WO2010016246A1 - 弾性波素子とこれを用いた電子機器 - Google Patents
弾性波素子とこれを用いた電子機器 Download PDFInfo
- Publication number
- WO2010016246A1 WO2010016246A1 PCT/JP2009/003734 JP2009003734W WO2010016246A1 WO 2010016246 A1 WO2010016246 A1 WO 2010016246A1 JP 2009003734 W JP2009003734 W JP 2009003734W WO 2010016246 A1 WO2010016246 A1 WO 2010016246A1
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- WIPO (PCT)
- Prior art keywords
- piezoelectric body
- wave
- idt electrode
- dielectric layer
- angle
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/0222—Details of interface-acoustic, boundary, pseudo-acoustic or Stonely wave devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
- H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
- H03H9/14538—Formation
- H03H9/14541—Multilayer finger or busbar electrode
Definitions
- the present invention relates to an acoustic wave device and an electronic device using the same.
- FIGS. 9A and 9B A conventional acoustic wave device will be described with reference to FIGS. 9A and 9B.
- FIG. 9A is a schematic cross-sectional view of a conventional acoustic wave device.
- FIG. 9B is a diagram showing a range in which the electromechanical coupling coefficient of the Rayleigh wave becomes equal to or less than a predetermined value when the substrate cut angle of the piezoelectric body in the conventional elastic wave device is changed.
- the conventional elastic wave device 1 includes a piezoelectric body 2 made of lithium niobate and an IDT electrode 3 disposed on the piezoelectric body 2.
- the first dielectric layer 6 formed of a silicon oxide film is formed to have the same thickness as the IDT electrode 3 in the remaining area except the area where the IDT electrode 3 is formed on the piezoelectric body 2.
- the second dielectric layer 7 made of a silicon oxide film formed to cover the IDT electrode 3 and the first dielectric layer 6.
- the normalized film thickness of the second dielectric layer 7 is in the range of 0.15 ⁇ to 0.40 ⁇ , and the wedge of the substrate cut angle (0 ° ⁇ 5 °, ⁇ , ⁇ ) of the piezoelectric body 2 is 10 ° to 30.
- the film thickness of the IDT electrode is, for example, 0.06 ⁇ , ⁇ and ⁇ ⁇ are within the range of the hatched area shown in FIG. 9B.
- Such a conventional elastic wave device 1 sets the substrate cut angle of the piezoelectric body 2, the film thickness of the IDT electrode 3, the film thickness of the second dielectric layer 7, etc. By reducing the electromechanical coupling coefficient, the spurious due to the Rayleigh wave was suppressed.
- this conventional elastic wave device 1 is a boundary wave device that confines a main wave inside the device, conditions such that the film thickness of the IDT electrode 3 and the film thickness of the dielectric layer can suppress Stoneley waves due to manufacturing variations. Frequent departure from Due to this manufacturing variation, the spurious due to the Stoneley wave is generated and the device characteristics are degraded.
- the present invention provides an acoustic wave device in which degradation of device characteristics is suppressed even if manufacturing variations occur.
- the elastic wave device of the present invention comprises a piezoelectric body, an IDT electrode disposed on the piezoelectric body, a first dielectric layer disposed on the piezoelectric body so as to cover the IDT electrode, and a first dielectric layer. And a second dielectric layer provided on top of the body layer for propagating a shear wave faster than the velocity of the shear wave propagating through the first dielectric layer.
- the substrate cut angle of the piezoelectric body can be displayed in Euler's angle ( ⁇ , ⁇ , ⁇ When ⁇ ), ⁇ ⁇ 0 °, ⁇ 0 ⁇ ⁇ , ⁇ ⁇ 0 ⁇ ⁇ ⁇ .
- the power flow angle of the Stoneley wave is not less than a predetermined value while the power flow angle of the SH wave which is the main wave is not more than a predetermined value by shifting the substrate cut angle ⁇ of the piezoelectric material from 0 °.
- the film thickness of the IDT electrode, the film thickness of the dielectric layer, etc. deviate from the conditions that can suppress Stoneley waves, and the power flow angle of Stoneley waves becomes slightly smaller than a predetermined value. Even in this case, the deterioration of the element characteristics can be suppressed to an acceptable level.
- FIG. 1 is a schematic cross-sectional view of an acoustic wave device according to a first embodiment of the present invention.
- FIG. 2 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 3 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 4 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 5 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 6 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 7 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 8 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- FIG. 9A is a schematic cross-sectional view of a conventional acoustic wave device.
- FIG. 9B is a diagram showing the range of the electromechanical coupling coefficient of the Rayleigh wave in the conventional elastic wave device.
- Embodiment 1 The acoustic wave device according to the first embodiment of the present invention will be described below with reference to the drawings.
- FIG. 1 is a schematic cross-sectional view of elastic wave element 8 in accordance with the first exemplary embodiment.
- the elastic wave element 8 is disposed on the piezoelectric body 9, an IDT (Inter-Digital Transducer) electrode 10 disposed on the piezoelectric body 9, and the piezoelectric body 9 so as to cover the IDT electrode 10.
- a second dielectric layer 12 provided on top of the first dielectric layer 11.
- the piezoelectric body 9 is formed of, for example, lithium niobate, lithium tantalate, or potassium niobate.
- the substrate cut angle of the piezoelectric body 9 is ⁇ ⁇ 0 °, ⁇ ⁇ 0 °, ⁇ ⁇ 0 ° when ( ⁇ , ⁇ , ⁇ ) in Euler angle display.
- the substrate cut angle of the piezoelectric body 9 is 1.3 ° ⁇ ⁇ 5.5 ° and ⁇ 70 ° ⁇ ⁇ 60 ° and ⁇ 3.4 ° ⁇ ⁇ 0 °.
- the IDT electrode 10 is formed of, for example, a single metal made of aluminum, copper, silver, gold, titanium, tungsten, platinum, or chromium, or an alloy containing any of these metals as a main component.
- the first dielectric layer 11 is made of, for example, silicon oxide, but any medium may be used as long as it has a frequency temperature characteristic reverse to that of the piezoelectric body 9. Thereby, frequency temperature characteristics can be improved.
- the second dielectric layer 12 is formed of a medium in which a shear wave having a speed higher than the velocity of the shear wave propagating through the first dielectric layer 11 is propagated.
- a shear wave having a speed higher than the velocity of the shear wave propagating through the first dielectric layer 11 is propagated.
- diamond, silicon, silicon nitride, aluminum nitride or aluminum oxide is used.
- the film thickness of the second dielectric layer 12 is 0.8 or more times the wavelength ⁇ of the SH wave which is the main wave. Thereby, the main wave can be confined in the elastic wave element 8.
- the film thickness of the second dielectric layer 12 is desirably equal to or more than the wavelength ⁇ of the SH wave which is the main wave.
- the power flow angle of the Stoney wave is set to a predetermined value or more while the power flow angle of the SH wave as the main wave is set to a predetermined value or less.
- the power flow angle is an angle formed by the direction of the phase velocity propagating and the direction of the group velocity when a wave is excited by the IDT electrode 10.
- the film thickness of the IDT electrode 10 the film thickness of the dielectric layer, etc. are out of the conditions that can suppress Stoneley waves, and the power flow angle of Stoneley waves is slightly smaller than a predetermined value. Even if it becomes, deterioration of the element characteristics can be suppressed to an acceptable level. This is explained below.
- FIG. 2 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention.
- the vertical axis indicates PFA (power flow angle) (unit: deg) of SH wave which is a main wave or PFA (power flow angle) (unit: deg) of a Stoneley wave which is an unnecessary wave.
- PFA power flow angle
- unit: deg of SH wave which is a main wave
- PFA power flow angle
- Stoneley wave which is an unnecessary wave.
- lithium niobate is used as the piezoelectric body 9
- copper having a normalized film thickness of 0.09 ⁇ ( ⁇ is the wavelength of the SH wave) is used as the IDT electrode 10
- the first dielectric layer 11 is used.
- silicon nitride having a normalized film thickness ⁇ is used as the second dielectric layer 12.
- the SH wave which is the main wave it is understood that by changing ⁇ , the PFA of the SH wave which is the main wave changes from 0 ° until 0 °.
- a wedge that makes the PFA of the SH wave that is the main wave be 0 ° it is possible to suppress the Q value deterioration of the SH wave that is the main wave.
- Q value degradation is suppressed because the absolute value of the power flow angle of SH wave excited by the IDT electrode 10 is less than 0.3 °.
- elastic wave element 8 uses a wedge whose PFA of SH wave which is the main wave is 0 ° by setting substrate cut angle ⁇ of piezoelectric body 9 to a value other than 0 °. It is possible to shift the PFA of the Stoneley wave, which is an unnecessary wave, from 0 °.
- the absolute value of the power flow angle of the SH wave excited to the IDT electrode 10 is less than 0.3 °, and the power flow angle of the Stoneley wave excited to the IDT electrode 10
- the range of the substrate cut angle of the piezoelectric body 9 in which the absolute value is 0.3 ° or more will be described with reference to FIGS.
- FIGS. 3 to 6 are explanatory views of the features of the acoustic wave device according to the first embodiment of the present invention.
- the substrate cut angle of the piezoelectric body 9 in which the absolute value of the power flow angle of the SH wave is less than 0.3 ° and the absolute value of the power flow angle of the Stoneley wave is 0.3 ° or more Indicate the range.
- the substrate cut angle of the piezoelectric body 9 is represented by ( ⁇ , ⁇ , ⁇ ) in Euler angle display
- FIG. 3 is ⁇ of ⁇ 75 °
- FIG. 4 is ⁇ of ⁇ 70 °
- FIG. 6 the possible ranges of ⁇ and ⁇ are shown by oblique lines when the angle ⁇ is set to ⁇ 60 °.
- lithium niobate is used as the piezoelectric body 9
- copper having a normalized film thickness of 0.09 ⁇ ( ⁇ is the wavelength of the SH wave) is used as the IDT electrode 10
- a normalized film is used as the first dielectric layer 11.
- Silicon oxide having a thickness of 0.2 ⁇ was used, and silicon nitride having a normalized film thickness ⁇ was used as the second dielectric layer 12.
- the absolute value of the power flow angle of the SH wave excited by the IDT electrode 10 is less than 0.3 °, Also, the absolute value of the power flow angle of the Stoneley wave excited to the IDT electrode 10 is 0.3 ° or more.
- the substrate cut angle of the piezoelectric body 9 of the elastic wave element 8 satisfies the following conditions.
- FIG. 7 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention. That is, when the normalized film thickness of the IDT electrode 10 is 0.08 ⁇ ( ⁇ is the wavelength of the SH wave) and 0.12 ⁇ , the absolute value of the power flow angle of the SH wave is less than 0.3 °, and The range of the substrate cut angle of the piezoelectric body 9 in which the absolute value of the power flow angle of the Stoneley wave is 0.3 ° or more is shown.
- FIG. 7 a region between two broken lines connecting triangles indicates a case where the film thickness of the IDT electrode 10 is 0.08 ⁇ , and a region between two broken lines connecting circles is a film of the IDT electrode 10. The case where the thickness is 0.12 ⁇ is shown.
- the elastic wave element 8 shown in FIG. 7 has the same configuration as the elastic wave element 8 shown in FIG. 5 except for the film thickness of the IDT electrode 10.
- FIG. 8 is an explanatory view of the feature of the acoustic wave device according to the first embodiment of the present invention. That is, the absolute value of the power flow angle of the SH wave is 0.3 ° when the normalized film thickness of the first dielectric layer 11 is 0.1 ⁇ ( ⁇ is the wavelength of the SH wave) and 0.4 ⁇ . The range of the substrate cut angle of the piezoelectric body 9 where the absolute value of the power flow angle of the Stoneley wave is less than 0.3 ° is shown.
- FIG. 8 a region between two broken lines connecting triangles indicates the case where the film thickness of the first dielectric layer 11 is 0.4 ⁇ , and a region between two broken lines connecting circles is the first. The case where the film thickness of the first dielectric layer 11 is 0.1 ⁇ is shown.
- the elastic wave element 8 shown in FIG. 8 has the same configuration as the elastic wave element 8 shown in FIG. 5 except for the thickness of the first dielectric layer 11.
- the piezoelectric body 9 in which the absolute value of the power flow angle of the SH wave is less than 0.3 ° and the absolute value of the power flow angle of the Stoneley wave is 0.3 ° or more
- the range of the substrate cut angle also depends on the film thickness and density of the IDT electrode 10 and the film thickness of the first dielectric layer 11.
- F1 represents a correction function of the upper limit of ⁇ satisfying the above condition with respect to ⁇
- F2 represents a correction function of the lower limit of ⁇ satisfying the above condition with respect to ⁇ .
- the elastic wave element before correction is the same as the elastic wave element 8 as described above, that is, the standard of the IDT electrode 10 made of copper and having a normalized film thickness of 0.2 ⁇ for the first dielectric layer 11 made of silicon oxide. It is the elastic wave element 8 having a thickness of 0.09 ⁇ .
- the film thickness of the IDT electrode 10 is h
- the ratio of the density of the IDT electrode 10 to the density of copper is a
- the film thickness of the first dielectric layer 11 is H.
- g1 ( ⁇ ), g2 ( ⁇ ), h1 ( ⁇ ) and h2 ( ⁇ ) are represented by the following (formula 3), (formula 4), (formula 5) and (formula 6).
- the above g1 ( ⁇ ) and g2 ( ⁇ ) are correction functions showing the dependence on the film thickness and density of the IDT electrode 10
- the above h1 ( ⁇ ) and h2 ( ⁇ ) are the first dielectric It is a correction function showing the dependency on the film thickness of the layer 11.
- the elastic wave element 8 according to the first embodiment may be applied to a resonator (not shown), or may be applied to a filter (not shown) such as a ladder type filter or a DMS filter.
- a filter such as a ladder type filter or a DMS filter.
- an electronic apparatus comprising the acoustic wave device 8, the filter, a semiconductor integrated circuit device (not shown) connected to the filter, and a reproduction device connected to the semiconductor integrated circuit device (not shown) You may apply. This can improve the communication quality in the resonator, the filter, and the electronic device.
- the elastic wave device according to the present invention has a feature of suppressing deterioration of device characteristics, and is applicable to electronic devices such as mobile phones.
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Abstract
Description
以下、本発明の実施の形態1における弾性波素子について図面を参照しながら説明する。
-0.5°≦φ<0.5°かつ -2.2°≦ψ<-1.4°
または
0.5°≦φ<1.5°かつ -2.4°≦ψ<-0.8°
または
1.5°≦φ<2.5°かつ -2.6°≦ψ<-0.2°
または
2.5°≦φ<3.5°かつ -2.8°≦ψ<0.3°
または
3.5°≦φ<4.5°かつ -3.1°≦ψ<0.8°
または
4.5°≦φ<5.5°かつ -3.3°≦ψ<1.3°
ii)-72.5°≦θ<-67.5°の場合
-0.5°≦φ<0.5°かつ -2.5°≦ψ<-1.7°
または
0.5°≦φ<1.5°かつ -2.6°≦ψ<-0.9°
または
1.5°≦φ<2.5°かつ -2.7°≦ψ<-0.1°
または
2.5°≦φ<3.5°かつ -2.7°≦ψ<0.7°
または
3.5°≦φ<4.5°かつ -2.9°≦ψ<1.3°
または
4.5°≦φ<5.5°かつ -3°≦ψ<2°
iii)-67.5°≦θ<-62.5°の場合
-0.5°≦φ<0.5°かつ -3.2°≦ψ<-2.2°
または
0.5°≦φ<1.5°かつ -3°≦ψ<-0.9°
または
1.5°≦φ<2.5°かつ -2.7°≦ψ<0.4°
または
2.5°≦φ<3.5°かつ -2.5°≦ψ<1.5°
または
3.5°≦φ<4.5°かつ -2.4°≦ψ<2.6°
または
4.5°≦φ<5.5°かつ -2.4°≦ψ<3.3°
iv)-62.5°≦θ<-57.5°の場合
-0.5°≦φ<0.5°かつ -5.2°≦ψ<-4.1°
または
0.5°≦φ<1.5°かつ -4°≦ψ<-0.8°
または
1.5°≦φ<2.5°かつ -2.8°≦ψ<2.1°
または
2.5°≦φ<3.5°かつ -1.8°≦ψ<4.1°
または
3.5°≦φ<4.5°かつ -1.1°≦ψ<5.5°
または
4.5°≦φ<5.5°かつ -0.9°≦ψ<6.2°
上記の条件を満たすとき、主要波であるSH波のパワーフロー角の絶対値が0.3°未満となり、かつ、ストンリー波のパワーフロー角の絶対値が0.3°以上となり、SH波の伝搬ロスを低減することができると共に、ストンリー波のスプリアスを抑制できる。
-0.5°≦φ<0.5°かつ -2.2°+F2≦ψ<-1.4°+F1
または
0.5°≦φ<1.5°かつ -2.4°+F2≦ψ<-0.8°+F1
または
1.5°≦φ<2.5°かつ -2.6°+F2≦ψ<-0.2°+F1
または
2.5°≦φ<3.5°かつ -2.8°+F2≦ψ<0.3°+F1
または
3.5°≦φ<4.5°かつ -3.1°+F2≦ψ<0.8°+F1
または
4.5°≦φ<5.5°かつ -3.3°+F2≦ψ<1.3°+F1
ii)-72.5°≦θ<-67.5°の場合
-0.5°≦φ<0.5°かつ -2.5°+F2≦ψ<-1.7°+F1
または
0.5°≦φ<1.5°かつ -2.6°+F2≦ψ<-0.9°+F1
または
1.5°≦φ<2.5°かつ -2.7°+F2≦ψ<-0.1°+F1
または
2.5°≦φ<3.5°かつ -2.7°+F2≦ψ<0.7°+F1
または
3.5°≦φ<4.5°かつ -2.9°+F2≦ψ<1.3°+F1
または
4.5°≦φ<5.5°かつ -3°+F2≦ψ<2°+F1
iii)-67.5°≦θ<-62.5°の場合
-0.5°≦φ<0.5°かつ -3.2°+F2≦ψ<-2.2°+F1
または
0.5°≦φ<1.5°かつ -3°+F2≦ψ<-0.9°+F1
または
1.5°≦φ<2.5°かつ -2.7°+F2≦ψ<0.4°+F1
または
2.5°≦φ<3.5°かつ -2.5°+F2≦ψ<1.5°+F1
または
3.5°≦φ<4.5°かつ -2.4°+F2≦ψ<2.6°+F1
または
4.5°≦φ<5.5°かつ -2.4°+F2≦ψ<3.3°+F1
iv)-62.5°≦θ<-57.5°の場合
-0.5°≦φ<0.5°かつ -5.2°+F2≦ψ<-4.1°+F1
または
0.5°≦φ<1.5°かつ -4°+F2≦ψ<-0.8°+F1
または
1.5°≦φ<2.5°かつ -2.8°+F2≦ψ<2.1°+F1
または
2.5°≦φ<3.5°かつ -1.8°+F2≦ψ<4.1°+F1
または
3.5°≦φ<4.5°かつ -1.1°+F2≦ψ<5.5°+F1
または
4.5°≦φ<5.5°かつ -0.9°+F2≦ψ<6.2°+F1
上記の条件を満たすとき、主要波であるSH波のパワーフロー角の絶対値が0.3°未満となり、かつ、ストンリー波のパワーフロー角の絶対値が0.3°以上となり、SH波の伝搬ロスを低減することができると共に、ストンリー波のスプリアスを抑制できる。
9 圧電体
10 IDT電極
11 第1の誘電体層
12 第2の誘電体層
Claims (6)
- 圧電体と、
前記圧電体の上に配置されたIDT電極と、
前記圧電体の上に前記IDT電極を覆うように配置された第1の誘電体層と、
前記第1の誘電体層の上部に設けられて第1の誘電体層を伝搬する横波の速度よりも速く横波が伝搬する第2の誘電体層と、を備え、
前記第2の誘電体層の膜厚は前記IDT電極で励振されるSH波の波長λの0.8倍より大きく、
前記圧電体の基板カット角をオイラー角表示で(φ,θ,ψ)としたとき、
φ≠0°,θ≠0°,ψ≠0°である
弾性波素子。 - 前記圧電体の基板カット角は、前記IDT電極に励振されるSH波のパワーフロー角の絶対値が0.3°未満となり、かつ、前記IDT電極に励振されるストンリー波のパワーフロー角の絶対値が0.3°以上となる値である
請求項1に記載の弾性波素子。 - 前記圧電体は、ニオブ酸リチウムから形成され、
前記圧電体の基板カット角をオイラー角表示で(φ,θ,ψ)としたとき、
-0.5°≦φ<5.5°
かつ
-77.5°≦θ<-57.5°
かつ
-5.2°≦ψ<6.2°
を満たす
請求項1に記載の弾性波素子。 - 前記圧電体は、ニオブ酸リチウムから形成され、
前記圧電体の基板カット角をオイラー角表示で(φ,θ,ψ)としたとき、
i)-77.5°≦θ<-72.5°の場合
-0.5°≦φ<0.5°かつ -2.2°≦ψ<-1.4°
または
0.5°≦φ<1.5°かつ -2.4°≦ψ<-0.8°
または
1.5°≦φ<2.5°かつ -2.6°≦ψ<-0.2°
または
2.5°≦φ<3.5°かつ -2.8°≦ψ<0.3°
または
3.5°≦φ<4.5°かつ -3.1°≦ψ<0.8°
または
4.5°≦φ<5.5°かつ -3.3°≦ψ<1.3°
ii)-72.5°≦θ<-67.5°の場合
-0.5°≦φ<0.5°かつ -2.5°≦ψ<-1.7°
または
0.5°≦φ<1.5°かつ -2.6°≦ψ<-0.9°
または
1.5°≦φ<2.5°かつ -2.7°≦ψ<-0.1°
または
2.5°≦φ<3.5°かつ -2.7°≦ψ<0.7°
または
3.5°≦φ<4.5°かつ -2.9°≦ψ<1.3°
または
4.5°≦φ<5.5°かつ -3°≦ψ<2°
iii)-67.5°≦θ<-62.5°の場合
-0.5°≦φ<0.5°かつ -3.2°≦ψ<-2.2°
または
0.5°≦φ<1.5°かつ -3°≦ψ<-0.9°
または
1.5°≦φ<2.5°かつ -2.7°≦ψ<0.4°
または
2.5°≦φ<3.5°かつ -2.5°≦ψ<1.5°
または
3.5°≦φ<4.5°かつ -2.4°≦ψ<2.6°
または
4.5°≦φ<5.5°かつ -2.4°≦ψ<3.3°
iv)-62.5°≦θ<-57.5°の場合
-0.5°≦φ<0.5°かつ -5.2°≦ψ<-4.1°
または
0.5°≦φ<1.5°かつ -4°≦ψ<-0.8°
または
1.5°≦φ<2.5°かつ -2.8°≦ψ<2.1°
または
2.5°≦φ<3.5°かつ -1.8°≦ψ<4.1°
または
3.5°≦φ<4.5°かつ -1.1°≦ψ<5.5°
または
4.5°≦φ<5.5°かつ -0.9°≦ψ<6.2°
を満たす請求項1に記載の弾性波素子。 - 前記圧電体は、ニオブ酸リチウムから形成され、
前記圧電体の基板カット角をオイラー角表示で(φ,θ,ψ)とし、
前記IDT電極の膜厚をh、前記IDT電極の密度の銅の密度に対する比をa、前記第1の誘電体層11の膜厚をHとし、
補正関数F1,F2を
前記g1(φ)、前記g2(φ)、前記h1(φ)、前記h2(φ)を
i)-77.5°≦θ<-72.5°の場合
-0.5°≦φ<0.5°かつ -2.2°+F2≦ψ<-1.4°+F1
または
0.5°≦φ<1.5°かつ -2.4°+F2≦ψ<-0.8°+F1
または
1.5°≦φ<2.5°かつ -2.6°+F2≦ψ<-0.2°+F1
または
2.5°≦φ<3.5°かつ -2.8°+F2≦ψ<0.3°+F1
または
3.5°≦φ<4.5°かつ -3.1°+F2≦ψ<0.8°+F1
または
4.5°≦φ<5.5°かつ -3.3°+F2≦ψ<1.3°+F1
ii)-72.5°≦θ<-67.5°の場合
-0.5°≦φ<0.5°かつ -2.5°+F2≦ψ<-1.7°+F1
または
0.5°≦φ<1.5°かつ -2.6°+F2≦ψ<-0.9°+F1
または
1.5°≦φ<2.5°かつ -2.7°+F2≦ψ<-0.1°+F1
または
2.5°≦φ<3.5°かつ -2.7°+F2≦ψ<0.7°+F1
または
3.5°≦φ<4.5°かつ -2.9°+F2≦ψ<1.3°+F1
または
4.5°≦φ<5.5°かつ -3°+F2≦ψ<2°F1
iii)-67.5°≦θ<-62.5°の場合
-0.5°≦φ<0.5°かつ -3.2°+F2≦ψ<-2.2°+F1
または
0.5°≦φ<1.5°かつ -3°+F2≦ψ<-0.9°+F1
または
1.5°≦φ<2.5°かつ -2.7°+F2≦ψ<0.4°+F1
または
2.5°≦φ<3.5°かつ -2.5°+F2≦ψ<1.5°+F1
または
3.5°≦φ<4.5°かつ -2.4°+F2≦ψ<2.6°+F1
または
4.5°≦φ<5.5°かつ -2.4°+F2≦ψ<3.3°+F1
iv)-62.5°≦θ<-57.5°の場合
-0.5°≦φ<0.5°かつ -5.2°+F2≦ψ<-4.1°+F1
または
0.5°≦φ<1.5°かつ -4°+F2≦ψ<-0.8°+F1
または
1.5°≦φ<2.5°かつ -2.8°+F2≦ψ<2.1°+F1
または
2.5°≦φ<3.5°かつ -1.8°+F2≦ψ<4.1°+F1
または
3.5°≦φ<4.5°かつ -1.1°+F2≦ψ<5.5°+F1
または
4.5°≦φ<5.5°かつ -0.9°+F2≦ψ<6.2°+F1
を満たす
請求項1に記載の弾性波素子。 - 請求項1に記載の弾性波素子と、
前記弾性波素子に接続された半導体集積回路素子と、を備えた
電子機器。
Priority Applications (2)
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US13/056,813 US20110133858A1 (en) | 2008-08-07 | 2009-08-05 | Elastic wave element and electronic device using the same |
JP2010523760A JPWO2010016246A1 (ja) | 2008-08-07 | 2009-08-05 | 弾性波素子とこれを用いた電子機器 |
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JP2008-203979 | 2008-08-07 | ||
JP2008-294122 | 2008-11-18 | ||
JP2008294122 | 2008-11-18 |
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US (1) | US20110133858A1 (ja) |
JP (1) | JPWO2010016246A1 (ja) |
WO (1) | WO2010016246A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998052279A1 (fr) * | 1997-05-12 | 1998-11-19 | Hitachi, Ltd. | Dispositif a onde elastique |
WO2001029964A1 (fr) * | 1999-10-15 | 2001-04-26 | Pierre Tournois | Filtre a ondes acoustiques d'interface notamment pour les liaisons sans fil |
WO2005060094A1 (ja) * | 2003-12-16 | 2005-06-30 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
WO2006114930A1 (ja) * | 2005-04-25 | 2006-11-02 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
WO2008078481A1 (ja) * | 2006-12-25 | 2008-07-03 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101002857B1 (ko) * | 2003-09-16 | 2010-12-21 | 삼성전자주식회사 | 이동통신 시스템에서 이동단말의 속도 추정 방법 및 장치 |
US20060114930A1 (en) * | 2004-11-17 | 2006-06-01 | International Business Machines (Ibm) Corporation | In-band control of indicators to identify devices distributed on the same domain |
-
2009
- 2009-08-05 JP JP2010523760A patent/JPWO2010016246A1/ja active Pending
- 2009-08-05 US US13/056,813 patent/US20110133858A1/en not_active Abandoned
- 2009-08-05 WO PCT/JP2009/003734 patent/WO2010016246A1/ja active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1998052279A1 (fr) * | 1997-05-12 | 1998-11-19 | Hitachi, Ltd. | Dispositif a onde elastique |
WO2001029964A1 (fr) * | 1999-10-15 | 2001-04-26 | Pierre Tournois | Filtre a ondes acoustiques d'interface notamment pour les liaisons sans fil |
WO2005060094A1 (ja) * | 2003-12-16 | 2005-06-30 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
WO2006114930A1 (ja) * | 2005-04-25 | 2006-11-02 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
WO2008078481A1 (ja) * | 2006-12-25 | 2008-07-03 | Murata Manufacturing Co., Ltd. | 弾性境界波装置 |
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US20110133858A1 (en) | 2011-06-09 |
JPWO2010016246A1 (ja) | 2012-01-19 |
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