WO2009052707A1 - Composition de nettoyage de résidus de gravure au plasma - Google Patents

Composition de nettoyage de résidus de gravure au plasma Download PDF

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Publication number
WO2009052707A1
WO2009052707A1 PCT/CN2008/001758 CN2008001758W WO2009052707A1 WO 2009052707 A1 WO2009052707 A1 WO 2009052707A1 CN 2008001758 W CN2008001758 W CN 2008001758W WO 2009052707 A1 WO2009052707 A1 WO 2009052707A1
Authority
WO
WIPO (PCT)
Prior art keywords
ether
plasma etching
residue cleaning
cleaning solution
etching residue
Prior art date
Application number
PCT/CN2008/001758
Other languages
English (en)
Chinese (zh)
Inventor
Bing Liu
Libbert Hongxiu Peng
Joey Hao Yu
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anji Microelectronics (Shanghai) Co., Ltd. filed Critical Anji Microelectronics (Shanghai) Co., Ltd.
Priority to CN2008801130471A priority Critical patent/CN101827927B/zh
Publication of WO2009052707A1 publication Critical patent/WO2009052707A1/fr

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a cleaning fluid in a semiconductor manufacturing process, and in particular to a plasma etching residue cleaning fluid.
  • the application, exposure and imaging of the photoresist layer is a necessary process step for the pattern fabrication of the components.
  • the residue of the photoresist layer material needs to be completely removed before the next process step (i.e., after coating, imaging, ion implantation, and etching of the photoresist layer).
  • Ion bombardment in the doping step hardens the photoresist layer polymer, thus making the photoresist layer less soluble and more difficult to remove.
  • this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching).
  • the first step uses dry ashing to remove most of the photoresist layer (PR).
  • the second step utilizes the corrosion inhibitor composition wet etch/clean process to remove the remaining photoresist layer.
  • the specific steps are typically rinse cleaning/rinsing/deionized water rinsing. In this process, only the residual polymer photoresist layer and the inorganic material can be removed, and the damaged metal layer (such as the aluminum layer) cannot be attacked.
  • Typical cleaning solutions in the prior art are as follows: amine cleaning solution, semi-aqueous amine based (non-hydroxyl amine) cleaning solution and fluoride cleaning solution.
  • the first two types of cleaning liquids need to be cleaned at high temperatures, generally between 60 ° C and 80 ° C, and there is a problem that the corrosion rate of the metal is large.
  • existing fluorinated cleaning solutions can be cleaned at lower temperatures (room temperature to 50 Torr), there are still various disadvantages. For example, the corrosion of metal and non-metal substrates cannot be controlled at the same time, and the size of the channel features can be changed after cleaning, thereby changing the semiconductor structure; the etching rate is large, so that the cleaning operation window is relatively small.
  • the cleaning solution composition disclosed in US 6, 828, 289 comprises: an acidic buffer, an organic polar solvent, a fluorine-containing substance and water, and having a pH between 3 and 7, wherein the acidic buffer is composed of an organic carboxylic acid or a plurality of The acid is composed of the corresponding ammonium salt, and the composition ratio is between 10:1 and 1:10.
  • US 5,698, 503 discloses a fluorine-containing cleaning liquid, but a large amount of ethylene glycol is used, and the viscosity and surface tension of the cleaning liquid are large, thereby affecting the cleaning effect.
  • US 5,972,862 discloses a cleaning composition for a fluorine-containing substance comprising a fluorine-containing substance, an inorganic or organic acid, a quaternary ammonium salt and an organic polar solvent, having a pH of from 7 to 11, since the cleaning effect is not very stable, There are various problems.
  • the technical problem to be solved by the present invention is to overcome the existing corrosion rate of the plasma etching residue cleaning liquid, and to control the corrosion of metal and non-metal at the same time, the cleaning window is small, the cleaning ability is insufficient, and the cleaning effect is unstable.
  • the defect provides a plasma etching residue cleaning liquid which has a strong cleaning ability and a small corrosion rate, can simultaneously control metal and non-metal corrosion, has a large cleaning window, and has a stable cleaning effect.
  • the plasma etch residue cleaning solution of the present invention contains dimethyl sulfoxide, a polyol monoalkyl ether, water, a fluoride, a polyamino organic amine, an amino acid, and a tertiary amine.
  • the content of the dimethyl sulfoxide (DMSO) is preferably from 1 to 75% by mass.
  • the polyol monodecyl ether is preferably ethylene glycol monoalkyl ether, diethylene glycol monodecyl ether, propylene glycol monodecyl ether, dipropylene glycol monoalkyl ether and tripropylene glycol monoalkyl group.
  • the ethylene glycol monodecyl ether is preferably ethylene glycol monomethyl ether or ethylene glycol monoethyl ether One or more of ether and ethylene glycol monobutyl ether;
  • the diethylene glycol monodecyl ether is preferably diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol One or more of monobutyl ether;
  • the propylene glycol monoalkyl ether is preferably one or more of propylene glycol monomethyl ether, propylene glycol monoethyl ether and propylene glycol monobutyl ether;
  • the mercapto ether is preferably one or more of dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether; and the tripropylene glycol monoalkyl ether is preferably tripropylene glycol monomethyl ether.
  • the fluoride is preferably selected from the group consisting of hydrogen fluoride, or a salt formed by hydrogen fluoride and a base, preferably hydrogen fluoride (HF), ammonium fluoride (N3 ⁇ 4F), ammonium hydrogen fluoride (NH4HF 2 ), tetramethylammonium fluoride (N). (CH 3 ) 4 F) and one or more of trishydroxyethylammonium fluoride (N(CH 2 OH) 3 HF).
  • the base is preferably selected from the group consisting of ammonia water, quaternary ammonium hydroxides and alcohol amines.
  • the content of the fluoride is preferably 0.020% by mass.
  • the content of the water is preferably 15 to 65% by mass.
  • the polyamino organic amine is preferably one or more of diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, more preferably pentamethyldiethylenetriamine.
  • the content of the polyaminoorganic amine is preferably 0.1 to 20% by mass.
  • the amino acid is preferably one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, aminotriacetic acid and ethylenediaminetetraacetic acid, more preferably iminodiamide.
  • Acetic acid The content of the amino acid is preferably 0.1 to 10% by mass.
  • the tertiary amine is preferably one of triethylamine, tripropylamine, N,N-dimethylethanolamine, N,N-methylethylethanolamine, N-methyldiethanolamine and triethanolamine. Or more, more preferably triethanolamine.
  • the content of the tertiary amine is preferably 0.1 to 20% by mass.
  • the cleaning solution of the present invention may further comprise other conventional additives in the art, such as metal preservatives (such as copper).
  • metal preservatives such as copper
  • Preservative benzotriazole
  • aluminum polyacrylic acid
  • the cleaning liquid of the present invention can be obtained by simply mixing and mixing the above components.
  • the cleaning solution of the present invention can be used over a wide temperature range, generally ranging from room temperature to 55 Torr, and can be applied to various cleaning methods such as batch immersion, batch rotary, and single-piece rotary.
  • the reagents and materials used in the present invention are commercially available.
  • the positive progress of the invention is as follows:
  • the cleaning liquid of the invention has strong cleaning ability, and can clean the metal wire (Via) and the metal pad (Pad) wafer to effectively remove the plasma etching residue, and Metal materials (such as Si0 2 , ion-enhanced tetraethoxysilane silicon dioxide (PETE0S), silicon and low dielectric materials, etc.) and some metal materials (such as Ti, A1 and Cu) have a small corrosion rate. Simultaneously control the corrosion of metals and non-metals.
  • the cleaning liquid of the present invention can be applied to a batch batch, a batch-spray and a single wafer tool, and has a large operation window. Summary of the invention
  • Table 1 shows an example of the plasma etching residue cleaning liquid of the present invention. 1.
  • the cleaning liquids of the respective examples were prepared by uniformly mixing the components according to the formulation in the table.
  • Plasma etching residue cleaning solution of the present invention 1 ⁇ 16 polyol monoalkyl polyamino organic
  • the wire, channel and metal pad were cleaned using the cleaning solution of Example 14 and tested for corrosion rates for metallic aluminum and non-metal (PETE0S).
  • Non-metallic corrosion rate test method for cleaning solution
  • Table 2 shows the cleaning effect and corrosion rate of the cleaning solution of Example 14.
  • the cleaning liquid of the present invention does not substantially erode the metal (such as metal aluminum) and non-metal (such as PETEOS) used in semiconductor fabrication, and the etching rate is close to or lower than that normally required by the semiconductor industry. 2 angstroms per minute. After cleaning the plasma etch residue with the cleaning solution of Example 14, it was found that the plasma etching residue was removed and substantially no corrosion of metals and nonmetals.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Emergency Medicine (AREA)
  • Health & Medical Sciences (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)

Abstract

L'invention concerne une composition de nettoyage de résidus de gravure au plasma. Cette composition comprend : un diméthylsulfoxyde; des éthers polyol monoalkyle; de l'eau; des fluorures; une organoamine polyamino; un amino-acide; une amine tertiaire. Elle possède une meilleure capacité de nettoyage, une plus grande fenêtre de fonctionnement et une meilleure perspective dans le domaine de l'industrie micro-électronique telle que dans le nettoyage de tranche à semi-conducteurs. Elle peut supprimer efficacement des résidus du métal, de trous d'interconnexion et de tranches à pastilles dans un processus de gravure au plasma. Elle présente une vitesse de corrosion inférieure pour des matériaux non métalliques (SiO2, PETEOS, Si et un materiau à faible-moyenne constante diélectrique) et pour des matériaux partiellement métalliques (Ti, Al et Cu). Sa mesure de nettoyage comprend une mesure de trempage de lot, une mesure de pulvérisation rotative de lot et une mesure rotative de puce unique.
PCT/CN2008/001758 2007-10-19 2008-10-20 Composition de nettoyage de résidus de gravure au plasma WO2009052707A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN2008801130471A CN101827927B (zh) 2007-10-19 2008-10-20 一种等离子刻蚀残留物清洗液

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNA2007100472642A CN101412950A (zh) 2007-10-19 2007-10-19 一种等离子刻蚀残留物清洗液
CN200710047264.2 2007-10-19

Publications (1)

Publication Number Publication Date
WO2009052707A1 true WO2009052707A1 (fr) 2009-04-30

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Application Number Title Priority Date Filing Date
PCT/CN2008/001758 WO2009052707A1 (fr) 2007-10-19 2008-10-20 Composition de nettoyage de résidus de gravure au plasma

Country Status (2)

Country Link
CN (2) CN101412950A (fr)
WO (1) WO2009052707A1 (fr)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102827707A (zh) * 2011-06-16 2012-12-19 安集微电子科技(上海)有限公司 一种等离子刻蚀残留物清洗液
CN102827708A (zh) * 2011-06-16 2012-12-19 安集微电子（上海）有限公司 一种等离子刻蚀残留物清洗液
CN102808190B (zh) * 2012-08-31 2014-06-25 昆山艾森半导体材料有限公司 环保型弱碱性低温去毛刺软化液及其制备方法和使用方法
KR102635269B1 (ko) * 2015-12-25 2024-02-13 아라까와 가가꾸 고교 가부시끼가이샤 전자재료용의 세정제 조성물, 세정제 원액, 및 전자재료의 세정방법
CN107589637A (zh) * 2017-08-29 2018-01-16 昆山艾森半导体材料有限公司 一种含氟铝线清洗液
CN109989069B (zh) * 2019-04-11 2021-06-01 上海新阳半导体材料股份有限公司 一种除油剂、其制备方法和应用
CN110003996B (zh) * 2019-05-21 2021-03-23 广东剑鑫科技股份有限公司 一种浸泡液及其制备方法和使用方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215736A (ja) * 2000-02-04 2001-08-10 Jsr Corp フォトレジスト用剥離液組成物、剥離方法及び回路基板
CN1488740A (zh) * 2002-09-09 2004-04-14 ������ѧ��ʽ���� 清洁组合物
CN1900363A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 清洗液及其用途
CN1966636A (zh) * 2005-11-15 2007-05-23 安集微电子（上海）有限公司 清洗液组合物

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215736A (ja) * 2000-02-04 2001-08-10 Jsr Corp フォトレジスト用剥離液組成物、剥離方法及び回路基板
CN1488740A (zh) * 2002-09-09 2004-04-14 ������ѧ��ʽ���� 清洁组合物
CN1900363A (zh) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 清洗液及其用途
CN1966636A (zh) * 2005-11-15 2007-05-23 安集微电子（上海）有限公司 清洗液组合物

Also Published As

Publication number Publication date
CN101412950A (zh) 2009-04-22
CN101827927A (zh) 2010-09-08
CN101827927B (zh) 2012-06-13

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