201017942 六、發明說明： 【發明所屬之技術領域】 本發明係關於在被形成在接合之兩片基板之間的空腔 內，密封壓電振動片之表面安裝型（SMD)之壓電振動件 ，和製造該壓電振動件之壓電振動件之製造方法，和具有 該壓電振動件之振盪器、電子機器及電波時鐘。 〇 【先行技術】 近年來，在行動電話或行動資訊終端機器，使用利用 水晶等之壓電振動件以當作時刻源或控制訊號之時序源、 基準訊號源。該種之壓電振動件雖然所知的有各式各樣， 但以其一例而言，所知的有表面安裝型之壓電振動件。該 種壓電振動件一般所知的有以在基座基板和蓋基板從上下 夾著之方式接合形成壓電振動件之壓電基板之3層構造型 (參照專利文獻1及2 )。 ❹ 在此，針對3層構造型之壓電振動件予以簡單說明。 如第35圖所示般，壓電振動件200係由形成有壓電振動 片201a之壓電基板201 ’和在從上下夾著該壓電基板201 之狀態下被接合於壓電基板201之基座基板2 02及蓋基板 203構成3層。 壓電基板201係由水晶等之壓電材料所形成，由框部 201b和被連結於該框部201b之上述壓電振動片201a所構 成。並且，該框部201b之部分接合兩基板2 02、203。 另外，壓電振動片201a係被收納在由形成在兩基板 -5- 201017942 2 02、203之凹部202a、203a所構成之空腔內。在該壓電 振動片20 1a圖案製作有於施加電壓時用以使壓電振動片 201a振動之電極204a、204b。 兩基板202、203爲玻璃等之透明絕緣體，經接合膜 2 05被接合於壓電基板201之框部201b (例如，陽極接合 )。再者，兩基板202、203係如上述般分別在內面形成 有用以構成空腔C之凹部202a、203a。 在兩基板202、203中之基座基板202之底面，涵蓋 _ 側面形成有外部電極206a、206b。其中，一方之外部電極 206a係被電性連接於壓電振動片201a之一方之電極204a ，另一方之外部電極206b係被電性連接於壓電振動片 201a之另一方之電極204b。 專利文獻1:日本特開2006-148758號公報 專利文獻2:日本特開2007-184810號公報 【發明內容】 © (發明所欲解決之課題） 但是，在以往之壓電振動件2 00還殘存著以下之課題 〇 首先，隨著近年來電子機器之小型化，即使關於被搭 載在該些各種電子機器之壓電振動件200也要求更小型化 。但是，因以往之壓電振動件200爲在基座基板202和蓋 基板203從上下夾著壓電基板201之3層構造類型，故不 管怎樣產生了厚度，難以謀求更多的薄型化。尤其，因必 -6- 201017942 須在基座基板202及蓋基板203之雙方分別形成用以構成 空腔C之凹部202a、203a，故必須將兩基板2 02、203之 厚度設爲一定値以上之厚度。對於該點，則難以謀求薄型 化。 本發明係考慮該些事情而所創作出，其目的爲提供可 以比以往更薄型化，謀求小型化之表面安裝型之壓電振動 件。 〇 再者，提供效率佳一次製造該壓電振動件之壓電振動 件之製造方法，和具有壓電振動件之振盪器、電子機器、 電波時鐘。 (用以解決課題之手段） 本發明爲了解決上述課題而達成所涉及之目的，提供 以下之手段。 (1)本發明所涉及之壓電振動件之製造方法，爲利 用基座基板用晶圓和蓋基板用晶圓，一次多數製造在被形 成在互相接合之基座基板和蓋基板之間的空腔內密封壓電 振動片之壓電振動件的方法，具備有：在上述蓋基板用晶 圓多數形成重疊晶圓之時形成上述空腔之空腔用之凹部的 凹部形成工程；多數形成貫通上述基座基板用晶圓之一對 貫通孔的貫通孔形成工程；以導電體掩埋多數形成之上述 一對貫通孔，而多數形成一對貫通電極之貫通電極形成工 程；在上述基座基板用晶圓之上面，以包圍上述凹部之周 圍之方式形成接合膜之接合膜形成工程·，在上述基座基板 201017942 用晶圓之上面，多數形成分別對上述一對貫通電極電性連 接之迂迴電極的迂迴電極形成工程；經上述迂迴電極將多 數上述壓電振動片接合於上述基座基板用晶圓之上面的支 架工程；重疊上述基座基板用晶圓和上述蓋基板用晶圓， 而在由上述凹部和兩晶圓所包圍之上述空腔內收納壓電振 動片之重疊工程；經上述接合膜接合上述基座基板用晶圓 和上述蓋基板用晶圓，在上述空腔內密封上述壓電振動片 之接合工程；在上述基座基板用晶圓之下面，多數形成分 _ 別被電性連接之一對外部電極之外部電極形成工程；和切 斷被接合之上述兩晶圓，切成小片使成爲多數上述壓電振 動件之切斷工程。 若藉由上述製造方法，首先在蓋基板用晶圓多數形成 空腔用之凹部的凹部形成工程。該些凹部係於之後重疊兩 晶圓之時，成爲空腔的凹部。再者，在與該工程同時或前 後之時序，執行多數形成貫通基座基板用晶圓之一對之貫 通孔的貫通孔形成工程。此時，之後於重疊兩晶圓之時， ❹ 以收放在形成在蓋基板用晶圓之凹部內之方式多數形成一 對貫通孔。接著，執行以導電體掩埋多數形成之多數一對 貫通孔’而多數形成一對貫通電極的貫通電極形成工程。 接著，在基座基板用晶圓之上面，圖案製作導電性材 料’而執行多數形成分別對上述一對貫通電極電性連接之 迂迴電極的迂迴電極形成工程。此時，之後於重疊兩晶圓 之時’以收放在形成在蓋基板用晶圓之凹部內之方式多數 形成迂迴電極。再者，在與該迂迴電極形成工程同時或前 -8- 201017942 後之時序’執行在基座基板用晶圓之上面以包圍凹部周圍 之方式形成接合膜的接合膜形成工程。 然後，執行經迂迴電極將多數上述壓電振動片接合於 基座基板用晶圓之上面的支架工程。依此’被接合之各壓 電振動片成爲經迂迴電極對一對貫通電極導通之狀態。 在支架結束之後，執行重叠基座基板用晶圚和蓋基板 用晶圓之重疊工程。依此，被接合之多數壓電振動片成爲 0 被收納在以凹部和兩晶圓所包圍之空腔內之狀態。 接著 '執fr經由接合膜接合重叠之兩晶圓的接合工程 。依此，可以將壓電振動片密封在空腔內。此時，被形成 在基座用晶圓之貫通孔由於貫通電極被阻塞，故空腔內之 氣密藉由貫通孔不會受損。然後，接合後，在基座基板用 晶圓之下面，圖案製作導電性材料，而執行多數形成分別 被電性連接於多數一對貫通電極之一對外部電極的外部電 極形成工程。藉由該工程，可以利用外部電極使被密封在 G 空腔內之壓電振動片動作。 最後，執行切換所接合之基座基板用晶圓及蓋基板用 晶圓，而切成小片使成爲多數壓電振動件之切斷工程。 其結果，可以一次多數製造在被形成於互相陽極接合 之基座基板和蓋基板之間之空腔內密封壓電振動片之表面 安裝型之壓電振動件。尤其，與以往之3層構造不同，因 係接合基座基板和蓋基板之2層構造，故僅以往之壓電基 板部分則可以使全體之厚度變薄。因此，比起以往可以使 厚度更薄，可以謀求小型化。 -9- 201017942 (2) 於支架工程之時，在上述迂迴電極上形成凸塊 之後，即使經凸塊將上述壓電振動片凸塊接合在上述基座 基板用晶圓之上面亦可。 此時，因壓電振動片被凸塊接合於基座基板之上面， 故基座基板在浮起之狀態下被支持。因此，可以自然確保 振動所需之最小限的振動間距。依此，與蓋基板不同，不 需要在基座基板側形成空腔用之凹部，即使爲平板狀之基 板亦可。因此，不考慮凹部之部分，則可以儘可能使基座 _ 基板之厚度變薄。即使該點亦可以謀求壓電振動件之薄型 化。 (3) 於支架工程之時，即使對上述迂迴電極至少施 予10秒以上之電漿洗淨處理之後，形成上述凸塊亦可。 此時，於形成凸塊之前，對迂迴電極照射電漿（例如 ，氧電漿）而施予電漿洗淨處理。依此，可以除去塵埃等 之污染源，形成凸塊之面成爲乾淨之面，並且表面也被改 質。尤其，因至少照射10秒電漿，故不會殘留污染源可 @ 以確實除去。依此，可以提高與凸塊之密接性、接合性， 並可以提高凸塊之剪斷剝離強度。 因此，可以提高壓電振動片之支架性能，其結果可以 謀求壓電振動件之高品質化。 (4) 即使於上述貫通孔形成工程後，執行在上述基 座基板用晶圓之上面予以表面加工，而將算術平均粗度 Ra設爲1 Onm以下的表面加工工程亦可。 此時，於形成凸塊之前，將基座基板用晶圓之上面之 -10- 201017942 算術平均粗度Ra設爲1 〇 nm以下。依此，可以使成爲形成 凸塊之基底的基座基板用晶圓之上面儘可能接近平滑之面 。因此，可以提高與凸塊之密接性、接合性’並可以提高 凸塊之剪斷剝離強度。因此，可以提高壓電振動片之支架 性能，並可以謀求壓電振動件之高品質化。 (5) 即使於上述接合工程之時，陽極接合上述基座 基板用晶圓和是上述蓋基板用晶圓亦可。 φ 此時，因陽極接合基座基板用晶圓和蓋基板用晶圓’ 故可以在更強固密接兩晶圓之狀態下接合兩晶圓。因此， 可以將壓電振動片更確實密封在空腔內，可以提高振動特 性。 (6) 上述凹部形成工程即使又具備以特定圖案在上 述蓋基板用晶圓之表面網版印刷塗料之印刷工程；使所印 刷之上述塗料乾燥之乾燥工程；和於多次反覆執行上述印 刷工程和上述乾燥工程直至藉由上述塗料之重複塗裝而形 〇 成上述凹部之後，燒結重複塗裝而乾燥的塗料的燒結工程 亦可。 此時，於在蓋基板用晶圓形成空腔用之凹部之時，不 用施予蝕刻等之切削加工，可以形成凹部。首先，執行以 特定圖案即是以包圍成爲凹部之部分的周圍之方式在蓋基 板用晶圓之表面網版印刷塗料之印刷工程。接著，執行使 所印刷之塗料乾燥之乾燥工程。然後，再次執行印刷工程 ，在乾燥之塗料上網版印刷新的塗料而重複塗裝。如此一 來，多次重複執行印刷工程和乾燥工程，直至藉由塗料之 -11 - 201017942 重複塗裝而形成凹部爲止。然後，於藉由塗料之重複塗裝 而形成凹部之後，執行燒結重複塗裝而乾燥之塗料並使硬 化之燒結工程。 其結果，不用施予蝕刻等之切削加工，可以在蓋基板 用晶圓形成凹部。尤其，因不需要切削蓋基板用晶圓，故 可以減輕賦予晶圓之負荷，並可以連繫於壓電振動件之晶 質提昇。 (7 )上述貫通孔形成工程即使又具備在下模具和具 φ 有朝向下模具突出之插銷的上模具之間定置上述基座基板 用晶圓之定置工程；在加熱至特定溫度之狀態下，藉由上 述下模具和上述上模具加壓上述基座基板用晶圓，利用上 述插銷形成上述貫通孔之加壓工程；和使上述基座基板用 晶圓冷卻固化之冷卻工程亦可。 此時，於基座基板用晶圓形成貫通孔之時，可以藉由 利用模具之簡便方法確實形成貫通孔。 首先，執行將基座基板定置在下模具和上模具之定置 G 工程。然後，執行在將基座基板用晶圓加熱至特定溫度之 狀態下，以下模具和上模具加壓，並利用上模具之插銷在 基座基板用晶圓形成貫通孔之加壓工程。然後，最後執行 使上述基座基板用晶圓冷卻固化之冷卻工程。依此，可以 一次確實形成貫通孔。尤其，因利用下模具及上模具所構 成之模具，故可以提高貫通孔之位置精度。 (8)即使使用俯視呈圓形狀之晶圓當作上述基座基 板用晶圓亦可。 -12- 201017942 此時，因基座基板用晶圓爲圓形狀，故即使因加壓工 程之加熱，因冷卻工程之冷卻，而產生膨脹、收縮，在途 中形狀也難變形，可將尺寸精度、厚度精度維持高水準。 假設，於俯視呈矩形狀之晶圓之時，由於加熱、冷卻而產 生膨脹、收縮之時，則途中有形狀變形之虞，尺寸精度、 厚度精度則降低。該係因爲在晶圓存在角部，於膨脹時在 角部附近容易集中內部應力。因此，可想膨脹程度和收縮 φ 程度不均勻，難以回到原來之狀態。再者，於利用俯視呈 矩形狀之晶圓之時，不僅尺寸精度、厚度精度變低，由於 膨脹程度和收縮程度不均勻的影響，導致過度負荷作用於 上模具之插銷，插銷則有可能變形或彎折。 但是，因利用無角部之圓形狀晶圓，故即使藉由伴隨 加熱、冷卻之加壓加工形成貫通孔，產生上述問題之可能 性小。 (9)再者，本發明所涉及之壓電振動件具備：由在 ❹ 上面形成接合膜之玻璃材料所構成之基座基板；形成空腔 用之凹部，在使凹部與上述基座基板對向之狀態下經上述 接合膜被接合在基座基板之由玻璃材料所構成之蓋基板； 在利用上述凹部被收納在形成於上述基座基板和上述蓋基 板之間之空腔內的狀態下，被接合於基座基板之上面之壓 電振動片；被形成在上述基座基板之下面之一對外部電極 :被形成貫通上述基座基板，維持上述空腔內之氣密，並 且分別對上述一對外部電極電性連接之一對貫通電極；和 被形成在上述基座基板之上面，分別對所接合之上述壓電 -13- 201017942 振動片電性連接上述一對貫通電極的迂迴電極。 此時，可以達成與上述（1)所記載之壓電振動件之 製造方法相同之作用效果。 (10)上述壓電振動片即使經凸塊被凸塊接合在上述 基座基板之上面亦可。 此時，可以達成與上述（2)所記載之壓電振動件之 製造方法相同之作用效果。 (1 1 )上述凸塊即使被形成在被施予至少1 0秒以上 _ 電漿洗淨處理之區域亦可。 此時，可以達成與上述（3)所記載之壓電振動件之 製造方法相同之作用效果。 (12) 上述基座基板之上面即使被處理成算術平均粗 度Ra爲l〇nm以下亦可。 此時，可以達成與上述（4)所記載之壓電振動件之 製造方法相同之作用效果。 (13) 上述基座基板和上述蓋基板即使被陽極接合亦 @ 可。 此時，可以達成與上述（5)所記載之壓電振動件之 製造方法相同之作用效果。 (1 4 )再者，本發明所涉及之振盪器，係申請專利範 圍第9至13項中之任一項所記載之壓電振動件以振盪件 被電性連接於積體電路。 (1 5 )再者，本發明所涉及之電子機器，係申請專利 範圍第9至13項中之任一項所記載之壓電振動件被電性 -14- 201017942 連接於計時部。 (1 6 )再者，本發明所涉及之電波時鐘，係申請專利 範圍第9至1 3項中之任一項所記載之壓電振動件被電性 連接濾波器部。 若藉由上述振盪器、電子機器及電波時鐘時，因具備 有比以往更薄之小型化的壓電振動件，故同樣可以謀求小 型化，可以對應於今後更小型化之需求。 〔發明效果〕 若藉由本發明所涉及之壓電振動件時，可以較以往更 爲薄型，並可以謀求小型化。 再者，若藉由本發明所涉及之壓電振動件之製造方法 ，則可以一次效率佳地製造被小型化之表面安裝型之上述 壓電振動件，並可以謀求低成本化。 再者，若藉由本發明所涉及之振盪器、電子機器及電 φ 波時鐘時，因具備上述壓電振動件，故同樣可以謀求小型 化，可以對應於今後更小型化之需求。 【實施方式】 以下參照第1至17圖說明本發明之一實施型態。 本實施型態之壓電振動件1係如第1圖至4圖所示般 ，以基座基板2和蓋基板3形成被疊層兩層之箱狀，在內 部之空腔C內收納壓電振動片4之表面安裝型之壓電振動 件。 -15- 201017942 並且，在第4圖中，爲了易於觀看圖面，省略後述勵 振電極15、迂迴電極19、20、支架電極16、17及配重金 屬膜21之圖式。 壓電振動片4如第5至7圖所示般，爲由水晶、鉅酸 鋰或鈮酸鋰等之壓電材料所形成之音叉型之振動片，於施 加特定電壓之時振動。 該壓電振動片4具有被平行配置之一對振動腕部10、 1 1，和一體性固定該一對振動腕部1 〇、1 1之基端側的基 部12，和由被形成在一對振動腕部10、11之外表面上而 使一對振動腕部10、11振動之第1勵振電極13和第2勵 振電極14所構成之勵振電極15，和被電性連接於第1勵 振電極13及第2勵振電極14之支架電極16、17» 再者，本實施型態之壓電振動片4係在一對振動腕部 10、11之兩主面上，具備沿著振動腕部10、11之長邊方 向而分別形成的溝部18。該溝部18係從振動腕部10、11 之基端側而被形成至略中間附近。 由第1勵振電極13和第2勵振電極14所構成之勵振 電極1 5係在使一對振動腕部1 0、1 1互相接近或間隔開之 方向以特定共振頻率予以振動的電極，在一對振動腕部10 、11之外表面，於分別被電性切離之狀態下被圖案製作而 形成。具體而言，如第7圖所示般，第1振勵電極13主 要形成在一方振動腕部10之溝部18上，和另一方振動腕 部11之兩側面，第2勵振電極14主要被形成在一方之振 動腕部10之兩側面上和另一方之振動腕部11之溝部18 -16- 201017942 上。 第1勵振電極13及第2勵振電極14係如第5圖及第 6圖所示般，在基部12之兩主面上，分別經迂迴電極19 、20而被電性連接於支架電極16、17。然後，壓電振動 片4經該支架電極1 6、1 7而施加電壓。 並且，上述勵振電極15、支架電極16、17及迂迴電 極19、20係例如藉由鉻（Cr )、鎳（Ni )、鋁（A1 )或 φ 鈦（Ti)等之導電性膜之覆膜而所形成。 在一對振動腕部10、11之前端，覆膜用以執行調整 (頻率調整）使本身之振動狀態在特定之頻率之範圍內振 動之配重金屬膜21。並且，該配重金屬膜21被分爲粗調 整頻率之時所使用之粗調膜21a，和調整成微小之時所使 用之微調膜21b。利用該些粗調膜21a及微調膜21b執行 頻率調整，依此可以將一對振動腕部10、11之頻率限制 在裝置之公稱頻率的範圍內。 〇 構成如此之壓電振動片4係如第3圖及第4圖所示般 ，利用金等之凸塊B’被凸塊接合於基座基板2之上面。 更具體而言’在被形成在圖案製作於基座基板2上面之後 述迂迴電極36、37上的兩個凸塊b上，分別接觸一對支 架電極16、17之狀態下，被凸塊接合。依此，壓電振動 片4係在從基座基板2之上面浮起之狀態下被支撐，並且 成爲分別電性連接支架電極16、17和迁迴電極36、37之 狀態。 上述蓋基板3爲由玻璃材料，例如鈉鈣玻璃所構成之 -17- 201017942 透明絕緣基板，如第1圖、第3圖及第4圖所示般，形成 板狀。然後，接合基座基板2之接合面側，形成有收放壓 電振動片4之矩形狀之凹部3a。該凹部3a於重疊兩基板 2、3之時，爲成爲收容壓電振動片4之空腔C之空腔用 之凹部3a»然後，蓋基板3係在使該凹部3a與基座基板 2側對象之狀態下，對基座基板2陽極接合。 上述基座基板2係與蓋基板3相同，由玻璃材料，例 如鈉鈣玻璃所構成之透明絕緣基板，如第1至4圖所示般 _ ，以可對蓋基板3重疊之大小形成板狀。 在該基座基板2，形成有貫通基座基板2之一對通孔 (貫通孔）30、31。此時，一對通孔30、31被形成收放 在空腔內。當更詳細說明時，則係被形成一方之通孔30 位於被支架之壓電振動片4之基部1 2側，另一方之通孔 31位於振動腕部1〇、11之前端側。再者，在本實施型態 中，雖然舉出筆直貫通基座基板2之通孔30、31爲例而 予以說明，但是並不限定於此，即使例如朝向基座基板2 Q 之下面直徑漸漸縮徑之錐形狀易可。不管如何，若貫通基 座基板2即可。 然後，在該些一對通孔30、31形成有以掩埋通孔30 、31之方式所形成之一對貫通電極32、33。該貫通電極 32、33完全阻塞通孔30、31而維持空腔C內之氣密，並 且擔任導通後述外部電極38、39和迂迴電極36、37之任 務。 在基座基板2之上面側（接合蓋基板3之接合面側） -18 - 201017942 ，藉由導電性材料（例如鋁）圖案製作有陽極接合用之接 合膜35，和一對迂迴電極36、37。其中，接合膜35係以 包圍被形成在蓋基板3之凹部3a之周圍之方式沿著基座 基板2之周緣而被形成。 一對迂迴電極36、37係電性連接一對貫通電極32、 33中，一方貫通電極32和壓電振動片4之一方之支架電 極16，並且圖案製作成電性連接另一方之貫通電極33和 ❹ 壓電動片4之另一方之支架電極17。當更詳細說明時，則 如第2圖及第4圖所示般，一方之迂迴電極36係以位於 壓電振動片4之基部12之正下面之方式，被形成在一方 之貫通電極32之正上方。再者，另一方之迂迴電極37係 自鄰接於一方迂迴電極36之位置，沿著振動腕部1〇、11 而被迂迴至振動腕部10、11之前端側之後，被形成位於 另一方之貫通電極33之正上方。 然後，在該些一對迂迴電極36、37上形成凸塊B， 〇 利用該凸塊B支架壓電振動片4。依此，壓電振動片4之 一方之支架電極16經一方之迂迴電極36而導通至一方貫 通電極32，並且另一方之支架電極17經另一方之迂迴電 極37而導通至另一方之貫通電極33。 在基座基板2之下面，如第1圖、第3圖及第4圖所 示般，形成對一對貫通電極32、33分別電性連接之外部 電極38、39。即是，一方之外部電極38係經一方貫通電 極32及一方迂迴電極36被電性連接於壓電振動片4之第 1勵振電極13。再者，另一方之外部電極39係經另一方 -19- 201017942 貫通電極33及另一方迂迴電極37被電性連接於壓電振動 片4之第2勵振電極14。 於使如此構成之壓電振動件1動作之時，則對被形成 在基座基板2之外部電極38、39，施加特定驅動電壓。依 此，可以使電流流通於由壓電振動片4之第1勵振電極13 及第2勵振電極14所構成之勵振電極15，並且可以在使 —對振動腕部10、11接近、間隔開之方向以特定頻率予 以振動。然後，可以利用該一對振動腕部1 0、1 1，當作時 參 刻源、控制訊號之時序源或基準訊號源等而予以利用。 接著，針對一面參照第8圖所示之流程圖，一面利用 俯視呈圓形狀之基座基板用晶圓40和蓋基板用晶圓50而 依次多數製造之製造方法，以下予以說明。 首先，執行壓電振動片製作工程製作出第5圖至第7 圖所示之壓電振動片4。具體而言，首先以特定角度切割 水晶之藍伯特原石而設爲一定厚度之晶圓。接著，磨光該 晶圓而予以粗加工之後，以蝕刻去除加工變質層，之後執 ❿ 行拋光等之鏡面等硏磨加工，成爲特定厚度之晶圓。接著 ，對晶圓施予洗淨等之適當處理之後，藉由光微影技術以 壓電振動片4之外形形狀圖案製作該晶圓，並且執行金屬 膜之成膜及圖案製作，形成勵振電極15，迂迴電極19、 20、支架電極16、17、配重金屬膜21。依此，可以製作 出多數壓電振動片4。 於至最初壓電振動片4之後，執行共振頻率之粗調。 該係藉由對配重金屬膜21之粗調膜21a照射雷射光，使 -20- 201017942 一部分蒸發，並使重量變化而執行。並且，關於更高精度 調整共振頻率之微調，於支架後執行。針對此於後說明。 接著，執行至執行陽極接合之前一刻的狀態爲止製作 之後成爲蓋基板3之蓋基板用晶圓50的第1晶圓製作工 程（S20 )。首先，將納鈣玻璃硏磨加工至定厚度而予以 洗淨之後，如第9圖所示般，形成藉由蝕刻等除去最表面 之加工變質層之圓板狀之蓋基板用晶圓50»接著，在蓋基 Q 板用晶圓50之接合面，藉由蝕刻等在行列方向多數形成 空腔C用之凹部3a之凹部形成工程（S22)。在該時點， 結束第1晶圓製作工程。 接著，在與上述工程同時或前後之時序，執行至執行 陽極接合之前之狀態爲止製作之後成爲基座基板2之基座 基板用晶圓40的第2晶圓製作工程（S30)。首先’將納 鈣玻璃硏磨加工至定厚度而予以洗淨之後，形成藉由蝕刻 等除去最表面之加工變質層之圓板狀之基座基板用晶圓40 ❹ (S31)。接著，如第1〇圖所示般，多數形成貫通基座基 板用晶圓40之一對通孔30、31之貫通孔形成工程（S3 2 )。並且，第1〇圖所示之虛線1^係表示在之後所執行之 切斷工程中切斷的切斷線。 此時，之後於重叠兩晶圓之時’以收放在形成在蓋基 板用晶圓50之凹部3a內之方式多數形成一對貫通孔30、 31。而且，形成一方之通孔30位於之後支架的壓電振動 片4之基部12側，另一方之通孔31位於振動腕部10、11 之前端側。 -21 - 201017942 接著，執行以無圖式之導電體掩埋多數形成之多數一 對貫通孔30、31，而多數形成一對貫通電極32、33的貫 通電極形成工程（S33 )。 接著，在基座基板用晶圓40之上面，圖案製作導電 性材料，如第11圖及第12圖所示般’執行形成接合膜35 之接合膜形成工程（S34 )，並且多數形成分別被電性連 接於一對貫通電極32、33之迂迴電極36、37的迂迴電極 形成工程（S35)。並且，第11圖及第12圖所示之虛線 @ Μ係表示之後所執行之切斷工程中切斷的切斷線。並且， 在第12圖中，省略接合膜35之圖式。 藉由執行該工程，則成爲一方之貫通電極32和一方 之迂迴電極36導通，並且另一方之貫通電極33和另一方 之迂迴電極37導通之狀態。在該時點，結束第2晶圓製 作工程。 然而，在第8圖中，於接合膜形成工程（S 34)之後 ，雖然爲執行迂迴電極形成工程（S35)之工程順序，但 φ 是即使與此相反，於迂迴電極形成工程（S3 5)之後，執 行接合膜形成工程（S 34)亦可，即使同時執行兩工程亦 可。即使任一之工程順序，亦可以達到相同之作用效果。 依此，因應所需適當變更工程順序也無妨。 接著，執行將所製作之多數壓電振動片4分別經迂迴 電極36、37而凸塊接合於基座基板用晶圓40之上面的支 架工程（S40)。首先，在一對迂迴電極36、37上分別形 成金等之凸塊Β。然後，於將壓電振動片4之基部12載 -22- 201017942 置在凸塊B上之後，一面將凸塊B加熱至特定溫度，一面 將壓電振動片4推壓至凸塊B。依此，壓電振動片4係機 械性被支持於凸塊B，並且成爲電性連接支架電極16、17 和迂迴電極36、37之狀態。依此，在該時點，壓電振動 片4之一對勵振電極15成爲分別對一對貫通電極32、33 導通之狀態。尤其，因壓電振動片4被凸塊接合，故在自 基座基板用晶圓40之上面浮起之狀態下被支持。 0 在壓電振動片4之支架結束之後，執行對基座基板用 晶圓40重疊蓋基板用晶圓50之重疊工程（S50 )。具體 而言，一面將無圖式之基準標記當作指標，一面將兩晶圓 40、50對準正確位置。依此，成爲被支架之壓電振動片4 收容在以形成在基座基板用晶圓40之凹部3a和兩晶圓40 、50所包圍之空腔C內的狀態。 於重疊工程之後，執行將重疊之兩片晶圓40、50放 入至無圖式之陽極接合裝置，並在特定溫度環境下施加特 〇 定電壓而予以陽極接合之接合工程（S60)。具體而言， 在接合膜3 5和蓋基板用晶圓5 0之間施加特定電壓。如此 一來，在接合膜35和蓋基板用晶圓50之介面產生電性化 學性反應，兩者各被緊密接合而被陽極接合。依此，可以 將壓電振動片4密封在空腔C內，並可以取得接合基座基 板用晶圓40和蓋基板用晶圓50之第13圖所示之晶圓體 60。並且，在第13圖中，爲了容易觀看圖面，表示分解 晶圓體60之狀態，從基座基板用晶圓40省略接合膜35 之圖式。並且，第13圖所示之虛線Μ係表示在之後所執 -23- 201017942 行之切斷工程中切斷的切斷線。 然而，於執行陽極接合之時，被形成在基座基板用晶 圓40之通孔30、31因藉由貫通電極32、33完全被阻塞 ，故空腔C內之氣密通過通孔30、31而不會受損。 然後，上述陽極接合結束後，在基座基板用晶圓40 之下面，圖案製作導電性材料，而執行多數形成分別被電 性連接於多數一對貫通電極32、33之一對外部電極38、 39的外部電極形成工程。藉由該工程，可以利用外部電極 @ 38、39使被密封在空腔C內之壓電振動片4動作。 接著，在晶圓體60之狀態下，執行微調整被密封在 空腔C內之各個壓電振動件1之頻率而限制在特定範圍內 之微調工程（S80)。當具體說明時，對外部電極38、39 施加電壓而使壓電振動片4振動。然後，一面測量頻率一 面通過蓋基板用晶圓50而自外部照射雷射光，使配重金 屬膜21之微調膜21b蒸發。依此，因一對振動腕部10、 11之前端側之重量變化，故可以將壓電振動片4之頻率微 @ 調整成在公稱頻率之特定範圍內。 於頻率之微調結束之後，執行沿著第13圖所示之切 斷線Μ切斷所接合之晶圓體60而使成爲小片之切斷工程 (S90 )。其結果，可以一次多數製造在被形成於互相陽 極接合之基座基板2和蓋基板3之間之空腔C內密封壓電 振動片4之第1圖所示之表面安裝型之壓電振動件。 並且，執行切斷工程（S 90)而切成小片成爲各個壓 電振動件1之後，即使爲執行微調工程（S80 )之工程順 -24- 201017942 序亦可。但是，如上述般，因藉由先執行微調工程（S8〇 )，可以在晶圓體60之狀態執行微調’故可以更有效率 微調多數壓電振動件1。依此’因可以謀求提高生產量’ 故爲更佳。 之後，執行內部之電特性（S100)。即是，測量壓電 振動片4之共振頻率 '共振電阻値、驅動位準特性（共振 頻率及共振電阻値之勵振電力依存性）等而予以確認。再 φ 者，一起確認絕緣電阻特性。然後’最後執行壓電振動件 1之外觀檢查，最後確認尺寸或品質。依此’結束壓電振 動件1之製造。 尤其，本實施型態之壓電振動件1係與以往之3層構 造不同，因係接合基座基板2和蓋基板3之2層構造，故 僅以往之壓電基板部分則可以使全體之厚度變薄。因此， 比起以往可以使厚度更薄，可以謀求小型化。而且，如上 述般壓電振動片4因藉由凸塊接合在從基座基板2浮起之 ❹ 狀態下被支撐，故可以自然確保振動所需之最小限的振動 間距。依此，與蓋基板3不同，不需要在基座基板2側形 成空腔C用之凹部3a，即使爲平板狀之基板亦可。因此 ’不考慮凹部3a之部分，則可以儘可能使基座基板2之 厚度變薄。即使該點亦可以謀求壓電振動件1之薄型化。 再者，若藉由本實施型態之製造方法，因可以一次多 數製造被薄型化之上述壓電振動件1，故可以謀求低成本 化。 再者，藉由凸塊接合壓電振動片4，比起一般之銲錫 -25- 201017942 接合可以取得以下之優點。 即是，於凸塊接合之時，比起銲錫接合之時’雖然 C0特性幾乎相同’但可以縮小C1特性。在此’針對C0 、C1予以簡單說明。C0爲第14圖所示之振動件之等效電 路中之並聯電容’實際上爲可測量之數値。另外’ C1爲 第14圖所示之等效電路中之串聯電容，藉由第15圖所示 之計算式算出而所取得之數値。並且，此時，計算式中之 △ f、CO、CL、Fr分別爲可測量之數値。 _ 在此，在藉由銲錫接合支架壓電振動片4之壓電振動 件，和凸塊接合壓電振動片4之上述實施型態之壓電振動 件丨中，將實際測量C0之數値，和算出C1之數値表示於 第16圖。並且，兩壓電振動件僅有銲錫接合或凸塊接合 有所不同，除此之外之條件爲相同。 其結果，如第16圖所示般，確認出凸塊接合之時比 銲錫接合之時，C1特性較低。該應該係由於壓電振動片4 之支架狀態所造成者。即是，於銲錫接合之時，壓電振動 @ 片4對銲錫面接觸之狀態下被支架。另外，於銲錫接合之 時，壓電振動片4對凸塊B接近點接觸之狀態下被支架。 因此，壓電振動片在較少接觸之狀態下浮起，可想C1特 性變低。 然後，確認出因凸塊接合之方式使C1特性變低，故 容量比（co/ci ) r較銲錫接合之時大。一般當容量比r 變大時，可以謀求低cl (電容負載）化，並可以聯繫於 低消耗電力化。因此，於凸塊接合之時，比起銲錫接合之 -26- 201017942 時，可以達成製造省電力之壓電振動件之效果。 再者，電容費T係對第17圖所示之CL曲線（橫軸： CL，縱軸Af/f)之曲線特性造成影響，越大越快成爲曲 線接近於水平之狀態。即是，從以實線所示之CL曲線（ L1)成爲以虛線所示之CL曲線（L2)。因此’在事先所 決定之Af/f之範圍（例如，±20ppm )內，容易陷入CL曲 線，亦可以達到容易製造之效果。 φ 接著，針對本發明所涉及之振盪器之一實施型態，一 面參照第18圖，一面予以說明。 本實施型態之振盪器1〇〇係如第18圖所示般，將壓 電振動件1當作電性連接於積體電路101之振盪件而構成 。該振盪器100具備有安裝電容器等之電子零件102的基 板103。在基板103安裝有振盪器用之上述積體電路101 ，在該積體電路101之附近安裝有壓電振動件1之壓電振 動片4。該些電子零件102、積體電路101以及壓電振動 Ο 件1係藉由無圖式之配線圖案而分別被電性連接。並且， 各構成零件係藉由無圖式之樹脂而被塑模。 在如此被構成之振盪器100中，當對壓電振動件1施 加電壓時，壓電振動件1之壓動片4則振動。該振動係藉 由壓電振動片4所具有之壓電特性被變換成電訊號，當作 電訊號被輸入至積體電路101。被輸入之電訊號藉由積體 電路101被施予各種處理，當作頻率訊號被輸出。依此， 壓電振動件1當作振動件發揮功能。 再者。積體電路101之構成除藉由因應要求選擇性設 -27- 201017942 定例如RTC (實時時鐘）模組等而附加時鐘用單功能振盪 器等之外，亦可附加控制該機器或動作日或時刻，或者控 制時刻或日曆等之功能。 如上述般，若依據本實施型態之振盪器100時，因具 備有比以往更薄之小型化的壓電振動件1，故振盪器1 00 本身也同樣可以謀求小型化，可以對應於今後更小型化之 需求。除此之外，可以取得長期上安定之高精度的頻率訊 號。 Θ 接著，針對本發明所涉及之電子機器之一實施型態， 參照第19圖予以說明。並且，電子機器係以具有上述壓 電振動件1之攜帶資訊機器110爲例而予以說明》首先， 本實施型態之攜帶資訊機器110例如以行動電話爲代表， 爲發展、改良先行技術中之手錶。外觀類似手錶，相當於 文字盤之部分配置有液晶顯示器，可以在該畫面上顯示現 在時刻等。再者，於當作通訊機利用之時，自手腕拆下， 並藉由內藏在錶帶之內側部分之擴音器及送話器，可執行 0 與先行技術之行動電話相同之通訊。但是，比起以往之行 動電話，顯著被小型化及輕量化。 接著’針對本發明之攜帶資訊機器110之構成予以說 明。該攜帶資訊機器110係如第19圖所示般，具備壓電 振動件1和用以供給電力之電源部111。電源部111係由 例如鋰二次電池所構成。在該電源部111並聯連接執行各 種控制之控制部1 1 2，和執行時刻等之計數的計時部1 1 3 ’和執行與外部通訊之通訊部114，和顯示各種資訊之顯 -28- 201017942 示部115，和檢測出各個功能部之電壓的電壓檢測部116 。然後’藉由電源部111，電力被供給至各功能部。 控制部1 1 2係控制各功能部而執行聲音資料之發送及 接收、現在時刻之測量或顯示等 '系統全體之動作控制。 再者，控制部112具備有事先寫入程式之ROM，和讀出被 寫入於該ROM之程式而予以實行之CPU，和當作該CPU 之工作區域使用之RAM等。 Φ 計時部113具備有內藏振盪電路、暫存器電路、計數 器電路及介面電路等之積體電路，和壓電振動件1。當對 壓電振動件1施加電壓之時，壓電振動片4振動，振動藉 由水晶所具有之壓電特性被變換至電訊號，當作電訊號被 輸入至振動電路。振盪電路之輸出被二値化，藉由暫存器 電路和計數器電路被計數。然後，經介面電路，執行對控 制部112發送接收訊號，在顯示部115顯示現在時刻或現 在是其或日曆資訊等。 G 通訊部114具備有與以往行動電話相同之功能的無線 部117、聲音處理部118、切換部119、放大部120、聲音 輸入輸出部121、電話號碼輸入部、來電鈴聲產生部123 及呼叫控制記憶體部124。 無線部117係將聲音資料等之各種資料經天線125而 執行與基地台之發送接收的處理。聲音處理部118係將自 無線部117或放大部120輸入之聲音訊號予以編碼化或解 碼化。放大部120係將自聲音處理部118或聲音輸入輸出 部121所輸入之訊號放大至特定位準。聲音輸入輸出部 -29- 201017942 121係由擴音器或送話器等所構成，擴音來電鈴聲或通話 聲音，或集中聲音。 再者，來電鈴聲產生部123係因應來自基地台之呼叫 而產生來電鈴聲。切換部119僅在來電時，藉由將被連接 於聲音處理部11 8之放大部1 2 0切換至來電鈴聲產生部 123，在來電鈴聲產生部123中產生之來電鈴聲經放大部 120而被輸出至聲音輸入輸出部121。 並且，呼叫控制記憶部1 24儲存通訊之雙向呼叫控制 所涉及之程式。再者，電話號碼輸入部122具備有例如從 〇至9之號碼鍵及其他鍵，藉由按下該些號碼鍵等，輸入 連絡人之電話號碼等。 電壓檢測部1 1 6係當藉由電源部1 1 1而對控制部1 1 2 等之各功能部施加之電壓，低於特定値之時，檢測出其電 壓下降而通知控制部112。此時之特定電壓値係當作爲了 使通訊部114安定動作所需之最低限之電壓而是先被設置 之値，例如3 V左右。自電壓檢測部1 1 6接收到電壓下降 之通知的控制部112禁止無線部117、聲音處理部118、 切換部119以及來電鈴聲產生部123之動作。尤其，消耗 電力大之無線部117之動作必須停止。並且，在顯示部 115，顯示通訊部114由於電池殘量不足而不能使用之主 旨。 即是，可以藉由電壓檢測部1 1 6和控制部1 1 2，禁止 通訊部114之動作’在顯示部115顯示其主旨。該顯示即 使爲文字訊息亦可’即使作爲直覺性的顯示，在被顯示於 -30- 201017942 顯示部115之顯示面之上部之電話圖示，標示χ(叉號） 記號亦可。 並且，具備有可以選擇性阻斷通訊部114之功能之所 涉及之部分之電源的電源阻斷部126，依此可以更確實停 止通訊部1 1 4之功能。 如上述般，若依據本實施型態之攜帶資訊機器110時 ，因具備有比以往更薄之小型化的壓電振動件1，故振盪 φ 器1 〇〇本身也同樣可以謀求小型化，可以對應於今後更小 型化之需求。除此之外，可以顯示長期上安定之高精度的 時鐘資訊。 接著，針對本發明所涉及之電波時鐘，參照第20圖 予以說明。 本實施型態之電波時鐘130係如第20圖所示般，具 備被電性連接於濾波器131之壓電振動件1，爲具備有接 收含有時鐘資訊之標準電波，而自動修正成正確時刻而予 φ 以顯示之功能的時鐘。 在日本國內，於福島縣（40kHz)和佐賀縣（60kHz) ，擁有發送標準電波之送訊所（送訊局），各發送標準電 波。如40kHz或是60kHz般之長波，因兼具傳播地表之性 質，和一面反射電離層和地表一面傳播之性質，故傳播範 圍廣，以上述兩個送訊所網羅日本國內各地。 以下，針對電波時鐘130之功能性構成予以詳細說明 〇 天線132係接收40kHz或是60kHz之長波之標準電波 -31 - 201017942 。長波之標準電波係將被稱爲時間碼之時刻資訊在40kHz 或是60kHz之搬運波施加AM調頻。所接收到之長波之標 準電波係藉由放大器133而被放大，藉由具有多數壓電振 動件1之濾波部131而被濾波、調諧。 本實施型態中之壓電振動件1分別具備有水晶振動件 部138、139，該水晶振動件部138、139擁有與上述搬運 頻率相同之40kHz以及60kHz之共振頻率。 並且，被濾波之特定頻率之訊號係藉由檢波、整流電 _201017942 VI. Description of the invention: TECHNICAL FIELD OF THE INVENTION The present invention relates to a cavity formed between two bonded substrates, a surface-mounted (SMD) piezoelectric vibrating member that seals a piezoelectric vibrating piece, And a method of manufacturing the piezoelectric vibrating member for manufacturing the piezoelectric vibrating member, And an oscillator having the piezoelectric vibrating member, Electronic machines and radio clocks. 〇 [Advance technology] In recent years, In a mobile phone or mobile information terminal machine, A piezoelectric vibrating member using a crystal or the like is used as a timing source of a time source or a control signal, Reference signal source. The piezoelectric vibrating members of this kind are known in various ways. But for one example, A surface-mounted piezoelectric vibrating member is known. A three-layer structure of a piezoelectric substrate in which a piezoelectric vibrating member is bonded to a base substrate and a lid substrate from above and below is generally known (see Patent Documents 1 and 2). ❹ Here, A brief description will be given of a piezoelectric vibrating member of a three-layer structure type. As shown in Figure 35, The piezoelectric vibrating member 200 is a piezoelectric substrate 201' on which the piezoelectric vibrating piece 201a is formed, and a base substrate 202 and a lid substrate which are bonded to the piezoelectric substrate 201 in a state in which the piezoelectric substrate 201 is sandwiched from above and below. 203 constitutes three layers. The piezoelectric substrate 201 is formed of a piezoelectric material such as quartz. The frame portion 201b and the piezoelectric vibrating piece 201a connected to the frame portion 201b are formed. and, The portion of the frame portion 201b joins the two substrates 202, 203. In addition, The piezoelectric vibrating piece 201a is housed in two substrates -5 - 201017942 02, a recess 202a of 203, Inside the cavity formed by 203a. The piezoelectric vibrating piece 20 1a is patterned with an electrode 204a for vibrating the piezoelectric vibrating piece 201a when a voltage is applied, 204b. Two substrates 202, 203 is a transparent insulator such as glass. The bonding film 205 is bonded to the frame portion 201b of the piezoelectric substrate 201 (for example, Anode bonding). Furthermore, Two substrates 202, 203 is formed with a recess 202a for forming the cavity C on the inner surface as described above, 203a. On the two substrates 202, The bottom surface of the base substrate 202 in 203, Covering _ the side is formed with an external electrode 206a, 206b. among them, One of the external electrodes 206a is electrically connected to one of the electrodes 204a of the piezoelectric vibrating piece 201a. The other external electrode 206b is electrically connected to the other electrode 204b of the piezoelectric vibrating piece 201a. Patent Document 1: Japanese Patent Publication No. 2006-148758 Patent Document 2: Japanese Laid-Open Patent Publication No. 2007-184810. SUMMARY OF INVENTION [Problems to be solved by the invention] However, In the conventional piezoelectric vibrator 2000, the following problems remain: 〇 First, With the miniaturization of electronic devices in recent years, Even with regard to the piezoelectric vibrating member 200 mounted on the various electronic devices, it is required to be more compact. but, The conventional piezoelectric vibrator 200 has a three-layer structure type in which the piezoelectric substrate 201 is sandwiched between the base substrate 202 and the lid substrate 203. So no matter how the thickness is produced, It is difficult to seek more thinner. especially, 必-6-201017942 A recess 202a for forming the cavity C is formed on both the base substrate 202 and the lid substrate 203, 203a, Therefore, the two substrates must be 02, The thickness of 203 is set to a thickness of a certain thickness or more. For that point, It is difficult to achieve thinning. The present invention has been created in consideration of such things, Its purpose is to provide a thinner than ever, A surface mount type piezoelectric vibration device that is miniaturized. 〇 Again, Providing a method for manufacturing a piezoelectric vibrating member which is excellent in the production of the piezoelectric vibrating member at one time, And an oscillator having a piezoelectric vibrating member, Electronic machine, Radio clock. (Means for Solving the Problem) The present invention achieves the objects involved in order to solve the above problems. Provide the following means. (1) A method of manufacturing a piezoelectric vibrating member according to the present invention, In order to use the wafer for the base substrate and the wafer for the cover substrate, A method of sealing a piezoelectric vibrating piece of a piezoelectric vibrating piece formed in a cavity formed between a base substrate and a cover substrate bonded to each other at a time, Have: a recess forming portion for forming a recess for a cavity of the cavity when the cover substrate is formed by a plurality of wafers; A plurality of through-hole forming processes are formed to penetrate the through-holes of one of the wafers for the base substrate; The above-mentioned pair of through holes formed by the majority of the conductors are buried, And a plurality of through electrodes forming a pair of through electrodes forming a process; Above the wafer for the base substrate, A bonding film forming process for forming a bonding film so as to surround the periphery of the above-mentioned concave portion, On the above substrate of the base substrate 201017942, Most of the formation of the routing electrode for forming the routing electrode electrically connected to the pair of through electrodes; a plurality of the piezoelectric vibrating reeds bonded to the upper surface of the wafer for the susceptor substrate via the lead-out electrode; The wafer for the base substrate and the wafer for the lid substrate are stacked, And superposing the piezoelectric vibrating piece in the cavity surrounded by the concave portion and the two wafers; The base substrate wafer and the lid substrate wafer are bonded to each other via the bonding film. Sealing the joint of the piezoelectric vibrating piece in the cavity; Below the wafer for the base substrate, Most of the formation _ is not electrically connected to the external electrode of the external electrode; And cutting off the two wafers that are bonded, Cutting into small pieces makes it a cutting process for most of the above-mentioned piezoelectric vibrating members. If by the above manufacturing method, First, a concave portion forming portion of the concave portion for the cavity is formed in the wafer for the cover substrate. The recesses are when the two wafers are overlapped later, Become a recess in the cavity. Furthermore, At the same time as or before and after the project, A plurality of through-hole forming processes for forming a through-hole of one of the through-substrate substrate wafers are performed. at this time, Later, when the two wafers are overlapped, 多数 A plurality of pairs of through holes are formed in a manner to be housed in the recess formed in the wafer for a cover substrate. then, A plurality of through-holes formed by a plurality of conductors are buried by a plurality of conductors, and a plurality of through-electrodes forming a pair of through electrodes are formed. then, On the top of the wafer for the base substrate, In the patterning of the conductive material, a plurality of routing electrodes for forming the routing electrodes electrically connected to the pair of through electrodes are formed. at this time, Then, at the time of stacking the two wafers, a plurality of routing electrodes are formed so as to be housed in the recess formed in the wafer for the lid substrate. Furthermore, A bonding film forming process in which a bonding film is formed on the upper surface of the wafer for the base substrate so as to surround the periphery of the concave portion is performed at the same time as the formation of the routing electrode or at the timing after the first -8 to 201017942. then, A scaffolding process in which a plurality of the above-described piezoelectric vibrating reeds are bonded to the upper surface of the wafer for a base substrate is performed via a lead-out electrode. According to this, each of the piezoelectric vibrating reeds to be joined is in a state in which the pair of through electrodes are electrically connected via the lead-out electrode. After the stent is over, The overlapping process of the wafer for the overlapped base substrate and the wafer for the cover substrate is performed. Accordingly, The plurality of piezoelectric vibrating reeds to be joined are in a state of being housed in a cavity surrounded by the concave portion and the two wafers. Then, 'the joining process of joining the two wafers by the bonding film is performed. Accordingly, The piezoelectric vibrating piece can be sealed in the cavity. at this time, The through hole formed in the susceptor wafer is blocked by the through electrode. Therefore, the airtightness in the cavity is not damaged by the through hole. then, After joining, Under the wafer for the base substrate, Patterning conductive materials, The majority of the formation is performed by externally forming an external electrode which is electrically connected to one of the plurality of pairs of through electrodes to the external electrodes. With the project, The piezoelectric vibrating piece sealed in the G cavity can be operated by an external electrode. At last, Performing switching of the bonded base substrate wafer and the lid substrate wafer, The cutting into small pieces makes it a cutting process for most piezoelectric vibrating members. the result, A surface mount type piezoelectric vibrating member in which a piezoelectric vibrating piece is sealed in a cavity formed between a base substrate and a lid substrate which are anodically bonded to each other can be manufactured at a time. especially, Different from the previous three-layer structure, Since the two-layer structure of the base substrate and the lid substrate is bonded, Therefore, only the conventional piezoelectric substrate portion can make the entire thickness thin. therefore, Thinner than ever, It can be miniaturized. -9- 201017942 (2) At the time of the bracket project, After forming bumps on the above-mentioned routing electrodes, The piezoelectric vibrating piece bumps may be bonded to the upper surface of the wafer for the susceptor substrate via bumps. at this time, Since the piezoelectric vibrating piece is bonded to the upper surface of the base substrate by bumps, Therefore, the base substrate is supported in a floating state. therefore, The minimum vibration spacing required for vibration can be naturally ensured. Accordingly, Different from the cover substrate, It is not necessary to form a recess for the cavity on the side of the base substrate, Even a flat plate can be used. therefore, Regardless of the part of the recess, The thickness of the susceptor _ substrate can be made as thin as possible. Even at this point, the piezoelectric vibrating member can be made thinner. (3) At the time of the scaffolding, Even after the above-mentioned circuitous electrode is subjected to at least 10 seconds of plasma washing treatment, The above bumps may also be formed. at this time, Before forming the bumps, Irradiating the electrode with the plasma (for example, Oxygen plasma) is applied to the plasma cleaning treatment. Accordingly, It can remove pollution sources such as dust. The face forming the bump becomes a clean surface, And the surface has also been modified. especially, Due to at least 10 seconds of plasma, Therefore, there is no residual source of pollution @ to be removed. Accordingly, Can improve the adhesion to the bumps, Jointability, And can improve the shear peel strength of the bump. therefore, The performance of the support of the piezoelectric vibrating piece can be improved. As a result, it is possible to improve the quality of the piezoelectric vibrating member. (4) Even after the above-mentioned through hole forming process, Performing surface processing on the wafer for the above-mentioned base substrate, The surface processing project in which the arithmetic mean roughness Ra is set to 1 Onm or less is also acceptable. at this time, Before forming the bumps, The arithmetic mean roughness Ra of -10- 201017942 on the upper surface of the wafer for the base substrate is set to 1 〇 nm or less. Accordingly, It is possible to make the upper surface of the wafer for the base substrate which is the base for forming the bumps as close as possible to the smooth surface. therefore, Can improve the adhesion to the bumps, Bonding' can improve the shear peel strength of the bumps. therefore, The performance of the support of the piezoelectric vibrating piece can be improved. It is also possible to achieve high quality of the piezoelectric vibrating member. (5) Even at the time of the above joint work, The susceptor substrate wafer may be anodically bonded to the wafer for the lid substrate. φ At this time, Since the base wafer and the lid substrate wafer are bonded to the anode, the two wafers can be bonded in a state in which the two wafers are bonded more strongly. therefore, The piezoelectric vibrating piece can be more reliably sealed in the cavity. Vibration characteristics can be improved. (6) The above-described recess forming process includes a printing process of screen-printing a coating on the surface of the wafer for a cover substrate in a specific pattern; a drying process for drying the above-mentioned paint to be printed; And after repeatedly performing the above-mentioned printing process and the above-mentioned drying process until the concave portion is formed by repeated painting of the above-mentioned paint, Sintering of a paint that is repeatedly coated and dried can be sintered. at this time, When the recess for the cavity is formed in the wafer for the cover substrate, Without applying etching such as etching, A recess can be formed. First of all, A printing process in which the coating is screen-printed on the surface of the wafer for the cover substrate in a specific pattern so as to surround the portion which becomes the concave portion is performed. then, Perform a drying process to dry the printed paint. then, Perform the printing project again, Repeat the painting by printing a new paint on the dry paint web. In this way, Repeated printing and drying projects many times. Until the recess is formed by repeating the coating of -11 - 201017942. then, After forming a recess by repeated painting of the coating, The sintering is repeated by painting and drying the coating and hardening the sintering process. the result, No need to apply etching such as etching, A recess can be formed in the wafer for the cover substrate. especially, Since it is not necessary to cut the wafer for the cover substrate, Therefore, the load on the wafer can be reduced. It can be connected to the crystal lift of the piezoelectric vibrating member. (7) The through-hole forming process further includes a fixing process for fixing the wafer for the base substrate between the lower mold and the upper mold having the plug protruding toward the lower mold; In the state of heating to a specific temperature, Pressing the wafer for the base substrate by the lower mold and the upper mold, Pressurizing the through hole by using the above plug; And cooling work for cooling and solidifying the base substrate wafer. at this time, When the through hole is formed in the base substrate wafer, The through hole can be surely formed by a simple method using a mold. First of all, A fixed G project is performed to position the base substrate in the lower mold and the upper mold. then, Performing the process of heating the base substrate wafer to a specific temperature, The following mold and upper mold are pressurized, Further, a pressurizing process for forming a through hole in the base substrate wafer by the plug of the upper mold is used. then, Finally, a cooling process for cooling and solidifying the base substrate wafer is performed. Accordingly, The through hole can be surely formed at one time. especially, Due to the use of the mold formed by the lower mold and the upper mold, Therefore, the positional accuracy of the through hole can be improved. (8) Even if a wafer having a circular shape in plan view is used as the wafer for the susceptor substrate. -12- 201017942 At this time, Since the wafer for the base substrate has a circular shape, Therefore, even due to the heating of the pressurization process, Cooling due to cooling engineering, And swell, shrink, The shape is also difficult to deform on the way. Dimensional accuracy, The thickness accuracy is maintained at a high level. Assume that When looking down at a rectangular wafer, Due to heating, Cooling and causing expansion, When contracting, Then there is a shape deformation on the way, Dimensional accuracy, Thickness accuracy is reduced. Because the system has corners on the wafer, It is easy to concentrate internal stress near the corners during expansion. therefore, It is conceivable that the degree of expansion and the degree of contraction φ are not uniform. It is difficult to return to the original state. Furthermore, When using a wafer having a rectangular shape in plan view, Not only dimensional accuracy, Thickness accuracy is low, Due to the degree of expansion and the uneven degree of shrinkage, a pin that causes excessive loading on the upper mold, The pin may be deformed or bent. but, Because of the use of rounded wafers without corners, Therefore, even by accompanying heating, Pressurization by cooling forms a through hole, The possibility of causing the above problems is small. (9) Again, The piezoelectric vibrating member according to the present invention has: a base substrate composed of a glass material forming a bonding film on the ❹; a recess for forming a cavity, a cover substrate made of a glass material bonded to the base substrate via the bonding film in a state in which the concave portion is opposed to the base substrate; In a state in which the recessed portion is housed in a cavity formed between the base substrate and the cover base plate, a piezoelectric vibrating piece bonded to the upper surface of the base substrate; One of the pair of external electrodes formed under the base substrate: Formed through the base substrate, Maintaining the airtightness in the above cavity, And electrically connecting one of the pair of external electrodes to the through electrode; And being formed on the base substrate, The above-mentioned piezoelectric-13-201017942 vibrating piece is electrically connected to the lead-out electrode of the pair of through electrodes, respectively. at this time, The same operational effects as those of the piezoelectric vibrating member described in the above (1) can be achieved. (10) The piezoelectric vibrating piece may be bonded to the upper surface of the base substrate via bumps. at this time, The same operational effects as those of the piezoelectric vibrating member described in the above (2) can be achieved. (1 1) The above-mentioned bumps may be formed in a region to be subjected to plasma cleaning treatment for at least 10 seconds or more. at this time, The same operational effects as those of the piezoelectric vibrating member described in the above (3) can be achieved. (12) The upper surface of the base substrate may be processed to have an arithmetic mean roughness Ra of 10 nm or less. at this time, The same effects as those of the piezoelectric vibrating member described in the above (4) can be achieved. (13) The base substrate and the lid substrate may be joined by anodization. at this time, The same operational effects as those of the piezoelectric vibrating member described in the above (5) can be achieved. (1 4 ) Again, An oscillator according to the present invention, The piezoelectric vibrating member described in any one of claims 9 to 13 is electrically connected to the integrated circuit by an oscillating member. (1 5 ) Again, An electronic device according to the present invention, The piezoelectric vibrating member described in any one of the items 9 to 13 is connected to the time measuring portion by the electric -14-201017942. (1 6 ) Again, The radio wave clock according to the present invention, The piezoelectric vibrator described in any one of the items 9 to 13 of the patent application is electrically connected to the filter unit. If by the above oscillator, When using electronic equipment and radio clocks, With a piezoelectric vibrating piece that is thinner than ever, Therefore, it is also possible to achieve miniaturization. It can correspond to the need for more miniaturization in the future. [Effect of the Invention] When the piezoelectric vibrating member according to the present invention is used, Can be thinner than ever, And can be miniaturized. Furthermore, According to the method of manufacturing a piezoelectric vibrating member according to the present invention, The above-mentioned piezoelectric vibrating member of the miniaturized surface mount type can be manufactured efficiently at one time. And it can be reduced in cost. Furthermore, According to the oscillator of the present invention, When the electronic machine and the electric φ wave clock, Because of the above piezoelectric vibrating member, Therefore, it is also possible to achieve miniaturization. It can correspond to the need for more miniaturization in the future. [Embodiment] An embodiment of the present invention will be described below with reference to Figs. The piezoelectric vibrating member 1 of the present embodiment is as shown in Figs. 1 to 4, The base substrate 2 and the lid substrate 3 are formed in a box shape in which two layers are laminated. A surface mount type piezoelectric vibrating member of the piezoelectric vibrating reed 4 is housed in the inner cavity C. -15- 201017942 Also, In Figure 4, In order to make it easy to view the picture, The excitation electrode 15 to be described later is omitted. 迂 electrode 19, 20. Bracket electrode 16, 17 and the pattern of the weight metal film 21. The piezoelectric vibrating piece 4 is as shown in FIGS. 5 to 7, For crystal, a tuning-fork type vibrating piece formed of a piezoelectric material such as lithium or lithium niobate Vibrate when a specific voltage is applied. The piezoelectric vibrating reed 4 has a pair of vibrating arms 10 arranged in parallel. 1 1, And integrally fixing the pair of vibrating arms 1 〇, The base 12 on the proximal end side of 1 1 , And the pair is formed on the pair of vibrating arms 10, 11 on the outer surface of the pair of vibrating wrists 10, 11 vibrating the excitation electrode 15 composed of the first excitation electrode 13 and the second excitation electrode 14 And a holder electrode 16 electrically connected to the first excitation electrode 13 and the second excitation electrode 14 17» Again, The piezoelectric vibrating reed 4 of the present embodiment is attached to a pair of vibrating arms 10, On the two main faces of 11 Having along the vibrating wrist 10, The groove portion 18 formed separately in the longitudinal direction of the eleventh. The groove portion 18 is from the vibrating wrist portion 10, The base end side of 11 is formed to the vicinity of the middle. The excitation electrode 15 composed of the first excitation electrode 13 and the second excitation electrode 14 is a pair of vibrating arms 10, An electrode that vibrates at a specific resonant frequency in a direction that is close to or spaced apart from each other, In a pair of vibrating arms 10, 11 outer surface, They are formed by patterning in a state of being electrically separated from each other. in particular, As shown in Figure 7, The first vibrating electrode 13 is mainly formed on the groove portion 18 of one of the vibrating arms 10, And the other side vibrates the two sides of the wrist 11, The second excitation electrode 14 is mainly formed on both side faces of one of the vibrating arms 10 and on the groove portions 18 - 16 to 2010 17942 of the other vibrating arm portion 11. The first excitation electrode 13 and the second excitation electrode 14 are as shown in FIGS. 5 and 6 . On the two main faces of the base 12, Reversing the electrode 19, 20 is electrically connected to the bracket electrode 16, 17. then, The piezoelectric vibrating piece 4 passes through the holder electrode 16 Apply voltage to 1 7 . and, The excitation electrode 15, Bracket electrode 16, 17 and 迂回电 pole 19, 20 series, for example, by chromium (Cr), Nickel (Ni), A film of a conductive film such as aluminum (A1) or φ titanium (Ti) is formed. In a pair of vibrating wrists 10, 11 front, The film is used to perform adjustment (frequency adjustment) of the weight metal film 21 which vibrates its own vibration state within a specific frequency range. and, The weight metal film 21 is divided into a coarse adjustment film 21a used when the frequency is coarsely adjusted. And the fine adjustment film 21b used when it is adjusted to be small. Performing frequency adjustment using the coarse adjustment film 21a and the fine adjustment film 21b, According to this, a pair of vibrating arms 10 can be The frequency limit of 11 is within the nominal frequency of the device. 形成 The piezoelectric vibrating reed 4 is constructed as shown in Figs. 3 and 4, The bump B' of gold or the like is bonded to the upper surface of the base substrate 2 by bumps. More specifically, the return electrode 36 is formed after the pattern is formed on the base substrate 2, On the two bumps b on the 37, Contacting a pair of bracket electrodes 16, respectively In the state of 17, Engaged by bumps. Accordingly, The piezoelectric vibrating reed 4 is supported in a state of being floated from the upper surface of the base substrate 2, And become electrically connected to the bracket electrode 16, 17 and relocate the electrode 36, State of 37. The cover substrate 3 is made of a glass material. For example, -17-201017942 transparent insulating substrate composed of soda lime glass, As shown in Figure 1, As shown in Figures 3 and 4, Form a plate shape. then, Bonding the joint surface side of the base substrate 2, A rectangular recess 3a for accommodating the piezoelectric vibrating reed 4 is formed. The recess 3a overlaps the two substrates 2 3, In order to become a recess 3a for housing the cavity of the cavity C of the piezoelectric vibrating reed 4, then, The lid substrate 3 is in a state in which the concave portion 3a and the base substrate 2 are placed on each other. The susceptor substrate 2 is anodically bonded. The base substrate 2 is the same as the cover substrate 3, Made of glass material, For example, a transparent insulating substrate composed of soda lime glass, As shown in Figures 1 to 4, _ The shape of the cover substrate 3 is overlapped to form a plate shape. On the base substrate 2, One through hole (through hole) 30 is formed through the base substrate 2, 31. at this time, a pair of through holes 30, 31 is formed and housed in the cavity. When explained in more detail, Then, the through hole 30 formed in one side is located on the side of the base portion 12 of the piezoelectric vibrating reed 4 of the holder, The other through hole 31 is located in the vibrating wrist 1〇, 11 before the end side. Furthermore, In this embodiment, Although the through hole 30 penetrating through the base substrate 2 is exemplified, 31 for example, But it is not limited to this, Even a tapered shape which is gradually reduced in diameter toward the lower surface of the base substrate 2 Q is easiest. No matter how, It suffices to penetrate the base substrate 2. then, In the pair of through holes 30, 31 is formed to bury the through hole 30, 31 is formed by one pair of through electrodes 32, 33. The through electrode 32, 33 completely blocks the through hole 30, 31 while maintaining the airtightness in the cavity C, And as an external electrode 38, 39 and the return electrode 36, The task of 37. On the upper surface side of the base substrate 2 (joining the joint surface side of the lid substrate 3) -18 - 201017942, A bonding film 35 for anodic bonding is formed by patterning a conductive material (for example, aluminum), And a pair of circuitous electrodes 36, 37. among them, The bonding film 35 is formed along the periphery of the susceptor substrate 2 so as to surround the recess 3a formed on the lid substrate 3. a pair of circuitous electrodes 36, The 37 series electrically connects a pair of through electrodes 32, 33, One of the electrodes 32 and the holder electrode 16 of one of the piezoelectric vibrating reeds 4 are penetrated. Further, the pattern is electrically connected to the other of the through electrode 33 and the other of the holder electrodes 17 of the piezoelectric motor 4. When explained in more detail, As shown in Figures 2 and 4, The return electrode 36 of one of the electrodes is located just below the base portion 12 of the piezoelectric vibrating reed 4, It is formed directly above one of the through electrodes 32. Furthermore, The other side of the return electrode 37 is from a position adjacent to one of the lead-out electrodes 36. Along the vibrating wrist, 11 and was thrown back to the vibrating wrist 10 After 11 front side, It is formed right above the through electrode 33 on the other side. then, In the pair of routing electrodes 36, a bump B is formed on 37, 压电 The bump B is used to support the piezoelectric vibrating reed 4 . Accordingly, The holder electrode 16 of one of the piezoelectric vibrating reeds 4 is electrically connected to one of the through electrodes 32 via one of the lead-out electrodes 36. Further, the other holder electrode 17 is electrically connected to the other through electrode 33 via the other bypass electrode 37. Below the base substrate 2, As shown in Figure 1, As shown in Figures 3 and 4, Forming a pair of through electrodes 32, 33 externally connected to the external electrode 38, 39. That is, One of the external electrodes 38 is electrically connected to the first excitation electrode 13 of the piezoelectric vibrating reed 4 via one of the through electrodes 32 and one of the return electrodes 36. Furthermore, The other external electrode 39 is electrically connected to the second excitation electrode 14 of the piezoelectric vibrating reed 4 via the other -19-201017942 through electrode 33 and the other routing electrode 37. When the piezoelectric vibrating member 1 thus constructed is operated, Then, the pair of external electrodes 38 formed on the base substrate 2, 39, Apply a specific drive voltage. Accordingly, The current can flow through the excitation electrode 15 composed of the first excitation electrode 13 and the second excitation electrode 14 of the piezoelectric vibrating reed 4, And can be made to the vibrating wrist 10, 11 close, The direction of the spacing is vibrated at a specific frequency. then, The pair of vibrating arms 10 can be utilized. 1 1, As a reference, Use the timing source of the control signal or the reference signal source. then, For the reference to the flowchart shown in Figure 8, A manufacturing method in which a plurality of base wafer wafers 40 and a lid substrate wafer 50 are sequentially formed in a plan view, This will be explained below. First of all, The piezoelectric vibrating reed 4 shown in Figs. 5 to 7 is produced by performing the piezoelectric vibrating piece fabrication process. in particular, First, a crystal of a certain thickness is cut at a specific angle to form a wafer of a certain thickness. then, After roughing the wafer and roughing it, Etching the altered layer by etching, After that, it performs honing processing such as mirror polishing. Become a wafer of a specific thickness. Then, After appropriate processing such as washing the wafer, The wafer is formed by a photolithography technique in a shape pattern other than the piezoelectric vibrating piece 4, And performing film formation and patterning of the metal film, Forming the excitation electrode 15, 迂 electrode 19, 20. Bracket electrode 16, 17, The weight metal film 21 is provided. Accordingly, A plurality of piezoelectric vibrating reeds 4 can be fabricated. After the initial piezoelectric vibrating piece 4, Perform a coarse adjustment of the resonant frequency. By irradiating the coarse adjustment film 21a of the weight metal film 21 with the laser light, Let -20- 201017942 partially evaporate, And the weight is changed and executed. and, For finer adjustments, fine-tuning the resonant frequency, Execute after the bracket. This will be explained later. then, The first wafer fabrication process (S20) of the lid substrate wafer 50 of the lid substrate 3 is performed until the state immediately before the anodic bonding is performed. First of all, After the nano-calcium glass is honed to a predetermined thickness and washed, As shown in Figure 9, Forming a wafer-shaped lid substrate wafer 50» by etching or the like to remove the outermost surface of the work-affected layer, On the joint surface of the wafer 50 for the cover Q plate, The concave portion forming portion of the recess portion 3a for the cavity C is formed in a plurality of rows in the row and column direction by etching or the like (S22). At that time, End the first wafer fabrication project. then, At the same time or before and after the above project, After the completion of the state before the anodic bonding is performed, the second wafer fabrication process of the susceptor substrate wafer 40 of the susceptor substrate 2 is performed (S30). First, after the nano-calcium glass is honed to a certain thickness and washed, A disk-shaped base substrate wafer 40 is formed by removing the outermost process-affected layer by etching or the like (S31). then, As shown in Figure 1, Most of the through-holes 30 are formed in one of the through-wafer substrate wafers 40, The through hole forming process of 31 (S3 2 ). and, The broken line 1 shown in Fig. 1 shows the cutting line cut in the cutting process performed later. at this time, Then, when the two wafers are overlapped, a plurality of through holes 30 are formed in a manner of being housed in the recess 3a formed in the wafer for wafer substrate 50, 31. and, The through hole 30 forming one side is located on the side of the base portion 12 of the piezoelectric vibrating reed 4 of the rear holder, The other through hole 31 is located in the vibrating wrist 10 11 before the end side. -21 - 201017942 Next, Performing a plurality of pairs of through holes 30 formed by burying most of the non-patterned conductors, 31, Most of them form a pair of through electrodes 32, The through electrode of 33 is formed (S33). then, On the top of the base substrate wafer 40, Patterning conductive materials, The bonding film forming process (S34) of forming the bonding film 35 is performed as shown in Figs. 11 and 12, And a plurality of formations are electrically connected to the pair of through electrodes 32, respectively. 33 back to the electrode 36, The winding electrode of 37 is formed (S35). and, The broken line @ Μ in the 11th and 12th drawings indicates the cutting line cut in the cutting process performed later. and, In Figure 12, The pattern of the bonding film 35 is omitted. By performing the project, Then, one of the through electrodes 32 and one of the bypass electrodes 36 are turned on. Further, the other through electrode 33 and the other bypass electrode 37 are electrically connected. At that time, End the second wafer fabrication project. however, In Figure 8, After the bonding film formation process (S 34), Although the engineering sequence for performing the electrode forming process (S35), But φ is even the opposite, After the back electrode formation project (S3 5), The bonding film forming process (S 34) can also be performed, Even if you perform two projects at the same time. Even if any of the engineering order, It can also achieve the same effect. Accordingly, It is also possible to change the order of the engineering as needed. then, A plurality of piezoelectric vibrating reeds 4 fabricated are respectively passed through the lead-out electrode 36, 37, the bump is bonded to the upper surface of the base substrate wafer 40 (S40). First of all, In a pair of routing electrodes 36, On the 37, a bump of gold or the like is formed, respectively. then, After the base 12 of the piezoelectric vibrating reed 4 is placed on the bump B, -22-201017942 is placed on the bump B. Heating the bump B to a specific temperature on one side, The piezoelectric vibrating reed 4 is pressed against the bump B on one side. Accordingly, The piezoelectric vibrating piece 4 is mechanically supported by the bump B, And become electrically connected to the bracket electrode 16, 17 and the return electrode 36, State of 37. Accordingly, At that time, One of the piezoelectric vibrating reeds 4 pairs the excitation electrodes 15 with a pair of through electrodes 32, 33 Status of conduction. especially, Since the piezoelectric vibrating reed 4 is joined by bumps, Therefore, it is supported in a state of being floated from the upper surface of the base substrate wafer 40. 0 After the holder of the piezoelectric vibrating piece 4 is finished, The superimposing process of superposing the lid substrate wafer 50 on the base substrate wafer 40 is performed (S50). in particular, Using a non-graphic benchmark mark as an indicator, Two wafers 40, 50 Align the correct position. Accordingly, The piezoelectric vibrating reed 4 to be mounted is housed in a recess 3a and two wafers 40 formed on the base substrate wafer 40, The state within the cavity C surrounded by 50. After the overlap project, Executing two wafers 40 that will overlap, 50 is placed into the anodic bonding device without a picture, The bonding process is performed by applying a specific voltage to a specific temperature environment and performing anodic bonding (S60). in particular, A specific voltage is applied between the bonding film 35 and the lid substrate wafer 50. So, An electrochemical reaction occurs between the bonding film 35 and the interface of the lid substrate wafer 50, The two are each joined tightly to be anodically bonded. Accordingly, The piezoelectric vibrating piece 4 can be sealed in the cavity C, The wafer body 60 shown in Fig. 13 of the wafer 40 for bonding the base substrate and the wafer 50 for the lid substrate can be obtained. and, In Figure 13, In order to easily view the picture, Denote the state of the wafer body 60, The pattern of the bonding film 35 is omitted from the base substrate wafer 40. and, The broken line shown in Fig. 13 indicates the cutting line cut off in the cutting operation of the line -23-201017942. however, When performing anodic bonding, The through hole 30 formed in the wafer 40 for the base substrate, 31 because of the through electrode 32, 33 is completely blocked, Therefore, the airtightness in the cavity C passes through the through hole 30, 31 without damage. then, After the above anodic bonding is completed, Below the wafer 40 for the base substrate, Patterning conductive materials, And performing the majority formation is electrically connected to the plurality of pairs of through electrodes 32, One of the pair of external electrodes 38, The external electrode of 39 is formed. With the project, Can use external electrodes @ 38, 39 operates the piezoelectric vibrating reed 4 sealed in the cavity C. then, In the state of the wafer body 60, The fine adjustment works (S80) in which the frequency of each of the piezoelectric vibrators 1 sealed in the cavity C is finely adjusted to be within a specific range are performed. When specified, For the external electrode 38, 39 The piezoelectric vibrating reed 4 is vibrated by applying a voltage. then, The laser beam is irradiated from the outside through the wafer 50 for the cover substrate while measuring the frequency. The fine adjustment film 21b of the weight metal film 21 is evaporated. Accordingly, Because of a pair of vibrating wrists 10, 11 before the end side of the weight change, Therefore, the frequency of the piezoelectric vibrating reed 4 can be adjusted to be within a specific range of the nominal frequency. After the fine tuning of the frequency, The cutting of the bonded wafer body 60 along the cutting line shown in Fig. 13 is performed to cause the cutting process to be a small piece (S90). the result, The surface mount type piezoelectric vibrator shown in Fig. 1 in which the piezoelectric vibrating reed 4 is sealed in the cavity C formed between the base substrate 2 and the lid substrate 3 joined to each other by the anode can be produced at a time. and, After performing the cutting process (S 90) and cutting into small pieces to become the respective piezoelectric vibrating members 1, Even for the execution of the fine-tuning project (S80), the project can be used in the order of -24-201017942. but, As above, By performing the fine-tuning project first (S8〇), The fine adjustment can be performed in the state of the wafer body 60, so that the majority of the piezoelectric vibrating members 1 can be finely adjusted. Therefore, it is better because it can increase production. after that, The internal electrical characteristics are executed (S100). That is, Measuring the resonance frequency of the piezoelectric vibrating piece 4 'resonance resistance 値, The driving level characteristic (resonance frequency and resonance power dependence of the resonance resistance 値) is confirmed. Again φ, Confirm the insulation resistance characteristics together. Then 'finally performing the visual inspection of the piezoelectric vibrating member 1, Finally confirm the size or quality. In accordance with this, the manufacture of the piezoelectric vibration element 1 is completed. especially, The piezoelectric vibrating member 1 of the present embodiment is different from the conventional three-layer structure. Since the two-layer structure of the base substrate 2 and the lid substrate 3 is bonded, Therefore, only the conventional piezoelectric substrate portion can make the entire thickness thin. therefore, Thinner than ever before, It can be miniaturized. and, As described above, the piezoelectric vibrating reed 4 is supported by the bump bonding in a state of being floated from the base substrate 2, Therefore, the minimum vibration interval required for vibration can be naturally ensured. Accordingly, Different from the cover substrate 3, It is not necessary to form the recess 3a for the cavity C on the side of the base substrate 2, Even a flat substrate can be used. Therefore, 'the part of the recess 3a is not considered, The thickness of the base substrate 2 can be made as small as possible. Even at this point, the piezoelectric vibrator 1 can be made thinner. Furthermore, According to the manufacturing method of the present embodiment, Since the above-described piezoelectric vibrating member 1 which is thinned can be manufactured at a time, Therefore, it is possible to reduce costs. Furthermore, Bonding the piezoelectric vibrating reed 4 by bumps, Compared with the general solder -25- 201017942, the following advantages can be obtained. That is, When the bumps are joined, The C1 characteristics can be reduced, although the C0 characteristics are almost the same as when solder bonding. Here, 'for C0, C1 is briefly explained. C0 is the parallel capacitance 'in the equivalent circuit of the vibrating member shown in Fig. 14' which is actually a measurable number 値. In addition, 'C1 is the series capacitor in the equivalent circuit shown in Fig. 14, The number obtained by the calculation formula shown in Fig. 15 is calculated. and, at this time, Δ f in the calculation formula CO, CL, Fr is a measurable number 分别. _ here, The piezoelectric vibrating piece of the piezoelectric vibrating piece 4 is bonded by soldering, In the piezoelectric vibrating member of the above-described embodiment in which the piezoelectric vibrating reed 4 is bonded to the bump, Will actually measure the number of C0, And the number of C1 is calculated and shown in Fig. 16. and, The two piezoelectric vibrating members differ only in solder bonding or bump bonding. Other conditions are the same. the result, As shown in Figure 16, When it is confirmed that the bump is bonded to the solder, C1 features are low. This should be caused by the state of the holder of the piezoelectric vibrating reed 4 . That is, At the time of solder bonding, Piezoelectric vibration @片4 is supported by the holder in the state of contact with the solder surface. In addition, At the time of solder bonding, The piezoelectric vibrating reed 4 is supported by the holder in a state in which the bump B is in close contact with the point. therefore, The piezoelectric vibrating piece floats in a state of less contact, It is conceivable that the C1 characteristics become lower. then, It is confirmed that the C1 characteristic is lowered due to the bump bonding. Therefore, the capacity ratio (co/ci) r is larger than when the solder is bonded. Generally, when the capacity ratio r becomes larger, Can achieve low cl (capacitive load), And can be linked to low power consumption. therefore, When the bumps are joined, When compared to solder bonding -26- 201017942, The effect of manufacturing a piezoelectric vibrating member that saves electricity can be achieved. Furthermore, Capacitance fee T is the CL curve shown in Figure 17 (horizontal axis: CL, The characteristic of the curve of the vertical axis Af/f), The larger the faster, the faster the curve is close to the horizontal. That is, The CL curve (L1) indicated by a solid line becomes a CL curve (L2) indicated by a broken line. Therefore 'in the range of Af/f determined in advance (for example, Within ±20ppm), Easy to fall into the CL curve, It is also possible to achieve an easy-to-manufacture effect. φ Next, For one implementation of the oscillator of the present invention, Referring to Figure 18 on one side, One side will explain. The oscillator 1 of this embodiment is as shown in Fig. 18, The piezoelectric vibrating member 1 is constructed as an oscillating member electrically connected to the integrated circuit 101. The oscillator 100 is provided with a substrate 103 on which an electronic component 102 such as a capacitor is mounted. The above-described integrated circuit 101 for an oscillator is mounted on the substrate 103, The piezoelectric vibration piece 4 of the piezoelectric vibrator 1 is mounted in the vicinity of the integrated circuit 101. The electronic components 102, The integrated circuit 101 and the piezoelectric vibrating element 1 are electrically connected by a wiring pattern having no pattern. and, Each of the constituent parts is molded by a resin having no pattern. In the oscillator 100 thus constructed, When a voltage is applied to the piezoelectric vibrating member 1, The pressure piece 4 of the piezoelectric vibrating member 1 vibrates. This vibration is converted into an electrical signal by the piezoelectric characteristics of the piezoelectric vibrating reed 4, The electric signal is input to the integrated circuit 101. The input electrical signal is subjected to various processes by the integrated circuit 101, It is output as a frequency signal. Accordingly, The piezoelectric vibrating member 1 functions as a vibrating member. Again. The integrated circuit 101 is configured by adding a single-function oscillator for clocks, such as an RTC (Real Time Clock) module, etc., by selectively setting -27-201017942 as required. It is also possible to additionally control the machine or action day or time. Or control functions such as time or calendar. As above, According to the oscillator 100 of this embodiment mode, The piezoelectric vibrating member 1 having a smaller size than the conventional one, Therefore, the oscillator 100 itself can also be miniaturized. It can correspond to the need for more miniaturization in the future. Other than that, It is possible to obtain high-precision frequency signals that have been stabilized for a long time. Θ Next, For an implementation form of an electronic device according to the present invention, This will be explained with reference to Fig. 19. and, The electronic device is described by taking the portable information device 110 having the above-described piezoelectric vibrating member 1 as an example. First, The portable information machine 110 of this embodiment is represented by, for example, a mobile phone. For development, Improve the watch in the advance technology. Looks like a watch, The equivalent of the dial is equipped with a liquid crystal display. You can display the current time and so on on this screen. Furthermore, When used as a communication device, Removed from the wrist, And by means of a loudspeaker and a microphone embedded in the inner part of the strap. Executable 0 Same communication as the mobile phone of the prior art. but, Compared to previous mobile phones, Significantly miniaturized and lightweight. Next, the configuration of the portable information device 110 of the present invention will be described. The portable information machine 110 is as shown in FIG. A piezoelectric vibrating member 1 and a power supply unit 111 for supplying electric power are provided. The power supply unit 111 is composed of, for example, a lithium secondary battery. The power supply unit 111 is connected in parallel to the control unit 1 1 2 that performs various types of control, a timing unit 1 1 3 ' that counts the execution time or the like, and a communication unit 114 that performs external communication, And display various information -28- 201017942 display section 115, And a voltage detecting unit 116 that detects the voltage of each functional unit. Then 'by the power supply unit 111, Power is supplied to each functional unit. The control unit 1 1 2 controls each functional unit to perform transmission and reception of voice data, Now the measurement or display of the moment, etc. Furthermore, The control unit 112 is provided with a ROM in which a program is written in advance. And a CPU that is executed by reading a program written in the ROM, And RAM used as the working area of the CPU. Φ The timing unit 113 is provided with a built-in oscillation circuit, Register circuit, An integrated circuit such as a counter circuit and an interface circuit, And piezoelectric vibrating member 1. When a voltage is applied to the piezoelectric vibrating member 1, The piezoelectric vibrating piece 4 vibrates, The vibration is transformed into a telecommunication signal by the piezoelectric characteristics of the crystal. It is input to the vibration circuit as a signal. The output of the oscillating circuit is dimmed, It is counted by the scratchpad circuit and the counter circuit. then, Through the interface circuit, The execution control unit 112 sends a reception signal, The current time or the current calendar information or the like is displayed on the display unit 115. The G communication unit 114 is provided with a wireless unit 117 having the same function as that of the conventional mobile phone. The sound processing unit 118, Switching unit 119, Amplifying part 120, Sound input/output unit 121, Telephone number input section, The ringtone generating unit 123 and the call control memory unit 124. The radio unit 117 performs processing for transmitting and receiving with the base station via the antenna 125 by using various data such as voice data. The sound processing unit 118 encodes or decodes the audio signal input from the wireless unit 117 or the amplifying unit 120. The amplifying unit 120 amplifies the signal input from the sound processing unit 118 or the sound input/output unit 121 to a specific level. Sound input and output unit -29- 201017942 121 is composed of a loudspeaker or a microphone. Amplified ringtone or call sound, Or concentrate on the sound. Furthermore, The incoming call ring generating unit 123 generates an incoming call ringtone in response to a call from the base station. The switching unit 119 is only when an incoming call is made. By switching the amplifying portion 1 2 0 connected to the sound processing unit 118 to the incoming call ring generating unit 123, The ringtone generated by the incoming call ring generating unit 123 is output to the sound input/output unit 121 via the amplifying unit 120. and, The call control storage unit 1 24 stores the program involved in the two-way call control of the communication. Furthermore, The telephone number input unit 122 is provided with a number key and other keys such as from 〇 to 9. By pressing the number keys, etc. Enter the contact's phone number, etc. The voltage detecting unit 1 16 is a voltage applied to each functional unit such as the control unit 1 1 2 by the power supply unit 1 1 1 . Below a certain threshold, The voltage drop is detected and notified to the control unit 112. The specific voltage 此时 at this time is taken as the minimum voltage required for the communication unit 114 to operate stably, and is set first. For example, around 3 V. The control unit 112 that has received the notification of the voltage drop from the voltage detecting unit 1 16 prohibits the wireless unit 117, The sound processing unit 118, The switching unit 119 and the operation of the ringtone generating unit 123. especially, The operation of the wireless unit 117 that consumes a large amount of power must be stopped. and, At the display unit 115, The display communication unit 114 cannot be used because the battery remaining amount is insufficient. That is, The voltage detecting unit 1 16 and the control unit 1 1 2 can be used. The operation of the communication unit 114 is prohibited, and the purpose is displayed on the display unit 115. Even if the display is a text message, even as an intuitive display. In the phone icon displayed above the display surface of the display unit 115 of -30-201017942, The mark 叉 (cross mark) can also be marked. and, A power supply blocking unit 126 having a power supply capable of selectively blocking a part of the function of the communication unit 114, Accordingly, the function of the communication unit 1 14 can be more reliably stopped. As above, According to this embodiment, when carrying the information machine 110, The piezoelectric vibrating member 1 having a smaller size than the conventional one is provided, Therefore, the oscillation φ device 1 〇〇 itself can also be miniaturized. It can correspond to the need for smaller size in the future. Other than that, It can display high-precision clock information that is stable over a long period of time. then, For the radio wave clock according to the present invention, This will be explained with reference to Fig. 20. The radio wave clock 130 of this embodiment is as shown in Fig. 20, A piezoelectric vibrating member 1 electrically connected to the filter 131 is provided, In order to receive standard radio waves containing clock information, A clock that automatically corrects the function to the correct time and displays it as φ. In Japan, In Fukushima Prefecture (40kHz) and Saga Prefecture (60kHz), Have a sending office (sending office) that sends standard radio waves, Each standard wave is sent. Long wave like 40kHz or 60kHz, Because of the nature of the spread of the earth's surface, And the nature of the reflection of the ionosphere and the surface of the surface, Therefore, the scope of communication is wide. The above two communication offices are used throughout Japan. the following, The functional configuration of the radio wave clock 130 will be described in detail. 天线 The antenna 132 receives a standard wave of a long wave of 40 kHz or 60 kHz -31 - 201017942. The standard wave system of the long wave will be called the time code information. The AM wave is applied to the carrier wave of 40 kHz or 60 kHz. The standard wave of the received long wave is amplified by the amplifier 133. Filtered by the filter unit 131 having a plurality of piezoelectric vibrators 1 Tuning. The piezoelectric vibrating members 1 of the present embodiment are respectively provided with a crystal vibrating member portion 138, 139, The crystal vibrating part 138, The 139 has the same resonant frequency of 40 kHz and 60 kHz as the above-mentioned handling frequency. and, The signal of the particular frequency being filtered is detected by Rectification _
W 路134而被檢波解調。接著，經波形整型電路135取出時 間碼，藉由CPU136計數。在CPU136中，讀取現在之年 、積算日、星期、時刻等之資訊。被讀取之資訊反映在 RTC137，顯示正確之時刻資訊。 搬運波由於爲40kHz或60kHz，故水晶振動部138、 139以持有上述音叉型之構造的振動件爲佳。 並且，上述說明爲表示日本國內之例，長波之標準電 波之頻率在海外則爲不同。例如，在德國係使用77.5kHz Q 之標準電波。因此，於將即使在海外亦可對應之電波時鐘 130組入於攜帶機器之時，又必須要有與在日本之時不同 頻率之壓電振動件1。 如上述般，若依據本實施型態之電波時鐘130時’因 具備有比以往更薄之小型化的壓電振動件1 ’故電波時鐘 本身也同樣可以謀求小型化’可以對應於今後更小型化之 需求。除此之外，可以長期上安定高精度地計數時刻。 並且，本發明之技術範圍並不限定於上述實施型態’ -32- 201017942 只要在不脫離本發明之主旨的範圍內，可作各種變更。 例如’在上述實施型態中，作爲壓電振動片4之一例 雖然舉出在振動腕部10、11之兩面形成溝部18之具有溝 的壓電振動片爲例而予以說明，但是即使爲不具有溝部18 之類型的壓電振動片亦可。但是，藉由形成溝部18，當對 一對勵振電極15施加特定電壓之時，因可以提高一對勵 振電極1 5間之電場效率，故可以更抑制振動損失而更提 φ 高振動特性。即是，可以更降低 CI値（Crystal Impedance)，以謀求壓電振動片4之更高性能化。在該 點中，以形成溝部1 8爲佳。 再者，在上述實施中，雖然舉出音叉型之壓電振動片 4爲例予以說明，但並不限定於音叉型。例如，即使爲厚 度切變振動片亦可。 再者，在上述各實施型態中，雖然凸塊接合壓電振動 片4，但是並不限定於凸塊接合。 φ 再者，雖然舉出陽極接合基座基板2和蓋基板3之情 形爲例予以說明，但是接合方法並不限定於陽極接合。例 如，即使利用金錫焊料，接合基座基板2和蓋基板3亦可 。此時，於接合工程之時，若藉由金錫焊料接合基座基板 用晶圓40和蓋基板用晶圓50即可。 再者，在上述實施型態中，雖然說明於執行在蓋基板 用晶圓150形成空腔用之凹部3a的凹部形成工程之時， 藉由蝕刻等形成，但是即使不施予如此之切削加工而形成 凹部3 a亦可。例如，即使藉由網版印刷玻璃之塗料而形 -33- 201017942 成凹部3a亦可。此時，如第21圖所示般，於凹部形成工 程S22之時，若執行印刷工程S22a，和乾燥工程S22b， 和燒結工程S22c即可。針對該些各工程予以詳細說明。 首先，如第22圖所示般，在晶圓固定板70上載置洗 淨等結束之蓋基板用晶圓50，並且以固定治具51固定周 圍。然後，在被固定之蓋基板基板用晶圓50表面定置成 爲網版之印刷遮罩。該印刷遮罩52爲被配置成覆蓋之後 成爲凹部3a之區域的遮罩，厚度爲50//m至200/zm左 右。 接著，如第23圖所示般，對蓋基板用晶圓50之表面 供給成爲印刷油墨之玻璃的塗料P 1之後，使塗刷器53移 動而一面加壓塗料P1 —面使全體延長。依此，塗料P1因 被推壓出無不被遮罩之區域，故被網版印刷在不被遮罩之 蓋基板用晶圓50上。即是，可以在圖案製造成包圍成爲 凹部3a之部分之周圍之狀態下，網版印刷玻璃之塗料P1 。依此，結束印刷工程S22a。並且，一次被印刷之塗料 P1之厚度成爲與印刷遮罩52之厚度相同。 接著，執行使所印刷之玻璃的塗料P1乾燥之乾燥工 程S22b。例如，每晶圓固定板70放入爐中，以1〇〇 °C前 後之溫度乾燥30分鐘左右。依此，成爲先前印刷之玻璃 的塗料P1乾燥之狀態。 然後，再次執行上述印刷工程S22a，在乾燥之塗料 P1上網版印刷新的玻璃之塗料而重複塗裝。之後’再次 藉由乾燥工程S22b使新的塗料P1乾燥。 201017942 然後，如第24圖及第25圖所示般’多次重複執行印 刷工程S22a和乾燥工程S22b ’直至藉由塗料P1之重複 塗裝而形成凹部3a爲止。並且，在第24圖及第25圖中 ，表示3次執行印刷工程S22a及乾燥工程S22b，而行程 凹部3a之情形。即是，重複塗裝之塗料P1全體之高度係 印刷遮罩52之厚度爲50"m之時’爲150/zm。然後’該 150;/m成爲凹部3a之深度。 φ 然後，於藉由塗料P1之重複塗裝而形成凹部3a之後 ，執行燒結重複塗裝而乾燥之塗料P1並使硬化之燒結工 程S22C。依此，重複塗裝之塗料P1和蓋基板用晶圓50 成爲一體。 其結果，不用施予蝕刻等之切削加工，可以在蓋基板 用晶圓50形成凹部3a。尤其，因不需要切削蓋基板用晶 圓50，故可以減輕賦予晶圓50之負荷，並可以連繫於壓 電振動件1之晶質向上化。並且，印刷遮罩5 0之厚度或 φ 印刷次數及使自由設定亦可。 再者，在上述實施型態中，於在基座基板用晶圓40 形成通孔之時，即使藉由機械性鑽頭加工形成，或藉由雷 射加工形成，或藉由噴砂加工形成亦可。此時，於形成直 線通孔之時，若採用鑽頭加工及雷射壓加工即可，於形成 錐形狀之通孔之時，若採用噴砂加工即可。 尤其’作爲簡便並且確實通孔形成通孔之方法，以藉 由模具之加壓所形成之方法爲佳。此時，如第26圖所示 般，於貫通孔形成工程S32之時，若執行定置工程S32a -35- 201017942 ，和加壓工程S32b，和冷卻工程32c即可。針對各工程予 以詳細說明。 首先，如第27圖所示般’執行將結束洗淨等之基座 基板用晶圓40定置在朝下模具80和具有朝下模具突出之 插銷81a之上模具81之間之定置工程32a。並且’該插銷 81a被形成朝向前端直徑漸漸縮徑之錐形狀。再者’在上 模具81另外安裝有與插銷81a不同的進入至被設置在下 模具80之定位孔80a內之定位插銷81b。再者，於執行定 置工程32a之前，打開定位銷81b插通於基座基板用晶圓 40之插通孔40a，該插通孔40a則定置成與定位孔80a對 向。 接著，執行將全體放入至爐中而將基座基板晶圓40 加熱至特定溫度（玻璃軟化點以上之溫度），並且如第28 圖所示般，藉由下模具80和下模具81加壓，利用上模具 81之插銷81a在基座基板用晶圓40形成通孔之加壓工程 3 2b。此時，上模具81之定位用插銷81a插通基座基板用 晶圓40之插通孔40a，並且進入至下模具80之定位孔 8 0a。因此，因下模具80和上模具81和基座基板用晶圓 40分別被確實定位，故可以在所欲之位置高精度形成通孔 。然後，最後執行使上述基座基板用晶圓40冷卻固化之 冷卻工程32c。依此，結束貫通孔形成工程S32。 尤其，因可以僅藉由模具加壓之簡便方法一次形成通 孔，故可以提高製造效率。而且，可以形成錐形狀之通孔 -36- 201017942 然而，於以加壓模具來形成通孔之時，則如 用俯視呈圓形狀之晶圓40爲佳。即是，於基座 圓40爲圓形狀之時，即使因加壓工程32b之加 卻工程32c之冷卻，而在晶圓產生膨脹、收縮， 難變形，可將尺寸精度、厚度精度維持在高水準 假設，於俯視呈矩形狀（例如俯視呈長方形 圓之時，由於加熱、冷卻而產生膨脹、收縮之時 φ 有形狀變形之虞，尺寸精度、厚度精度則降低。 在晶圓存在角部，於膨脹時在角部附近容易集中 。因此，可想膨脹程度和收縮程度不均勻，難以 之狀態。再者，於利用俯視呈矩形狀之晶圓之時 寸精度、厚度精度變低，由於受到膨脹程度和收 均勻的影響，導致過度負荷作用於插銷81a，插| 有可能變形或彎折。 但是，因利用無角部之圓形狀晶圓，故即使 ® 加熱、冷卻之加壓加工形成貫通孔，產生上述問 性小。並且，於冷卻工程32c之後，即使硏磨基 圓40之兩面亦可。如此一來，可以實現更確實之 再者，在上述實施型態中，於迂迴電極36、 成凸塊B之前，對迂迴電極36、37照射電漿（ 電漿）10秒以上而施予電漿洗淨處理爲佳。依此 去塵埃等之污染源，使形成凸塊B之面成爲乾淨 可以改質表面。尤其，因至少照射1 〇秒電漿， 留污染源可以確實除去。依此，可以提高與凸塊 上述般使 基板用晶 熱，因冷 在途中也 〇 狀）之晶 ，則途中 該係因爲 內部應力 回到原來 ，不僅尺 縮程度不 肖81a則 藉由伴隨 題之可能 座基板晶 貫通。 37上形 例如，氧 ，可以除 ，並且也 故不會殘 B之密接 -37- 201017942 性、接合性，並可以提高凸塊B之剪斷剝離強度。因此’ 可以提高壓電振動片4之支架性能’其結果可以謀求壓電 振動件1之高品質化。 在此，於第29圖表示在不施予電漿洗淨處理而形成 凸塊B之時，和於施予電漿洗淨處理之後形成凸塊B之時 ，對凸塊B實際施予擦痕試驗的結果。 並且，於施予電漿洗淨處理之時的試驗’係以照射10 秒電漿之時和照射30秒電漿之時的兩種方式進行試驗。 φ 再者，擦痕試驗在任一情形下皆執行次。再者’作爲 凸塊B擦痕強度，即是剪斷強度，於不形成電漿洗淨處理 之時以平均55 (gf)進行試驗，於1〇秒照射電漿之時以 平均78 ( gf)進行試驗，於30秒照射電漿之時以平均83 (gf)進行試驗。 再者，斷裂模式A係表示擦痕試驗結果’不除去凸塊 B，以幾乎完整之狀態殘留的情形。斷裂模式B係表示擦 痕試驗結果，雖然若干除去凸塊B，但殘留大部分的情形 @ 。斷裂模式C係表示擦痕試驗結果，凸塊B之大部分被除 去，若干殘留一部份的情形。斷裂模式D係表示擦痕試驗 結果，凸塊B完全被除去的情形。 如第29圖所示般，首先，對藉由不執行電漿洗淨處 理而所形成之凸塊B進行擦痕試驗之結果，85 %爲斷裂模 式C，關於斷裂模式A爲0%。對此，對於施予電漿洗淨 處理之後所形成之凸塊B進行擦痕試驗之結果，即使電漿 之照射時間爲10秒、30秒中之任一者時，100%爲斷裂模 •38- 201017942 式A。而且，不管擦痕強度（剪斷強度）大，所有爲斷裂 模式A之狀態。 如此一來，於施予電漿洗淨處理之後，藉由形成凸塊 B，實際確認到凸塊B之剪斷剝離強度變高之情形。再者 ，藉由至少照射10秒電漿，可確認出能夠發揮充分之效 果。 再者，於上述實施型態中，以形成凸塊B之前，在基 φ 座基板用晶圓40之上面施予表面加工，而執行將算術平 均粗度（Ra )設爲1 Onm以下的表面加工工程爲佳。作爲 表面加工之方法，有例如拋光等之鏡面硏磨，或藉由滑移 所施行的表面硏削等。無論係那一種方法，皆可以使成爲 藉由表面加工形成凸塊B之基底的基座基板用晶圓40之 上面儘可能接近平滑之面。因此，仍然可以提高與凸塊B 之密接性、接合性，並可以提高凸塊B之剪斷剝離強度。 依此，即使該方法，亦可以提高壓電振動片4之支架性能 〇 ，其結果可以謀求壓電振動件1之高品質化。 尤其，藉由組合該方法和上述電漿洗淨處理，可以更 提高效果，爲較佳。 再者，在上述實施型態中，藉由以無圖示導電體掩埋 通孔30、31形成貫通電極32、33，但是即使將含有第30 圖所示之多數金屬微粒子P2之塗料P3埋在通孔30、31 ，並使塗料P3硬化，依此如第31圖所示般，當作貫通電 極85、86亦可。此時，貫通電極85、86，與塗料P3中 所含有的多數金屬微粒子P2互相接觸，依此確保電導性 -39- 201017942 。因此，可以確實當作電極發揮功能。 在此，於利用塗料P3形成貫通電極85、80之時’若 如下述般執行貫通電極形成工程S3 3即司* ° 首先，執行在通孔30、31內無間隙地埋入含有金屬 微粒子P2而阻塞通孔30、31之塡充工程。接著’執行以 特定溫度燒結所塡充之塗料P3而使硬化之燒結工程。依 此，成爲塗料P3在通孔30、31之內面緊密固定之狀態。 然而，硬化之塗料P3因於燒結時無圖示之塗料P3內之有 機物蒸發，故比起塡充工程時體積減少。因此，在塗料 P3表面，不管怎樣產生了凹陷。 在此，於燒結後，執行僅以特定厚度分別硏磨基座基 板用晶圓40之兩面的硏磨工程。藉由執行該工程，因也 可以同時硏磨藉由燒結而硬化之塗料P3之兩面，故可以 削除凹陷之部分的周圍。即是，可以使塗料P3表面成爲 平坦。依此，可以使基座基板用晶圓40之表面，和貫通 電極85、86之表面成爲幾乎相同面之狀態。藉由執行該 硏磨工程，結束貫通電極形成工程。 其結果，可利用塗料P3形成貫通電極85、86。並且 ，在第31圖中，舉出以被形成錐形狀之通孔30、31之情 形爲例。此時，於形成通孔30、31之時，若藉由噴砂法 或依據上述模具的加壓而形成即可。 再者’在利用塗料P3形成貫通電極之時，即使如第 32圖所示般，藉由使含有多數玻璃珠〇Β之塗料P3硬化 ，依此形成貫通電極87、88亦可。此時，因僅玻璃珠 201017942 之部分可以減少塗料P3之量，故可以減少藉由燒結而減 少之有機物之量。依此，可以將塗料P3硬化後所出現之 表面凹陷縮小成幾乎可以忽視之程度。因此，具有可以去 除硏磨工程之優點。 再者，就以貫通電極之另一例而言，即使如第33圖 所示般，藉由被埋入通孔30、31內之筒體91，和被插入 至筒體91之中心孔91a，藉由燒結一體性被固定之導電性 ❹ 的芯體92構成貫通電極89、90亦可。並且，即使在第33 圖中，也舉出被形成錐形狀之通孔30、31之情形爲例。 此時之貫通電極形成工程若如下述般進行即可。 首先，執行在通孔30、31內掩埋筒體91，並且在筒 體91之中心孔91a插入芯材92之定置工程。並且，筒體 91係如第34圖所示般，使用藉由與基座基板2相同之玻 璃材料被事先暫時燒結，兩端平坦且被形成與基座基板2 大略相同厚度之圓筒狀者》而且，在中心形成貫通筒體91 ® 之中心孔91a，使用外型配合通孔30、31而被形成圓錐形 狀（剖面錐形狀）者。另外，芯材92係如第33圖所示般 ，爲藉由金屬材料被形成圓柱狀之導電性芯材，與筒體91 相同使用被形成與基座基板2大略相同之厚度者。 然後，於結束定置工程之後，執行將埋入之筒體91 以特定溫度予以燒結之燒結工程。依此，可以一體性固定 通孔30、31和筒體91和芯材92。依此，可以形成貫通電 極89、90，結束貫通電極形成工程。 尤其，因不係塗料P3而係利用玻璃筒體91，故於燒 -41 - 201017942 結後筒體91之體積難以減少，在表面難以產生凹陷。因 此’不執行硏磨工程，仍然可以形成貫通電極89、90。 【圖式簡單說明】 第1圖爲表示本發明之一實施型態之圖式，爲壓電振 動件之外觀斜視圖。 第2圖爲第1圖所示之壓電振動件之內部構成圖，在 取下蓋基板從上方觀看壓電振動片之圖式。 第3圖爲沿著第2圖所示之A-A線之壓電振動件之剖 面圖。 第4圖爲第1圖所示之壓電振動件之分解斜視圖。 第5圖爲構成第1圖所示之壓電振動件之壓電振動片 之上視圖。 第6圖爲第5圖所示之壓電振動件之下視圖。 第7圖爲第5圖所示之剖面B-B向視圖。 第8圖爲製造第1圖所示之壓電振動件之時之流程的 流程圖。 第9圖爲表示沿著第8圖所示之流程圖而製造壓電振 動件之時之一工程的圖式，爲在成爲蓋基板之根源的蓋基 板用晶圓形成多數凹部之狀態的圖式。 第10圖爲表示沿著第8圖所示之流程圖而製造壓電 振動件之時之一工程的圖式，爲在成爲蓋基板之根源的蓋 基板用晶圓形成多數凹部之狀態的圖式。 第11圖爲表示第10圖所示之狀態之後，在一對通孔 -42- 201017942 內形成貫通電極，並且在基座基板晶圓之上面圖案製作迂 迴電極之狀態的圖式。 第12圖爲第11圖所示之狀態之基座基板用晶圓之全 體圖。 第13圖爲表示沿著第8圖所示之流程圖而製造壓電 振動件之時之一工程的圖式，爲在將壓電振動片收容在空 腔內之狀態下陽極接合基座基板用晶圓和蓋基板用晶圓之 φ 晶圓體之分解斜視圖。 第14圖爲表示壓電振動件之等效電路之圖式。 第15圖爲表示算出第14圖所示之串聯電容之圖式。 第16圖係表示在藉由銲錫接合支架壓電振動片之時 ，和藉由凸塊接合支架壓電振動片之時，比較C1和CO之 結果。 第17圖爲表示CL曲線之圖式。 第18圖爲表示本發明所涉及之一實施型態之圖式， φ 爲振盪器之構成圖。 第19圖爲表示本發明所涉及之一實施型態之圖式， 爲電子機器之構成圖。 第20圖爲表示本發明所涉及之一實施型態之圖式， 爲電波時鐘之構成圖。 第21圖爲表示製造本發明所涉及之壓電振動件之時 之變形例的圖式，藉由網版印刷塗料，形成空腔用之凹部 之時的流程圖。 第22圖爲表示沿著第21圖所示之流程圖而形成凹部 -43- 201017942 之時的工程圖之圖式，爲在晶圓固定板上固定蓋基板用晶 圓之後，定置印刷遮罩之狀態的圖式。 第23圖爲由第22圖所示之狀態網版印刷塗料之狀態 的圖式。 第24圖爲由第23圖所示之狀態重複執行網版印刷和 乾燥，而形成凹部之狀態的圖式。 第25圖爲第24圖所示之剖面C-C向視圖。 第26圖爲表示製造本發明所涉及之壓電振動件之時 之變形例的圖式，藉由加壓模具，在基座基板用晶圓形成 貫通孔之時的流程圖。 第27圖爲表示沿著第26圖所示之流程圖而形成貫通 孔之時的工程圖之圖式，爲在下模具和上模具之間定置基 座基板用晶圓之狀態的圖式。 第28圖爲表示第27圖所示之狀態之後，以下模具和 上模具加壓基座基板用晶圓之狀態的圖式。 第29圖爲製造本發明所涉及之壓電振動件之時，不 施予電漿洗淨處理而形成凸塊之時，和於施予之後形成凸 塊之時，執行凸塊之擦痕試驗之結果的圖式。 第30圖爲含有金屬微粒子之塗料之放大圖。 第31圖爲表示本發明所涉及之壓電振動件之變形例 的圖式，爲表示利用第30圖所示之塗料而形成貫通電極 之時之壓電振動件之圖式。 第3 2圖爲表示本發明所涉及之壓電振動件之變形例 的圖式，爲表示利用第30圖所示之塗料而形成貫通電極 -44- 201017942 之時之壓電振動件之圖式。 第33圖爲表示本發明所涉及之壓電振動件之另外變 形例的圖式，爲表示藉由燒結玻璃之筒體和導電性之芯材 而形成貫通電極之時之壓電振動件之圖式。 第34圖爲第33圖所示之筒體之斜視圖。 第35圖爲表示以往之3層構造型之壓電振動件之一 例的剖面圖。 【主要元件符號說明】 B :凸塊 C :空腔 P 1 :塗料 1 :壓電振動件 2 :基座基板 3 :蓋基板 3a :空腔用之凹部 4 :壓電振動片 3 〇、3 1 :通孔（貫通孔） 32、33、85、86、98、88、89、90:貫通電極 35 :接合膜 36、37 :迂迴電極 38、39 :外部電極 4〇 :基座基板用晶圓 5〇 :蓋基板用晶圓 -45- 201017942 80 :下模具 8 1 :上模具 8 1 a :插銷 1〇〇 :振盪器 101 :振盪器之積體電路 110:攜帶資訊機器（電子機器） 113:電子機器之計時部 130 :電波時鐘 131:電波時鐘之濾波器The W path 134 is detected and demodulated. Next, the time code is taken out by the waveform shaping circuit 135, and counted by the CPU 136. In the CPU 136, information such as the current year, the accumulated date, the day of the week, and the time is read. The information read is reflected in RTC137, showing the correct moment information. Since the carrier wave is 40 kHz or 60 kHz, the crystal vibrating portions 138 and 139 are preferably vibrating members having the above-described tuning fork type structure. Further, the above description is an example in Japan, and the frequency of the standard wave of the long wave is different overseas. For example, in Germany, a standard wave of 77.5 kHz Q is used. Therefore, when the radio wave clock 130 corresponding to overseas can be incorporated into the portable device, the piezoelectric vibrating member 1 having a frequency different from that in Japan must be provided. As described above, according to the radio-controlled timepiece 130 of the present embodiment, the piezoelectric wave device 1 having a smaller size than the conventional one can be reduced in size, which is equivalent to a smaller size in the future. Demand for change. In addition to this, the time can be counted with high precision for a long period of time. Further, the technical scope of the present invention is not limited to the above-described embodiment of the present invention, and various modifications can be made without departing from the spirit and scope of the invention. For example, in the above-described embodiment, a piezoelectric vibrating piece having a groove in which the groove portion 18 is formed on both surfaces of the vibrating arms 10 and 11 is exemplified as an example of the piezoelectric vibrating reed 4, but even if it is not A piezoelectric vibrating piece of the type having the groove portion 18 may also be used. However, when the specific voltage is applied to the pair of excitation electrodes 15 by forming the groove portion 18, the electric field efficiency between the pair of excitation electrodes 15 can be improved, so that vibration loss can be further suppressed and φ high vibration characteristics can be further improved. . In other words, CI 値 (Crystal Impedance) can be further lowered to achieve higher performance of the piezoelectric vibrating reed 4 . In this point, it is preferable to form the groove portion 18. In the above-described embodiment, the tuning-fork type piezoelectric vibrating reed 4 is described as an example, but the tuning-fork type is not limited. For example, even a thick shear vibrating piece can be used. Further, in each of the above embodiments, the bumps are bonded to the piezoelectric vibrating reed 4, but are not limited to the bump bonding. φ Further, although the case where the anodic bonded base substrate 2 and the lid substrate 3 are exemplified will be described as an example, the bonding method is not limited to the anodic bonding. For example, even if gold tin solder is used, the base substrate 2 and the lid substrate 3 may be bonded. At this time, the wafer 40 for the base substrate and the wafer 50 for the lid substrate may be joined by gold-tin solder at the time of the bonding process. In the above-described embodiment, when the concave portion forming the concave portion 3a for the cavity is formed in the lid substrate wafer 150, the etching is performed by etching or the like, but the cutting is not performed. The concave portion 3a may be formed. For example, the recess 3a may be formed by the coating of the screen printing glass, -33-201017942. At this time, as shown in Fig. 21, when the concave portion forming process S22 is performed, the printing process S22a, the drying process S22b, and the sintering process S22c may be performed. These projects are described in detail. First, as shown in Fig. 22, the lid substrate wafer 50 which has been cleaned and the like is placed on the wafer fixing plate 70, and is fixed by the fixing jig 51. Then, a printed mask of the screen is fixed on the surface of the fixed wafer substrate wafer 50. The print mask 52 is a mask that is disposed to cover a region that becomes the recess 3a, and has a thickness of about 50//m to 200/zm. Then, as shown in Fig. 23, after the coating material P1 serving as the printing ink glass is supplied to the surface of the lid substrate wafer 50, the squeegee 53 is moved to pressurize the coating material P1 to extend the entire surface. As a result, the coating material P1 is printed on the wafer 50 for the cover substrate which is not masked because it is pushed out of the area where it is not covered. That is, the coating material P1 of the screen printing glass can be formed in a state where the pattern is formed to surround the portion which becomes the concave portion 3a. Accordingly, the printing process S22a is ended. Further, the thickness of the printed material P1 to be printed at one time is the same as the thickness of the printed mask 52. Next, a drying process S22b for drying the printed material P1 of the printed glass is performed. For example, each wafer fixing plate 70 is placed in a furnace and dried at a temperature of about 1 ° C for about 30 minutes. Accordingly, the state in which the paint P1 of the previously printed glass is dried is obtained. Then, the above-described printing process S22a is performed again, and the new paint of the glass is printed on the dried paint P1 to be repeatedly printed. Thereafter, the new coating P1 is dried again by the drying process S22b. 201017942 Then, as shown in Figs. 24 and 25, the printing process S22a and the drying process S22b' are repeatedly performed until the concave portion 3a is formed by repeated coating of the paint P1. Further, in Figs. 24 and 25, the case where the printing process S22a and the drying process S22b are performed three times and the stroke concave portion 3a is performed is shown. That is, the height of the entire paint P1 which is repeatedly applied is the thickness of the printing mask 52 when it is 50 "m' is 150/zm. Then, the 150; / m becomes the depth of the recess 3a. φ Then, after the concave portion 3a is formed by repeated coating of the coating material P1, the sintering process S22C in which the coating material P1 which is repeatedly coated and dried is sintered and hardened is sintered. Accordingly, the repeatedly applied coating material P1 and the lid substrate wafer 50 are integrated. As a result, the concave portion 3a can be formed on the lid substrate wafer 50 without performing cutting processing such as etching. In particular, since it is not necessary to cut the wafer 50 for the lid substrate, the load applied to the wafer 50 can be reduced, and the crystallinity of the piezoelectric vibrator 1 can be made upward. Further, the thickness of the printing mask 50 or the number of φ printings can be set freely. Further, in the above embodiment, when the via hole is formed in the base substrate wafer 40, it may be formed by machining with a mechanical drill, or by laser processing, or by sandblasting. . In this case, when the through hole is formed, the bit processing and the laser pressing may be used, and when the through hole of the tapered shape is formed, sandblasting may be employed. In particular, as a method of forming a through hole as a simple and reliable through hole, a method formed by pressurization of a mold is preferred. At this time, as shown in Fig. 26, at the time of the through hole forming process S32, the fixing works S32a - 35 - 201017942, the pressurizing process S32b, and the cooling process 32c may be performed. Detailed instructions for each project. First, as shown in Fig. 27, the susceptor substrate wafer 40 that has finished cleaning or the like is placed in a fixed project 32a between the downward mold 80 and the upper mold 81 having the plug 81a protruding downward. And the latch 81a is formed into a tapered shape which gradually decreases in diameter toward the tip end. Further, the upper mold 81 is additionally mounted with a positioning pin 81b which is different from the plug 81a and which is inserted into the positioning hole 80a of the lower mold 80. Further, before the fixing process 32a is performed, the opening positioning pin 81b is inserted into the insertion hole 40a of the base substrate wafer 40, and the insertion hole 40a is positioned to face the positioning hole 80a. Next, the entire substrate wafer 40 is heated to a specific temperature (temperature above the glass softening point) by putting the whole into the furnace, and as shown in Fig. 28, by the lower mold 80 and the lower mold 81 The pressurization process 3 2b of the through hole is formed in the base substrate wafer 40 by the pin 81a of the upper mold 81. At this time, the positioning pin 81a of the upper mold 81 is inserted into the insertion hole 40a of the base substrate wafer 40, and enters the positioning hole 80a of the lower mold 80. Therefore, since the lower mold 80, the upper mold 81, and the base substrate wafer 40 are each positioned with each other, the through holes can be formed with high precision at a desired position. Then, finally, the cooling process 32c for cooling and solidifying the base substrate wafer 40 is performed. Thereby, the through hole forming process S32 is completed. In particular, since the through holes can be formed at one time by a simple method of pressurizing only the mold, the manufacturing efficiency can be improved. Further, a tapered through hole - 36 - 201017942 can be formed. However, when the through hole is formed by a press mold, it is preferable to use the wafer 40 having a circular shape in plan view. In other words, when the susceptor circle 40 has a circular shape, even if the cooling of the work 32c is performed by the pressurization process 32b, the wafer is expanded and contracted, and it is difficult to be deformed, and dimensional accuracy and thickness accuracy can be maintained high. The level is assumed to be rectangular in plan view (for example, when it is in a rectangular circle in a plan view, when it expands or contracts due to heating or cooling, φ has a shape deformation, and dimensional accuracy and thickness accuracy are lowered. In the case of the expansion, it is easy to concentrate in the vicinity of the corners. Therefore, it is possible to make the degree of expansion and the degree of shrinkage uneven and difficult. In addition, when the wafer having a rectangular shape in plan view is used, the accuracy of the inch and the thickness accuracy are lowered. The degree of expansion and the effect of uniformity cause an excessive load to act on the pin 81a, and the insert|may be deformed or bent. However, since the round wafer is formed without the corner, even the pressurization processing of the heating and cooling is formed. The hole is small in the above-mentioned problem, and after the cooling process 32c, even the two sides of the base circle 40 can be honed. Thus, it is possible to achieve a more reliable one. In the embodiment, it is preferable to apply plasma (plasma) to the lead-out electrodes 36 and 37 for 10 seconds or more before the electrode 36 and the bump B are formed, and it is preferable to apply a plasma cleaning treatment. The source of pollution makes the surface on which the bump B is formed clean and can be modified. In particular, since the plasma is irradiated for at least 1 sec, the source of the contamination can be surely removed. Accordingly, the crystal heat of the substrate can be improved as described above. When the crystal is cold on the way, the crystal is returned to the original due to internal stress, and the degree of the scale is not the same as that of the 81a. 37 upper shape, for example, oxygen, can be removed, and therefore does not residue B. -37- 201017942 Sex, joint, and can improve the shear peel strength of the bump B. Therefore, the performance of the piezoelectric vibrating reed 4 can be improved. As a result, the piezoelectric vibrator 1 can be improved in quality. Here, in Fig. 29, when the bump B is formed without applying the plasma cleaning treatment, and when the bump B is formed after the plasma cleaning treatment is applied, the bump B is actually applied. The result of the trace test. Further, the test at the time of applying the plasma cleaning treatment was carried out in two ways of irradiating the plasma for 10 seconds and irradiating the plasma for 30 seconds. φ Again, the scratch test is performed in either case. Furthermore, 'the scratch strength of the bump B, that is, the shear strength, is tested at an average of 55 (gf) when no plasma cleaning treatment is formed, and an average of 78 (gf) when the plasma is irradiated for 1 second. The test was conducted and the test was carried out at an average of 83 (gf) when the plasma was irradiated for 30 seconds. Further, the fracture mode A indicates a case where the scratch test result 'does not remove the bump B and remains in an almost intact state. The fracture mode B indicates the result of the scratch test, although some of the bumps B were removed, but most of the cases remained. The fracture mode C indicates the result of the scratch test, and most of the bump B is removed, and a part of the residue is left. The fracture mode D indicates the result of the scratch test, and the bump B was completely removed. As shown in Fig. 29, first, as a result of performing a scratch test on the bump B formed by not performing the plasma cleaning treatment, 85% was the fracture mode C, and the fracture mode A was 0%. In this regard, as a result of performing a scratch test on the bump B formed after the plasma cleaning treatment, even if the irradiation time of the plasma is 10 seconds or 30 seconds, 100% is a fracture mode. 38- 201017942 Formula A. Moreover, regardless of the scratch strength (shear strength), all are in the state of the fracture mode A. As a result, after the plasma cleaning treatment was applied, it was confirmed that the shear peel strength of the bump B became high by forming the bump B. Further, by irradiating the plasma for at least 10 seconds, it was confirmed that sufficient effects were exhibited. Further, in the above-described embodiment, before the bump B is formed, surface processing is performed on the upper surface of the base wafer wafer 40, and a surface having an arithmetic mean roughness (Ra) of 1 Onm or less is performed. Processing engineering is better. As a method of surface processing, there are mirror honing such as polishing, or surface boring by sliding. Regardless of the method, it is possible to make the upper surface of the wafer 40 for the base substrate which is the base of the bump B formed by surface processing as close as possible to the smooth surface. Therefore, the adhesion to the bump B and the bondability can be improved, and the shear peel strength of the bump B can be improved. According to this, even in this method, the stent performance 压电 of the piezoelectric vibrating reed 4 can be improved, and as a result, the piezoelectric vibrator 1 can be made higher in quality. In particular, by combining the method and the above-described plasma cleaning treatment, the effect can be further improved, which is preferable. Further, in the above-described embodiment, the through electrodes 32 and 33 are formed by burying the via holes 30 and 31 with a conductor (not shown), but the coating material P3 containing the plurality of metal fine particles P2 shown in Fig. 30 is buried. The through holes 30 and 31 and the coating material P3 are hardened, and as described above, the through electrodes 85 and 86 may be used. At this time, the through electrodes 85 and 86 are in contact with the plurality of metal fine particles P2 contained in the coating material P3, thereby ensuring electrical conductivity -39 - 201017942. Therefore, it is possible to function as an electrode. When the through electrodes 85 and 80 are formed by the coating material P3, the through electrode forming process S3 3 is performed as follows. First, the metal microparticles P2 are buried in the via holes 30 and 31 without any gaps. The charging of the through holes 30, 31 is blocked. Next, a sintering process in which the filled coating P3 is sintered at a specific temperature to harden is performed. Accordingly, the coating material P3 is in a state of being tightly fixed to the inner faces of the through holes 30, 31. However, since the hardened coating material P3 evaporates due to the organic matter in the coating material P3 which is not shown during the sintering, the volume is reduced as compared with the charging operation. Therefore, on the surface of the coating P3, a depression is generated anyway. Here, after sintering, a honing process of honing both sides of the wafer 40 for the base substrate with a specific thickness is performed. By performing this process, it is also possible to simultaneously honing both sides of the coating material P3 which is hardened by sintering, so that the periphery of the depressed portion can be removed. That is, the surface of the coating material P3 can be made flat. As a result, the surface of the base substrate wafer 40 and the surfaces of the through electrodes 85 and 86 can be brought into almost the same surface. By performing the honing process, the through electrode formation process is completed. As a result, the through electrodes 85 and 86 can be formed by the coating material P3. Further, in Fig. 31, a case in which the tapered through holes 30, 31 are formed will be exemplified. At this time, when the through holes 30 and 31 are formed, they may be formed by sandblasting or pressurization according to the above mold. Further, when the through electrode is formed by the coating material P3, the through-electrodes 87 and 88 may be formed by curing the coating material P3 containing a plurality of glass beads as shown in Fig. 32. At this time, since only the portion of the glass beads 201017942 can reduce the amount of the coating material P3, the amount of organic matter reduced by sintering can be reduced. Accordingly, the surface depression which occurs after the coating material P3 is hardened can be reduced to an almost negligible level. Therefore, there is an advantage that the honing process can be removed. Further, in another example of the through electrode, even as shown in Fig. 33, the cylindrical body 91 embedded in the through holes 30, 31 and the central hole 91a inserted into the cylindrical body 91 are The through electrodes 89 and 90 may be formed by the core 92 having a conductive ❹ which is fixed by sintering. Further, even in the 33rd drawing, the case where the tapered through holes 30 and 31 are formed is exemplified. The through electrode forming process at this time may be carried out as follows. First, the cylindrical body 91 is buried in the through holes 30, 31, and the fixing work of inserting the core material 92 in the center hole 91a of the cylindrical body 91 is performed. Further, as shown in FIG. 34, the cylindrical body 91 is temporarily sintered by using the same glass material as that of the base substrate 2, and the both ends are flat and formed into a cylindrical shape having substantially the same thickness as that of the base substrate 2. Further, a center hole 91a penetrating the cylindrical body 91® is formed at the center, and a conical shape (a cross-sectional tapered shape) is formed by fitting the through holes 30 and 31 with the outer shape. Further, as shown in Fig. 33, the core material 92 is a conductive core material in which a columnar shape is formed of a metal material, and is formed to have a thickness substantially the same as that of the base substrate 2 in the same manner as the cylindrical body 91. Then, after the final setting process is finished, a sintering process in which the buried cylinder 91 is sintered at a specific temperature is performed. Accordingly, the through holes 30, 31 and the cylindrical body 91 and the core member 92 can be integrally fixed. Thereby, the through electrodes 89 and 90 can be formed, and the through electrode forming process is completed. In particular, since the glass cylinder 91 is used without the coating material P3, it is difficult to reduce the volume of the cylinder 91 after the sintering -41 - 201017942, and it is difficult to form a depression on the surface. Therefore, the through electrodes 89 and 90 can be formed without performing the honing process. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing an embodiment of the present invention, which is an external perspective view of a piezoelectric vibrating member. Fig. 2 is a view showing the internal configuration of the piezoelectric vibrating piece shown in Fig. 1, and the piezoelectric crystal vibrating piece is viewed from above when the cover substrate is removed. Fig. 3 is a cross-sectional view showing the piezoelectric vibrating member taken along the line A-A shown in Fig. 2. Fig. 4 is an exploded perspective view showing the piezoelectric vibrating member shown in Fig. 1. Fig. 5 is a top view of the piezoelectric vibrating piece constituting the piezoelectric vibrating piece shown in Fig. 1. Fig. 6 is a bottom view of the piezoelectric vibrating piece shown in Fig. 5. Fig. 7 is a cross-sectional view taken along line B-B of Fig. 5. Fig. 8 is a flow chart showing the flow of the piezoelectric vibrating member shown in Fig. 1. FIG. 9 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in FIG. 8 and is a view showing a state in which a plurality of concave portions are formed in a wafer for a lid substrate which is the source of the lid substrate. formula. FIG. 10 is a view showing a state in which a piezoelectric vibrator is manufactured along the flow chart shown in FIG. 8 and is a view showing a state in which a plurality of concave portions are formed in a wafer for a lid substrate which is the source of the lid substrate. formula. Fig. 11 is a view showing a state in which a through electrode is formed in a pair of through holes -42 - 201017942 and a meandering electrode is formed on the upper surface of the base substrate wafer, after the state shown in Fig. 10. Fig. 12 is a general view of a wafer for a base substrate in a state shown in Fig. 11. Fig. 13 is a view showing an engineering process for manufacturing a piezoelectric vibrating member along the flow chart shown in Fig. 8, in which the susceptor substrate is anodically bonded in a state in which the piezoelectric vibrating reed is housed in the cavity. An exploded perspective view of the φ wafer body of the wafer and the wafer for the lid substrate. Fig. 14 is a view showing an equivalent circuit of the piezoelectric vibrating member. Fig. 15 is a view showing the calculation of the series capacitance shown in Fig. 14. Fig. 16 is a view showing the results of comparing C1 and CO when the piezoelectric vibrating piece of the holder is joined by soldering and when the piezoelectric vibrating piece is bonded by the bump. Figure 17 is a diagram showing the CL curve. Fig. 18 is a view showing an embodiment of the present invention, and φ is a configuration diagram of an oscillator. Fig. 19 is a view showing an embodiment of the present invention, which is a configuration diagram of an electronic device. Fig. 20 is a view showing an embodiment of the present invention, which is a configuration diagram of a radio wave clock. Fig. 21 is a view showing a modification of the piezoelectric vibrating member according to the present invention, and a flow chart for forming a concave portion for a cavity by a screen printing paint. Fig. 22 is a view showing a drawing when the concave portion -43 - 201017942 is formed along the flow chart shown in Fig. 21, and the printing mask is fixed after the wafer for the cover substrate is fixed on the wafer fixing plate. The schema of the state. Fig. 23 is a view showing the state of the screen printing paint by the state shown in Fig. 22. Fig. 24 is a view showing a state in which the screen printing and drying are repeatedly performed in the state shown in Fig. 23 to form a concave portion. Fig. 25 is a cross-sectional view taken along line C-C of Fig. 24. Fig. 26 is a view showing a modification of the piezoelectric vibrating member according to the present invention, and a flow chart in which a through hole is formed in a base substrate wafer by a press mold. Fig. 27 is a view showing a state of a drawing when a through hole is formed along the flow chart shown in Fig. 26, and is a view showing a state in which a wafer for a base substrate is placed between a lower mold and an upper mold. Fig. 28 is a view showing a state in which the lower mold and the upper mold press the wafer for the base substrate after the state shown in Fig. 27 is shown. Fig. 29 is a view showing the scratch test of the bump when the piezoelectric vibrating member according to the present invention is formed, when the bump is formed without applying the plasma cleaning treatment, and when the bump is formed after the application. The schema of the result. Figure 30 is an enlarged view of a coating containing metal particles. Fig. 31 is a view showing a modification of the piezoelectric vibrator according to the present invention, and is a view showing a piezoelectric vibrator when a through electrode is formed by using the paint shown in Fig. 30. FIG. 3 is a view showing a modification of the piezoelectric vibrating piece according to the present invention, and is a view showing a piezoelectric vibrating member when the through electrode is used to form the through electrode -44 to 201017942 by using the coating material shown in FIG. . Fig. 33 is a view showing another modification of the piezoelectric vibrating piece according to the present invention, and is a view showing a piezoelectric vibrating member when a through electrode is formed by a cylindrical body of sintered glass and a conductive core material. formula. Figure 34 is a perspective view of the cylinder shown in Figure 33. Fig. 35 is a cross-sectional view showing an example of a conventional three-layer structure type piezoelectric vibrating member. [Description of main component symbols] B: Bump C: Cavity P 1 : Coating 1: Piezoelectric vibrating member 2: Base substrate 3: Cover substrate 3a: Concave portion for cavity 4: Piezoelectric vibrating piece 3 〇, 3 1 : through hole (through hole) 32, 33, 85, 86, 98, 88, 89, 90: through electrode 35: bonding film 36, 37: winding electrode 38, 39: external electrode 4: crystal for base substrate Round 5: wafer for cover substrate -45- 201017942 80: lower mold 8 1 : upper mold 8 1 a : plug 1 〇〇: oscillator 101: integrated circuit of oscillator 110: carrying information machine (electronic machine) 113: Timing unit 130 of electronic machine: radio wave clock 131: filter of radio wave clock
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