TW201010272A

TW201010272A - Method for fabricating piezoeledctric vibrator, piezoeledctric vibrator, oscillator, electronic apparatus and radio-controlled clock

Info

Publication number: TW201010272A
Application number: TW098104981A
Authority: TW
Inventors: Kiyoshi Aratake; Masashi Numata
Original assignee: Seiko Instr Inc
Priority date: 2008-02-18
Filing date: 2009-02-17
Publication date: 2010-03-01

Abstract

A piezoelectric vibrator comprises a base substrate having polished facing sides; a lid substrate, which has a recess for cavity and is bonded to the base substrate so that the recess faces the base substrate; a piezoelectric vibrating reed bonded to the upper surface of the base substrate in a state where the piezoelectric vibrating read is contained in the cavity formed between the base substrate and the lid substrate by utilizing the recess; an external electrode formed on the lower surface of the base substrate; a through electrode, which is formed to penetrate the base substrate, maintains airtightness in the cavity and is connected electrically with the external electrode; and a connecting electrode, which is formed on the upper surface of the base substrate for connecting the through electrode electrically with the piezoelectric vibrating-reed thus bonded. The through electrode is formed by hardening a paste containing a plurality of kinds of metal fine particles.

Description

201010272 六、發明說明【發明所屬之技術領域】本發明是有關在所被接合的2片基板之間 • 內密封有壓電振動片之表面安裝型（SMD )的 „ ，製造此壓電振動子之壓電振動子的製造方法振動子的振盪器、電子機器及電波時鐘。本申請案是以日本特願2008-35508號、 φ 36419號、特願2〇〇8_35511號作爲基礎案，取【先前技術】近年來，在行動電話或攜帶型資訊終端機水晶等的壓電振動子被使用作爲時刻源或控制序源、參考訊號源等。此種的壓電振動子已知，其一有表面安裝型的壓電振動子爲人所知。振動子，一般有3層構造型態者爲人所知，其 φ 板與蓋體基板來從上下夾入形成有壓電振動片 * 而接合者。此情況，壓電振動子是被收納於基體基板之間所形成的空腔（密閉室）內。又，述3層構造型態，2層構造型態者也被開發。此型態的壓電振動子是在基底基板與蓋體合下形成2層構造，在形成於兩基板之間的空壓電振動片。此2層構造型態的壓電振動子與作比較，可謀求薄型化等的點較佳，適於使用層構造型態的壓電振動子之一，有利用形成可形成的空腔壓電振動子，具有壓電特願2008- 入其內容。器中，利用訊號等的時有各式各樣此種的壓電係以基底基的壓電基板底基板與蓋近年來非上基板直接接腔內收納有 3層構造者。如此的2 貫通基底基 -5- 201010272 板的導電構件來使壓電振動片與形成於基底基板的外部電極導通的壓電振動子爲人所知（參照專利文獻1及專利文獻2)。此壓電振動子600，如圖70及圖71所示，具備：經由接合膜607來互相陽極接合的基底基板601及蓋體基板 602、及在形成於兩基板601、602之間的空腔C內被密封的壓電振動片603。壓電振動片603是例如音叉型的振動片，在空腔C內於基底基板601的上面經由導電性黏合劑E來安裝。基底基板601及蓋體基板602是例如由陶瓷或玻璃等所構成的絕緣基板。兩基板601、602中在基底基板601是形成有貫通此基底基板601的通孔604。然後，在通孔604內是以能夠阻塞此通孔604的方式埋入有導電構件605。此導電構件60 5是被電性連接至基底基板601的下面所形成的外部電極606，並電性連接至空腔c內所安裝的壓電振動片 603 。 _ 〔專利文獻1〕特開2002-124845號公報 ’ 〔專利文獻2〕特開2006-279872號公報【發明內容】 (發明所欲解決的課題）可是’在上述2層構造型態的壓電振動子中，導電構件605是背負阻塞通孔604而維持空腔C內的氣密，且使壓電振動片603與外部電極606導通的兩大任務。特別是 -6- 201010272 若與通孔6 04的密合不夠充分，則恐有損空腔C內的氣密之虞，且若與導電性黏合劑E或外部電極6 06的接觸不夠充分，則會導致壓電振動片603的作動不良。因此，爲了 • 消除如此的不良情況，必須在通孔604的內面牢固地密合 . 的狀態下完全阻塞此通孔604，且在表面無凹陷等的狀態下形成導電構件605。然而，雖在專利文獻1及專利文獻2中記載有以導電 ^ 膏（Ag膏（Ag Paste)或Au-Sn膏等）來形成導電構件 6 05的點，但實際上有關如何地形成等具體的製造方法未有任何的記載。一般在使用導電膏時，需要燒結而使硬化。亦即，在通孔604內埋入導電膏後，必須進行燒結而使硬化。可是，一旦進行燒結，則含於導電膏的有機物會藉蒸發而消失，因此通常燒結後的體積會比燒結前減少（例如導電膏爲使用Ag膏時是體積大槪減少20%程度）。因此，即使利 φ 用導電膏來形成導電構件605也恐有在表面發生凹陷，或 * 嚴重的情況是貫通孔開鑿於中心。其結果，有可能損及空腔C內的氣密，或有損壓電振動片603與外部電極606的導通性。本發明是考量如此的情事而硏發者，其目的是在於提供一種確實地維持空腔內的氣密的同時，確保壓電振動片與外部電極的安定導通性之高品質的2層構造式表面安裝型的壓電振動子。並且，提供一次效率佳地製造該壓電振動子之壓電振動子的製造方法、具有壓電振動子的振盪器 201010272 、電子機器及電波時鐘。 (用以解決課題的手段）本發明爲了解決上述課題達成目的，而提供以下的手 - 段。、 (1)本發明之壓電振動子的製造方法，係利用基底基板用晶圓及蓋體基板用晶圓來一次製造複數個在互相接合的基底基板與蓋體基板之間所形成的空腔內密封壓電振 @ 動片的壓電振動子之方法，其特徵係具備：凹部形成工程，其係於上述蓋體基板用晶圓，形成複數個在叠合兩晶圓時形成上述空腔的空腔用凹部；貫通電極形成工程，其係於上述基底基板用晶圓，利用含複數的金屬微粒子的膏來形成複數個貫通晶圓的貫通電極；繞拉電極形成工程，其係於上述基底基板用晶圓的上面，形成複數個對上述貫通電極電性連接的繞拉電極； ό 安裝工程，其係將複數的上述壓電振動片經由上述繞 · 拉電極來接合於上述基底基板用晶圓的上面；疊合工程，其係叠合上述基底基板用晶圓與上述蓋體基板用晶圓，在以上述凹部及兩晶圓所包圍的上述空腔內收納上述壓電振動片；接合工程，其係接合上述基底基板用晶圓及上述蓋體基板用晶圓，將上述壓電振動片密封於上述空腔內；外部電極形成工程，其係於上述基底基板用晶圓的下 -8- 201010272 面，形成複數個電性連接至上述貫通電極的外部^ 切斷工程，其係切斷所被接合的上述兩晶圓化成複數的上述壓電振動子，又，上述貫通電極形成工程係具有： . 保持孔形成工程，其係於上述基底基板用晶數個用以保持上述膏的保持孔；充塡工程，其係於該等複數的保持孔內埋入 Φ 阻塞保持孔；燒結工程，其係暫時燒結所埋入的膏後正式硬化；及硏磨工程，其係於暫時燒結或正式燒結後，底基板用晶圓的兩面硏磨預定的厚度，並且，在正式燒結後進行上述硏磨工程時，燒結工程時，將相當於在暫時燒結減少的膏量之充於暫時燒結後的膏，而將胥全體再度暫時燒結 • 式燒結。 * 若根據上述壓電振動子的製造方法，則首先形成工程，其係於蓋體基板用晶圓形成複數個空部。該等凹部是在之後疊合兩晶圓時，形成空腔以和此工程同時或前後的時序，進行在基底基板成複數個貫通電極的貫通電極形成工程。此時，合兩晶圓時，以能夠收於蓋體基板用晶圓所形成之方式形成複數個貫通電極。此貫通電極形成工程是依硏磨基底基板用晶 ΐ極；及，而小片圓形成複上述膏而燒結而使分別將基係於上述新的膏補後進行正進行凹部腔用的凹的凹部。用晶圓形在之後疊的凹部內圓的硏磨 -9- 201010272 工程的時序而大槪分成兩種的作業順序。在此，首先說明有關在正式燒結含複數個金屬微粒子的膏之後進行硏磨工程的情形。首先，進行保持孔形成工程，其係於基底基板用晶圓形成複數個用以保持膏的保持孔。接著，進行充塡工程， _ 其係於該等複數的保持孔內無間隙地埋入膏而阻塞保持孔。接著，進行燒結工程，其係暫時燒結充塡的膏之後正式燒結而使硬化。具體而言，首先，暫時燒結所被埋入的膏 @ 。可是，藉由暫時燒結而硬化的膏，因爲在暫時燒結時膏內的大部分的有機物會蒸發，所以相較於充塡工程時，體積會減少。因此，在膏的表面，無論如何會產生凹陷。於是，將相當於暫時燒結時減少的膏量之新的膏補充至暫時燒結後的膏。藉此，在凹陷的部分會被充塡新的膏，因此表面會形成平坦。然後，在膏的補充終了後，爲了防止所被補充的膏內部的有機物在正式燒結時急劇地蒸發，而再度暫時燒結膏 # 全體。在此暫時燒結終了後，進行膏全體的正式燒結。藉 · 此，在充塡工程所被埋入的膏及新補充的膏會完全硬化而形成一體化的狀態，且形成牢固地黏著於保持孔的內面之狀態。藉由進行膏的暫時燒結及正式燒結，完成燒結工程〇可是，被正式燒結的膏內，在充塡工程被埋入的膏是在最初的暫時燒結時已經大部分的有機物蒸發，因此膏補充後的暫時燒結及正式燒結時體積幾乎不會減少。另一方 -10- 201010272 面，最初的暫時燒結後所被補充的新的膏，雖會因爲膏補充後的暫時燒結及正式燒結而體積減少，但膏的量本身與保持孔內的膏的全體量作比較，極微量。因此，在暫時燒 .· 結及正式燒結新的膏之下減少的體積給予全體的膏的體積 . 的影響，可無視程度的小。因此，即使考慮新補充的膏的體積減少，在正式燒結硬化的膏的表面也不會有大的凹陷。亦即，基底基板用晶圓的表面與硬化的膏的表面，幾乎 Φ 形成面一致的狀態。然後，在燒結工程後，進行硏磨工程，其係將基底基板用晶圓的兩面分別硏磨預定的厚度。藉由進行此工程，連藉由正式燒結而硬化的膏的兩面也可同時硏磨。因此，亦可消去膏的些微凹陷的部分的周圍。亦即，可使硬化的膏的表面更爲平坦。藉此，基底基板用晶圓的表面與硬化的膏的表面會形成更面一致的狀態。藉由進行此硏磨工程，完成在正式燒結後進行硏磨工程時的貫通電極形成工程。另外，在含於膏的複數個金屬微粒子彼此相接觸之下， * 可確保貫通電極的電氣導通性。並且，在上述的貫通電極形成工程中，因爲在硏磨工程的硏磨量極些微，所以可縮短硏磨工程所要的時間。另一方面，繼續說明有關在正式燒結前進行硏磨工程時的貫通電極形成工程。至暫時燒結在充塡工程所被埋入的膏爲止是與上述的情況同樣地進行。在暫時燒結在充塡工程所被埋入的膏之後，如上述般，會在膏的表面產生凹陷。於是，在進行此 -11 - 201010272 暫時燒結後，緊接著進行將基底基板用晶圓的兩面分別硏磨預定的厚度之硏磨工程。藉此，可削去膏的凹陷部分的周圍，因此基底基板用晶圓的表面與暫時燒結後的膏的表面會幾乎形成面一致的狀態。 · 並且，此暫時燒結的膏的體積的減少量，相較於不暫 - 時燒結而1次正式燒結時小。因此，隨暫時燒結而產生的膏表面的凹陷，要比不暫時燒結同量的膏而1次正式燒結時產生的凹陷更小。因此，藉由在暫時燒結膏後緊接著進 @ 行硏磨工程，可壓低硏磨量，特別是可縮短上面硏磨所要的時間。然後，在進行硏磨工程後，藉由進行正式燒結來使膏完全硬化。藉此，膏會形成牢固地黏著於保持孔的內面之狀態，膏是具有作爲貫通電極的機能。又，因爲在暫時燒結時膏內的大部分的有機物已蒸發，所以正式燒結的體積的減少極些微。因此，基底基板用晶圓的表面與硬化的育的表面是維持與進行正式燒結前幾乎同樣面一致的狀態。 · 藉由此正式燒結，完成貫通電極形成工程。 · 以上爲本發明的貫通電極形成工程，但如上述般，無論以哪個的時序來實施硏磨工程，基底基板用晶圓的表面與硬化的膏的表面皆會幾乎形成面一致的狀態。其次，進行繞拉電極形成工程，其係於基底基板用晶圓的上面使導電性材料圖案化，而形成複數個對貫通電極電性連接的繞拉電極。此時，在之後疊合兩晶圓時，以能夠收於蓋體基板用晶圓所形成的凹部內之方式形成繞拉電 -12- 201010272 極。特別是貫通電極如上述般對基底基板用晶乎形成面一致的狀態。因此，在基底基板用晶 .· 圖案化的繞拉電極是之間不使產生間隙等，以 . 密合的狀態連接。藉此，可使繞拉電極與貫通性成爲確實者。其次，進行安裝工程，其係將複數的壓電 Φ 繞拉電極來接合於基底基板用晶圓的上面。藉合的各壓電振動片是形成經由繞拉電極來對貫的狀態。安裝終了後，進行疊合基底基板用晶板用晶圓的疊合工程。藉此，所被接合的複數片是形成被收納於以凹部及兩晶圓所包圍的空。其次，進行接合疊合的兩晶圓的接合工程。兩晶圓會牢固地密合，所以可將壓電振動片密〇其次，進行外部電極形成工程，其係於基 • 圓的下面使導電性材料圖案化，而形成複數個貫通電極的外部電極。此情況也是與繞拉電極樣，對基底基板用晶圓的下面，貫通電極幾乎致的狀態，因此，被圖案化的外部電極是之間發生，以對貫通電極密合的狀態連接。藉此，極與貫通電極的導通性成爲確實者。藉由此工外部電極來使密封於空腔內的壓電振動片作動最後，進行切斷工程，其係切斷所被接合圓的上面幾圓的上面被對貫通電極電極的導通振動片經由此，所被接通電極導通圓與蓋體基個壓電振動腔內之狀態藉此，因爲封於空腔內底基板用晶電性連接至的形成時同是形成面一不使間隙等可使外部電程，可利用〇的基底基板 -13- 201010272 用晶圓及蓋體基板用晶圓，而小片化成複數的壓電振動子〇其結果，可一次製造複數個2層構造式表面安裝型的壓電振動子，其係於被互相接合的基底基板與蓋體基板之間形成的空腔內密封壓電振動片。 . 特別是可在對基底基板幾乎面一致的狀態下形成貫通電極，因此可使貫通電極對繞拉電極及外部電極確實地密合。其結果，可確保壓電振動片與外部電極的安定導通性 @ ，可提升作動性能的可靠度而謀求高性能化。又，由於有關空腔內的氣密也可確實地維持，因此此點也可謀求高品質化。又，由於可藉由利用膏的簡單方法來形成貫通電極，因此可謀求工程的簡素化。 (2) 上述充塡工程時，可將上述膏脫泡處理後埋入上述保持孔內。此情況，因爲事前將膏脫泡處理，所以可充塡極力未含氣泡等的膏。因此，即使進行燒結工程，還是可儘可能 0 抑制膏的體積減少。因此，可減少之後進行的硏磨量，削 · 減硏磨所花費的時間，進而能夠效率佳地製造壓電振動子〇 (3) 上述保持孔形成工程時，從上述基底基板用晶圓的上面側，將上述保持孔形成有底穴狀，上述硏磨工程可具備：上面硏磨工程，其係將上述基底基板用晶圓的上面只硏磨預定的厚度；及 -14- 201010272 下面硏磨工程，其係將上述基底基板用晶圓的下面硏磨至上述保持孔貫通而硬化的膏至少露出爲止。此情況，在保持孔形成工程時，從基底基板用晶圓的 • 上面側，將保持孔形成有底穴狀。藉此，在充塡工程中， . 膏的埋入作業容易，可謀求工程的簡素化。加上，無浪費使用膏之虞。又，硏磨工程是具備上面硏磨工程及下面硏磨工程。 Φ 特別是在下面硏磨工程中，是不依燒結時減少的膏的體積，而是可根據基底基板用晶圓的厚度及保持孔的深度來設定硏磨量。因此，有關下面硏磨工程，是不必確認膏的狀態後進行硏磨，只要硏磨預先決定的量即可。因此，可防止硏磨不足或過度的硏磨。 (4)又，本發明之壓電振動子的製造方法，係利用基底基板用晶圓及蓋體基板用晶圓來一次製造複數個在互相接合的基底基板與蓋體基板之間所形成的空腔內密封壓 • 電振動片的壓電振動子之方法，其特徵係具備： * 凹部形成工程，其係於上述蓋體基板用晶圓，形成複數個在疊合兩晶圓時形成上述空腔的空腔用凹部；貫通電極形成工程，其係於上述基底基板用晶圓，利用含複數的金屬微粒子的膏來形成複數個貫通晶圓的貫通電極；繞拉電極形成工程，其係於上述基底基板用晶圓的上面，形成複數個對上述貫通電極電性連接的繞拉電極；安裝工程，其係將複數的上述壓電振動片經由上述繞 -15- 201010272 拉電極來接合於上述基底基板用晶圓的上面：疊合工程，其係疊合上述基底基板用晶圓與上述蓋體基板用晶圓，在以上述凹部及兩晶圓所包圍的上述空腔內收納上述壓電振動片； ·. 接合工程，其係接合上述基底基板用晶圓及上述蓋體 . 基板用晶圓，將上述壓電振動片密封於上述空腔內；外部電極形成工程，其係於上述基底基板用晶圓的下面，形成複數個電性連接至上述貫通電極的外部電極；及 @ 切斷工程，其係切斷所被接合的上述兩晶圓，而小片化成複數的上述壓電振動子，又，上述貫通電極形成工程係具有：穴部形成工程，其係於上述基底基板用晶圓的上面形成複數個穴部；充塡工程，其係於該等複數的穴部內埋入上述膏而阻塞保持孔；燒結工程，其係以預定的溫度來燒結所埋入的膏而使 φ 硬化； - 上面硏磨工程’其係於燒結後將基底基板用晶圓的上面只硏磨預定的厚度；及下面硏磨工程’其係於燒結後將基底基板用晶圓的下面硏磨至穴部貫通而硬化的膏至少露出爲止。若根據上述壓電振動子的製造方法，則首先進行凹部形成工程，其係於蓋體基板用晶圓形成複數個空腔用的凹部。該等凹部是在之後疊合雨晶圓時，形成空腔的凹部。 -16- 201010272 以和此工程同時或前後的時序，進行在基底基板用晶圓形成複數個貫通電極的貫通電極形成工程。此時，在之後疊合兩晶圓時，以能夠收於蓋體基板用晶圓所形成的凹部內之方式形成複數個貫通電極。 • 若詳細說明有關此貫通電極形成工程，則首先進行穴部形成工程，其係於基底基板用晶圓的上面形成複數個穴部。接著，進行充塡工程，其係於該等複數的穴部內無間 φ 隙地埋入含金屬微粒子的膏而阻塞穴部。接著，進行燒結工程，其係以預定的溫度來燒結充塡的胥而使硬化。藉此，膏會形成牢固地黏著於穴部的內面之狀態。可是，硬化的膏是在燒結時胥內的有機物會蒸發，因此相較於充塡工程時，體積會減少。因此，在膏的表面，無論如何也會產生凹陷。於是，在燒結後，進行上面硏磨工程，其係將基底基板用晶圓的上面只硏磨預定的厚度。藉由進行此工程，在基底基板用晶圓的上面，連藉由燒結 • 而硬化的膏也可同時硏磨，所以可削去凹陷的部分的周圍 ' 。亦即，可使硬化的膏的表面平坦化。因此，在基底基板用晶圓的上面’基底基板用晶圓的表面與硬化的膏的表面會幾乎形成面一致的狀態。並且，以和上面硏磨工程同時或前後的時序，實施下面硏磨工程，其係於燒結後硏磨基底基板用晶圓的下面，到穴部貫通至少硬化的膏露出爲止。藉此，在穴部內硬化的膏會露出於下面。藉由進行此下面硏磨工程，形成於基底基板用晶圓的穴部會之後形成貫通基底基板用晶圓的通 -17- 201010272 孔，且硬化的膏會形成貫通電極。此外，與上面硏磨工程同樣，在基底基板用晶圓的下面，基底基板用晶圓的表面與硬化的膏的表面也可幾乎形成面一致的狀態。藉由進行該等上面硏磨工程及下面硏磨工程，完成貫通電極形成工程。另外，在含於膏的複數個金屬微粒子彼 . 此相接觸之下，可確保貫通電極的電氣導通性。其次，進行繞拉電極形成工程，其係於基底基板用晶圓的上面使導電性材料圖案化，而形成複數個對貫通電極 q 電性連接的繞拉電極。此時，在之後疊合兩晶圚時，以能夠收於蓋體基板用晶圓所形成的凹部內之方式形成繞拉電極。特別是貫通電極如上述般在表面無凹陷，對基底基板用晶圓的上面幾乎形成面一致的狀態。因此，在基底基板用晶圓的上面被圖案化的繞拉電極是之間不使產生間隙等，以對貫通電極密合的狀態連接。藉此，可使繞拉電極與貫通電極的導通性成爲確實者。 0 其次，進行安裝工程，其係將複數的壓電振動片分別經由繞拉電極來接合於基底基板用晶圓的上面。藉此，所被接合的各壓電振動片是形成經由繞拉電極來對貫通電極導通的狀態。安裝終了後，進行疊合基底基板用晶圓與蓋體基板用晶圓的疊合工程。藉此，所被接合的複數個壓電振動片是形成被收納於以凹部及兩晶圓所包圍的空腔內之狀態。其次，進行接合叠合的兩晶圓的接合工程。藉此，因 -18- 201010272 爲兩晶圓會牢固地密合，所以可將壓電振動片密封於空腔內。此時，形成於基底基板用晶圓的貫通孔是被貫通電極所阻塞，因此不會有空腔內的氣密經貫通孔而受損的情形 .· 。特別是構成貫通電極的膏會被牢固地黏著於貫通孔的內 . 面，因此可確實地維持空腔內的氣密。其次，進行外部電極形成工程，其係於基底基板用晶圓的下面使導電性材料圖案化，而形成複數個電性連接至 0 貫通電極的外部電極。此情況也是與繞拉電極的形成時同様，對基底基板用晶圓的下面，貫通電極幾乎是形成面一致的狀態，因此，被圖案化的外部電極是之間不使間隙等發生，以對貫通電極密合的狀態連接。藉此，可使外部電極與貫通電極的導通性成爲確實者。藉由此工程，可利用外部電極來使密封於空腔內的壓電振動片作動。最後，進行切斷工程，其係切斷所被接合的基底基板用晶圓及蓋體基板用晶圓，而小片化成複數的壓電振動子 Φ ' 其結果，可一次製造複數個2層構造式表面安裝型的壓電振動子，其係於被互相接合的基底基板與蓋體基板之間形成的空腔內密封壓電振動片。特別是可在對基底基板幾乎面一致的狀態下形成貫通電極，因此可使貫通電極對繞拉電極及外部電極確實地密合。其結果，可確保壓電振動片與外部電極的安定導通性，可提升作動性能的可靠度而謀求高品質化。又，由於有關空腔內的氣密也可確實地維持，因此此點也可謀求高品 -19- 201010272 質化。更在下面硏磨工程中，是不依燒結時減少的膏的體積，而是可根據基底基板用晶圓的厚度及穴部的深度來設定硏磨量。因此，有關下面硏磨工程是不必確認膏的狀態後 · 進行硏磨，只要硏磨預先決定的量即可。因此，可防止硏 . 磨不足或過度的硏磨。又，由於可藉由利用膏p的簡單方法來形成貫通電極，因此可謀求工程的簡素化。更因爲在埋入膏時使用有底 @ 穴的穴部，所以胥的埋入作業容易，可謀求工程的簡素化。加上無浪費使用胥之虞。 (5) 上述充塡工程時，可將上述膏脫泡處理後埋入上述穴部內。此情況，因爲在事前將膏脫泡處理，所以可充塡極力未含氣泡等的膏。因此，即使進行燒結工程，還是可儘可能抑制膏的體積減少。因此，可減少之後進行的硏磨量，削減硏磨所花費的時間，進而能夠效率佳地製造壓電振動 · 子。 . (6) 又，本發明之壓電振動子的製造方法，係利用基底基板用晶圓及蓋體基板用晶圓來一次製造複數個在互相接合的基底基板與蓋體基板之間所形成的空腔內密封壓電振動片的壓電振動子之方法，其特徵係具備：凹部形成工程，其係於上述蓋體基板用晶圓，形成複數個在疊合兩晶圓時形成上述空腔的空腔用凹部：貫通電極形成工程，其係於上述基底基板用晶圓，利 -20- 201010272 用含複數的金屬微粒子的膏來形成複數個貫通晶圓的貫通電極；繞拉電極形成工程，其係於上述基底基板用晶圓的上 / 面，形成複數個對上述貫通電極電性連接的繞拉電極； . 安裝工程，其係將複數的上述壓電振動片經由上述繞拉電極來接合於上述基底基板用晶圓的上面；疊合工程，其係疊合上述基底基板用晶圓與上述蓋體 Φ 基板用晶圓，在以上述凹部及兩晶圓所包圍的上述空腔內收納上述壓電振動片；接合工程，其係接合上述基底基板用晶圓及上述蓋體基板用晶圓，將上述壓電振動片密封於上述空腔內；外部電極形成工程，其係於上述基底基板用晶圓的下面，形成複數個電性連接至上述貫通電極的外部電極；及切斷工程，其係切斷所被接合的上述兩晶圓，而小片化成複數的上述壓電振動子，又，上述貫通電極形成工程係具有： * 貫通孔形成工程，其係於上述基底基板用晶圓形成複數個貫通此晶圓的貫通孔；充塡工程，其係於該等複數的貫通孔內埋入上述膏而阻塞貫通孔；燒結工程，其係以預定的溫度來燒結所埋入的膏而使硬化；及硏磨工程，其係於燒結後將基底基板用晶圓的雨面分別只硏磨預定的厚度。 -21 - 201010272 若根據此發明的壓電振動子的製造方法，則首先進行凹部形成工程，其係於蓋體基板用晶圓形成複數個空腔用的凹部。該等凹部是在之後叠合兩晶圓時，形成空腔的凹部。以和此工程同時或前後的時序，進行在基底基板用晶 ·. 圓形成複數個貫通電極的貫通電極形成工程。此時，在之 . 後疊合兩晶圓時，以能夠收於蓋體基板用晶圓所形成的凹部內之方式形成複數個貫通電極。若詳細說明有關此貫通電極形成工程，則首先進行貫 @ 通孔形成工程，其係於基底基板用晶圓形成複數個貫通晶圓的貫通孔。接著，進行充塡工程，其係於該等複數的貫通孔內無間隙地埋入含金靥微粒子的膏而阻塞貫通孔。接著，進行燒結工程，其係以預定的溫度來燒結充塡的膏而使硬化。藉此，膏會形成牢固地黏著於貫通孔的內面之狀態。可是，硬化的膏是在燒結時膏內的有機物會蒸發，因此相較於充塡工程時，體積會減少。因此，在膏的表面，無論如何也會產生凹陷。 & 於是，在燒結後，進行上面硏磨工程，其係將基底基 ' 板用晶圓的兩面分別只硏磨預定的厚度。藉由進行此工程 ’藉由燒結而硬化的膏的兩面也可同時硏磨，所以可削去凹陷的部分的周圍。亦即，可使硬化的膏的表面平坦化。因此，基底基板用晶圓的表面與貫通電極的表面會幾乎形成面一致的狀態。藉由此硏磨工程，完成貫通電極形成工程。另外，在含於胥的複數個金屬微粒子彼此相接觸之下，可確保貫通電極的電氣導通性。 -22- 201010272 其次，進行繞拉電極形成工程’其係於基底基板用晶圓的上面使導電性材料圖案化，而形成複數個對貫通電極電性連接的繞拉電極。此時，在之後疊合兩晶圓時，以能 .· 夠收於蓋體基板用晶圓所形成的凹部內之方式形成繞拉電 . 極。特別是貫通電極如上述般表面無凹陷，對基底基板用晶圓的上面幾乎形成面一致的狀態。因此，在基底基板用 Φ 晶圓的上面被圖案化的繞拉電極是之間不使產生間隙等，以對貫通電極密合的狀態連接。藉此，可使繞拉電極與貫通電極的導通性成爲確實者。其次，進行安裝工程，其係將複數的壓電振動片分別經由繞拉電極來接合於基底基板用晶圓的上面。藉此，所被接合的各壓電振動片是形成經由繞拉電極來對貫通電極導通的狀態。安裝終了後，進行疊合基底基板用晶圓與蓋體基板用晶圓的疊合工程。藉此，所被接合的複數個壓電 0 振動片是形成被收納於以凹部及兩晶圓所包圍的空腔內之 . 狀態。其次，進行接合疊合的兩晶圓的接合工程。藉此，因爲兩晶圓會牢固地密合，所以可將壓電振動片密封於空腔內。此時，形成於基底基板用晶圓的貫通孔是被貫通電極所阻塞，因此不會有空腔內的氣密經貫通孔而受損的情形。特別是構成貫通電極的膏會被牢固地黏著於貫通孔的內面，因此可確實地維持空腔內的氣密。其次，進行外部電極形成工程，其係於基底基板用晶 -23- 201010272 圓的下面使導電性材料圖案化，而形成複數個電性連接至各貫通電極的外部電極。此情況也是與繞拉電極的形成時同様，對基底基板用晶圓的下面，貫通電極幾乎是形成面一致的狀態，因此，被圖案化的外部電極是之間不使間隙 · 等發生，以對貫通電極密合的狀態連接。藉此，可使外部 . 電極與貫通電極的導通性成爲確實者。藉由此工程，可利用外部電極來使密封於空腔內的壓電振動片作動。最後，進行切斷工程，其係切斷所被接合的基底基板 @ 用晶圚及蓋體基板用晶圓，而小片化成複數的壓電振動子〇其結果，可一次製造複數個2層構造式表面安裝型的壓電振動子，其係於被互相接合的基底基板與蓋體基板之間形成的空腔內密封壓電振動片。特別是表面無凹陷，可在對基底基板幾乎面一致的狀態下形成貫通電極，因此可使貫通電極對繞拉電極及外部電極確實地密合。其結果，可確保壓電振動片與外部電極 # 的安定導通性，進而能夠提升作動性能的可靠度而謀求高品質化。又，由於有關空腔內的氣密也可確實地維持，因此此點也可謀求高品質化。加上，可藉由利用膏的簡單方法來形成貫通電極，因此可謀求工程的簡素化。 (7)上述充塡工程時，可將上述膏脫泡處理後埋入上述貫通孔內。此情況，因爲事前將膏脫泡處理，所以可充塡極力未含氣泡等的膏。因此，即使進行燒結工程，還是可儘可能 -24- 201010272 抑制膏的體積減少。因此，可減少之後進行的硏磨量，削減硏磨所花費的時間，進而能夠效率佳地製造壓電振動子〇 .· (8)在上述安裝工程前，具備接合膜形成工程，其 • 係於疊合上述基底基板用晶圓與上述蓋體基板用晶圓時，將包圍上述凹部的周圍的接合膜形成於基底基板用晶圓的上面， φ 上述接合工程時，可經由上述接合膜來陽極接合上述兩晶圓。此情況，因爲經由接合膜來陽極接合基底基板用晶圓與蓋體基板用晶圓，所以可更牢固地接合兩晶圓來提高空腔內的氣密性。因此，可使壓電振動片更高精度地振動，進而能夠謀求更高品質化。 (9) 上述安裝工程時，可利用導電性的凸塊來凸塊接合上述壓電振動片。 φ 此情況，因爲凸塊接合壓電振動片，所以可使壓電振 ' 動片從基底基板的上面浮起凸塊的厚度量。因此，可自然確保壓電振動片的振動所必要的最低限度的振動間隙。因此，可更提升壓電振動子的作動性能的可靠度。 (10) 上述充塡工程時，可埋入含非球形形狀的金屬微粒子的膏。此情況，因爲含於膏的金屬微粒子不是球形，而是形成非球形，例如細長的纖維狀或剖面星形狀，所以在彼此相接觸時，不是點接觸，而是容易形成線接觸。因此，可 -25- 201010272 更提高貫通電極的電性導通性。 (11) 上述充塡工程時，可埋入被混合與上述基底基板用晶圓大致同熱膨脹率的粒體之膏。此情況，因爲在膏中混合有熱膨脹率與基底基板用晶 ·. 圓大致相的粒體，所以在燒結時，可使膏的熱膨脹接近基 - 底基板用晶圓的熱膨脹。因此，不易在兩者之間因熱膨脹差而產生間隙等，可使兩者形成更密合的狀態。其結果，可形成更提高氣密性的貫通電極，進而能夠提升長期性的 @ 氣密可靠度。 (12) 又，本發明之壓電振動子的特徵係具備：基底基板，其係兩面被硏磨加工；蓋體基板，其係形成有空腔用的凹部，在使凹部對向於上述基底基板的狀態下被接合於基底基板；壓電振動片，其係利用上述凹部在收納於上述基底基板與上述蓋體基板之間所形成的空腔內的狀態下，被接合於上述基底基板的上面； # 外部電極，其係形成於上述基底基板的下面； _ 貫通電極，係以能夠貫通上述基底基板的方式形成，維持上述空腔內的氣密的同時，對上述外部電極電性連接 :及繞拉電極，其係形成於上述基底基板的上面，使上述貫通電極對所被接合的上述壓電振動片電性連接，又’上述貫通電極係藉由含複數個金屬微粒子的膏的硬化所形成。 -26- 201010272 若根據本發明的壓電振動子，則可成爲一種能夠確實地維持空腔內的氣密的同時，可確保壓電振動片與外部電極的安定導通性之高品質的2層構造式表面安裝型的壓電 .. 振動子。 - (13)上述基底基板及上述蓋體基板可經由以能夠包圍上述凹部的周圍之方式形成於兩基板之間的接合膜來陽極接合。 φ 此情況，可實現與上述（8)所記載的壓電振動子的製造方法同樣的作用效果。 (14) 上述壓電振動片可藉由導電性的凸塊來凸塊接合。此情況，可實現與上述（9)所記載的壓電振動子的製造方法同樣的作用效果。 (15) 上述金屬微粒子可爲非球形形狀。此情況，可實現與上述（10)所記載的壓電振動子的 Φ 製造方法同様的作用效果。 * ( 16)在上述膏中混合有與上述基底基板大致同熱膨脹率的粒體。此情況，可實現與上述（11)所記載的壓電振動子的製造方法同樣的作用效果。 (17) 又，本發明的振盪器係以上述（12)〜（16) 中任一項所記載的壓電振動子作爲振盪子來電性連接至積體電路。 (18) 又，本發明的電子機器係上述（12)〜（16) -27- 201010272 中任一項所記載的壓電振動子爲電性連接至計時部。 — (19)又，本發明的電波時鐘係上述（12)〜（16) 中任一項所記載的壓電振動子爲電性連接至濾波器部。若根據此發明的振盪器、電子機器及電波時鐘，則因爲具備空腔內的氣密確實，且作動的可靠度會提升之高品質的壓電振動子，所以同様可提高作動的可靠度來謀求高品質化。〔發明的效果〕若根據本發明的壓電振動子，則可成爲一種能夠確實地維持空腔內的氣密的同時，可確保壓電振動片與外部電極的安定導通性之高品質的2層構造式表面安裝型的壓電振動子。又，若根據本發明的壓電振動子的製造方法，則可一次效率佳地製造上述壓電振動子，進而能夠謀求低成本化〇又，若根據本發明的振盪器、電子機器及電波時鐘’ 則因爲具備上述的壓電振動子，所以可同樣地提高作動的可靠度來謀求高品質化。【實施方式】 (第1實施形態）以下’參照圖1〜圖2 1來說明本發明的第1實施形態 -28- 201010272 本實施形態的壓電振動子1是如圖1〜圖4所示，形成以基底基板2及蓋體基板3來積層成2層的箱狀，在內部的空腔C內收納有壓電振動片4的表面安裝型的壓電振 .. 動子。 - 另外，在圖4中，爲了容易看圖面，而省略後述的激發電極 15、拉出電極（extractor electrode) 19、20、安裝電極（mount electrode) 16、17及重疊金屬膜21的圖 0 示。如圖5〜7所示，壓電振動片4是由水晶、鉬酸鋰或鈮酸鋰等壓電材料所形成的音叉型的振動片，在被施加預定電壓時振動者。此壓電振動片4是具有：平行配置的一對的振動腕部 10、11、及一體固定一對的振動腕部10、11的基端側的基部12、及形成於一對的振動腕部10、11的外表面上而使一對的振動腕部10、11振動之由第1激發電極13及第 φ 2激發電極14所構成的激發電極15、及被電性連接至第1 * 激發電極13及第2激發電極14的安裝電極16、17。並且，本實施形態的壓電振動片4是具備在一對的振動腕部10、11的兩主面上沿著振動腕部10、11的長度方向來分別形成的溝部18。此溝部18是從振動腕部1〇、U 的基端側到大致中間附近形成。由第1激發電極13及第2激發電極14所構成的激發電極15是使一對的振動腕部10、11以預定的共振頻率來振動於互相接近或離間的方向之電極，在一對的振動腕部 -29- 201010272 10、11的外表面，分別被電性切離的狀態下被圖案化而形成。具體而言，如圖7所示，第1激發電極13是主要形成於一方的振動腕部1〇的溝部18上及另一方的振動腕部 11的兩側面上，第2激發電極14是主要形成於一方的振 \ 動腕部10的兩側面上及另一方的振動腕部11的溝部18 . 上。又，第1激發電極13及第2激發電極14，如圖5及圖6所示，在基部12的兩主面上，分別經由拉出電極19 0 、20來電性連接至安裝電極16、17。然後，壓電振動片4 可經由此安裝電極16、17來施加電壓。另外，上述的激發電極15、安裝電極16、17及拉出電極19、20是例如藉由鉻（Cr)、鎳（Ni)、鋁（A1) 或鈦（Ti)等的導電性膜的被膜來形成者。在一對的振動腕部10、11的前端被覆有用以進行調整（頻率調整）的重疊金屬膜21，使本身的振動狀態能夠在預定的頻率範圍內振動。另外，此重疊金屬膜21是被 # 分成：粗調頻率時使用的粗調膜21a、及微調時使用的微調 ’ 膜21b。利用該等粗調膜21a及微調膜21b來進行頻率調整下，可將一對的振動腕部10、11的頻率收於裝置的標稱頻率的範圍內。如此構成的壓電振動片4是如圖3及圖4所示，利用金等的凸塊P在基底基板2的上面凸塊接合。更具體而言，在基底基板2的上面被圖案化的後述繞拉電極36、37 上所形成的2個凸塊P上，一對的安裝電極16、17分別 -30- 201010272 接觸的狀態下凸塊接合。藉此，壓電振動片4是在從基底基板2的上面浮起的狀態下被支持，且安裝電極16、17 與繞拉電極36、37分別形成電性連接的狀態。 .· 上述蓋體基板3是由玻璃材料、例如鈉鈣玻璃所構成 - 的透明絕緣基板，如圖1、圖3及圖4所示，形成板狀。然後，在接合基底基板2的接合面側形成有容納壓電振動片4之矩形狀的凹部3a。此凹部3a是在兩基板2、3疊合 e 時，收容壓電振動片4之形成空腔C的空腔用凹部。而且，蓋體基板3是使該凹部3a對向於基底基板2側的狀態下對基底基板2陽極接合。上述基底基板2是與蓋體基板3同樣地由玻璃材料、例如鈉鈣玻璃所構成的透明絕緣基板，如圖1〜圖4所示，以可對蓋體基板3重叠的大小來形成板狀。在此基底基板2形成有貫通基底基板2的一對通孔30 、31。此時，一對的通孔30、31是以能夠收於空腔C內 Φ 的方式形成。更詳細說明，本實施形態的通孔30、31是 ' 形成一方的通孔30位於所被安裝的壓電振動片4的基部 1 2側，另一方的通孔3 1位於振動腕部1 〇、1 1的前端側。另外，本實施形態是舉筆直貫通基底基板2之直狀的通孔爲例來進行說明，但並非限於此情況，即使是朝基底基板 2的下面漸縮徑的剖面錐狀的通孔也無妨。無論如何只要貫通基底基板2即可。然後，在該等一對的通孔30、31中形成有以能夠塡埋通孔30、31的方式形成的一對貫通電極32、33。如圖 -31 - 201010272 8所示’該等貫通電極32、33是藉由含複數的金屬微粒子 P1的膏P的硬化來形成者，擔負將通孔30、31完全阻塞而維持空腔C內的氣密的同時，使後述的外部電極38、 39與繞拉電極36、37導通的任務。 · 另外，貫通電極32、33是在膏P中所含的複數個金 - 屬微粒子P1互相接觸下，確保電氣導通性。又，本實施形態的金屬微粒子P1是舉藉由銅等來形成細長的纖維狀 (非球形形狀）時爲例進行說明。 @ 在基底基板2的上面側（接合有蓋體基板3的接合面側），如圖1〜圖4所示，藉由導電性材料（例如鋁）來使陽極接合用的接合膜35、及一對的繞拉電極36、37圖案化。其中接合膜35是以能夠包圍形成於蓋體基板3的凹部3a的周圍之方式沿著基底基板2的周緣來形成。201010272 VI. Description of the Invention [Technical Field] The present invention relates to a surface mount type (SMD) in which a piezoelectric vibrating piece is sealed between two substrates to be bonded, and the piezoelectric vibrator is manufactured. The manufacturing method of the piezoelectric vibrator, the vibrator oscillator, the electronic device, and the radio wave clock. This application is based on the Japanese Patent No. 2008-35508, φ 36419, and the special purpose 2〇〇8_35511. Prior Art In recent years, piezoelectric vibrators such as mobile phones or portable information terminal crystals have been used as time source or control source, reference signal source, etc. Such piezoelectric vibrators are known, one of which has A surface-mounted piezoelectric vibrator is known. A vibrator is generally known as a three-layer structure. The φ plate and the cover substrate are sandwiched between the upper and lower sides to form a piezoelectric vibrating piece*. In this case, the piezoelectric vibrator is housed in a cavity (sealed chamber) formed between the base substrates. Further, a three-layer structure type and a two-layer structure type have been developed. Piezoelectric vibrator is at the base The base substrate and the lid body are combined to form a two-layer structure, and the piezoelectric vibrating reed is formed between the two substrates. Compared with the piezoelectric vibrator of the two-layer structure type, it is preferable to reduce the thickness and the like. One of the piezoelectric vibrators suitable for the use of the layer structure type has a piezoelectric vibrator formed by the formation of a cavity, and has a piezoelectric special purpose 2008- into its content. In the device, the use of signals, etc. Each of the piezoelectric-based piezoelectric substrate substrates and the cover has a three-layer structure in which the cover is not directly connected to the upper substrate. In this case, the conductive member penetrating the base substrate-5-201010272 is used. A piezoelectric vibrator in which a piezoelectric vibrating piece is electrically connected to an external electrode formed on a base substrate is known (see Patent Document 1 and Patent Document 2). The piezoelectric vibrator 600 is as shown in FIGS. 70 and 71. The base substrate 601 and the lid substrate 602 which are anodically bonded to each other via the bonding film 607, and the piezoelectric vibrating reed 603 sealed in the cavity C formed between the two substrates 601 and 602 are provided. Is, for example, a tuning fork type vibrating piece in the cavity C The upper surface of the base substrate 601 is attached via a conductive adhesive E. The base substrate 601 and the lid substrate 602 are, for example, insulating substrates made of ceramics or glass, etc. The base substrates 601 are formed in the base substrates 601. The through hole 604 of the base substrate 601. Then, a conductive member 605 is embedded in the through hole 604 so as to block the through hole 604. The conductive member 60 5 is electrically connected to the lower surface of the base substrate 601. The external electrode 606 is electrically connected to the piezoelectric vibrating piece 603 which is mounted in the cavity c. [Patent Document 1] JP-A-2002-124845 (Patent Document 2) JP-A-2006-279872 SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in the piezoelectric vibrator of the two-layer structure type described above, the conductive member 605 is configured to block the through hole 604 while maintaining the airtightness in the cavity C, and to make the pressure The two tasks of the electrical vibrating piece 603 and the external electrode 606 are turned on. In particular, if -6-201010272 is insufficiently adhered to the through hole 604, the airtightness in the cavity C may be impaired, and if the contact with the conductive adhesive E or the external electrode 706 is insufficient, This causes malfunction of the piezoelectric vibrating piece 603. Therefore, in order to eliminate such an inconvenience, it is necessary to firmly adhere to the inner surface of the through hole 604. The through hole 604 is completely blocked in the state, and the conductive member 605 is formed in a state where the surface is free from depression or the like. However, in Patent Document 1 and Patent Document 2, a conductive paste (Ag paste or Au-Sn paste) is used to form the conductive member 605. However, in practice, how to form The manufacturing method is not described in any way. Generally, when a conductive paste is used, it is required to be sintered to be hardened. That is, after the conductive paste is buried in the through hole 604, it is necessary to be sintered to be hardened. However, once sintering is performed, the organic substance contained in the conductive paste disappears by evaporation, so that the volume after sintering is usually smaller than that before sintering (for example, the conductive paste is 20% larger in volume when the Ag paste is used). Therefore, even if the conductive member 605 is formed of a conductive paste, there is a fear that the surface is recessed, or * the serious case is that the through hole is cut at the center. As a result, airtightness in the cavity C may be impaired, or the continuity between the piezoelectric vibration piece 603 and the external electrode 606 may be impaired. The present invention has been made in consideration of such a situation, and an object of the present invention is to provide a two-layer structure having a high quality that ensures the airtightness in the cavity while ensuring the stability of the piezoelectric vibrating piece and the external electrode. Surface mount type piezoelectric vibrator. Further, a method of manufacturing a piezoelectric vibrator in which the piezoelectric vibrator is efficiently manufactured, an oscillator having a piezoelectric vibrator 201010272, an electronic device, and a radio wave clock are provided. (Means for Solving the Problem) In order to achieve the object of solving the above problems, the present invention provides the following hand segments. (1) The method of manufacturing a piezoelectric vibrator according to the present invention, wherein a plurality of substrates formed between the base substrate and the lid substrate are bonded together by using a wafer for a base substrate and a wafer for a lid substrate. A method for sealing a piezoelectric vibrator of a piezoelectric vibration device in a cavity, characterized in that: a concave portion forming process is performed on the wafer for a cover substrate, and a plurality of wafers are formed to form the plurality of wafers a cavity for cavity cavity; a through electrode forming process for the base substrate wafer, a plurality of through-wafer through electrodes formed by a paste containing a plurality of metal fine particles; and a winding electrode forming process a plurality of winding electrodes electrically connected to the through electrodes are formed on the upper surface of the base substrate wafer, and a plurality of the piezoelectric vibrating pieces are bonded to the base substrate via the winding/pull electrodes. The upper surface of the wafer; the superimposing process of laminating the wafer for the base substrate and the wafer for the cover substrate in the cavity surrounded by the recess and the two wafers The piezoelectric vibrating piece is bonded to the base substrate wafer and the cover substrate wafer, and the piezoelectric vibrating piece is sealed in the cavity; the external electrode forming process is performed on the above The lower -8-201010272 surface of the base substrate wafer is formed with a plurality of external splicing processes electrically connected to the through electrodes, and the plurality of the above-mentioned piezoelectric vibrators are formed by cutting the bonded two wafers Further, the through electrode forming engineering system has: a hole holding process for holding a plurality of holding holes for holding the paste for the base substrate; and a charging process for embedding the Φ blocking holding hole in the plurality of holding holes; Temporarily sintering the embedded paste and then hardening it; and honing the project, after temporary sintering or formal sintering, the base substrate is honed to a predetermined thickness on both sides of the wafer, and the honing process is performed after the main sintering. In the case of the sintering process, the amount of the paste which is reduced by the temporary sintering is filled with the paste which is temporarily sintered, and the entire crucible is temporarily sintered and sintered. * According to the above-described method of manufacturing a piezoelectric vibrator, a first construction process is performed in which a plurality of empty portions are formed on a wafer for a cover substrate. These recesses are through-electrode forming processes in which a plurality of through electrodes are formed on the base substrate at the timing of forming a cavity at the same time or before and after the two wafers are stacked. At this time, when the two wafers are combined, a plurality of through electrodes are formed so as to be formed in the wafer for the cover substrate. The through electrode forming process is based on honing the crystal ruthenium for the base substrate; and the small circle is formed by forming the above-mentioned paste and sintering, and the base is attached to the new paste, and then the recessed concave portion for performing the concave cavity is formed. . The crystal circle is used to honing the circle inside the recessed -9- 201010272. The sequence of the project is divided into two types of operations. Here, first, a case will be described in which a honing process is performed after the paste containing a plurality of metal fine particles is formally sintered. First, a holding hole forming process is performed in which a plurality of holding holes for holding a paste are formed on a base substrate wafer. Next, a charging process is performed, in which the paste is buried in the plurality of holding holes without gaps to block the holding holes. Next, a sintering process is carried out in which the paste is temporarily sintered and then sintered to be hardened. Specifically, first, the buried paste @ is temporarily sintered. However, since the paste hardened by the temporary sintering evaporates most of the organic matter in the paste during the temporary sintering, the volume is reduced as compared with the filling process. Therefore, on the surface of the paste, a depression is generated anyway. Thus, a new paste corresponding to the amount of the paste which is reduced during the temporary sintering is added to the temporarily sintered paste. Thereby, a new paste is filled in the depressed portion, so that the surface is flat. Then, after the completion of the replenishment of the paste, in order to prevent the organic substance in the inside of the replenished paste from evaporating rapidly during the main sintering, the paste # is once again temporarily sintered. After the temporary sintering is completed, the entire sintering of the paste is performed. By this, the paste embedded in the filling project and the newly added paste are completely hardened to form an integrated state, and form a state of firmly adhering to the inner surface of the holding hole. By performing temporary sintering and formal sintering of the paste, the sintering process is completed. However, in the paste which is officially sintered, the paste which is embedded in the filling process is evaporated at the time of the initial temporary sintering, so that the paste is replenished. The volume after the temporary sintering and the main sintering is hardly reduced. On the other side, -10-201010272, the new paste, which was added after the initial temporary sintering, will be reduced in volume due to temporary sintering and formal sintering after the paste is replenished, but the amount of the paste itself and the entire paste in the holding hole The amount is compared, very small. Therefore, burn temporarily. · The volume of the paste is reduced by the volume of the finished paste under the new paste. The impact can be ignored to a small extent. Therefore, even if the volume of the newly added paste is reduced, there is no large depression on the surface of the paste which is officially sintered and hardened. That is, the surface of the base substrate wafer and the surface of the cured paste have almost the same surface as the Φ forming surface. Then, after the sintering process, a honing process is performed in which the base substrate is honed by a predetermined thickness on both sides of the wafer. By performing this process, both sides of the paste hardened by the formal sintering can be simultaneously honed. Therefore, it is also possible to eliminate the periphery of the slightly recessed portion of the paste. That is, the surface of the hardened paste can be made flatter. Thereby, the surface of the base substrate wafer and the surface of the cured paste form a more uniform state. By performing this honing process, the through electrode formation process at the time of performing the honing process after the main sintering is completed. Further, when a plurality of metal fine particles contained in the paste are in contact with each other, * electrical continuity of the through electrode can be ensured. Further, in the above-described through electrode forming process, since the amount of honing in the honing process is extremely small, the time required for the honing process can be shortened. On the other hand, the through electrode forming process for performing the honing process before the main sintering is continued. It is the same as the above case until the paste which is embedded in the charging process is temporarily sintered. After temporarily sintering the paste embedded in the filling process, as described above, a depression is formed on the surface of the paste. Then, after the temporary sintering of this -11 - 201010272 is performed, a honing process in which both surfaces of the base substrate wafer are respectively honed to a predetermined thickness is performed. Thereby, since the periphery of the depressed portion of the paste can be removed, the surface of the base substrate wafer and the surface of the temporarily sintered paste almost form a surface. Further, the amount of reduction in the volume of the temporarily sintered paste is smaller than that in the case of one-time sintering without sintering. Therefore, the depression of the surface of the paste which is generated by the temporary sintering is smaller than the depression which is generated when the same amount of the paste is not temporarily sintered and the primary sintering is performed once. Therefore, by temporarily sintering the paste and then performing the honing process, the amount of honing can be suppressed, and in particular, the time required for honing can be shortened. Then, after the honing process, the paste is completely cured by performing the main sintering. Thereby, the paste is formed in a state of being firmly adhered to the inner surface of the holding hole, and the paste has a function as a through electrode. Further, since most of the organic matter in the paste has evaporated during the temporary sintering, the volume of the official sintering is extremely small. Therefore, the surface of the base substrate wafer and the cured surface are maintained in a state in which the surface is almost the same as that before the main sintering. · The through electrode formation process is completed by this formal sintering. The above is the through electrode forming process of the present invention. However, as described above, the honing process is performed at any timing, and the surface of the base substrate wafer and the surface of the cured paste almost form a surface. Next, a winding electrode forming process is performed in which a conductive material is patterned on the upper surface of the base substrate wafer to form a plurality of winding electrodes electrically connected to the through electrodes. At this time, when the two wafers are stacked one after another, the winding -12-201010272 is formed so as to be able to be received in the concave portion formed by the wafer for the cover substrate. In particular, the through electrodes have a state in which the crystal forming surfaces of the base substrates coincide with each other as described above. Therefore, crystals are used in the base substrate. · The patterned wrap-around electrodes are such that no gaps are created between them. Closed state connection. Thereby, the winding electrode and the penetration property can be made reliable. Next, an installation process is performed in which a plurality of piezoelectric Φ are wound around the electrodes to be bonded to the upper surface of the base substrate wafer. Each of the piezoelectric vibrating reeds that are borrowed is in a state of being aligned via the winding electrode. After the mounting is completed, the superimposing of the wafer for laminating the base substrate is performed. Thereby, the plurality of bonded sheets are formed to be accommodated in the space surrounded by the concave portion and the two wafers. Next, bonding work of joining the two wafers is performed. Since the two wafers are firmly adhered to each other, the piezoelectric vibrating piece can be closely sealed, and an external electrode forming process is performed. The conductive material is patterned on the underside of the base circle to form a plurality of external electrodes through the electrodes. . In this case, the electrode is wound around the electrode, and the through-electrode is almost in the lower surface of the wafer for the base substrate. Therefore, the patterned external electrodes are generated in a state in which the through electrodes are in close contact with each other. Thereby, the conductivity between the electrode and the through electrode is confirmed. Finally, the piezoelectric vibrating reed sealed in the cavity is actuated by the external electrode, and the cutting process is performed, and the upper surface of the upper circle of the joined circle is cut by the conduction vibrating piece for the through electrode electrode. Therefore, the state in which the electrode is turned on and the piezoelectric vibrating cavity in the cover body is turned on. Therefore, since the bottom substrate is sealed in the cavity, the formation of the surface is the same as that of forming the surface. The external circuit can be used, and the wafer and the cover substrate wafer can be used for the base substrate-13-201010272, and the plurality of piezoelectric vibrators can be formed into small numbers. As a result, a plurality of 2-layer structural surfaces can be manufactured at one time. A mounted piezoelectric vibrator is sealed in a cavity formed between a base substrate and a cover substrate that are bonded to each other. . In particular, since the through electrode can be formed in a state in which the base substrate is almost flush with each other, the through electrode can be surely adhered to the drawn electrode and the external electrode. As a result, the stable conductivity of the piezoelectric vibrating piece and the external electrode can be ensured, and the reliability of the actuation performance can be improved, and the performance can be improved. Further, since the airtightness in the cavity can be surely maintained, it is also possible to achieve high quality. Further, since the through electrode can be formed by a simple method using a paste, the engineering can be simplified. (2) In the above charging process, the paste may be defoamed and embedded in the holding hole. In this case, since the paste is defoamed beforehand, it is possible to fill the paste which does not contain bubbles or the like. Therefore, even if the sintering process is performed, the volume reduction of the paste can be suppressed as much as possible. Therefore, the amount of honing performed later can be reduced, and the time taken for the honing can be reduced and reduced, and the piezoelectric vibrator can be efficiently manufactured. (3) When the holding hole is formed, the wafer for the base substrate is used. In the upper side, the holding hole is formed with a bottom hole shape, and the honing work may include: an upper honing process, wherein the upper surface of the base substrate wafer is honed only by a predetermined thickness; and −14- 201010272 The grinding process is performed by honing the underside of the base substrate wafer until the paste is penetrated by the holding hole and at least the paste is cured. In this case, when the hole forming process is maintained, the holding hole is formed in a bottom hole shape from the upper surface side of the base substrate wafer. In this way, in the filling project, The burying operation of the paste is easy, and the engineering can be simplified. Plus, no waste. In addition, the honing project is equipped with the above honing project and the following honing project. Φ In particular, in the honing process below, the volume of the paste which is reduced during sintering is not determined, but the amount of honing can be set according to the thickness of the wafer for the base substrate and the depth of the holding hole. Therefore, regarding the following honing work, it is not necessary to confirm the state of the paste and then honing it, as long as the predetermined amount is honed. Therefore, it is possible to prevent honing or excessive honing. (4) Further, in the method of manufacturing a piezoelectric vibrator of the present invention, a plurality of substrates bonded to each other and a lid substrate are formed at a time by using a wafer for a base substrate and a wafer for a lid substrate. A method for sealing a piezoelectric vibrator in a cavity, wherein the method includes: * a recess forming process for forming the wafer for the cover substrate, forming a plurality of the above-mentioned two wafers a recessed portion for a cavity of a cavity; a through electrode forming process for forming a through-wafer for forming a plurality of through-wafers by using a paste containing a plurality of metal fine particles; and forming a winding electrode a plurality of winding electrodes electrically connected to the through electrodes are formed on the upper surface of the base substrate wafer; and the plurality of piezoelectric vibrating pieces are bonded to each other via the winding electrode -15-201010272 The upper surface of the base substrate wafer: a superimposed project in which the base substrate wafer and the lid substrate wafer are stacked, and surrounded by the concave portion and the two wafers Said cavity housing the piezoelectric vibrating piece; *. In the bonding process, the wafer for the base substrate and the lid are bonded. a substrate wafer for sealing the piezoelectric vibrating piece in the cavity; and an external electrode forming process for forming a plurality of external electrodes electrically connected to the through electrode on a lower surface of the base substrate wafer; a cutting process for cutting the two wafers to be joined, and forming a plurality of the piezoelectric vibrators in a small piece, and the through electrode forming engineering system has a hole forming process for the base substrate Forming a plurality of pockets on the upper surface of the wafer; the filling process is to embed the paste in the plurality of pockets to block the retaining holes; and the sintering process is to sinter the embedded paste at a predetermined temperature Hardening φ; - The honing process above is to honing the base substrate wafer to a predetermined thickness only after sintering; and the underlying honing process is to sinter the underlying wafer for the base substrate after sintering The paste that has been ground until the hole is hardened is at least exposed. According to the method for manufacturing a piezoelectric vibrator described above, first, a concave portion forming process is performed for forming a plurality of concave portions for a cavity in a wafer for a cover substrate. The recesses are recesses that form a cavity when the rain wafer is subsequently laminated. -16- 201010272 A through electrode forming process in which a plurality of through electrodes are formed in a circular shape on a base substrate at the same time as or before and after the process. At this time, when the two wafers are stacked one after another, a plurality of through electrodes are formed so as to be receivable in the concave portion formed by the wafer for the cover substrate. • When the through electrode formation process is described in detail, first, a hole forming process is performed in which a plurality of holes are formed on the upper surface of the base substrate wafer. Next, a charging process is performed in which the metal microparticle-containing paste is buried in the plurality of holes to block the cavity portion. Next, a sintering process is performed which sinters the enthalpy of the crucible at a predetermined temperature to harden it. Thereby, the paste forms a state of firmly adhering to the inner surface of the cavity. However, the hardened paste is such that the organic matter in the crucible evaporates during sintering, so that the volume is reduced as compared with the filling process. Therefore, on the surface of the paste, a depression is generated anyway. Then, after the sintering, the above honing work is performed, which is to honing only the predetermined thickness of the upper surface of the wafer for the base substrate. By performing this process, the paste hardened by sintering can be honed on the upper surface of the wafer for the base substrate, so that the periphery of the recessed portion can be cut off. That is, the surface of the hardened paste can be flattened. Therefore, the surface of the base substrate wafer "the surface of the base substrate wafer and the surface of the cured paste have almost the same surface." Further, the lower honing process is performed at the same time as or before the honing process, and is performed by honing the lower surface of the wafer for the base substrate after sintering, and exposing the at least the hardened paste to the cavity portion. Thereby, the paste hardened in the cavity portion is exposed below. By performing the honing process below, a hole penetrating through the base substrate wafer is formed in the hole portion of the base substrate wafer, and the hardened paste forms a through electrode. Further, similarly to the above honing process, the surface of the base substrate wafer and the surface of the cured paste may be almost in the same plane on the lower surface of the base substrate wafer. The through electrode forming process is completed by performing the above honing process and the following honing process. In addition, in the plurality of metal particles contained in the paste. Under this contact, the electrical continuity of the through electrodes can be ensured. Next, a winding electrode forming process is performed in which a conductive material is patterned on the upper surface of the base substrate wafer to form a plurality of winding electrodes electrically connected to the through electrodes q. At this time, when the two wafers are stacked one after another, the winding electrode is formed so as to be able to be housed in the concave portion formed by the wafer for the cover substrate. In particular, the through electrode has no recess on the surface as described above, and the surface of the base substrate wafer has almost the same surface. Therefore, the wrap electrodes that are patterned on the upper surface of the base substrate wafer are connected to each other without causing a gap or the like to be in contact with the through electrodes. Thereby, the conductivity between the winding electrode and the through electrode can be made reliable. Next, an installation process is performed in which a plurality of piezoelectric vibrating reeds are bonded to the upper surface of the base substrate wafer via a winding electrode. Thereby, each of the piezoelectric vibrating reeds to be joined is in a state in which the through electrodes are electrically connected via the winding electrodes. After the mounting is completed, the superimposing of the wafer for the base substrate and the wafer for the cover substrate is performed. Thereby, the plurality of piezoelectric vibrating reeds to be joined are formed in a state of being housed in a cavity surrounded by the concave portion and the two wafers. Next, bonding work of joining the two wafers is performed. Therefore, since the two wafers are firmly adhered to -18-201010272, the piezoelectric vibrating piece can be sealed in the cavity. At this time, since the through hole formed in the base substrate wafer is blocked by the through electrode, there is no possibility that the airtightness in the cavity is damaged through the through hole. · . In particular, the paste constituting the through electrode is firmly adhered to the through hole. The surface thus ensures the airtightness in the cavity. Next, an external electrode forming process is performed in which a conductive material is patterned on the underside of the base substrate wafer to form a plurality of external electrodes electrically connected to the 0 through electrodes. In this case as well, the formation of the wrap-around electrode is the same as that of the underlying wafer, and the through-electrode has almost the same surface. Therefore, the patterned external electrode does not cause a gap or the like. The through electrodes are connected in a state of close contact. Thereby, the conductivity of the external electrode and the through electrode can be made reliable. By this engineering, the external electrode can be used to activate the piezoelectric vibrating piece sealed in the cavity. Finally, the cutting process is performed to cut the bonded base substrate wafer and the lid substrate wafer, and the small pieces are formed into a plurality of piezoelectric vibrators Φ'. As a result, a plurality of two-layer structures can be manufactured at one time. A surface mount type piezoelectric vibrator that seals a piezoelectric vibrating piece in a cavity formed between a base substrate and a cover substrate that are bonded to each other. In particular, since the through electrode can be formed in a state in which the base substrate is almost flush with each other, the through electrode can be surely adhered to the drawn electrode and the external electrode. As a result, the stability of the piezoelectric vibrating piece and the external electrode can be ensured, and the reliability of the actuating performance can be improved to achieve high quality. Moreover, since the airtightness in the cavity can be surely maintained, it is also possible to achieve high quality -19-201010272. Further, in the following honing process, the volume of the paste which is reduced during sintering is not determined, but the amount of honing can be set according to the thickness of the base substrate wafer and the depth of the cavity portion. Therefore, after the honing work is not necessary to confirm the state of the paste, it is necessary to honing, as long as the predetermined amount is honed. Therefore, it can prevent cockroaches. Insufficient grinding or excessive honing. Further, since the through electrode can be formed by a simple method using the paste p, the engineering can be simplified. In addition, since the hole portion of the bottom hole is used when the paste is buried, the burying operation is easy, and the engineering can be simplified. Plus no waste to use. (5) In the above charging process, the paste may be defoamed and embedded in the cavity. In this case, since the paste is defoamed beforehand, it is possible to fill the paste which does not contain bubbles or the like. Therefore, even if the sintering process is performed, the volume reduction of the paste can be suppressed as much as possible. Therefore, the amount of honing performed later can be reduced, the time taken for honing can be reduced, and the piezoelectric vibration can be efficiently manufactured. . (6) In the method of manufacturing a piezoelectric vibrator of the present invention, a plurality of wafers for a base substrate and a wafer for a lid substrate are used to fabricate a plurality of substrates bonded to each other between the base substrate and the lid substrate. A method of sealing a piezoelectric vibrator of a piezoelectric vibrating piece in a cavity, comprising: a recess forming process for forming a wafer for the cover substrate, forming a plurality of cavities formed when two wafers are stacked Cavity recessed portion: a through electrode forming process for the base substrate wafer, Li-20-201010272, using a paste containing a plurality of metal fine particles to form a plurality of through electrodes penetrating through the wafer; And a plurality of winding electrodes electrically connected to the through electrodes are formed on the upper surface of the base substrate wafer; In the mounting process, the plurality of piezoelectric vibrating reeds are bonded to the upper surface of the base substrate wafer via the wraparound electrode, and the superimposing project is to laminate the base substrate wafer and the cover Φ substrate The piezoelectric vibrating reed is housed in the cavity surrounded by the concave portion and the two wafers by a wafer, and the bonding substrate is bonded to the base substrate wafer and the lid substrate wafer, and the pressure is applied The electric vibrating piece is sealed in the cavity; the external electrode forming process is formed on the lower surface of the base substrate wafer, and a plurality of external electrodes electrically connected to the through electrode are formed; and the cutting process is cut off The two wafers to be joined are formed into a plurality of the piezoelectric vibrators, and the through electrode forming process includes: * a through hole forming process in which the plurality of wafers are formed on the base substrate. a through hole of a wafer; the filling process is to embed the paste in the plurality of through holes to block the through hole; and the sintering process is performed at a predetermined temperature The embedded in the hardened paste; WH and grinding works, based on which the base substrate after the rain sintered surface respectively of the wafer WH mill only a predetermined thickness. In the method of manufacturing a piezoelectric vibrator according to the present invention, first, a concave portion forming process is performed for forming a plurality of concave portions for a cavity in a wafer for a cover substrate. The recesses are recesses that form a cavity when the two wafers are subsequently laminated. The crystal for the base substrate is used at the same time as or before and after the project. A through electrode forming a plurality of through electrodes is formed in a circle. At this time, in it. When the two wafers are stacked one after another, a plurality of through electrodes are formed so as to be receivable in the concave portion formed by the wafer for the cover substrate. When the through electrode formation process is described in detail, first, a through hole forming process is performed in which a plurality of through holes penetrating through the crystal are formed on the base substrate wafer. Next, a charging process is performed in which the paste containing the gold ruthenium particles is buried in the plurality of through holes without a gap to block the through holes. Next, a sintering process is carried out which sinters the filled paste at a predetermined temperature to harden it. Thereby, the paste forms a state of firmly adhering to the inner surface of the through hole. However, the hardened paste is such that the organic matter in the paste evaporates during sintering, so that the volume is reduced as compared with the filling process. Therefore, on the surface of the paste, a depression is generated anyway. & Thus, after sintering, the above honing process is performed by honing only the predetermined thickness on both sides of the substrate-based wafer. By performing this process, both sides of the paste hardened by sintering can be simultaneously honed, so that the periphery of the recessed portion can be cut. That is, the surface of the hardened paste can be flattened. Therefore, the surface of the base substrate wafer and the surface of the through electrode have almost the same surface. Through the honing process, the through electrode forming process is completed. Further, when a plurality of metal fine particles contained in the crucible are in contact with each other, electrical continuity of the through electrode can be ensured. -22-201010272 Next, a winding electrode forming process is performed. The conductive material is patterned on the upper surface of the base substrate wafer to form a plurality of winding electrodes electrically connected to the through electrodes. At this time, when the two wafers are stacked one after another, the energy can be used. · Winding is formed in such a manner that it is received in the recess formed by the wafer for the cover substrate. pole. In particular, the through electrodes have no recess on the surface as described above, and the surface of the base substrate wafer has almost the same surface. Therefore, a gap is formed between the winding electrodes patterned on the upper surface of the Φ wafer for the base substrate, and the through electrodes are bonded to each other. Thereby, the conductivity between the winding electrode and the through electrode can be made reliable. Next, an installation process is performed in which a plurality of piezoelectric vibrating reeds are bonded to the upper surface of the base substrate wafer via a wraparound electrode. Thereby, each of the piezoelectric vibrating reeds to be joined is in a state in which the through electrodes are electrically connected via the winding electrodes. After the mounting is completed, the superimposing of the wafer for the base substrate and the wafer for the cover substrate is performed. Thereby, the plurality of piezoelectric vibrating pieces to be joined are formed to be housed in the cavity surrounded by the concave portion and the two wafers. status. Next, bonding work of joining the two wafers is performed. Thereby, since the two wafers are firmly adhered, the piezoelectric vibrating piece can be sealed in the cavity. At this time, since the through hole formed in the base substrate wafer is blocked by the through electrode, there is no possibility that the airtightness in the cavity is damaged through the through hole. In particular, since the paste constituting the through electrode is firmly adhered to the inner surface of the through hole, the airtightness in the cavity can be surely maintained. Next, an external electrode forming process is performed in which a conductive material is patterned on the lower surface of the base substrate crystallization crystal -23-201010272 to form a plurality of external electrodes electrically connected to the respective through electrodes. In this case as well, the formation of the wrap-around electrode is the same as that of the underlying wafer, and the through-electrode has almost the same surface. Therefore, the patterned external electrode does not cause a gap or the like. The state in which the through electrodes are in close contact is connected. Thereby, the outside can be made. The conductivity between the electrode and the through electrode is confirmed. By this engineering, an external electrode can be used to actuate the piezoelectric vibrating piece sealed in the cavity. Finally, a cutting process is performed in which the bonded base substrate is replaced with a wafer for a wafer and a lid substrate, and a small number of piezoelectric vibrators are formed. As a result, a plurality of two-layer structures can be manufactured at one time. A surface mount type piezoelectric vibrator that seals a piezoelectric vibrating piece in a cavity formed between a base substrate and a cover substrate that are bonded to each other. In particular, since the surface does not have a recess and the through electrode can be formed in a state in which the base substrate is almost uniform, the through electrode can be surely adhered to the drawn electrode and the external electrode. As a result, the stability of the piezoelectric vibrating piece and the external electrode # can be ensured, and the reliability of the actuating performance can be improved to achieve high quality. Further, since the airtightness in the cavity can be surely maintained, it is also possible to achieve high quality. Further, since the through electrode can be formed by a simple method using a paste, the engineering can be simplified. (7) In the above charging process, the paste may be defoamed and embedded in the through hole. In this case, since the paste is defoamed beforehand, it is possible to fill the paste which does not contain bubbles or the like. Therefore, even if the sintering process is carried out, it is possible to suppress the volume reduction of the paste as much as possible -24-201010272. Therefore, the amount of honing performed later can be reduced, the time taken for honing can be reduced, and the piezoelectric vibrator can be efficiently manufactured. (8) Before the mounting process, the bonding film forming process is performed, and when the wafer for the base substrate and the wafer for the lid substrate are stacked, the bonding film surrounding the periphery of the concave portion is formed on the substrate. On the upper surface of the substrate wafer, φ during the bonding process, the two wafers can be anodically bonded via the bonding film. In this case, since the base substrate wafer and the lid substrate wafer are anodically bonded via the bonding film, the two wafers can be joined more firmly to improve the airtightness in the cavity. Therefore, the piezoelectric vibrating piece can be vibrated with higher precision, and further higher quality can be achieved. (9) In the above mounting work, the piezoelectric vibrating reed may be bump-bonded by a conductive bump. φ In this case, since the bumps are bonded to the piezoelectric vibrating piece, the piezoelectric vibrating piece can be made to float from the upper surface of the base substrate by the thickness of the bump. Therefore, the minimum vibration gap necessary for the vibration of the piezoelectric vibrating piece can be naturally ensured. Therefore, the reliability of the operation performance of the piezoelectric vibrator can be further improved. (10) In the above charging process, a paste containing metal microparticles having a non-spherical shape may be embedded. In this case, since the metal fine particles contained in the paste are not spherical but are formed into a non-spherical shape such as an elongated fibrous shape or a cross-sectional star shape, they are not in point contact when they are in contact with each other, but are easily formed into line contact. Therefore, the electrical conductivity of the through electrode can be further improved from -25 to 201010272. (11) In the above charging process, a paste of granules having a thermal expansion coefficient substantially equal to that of the base substrate wafer may be embedded. In this case, because the paste has a coefficient of thermal expansion mixed with the base substrate. Since the particles are substantially round, the thermal expansion of the paste is brought close to the thermal expansion of the base-substrate wafer during sintering. Therefore, it is difficult to form a gap or the like due to a difference in thermal expansion between the two, and the two can be brought into a more intimate state. As a result, a through electrode having improved airtightness can be formed, and the long-term @tightness reliability can be improved. (12) The piezoelectric vibrator of the present invention is characterized in that: the base substrate is honed on both sides, and the lid substrate is formed with a concave portion for the cavity, and the concave portion faces the base a substrate is bonded to the base substrate; and the piezoelectric vibrating piece is bonded to the base substrate in a state in which the recess is housed in a cavity formed between the base substrate and the cover substrate. The external electrode is formed on the lower surface of the base substrate. The through electrode is formed to be able to penetrate the base substrate, and is electrically connected to the external electrode while maintaining airtightness in the cavity: And a winding electrode formed on the upper surface of the base substrate, the through electrode is electrically connected to the piezoelectric vibrating piece to be joined, and the through electrode is hardened by a paste containing a plurality of metal fine particles Formed. -26-201010272 According to the piezoelectric vibrator of the present invention, it is possible to provide a high-quality two-layer capable of ensuring the airtightness in the cavity while ensuring the stability of the piezoelectric vibrating piece and the external electrode. Structural surface mount type piezoelectric. . Vibrator. (13) The base substrate and the lid substrate may be positively joined via a bonding film formed between the substrates so as to surround the periphery of the concave portion. φ In this case, the same operational effects as those of the piezoelectric vibrator manufacturing method described in the above (8) can be achieved. (14) The piezoelectric vibrating piece described above can be bump-bonded by a conductive bump. In this case, the same operational effects as those of the piezoelectric vibrator manufacturing method described in the above (9) can be achieved. (15) The above metal fine particles may have a non-spherical shape. In this case, the same effect as the Φ manufacturing method of the piezoelectric vibrator described in the above (10) can be achieved. * (16) A granule having a thermal expansion ratio substantially equal to that of the base substrate is mixed in the paste. In this case, the same operational effects as those of the piezoelectric vibrator manufacturing method described in the above (11) can be achieved. (17) In the oscillator of the present invention, the piezoelectric vibrator according to any one of the above (12) to (16) is electrically connected to the integrated circuit as an oscillator. (18) The piezoelectric vibrator according to any one of the above (12) to (16) -27 to 201010272 is electrically connected to the time measuring unit. Further, the piezoelectric vibrator according to any one of the above (12) to (16) is electrically connected to the filter unit. According to the oscillator, the electronic device, and the radio wave clock according to the present invention, since the high-quality piezoelectric vibrator having the airtightness in the cavity and the reliability of the operation is improved, the reliability of the operation can be improved. Seeking high quality. [Effects of the Invention] According to the piezoelectric vibrator of the present invention, it is possible to ensure the airtightness in the cavity and ensure the high stability of the piezoelectric vibrating reed and the external electrode. A layer-structured surface mount type piezoelectric vibrator. Moreover, according to the method for manufacturing a piezoelectric vibrator of the present invention, the piezoelectric vibrator can be efficiently manufactured at one time, and further, the cost can be reduced, and the oscillator, the electronic device, and the radio wave clock according to the present invention can be used. Since the piezoelectric vibrator described above is provided, the reliability of the operation can be improved in the same manner to achieve high quality. [Embodiment] (First embodiment) Hereinafter, a first embodiment of the present invention will be described with reference to Figs. 1 to 2, and a piezoelectric vibrator 1 of the present embodiment is as shown in Figs. 1 to 4 A surface-mounted piezoelectric vibration in which the piezoelectric vibrating reed 4 is housed in the internal cavity C is formed in a box shape in which the base substrate 2 and the lid substrate 3 are stacked in two layers. . Mover. Further, in FIG. 4, in order to facilitate the drawing of the drawing, the excitation electrode 15, the extractor electrodes 19, 20, the mount electrodes 16, 17 and the overlapping metal film 21 which will be described later are omitted. Show. As shown in Figs. 5 to 7, the piezoelectric vibrating reed 4 is a tuning-fork type vibrating piece formed of a piezoelectric material such as crystal, lithium molybdate or lithium niobate, and vibrates when a predetermined voltage is applied. The piezoelectric vibrating reed 4 includes a pair of vibrating arms 10 and 11 arranged in parallel, a base portion 12 on the proximal end side of the pair of vibrating arms 10 and 11 integrally fixed, and a pair of vibrating arms. The excitation electrodes 15 composed of the first excitation electrode 13 and the φ 2 excitation electrode 14 vibrating the pair of vibration arms 10 and 11 on the outer surfaces of the portions 10 and 11 and electrically connected to the first * The mounting electrodes 16 and 17 of the excitation electrode 13 and the second excitation electrode 14 are provided. Further, the piezoelectric vibrating reed 4 of the present embodiment includes the groove portion 18 formed on each of the main surfaces of the pair of vibrating arms 10 and 11 along the longitudinal direction of the vibrating arms 10 and 11. The groove portion 18 is formed from the proximal end side of the vibrating arms 1A and U to the substantially intermediate portion. The excitation electrode 15 composed of the first excitation electrode 13 and the second excitation electrode 14 is an electrode that vibrates the pair of vibration arms 10 and 11 at a predetermined resonance frequency in a direction approaching or separating from each other. The outer surfaces of the vibrating arms -29-201010272 10 and 11 are formed by being patterned in a state of being electrically separated. Specifically, as shown in FIG. 7, the first excitation electrode 13 is mainly formed on the groove portion 18 of one of the vibration arm portions 1A and on both sides of the other vibration arm portion 11, and the second excitation electrode 14 is mainly The groove portion 18 formed on both side surfaces of one of the vibrating arm portions 10 and the other vibrating arm portion 11 . on. Further, as shown in FIGS. 5 and 6, the first excitation electrode 13 and the second excitation electrode 14 are electrically connected to the mounting electrodes 16 and 17 via the pull-out electrodes 19 0 and 20 on both main surfaces of the base portion 12, respectively. . Then, the piezoelectric vibrating reed 4 can apply a voltage via the mounting electrodes 16, 17. Further, the excitation electrode 15, the mount electrodes 16, 17 and the pull-out electrodes 19, 20 described above are, for example, a film of a conductive film made of chromium (Cr), nickel (Ni), aluminum (A1) or titanium (Ti). Come form. The front end of the pair of vibrating arms 10 and 11 is covered with an overlapping metal film 21 for adjustment (frequency adjustment) so that its own vibration state can vibrate within a predetermined frequency range. Further, the superposed metal film 21 is divided into a coarse adjustment film 21a used when the frequency is coarsely adjusted, and a fine adjustment film 21b used when the frequency is finely adjusted. When the coarse adjustment film 21a and the fine adjustment film 21b are used for frequency adjustment, the frequencies of the pair of vibration arms 10 and 11 can be set within the range of the nominal frequency of the device. As shown in Figs. 3 and 4, the piezoelectric vibrating reed 4 configured as described above is bump-bonded on the upper surface of the base substrate 2 by bumps P such as gold. More specifically, on the two bumps P formed on the winding electrodes 36 and 37 which are patterned on the upper surface of the base substrate 2, the pair of mounting electrodes 16 and 17 are respectively in contact with each other -30-201010272 Bump joints. Thereby, the piezoelectric vibrating reed 4 is supported in a state of being floated from the upper surface of the base substrate 2, and the mounting electrodes 16, 17 and the winding electrodes 36, 37 are electrically connected to each other. . The cover substrate 3 is a transparent insulating substrate made of a glass material such as soda lime glass, and is formed into a plate shape as shown in FIGS. 1 , 3 and 4 . Then, a rectangular recessed portion 3a accommodating the piezoelectric vibrating reed 4 is formed on the joint surface side of the bonded base substrate 2. The concave portion 3a is a cavity recess for accommodating the cavity C of the piezoelectric vibrating reed 4 when the two substrates 2 and 3 are superposed on each other. Further, the lid substrate 3 is anodically bonded to the base substrate 2 in a state in which the concave portion 3a faces the base substrate 2 side. The base substrate 2 is a transparent insulating substrate made of a glass material, for example, soda lime glass, similarly to the lid substrate 3, and as shown in FIGS. 1 to 4, a plate shape is formed so as to overlap the lid substrate 3. . A pair of through holes 30 and 31 penetrating the base substrate 2 are formed on the base substrate 2. At this time, the pair of through holes 30 and 31 are formed so as to be receivable in the cavity C by Φ. More specifically, in the through holes 30 and 31 of the present embodiment, the one through hole 30 is formed on the side of the base portion 12 of the piezoelectric vibrating reed 4 to be mounted, and the other through hole 3 1 is located on the vibrating arm portion 1 , the front end side of 1 1 . In the present embodiment, a straight through hole penetrating straight through the base substrate 2 will be described as an example. However, the present invention is not limited thereto, and a tapered through hole having a tapered shape toward the lower surface of the base substrate 2 may be used. . In any case, it is sufficient to penetrate the base substrate 2. Then, a pair of through electrodes 32 and 33 which are formed so as to be able to bury the through holes 30 and 31 are formed in the pair of through holes 30 and 31. As shown in Fig. 31-2010-10272, the through electrodes 32 and 33 are formed by hardening the paste P containing the plurality of metal fine particles P1, and the through holes 30 and 31 are completely blocked to maintain the cavity C. At the same time as the airtightness, the external electrodes 38 and 39, which will be described later, are brought into conduction with the winding electrodes 36 and 37. In addition, the through electrodes 32 and 33 are in contact with each other in the plurality of gold-based fine particles P1 contained in the paste P to ensure electrical continuity. In addition, the metal fine particles P1 of the present embodiment will be described by taking an example of forming a slender fibrous shape (non-spherical shape) by copper or the like. @ On the upper surface side of the base substrate 2 (the joint surface side to which the lid substrate 3 is bonded), as shown in FIGS. 1 to 4, the bonding film 35 for anodic bonding and one of the conductive materials (for example, aluminum) are used. The pair of pull electrodes 36, 37 are patterned. The bonding film 35 is formed along the periphery of the base substrate 2 so as to be able to surround the recess 3a formed on the lid substrate 3.

一對的繞拉電極36、37是被圖案化成可電性連接一對的貫通電極32、33中一方的貫通電極32與壓電振動片 4的一方的安裝電極16，及電性連接另一方的貫通電極33 Q 與壓電振動片4的另一方的安裝電極17。若更詳細說明， ‘ 則一方的繞拉電極36是以能夠位於壓電振動片4的基部 12的正下方之方式形成於一方的貫通電極32的正上方。又，另一方的繞拉電極37是從鄰接於一方的繞拉電極36 的位置來沿著振動腕部1〇、11而被繞拉至該振動腕部1〇、11的前端側之後，以能夠位於另一方的貫通電極33的正上方之方式形成。然後，在該等一對的繞拉電極36、37上分別形成有 -32- 201010272 凸塊B，利用此凸塊B來安裝壓電振動片4。藉此，壓電振動片4的一方的安裝電極16可經由一方的繞拉電極36 來導通至一方的貫通電極32，另一方的安裝電極17可經 / 由另一方的繞拉電極37來導通至另一方的貫通電極33。 . 在基底基板2的下面，如圖1、圖3及圖4所示，形成有對於一對的貫通電極32、33分別電性連接的外部電極38、39。亦即，一方的外部電極38是經由一方的貫通 φ 電極32及一方的繞拉電極36來電性連接至壓電振動片4 的第1激發電極13。又，另一方的外部電極39是經由另一方的貫通電極33及另一方的繞拉電極37來電性連接至壓電振動片4的第2激發電極14。在使如此構成的壓電振動子1作動時，是對形成於基底基板2的外部電極38、39施加預定的驅動電壓。藉此，可在由壓電振動片4的第1激發電極13及第2激發電極14所構成的激發電極15流動電流，可使一對的振動腕 φ 部1〇、11在令接近•離間的方向以預定的頻率振動。然 • 後，利用此一對的振動腕部1 〇、1 1的振動，可作爲時刻源、控制訊號的時序源或參考訊號源等加以利用。其次，一邊參照圖9所示的流程圖，一邊在以下說明有關利用基底基板用晶圓40及蓋體基板用晶圓50來一次製造複數個上述壓電振動子1的製造方法。首先，進行壓電振動片製作工程，製作圖5〜圖7所示的壓電振動片4(S10)。具體而言，首先，以預定的角度切割水晶的朗伯原石，而成爲一定厚度的晶圓。接著 -33- 201010272 ，面磨此晶圓而粗加工後，以蝕刻來去除加工變質層，然後進行磨光劑等的鏡面硏磨加工，而成爲預定厚度的晶圓。接著，對晶圓實施洗淨等適當的處理後，藉由光微影技術以壓電振動片4的外形形狀來使晶圓圖案化，且進行金屬膜的成膜及圖案化，而形成激發電極15、拉出電極19 . 、20、安裝電極16、17、重疊金屬膜21。藉此，可製作複數的壓電振動片4。並且，在製作壓電振動片4後，進行共振頻率的粗調 @ 。此是對重疊金屬膜21的粗調膜21a照射雷射光而使一部分蒸發，令重量變化下進行。另外，有關更高精度調整共振頻率的微調是在安裝後進行。對於此會在往後說明。其次，進行第1晶圓製作工程（S20)，其係將之後形成蓋體基板3的蓋體基板用晶圓50製作至即將進行陽極接合之前的狀態。首先，將鈉鈣玻璃硏磨加工至預定的厚度而洗淨後，如圖1〇所示，形成藉由蝕刻等來除去最表面的加工變質層之圓板狀的蓋體基板用晶圓50 (S21) φ 。其次，進行凹部形成工程（S22 )，其係於蓋體基板用 ’ 晶圓50的接合面，藉由蝕刻等在行列方向形成複數個空腔用的凹部3 a。在此時間點，完成第1晶圓製作工程。其次，進行第2晶圓製作工程（S30)，其係以和上述工程同時或前後的時序，將之後形成基底基板2的基底基板用晶圓40製作至即將進行陽極接合之前的狀態。首先，將鈉鈣玻璃硏磨加工至預定的厚度而洗淨後，形成藉由鈾刻等來除去最表面的加工變質層之圓板狀的基底基板 -34- 201010272 用晶圓40(S31)。其次，進行貫通電極形成工程（S30A )，其係於基底基板用晶圓40形成複數個一對的貫通電極32、33。在此詳細說明有關此貫通電極形成工程。 • 首先，如圖11所示，進行保持孔形成工程（S32) ’ . 其係爲了保持膏P，而將有底穴狀的一對保持孔30a、31a 複數形成於基底基板用晶圓40的上面側。另外’圖11所示的點線Μ是表示以之後進行的切斷工程所切斷的切斷線 φ 。在進行此工程時，從基底基板用晶圓40的上面側，例如以噴沙法進行。藉此，如圖12所示’可形成朝基底基板用晶圓40的下面漸漸縮徑的剖面錐狀’且在下面側具有底的有底穴狀的保持孔3 0a、31a。又’之後疊合兩晶圓 40、50時，以能夠收於蓋體基板用晶圓50所形成的凹部 3a內之方式形成複數個一對的保持孔30a、31a。而且，形成一方的保持孔30a會位於壓電振動片4的基部12側，另一方的保持孔31a會位於振動腕部1〇、Η的前端側 • 另外，本實施形態是舉朝基底基板用晶圓40的下面漸漸縮徑的剖面錐狀的保持孔爲例進行說明’但並非限於此情況，即使是設成直徑均一的保持孔也無妨。無論如何，只要是在基底基板用晶圓40的下面側具有底的有底狀的保持孔即可。接著，如圖13所示，進行充塡工程（S33) ’其係於該等複數的保持孔30a、31a內無間隙埋入膏而阻塞保持孔30a、31a。此時，由於保持孔30a、31a爲形成有底穴 -35- 201010272 狀，因此膏p得埋入作業容易，可謀求工程得簡素化。加上，無浪費使用膏P之虞。接著，進行燒結工程，其係於暫時燒結充塡的膏P後正式燒結而使硬化。具體而言，首先暫時燒結埋入的膏P(S34)。暫時燒結的加熱條件， - 較理想是例如80°C，30分鐘程度。 . 可是，藉由暫時燒結而硬化的膏P是在暫時燒結時，未圖示的膏P內的大部分的有機物會蒸發，因此如圖14 所示，相較於充塡工程時，體積會減少。因此，在膏P的 @ 表面，無論如何也會產生凹陷。於是，在進行正式燒結前，將相當於暫時燒結時減少的胥量之新的膏P補充至暫時燒結後的膏P(S35)。藉此，在凹陷的部分會被充塡新的膏P，因此如圖15所示，表面會形成平坦。然後，在膏P的補充終了後，爲了防止所被補充的膏 P內部的有機物在正式燒結時急劇地蒸發，而再度暫時燒結膏P全體（S36 )。在此暫時燒結終了後，進行膏P全體的正式燒結（S37)。正式燒結的加熱溫度，較理想是 0 例如400°C〜5 00 °C程度。藉此，被暫時燒結的膏Ρ及新 ‘ 補充的膏P會完全硬化而形成一體化的狀態，且形成牢固地黏著於保持孔30a、31a的內面之狀態。藉由進行膏P 的暫時燒結及正式燒結，完成燒結工程。可是，被正式燒結的膏P內，在充塡工程被埋入的膏 P是在最初的暫時燒結時已經大部分的有機物蒸發，因此膏P補充後的暫時燒結及正式燒結時體積幾乎不會減少。另一方面，最初的暫時燒結後所被補充的新的膏P，雖會 -36- 201010272 因爲膏p補充後的暫時燒結及正式燒結而體積減少，但膏 P的量本身與保持孔30a、31a內的膏P的全體量作比較，極微量。因此，在暫時燒結及正式燒結新的膏P之下減少 / 的體積給予全體的膏P的體積的影響，可無視程度的小。 - 因此，即使考慮新補充的膏P的體積減少，在正式燒結硬化的膏P的表面也不會有大的凹陷。亦即，在基底基板用晶圓40的上面，基底基板用晶圓40的表面與硬化的膏P φ 的表面，如圖16所示，幾乎形成面一致的狀態。然後，在燒結工程後，進行硏磨工程，其係將基底基板用晶圓40的兩面分別硏磨預定的厚度。更具體而言，如圖17所示，進行上面硏磨工程（S38)，其係將基底基板用晶圓40的上面只硏磨預定的厚度。藉由進行此工程，在基底基板用晶圓40的上面，連藉由正式燒結而硬化的膏P也可同時硏磨。因此，亦可消去膏P的些微凹陷的部分的周圍。亦即，如圖18所示，可使硬化的膏P的表 9 面更爲平坦。藉此，基底基板用晶圓40的表面與硬化的 * 膏p的表面會形成更面一致的狀態。更以和上面硏磨工程同時或前後的時序，如圖17所示，實施將基底基板用晶圓40的下面硏磨至到達保持孔 30a、31a的底爲止的下面硏磨工程（S39)。藉此，如圖 18所示，在保持孔30a、31a內硬化的膏P會露出於下面。藉由進行此下面硏磨工程，形成於基底基板用晶圓40 之一對的保持孔30a、31a會之後形成貫通基底基板用晶圓40的通孔30、31，且硬化的膏P會形成一對的貫通電 -37- 201010272 極32、33。並且，在基底基板用晶圓40的下面，基底基板用晶圓40的表面與硬化的膏P的表面也會幾乎形成面一致的狀態。藉由進行該等上面硏磨工程及下面硏磨工程，完成硏磨工程。然後，藉由進行硏磨工程，完成貫通電 \ 極形成工程。 -The pair of winding electrodes 36 and 37 are patterned to electrically connect one of the through electrodes 32 and 33 and one of the mounting electrodes 16 of the piezoelectric vibrating reed 4, and electrically connected to the other side. The through electrode 33 Q and the other mounting electrode 17 of the piezoelectric vibrating reed 4 are provided. More specifically, the one winding electrode 36 is formed directly above one of the through electrodes 32 so as to be positioned directly below the base portion 12 of the piezoelectric vibrating reed 4 . Further, the other winding electrode 37 is wound around the front end sides of the vibrating arms 1A and 11 along the vibrating arms 1A and 11 from a position adjacent to one of the pulling electrodes 36. It can be formed so as to be located directly above the other through electrode 33. Then, a bump B of -32 - 201010272 is formed on each of the pair of winding electrodes 36, 37, and the piezoelectric vibrating reed 4 is mounted by the bump B. Thereby, one of the mounting electrodes 16 of the piezoelectric vibrating reed 4 can be electrically connected to one of the through electrodes 32 via one of the winding electrodes 36, and the other mounting electrode 17 can be electrically connected to/from the other of the pulling electrodes 37. To the other through electrode 33. On the lower surface of the base substrate 2, as shown in Figs. 1, 3, and 4, external electrodes 38 and 39 which are electrically connected to the pair of through electrodes 32 and 33, respectively, are formed. In other words, one of the external electrodes 38 is electrically connected to the first excitation electrode 13 of the piezoelectric vibrating reed 4 via one of the through-φ electrodes 32 and one of the wrap electrodes 36. Further, the other external electrode 39 is electrically connected to the second excitation electrode 14 of the piezoelectric vibrating reed 4 via the other through electrode 33 and the other winding electrode 37. When the piezoelectric vibrator 1 thus constructed is actuated, a predetermined driving voltage is applied to the external electrodes 38, 39 formed on the base substrate 2. Thereby, a current can flow through the excitation electrode 15 composed of the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4, and the pair of vibrating arms φ 1 and 11 can be brought close to each other. The direction of vibration vibrates at a predetermined frequency. Then, the vibration of the pair of vibration arms 1 〇 and 1 1 can be used as a time source, a timing source of the control signal, or a reference signal source. Next, a method of manufacturing a plurality of the piezoelectric vibrators 1 by using the base substrate wafer 40 and the lid substrate wafer 50 will be described below with reference to the flowchart shown in FIG. First, the piezoelectric vibrating reed manufacturing process is performed, and the piezoelectric vibrating reed 4 shown in Figs. 5 to 7 is produced (S10). Specifically, first, the rough Lambert stone of the crystal is cut at a predetermined angle to become a wafer having a certain thickness. Then, from -33 to 201010272, the wafer is rough-machined, and the affected layer is removed by etching, and then mirror-honed by a polishing agent or the like to form a wafer having a predetermined thickness. Then, after the wafer is subjected to an appropriate treatment such as cleaning, the wafer is patterned by the external shape of the piezoelectric vibrating reed 4 by photolithography, and the metal film is formed and patterned to form an excitation. The electrode 15, the extraction electrodes 19, 20, the mounting electrodes 16, 17 and the overlapping metal film 21. Thereby, a plurality of piezoelectric vibrating reeds 4 can be produced. Further, after the piezoelectric vibrating reed 4 is fabricated, a coarse adjustment of the resonance frequency is performed. This is performed by irradiating the coarse adjustment film 21a of the overlapping metal film 21 with the laser light and evaporating a part thereof under the weight change. In addition, the fine adjustment of the resonance frequency with higher precision is performed after installation. This will be explained later. Then, the first wafer fabrication process (S20) is performed, and the wafer 50 for the lid substrate on which the lid substrate 3 is formed is formed immediately before the anode bonding. First, after the soda-lime glass is honed to a predetermined thickness and washed, as shown in FIG. 1A, a disk-shaped cover substrate wafer 50 in which the outermost processed layer is removed by etching or the like is formed. (S21) φ. Then, a concave portion forming process (S22) is performed on the joint surface of the wafer substrate 50 for the lid substrate, and a plurality of recesses 3a for the cavity are formed in the row and direction by etching or the like. At this point in time, the first wafer fabrication project was completed. Then, the second wafer fabrication process (S30) is performed, and the base substrate wafer 40 on which the base substrate 2 is formed is formed in a state immediately before the anodic bonding, at the same time as or before and after the above-described process. First, the soda-lime glass is honed to a predetermined thickness and washed, and then a disk-shaped base substrate-34-201010272 wafer 40 is removed by uranium engraving or the like to remove the outermost process-affected layer (S31). . Next, a through electrode forming process (S30A) is performed to form a plurality of pairs of through electrodes 32 and 33 on the base substrate wafer 40. This through electrode formation process will be described in detail herein. • First, as shown in FIG. 11, a holding hole forming process (S32)' is performed. In order to hold the paste P, a pair of bottom-shaped holding holes 30a and 31a are formed in the base substrate wafer 40. Upper side. Further, the dotted line ’ shown in Fig. 11 indicates the cutting line φ cut by the cutting process performed later. In carrying out this process, the upper surface side of the base substrate wafer 40 is, for example, sandblasted. Thereby, as shown in Fig. 12, a cross-sectional tapered shape which is gradually reduced in diameter toward the lower surface of the base substrate wafer 40 and a bottomed pit-shaped holding hole 30a, 31a on the lower surface side can be formed. Further, when the two wafers 40 and 50 are stacked one after another, a plurality of pairs of holding holes 30a and 31a are formed so as to be able to be received in the recessed portion 3a formed by the cover substrate wafer 50. Further, the one holding hole 30a is located on the base portion 12 side of the piezoelectric vibrating reed 4, and the other holding hole 31a is located on the front end side of the vibrating arm portion 1A and Η. In addition, in the present embodiment, the base substrate is used for the base substrate. The tapered tapered holding hole of the lower surface of the wafer 40 which is gradually reduced in diameter is described as an example. However, the present invention is not limited thereto, and it is also possible to provide a holding hole having a uniform diameter. In any case, it may be a bottomed holding hole having a bottom on the lower surface side of the base substrate wafer 40. Then, as shown in Fig. 13, the charging process (S33) is performed in which the pastes are buried in the plurality of holding holes 30a and 31a without gaps, and the holding holes 30a and 31a are blocked. At this time, since the holding holes 30a and 31a are formed in the shape of the bottom hole -35-201010272, it is easy to embed the paste p, and the construction can be simplified. Add, no waste is used after the paste P. Next, a sintering process is performed in which the paste P is temporarily sintered and then sintered to be hardened. Specifically, the embedded paste P (S34) is first temporarily sintered. The heating condition for the temporary sintering, - preferably, for example, 80 ° C, is about 30 minutes. However, when the paste P hardened by temporary sintering is temporarily sintered, most of the organic matter in the paste P (not shown) evaporates, so as shown in Fig. 14, the volume is compared with that of the filling process. cut back. Therefore, on the @ surface of the paste P, a depression is generated anyway. Then, before the main sintering, a new paste P corresponding to the amount of enthalpy reduced during the temporary sintering is added to the paste P after the temporary sintering (S35). Thereby, a new paste P is filled in the depressed portion, so that the surface is flat as shown in Fig. 15. Then, after the completion of the replenishment of the paste P, in order to prevent the organic substance inside the paste P to be rapidly evaporated during the main sintering, the entire paste P is once again burned (S36). After the temporary sintering is completed, the entire sintering of the paste P is performed (S37). The heating temperature of the main sintering is preferably 0, for example, about 400 ° C to 500 ° C. Thereby, the temporarily sintered paste and the new "supplemented paste P" are completely cured to form an integrated state, and are formed in a state of being firmly adhered to the inner faces of the holding holes 30a, 31a. The sintering process is completed by temporarily sintering and officially sintering the paste P. However, in the paste P which is formally sintered, the paste P which is embedded in the filling process is mostly evaporated at the time of the initial temporary sintering, so that the volume of the temporary sintering and the main sintering after the paste P is almost impossible. cut back. On the other hand, the new paste P which is replenished after the initial temporary sintering may be reduced in size from -36 to 201010272 due to temporary sintering and main sintering after the replenishment of the paste p, but the amount of the paste P itself and the holding hole 30a, The total amount of the paste P in 31a is compared, and it is extremely small. Therefore, the effect of reducing the volume under the temporary sintering and the main sintering of the new paste P to the volume of the entire paste P can be ignored to a small extent. - Therefore, even if the volume of the newly added paste P is reduced, there is no large depression on the surface of the paste S which is hardened by the main sintering. In other words, on the upper surface of the base substrate wafer 40, the surface of the base substrate wafer 40 and the surface of the cured paste P φ are almost in the same state as shown in Fig. 16 . Then, after the sintering process, a honing process is performed which hones the base substrate for both sides of the wafer 40 by a predetermined thickness. More specifically, as shown in Fig. 17, the above honing process (S38) is performed by honing only the upper surface of the base substrate wafer 40 with a predetermined thickness. By performing this process, the paste P which is hardened by the main sintering can be simultaneously honed on the upper surface of the base substrate wafer 40. Therefore, it is also possible to eliminate the periphery of the slightly recessed portion of the paste P. That is, as shown in Fig. 18, the surface of the hardened paste P can be made flatter. Thereby, the surface of the base substrate wafer 40 and the surface of the cured paste p are in a more uniform state. Further, as shown in Fig. 17, the lower surface of the base substrate wafer 40 is honed to the lower honing process until the bottom of the holding holes 30a and 31a is completed (S39). Thereby, as shown in Fig. 18, the paste P hardened in the holding holes 30a, 31a is exposed to the lower surface. By performing the honing process below, the holding holes 30a and 31a formed in one of the pair of base substrate wafers 40 are formed with through holes 30 and 31 penetrating the base substrate wafer 40, and the cured paste P is formed. A pair of through-electric -37- 201010272 pole 32,33. Further, on the lower surface of the base substrate wafer 40, the surface of the base substrate wafer 40 and the surface of the cured paste P are almost in the same state. The honing work is completed by performing the above honing works and the following honing works. Then, through the honing process, the through-hole forming process is completed. -

其次，在基底基板用晶圓40的上面使導電性材料圖案化，如圖19及圖20所示，進行形成接合膜35的接合膜形成工程（S40 )，且進行形成複數個繞拉電極36、37 Q 的繞拉電極形成工程（S41)，該繞拉電極36、37是分別電性連接至各一對的貫通電極32、33。另外，圖19及圖 20所示的點線Μ是表示以之後進行的切斷工程所切斷的切斷線。特別是貫通電極32、33如上述般對基底基板用晶圓 40的上面幾乎形成面一致的狀態。因此，在基底基板用晶圓40的上面被圖案化的繞拉電極36、37是之間不使產生間隙等，以對貫通電極3 2、3 3密合的狀態連接。藉此， ® 可使一方的繞拉電極36與一方的貫通電極32的導通性、 ‘ 及另一方的繞拉電極37與另一方的貫通電極33的導通性成爲確實者。在此時間點完成第2晶圓製作工程。可是就圖9而言，是在接合膜形成工程（S40)之後，進行繞拉電極形成工程（S4 1 )的工程順序，但相反的，在繞拉電極形成工程（S4 1)之後，進行接合膜形成工程（S40)也無妨，或同時進行兩工程也無妨。無論哪個工程順序，皆可實現同一的作用效果。因此，即使因應所 -38- 201010272 需.來適當變更工程順序也無妨。其次，進行將製作後的複數個壓電振動片4分別經由繞拉電極36、37來接合於基底基板用晶圓40的上面之安 ,· 裝工程（S50)。首先，在一對的繞拉電極36、37上分別 • 形成金等的凸塊B。然後，將壓電振動片4的基部12載置於凸塊B上之後，一邊將凸塊B加熱至預定溫度，一邊將壓電振動片4推擠至凸塊B。藉此，壓電振動片4會被 φ 凸塊B機械性地支持，且安裝電極16、17與繞拉電極36 、37會形成電性連接的狀態。因此，在此時間點，壓電振動片4的一對激發電極15是形成對一對的貫通電極32、 3 3分別導通的狀態。特別是因爲壓電振動片4被凸塊接合，所以是在從基底基板用晶圓40的上面浮起的狀態下被支持。在壓電振動片4的安裝終了後，進行對基底基板用晶圓40疊合蓋體基板用晶圓50的疊合工程（S60)。具體 φ 而言，一邊將未圖示的基準標記等作爲指標，一邊將兩晶 * 圓40、50對準於正確的位置。藉此，所被安裝的壓電振動片4會形成被收容於以形成於基底基板用晶圓40的凹部3a與兩晶圓40、50所包圍的空腔C內之狀態。疊合工程後，進行接合工程（S70)，其係將疊合的 2片晶圓40、50放入未圖示的陽極接合裝置，在預定的溫度環境施加預定的電壓而陽極接合。具體而言，在接合膜 35與蓋體基板用晶圓50之間施加預定的電壓。於是，在接合膜35與蓋體基板用晶圓50的界面產生電氣化學的反 -39- 201010272 應，兩者會分別牢固地密合而被陽極接合。藉此，可將壓電振動片4密封於空腔C內，可取得基底基板用晶圓40 與蓋體基板用晶圓50接合之圖21所示的晶圓體60。另外，在圖21中，爲了容易看圖面，圖示分解晶圓體60的狀態，自基底基板用晶圓40省略接合膜35的圖示。並且，圖21所示的點線Μ是表示以之後進行的切斷工程所切斷的切斷線。可是在進行陽極接合時，形成於基底基板用晶圓40 的通孔30、31是被貫通電極32、33所完全阻塞，因此不會有空腔C內的氣密經通孔3 0、3 1而受損的情形。特別是藉由燒結，筒體6與芯材部7會被一體地固定，且該等會對通孔30、31牢固地黏著，因此可確實地維持空腔C 內的氣密。然後，上述陽極接合終了後，進行外部電極形成工程 (S 80)，其係於基底基板用晶圓40的下面將導電性材料圖案化，形成複數個分別電性連接至一對的貫通電極32、 33之一對的外部電極38、39。藉由此工程，可利用外部電極38、39來使被密封於空腔C內的壓電振動片4作動〇特別是進行此工程時也是與繞拉電極36、37的形成時同樣，對基底基板用晶圓40的下面，貫通電極32、33 是幾乎形成面一致的狀態，因此被圖案化的外部電極38、 39是之間不使間隙等發生，以對貫通電極32、33密合的狀態連接。藉此，可使外部電極38、39與貫通電極32、 201010272 33的導通性成爲確實者。其次，進行微調工程（S90) ’其係於晶圓體60的狀態，微調被密封於空腔c內的各個壓電振動子1的頻率’ .· 收於預定的範圍內。具體說明，是對形成於基底基板用晶 - 圓40的下面之一對的外部電極38、39施加電壓，而使壓電振動片4振動。然後，一邊計測頻率，一邊通過蓋體基板用晶圓50從外部照射雷射光，使重疊金屬膜21的微調 φ 膜21b蒸發。藉此，一對的振動腕部10、11的前端側的重量會變化，因此可將壓電振動片4的頻率微調成收於標稱頻率的預定範圍內。頻率的微調終了後，進行切斷工程（S100) ’其係沿著圖21所示的切斷線Μ來切斷所被接合的晶圓體60而小片化。其結果，可一次製造複數個圖1所示的2層構造式表面安裝型的壓電振動子1，其係於被互相接合的基底基板2與蓋體基板3之間形成的空腔C內密封壓電振動片4 * 另外，即使是進行切斷工程（S100)而使各個的壓電振動子1小片化後，進行微調工程（S90 )的工程順序也無妨。但，如上述般，先進行微調工程（S90)下，可在晶圓體60的狀態下進行微調，因此可更有效率地微調複數的壓電振動子1。因此可謀求總生產能力的提升，較理想。然後，進行內部的電氣特性檢査（S 1 1 0 )。亦即，測定壓電振動片4的共振頻率、共振電阻値、驅動電平特性 -41 - 201010272 (共振頻率及共振電阻値的遍發電力依存性）等而檢查》並且，一倂檢查絕緣電阻特性等。然後，最後進行壓電振動子1的外觀檢査，而最終檢査尺寸或品質等。藉此完成壓電振動子1的製造。 · 特別是本實施形態的壓電振動子1是可在對基底基板 . 2幾乎面一致的狀態下形成貫通電極32、33，因此可使貫通電極32、33對繞拉電極36、37及外部電極38、39確實地密合。其結果，可確保壓電振動片4與外部電極38、 φ 39的安定導通性，可提升作動性能的可靠度而謀求高性能化。又，由於有關空腔C內的氣密也可確實地維持，因此此點也可謀求高品質化。又，由於可藉由利用膏P的簡單方法來形成貫通電極32、33，因此可謀求工程的簡素化。又，若根據本實施形態的製造方法，則可一次製造複數個上述壓電振動子1，因此可謀求低成本化。更在硏磨工程時，只要除去底座部8即可，因此與硏磨基底基板用晶圓40的兩面時作比較，可在短時間實施 _ 硏磨工程。 · 更在硏磨工程中，特別是下面硏磨工程時，是不依燒結時減少的膏P的體積，而是可根據基底基板用晶圓40 的厚度及保持孔30a、31a的深度來設定硏磨量。亦即，只要硏磨至到達保持孔3 0a、31a的底爲止即可。因此，不必確認膏P的狀態後進行硏磨，只要硏磨預先決定的量即可。因此，可防止硏磨不足或過度的硏磨。並且，在暫時燒結後補充膏P之後進行正式燒結，可 -42- 201010272 縮小膏P的表面的凹陷。因此，在硏磨工程中，特別是上面硏磨工程時，基底基板用晶圓40的硏磨量極些微便可。藉此，可縮短硏磨工程所要的時間，謀求壓電振動子1 ，的製造工程的高效率化。 . 加上，藉由在上述正式燒結後實施硏磨工程，可更硏磨與硬化的膏P的表面幾乎處於面一致的狀態之基底基板用晶圓40的表面。藉此，可使基底基板用晶圓40的表面 φ 與硬化的膏p的表面更形成面一致的狀態。 (第2實施形態）以下，參照圖22〜圖25來說明本發明的第2實施形態。另外，在此第2實施形態中，對於與第1實施形態的構成要素相同的部分附上同樣的符號，省略其說明。第2實施形態與第1實施形態是有關製造方法的貫通電極形成工程的作業順序不同。亦即，第1實施形態是在 φ 暫時燒結在充塡工程所被埋入的育P之後緊接著補充新的 * 膏P而再度進行暫時燒結，然後，在正式燒結之後實施硏磨工程，但第2實施形態是在暫時燒結在充塡工程所被埋入的膏P之後緊接著實施硏磨工程，然後進行正式燒結。以下，一邊參照顯示圖22所示本發明的第2實施形態的製造方法的流程圖，一邊特別說明有關本實施形態的貫通電極形成工程（S30B )。在本實施形態的貫通電極形成工程中，至暫時燒結在充塡工程所被埋入的膏P爲止是與第1實施形態同様地進 -43- 201010272 行。在暫時燒結在充塡工程所被埋入的膏p之後，會在膏 p的表面產生凹陷。於是，在進行此暫時燒結後，緊接著進行將基底基板用晶圓40的兩面分別硏磨預定的厚度之 \ 硏磨工程。亦即，如圖23所示，進行上面硏磨工程及下 · 面硏磨工程，該上面硏磨工程是將基底基板用晶圓40的上面只硏磨預定的厚度，該下面硏磨工程是將基底基板用晶圓40的下面硏磨至到達保持孔30a、31a的底爲止。藉 e 此，如圖24所示般，保持孔30a、31a會形成通孔30 ' 31 。加上，可削去膏P的凹陷部分的周圍，因此基底基板用晶圓40的表面與暫時燒結後的膏P的表面會幾乎形成面一致的狀態。並且，此暫時燒結的膏P的體積的減少量，相較於不暫時燒結而1次正式燒結時小。因此，隨暫時燒結而產生的膏P表面的凹陷，要比不暫時燒結同量的膏P而1次正式燒結時產生的凹陷更小。因此，藉由在暫時燒結膏P後 b 緊接著進行硏磨工程，可壓低硏磨量，特別是可縮短上面硏磨所要的時間》藉由進行該等上面硏磨工程及下面硏磨工程，完成硏磨工程。然後’在進行硏磨工程後’藉由進行正式燒結來使膏 P完全硬化。藉此’膏P會形成牢固地黏著於通孔30、31 的內面之狀態，胥P是具有作爲貫通電極32、33的機能。又’因爲在暫時燒結時膏P內的大部分的有機物已蒸發 -44 - 201010272 ，所以正式燒結的體積的減少極些微。因此，基底基板用晶圓40的表面與硬化的膏P的表面是維持與進行正式燒結前幾乎同様面一致的狀態。藉由此正式燒結，完成貫通電極形成工程。 ^ 若根據本實施形態的製造方法，則除了實現第1實施形態所示的作用效果以外還藉由暫時燒結在充塡工程所被埋入的膏P之後緊接著進行上面硏磨工程，與不暫時燒結 φ 在1次正式燒結之後緊接著進行硏磨工程時作比較，可縮短硏磨工程所要的時間。 (第3實施形態）以下，參照圖26〜圖44來說明本發明的第3實施形態。本實施形態的壓電振動子101是如圖26〜圖29所示 ’形成以基底基板102及蓋體基板103來積層成2層的箱 0 狀，在內部的空腔c內收納有壓電振動片104的表面安裝 . 型的壓電振動子101。另外，在圖29中，爲了容易看圖面，而省略後述的激發電極 115、拉出電極（extractor electrode) 119、120 、安裝電極（mount electrode) 116、117及重疊金屬膜 1 21的圖示。如圖30〜圖32所示，壓電振動片1〇4是由水晶、钽酸鋰或鈮酸鋰等壓電材料所形成的音叉型的振動片，在被施加預定電壓時振動者。 -45- 201010272 此壓電振動片104是具有：平行配置的一對的振動腕部110、111、及一體固定一對的振動腕部110、111的基端側的基部112、及形成於一對的振動腕部no、ill的外表面上而使一對的振動腕部110、111振動之由第1激發 _ 電極113及第2激發電極114所構成的激發電極115、及 ‘ 被電性連接至第1激發電極113及第2激發電極114的安裝電極116、117。並且，本實施形態的壓電振動片104是具備在一對的參振動腕部110、111的兩主面上沿著振動腕部110、111的長度方向來分別形成的溝部118。此溝部118是從振動腕部1 1 0、1 1 1的基端側到大致中間附近形成。由第1激發電極113及第2激發電極114所構成的激發電極115是使一對的振動腕部110、111以預定的共振頻率來振動於互相接近或離間的方向之電極，在一對的振動腕部110、111的外表面，分別被電性切離的狀態下被圖案化而形成。具體而言，如圖32所示，第1激發電極 0 113是主要形成於一方的振動腕部110的溝部118上及另 ' 一方的振動腕部111的兩側面上，第2激發電極114是主要形成於一方的振動腕部110的兩側面上及另一方的振動腕部111的溝部118上。第1激發電極113及第2激發電極114，如圖30及圖 31所示，在基部112的兩主面上，分別經由拉出電極119 、20來電性連接至安裝電極116、117。然後，壓電振動片104可經由此安裝電極116、117來施加電壓。 -46- 201010272 另外，上述的激發電極115、安裝電極116、117及拉出電極119、120是例如藉由鉻（€〇、鎳（1^)、鋁（ A1)或鈦（Ti)等的導電性膜的被膜來形成者。，在一對的振動腕部110、111的前端被覆有用以進行 • 調整（頻率調整）的重疊金屬膜121，使本身的振動狀態能夠在預定的頻率範圍內振動。另外，此重疊金屬膜121 是被分成：粗調頻率時使用的粗調膜121a、及微調時使用 • 的微調膜121b。利用該等粗調膜121a及微調膜121b來進行頻率調整下，可將一對的振動腕部110、111的頬率收於裝置的標稱頻率的範圍內。如此構成的壓電振動片104是如圖圖27〜圖29所示，利用金等的凸塊B在基底基板102的上面凸塊接合。更具體而言，在基底基板102的上面被圖案化的後述繞拉電極136、137上所形成的2個凸塊B上，一對的安裝電極 116、117分別接觸的狀態下凸塊接合。藉此，壓電振動片 • 104是在從基底基板102的上面浮起的狀態下被支持，且安裝電極116、117與繞拉電極136、137分別形成電性連接的狀態。上述蓋體基板103是由玻璃材料、例如鈉鈣玻璃所構成的透明絕緣基板，如圖26、圖28及圖29所示，形成板狀。然後，在接合基底基板102的接合面側形成有容納壓電振動片104之矩形狀的凹部i〇3a。此凹部i〇3a是在兩基板102、103疊合時，收容壓電振動片][04之形成空腔 C的空腔用凹部。而且，蓋體基板1〇3是使該凹部103a -47- 201010272 對向於基底基板102側的狀態下對基底基板102陽極接合〇上述基底基板102是與蓋體基板103同樣地由玻璃材料、例如鈉鈣玻璃所構成的透明絕緣基板，如圖26〜圖 ^ 29所示，以可對蓋體基板103重疊的大小來形成板狀。 · 在此基底基板102形成有貫通基底基板102的一對通孔（貫通孔）130、131。此時，一對的通孔130、131是以能夠收於空腔C內的方式形成。更詳細說明，本實施形 . 態的通孔1 3 0、1 3 1是形成一方的通孔1 3 0位於所被安裝的壓電振動片104的基部112側，另一方的通孔131位於振動腕部1 1 〇、1 1 1的前端側。並且，本實施形態是舉朝基底基板102的下面漸漸縮徑的剖面錐狀的通孔爲例進行說明，但並非限於此情況，即使是筆直貫通基底基板102的通孔也無妨。無論如何只要貫通基底基板102即可。然後，在該等一對的通孔130、131中形成有以能夠 ^ 塡埋通孔130、131的方式形成的一對貫通電極132、133 ' 。如圖33所示，該等貫通電極132、133是藉由含複數個金屬微粒子P1的膏P的硬化來形成者，擔負將通孔130 、131完全阻塞而維持空腔C內的氣密的同時，使後述的外部電極138、139與繞拉電極136、137導通的任務。另外，貫通電極132、133是藉由在膏P中所含的複數個金屬微粒子P1彼此相接觸.下，確保電氣導通性。並且’本實施形態的金屬微粒子P1是舉藉由銅等來形成細 -48- 201010272 長纖維狀（非球形形狀）時爲例來進行說明。在基底基板1〇2的上面側（接合有蓋體基板103的接合面側），如圖26〜圖29所示，藉由導電性材料（例如鋁）來使陽極接合用的接合膜135、及一對的繞拉電極 • 136、137圖案化。其中接合膜135是以能夠包圍形成於蓋體基板103的凹部l〇3a的周圍之方式沿著基底基板102 的周緣來形成。 φ 一對的繞拉電極136、137是被圖案化成可電性連接一對的貫通電極132、133中一方的貫通電極132與壓電振動片104的一方的安裝電極116，及電性連接另一方的貫通電極133與壓電振動片104的另一方的安裝電極117 。若更詳細說明，則一方的繞拉電極136是以能夠位於壓電振動片104的基部112的正下方之方式形成於一方的貫通電極132的正上方。又，另一方的繞拉電極137是從鄰接於一方的繞拉電極136的位置來沿著振動腕部110、111 Φ 而被繞拉至該振動腕部110、111的前端側之後，以能夠 * 位於另一方的貫通電極133的正上方之方式形成。然後，在該等一對的繞拉電極136、137上分別形成有凸塊B，利用此凸塊B來安裝壓電振動片104。藉此，壓電振動片104的一方的安裝電極116可經由一方的繞拉電極136來導通至一方的貫通電極132，另一方的安裝電極117可經由另一方的繞拉電極137來導通至另一方的貫通電極133。在基底基板102的下面，如圖26、圖28及圖29所示 -49- 201010272 ，形成有對於一對的貫通電極132、133分別電性連接的外部電極138、139。亦即，一方的外部電極138是經由一方的貫通電極132及一方的繞拉電極136來電性連接至壓電振動片104的第1激發電極113。又，另一方的外部電極1 3 9是經由另一方的貫通電極1 3 3及另一方的繞拉電極 137來電性連接至壓電振動片104的第2激發電極114。在使如此構成的壓電振動子101作動時，是對形成於基底基板102的外部電極138、139施加預定的驅動電壓。藉此，可在由壓電振動片104的第1激發電極113及第 2激發電極114所構成的激發電極115流動電流，可使一對的振動腕部110、111在令接近·離間的方向以預定的頻率振動。然後，利用此一對的振動腕部110、111的振動，可作爲時刻源、控制訊號的時序源或參考訊號源等加以利用。其次，一邊參照圖34所示的流程圖，一邊在以下說明有關利用基底基板用晶圓140及蓋體基板用晶圓150來 —次製造複數個上述壓電振動子1〇1的製造方法。首先，進行壓電振動片製作工程，製作圖30〜圖32 所示的壓電振動片104 (S110)。具體而言，首先，以預定的角度切割水晶的朗伯原石，而成爲一定厚度的晶圓。接著，面磨此晶圓而粗加工後，以鈾刻來去除加工變質層，然後進行磨光劑等的鏡面硏磨加工，而成爲預定厚度的晶圓。接著，對晶圓實施洗淨等適當的處理後’藉由光微影技術以壓電振動片104的外形形狀來使晶圓圖案化，且 201010272 進行金屬膜的成膜及圖案化，而形成激發電極115、拉出電極119、120、安裝電極116、117、重疊金屬膜121。藉此，可製作複數的壓電振動片104。 • 並且，在製作壓電振動片104後，進行共振頻率的粗一調。此是對重疊金屬膜121的粗調膜121a照射雷射光而使一部分蒸發，令重量變化下進行。另外，有關更高精度調整共振頻率的微調是在安裝後進行。對於此會在往後說 ❿ 明。其次，進行第1晶圓製作工程（s 1 20 )，其係將之後形成蓋體基板103的蓋體基板用晶圓150製作至即將進行陽極接合之前的狀態。首先，將鈉鈣玻璃硏磨加工至預定的厚度而洗淨後，如圖35所示，形成藉由蝕刻等來除去最表面的加工變質層之圓板狀的蓋體基板用晶圓150 ( S121)。其次，進行凹部形成工程（S122)，其係於蓋體基板用晶圓150的接合面，藉由鈾刻等在行列方向形成複 Φ 數個空腔用的凹部l〇3a。在此時間點，完成第1晶圓製作 . 工程。其次，進行第2晶圓製作工程（S130)，其係以和上述工程同時或前後的時序，將之後形成基底基板102的基底基板用晶圓140製作至即將進行陽極接合之前的狀態。首先，將鈉鈣玻璃硏磨加工至預定的厚度而洗淨後，形成藉由蝕刻等來除去最表面的加工變質層之圓板狀的基底基板用晶圓140 (S131)。其次，進行貫通電極形成工程（ S130A)，其係於基底基板用晶圓140利用含複數個金屬 -51 - 201010272 微粒子P1的膏P來形成複數個一對的貫通電極132、133 。在此詳細說明有關此貫通電極形成工程。首先，如圖36所示，進行穴部形成工程（S132)，其係於基底基板用晶圓140的上面形成複數個一對的穴部 ‘ 130a、131a。另外，圖36所示的點線Μ是表示以之後進、行的切斷工程所切斷的切斷線。在進行此工程時，從基底基板用晶圓1 40的上面側，例如以噴沙法進行。藉此，如圖37所示，可形成朝基底基板用晶圓140的下面漸漸縮 0 徑的剖面錐狀，且下面側具有底的穴部130a、131a。又，之後疊合兩晶圓140、150時，以能夠收於蓋體基板用晶圓150所形成的凹部103a內之方式形成複數個一對的穴部130a、131a〇而且，形成一方的穴部130a會位於壓電振動片104的基部112側，另一方的穴部131a會位於振動腕部1 1 〇、1 1 1的前端側。另外，本實施形態是舉朝基底基板用晶圓140的下面漸漸縮徑的剖面錐狀的穴部爲例進行說明’但並非限於此 © 情況，即使是設成直徑均一的穴部也無妨。無論如何’只 · 要是在基底基板用晶圓140的下面側具有底的有底狀的穴部即可。接著，如圖38所示，進行充塡工程（S133)，其係於該等複數的穴部130a、131a內無間隙埋入膏P而阻塞穴部130a、131a。另外，在圖38〜圖41是省略了金屬微粒子P1的圖示。接著，進行燒結工程（S134) ’其係以預定的溫度來 -52- 201010272Then, the conductive material is patterned on the upper surface of the base substrate wafer 40, and as shown in FIGS. 19 and 20, the bonding film forming process for forming the bonding film 35 is performed (S40), and a plurality of winding electrodes 36 are formed. The winding electrode forming process of 37 Q is performed (S41), and the winding electrodes 36 and 37 are electrically connected to the pair of through electrodes 32 and 33, respectively. Further, the dotted line shown in Figs. 19 and 20 is a cutting line which is cut by a cutting process which is performed later. In particular, the through electrodes 32 and 33 have almost the same surface on the upper surface of the wafer 40 for the base substrate as described above. Therefore, the wrap electrodes 36 and 37 patterned on the upper surface of the base substrate wafer 40 are connected to each other without causing a gap or the like to be in contact with the through electrodes 3 2, 3 3 . Thereby, the conductivity of one of the winding electrodes 36 and one of the through electrodes 32, and the conductivity of the other of the winding electrodes 37 and the other through electrode 33 can be made reliable. At this point in time, the second wafer fabrication project was completed. However, in the case of FIG. 9, the bonding order forming process (S4 1 ) is performed after the bonding film forming process (S40), but conversely, after the winding electrode forming process (S4 1), bonding is performed. Membrane forming engineering (S40) is also possible, or it is possible to carry out two projects at the same time. The same effect can be achieved regardless of the engineering order. Therefore, it is no problem to change the engineering order appropriately in response to the need of -38- 201010272. Then, the plurality of piezoelectric vibrating reeds 4 after fabrication are bonded to the upper surface of the base substrate wafer 40 via the wrap electrodes 36 and 37 (S50). First, a bump B of gold or the like is formed on each of the pair of winding electrodes 36 and 37. Then, after the base portion 12 of the piezoelectric vibrating reed 4 is placed on the bump B, the piezoelectric vibrating reed 4 is pushed to the bump B while the bump B is heated to a predetermined temperature. Thereby, the piezoelectric vibrating reed 4 is mechanically supported by the φ bump B, and the mounting electrodes 16, 17 and the winding electrodes 36, 37 are electrically connected. Therefore, at this point of time, the pair of excitation electrodes 15 of the piezoelectric vibration piece 4 are in a state in which the pair of through electrodes 32 and 3 3 are respectively turned on. In particular, since the piezoelectric vibrating reed 4 is bonded by bumps, it is supported in a state of being floated from the upper surface of the base substrate wafer 40. After the mounting of the piezoelectric vibrating reed 4 is completed, a superimposing process of superposing the wafer 50 for a cover substrate on the wafer 40 for the base substrate is performed (S60). Specifically, φ is aligned with the two crystal * circles 40 and 50 at the correct position by using a reference mark or the like (not shown) as an index. As a result, the piezoelectric vibrating reed 4 to be mounted is formed in a state of being housed in the cavity C surrounded by the concave portion 3a of the base substrate wafer 40 and the two wafers 40, 50. After the superposition process, a bonding process (S70) is performed in which two stacked wafers 40, 50 are placed in an anodic bonding apparatus (not shown), and a predetermined voltage is applied to a predetermined temperature environment to be anodically bonded. Specifically, a predetermined voltage is applied between the bonding film 35 and the wafer 50 for a cover substrate. Then, an electrochemical reaction is generated at the interface between the bonding film 35 and the wafer 50 for the cover substrate, and the two are firmly bonded to each other and are anodically bonded. Thereby, the piezoelectric vibrating reed 4 can be sealed in the cavity C, and the wafer body 60 shown in Fig. 21 in which the base substrate wafer 40 and the lid substrate wafer 50 are joined can be obtained. In addition, in Fig. 21, in order to facilitate the drawing, the state of the wafer body 60 is illustrated, and the bonding film 35 is omitted from the base substrate wafer 40. Further, the dotted line shown in Fig. 21 is a cutting line which is cut by a cutting process which is performed later. However, when the anodic bonding is performed, the through holes 30 and 31 formed in the base substrate wafer 40 are completely blocked by the through electrodes 32 and 33, so that there is no airtight through hole 3 0, 3 in the cavity C. 1 and the situation is damaged. In particular, by sintering, the cylindrical body 6 and the core portion 7 are integrally fixed, and these holes are firmly adhered to the through holes 30, 31, so that the airtightness in the cavity C can be surely maintained. Then, after the anodic bonding is completed, an external electrode forming process (S80) is performed, and the conductive material is patterned on the lower surface of the base substrate wafer 40 to form a plurality of through electrodes 32 electrically connected to a pair. , 33 pairs of external electrodes 38, 39. By this engineering, the piezoelectric vibrating reed 4 sealed in the cavity C can be operated by the external electrodes 38, 39, and particularly in the case of the construction of the winding electrodes 36, 37, the substrate is In the lower surface of the substrate wafer 40, the through electrodes 32 and 33 are in a state in which the surfaces are almost uniform. Therefore, the patterned external electrodes 38 and 39 do not cause a gap or the like therebetween, and the through electrodes 32 and 33 are in close contact with each other. State connection. Thereby, the conductivity between the external electrodes 38 and 39 and the through electrodes 32 and 201010272 33 can be made reliable. Next, the fine adjustment process (S90) is performed in the state of the wafer body 60, and the frequency of each piezoelectric vibrator 1 sealed in the cavity c is finely adjusted to be within a predetermined range. Specifically, a voltage is applied to the external electrodes 38 and 39 formed on one of the lower surfaces of the crystal substrate-circle 40 for the base substrate, and the piezoelectric vibrating reed 4 is vibrated. Then, while measuring the frequency, the laser light is irradiated from the outside through the cover substrate wafer 50, and the fine adjustment φ film 21b of the superposed metal film 21 is evaporated. Thereby, the weight of the front end side of the pair of vibrating arms 10 and 11 changes, so that the frequency of the piezoelectric vibrating reed 4 can be finely adjusted to be within a predetermined range of the nominal frequency. After the fine adjustment of the frequency is completed, the cutting process (S100) is performed, and the wafer body 60 to be bonded is cut along the cutting line shown in Fig. 21 to be diced. As a result, a plurality of two-layer structure type surface mount type piezoelectric vibrators 1 shown in FIG. 1 can be manufactured at one time in the cavity C formed between the base substrate 2 and the lid substrate 3 which are bonded to each other. Sealing the piezoelectric vibrating reed 4 * In addition, even if the cutting operation (S100) is performed and the piezoelectric vibrators 1 are small, the engineering sequence of the fine adjustment engineering (S90) may be performed. However, as described above, fine adjustment can be performed in the state of the wafer body 60 under the fine adjustment process (S90), so that the plurality of piezoelectric vibrators 1 can be finely adjusted more efficiently. Therefore, it is more desirable to seek an increase in total production capacity. Then, an internal electrical characteristic check (S 1 1 0 ) is performed. In other words, the resonance frequency of the piezoelectric vibrating reed 4, the resonance resistance 値, the drive level characteristic -41 - 201010272 (resonance frequency and the dependence of the resonance resistance of the resonance resistance )) are measured, and the insulation resistance is checked. Features, etc. Then, the appearance inspection of the piezoelectric vibrator 1 is finally performed, and the size, quality, and the like are finally checked. Thereby, the manufacture of the piezoelectric vibrator 1 is completed. In particular, in the piezoelectric vibrator 1 of the present embodiment, the through electrodes 32 and 33 can be formed in a state in which the base substrate 2 is almost surface-aligned. Therefore, the through electrodes 32 and 33 can be wound around the pull electrodes 36 and 37 and the outside. The electrodes 38, 39 are indeed in close contact. As a result, the stability of the piezoelectric vibrating reed 4 and the external electrodes 38 and φ 39 can be ensured, and the reliability of the actuator performance can be improved and the performance can be improved. Further, since the airtightness in the cavity C can be surely maintained, it is also possible to achieve high quality. Further, since the through electrodes 32 and 33 can be formed by a simple method using the paste P, the engineering can be simplified. Further, according to the manufacturing method of the present embodiment, a plurality of the piezoelectric vibrators 1 can be manufactured at one time, so that the cost can be reduced. Further, in the honing process, the base portion 8 can be removed. Therefore, compared with the case of honing both surfaces of the base substrate wafer 40, the honing process can be performed in a short time. Further, in the honing process, particularly in the following honing process, the volume of the paste P which is not reduced during sintering is set, and can be set according to the thickness of the base substrate wafer 40 and the depth of the holding holes 30a and 31a. Grinding amount. That is, it is sufficient to honing until reaching the bottom of the holding holes 30a, 31a. Therefore, it is not necessary to confirm the state of the paste P and then honing it, as long as the predetermined amount is honed. Therefore, it is possible to prevent honing or excessive honing. Further, after the temporary sintering, the paste P is subjected to the main sintering, and the depression of the surface of the paste P can be reduced by -42 - 201010272. Therefore, in the honing process, particularly in the upper honing process, the amount of honing of the base substrate wafer 40 is extremely small. As a result, the time required for the honing process can be shortened, and the manufacturing efficiency of the piezoelectric vibrator 1 can be improved. In addition, by performing the honing process after the above-described main sintering, the surface of the base substrate wafer 40 in which the surface of the cured paste P is almost in the same direction can be further honed. Thereby, the surface φ of the base substrate wafer 40 can be brought into a state in which the surface of the cured paste p is in a uniform surface. (Second embodiment) Hereinafter, a second embodiment of the present invention will be described with reference to Figs. 22 to 25 . In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and their description is omitted. The second embodiment differs from the first embodiment in the operation sequence of the through electrode forming process in the manufacturing method. In other words, in the first embodiment, after the φ is temporarily sintered, the P paste is embedded in the charging process, and then the new paste P is replenished, and the temporary sintering is performed again. Then, after the main sintering, the honing process is performed, but the honing process is performed. In the second embodiment, after the paste P embedded in the charging process is temporarily sintered, the honing process is performed immediately, and then the main sintering is performed. In the following, the through electrode forming process (S30B) of the present embodiment will be specifically described with reference to the flowchart showing the manufacturing method of the second embodiment of the present invention shown in Fig. 22 . In the through-electrode forming process of the present embodiment, the paste P embedded in the charging process is temporarily sintered until the first embodiment is carried out in the same manner as in the first embodiment. After temporarily sintering the paste p embedded in the filling process, a depression is formed on the surface of the paste p. Then, after the temporary sintering is performed, the honing process for honing the both surfaces of the base substrate wafer 40 by a predetermined thickness is performed. That is, as shown in FIG. 23, the upper honing process and the lower surface honing work are performed, and the upper honing process is to honing only the predetermined thickness of the upper surface of the base substrate wafer 40, and the lower honing work is The underside of the base substrate wafer 40 is honed until reaching the bottom of the holding holes 30a and 31a. By this, as shown in Fig. 24, the holding holes 30a, 31a form the through holes 30' 31. Further, since the periphery of the recessed portion of the paste P can be removed, the surface of the base substrate wafer 40 and the surface of the temporarily sintered paste P almost form a surface. Further, the amount of reduction in the volume of the temporarily sintered paste P is smaller than that in the case of primary sintering without temporary sintering. Therefore, the depression of the surface of the paste P which is generated by the temporary sintering is smaller than the depression which is generated when the same amount of the paste P is not temporarily sintered and the primary sintering is performed once. Therefore, by temporarily performing the honing process after temporarily sintering the paste P, the amount of honing can be reduced, in particular, the time required for honing can be shortened by performing the above honing work and the following honing work. Complete the honing project. Then, after performing the honing process, the paste P is completely hardened by performing the main sintering. Thereby, the paste P is firmly adhered to the inner faces of the through holes 30 and 31, and the crucible P has the function as the through electrodes 32 and 33. Further, since most of the organic matter in the paste P has evaporated - 44 - 201010272 during the temporary sintering, the volume reduction of the official sintering is extremely small. Therefore, the surface of the base substrate wafer 40 and the surface of the cured paste P are maintained in a state in which they almost coincide with the surface of the paste before the main sintering. By this formal sintering, the through electrode formation process is completed. ^ According to the manufacturing method of the present embodiment, in addition to the effect of the first embodiment, the above-mentioned honing process is performed by temporarily sintering the paste P embedded in the charging process, and Temporary sintering φ is compared with the honing process immediately after the first sintering, which shortens the time required for the honing process. (Third embodiment) Hereinafter, a third embodiment of the present invention will be described with reference to Figs. 26 to 44. As shown in FIG. 26 to FIG. 29, the piezoelectric vibrator 101 of the present embodiment is formed in a box 0 shape in which two layers are laminated on the base substrate 102 and the lid substrate 103, and piezoelectrics are accommodated in the inner cavity c. A piezoelectric vibrator 101 of the type is mounted on the surface of the vibrating piece 104. In addition, in FIG. 29, illustration of the excitation electrode 115, the extractor electrodes 119 and 120, the mount electrodes 116 and 117, and the overlap metal film 211 which will be described later is omitted in order to facilitate the drawing. . As shown in Fig. 30 to Fig. 32, the piezoelectric vibrating piece 1?4 is a tuning-fork type vibrating piece formed of a piezoelectric material such as crystal, lithium niobate or lithium niobate, and vibrates when a predetermined voltage is applied. -45- 201010272 The piezoelectric vibrating piece 104 includes a pair of vibrating arms 110 and 111 arranged in parallel, and a base portion 112 on the proximal end side of the pair of vibrating arms 110 and 111 integrally formed, and is formed on the base The pair of vibrating arms 110 and 111 on the outer surface of the pair of vibrating arms no and ill, the excitation electrode 115 composed of the first excitation electrode 113 and the second excitation electrode 114, and the electric property The mounting electrodes 116 and 117 are connected to the first excitation electrode 113 and the second excitation electrode 114. In the piezoelectric vibrating piece 104 of the present embodiment, the groove portion 118 is formed on each of the main surfaces of the pair of vibrating arms 110 and 111 along the longitudinal direction of the vibrating arms 110 and 111. The groove portion 118 is formed from the proximal end side of the vibrating arms 1 1 0 and 1 1 1 to the vicinity of the substantially middle portion. The excitation electrode 115 composed of the first excitation electrode 113 and the second excitation electrode 114 is an electrode that vibrates the pair of vibration arms 110 and 111 at a predetermined resonance frequency in a direction approaching or separating from each other. The outer surfaces of the vibrating arms 110 and 111 are formed by being patterned in a state of being electrically separated from each other. Specifically, as shown in FIG. 32, the first excitation electrode 0 113 is mainly formed on the groove portion 118 of one of the vibration arm portions 110 and on both sides of the other vibration arm portion 111, and the second excitation electrode 114 is Mainly formed on both side surfaces of one of the vibrating arms 110 and on the groove portion 118 of the other vibrating arm portion 111. As shown in Figs. 30 and 31, the first excitation electrode 113 and the second excitation electrode 114 are electrically connected to the mounting electrodes 116 and 117 via the pull-out electrodes 119 and 20 on both main surfaces of the base portion 112, respectively. Then, the piezoelectric vibrating piece 104 can apply a voltage via the mounting electrodes 116, 117. -46- 201010272 In addition, the above-described excitation electrode 115, mounting electrodes 116, 117, and pull-out electrodes 119, 120 are, for example, made of chromium ("〇, nickel (1^), aluminum (Al), or titanium (Ti)). The film of the conductive film is formed. The front end of the pair of vibrating arms 110 and 111 is covered with an overlapping metal film 121 for adjustment (frequency adjustment) so that the vibration state itself can be within a predetermined frequency range. In addition, the superposed metal film 121 is divided into a coarse adjustment film 121a used when the frequency is coarsely adjusted, and a fine adjustment film 121b used when fine adjustment is used. The coarse adjustment film 121a and the fine adjustment film 121b are used for frequency adjustment. The piezoelectric vibrating piece 104 thus constructed can be in the range of the nominal frequency of the device. The piezoelectric vibrating piece 104 thus constructed is convex as shown in FIG. 27 to FIG. The block B is bump-bonded on the upper surface of the base substrate 102. More specifically, a pair of mounting electrodes are formed on the two bumps B formed on the winding electrodes 136, 137 which are patterned on the upper surface of the base substrate 102. The bumps are joined in the state in which 116 and 117 are respectively in contact. Here, the piezoelectric vibrating reed 104 is supported in a state of being floated from the upper surface of the base substrate 102, and the mounting electrodes 116 and 117 are electrically connected to the winding electrodes 136 and 137, respectively. A transparent insulating substrate made of a glass material, for example, soda lime glass, is formed into a plate shape as shown in Fig. 26, Fig. 28, and Fig. 29. Then, a piezoelectric vibrating piece is formed on the joint surface side of the bonded base substrate 102. a recessed portion i 〇 3a of a rectangular shape of 104. The recessed portion i 〇 3a accommodates a cavity for forming a cavity C in a piezoelectric vibrating piece when the two substrates 102 and 103 are stacked. Further, the cover substrate 1〇3 is anodically bonded to the base substrate 102 in a state in which the concave portions 103a to 47-201010272 are opposed to the base substrate 102. The base substrate 102 is made of a glass material such as soda lime glass in the same manner as the lid substrate 103. As shown in FIGS. 26 to 29, the transparent insulating substrate is formed in a plate shape so as to overlap the lid substrate 103. The base substrate 102 is formed with a pair of through holes penetrating through the base substrate 102. Hole) 130, 131. At this time, one The through holes 130 and 131 are formed so as to be receivable in the cavity C. In more detail, the through holes 1 3 0 and 1 3 1 of the present embodiment are one through holes 1 3 0 On the side of the base portion 112 of the piezoelectric vibrating reed 104 to be mounted, the other through hole 131 is located on the distal end side of the vibrating arms 1 1 〇 and 1 1 1. Further, in the present embodiment, the diameter is gradually reduced toward the lower surface of the base substrate 102. The cross-sectional tapered via hole is described as an example, but the present invention is not limited thereto, and it may be a through hole that penetrates the base substrate 102 straight. In any case, it is only necessary to penetrate the base substrate 102. Then, a pair of through electrodes 132 and 133' formed so as to be able to bury the through holes 130 and 131 are formed in the pair of through holes 130 and 131. As shown in FIG. 33, the through electrodes 132 and 133 are formed by hardening the paste P containing a plurality of metal fine particles P1, and are responsible for completely blocking the through holes 130 and 131 to maintain airtightness in the cavity C. At the same time, the external electrodes 138 and 139, which will be described later, are brought into conduction with the winding electrodes 136 and 137. Further, the through electrodes 132 and 133 are in contact with each other by the plurality of metal fine particles P1 contained in the paste P, thereby ensuring electrical continuity. Further, the metal fine particles P1 of the present embodiment will be described by taking an example of forming a fine -48-201010272 long fiber shape (non-spherical shape) by copper or the like. As shown in FIG. 26 to FIG. 29, the bonding film 135 for anodic bonding is provided on the upper surface side of the base substrate 1 2 (the bonding surface side to which the lid substrate 103 is bonded), and as shown in FIGS. 26 to 29 A pair of winding electrodes • 136, 137 are patterned. The bonding film 135 is formed along the periphery of the base substrate 102 so as to surround the recessed portion 10a formed in the lid substrate 103. φ A pair of winding electrodes 136 and 137 are patterned to electrically connect one of the pair of through electrodes 132 and 133 and one of the mounting electrodes 116 of the piezoelectric vibrating piece 104, and electrically connected One of the through electrodes 133 and the other of the piezoelectric vibrating pieces 104 are mounted electrodes 117. More specifically, one of the wrap electrodes 136 is formed directly above one of the through electrodes 132 so as to be positioned directly below the base portion 112 of the piezoelectric vibrating piece 104. Further, the other winding electrode 137 is wound around the distal end side of the vibrating arms 110 and 111 along the vibrating arms 110 and 111 Φ from a position adjacent to one of the winding electrodes 136. * is formed to be located directly above the other through electrode 133. Then, bumps B are formed on the pair of winding electrodes 136, 137, respectively, and the piezoelectric vibrating piece 104 is mounted by the bumps B. Thereby, one of the mounting electrodes 116 of the piezoelectric vibrating piece 104 can be electrically connected to one of the through electrodes 132 via one of the winding electrodes 136, and the other mounting electrode 117 can be electrically connected to the other by the other of the winding electrodes 137. One through electrode 133. On the lower surface of the base substrate 102, as shown in Figs. 26, 28 and 29, -49 to 201010272, external electrodes 138 and 139 which are electrically connected to the pair of through electrodes 132 and 133, respectively, are formed. That is, one of the external electrodes 138 is electrically connected to the first excitation electrode 113 of the piezoelectric vibrating piece 104 via one of the through electrodes 132 and one of the winding electrodes 136. Further, the other external electrode 139 is electrically connected to the second excitation electrode 114 of the piezoelectric vibrating piece 104 via the other through electrode 13 3 and the other winding electrode 137. When the piezoelectric vibrator 101 thus constructed is actuated, a predetermined driving voltage is applied to the external electrodes 138 and 139 formed on the base substrate 102. Thereby, an electric current flows through the excitation electrode 115 composed of the first excitation electrode 113 and the second excitation electrode 114 of the piezoelectric vibrating piece 104, and the pair of vibrating arms 110 and 111 can be brought close to each other. Vibration at a predetermined frequency. Then, the vibration of the pair of vibration arms 110 and 111 can be utilized as a time source, a timing source of the control signal, or a reference signal source. Next, a method of manufacturing a plurality of the piezoelectric vibrators 1〇1 by the base substrate wafer 140 and the lid substrate wafer 150 will be described below with reference to the flowchart shown in FIG. First, the piezoelectric vibrating reed manufacturing process is performed, and the piezoelectric vibrating reed 104 shown in FIGS. 30 to 32 is produced (S110). Specifically, first, the Lambertian original of the crystal is cut at a predetermined angle to become a wafer having a certain thickness. Next, the wafer is roughened by surface grinding, and the affected layer is removed by uranium engraving, and then mirror-honed by a polishing agent or the like to form a wafer having a predetermined thickness. Then, after performing appropriate processing such as cleaning on the wafer, the wafer is patterned by the external shape of the piezoelectric vibrating reed 104 by photolithography, and the film formation and patterning of the metal film are performed in 201010272 to form a wafer. The excitation electrode 115, the extraction electrodes 119 and 120, the mounting electrodes 116 and 117, and the metal film 121 are stacked. Thereby, a plurality of piezoelectric vibrating pieces 104 can be produced. • After the piezoelectric vibrating piece 104 is fabricated, the resonance frequency is coarsely adjusted. This is because the coarse adjustment film 121a of the superposed metal film 121 is irradiated with the laser light to evaporate a part thereof, and the weight is changed. In addition, the fine adjustment of the resonance frequency with higher precision is performed after installation. For this, I will say later. Then, the first wafer fabrication process (s 1 20) is performed, and the lid substrate wafer 150 on which the lid substrate 103 is formed is formed in a state immediately before the anodic bonding. First, after the soda-lime glass is honed to a predetermined thickness and washed, as shown in FIG. 35, a disk-shaped cover substrate wafer 150 is formed by etching or the like to remove the outermost work-affected layer ( S121). Then, a concave portion forming process (S122) is performed on the joint surface of the wafer 150 for the lid substrate, and a plurality of concave portions 103a for cavities are formed in the row direction by uranium engraving or the like. At this point in time, the first wafer fabrication was completed. Then, the second wafer fabrication process (S130) is performed, and the base substrate wafer 140 on which the base substrate 102 is formed is formed in a state immediately before the anodic bonding, at the same time as or before and after the above-described process. First, after the soda-lime glass is honed to a predetermined thickness and washed, a disk-shaped base substrate wafer 140 is formed by etching or the like to remove the outermost process-affected layer (S131). Next, a through electrode formation process (S130A) is performed in which a plurality of pairs of through electrodes 132 and 133 are formed on the base substrate wafer 140 by using a paste P containing a plurality of metal-51 - 201010272 fine particles P1. This through electrode formation process will be described in detail herein. First, as shown in Fig. 36, a hole forming process (S132) is performed, in which a plurality of pair of hole portions '130a, 131a are formed on the upper surface of the base substrate wafer 140. In addition, the dotted line shown in Fig. 36 is a cutting line which is cut by a cutting process which is carried out later. In carrying out this process, the upper surface side of the base substrate wafer 140 is subjected to, for example, a sandblasting method. As a result, as shown in Fig. 37, a tapered portion having a tapered shape which is gradually reduced toward the lower surface of the base substrate wafer 140 and having a bottom portion on the lower surface side can be formed. When the two wafers 140 and 150 are stacked, a plurality of pairs of the hole portions 130a and 131a are formed so as to be able to be received in the concave portion 103a formed by the lid substrate wafer 150, and one hole is formed. The portion 130a is located on the base portion 112 side of the piezoelectric vibrating piece 104, and the other hole portion 131a is located on the front end side of the vibrating arms 1 1 〇 and 1 1 1 . In the present embodiment, the tapered portion having a tapered shape which is gradually reduced in diameter toward the lower surface of the base substrate wafer 140 will be described as an example. However, the present invention is not limited thereto, and it is also possible to provide a hole portion having a uniform diameter. In any case, it is only necessary to have a bottomed bottom portion on the lower surface side of the base substrate wafer 140. Next, as shown in Fig. 38, a filling process (S133) is performed in which the paste portions 130a and 131a are blocked without any gaps in the plurality of pocket portions 130a and 131a. In addition, in Fig. 38 to Fig. 41, illustration of the metal microparticles P1 is omitted. Next, a sintering process (S134) is performed, which is performed at a predetermined temperature -52-201010272

燒結充塡後的膏p而使硬化。藉此，形成膏p會牢固地黏著於穴部13 0a、131a的內面之狀態。可是，硬化的膏P 在燒結時因爲未圖示之膏P內的有機物會蒸發，所以如圖， 39所示，相較於充塡工程時，體積會減少。因此，在膏P • 的表面，無論如何也會產生凹陷。於是，燒結後，如圖40所示，進行上面硏磨工程（ S135)，其係將基底基板用晶圓140的上面只硏磨預定的 φ 厚度。藉由進行此工程，在基底基板用晶圓140的上面，因燒結而硬化的膏P也可同時硏磨，因此可削去凹陷的部分的周圍。亦即，可使硬化的膏P的表面平坦化。因此，如圖41所示，在基底基板用晶圓140的上面，基底基板用晶圓140的表面與硬化的膏P的表面可幾乎形成面一致的狀態。The paste p after sintering is sintered to be hardened. Thereby, the paste p is firmly adhered to the inner surface of the hole portions 130a and 131a. However, since the hardened paste P is evaporated during the sintering because the organic matter in the paste P (not shown) evaporates, as shown in Fig. 39, the volume is reduced as compared with the filling process. Therefore, on the surface of the paste P •, a depression is generated anyway. Then, after the sintering, as shown in Fig. 40, the upper honing process (S135) is performed, and only the predetermined φ thickness is honed on the upper surface of the base substrate wafer 140. By performing this process, the paste P which is hardened by sintering can be simultaneously honed on the upper surface of the base substrate wafer 140, so that the periphery of the recessed portion can be removed. That is, the surface of the hardened paste P can be flattened. Therefore, as shown in Fig. 41, on the upper surface of the base substrate wafer 140, the surface of the base substrate wafer 140 and the surface of the cured paste P can almost face each other.

並且，以和上面硏磨工程同時或前後的時序，如圖40 所示，實施下面硏磨工程（S136)，其係硏磨基底基板用 Φ 晶圓140的下面，到穴部130a、131a貫通至少硬化的膏P * 露出爲止。在本實施形態的下面硏磨工程是硏磨至到達穴部13 0a、131a的底爲止。藉此，如圖41所示，在穴部 130a、131a內硬化的膏P會露出於下面。藉由進行此下面硏磨工程，形成於基底基板用晶圓140之一對的穴部130a 、131a會之後形成貫通基底基板用晶圓140的通孔130、 131，且硬化的膏P會形成一對的貫通電極132、133。此外，與上面硏磨工程同樣，在基底基板用晶圓140的下面，基底基板用晶圓140的表面與硬化的膏P的表面也可幾 -53- 201010272 乎形成面一致的狀態。藉由進行該等上面硏磨工程及下面硏磨工程，完成貫通電極形成工程。其次，在基底基板用晶圓140的上面使導電性材料圖 \ 案化，如圖42及圖43所示，進行形成接合膜135的接合 · 膜形成工程（S137)，且進行形成複數個繞拉電極136、 137的繞拉電極形成工程（S138)，該繞拉電極136、137 是分別電性連接至各一對的貫通電極132、133。另外，圖 @ 42及圖43所示的點線Μ是表示以之後進行的切斷工程所切斷的切斷線。特別是貫通電極1 3 2、1 3 3.如上述般表面無凹陷，對基底基板用晶圓140的上面幾乎形成面一致的狀態。因此，在基底基板用晶圓140的上面被圖案化的繞拉電極136 、137是之間不使產生間隙等，以對貫通電極132、133密合的狀態連接。藉此，可使一方的繞拉電極136與一方的貫通電極132的導通性、及另一方的繞拉電極137與另一 © 方的貫通電極133的導通性成爲確實者。在此時間點完成第2晶圓製作工程。可是就圖34而言，是在接合膜形成工程（S137)之後，進行繞拉電極形成工程（S138)的工程順序，但相反的，在繞拉電極形成工程（S138)之後，進行接合膜形成工程（S137)也無妨，或同時進行兩工程也無妨。無論哪個工程順序，皆可實現同一的作用效果。因此，即使因應所需來適當變更工程順序也無妨。 -54- 201010272 其次，進行將製作後的複數個壓電振動片104分別經由繞拉電極136、137來接合於基底基板用晶圓140的上面之安裝工程（S140)。首先，在一對的繞拉電極136、 137上分別形成金等的凸塊B。然後，將壓電振動片104 . 的基部112載置於凸塊B上之後，一邊將凸塊B加熱至預定溫度，一邊將壓電振動片104推擠至凸塊B。藉此，壓電振動片1〇4會被凸塊B機械性地支持，且安裝電極116 φ 、117與繞拉電極136、137會形成電性連接的狀態。因此，在此時間點，壓電振動片1 04的一對激發電極1 1 5是形成對一對的貫通電極1 3 2、1 3 3分別導通的狀態。特別是因爲壓電振動片104被凸塊接合，所以是在從基底基板用晶圓140的上面浮起的狀態下被支持。在壓電振動片104的安裝終了後，進行對基底基板用晶圓140疊合蓋體基板用晶圓150的疊合工程（S150)。具體而言，一邊將未圖示的基準標記等作爲指標，一邊將 Ο 兩晶圓140、150對準於正確的位置。藉此，所被安裝的 . 壓電振動片1〇4會形成被收容於以形成於基底基板用晶圓 140的凹部103a與兩晶圓140、150所包圍的空腔C內之狀態。疊合工程後，進行接合工程（S160 )，其係將疊合的 2片晶圓140、150放入未圖示的陽極接合裝置，在預定的溫度環境施加預定的電壓而陽極接合。具體而言，在接合膜135與蓋體基板用晶圓150之間施加預定的電壓。於是，在接合膜135與蓋體基板用晶圓150的界面產生電氣化 -55- 201010272 學的反應，兩者會分別牢固地密合而被陽極接合。藉此，可將壓電振動片104密封於空腔C內，可取得基底基板用晶圓140與蓋體基板用晶圓150接合之圖44所示的晶圓體160。另外，在圖44中，爲了容易看圖面，圖示分解晶、圓體160的狀態，自基底基板用晶圓140省略接合膜135 · 的圖示。並且，圖44所示的點線Μ是表示以之後進行的切斷工程所切斷的切斷線。可是在進行陽極接合時，形成於基底基板用晶圓140 φ 的通孔130、131是被貫通電極132、133所完全阻塞，因此不會有空腔C內的氣密經通孔1 3 0、1 3 1而受損的情形。特別是構成貫通電極132、133的胥Ρ是牢固密合於通孔130、131的內面，因此可確實地維持空腔C內的氣密〇然後，上述陽極接合終了後，進行外部電極形成工程 (S170)，其係於上述陽極接合終了後，在基底基板用晶圓140的下面將導電性材料圖案化，形成複數個分別電性 # 連接至一對的貫通電極132、133之一對的外部電極138、 ‘ 139。藉由此工程，可利用外部電極138、139來使被密封於空腔C內的壓電振動片104作動。特別是進行此工程時也是與繞拉電極136、137的形成時同樣，對基底基板用晶圓140的下面，貫通電極132 、133是幾乎形成面一致的狀態，因此被圖案化的外部電極138、139是之間不使間隙等發生，以對貫通電極132、 133密合的狀態連接。藉此，可使外部電極138、139與貫 -56- 201010272 通電極132、133的導通性成爲確實者。其次，進行微調工程（S180) ’其係於晶圓體160的狀態，微調被密封於空腔C內的各個壓電振動子101的頻率，收於預定的範圍內。具體說明’是對形成於基底基板 • 用晶圓140的下面之一對的外部電極138、139施加電壓，而使壓電振動片1〇4振動。然後，一邊計測頻率，一邊通過蓋體基板用晶圓150從外部照射雷射光，使重疊金屬 φ 膜121的微調膜121b蒸發。藉此，一對的振動腕部110、 111的前端側的重量會變化，因此可將壓電振動片1〇4的頻率微調成收於標稱頻率的預定範圍內。頻率的微調終了後，進行切斷工程（S190)，其係沿著圖44所示的切斷線Μ來切斷所被接合的晶圓體160而小片化。其結果，可一次製造複數個圖26所示的2層構造式表面安裝型的壓電振動子101，其係於被互相接合的基底基板102與蓋體基板103之間形成的空腔C內密封壓 Φ 電振動片104。 * 另外，即使是進行切斷工程（S1 90)而使各個的壓電振動子101小片化後，進行微調工程（S180)的工程順序也無妨。但，如上述般，先進行微調工程（S180)下，可在晶圓體160的狀態下進行微調，因此可更有效率地微調複數的壓電振動子101。因此可謀求總生產能力的提升。然後，進行內部的電氣特性檢査（s 195 )。亦即，測定壓電振動片104的共振頻率、共振電阻値、驅動電平特性（共振頻率及共振電阻値的激發電力依存性）等而檢查 -57- 201010272 。並且，一倂檢查絕緣電阻特性等。然後，最後進行壓電振動子101的外觀檢査，而最終檢查尺寸或品質等。藉此完成壓電振動子101的製造。特別是本實施形態的壓電振動子101是表面無凹陷， ' 可在對基底基板102幾乎面一致的狀態下形成貫通電極 - 132、133，因此可使貫通電極132、133對繞拉電極136、 137及外部電極138、139確實地密合。其結果，可確保壓電振動片104與外部電極138、139的安定導通性，可提參升作動性能的可靠度而謀求高性能化。又，有關空腔C內的氣密也可確實地維持，所以此點也可謀求高品質化。更在下面硏磨工程中，是不依燒結時減少的膏P的體積，而是可根據基底基板用晶圓140的厚度及穴部13 0a、 131a的深度來設定硏磨量。亦即，如圖40所示，可由基底基板用晶圓140的厚度T1及穴部130a、131a的深度 T2來容易設定硏磨量T3。因此，有關下面硏磨工程是不必確認膏P的狀態後進行硏磨，只要硏磨預先決定的量即 ® 可。因此，可防止硏磨不足或過度的硏磨。又，由於可藉由利用膏P的簡單方法來形成貫通電極 132、133，因此可謀求工程的簡素化。更因爲在埋入膏P 時使用有底穴的穴部13 0a、131a，所以膏P的埋入作業容易’可謀求工程的簡素化。加上無浪費使用膏P之虞。而且，若根據本實施形態的製造方法，則可一次製造複數個上述壓電振動子101，因此可謀求低成本化。 -58- 201010272 (第4實施形態）以下，參照圖圖45〜圖63來說明本發明的第4實施形態。 .· 如圖45〜圖48所示，本實施形態的壓電振動子201 * 是形成以基底基板202及蓋體基板203來積層2層的箱狀，在內部的空腔C內收納有壓電振動片204之表面安裝型的壓電振動子。〇另外，在圖48中，爲了容易看圖面，省略了後述的激發電極215、拉出電極219、220、安裝電極216、217 及重疊金屬膜221的圖示。如圖49〜圖51所示，壓電振動片2 04是由水晶、鉅酸鋰或鈮酸鋰等的壓電材料所形成的音叉型的振動片，在被施加預定的電壓時振動。此壓電振動片2 04是具有：平行配置的一對的振動腕部210、211、及一體固定一對的振動腕部210、211的基參端側的基部212、及形成於一對的振動腕部210、211的外 ' 表面上而使一對的振動腕部210、211振動之由第1激發電極213及第2激發電極214所構成的激發電極215、及被電性連接至第1激發電極213及第2激發電極214的安裝電極216、217。並且，本實施形態的壓電振動片2 04是具備在一對的振動腕部210、211的兩主面上沿著振動腕部210、211的長度方向來分別形成的溝部218。此溝部218是從振動腕部2 1 0、2 1 1的基端側到大致中間附近形成。 -59- 201010272 由第1激發電極213及第2激發電極214所構成的激發電極215是使一對的振動腕部210、211以預定的共振頻率來振動於互相接近或離間的方向之電極，在一對的振動腕部210、211的外表面，分別被電性切離的狀態下被 ' 圖案化而形成。具體而言，如圖51所示，第1激發電極 · 213是主要形成於一方的振動腕部210的溝部218上及另 —方的振動腕部211的兩側面上，第2激發電極214是主要形成於一方的振動腕部210的兩側面上及另一方的振動 ❹ 腕部211的溝部218上。又，第1激發電極213及第2激發電極214是如圖49 及圖50所示，在基部212的兩主面上，分別經由拉出電極219、220來電性連接至安裝電極216、217。然後，壓電振動片204可經由此安裝電極216、217來施加電壓。另外，上述的激發電極215、安裝電極216、217及拉出電極219、220是例如藉由鉻（Cr)、鎳（Ni)、鋁（ A1)或鈦（Ti)等的導電性膜的被膜來形成者。眷在一對的振動腕部210、211的前端被覆有用以進行 ’ 調整（頻率調整）的重疊金屬膜221，使本身的振動狀態能夠在預定的頻率範圍內振動。另外，此重疊金屬膜221 是被分成：粗調頻率時使用的粗調膜221a、及微調時使用的微調膜221b。利用該等粗調膜221a及微調膜221b來進行頻率調整下，可將一對的振動腕部210、211的頻率收於裝置的標稱頻率的範圍內。如此構成的壓電振動片204是如圖46〜48所示，利 -60- 201010272 用金等的凸塊B在基底基板202的上面凸塊接合。更具體而言，在基底基板202的上面被圖案化的後述繞拉電極 236、237上所分別形成的各2個凸塊B上，一對的安裝電極216、217分別接觸的狀態下凸塊接合。藉此’壓電，振動片2 04是在從基底基板2 02的上面浮起的狀態下被支持，且安裝電極216、217與繞拉電極23 6、237分別形成電性連接的狀態。〇上述蓋體基板203是由玻璃材料、例如鈉鈣玻璃所構成的透明絕緣基板，如圖45、圖47及圖48所示’形成板狀。然後，在接合基底基板202的接合面側形成有容納壓電振動片204之矩形狀的凹部2 03a。此凹部203a是在兩基板202、203叠合時，收容壓電振動片204之形成空腔 C的空腔用凹部。而且，蓋體基板203是使該凹部203a 對向於基底基板202側的狀態下對基底基板202陽極接合〇 # 上述基底基板202是與蓋體基板203同樣地由玻璃材 * 料、例如鈉鈣玻璃所構成的透明絕緣基板，如圖45〜圖 48所示，以可對蓋體基板203疊合的大小來形成板狀。在此基底基板202形成有貫通基底基板202的一對通孔（貫通孔）230、231。此時，一對的通孔230、231是以能夠收於空腔C內的方式形成。更詳細說明，本實施形態的通孔230、231是形成一方的通孔230會位於被安裝的壓電振動片204的基部212側，另一方的通孔231會位於振動腕部210、211的前端側。又，本實施形態是舉朝 -61 - 201010272 基底基板202的下面漸漸縮徑的錐狀的通孔爲例來進行說明，但並非限於此情況，亦可爲筆直貫通基底基板202的通孔。無論如何只要貫通基底基板202即可。然後，在該等一對的通孔23 0、23 1中形成有以能夠 - 塡埋通孔230、23 1的方式形成的一對貫通電極232、233 . 。如圖52所示，該等貫通電極232、233是藉由含複數的金屬微粒子P1的膏P的硬化來形成者，擔負將通孔230 、231完全阻塞而維持空腔C內的氣密的同時，使後述的翁外部電極238、239與繞拉電極236、237導通的任務。另外，貫通電極232、233是在膏P中所含的複數個金屬微粒子P1互相接觸下，確保電氣導通性。又，本實施形態的金屬微粒子P1是舉藉由銅等來形成細長的纖維狀（非球形形狀）時爲例進行說明。在基底基板202的上面側（接合蓋體基板203的接合面側），如圖45〜圖48所示，藉由導電性材料（例如鋁 )，陽極接合用的接合膜235與一對的繞拉電極236、237 Φ 會被圖案化。其中接合膜235是以能夠包圍形成於蓋體基 ^ 板203的凹部203 a的周圍之方式沿著基底基板202的周緣形成。 —對的繞拉電極236、237是被圖案化成一對的貫通電極232、233中，可電性連接一方的貫通電極232與壓電振動片204的一方的安裝電極216，且可電性連接另一方的貫通電極233與壓電振動片204的另一方的安裝電極 217。更詳細說明，一方的繞拉電極236是以能夠位於壓 -62- 201010272 電振動片204的基部212的正下方之方式形成於一方的貫通電極232的正上方。又，另一方的繞拉電極237是從鄰接於一方的繞拉電極236的位置，沿著振動腕部210、211 ' 來繞拉至該振動腕部2 1 0、2 1 1的前端側之後，以能夠位 • 於另一方的貫通電極233的正上方之方式形成。然後，在該等一對的繞拉電極236、237上分別形成凸塊B，利用凸塊B來安裝壓電振動片204。藉此，壓電 • 振動片2 04的一方的安裝電極216會經由一方的繞拉電極 236來連通至一方的貫通電極232，另一方的安裝電極217 會經由另一方的繞拉電極23 7來連通至另一方的貫通電極 233 ° 在基底基板202的下面，如圖45、圖47及圖48所示，形成有對一對的貫通電極232、233分別電性連接的外部電極23 8、239。亦即，一方的外部電極238是經由一方的貫通電極232及一方的繞拉電極236來電性連接至壓電 © 振動片2 04的第1激發電極213。又，另一方的外部電極 ' 239是經由另一方的貫通電極233及另一方的繞拉電極 237來電性連接至壓電振動片204的第2激發電極214。在使如此構成的壓電振動子201動作時，是對形成於基底基板202的外部電極23 8、23 9施加預定的驅動電壓。藉此，可對由壓電振動片204的第1激發電極213及第 2激發電極214所構成的激發電極215流動電流，使一對的振動腕部210、211在接近•離間的方向以預定的頻率振動。然後，可利用此一對的振動腕部210、211的振動 -63- 201010272 ，作爲時刻源、控制訊號的時序源或參考訊號源等利用。其次，參照圖53所示的流程圖，在以下說明有關利用基底基板用晶圓240及蓋體基板用晶圓250來一次製造複數個上述壓電振動子201的製造方法。 ’ 首先，進行壓電振動片製作工程，製作圖49〜圖51 · 所示的壓電振動片204 (S210)。具體而言，首先，以預定的角度切割水晶的朗伯原石，而成爲一定厚度的晶圓。接著，面磨此晶圓而粗加工後，以蝕刻來去除加工變質層 e ，然後進行磨光劑等的鏡面硏磨加工，而成爲預定厚度的晶圓。接著，對晶圓實施洗淨等適當的處理後，藉由光微影技術以壓電振動片204的外形形狀來使晶圓圖案化，且進行金屬膜的成膜及圖案化，而形成激發電極215、拉出電極219、220、安裝電極216、217、重疊金屬膜221。藉此，可製作複數的壓電振動片204。並且，在製作壓電振動片2 04後，進行共振頻率的粗調。此是對重疊金屬膜221的粗調膜221a照射雷射光而 Θ 使一部分蒸發，令重量變化下進行。另外，有關更高精度 ' 調整共振頻率的微調是在安裝後進行。對於此會在往後說明。其次，進行第1晶圓製作工程（S220 )，其係將之後形成蓋體基板203的蓋體基板用晶圓250製作至即將進行陽極接合之前的狀態。首先，將鈉鈣玻璃硏磨加工至預定的厚度而洗淨後’如圖54所示，形成藉由蝕刻等來除去最表面的加工變質層之圓板狀的蓋體基板用晶圓250 ( -64- 201010272 S221)。其次，進行凹部形成工程（S222 )，其係於蓋體基板用晶圓250的接合面，藉由蝕刻等在行列方向形成複數個空腔用的凹部2 03a。在此時間點，完成第1晶圓製作 ,. 工程》 • 其次，進行第2晶圓製作工程（S23 0)，其係以和上述工程同時或前後的時序，將之後形成基底基板202的基底基板用晶圓240製作至即將進行陽極接合之前的狀態。 Φ 首先，如上述般，將鈉鈣玻璃硏磨加工至預定的厚度而洗淨後，形成藉由鈾刻等來除去最表面的加工變質層之圓板狀的基底基板用晶圓240 (S231)。其次，進行貫通電極形成工程（S232 )，其係於基底基板用晶圓240形成複數個一對的貫通電極232、23 3。在此詳細說明有關此貫通電極形成工程。首先，如圖55所示，進行貫通孔形成工程（S233 ) ，其係形成複數個貫通基底基板用晶圓240的一對通孔 ❹ 230、231。另外，圖55所示的點線Μ是表示以之後進行 * 的切斷工程所切斷的切斷線。在進行此工程時，從基底基板用晶圓240的上面側，例如以噴沙法進行。藉此，如圖 56所示，可形成朝基底基板用晶圓240的下面漸漸縮徑的剖面維狀的通孔230、231。又’之後疊合兩晶圓240、 250時，以能夠收於蓋體基板用晶圓250所形成的凹部 2 03 a內之方式形成複數個一對的通孔230、231。而且，形成一方的通孔230會位於壓電振動片204的基部212側，另一方的通孔231會位於振動腕部210、211的前端側 -65- 201010272 接著，如圖57所示，進行充塡工程（S234 )，其係於該等複數的通孔230、231內無間隙埋入含金屬微粒子 P1的膏P而阻塞通孔230、231。另外，在圖57〜圖60 * 是省略金屬微粒子P1的圖示。 · 接著，進行燒結工程（S23 5 )，其係以預定的溫度來燒結充塡後的膏P而使硬化。藉此，形成膏P會牢固地黏著於通孔230、231的內面之狀態。可是，硬化的膏P在響燒結時因爲未圖示之膏P內的有機物會蒸發，所以如圖 58所示，相較於充塡工程時，體積會減少。因此，在膏P 的表面，無論如何也會產生凹陷。於是，燒結後，如圖59所示，進行硏磨工程（S23 6 )，其係分別將基底基板用晶圓24 0的兩面只硏磨預定的厚度。藉由進行此工程，可同時硏磨藉由燒結而硬化的膏 P的兩面，因此可削去凹陷的部分的周圍。亦即，可使硬化的膏P的表面平坦化。 @ 因此，如圖60所示，可使基底基板用晶圓240的表 ^ 面與貫通電極232、233的表面形成幾乎面一致的狀態。藉由進行此硏磨工程，完成貫通電極形成工程。其次，進行接合膜形成工程（S23 7 )，其係於基底基板用晶圓24 0的上面使導電性材料圖案化，如圖61及圖 62所示，形成接合膜23 5，且進行繞拉電極形成工程（ S23 8 )，其係形成複數個分別電性連接至各一對的貫通電極232、233的繞拉電極236、237。另外，圖61及圖62 -66- 201010272 所示的點線Μ是表示在之後進行的切斷工程切斷的切斷線〇特別是貫通電極232、23 3如上述般表面無凹陷，對基底基板用晶圓240的上面幾乎形成面一致的狀態。因此 • ，在基底基板用晶圓240的上面被圖案化的繞拉電極236 、237是之間不使產生間隙等，以對貫通電極232、23 3密合的狀態連接。藉此，可使一方的繞拉電極23 6與一方的 φ 貫通電極232的導通性、及另一方的繞拉電極237與另一方的貫通電極23 3的導通性成爲確實者。在此時間點完成第2晶圓製作工程。 « 可是就圖53而言，是在接合膜形成工程（S23 7)之後，進行繞拉電極形成工程（S23 8 )的工程順序，但相反的，在繞拉電極形成工程（S23 8)之後，進行接合膜形成工程（S23 7)也無妨，或同時進行兩工程也無妨。無論哪個工程順序，皆可實現同一的作用效果。因此，即使因應 • 所需來適當變更工程順序也無妨。 * 其次，進行將製作後的複數個壓電振動片204分別經由繞拉電極236、237來接合於基底基板用晶圓240的上面之安裝工程（S240 )。首先，在一對的繞拉電極23 6、 237上分別形成金等的凸塊Β。然後，將壓電振動片204 的基部212載置於凸塊Β上之後，一邊將凸塊Β加熱至預定溫度，一邊將壓電振動片2 04推擠至凸塊Β。藉此，壓電振動片2 04會被凸塊Β機械性地支持，且安裝電極216 、217與繞拉電極23 6、23 7會形成電性連接的狀態。因此 -67- 201010272 ，在此時間點，壓電振動片204的一對激發電極215是形成對一對的貫通電極232、233分別導通的狀態。特別是因爲壓電振動片204被凸塊接合，所以是在從基底基板用晶圓240的上面浮起的狀態下被支持。 ’ 在壓電振動片204的安裝終了後，進行對基底基板用 · 晶圓240疊合蓋體基板用晶圓250的疊合工程（S250)。具體而言，一邊將未圖示的基準標記等作爲指標，一邊將兩晶圓240、250對準於正確的位置。藉此，所被安裝的 ❹ 壓電振動片204會形成被收容於以形成於基底基板用晶圓 240的凹部203a與兩晶圓240、250所包圍的空腔C內之狀態。疊合工程後，進行接合工程（S260 )，其係將疊合的 2片晶圓240、250放入未圖示的陽極接合裝置，在預定的溫度環境施加預定的電壓而陽極接合。具體而言，在接合膜23 5與蓋體基板用晶圓25 0之間施加預定的電壓。於是，在接合膜23 5與蓋體基板用晶圓250的界面產生電氣化 @ 學的反應，兩者會分別牢固地密合而被陽極接合。藉此， ‘ 可將壓電振動片2 04密封於空腔C內，可取得基底基板用晶圓24 0與蓋體基板用晶圓250接合之圖63所示的晶圓體260。另外，在圖63中，爲了容易看圖面，圖示分解晶圓體260的狀態，自基底基板用晶圓240省略接合膜235 的圖示。並且，圖63所示的點線Μ是表示以之後進行的切斷工程所切斷的切斷線。可是在進行陽極接合時，形成於基底基板用晶圓240 -68- 201010272 的通孔230、231是被貫通電極232、233所完全阻塞，因此不會有空腔C內的氣密經通孔230、23 1而受損的情形。特別是構成貫通電極232、23 3的膏P是牢固密合於通孔230、231的內面，因此可確實地維持空腔C內的氣密 • 〇然後，上述陽極接合終了後，進行外部電極形成工程 (S2 70 )，其係於上述陽極接合終了後，在基底基板用晶〇圓240的下面將導電性材料圖案化，形成複數個分別電性連接至一對的貫通電極232、233之一對的外部電極23 8、 239。藉由此工程，可利用外部電極23 8、23 9來使被密封於空腔C內的壓電振動片204作動。特別是進行此工程時也是與繞拉電極236、237的形成時同樣，對基底基板用晶圓240的下面，貫通電極232 、23 3是幾乎形成面一致的狀態，因此被圖案化的外部電極238、239是之間不使間隙等發生，以對貫通電極232、 ® 233密合的狀態連接。藉此，可使外部電極238、239與貫 * 通電極23 2、233的導通性成爲確實者。其次，進行微調工程（S280)，其係於晶圓體2 60的狀態，微調被密封於空腔C內的各個壓電振動子201的頻率，收於預定的範圍內。具體說明，是對形成於基底基板用晶圓240的下面之一對的外部電極238、239施加電壓，而使壓電振動片204振動。然後，一邊計測頻率，—邊通過蓋體基板用晶圓25 0從外部照射雷射光，使重疊金屬膜221的微調膜221b蒸發。藉此，一對的振動腕部210、 -69- 201010272 211的前端側的重量會變化’因此可將壓電振動片204的頻率微調成收於標稱頻率的預定範圍內。頻率的微調終了後’進行切斷工程（S29〇) ’其係沿著圖63所示的切斷線Μ來切斷所被接合的晶圓體260而 · 小片化。其結果，可一次製造複數個圖45所示的2層構 · 造式表面安裝型的壓電振動子201 ’其係於被互相接合的基底基板202與蓋體基板203之間形成的空腔C內密封壓電振動片204。 _ 另外，即使是進行切斷工程（S290 )而使各個的壓電振動子201小片化後’進行微調工程（S280 )的工程順序也無妨。但，如上述般，先進行微調工程（S280 )下，可在晶圓體260的狀態下進行微調，因此可更有效率地微調複數的壓電振動子201。因此可謀求總生產能力的提升。然後，進行內部的電氣特性檢査（S295 )。亦即，測定壓電振動片204的共振頻率、共振電阻値、驅動電平特性（共振頻率及共振電阻値的激發電力依存性）等而檢査〇。並且，一倂檢査絕緣電阻特性等。然後，最後進行壓電 ‘ 振動子201的外觀檢査，而最終檢査尺寸或品質等。藉此完成壓電振動子201的製造。特別是本實施形態的壓電振動子201是表面無凹陷，可在對基底基板202幾乎面一致的狀態下形成貫通電極 232、233，因此可使貫通電極232、233對繞拉電極236、 237及外部電極238、239確實地密合。其結果，可確保壓電振動片204與外部電極238、239的安定導通性，可提 -70- 201010272 升作動性能的可靠度而謀求高性能化。又，有關空腔C內的氣密也可確實地維持，所以此點也可謀求高品質化。加上，可藉由利用膏P的簡單方法來形成貫通電極232、 ' 23 3，因此可謀求工程的簡素化。 * 又，若根據本實施形態的製造方法，則可一次製造複數個上述壓電振動子201，因此可謀求低成本化。其次，一邊參照圖64 —邊說明有關本發明的振盪器 φ 之一實施形態。另外，在本實施形態是舉具備第1實施形態的壓電振動子1的振盪器爲例來進行說明。本實施形態的振盪器500，如圖64所示，以壓電振動子1爲構成電性連接至積體電路501的振盪子。此振盪器 500是具備有安裝有電容器等電子零件502的基板503。在基板503是安裝有振盪器用的上述積體電路501，在該積體電路501的附近安裝有壓電振動子1。該等電子零件 5 02、積體電路501及壓電振動子1是藉由未圖示的配線 • 圖案來分別電性連接。另外，各構成零件是藉由未圖示的 * 樹脂來予以模塑。在如此構成的振盪器500中，若對壓電振動子1施加電壓，則此壓電振動子1內的壓電振動片4會振動。此振動是根據壓電振動片4所具有的壓電特性來變換成電氣訊號，作爲電氣訊號而被輸入至積體電路501。所被輸入的電氣訊號是藉由積體電路501來作各種處理，作爲頻率訊號輸出。藉此，壓電振動子1具有作爲振盪子的功能。並且，將積體電路501的構成按照要求來選擇性地設 -71 - 201010272 定例如RTC ( real time clock ’即時時脈）模組等’藉此除了時鐘用單功能振盪器等以外，可附加控制該機器或外部機器的動作日或時刻，或提供時刻或日曆等的功能。如上所述，若根據本實施形態的振盪器500，則由於具備空腔C內的氣密確實且作動的可靠度會提升的高品質 ·. 的壓電振動子1，因此振盪器500本身也可同樣提高作動的可靠度而謀求高品質化。除此之外’可長期獲得安定且高精度的頻率訊號。 © 另外，雖是舉具備第1實施形態的壓電振動子1時爲例來進行說明，但即使使用其他實施形態的壓電振動子也可實現同樣的作用效果。其次，參照圖65說明本發明之電子機器之一實施形態。電子機器是以具有第1實施形態所示的壓電振動子1 之攜帶式資訊機器510爲例進行說明。首先，本實施形態之攜帶式資訊機器5 1 0是例如以行動電話爲代表，將以往技術的手錶加以發展、改良者。外 © 觀類似手錶，在相當於文字盤的部分配置液晶顯示器，可 * 使該畫面上顯示目前時刻等。此外，當作通訊機器加以利用時，是由手腕卸下，藉由內建在錶帶（band )的內側部分的揚聲器及麥克風，可進行與以往技術的行動電話相同的通訊。但是，與習知的行動電話相比較，極爲小型化及輕量化。其次，說明本實施形態之攜帶型資訊機器510的構成。如圖65所示，該攜帶型資訊機器510是具備：壓電振 -72- 201010272 由部部之作工計若振電化介部具部音來動子1、及用以供給電力的電源部511。電源部511是例如鋰二次電池所構成。在該電源部511是並聯連接有進行各種控制的控制部5 1 2、進行時刻等之計數的計時 ' 513、外部進行通訊的通訊部514、顯示各種資訊的顯示 • 5 1 5、及檢測各個功能部的電壓的電壓檢測部5 1 6。然後可藉由電源部511來對各功能部供給電力。控制部5 1 2是在於控制各功能部，而進行聲音資料〇送訊及收訊、目前時刻的計測或顯示等、系統整體的動控制。又，控制部521是具備：預先被寫入程式的ROM 讀出被寫入ROM的程式而執行的CPU、及作爲CPU的作區（work area)使用的RAM等。計時部513是具備：內建振盪電路、暫存器電路、數器電路及介面電路等之積體電路、及壓電振動子1。對壓電振動子1施加電壓，則壓電振動片4會振動，該動藉由水晶所具有的壓電特性來轉換成電氣訊號，作爲 ❹ 氣訊號而被輸入至振盪電路。振盪電路的輸出是被二値 ' ，藉由暫存器電路與計數器電路加以計數。然後，經由面電路，與控制部512進行訊號的送訊收訊，在顯示 515顯示目前時刻或目前日期或日曆資訊等。通訊部514是具有與以往的行動電話同樣的功能，備：無線部517、聲音處理部518、切換部519、放大 520、聲音輸出入部521、電話號碼輸入部522、來訊聲發生部523及呼叫控制記憶體部524。無線部517是將聲音資料等各種資料經由天線525 -73- 201010272 與基地台進行送訊收訊的處理。聲音處理部518是將由無線部517或放大部520所被輸入的聲音訊號進行編碼化及複號化。放大部520是將由聲音處理部518或聲音輸出入部521所被輸入的訊號放大至預定的位準。聲音輸出入部 ' 521是由揚聲器或麥克風等所構成，將來訊聲音或接電話 · 聲音擴音或將聲音集音。又，來訊聲音發生部523是按照來自基地台的叫出而生成來訊聲音。切換部519是限於來訊時，將與聲音處理 @ 部518相連接的放大部520切換成來訊聲音發生部523，藉此將在來訊聲音發生部5〗3所生成的來訊聲音經由放大部520而被輸出至聲音輸出入部521。另外，呼叫控制記憶體部524是儲存通訊的出發和到達呼叫控制的程式。又，電話號碼輸入部522是具備例如由〇至9之號碼按鍵及其他按鍵，藉由按下該等號碼按鍵等來輸入通話對方的電話號碼等。電壓檢測部5 1 6是在藉由電源部5 1 1來對控制部5 1 2 等各功能部施加的電壓低於預定値時，檢測其電壓降下且通知控制部512。此時之預定電壓値是作爲用以使通訊部 514安定動作所必要之最低限度的電壓而預先被設定的値 ’例如爲3 V左右。從電壓檢測部5 1 6接到電壓降下的通知之控制部512會禁止無線部517、聲音處理部518、切換部519及來訊聲音發生部523的動作。特別是消耗電力較大之無線部5 1 7的動作停止爲必須。更在顯示部5丨5顯示通訊部514因電池餘量不足而無法使用的內容。 -74- 201010272 亦即，藉由電壓檢測部5 1 6與控制部5 訊部514的動作，且將其內容顯示於顯示部可爲文字訊息，但以更爲直覺式的顯示而言 ' 部515的顯示面的上部所顯示的電話圖像 / (叉叉）符號。另外，通訊部514的功能的部分的電源性遮斷的電源遮斷部526，藉此可更確實J φ 5 1 4的功能。如上所述，若根據本實施形態的攜帶型，則由於具備空腔C內的氣密確實且作動的的高品質的壓電振動子1，因此攜帶型資訊樣可提高作動的可靠度而謀求高品質化。除期顯示安定且高精度的時鐘資訊。除此之外安定且高精度的時鐘資訊。另外，雖是舉具備第1實施形態的壓電 β 例來進行說明，但即使使用其他實施形態的 * 可實現同樣的作用效果。其次，參照圖66來說明有關本發明的實施形態。在本實施形態是舉具備第1實施動子1的電波時鐘爲例來進行說明。如圖66所示，本實施形態的電波時鐘電性連接至濾波器部531的壓電振動子1者包含時鐘資訊的標準電波來自動修正成正確之功能的時鐘。 12，可禁止通 515。該顯示，亦可在顯示 (icon )標註 X 爲具備可選擇也停止通訊部資訊機器510 可靠度會提升機器本身也同此之外，可長，可長期顯示振動子1時爲壓電振動子也電波時鐘之一形態的壓電振 5 3 0是具備被，爲具備接收的時刻而顯示 -75- 201010272 在日本國內是在福島縣（40kHz)及佐賀縣（60kHz) 具有用以傳送標準電波的送訊所（送訊局），分別傳送標準電波。40kHz或60kHz之類的長波是一倂具有在地表傳播的性質、及一面反射一面在電離層與地表傳播的性質，胃因此傳播範圍廣，以上述2個送訊所將日本國內全部網羅 · 〇以下，詳細說明有關電波時鐘53 0之功能的構成。天線5 32是接收40kHz或60kHz之長波的標準電波。參長波的標準電波是將被稱爲時間碼的時刻資訊，在40kHz 或60kHz的載波施加AM調變者。所接收到之長波的標準電波是藉由放大器533予以放大，藉由具有複數壓電振動子1的濾波器部531予以濾波、同調。本實施形態的壓電振動子1是分別具備具有與上述載波頻率相同之40kHz及60kHz的共振頻率的水晶振動子部 538 、 539 ° 此外，經濾波的預定頻率的訊號是藉由檢波、整流電 ® 路534來予以檢波解調。接著，經由波形整形電路535來取出時間碼，以CPU53 6予以計數。在CPU53 6中是讀取目前的年分、估算日、星期、時刻等資訊。所被讀取的資訊是反映在RTC5 3 7而顯示正確的時刻資訊。載波爲40kHz或60kHz，因此水晶振動子部5 3 8、539 是以具有上述音叉型構造的振動子較爲適合。另外，上述說明是以日本國內爲例加以顯示，但是長波之標準電波的頻率在海外並不相同。例如，在德國是使 -76- 201010272 用77.5ΚΗζ的標準電波。因此，將即使在海外也可對應的電波時鐘530組裝於攜帶式機器時，是另外需要與日本的情況相異的頻率的壓電振動子1。 ' 若利用本實施形態的電波時鐘5 3 0，則因爲具備空腔 - C內的氣密確實，作動的可靠度會提升之高品質的壓電振動子1，所以電波時鐘本身也可同樣提高作動的可靠度來謀求高品質化。除此以外，可長期穩定且高精度地計數時 φ 刻。另外，雖是舉具備第1實施形態的壓電振動子1時爲例來進行說明，但即使使用其他實施形態的壓電振動子也可實現同樣的作用效果。另外，本發明的技術範圍並非限於上述實施形態，可在不脫離本發明的主旨範圍中施加各種的變更。例如，上述各實施形態是舉一在振動腕部的兩面形成有溝部之附溝的壓電振動片爲例來說明壓電振動片，但即 © 使是無溝部的型態的壓電振動片也無妨。但，藉由形成溝 * 部，在使預定的電壓施加於一對的激發電極時，可提高一對的激發電極間的電場效率，因此可更抑制振動損失而使振動特性更爲提升。亦即，可更降低CI値（Crystal Impedance )，進而能夠謀求壓電振動片的更高性能化。基於此點，較理想是形成溝部。又，上述各實施形態是舉音叉型的壓電振動片爲例來進行說明，但並非限於音叉型。例如，即使爲厚滑振動也無妨。 -77- 201010272 又，上述各實施形態是經由接合膜來陽極接合基底基板與蓋體基板，但並非限於陽極接合。但藉由陽極接合，可牢固接合兩基板，因此較理想。又，上述各實施形態是將壓電振動片予以凸塊接合， ’ 但並非限於凸塊接合。例如，即使是藉由導電性黏合劑來 - 接合壓電振動片也無妨。但藉由凸塊接合，可使壓電振動片從基底基板的上面浮起，因此可自然保持振動所必要的最低限度的振動間隙。因此，凸塊接合較爲理想。 _ 又，上述各實施形態是將貫通電極設爲一對來進行，但即使是設置1個，或3個以上也無妨。又，上述各實施形態中進行充塡工程時，即使在將膏脫泡處理（例如遠心脫泡或抽真空等）後埋入也無妨。在如此事前將膏脫泡處理下，可充塡極力未含氣泡等的膏。因此，即使進行燒結工程，還是可儘可能抑制膏的體積減少。因此，可減少之後進行的硏磨量，削減硏磨所花費的時間，進而能夠效率佳地製造壓電振動子。 0 又’上述各實施形態中，如圖67所示，即使使用混 ^ 合熱膨脹率與基底基板（基底基板用晶圓）同一的玻璃料 (粒體）G的膏P也無妨。如此一來，燒結時，可使膏p 的熱膨脹接近基底基板用晶圓的熱膨脹。因此，兩者之間難以產生因熱膨脹差所造成的間隙等，可使兩者形成更密合的狀態。其結果，可形成更提高氣密性的貫通電極，進而能夠提升長期的氣密可靠度。另外，使玻璃料G混合的比例，較理想是在不阻礙金屬微粒子P1的導電性的程度 -78- 201010272 範圍，儘可能多放。又，上述各實施形態是舉使用含細長纖維狀的金屬微粒子的膏時爲例，但金屬微粒子的形狀即使爲其他的形狀 ' 也無妨。例如球形也無妨。此情況也是在金屬微粒子彼此 ^ 相接觸時，因爲點接觸，所以可同樣地確保電性的導通性。但，像細長的纖維狀那樣，藉由使用非球形形狀的金屬微粒子，當彼此相接觸時，非點接觸，而是容易形成線接 φ 觸。因此，可更提高貫通電極的電性導通性，所以使用含非球形的金屬微粒子的膏，要比球形更理想。另外，金屬微粒子P1爲非球形時，例如可爲圖68 A 所示的長方形狀、或圖68B所示的波形狀，或圖68C所示的剖面星形，或圖68D所示的剖面十字型。又，上述各實施形態是以能夠朝外部電極漸漸縮徑的方式來設置貫通電極，但相反的，亦可如圖69所示般，朝外部電極38、39漸漸擴徑的方式設置貫通電極32、33 Φ 。此情況，可實現同様的作用效果。 * 又，上述第1及第2實施形態是在下面硏磨工程時，將基底基板用晶圓的下面硏磨至到達保持孔的底爲止，但並非限於此情況，即使硏磨至基底基板用晶圓的更上面側也無妨。又，上述第1及第2實施形態是在保持孔形成工程時，將保持孔形成基底基板用晶圓的下面側成底之類的有底穴狀，但即使爲其他的形狀也無妨。例如在基底基板用晶圓的厚度方向形成的貫通孔狀也無妨。但，此情況，在下 -79- 201010272 面硏磨工程中，必須使硏磨量依燒結時減少的膏的體積來變化，在充塡工程中，膏的埋入作業會變得繁雜，因此較理想保持孔爲有底狀。又，上述第3實施形態是在下面硏磨工程時，將基底基板用晶圓的下面硏磨至到達穴部的底的位置爲止，但並非限於此，即使是硏磨量T3以上硏磨也無妨。【圖式簡單說明】 ® 圖1是表示本發明的壓電振動子的第1實施形態的外觀立體圖。圖2是圖1所示的壓電振動子的內部構成圖，在卸下蓋體基板的狀態下由上方來看壓電振動片的圖。圖3是沿著圖2所示的A-A線的壓電振動子的剖面圖〇圖4是圖1所示的壓電振動子的分解立體圖。 _ 圖5是構成圖1所示的壓電振動子的壓電振動片的上 β 面圖。圖6是圖5所示的壓電振動片的下面圖。圖7是圖5所示的剖面箭號Β-Β線圖。圖8是圖3所示的貫通電極的擴大圖，顯示含複數的金屬微粒子的膏。圖9是表示製造圖1所示的壓電振動子時的流程之流程圖。圖10是表示沿著圖9所示的流程圖來製造壓電振動 -80- 201010272 子時的一工程圖’顯示在成蓋體基板的基礎的蓋體基板用晶圓形成複數的凹部的狀態圖。圖11是表示沿著圖9所示的流程圖來製造壓電振動 ' 子時的一工程圖，顯示在成基底基板的基礎的基底基板用 * 晶圓形成複數的保持孔的狀態圖。圖12是由基底基板用晶圓的剖面來看圖11所示的狀態圖。 Φ 圖13是沿著圖9所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖12所示的狀態後，使膏充塡於保持孔內的狀態圖。圖14是沿著圖9所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖13所示的狀態後，暫時燒結膏的狀態圖。圖15是沿著圖9所示的流程圖來製造壓電振動子時 _ 的一工程圖，顯示在圖14所示的狀態後，在保持孔內補 • S膏的狀態圖。圖16是沿著圖9所示的流程圖來製造壓電振動子時的一工程圖，顯不在圖15所不的狀態後，正式燒結膏的狀態圖。圖17是沿著圖9所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖16所示的狀態後，硏磨基底基板用晶圓的兩面的狀態圖。圖18是沿著圖9所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖17所示的狀態後，無凹陷在基底 -81 · 201010272 基板用晶圓的表面形成面一致的貫通電極。圖19是沿著圖9所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖18所示的狀態後，在基底基板用晶圓的上面使接合膜及繞拉電極圖案化的狀態圖。圖20是圖19所示狀態的基底基板用晶圓的全體圖。 · 圖21是表示沿著圖9所示的流程圖來製造壓電振動子時的一工程圖，在將壓電振動片收容於空腔內的狀態下，基底基板用晶圓與蓋體基板用晶圓被陽極接合的晶圓體 @ 的分解立體圖。圖22是表示在本發明的第2實施形態中，製造圖1 所示的壓電振動子時的流程的流程圖。圖23是沿著圖22所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖14所示的狀態後，硏磨基底基板用晶圓的兩面的狀態圖。圖24是沿著圖22所示的流程圖來製造壓電振動子時 _ 的一工程圖，顯示圖23所示狀態後的狀態圖。 β 圖25是沿著圖22所示的流程圖來製造壓電振動子時的一工程圖，顯示圖24所示的狀態後，正式燒結膏的狀態圖。圖26是表示本發明的壓電振動子的第3實施形態的外觀立體圖。圖27是圖26所示的壓電振動子的內部構成圖，在卸下蓋體基板的狀態下由上方來看壓電振動片的圖。圖28是沿著圖27所示的Α-Α線的壓電振動子的剖面 -82- 201010272 圖。圖29是圖26所示的壓電振動子的分解立體圖。圖30是構成圖26示的壓電振動子的壓電振動片的上 .. 面圖。 • 圖31是圖30所示的壓電振動片的下面圖。圖32是圖30所示的剖面箭號B-B線圖。圖33是圖28所示的貫通電極的擴大圖，顯示含複數〇的金屬微粒子的膏。圖34是表示製造圖26所示的壓電振動子時的流程之流程圖。圖35是表示沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，顯示在成蓋體基板的基礎的蓋體基板用晶圓形成複數的凹部的狀態圖。圖36是表示沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，顯示在成基底基板的基礎的基底基板用 0 晶圓形成複數的穴部的狀態圖。 . 圖37是由基底基板用晶圓的剖面來看圖36所示的狀態圖。圖38是沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖37所示的狀態後，使膏充塡於穴部內的狀態圖。圖39是沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖38所示的狀態後，藉由燒結來使膏硬化的狀態圖。 -83- 201010272 圖40是沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖39所示的狀態後，硏磨基底基板用晶圓的兩面的狀態圖。圖41是沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖40所示的狀態後，無凹陷在基底 · 基板用晶圓的表面形成面一致的貫通電極。圖42是沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖41所示的狀態後，在基底基板用參晶圓的上面使接合膜及繞拉電極圖案化的狀態圖。圖43是圖42所示狀態的基底基板用晶圓的全體圖。圖44是表示沿著圖34所示的流程圖來製造壓電振動子時的一工程圖，在將壓電振動片收容於空腔內的狀態下，基底基板用晶圓與蓋體基板用晶圓被陽極接合的晶圓體的分解立體圖。圖45是表示本發明的壓電振動子的第4實施形態的外觀立體圖。 ⑩ 圖46是圖45所示的壓電振動子的內部構成圖，在卸 ~ 下蓋體基板的狀態下由上方來看壓電振動子的圖。圖47是沿著圖46所示的A-A線的壓電振動子的剖面圖。圖48是圖45所示的壓電振動子的分解立體圖。圖49是構成圖45所示的壓電振動子的壓電振動片的上面圖。圖50是圖49所示的壓電振動片的下面圖。 -84- 201010272 圖51是圖49所示的剖面箭號B-B線圖。圖52是圖47所示的貫通電極的擴大圖，顯示含複數的金屬微粒子的胥。 / 圖53是表示製造圖45所示的壓電振動子時的流程之 • 流程圖。圖54是表示沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，顯示在成蓋體基板的基礎的蓋體基板用 0 晶圓形成複數的凹部的狀態圖。圖55是表示沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，顯示在成基底基板的基礎的基底基板用晶圓形成一對的通孔的狀態圖。圖56是由基底基板用晶圓的剖面來看圖55所示的狀態圖。圖57是沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖56所示的狀態後，使膏充塡於通 • 孔內的狀態圖。，圖58是沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖57所示的狀態後’藉由燒結來使膏硬化，形成貫通電極的狀態圖。圖59是沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖58所示的狀態後’硏磨基底基板用晶圓的兩面的狀態圖° 圖60是沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖59所的狀態後’無凹陷在基底 -85- 201010272 基板用晶圓的表面形成面一致的貫通電極。圖61是沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，顯示在圖60所示的狀態後，在基底基板用晶圓的上面使接合膜及繞拉電極圖案化的狀態圖。圖62是圖61所示狀態的基底基板用晶圓的全體圖。 · 圖63是表示沿著圖53所示的流程圖來製造壓電振動子時的一工程圖，在將壓電振動片收容於空腔內的狀態下，基底基板用晶圓與蓋體基板用晶圓被陽極接合的晶圓體 ® 的分解立體圖。圖64是表示本發明的振盪器之一實施形態的構成圖〇圖65是表示本發明的電子機器之一實施形態的構成圖。圖66是表示本發明的電波時鐘之一實施形態的構成圖。 . 圖67是表示本發明的膏的變形例的擴大圖。 « 圖68 A是表示本發明的金屬微粒子的變形例的圖’顯示形成長方形的金屬微粒子。圖68 B是表示本發明的金屬微粒子的變形例的圖’顯示形成波形狀的金屬微粒子。圖68 C是表示本發明的金屬微粒子的變形例的圖’ _ 示形成剖面星形的金屬微粒子。圖68 D是表示本發明的金屬微粒子的變形例的圖’顯示形成剖面十字形的金屬微粒子。 -86- 201010272 圖69是表示本發明的壓電振動子的變形例的剖面圖〇圖70是以往的壓電振動子的內部構成圖’在卸下蓋 * 體基板的狀態下由上方來看壓電振動片的圖。 ‘ 圖71是圖70所示的壓電振動子的剖面圖。【主要元件符號說明】參 B :凸塊 C :空腔 G :玻璃料（粒體） P :膏 P 1 :金屬微粒子 1、 101、201 :壓電振動子 2、 102、202 :基底基板 . 3、103、203 :蓋體基板 ® 3a、l〇3a、203 a:空腔用的凹部 4、1 04、204 :壓電振動片 30a、31a :保持孔 35、 135、235 :接合膜 36、 37、136、137、236、237 ：繞拉電極 38、39、138、139、238、239:外部電極 40、140、240 :基底基板用晶圓 50、150、250 :蓋體基板用晶圓 130a、13 la :穴部 -87- 201010272 23 0、231 :通孔（貫通孔） 500 :振盪器 501:振盪器的積體電路 510:攜帶型資訊機器（電子機器） ^ 513:電子機器的計時部 ’ 53 0 :電波時鐘 531 :電波時鐘的濾波器部 φFurther, as shown in Fig. 40, the following honing process (S136) is performed at the same time as or before the honing process, and the lower surface of the Φ wafer 140 for honing the base substrate is passed through the hole portions 130a and 131a. At least the hardened paste P* is exposed. The lower honing process of the present embodiment is honed until reaching the bottom of the hole portions 13 0a, 131a. Thereby, as shown in Fig. 41, the paste P hardened in the cavity portions 130a, 131a is exposed to the lower surface. By performing the following honing process, the via holes 130a and 131a formed in one of the pair of base substrate wafers 140 are formed, and the through holes 130 and 131 penetrating the base substrate wafer 140 are formed, and the cured paste P is formed. A pair of through electrodes 132, 133. Further, similarly to the above honing process, on the lower surface of the base substrate wafer 140, the surface of the base substrate wafer 140 and the surface of the cured paste P may be in a state in which the surfaces of the cured paste P are aligned. The through electrode forming process is completed by performing the above honing process and the following honing process. Next, a conductive material pattern is formed on the upper surface of the base substrate wafer 140, and as shown in FIGS. 42 and 43, a bonding/film formation process for forming the bonding film 135 is performed (S137), and a plurality of windings are formed. The winding electrodes of the pull electrodes 136 and 137 are formed (S138), and the winding electrodes 136 and 137 are electrically connected to the pair of through electrodes 132 and 133, respectively. Further, the dotted line 图 shown in Fig. 42 and Fig. 43 is a cutting line which is cut by a cutting process which is performed later. In particular, the through electrode 1 3 2, 1 3 3. As described above, the surface is not recessed, and the upper surface of the base substrate wafer 140 is almost in the same state. Therefore, the wrap electrodes 136 and 137 which are patterned on the upper surface of the base substrate wafer 140 are connected to each other without causing a gap or the like to be in contact with the through electrodes 132 and 133. Thereby, the conductivity between one of the winding electrodes 136 and one of the through electrodes 132 and the conductivity of the other of the winding electrodes 137 and the other of the through electrodes 133 can be made reliable. At this point in time, the second wafer fabrication project was completed. However, in the case of FIG. 34, after the bonding film forming process (S137), the engineering sequence of the winding electrode forming process (S138) is performed, but conversely, after the winding electrode forming process (S138), the bonding film formation is performed. It is no problem to work on the project (S137), or to carry out two projects at the same time. The same effect can be achieved regardless of the engineering order. Therefore, it is possible to change the engineering order as appropriate. -54-201010272 Next, the plurality of piezoelectric vibrating reeds 104 after fabrication are bonded to the upper surface of the base substrate wafer 140 via the wrap electrodes 136 and 137, respectively (S140). First, bumps B of gold or the like are formed on the pair of winding electrodes 136 and 137, respectively. Then, the piezoelectric vibrating piece 104 is used. After the base portion 112 is placed on the bump B, the piezoelectric vibrating piece 104 is pushed to the bump B while the bump B is heated to a predetermined temperature. Thereby, the piezoelectric vibrating piece 1?4 is mechanically supported by the bump B, and the mounting electrodes 116?, 117 and the winding electrodes 136, 137 are electrically connected. Therefore, at this point of time, the pair of excitation electrodes 1 15 of the piezoelectric vibrating piece 104 are in a state in which the pair of through electrodes 1 3 2, 1 3 3 are respectively turned on. In particular, since the piezoelectric vibrating reed 104 is bonded by bumps, it is supported in a state of being floated from the upper surface of the base substrate wafer 140. After the mounting of the piezoelectric vibrating reed 104 is completed, a superimposing process of superposing the wafer 150 for a cover substrate on the wafer for base substrate 140 is performed (S150). Specifically, the two wafers 140 and 150 are aligned at the correct positions while using a reference mark or the like (not shown) as an index. Thereby, it is installed. The piezoelectric vibrating reed 1b is formed in a state of being housed in the cavity C surrounded by the recess 103a formed in the base substrate wafer 140 and the two wafers 140, 150. After the superposition process, a bonding process (S160) is performed in which two stacked wafers 140, 150 are placed in an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature environment to be anodically bonded. Specifically, a predetermined voltage is applied between the bonding film 135 and the lid substrate wafer 150. Then, an electrification reaction occurs between the bonding film 135 and the wafer 150 for the lid substrate, and the two are firmly adhered to each other and are anodically bonded. Thereby, the piezoelectric vibrating piece 104 can be sealed in the cavity C, and the wafer body 160 shown in Fig. 44 in which the base substrate wafer 140 and the lid substrate wafer 150 are joined can be obtained. In addition, in FIG. 44, the state in which the crystal and the round body 160 are decomposed is illustrated in order to facilitate the drawing, and the illustration of the bonding film 135 is omitted from the base substrate wafer 140. Further, the dotted line 图 shown in Fig. 44 is a cutting line which is cut by a cutting process which is performed later. However, when the anodic bonding is performed, the through holes 130 and 131 formed in the base substrate wafer 140 φ are completely blocked by the through electrodes 132 and 133, so that there is no airtight through hole 1 3 0 in the cavity C. , 1 3 1 and the situation of damage. In particular, since the crucibles constituting the through electrodes 132 and 133 are firmly adhered to the inner surfaces of the through holes 130 and 131, the airtightness in the cavity C can be surely maintained, and then the external electrode is formed after the anodic bonding is completed. In the step (S170), after the anodic bonding is completed, the conductive material is patterned on the lower surface of the base substrate wafer 140 to form a plurality of pairs of through electrodes 132 and 133 that are electrically connected to a pair. External electrodes 138, '139. By this engineering, the external electrodes 138, 139 can be used to operate the piezoelectric vibrating reed 104 sealed in the cavity C. In particular, in the case of performing the above-described process, similarly to the formation of the winding electrodes 136 and 137, the through electrodes 132 and 133 are in a state in which the surface of the base substrate wafer 140 is almost formed, and the patterned external electrode 138 is formed. Between 139 and 139, a gap or the like is not generated, and the through electrodes 132 and 133 are in close contact with each other. Thereby, the conductivity between the external electrodes 138 and 139 and the through electrodes 56 and 133 can be made reliable. Next, the fine adjustment process (S180) is performed in the state of the wafer body 160, and the frequency of each piezoelectric vibrator 101 sealed in the cavity C is finely adjusted to be within a predetermined range. Specifically, the piezoelectric vibrating piece 1〇4 is vibrated by applying a voltage to the external electrodes 138 and 139 formed on one of the lower surfaces of the wafer 140. Then, while measuring the frequency, the laser light is irradiated from the outside through the cover substrate wafer 150, and the fine adjustment film 121b of the overlap metal φ film 121 is evaporated. Thereby, the weight of the front end side of the pair of vibrating arms 110 and 111 changes, so that the frequency of the piezoelectric vibrating piece 1〇4 can be finely adjusted to be within a predetermined range of the nominal frequency. After the fine adjustment of the frequency is completed, the cutting process (S190) is performed, and the bonded wafer body 160 is cut along the cutting line shown in Fig. 44 to be small. As a result, a plurality of two-layered surface mount type piezoelectric vibrators 101 shown in FIG. 26 can be manufactured at one time in the cavity C formed between the base substrate 102 and the lid substrate 103 which are bonded to each other. Sealing pressure Φ Electrical vibrating piece 104. In addition, even if the cutting operation (S1 90) is performed and the piezoelectric vibrators 101 are small, the engineering sequence of the fine adjustment (S180) may be performed. However, as described above, fine adjustment is performed in the fine adjustment process (S180), and fine adjustment can be performed in the state of the wafer 160, so that the plurality of piezoelectric vibrators 101 can be finely adjusted more efficiently. Therefore, the total production capacity can be improved. Then, an internal electrical characteristic check (s 195) is performed. In other words, the resonance frequency, the resonance resistance 値, the drive level characteristics (resonance frequency and the excitation power dependence of the resonance resistance )) of the piezoelectric vibrating piece 104 are measured, and the inspection is performed -57-201010272. Also, check the insulation resistance characteristics and so on. Then, the appearance inspection of the piezoelectric vibrator 101 is finally performed, and the size, quality, and the like are finally checked. Thereby, the manufacture of the piezoelectric vibrator 101 is completed. In particular, the piezoelectric vibrator 101 of the present embodiment has no recess on the surface, and the through electrodes 132 and 133 can be formed in a state in which the base substrate 102 is almost flush with each other. Therefore, the through electrodes 132 and 133 can be wound around the pull electrode 136. 137 and the external electrodes 138, 139 are surely adhered. As a result, the stability of the piezoelectric vibrating piece 104 and the external electrodes 138 and 139 can be ensured, and the reliability of the lifting performance can be improved to achieve high performance. Further, since the airtightness in the cavity C can be surely maintained, it is also possible to achieve high quality. Further, in the honing process, the volume of the paste P which is not reduced during sintering is set, and the amount of honing can be set according to the thickness of the base substrate wafer 140 and the depth of the hole portions 130a and 131a. That is, as shown in Fig. 40, the honing amount T3 can be easily set by the thickness T1 of the base substrate wafer 140 and the depth T2 of the hole portions 130a and 131a. Therefore, regarding the following honing work, it is not necessary to confirm the state of the paste P and then honing it, as long as the predetermined amount is honed. Therefore, it is possible to prevent honing or excessive honing. Further, since the through electrodes 132 and 133 can be formed by a simple method using the paste P, the engineering can be simplified. Further, since the cavities 130a and 131a having the cavitation are used when the paste P is buried, the embedding operation of the paste P is easy, and the engineering can be simplified. Plus no waste, use the paste P. Further, according to the manufacturing method of the present embodiment, a plurality of the piezoelectric vibrators 101 can be manufactured at one time, so that the cost can be reduced. -58-201010272 (Fourth Embodiment) A fourth embodiment of the present invention will be described below with reference to Figs. 45 to 63. . As shown in FIG. 45 to FIG. 48, the piezoelectric vibrator 201* of the present embodiment is formed in a box shape in which two layers are laminated on the base substrate 202 and the lid substrate 203, and the piezoelectric body is housed in the internal cavity C. A surface mount type piezoelectric vibrator of the vibrating piece 204. Further, in Fig. 48, in order to facilitate the drawing, the excitation electrode 215, the extraction electrodes 219 and 220, the mounting electrodes 216 and 217, and the overlapping metal film 221 which will be described later are omitted. As shown in Fig. 49 to Fig. 51, the piezoelectric vibrating piece 206 is a tuning-fork type vibrating piece formed of a piezoelectric material such as crystal, lithium silicate or lithium niobate, and vibrates when a predetermined voltage is applied. The piezoelectric vibrating piece XX04 has a pair of vibrating arms 210 and 211 arranged in parallel, and a base portion 212 on the base end side of the pair of vibrating arms 210 and 211 integrally formed, and a pair of The excitation electrode 215 composed of the first excitation electrode 213 and the second excitation electrode 214 that vibrates the pair of vibration arms 210 and 211 on the outer surface of the vibration arm portions 210 and 211 is electrically connected to the first 1 The mounting electrodes 216 and 217 of the excitation electrode 213 and the second excitation electrode 214. In the piezoelectric vibrating piece 206 of the present embodiment, the groove portion 218 which is formed along the longitudinal direction of the vibrating arms 210 and 211 on both main surfaces of the pair of vibrating arms 210 and 211 is provided. The groove portion 218 is formed from the proximal end side of the vibrating arms 2 1 0 and 2 1 1 to the vicinity of the substantially middle portion. -59- 201010272 The excitation electrode 215 composed of the first excitation electrode 213 and the second excitation electrode 214 is an electrode that vibrates the pair of vibration arm portions 210 and 211 at a predetermined resonance frequency in a direction approaching or separating from each other. The outer surfaces of the pair of vibrating arms 210 and 211 are formed by being patterned in a state of being electrically separated from each other. Specifically, as shown in FIG. 51, the first excitation electrode 213 is mainly formed on the groove portion 218 of one of the vibration arm portions 210 and on both sides of the other vibration arm portion 211, and the second excitation electrode 214 is It is mainly formed on both side faces of one of the vibrating arms 210 and on the groove 218 of the other vibrating arm portion 211. Further, as shown in Figs. 49 and 50, the first excitation electrode 213 and the second excitation electrode 214 are electrically connected to the mounting electrodes 216 and 217 via the pull-out electrodes 219 and 220 on both main surfaces of the base portion 212, respectively. Then, the piezoelectric vibrating piece 204 can apply a voltage via the mounting electrodes 216, 217. Further, the excitation electrode 215, the mount electrodes 216 and 217, and the pull-out electrodes 219 and 220 are, for example, a film of a conductive film such as chromium (Cr), nickel (Ni), aluminum (Al) or titanium (Ti). Come form.重叠 The front end of the pair of vibrating arms 210 and 211 is covered with an overlapping metal film 221 for performing 'adjustment (frequency adjustment) so that its own vibration state can vibrate within a predetermined frequency range. Further, the superposed metal film 221 is divided into a coarse adjustment film 221a used when the frequency is coarsely adjusted, and a fine adjustment film 221b used when the frequency is finely adjusted. By performing the frequency adjustment using the coarse adjustment film 221a and the fine adjustment film 221b, the frequencies of the pair of vibration arms 210 and 211 can be within the range of the nominal frequency of the device. As shown in FIGS. 46 to 48, the piezoelectric vibrating reed 204 configured as described above is bonded to the upper surface of the base substrate 202 by bumps B of gold or the like using a bump B of 60-201010272. More specifically, in each of the two bumps B formed on the winding electrodes 236 and 237 which are patterned on the upper surface of the base substrate 202, the pair of mounting electrodes 216 and 217 are respectively in contact with each other. Engage. Thereby, the piezoelectric element vibrating piece 206 is supported in a state of being floated from the upper surface of the base substrate 206, and the mounting electrodes 216 and 217 and the winding electrodes 23, 237 are electrically connected to each other. The cover substrate 203 is a transparent insulating substrate made of a glass material such as soda lime glass, and is formed in a plate shape as shown in Figs. 45, 47 and 48. Then, a rectangular recessed portion 203a accommodating the piezoelectric vibrating piece 204 is formed on the joint surface side of the bonded base substrate 202. This concave portion 203a is a cavity recess for accommodating the cavity C of the piezoelectric vibrating reed 204 when the two substrates 202 and 203 are overlapped. Further, the lid substrate 203 is anodically bonded to the base substrate 202 in a state in which the concave portion 203a is opposed to the base substrate 202. The base substrate 202 is made of a glass material such as soda calcium in the same manner as the lid substrate 203. As shown in FIGS. 45 to 48, the transparent insulating substrate made of glass is formed into a plate shape so as to be superposed on the lid substrate 203. A pair of through holes (through holes) 230, 231 penetrating the base substrate 202 are formed in the base substrate 202. At this time, the pair of through holes 230 and 231 are formed so as to be receivable in the cavity C. More specifically, in the through holes 230 and 231 of the present embodiment, one of the through holes 230 is formed on the base portion 212 side of the piezoelectric vibrating piece 204 to be mounted, and the other through hole 231 is located on the vibrating arms 210 and 211. Front side. Further, in the present embodiment, a tapered through hole whose diameter is gradually reduced toward the lower surface of the base substrate 202 is described as an example. However, the present invention is not limited thereto, and may be a through hole penetrating straight through the base substrate 202. In any case, it is sufficient to penetrate the base substrate 202. Then, a pair of through electrodes 232 and 233 which are formed so as to be able to bury the through holes 230 and 23 1 are formed in the pair of through holes 23 0 and 23 1 . . As shown in FIG. 52, the through electrodes 232 and 233 are formed by curing the paste P containing the plurality of metal fine particles P1, and are completely blocked by the through holes 230 and 231 to maintain the airtightness in the cavity C. At the same time, the tasks of the external electrodes 238 and 239 to be described later and the winding electrodes 236 and 237 are turned on. Further, the through electrodes 232 and 233 are in contact with each other in the plurality of metal fine particles P1 contained in the paste P to ensure electrical continuity. Further, the metal fine particles P1 of the present embodiment will be described as an example in which a slender fiber shape (non-spherical shape) is formed by copper or the like. On the upper surface side of the base substrate 202 (on the joint surface side of the bonded cover substrate 203), as shown in FIGS. 45 to 48, a bonding film 235 for anodic bonding and a pair of windings are formed of a conductive material (for example, aluminum). The pull electrodes 236, 237 Φ are patterned. The bonding film 235 is formed along the periphery of the base substrate 202 so as to surround the recess 203a formed on the cover substrate 203. The pair of winding electrodes 236 and 237 are patterned into a pair of through electrodes 232 and 233, and one of the through electrodes 232 and one of the piezoelectric vibrating pieces 204 are electrically connected to each other, and are electrically connected. The other through electrode 233 and the other mounting electrode 217 of the piezoelectric vibrating piece 204. More specifically, one of the wrap electrodes 236 is formed directly above one of the through electrodes 232 so as to be located immediately below the base portion 212 of the electric vibrating piece 204 of the voltage -62 - 201010272. Further, the other winding electrode 237 is wound from the vibration arm portions 210, 211' to the front end side of the vibration arm portion 2 1 0, 2 1 1 from a position adjacent to one of the winding electrodes 236. It is formed so as to be able to be positioned directly above the other through electrode 233. Then, bumps B are formed on the pair of winding electrodes 236, 237, respectively, and the piezoelectric vibrating piece 204 is mounted by the bumps B. Thereby, one of the mounting electrodes 216 of the piezoelectric vibrating piece 404 is connected to one of the through electrodes 232 via one of the winding electrodes 236, and the other mounting electrode 217 is passed through the other winding electrode 23 7 . The through electrode 233 ° that is connected to the other side is formed on the lower surface of the base substrate 202 as shown in FIGS. 45 , 47 , and 48 . The external electrodes 23 , 239 are electrically connected to the pair of through electrodes 232 and 233 , respectively. . That is, one of the external electrodes 238 is electrically connected to the first excitation electrode 213 of the piezoelectric/vibration piece 234 via one of the through electrodes 232 and one of the winding electrodes 236. Further, the other external electrode '239 is a second excitation electrode 214 that is electrically connected to the piezoelectric vibrating piece 204 via the other through electrode 233 and the other winding electrode 237. When the piezoelectric vibrator 201 thus constructed is operated, a predetermined driving voltage is applied to the external electrodes 23 8 and 23 9 formed on the base substrate 202. Thereby, an electric current flows through the excitation electrode 215 including the first excitation electrode 213 and the second excitation electrode 214 of the piezoelectric vibrating piece 204, and the pair of vibration arm portions 210 and 211 are predetermined in the direction of approaching and separating. The frequency of vibration. Then, the vibration -63-201010272 of the pair of vibration arms 210 and 211 can be utilized as a time source, a timing source of the control signal, or a reference signal source. Next, a method of manufacturing a plurality of the piezoelectric vibrators 201 using the base substrate wafer 240 and the lid substrate wafer 250 at a time will be described below with reference to the flowchart shown in FIG. First, the piezoelectric vibrating reed production process is performed, and the piezoelectric vibrating reed 204 shown in Figs. 49 to 51 is produced (S210). Specifically, first, the Lambertian original of the crystal is cut at a predetermined angle to become a wafer having a certain thickness. Next, the wafer is roughened by surface grinding, and the affected layer e is removed by etching, and then mirror-honed by a polishing agent or the like is performed to form a wafer having a predetermined thickness. Then, after the wafer is subjected to an appropriate treatment such as cleaning, the wafer is patterned by the external shape of the piezoelectric vibrating reed 204 by photolithography, and the metal film is formed and patterned to form an excitation. The electrode 215, the pull-out electrodes 219 and 220, the mount electrodes 216 and 217, and the metal film 221 are overlapped. Thereby, a plurality of piezoelectric vibrating pieces 204 can be produced. Further, after the piezoelectric vibrating piece 204 is produced, the resonance frequency is coarsely adjusted. This is because the coarse adjustment film 221a of the overlapping metal film 221 is irradiated with the laser light, and a part of the evaporation is performed, and the weight is changed. In addition, the fine adjustment of the adjustment of the resonance frequency with higher precision is performed after installation. This will be explained later. Then, a first wafer fabrication process (S220) is performed in which the lid substrate wafer 250 on which the lid substrate 203 is formed is formed immediately before the anodic bonding. First, after the soda-lime glass is honed to a predetermined thickness and washed, as shown in FIG. 54, a disk-shaped wafer for wafer cover substrate 250 is formed by etching or the like to remove the outermost processed layer. -64- 201010272 S221). Then, a concave portion forming process (S222) is performed on the joint surface of the lid substrate wafer 250, and a plurality of concave portions 203a for cavities are formed in the row and column direction by etching or the like. At this point in time, the first wafer fabrication was completed. [Second Engineering] Next, the second wafer fabrication process (S23 0) is performed, and the base substrate wafer 240 on which the base substrate 202 is formed is formed at the same time as or before the above-described process, until the anodic bonding is performed. status. Φ First, the soda-lime glass is honed to a predetermined thickness and washed to form a disk-shaped base substrate wafer 240 (S231) by removing the outermost process-affected layer by uranium engraving or the like (S231). ). Next, a through electrode forming process (S232) is performed to form a plurality of pairs of through electrodes 232 and 23 3 on the base substrate wafer 240. This through-electrode formation process is described in detail herein. First, as shown in Fig. 55, a through hole forming process (S233) is performed to form a plurality of pairs of via holes 230, 231 penetrating through the base substrate wafer 240. In addition, the dotted line shown in FIG. 55 is a cutting line which is cut by the cutting process which performed * afterwards. In carrying out this process, the upper surface side of the substrate substrate wafer 240 is subjected to, for example, a sandblasting method. Thereby, as shown in Fig. 56, through-holes 230 and 231 having a cross-sectional shape which is gradually reduced in diameter toward the lower surface of the base substrate wafer 240 can be formed. Further, when the two wafers 240 and 250 are stacked one after another, a plurality of pairs of through holes 230 and 231 are formed so as to be receivable in the concave portion 203 a formed by the lid substrate wafer 250. Further, one of the through holes 230 is formed on the base portion 212 side of the piezoelectric vibrating piece 204, and the other through hole 231 is located on the front end side of the vibrating arms 210 and 211 - 65 - 201010272. Next, as shown in FIG. 57, In the filling process (S234), the pastes P containing the metal fine particles P1 are buried in the plurality of through holes 230 and 231 without gaps, and the through holes 230 and 231 are blocked. In addition, in FIGS. 57 to 60*, the illustration of the metal fine particles P1 is omitted. Next, a sintering process (S23 5 ) is performed in which the paste P after the filling is sintered at a predetermined temperature to be cured. Thereby, the paste P is firmly adhered to the inner faces of the through holes 230, 231. However, since the hardened paste P evaporates at the time of sintering, the organic matter in the paste P (not shown) evaporates, so as shown in Fig. 58, the volume is reduced as compared with the charging process. Therefore, on the surface of the paste P, a depression is generated anyway. Then, after the sintering, as shown in Fig. 59, a honing process (S23 6) is performed, which hones the both sides of the base substrate wafer 24 with a predetermined thickness. By performing this process, both sides of the paste P which is hardened by sintering can be honed at the same time, so that the periphery of the depressed portion can be cut. That is, the surface of the hardened paste P can be flattened. Therefore, as shown in Fig. 60, the surface of the base substrate wafer 240 and the surfaces of the through electrodes 232 and 233 can be brought into a nearly uniform state. By performing this honing process, the through electrode formation process is completed. Next, a bonding film forming process (S23 7) is performed, and a conductive material is patterned on the upper surface of the base substrate wafer 240, and as shown in FIGS. 61 and 62, a bonding film 23 5 is formed and is wound. The electrode forming process (S23 8) forms a plurality of winding electrodes 236 and 237 which are electrically connected to the pair of through electrodes 232 and 233, respectively. In addition, the dotted line 图 shown in FIG. 61 and FIG. 62-66-201010272 is a cutting line which shows the cutting process cut after the cutting process, and the through-electrode 232 and 23 3 are not recessed on the surface as described above, and it is a base. The upper surface of the substrate wafer 240 has almost the same surface. Therefore, the winding electrodes 236 and 237 which are patterned on the upper surface of the base substrate wafer 240 are connected to each other without causing a gap or the like to be in contact with the through electrodes 232 and 23 3 . Thereby, the conductivity between one of the winding electrodes 23 6 and one of the φ through electrodes 232 and the conductivity of the other of the winding electrodes 237 and the other through electrode 23 3 can be made reliable. At this point in time, the second wafer fabrication project was completed. « However, as shown in Fig. 53, after the bonding film forming process (S23 7), the engineering sequence of the winding electrode forming process (S23 8) is performed, but conversely, after the winding electrode forming process (S23 8), It is also possible to carry out the bonding film forming process (S23 7), or to perform both processes at the same time. The same effect can be achieved regardless of the engineering order. Therefore, it is possible to change the engineering order as appropriate in response to the need. * Next, a plurality of piezoelectric vibrating reeds 204 after fabrication are bonded to the upper surface of the base wafer wafer 240 via the wrap electrodes 236 and 237 (S240). First, bumps of gold or the like are formed on the pair of winding electrodes 23 6 and 237, respectively. Then, after the base portion 212 of the piezoelectric vibrating piece 204 is placed on the bump, the piezoelectric vibrating piece 204 is pushed to the bump 一边 while the bump Β is heated to a predetermined temperature. Thereby, the piezoelectric vibrating piece 206 is mechanically supported by the bumps, and the mounting electrodes 216, 217 and the winding electrodes 23, 23, 7 are electrically connected. Therefore, at this point of time, the pair of excitation electrodes 215 of the piezoelectric vibrating reed 204 are in a state in which the pair of through electrodes 232 and 233 are respectively turned on. In particular, since the piezoelectric vibrating reed 204 is bonded by bumps, it is supported in a state of being floated from the upper surface of the base substrate wafer 240. After the mounting of the piezoelectric vibrating reed 204 is completed, the superimposing of the wafer 250 for the base substrate is performed on the base substrate wafer 240 (S250). Specifically, the two wafers 240 and 250 are aligned at the correct positions while using a reference mark or the like (not shown) as an index. As a result, the piezoelectric vibrating reed 204 to be mounted is formed in a state of being housed in the cavity C surrounded by the concave portion 203a of the base substrate wafer 240 and the two wafers 240 and 250. After the superposition process, a bonding process (S260) is performed in which two stacked wafers 240 and 250 are placed in an anodic bonding apparatus (not shown), and a predetermined voltage is applied in a predetermined temperature environment to be anodically bonded. Specifically, a predetermined voltage is applied between the bonding film 23 5 and the lid substrate wafer 25 0 . Then, an electrification reaction occurs at the interface between the bonding film 23 5 and the lid substrate wafer 250, and the two are firmly adhered to each other and are anodically bonded. As a result, the piezoelectric vibrating piece 204 can be sealed in the cavity C, and the wafer body 260 shown in Fig. 63 in which the base substrate wafer 204 and the lid substrate wafer 250 are joined can be obtained. In addition, in Fig. 63, in order to facilitate the drawing, the state in which the crystal body 260 is decomposed is illustrated, and the bonding film 235 is omitted from the base substrate wafer 240. Further, the dotted line 图 shown in Fig. 63 is a cutting line which is cut by a cutting process which is performed later. However, when the anodic bonding is performed, the through holes 230 and 231 formed in the base substrate wafer 240-68-201010272 are completely blocked by the through electrodes 232 and 233, so that there is no airtight through hole in the cavity C. 230, 23 1 and damaged. In particular, since the paste P constituting the through electrodes 232 and 23 3 is firmly adhered to the inner surfaces of the through holes 230 and 231, the airtightness in the cavity C can be surely maintained. Then, after the anodic bonding is completed, the external portion is externally formed. In the electrode forming process (S2 70), after the anodic bonding is completed, the conductive material is patterned on the underside of the base wafer wafer 240 to form a plurality of through electrodes 232, 233 electrically connected to a pair. One pair of external electrodes 23 8 , 239 . By this work, the piezoelectric vibrating piece 204 sealed in the cavity C can be actuated by the external electrodes 23 8 and 23 9 . In particular, when this process is performed, similarly to the formation of the winding electrodes 236 and 237, the through electrodes 232 and 23 are almost in the same state on the lower surface of the base substrate wafer 240, and thus the patterned external electrodes are formed. 238 and 239 are not connected to each other, and are connected in a state in which the through electrodes 232 and 233 are in close contact with each other. Thereby, the conductivity between the external electrodes 238 and 239 and the through electrodes 23 and 233 can be made reliable. Next, a fine adjustment process (S280) is performed which is tied to the state of the wafer body 260, and the frequency of each piezoelectric vibrator 201 sealed in the cavity C is finely adjusted to be within a predetermined range. Specifically, a voltage is applied to the external electrodes 238 and 239 formed on one of the lower surfaces of the base wafer wafer 240 to vibrate the piezoelectric vibrating reed 204. Then, while measuring the frequency, the laser beam is irradiated from the outside through the cover substrate wafer 25, and the fine adjustment film 221b of the superposed metal film 221 is evaporated. Thereby, the weights of the front end sides of the pair of vibrating arms 210, -69-201010272 211 are changed', so that the frequency of the piezoelectric vibrating piece 204 can be finely adjusted to be within a predetermined range of the nominal frequency. After the fine adjustment of the frequency is completed, the cutting process (S29〇) is performed, and the bonded wafer body 260 is cut along the cutting line shown in Fig. 63. As a result, a plurality of two-layered surface mount type piezoelectric vibrators 201 shown in Fig. 45 can be manufactured at one time in a cavity formed between the base substrate 202 and the lid substrate 203 which are bonded to each other. The piezoelectric vibrating piece 204 is sealed inside C. In addition, even if the cutting process (S290) is performed and the piezoelectric vibrators 201 are small, the engineering sequence of the fine adjustment process (S280) may be performed. However, as described above, fine adjustment can be performed in the state of the wafer body 260 by performing the fine adjustment process (S280), so that the plurality of piezoelectric vibrators 201 can be finely adjusted more efficiently. Therefore, the total production capacity can be improved. Then, an internal electrical characteristic check is performed (S295). In other words, the resonance frequency, the resonance resistance 値, the drive level characteristics (resonance frequency and the excitation power dependence of the resonance resistance )) of the piezoelectric vibrating piece 204 are measured, and the 〇 is checked. Also, check the insulation resistance characteristics and so on. Then, the appearance of the piezoelectric ‘vibrator 201 is finally checked, and the size or quality is finally checked. Thereby, the manufacture of the piezoelectric vibrator 201 is completed. In particular, the piezoelectric vibrator 201 of the present embodiment has no recess on the surface, and the through electrodes 232 and 233 can be formed in a state in which the base substrate 202 is almost flush with each other. Therefore, the through electrodes 232 and 233 can be wound around the electrodes 236 and 237. The external electrodes 238 and 239 are surely adhered to each other. As a result, the stability of the piezoelectric vibrating reed 204 and the external electrodes 238 and 239 can be ensured, and the reliability of the performance of the -70 to 201010272 liter can be improved, and the performance can be improved. Further, since the airtightness in the cavity C can be surely maintained, it is also possible to achieve high quality. Further, since the through electrodes 232 and '23 3 can be formed by a simple method using the paste P, the engineering can be simplified. In addition, according to the manufacturing method of the present embodiment, a plurality of the piezoelectric vibrators 201 can be manufactured at one time, so that the cost can be reduced. Next, an embodiment of the oscillator φ according to the present invention will be described with reference to Fig. 64. In the present embodiment, an oscillator including the piezoelectric vibrator 1 of the first embodiment will be described as an example. As shown in Fig. 64, the oscillator 500 of the present embodiment has a piezoelectric vibrator 1 as a resonator electrically connected to the integrated circuit 501. This oscillator 500 is provided with a substrate 503 on which an electronic component 502 such as a capacitor is mounted. The integrated circuit 501 for the oscillator is mounted on the substrate 503, and the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 501. The electronic component 502, the integrated circuit 501, and the piezoelectric vibrator 1 are electrically connected by a wiring pattern which is not shown. Further, each component is molded by a resin (not shown). In the oscillator 500 configured as described above, when a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 in the piezoelectric vibrator 1 vibrates. This vibration is converted into an electric signal based on the piezoelectric characteristics of the piezoelectric vibrating reed 4, and is input to the integrated circuit 501 as an electric signal. The input electrical signal is processed by the integrated circuit 501 as a frequency signal output. Thereby, the piezoelectric vibrator 1 has a function as a resonator. Further, the configuration of the integrated circuit 501 is selectively set to -71 - 201010272 as required, for example, an RTC (real time clock module, etc.), which can be added in addition to a single-function oscillator for clocks or the like. Control the action day or time of the machine or external machine, or provide functions such as time or calendar. As described above, according to the oscillator 500 of the present embodiment, the reliability of the airtightness in the cavity C is improved and the reliability is improved. Since the piezoelectric vibrator 1 is used, the oscillator 500 itself can also improve the reliability of the operation and achieve high quality. In addition to this, it is possible to obtain stable and high-precision frequency signals for a long time. In addition, the piezoelectric vibrator 1 of the first embodiment is described as an example. However, the same operational effects can be obtained by using the piezoelectric vibrator of the other embodiment. Next, an embodiment of an electronic apparatus of the present invention will be described with reference to FIG. The electronic device is described as an example of a portable information device 510 having the piezoelectric vibrator 1 shown in the first embodiment. First, the portable information device 510 of the present embodiment is developed and improved by a conventional wristwatch, for example, by a mobile phone. Outside © Viewing a similar watch, the LCD monitor is placed in the part equivalent to the dial, and * can display the current time on the screen. In addition, when it is used as a communication device, it is removed by the wrist, and the same communication as the conventional mobile phone can be performed by the speaker and the microphone built in the inner portion of the band. However, it is extremely miniaturized and lightweight compared to conventional mobile phones. Next, the configuration of the portable information device 510 of the present embodiment will be described. As shown in FIG. 65, the portable information device 510 includes a piezoelectric vibration-72-201010272, and a power supply unit for supplying electric power to the vibrating intervening unit. 511. The power supply unit 511 is constituted by, for example, a lithium secondary battery. The power supply unit 511 is connected in parallel with a control unit 51 that performs various types of control, a time count 513 for counting the time, etc., a communication unit 514 that externally communicates, a display for displaying various information, and a detection of each of the information. The voltage detecting unit 5 16 of the voltage of the functional portion. Power can then be supplied to each functional unit by the power supply unit 511. The control unit 521 is a dynamic control of the entire system by controlling the respective functional units to perform sound data transmission and reception, measurement or display at the current time, and the like. Further, the control unit 521 includes a CPU that is executed by reading a program written in the ROM in advance in the ROM of the program, and a RAM used as a work area of the CPU. The timer unit 513 is an integrated circuit including a built-in oscillation circuit, a register circuit, a digital circuit, and a interface circuit, and a piezoelectric vibrator 1 . When a voltage is applied to the piezoelectric vibrator 1, the piezoelectric vibrating reed 4 vibrates, and the action is converted into an electric signal by the piezoelectric characteristics of the crystal, and is input to the oscillation circuit as a xenon signal. The output of the oscillating circuit is divised by ', and is counted by the register circuit and the counter circuit. Then, via the surface circuit, the control unit 512 performs signal transmission and reception, and displays 515 the current time or current date or calendar information. The communication unit 514 has the same functions as those of the conventional mobile phone, and includes a wireless unit 517, a sound processing unit 518, a switching unit 519, an amplification 520, a sound input/output unit 521, a telephone number input unit 522, and an incoming sound generation unit 523. The call controls the memory unit 524. The radio unit 517 is a process of transmitting and receiving various data such as voice data to the base station via the antennas 525-73 to 201010272. The sound processing unit 518 encodes and digitizes the audio signal input by the wireless unit 517 or the amplifying unit 520. The amplifying unit 520 amplifies the signal input by the sound processing unit 518 or the sound output unit 521 to a predetermined level. The sound input/output section '521' is composed of a speaker or a microphone, etc., and the sound is transmitted or the sound is amplified or the sound is collected. Further, the incoming sound generating unit 523 generates an incoming sound in accordance with the call from the base station. When the switching unit 519 is limited to the incoming call, the amplifying unit 520 connected to the audio processing@section 518 is switched to the incoming sound generating unit 523, whereby the incoming sound generated by the incoming sound generating unit 5 is transmitted via the incoming sound. The amplification unit 520 is output to the sound input/output unit 521. Further, the call control memory unit 524 is a program for storing the departure of the communication and the arrival call control. Further, the telephone number input unit 522 is provided with a number button and other buttons, for example, from 〇 to 9, and the telephone number of the other party is input by pressing the number button or the like. When the voltage applied to each functional unit such as the control unit 5 1 2 by the power supply unit 51 1 is lower than a predetermined threshold, the voltage detecting unit 5 16 detects the voltage drop and notifies the control unit 512. The predetermined voltage 此时 at this time is set to be, for example, about 3 V, which is set in advance as the minimum voltage necessary for the communication unit 514 to operate stably. The control unit 512 that has received the notification of the voltage drop from the voltage detecting unit 516 disables the operations of the radio unit 517, the audio processing unit 518, the switching unit 519, and the incoming sound generating unit 523. In particular, it is necessary to stop the operation of the wireless unit 51 that consumes a large amount of power. Further, the display unit 5丨5 displays the content that the communication unit 514 cannot use due to insufficient battery capacity. -74- 201010272, that is, the operation of the voltage detecting unit 516 and the control unit 5 514, and displaying the content on the display unit can be a text message, but in a more intuitive display, the part is The phone image / (fork) symbol displayed on the upper part of the display surface of 515. Further, the power supply blocking unit 526 in which the power supply of the communication unit 514 is partially blocked can further improve the function of J φ 5 14 . As described above, according to the portable type of the present embodiment, since the high-quality piezoelectric vibrator 1 in which the airtightness in the cavity C is reliably and actuated is provided, the portable information sample can improve the reliability of the operation and seek High quality. The display shows stable and high-precision clock information. In addition to this, stable and high-precision clock information. In addition, although the example of the piezoelectric β according to the first embodiment will be described, the same operational effects can be achieved by using the * of the other embodiment. Next, an embodiment of the present invention will be described with reference to Fig. 66. In the present embodiment, a radio wave clock including the first embodiment of the mover 1 will be described as an example. As shown in Fig. 66, the piezoelectric vibrator of the present embodiment is electrically connected to the piezoelectric vibrator 1 of the filter unit 531, and includes a standard radio wave of clock information to automatically correct the clock to a correct function. 12, can pass 515. This display can also be marked in the display (icon). X is optional and the communication unit is stopped. The reliability of the machine will increase the machine itself. In addition, it can be long. When the vibrator 1 is displayed for a long time, it is a piezoelectric vibrator. In addition, it is displayed in the Fukushima (40 kHz) and Saga (60 kHz) in Japan. It is used to transmit standard radio waves in the Fukushima (40 kHz) and Saga (60 kHz) in Japan. The sending office (the sending office) transmits standard radio waves separately. A long wave such as 40 kHz or 60 kHz is a property that has a property of propagating on the earth's surface and a side that reflects on the ionosphere and the surface. The stomach spreads widely, and the above two stations are all below the net in Japan. The configuration of the function of the radio wave clock 53 0 will be described in detail. The antenna 5 32 is a standard wave that receives a long wave of 40 kHz or 60 kHz. The standard wave of the reference wave is the time information to be called the time code, and the AM modulator is applied to the carrier of 40 kHz or 60 kHz. The standard wave of the received long wave is amplified by an amplifier 533, and filtered and co-modulated by a filter unit 531 having a plurality of piezoelectric vibrators 1. The piezoelectric vibrator 1 of the present embodiment includes crystal vibrating sub-portions 538 and 539 ° each having a resonance frequency of 40 kHz and 60 kHz which are the same as the carrier frequency, and the filtered predetermined frequency signal is detected and rectified. ® Road 534 is used for detection and demodulation. Next, the time code is taken out via the waveform shaping circuit 535, and counted by the CPU 53. In the CPU 53, the information such as the current year, estimated date, week, and time is read. The information read is reflected in the RTC5 3 7 and the correct time information is displayed. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrating sub-portions 5 3 8 and 539 are suitable for the vibrator having the tuning-fork type structure described above. In addition, the above description is shown in Japan as an example, but the frequency of standard wave of long wave is not the same overseas. For example, in Germany it is -77- 201010272 with 77. 5 ΚΗζ standard radio waves. Therefore, when the radio wave clock 530 that can be used overseas is incorporated in a portable device, the piezoelectric vibrator 1 having a frequency different from that in Japan is required. By using the radio-controlled timepiece 530 of the present embodiment, the high-quality piezoelectric vibrator 1 having improved airtightness in the cavity-C and improved reliability of the operation can improve the radio-frequency clock itself. The reliability of the operation is to achieve high quality. In addition to this, the φ moment can be counted stably and accurately for a long period of time. In addition, the piezoelectric vibrator 1 of the first embodiment will be described as an example. However, the same operational effects can be obtained by using the piezoelectric vibrator of the other embodiment. In addition, the technical scope of the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the spirit and scope of the invention. For example, in each of the above-described embodiments, the piezoelectric vibrating piece in which the groove is formed on both surfaces of the vibrating arm portion is described as an example, and the piezoelectric vibrating piece is formed in a non-grooved portion. It doesn't matter. However, by forming the trench portion, when a predetermined voltage is applied to the pair of excitation electrodes, the electric field efficiency between the pair of excitation electrodes can be improved, so that the vibration loss can be further suppressed and the vibration characteristics can be further improved. In other words, the CI 値 (Crystal Impedance) can be further reduced, and the piezoelectric vibrating reed can be further improved. Based on this, it is preferable to form the groove portion. Further, each of the above embodiments is described by taking a tuning-fork type piezoelectric vibrating piece as an example, but is not limited to a tuning fork type. For example, even if it is thick and slippery, it does not matter. Further, in each of the above embodiments, the base substrate and the lid substrate are anodically bonded via a bonding film, but the bonding is not limited to anodic bonding. However, it is preferable to bond the two substrates firmly by anodic bonding. Further, in each of the above embodiments, the piezoelectric vibrating reed is bump-bonded, but is not limited to bump bonding. For example, it is possible to bond the piezoelectric vibrating piece by a conductive adhesive. However, by the bump bonding, the piezoelectric vibrating piece can be floated from the upper surface of the base substrate, so that the minimum vibration gap necessary for the vibration can be naturally maintained. Therefore, bump bonding is preferred. Further, in each of the above embodiments, the through electrodes are formed as a pair, but it is also possible to provide one or three or more. Further, in the charging operation in the above embodiments, it is possible to embed the paste after defoaming (e.g., telecentric defoaming or vacuuming). Under the defoaming treatment of the cream beforehand, it is possible to fill the paste which does not contain bubbles or the like. Therefore, even if the sintering process is performed, the volume reduction of the paste can be suppressed as much as possible. Therefore, the amount of honing performed later can be reduced, the time taken for honing can be reduced, and the piezoelectric vibrator can be efficiently manufactured. In each of the above-described embodiments, as shown in Fig. 67, it is also possible to use a paste P in which a glass frit (granular body) G having the same thermal expansion coefficient as that of the base substrate (base wafer) is used. As a result, during sintering, the thermal expansion of the paste p can be made close to the thermal expansion of the wafer for the base substrate. Therefore, it is difficult to generate a gap or the like due to a difference in thermal expansion between the two, and the two can be brought into a more intimate state. As a result, a through electrode having improved airtightness can be formed, and the long-term airtight reliability can be improved. Further, the ratio of mixing the glass frit G is preferably as much as possible in the range of -78 to 201010272 which does not inhibit the conductivity of the metal fine particles P1. Further, in each of the above embodiments, a paste containing elongated fibrous metal particles is used as an example, but the shape of the metal fine particles may be other shapes. For example, the sphere is fine. Also in this case, when the metal fine particles are in contact with each other, since the point contact is made, electrical continuity can be ensured in the same manner. However, as in the case of elongated fibers, by using metal microparticles having a non-spherical shape, when they are in contact with each other, they are not in point contact, but are easily formed into a line contact. Therefore, the electrical conductivity of the through electrode can be further improved, so that a paste containing non-spherical metal fine particles is more preferable than a spherical shape. Further, when the metal fine particles P1 are non-spherical, for example, they may have a rectangular shape as shown in Fig. 68A or a wave shape as shown in Fig. 68B, or a cross-sectional star shape as shown in Fig. 68C, or a cross-shaped cross type as shown in Fig. 68D. . Further, in each of the above-described embodiments, the through electrodes are provided so as to be gradually reduced in diameter toward the external electrodes. Conversely, as shown in FIG. 69, the through electrodes 32 may be provided to gradually expand the diameter toward the external electrodes 38 and 39. , 33 Φ. In this case, the effect of the peer can be achieved. * In the first and second embodiments, the lower surface of the base substrate wafer is honed until the bottom of the holding hole is reached in the honing process. However, the present invention is not limited thereto, and is used for honing to the base substrate. The upper side of the wafer is also fine. Further, in the above-described first and second embodiments, the holding hole is formed into a bottomed shape such as a bottom surface of the base substrate wafer when the holding hole is formed. However, the shape may be other shapes. For example, it may be a through hole shape formed in the thickness direction of the crystal substrate of the base substrate. However, in this case, in the lower-79-201010272 surface honing project, the amount of honing must be changed according to the volume of the paste which is reduced during sintering. In the filling process, the burying operation of the paste becomes complicated, so The ideal retention hole is bottomed. Further, in the third embodiment, the lower surface of the base substrate wafer is honed to the bottom of the hole portion in the honing process. However, the present invention is not limited thereto, and the honing amount is equal to or greater than T3. No problem. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing the appearance of a piezoelectric vibrator according to a first embodiment of the present invention. Fig. 2 is a view showing the internal configuration of the piezoelectric vibrator shown in Fig. 1, and the piezoelectric vibrating reed is viewed from above with the cover substrate removed. 3 is a cross-sectional view of the piezoelectric vibrator taken along the line A-A shown in FIG. 2. FIG. 4 is an exploded perspective view of the piezoelectric vibrator shown in FIG. 1. Fig. 5 is a top β-sectional view of the piezoelectric vibrating reed constituting the piezoelectric vibrator shown in Fig. 1. Fig. 6 is a bottom view of the piezoelectric vibrating reed shown in Fig. 5; Fig. 7 is a cross-sectional arrow Β-Β diagram shown in Fig. 5. Fig. 8 is an enlarged view of the through electrode shown in Fig. 3, showing a paste containing a plurality of metal fine particles. Fig. 9 is a flow chart showing the flow when the piezoelectric vibrator shown in Fig. 1 is manufactured. FIG. 10 is a view showing a state in which a piezoelectric vibration-80-201010272 is manufactured along the flowchart shown in FIG. 9 and a plurality of concave portions are formed on the wafer for a cover substrate on the basis of the cover substrate. Figure. Fig. 11 is a view showing a state in which piezoelectric vibrations are manufactured along the flow chart shown in Fig. 9, and a state in which a plurality of holding holes are formed in a base substrate for a base substrate. Fig. 12 is a view showing the state of Fig. 11 taken along the line of the base substrate wafer. Φ Fig. 13 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 9, and a state in which the paste is filled in the holding hole after the state shown in Fig. 12 is displayed. Fig. 14 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 9, and a state in which the paste is temporarily sintered after the state shown in Fig. 13 is shown. Fig. 15 is a view showing a state in which the piezoelectric vibrator is manufactured along the flow chart shown in Fig. 9, and shows a state in which the paste is filled in the holding hole after the state shown in Fig. 14. Fig. 16 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 9, and a state in which the paste is officially sintered after the state shown in Fig. 15 is not shown. Fig. 17 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 9, and shows a state in which both sides of the wafer for base substrate are honed after the state shown in Fig. 16 is shown. Fig. 18 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 9, and after the state shown in Fig. 17, the surface of the substrate wafer is not recessed on the substrate-81 · 201010272 Consistent through electrodes. Fig. 19 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 9, and after the state shown in Fig. 18, the bonding film and the winding electrode pattern are formed on the upper surface of the base substrate wafer. State diagram. Fig. 20 is a general view of a wafer for a base substrate in the state shown in Fig. 19; 21 is a view showing a state in which a piezoelectric vibrator is manufactured along the flowchart shown in FIG. 9, and the base substrate wafer and the lid substrate are in a state in which the piezoelectric vibrating reed is housed in the cavity. An exploded perspective view of a wafer body @ bonded by a wafer. FIG. 22 is a flowchart showing the flow of the piezoelectric vibrator shown in FIG. 1 in the second embodiment of the present invention. Fig. 23 is a view showing a state in which piezoelectric vibrators are manufactured along the flow chart shown in Fig. 22, and a state in which both sides of the wafer for base substrate are honed after the state shown in Fig. 14 is shown. Fig. 24 is a view showing a state in which the piezoelectric vibrator is manufactured along the flowchart shown in Fig. 22, and shows a state after the state shown in Fig. 23. Fig. 25 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 22, and a state in which the state is shown in Fig. 24, and a state of the paste is officially sintered. Fig. 26 is a perspective view showing the appearance of a third embodiment of the piezoelectric vibrator of the present invention. Fig. 27 is a view showing the internal configuration of the piezoelectric vibrator shown in Fig. 26, and the piezoelectric vibrating reed is viewed from above with the cover substrate removed. Figure 28 is a cross-sectional view -82 - 201010272 of the piezoelectric vibrator taken along the Α-Α line shown in Figure 27 . Fig. 29 is an exploded perspective view of the piezoelectric vibrator shown in Fig. 26; Fig. 30 is a view showing a piezoelectric vibrating piece constituting the piezoelectric vibrator shown in Fig. 26. . Surface map. Fig. 31 is a bottom view of the piezoelectric vibrating reed shown in Fig. 30. Figure 32 is a cross-sectional view taken along line B-B of Figure 30. Fig. 33 is an enlarged view of the through electrode shown in Fig. 28, showing a paste containing a plurality of ruthenium metal fine particles. Fig. 34 is a flow chart showing the flow when the piezoelectric vibrator shown in Fig. 26 is manufactured. Fig. 35 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 34, and a state in which a plurality of concave portions are formed in a wafer for a cover substrate which is a base of a cover substrate. Fig. 36 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 34, and a state in which a plurality of hole portions are formed by a 0 wafer on a base substrate which is a base substrate. . Fig. 37 is a view showing the state of Fig. 36 taken along the line of the base substrate wafer. Fig. 38 is a view showing a state in which the piezoelectric vibrator is manufactured along the flow chart shown in Fig. 34, and shows a state in which the paste is filled in the cavity after the state shown in Fig. 37. Fig. 39 is a view showing a state in which the piezoelectric vibrator is manufactured along the flow chart shown in Fig. 34, and shows a state in which the paste is cured by sintering after the state shown in Fig. 38. -83-201010272 FIG. 40 is a view showing a state in which the piezoelectric vibrator is manufactured along the flowchart shown in FIG. 34, and shows a state diagram of both sides of the wafer for honing the base substrate after the state shown in FIG. . 41 is a view showing a state in which the piezoelectric vibrator is manufactured along the flow chart shown in FIG. 34, and after the state shown in FIG. 40 is displayed, the surface of the substrate/substrate wafer is formed without a recess. electrode. Fig. 42 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 34, and after the state shown in Fig. 41 is shown, the bonding film and the winding electrode are formed on the surface of the base substrate wafer. Patterned state diagram. Fig. 43 is a general view of a wafer for a base substrate in the state shown in Fig. 42. 44 is a view showing a state in which a piezoelectric vibrator is manufactured along the flowchart shown in FIG. 34, and the base substrate wafer and the lid substrate are used in a state in which the piezoelectric vibrating reed is housed in the cavity. An exploded perspective view of a wafer to which the wafer is anodically bonded. Fig. 45 is a perspective view showing the appearance of a fourth embodiment of the piezoelectric vibrator of the present invention. [Fig. 46] Fig. 46 is a view showing the internal configuration of the piezoelectric vibrator shown in Fig. 45, and the piezoelectric vibrator is viewed from above in a state where the lower cover substrate is removed. Figure 47 is a cross-sectional view of the piezoelectric vibrator taken along the line A-A shown in Figure 46. Fig. 48 is an exploded perspective view of the piezoelectric vibrator shown in Fig. 45; Fig. 49 is a top view of the piezoelectric vibrating reed constituting the piezoelectric vibrator shown in Fig. 45. Fig. 50 is a bottom view of the piezoelectric vibrating reed shown in Fig. 49; -84- 201010272 Fig. 51 is a cross-sectional arrow B-B diagram shown in Fig. 49. Fig. 52 is an enlarged view of the through electrode shown in Fig. 47, showing enthalpy of a plurality of metal fine particles. Fig. 53 is a flow chart showing the flow of the piezoelectric vibrator shown in Fig. 45. Fig. 54 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 53, and a state in which a plurality of concave portions are formed by a 0 wafer on a base substrate of a cover substrate. Fig. 55 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 53 and a state in which a pair of through holes are formed in a base substrate wafer which is a base substrate. Fig. 56 is a view showing the state of Fig. 55 as a cross section of the wafer for a base substrate. Fig. 57 is a view showing a state in which the piezoelectric vibrator is manufactured along the flow chart shown in Fig. 53, and shows a state in which the paste is filled in the through hole after the state shown in Fig. 56. Fig. 58 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 53 and showing a state in which the paste is cured by sintering after the state shown in Fig. 57, and a through electrode is formed. Fig. 59 is a view showing a state in which the piezoelectric vibrator is manufactured along the flow chart shown in Fig. 53, and shows a state of the both sides of the wafer for honing the base substrate after the state shown in Fig. 58. Fig. 60 is A drawing when the piezoelectric vibrator is manufactured along the flow chart shown in FIG. 53 is displayed, and after the state shown in FIG. 59, the through-electrode having the surface formed by the surface of the substrate wafer is not recessed on the substrate-85-201010272. . Fig. 61 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in Fig. 53, and after the state shown in Fig. 60 is shown, the bonding film and the winding electrode pattern are formed on the upper surface of the base substrate wafer. State diagram. 62 is a general view of a wafer for a base substrate in the state shown in FIG. 61. 63 is a view showing a state in which a piezoelectric vibrator is manufactured along the flowchart shown in FIG. 53, and the base substrate wafer and the lid substrate are in a state in which the piezoelectric vibrating reed is housed in the cavity. An exploded perspective view of a wafer body that is anodically bonded to a wafer. Fig. 64 is a block diagram showing an embodiment of an oscillator according to the present invention. Fig. 65 is a view showing a configuration of an embodiment of an electronic apparatus according to the present invention. Fig. 66 is a block diagram showing an embodiment of a radio wave clock according to the present invention. . Fig. 67 is an enlarged view showing a modified example of the paste of the present invention. « Fig. 68 A is a view showing a modification of the metal fine particles of the present invention' showing the formation of rectangular metal fine particles. Fig. 68B is a view showing a modification of the metal fine particles of the present invention, showing the formation of a wave-shaped metal fine particle. Fig. 68C is a view showing a modification of the metal fine particles of the present invention. Fig. 68D is a view showing a modification of the metal fine particles of the present invention, showing the formation of a cross-shaped metal fine particle. -86- 201010272 Fig. 69 is a cross-sectional view showing a modification of the piezoelectric vibrator of the present invention. Fig. 70 is a view showing the internal configuration of a conventional piezoelectric vibrator. A diagram of a piezoelectric vibrating piece. Fig. 71 is a cross-sectional view showing the piezoelectric vibrator shown in Fig. 70. [Main component symbol description] Reference B: Bump C: Cavity G: Glass frit (granular) P: Paste P 1 : Metal microparticles 1, 101, 201: Piezoelectric vibrator 2, 102, 202: Base substrate. 3, 103, 203: cover substrate® 3a, l〇3a, 203a: recessed portion 4, 104, 204 for cavity: piezoelectric vibrating piece 30a, 31a: holding hole 35, 135, 235: bonding film 36 , 37, 136, 137, 236, 237: winding electrodes 38, 39, 138, 139, 238, 239: external electrodes 40, 140, 240: base substrate wafers 50, 150, 250: crystal for the cover substrate Circle 130a, 13 la : Hole-87-201010272 23 0, 231: Through hole (through hole) 500: Oscillator 501: Integrated circuit of oscillator 510: Portable information machine (electronic machine) ^ 513: Electronic machine Timing section ' 53 0 : Radio clock 531 : Filter section of radio wave clock φ

-88--88-

Claims

201010272 VII. Patent Application No. 1 A method for manufacturing a piezoelectric vibrator is to use a wafer for a base substrate and a wafer for a cover substrate to fabricate a plurality of substrates/base substrates and a cover substrate at a time. A method of sealing a piezoelectric vibrator of a piezoelectric vibrating piece in the formed cavity, characterized in that: _ a recess forming process is performed on the wafer for the cover substrate to form a plurality of stacked wafers a cavity recess for forming the cavity; Φ a through electrode forming process for the base substrate wafer, a plurality of through-wafer via electrodes formed by a paste containing a plurality of metal fine particles; and a winding electrode formed And a plurality of winding electrodes electrically connected to the through electrodes are formed on the upper surface of the base substrate wafer; and the plurality of piezoelectric vibrating pieces are bonded to each other via the winding electrode The upper surface of the wafer for a base substrate; and the superimposing process of laminating the wafer for the base substrate and the wafer for the lid substrate, And the piezoelectric vibrating piece is housed in the cavity surrounded by the two wafers; and the bonding process is performed by bonding the wafer for the base substrate and the wafer for the cover substrate, and sealing the piezoelectric vibrating piece to the space In the cavity; an external electrode forming process for forming a plurality of external electrodes electrically connected to the through electrodes on the lower surface of the base substrate wafer; and a cutting process for cutting the bonded two crystals The above-described through electrode forming engineering system includes: -89-201010272 holding hole forming process for forming a plurality of wafers for the base substrate to hold the paste, and forming a plurality of the piezoelectric vibrators. a retaining hole in which the paste is embedded in the plurality of retaining holes to block the retaining hole; - a sintering process in which the paste is temporarily sintered and then sintered to be hardened; and the honing process After being temporarily sintered or formally sintered, the base substrate is honed by a predetermined thickness on both sides of the wafer, and the 硏 is performed after the main sintering. When the project, based upon the above sintered engineering, equivalent to the new tentative firing the paste to reduce the amount of paste in the paste was supplemented temporary sintering, and the whole again temporarily phthalocyanine positive sintering after sintering. 2. The method of producing a piezoelectric vibrator according to claim 1, wherein the paste is defoamed and embedded in the holding hole. 3. The method of manufacturing a piezoelectric vibrator according to the first aspect of the invention, wherein, in the holding hole forming process, the holding hole is formed in a bottom hole shape from an upper surface side of the base substrate wafer ' The honing engineering system includes: a honing process for honing a predetermined thickness of the upper surface of the base substrate wafer; and a honing process for honing the underside of the base substrate wafer to The paste in which the holding hole penetrates and hardens is exposed at least. 4. A method of manufacturing a piezoelectric vibrator by using a wafer for a base substrate of -90-201010272 and a wafer for a cover substrate to fabricate a plurality of spaces formed between the base substrate and the lid substrate which are bonded to each other at a time. A method of sealing a piezoelectric vibrator of a piezoelectric vibrating piece in a cavity, characterized in that: * a recess forming process is performed on the wafer for the cover substrate, and a plurality of the plurality of wafers are formed to form the above a recessed portion for a cavity of a cavity; a through electrode forming process for forming a wafer for a base substrate, forming a plurality of through-Φ electrodes through a paste containing a plurality of metal fine particles; and forming a winding electrode; a plurality of winding electrodes electrically connected to the through electrodes are formed on the upper surface of the base substrate wafer; and the plurality of piezoelectric vibrating pieces are bonded to the base substrate via the winding electrodes a superimposed wafer, wherein the wafer for the base substrate and the wafer for the cover substrate are superposed on each other by the recess and the two wafers The piezoelectric vibrating reed is housed in the cavity; the β-bonding process is to bond the base substrate wafer and the cover substrate wafer, and the piezoelectric vibrating reed is sealed in the cavity; And a plurality of external electrodes electrically connected to the through electrodes are formed on a lower surface of the base substrate wafer; and a cutting process is performed to cut the two wafers to be bonded, and the small pieces are formed into a plurality of In the piezoelectric vibrator, the through electrode forming process includes: a hole forming process for forming a plurality of hole portions on the upper surface of the base substrate wafer; -91 - 201010272 The above-mentioned paste is embedded in the plurality of holes to block the holding hole; the sintering process is to sinter the embedded paste at a predetermined temperature to harden it; 'The honing process is to sinter the base substrate after sintering The upper surface of the circle is only honed to a predetermined thickness; and the honing process is performed after the sintering, and the base substrate is honed to the underside of the wafer to harden the paste. At least until exposed. The method of manufacturing a piezoelectric vibrator according to the fourth aspect of the invention, wherein the paste is defoamed and then embedded in the hole portion. 6. A method of manufacturing a piezoelectric vibrator by using a wafer for a base substrate and a wafer for a lid substrate to simultaneously seal a plurality of cavities formed between a base substrate and a lid substrate that are bonded to each other. A method of piezoelectric vibrator of a piezoelectric vibrating piece, comprising: a recess forming process for forming a wafer for the cover substrate, forming a plurality of vacancies forming the cavity when the two wafers are stacked a cavity for forming a through-electrode, wherein the substrate for the base substrate is formed by using a paste containing a plurality of metal fine particles to form a plurality of through electrodes penetrating the wafer; and the winding electrode is formed on the base substrate a plurality of winding electrodes electrically connected to the through electrodes are formed on the upper surface of the wafer, and the plurality of piezoelectric vibrating pieces are bonded to the upper surface of the base substrate wafer via the winding electrodes. -92- 201010272 a superimposed project in which the wafer for a base substrate and the wafer for a cover substrate are stacked, and the void surrounded by the recess and the two wafers The piezoelectric vibrating piece is housed in the cavity: a bonding process for bonding the base substrate wafer and the lid/substrate wafer, and sealing the piezoelectric vibrating piece in the cavity: an external electrode forming process a plurality of external electrodes electrically connected to the through electrodes are formed on a lower surface of the base substrate wafer; and a Φ cutting process for cutting the two wafers to be bonded, and the small pieces are formed into a plurality of In the above-described through-electrode forming system, the through-hole forming process is characterized in that a through-hole forming process is performed to form a plurality of through-holes penetrating the wafer into the base substrate wafer; a plurality of through holes are embedded in the paste to block the through holes; the sintering process is performed by sintering at a predetermined temperature to cause the hardening; and the honing process is performed by sintering the base substrate The two sides of the circle only honed the predetermined thickness. 7. The method of manufacturing a piezoelectric vibrator according to the sixth aspect of the invention, wherein the paste is defoamed and embedded in the through hole. 8. The method for producing a piezoelectric vibrator according to any one of the first to seventh aspects of the present invention, wherein, in the above-mentioned mounting process, a bonding film forming process is provided, which is a method of laminating the base substrate. When the wafer is bonded to the lid-93-201010272 substrate, the bonding film surrounding the recess is formed on the upper surface of the base wafer, and the bonding is performed to bond the two wafers via the bonding film. . The method of manufacturing a piezoelectric vibrator according to any one of the first to seventh aspects of the present invention, wherein the piezoelectric vibrating piece is bump-bonded by a conductive bump during the mounting process. . The method for producing a piezoelectric vibrator according to any one of claims 1 to 7, wherein a paste containing metal particles having a non-spherical shape is embedded in the filling process. In the method of manufacturing a piezoelectric vibrator according to any one of the first to seventh aspects of the present invention, in the charging process, the thermal expansion ratio is substantially the same as that of the base substrate wafer. The granule cream. 12. A piezoelectric vibrator characterized by comprising: a base substrate honed on both sides; and a cover substrate having a recess for forming a cavity, wherein the recess is opposed to the base substrate In the state of being bonded to the base substrate, the piezoelectric vibrating piece is bonded to the upper surface of the base substrate in a state in which the concave portion is housed in a cavity formed between the base substrate and the lid substrate. The external electrode is formed on the lower surface of the base substrate; the through electrode is formed to penetrate the base substrate, and is electrically connected to the external electrode while maintaining airtightness in the cavity; and -94 - 201010272, the winding electrode is formed on the upper surface of the base substrate, the through electrode is electrically connected to the piezoelectric vibrating piece to be joined, and the through electrode is made of a paste containing a plurality of metal fine particles. * Formed by hardening. The piezoelectric vibrator according to claim 12, wherein the base substrate and the lid substrate are anodically bonded via a bonding film formed between the substrates so as to surround the periphery of the concave portion. The piezoelectric vibrator according to claim 12, wherein the piezoelectric vibrating piece is bump-bonded by a conductive bump. 15. The piezoelectric vibrator of claim 2, wherein the metal microparticles have a non-spherical shape. 16. The piezoelectric vibrator of claim 12, wherein the paste is mixed with a granule 大致. 17· oscillator which has substantially the same thermal expansion rate as the base substrate, and is characterized in that: The piezoelectric vibrator described in any one of the above-mentioned items in the range of 12 to β is electrically connected to the integrated circuit as an oscillator. 18. An electronic device characterized in that: the piezoelectric vibrator according to any one of claims 12 to 16 is electrically connected to a timing unit, and is characterized in that: The piezoelectric vibrator system according to any one of the patents 12 to 16 is electrically connected to the filter unit. -95-