WO2010016720A3 - 2세대 고온 초전도 선재의 용융확산 접합방법 - Google Patents

2세대 고온 초전도 선재의 용융확산 접합방법 Download PDF

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Publication number
WO2010016720A3
WO2010016720A3 PCT/KR2009/004360 KR2009004360W WO2010016720A3 WO 2010016720 A3 WO2010016720 A3 WO 2010016720A3 KR 2009004360 W KR2009004360 W KR 2009004360W WO 2010016720 A3 WO2010016720 A3 WO 2010016720A3
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WIPO (PCT)
Prior art keywords
high temperature
temperature superconducting
superconducting wire
generation high
superconductor
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PCT/KR2009/004360
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English (en)
French (fr)
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WO2010016720A9 (ko
WO2010016720A2 (ko
Inventor
이해근
송정빈
김현성
권나영
Original Assignee
케이조인스(주)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020080076174A external-priority patent/KR100964354B1/ko
Priority claimed from KR1020080076178A external-priority patent/KR100964361B1/ko
Application filed by 케이조인스(주) filed Critical 케이조인스(주)
Priority to EP09805181A priority Critical patent/EP2312592A4/en
Priority to JP2010547577A priority patent/JP5214744B2/ja
Priority to CN2009801062233A priority patent/CN101971273B/zh
Priority to US12/600,282 priority patent/US20100210468A1/en
Publication of WO2010016720A2 publication Critical patent/WO2010016720A2/ko
Publication of WO2010016720A9 publication Critical patent/WO2010016720A9/ko
Publication of WO2010016720A3 publication Critical patent/WO2010016720A3/ko

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/80—Constructional details

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  • Superconductors And Manufacturing Methods Therefor (AREA)

Abstract

본 발명은 기판부, 완충층, 초전도체층 및 안정화재층을 포함한 2세대 고온 초전도 선재의 접합방법에 관한 것으로서, 2세대 고온 초전도 선재 2가닥에 포함된 안정화재층의 일부를 제거하고, 안정화재층이 제거되어 노출된 2세대 고온 초전도 선재 2가닥의 초전도체층을 맞대어 접촉하도록 고정한 다음 초전도체층의 용융점(melting point)까지 가열함으로써 맞대어 접촉한 초전도체층을 용융확산(melting diffusion)시켜 2세대 고온 초전도 선재 2가닥을 접합한다. 이후 접합부분을 산소분위기로 산화(oxygenation annealing)시켜 2세대 고온 초전도 선재의 초전도 특성을 회복한다. 이러한 구성에 의하여 중간 매개체 없이 직접 초전도체층을 맞대어 용융확산함으로써, 상전도 접합에 비해 접합저항이 거의 없이 충분히 긴 선재를 제작할 수 있고, 특히, 산소분압을 진공에 가까운 상태로 만들어 공융점을 낮춤으로써, 은(Ag)을 함유한 안정화재층 등이 용융되지 않게 하면서 접합할 수 있다.
PCT/KR2009/004360 2008-08-04 2009-08-04 2세대 고온 초전도 선재의 용융확산 접합방법 WO2010016720A2 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP09805181A EP2312592A4 (en) 2008-08-04 2009-08-04 FUSION DIFFUSION WELDING METHOD FOR SECOND GENERATION HIGH TEMPERATURE SUPERCONDUCTING WIRE
JP2010547577A JP5214744B2 (ja) 2008-08-04 2009-08-04 減圧された酸素分圧下における熱処理を用いた２世代高温超伝導線材の超伝導接合方法
CN2009801062233A CN101971273B (zh) 2008-08-04 2009-08-04 第二代高温超导线材的熔融扩散接合方法
US12/600,282 US20100210468A1 (en) 2008-08-04 2009-08-04 Method for joining second-generation high-temperature superconducting wires by melting diffusion

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2008-0076178 2008-08-04
KR1020080076174A KR100964354B1 (ko) 2008-08-04 2008-08-04 초전도체층의 직접 용융확산에 의한 2세대 초전도 선재의접합방법
KR1020080076178A KR100964361B1 (ko) 2008-08-04 2008-08-04 산소분압 조절을 통한 2세대 초전도 선재의 용융확산접합방법
KR10-2008-0076174 2008-08-04

Publications (3)

Publication Number Publication Date
WO2010016720A2 WO2010016720A2 (ko) 2010-02-11
WO2010016720A9 WO2010016720A9 (ko) 2010-04-29
WO2010016720A3 true WO2010016720A3 (ko) 2010-06-17

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PCT/KR2009/004360 WO2010016720A2 (ko) 2008-08-04 2009-08-04 2세대 고온 초전도 선재의 용융확산 접합방법

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Country Link
US (1) US20100210468A1 (ko)
EP (1) EP2312592A4 (ko)
JP (1) JP5214744B2 (ko)
CN (1) CN101971273B (ko)
WO (1) WO2010016720A2 (ko)

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Also Published As

Publication number Publication date
WO2010016720A9 (ko) 2010-04-29
CN101971273B (zh) 2012-07-04
JP2011515792A (ja) 2011-05-19
US20100210468A1 (en) 2010-08-19
EP2312592A2 (en) 2011-04-20
JP5214744B2 (ja) 2013-06-19
WO2010016720A2 (ko) 2010-02-11
CN101971273A (zh) 2011-02-09
EP2312592A4 (en) 2012-12-26

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