WO2009128324A1 - Procédé de rugosification de la surface d’un substrat et procédé de fabrication d’un dispositif photovoltaïque - Google Patents

Procédé de rugosification de la surface d’un substrat et procédé de fabrication d’un dispositif photovoltaïque Download PDF

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WO2009128324A1
WO2009128324A1 PCT/JP2009/055678 JP2009055678W WO2009128324A1 WO 2009128324 A1 WO2009128324 A1 WO 2009128324A1 JP 2009055678 W JP2009055678 W JP 2009055678W WO 2009128324 A1 WO2009128324 A1 WO 2009128324A1
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Prior art keywords
substrate
etching
roughening
film
resistant film
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PCT/JP2009/055678
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English (en)
Japanese (ja)
Inventor
邦彦 西村
松野　繁
Original Assignee
三菱電機株式会社
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Priority to JP2010508160A priority Critical patent/JPWO2009128324A1/ja
Priority to CN200980113397.2A priority patent/CN102007582A/zh
Priority to DE112009000924T priority patent/DE112009000924T9/de
Publication of WO2009128324A1 publication Critical patent/WO2009128324A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Definitions

  • the present invention relates to a substrate roughening method and a photovoltaic device manufacturing method.
  • the reflectance at a wavelength of 628 nm is about 36% for silicon whose surface is mirror-polished, and about 15% when a (100) plane silicon single crystal substrate is wet etched, whereas polycrystalline silicon When the surface of the substrate is wet-etched, it is about 27 to 30%.
  • a protective mask having an opening is formed by applying a resin to the surface of the polycrystalline silicon substrate, and the opening is passed through this opening.
  • a method has been proposed in which grooves or recesses are formed in the substrate surface by performing air blasting on the substrate surface, and subsequently the protective mask is removed by performing air blasting (see, for example, Patent Document 1). ).
  • the present invention has been made in view of the above, and a substrate roughening method and a photovoltaic device capable of uniformly finely roughening a substrate surface while maintaining the quality of the substrate surface It aims at obtaining the manufacturing method of this.
  • FIG. 1 is a cross-sectional view showing a p-type polycrystalline silicon substrate having a surface roughened by the substrate roughening method according to the first embodiment of the present invention.
  • FIGS. 2-1 is sectional drawing for demonstrating the process of the roughening method of the board
  • FIGS. FIGS. 2-2 is sectional drawing for demonstrating the process of the roughening method of the board
  • FIGS. FIG. 2-3 is a cross-sectional view for explaining a step of the substrate roughening method according to the first embodiment of the present invention.
  • FIGS. 2-4 is sectional drawing for demonstrating the process of the roughening method of the board
  • FIG. 3 is a diagram for explaining an example of a blasting apparatus used when a plurality of fine openings that are fine holes are opened in the etching resistant film in the method for roughening a substrate according to the first embodiment of the present invention. It is a schematic diagram.
  • FIG. 4A is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
  • FIG. 4B is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
  • FIG. 4-3 is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
  • FIG. 4A is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
  • FIG. 4B is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching
  • FIG. 4-4 is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
  • FIG. 5-1 is a cross-sectional view showing a photovoltaic device manufactured using the substrate according to Embodiment 1 of the present invention.
  • FIG. 5-2 is a top view of the photovoltaic device manufactured using the substrate according to Embodiment 1 of the present invention.
  • FIG. 6A is a sectional view for explaining a step of the substrate roughening method according to the second embodiment of the present invention.
  • FIG. 6B is a cross-sectional view for explaining the steps of the substrate roughening method according to the second embodiment of the present invention.
  • FIG. 6-3 is a cross-sectional view for explaining a step of the substrate roughening method according to the second embodiment of the present invention.
  • FIG. 6-4 is a cross-sectional view for explaining a step of the substrate roughening method according to the second embodiment of the present invention.
  • FIGS. 6-5 is sectional drawing for demonstrating the process of the roughening method of the board
  • FIG. 6-6 is a cross-sectional view for explaining a step in the substrate roughening method according to the second embodiment of the present invention.
  • FIG. 7 is a diagram for explaining a blasting process of the substrate roughening method according to the first embodiment of the present invention, and is a diagram showing a positional relationship between the traveling direction of the blast abrasive grains and the substrate.
  • FIG. 8 is a diagram for explaining the blasting process of the method for roughening a substrate according to the third embodiment of the present invention, and shows the positional relationship between the traveling direction of the blast abrasive grains and the substrate.
  • FIG. 1 shows a substrate whose surface has been roughened by the method for roughening a substrate according to the present embodiment, and a p-type polycrystalline silicon substrate 1 which is a substrate for a solar cell as a photovoltaic device. It is sectional drawing which shows (henceforth the board
  • texture recesses 4 having a substantially hemispherical shape with an average pitch between holes of approximately 10 ⁇ m are formed substantially uniformly on the substrate surface.
  • the substrate roughening method according to the first embodiment includes a step 1 for forming a protective film on the surface of the substrate, a step 2 for forming an opening in the protective film by subjecting the protective film to blasting, and an opening A step 3 of etching the surface of the substrate on which the protective film is formed using the protective film on which the protective film is formed under a condition that the protective film is resistant, and a step 4 of removing the protective film.
  • FIGS. 2-1 to 2-4 are cross-sectional views for explaining the steps of the substrate roughening method according to the first embodiment.
  • the substrate roughening method according to the first embodiment will be described below with reference to these drawings.
  • step 1 as shown in FIG. 2-1, a protective film is formed on the surface of one surface side of a p-type polycrystalline silicon substrate 1a (hereinafter referred to as substrate 1a) which is a target to be roughened. Then, a film 2 (hereinafter referred to as an etching resistant film) 2 having etching resistance against etching described later is formed.
  • substrate 1a a p-type polycrystalline silicon substrate 1a
  • etching resistant film 2 having etching resistance against etching described later is formed.
  • the substrate 1a in the present embodiment is a polycrystalline silicon substrate that is most often used for consumer solar cells. After being sliced from a polycrystalline silicon ingot with a multi-wire saw, wet etching using an acid or alkali solution is performed. In this case, the damage when slicing is removed.
  • the thickness of the substrate 1a after removing the damage is 200 ⁇ m and the dimension is 15 cm ⁇ .
  • substrate 1a is not limited to this, It can change suitably.
  • the etching resistant film 2 is an 80 nm thick silicon nitride film (hereinafter referred to as SiN film) formed by plasma CVD.
  • SiN film silicon nitride film
  • a SiN film is used as the etching resistant film 2
  • an amorphous silicon film ( réelle-Si) is used as the etching resistant film 2.
  • a like carbon film or the like may be used.
  • the film thickness of the etching resistant film 2 is preferably 10 nm to 500 nm. If the film thickness of the etching resistant film 2 is 10 nm or more, the etching resistant film is slightly cut when etching is performed on one surface of the substrate 1a on which the etching resistant film 2 is formed in the subsequent step 3. Even if it is applied, it functions as an etching resistant film. Moreover, if the film thickness of the etching resistant film 2 is 500 nm or less, the fine hole processing can be reliably performed on the etching resistant film 2 in the subsequent step 2.
  • step 2 as shown in FIG. 2-2, fine hole processing is performed on the etching resistant film 2. That is, a plurality of fine openings 3 are opened in the etching resistant film 2 by blast processing.
  • alumina abrasive grains are used as abrasive grains for blasting.
  • the present inventors have sought the most suitable abrasive for opening an opening in the SiN film that is the etching resistant film 2 without causing cracks in the substrate. As a result of repeated research, the alumina abrasive is most suitable. It came to the knowledge that there is.
  • the abrasive grains for the blasting treatment are not limited to this, and other abrasive grains other than the alumina abrasive grains may be used as long as the fine openings 3 can be opened in the etching resistant film 2.
  • FIG. 3 shows an apparatus (hereinafter referred to as a blasting apparatus) used for opening a plurality of fine openings 3 as fine holes in the etching resistant film 2 in the substrate roughening method according to the first embodiment. It is a schematic diagram for demonstrating an example.
  • the blasting apparatus shown in FIG. 3 includes an abrasive spray nozzle 11, an abrasive tank 12, and a compressed air cylinder 13.
  • the blast abrasive grains 14 supplied from the abrasive tank 12 are ejected from the abrasive grain injection nozzle 11 by the compressed air supplied from the compressed air cylinder 13, and the ejected blast abrasive grains 14 are processed.
  • the surface is cut by colliding with the surface.
  • the blasting abrasive grains 14 are moved in the in-plane direction of the substrate 1 in a state where the blasting abrasive grains 14 are ejected from the abrasive grain ejection nozzles 11, so that the blasting abrasive grains 14 are placed on the entire surface of the substrate. Can act on. Thereby, the fine opening 3 can be opened in the etching resistant film 2 by uniformly cutting the entire surface of the substrate.
  • step 3 etching is performed on one surface of the substrate 1a on which the etching resistant film 2 is formed using the etching resistant film 2 that has been subjected to the fine hole processing as shown in FIG. A texture depression 4 is formed.
  • etching for example, wet etching using a hydrofluoric acid nitric acid mixed solution is performed.
  • the mixing ratio in preparing the hydrofluoric acid nitric acid mixture is hydrofluoric acid 1: nitric acid 20: water 10.
  • the mixing ratio of the etching solution can be appropriately changed to an appropriate mixing ratio in view of the etching rate and the etching shape.
  • dry etching such as plasma etching may be used for etching.
  • the side etching part 5 is also generated on the lower side of the etching resistant film 2, and the flat part region on the surface of the substrate 1a can be reduced.
  • the same shape can be obtained by dry etching, and etching isotropic conditions, that is, plasma etching, reactive ion etching, etching under relatively high gas pressure, or plasmaless
  • gas etching or the like By using gas etching or the like, a substantially hemispherical texture recess 4a can be obtained.
  • the textured dent 4 is formed by applying blasting instead of etching
  • the textured dent 4c is formed only directly under the fine opening 3 of the etching resistant film 2 as shown in FIG. 4-4. .
  • the substrate 1a is cut by using straight abrasive grains.
  • the side etching under the etching resistant film 2 does not proceed. Accordingly, the flat portion of the surface of the substrate 1a remains in almost all the region covered with the etching resistant film 2, which becomes a factor that hinders the suppression of reflectance.
  • step 2 determination of conditions for the blasting process in step 2 will be described. As blasting conditions, it is necessary to adjust the air pressure, the air flow rate, the nozzle-substrate distance, and the sweep speed. In the first embodiment, the diameter of the hole (fine opening 3) opened in the etching resistant film 2 was adjusted to 2 ⁇ m and the average pitch between holes was 10 ⁇ m.
  • the aspect ratio of the textured depression 4 formed in step 3 that is, the ratio of the depth of the textured depression 4 to the entrance diameter of the textured depression 4 becomes small, and the reflectance It becomes a factor inhibiting inhibition.
  • the pitch between the holes determines the pitch of the texture depressions 4 obtained by etching. If the pitch of the texture dents 4 is large, it takes a long time to eliminate the flat portion on the surface of the substrate 1, and the depth of the texture dents 4 also increases. This causes a disconnection during electrode formation when a photovoltaic device is manufactured using the substrate 1 later, and therefore it is necessary to set the pitch appropriately.
  • step 4 the textured dent 4 is exposed by removing the etching resistant film 2.
  • a hydrofluoric acid aqueous solution can be used to remove the etching resistant film 2.
  • a texture structure having a fine pattern of about 10 ⁇ m, for example, can be formed on the surface of the substrate 1 as shown in FIG.
  • FIGS. 5A and 5B are diagrams showing a photovoltaic device manufactured using the substrate 1 described above.
  • FIG. 5A is a cross-sectional view of the photovoltaic device
  • FIG. It is a top view of an electric power apparatus.
  • the photovoltaic device shown in FIGS. 5A and 5B is a first conductive type semiconductor substrate having an N layer 21a which is an impurity diffusion layer in which a second conductive type impurity element is diffused in the substrate surface layer.
  • a back electrode 24 formed on the surface (back surface) opposite to the light receiving surface of the semiconductor substrate 21.
  • an N-type semiconductor substrate may include a P layer.
  • the light receiving surface side electrode 23 includes a grid electrode 23a and a bus electrode 23b of the photovoltaic device, and FIG. 5A shows a cross-sectional view in a cross section perpendicular to the longitudinal direction of the grid electrode 23a.
  • the semiconductor substrate 21 is a 15 cm square photovoltaic device using the substrate 1 having a textured structure formed on the surface of the substrate using the substrate roughening method described above.
  • a paste mixed with silver is printed on the light-receiving surface of the substrate 1 in a comb shape by screen printing, and a paste mixed with aluminum is printed on the entire back surface of the substrate 1 by screen printing, and then a baking process is performed.
  • the light receiving surface side electrode 23 and the back surface electrode 24 are formed. Firing is performed at 760 ° C. in an air atmosphere, for example.
  • the photovoltaic device shown in FIGS. 5-1 and 5-2 is manufactured.
  • a substrate obtained by etching a polycrystalline silicon substrate with an alkaline aqueous solution was produced. And the light reflection characteristic was evaluated with the spectrophotometer with respect to the board
  • the short-circuit current density is significantly increased and the photoelectric conversion efficiency is improved as compared with the photovoltaic device of the comparative example.
  • the suppression of the surface reflection loss of the substrate 1 is successfully achieved by configuring the photovoltaic device using the substrate 1 roughened by the method of roughening the substrate according to the first embodiment. It has been found that the short-circuit current density is greatly increased and contributes to the improvement of photoelectric conversion efficiency.
  • the substrate roughening method according to the first embodiment since blasting is used for micro-hole processing of the etching resistant film 2, an expensive apparatus such as lithography and a redundant manufacturing process are required. Fine hole processing of the etching resistant film 2 can be realized without necessity, and fine roughening can be easily and uniformly performed on the surface of the substrate 1a.
  • the etching resistant film 2 is formed with a small pitch of about 10 ⁇ m. It is possible to perform patterning by processing a fine hole. Thereby, the fine roughening can be uniformly performed on the surface of the substrate 1a.
  • the substrate roughening method according to the first embodiment since wet or dry isotropic etching is used to roughen the substrate 1a, it is possible to carry out fine uneven processing without being restricted by the abrasive grain size. .
  • the etching proceeds isotropically to the lower side of the etching resistant film 2 and so-called side etching processing can be performed, an unnecessary flat portion does not remain below the etching resistant film 2.
  • the roughening can be easily and uniformly performed on the surface of the substrate 1a.
  • the roughening method of the substrate according to the first embodiment it is possible to uniformly perform fine roughening of the substrate surface while maintaining the quality of the substrate surface, and an excellent antireflection effect.
  • the substrate to be exhibited can be roughened.
  • FIG. 6-1 to 6-6 are cross-sectional views for explaining the steps of the substrate roughening method according to the second embodiment.
  • the substrate roughening method according to the second embodiment will be described below with reference to these drawings. Note that the same members as those in FIGS. 2-1 to 2-4 are omitted from the detailed description by omitting the same reference numerals.
  • Step 1 is the same as step 1 of the substrate roughening method according to the first embodiment.
  • an etching resistant film 2 is formed as a protective film on the surface of one surface of the substrate 1a. Form.
  • a liquid film 31 is formed on the surface of the etching resistant film 2 as shown in FIG. 6-2.
  • a material for the liquid film hexanol (boiling point 157 ° C.), which is a high boiling point material, was used.
  • a two-fluid spray method is used, and for example, the coating conditions are adjusted so that the liquid thickness is about 5 ⁇ m over the entire surface of the etching resistant film 2.
  • the blast abrasive grains have a plurality of sharp protrusions on the surface of the abrasive grains, and when the abrasive grains collide with the etching resistant film 2, these protrusions break through the etching resistant film 2, so that the etching resistant film A fine opening 3 is formed in 2.
  • the protrusions enter a certain depth with respect to the substrate 1a under the etching resistant film 2, and the abrasive grains are detached from the etching resistant film 2. become unable.
  • the liquid film 31 is formed on the etching resistant film 2 in order to suppress the entry of abrasive grains to the substrate 1a.
  • the speed of the abrasive grains can be suppressed immediately before reaching the etching resistant film 2, and the abrasive grains are fine openings in the etching resistant film 2. 3 can be prevented.
  • the liquid thickness of the liquid film 31 when an experiment was conducted by changing the liquid thickness of the liquid film 31, when the film thickness of the liquid film 31 was 1 ⁇ m or less, an effect of suppressing the speed of the abrasive grains was hardly obtained. It was. On the other hand, when the film thickness of the liquid film 31 is 10 ⁇ m or more, the abrasive particles that have entered the liquid film 31 cannot be detached from the liquid film 31. For these reasons, the liquid thickness is set to 5 ⁇ m in the second embodiment. However, since the optimal film thickness of the liquid film 31 varies depending on the viscosity, surface tension, and the like of the material of the liquid film 31, an optimal value may be set as appropriate.
  • the material of the liquid film 31 hexanol, which is a high-boiling point material, is used so that the change in the liquid thickness due to evaporation is small between application and blasting, which is the next process, but other liquids can also be used.
  • the liquid film 31 can be formed in consideration of a change in liquid thickness due to evaporation before blasting.
  • the formation method of the liquid film 31 can be selected from methods such as an ink jet method, a spin coat method, a dip pulling method, a roll coat method, and an ultrasonic spray method in addition to the two-fluid spray method.
  • step 2 as shown in FIG. 6-3, the liquid film 31 and the etching resistant film 2 are subjected to fine hole processing. That is, a plurality of fine openings 3 are opened in the liquid film 31 and the etching resistant film 2 by blast processing.
  • step 2-2 the liquid film 31 is removed as shown in FIG. 6-4.
  • the substrate 1a can be dried and removed by heating in a drying furnace at 170 ° C. for 10 minutes.
  • Step 4 is the same as Step 4 of the substrate roughening method according to the first embodiment, and the texture dent 4 is exposed by removing the etching resistant film 2.
  • a hydrofluoric acid aqueous solution can be used to remove the etching resistant film 2.
  • a texture structure having a fine pattern of about 10 ⁇ m, for example, can be formed on the surface of the substrate 1.
  • the blast processing is used for the micro-hole processing of the etching resistant film 2, so Fine hole processing of the etching resistant film 2 can be realized without requiring an expensive apparatus and a redundant manufacturing process, and fine roughening can be easily and uniformly performed on the surface of the substrate 1a. it can.
  • a thick film process such as resin printing is not used for patterning the etching resistant film 2 as in the first embodiment, so that the thickness is about 10 ⁇ m. It is possible to pattern by patterning fine holes in the etching resistant film 2 with a small pitch. Thereby, the fine roughening can be uniformly performed on the surface of the substrate 1a.
  • the substrate roughening method according to the second embodiment since wet or dry isotropic etching is used for roughening the substrate 1a as in the case of the first embodiment, it is limited by the abrasive grain size. It is possible to carry out fine unevenness processing without any problems.
  • the etching proceeds isotropically to the lower side of the etching resistant film 2 and so-called side etching processing can be performed, an unnecessary flat portion does not remain below the etching resistant film 2.
  • the roughening can be easily and uniformly performed on the surface of the substrate 1a.
  • the roughening method of the substrate according to the second embodiment it is possible to uniformly and reliably perform fine roughening of the substrate surface while maintaining the quality of the substrate surface, and excellent reflection It is possible to roughen the substrate that exhibits the suppression effect.
  • FIG. 7 is a diagram illustrating a blasting process in the process 2 described in the first embodiment, and is a diagram illustrating a positional relationship between the traveling direction D1 of the blast abrasive grains 14 and the substrate 1a.
  • the blowing direction of the blast abrasive grains 14 enters substantially perpendicular to the surface of the substrate 1a.
  • Direction direction (direction of the perpendicular 15 with respect to the substrate surface).
  • the blast abrasive grains 14 have both a speed component in the direction of entering the etching resistant film 2 and a speed component in the direction of sliding on the surface of the substrate 1a.
  • the detachment of the blast abrasive grains 14 is promoted, and the stay of the blast abrasive grains 14 in the fine openings 3 of the etching resistant film 2 can be prevented.
  • the inventors obtained the most suitable penetration angle ⁇ that can prevent the blast abrasive grains 14 from staying in the fine openings 3 of the etching resistant film 2, and as a result of repeated experiments, the penetration angle ⁇ was 10 degrees. When the angle is less than 60 °, the retention prevention effect of the blast abrasive grains 14 is not exhibited at all. When the angle exceeds 60 degrees, the fine opening 3 cannot be formed in the etching resistant film 2.
  • blast processing is used for micro-hole processing of the etching resistant film 2 as in the first embodiment.
  • Fine hole processing of the etching resistant film 2 can be realized without requiring an expensive apparatus and a redundant manufacturing process, and fine roughening can be easily and uniformly performed on the surface of the substrate 1a. it can.
  • the substrate roughening method according to the third embodiment as in the case of the first embodiment, a thick film process such as resin printing is not used for patterning of the etching resistant film 2, so that the thickness is about 10 ⁇ m. It is possible to pattern by patterning fine holes in the etching resistant film 2 with a small pitch. Thereby, the fine roughening can be uniformly performed on the surface of the substrate 1a.
  • the substrate roughening method according to the third embodiment since wet or dry isotropic etching is used to roughen the substrate 1a as in the case of the first embodiment, it is limited by the abrasive grain size. It is possible to carry out fine unevenness processing without any problems.
  • the etching proceeds isotropically to the lower side of the etching resistant film 2 and so-called side etching processing can be performed, an unnecessary flat portion does not remain below the etching resistant film 2.
  • the roughening can be easily and uniformly performed on the surface of the substrate 1a.
  • Etching defects on the surface of the substrate 1a in step 3 due to the retention of the abrasive grains 14 on the substrate 1a can be prevented, and fine roughening can be performed uniformly on the surface of the substrate 1a.
  • the substrate roughening method according to the third embodiment it is possible to uniformly and reliably perform fine surface roughening of the substrate surface while maintaining the quality of the substrate surface, and to achieve excellent reflection. It is possible to roughen the substrate that exhibits the suppression effect.
  • the method for roughening a substrate according to the present invention is useful when the surface of the substrate is uniformly roughened while maintaining the quality of the substrate surface.

Abstract

L’invention concerne un procédé de rugosification d’une surface de substrat, grâce auquel la surface d’un substrat peut être dégrossie de manière précise et uniforme tout en maintenant les qualités du substrat. Le procédé comprend une première étape qui consiste à former un film protecteur sur la surface du substrat ; une seconde étape qui consiste à former une ouverture sur le film protecteur en effectuant une projection de particules sur le film protecteur ; une troisième étape qui consiste à graver la surface du substrat sur laquelle est formé le film protecteur, dans des conditions dans lesquelles le film protecteur possède des caractéristiques de résistance, en utilisant, en guise de masque, le film protecteur sur lequel l’ouverture est formée ; et une quatrième étape qui consiste à retirer le film protecteur.
PCT/JP2009/055678 2008-04-17 2009-03-23 Procédé de rugosification de la surface d’un substrat et procédé de fabrication d’un dispositif photovoltaïque WO2009128324A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010508160A JPWO2009128324A1 (ja) 2008-04-17 2009-03-23 基板の粗面化方法、光起電力装置の製造方法
CN200980113397.2A CN102007582A (zh) 2008-04-17 2009-03-23 基板的面粗糙化方法、光电动势装置的制造方法
DE112009000924T DE112009000924T9 (de) 2008-04-17 2009-03-23 Oberflächenaufrauungsverfahren für ein Substrat und Herstellungsverfahren für eine Fotovoltaische Vorrichtung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008108272 2008-04-17
JP2008-108272 2008-04-17

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WO2009128324A1 true WO2009128324A1 (fr) 2009-10-22

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CN (1) CN102007582A (fr)
DE (1) DE112009000924T9 (fr)
WO (1) WO2009128324A1 (fr)

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JP2012204660A (ja) * 2011-03-25 2012-10-22 Mitsubishi Electric Corp 光起電力装置およびその製造方法、光起電力モジュール
CN103119379A (zh) * 2010-10-25 2013-05-22 揖斐电株式会社 集热接收器及太阳能热发电装置
JP2013105883A (ja) * 2011-11-14 2013-05-30 Sharp Corp 光電変換素子
JP2019029665A (ja) * 2017-07-27 2019-02-21 中美▲せき▼晶製品股▲ふん▼有限公司 太陽電池ウェーハ
JP2020053500A (ja) * 2018-09-26 2020-04-02 株式会社カネカ 太陽電池モジュールの製造方法及び太陽電池モジュール
JP2020205374A (ja) * 2019-06-18 2020-12-24 アルバック成膜株式会社 シリコンエッチング方法及びシリコン基板

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JP2011100872A (ja) * 2009-11-06 2011-05-19 Mitsubishi Electric Corp 基板表面処理装置、基板処理方法および光起電力装置の製造方法
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WO2011122353A1 (fr) * 2010-03-29 2011-10-06 三菱電機株式会社 Procédé permettant de rendre rugueux un substrat et procédé de fabrication d'un dispositif photovoltaïque
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JP5430751B2 (ja) * 2010-04-21 2014-03-05 三菱電機株式会社 低反射基板の製造方法、および光起電力装置の製造方法
CN103119379A (zh) * 2010-10-25 2013-05-22 揖斐电株式会社 集热接收器及太阳能热发电装置
JP2012204660A (ja) * 2011-03-25 2012-10-22 Mitsubishi Electric Corp 光起電力装置およびその製造方法、光起電力モジュール
JP2013105883A (ja) * 2011-11-14 2013-05-30 Sharp Corp 光電変換素子
JP2019029665A (ja) * 2017-07-27 2019-02-21 中美▲せき▼晶製品股▲ふん▼有限公司 太陽電池ウェーハ
JP2020053500A (ja) * 2018-09-26 2020-04-02 株式会社カネカ 太陽電池モジュールの製造方法及び太陽電池モジュール
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