WO2010016484A1 - 真空処理装置、真空処理方法 - Google Patents
真空処理装置、真空処理方法 Download PDFInfo
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- WO2010016484A1 WO2010016484A1 PCT/JP2009/063799 JP2009063799W WO2010016484A1 WO 2010016484 A1 WO2010016484 A1 WO 2010016484A1 JP 2009063799 W JP2009063799 W JP 2009063799W WO 2010016484 A1 WO2010016484 A1 WO 2010016484A1
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- degassing
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/081—Oxides of aluminium, magnesium or beryllium
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/021—Cleaning or etching treatments
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67201—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the load-lock chamber
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/6723—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one plating chamber
Definitions
- the present invention relates to a vacuum processing apparatus having a degassing chamber, and more particularly to a vacuum processing apparatus that performs processing in a high vacuum atmosphere after degassing a substrate.
- a degassing chamber In vacuum processing equipment that loads substrates from the atmosphere, a degassing chamber is provided in front of the processing chamber. The substrate is heated inside the degassing chamber to release the adsorbed gas, and then it is carried into the processing chamber to form a thin film. And vacuum treatment such as surface treatment.
- the vacuum processing apparatus is an MgO film forming apparatus that forms an MgO thin film on the surface of the substrate
- the substrate is mounted on the carrier in the atmosphere and placed in the loading chamber, so that a large amount of gas is adsorbed on the carrier. ing. Therefore, when moving the substrate from the loading chamber to the processing chamber, in order to reduce the amount of adsorbed gas released from the substrate and the carrier, it is carried into the degassing chamber and heated for as long as possible while evacuating the degassing chamber. After the inside becomes a high vacuum atmosphere, it is moved to the processing chamber.
- a vacuum pump having a large exhaust amount as much as possible is connected to the carry-in chamber, the degassing chamber, the buffer chamber, and the like to evacuate to a high vacuum atmosphere.
- a high-vacuum pump turbomolecular pump or cryopump
- the frequency of opening and closing is 27,000 times or more per month, it is necessary to overhaul once every about three months, and valve overhaul and failure are a major cause of apparatus downtime.
- a plurality of degassing chambers were connected in series, and a high vacuum exhaust pump (a combination of a cold trap and a turbo molecular pump or a cryopump) was connected to each degassing chamber ( In addition, a back pump is connected).
- a high vacuum exhaust pump a combination of a cold trap and a turbo molecular pump or a cryopump
- the present invention provides a vacuum processing apparatus that does not require a large vacuum pump and can perform processing in a high vacuum atmosphere at low cost.
- the degassing chamber for performing the heat degassing is more than the vacuum evacuation apparatus connected to the processing chamber.
- the present invention has been created based on the above knowledge, and has a degassing chamber having a substrate heating mechanism and a processing chamber for performing vacuum processing of the substrate, and the degassing chamber and the processing chamber are in a vacuum.
- a vacuum processing apparatus that is placed in an atmosphere and heated in the degassing chamber and degassed is carried into the processing chamber and vacuum-treated in the processing chamber, and is connected to the degassing chamber
- the evacuation speed of the degassing chamber evacuation apparatus is a vacuum processing apparatus in which the evacuation speed of the processing chamber evacuation apparatus connected to the processing chamber is made smaller.
- the present invention is a vacuum processing apparatus using a vacuum pump in which an ultimate pressure of the degassing chamber evacuation apparatus is higher than an ultimate pressure of the processing chamber evacuation apparatus.
- the present invention is a vacuum processing apparatus in which an MgO vapor deposition source is disposed in the processing chamber, MgO vapor is released from the MgO vapor deposition source, and an MgO thin film is formed on the surface of the processing object.
- the present invention includes a plurality of the degassing chambers, the degassing chambers are connected in series, and the processing object is degassed in the degassing chambers and then moved to the processing chamber. Vacuum processing apparatus.
- the vacuum exhaust device for the degassing chamber has a pumping speed at which the pressure in the degassing chamber is set to a pressure atmosphere of 1 Pa or more and 100 Pa or less, and the vacuum exhaust device for the processing chamber is disposed in the processing chamber. It is a vacuum processing apparatus having a vacuum exhaust speed that makes the pressure less than 1 Pa.
- the present invention also includes a degassing chamber having a substrate heating mechanism, a buffer chamber connected to the degassing chamber, and a processing chamber connected to the buffer chamber, and the degassing chamber and the buffer chamber
- the processing chamber is placed in a vacuum atmosphere, and a processing object heated and degassed in the degassing chamber is carried into the processing chamber through the buffer chamber and vacuum processed in the processing chamber.
- a vacuum processing apparatus wherein the exhaust speed of the vacuum exhaust device for the degas chamber connected to the degas chamber is smaller than the exhaust speed of the vacuum exhaust device for the buffer chamber connected to the buffer chamber It is.
- the present invention is the vacuum processing apparatus in which the exhaust speed of the vacuum exhaust apparatus for the degassing chamber is smaller than the exhaust speed of the vacuum exhaust apparatus for the processing chamber connected to the processing chamber. Further, the present invention is a vacuum processing apparatus using a vacuum pump in which the ultimate pressure of the vacuum exhaust device for the degassing chamber is higher than the ultimate pressure of the vacuum exhaust device for the buffer chamber. In addition, the present invention is a vacuum processing apparatus in which an MgO vapor deposition source is disposed in the processing chamber, MgO vapor is released from the MgO vapor deposition source, and an MgO thin film is formed on the surface of the processing object.
- the present invention includes a plurality of the degassing chambers, the degassing chambers are connected in series, and the processing object is degassed in the degassing chambers and then moved to the buffer chamber Vacuum processing apparatus.
- the degassing chamber evacuation apparatus has an evacuation speed at which the pressure in the degassing chamber is set to a pressure atmosphere of 1 Pa or more and 100 Pa or less, and the buffer chamber evacuation apparatus is disposed in the buffer chamber. It is a vacuum processing apparatus having a vacuum exhaust speed that makes the pressure less than 1 Pa.
- the present invention provides a carrier unit with a processing object mounted on a carrier, the carrier unit is carried from an atmospheric atmosphere into a vacuum atmosphere, and the carrier unit is heated in a degas chamber and degassed. Then, after carrying in the buffer chamber and reducing the pressure in the buffer chamber, the buffer chamber and the processing chamber are connected, the transfer unit is transferred into the processing chamber, and the processing object in the transfer unit is evacuated.
- a vacuum processing method for processing wherein the pressure in the degassing chamber is set to a pressure atmosphere of 1 Pa to 100 Pa, and the pressure in the processing chamber is set to less than 1 Pa.
- the present invention is a vacuum processing method in which MgO vapor is generated in the processing chamber and an MgO thin film is formed on the surface of the processing object.
- the evacuation system becomes low cost and the installation space of the apparatus is also reduced. Since the carry-in chamber does not need to be in a high vacuum atmosphere, there is no need to provide a large valve in the vacuum exhaust system of the carry-in chamber. From the graph of FIG. 4, if the vacuum chamber is evacuated to a pressure that can be connected to the processing chamber in the buffer chamber in front of the processing chamber, the pressure in the evacuated loading chamber and the degassing chamber pressure is It turns out that it may be about 3 times or more of the conventional one. As a result, the present invention can greatly reduce the vacuum exhaust system, and can reduce the apparatus cost by about 5% to 10%.
- facility power, power consumption during operation, and cooling water were reduced by about 5%.
- installation space was reduced by about 3%.
- unnecessary vacuum evacuation devices the reliability of the entire device can be improved, and at the same time, periodic maintenance costs can be reduced.
- FIG. 1 An example of the vacuum processing apparatus of the present invention Diagram for explaining the transport unit The figure for demonstrating the other example of this invention Graph showing the time change in the ambient pressure of the transport unit (a): Single-wafer type vacuum processing apparatus as an example of the present invention (b): Conventional single-wafer type vacuum processing apparatus
- Conveyance unit 7 ... Carrier 10, 20 ... Vacuum processing apparatus 11, 12, 21, 22 ... Degassing chamber 13 ... Buffer chamber 14, 24 ... Processing chamber 17 ... Cooling chamber 18 ... Processing Object 31, 32... Substrate heating mechanism 33... Buffer chamber heating mechanism 35... MgO vapor deposition source 61, 62, 71, 72... Degassing chamber vacuum exhaust device 63.
- reference numeral 10 indicates a vacuum processing apparatus as an example of the present invention.
- the vacuum processing apparatus 10 includes a loading chamber 15, a first degassing chamber 11, a second degassing chamber 12, a buffer chamber 13, a processing chamber 14, a cooling chamber 17, and an unloading chamber 16.
- the chambers 15, 11-14, 17, 16 are arranged in this order and are connected in series by gate valves 51-56.
- the first and second degassing chambers 11 and 12 are connected to the first and second degassing chamber vacuum exhaust devices 61 and 62, respectively, and the buffer chamber 13 is connected to the buffer chamber vacuum exhausting device 63.
- the processing chamber 14 is connected to a processing chamber vacuum exhaust device 64.
- a cooling chamber evacuation device 67 is connected to the cooling chamber 17.
- the gate valves 51 to 56 are closed, the vacuum exhaust devices 61 to 64, 67 are operated, and the interiors of the first and second degassing chambers 11, 12, the buffer chamber 13, the processing chamber 14, and the cooling chamber 17 are preliminarily evacuated. Evacuate and start vacuum processing. After the start, the vacuum evacuation devices 61 to 64, 67 are operated, and the first and second degassing chambers 11, 12, the buffer chamber 13, the processing chamber 14, and the cooling chamber 17 are continuously evacuated. Do.
- a processing object 18 such as a glass substrate is placed on a carrier 7 by a frame 19 to form a transport unit 5, and a door 57 between the carry-in chamber 15 and the atmospheric atmosphere is opened and transported.
- the unit is carried into the carry-in chamber 15.
- the door 57 is closed and the inside of the carry-in chamber 15 is evacuated by the carry-in chamber vacuum exhaust device 65.
- the gate valve 51 is opened to move one transport unit 5 from the carry-in chamber 15 into the first degassing chamber 11.
- First and second heating mechanisms 31 and 32 are provided in the first and second degassing chambers 11 and 12, respectively.
- the first heating mechanism 31 is energized in advance to generate heat.
- the transport unit 5 is opposed to the first heating mechanism 31 and the gate valve 51 between the carry-in chamber 15 is closed and the transport unit 5 is heated, the transport unit 5 is attracted to the transport unit 5 from the heated temperature.
- the adsorbed gas is discharged into the first degassing chamber 11.
- the adsorbed gas released from the transport unit 5 is evacuated by the first evacuation device 61.
- the inside of the first degassing chamber 11 is continuously evacuated by the first evacuation device 61 and the amount of released gas Q 1 decreases with the passage of time of the degassing process, the inside of the first degassing chamber 11 Pressure also drops.
- the effective evacuation speed S 1 of the first vacuum evacuation device 61 is such that the pressure P 1 in the first degassing chamber 11 is 1 when the degassing process is performed only during a preset first degassing process time.
- the gate valve 52 is opened with the passage of the first degassing treatment time, and the transport unit 5 is removed from the first degassing chamber 11 with the second degassing chamber. It is moved to the gas chamber 12.
- the transport unit 5 faces the second heating mechanism 32.
- the transfer unit 5 is heated while the gate valve 52 is closed and the inside of the second degassing chamber 12 is evacuated by the second evacuation device 62.
- the transport unit 5 is degassed inside the second degassing chamber 12 for a preset second degassing time.
- the effective evacuation rate S 2 of the second evacuation device 62 is degassed for the preset second degassing time, in the same way as the effective evacuation rate S 1 of the first evacuation device 61.
- the pressure P 2 in the second degassing chamber 12 is large enough to reach a pressure in the range of 1 to 100 Pa.
- the effective exhaust speed S 2 of the second vacuum exhaust device 62 is the same as the effective exhaust speed S 1 of the first vacuum exhaust device 61, but the inside of the second degassing chamber 12 of the transport unit 5.
- the amount Q 2 of released gas of the adsorbed gas is smaller than the amount Q 1 of released gas in the first degassing chamber 11, and when the degassing process in the second degassing chamber 12 proceeds,
- the internal pressure P 2 of the second degassing chamber 12 is lower than the internal pressure P 1 of the first degassing chamber 11.
- the buffer chamber evacuation device 63 is a high evacuation pump, and its evacuation speed S 3 is larger than the evacuation speeds S 1 and S 2 of the first and second evacuation devices 61 and 62, and the gate valve 53. Is closed and evacuated by the buffer chamber evacuation device 63, the pressure in the buffer chamber 13 rapidly decreases.
- the buffer chamber 13 is provided with a buffer chamber heating mechanism 33
- the transport unit 5 is opposed to the buffer chamber heating mechanism 33
- the first and second degassing chambers 11 and 12 are arranged in the buffer chamber 13.
- the temperature is raised to the same level as the temperature, and the pressure in the buffer chamber 13 is lowered while degassing.
- the inside of the processing chamber 14 is evacuated to a high vacuum atmosphere in advance, and after the internal pressure of the buffer chamber 13 drops to the same level as the internal pressure of the processing chamber 14, the gate valve 54 is opened and the transfer unit 5 is moved to the processing chamber. 14 is moved to close the gate valve 54.
- the processing chamber evacuation device 64 is a high evacuation pump, the evacuation speed S 4 is equal to or higher than the evacuation speed S 3 of the buffer chamber evacuation device 63, and the inside of the processing chamber 14 is the pressure of the buffer chamber 13. The pressure can be lower than that.
- An MgO vapor deposition source 35 is disposed inside the processing chamber 14.
- the transport unit 5 is arranged such that the surface of the processing object 18 is directed to the MgO vapor deposition source 35, and when MgO vapor is released from the MgO vapor deposition source 35, the MgO vapor reaches the surface of the processing object 18, and MgO A thin film grows.
- the gate valve 55 is opened, the transfer unit 5 is moved to the cooling chamber 17, cooled, and then moved to the carry-out chamber 16.
- vacuum processing formation of MgO thin film
- the door 58 to the atmosphere is opened with the gate valve 56 closed, and the transfer unit 5 is taken out to the atmosphere.
- FIG. 4 is a graph showing the relationship between the elapsed time in the vacuum processing apparatus 10 and the pressure of the ambient atmosphere of the transport unit 5, where the horizontal axis indicates the elapsed time and the vertical axis indicates the pressure (arbitrary unit).
- the origin 0 on the horizontal axis indicates the time when the degassing process is started in the first degassing chamber 11, and the symbol t 1 indicates that the transport unit 5 is moved from the first degassing chamber 11 to the second degassing.
- the time moved to the chamber 12 is indicated, the symbol t 2 represents the time moved from the second degassing chamber 12 to the buffer chamber 13, and the symbol t 3 represents the time moved from the buffer chamber 13 to the processing chamber 14. Is shown.
- a group of curves indicated by symbol A indicates a pressure change when the present invention is applied
- a group of curves indicated by symbol B indicates a pressure change in the case of the prior art.
- the vacuum exhaust apparatuses 61 to 67 are individually provided. However, for example, one or more vacuum exhaust apparatuses may be shared.
- the vacuum exhaust devices 65 and 66 for the carry-in chamber 15 and the carry-out chamber 16 can be shared.
- the embodiment in which the pressure in the degas chamber is set to a pressure atmosphere of 1 Pa or more and 100 Pa or less and the pressure in the buffer chamber is set to less than 1 Pa has been described.
- the present invention can also be applied to a vacuum processing apparatus in which a pressure atmosphere is used and the pressure in the buffer chamber is less than 0.1 Pa.
- Reference numeral 110 in FIG. 3 is a vacuum processing apparatus that can be used in the method of the present invention, and has a vacuum chamber 114.
- a substrate heating mechanism 117 is disposed inside the vacuum chamber 114, and a processing object 118 is disposed opposite to the substrate heating mechanism 117.
- a vacuum exhaust device c, 164 is connected to the vacuum chamber 114 via a valve.
- the vacuum evacuation device denoted by c is for roughing, and the evacuation device denoted by 164 is for high vacuum.
- the substrate heating mechanism 117 heats the processing object 118 while evacuating the inside of the vacuum chamber 114 by the roughing vacuum evacuation device c, and the adsorption gas of the processing object 118 is released to perform degassing processing.
- the released adsorbed gas is discharged to the atmosphere by the roughing vacuum exhaust device c.
- the high-vacuum evacuation device 164 is provided with a cryopump. During the degassing process, the valve a between the high-vacuum evacuation device 164 and the vacuum chamber 114 is closed and degassing is performed. The processing is performed by a vacuum evacuation apparatus c for roughing. Since the cryopump is not connected to the internal atmosphere of the vacuum chamber 114, gas is not adsorbed to the cryopump.
- each evacuation device 61 to 63, 65 The configuration of each evacuation device 61 to 63, 65, the evacuation speed of these evacuation devices 61 to 63, 65, and the vacuum when moving the transfer unit 5 to the next vacuum chamber of the vacuum processing apparatus 10 of FIG.
- the pressure inside the tank is shown in Table 1 below.
- the chambers 11 to 14, 16, and 17 other than the carry-in chamber 15 are evacuated in advance.
- the pressure when the processing object 18 is vacuum processed in the processing chamber 14 is on the order of 10 ⁇ 2 Pa.
- the carry-in chamber evacuation device 65 is an evacuation unit that includes a dry pump and a mechanical booster pump, and has a total evacuation speed S 1 of 0.5 m 3 / sec.
- this loading chamber for evacuation device 65 the pressure in the loading chamber 15 which carries the transport unit 5 is evacuated from atmospheric pressure to 10 ⁇ 10 2 Pa base, first with 10 ⁇ 10 2 Pa base pressure Connected to the degassing chamber 11, the transfer unit 5 was moved to the first degassing chamber 11.
- the first evacuation device 61 and the second evacuation device 62 have a wide-area turbo molecular pump (and back pressure) for medium and high vacuum evacuation at evacuation speeds S 2 and S 3 of about 1.0 m 3 / sec, respectively.
- the first pumping device 61 heats the transport unit 5 while evacuating the first degassing chamber 11 to release the adsorbed gas, and degass it for a predetermined time.
- the first degassing chamber 11 is connected to the second degassing chamber 12 in a state where the pressure in the first degassing chamber 11 is evacuated to a level of 1 to 10 Pa, and the transfer unit 5 is connected to the second degassing chamber 12.
- the degassing chamber 12 was moved.
- the second degassing chamber 12 is evacuated by the second vacuum evacuation device 62 to heat the transport unit 5 while maintaining the pressure of 1 to 10 Pa level, to release the adsorbed gas, and to degas for a predetermined time. Then, the transfer unit 5 was moved to the buffer chamber 13 by connecting with the buffer chamber 13 at a pressure of 1 to 10 Pa.
- the buffer chamber vacuum evacuation device 63 is a high vacuum evacuation system using a turbo molecular pump and a cold trap (and back pressure pump) having a total exhaust speed S 3 of about 80 m 3 / sec. 63, the conveying unit 5 is heated while the inside of the buffer chamber 13 is evacuated to release the adsorbed gas, and degassing is performed for a predetermined time. After the pressure in the buffer chamber 13 drops to 10 ⁇ 3 Pa level, 13 was connected to the processing chamber 14, and the transfer unit 5 was moved into the processing chamber 14. Note that when processing is performed by introducing a process gas into the processing chamber, the process gas may be introduced into the buffer chamber and connected to the processing chamber after the pressure in the buffer chamber decreases.
- the processing chamber evacuation apparatus 64 uses the same vacuum pump as the buffer chamber high evacuation apparatus 63, and can form a MgO thin film in a highly evacuated state. A procedure when a vacuum processing apparatus of a comparative example having the same configuration is used except that the vacuum evacuation apparatus is different from the above embodiment will be described.
- the first and second degassing chambers 11 and 12 and the buffer chamber 13 are the same as the above embodiment in that degassing is performed by heating the transfer unit 5.
- the structure of the vacuum exhaust apparatus connected to each chamber 11 to 13 and 15 and the pressure when moving to the next vacuum chamber are shown in Table 2 below.
- the carry-in chamber 15 includes a dry pump and a mechanical booster pump, an exhaust unit having a total exhaust speed of 4.5 m 3 / sec, and an exhaust speed of 6.0 m 3 / sec.
- a turbo molecular pump (and a back pressure pump) is connected.
- First, the inside of the carry-in chamber 15 in which the transfer unit 5 is carried is evacuated using an exhaust unit, and the pressure in the carry-in chamber 15 is reduced. The pressure is reduced from atmospheric pressure to 10 Pa, and then the evacuation operation is switched to a turbo molecular pump.
- the loading chamber 15 is evacuated by the turbo molecular pump, and the pressure in the loading chamber 15 is reduced from 10 Pa to 10 ⁇ 1 Pa.
- the transport unit 5 was moved to the first degassing chamber 11.
- the first and second degassing chambers 11 and 12 are connected to high vacuum evacuation systems each composed of a turbo molecular pump and a cold trap (and a back pressure pump) and having a total exhaust speed of about 80 m 3 / sec.
- the carrier unit 5 is heated and degassed while being evacuated by a high vacuum evacuation system, and after the pressure in the first degassing chamber 11 is reduced to the 10 ⁇ 2 Pa level, The first and second degassing chambers 11 and 12 were connected, and the transfer unit 5 was moved into the second degassing chamber 12.
- Evacuated by a second degassing chamber 12 even high vacuum evacuation system performs 10 -2 Pa board heating and degassing while maintaining the pressure, connected to the buffer chamber 13 at 10 -2 Pa base pressure.
- the buffer chamber 13 also uses the same high vacuum pumping system as the first and second degassing chambers 11 and 12 (a turbo molecular pump having a total pumping speed of about 80 m 3 / sec and a cold trap (and a back pressure pump)).
- a vacuum evacuation system is connected, and heating and degassing are performed while evacuating by this high vacuum evacuation system, and the pressure in the buffer chamber 13 is reduced to the 10 ⁇ 3 Pa level and connected to the processing chamber 14. Then, the transport unit 5 was moved.
- the vacuum processing apparatus of the present invention when evacuating from atmospheric pressure, heating and degassing the transport unit 5 and carrying it into a processing chamber in a high vacuum state, the vacuum processing apparatus of the present invention and the vacuum processing apparatus of the comparative example, In the same time, the pressure could be reduced from atmospheric pressure to 10 ⁇ 3 Pa level.
- the operating pressure range of the vacuum pumps of the first and second vacuum pumping systems 61 and 62 of the present invention is that of the vacuum pumps of the buffer chamber vacuum pumping device 63 and the processing chamber vacuum pumping device 64.
- the lowest pressure value within the operating pressure range is the ultimate pressure
- the ultimate pressure of the first and second vacuum exhaust systems 61 and 62 is the same as that of the buffer chamber vacuum exhaust device 63.
- the pressure is higher than the ultimate pressure of the processing chamber evacuation apparatus 64.
- the present invention does not require a turbo molecular pump to be connected to the carry-in chamber 15, and the first and second degassing chambers 11 and 12 do not require a cold trap, so the apparatus cost is low. Maintenance is also easy.
- the first and second degassing chambers 11 and 12 are evacuated by the first and second degassing chamber evacuation devices 61 and 62 including turbomolecular pumps.
- exhaust may be performed with a dry pump and a roots blower pump (mechanical booster pump).
- the present invention is not limited to an in-line type vacuum film forming apparatus, but can be applied to a single wafer type apparatus, a load lock apparatus, and a hatch type apparatus.
- FIG. 5 (a) shows an embodiment of the present invention in that case.
- a loading / unloading chamber 25 for loading and unloading the transfer unit 5 into / from the transfer chamber 29 in which the substrate transfer robot is arranged.
- the first and second degassing chambers 21 and 22 in which heating devices are respectively disposed, and the processing chamber 24 that performs vacuum processing on the processing target of the transfer unit 5 are connected.
- the processing chamber 24 is an apparatus for forming a thin film such as an MgO thin film in a vacuum atmosphere or performing a vacuum processing such as etching in a vacuum atmosphere, and each chamber 21, 22, 24 other than the carry-in / out chamber 25. And 29 are evacuated in advance.
- the evacuation systems 75, 71, 72 connected to the carry-in / out chamber 25 and the first and second degassing chambers 21, 22 include dry pumps 75a, 71a, 72a and mechanical booster pumps 75b, 71b, 72b. Connected, when evacuating from atmospheric pressure, dry pumps 75a, 71a, 72a are directly evacuated, and at a pressure at which the exhaust speed of dry pumps 75a, 71a, 72a decreases, dry pumps 75a, 71a, 72a.
- the mechanical booster pumps 75b, 71b, and 72b evacuate the chambers 25, 21, and 22 while evacuating the back pressure of the mechanical booster pumps 75b, 71b, and 72b. Are connected and placed in a vacuum atmosphere).
- degassing is sequentially performed at a pressure of 1 Pa or more, and after the amount of released gas is reduced, the degassing chamber 21 is carried into the processing chamber 24 via the transfer chamber 29. Is done.
- An evacuation system 73 comprising a turbo molecular pump is connected to the processing chamber 24, and after the inside of the processing chamber 24 is evacuated to 10 ⁇ 3 Pa, vacuum processing is started, and after processing, from the loading / unloading chamber 25. Removed into the atmosphere.
- FIG. 6B shows a vacuum processing apparatus 120 of the prior art, in which a carry-in / out chamber 125, first and second degassing chambers 121 and 122, and a processing chamber 124 are connected to a transfer chamber 129. Yes.
- the chambers 121, 122, 124 and 129 other than the carry-in / out chamber 125 are evacuated in advance.
- the processing chamber 124 and the first and second degassing chambers 121 and 122 are connected to evacuation systems 173, 171 and 172, respectively, each composed of a turbo molecular pump, so that they can be evacuated to a high vacuum. ing.
- the evacuation system connected to the carry-in / out chamber 125 includes a dry pump 175a, a mechanical booster pump 175b, and a turbo molecular pump 175c.
- the inside of the carry-in / out chamber 125 is first evacuated from the atmosphere by the dry pump 175a. Then, after the back pressure is evacuated by the dry pump 175a and the mechanical booster pump 175b is evacuated to a pressure at which the turbo molecular pump 175c can operate, the evacuation by the turbo molecular pump 175c is started. .
- the object to be transported 5 is moved to the first degassing chamber 121, and degassing is sequentially performed in the first and second degassing chambers 121 and 122 while being evacuated by the evacuation systems 171 and 172.
- the pressure is reduced to a pressure for vacuum processing.
- the vacuum processing apparatus 20 of the present invention is the same as the vacuum processing apparatus 120 of this comparative example, and the time for vacuum exhausting to a pressure at which vacuum processing can be started after heating and degassing is the same. Since the vacuum processing apparatus 120 is connected to the loading / unloading chamber 125 and the first and second degassing chambers 121 and 122 in addition to the processing chamber 124, the vacuum processing apparatus 20 according to the present invention is also provided. However, the cost is low and maintenance is easy.
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Abstract
Description
しかし、搬入室を高真空排気する場合、20インチ以上のバルブを介して高真空排気ポンプ(ターボ分子ポンプやクライオポンプ)を搬入室に接続する必要があり、80秒タクトで基板を処理する場合、1ヶ月に27000回以上の開閉頻度となるため、約3ヶ月に1回のオーバーホールが必要になり、バルブのオーバーホール及び故障が装置ダウンタイムの大きな原因になっていた。
従って、MgO成膜装置の価格やランニングコストは高価になり、また、広い設置スペースや設備を必要としており、解決が望まれていた。
フラットパネルディスプレイ大事典,工業調査会,2001年12月25日,第1版,p269,p683-684,p688ー689,p737-738 新版真空ハンドブック,(株)オーム社,平成14年7月1日,p5(1、2項 真空用語)
高真空雰囲気では、圧力P(Pa)、放出ガス量Q(Pa・m3/sec)、有効排気速度S(m3/sec)の間には、P=Q/S の関係がある。放出ガス量Qは、キャリアと基板から放出される吸着ガスの量であるとすると、キャリアと基板を真空雰囲気中で一定温度に加熱して脱ガスした場合、放出ガス量Qの値は時間のみの関数になるとみなしてよい。即ち、加熱脱ガス時の放出ガス量Qは、加熱脱ガス中の周囲の真空雰囲気の圧力には依存しない。
そうであれば、プロセスを行う処理室には高真空雰囲気にできる真空排気装置を接続する必要があっても、加熱脱ガスを行う脱ガス室には、処理室に接続された真空排気装置よりも到達真空度が低い真空排気装置を接続し、従来よりも高い圧力中で加熱脱ガスを行うことができることになる。
また、本発明は、前記脱ガス室用真空排気装置の到達圧力は、前記処理室用真空排気装置の到達圧力よりも高い真空ポンプが用いられた真空処理装置である。
また、本発明は、前記処理室にはMgO蒸着源が配置され、前記MgO蒸着源からMgO蒸気が放出され、前記処理対象物の表面にMgO薄膜が形成される真空処理装置である。
また、本発明は、複数の前記脱ガス室を有し、前記各脱ガス室は直列に接続され、前記処理対象物は前記各脱ガス室で脱ガス処理された後、前記処理室に移動される真空処理装置である。
また、本発明は、前記脱ガス室用真空排気装置は、前記脱ガス室内の圧力を1Pa以上100Pa以下の圧力雰囲気にする排気速度を有し、前記処理室用真空排気装置は前記処理室内の圧力を1Pa未満にする真空排気速度を有する真空処理装置である。
また、本発明は、基板加熱機構を有する脱ガス室と、前記脱ガス室に接続されたバッファ室と、前記バッファ室に接続された処理室とを有し、前記脱ガス室と前記バッファ室と前記処理室は真空雰囲気に置かれ、前記脱ガス室内で加熱されて脱ガス処理された処理対象物が前記バッファ室を通って前記処理室内に搬入され、前記処理室内で真空処理される真空処理装置であって、前記脱ガス室に接続された脱ガス室用真空排気装置の排気速度は、前記バッファ室に接続されたバッファ室用真空排気装置の排気速度よりも小さくされた真空処理装置である。
また、本発明は、前記脱ガス室用真空排気装置の排気速度は、前記処理室に接続された処理室用真空排気装置の排気速度よりも小さくされた真空処理装置である。
また、本発明は、前記脱ガス室用真空排気装置の到達圧力は、前記バッファ室用真空排気装置の到達圧力よりも高い真空ポンプが用いられた真空処理装置である。
また、本発明は、前記処理室にはMgO蒸着源が配置され、前記MgO蒸着源からMgO蒸気が放出され、前記処理対象物の表面にMgO薄膜が形成される真空処理装置である。
また、本発明は、複数の前記脱ガス室を有し、前記各脱ガス室は直列に接続され、前記処理対象物は前記各脱ガス室で脱ガス処理された後、前記バッファ室に移動される真空処理装置である。
また、本発明は、前記脱ガス室用真空排気装置は、前記脱ガス室内の圧力を1Pa以上100Pa以下の圧力雰囲気にする排気速度を有し、前記バッファ室用真空排気装置は前記バッファ室内の圧力を1Pa未満にする真空排気速度を有する真空処理装置である。
また、本発明は、処理対象物をキャリアに装着して搬送ユニットとし、前記搬送ユニットを大気雰囲気中から真空雰囲気中に搬入し、前記搬送ユニットを脱ガス室内で加熱して脱ガス処理した後、バッファ室内に搬入し、バッファ室内の圧力を低下させた後、前記バッファ室と処理室とを接続し、前記搬送ユニットを前記処理室内に搬入し、前記搬送ユニット内の前記処理対象物を真空処理する真空処理方法であって、前記脱ガス室内の圧力を1Pa以上100Pa以下の圧力雰囲気にし、前記処理室内の圧力を1Pa未満にする真空処理方法である。
また、本発明は、前記処理室内でMgO蒸気を発生させ、前記処理対象物表面にMgO薄膜を形成する真空処理方法である。
搬入室を高真空雰囲気にする必要が無いので、搬入室の真空排気系に大型のバルブを設ける必要がない。
図4のグラフから、処理室の前のバッファ室で、処理室に接続できる圧力まで真空排気を行えば、真空排気した搬入室の圧力や、脱ガス室での脱ガスを行う際の圧力は従来の約3倍以上でもよいことがわかる。
この結果、本発明は真空排気系を大幅に削減することが可能になり、装置コストを約5%~10%削減することができた。また、設備電力、装置運転時の電力量、冷却水は約5%削減できた。さらに設置スペースは約3%削減できた。これらに加え、必要ではない真空排気装置を削減することにより、装置全体の信頼性がアップすると同時に定期メンテナンスコストの削減もできる。
7……キャリア
10、20……真空処理装置
11、12、21、22……脱ガス室
13……バッファ室
14、24……処理室
17……冷却室
18……処理対象物
31、32……基板加熱機構
33……バッファ室用加熱機構
35……MgO蒸着源
61、62、71、72……脱ガス室用真空排気装置
63……バッファ室用真空排気装置
この真空処理装置10は、搬入室15と、第一の脱ガス室11と、第二の脱ガス室12と、バッファ室13と、処理室14と、冷却室17と、搬出室16とを有している。 各室15、11~14、、17、16は、この順序で配置され、ゲートバルブ51~56によって直列に接続されている。
開始後は、各真空排気装置61~64、67を動作させておき、第一、第二の脱ガス室11、12とバッファ室13と処理室14と冷却室17は真空排気を継続して行う。
搬入室15の内部が約100Paの所定圧力に到達したところで、ゲートバルブ51を開けて一枚の搬送ユニット5を搬入室15から第一の脱ガス室11の内部に移動させる。
ここでは、搬送ユニット5を、予め設定された第二の脱ガス処理時間の間、第二の脱ガス室12の内部で脱ガス処理を行う。
バッファ室用真空排気装置63は高真空排気ポンプであり、その排気速度S3は、第一、第二の真空排気装置61、62の真空排気速度S1、S2よりも大きく、ゲートバルブ53を閉じ、バッファ室用真空排気装置63によって真空排気すると、バッファ室13内の圧力は急速に低下する。
処理室14内に未処理の搬送ユニットを順次搬入すると、複数の処理対象物に、連続的に真空処理(MgO薄膜の形成)を行うことができる。
搬出室16内に真空処理済みの搬送ユニット5が所定枚数配置された後、ゲートバルブ56を閉じた状態で大気との間の扉58を開け、搬送ユニット5を大気に取り出す。
横軸の原点0は、第一の脱ガス室11内で脱ガス処理を開始した時刻を示しており、符号t1は、搬送ユニット5を第一の脱ガス室11から第二の脱ガス室12に移動させた時刻を示し、符号t2は第二の脱ガス室12からバッファ室13に移動させた時刻を示し、符号t3は、バッファ室13から処理室14に移動させた時刻を示している。
脱ガスの際に搬送ユニット5を同じ温度に加熱する場合は、吸着ガスの放出速度は脱ガス時間に依存し、放出速度が同じ場合の真空雰囲気の圧力は真空排気系の有効排気速度の大きさに依存するから、高い圧力で脱ガスを行う本発明の場合も、高真空雰囲気で脱ガスを行う従来技術の場合も、バッファ室13内での圧力は同じになる。
図3の符号110は、本発明方法に用いることができる真空処理装置であり、真空槽114を有している。
真空槽114の内部には基板加熱機構117が配置されており、基板加熱機構117には処理対象物118が対向して設置されている。
脱ガス中の放出ガスはクライオポンプに吸着しないから、クライオポンプを使用して脱ガス処理中も高真空にしていた従来技術の場合に比べ、処理時間を長くすることなく、クライオポンプの再生間隔を長くすることができる。
図1の真空処理装置10の、各真空排気装置61~63、65の構成と、それら真空排気装置61~63、65の排気速度と、搬送ユニット5を次の真空槽に移動させるときの真空槽内部の圧力とを次の表1に示す。
搬入室用真空排気装置65は、ドライポンプとメカニカルブースタポンプとから成り、合計排気速度S1が0.5m3/secである排気ユニットである。
上記実施例とは真空排気装置が異なる他は同じ構成の比較例の真空処理装置を用いたときの手順を説明する。
バッファ室13にも、第一、第二の脱ガス室11、12と同じ高真空排気系(合計排気速度約80m3/secのターボ分子ポンプとコールドトラップ(及び背圧ポンプ)を使用した高真空排気系)が接続されており、この高真空排気系によって真空排気しながら加熱・脱ガスを行い、バッファ室13の圧力を10-3Pa台まで低下させた状態で、処理室14に接続し、搬送ユニット5を移動させた。
なお、本実施例では、第一、第二の脱ガス室11、12を、ターボ分子ポンプから成る第一、第二の脱ガス室用真空排気装置61、62で真空排気したが、ターボ分子ポンプに替え、ドライポンプとルーツブロアポンプ(メカニカルブースタポンプ)とで排気してもよい。また、本発明はインライン式の真空成膜装置に限らず、枚葉式装置、ロードロック装置及びハッチ式装置にも適用できる。
処理室24にはターボ分子ポンプから成る真空排気系73が接続されており、処理室24内が10-3Paに真空排気された後、真空処理が開始され、処理後、搬入搬出室25から大気中に取り出される。
同図(b)は、従来技術の真空処理装置120であり、搬送室129に、搬入搬出室125と、第一、第二の脱ガス室121、122と、処理室124とが接続されている。搬入搬出室125以外の各室121、122,124及び129は予め真空排気されている。また、処理室124と第一、第二の脱ガス室121、122には、ターボ分子ポンプから成る真空排気系173、171、172がそれぞれ接続されており、高真空に真空排気できるようにされている。
Claims (13)
- 基板加熱機構を有する脱ガス室と、基板の真空処理を行う処理室とを有し、
前記脱ガス室と前記処理室とは真空雰囲気に置かれ、前記脱ガス室内で加熱されて脱ガス処理された処理対象物が前記処理室内に搬入され、前記処理室内で真空処理される真空処理装置であって、
前記脱ガス室に接続された脱ガス室用真空排気装置の排気速度は、前記処理室に接続された処理室用真空排気装置の排気速度よりも小さくされた真空処理装置。 - 前記脱ガス室用真空排気装置の到達圧力は、前記処理室用真空排気装置の到達圧力よりも高い真空ポンプが用いられた請求項1記載の真空処理装置。
- 前記処理室にはMgO蒸着源が配置され、前記MgO蒸着源からMgO蒸気が放出され、前記処理対象物の表面にMgO薄膜が形成される請求項1記載の真空処理装置。
- 複数の前記脱ガス室を有し、前記各脱ガス室は直列に接続され、前記処理対象物は前記各脱ガス室で脱ガス処理された後、前記処理室に移動される請求項1記載の真空処理装置。
- 前記脱ガス室用真空排気装置は、前記脱ガス室内の圧力を1Pa以上100Pa以下の圧力雰囲気にする排気速度を有し、
前記処理室用真空排気装置は前記処理室内の圧力を1Pa未満にする真空排気速度を有する請求項1記載の真空処理装置。 - 基板加熱機構を有する脱ガス室と、前記脱ガス室に接続されたバッファ室と、前記バッファ室に接続された処理室とを有し、前記脱ガス室と前記バッファ室と前記処理室は真空雰囲気に置かれ、前記脱ガス室内で加熱されて脱ガス処理された処理対象物が前記バッファ室を通って前記処理室内に搬入され、前記処理室内で真空処理される真空処理装置であって、
前記脱ガス室に接続された脱ガス室用真空排気装置の排気速度は、前記バッファ室に接続されたバッファ室用真空排気装置の排気速度よりも小さくされた真空処理装置。 - 前記脱ガス室用真空排気装置の排気速度は、前記処理室に接続された処理室用真空排気装置の排気速度よりも小さくされた請求項6記載の真空処理装置。
- 前記脱ガス室用真空排気装置の到達圧力は、前記バッファ室用真空排気装置の到達圧力よりも高い真空ポンプが用いられた請求項6記載の真空処理装置。
- 前記処理室にはMgO蒸着源が配置され、前記MgO蒸着源からMgO蒸気が放出され、前記処理対象物の表面にMgO薄膜が形成される請求項6記載の真空処理装置。
- 複数の前記脱ガス室を有し、前記各脱ガス室は直列に接続され、前記処理対象物は前記各脱ガス室で脱ガス処理された後、前記バッファ室に移動される請求項6記載の真空処理装置。
- 前記脱ガス室用真空排気装置は、前記脱ガス室内の圧力を1Pa以上100Pa以下の圧力雰囲気にする排気速度を有し、
前記バッファ室用真空排気装置は前記バッファ室内の圧力を1Pa未満にする真空排気速度を有する請求項6記載の真空処理装置。 - 処理対象物をキャリアに装着して搬送ユニットとし、前記搬送ユニットを大気雰囲気中から真空雰囲気中に搬入し、前記搬送ユニットを脱ガス室内で加熱して脱ガス処理した後、バッファ室内に搬入し、バッファ室内の圧力を低下させた後、前記バッファ室と処理室とを接続し、前記搬送ユニットを前記処理室内に搬入し、前記搬送ユニット内の前記処理対象物を真空処理する真空処理方法であって、
前記脱ガス室内の圧力を1Pa以上100Pa以下の圧力雰囲気にし、前記処理室内の圧力を1Pa未満にする真空処理方法。 - 前記処理室内でMgO蒸気を発生させ、前記処理対象物表面にMgO薄膜を形成する請求項12記載の真空処理方法。
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JP (1) | JP5583580B2 (ja) |
KR (1) | KR101252948B1 (ja) |
CN (1) | CN102112646A (ja) |
DE (1) | DE112009001885T5 (ja) |
TW (1) | TWI452165B (ja) |
WO (1) | WO2010016484A1 (ja) |
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JP2018031065A (ja) * | 2016-08-26 | 2018-03-01 | トヨタ自動車株式会社 | プラズマ成膜方法 |
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DE102011004441B4 (de) * | 2011-02-21 | 2016-09-01 | Ctf Solar Gmbh | Verfahren und Vorrichtung zur Beschichtung von auf Transformationstemperatur temperierten Glassubstraten |
DE102017001093A1 (de) | 2016-04-07 | 2017-10-26 | Entex Rust & Mitschke Gmbh | Entgasen bei der Extrusion von Kunststoffen mit Filterscheiben aus Sintermetall |
DE102015001167A1 (de) | 2015-02-02 | 2016-08-04 | Entex Rust & Mitschke Gmbh | Entgasen bei der Extrusion von Kunststoffen |
DE102017004563A1 (de) | 2017-03-05 | 2018-09-06 | Entex Rust & Mitschke Gmbh | Entgasen beim Extrudieren von Polymeren |
DE102018001412A1 (de) | 2017-12-11 | 2019-06-13 | Entex Rust & Mitschke Gmbh | Entgasen beim Extrudieren von Stoffen, vorzugsweise von Kunststoffen |
DE102018115410A1 (de) * | 2018-06-27 | 2020-01-02 | VON ARDENNE Asset GmbH & Co. KG | Vakuumanordnung und Verfahren |
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Publication number | Publication date |
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DE112009001885T5 (de) | 2011-05-19 |
KR20110025233A (ko) | 2011-03-09 |
JPWO2010016484A1 (ja) | 2012-01-26 |
US20110143033A1 (en) | 2011-06-16 |
TWI452165B (zh) | 2014-09-11 |
CN102112646A (zh) | 2011-06-29 |
JP5583580B2 (ja) | 2014-09-03 |
KR101252948B1 (ko) | 2013-04-15 |
TW201020335A (en) | 2010-06-01 |
US20120114854A1 (en) | 2012-05-10 |
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