WO2009052707A1 - A plasma etching residues cleaning composition - Google Patents

A plasma etching residues cleaning composition Download PDF

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Publication number
WO2009052707A1
WO2009052707A1 PCT/CN2008/001758 CN2008001758W WO2009052707A1 WO 2009052707 A1 WO2009052707 A1 WO 2009052707A1 CN 2008001758 W CN2008001758 W CN 2008001758W WO 2009052707 A1 WO2009052707 A1 WO 2009052707A1
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Prior art keywords
ether
plasma etching
residue cleaning
cleaning solution
etching residue
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PCT/CN2008/001758
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French (fr)
Chinese (zh)
Inventor
Bing Liu
Libbert Hongxiu Peng
Joey Hao Yu
Original Assignee
Anji Microelectronics (Shanghai) Co., Ltd.
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Application filed by Anji Microelectronics (Shanghai) Co., Ltd. filed Critical Anji Microelectronics (Shanghai) Co., Ltd.
Priority to CN2008801130471A priority Critical patent/CN101827927B/en
Publication of WO2009052707A1 publication Critical patent/WO2009052707A1/en

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    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/28—Organic compounds containing halogen
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/34—Organic compounds containing sulfur
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/50—Solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/0206—Cleaning during device manufacture during, before or after processing of insulating layers
    • H01L21/02063—Cleaning during device manufacture during, before or after processing of insulating layers the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H01L21/02068—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers
    • H01L21/02071—Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers the processing being a delineation, e.g. RIE, of conductive layers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Definitions

  • the present invention relates to a cleaning fluid in a semiconductor manufacturing process, and in particular to a plasma etching residue cleaning fluid.
  • the application, exposure and imaging of the photoresist layer is a necessary process step for the pattern fabrication of the components.
  • the residue of the photoresist layer material needs to be completely removed before the next process step (i.e., after coating, imaging, ion implantation, and etching of the photoresist layer).
  • Ion bombardment in the doping step hardens the photoresist layer polymer, thus making the photoresist layer less soluble and more difficult to remove.
  • this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching).
  • the first step uses dry ashing to remove most of the photoresist layer (PR).
  • the second step utilizes the corrosion inhibitor composition wet etch/clean process to remove the remaining photoresist layer.
  • the specific steps are typically rinse cleaning/rinsing/deionized water rinsing. In this process, only the residual polymer photoresist layer and the inorganic material can be removed, and the damaged metal layer (such as the aluminum layer) cannot be attacked.
  • Typical cleaning solutions in the prior art are as follows: amine cleaning solution, semi-aqueous amine based (non-hydroxyl amine) cleaning solution and fluoride cleaning solution.
  • the first two types of cleaning liquids need to be cleaned at high temperatures, generally between 60 ° C and 80 ° C, and there is a problem that the corrosion rate of the metal is large.
  • existing fluorinated cleaning solutions can be cleaned at lower temperatures (room temperature to 50 Torr), there are still various disadvantages. For example, the corrosion of metal and non-metal substrates cannot be controlled at the same time, and the size of the channel features can be changed after cleaning, thereby changing the semiconductor structure; the etching rate is large, so that the cleaning operation window is relatively small.
  • the cleaning solution composition disclosed in US 6, 828, 289 comprises: an acidic buffer, an organic polar solvent, a fluorine-containing substance and water, and having a pH between 3 and 7, wherein the acidic buffer is composed of an organic carboxylic acid or a plurality of The acid is composed of the corresponding ammonium salt, and the composition ratio is between 10:1 and 1:10.
  • US 5,698, 503 discloses a fluorine-containing cleaning liquid, but a large amount of ethylene glycol is used, and the viscosity and surface tension of the cleaning liquid are large, thereby affecting the cleaning effect.
  • US 5,972,862 discloses a cleaning composition for a fluorine-containing substance comprising a fluorine-containing substance, an inorganic or organic acid, a quaternary ammonium salt and an organic polar solvent, having a pH of from 7 to 11, since the cleaning effect is not very stable, There are various problems.
  • the technical problem to be solved by the present invention is to overcome the existing corrosion rate of the plasma etching residue cleaning liquid, and to control the corrosion of metal and non-metal at the same time, the cleaning window is small, the cleaning ability is insufficient, and the cleaning effect is unstable.
  • the defect provides a plasma etching residue cleaning liquid which has a strong cleaning ability and a small corrosion rate, can simultaneously control metal and non-metal corrosion, has a large cleaning window, and has a stable cleaning effect.
  • the plasma etch residue cleaning solution of the present invention contains dimethyl sulfoxide, a polyol monoalkyl ether, water, a fluoride, a polyamino organic amine, an amino acid, and a tertiary amine.
  • the content of the dimethyl sulfoxide (DMSO) is preferably from 1 to 75% by mass.
  • the polyol monodecyl ether is preferably ethylene glycol monoalkyl ether, diethylene glycol monodecyl ether, propylene glycol monodecyl ether, dipropylene glycol monoalkyl ether and tripropylene glycol monoalkyl group.
  • the ethylene glycol monodecyl ether is preferably ethylene glycol monomethyl ether or ethylene glycol monoethyl ether One or more of ether and ethylene glycol monobutyl ether;
  • the diethylene glycol monodecyl ether is preferably diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol One or more of monobutyl ether;
  • the propylene glycol monoalkyl ether is preferably one or more of propylene glycol monomethyl ether, propylene glycol monoethyl ether and propylene glycol monobutyl ether;
  • the mercapto ether is preferably one or more of dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether; and the tripropylene glycol monoalkyl ether is preferably tripropylene glycol monomethyl ether.
  • the fluoride is preferably selected from the group consisting of hydrogen fluoride, or a salt formed by hydrogen fluoride and a base, preferably hydrogen fluoride (HF), ammonium fluoride (N3 ⁇ 4F), ammonium hydrogen fluoride (NH4HF 2 ), tetramethylammonium fluoride (N). (CH 3 ) 4 F) and one or more of trishydroxyethylammonium fluoride (N(CH 2 OH) 3 HF).
  • the base is preferably selected from the group consisting of ammonia water, quaternary ammonium hydroxides and alcohol amines.
  • the content of the fluoride is preferably 0.020% by mass.
  • the content of the water is preferably 15 to 65% by mass.
  • the polyamino organic amine is preferably one or more of diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, more preferably pentamethyldiethylenetriamine.
  • the content of the polyaminoorganic amine is preferably 0.1 to 20% by mass.
  • the amino acid is preferably one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, aminotriacetic acid and ethylenediaminetetraacetic acid, more preferably iminodiamide.
  • Acetic acid The content of the amino acid is preferably 0.1 to 10% by mass.
  • the tertiary amine is preferably one of triethylamine, tripropylamine, N,N-dimethylethanolamine, N,N-methylethylethanolamine, N-methyldiethanolamine and triethanolamine. Or more, more preferably triethanolamine.
  • the content of the tertiary amine is preferably 0.1 to 20% by mass.
  • the cleaning solution of the present invention may further comprise other conventional additives in the art, such as metal preservatives (such as copper).
  • metal preservatives such as copper
  • Preservative benzotriazole
  • aluminum polyacrylic acid
  • the cleaning liquid of the present invention can be obtained by simply mixing and mixing the above components.
  • the cleaning solution of the present invention can be used over a wide temperature range, generally ranging from room temperature to 55 Torr, and can be applied to various cleaning methods such as batch immersion, batch rotary, and single-piece rotary.
  • the reagents and materials used in the present invention are commercially available.
  • the positive progress of the invention is as follows:
  • the cleaning liquid of the invention has strong cleaning ability, and can clean the metal wire (Via) and the metal pad (Pad) wafer to effectively remove the plasma etching residue, and Metal materials (such as Si0 2 , ion-enhanced tetraethoxysilane silicon dioxide (PETE0S), silicon and low dielectric materials, etc.) and some metal materials (such as Ti, A1 and Cu) have a small corrosion rate. Simultaneously control the corrosion of metals and non-metals.
  • the cleaning liquid of the present invention can be applied to a batch batch, a batch-spray and a single wafer tool, and has a large operation window. Summary of the invention
  • Table 1 shows an example of the plasma etching residue cleaning liquid of the present invention. 1.
  • the cleaning liquids of the respective examples were prepared by uniformly mixing the components according to the formulation in the table.
  • Plasma etching residue cleaning solution of the present invention 1 ⁇ 16 polyol monoalkyl polyamino organic
  • the wire, channel and metal pad were cleaned using the cleaning solution of Example 14 and tested for corrosion rates for metallic aluminum and non-metal (PETE0S).
  • Non-metallic corrosion rate test method for cleaning solution
  • Table 2 shows the cleaning effect and corrosion rate of the cleaning solution of Example 14.
  • the cleaning liquid of the present invention does not substantially erode the metal (such as metal aluminum) and non-metal (such as PETEOS) used in semiconductor fabrication, and the etching rate is close to or lower than that normally required by the semiconductor industry. 2 angstroms per minute. After cleaning the plasma etch residue with the cleaning solution of Example 14, it was found that the plasma etching residue was removed and substantially no corrosion of metals and nonmetals.

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  • Condensed Matter Physics & Semiconductors (AREA)
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Abstract

A plasma etching residues cleaning composition. The composition comprises: dimethylsulfoxide; polyol monoalkyl ethers; water; fluorides; polyamino organoamine; amino acid; tertiary amine.It has the better cleaning capability, larger operation window and better prospect in microelectronics industry field such as semiconductor wafer cleaning. It can remove residues of metal and via and pad wafer in plasma etching process effectively.It has lower corrosion rate to nonmetallic materials( SiO2, PETEOS, Si and low -medium material) and partial metallic materials(Ti, Al and Cu).Its cleaning measure includes batch soaking measure, batch rotary spray measure and singlechip rotary measure.

Description

一种等离子刻蚀残留物清洗液 技术领域  Plasma etching residue cleaning liquid
本发明涉及半导体制造工艺中的一种清洗液，具体的涉及一种等离子刻 蚀残留物清洗液。 技术背景  The present invention relates to a cleaning fluid in a semiconductor manufacturing process, and in particular to a plasma etching residue cleaning fluid. technical background
在半导体元器件制造过程中， 光阻层的涂敷、曝光和成像对元器件的图 案制造来说是必要的工艺步骤。在图案化的最后（即在光阻层的涂敷、成像、 离子植入和蚀刻之后）进行下一工艺步骤之前， 光阻层材料的残留物需彻底 除去。在掺杂步骤中离子轰击会硬化光阻层聚合物， 因此使得光阻层变得不 易溶解从而更难于除去。至今在半导体制造工业中一般使用两步法（干法灰 化和湿蚀刻）除去这层光阻层膜。 第一步利用干法灰化除去光阻层（PR)的 大部分。 第二步利用缓蚀剂组合物湿蚀刻 /清洗工艺除去剩余的光阻层， 其 具体步骤一般为清洗液清洗 /漂洗 /去离子水漂洗。在此过程中， 只能除去残 留的聚合物光阻层和无机物， 而不能攻击损害金属层 （如铝层）。  In the fabrication of semiconductor components, the application, exposure and imaging of the photoresist layer is a necessary process step for the pattern fabrication of the components. The residue of the photoresist layer material needs to be completely removed before the next process step (i.e., after coating, imaging, ion implantation, and etching of the photoresist layer). Ion bombardment in the doping step hardens the photoresist layer polymer, thus making the photoresist layer less soluble and more difficult to remove. Up to now, in the semiconductor manufacturing industry, this layer of photoresist film has been removed using a two-step process (dry ashing and wet etching). The first step uses dry ashing to remove most of the photoresist layer (PR). The second step utilizes the corrosion inhibitor composition wet etch/clean process to remove the remaining photoresist layer. The specific steps are typically rinse cleaning/rinsing/deionized water rinsing. In this process, only the residual polymer photoresist layer and the inorganic material can be removed, and the damaged metal layer (such as the aluminum layer) cannot be attacked.
现有技术中典型的清洗液有以下几种： 胺类清洗液， 半水性胺基（非羟 胺类）清洗液以及氟化物类清洗液。其中，前两类清洗液需要在高温下清洗, 一般在 60°C到 80°C之间， 存在对金属的腐蚀速率较大的问题。而现有的氟化 物类清洗液虽然能在较低的温度（室温到 50Ό )下进行清洗， 但仍然存在着 各种各样的缺点。例如， 不能同时控制金属和非金属基材的腐蚀， 清洗后容 易造成通道特征尺寸的改变， 从而改变半导体结构； 蚀刻速率较大， 使得清 洗操作窗口比较小等。  Typical cleaning solutions in the prior art are as follows: amine cleaning solution, semi-aqueous amine based (non-hydroxyl amine) cleaning solution and fluoride cleaning solution. Among them, the first two types of cleaning liquids need to be cleaned at high temperatures, generally between 60 ° C and 80 ° C, and there is a problem that the corrosion rate of the metal is large. While existing fluorinated cleaning solutions can be cleaned at lower temperatures (room temperature to 50 Torr), there are still various disadvantages. For example, the corrosion of metal and non-metal substrates cannot be controlled at the same time, and the size of the channel features can be changed after cleaning, thereby changing the semiconductor structure; the etching rate is large, so that the cleaning operation window is relatively small.
1 确认本 US 6， 828， 289公开的清洗液组合物包括： 酸性缓冲液、 有机极性溶剂、 含氟物质和水， 且 pH值在 3〜7之间， 其中的酸性缓冲液由有机羧酸或多元酸 与所对应的铵盐组成， 组成比例为 10: 1至 1 : 10之间。 US 5， 698, 503公开 了含氟清洗液， 但大量使用乙二醇， 其清洗液的粘度与表面张力都很大， 从 而影响清洗效果。 US 5， 972， 862公开了含氟物质的清洗组合物， 其包括含氟 物质、 无机或有机酸、 季铵盐和有机极性溶剂， pH为 7〜11， 由于其清洗效 果不是很稳定， 存在多样的问题。 1 Confirmation The cleaning solution composition disclosed in US 6, 828, 289 comprises: an acidic buffer, an organic polar solvent, a fluorine-containing substance and water, and having a pH between 3 and 7, wherein the acidic buffer is composed of an organic carboxylic acid or a plurality of The acid is composed of the corresponding ammonium salt, and the composition ratio is between 10:1 and 1:10. US 5,698, 503 discloses a fluorine-containing cleaning liquid, but a large amount of ethylene glycol is used, and the viscosity and surface tension of the cleaning liquid are large, thereby affecting the cleaning effect. US 5,972,862 discloses a cleaning composition for a fluorine-containing substance comprising a fluorine-containing substance, an inorganic or organic acid, a quaternary ammonium salt and an organic polar solvent, having a pH of from 7 to 11, since the cleaning effect is not very stable, There are various problems.
因此， 为了克服现有清洗液的缺陷， 适应新的清洗要求， 比如环境更为 友善、 低缺陷水平、 低刻蚀率以及较大操作窗口等， 亟待寻求新的清洗液。 发明概要  Therefore, in order to overcome the defects of the existing cleaning liquid and adapt to new cleaning requirements, such as a more environmentally friendly, low defect level, low etching rate and a large operating window, it is urgent to seek a new cleaning liquid. Summary of invention
本发明所要解决的技术问题是为了克服现有的等离子刻蚀残留物清洗 液存在的腐蚀速率大， 不能同时控制金属和非金属的腐蚀， 清洗窗口小， 清 洗能力不足以及清洗效果不稳定等等缺陷， 而提供一种具有较强的清洗能 力， 且腐蚀速率小， 可同时控制金属和非金属的腐蚀， 清洗窗口大， 清洗效 果稳定的等离子体刻蚀残留物清洗液。  The technical problem to be solved by the present invention is to overcome the existing corrosion rate of the plasma etching residue cleaning liquid, and to control the corrosion of metal and non-metal at the same time, the cleaning window is small, the cleaning ability is insufficient, and the cleaning effect is unstable. The defect provides a plasma etching residue cleaning liquid which has a strong cleaning ability and a small corrosion rate, can simultaneously control metal and non-metal corrosion, has a large cleaning window, and has a stable cleaning effect.
本发明的等离子体刻蚀残留物清洗液含有二甲亚砜、 多元醇单烷基醚、 水、 氟化物、 多氨基有机胺、 氨基酸和叔胺。  The plasma etch residue cleaning solution of the present invention contains dimethyl sulfoxide, a polyol monoalkyl ether, water, a fluoride, a polyamino organic amine, an amino acid, and a tertiary amine.
其中， 所述的二甲亚砜（DMSO)的含量较佳的为质量百分比 1~75%。 其中， 所述的多元醇单垸基醚较佳的为乙二醇单烷基醚、 二乙二醇单 垸基醚、 丙二醇单垸基醚、 二丙二醇单烷基醚和三丙二醇单烷基醚中的一种 或多种。 其中， 所述的乙二醇单垸基醚较佳的为乙二醇单甲醚、 乙二醇单乙 醚和乙二醇单丁醚中的一种或多种；所述的二乙二醇单垸基醚较佳的为二乙 二醇单甲醚、 二乙二醇单乙醚和二乙二醇单丁醚中的一种或多种； 所述的丙 二醇单烷基醚较佳的为丙二醇单甲醚、丙二醇单乙醚和丙二醇单丁醚中的一 种或多种； 所述的二丙二醇单垸基醚较佳的为二丙二醇单甲醚、 二丙二醇单 乙醚和二丙二醇单丁醚中的一种或多种；所述的三丙二醇单烷基醚较佳的为 三丙二醇单甲醚。 多元醇单垸基醚的含量较佳的为质量百分比 1~70%。 Wherein, the content of the dimethyl sulfoxide (DMSO) is preferably from 1 to 75% by mass. Wherein, the polyol monodecyl ether is preferably ethylene glycol monoalkyl ether, diethylene glycol monodecyl ether, propylene glycol monodecyl ether, dipropylene glycol monoalkyl ether and tripropylene glycol monoalkyl group. One or more of the ethers. Wherein, the ethylene glycol monodecyl ether is preferably ethylene glycol monomethyl ether or ethylene glycol monoethyl ether One or more of ether and ethylene glycol monobutyl ether; the diethylene glycol monodecyl ether is preferably diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol One or more of monobutyl ether; the propylene glycol monoalkyl ether is preferably one or more of propylene glycol monomethyl ether, propylene glycol monoethyl ether and propylene glycol monobutyl ether; The mercapto ether is preferably one or more of dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether and dipropylene glycol monobutyl ether; and the tripropylene glycol monoalkyl ether is preferably tripropylene glycol monomethyl ether. The content of the polyol monodecyl ether is preferably from 1 to 70% by mass.
其中， 所述的氟化物较佳的选自氟化氢、 或氟化氢与碱形成的盐， 优选 氟化氢 (HF)、氟化铵 (N¾F)、氟化氢铵 (NH4HF2)、四甲基氟化铵 (N(CH3)4F) 和三羟乙基氟化铵 （N(CH2OH)3HF) 中的一种或多种。 所述的碱较佳的选 自氨水、 季胺氢氧化物和醇胺。 所述的氟化物的含量较佳的为质量百分比 0.0 20%。 Wherein, the fluoride is preferably selected from the group consisting of hydrogen fluoride, or a salt formed by hydrogen fluoride and a base, preferably hydrogen fluoride (HF), ammonium fluoride (N3⁄4F), ammonium hydrogen fluoride (NH4HF 2 ), tetramethylammonium fluoride (N). (CH 3 ) 4 F) and one or more of trishydroxyethylammonium fluoride (N(CH 2 OH) 3 HF). The base is preferably selected from the group consisting of ammonia water, quaternary ammonium hydroxides and alcohol amines. The content of the fluoride is preferably 0.020% by mass.
其中， 所述的水的含量较佳的为质量百分比 15~65%。  Wherein, the content of the water is preferably 15 to 65% by mass.
其中， 所述的多氨基有机胺较佳的为二乙烯三胺、 五甲基二乙烯三胺和 多乙烯多胺中的一种或多种， 更佳的为五甲基二乙烯三胺。所述的多氨基有 机胺的含量较佳的为质量百分比 0.1~20%。  Wherein the polyamino organic amine is preferably one or more of diethylenetriamine, pentamethyldiethylenetriamine and polyethenepolyamine, more preferably pentamethyldiethylenetriamine. The content of the polyaminoorganic amine is preferably 0.1 to 20% by mass.
其中， 所述的氨基酸较佳的为 2-氨基乙酸、 2-氨基苯甲酸、 亚氨基二乙 酸， 氨三乙酸和乙二胺四乙酸中的一种或多种， 更佳的为亚氨基二乙酸。 所 述的氨基酸的含量较佳的为质量百分比 0.1~10%。  Wherein, the amino acid is preferably one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, aminotriacetic acid and ethylenediaminetetraacetic acid, more preferably iminodiamide. Acetic acid. The content of the amino acid is preferably 0.1 to 10% by mass.
其中， 所述的叔胺较佳的为三乙胺、 三丙胺、 N， N-二甲基乙醇胺、 N， N-甲基乙基乙醇胺、 N-甲基二乙醇胺和三乙醇胺中的一种或多种， 更佳的为 三乙醇胺。 所述的叔胺的含量较佳的为质量百分比 0.1~20%。  Wherein the tertiary amine is preferably one of triethylamine, tripropylamine, N,N-dimethylethanolamine, N,N-methylethylethanolamine, N-methyldiethanolamine and triethanolamine. Or more, more preferably triethanolamine. The content of the tertiary amine is preferably 0.1 to 20% by mass.
本发明的清洗液还可包含其它本领域常规添加剂， 如金属防腐剂（如铜 的防腐剂： 苯并三氮唑； 又如铝的防腐剂： 聚丙烯酸）。 The cleaning solution of the present invention may further comprise other conventional additives in the art, such as metal preservatives (such as copper). Preservative: benzotriazole; and as a preservative of aluminum: polyacrylic acid).
本发明的清洗液经上述成分简单混合均匀即可制得。本发明的清洗液可 在较大的温度范围内使用，一般在室温到 55Ό范围内，并且可应用于各种清 洗方式， 如批量浸泡式、 批量旋转式和单片旋转式。 本发明所用试剂及原料 均市售可得。  The cleaning liquid of the present invention can be obtained by simply mixing and mixing the above components. The cleaning solution of the present invention can be used over a wide temperature range, generally ranging from room temperature to 55 Torr, and can be applied to various cleaning methods such as batch immersion, batch rotary, and single-piece rotary. The reagents and materials used in the present invention are commercially available.
本发明的积极进步效果在于： 本发明的清洗液清洗能力强， 可对金属线 (Metal ). 通道（Via)和金属垫（Pad) 晶圆进行清洗 有效去除等离子刻 蚀残留物， 而且对非金属材料 （如 Si02、 离子增强四乙氧基硅垸二氧化硅 (PETE0S)、 硅和低介质材料等）和部分金属材料（如 Ti、 A1和 Cu)等有较小 的腐蚀速率， 可同时控制金属和非金属的腐蚀。 此外， 本发明的清洗液可适 用于批量浸泡式 （wet Batch), 批量旋转喷雾式 （Batch- spray) 和单片旋 转式 （single wafer tool ) 的清洗方式， 具有较大操作窗口。 发明内容 The positive progress of the invention is as follows: The cleaning liquid of the invention has strong cleaning ability, and can clean the metal wire (Via) and the metal pad (Pad) wafer to effectively remove the plasma etching residue, and Metal materials (such as Si0 2 , ion-enhanced tetraethoxysilane silicon dioxide (PETE0S), silicon and low dielectric materials, etc.) and some metal materials (such as Ti, A1 and Cu) have a small corrosion rate. Simultaneously control the corrosion of metals and non-metals. In addition, the cleaning liquid of the present invention can be applied to a batch batch, a batch-spray and a single wafer tool, and has a large operation window. Summary of the invention
下面通过实施例的方式进一步说明本发明，但并不因此将本发明限制在 所述的实施例范围之中。  The invention is further illustrated by the following examples, which are not intended to limit the invention.
实施例 1~16 Example 1~16
表 1给出了本发明的等离子刻蚀残留物清洗液的实施例 1 16， 按表中 配方， 将各组分混合均匀， 即可制得各实施例的清洗液。  Table 1 shows an example of the plasma etching residue cleaning liquid of the present invention. 1. The cleaning liquids of the respective examples were prepared by uniformly mixing the components according to the formulation in the table.
表 1 本发明的等离子刻蚀残留物清洗液 1~16 多元醇单烷基 多氨基有机  Table 1 Plasma etching residue cleaning solution of the present invention 1~16 polyol monoalkyl polyamino organic
氟化物 變 叔胺 实 甲 醚 胺  Fluoride change tertiary amine solid methyl ether amine
施 亚 含 水 wt% 含 含 含 例 砜 含量  Shiya water content wt% containing sulfone content
物质 里 物质 物质 量 物质 里 物质 里  In matter, matter, substance, substance, substance
wt%  Wt%
wt% wt% wt% wt% Wt%  Wt% wt% wt% wt% Wt%
二乙  Two
乙二醇单 三乙  Ethylene glycol single triple
1 1 70 28. 69 氟化氢 0. 01 烯三 0. 1 0. 1 0. 1  1 1 70 28. 69 Hydrogen fluoride 0. 01 Alkene 0. 1 0. 1 0. 1
甲醚 胺  Methyl ether
胺 酸 五甲 Amino acid Wujia
2-氨  2-ammonia
三丙 Triple C
70 1 24 氟化铰 1 3 基苯 0. 5 0. 5 乙烯 胺 70 1 24 fluorinated hinge 1 3 base benzene 0. 5 0. 5 ethylene amine
甲酸  Formic acid
三胺  Triamine
( N, N- ( N, N-
11 多乙 亚氨 11 more ethyl imine
乙二醇单 氟化氢 二甲 Ethylene glycol monohydrogen fluoride
15 18 65 0. 5 烯多 1 0. 2 0. 3 丁醚 铰 基乙 15 18 65 0. 5 olefins 1 0. 2 0. 3 butyl ether hinges
胺 乙酸  Amine acetic acid
醇胺 Alcoholamine
N, N- 五甲 N, N- Wujia
甲基 二乙二醇 四甲基 氨三  Methyl diethylene glycol tetramethyl ammonia
10 32 55 1 0. 9 0. 1 1 单甲醚 氟化铵 乙烯 乙酸  10 32 55 1 0. 9 0. 1 1 monomethyl ether ammonium fluoride ethylene acetic acid
乙醇 三胺  Ethanol triamine
胺 五甲 N-甲 三羟乙 乙二  Amine, five, N-methyl, trihydroxyethane, ethylene
二乙二醇  Diethylene glycol
18 1 50 基氟化 20 9. 9 胺四 0. 1 1 单乙醚 乙烯 乙醇  18 1 50 base fluorination 20 9. 9 amine four 0. 1 1 monoethyl ether ethylene ethanol
铵 乙酸  Ammonium acetate
三胺 胺 五甲  Triamine amine
亚氨  Imino
二乙二醇 三乙 Diethylene glycol
50 12 15 氟化铵 0. 1 2. 5 0. 4 20 单丁醚 乙烯 醇胺 50 12 15 Ammonium fluoride 0. 1 2. 5 0. 4 20 Monobutyl ether Ethyl alcohol amine
乙酸  Acetic acid
三胺  Triamine
五甲  Wujia
亚氨  Imino
丙二醇单 三乙 Propylene glycol single
1 3 60 氟化铰 1 20 10 5 甲醚 乙烯 醇胺 1 3 60 fluorinated hinge 1 20 10 5 methyl ether vinyl alcohol amine
乙酸  Acetic acid
三胺  Triamine
五甲  Wujia
三羟乙 亚氨  Trishydroxyethylene
丙二醇单 三乙 Propylene glycol single
30 3 40 基氟化 10 5 2 10 乙醚 乙烯 醇胺 30 3 40 base fluorination 10 5 2 10 diethyl ether vinyl alcohol amine
铰 乙酸  Hinge acetic acid
三胺  Triamine
五甲  Wujia
三羟乙 亚氨  Trishydroxyethylene
丙二醇单 三乙 Propylene glycol single
25 25 15 基氟化 15 3 2 15 丁醚 乙烯 醇胺 25 25 15 base fluorination 15 3 2 15 butyl ether vinyl alcohol amine
铰 乙酸  Hinge acetic acid
三胺  Triamine
五甲  Wujia
三羟乙 亚氨  Trishydroxyethylene
二丙二醇 三乙 Dipropylene glycol
40 20 20 基氟化 6 12 1 1 单甲醚 乙烯 醇胺 40 20 20 base fluorinated 6 12 1 1 monomethyl ether vinyl alcohol amine
铰 乙酸  Hinge acetic acid
三胺  Triamine
五甲  Wujia
三羟乙 亚氨  Trishydroxyethylene
二丙二醇 三乙 Dipropylene glycol
12 36 30 基氟化 3 7 5 7 单乙醚 乙烯 醇胺 12 36 30 base fluorination 3 7 5 7 diethyl ether ethylene alcohol amine
铰 乙酸  Hinge acetic acid
三胺 五甲 Triamine Wujia
亚氨  Imino
二丙二醇 三乙  Dipropylene glycol
12 9 60 25 氟化铰 0. 5 2 0. 5 3  12 9 60 25 Fluoride hinge 0. 5 2 0. 5 3
单丁醚 乙¾ 醇胺  Monobutyl ether, ethyl 3⁄4 alcoholamine
乙酸  Acetic acid
三胺  Triamine
五甲  Wujia
亚氨  Imino
三丙二醇 三乙  Tripropylene glycol
13 60 10 25 氟化铰 0. 5 2 0. 5 2  13 60 10 25 Fluoride hinge 0. 5 2 0. 5 2
单甲醚 乙稀 醇胺  Monomethyl ether
乙酸  Acetic acid
三胺  Triamine
五甲  Wujia
亚氨  Imino
二丙二醇 三乙  Dipropylene glycol
14 27 37 23 氟化铰 1 5 2 5  14 27 37 23 Fluoride hinge 1 5 2 5
单甲醚 乙烯 醇胺  Monomethyl ether vinyl alcohol amine
乙酸  Acetic acid
三胺  Triamine
三羟乙 乙二  Trishydroxyethylene
三丙 基氟化 1 胺四 0. 1 2  Tripropyl fluorinated 1 amine IV 0. 1 2
五甲 胺 铰 乙酸  Pentamamine hinge acetic acid
乙二醇单  Ethylene glycol single
15 75 1 16. 8 1 N, N- 甲醚 乙烯 亚氨  15 75 1 16. 8 1 N, N-methyl ether ethylene imine
四甲基 二甲  Tetramethyl dimethyl
1 三胺 0. 1 2 氟化铵  1 triamine 0. 1 2 ammonium fluoride
乙酸  Acetic acid
醇胺 二乙  Alcohol amine
乙二醇单  Ethylene glycol single
2 烯三 2  2 ene three 2
甲醚  Methyl ether
三羟乙 胺 亚氨  Trihydroxyethylamine imine
三乙  Three B
16 60 20 基氟化 5 五甲 2 5  16 60 20 base fluorination 5 five armor 2 5
醇胺 三丙二醇 铰 乙酸  Alcoholamine tripropylene glycol hinge acetic acid
2 2  twenty two
单甲醚 乙烯  Monomethyl ether
三胺  Triamine
效果实施例 Effect embodiment
采用实施例 14的清洗液对金属线、 通道和金属垫进行清洗， 并测试其 对金属铝和非金属 （PETE0S) 的腐蚀速率。  The wire, channel and metal pad were cleaned using the cleaning solution of Example 14 and tested for corrosion rates for metallic aluminum and non-metal (PETE0S).
清洗液的金属腐蚀速率测试方法：  Test method for metal corrosion rate of cleaning solution:
1 ) 利用 Napson四点探针仪测试 4*4cm铝空白硅片的电阻初值 （Rsl ); 1) Using a Napson four-point prober to test the initial resistance value (Rsl) of a 4*4 cm aluminum blank wafer;
2)将该 4*4cm铝空白硅片浸泡在预先已经恒温到 35°C的溶液中 30分钟;2) immersing the 4*4 cm aluminum blank silicon wafer in a solution which has been previously thermostated to 35 ° C for 30 minutes;
3)取出该 4*4cm铝空白硅片， 用去离子水清洗， 高纯氮气吹干， 再利 用 Napson四点探针仪测试 4*4cm铝空白硅片的电阻值 （Rs2); 3) Take out the 4*4cm aluminum blank silicon wafer, wash it with deionized water, dry it with high purity nitrogen, and then benefit The resistance value (Rs2) of the 4*4 cm aluminum blank wafer was tested with a Napson four-point prober;
4) 重复第二和第三步再测试一次， 电阻值记为 Rs3;  4) Repeat the second and third steps and test again, the resistance value is recorded as Rs3;
5) 把上述电阻值和浸泡时间输入到合适的程序可计算出其腐蚀速率。 清洗液的非金属腐蚀速率测试方法：  5) Enter the resistance value and soak time into the appropriate program to calculate the corrosion rate. Non-metallic corrosion rate test method for cleaning solution:
1 ) 利用 Nanospec6100测厚仪测试 4*4cm PETEOS硅片的厚度 （T1 ); 1) Test the thickness of the 4*4cm PETEOS wafer (T1) using the Nanospec6100 thickness gauge;
2 )将该 4*4cmPETE0S硅片浸泡在预先已经恒温到 35°C的溶液中 30分钟;2) immersing the 4*4 cm PETE0S silicon wafer in a solution which has been previously thermostated to 35 ° C for 30 minutes;
3)取出该 4*4cmPETE0S硅片， 用去离子水清洗， 高纯氮气吹干， 再利用 Nanospec6100测厚仪测试 4*4cmPETE0S硅片的厚度 （T2); 3) Remove the 4*4cm PETE0S silicon wafer, wash it with deionized water, dry it with high purity nitrogen, and test the thickness of the 4*4cm PETE0S silicon wafer (T2) with Nanospec6100 thickness gauge;
4) 重复第二和第三步再测试一次厚度记为 T3;  4) Repeat the second and third steps and test the thickness once again as T3;
5) 把上述厚度值和浸泡时间输入到合适的程序可计算出其腐蚀速率。 表 2给出了实施例 14的清洗液的清洗效果和腐蚀速率。  5) Enter the above thickness value and soak time into a suitable program to calculate the corrosion rate. Table 2 shows the cleaning effect and corrosion rate of the cleaning solution of Example 14.
实施例 14的清洗液的清洗效果和腐蚀速率  Cleaning effect and corrosion rate of the cleaning solution of Example 14
Figure imgf000009_0001
Figure imgf000009_0001
从表 2中可以看出： 本发明的清洗液对半导体制成中所用的金属（如金 属铝）和非金属（如 PETEOS)基本不会侵蚀， 其腐蚀速率均接近或小于半导 体业界通常所要求的 2埃每分钟。 用实施例 14的清洗液对等离子刻蚀残留 物进行清洗后发现， 其等离子刻蚀残留物均被去除， 而且基本没有腐蚀金属 和非金属。  It can be seen from Table 2 that the cleaning liquid of the present invention does not substantially erode the metal (such as metal aluminum) and non-metal (such as PETEOS) used in semiconductor fabrication, and the etching rate is close to or lower than that normally required by the semiconductor industry. 2 angstroms per minute. After cleaning the plasma etch residue with the cleaning solution of Example 14, it was found that the plasma etching residue was removed and substantially no corrosion of metals and nonmetals.

Claims

权利要求 Rights request
1. 一种等离子体刻蚀残留物清洗液， 其特征在于含有： 二甲亚砜、 多元醇 单垸基醚、 水、 氟化物、 多氨基有机胺、 氨基酸和叔胺。 A plasma etching residue cleaning liquid comprising: dimethyl sulfoxide, a polyhydric monomethyl ether, water, a fluoride, a polyamino organic amine, an amino acid, and a tertiary amine.
2. 如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 二甲亚砜的含量为质量百分比 1~75%。  2. The plasma etching residue cleaning solution according to claim 1, wherein the dimethyl sulfoxide is present in an amount of from 1 to 75% by mass.
3. 如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 多元醇单垸基醚为乙二醇单垸基醚、 二乙二醇单烷基醚、 丙二醇单垸基 醚、 二丙二醇单烷基醚和三丙二醇单烷基醚中的一种或多种。  3. The plasma etch residue cleaning solution according to claim 1, wherein: the polyol monodecyl ether is ethylene glycol monodecyl ether, diethylene glycol monoalkyl ether, propylene glycol. One or more of monodecyl ether, dipropylene glycol monoalkyl ether, and tripropylene glycol monoalkyl ether.
4. 如¾1利要求 3所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 乙二醇单垸基醚为乙二醇单甲醚、 乙二醇单乙醚和乙二醇单丁醚中的一 种或多种； 所述的二乙二醇单烷基醚为二乙二醇单甲醚、 二乙二醇单乙 醚和二乙二醇单丁醚中的一种或多种； 所述的丙二醇单垸基醚为丙二醇 单甲醚、 丙二醇单乙醚和丙二醇单丁醚中的一种或多种； 所述的二丙二 醇单烷基醚为二丙二醇单甲醚、 二丙二醇单乙醚和二丙二醇单丁醚中的 一种或多种； 所述的三丙二醇单'烷基醚为三丙二醇单甲醚。  4. The plasma etching residue cleaning solution according to claim 3, wherein the ethylene glycol monodecyl ether is ethylene glycol monomethyl ether, ethylene glycol monoethyl ether and ethylene glycol. One or more of monobutyl ether; the diethylene glycol monoalkyl ether is one of diethylene glycol monomethyl ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether or The propylene glycol monodecyl ether is one or more of propylene glycol monomethyl ether, propylene glycol monoethyl ether and propylene glycol monobutyl ether; the dipropylene glycol monoalkyl ether is dipropylene glycol monomethyl ether, two One or more of propylene glycol monoethyl ether and dipropylene glycol monobutyl ether; the tripropylene glycol mono-alkyl ether is tripropylene glycol monomethyl ether.
5. 如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 多元醇单垸基醚的含量为质量百分比 1~70%。  The plasma etching residue cleaning liquid according to claim 1, wherein the content of the polyol monodecyl ether is 1 to 70% by mass.
6. 如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 氟化物选自氟化氢、 氟化铵、 氟化氢铵、 四甲基氟化铵和三羟乙基氟化 铵中的一种或多种。  6. The plasma etching residue cleaning solution according to claim 1, wherein: the fluoride is selected from the group consisting of hydrogen fluoride, ammonium fluoride, ammonium hydrogen fluoride, tetramethylammonium fluoride, and trishydroxyethyl fluoride. One or more of ammonium salts.
7. 如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 氟化物的含量为质量百分比 0.01~20%。 7. The plasma etching residue cleaning solution according to claim 1, wherein the fluoride content is 0.01 to 20% by mass.
8. 如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 水的含量为质量百分比 15~65%。 The plasma etching residue cleaning liquid according to claim 1, wherein the water content is 15 to 65% by mass.
9. 如权利要求 1 所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 多氨基有机胺为二乙烯三胺、 五甲基二乙烯三胺和多乙烯多胺中的一种 或多种。  9. The plasma etch residue cleaning solution according to claim 1, wherein: the polyamino organic amine is one of diethylenetriamine, pentamethyldiethylenetriamine, and polyethenepolyamine. Kind or more.
10.如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 多氨基有机胺的含量为质量百分比 0.1〜20%。  The plasma etching residue cleaning solution according to claim 1, wherein the polyaminoorganamine is contained in an amount of 0.1 to 20% by mass.
11.如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 氨基酸为 2-氨基乙酸、 2-氨基苯甲酸、 亚氨基二乙酸、 氨三乙酸和乙二 胺四乙酸中的一种或多种。  The plasma etching residue cleaning solution according to claim 1, wherein the amino acid is 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, aminotriacetic acid and ethylenediamine. One or more of tetraacetic acid.
12.如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 氨基酸的含量为质量百分比 0.1~10%。  The plasma etching residue cleaning solution according to claim 1, wherein the amino acid content is 0.1 to 10% by mass.
13.如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 叔胺为三乙胺、 三丙胺、 N， N-二甲基乙醇胺、 N， N-甲基乙基乙醇胺、 N -甲基二乙醇胺和三乙醇胺中的一种或多种。  The plasma etching residue cleaning solution according to claim 1, wherein the tertiary amine is triethylamine, tripropylamine, N,N-dimethylethanolamine, N, N-methyl. One or more of ethylethanolamine, N-methyldiethanolamine, and triethanolamine.
14.如权利要求 1所述的等离子体刻蚀残留物清洗液， 其特征在于： 所述的 叔胺的含量为质量百分比 0.1~20%。  The plasma etching residue cleaning solution according to claim 1, wherein the tertiary amine is contained in an amount of 0.1 to 20% by mass.
PCT/CN2008/001758 2007-10-19 2008-10-20 A plasma etching residues cleaning composition WO2009052707A1 (en)

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Publication number Priority date Publication date Assignee Title
CN102827707A (en) * 2011-06-16 2012-12-19 安集微电子科技(上海)有限公司 Plasma etching residue cleaning fluid
CN102827708A (en) * 2011-06-16 2012-12-19 安集微电子（上海）有限公司 Plasma etching residue cleaning fluid
CN102808190B (en) * 2012-08-31 2014-06-25 昆山艾森半导体材料有限公司 Environmentally-friendly weak alkaline low-temperature deburring softening solution, and preparation method and use method thereof
WO2017110885A1 (en) * 2015-12-25 2017-06-29 荒川化学工業株式会社 Cleaning agent composition for electronic material, cleaning agent stock solution, and method for cleaning electronic material
CN107589637A (en) * 2017-08-29 2018-01-16 昆山艾森半导体材料有限公司 A kind of fluorine-containing aluminum steel cleaning fluid
CN109989069B (en) * 2019-04-11 2021-06-01 上海新阳半导体材料股份有限公司 Oil removing agent, preparation method and application thereof
CN110003996B (en) * 2019-05-21 2021-03-23 广东剑鑫科技股份有限公司 Soak solution and preparation method and use method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215736A (en) * 2000-02-04 2001-08-10 Jsr Corp Photoresist removing solution composition, removing method and circuit board
CN1488740A (en) * 2002-09-09 2004-04-14 ������ѧ��ʽ���� Cleaning composition
CN1900363A (en) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 Cleaning liquid and its use
CN1966636A (en) * 2005-11-15 2007-05-23 安集微电子（上海）有限公司 Cleaning liquid composition

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001215736A (en) * 2000-02-04 2001-08-10 Jsr Corp Photoresist removing solution composition, removing method and circuit board
CN1488740A (en) * 2002-09-09 2004-04-14 ������ѧ��ʽ���� Cleaning composition
CN1900363A (en) * 2005-07-21 2007-01-24 安集微电子（上海）有限公司 Cleaning liquid and its use
CN1966636A (en) * 2005-11-15 2007-05-23 安集微电子（上海）有限公司 Cleaning liquid composition

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