cavity recess that becomes a cavity C that accommodates the piezoelectric vibrating reed 204 when the two substrates 202 and 203 are overlaid.
- the lid substrate 203 is anodically bonded to the base substrate 202 with the recess 203a facing the base substrate 202 side.
- the base substrate 202 is a transparent insulating substrate made of a glass material, for example, soda-lime glass, like the lid substrate 203, and has a size that can be superimposed on the lid substrate 203 as shown in FIGS. It is formed in a plate shape.
- the base substrate 202 is formed with a pair of through holes (through holes) 230 and 231 penetrating the base substrate 202. At this time, the pair of through holes 230 and 231 are formed so as to be accommodated in the cavity C. More specifically, in the through holes 230 and 231 of this embodiment, one through hole 230 is located on the base 212 side of the mounted piezoelectric vibrating piece 204, and the other through hole is on the tip side of the vibrating arm portions 210 and 211.
- the hole 231 is located.
- a through hole having a tapered cross section whose diameter gradually decreases toward the lower surface of the base substrate 202 will be described as an example.
- the present invention is not limited to this case, and the base substrate 202 passes straight. It can be a through hole. In any case, it only needs to penetrate the base substrate 202.
- a pair of through electrodes 232 and 233 formed so as to fill the through holes 230 and 231 are formed.
- these through electrodes 232 and 233 are formed by curing a paste P containing a plurality of metal fine particles P1, and completely close the through holes 230 and 231 to seal the airtightness in the cavity C.
- the external electrodes 238 and 239 described later and the routing electrodes 236 and 237 are connected to each other.
- the through electrodes 232 and 233 are ensured in electrical conductivity because the plurality of metal fine particles P1 contained in the paste P are in contact with each other.
- the metal fine particles P1 of the present embodiment are formed in an elongated fiber shape (non-spherical shape) with copper or the like will be described as an example.
- a conductive film for example, aluminum is used to bond a bonding film 235 for anodic bonding, A pair of routing electrodes 236 and 237 are patterned.
- the bonding film 235 is formed along the periphery of the base substrate 202 so as to surround the periphery of the recess 203 a formed in the lid substrate 203.
- the pair of lead-out electrodes 236 and 237 electrically connect one of the through electrodes 232 and 233 to the one mount electrode 216 of the piezoelectric vibrating piece 204 and the other through electrode 233. Patterning is performed so as to electrically connect the other mount electrode 217 of the piezoelectric vibrating piece 204. More specifically, the one lead-out electrode 236 is formed directly above the one through electrode 232 so as to be positioned directly below the base 212 of the piezoelectric vibrating piece 204. The other routing electrode 237 is routed from the position adjacent to the one routing electrode 236 along the vibrating arm portions 210 and 211 to the distal end side of the vibrating arm portions 210 and 211, and then the other through electrode 233. It is formed to be located directly above.
- Bumps B are formed on the pair of routing electrodes 236 and 237, and the piezoelectric vibrating piece 204 is mounted using the bumps B. Accordingly, one mount electrode 216 of the piezoelectric vibrating piece 204 is electrically connected to one through electrode 232 through one routing electrode 236, and the other mount electrode 217 is passed through the other routing electrode 237 to the other through.
- the electrode 233 is electrically connected.
- external electrodes 238 and 239 are formed on the lower surface of the base substrate 202, which are electrically connected to the pair of through electrodes 232 and 233, respectively. That is, one external electrode 238 is electrically connected to the first excitation electrode 213 of the piezoelectric vibrating piece 204 via one through electrode 232 and one routing electrode 236. The other external electrode 239 is electrically connected to the second excitation electrode 214 of the piezoelectric vibrating piece 204 via the other through electrode 233 and the other routing electrode 237.
- a predetermined drive voltage is applied to the external electrodes 238 and 239 formed on the base substrate 202.
- a current can be passed through the excitation electrode 215 including the first excitation electrode 213 and the second excitation electrode 214 of the piezoelectric vibrating piece 204, and the pair of vibrating arm portions 210 and 211 are set in a direction in which they approach and separate from each other.
- Can be vibrated at a frequency of The vibration of the pair of vibrating arm portions 210 and 211 can be used as a time source, a control signal timing source, a reference signal source, and the like.
- the piezoelectric vibrating reed manufacturing step is performed to manufacture the piezoelectric vibrating reed 204 shown in FIGS. 49 to 51 (S210). Specifically, first, a quartz Lambert rough is sliced at a predetermined angle to obtain a wafer having a constant thickness. Subsequently, the wafer is lapped and subjected to rough processing, and then the work-affected layer is removed by etching, and then mirror polishing such as polishing is performed to obtain a wafer having a predetermined thickness.
- the wafer is patterned with the outer shape of the piezoelectric vibrating piece 204 by photolithography technology, and a metal film is formed and patterned, so that the excitation electrode 215 and the lead are extracted. Electrodes 219 and 220, mount electrodes 216 and 217, and a weight metal film 221 are formed. Thereby, a plurality of piezoelectric vibrating reeds 204 can be manufactured.
- the resonance frequency is coarsely adjusted. This is performed by irradiating the coarse adjustment film 221a of the weight metal film 221 with laser light to evaporate a part thereof and changing the weight. Note that fine adjustment for adjusting the resonance frequency with higher accuracy is performed after mounting. This will be described later.
- a first wafer manufacturing process is performed in which a lid substrate wafer 250 to be the lid substrate 203 later is manufactured up to a state immediately before anodic bonding (S220).
- a lid substrate wafer 250 to be the lid substrate 203 later is manufactured up to a state immediately before anodic bonding (S220).
- a disc-shaped lid substrate wafer 250 from which the outermost work-affected layer has been removed by etching or the like is formed ( S221).
- a recess forming step is performed in which a plurality of cavity recesses 203a are formed in the matrix direction by etching or the like on the bonding surface of the lid substrate wafer 250 (S222). At this point, the first wafer manufacturing process is completed.
- a second wafer manufacturing process is performed in which the base substrate wafer 240 to be the base substrate 202 later is manufactured up to the state immediately before anodic bonding (S230).
- a disc-shaped base substrate wafer 240 is formed by removing the outermost damaged layer by etching or the like (S231).
- a through electrode forming process for forming a plurality of pairs of through electrodes 232 and 233 on the base substrate wafer 240 is performed (S232).
- the through electrode forming step will be described in detail.
- a through hole forming step (S233) for forming a plurality of pairs of through holes 230 and 231 that penetrates the base substrate wafer 240 is performed.
- a dotted line M shown in FIG. 55 illustrates a cutting line that is cut in a subsequent cutting step.
- sand blasting is performed from the upper surface side of the base substrate wafer 240.
- through-holes 230 and 231 having a tapered section whose diameter gradually decreases toward the lower surface of the base substrate wafer 240 can be formed.
- a plurality of pairs of through holes 230 and 231 are formed so as to be accommodated in the recess 203a formed in the lid substrate wafer 250.
- one through hole 230 is formed on the base 212 side of the piezoelectric vibrating piece 204, and the other through hole 231 is formed on the tip side of the vibrating arm sections 210 and 211.
- a filling process is performed in which the paste P including the metal fine particles P1 is filled in the plurality of through holes 230 and 231 without gaps to close the through holes 230 and 231 (S234).
- 57 to 60 the illustration of the metal fine particles P1 is omitted.
- a firing process is performed in which the filled paste P is fired at a predetermined temperature and cured (S235).
- the paste P is firmly fixed to the inner surfaces of the through holes 230 and 231.
- the organic substance in the paste P which is not illustrated evaporates at the time of baking, the hardened paste P will reduce a volume compared with the time of a filling process, as shown in FIG. Therefore, a dent is inevitably generated on the surface of the paste P.
- a polishing step is performed in which both surfaces of the base substrate wafer 240 are polished by a predetermined thickness (S236).
- S236 a predetermined thickness
- both surfaces of the paste P cured by baking can be polished simultaneously, so that the periphery of the recessed portion can be scraped off. That is, the surface of the paste P can be flattened. Therefore, as shown in FIG. 60, the surface of the base substrate wafer 240 and the surfaces of the through electrodes 232 and 233 can be substantially flush with each other. By performing this polishing process, the through electrode forming process is completed.
- a conductive material is patterned on the upper surface of the base substrate wafer 240, and as shown in FIGS. 61 and 62, a bonding film forming step for forming the bonding film 235 is performed (S237), and each pair of penetrations is performed.
- the dotted line M shown in FIG.61 and FIG.62 has shown the cutting line cut
- the through electrodes 232 and 233 have no dents on the surface and are substantially flush with the upper surface of the base substrate wafer 240.
- the routing electrodes 236 and 237 patterned on the upper surface of the base substrate wafer 240 are in close contact with the through electrodes 232 and 233 without generating a gap or the like therebetween. As a result, it is possible to ensure the electrical connection between one routing electrode 236 and one through electrode 232 and the electrical connection between the other routing electrode 237 and the other through electrode 233. At this point, the second wafer manufacturing process is completed.
- the step (S237) may be performed, or both steps may be performed simultaneously. Regardless of the order of steps, the same effects can be obtained. Therefore, the process order may be changed as necessary.
- a mounting process is performed in which the produced plurality of piezoelectric vibrating reeds 204 are joined to the upper surface of the base substrate wafer 240 via the routing electrodes 236 and 237, respectively (S240).
- bumps B such as gold are formed on the pair of lead-out electrodes 236 and 237, respectively.
- the piezoelectric vibrating piece 204 is pressed against the bump B while heating the bump B to a predetermined temperature. Accordingly, the piezoelectric vibrating reed 204 is mechanically supported by the bumps B, and the mount electrodes 216 and 217 and the routing electrodes 236 and 237 are electrically connected.
- the pair of excitation electrodes 215 of the piezoelectric vibrating piece 204 is in a conductive state with respect to the pair of through electrodes 232 and 233, respectively.
- the piezoelectric vibrating piece 204 is bump-bonded, it is supported in a state of being lifted from the upper surface of the base substrate wafer 240.
- an overlaying process of overlaying the lid substrate wafer 250 on the base substrate wafer 240 is performed (S250). Specifically, both wafers 240 and 250 are aligned at correct positions while using a reference mark (not shown) as an index. As a result, the mounted piezoelectric vibrating reed 204 is accommodated in the cavity C surrounded by the recess 203 a formed in the base substrate wafer 240 and both the wafers 240 and 250.
- the superposed two wafers 240 and 250 are put in an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature atmosphere to perform the anodic bonding (S260). Specifically, a predetermined voltage is applied between the bonding film 235 and the lid substrate wafer 250. As a result, an electrochemical reaction occurs at the interface between the bonding film 235 and the lid substrate wafer 250, and the two are firmly bonded and anodically bonded. Thereby, the piezoelectric vibrating piece 204 can be sealed in the cavity C, and the wafer body 260 shown in FIG. 63 in which the base substrate wafer 240 and the lid substrate wafer 250 are joined can be obtained. In FIG.
- a state where the wafer body 260 is disassembled is shown, and the bonding film 235 is omitted from the base substrate wafer 240.
- a dotted line M shown in FIG. 63 illustrates a cutting line that is cut in a subsequent cutting step.
- the through holes 230 and 231 formed in the base substrate wafer 240 are completely blocked by the through electrodes 232 and 233, so that the airtightness in the cavity C is reduced. Will not be damaged through.
- the paste P constituting the through electrodes 232 and 233 is firmly adhered to the inner surfaces of the through holes 230 and 231, the airtightness in the cavity C can be reliably maintained.
- a conductive material is patterned on the lower surface of the base substrate wafer 240, and a pair of external electrodes 238 and 239 electrically connected to the pair of through electrodes 232 and 233, respectively.
- a plurality of external electrode forming steps are formed (S270).
- the piezoelectric vibrating reed 204 sealed in the cavity C can be operated using the external electrodes 238 and 239.
- the through electrodes 232 and 233 are substantially flush with the lower surface of the base substrate wafer 240 as in the case of forming the lead-out electrodes 236 and 237.
- the external electrodes 238 and 239 are in close contact with the through electrodes 232 and 233 without generating a gap or the like therebetween. Thereby, the electrical continuity between the external electrodes 238 and 239 and the through electrodes 232 and 233 can be ensured.
- a fine adjustment step is performed in which the frequency of each piezoelectric vibrator 201 sealed in the cavity C is finely adjusted within a predetermined range in the state of the wafer body 260 (S280). More specifically, the piezoelectric vibrating piece 204 is vibrated by applying a voltage to a pair of external electrodes 238 and 239 formed on the lower surface of the base substrate wafer 240. Then, laser light is irradiated from the outside through the lid substrate wafer 250 while measuring the frequency, and the fine adjustment film 221b of the weight metal film 221 is evaporated. Thereby, since the weight of the tip end side of the pair of vibrating arm portions 210 and 211 changes, the frequency of the piezoelectric vibrating piece 204 can be finely adjusted so as to be within a predetermined range of the nominal frequency.
- a cutting process is performed in which the bonded wafer body 260 is cut along the cutting line M shown in FIG. 63 into pieces (S290).
- the piezoelectric vibration piece 204 is sealed in the cavity C formed between the base substrate 202 and the lid substrate 203 that are anodically bonded to each other, and the two-layer structure surface mount type piezoelectric vibration shown in FIG. A plurality of children 201 can be manufactured at a time.
- the process order of performing the fine adjustment process (S280) may be used.
- fine adjustment step (S280) fine adjustment can be performed in the state of the wafer body 260, so that the plurality of piezoelectric vibrators 201 can be finely adjusted more efficiently. Therefore, it is preferable because throughput can be improved.
- an internal electrical characteristic inspection is performed (S295). That is, the resonance frequency, resonance resistance value, drive level characteristic (excitation power dependence of resonance frequency and resonance resistance value), etc. of the piezoelectric vibrating piece 204 are measured and checked. In addition, the insulation resistance characteristics and the like are also checked. Finally, an appearance inspection of the piezoelectric vibrator 201 is performed to finally check dimensions, quality, and the like. This completes the manufacture of the piezoelectric vibrator 201.
- the piezoelectric vibrator 201 of the present embodiment has no depressions on the surface, and the through electrodes 232 and 233 can be formed in a substantially flush state with respect to the base substrate 202. 237 and the external electrodes 238 and 239 can be reliably adhered to each other. As a result, stable electrical continuity between the piezoelectric vibrating piece 204 and the external electrodes 238 and 239 can be ensured, and the reliability of the operation performance can be improved to achieve high performance. In addition, since the airtightness in the cavity C can be reliably maintained, the quality can be improved also in this respect. In addition, since the through electrodes 232 and 233 can be formed by a simple method using the paste P, the process can be simplified. Further, according to the manufacturing method of the present embodiment, a plurality of the piezoelectric vibrators 201 can be manufactured at a time, so that the cost can be reduced.
- the oscillator 500 is configured such that the piezoelectric vibrator 1 is an oscillator electrically connected to the integrated circuit 501.
- the oscillator 500 includes a substrate 503 on which an electronic component 502 such as a capacitor is mounted. On the substrate 503, the integrated circuit 501 for the oscillator is mounted, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 501.
- the electronic component 502, the integrated circuit 501, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern (not shown). Each component is molded with a resin (not shown).
- the piezoelectric vibrating reed 4 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal by the piezoelectric characteristics of the piezoelectric vibrating piece 4 and input to the integrated circuit 501 as an electric signal.
- the input electrical signal is subjected to various processes by the integrated circuit 501 and output as a frequency signal.
- the piezoelectric vibrator 1 functions as an oscillator.
- the operation date and time of the device or external device A function for controlling the time, providing a time, a calendar, and the like can be added.
- the oscillator 500 of the present embodiment since the high-quality piezoelectric vibrator 1 in which the airtightness in the cavity C is reliable and the operation reliability is improved is provided, the oscillator 500 itself has the operation reliability as well. The quality can be improved. In addition to this, it is possible to obtain a highly accurate frequency signal that is stable over a long period of time.
- the piezoelectric vibrator 1 according to the first embodiment has been described as an example, the piezoelectric vibrators according to other embodiments can achieve the same effects.
- the portable information device 110 having the piezoelectric vibrator 1 of the first embodiment will be described as an example of the electronic device.
- the portable information device 510 of this embodiment is typified by, for example, a mobile phone, and is a development and improvement of a wrist watch in the prior art. The appearance is similar to that of a wristwatch, and a liquid crystal display is arranged in a portion corresponding to a dial so that the current time and the like can be displayed on this screen.
- a communication device it is possible to perform communication similar to that of a conventional mobile phone by using a speaker and a microphone that are removed from the wrist and incorporated in the inner portion of the band. However, it is much smaller and lighter than conventional mobile phones.
- the portable information device 510 includes the piezoelectric vibrator 1 and a power supply unit 511 for supplying power.
- the power supply unit 511 is made of, for example, a lithium secondary battery.
- the power supply unit 511 includes a control unit 512 that performs various controls, a clock unit 513 that counts time, a communication unit 514 that communicates with the outside, a display unit 515 that displays various information, and the like.
- a voltage detection unit 516 that detects the voltage of the functional unit is connected in parallel.
- the power supply unit 511 supplies power to each functional unit.
- the control unit 512 controls operation of the entire system such as transmission and reception of voice data, measurement and display of the current time by controlling each function unit.
- the control unit 512 includes a ROM in which a program is written in advance, a CPU that reads and executes the program written in the ROM, and a RAM that is used as a work area of the CPU.
- the timer unit 513 includes an integrated circuit including an oscillation circuit, a register circuit, a counter circuit, an interface circuit, and the like, and the piezoelectric vibrator 1.
- the piezoelectric vibrating piece 4 vibrates, and this vibration is converted into an electric signal by the piezoelectric characteristics of the crystal and is input to the oscillation circuit as an electric signal.
- the output of the oscillation circuit is binarized and counted by a register circuit and a counter circuit. Then, signals are transmitted to and received from the control unit 512 via the interface circuit, and the current time, current date, calendar information, and the like are displayed on the display unit 515.
- the communication unit 514 has functions similar to those of a conventional mobile phone, and includes a radio unit 517, a voice processing unit 518, a switching unit 519, an amplification unit 520, a voice input / output unit 521, a telephone number input unit 522, and a ring tone generation unit. 523 and a call control memory unit 524.
- the wireless unit 517 exchanges various data such as voice data with the base station via the antenna 525.
- the audio processing unit 518 encodes and decodes the audio signal input from the radio unit 517 or the amplification unit 520.
- the amplifying unit 520 amplifies the signal input from the audio processing unit 518 or the audio input / output unit 521 to a predetermined level.
- the voice input / output unit 521 includes a speaker, a microphone, and the like, and amplifies a ringtone or a received voice or collects a voice.
- the ring tone generator 523 generates a ring tone in response to a call from the base station.
- the switching unit 519 switches the amplifying unit 520 connected to the voice processing unit 518 to the ringing tone generating unit 523 only when receiving a call, so that the ringing tone generated by the ringing tone generating unit 523 passes through the amplifying unit 520.
- the call control memory unit 524 stores a program related to incoming / outgoing call control of communication.
- the telephone number input unit 522 includes, for example, number keys from 0 to 9 and other keys. By pressing these number keys and the like, a telephone number of a call destination is input.
- the voltage detection unit 516 detects the voltage drop and notifies the control unit 512 of the voltage drop.
- the predetermined voltage value at this time is a value set in advance as a minimum voltage necessary for stably operating the communication unit 514, and is, for example, about 3V.
- the control unit 512 prohibits the operations of the radio unit 517, the voice processing unit 518, the switching unit 519, and the ring tone generation unit 523. In particular, it is essential to stop the operation of the wireless unit 517 with high power consumption. Further, the display unit 515 displays that the communication unit 514 has become unusable due to insufficient battery power.
- the operation of the communication unit 514 can be prohibited by the voltage detection unit 516 and the control unit 512, and that effect can be displayed on the display unit 515.
- This display may be a text message, but as a more intuitive display, a x (X) mark may be attached to the telephone icon displayed at the top of the display surface of the display unit 515.
- the function of the communication part 514 can be stopped more reliably by providing the power supply cutoff part 526 that can selectively cut off the power supply of the part related to the function of the communication part 514.
- the portable information device 510 of the present embodiment itself operates in the same manner because it includes the high-quality piezoelectric vibrator 1 in which the airtightness in the cavity C is reliable and the operation reliability is improved. Reliability can be improved and quality can be improved. In addition to this, it is possible to display highly accurate clock information that is stable over a long period of time.
- the piezoelectric vibrator 1 according to the first embodiment has been described as an example, the piezoelectric vibrators according to other embodiments can achieve the same effects.
- the radio timepiece 530 of the present embodiment includes the piezoelectric vibrator 1 electrically connected to the filter unit 531, receives a standard radio wave including timepiece information, and accurately It is a clock with a function of automatically correcting and displaying the correct time.
- transmitting stations transmitting stations that transmit standard radio waves in Fukushima Prefecture (40 kHz) and Saga Prefecture (60 kHz), each transmitting standard radio waves.
- Long waves such as 40 kHz or 60 kHz have the property of propagating the surface of the earth and the property of propagating while reflecting the ionosphere and the surface of the earth, so the propagation range is wide, and the above two transmitting stations cover all of Japan. is doing.
- the antenna 532 receives a long standard wave of 40 kHz or 60 kHz.
- the long-wave standard radio wave is obtained by subjecting time information called a time code to AM modulation on a 40 kHz or 60 kHz carrier wave.
- the received long standard wave is amplified by the amplifier 533 and filtered and tuned by the filter unit 531 having the plurality of piezoelectric vibrators 1.
- the piezoelectric vibrator 1 according to this embodiment includes crystal vibrator portions 538 and 539 having resonance frequencies of 40 kHz and 60 kHz that are the same as the carrier frequency.
- the filtered signal having a predetermined frequency is detected and demodulated by a detection and rectification circuit 534.
- the time code is extracted via the waveform shaping circuit 535 and counted by the CPU 536.
- the CPU 536 reads information such as the current year, accumulated date, day of the week, and time. The read information is reflected in the RTC 537, and accurate time information is displayed. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrator portions 538 and 539 are preferably vibrators having the tuning-fork type structure described above.
- the frequency of the long standard radio wave is different overseas.
- a standard radio wave of 77.5 KHz is used. Therefore, when the radio timepiece 530 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required.
- the radio-controlled timepiece itself includes the high-quality piezoelectric vibrator 1 that is surely hermetically sealed in the cavity C and improved in operation reliability. To improve the quality. In addition to this, it is possible to count time stably and with high accuracy over a long period of time.
- the piezoelectric vibrator 1 according to the first embodiment has been described as an example, the piezoelectric vibrators according to other embodiments can achieve the same effects.
- a piezoelectric vibrating piece with a groove having grooves formed on both surfaces of a vibrating arm portion has been described as an example.
- a piezoelectric vibrating piece of a type without a groove may be used. Absent.
- by forming a groove it is possible to increase the electric field efficiency between the pair of excitation electrodes when a predetermined voltage is applied to the pair of excitation electrodes, thereby further reducing vibration loss and further improving vibration characteristics. can do.
- the CI value Crystal Impedance
- the piezoelectric vibrating piece can be further improved in performance.
- a tuning fork type piezoelectric vibrating piece has been described as an example, but the present invention is not limited to a tuning fork type.
- it may be a thickness sliding vibration piece.
- the base substrate and the lid substrate are anodically bonded via a bonding film.
- the present invention is not limited to anodic bonding.
- anodic bonding is preferable because both substrates can be firmly bonded.
- the piezoelectric vibrating piece is bump-bonded.
- the present invention is not limited to bump bonding.
- the piezoelectric vibrating piece may be bonded with a conductive adhesive.
- the bumps by bonding the bumps, the piezoelectric vibrating piece can be lifted from the upper surface of the base substrate, and a minimum vibration gap necessary for vibration can be secured naturally. Therefore, it is preferable to perform bump bonding.
- a pair of through electrodes has been described. However, one or three or more may be provided.
- the paste when performing the filling step in each of the above embodiments, the paste may be embedded after defoaming (for example, centrifugal defoaming or vacuuming).
- defoaming for example, centrifugal defoaming or vacuuming.
- a paste P in which glass frit (particles) G having the same thermal expansion coefficient as the base substrate (base substrate wafer) is mixed may be used.
- the thermal expansion of the paste P can be brought close to the thermal expansion of the base substrate wafer during firing. Therefore, a gap or the like due to the difference in thermal expansion is unlikely to occur between the two, and the two can be brought into closer contact.
- the mixing ratio of the glass frit G is preferably as much as possible as long as the conductivity of the metal fine particles P1 is not impaired.
- the shape of the metal fine particles may be other shapes.
- it may be spherical.
- the metal fine particles when they are in contact with each other, they are in point contact so that electrical continuity can be secured in the same manner.
- non-spherical fine metal particles such as elongated fibers
- it is likely to be a line contact rather than a point contact. Therefore, since the electrical continuity of the through electrode can be further improved, it is preferable to use a paste containing non-spherical metal fine particles rather than a spherical shape.
- metal fine particles P1 are non-spherical, for example, a strip shape shown in FIG. 68A, a corrugated shape shown in FIG. 68B, a cross-sectional star shape shown in FIG. 68C, or a shape shown in FIG. It may be a cross-shaped cross section.
- the through electrode is provided so that the diameter gradually increases toward the external electrode.
- You may provide the penetration electrodes 32 and 33 so that a diameter may become small gradually as it goes. Even in this case, the same effects can be achieved.
- the lower surface of the base substrate wafer is polished until the bottom of the holding hole is reached in the lower surface polishing step.
- polishing to the upper surface side is also acceptable.
- the holding hole is formed in a bottomed hole shape such that the lower surface side of the base substrate wafer is the bottom, but other shapes may be used. .
- a through hole formed in the thickness direction of the base substrate wafer may be used.
- the lower surface of the base substrate wafer is polished to the position reaching the bottom of the hole during the lower surface polishing step.
- the present invention is not limited to this, and the polishing is performed to a polishing amount T3 or more. It doesn't matter.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Crystallography & Structural Chemistry (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
Description
本出願は、特願2008-35508号と、特願2008-36419号と、特願2008-35511号と、を基礎出願とし、その内容を取り込むものとする。
その結果、キャビティC内の気密が損なわれたり、圧電振動片603と外部電極606との導通性が損なわれたりする可能性があった。
(1)本発明に係る圧電振動子の製造方法は、互いに接合されたベース基板とリッド基板との間に形成されたキャビティ内に圧電振動片が封止された圧電振動子を、ベース基板用ウエハとリッド基板用ウエハとを利用して一度に複数製造する方法であって、前記リッド基板用ウエハに、両ウエハが重ね合わされたときに前記キャビティを形成するキャビティ用の凹部を複数形成する凹部形成工程と;前記ベース基板用ウエハに、複数の金属微粒子を含んだペーストを利用して、ウエハを貫通する貫通電極を複数形成する貫通電極形成工程と;前記ベース基板用ウエハの上面に、前記貫通電極に対して電気的に接続された引き回し電極を複数形成する引き回し電極形成工程と;複数の前記圧電振動片を、前記引き回し電極を介して前記ベース基板用ウエハの上面に接合するマウント工程と;前記ベース基板用ウエハと前記リッド基板用ウエハとを重ね合わせて、前記凹部と両ウエハとで囲まれる前記キャビティ内に圧電振動片を収納する重ね合わせ工程と;前記ベース基板用ウエハと前記リッド基板用ウエハとを接合し、前記圧電振動片を前記キャビティ内に封止する接合工程と;前記ベース基板用ウエハの下面に、前記貫通電極に電気的に接続された外部電極を複数形成する外部電極形成工程と;接合された前記両ウエハを切断して、複数の前記圧電振動子に小片化する切断工程と;を備え、前記貫通電極形成工程が、前記ペーストを保持するための保持孔を前記ベース基板用ウエハに複数形成する保持孔形成工程と;これら複数の保持孔内に前記ペーストを埋め込んで保持孔を塞ぐ充填工程と;埋め込んだペーストを仮焼成した後に本焼成して硬化させる焼成工程と;仮焼成或いは本焼成した後に、ベース基板用ウエハの両面をそれぞれ所定の厚み研磨する研磨工程と;を有し、前記研磨工程を本焼成後に行う場合には、前記焼成工程時に、仮焼成で減少したペースト量に相当する新たなペーストを仮焼成後のペーストに補充して、ペースト全体を再度仮焼成した後に本焼成する。
この貫通電極形成工程は、ベース基板用ウエハを研磨する研磨工程のタイミングに依存して大きく二通りの作業順序に分かれる。ここでは、まず、複数の金属微粒子を含んだペーストを本焼成した後に研磨工程を行う場合について説明する。
充填工程で埋め込まれたペーストを仮焼成するまでは上記した場合と同様に行う。充填工程で埋め込まれたペーストを仮焼成した後には、上記したように、ペーストの表面に凹みが生じる。そこで、この仮焼成を行った直後に、ベース基板用ウエハの両面をそれぞれ所定の厚み研磨する研磨工程を行う。これにより、凹んでいる部分の周囲を削ることができるので、ベース基板用ウエハの表面と仮焼成後のペーストの表面とがほぼ面一な状態となる。
また、この仮焼成におけるペーストの体積の減少量は、仮焼成せずに一回で本焼成する場合に比べると小さい。従って、仮焼成によって生じるペースト表面の凹みは、同量のペーストを仮焼成せずに1度に本焼成する際に生じる凹みに比べて小さい。よって、ペーストを仮焼成した直後に研磨工程を行うことで研磨量を抑えることができ、研磨工程に要する時間を短くすることができる。
特に、貫通電極は、上述したようにベース基板用ウエハの上面に対してほぼ面一な状態となっている。そのため、ベース基板用ウエハの上面にパターニングされた引き回し電極は、間に隙間等を発生させることなく貫通電極に対して密着した状態で接する。これにより、引き回し電極と貫通電極との導通性を確実なものにすることができる。
最後に、接合されたベース基板用ウエハ及びリッド基板用ウエハを切断して、複数の圧電振動子に小片化する切断工程を行う。
特に、ベース基板に対してほぼ面一な状態で貫通電極を形成できるので、貫通電極を、引き回し電極及び外部電極に対して確実に密着させることができる。その結果、圧電振動片と外部電極との安定した導通性を確保することができ、作動性能の信頼性を向上して、高品質化を図ることができる。また、キャビティ内の気密に関しても確実に維持することができるので、この点においても高品質化を図ることができる。加えて、ペーストを利用した簡単な方法で貫通電極を形成できるので、工程の簡素化を図ることができる。
また、研磨工程は、上面研磨工程と下面研磨工程とを備えている。特に、下面研磨工程においては、焼成時に減少するペーストの体積に依存することなく、ベース基板用ウエハの厚みと保持孔の深さとに基づいて研磨量を設定することができる。従って、下面研磨工程に関しては、ペーストの状態を確認した上で研磨を行うといったことが必要なく、予め決められた量を研磨すればよい。従って、研磨不足や過度の研磨を防ぐことができる。
これら上面研磨工程及び下面研磨工程を行うことで、貫通電極形成工程が終了する。なお、ペーストに含まれる複数の金属微粒子が互いに接触し合っていることで、貫通電極の電気導通性が確保されている。
特に、貫通電極は、上述したように表面に凹みがなく、ベース基板用ウエハの上面に対してほぼ面一な状態となっている。そのため、ベース基板用ウエハの上面にパターニングされた引き回し電極は、間に隙間等を発生させることなく貫通電極に対して密着した状態で接する。これにより、引き回し電極と貫通電極との導通性を確実なものにすることができる。
次に、重ね合わせた両ウエハを接合する接合工程を行う。これにより、両ウエハが強固に密着するので、圧電振動片をキャビティ内に封止することができる。この際、ベース基板用ウエハに形成された貫通孔は、貫通電極によって塞がれているので、キャビティ内の気密が貫通孔を通じて損なわれることがない。特に、貫通電極を構成するペーストは、貫通孔の内面に強固に密着しているので、キャビティ内の気密を確実に維持することができる。
最後に、接合されたベース基板用ウエハ及びリッド基板用ウエハを切断して、複数の圧電振動子に小片化する切断工程を行う。
特に、表面に凹みがなく、ベース基板に対してほぼ面一な状態で貫通電極を形成できるので、貫通電極を、引き回し電極及び外部電極に対して確実に密着させることができる。その結果、圧電振動片と外部電極との安定した導通性を確保することができ、作動性能の信頼性を向上して、高品質化を図ることができる。また、キャビティ内の気密に関しても確実に維持することができるので、この点においても高品質化を図ることができる。
また、ペーストを利用した簡単な方法で貫通電極を形成できるので、工程の簡素化を図ることができる。更に、ペーストを埋め込む際に有底穴である穴部を用いているので、ペーストの埋め込み作業が容易であり、工程の簡素化を図ることができる。加えて、ペーストを無駄に使用する恐れが無い。
特に、貫通電極は、上述したように表面に凹みがなく、ベース基板用ウエハの上面に対してほぼ面一な状態となっている。そのため、ベース基板用ウエハの上面にパターニングされた引き回し電極は、間に隙間等を発生させることなく貫通電極に対して密着した状態で接する。これにより、引き回し電極と貫通電極との導通性を確実なものにすることができる。
最後に、接合されたベース基板用ウエハ及びリッド基板用ウエハを切断して、複数の圧電振動子に小片化する切断工程を行う。
特に、表面に凹みがなく、ベース基板に対してほぼ面一な状態で貫通電極を形成できるので、貫通電極を、引き回し電極及び外部電極に対して確実に密着させることができる。その結果、圧電振動片と外部電極との安定した導通性を確保することができ、作動性能の信頼性を向上して、高品質化を図ることができる。また、キャビティ内の気密に関しても確実に維持することができるので、この点においても高品質化を図ることができる。加えて、ペーストを利用した簡単な方法で貫通電極を形成できるので、工程の簡素化を図ることができる。
(18)また、本発明に係る電子機器は、上記(12)から(16)のいずれか1項に記載の圧電振動子が、計時部に電気的に接続されている。
(19)また、本発明に係る電波時計は、上記(12)から(16)のいずれか1項に記載の圧電振動子が、フィルタ部に電気的に接続されている。
C キャビティ
G ガラスフリット(粒体)
P ペースト
P1 金属微粒子
1、101、201 圧電振動子
2、102、202 ベース基板
3、103、203 リッド基板
3a、103a、203a キャビティ用の凹部
4、104、204 圧電振動片
30a、31a 保持孔
35、135、235 接合膜
36、37、136、137、236、237 引き回し電極
38、39、138、139、238、239 外部電極
40、140、240 ベース基板用ウエハ
50、150、250 リッド基板用ウエハ
130a、131a 穴部
230、231 スルーホール(貫通孔)
500 発振器
501…発振器の集積回路
510…携帯情報機器(電子機器)
513…電子機器の計時部
530…電波時計
531…電波時計のフィルタ部
以下、本発明に係る第1実施形態を、図1から図21を参照して説明する。
本実施形態の圧電振動子1は、図1から図4に示すように、ベース基板2とリッド基板3とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片4が収納された表面実装型の圧電振動子1である。
なお、図4においては、図面を見易くするために後述する励振電極15、引き出し電極19、20、マウント電極16、17及び重り金属膜21の図示を省略している。
この圧電振動片4は、平行に配置された一対の振動腕部10、11と、この一対の振動腕部10、11の基端側を一体的に固定する基部12と、一対の振動腕部10、11の外表面上に形成されて一対の振動腕部10、11を振動させる第1の励振電極13と第2の励振電極14とからなる励振電極15と、第1の励振電極13及び第2の励振電極14に電気的に接続されたマウント電極16、17とを有している。
また、本実施形態の圧電振動片4は、一対の振動腕部10、11の両主面上に、振動腕部10、11の長手方向に沿ってそれぞれ形成された溝部18を備えている。この溝部18は、振動腕部10、11の基端側から略中間付近まで形成されている。
なお、上述した励振電極15、マウント電極16、17及び引き出し電極19、20は、例えば、クロム(Cr)、ニッケル(Ni)、アルミニウム(Al)やチタン(Ti)等の導電性膜の被膜により形成されたものである。
このベース基板2には、ベース基板2を貫通する一対のスルーホール30、31が形成されている。この際、一対のスルーホール30、31は、キャビティC内に収まるように形成されている。より詳しく説明すると、本実施形態のスルーホール30、31は、マウントされた圧電振動片4の基部12側に一方のスルーホール30が位置し、振動腕部10、11の先端側に他方のスルーホール31が位置するように形成されている。また、本実施形態では、ベース基板2の下面に向かって漸次径が縮径した断面テーパ状のスルーホールを例に挙げて説明するが、この場合に限られず、ベース基板2を真っ直ぐに貫通するスルーホールでも構わない。いずれにしても、ベース基板2を貫通していれば良い。
なお、貫通電極32、33は、ペーストPに含まれる複数の金属微粒子P1が互いに接触し合っていることで、電気導通性が確保されている。また、本実施形態の金属微粒子P1は、銅等により細長い繊維状(非球形形状)に形成されている場合を例に挙げて説明する。
特に、貫通電極32、33は上述したように、ベース基板用ウエハ40の上面に対してほぼ面一な状態となっている。そのため、ベース基板用ウエハ40の上面にパターニングされた引き回し電極36、37は、間に隙間等を発生させることなく貫通電極32、33に対して密着した状態で接する。これにより、一方の引き回し電極36と一方の貫通電極32との導通性、並びに、他方の引き回し電極37と他方の貫通電極33との導通性を確実なものにすることができる。この時点で第2のウエハ作製工程が終了する。
特に、圧電振動片4は、バンプ接合されるので、ベース基板用ウエハ40の上面から浮いた状態で支持される。
ところで、陽極接合を行う際、ベース基板用ウエハ40に形成されたスルーホール30、31は、貫通電極32、33によって完全に塞がれているので、キャビティC内の気密がスルーホール30、31を通じて損なわれることがない。特に、貫通電極32、33を構成するペーストPは、スルーホール30、31の内面に強固に密着しているので、キャビティC内の気密を確実に維持することができる。
特に、この工程を行う場合も引き回し電極36、37の形成時と同様に、ベース基板用ウエハ40の下面に対して貫通電極32、33がほぼ面一な状態となっているので、パターニングされた外部電極38、39は、間に隙間等を発生させることなく貫通電極32、33に対して密着した状態で接する。これにより、外部電極38、39と貫通電極32、33との導通性を確実なものにすることができる。
なお、切断工程(S100)を行って個々の圧電振動子1に小片化した後に、微調工程(S90)を行う工程順序でも構わない。但し、上述したように、微調工程(S90)を先に行うことで、ウエハ体60の状態で微調を行うことができるので、複数の圧電振動子1をより効率よく微調することができる。よって、スループットの向上化を図ることができるので好ましい。
更に、研磨工程において、特に下面研磨工程の際、焼成時に減少するペーストPの体積に依存することなく、ベース基板用ウエハ40の厚みと保持孔30a、31aの深さとに基づいて研磨量を設定することができる。つまり、保持孔30a、31aの底に達するまで研磨すればよい。従って、ペーストPの状態を確認した上で研磨を行うといったことが必要なく、予め決められた量を研磨すればよい。これにより、研磨不足や過度の研磨を防ぐことができる。
加えて、上記本焼成後に研磨工程を実施することで、硬化したペーストPの表面とほぼ面一な状態にあるベース基板用ウエハ40の表面を、更に研磨することになる。これにより、ベース基板用ウエハ40の表面と硬化したペーストPの表面とをより面一な状態にすることができる。
次に、本発明に係る第2実施形態を、図22から図25を参照して説明する。なお、この第2実施形態においては、第1実施形態における構成要素と同一の部分については、同一の符号を付しその説明を省略する。
充填工程で埋め込まれたペーストPを仮焼成した後には、ペーストPの表面に凹みが生じる。そこで、この仮焼成を行った直後に、ベース基板用ウエハ40の両面をそれぞれ所定の厚み研磨する研磨工程を行う。即ち、図23に示すように、ベース基板用ウエハ40の上面を所定の厚みだけ研磨する上面研磨工程と、保持孔30a、31aの底に達するまでベース基板用ウエハ40の下面を研磨する下面研磨工程とを行う。これにより、図24に示すように、保持孔30a、31aがスルーホール30、31となる。加えて、ペーストPの凹んでいる部分の周囲を削りとることができるので、ベース基板用ウエハ40の表面と仮焼成後のペーストPの表面とがほぼ面一な状態となる。
これら上面研磨工程及び下面研磨工程を行うことで、研磨工程が終了する。
以下、本発明に係る第3実施形態を、図26から図44を参照して説明する。
本実施形態の圧電振動子101は、図26から図29に示すように、ベース基板102とリッド基板103とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片104が収納された表面実装型の圧電振動子101である。
なお、図29においては、図面を見易くするために後述する励振電極115、引き出し電極119、120、マウント電極116、117及び重り金属膜121の図示を省略している。
この圧電振動片104は、平行に配置された一対の振動腕部110、111と、一対の振動腕部110、111の基端側を一体的に固定する基部112と、一対の振動腕部110、111の外表面上に形成されて一対の振動腕部110、111を振動させる第1の励振電極113と第2の励振電極114とからなる励振電極115と、第1の励振電極113及び第2の励振電極114に電気的に接続されたマウント電極116、117とを有している。
また、本実施形態の圧電振動片104は、一対の振動腕部110、111の両主面上に、振動腕部110、111の長手方向に沿ってそれぞれ形成された溝部118を備えている。この溝部118は、振動腕部110、111の基端側から略中間付近まで形成されている。
なお、上述した励振電極115、マウント電極116、117及び引き出し電極119、120は、例えば、クロム(Cr)、ニッケル(Ni)、アルミニウム(Al)やチタン(Ti)等の導電性膜の被膜により形成されたものである。
このベース基板102には、ベース基板102を貫通する一対のスルーホール130、131が形成されている。この際、一対のスルーホール130、131は、キャビティC内に収まるように形成されている。より詳しく説明すると、本実施形態のスルーホール130、131は、マウントされた圧電振動片104の基部112側に一方のスルーホール130が位置し、振動腕部110、111の先端側に他方のスルーホール131が位置するように形成されている。
なお、貫通電極132、133は、ペーストPに含まれる複数の金属微粒子P1が互いに接触し合っていることで、電気導通性が確保されている。また、本実施形態の金属微粒子P1は、銅等により細長い繊維状(非球形形状)に形成されている場合を例に挙げて説明する。
続いて、充填したペーストPを所定の温度で焼成して、硬化させる焼成工程を行う(S134)。これにより、穴部130a、131aの内面にペーストPが強固に固着した状態となる。ところで、硬化したペーストPは、焼成時に図示しないペーストP内の有機物が蒸発してしまうので、図39に示すように、充填工程時に比べて体積が減少してしまう。そのため、ペーストPの表面には、どうしても凹みが生じてしまう。
これら上面研磨工程及び下面研磨工程を行うことで、貫通電極形成工程が終了する。
特に、貫通電極132、133は上述したように、表面に凹みがなく、ベース基板用ウエハ140の上面に対してほぼ面一な状態となっている。そのため、ベース基板用ウエハ140の上面にパターニングされた引き回し電極136、137は、間に隙間等を発生させることなく貫通電極132、133に対して密着した状態で接する。これにより、一方の引き回し電極136と一方の貫通電極132との導通性、並びに、他方の引き回し電極137と他方の貫通電極133との導通性を確実なものにすることができる。この時点で第2のウエハ作製工程が終了する。
特に、圧電振動片104は、バンプ接合されるので、ベース基板用ウエハ140の上面から浮いた状態で支持される。
特に、この工程を行う場合も引き回し電極136、137の形成時と同様に、ベース基板用ウエハ140の下面に対して貫通電極132、133がほぼ面一な状態となっているので、パターニングされた外部電極138、139は、間に隙間等を発生させることなく貫通電極132、133に対して密着した状態で接する。これにより、外部電極138、139と貫通電極132、133との導通性を確実なものにすることができる。
なお、切断工程(S190)を行って個々の圧電振動子101に小片化した後に、微調工程(S180)を行う工程順序でも構わない。但し、上述したように、微調工程(S180)を先に行うことで、ウエハ体160の状態で微調を行うことができるので、複数の圧電振動子101をより効率よく微調することができる。よって、スループットの向上化を図ることができるので好ましい。
また、ペーストPを利用した簡単な方法で貫通電極132、133を形成できるので、工程の簡素化を図ることができる。更に、ペーストPを埋め込む際に有底穴である穴部130a、131aを用いているので、ペーストPの埋め込み作業が容易であり、工程の簡素化を図ることができる。加えて、ペーストPを無駄に使用する恐れが無い。
そして、本実施形態の製造方法によれば、上記圧電振動子101を一度に複数製造することができるので、低コスト化を図ることができる。
以下、本発明に係る第4実施形態を、図45から図63を参照して説明する。
本実施形態の圧電振動子201は、図45から図48に示すように、ベース基板202とリッド基板203とで2層に積層された箱状に形成されており、内部のキャビティC内に圧電振動片204が収納された表面実装型の圧電振動子である。
なお、図48においては、図面を見易くするために後述する励振電極215、引き出し電極219、220、マウント電極216、217及び重り金属膜221の図示を省略している。
この圧電振動片204は、平行に配置された一対の振動腕部210、211と、一対の振動腕部210、211の基端側を一体的に固定する基部212と、一対の振動腕部210、211の外表面上に形成されて一対の振動腕部210、211を振動させる第1の励振電極213と第2の励振電極214とからなる励振電極215と、第1の励振電極213及び第2の励振電極214に電気的に接続されたマウント電極216、217とを有している。
なお、上述した励振電極215、マウント電極216、217及び引き出し電極219、220は、例えば、クロム(Cr)、ニッケル(Ni)、アルミニウム(Al)やチタン(Ti)等の導電性膜の被膜により形成されたものである。
このベース基板202には、ベース基板202を貫通する一対のスルーホール(貫通孔)230、231が形成されている。この際、一対のスルーホール230、231は、キャビティC内に収まるように形成されている。より詳しく説明すると、本実施形態のスルーホール230、231は、マウントされた圧電振動片204の基部212側に一方のスルーホール230が位置し、振動腕部210、211の先端側に他方のスルーホール231が位置するように形成されている。また、本実施形態では、ベース基板202の下面に向かって漸次径が縮径した断面テーパ状のスルーホールを例に挙げて説明するが、この場合に限られず、ベース基板202を真っ直ぐに貫通するスルーホールでも構わない。いずれにしても、ベース基板202を貫通していれば良い。
なお、貫通電極232、233は、ペーストPに含まれる複数の金属微粒子P1が互いに接触し合っていることで、電気導通性が確保されている。また、本実施形態の金属微粒子P1は、銅等により細長い繊維状(非球形形状)に形成されている場合を例に挙げて説明する。
続いて、充填したペーストPを所定の温度で焼成して、硬化させる焼成工程を行う(S235)。これにより、スルーホール230、231の内面にペーストPが強固に固着した状態となる。ところで、硬化したペーストPは、焼成時に図示しないペーストP内の有機物が蒸発してしまうので、図58に示すように、充填工程時に比べて体積が減少してしまう。そのため、ペーストPの表面には、どうしても凹みが生じてしまう。
よって、図60に示すように、ベース基板用ウエハ240の表面と、貫通電極232、233の表面とをほぼ面一の状態にすることができる。この研磨工程を行うことで、貫通電極形成工程が終了する。
特に、貫通電極232、233は上述したように、表面に凹みがなく、ベース基板用ウエハ240の上面に対してほぼ面一な状態となっている。そのため、ベース基板用ウエハ240の上面にパターニングされた引き回し電極236、237は、間に隙間等を発生させることなく貫通電極232、233に対して密着した状態で接する。これにより、一方の引き回し電極236と一方の貫通電極232との導通性、並びに、他方の引き回し電極237と他方の貫通電極233との導通性を確実なものにすることができる。この時点で第2のウエハ作製工程が終了する。
特に、圧電振動片204は、バンプ接合されるので、ベース基板用ウエハ240の上面から浮いた状態で支持される。
特に、この工程を行う場合も引き回し電極236、237の形成時と同様に、ベース基板用ウエハ240の下面に対して貫通電極232、233がほぼ面一な状態となっているので、パターニングされた外部電極238、239は、間に隙間等を発生させることなく貫通電極232、233に対して密着した状態で接する。これにより、外部電極238、239と貫通電極232、233との導通性を確実なものにすることができる。
なお、切断工程(290)を行って個々の圧電振動子201に小片化した後に、微調工程(S280)を行う工程順序でも構わない。但し、上述したように、微調工程(S280)を先に行うことで、ウエハ体260の状態で微調を行うことができるので、複数の圧電振動子201をより効率良く微調することができる。よって、スループットの向上化を図ることができるので好ましい。
また、本実施形態の製造方法によれば、上記圧電振動子201を一度に複数製造することができるので、低コスト化を図ることができる。
本実施形態の発振器500は、図64に示すように、圧電振動子1を、集積回路501に電気的に接続された発振子として構成したものである。この発振器500は、コンデンサ等の電子部品502が実装された基板503を備えている。基板503には、発振器用の上記集積回路501が実装されており、この集積回路501の近傍に、圧電振動子1が実装されている。これら電子部品502、集積回路501及び圧電振動子1は、図示しない配線パターンによってそれぞれ電気的に接続されている。なお、各構成部品は、図示しない樹脂によりモールドされている。
また、集積回路501の構成を、例えば、RTC(リアルタイムクロック)モジュール等を要求に応じて選択的に設定することで、時計用単機能発振器等の他、当該機器や外部機器の動作日や時刻を制御したり、時刻やカレンダー等を提供したりする機能を付加することができる。
なお、第1実施形態の圧電振動子1を備えている場合を例に挙げて説明したが、その他の実施形態の圧電振動子であっても同様の作用効果を奏することができる。
はじめに、本実施形態の携帯情報機器510は、例えば、携帯電話に代表されるものであり、従来技術における腕時計を発展、改良したものである。外観は腕時計に類似し、文字盤に相当する部分に液晶ディスプレイを配し、この画面上に現在の時刻等を表示させることができるものである。また、通信機として利用する場合には、手首から外し、バンドの内側部分に内蔵されたスピーカ及びマイクロフォンによって、従来技術の携帯電話と同様の通信を行うことが可能である。しかしながら、従来の携帯電話と比較して、格段に小型化及び軽量化されている。
無線部517は、音声データ等の各種データを、アンテナ525を介して基地局と送受信のやりとりを行う。音声処理部518は、無線部517又は増幅部520から入力された音声信号を符号化及び複号化する。増幅部520は、音声処理部518又は音声入出力部521から入力された信号を、所定のレベルまで増幅する。音声入出力部521は、スピーカやマイクロフォン等からなり、着信音や受話音声を拡声したり、音声を集音したりする。
なお、呼制御メモリ部524は、通信の発着呼制御に係るプログラムを格納する。また、電話番号入力部522は、例えば、0から9の番号キー及びその他のキーを備えており、これら番号キー等を押下することにより、通話先の電話番号等が入力される。
なお、通信部514の機能に係る部分の電源を、選択的に遮断することができる電源遮断部526を備えることで、通信部514の機能をより確実に停止することができる。
なお、第1実施形態の圧電振動子1を備えている場合を例に挙げて説明したが、その他の実施形態の圧電振動子であっても同様の作用効果を奏することができる。
本実施形態の電波時計530は、図66に示すように、フィルタ部531に電気的に接続された圧電振動子1を備えたものであり、時計情報を含む標準の電波を受信して、正確な時刻に自動修正して表示する機能を備えた時計である。
日本国内には、福島県(40kHz)と佐賀県(60kHz)とに、標準の電波を送信する送信所(送信局)があり、それぞれ標準電波を送信している。40kHz若しくは60kHzのような長波は、地表を伝播する性質と、電離層と地表とを反射しながら伝播する性質とを併せもつため、伝播範囲が広く、上述した2つの送信所で日本国内を全て網羅している。
アンテナ532は、40kHz若しくは60kHzの長波の標準電波を受信する。長波の標準電波は、タイムコードと呼ばれる時刻情報を、40kHz若しくは60kHzの搬送波にAM変調をかけたものである。受信された長波の標準電波は、アンプ533によって増幅され、複数の圧電振動子1を有するフィルタ部531によって濾波、同調される。
本実施形態における圧電振動子1は、上記搬送周波数と同一の40kHz及び60kHzの共振周波数を有する水晶振動子部538、539をそれぞれ備えている。
搬送波は、40kHz若しくは60kHzであるから、水晶振動子部538、539は、上述した音叉型の構造を持つ振動子が好適である。
なお、第1実施形態の圧電振動子1を備えている場合を例に挙げて説明したが、その他の実施形態の圧電振動子であっても同様の作用効果を奏することができる。
また、上記各実施形態では、音叉型の圧電振動片を例に挙げて説明したが、音叉型に限られるものではない。例えば、厚み滑り振動片としても構わない。
また、上記各実施形態では、圧電振動片をバンプ接合したが、バンプ接合に限定されるものではない。例えば、導電性接着剤により圧電振動片を接合しても構わない。但し、バンプ接合することで、圧電振動片をベース基板の上面から浮かすことができ、振動に必要な最低限の振動ギャップを自然と確保することができる。よって、バンプ接合することが好ましい。
また、上記各実施形態では、貫通電極を一対として説明したが、1つでも構わないし、3つ以上設けても構わない。
なお、金属微粒子P1を非球形とする場合には、例えば、図68Aに示す短冊状や、図68Bに示す波型状にしても構わないし、図68Cに示す断面星型や、図68Dに示す断面十字型でも構わない。
また、上記第1及び第2実施形態では、保持孔形成工程の際、保持孔を、ベース基板用ウエハの下面側が底になるような有底穴状に形成したが、他の形状でも構わない。例えばベース基板用ウエハの厚み方向に形成した貫通孔状でも構わない。但し、この場合は、下面研磨工程において、研磨量を、焼成時に減少するペーストの体積に依存して変化させる必要がある上に、充填工程において、ペーストの埋め込み作業が煩雑になるため、保持孔は有底状であることが好ましい。
Claims (19)
- 互いに接合されたベース基板とリッド基板との間に形成されたキャビティ内に圧電振動片が封止された圧電振動子を、ベース基板用ウエハとリッド基板用ウエハとを利用して一度に複数製造する方法であって、
前記リッド基板用ウエハに、両ウエハが重ね合わされたときに前記キャビティを形成するキャビティ用の凹部を複数形成する凹部形成工程と;
前記ベース基板用ウエハに、複数の金属微粒子を含んだペーストを利用して、ウエハを貫通する貫通電極を複数形成する貫通電極形成工程と;
前記ベース基板用ウエハの上面に、前記貫通電極に対して電気的に接続された引き回し電極を複数形成する引き回し電極形成工程と;
複数の前記圧電振動片を、前記引き回し電極を介して前記ベース基板用ウエハの上面に接合するマウント工程と;
前記ベース基板用ウエハと前記リッド基板用ウエハとを重ね合わせて、前記凹部と両ウエハとで囲まれる前記キャビティ内に圧電振動片を収納する重ね合わせ工程と;
前記ベース基板用ウエハと前記リッド基板用ウエハとを接合し、前記圧電振動片を前記キャビティ内に封止する接合工程と;
前記ベース基板用ウエハの下面に、前記貫通電極に電気的に接続された外部電極を複数形成する外部電極形成工程と;
接合された前記両ウエハを切断して、複数の前記圧電振動子に小片化する切断工程と;を備え、
前記貫通電極形成工程は、前記ペーストを保持するための保持孔を前記ベース基板用ウエハに複数形成する保持孔形成工程と;これら複数の保持孔内に前記ペーストを埋め込んで保持孔を塞ぐ充填工程と;埋め込んだペーストを仮焼成した後に本焼成して硬化させる焼成工程と;仮焼成或いは本焼成した後に、ベース基板用ウエハの両面をそれぞれ所定の厚み研磨する研磨工程と;を有し、
前記研磨工程を本焼成後に行う場合には、前記焼成工程時に、仮焼成で減少したペースト量に相当する新たなペーストを仮焼成後のペーストに補充して、ペースト全体を再度仮焼成した後に本焼成することを特徴とする圧電振動子の製造方法。 - 請求項1に記載の圧電振動子の製造方法であって、
前記充填工程の際、前記ペーストを脱泡処理した後に前記保持孔内に埋め込む。 - 請求項1に記載の圧電振動子の製造方法であって、
前記保持孔形成工程の際、前記ベース基板用ウエハの上面側から、前記保持孔を有底穴状に形成し;
前記研磨工程は、前記ベース基板用ウエハの上面を所定の厚みだけ研磨する上面研磨工程と;前記保持孔が貫通して硬化したペーストが少なくとも露出するまで前記ベース基板用ウエハの下面を研磨する下面研磨工程と;を備える。 - 互いに接合されたベース基板とリッド基板との間に形成されたキャビティ内に圧電振動片が封止された圧電振動子を、ベース基板用ウエハとリッド基板用ウエハとを利用して一度に複数製造する方法であって、
前記リッド基板用ウエハに、両ウエハが重ね合わされたときに前記キャビティを形成するキャビティ用の凹部を複数形成する凹部形成工程と;
前記ベース基板用ウエハに、複数の金属微粒子を含んだペーストを利用して、ウエハを貫通する貫通電極を複数形成する貫通電極形成工程と;
前記ベース基板用ウエハの上面に、前記貫通電極に対して電気的に接続された引き回し電極を複数形成する引き回し電極形成工程と;
複数の前記圧電振動片を、前記引き回し電極を介して前記ベース基板用ウエハの上面に接合するマウント工程と;
前記ベース基板用ウエハと前記リッド基板用ウエハとを重ね合わせて、前記凹部と両ウエハとで囲まれる前記キャビティ内に圧電振動片を収納する重ね合わせ工程と;
前記ベース基板用ウエハと前記リッド基板用ウエハとを接合し、前記圧電振動片を前記キャビティ内に封止する接合工程と;
前記ベース基板用ウエハの下面に、前記貫通電極に電気的に接続された外部電極を複数形成する外部電極形成工程と;
接合された前記両ウエハを切断して、複数の前記圧電振動子に小片化する切断工程と;を備え、
前記貫通電極形成工程は、前記ベース基板用ウエハの上面に穴部を複数形成する穴部形成工程と;これら複数の穴部内に前記ペーストを埋め込んで穴部を塞ぐ充填工程と、埋め込んだペーストを所定の温度で焼成して硬化させる焼成工程と;焼成後にベース基板用ウエハの上面を所定の厚みだけ研磨する上面研磨工程と;穴部が貫通して硬化したペーストが少なくとも露出するまで、焼成後にベース基板用ウエハの下面を研磨する下面研磨工程と;を備えていることを特徴とする圧電振動子の製造方法。 - 請求項4に記載の圧電振動子の製造方法であって、
前記充填工程の際、前記ペーストを脱泡処理した後に前記穴部内に埋め込む。 - 互いに接合されたベース基板とリッド基板との間に形成されたキャビティ内に圧電振動片が封止された圧電振動子を、ベース基板用ウエハとリッド基板用ウエハとを利用して一度に複数製造する方法であって、
前記リッド基板用ウエハに、両ウエハが重ね合わされたときに前記キャビティを形成するキャビティ用の凹部を複数形成する凹部形成工程と;
前記ベース基板用ウエハに、複数の金属微粒子を含んだペーストを利用して、ウエハを貫通する貫通電極を複数形成する貫通電極形成工程と;
前記ベース基板用ウエハの上面に、前記貫通電極に対して電気的に接続された引き回し電極を複数形成する引き回し電極形成工程と;
複数の前記圧電振動片を、前記引き回し電極を介して前記ベース基板用ウエハの上面に接合するマウント工程と;
前記ベース基板用ウエハと前記リッド基板用ウエハとを重ね合わせて、前記凹部と両ウエハとで囲まれる前記キャビティ内に圧電振動片を収納する重ね合わせ工程と;
前記ベース基板用ウエハと前記リッド基板用ウエハとを接合し、前記圧電振動片を前記キャビティ内に封止する接合工程と;
前記ベース基板用ウエハの下面に、前記貫通電極に電気的に接続された外部電極を複数形成する外部電極形成工程と;
接合された前記両ウエハを切断して、複数の前記圧電振動子に小片化する切断工程と;を備え、
前記貫通電極形成工程は、前記ベース基板用ウエハにこのウエハを貫通する貫通孔を複数形成する貫通孔形成工程と;これら複数の貫通孔内に前記ペーストを埋め込んで貫通孔を塞ぐ充填工程と;埋め込んだペーストを所定の温度で焼成して硬化させる焼成工程と;焼成後にベース基板用ウエハの両面をそれぞれ所定の厚みだけ研磨する研磨工程と;を備えていることを特徴とする圧電振動子の製造方法。 - 請求項6に記載の圧電振動子の製造方法であって、
前記充填工程の際、前記ペーストを脱泡処理した後に前記貫通孔内に埋め込む。 - 請求項1から7のいずれか1項に記載の圧電振動子の製造方法であって、
前記マウント工程前に、前記ベース基板用ウエハと前記リッド基板用ウエハとを重ね合わせたときに、前記凹部の周囲を囲む接合膜をベース基板用ウエハの上面に形成する接合膜形成工程を備え;
前記接合工程の際、前記接合膜を介して前記両ウエハを陽極接合する。 - 請求項1から7のいずれか1項に記載の圧電振動子の製造方法であって、
前記マウント工程の際、導電性のバンプを利用して前記圧電振動片をバンプ接合する。 - 請求項1から7のいずれか1項に記載の圧電振動子の製造方法であって、
前記充填工程の際、非球形形状の金属微粒子を含んだペーストを埋め込む。 - 請求項1から7のいずれか1項に記載の圧電振動子の製造方法であって、
前記充填工程の際、前記ベース基板用ウエアと熱膨張率が略同一の粒体が混合されたペーストを埋め込む。 - 両面が研磨加工されたベース基板と;
キャビティ用の凹部が形成され、凹部を前記ベース基板に対向させた状態でベース基板に接合されたリッド基板と;
前記凹部を利用して前記ベース基板と前記リッド基板との間に形成されたキャビティ内に収納された状態で、ベース基板の上面に接合された圧電振動片と;
前記ベース基板の下面に形成された外部電極と;
前記ベース基板を貫通するように形成され、前記キャビティ内の気密を維持すると共に、前記外部電極に対して電気的に接続された貫通電極と;
前記ベース基板の上面に形成され、接合された前記圧電振動片に対して前記貫通電極を電気的に接続させる引き回し電極と;を備え、
前記貫通電極は、複数の金属微粒子を含んだペーストの硬化により形成されている;ことを特徴とする圧電振動子。 - 請求項12に記載の圧電振動子であって、
前記ベース基板及び前記リッド基板は、前記凹部の周囲を囲むように両基板の間に形成された接合膜を介して陽極接合されている。 - 請求項12に記載の圧電振動子であって、
前記圧電振動片は、導電性のバンプによりバンプ接合されている。 - 請求項12に記載の圧電振動子であって、
前記金属微粒子は、非球形形状とされている。 - 請求項12に記載の圧電振動子であって、
前記ペーストには、前記ベース基板と熱膨張率が略同一の粒体が混合されている。 - 請求項12から16のいずれか1項に記載の圧電振動子が、発振子として集積回路に電気的に接続されている;ことを特徴とする発振器。
- 請求項12から16のいずれか1項に記載の圧電振動子が、計時部に電気的に接続されている;ことを特徴とする電子機器。
- 請求項12から16のいずれか1項に記載の圧電振動子が、フィルタ部に電気的に接続されている;ことを特徴とする電波時計。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009554196A JPWO2009104314A1 (ja) | 2008-02-18 | 2008-11-18 | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 |
CN2008801288305A CN102007690A (zh) | 2008-02-18 | 2008-11-18 | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 |
TW098104981A TW201010272A (en) | 2008-02-18 | 2009-02-17 | Method for fabricating piezoeledctric vibrator, piezoeledctric vibrator, oscillator, electronic apparatus and radio-controlled clock |
US12/856,365 US20100308928A1 (en) | 2008-02-18 | 2010-08-13 | Piezoelectric vibrator manufacturing method, piezoelectric vibrator, oscillator, electronic device, and radio-controlled watch |
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-035508 | 2008-02-18 | ||
JP2008-036419 | 2008-02-18 | ||
JP2008035508 | 2008-02-18 | ||
JP2008036419 | 2008-02-18 | ||
JP2008035512 | 2008-02-18 | ||
JP2008-035512 | 2008-02-18 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/856,365 Continuation US20100308928A1 (en) | 2008-02-18 | 2010-08-13 | Piezoelectric vibrator manufacturing method, piezoelectric vibrator, oscillator, electronic device, and radio-controlled watch |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009104314A1 true WO2009104314A1 (ja) | 2009-08-27 |
Family
ID=40985208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/070941 WO2009104314A1 (ja) | 2008-02-18 | 2008-11-18 | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20100308928A1 (ja) |
JP (1) | JPWO2009104314A1 (ja) |
WO (1) | WO2009104314A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013157386A (ja) * | 2012-01-27 | 2013-08-15 | Seiko Epson Corp | ベース基板、電子デバイス、ベース基板の製造方法、及び電子デバイスの製造方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101946405A (zh) * | 2008-02-18 | 2011-01-12 | 精工电子有限公司 | 压电振动器的制造方法、压电振动器、振荡器、电子设备及电波钟 |
JP5827088B2 (ja) * | 2011-09-27 | 2015-12-02 | セイコーインスツル株式会社 | 電子部品の端子接続構造、パッケージ、圧電振動子、発振器、電子機器および電波時計 |
JP6155551B2 (ja) * | 2012-04-10 | 2017-07-05 | セイコーエプソン株式会社 | 電子デバイス、電子機器および電子デバイスの製造方法 |
JP6150249B2 (ja) * | 2013-02-25 | 2017-06-21 | 京セラ株式会社 | 電子デバイスのガラス封止方法 |
JP6163151B2 (ja) * | 2014-12-25 | 2017-07-12 | 京セラ株式会社 | 電子機器 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154403A (ja) * | 1984-01-24 | 1985-08-14 | 東芝ケミカル株式会社 | 導電性ペ−スト |
JPH07328315A (ja) * | 1994-06-06 | 1995-12-19 | Murata Mfg Co Ltd | 脱泡装置 |
JP2004158705A (ja) * | 2002-11-07 | 2004-06-03 | Fujikura Ltd | 微細孔への金属充填方法及びその方法により形成された金属が充填した微細孔を備えたワーク |
JP2005353420A (ja) * | 2004-06-10 | 2005-12-22 | Sony Corp | 導電性材料、導電性材料担持シート、導電性材料の充填方法及び装置 |
JP2007013628A (ja) * | 2005-06-30 | 2007-01-18 | Kyocera Kinseki Corp | 圧電振動子の製造方法及び圧電振動子 |
JP2007267101A (ja) * | 2006-03-29 | 2007-10-11 | Epson Toyocom Corp | 圧電デバイスとその製造方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005243689A (ja) * | 2004-02-24 | 2005-09-08 | Canon Inc | 半導体チップの製造方法および半導体装置 |
-
2008
- 2008-11-18 JP JP2009554196A patent/JPWO2009104314A1/ja not_active Withdrawn
- 2008-11-18 WO PCT/JP2008/070941 patent/WO2009104314A1/ja active Application Filing
-
2010
- 2010-08-13 US US12/856,365 patent/US20100308928A1/en not_active Abandoned
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60154403A (ja) * | 1984-01-24 | 1985-08-14 | 東芝ケミカル株式会社 | 導電性ペ−スト |
JPH07328315A (ja) * | 1994-06-06 | 1995-12-19 | Murata Mfg Co Ltd | 脱泡装置 |
JP2004158705A (ja) * | 2002-11-07 | 2004-06-03 | Fujikura Ltd | 微細孔への金属充填方法及びその方法により形成された金属が充填した微細孔を備えたワーク |
JP2005353420A (ja) * | 2004-06-10 | 2005-12-22 | Sony Corp | 導電性材料、導電性材料担持シート、導電性材料の充填方法及び装置 |
JP2007013628A (ja) * | 2005-06-30 | 2007-01-18 | Kyocera Kinseki Corp | 圧電振動子の製造方法及び圧電振動子 |
JP2007267101A (ja) * | 2006-03-29 | 2007-10-11 | Epson Toyocom Corp | 圧電デバイスとその製造方法 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013157386A (ja) * | 2012-01-27 | 2013-08-15 | Seiko Epson Corp | ベース基板、電子デバイス、ベース基板の製造方法、及び電子デバイスの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20100308928A1 (en) | 2010-12-09 |
JPWO2009104314A1 (ja) | 2011-06-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5091261B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5135510B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5065494B2 (ja) | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 | |
JP5147868B2 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP5180975B2 (ja) | 圧電振動子の製造方法および圧電振動子 | |
JP5091262B2 (ja) | 圧電振動子の製造方法、固定治具、並びに圧電振動子、発振器、電子機器及び電波時計 | |
WO2009157305A1 (ja) | 圧電振動子の製造方法、並びに圧電振動子、発振器、電子機器及び電波時計 | |
JP5189378B2 (ja) | 圧電振動子の製造方法 | |
WO2010023727A1 (ja) | 圧電振動子、発振器、電子機器及び電波時計並びに圧電振動子の製造方法 | |
JP5258958B2 (ja) | 圧電振動子の製造方法及び基板の製造方法 | |
JP2011190509A (ja) | マスク材、圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
WO2009104314A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP2011160350A (ja) | 圧電振動片、圧電振動子、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP2012199735A (ja) | 圧電振動子の製造方法、圧電振動子、該圧電振動子を有する発振器、電子機器及び電波時計 | |
WO2009104328A1 (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP2012169865A (ja) | 圧電振動片、圧電振動子、発振器、電子機器、及び電波時計 | |
JP5128671B2 (ja) | 圧電振動子、発振器、電子機器及び電波時計、並びに圧電振動子の製造方法 | |
WO2010097901A1 (ja) | 陽極接合方法、パッケージの製造方法、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP2011049664A (ja) | パッケージの製造方法、圧電振動子の製造方法、発振器、電子機器および電波時計 | |
JP5258957B2 (ja) | 圧電振動子の製造方法及び基板の製造方法 | |
JP2011041069A (ja) | パッケージの製造方法、圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP2009194789A (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器及び電波時計 | |
JP2011211441A (ja) | 圧電振動子の製造方法、圧電振動子、発振器、電子機器、および電波時計 | |
JP2011049993A (ja) | パッケージの製造方法、圧電振動子の製造方法、圧電振動子、発振器、電子機器および電波時計 | |
JP2011205032A (ja) | パッケージの製造方法、圧電振動子、発振器、電子機器及び電波時計 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880128830.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08872551 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2009554196 Country of ref document: JP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
WPC | Withdrawal of priority claims after completion of the technical preparations for international publication |
Ref document number: 2008-035512 Country of ref document: JP Date of ref document: 20100806 Free format text: WITHDRAWN AFTER TECHNICAL PREPARATION FINISHED |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08872551 Country of ref document: EP Kind code of ref document: A1 |