WO2009146606A1 - Solution de nettoyage pour éliminer des résidus de gravure plasma - Google Patents
Solution de nettoyage pour éliminer des résidus de gravure plasma Download PDFInfo
- Publication number
- WO2009146606A1 WO2009146606A1 PCT/CN2009/000623 CN2009000623W WO2009146606A1 WO 2009146606 A1 WO2009146606 A1 WO 2009146606A1 CN 2009000623 W CN2009000623 W CN 2009000623W WO 2009146606 A1 WO2009146606 A1 WO 2009146606A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- plasma etching
- ether
- cleaning solution
- etching residue
- residue cleaning
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 79
- 238000001020 plasma etching Methods 0.000 title claims abstract description 32
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims abstract description 11
- 239000002904 solvent Substances 0.000 claims abstract description 9
- AVXURJPOCDRRFD-UHFFFAOYSA-N hydroxylamine group Chemical group NO AVXURJPOCDRRFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- -1 hydroxyl tertiary amine Chemical class 0.000 claims description 43
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 claims description 32
- 239000007788 liquid Substances 0.000 claims description 24
- 150000001412 amines Chemical class 0.000 claims description 20
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 claims description 19
- 239000002738 chelating agent Substances 0.000 claims description 18
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 18
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 16
- NBZBKCUXIYYUSX-UHFFFAOYSA-N iminodiacetic acid Chemical compound OC(=O)CNCC(O)=O NBZBKCUXIYYUSX-UHFFFAOYSA-N 0.000 claims description 10
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 7
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 7
- YAMHXTCMCPHKLN-UHFFFAOYSA-N imidazolidin-2-one Chemical compound O=C1NCCN1 YAMHXTCMCPHKLN-UHFFFAOYSA-N 0.000 claims description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical group CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 6
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N anhydrous diethylene glycol Natural products OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims description 6
- 229910000040 hydrogen fluoride Inorganic materials 0.000 claims description 6
- UKODFQOELJFMII-UHFFFAOYSA-N pentamethyldiethylenetriamine Chemical compound CN(C)CCN(C)CCN(C)C UKODFQOELJFMII-UHFFFAOYSA-N 0.000 claims description 6
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical group CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 150000003462 sulfoxides Chemical class 0.000 claims description 5
- CYSGHNMQYZDMIA-UHFFFAOYSA-N 1,3-Dimethyl-2-imidazolidinon Chemical compound CN1CCN(C)C1=O CYSGHNMQYZDMIA-UHFFFAOYSA-N 0.000 claims description 4
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 claims description 4
- 150000001408 amides Chemical class 0.000 claims description 4
- 150000001413 amino acids Chemical class 0.000 claims description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 4
- RWZYAGGXGHYGMB-UHFFFAOYSA-N anthranilic acid Chemical compound NC1=CC=CC=C1C(O)=O RWZYAGGXGHYGMB-UHFFFAOYSA-N 0.000 claims description 4
- 229960001760 dimethyl sulfoxide Drugs 0.000 claims description 4
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical compound O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 150000003457 sulfones Chemical class 0.000 claims description 4
- CUVLMZNMSPJDON-UHFFFAOYSA-N 1-(1-butoxypropan-2-yloxy)propan-2-ol Chemical compound CCCCOCC(C)OCC(C)O CUVLMZNMSPJDON-UHFFFAOYSA-N 0.000 claims description 2
- QWOZZTWBWQMEPD-UHFFFAOYSA-N 1-(2-ethoxypropoxy)propan-2-ol Chemical compound CCOC(C)COCC(C)O QWOZZTWBWQMEPD-UHFFFAOYSA-N 0.000 claims description 2
- RDTCWQXQLWFJGY-UHFFFAOYSA-N 1-(methylamino)butan-2-ol Chemical compound CCC(O)CNC RDTCWQXQLWFJGY-UHFFFAOYSA-N 0.000 claims description 2
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 2
- RWNUSVWFHDHRCJ-UHFFFAOYSA-N 1-butoxypropan-2-ol Chemical compound CCCCOCC(C)O RWNUSVWFHDHRCJ-UHFFFAOYSA-N 0.000 claims description 2
- GNIJLZHYBVVHMA-UHFFFAOYSA-N 1-decoxypropan-2-ol Chemical compound CCCCCCCCCCOCC(C)O GNIJLZHYBVVHMA-UHFFFAOYSA-N 0.000 claims description 2
- MBDUIEKYVPVZJH-UHFFFAOYSA-N 1-ethylsulfonylethane Chemical compound CCS(=O)(=O)CC MBDUIEKYVPVZJH-UHFFFAOYSA-N 0.000 claims description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 claims description 2
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 2
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 claims description 2
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- WAEVWDZKMBQDEJ-UHFFFAOYSA-N 2-[2-(2-methoxypropoxy)propoxy]propan-1-ol Chemical group COC(C)COC(C)COC(C)CO WAEVWDZKMBQDEJ-UHFFFAOYSA-N 0.000 claims description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 claims description 2
- CAAMSDWKXXPUJR-UHFFFAOYSA-N 3,5-dihydro-4H-imidazol-4-one Chemical compound O=C1CNC=N1 CAAMSDWKXXPUJR-UHFFFAOYSA-N 0.000 claims description 2
- QCAHUFWKIQLBNB-UHFFFAOYSA-N 3-(3-methoxypropoxy)propan-1-ol Chemical group COCCCOCCCO QCAHUFWKIQLBNB-UHFFFAOYSA-N 0.000 claims description 2
- BLFRQYKZFKYQLO-UHFFFAOYSA-N 4-aminobutan-1-ol Chemical compound NCCCCO BLFRQYKZFKYQLO-UHFFFAOYSA-N 0.000 claims description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 2
- KCXVZYZYPLLWCC-UHFFFAOYSA-N EDTA Chemical compound OC(=O)CN(CC(O)=O)CCN(CC(O)=O)CC(O)=O KCXVZYZYPLLWCC-UHFFFAOYSA-N 0.000 claims description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims description 2
- UEEJHVSXFDXPFK-UHFFFAOYSA-N N-dimethylaminoethanol Chemical group CN(C)CCO UEEJHVSXFDXPFK-UHFFFAOYSA-N 0.000 claims description 2
- WUGQZFFCHPXWKQ-UHFFFAOYSA-N Propanolamine Chemical compound NCCCO WUGQZFFCHPXWKQ-UHFFFAOYSA-N 0.000 claims description 2
- MNZHBXZOPHQGMD-UHFFFAOYSA-N acetic acid;azane Chemical compound N.CC(O)=O.CC(O)=O.CC(O)=O MNZHBXZOPHQGMD-UHFFFAOYSA-N 0.000 claims description 2
- 239000000908 ammonium hydroxide Substances 0.000 claims description 2
- LDDQLRUQCUTJBB-UHFFFAOYSA-O azanium;hydrofluoride Chemical compound [NH4+].F LDDQLRUQCUTJBB-UHFFFAOYSA-O 0.000 claims description 2
- CCAFPWNGIUBUSD-UHFFFAOYSA-N diethyl sulfoxide Chemical compound CCS(=O)CC CCAFPWNGIUBUSD-UHFFFAOYSA-N 0.000 claims description 2
- 229940028356 diethylene glycol monobutyl ether Drugs 0.000 claims description 2
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 claims description 2
- 229940075557 diethylene glycol monoethyl ether Drugs 0.000 claims description 2
- 229960002449 glycine Drugs 0.000 claims description 2
- CRVGTESFCCXCTH-UHFFFAOYSA-N methyl diethanolamine Chemical compound OCCN(C)CCO CRVGTESFCCXCTH-UHFFFAOYSA-N 0.000 claims description 2
- PZYDAVFRVJXFHS-UHFFFAOYSA-N n-cyclohexyl-2-pyrrolidone Chemical compound O=C1CCCN1C1CCCCC1 PZYDAVFRVJXFHS-UHFFFAOYSA-N 0.000 claims description 2
- MGFYIUFZLHCRTH-UHFFFAOYSA-N nitrilotriacetic acid Chemical compound OC(=O)CN(CC(O)=O)CC(O)=O MGFYIUFZLHCRTH-UHFFFAOYSA-N 0.000 claims description 2
- JCGNDDUYTRNOFT-UHFFFAOYSA-N oxolane-2,4-dione Chemical compound O=C1COC(=O)C1 JCGNDDUYTRNOFT-UHFFFAOYSA-N 0.000 claims description 2
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 2
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 2
- HHVIBTZHLRERCL-UHFFFAOYSA-N sulfonyldimethane Chemical compound CS(C)(=O)=O HHVIBTZHLRERCL-UHFFFAOYSA-N 0.000 claims description 2
- JOLQKTGDSGKSKJ-UHFFFAOYSA-N 1-ethoxypropan-2-ol Chemical compound CCOCC(C)O JOLQKTGDSGKSKJ-UHFFFAOYSA-N 0.000 claims 1
- YGZNPWLHYNXTGF-UHFFFAOYSA-N 2-[2-(2-decoxypropoxy)propoxy]propan-1-ol Chemical compound CCCCCCCCCCOC(C)COC(C)COC(C)CO YGZNPWLHYNXTGF-UHFFFAOYSA-N 0.000 claims 1
- ZIOLCZCJJJNOEJ-UHFFFAOYSA-N 2-pyrrol-1-ylethanol Chemical compound OCCN1C=CC=C1 ZIOLCZCJJJNOEJ-UHFFFAOYSA-N 0.000 claims 1
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- RJGDLRCDCYRQOQ-UHFFFAOYSA-N anthrone Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3CC2=C1 RJGDLRCDCYRQOQ-UHFFFAOYSA-N 0.000 claims 1
- MOVBJUGHBJJKOW-UHFFFAOYSA-N methyl 2-amino-5-methoxybenzoate Chemical compound COC(=O)C1=CC(OC)=CC=C1N MOVBJUGHBJJKOW-UHFFFAOYSA-N 0.000 claims 1
- QATBRNFTOCXULG-UHFFFAOYSA-N n'-[2-(methylamino)ethyl]ethane-1,2-diamine Chemical compound CNCCNCCN QATBRNFTOCXULG-UHFFFAOYSA-N 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 abstract description 29
- 239000002184 metal Substances 0.000 abstract description 29
- 230000007797 corrosion Effects 0.000 abstract description 18
- 238000005260 corrosion Methods 0.000 abstract description 18
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- 239000004065 semiconductor Substances 0.000 abstract description 9
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 abstract description 6
- 239000013522 chelant Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 21
- 239000000243 solution Substances 0.000 description 16
- 229920002120 photoresistant polymer Polymers 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 10
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052731 fluorine Inorganic materials 0.000 description 7
- 239000011737 fluorine Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 7
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- 229910052710 silicon Inorganic materials 0.000 description 7
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- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 description 6
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 239000008367 deionised water Substances 0.000 description 6
- 229910021641 deionized water Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000012360 testing method Methods 0.000 description 6
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- 239000010949 copper Substances 0.000 description 5
- 229910052755 nonmetal Inorganic materials 0.000 description 5
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- 230000000694 effects Effects 0.000 description 4
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- QRUDEWIWKLJBPS-UHFFFAOYSA-N benzotriazole Chemical compound C1=CC=C2N[N][N]C2=C1 QRUDEWIWKLJBPS-UHFFFAOYSA-N 0.000 description 3
- 239000012964 benzotriazole Substances 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000003682 fluorination reaction Methods 0.000 description 3
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- YHJHZHZQCZUIKK-UHFFFAOYSA-N C(CO)O.C(C)O.C(C)O.C(C)O Chemical compound C(CO)O.C(C)O.C(C)O.C(C)O YHJHZHZQCZUIKK-UHFFFAOYSA-N 0.000 description 2
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- CPXAVMWHYAGLNU-UHFFFAOYSA-N 2-(2-decoxypropoxy)propan-1-ol Chemical compound CCCCCCCCCCOC(C)COC(C)CO CPXAVMWHYAGLNU-UHFFFAOYSA-N 0.000 description 1
- IZXIZTKNFFYFOF-UHFFFAOYSA-N 2-Oxazolidone Chemical compound O=C1NCCO1 IZXIZTKNFFYFOF-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/10—Salts
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3245—Aminoacids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
- H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
- H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Definitions
- the invention relates to a cleaning liquid in a semiconductor manufacturing process, and in particular to a plasma etching residue cleaning liquid.
- the application, exposure and imaging of the photoresist layer is a necessary process step for the pattern fabrication of the components.
- the residue of the photoresist layer material needs to be completely removed before the next process step (i.e., after coating, imaging, ion implantation, and etching of the photoresist layer). Ion bombardment in the doping step hardens the photoresist layer polymer, thus making the photoresist layer less soluble and more difficult to remove.
- this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching).
- the first step utilizes dry ashing to remove most of the photoresist layer (PR); the second step utilizes the corrosion inhibitor composition wet etch/clean process to remove and clean the remaining photoresist layer, typically in the form of a cleaning solution. / rinse / deionized water rinse. Only the residual polymer photoresist layer and inorganic matter can be removed in this process, and the damage to the metal layer such as the aluminum layer cannot be attacked.
- Typical cleaning solutions in the prior art are as follows: amine cleaning solution, semi-aqueous amine based (non-hydroxylamine) cleaning solution and fluorine cleaning solution.
- the first two types of cleaning fluids need to be cleaned at high temperatures, generally between 60 C and 80 ° C, and there is a problem of high corrosion rate to metals; while existing fluorine-based cleaning solutions can be used at lower temperatures (room temperature).
- Cleaning is carried out at 50 ° C), but there are still various disadvantages, such as the inability to simultaneously control the corrosion of metal and non-metal substrates, and the change in the size of the channel characteristics after cleaning, thereby changing the semiconductor structure; In terms of its large etching rate, the cleaning operation window is relatively small.
- the cleaning liquid composition disclosed in the patent US 6,828,289 comprises: Flushing, organic polar solvent, fluoride and water, and the pH is between 3 and 7, wherein the acidic buffer consists of an organic carboxylic acid or a polybasic acid and a corresponding ammonium salt, and the composition ratio is 10:1 to 1 : 10 between.
- a fluorine-containing cleaning liquid is disclosed in the patent US Pat. No. 5,698, 503, but the use of ethylene glycol in a large amount, the viscosity and surface tension of the cleaning liquid are large, thereby affecting the cleaning effect.
- a cleaning composition for a fluorine-containing substance comprising a fluorine-containing substance, an inorganic or organic acid, a quaternary ammonium salt and an organic polar solvent, having a pH of from 7 to 11, is disclosed in the patent US Pat. No. 5,972,862, which is The problem.
- the technical problem to be solved by the present invention is that in order to overcome the cleaning process in the semiconductor manufacturing process, the conventional amine cleaning liquid and the semi-aqueous amine based cleaning liquid need to be cleaned at a high temperature, and the corrosion rate to the metal is large, and the existing one contains After cleaning, the fluorine cleaning solution is easy to cause changes in the channel feature size and the cleaning operation window is small, and provides a safe, healthy and effective plasma etching residue cleaning liquid.
- the present invention discloses a plasma etch residue cleaning solution comprising a solvent, water, a fluoride and a chelating agent, which further contains a hydroxyl tertiary amine and a hydroxy primary amine.
- the weight percentage of the hydroxyl tertiary amine is preferably from 0.1% to 20% ; the weight percentage of the primary hydroxylamine is preferably from 0.01% to 5%, more preferably from 0.1% to 1%;
- the weight percentage of the solvent is preferably from 30% to 75%; the weight percentage of the water is preferably from 15% to 65%; and the weight percentage of the fluoride is preferably from 0.1% to 20%. %; the weight of the chelating agent The percentage by weight is preferably from 0.1% to 20%, more preferably from 1% to 10%.
- the hydroxyl tertiary amine is preferably one or more of N, N-dimethylethanolamine, N, N-methylethylethanolamine, N-methyldiethanolamine and triethanolamine.
- Triethanolamine is preferred;
- the hydroxyl primary amine is preferably one or more of monoethanolamine, propanolamine, butanolamine and diglycolamine, preferably monoethanolamine.
- the solvent may be a solvent commonly used in the plasma etching residue cleaning liquid in the field, preferably one of sulfoxide, sulfone, imidazolidinone, pyrrolidone, imidazolidinone, amide and ether. kind or more.
- the sulfoxide is preferably one or more of dimethyl sulfoxide, diethyl sulfoxide and methyl sulfoxide; and the sulfone is preferably methyl sulfone, ethyl sulfone and sulfolane.
- the imidazolidinone is preferably one of 2-imidazolidinone, 1,3-dimethyl-2-imidazolidinone, and 1,3-diethyl-2-imidazolidinone Or one or more;
- the pyrrolidone is preferably one or more of N-methylpyrrolidone, N-ethylpyrrolidone, N-cyclohexylpyrrolidone and N-hydroxyethylpyrrolidone;
- the imidazolinone is preferably 1,3-dimethyl-2-imidazolidinone;
- the amide is preferably dimethylformamide and/or dimethylacetamide;
- the ether is preferably ethylene glycol monoalkane One or more of a group ether, a diethylene glycol monoalkyl ether, a propylene glycol monoalkyl ether, a dipropylene glycol monoalkyl ether, and a tripropylene glycol monoalkyl ether.
- the ethylene glycol single-chamber ether is preferably one or more of ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and ethylene glycol monobutyl ether;
- the ether is preferably one of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether;
- the propylene glycol monodecyl ether is preferably propylene glycol monomethyl ether or propylene glycol single One or more of diethyl ether and propylene glycol monobutyl ether;
- the dipropylene glycol monodecyl ether is preferably one or more of dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether;
- the tripropylene glycol monoalkyl ether is preferably tripropylene glycol monomethyl ether.
- the fluoride may be a fluoride commonly used in the fluorine-containing cleaning liquid of the art, and is preferably a salt of hydrogen fluoride (HF), ammonium hydrogen fluoride (NH 4 HF 2 ), hydrogen fluoride and a base.
- the base is preferably one or more of ammonia water, quaternary ammonium hydroxide and alcohol amine; the salt formed by the hydrogen fluoride and the base is preferably ammonium fluoride (NH 4 F) or tetramethyl.
- the chelating agent is a commonly used chelating agent in the plasma etching residue cleaning liquid in the field, and generally refers to a compound having a function of chelating a metal ion such as oxalic acid and citric acid.
- the chelating agent of the present invention is selected from polyfunctional organic compounds containing a nitrogen atom, such as polyamino organic amines and/or amino acids.
- the polyaminoorganic amine is preferably one or more of diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, more preferably pentamethyldiethylenetriamine; Preference is given to one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, aminotriacetic acid and ethylenediaminetetraacetic acid, more preferably iminodiacetic acid.
- the chelating agent is most preferably a complex chelating agent of a polyamino organic amine and an amino acid, such as a complex chelating agent of iminodiacetic acid and pentamethyldiethylenetriamine, ammonia triacetic acid and pentamethyldiethylene triamine.
- a compounding chelating agent, or a complex chelating agent of iminodiacetic acid and diethylenetriamine is preferably one or more of diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, more
- the cleaning solution of the present invention may also contain other conventional additives in the art, such as metal aluminum copper corrosion inhibitors (e.g., benzotriazole).
- metal aluminum copper corrosion inhibitors e.g., benzotriazole
- the reagents and starting materials used in the present invention are commercially available.
- the plasma etching residue cleaning liquid of the present invention can be obtained by simply and uniformly mixing the above components.
- the plasma etching residue cleaning liquid of the invention is suitable for a wide range of use temperatures, generally in the room Temperatures up to 55 ° C, and suitable for a variety of cleaning methods, such as batch immersion (w e t Batoh), batch rotary spray (Batch-spray) and single-piece rotary cleaning.
- the cleaning solution of the present invention can effectively clean plasma etching residues generated in metal and semiconductor manufacturing processes without eroding SiO 2 , ion-enhanced tetraethoxysilane silicon dioxide (PETEOS), silicon, low
- PETEOS ion-enhanced tetraethoxysilane silicon dioxide
- the dielectric material and some metal materials can make the metal wafer smooth when the metal wafer is cleaned.
- the cleaning liquid of the present invention can function in a relatively large temperature range, generally in the range of room temperature to 55 ° C, and at the same time, the cleaning liquid of the present invention maintains a small etching rate of metal and dielectric substances. .
- the cleaning liquid of the present invention effectively reduces the corrosion of copper while maintaining a low metal aluminum and non-metal TEOS corrosion rate.
- the cleaning liquid of the present invention has a strong cleaning ability and can simultaneously clean metal wire (Via)/metal pad (Pad) wafers.
- the cleaning liquid of the present invention has a large operation window and can be applied to a batch-spray/batch-spray/single wafer tool processor.
- Figure 1 shows an SEM image of an unwashed metal wafer cleaning.
- Figure 2 is a SEM image of a metal wafer after cleaning in a comparative example.
- Table 1 shows Examples 1 to 29, and each of the components in each of the examples was simply mixed to obtain a plasma etching residue cleaning liquid.
- Figure 1 It can be seen from Figure 1 that there are more photoresist residues on the metal lines of the uncleaned metal wafer.
- Figure 2 shows that although the comparative example can also clean the photoresist residue on the metal wafer, the metal fine line surface ratio Thicker, there are some pits.
- Figure 3 shows that the cleaning liquid of the present invention can not only clean the photoresist residue on the metal wafer, but also the surface of the fine metal wire is relatively smooth. Thereby, it is advantageous to improve the performance of the semiconductor device.
- the cleaning solution of the present invention effectively reduces the corrosion of copper while maintaining a low metal aluminum and non-metal TEOS corrosion rate; and it can not only clean the photoresist residue on the metal wafer, but also The thin surface of the metal thin wire is smooth, which is beneficial to improve the performance of the semiconductor device.
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- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
La présente invention concerne une solution de nettoyage pour éliminer des résidus de gravure plasma contenant du solvant, de l’eau, du fluorure, un agent chélatant, une hydroxylamine tertiaire et une hydroxylamine primaire. La solution de nettoyage présente une forte capacité de nettoyage et peut éliminer efficacement les résidus de gravure plasma sur du métal ou un semi-conducteur. La solution de nettoyage peut être utilisée dans une large plage de températures et présente un plus large créneau de fonctionnement. La solution de nettoyage présente un faible taux de corrosion sur de l’aluminium métallique et le tétraéthoxysilane non métallique, et réduit efficacement la corrosion sur du cuivre.
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CN200980121263.5A CN102047184B (zh) | 2008-06-06 | 2009-06-03 | 一种等离子刻蚀残留物清洗液 |
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CN200810038695.7 | 2008-06-06 | ||
CNA2008100386957A CN101597548A (zh) | 2008-06-06 | 2008-06-06 | 一种等离子刻蚀残留物清洗液 |
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WO2009146606A1 true WO2009146606A1 (fr) | 2009-12-10 |
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PCT/CN2009/000623 WO2009146606A1 (fr) | 2008-06-06 | 2009-06-03 | Solution de nettoyage pour éliminer des résidus de gravure plasma |
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WO (1) | WO2009146606A1 (fr) |
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EP2930565A1 (fr) * | 2014-04-09 | 2015-10-14 | Tokyo Ohka Kogyo Co., Ltd. | Solution de décapage pour photolithographie et procédé de formation de motif |
EP2593964A4 (fr) * | 2010-07-16 | 2017-12-06 | Entegris Inc. | Nettoyant aqueux pour l'élimination de résidus post-gravure |
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5972862A (en) * | 1996-08-09 | 1999-10-26 | Mitsubishi Gas Chemical | Cleaning liquid for semiconductor devices |
EP1775337A1 (fr) * | 2005-10-14 | 2007-04-18 | Air Products and Chemicals, Inc. | Composition aqueuse de nettoyage pour éliminer des résidus et son procédé d'utilisation |
CN1966636A (zh) * | 2005-11-15 | 2007-05-23 | 安集微电子(上海)有限公司 | 清洗液组合物 |
CN101187787A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂及其清洗方法 |
CN101187788A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性较厚光刻胶清洗液 |
-
2008
- 2008-06-06 CN CNA2008100386957A patent/CN101597548A/zh active Pending
-
2009
- 2009-06-03 CN CN200980121263.5A patent/CN102047184B/zh active Active
- 2009-06-03 WO PCT/CN2009/000623 patent/WO2009146606A1/fr active Application Filing
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5972862A (en) * | 1996-08-09 | 1999-10-26 | Mitsubishi Gas Chemical | Cleaning liquid for semiconductor devices |
EP1775337A1 (fr) * | 2005-10-14 | 2007-04-18 | Air Products and Chemicals, Inc. | Composition aqueuse de nettoyage pour éliminer des résidus et son procédé d'utilisation |
CN1966636A (zh) * | 2005-11-15 | 2007-05-23 | 安集微电子(上海)有限公司 | 清洗液组合物 |
CN101187787A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性光刻胶清洗剂及其清洗方法 |
CN101187788A (zh) * | 2006-11-17 | 2008-05-28 | 安集微电子(上海)有限公司 | 低蚀刻性较厚光刻胶清洗液 |
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US10415005B2 (en) | 2013-12-06 | 2019-09-17 | Fujifilm Electronic Materials U.S.A., Inc. | Cleaning formulation for removing residues on surfaces |
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JP2017504190A (ja) * | 2013-12-06 | 2017-02-02 | フジフイルム エレクトロニック マテリアルズ ユー.エス.エー., インコーポレイテッド | 表面上の残渣を除去するための洗浄用製剤 |
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CN116218612B (zh) * | 2021-12-06 | 2024-07-09 | 上海新阳半导体材料股份有限公司 | 一种聚酰亚胺清洗液在清洗半导体器件中的应用 |
CN116218610B (zh) * | 2021-12-06 | 2024-07-09 | 上海新阳半导体材料股份有限公司 | 一种聚酰亚胺清洗液的制备方法 |
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CN102047184B (zh) | 2013-10-23 |
CN101597548A (zh) | 2009-12-09 |
CN102047184A (zh) | 2011-05-04 |
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