WO2009128324A1 - Method for roughening substrate surface and method for manufacturing photovoltaic device - Google Patents
Method for roughening substrate surface and method for manufacturing photovoltaic device Download PDFInfo
- Publication number
- WO2009128324A1 WO2009128324A1 PCT/JP2009/055678 JP2009055678W WO2009128324A1 WO 2009128324 A1 WO2009128324 A1 WO 2009128324A1 JP 2009055678 W JP2009055678 W JP 2009055678W WO 2009128324 A1 WO2009128324 A1 WO 2009128324A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- etching
- roughening
- film
- resistant film
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 260
- 238000000034 method Methods 0.000 title claims abstract description 109
- 238000007788 roughening Methods 0.000 title claims abstract description 97
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 238000005530 etching Methods 0.000 claims abstract description 133
- 239000006061 abrasive grain Substances 0.000 claims description 57
- 238000005422 blasting Methods 0.000 claims description 36
- 230000001681 protective effect Effects 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 30
- 239000004065 semiconductor Substances 0.000 claims description 12
- 238000007664 blowing Methods 0.000 claims description 5
- 239000012535 impurity Substances 0.000 claims description 5
- 238000009792 diffusion process Methods 0.000 claims description 4
- 238000012545 processing Methods 0.000 abstract description 28
- 230000008569 process Effects 0.000 description 19
- 238000006243 chemical reaction Methods 0.000 description 16
- 238000010586 diagram Methods 0.000 description 16
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 13
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical group F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000010410 layer Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000001039 wet etching Methods 0.000 description 7
- 230000000694 effects Effects 0.000 description 6
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 238000000059 patterning Methods 0.000 description 6
- 230000001629 suppression Effects 0.000 description 6
- XWROUVVQGRRRMF-UHFFFAOYSA-N F.O[N+]([O-])=O Chemical compound F.O[N+]([O-])=O XWROUVVQGRRRMF-UHFFFAOYSA-N 0.000 description 5
- 239000007864 aqueous solution Substances 0.000 description 5
- 238000001312 dry etching Methods 0.000 description 5
- 238000003672 processing method Methods 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 229920005989 resin Polymers 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000014759 maintenance of location Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 230000035515 penetration Effects 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000009835 boiling Methods 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 239000011259 mixed solution Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 239000000243 solution Substances 0.000 description 3
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000012530 fluid Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910017604 nitric acid Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000002344 surface layer Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
Definitions
- the present invention relates to a substrate roughening method and a photovoltaic device manufacturing method.
- the reflectance at a wavelength of 628 nm is about 36% for silicon whose surface is mirror-polished, and about 15% when a (100) plane silicon single crystal substrate is wet etched, whereas polycrystalline silicon When the surface of the substrate is wet-etched, it is about 27 to 30%.
- a protective mask having an opening is formed by applying a resin to the surface of the polycrystalline silicon substrate, and the opening is passed through this opening.
- a method has been proposed in which grooves or recesses are formed in the substrate surface by performing air blasting on the substrate surface, and subsequently the protective mask is removed by performing air blasting (see, for example, Patent Document 1). ).
- the present invention has been made in view of the above, and a substrate roughening method and a photovoltaic device capable of uniformly finely roughening a substrate surface while maintaining the quality of the substrate surface It aims at obtaining the manufacturing method of this.
- FIG. 1 is a cross-sectional view showing a p-type polycrystalline silicon substrate having a surface roughened by the substrate roughening method according to the first embodiment of the present invention.
- FIGS. 2-1 is sectional drawing for demonstrating the process of the roughening method of the board
- FIGS. FIGS. 2-2 is sectional drawing for demonstrating the process of the roughening method of the board
- FIGS. FIG. 2-3 is a cross-sectional view for explaining a step of the substrate roughening method according to the first embodiment of the present invention.
- FIGS. 2-4 is sectional drawing for demonstrating the process of the roughening method of the board
- FIG. 3 is a diagram for explaining an example of a blasting apparatus used when a plurality of fine openings that are fine holes are opened in the etching resistant film in the method for roughening a substrate according to the first embodiment of the present invention. It is a schematic diagram.
- FIG. 4A is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
- FIG. 4B is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
- FIG. 4-3 is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
- FIG. 4A is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
- FIG. 4B is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching
- FIG. 4-4 is a schematic diagram for explaining the difference in the shape of the texture depression due to the difference in the processing method for the etching resistant film.
- FIG. 5-1 is a cross-sectional view showing a photovoltaic device manufactured using the substrate according to Embodiment 1 of the present invention.
- FIG. 5-2 is a top view of the photovoltaic device manufactured using the substrate according to Embodiment 1 of the present invention.
- FIG. 6A is a sectional view for explaining a step of the substrate roughening method according to the second embodiment of the present invention.
- FIG. 6B is a cross-sectional view for explaining the steps of the substrate roughening method according to the second embodiment of the present invention.
- FIG. 6-3 is a cross-sectional view for explaining a step of the substrate roughening method according to the second embodiment of the present invention.
- FIG. 6-4 is a cross-sectional view for explaining a step of the substrate roughening method according to the second embodiment of the present invention.
- FIGS. 6-5 is sectional drawing for demonstrating the process of the roughening method of the board
- FIG. 6-6 is a cross-sectional view for explaining a step in the substrate roughening method according to the second embodiment of the present invention.
- FIG. 7 is a diagram for explaining a blasting process of the substrate roughening method according to the first embodiment of the present invention, and is a diagram showing a positional relationship between the traveling direction of the blast abrasive grains and the substrate.
- FIG. 8 is a diagram for explaining the blasting process of the method for roughening a substrate according to the third embodiment of the present invention, and shows the positional relationship between the traveling direction of the blast abrasive grains and the substrate.
- FIG. 1 shows a substrate whose surface has been roughened by the method for roughening a substrate according to the present embodiment, and a p-type polycrystalline silicon substrate 1 which is a substrate for a solar cell as a photovoltaic device. It is sectional drawing which shows (henceforth the board
- texture recesses 4 having a substantially hemispherical shape with an average pitch between holes of approximately 10 ⁇ m are formed substantially uniformly on the substrate surface.
- the substrate roughening method according to the first embodiment includes a step 1 for forming a protective film on the surface of the substrate, a step 2 for forming an opening in the protective film by subjecting the protective film to blasting, and an opening A step 3 of etching the surface of the substrate on which the protective film is formed using the protective film on which the protective film is formed under a condition that the protective film is resistant, and a step 4 of removing the protective film.
- FIGS. 2-1 to 2-4 are cross-sectional views for explaining the steps of the substrate roughening method according to the first embodiment.
- the substrate roughening method according to the first embodiment will be described below with reference to these drawings.
- step 1 as shown in FIG. 2-1, a protective film is formed on the surface of one surface side of a p-type polycrystalline silicon substrate 1a (hereinafter referred to as substrate 1a) which is a target to be roughened. Then, a film 2 (hereinafter referred to as an etching resistant film) 2 having etching resistance against etching described later is formed.
- substrate 1a a p-type polycrystalline silicon substrate 1a
- etching resistant film 2 having etching resistance against etching described later is formed.
- the substrate 1a in the present embodiment is a polycrystalline silicon substrate that is most often used for consumer solar cells. After being sliced from a polycrystalline silicon ingot with a multi-wire saw, wet etching using an acid or alkali solution is performed. In this case, the damage when slicing is removed.
- the thickness of the substrate 1a after removing the damage is 200 ⁇ m and the dimension is 15 cm ⁇ .
- substrate 1a is not limited to this, It can change suitably.
- the etching resistant film 2 is an 80 nm thick silicon nitride film (hereinafter referred to as SiN film) formed by plasma CVD.
- SiN film silicon nitride film
- a SiN film is used as the etching resistant film 2
- an amorphous silicon film ( réelle-Si) is used as the etching resistant film 2.
- a like carbon film or the like may be used.
- the film thickness of the etching resistant film 2 is preferably 10 nm to 500 nm. If the film thickness of the etching resistant film 2 is 10 nm or more, the etching resistant film is slightly cut when etching is performed on one surface of the substrate 1a on which the etching resistant film 2 is formed in the subsequent step 3. Even if it is applied, it functions as an etching resistant film. Moreover, if the film thickness of the etching resistant film 2 is 500 nm or less, the fine hole processing can be reliably performed on the etching resistant film 2 in the subsequent step 2.
- step 2 as shown in FIG. 2-2, fine hole processing is performed on the etching resistant film 2. That is, a plurality of fine openings 3 are opened in the etching resistant film 2 by blast processing.
- alumina abrasive grains are used as abrasive grains for blasting.
- the present inventors have sought the most suitable abrasive for opening an opening in the SiN film that is the etching resistant film 2 without causing cracks in the substrate. As a result of repeated research, the alumina abrasive is most suitable. It came to the knowledge that there is.
- the abrasive grains for the blasting treatment are not limited to this, and other abrasive grains other than the alumina abrasive grains may be used as long as the fine openings 3 can be opened in the etching resistant film 2.
- FIG. 3 shows an apparatus (hereinafter referred to as a blasting apparatus) used for opening a plurality of fine openings 3 as fine holes in the etching resistant film 2 in the substrate roughening method according to the first embodiment. It is a schematic diagram for demonstrating an example.
- the blasting apparatus shown in FIG. 3 includes an abrasive spray nozzle 11, an abrasive tank 12, and a compressed air cylinder 13.
- the blast abrasive grains 14 supplied from the abrasive tank 12 are ejected from the abrasive grain injection nozzle 11 by the compressed air supplied from the compressed air cylinder 13, and the ejected blast abrasive grains 14 are processed.
- the surface is cut by colliding with the surface.
- the blasting abrasive grains 14 are moved in the in-plane direction of the substrate 1 in a state where the blasting abrasive grains 14 are ejected from the abrasive grain ejection nozzles 11, so that the blasting abrasive grains 14 are placed on the entire surface of the substrate. Can act on. Thereby, the fine opening 3 can be opened in the etching resistant film 2 by uniformly cutting the entire surface of the substrate.
- step 3 etching is performed on one surface of the substrate 1a on which the etching resistant film 2 is formed using the etching resistant film 2 that has been subjected to the fine hole processing as shown in FIG. A texture depression 4 is formed.
- etching for example, wet etching using a hydrofluoric acid nitric acid mixed solution is performed.
- the mixing ratio in preparing the hydrofluoric acid nitric acid mixture is hydrofluoric acid 1: nitric acid 20: water 10.
- the mixing ratio of the etching solution can be appropriately changed to an appropriate mixing ratio in view of the etching rate and the etching shape.
- dry etching such as plasma etching may be used for etching.
- the side etching part 5 is also generated on the lower side of the etching resistant film 2, and the flat part region on the surface of the substrate 1a can be reduced.
- the same shape can be obtained by dry etching, and etching isotropic conditions, that is, plasma etching, reactive ion etching, etching under relatively high gas pressure, or plasmaless
- gas etching or the like By using gas etching or the like, a substantially hemispherical texture recess 4a can be obtained.
- the textured dent 4 is formed by applying blasting instead of etching
- the textured dent 4c is formed only directly under the fine opening 3 of the etching resistant film 2 as shown in FIG. 4-4. .
- the substrate 1a is cut by using straight abrasive grains.
- the side etching under the etching resistant film 2 does not proceed. Accordingly, the flat portion of the surface of the substrate 1a remains in almost all the region covered with the etching resistant film 2, which becomes a factor that hinders the suppression of reflectance.
- step 2 determination of conditions for the blasting process in step 2 will be described. As blasting conditions, it is necessary to adjust the air pressure, the air flow rate, the nozzle-substrate distance, and the sweep speed. In the first embodiment, the diameter of the hole (fine opening 3) opened in the etching resistant film 2 was adjusted to 2 ⁇ m and the average pitch between holes was 10 ⁇ m.
- the aspect ratio of the textured depression 4 formed in step 3 that is, the ratio of the depth of the textured depression 4 to the entrance diameter of the textured depression 4 becomes small, and the reflectance It becomes a factor inhibiting inhibition.
- the pitch between the holes determines the pitch of the texture depressions 4 obtained by etching. If the pitch of the texture dents 4 is large, it takes a long time to eliminate the flat portion on the surface of the substrate 1, and the depth of the texture dents 4 also increases. This causes a disconnection during electrode formation when a photovoltaic device is manufactured using the substrate 1 later, and therefore it is necessary to set the pitch appropriately.
- step 4 the textured dent 4 is exposed by removing the etching resistant film 2.
- a hydrofluoric acid aqueous solution can be used to remove the etching resistant film 2.
- a texture structure having a fine pattern of about 10 ⁇ m, for example, can be formed on the surface of the substrate 1 as shown in FIG.
- FIGS. 5A and 5B are diagrams showing a photovoltaic device manufactured using the substrate 1 described above.
- FIG. 5A is a cross-sectional view of the photovoltaic device
- FIG. It is a top view of an electric power apparatus.
- the photovoltaic device shown in FIGS. 5A and 5B is a first conductive type semiconductor substrate having an N layer 21a which is an impurity diffusion layer in which a second conductive type impurity element is diffused in the substrate surface layer.
- a back electrode 24 formed on the surface (back surface) opposite to the light receiving surface of the semiconductor substrate 21.
- an N-type semiconductor substrate may include a P layer.
- the light receiving surface side electrode 23 includes a grid electrode 23a and a bus electrode 23b of the photovoltaic device, and FIG. 5A shows a cross-sectional view in a cross section perpendicular to the longitudinal direction of the grid electrode 23a.
- the semiconductor substrate 21 is a 15 cm square photovoltaic device using the substrate 1 having a textured structure formed on the surface of the substrate using the substrate roughening method described above.
- a paste mixed with silver is printed on the light-receiving surface of the substrate 1 in a comb shape by screen printing, and a paste mixed with aluminum is printed on the entire back surface of the substrate 1 by screen printing, and then a baking process is performed.
- the light receiving surface side electrode 23 and the back surface electrode 24 are formed. Firing is performed at 760 ° C. in an air atmosphere, for example.
- the photovoltaic device shown in FIGS. 5-1 and 5-2 is manufactured.
- a substrate obtained by etching a polycrystalline silicon substrate with an alkaline aqueous solution was produced. And the light reflection characteristic was evaluated with the spectrophotometer with respect to the board
- the short-circuit current density is significantly increased and the photoelectric conversion efficiency is improved as compared with the photovoltaic device of the comparative example.
- the suppression of the surface reflection loss of the substrate 1 is successfully achieved by configuring the photovoltaic device using the substrate 1 roughened by the method of roughening the substrate according to the first embodiment. It has been found that the short-circuit current density is greatly increased and contributes to the improvement of photoelectric conversion efficiency.
- the substrate roughening method according to the first embodiment since blasting is used for micro-hole processing of the etching resistant film 2, an expensive apparatus such as lithography and a redundant manufacturing process are required. Fine hole processing of the etching resistant film 2 can be realized without necessity, and fine roughening can be easily and uniformly performed on the surface of the substrate 1a.
- the etching resistant film 2 is formed with a small pitch of about 10 ⁇ m. It is possible to perform patterning by processing a fine hole. Thereby, the fine roughening can be uniformly performed on the surface of the substrate 1a.
- the substrate roughening method according to the first embodiment since wet or dry isotropic etching is used to roughen the substrate 1a, it is possible to carry out fine uneven processing without being restricted by the abrasive grain size. .
- the etching proceeds isotropically to the lower side of the etching resistant film 2 and so-called side etching processing can be performed, an unnecessary flat portion does not remain below the etching resistant film 2.
- the roughening can be easily and uniformly performed on the surface of the substrate 1a.
- the roughening method of the substrate according to the first embodiment it is possible to uniformly perform fine roughening of the substrate surface while maintaining the quality of the substrate surface, and an excellent antireflection effect.
- the substrate to be exhibited can be roughened.
- FIG. 6-1 to 6-6 are cross-sectional views for explaining the steps of the substrate roughening method according to the second embodiment.
- the substrate roughening method according to the second embodiment will be described below with reference to these drawings. Note that the same members as those in FIGS. 2-1 to 2-4 are omitted from the detailed description by omitting the same reference numerals.
- Step 1 is the same as step 1 of the substrate roughening method according to the first embodiment.
- an etching resistant film 2 is formed as a protective film on the surface of one surface of the substrate 1a. Form.
- a liquid film 31 is formed on the surface of the etching resistant film 2 as shown in FIG. 6-2.
- a material for the liquid film hexanol (boiling point 157 ° C.), which is a high boiling point material, was used.
- a two-fluid spray method is used, and for example, the coating conditions are adjusted so that the liquid thickness is about 5 ⁇ m over the entire surface of the etching resistant film 2.
- the blast abrasive grains have a plurality of sharp protrusions on the surface of the abrasive grains, and when the abrasive grains collide with the etching resistant film 2, these protrusions break through the etching resistant film 2, so that the etching resistant film A fine opening 3 is formed in 2.
- the protrusions enter a certain depth with respect to the substrate 1a under the etching resistant film 2, and the abrasive grains are detached from the etching resistant film 2. become unable.
- the liquid film 31 is formed on the etching resistant film 2 in order to suppress the entry of abrasive grains to the substrate 1a.
- the speed of the abrasive grains can be suppressed immediately before reaching the etching resistant film 2, and the abrasive grains are fine openings in the etching resistant film 2. 3 can be prevented.
- the liquid thickness of the liquid film 31 when an experiment was conducted by changing the liquid thickness of the liquid film 31, when the film thickness of the liquid film 31 was 1 ⁇ m or less, an effect of suppressing the speed of the abrasive grains was hardly obtained. It was. On the other hand, when the film thickness of the liquid film 31 is 10 ⁇ m or more, the abrasive particles that have entered the liquid film 31 cannot be detached from the liquid film 31. For these reasons, the liquid thickness is set to 5 ⁇ m in the second embodiment. However, since the optimal film thickness of the liquid film 31 varies depending on the viscosity, surface tension, and the like of the material of the liquid film 31, an optimal value may be set as appropriate.
- the material of the liquid film 31 hexanol, which is a high-boiling point material, is used so that the change in the liquid thickness due to evaporation is small between application and blasting, which is the next process, but other liquids can also be used.
- the liquid film 31 can be formed in consideration of a change in liquid thickness due to evaporation before blasting.
- the formation method of the liquid film 31 can be selected from methods such as an ink jet method, a spin coat method, a dip pulling method, a roll coat method, and an ultrasonic spray method in addition to the two-fluid spray method.
- step 2 as shown in FIG. 6-3, the liquid film 31 and the etching resistant film 2 are subjected to fine hole processing. That is, a plurality of fine openings 3 are opened in the liquid film 31 and the etching resistant film 2 by blast processing.
- step 2-2 the liquid film 31 is removed as shown in FIG. 6-4.
- the substrate 1a can be dried and removed by heating in a drying furnace at 170 ° C. for 10 minutes.
- Step 4 is the same as Step 4 of the substrate roughening method according to the first embodiment, and the texture dent 4 is exposed by removing the etching resistant film 2.
- a hydrofluoric acid aqueous solution can be used to remove the etching resistant film 2.
- a texture structure having a fine pattern of about 10 ⁇ m, for example, can be formed on the surface of the substrate 1.
- the blast processing is used for the micro-hole processing of the etching resistant film 2, so Fine hole processing of the etching resistant film 2 can be realized without requiring an expensive apparatus and a redundant manufacturing process, and fine roughening can be easily and uniformly performed on the surface of the substrate 1a. it can.
- a thick film process such as resin printing is not used for patterning the etching resistant film 2 as in the first embodiment, so that the thickness is about 10 ⁇ m. It is possible to pattern by patterning fine holes in the etching resistant film 2 with a small pitch. Thereby, the fine roughening can be uniformly performed on the surface of the substrate 1a.
- the substrate roughening method according to the second embodiment since wet or dry isotropic etching is used for roughening the substrate 1a as in the case of the first embodiment, it is limited by the abrasive grain size. It is possible to carry out fine unevenness processing without any problems.
- the etching proceeds isotropically to the lower side of the etching resistant film 2 and so-called side etching processing can be performed, an unnecessary flat portion does not remain below the etching resistant film 2.
- the roughening can be easily and uniformly performed on the surface of the substrate 1a.
- the roughening method of the substrate according to the second embodiment it is possible to uniformly and reliably perform fine roughening of the substrate surface while maintaining the quality of the substrate surface, and excellent reflection It is possible to roughen the substrate that exhibits the suppression effect.
- FIG. 7 is a diagram illustrating a blasting process in the process 2 described in the first embodiment, and is a diagram illustrating a positional relationship between the traveling direction D1 of the blast abrasive grains 14 and the substrate 1a.
- the blowing direction of the blast abrasive grains 14 enters substantially perpendicular to the surface of the substrate 1a.
- Direction direction (direction of the perpendicular 15 with respect to the substrate surface).
- the blast abrasive grains 14 have both a speed component in the direction of entering the etching resistant film 2 and a speed component in the direction of sliding on the surface of the substrate 1a.
- the detachment of the blast abrasive grains 14 is promoted, and the stay of the blast abrasive grains 14 in the fine openings 3 of the etching resistant film 2 can be prevented.
- the inventors obtained the most suitable penetration angle ⁇ that can prevent the blast abrasive grains 14 from staying in the fine openings 3 of the etching resistant film 2, and as a result of repeated experiments, the penetration angle ⁇ was 10 degrees. When the angle is less than 60 °, the retention prevention effect of the blast abrasive grains 14 is not exhibited at all. When the angle exceeds 60 degrees, the fine opening 3 cannot be formed in the etching resistant film 2.
- blast processing is used for micro-hole processing of the etching resistant film 2 as in the first embodiment.
- Fine hole processing of the etching resistant film 2 can be realized without requiring an expensive apparatus and a redundant manufacturing process, and fine roughening can be easily and uniformly performed on the surface of the substrate 1a. it can.
- the substrate roughening method according to the third embodiment as in the case of the first embodiment, a thick film process such as resin printing is not used for patterning of the etching resistant film 2, so that the thickness is about 10 ⁇ m. It is possible to pattern by patterning fine holes in the etching resistant film 2 with a small pitch. Thereby, the fine roughening can be uniformly performed on the surface of the substrate 1a.
- the substrate roughening method according to the third embodiment since wet or dry isotropic etching is used to roughen the substrate 1a as in the case of the first embodiment, it is limited by the abrasive grain size. It is possible to carry out fine unevenness processing without any problems.
- the etching proceeds isotropically to the lower side of the etching resistant film 2 and so-called side etching processing can be performed, an unnecessary flat portion does not remain below the etching resistant film 2.
- the roughening can be easily and uniformly performed on the surface of the substrate 1a.
- Etching defects on the surface of the substrate 1a in step 3 due to the retention of the abrasive grains 14 on the substrate 1a can be prevented, and fine roughening can be performed uniformly on the surface of the substrate 1a.
- the substrate roughening method according to the third embodiment it is possible to uniformly and reliably perform fine surface roughening of the substrate surface while maintaining the quality of the substrate surface, and to achieve excellent reflection. It is possible to roughen the substrate that exhibits the suppression effect.
- the method for roughening a substrate according to the present invention is useful when the surface of the substrate is uniformly roughened while maintaining the quality of the substrate surface.
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Development (AREA)
- Photovoltaic Devices (AREA)
- Weting (AREA)
Abstract
Description
1a p型多結晶シリコン基板
2 耐エッチング性膜
3 微細開口
4、4a、4b、4c テクスチャ窪み
5 サイドエッチング部
6 平坦部
11 砥粒噴射ノズル
12 砥粒タンク
13 圧縮空気ボンベ
14 ブラスト砥粒
15 垂線
21 半導体基板
21a N層
22 反射防止膜
23 受光面側電極
23a グリッド電極
23b バス電極
24 裏面電極
31 液体皮膜 DESCRIPTION OF SYMBOLS 1 P-type polycrystalline silicon substrate with which surface roughening was given 1a p-type
図1は、本実施の形態にかかる基板の粗面化方法により表面の粗面化が施された基板であり、光起電力装置である太陽電池用の基板であるp型多結晶シリコン基板1(以下、基板1と称する)を示す断面図である。この基板1には、穴間平均ピッチが略10μm程度の略半球状を呈するテクスチャ窪み4が基板表面に略均一に形成されている。
FIG. 1 shows a substrate whose surface has been roughened by the method for roughening a substrate according to the present embodiment, and a p-type
実施の形態2では、実施の形態1にかかる基板の粗面化方法および光起電力装置の製造方法の変形例について説明する。図6-1~図6-6は、実施の形態2にかかる基板の粗面化方法の工程を説明するための断面図である。以下、これらの図面を参照して実施の形態2にかかる基板の粗面化方法を説明する。なお、図2-1~図2-4の場合と同じ部材については、同じ符号を伏すことで詳細な説明は省略する。
In the second embodiment, a modification of the substrate roughening method and the photovoltaic device manufacturing method according to the first embodiment will be described. FIGS. 6-1 to 6-6 are cross-sectional views for explaining the steps of the substrate roughening method according to the second embodiment. The substrate roughening method according to the second embodiment will be described below with reference to these drawings. Note that the same members as those in FIGS. 2-1 to 2-4 are omitted from the detailed description by omitting the same reference numerals.
実施の形態3では、実施の形態1にかかる基板の粗面化方法および光起電力装置の製造方法の変形例について説明する。実施の形態3にかかる基板の粗面化方法は、実施の形態1にかかる基板の粗面化方法うち工程2のみが異なるため、以下では、実施の形態3にかかる基板の粗面化方法の工程2について説明する。
In the third embodiment, a modification of the substrate roughening method and the photovoltaic device manufacturing method according to the first embodiment will be described. Since the substrate roughening method according to the third embodiment is different from the substrate roughening method according to the first embodiment only in
Claims (5)
- 基板の表面に保護膜を形成する第1の工程と、
前記保護膜に対してブラスト加工処理を施して前記保護膜に開口を形成する第2の工程と、
前記開口が形成された前記保護膜をマスクとして、前記基板における前記保護膜が形成された面に対して、前記保護膜が耐性を有する条件でエッチングを施す第3の工程と、
前記保護膜を除去する第4の工程と、
を含むことを特徴とする基板の粗面化方法。 A first step of forming a protective film on the surface of the substrate;
A second step of subjecting the protective film to a blasting treatment to form an opening in the protective film;
A third step of etching the surface of the substrate on which the protective film is formed using the protective film in which the opening is formed as a mask, under a condition that the protective film has resistance;
A fourth step of removing the protective film;
A method for roughening a substrate, comprising: - 前記エッチングが、等方性エッチングであること、
を特徴とする請求項1に記載の基板の粗面化方法。 The etching is isotropic etching;
The method for roughening a substrate according to claim 1. - 前記第1の工程と前記第2の工程との間に、前記保護膜の表面に液体皮膜を形成する工程を含み、
前記第2の工程では、前記液体皮膜を介して前記ブラスト加工処理を施し、
前記第2の工程と前記第3の工程との間に、前記液体皮膜を除去する工程を含むこと、
を特徴とする請求項1に記載の基板の粗面化方法。 Including a step of forming a liquid film on the surface of the protective film between the first step and the second step;
In the second step, the blasting treatment is performed via the liquid film,
Including a step of removing the liquid film between the second step and the third step;
The method for roughening a substrate according to claim 1. - 前記第2の工程では、前記基板の表面に対する垂線と、前記ブラスト加工に用いるブラスト砥粒の吹きつけ方向と、の成す角を10度以上60度以下とすること、
を特徴とする請求項1に記載の基板の粗面化方法。 In the second step, an angle formed between a perpendicular to the surface of the substrate and a blowing direction of blast abrasive grains used for the blasting is set to 10 degrees or more and 60 degrees or less,
The method for roughening a substrate according to claim 1. - 請求項1~4のいずれか1つに記載の基板の粗面化方法により第1導電型の半導体基板の一面側を粗面化する粗面化工程と、
前記半導体基板の一面側に、第2導電型の不純物元素を拡散して不純物拡散層を形成する不純物拡散層形成工程と、
前記半導体基板の一面側における電極形成領域および前記半導体基板の他面側に電極を形成する電極形成工程と、
を含むことを特徴とする光起電力装置の製造方法。 A roughening step of roughening one surface side of the first conductivity type semiconductor substrate by the method of roughening a substrate according to any one of claims 1 to 4,
An impurity diffusion layer forming step of diffusing an impurity element of a second conductivity type to form an impurity diffusion layer on one surface side of the semiconductor substrate;
Forming an electrode on the other surface side of the semiconductor substrate and an electrode forming region on the one surface side of the semiconductor substrate; and
A method for manufacturing a photovoltaic device, comprising:
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN200980113397.2A CN102007582A (en) | 2008-04-17 | 2009-03-23 | Method for roughening substrate surface and method for manufacturing photovoltaic device |
JP2010508160A JPWO2009128324A1 (en) | 2008-04-17 | 2009-03-23 | Substrate roughening method and photovoltaic device manufacturing method |
DE112009000924T DE112009000924T9 (en) | 2008-04-17 | 2009-03-23 | A surface roughening method for a substrate and a method of manufacturing a photovoltaic device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008-108272 | 2008-04-17 | ||
JP2008108272 | 2008-04-17 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009128324A1 true WO2009128324A1 (en) | 2009-10-22 |
Family
ID=41199024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2009/055678 WO2009128324A1 (en) | 2008-04-17 | 2009-03-23 | Method for roughening substrate surface and method for manufacturing photovoltaic device |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPWO2009128324A1 (en) |
CN (1) | CN102007582A (en) |
DE (1) | DE112009000924T9 (en) |
WO (1) | WO2009128324A1 (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011100872A (en) * | 2009-11-06 | 2011-05-19 | Mitsubishi Electric Corp | Substrate surface processing apparatus, substrate processing method, and method of manufacturing photovoltaic device |
WO2011122353A1 (en) * | 2010-03-29 | 2011-10-06 | 三菱電機株式会社 | Method for roughening substrate and method for manufacturing photovoltaic device |
WO2011132340A1 (en) * | 2010-04-21 | 2011-10-27 | 三菱電機株式会社 | Method for producing low reflection substrate, method for manufacturing photovoltaic device, and photovoltaic device |
JP2012204660A (en) * | 2011-03-25 | 2012-10-22 | Mitsubishi Electric Corp | Photovoltaic device, manufacturing method thereof, and photovoltaic module |
CN103119379A (en) * | 2010-10-25 | 2013-05-22 | 揖斐电株式会社 | Thermal receiver and solar thermal power generation device |
JP2013105883A (en) * | 2011-11-14 | 2013-05-30 | Sharp Corp | Photoelectric conversion element |
JP2019029665A (en) * | 2017-07-27 | 2019-02-21 | 中美▲せき▼晶製品股▲ふん▼有限公司 | Solar cell wafer |
JP2020053500A (en) * | 2018-09-26 | 2020-04-02 | 株式会社カネカ | Manufacturing method of solar cell module and solar cell module |
JP2020205374A (en) * | 2019-06-18 | 2020-12-24 | アルバック成膜株式会社 | Silicon etching method and silicon substrate |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170141256A1 (en) | 2009-10-23 | 2017-05-18 | Alta Devices, Inc. | Multi-junction optoelectronic device with group iv semiconductor as a bottom junction |
US20150380576A1 (en) | 2010-10-13 | 2015-12-31 | Alta Devices, Inc. | Optoelectronic device with dielectric layer and method of manufacture |
US9502594B2 (en) | 2012-01-19 | 2016-11-22 | Alta Devices, Inc. | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from template layer and etching |
US11271128B2 (en) | 2009-10-23 | 2022-03-08 | Utica Leaseco, Llc | Multi-junction optoelectronic device |
US11038080B2 (en) | 2012-01-19 | 2021-06-15 | Utica Leaseco, Llc | Thin-film semiconductor optoelectronic device with textured front and/or back surface prepared from etching |
CN111485226A (en) * | 2012-07-27 | 2020-08-04 | 应用材料公司 | Roughened substrate support |
CN105336797B (en) * | 2014-08-05 | 2018-05-11 | 奥塔装置公司 | Thin film semiconductor's photoelectric device with veining front surface and/or back surface |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1168131A (en) * | 1997-08-25 | 1999-03-09 | Citizen Watch Co Ltd | Manufacture of solar battery |
JP2003309276A (en) * | 2002-04-16 | 2003-10-31 | Sharp Corp | Surface-working method for substrate and solar battery |
JP2004103736A (en) * | 2002-09-06 | 2004-04-02 | Ebara Corp | Method for manufacturing photovoltaic cell |
JP2006073832A (en) * | 2004-09-02 | 2006-03-16 | Sharp Corp | Solar battery and method of manufacturing the same |
JP2006203156A (en) * | 2004-12-21 | 2006-08-03 | Fuji Mach Mfg Co Ltd | Photovoltaic panel and method for fabricating same |
JP2007197665A (en) * | 2005-12-28 | 2007-08-09 | Seiko Epson Corp | Powder for grinding and grinding method |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002043601A (en) | 2000-07-25 | 2002-02-08 | Sharp Corp | Method for manufacturing solar battery |
-
2009
- 2009-03-23 CN CN200980113397.2A patent/CN102007582A/en active Pending
- 2009-03-23 DE DE112009000924T patent/DE112009000924T9/en not_active Withdrawn - After Issue
- 2009-03-23 WO PCT/JP2009/055678 patent/WO2009128324A1/en active Application Filing
- 2009-03-23 JP JP2010508160A patent/JPWO2009128324A1/en active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1168131A (en) * | 1997-08-25 | 1999-03-09 | Citizen Watch Co Ltd | Manufacture of solar battery |
JP2003309276A (en) * | 2002-04-16 | 2003-10-31 | Sharp Corp | Surface-working method for substrate and solar battery |
JP2004103736A (en) * | 2002-09-06 | 2004-04-02 | Ebara Corp | Method for manufacturing photovoltaic cell |
JP2006073832A (en) * | 2004-09-02 | 2006-03-16 | Sharp Corp | Solar battery and method of manufacturing the same |
JP2006203156A (en) * | 2004-12-21 | 2006-08-03 | Fuji Mach Mfg Co Ltd | Photovoltaic panel and method for fabricating same |
JP2007197665A (en) * | 2005-12-28 | 2007-08-09 | Seiko Epson Corp | Powder for grinding and grinding method |
Cited By (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011100872A (en) * | 2009-11-06 | 2011-05-19 | Mitsubishi Electric Corp | Substrate surface processing apparatus, substrate processing method, and method of manufacturing photovoltaic device |
JP5220237B2 (en) * | 2010-03-29 | 2013-06-26 | 三菱電機株式会社 | Substrate roughening method |
WO2011122353A1 (en) * | 2010-03-29 | 2011-10-06 | 三菱電機株式会社 | Method for roughening substrate and method for manufacturing photovoltaic device |
WO2011132340A1 (en) * | 2010-04-21 | 2011-10-27 | 三菱電機株式会社 | Method for producing low reflection substrate, method for manufacturing photovoltaic device, and photovoltaic device |
JP5430751B2 (en) * | 2010-04-21 | 2014-03-05 | 三菱電機株式会社 | Method for manufacturing low-reflection substrate and method for manufacturing photovoltaic device |
CN103119379A (en) * | 2010-10-25 | 2013-05-22 | 揖斐电株式会社 | Thermal receiver and solar thermal power generation device |
JP2012204660A (en) * | 2011-03-25 | 2012-10-22 | Mitsubishi Electric Corp | Photovoltaic device, manufacturing method thereof, and photovoltaic module |
JP2013105883A (en) * | 2011-11-14 | 2013-05-30 | Sharp Corp | Photoelectric conversion element |
JP2019029665A (en) * | 2017-07-27 | 2019-02-21 | 中美▲せき▼晶製品股▲ふん▼有限公司 | Solar cell wafer |
JP2020053500A (en) * | 2018-09-26 | 2020-04-02 | 株式会社カネカ | Manufacturing method of solar cell module and solar cell module |
JP7161900B2 (en) | 2018-09-26 | 2022-10-27 | 株式会社カネカ | Method for manufacturing solar cell module |
JP2020205374A (en) * | 2019-06-18 | 2020-12-24 | アルバック成膜株式会社 | Silicon etching method and silicon substrate |
JP7389571B2 (en) | 2019-06-18 | 2023-11-30 | アルバック成膜株式会社 | Silicon etching method and silicon substrate |
Also Published As
Publication number | Publication date |
---|---|
CN102007582A (en) | 2011-04-06 |
DE112009000924T5 (en) | 2011-03-03 |
DE112009000924T9 (en) | 2012-05-16 |
JPWO2009128324A1 (en) | 2011-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009128324A1 (en) | Method for roughening substrate surface and method for manufacturing photovoltaic device | |
Abdullah et al. | Research and development efforts on texturization to reduce the optical losses at front surface of silicon solar cell | |
EP2471109B1 (en) | Solar cell and method for manufacturing such a solar cell | |
US7128975B2 (en) | Multicrystalline silicon substrate and process for roughening surface thereof | |
US8642372B2 (en) | Solar cell and method for manufacturing the same | |
WO2010109692A1 (en) | Method for roughening substrate surface and method for manufacturing photovoltaic device | |
KR20130112877A (en) | Method for producing a solar cell having a textured front face and corresponding solar cell | |
WO2006117975A1 (en) | Solar cell manufacturing method and solar cell | |
EP2534698B1 (en) | Method for single side texturing | |
TWI385809B (en) | Surface texturization method | |
JP5677469B2 (en) | Method for manufacturing solar cell element, solar cell element, and solar cell module | |
Altinoluk et al. | Light trapping by micro and nano-hole texturing of single-crystalline silicon solar cells | |
KR101110304B1 (en) | Method for manufacturing of Solar cell using a Reactive ion etching | |
JP5220237B2 (en) | Substrate roughening method | |
JP2013058632A (en) | Method for manufacturing low reflectivity substrate and method for manufacturing photovoltaic device | |
CN108123009B (en) | Preparation method of black silicon battery by RIE texturing | |
JP5554359B2 (en) | Substrate roughening method, solar cell manufacturing method, solar cell, and solar cell module | |
JP5430751B2 (en) | Method for manufacturing low-reflection substrate and method for manufacturing photovoltaic device | |
WO2011145479A1 (en) | Method for roughening substrate, and method for manufacturing photovoltaic power apparatus | |
JPH11220146A (en) | Manufacture of solar cell | |
Willeke et al. | Mechanical wafer engineering for semitransparent polycrystalline silicon solar cells | |
JP2011192921A (en) | Method of manufacturing solar cell | |
JP5745598B2 (en) | Surface treatment method for solar cell substrate | |
JP2004134494A (en) | Method and system for producing solar cell | |
WO2012032743A1 (en) | Photoelectric conversion element and solar cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200980113397.2 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 09732582 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2010508160 Country of ref document: JP |
|
RET | De translation (de og part 6b) |
Ref document number: 112009000924 Country of ref document: DE Date of ref document: 20110303 Kind code of ref document: P |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 09732582 Country of ref document: EP Kind code of ref document: A1 |