WO2009101869A1 - Appareil d'application/développement et procédé d'application/développement - Google Patents

Appareil d'application/développement et procédé d'application/développement Download PDF

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Publication number
WO2009101869A1
WO2009101869A1 PCT/JP2009/051692 JP2009051692W WO2009101869A1 WO 2009101869 A1 WO2009101869 A1 WO 2009101869A1 JP 2009051692 W JP2009051692 W JP 2009051692W WO 2009101869 A1 WO2009101869 A1 WO 2009101869A1
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WIPO (PCT)
Prior art keywords
substrate
energy
coating
heating plate
exposure
Prior art date
Application number
PCT/JP2009/051692
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English (en)
Japanese (ja)
Inventor
Takanori Nishi
Takahiro Kitano
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Tokyo Electron Limited
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Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2009101869A1 publication Critical patent/WO2009101869A1/fr

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement

Definitions

  • a chemically amplified resist is applied, energy is supplied to the entire surface of the substrate exposed along the pattern, and the solubility of the region exposed along the pattern in the developer is changed.
  • the present invention relates to a coating / developing apparatus including a heating module having an energy supply unit, a coating and developing method, and a storage medium storing a program for executing the method.
  • a resist film is formed on the surface of a semiconductor wafer (hereinafter referred to as a wafer) to form a resist film, and the resist film is exposed in a predetermined pattern and then developed.
  • a resist pattern is formed.
  • Such a process is generally performed using a system in which an exposure apparatus is connected to a coating / developing apparatus for coating and developing a resist.
  • a chemically amplified resist containing an acid generator that generates an acid by supplying energy when exposed is used as a mainstream, a resist film is formed by the chemically amplified resist, and exposure is performed.
  • the processed wafer is subjected to a heat treatment called post-exposure bake (hereinafter abbreviated as PEB) before development processing.
  • PEB post-exposure bake
  • the acid generated by the exposure in this PEB treatment is thermally diffused, and a chemical amplification reaction (acid catalytic reaction) proceeds in the resist.
  • the exposed area is altered and the solubility in the developer is changed.
  • the exposure process in the exposure apparatus is a process of irradiating a predetermined area with the energy of a light pulse from a light source provided in the exposure apparatus, and sequentially moving the irradiation area to supply the resist along a predetermined pattern. is there.
  • the exposure process if the total amount of energy applied to the resist does not exceed the inherent range for the resist, a sufficient amount of acid to advance the acid-catalyzed reaction is not generated from the acid generator during PEB processing. For this reason, when the energy applied to the resist exceeds a specific range, the solubility of the exposed region in the developer changes rapidly. Therefore, in the exposure by the exposure apparatus, the exposure is continued until energy exceeding the inherent range is supplied to one irradiation area.
  • a light source of the exposure apparatus for example, there is one equipped with an ArF light source that outputs an ArF laser, and a liquid film that transmits light is formed on the resist film in order to form a fine pattern.
  • an ArF light source that outputs an ArF laser
  • a liquid film that transmits light is formed on the resist film in order to form a fine pattern.
  • a so-called immersion exposure process in which light from a light source such as the ArF light source is irradiated is performed.
  • an EUV light source that emits EUV (extreme ultraviolet) that outputs light having a wavelength lower than that of the ArF light source is used instead of immersion exposure using an ArF light source
  • EUV light source that emits EUV (extreme ultraviolet) that outputs light having a wavelength lower than that of the ArF light source is used instead of immersion exposure using an ArF light source
  • EUV has weaker energy than ArF laser or the like, and there is a limit to increasing the sensitivity of the resist. Therefore, when EUV is applied to an exposure apparatus, it takes a long time to expose one irradiation region. . As a result, the throughput of the exposure process is reduced.
  • Patent Document 1 Japanese Patent Laid-Open No. 3-142918 (hereinafter referred to as Patent Document 1), in order to form a pattern with a good shape for a thick resist film, first exposure is performed along a predetermined pattern, and then the entire wafer is exposed.
  • a method of changing the solubility in the developing solution by performing the second exposure to be exposed and setting the total amount of energy supplied thereto only to a certain value or more for only the region that has received the first exposure at the end of the second exposure. Is disclosed. Therefore, when performing exposure processing by EUV, it is conceivable to perform exposure in two steps as described in Patent Document 1.
  • the transport mechanism provided in the coating / developing apparatus controls the operation of transporting the resist-coated wafer to the exposure apparatus while returning the exposed wafer to the coating / developing apparatus.
  • each wafer is a module installed in the path to the exposure module and the heating module that performs PEB, and must wait until the transfer mechanism is ready for transfer.
  • the time to perform differs for each wafer.
  • An object of the present invention is to prevent the exposure time in the exposure apparatus from becoming long, and the solubility of the exposed area in the developer by the acid generated in the chemically amplified resist after the exposure processing is completed in the exposure apparatus.
  • a coating / developing apparatus and a coating / developing method that can suppress variations in the shape of a resist pattern formed for each substrate even if the time required for performing the heat treatment for changing the substrate varies from substrate to substrate. It is to provide.
  • Another object of the present invention is to provide a storage medium storing a program for executing such a coating / developing method.
  • a chemically amplified resist in which the energy exceeding the specific range is supplied and further heated, whereby the solubility in the developer in the region to which the energy is supplied changes.
  • a coating module for coating a substrate surface to form a resist film After the resist film is formed, a delivery mechanism that receives the substrate exposed along the pattern so that the amount of energy supplied to the resist film by the exposure apparatus does not exceed the inherent range, and delivers the substrate.
  • the substrate after the exposure is delivered by the delivery mechanism, and the amount of energy that does not exceed the intrinsic range over the entire resist film, and the total amount of energy supplied during the exposure is within the intrinsic range.
  • a heating module comprising: an energy supply unit for supplying energy exceeding; and a heating plate for heating the substrate to change the solubility; A developing module for developing a substrate heated by the heating module to form a pattern on the resist film; With The energy supply unit is configured to supply energy to a substrate in the middle of being carried into the heating plate, or a coating / developing apparatus configured to supply energy to a substrate placed on the heating plate.
  • the heating module includes a transport mechanism that transports the substrate received from the delivery mechanism to a heating plate, and the energy supply unit supplies energy to the substrate transported by the transport mechanism.
  • the transport mechanism may include a transport member having a mounting surface on which the substrate is placed, and the transport member controls the distance from the energy supply unit to the substrate.
  • You may have the adsorption
  • the suction mechanism includes an electrostatic chuck that electrostatically attracts the substrate, and the placement surface is constituted by the surface of the electrostatic chuck, or the placement surface by sucking the back surface of the substrate. What has a suction mechanism for making it adsorb
  • the transport member may be a cooling plate on which a substrate heated by a heating plate is placed and cools the substrate.
  • the energy supply unit is provided to face the heating plate in order to supply energy to the substrate placed on the heating plate, and the energy is supplied to the substrate placed on the heating plate.
  • the heating plate may have an adsorption mechanism that adsorbs the substrate to the mounting surface.
  • the adsorption mechanism includes an electrostatic chuck that electrostatically adsorbs the substrate, and the placement surface is configured by the surface of the electrostatic chuck, or the placement surface by sucking the back surface of the substrate. What has a suction mechanism for making it adsorb
  • the energy supply unit may have a light source for exposing the substrate.
  • the energy supply unit may have a charged particle supply source for generating a discharge on the substrate and supplying charged particles to the substrate.
  • the charged particle supply source is formed in a needle shape extending downward and may have an electrode for causing discharge on the substrate.
  • the heating plate may be provided in a processing container and may have a water vapor supply mechanism for supplying water vapor into the processing container.
  • a chemically amplified resist in which the energy exceeding the specific range is supplied and further heated, whereby the solubility in the developer in the region to which the energy is supplied changes.
  • Coating the substrate surface to form a resist film After the resist film is formed, passing the substrate exposed along the pattern to the heating module so that the amount of energy supplied to the resist film by an exposure device does not exceed the inherent range; The amount of energy that does not exceed the specific range on the entire resist film on the substrate being carried into the heating plate or on the substrate placed on the heating plate by the energy supply unit provided in the heating module The sum of the amount of energy supplied at the time of exposure supplies energy exceeding the specific range; Placing a substrate on a heating plate provided in the heating module; Heating the substrate with the heating plate to change the solubility; Developing a substrate heated by the heating module to form a pattern on the resist film; There is provided a coating / developing method comprising:
  • the apparatus further includes conveying the exposed substrate to a heating plate by a conveyance mechanism provided in the heating module, and supply of energy by the energy supply unit is conveyed by the conveyance mechanism. It can be performed on the substrate.
  • energy can be supplied by the energy supply unit after the substrate is placed on the heating plate provided in the heating module, and the substrate placed on the heating plate can be supplied with energy.
  • it can be performed when heating by the heating plate is performed.
  • a storage medium that operates on a computer and stores a program for controlling a coating / developing apparatus, and the program is A resist film is formed by applying to the substrate surface a chemically amplified resist that changes the solubility in the developer in the energy-supplied region when energy exceeding the specific range is supplied and further heated.
  • the total amount of energy supplied exceeds a specific range, and the resist is resisted on the substrate by a chemically amplified resist whose solubility in the developer in the region to which the energy has been supplied changes when heated.
  • a film is formed, and the resist film on the substrate is exposed along the pattern with an energy amount not exceeding the range in the exposure apparatus, and then the exposed substrate is conveyed to a heating module.
  • the energy supply unit provided in the heating module has an amount of energy that does not exceed the inherent range on the whole resist film of the substrate placed on the heating plate or on the heating plate. The sum of the amount of energy supplied at the time of exposure supplies energy exceeding the inherent range.
  • the amount of energy supplied to each exposure region can be suppressed, so that the time required for the pattern exposure can be suppressed and the amount of acid generated in the resist film by the pattern exposure can be reduced. Can be suppressed.
  • heating with the heating plate can be performed quickly, so after the exposure by the exposure apparatus until it is transported to the heating module Even if the time varies from one substrate to another, it is possible to prevent the acid distribution from varying, so that the resist pattern shape can be prevented from varying from one substrate to another.
  • 1 is a perspective view showing a coating / developing apparatus according to a first embodiment of the present invention.
  • 1 is a longitudinal side view showing a coating / developing apparatus according to a first embodiment of the present invention. It is a longitudinal cross-sectional view which shows the process of carrying out pattern exposure of the resist film formed with the said application
  • FIG. 1 It is a longitudinal cross-sectional view which shows the structure of the apparatus used by the evaluation test 2.
  • FIG. It is a longitudinal cross-sectional view which shows the structure of the apparatus used by the evaluation test 3.
  • FIG. It is a top view which shows the structure of the apparatus used by the evaluation test 3.
  • FIG. 1 is a longitudinal side view showing a heating module as a main part of a coating / developing apparatus according to a first embodiment of the present invention
  • FIG. 2 is a transverse plan view thereof.
  • the heating module 1 is provided in an air atmosphere in a coating / developing apparatus 8 (see FIGS. 5 and 6), which will be described later, and a resist film made of, for example, a chemically amplified positive resist (hereinafter simply referred to as a resist) is formed.
  • the wafer W exposed along a predetermined pattern is carried in by an exposure apparatus C4 (see FIG. 6) in which the resist film is connected to the coating / developing apparatus 8.
  • the heating module 1 includes a housing 11, and a transfer port 12 for the wafer W is opened on the side wall of the housing 11.
  • a partition plate 13 for partitioning the inside of the housing 11 up and down is provided in the housing 11.
  • the upper side of the partition plate 13 is configured as a carry-in area 19 for carrying the wafer W into the heating plate 41.
  • a horizontal cooling plate 2 is provided on the carrying port 12 side (front side) of the carry-in area 19.
  • the cooling plate 2 is provided with a cooling channel (not shown) for flowing temperature-controlled water, for example, on the back side thereof, and the wafer W mounted on the mounting surface 20 which is the surface of the cooling plate 2 is attached to the cooling plate 2. It is configured to cool.
  • the surface portion 21 of the cooling plate 2 is made of a dielectric, and an electrode 22 is provided in the surface portion 21.
  • the electrode 22 is connected to, for example, a power supply unit 23 that applies a high voltage, and application of a voltage from the power supply unit 23 to the electrode 22 is controlled by a control unit 80 described later.
  • the cooling plate 2 is configured as an electrostatic chuck, and the entire back surface of the wafer W placed on the front surface portion 21 is attracted to the cooling plate 2.
  • the cooling plate 2 also functions as a transport mechanism for transporting the mounted wafer W.
  • the cooling plate 2 is connected to the drive unit 25 via the support unit 24, so that the drive unit 25 can move horizontally in the housing 11 from the carry-in side (front side) to the back side. It is configured.
  • the drive unit 25 includes a speed regulator (not shown), for example, and can move the cooling plate 2 at an arbitrary speed in accordance with a control signal transmitted from the control unit 80.
  • symbol 18 shows the slit for the support part 24 to pass.
  • an elevating mechanism 15 and three elevating pins 14 raised and lowered by the elevating mechanism are provided, and the cooling plate 2 is on the carry-in side (front side).
  • the lifting pins 14 are moved up and down by the lifting mechanism 15, the lifting pins 14 project and sink with respect to the upper surface of the cooling plate 2 and enter the housing 11 through the transport port 12 ( The wafer W is transferred between the cooling plate 2 and the cooling plate 2 (not shown).
  • an energy supply unit 3 that extends so as to be orthogonal to the traveling direction of the cooling plate 2 is provided.
  • the energy supply unit 3 includes a base 31 and, for example, a rod-shaped light source 32 provided below the base 31, and the light source 32 is configured by, for example, a UV lamp, and radiates ultraviolet light downward in a band shape.
  • An output adjustment unit 33 that adjusts the output of the light source 32 is connected to the energy supply unit 3.
  • the output adjustment unit 33 controls the output of light from the light source 32 based on a control signal from the control unit 80.
  • a wafer W is placed, and a circular heating plate 41 that heats the placed wafer W is provided.
  • a heater 42 is provided inside the heating plate 41, and the heater 42 receives a control signal from the control unit 80, controls the temperature of the mounting surface 40 of the wafer W that is the surface of the heating plate 41, and mounts the heater 42.
  • the wafer W placed on the placement surface 40 is heated at an arbitrary temperature.
  • the heating plate 41 is supported by support members 41a and 41b.
  • a lifting mechanism 17 is provided below the heating plate 41, and the three lifting pins 16 are lifted and lowered by the lifting mechanism 17.
  • the elevating pins 16 are inserted into the heating plate 41, and are moved up and down by the elevating mechanism 17 so as to protrude from the upper surface of the heating plate 41 and move onto the heating plate 41 and the heating plate 41.
  • the wafer W is transferred between the two.
  • a ring-shaped exhaust part 43 is provided around the heating plate 41, and a plurality of exhaust ports 44 opened along the circumferential direction of the exhaust part 43 are provided on the surface of the exhaust part 43.
  • One end of an exhaust pipe 46 is connected to the exhaust part 43, and the other end of the exhaust pipe 46 is connected to an exhaust mechanism 47 constituted by a vacuum pump or the like.
  • the exhaust mechanism 47 exhausts air from the exhaust hole 44 through the exhaust pipe 46 and the exhaust passage 45 formed in the exhaust part 43.
  • the exhaust mechanism 47 has a pressure control mechanism (not shown), receives a control signal transmitted from the control unit 80, and controls the exhaust amount according to the control signal.
  • a circular lid 51 that can be moved up and down by a lifting mechanism 52 via a support member 51a is provided, and the peripheral edge of the lid 51 protrudes downward.
  • the lid 51 when the lid 51 is lowered, the peripheral edge thereof is in close contact with the peripheral edge of the exhaust part 43 via the ring-shaped contact member 48, and the periphery of the wafer W placed on the heating plate 41 is sealed. It is configured as a processing space S that is a space.
  • the exhaust container 43 and the lid body 51 constitute a processing container 50.
  • one end of a gas supply pipe 61 is connected to the center of the lid 51.
  • the lid 51 is provided with rectifying plates 54 and 55 horizontally so as to partition the space on the wafer W in the vertical direction, and the first vent chamber 56 and the rectifying plates 54 and 55 partitioned from each other.
  • a second ventilation chamber 57 is formed.
  • the rectifying plates 54 and 55 are provided with a large number of gas discharge ports 54a and 55a, respectively.
  • the gas supplied from the gas supply pipe 61 to the first vent chamber 56 is supplied to the gas discharge port 54a and the second vent chamber. 57, the gas discharge ports 55a are circulated in this order, supplied to the processing space S, and supplied to the entire surface of the wafer W.
  • a heating unit 58 including a heater for preventing dew condensation of water vapor is provided around the connection portion of the gas supply pipe 61 to the lid 51.
  • a tape heater 61a is installed outside the gas supply pipe 61 to prevent water vapor from condensing in the gas supply pipe 61.
  • this tape heater 61a for example, gas flowing through the gas supply pipe 65 is provided.
  • the gas supply pipe 61 is heated according to the temperature. Further, as shown in FIG. 1, the other end of the gas supply pipe 61 is opened to a gas phase portion of a container 62 in which pure water is stored, and the container 62 is a temperature sensor that detects the temperature of pure water therein. 63.
  • a mantle heater 64 as a heating mechanism is provided so as to surround the outer periphery of the container 62.
  • the mantle heater 64 includes a heater element 64a, a heat insulating material 64b surrounding the heater element 64a, and an exterior part 64c surrounding the heat insulating material 64b.
  • the temperature sensor 63 detects the water temperature in the container 62.
  • a corresponding signal is output to the control unit 80, and the control unit 80 outputs a control signal to the mantle heater 64 based on the output, so that the water temperature in the container 62 is controlled to the set temperature.
  • a nozzle 67 for bubbling is immersed in the liquid phase portion in the container 62, and the nozzle 67 is connected to a gas supply source 69 in which an inert gas such as N 2 gas is stored through a gas supply pipe 68.
  • the upstream side of the gas supply pipe 61 branches in the middle of the container 62 to form a branch pipe 65, and the upstream side of the branch pipe 65 is connected to the gas supply source 69.
  • the branch pipe 65 and the gas supply pipe 68 are provided with a gas supply device group 66 composed of valves, a mass flow controller, and the like, and the supply and disconnection of N 2 gas to these pipes is controlled.
  • a gas supply device group 66 composed of valves, a mass flow controller, and the like, and the supply and disconnection of N 2 gas to these pipes is controlled.
  • N 2 gas is discharged from the gas supply pipe 68 into the container 62 from the nozzle 67, it is bubbled while being heated by the mantle heater 64, and the N 2 gas is humidified and flows into the gas supply pipe 61. Further, the N 2 gas flowing into the gas supply pipe 61 through the branch pipe 65 is mixed with the N 2 gas humidified in the gas supply pipe 61 so that the acid catalyst reaction in the resist is promoted in the processing space S.
  • N 2 gas containing a predetermined amount of water vapor is supplied.
  • FIG. 5 is a plan view showing a first block B1 of the system in which the exposure apparatus C4 is connected to the coating / developing apparatus 8
  • FIG. 6 is a perspective view of the system
  • FIG. 7 is a longitudinal sectional view of the system. It is.
  • the coating / developing apparatus 8 includes a carrier block C1, a processing block C2, and an interface block C3.
  • the carrier block C1 has a mounting table 81 on which a sealed carrier C is mounted and a delivery arm 82.
  • the transfer arm 82 is configured to take out the wafer W from the sealed carrier C mounted on the mounting table 81, transfer it to the processing block C2, and receive the processed wafer W from the processing block C2 and return it to the carrier C. Has been.
  • the processing block C2 is a first block (DEV layer) B1 for performing development processing in this example, and a second processing for forming an antireflection film formed under the resist film.
  • Block (BCT layer) B2 a third block (COT layer) B3 for applying a resist film, and a fourth block (TCT) for forming an antireflection film formed on the resist film.
  • Layer) B4 and these are stacked in order from the bottom.
  • the second block (BCT layer) B2 includes a coating module for applying a chemical solution for forming an antireflection film formed in the lower layer of the resist film by spin coating, pre-processing of processing performed in the coating module, and A shelf unit that constitutes a heating / cooling system processing module group for performing post-processing, and a transfer arm A2 that is provided between the coating module and the processing module group and transfers the wafer W between them are provided. is doing.
  • the shelf units are arranged along the transfer region R1 in which the transfer arm A2 moves, and are configured by stacking the above heating and cooling modules.
  • the fourth block (TCT layer) B4 has the same configuration as the second block (BCT layer) B2 except that the chemical solution spin-coated by the coating module is a chemical solution that forms a protective film covering the resist film. It is.
  • the third block (COT layer) B3 has the same configuration as that of the second block (BCT layer) B2 except that the chemical solution spin-coated by the coating module is a resist solution.
  • the transfer arms for transferring the wafer W between the coating module and the processing module group in the third block (COT layer) B3 and the fourth block (TCT layer) B4 are indicated by reference numerals A3 and A4, respectively. Yes.
  • the second to fourth blocks B2 to B4 are configured in a layout similar to that of the first block B1 described later in plan view.
  • development modules 83 corresponding to the coating modules are provided in two layers, and pre-processing and post-processing of the development module 83 are performed. Shelf units U1 to U4 that constitute a processing module group of a heating / cooling system for performing processing are provided.
  • a two-stage development module 83 and a transfer arm A1 for transferring the wafer W to the processing module are provided. That is, the transport arm A1 is shared by the two-stage development module 83.
  • a part of the shelf units U1 to U4 in the DEV block B1 is constituted by the heating module 1 described above.
  • the processing block C2 is provided with a shelf unit U5 at a position where the transfer arm A can access.
  • the shelf unit U5 has a delivery stage TRS and a delivery stage CPL having a temperature control function so as to deliver the wafer W to and from the transfer arms A1 to A4 of the blocks B1 to B4.
  • a delivery stage BF capable of temporarily retaining a plurality of wafers.
  • a transport arm D1 that can be raised and lowered is provided in the vicinity of the shelf unit U5, and a stage provided in these shelf units U5 can be accessed.
  • the delivery arm 82 can also access a stage provided at a height corresponding to the BCT layer B2 and the DEV layer B1.
  • a shelf unit U6 is provided in a region adjacent to the interface block C3 in the transport region R1 at a position where the transport arm A1 and a shuttle arm 84 described later can access as shown in FIG.
  • the shelf unit U6 includes delivery stages TRS and CPL as with the shelf unit U5.
  • a shuttle arm 84 which is a dedicated transfer means for directly transferring the wafer W from the transfer stage CPL provided in the shelf unit U5 to the transfer stage CPL provided in the shelf unit U6, is provided. It has been.
  • the interface block C3 is provided with an interface arm 85 that constitutes a delivery mechanism that can deliver the wafer W between each stage of the shelf unit U6 and the exposure apparatus C4.
  • EUV extreme ultraviolet light
  • the coating / developing apparatus 8 includes a control unit 80 formed of, for example, a computer, and the control unit 80 includes a program, a memory, a CPU, and the like. In the program, a command (each step) is incorporated so that a control signal is sent from the control unit 80 to each part of the coating / developing apparatus 1 to advance the coating and developing processes described later.
  • This program is stored in a storage unit such as a computer storage medium such as a flexible disk, a compact disk, a hard disk, or an MO (magneto-optical disk) and installed in the control unit 80.
  • control unit 80 includes an input screen (not shown).
  • the operator of the apparatus can set the exposure amount at the energy supply unit 3 in the heating module 1 and the heating temperature at the heating plate 41 for each lot of wafers W.
  • the processing conditions such as can be set.
  • a control signal is transmitted to the output adjustment unit 33 and the drive unit 25 in accordance with the exposure amount set as described above, and light is emitted from the light source unit 32 with an output corresponding thereto, and the cooling plate 2 by the drive unit 25 is irradiated. , The wafer W on the cooling plate 2 is exposed with the set exposure amount.
  • FIGS. 8A to 8C are longitudinal side views showing how the resist film formed on the surface of the wafer W changes.
  • each region is indicated by dots or hatching according to the amount of energy supplied, and only the hatched region represents a cross section. is not.
  • the operator of the apparatus 8 sets in advance the heating temperature of each lot in the heating module 1 and the exposure amount of the energy supply unit 3 of that lot.
  • the exposure amount is set based on the properties of the resist to be applied and the exposure amount in the exposure apparatus C4.
  • the total amount of energy supplied is greater than 11 to 12 mJ / cm 2 , and when heated, the solubility in the developer in the region to which the energy has been supplied is abrupt.
  • a positive chemically amplified resist that increases in number is applied to the wafer W, and the exposure apparatus C4 performs exposure along a predetermined pattern as described later at, for example, 7 mJ / cm 2 .
  • the energy supplied by the energy supply unit 3, that is, the exposure amount (dose amount) is set to 7 mJ / cm 2 so that more energy than 12 mJ / cm 2 is supplied to the area exposed by the exposure apparatus C 4. Shall be.
  • the carrier C in which the wafer W is stored from the outside is placed on the placement unit 81, and the wafer W from the carrier C is delivered to the delivery stage CPL2 corresponding to the second block (BCT layer) B2. It is sequentially conveyed by the arm 82.
  • the transfer arm A2 in the second block (BCT layer) B2 receives the wafer W from the transfer stage CPL2 and sequentially transfers the wafer W to each module (antireflection film forming module and heating / cooling processing module group). An antireflection film is formed on the wafer W by the module.
  • the wafer W is carried into the third block (COT layer) B3 via the delivery stage BF2, the delivery arm D1, the delivery stage CPL3 of the shelf unit U5, and the transfer arm A3, and the COT layer B3 is applied. It is transported to the unit.
  • a positive chemically amplified resist is supplied to the wafer W to form a resist film.
  • the wafer W on which the resist film is formed is transferred to the transfer unit BF3 in the shelf unit U5 through the transfer arm A3 ⁇ the transfer stage BF3 of the shelf unit U5 ⁇ the transfer arm D1.
  • a protective film may be further formed on the wafer W on which the resist film is formed in the fourth block (TCT layer) B4.
  • the wafer W is transferred to the transfer arm A4 via the transfer stage CPL4, and after the protective film is formed, it is transferred to the transfer stage TRS4 by the transfer arm A4.
  • the wafer W on which a resist film or a protective film is further formed in some cases, is transferred from the transfer stages BF3 and TRS4 to the transfer stage CPL11 via the transfer arm D1, and from here the transfer stage CPL12 of the shelf unit U6 by the shuttle arm 84. Is directly transferred to the interface block C3.
  • the wafer W is transferred to the exposure apparatus C4 by the interface arm 85, where light emitted from a light source (not shown) passes through the exposure mask 92 having a predetermined opening 93 as indicated by an arrow.
  • the region 94 corresponding to the opening 93 in the resist film 91 is exposed.
  • the resist film 91 is exposed (pattern exposure) along a predetermined pattern while moving the mask 92 horizontally to sequentially move the exposure region (FIG. 8A).
  • the energy supplied to the pattern-exposed region 94 at this time is 7 mJ / cm 2. With this energy supply amount, almost no acid is generated in the exposed region, and as shown in FIG. Even if the development processing is continued, it is hardly dissolved in the developer.
  • the wafer W that has been subjected to the exposure processing by the exposure apparatus C4 is placed on the transfer stage TRS6 of the shelf unit U6 by the interface arm 85, and then transferred to the heating module 1 of the shelf unit U1 of the DEV layer B1 by the transfer arm A1.
  • the power supply unit 23 applies a voltage to the electrode 22 of the cooling plate 2 waiting on the transfer port 11 side (front side) of the heating module 1. Subsequently, when the elevating pins 14 are lowered, the entire wafer W is adsorbed onto the cooling plate 2.
  • the control unit 80 controls the light irradiation output of the light source 32 and the moving speed of the cooling plate 2 so as to irradiate the wafer W with a preset exposure amount (energy), and the preset exposure amount.
  • An energy of 7 mJ / cm 2 that is (energy) is supplied to the wafer W.
  • the sum of the energy supplied in the region 94 previously subjected to pattern exposure by the exposure apparatus C4 becomes 14 mJ / cm 2 , and the PEB process is performed later in the region 94.
  • Sufficient acid-catalyzed reaction (chemical amplification reaction) occurs, and a sufficient amount of acid is generated so that the entire region 94 becomes soluble during development processing.
  • the exposure amount of the region 95 that has not been exposed by the exposure apparatus C4 remains 7 mJ / cm 2 , the generation of acid is suppressed compared to the region 94, and the acid catalyst in the region 95 is treated during PEB processing. The reaction does not proceed and the region 95 is hardly dissolved during the development processing.
  • the cooling plate 2 holding the wafer W exposed by the energy supply unit 3 is positioned on the heating plate 41, the irradiation of light from the light source 32 stops, and the wafer W is received by the heating plate 41 via the lift pins 16.
  • the cooling plate 2 is returned to the transport port 12 side (front side) of the heating module 1.
  • the lid 51 is lowered to form a sealed processing space S.
  • N 2 gas containing water vapor is supplied to the entire surface of the wafer W, and this N 2 gas is sucked into the exhaust port 44 and exhausted in the circumferential direction of the wafer W.
  • the wafer W is heated by the heat of the heating plate 41, and the acid catalyst reaction proceeds in the pattern-exposed region 94 of the resist film 91 (FIG. 8B).
  • the gas supply to the wafer W is stopped, and the wafer W is cooled from the heating plate 41 by the operation opposite to the operation of loading into the processing container 50.
  • the wafer W transferred to the plate 2 and cooled by the cooling plate 2 is transferred to the developing module 83 via the transfer arm A1.
  • the wafer W is transferred to the transfer table TRS1 of the shelf unit U5 by the transfer arm A1, and then returned to the carrier C via the transfer arm 82.
  • An energy supply unit 3 that exposes the entire surface of W is provided.
  • the energy supply unit 3 performs exposure, a sufficient amount of acid is generated in the pattern-exposed region of the exposure apparatus C4, and PEB is generated.
  • the processing is performed, the solubility of the region in the developing solution is changed.
  • the solubility of the region where the pattern exposure is not performed by the exposure apparatus C4 is hardly changed when the PEB processing is performed.
  • the amount of energy supplied to each exposure amount area in the pattern exposure in the exposure apparatus C4 can be suppressed, the time required for the pattern exposure can be suppressed, and the amount of acid generated in the resist film by the pattern exposure. Can be suppressed. Then, after the amount of acid increases in the pattern-exposed region by the energy supply by the energy supply unit 3, the heating plate 41 can be quickly heated. As a result, even if the time until exposure to the heating module after exposure by the exposure apparatus C4 varies for each wafer W, the acid distribution is suppressed from varying, and the resist pattern shape varies for each wafer W. It can be suppressed.
  • the energy supply unit 3 performs exposure while the wafer W is being transferred to the heating plate 41 by the cooling plate 2, a decrease in throughput can be suppressed.
  • the inside of the heating module 1 is configured as an air atmosphere as in this example, for example, when the wafer W is warped or the wafer W is deformed and passes under the light source 32, the light source 32. If the distance between each part of the wafer W varies, the energy supplied to each part of the wafer W may vary due to energy attenuation by air. However, in the heating module 1, even when the warped wafer W is carried in, the entire wafer W is attracted to the cooling plate 2 and is held horizontally, so that the cooling plate 2 is moved to the heating plate 41. When moving, the distance between the light source 32 and each part of the wafer W below it is constant. Therefore, it is possible to suppress the supplied energy from varying in each part, and it is possible to more reliably suppress the variation in the resist pattern shape from wafer to wafer.
  • the heating module 1 supplies water vapor when the wafer W is heated, and activates an acid catalytic reaction (chemical amplification reaction) in the exposed region 94 of the resist film 91 when the wafer W is heated by the heating plate 41. Promotes diffusion. Therefore, even if less acid is generated in the exposed region 94 than when water vapor is not supplied, the region 94 can be made soluble in the developing solution. The energy supplied to can be further reduced. When the energy supplied by the exposure apparatus C4 is suppressed in this way, the exposure time in the exposure apparatus C4 can be shortened, and the time from the start of exposure to the end of exposure for one wafer W is shortened.
  • an acid catalytic reaction chemical amplification reaction
  • the cooling plate may be configured as a vacuum port as shown in FIGS. 10A and 10B, for example.
  • the cooling plate 101 in these drawings has a large number of openings 102 on the surface thereof, and the opening 102 is connected to one end of the exhaust pipe 104 via a flow path 103 in the cooling plate 101. The end is connected to the ejector 105 constituting the suction means.
  • the ejector 105 performs suction at a predetermined flow rate from the opening 102, and the wafer W is sucked onto the cooling plate 101.
  • the light source unit of the energy supply unit 3 is not limited to the light source unit that irradiates the wafer W with light in a band shape like the light source 32 described above.
  • the light source unit 106 shown in FIG. 11A is configured to irradiate light downward in the form of dots, and is attached to the base 31 via a drive unit 107.
  • the driving unit 107 repeatedly reciprocates one end and the other end of the base 31 at a speed corresponding to the moving speed of the cooling plate 2 and irradiates the entire wafer W conveyed onto the heating plate 41 as shown in FIG. 11B. It can be done.
  • the light source unit of the energy supply unit 3 is not limited to a unit that irradiates short-wavelength light such as ultraviolet light. If energy can be applied to the wafer W, a unit that irradiates an electron beam or an ion beam. A thing may be used. Further, as the exposure apparatus C4, in addition to the apparatus that performs exposure by EUV, a conventionally used apparatus that includes, for example, a KrF light source or an ArF light source may be used, or a liquid film may be formed on a wafer. You may use what performs immersion exposure which exposes via.
  • FIG. 12 shows a longitudinal side surface of the heating module 111. Parts that are configured similarly to the heating module 1 are denoted by the same reference numerals, and description thereof is omitted.
  • the cooling plate 112 in the heating module 111 is not configured as an electrostatic chuck, and the energy supply unit 3 is not provided in the loading area 19 where the wafer W is loaded into the heating plate 41.
  • the lid body 113 constituting the processing container 50 is configured in the same manner as the lid body 51, but a large number of needle electrodes 114 constituting the energy supply unit are directed downward on the rectifying plate 55 as shown in FIG. 13. It is formed to protrude.
  • a voltage is applied to the needle electrode 114 by the power supply unit 115 via the rectifying plate 55, and the needle electrode 114 to which the voltage is applied generates a corona discharge in the processing space S and is generated by the discharge. Charged particles in the plasma are supplied to the entire surface of the wafer W.
  • FIG. 14A shows the lower surface of the rectifying plate 55, and the needle electrodes 114 are arranged in a square lattice, for example.
  • the gas discharge port 54a is omitted in the drawing, it is formed between the needle electrode 114 and the needle electrode 114 so that the gas can be supplied uniformly to the wafer W.
  • the arrangement of the needle electrodes 114 is not limited to this example.
  • the needle electrodes 114 may be arranged in a three-way lattice pattern as shown in FIG. 14B.
  • the voltage applied to the needle electrode 114 is set.
  • h2 is about 5 mm to 9 mm
  • the voltage applied to the needle electrode 114 is ⁇ 2 kV to ⁇ 12 kV.
  • the power source constituting the power source unit 115 may be a DC power source or an AC power source.
  • the surface portion of the heating plate 41 is configured as an electrostatic chuck 121, and the wafer W is heated by the heater 42 via the electrostatic chuck 121.
  • the surface of the electrostatic chuck 121 is made of a dielectric 122 like the cooling plate 2, and an electrode 123 connected to the power supply unit 124 is embedded in the dielectric 122.
  • the mounting surface of the wafer W that forms the upper surface of the electrostatic chuck 121 is formed horizontally, and is configured to suck the entire back surface of the wafer W and to hold the entire wafer horizontally in the same manner as the cooling plate 2.
  • the amount of energy of charged particles supplied to the wafer W may be controlled by controlling the voltage applied to the wafer W from the electrostatic chuck 121. Further, the voltage applied to the wafer W in this way may be controlled by providing pins protruding on the electrostatic chuck 121 and slightly lifting the wafer W from the surface of the electrostatic chuck 121.
  • the operation of the heating module 111 will be described.
  • the wafer W exposed by the exposure apparatus C3 as described above is loaded into the heating module 111 and loaded into the processing container 50 via the cooling plate 112, a voltage is applied to the electrode 123 of the electrostatic chuck 121.
  • the entire wafer W that is applied and placed on the electrostatic chuck 121 via the lift pins 16 is attracted onto the electrostatic chuck 121, and the temperature of the wafer rises due to the heat of the heating plate 41.
  • the lid body 113 is lowered to form a sealed processing space S, and the distance between the needle electrode 114 and the surface of the wafer W is kept constant.
  • a voltage is applied to the needle electrode 114 by the power supply unit 115 to generate corona discharge, and charged particles in the plasma generated by the discharge are supplied to the entire surface of the wafer W. For example, when the energy of 7 mJ / cm 2 is supplied and the acid in the area exposed by the exposure apparatus C4 increases, the discharge is stopped. Since the wafer W is heated, the generated acid diffuses into the area exposed by the exposure apparatus C4, and a chemical amplification reaction occurs. After a predetermined time has elapsed since being placed on the heating plate 41, the wafer W is unloaded from the processing container 50 as in the first embodiment.
  • the energy supplied to the region along the pattern reaches a predetermined amount, and the acid is heated and diffused immediately after the acid is generated in the region.
  • the time from the generation of acid after the exposure until the PEB treatment is performed from varying for each wafer. Therefore, the resist pattern shape can be prevented from varying from wafer to wafer.
  • the treatment time can be reduced, and the treatment time is shortened in this way, and the sublimate generated by heating the resist. Can be prevented from adhering to the current plate 55 and the lid 51, and therefore, the adhered sublimated product can be prevented from falling on the wafer W as particles.
  • the timing of applying a voltage to the needle electrode 114 and the timing of stopping the application of the voltage are not limited to the above example, and may be performed according to the chemical amplification promoting effect to be obtained.
  • the charged particles may be supplied to the wafer W, the supply may be stopped, and then the temperature of the heating plate 41 may be raised to perform the PEB process.
  • FIGS. 15A and 15B As a modification of the second embodiment, as shown in FIGS. 15A and 15B, a large number of lines arranged in a straight line along the length direction of the support portion 125 below the rod-like support portion 125 in the lid 51.
  • the needle electrodes 114 may be moved horizontally via the support portion 125 so as to be orthogonal to the arrangement direction, and charged particles may be supplied to the entire wafer W. Further, as shown by an arrow in FIG. 16, the charged particles may be supplied to the entire wafer W by moving the support 126 provided below with one needle electrode 114 vertically and horizontally.
  • a light source that emits ultraviolet rays may be provided to perform exposure, and the entire wafer W may be exposed.
  • charged particles may be supplied by the needle electrode 114.
  • the needle electrode 114 is provided below the base 31 and passes below the needle electrode 114. Charged particles may be supplied to the wafer W.
  • the back surface of the wafer W is sucked to the mounting surface 120 of the heating plate 41 as shown in FIG. It may be configured as a vacuum port 127 configured similarly to the cooling plate 101 so that the wafer W is held horizontally.
  • reference numeral 128 denotes a large number of openings opened on the surface of the vacuum port 127, and the back surface of the wafer W is sucked from the openings 128 through the exhaust pipe 104.
  • water vapor may be supplied when the wafer W is heated.
  • Evaluation Test 1 A plurality of wafers W having a resist film formed on the surface thereof are prepared, and exposure is performed with different exposure amounts for each wafer along a predetermined pattern using the above-described exposure apparatus. Were exposed at different exposure amounts (dose amounts), and further developed after PEB. Then, by observing the change in solubility in the developing solution and changing the solubility in the developing solution in the area exposed along the pattern at a predetermined exposure amount, what is the minimum exposure amount required? I investigated.
  • the pattern exposure amount and the entire surface exposure amount were set on the vertical axis and the horizontal axis, respectively, and the results of the above test were plotted with square points.
  • the entire surface exposure amount is 0 mJ / cm 2
  • the entire surface exposure is not performed and the exposure is performed only by the exposure apparatus.
  • the necessary overall exposure amount is increased. In other words, when the overall exposure amount increases, the exposure amount along the pattern can be reduced. Therefore, it was shown that the exposure amount in the exposure apparatus can be suppressed and the throughput can be improved by using the process of performing the entire exposure after following the pattern as in the present invention.
  • the entire wafer W is exposed and then subjected to pattern exposure using an exposure apparatus, and the minimum value of the pattern exposure necessary for changing the solubility in the developer as in the evaluation test 1 is examined.
  • the results were plotted as round points. From the result of this reference test, it can be seen that the pattern exposure amount and the overall exposure amount necessary to change the solubility in the developer correlate with each other.
  • a wafer W coated with a negative type electron beam exposure resist was placed on a mounting table 41 provided in a sealed processing container 130 as shown in FIG. 20A.
  • a voltage was applied to the needle electrode 114 disposed at the center of the wafer W to supply charged particles to the wafer W, and then PEB treatment was performed.
  • the distance h3 between the heating plate 41 and the needle electrode 114 is 7.5 mm, and the distance h4 between the top plate of the processing container 130 and the heating plate 41 is 16.5 mm.
  • the voltage applied to the needle electrode 114 was set to +12 kV when processing a certain wafer and ⁇ 12 kV when processing another wafer.

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  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Selon l'invention, un substrat, qui a été exposé le long d'un motif par un dispositif d'exposition de telle manière que la quantité d'énergie devant être appliquée à un film de résist ne peut pas dépasser une plage intrinsèque au résist, est reçu à partir d'un mécanisme de transfert et transféré à un module de chauffage. Le module de chauffage applique au film de résist entier de l'énergie en une quantité ne dépassant pas la plage intrinsèque mais qui, additionnée à la quantité d'énergie appliquée au moment de l'exposition, dépasse la plage intrinsèque. Le substrat est chauffé par la plaque chauffante, ce qui permet ainsi de changer la solubilité.
PCT/JP2009/051692 2008-02-15 2009-02-02 Appareil d'application/développement et procédé d'application/développement WO2009101869A1 (fr)

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JP2011044664A (ja) * 2009-08-24 2011-03-03 Tokyo Electron Ltd 塗布現像装置及び塗布現像方法
JP2012023306A (ja) * 2010-07-16 2012-02-02 Tokyo Electron Ltd 塗布、現像装置、塗布、現像方法及び記憶媒体
JP2012028768A (ja) * 2010-07-19 2012-02-09 Asml Netherlands Bv 電気コネクタ、電気接続システム、およびリソグラフィ装置
JP2021040139A (ja) * 2015-06-08 2021-03-11 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ フィールドガイドによる埋設式露光、及び露光後ベークプロセス
US11815816B2 (en) 2021-02-15 2023-11-14 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
US11934103B2 (en) 2021-02-15 2024-03-19 Applied Materials, Inc. Apparatus for post exposure bake of photoresist

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US9236446B2 (en) 2014-03-13 2016-01-12 Taiwan Semiconductor Manufacturing Co., Ltd. Barc-assisted process for planar recessing or removing of variable-height layers
JP2016086042A (ja) * 2014-10-23 2016-05-19 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
CN107479339B (zh) 2017-09-01 2019-11-05 京东方科技集团股份有限公司 显影装置及其显影方法
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JP2011044664A (ja) * 2009-08-24 2011-03-03 Tokyo Electron Ltd 塗布現像装置及び塗布現像方法
US8342761B2 (en) 2009-08-24 2013-01-01 Tokyo Electron Limited Coating/developing apparatus and coating/developing method
JP2012023306A (ja) * 2010-07-16 2012-02-02 Tokyo Electron Ltd 塗布、現像装置、塗布、現像方法及び記憶媒体
JP2012028768A (ja) * 2010-07-19 2012-02-09 Asml Netherlands Bv 電気コネクタ、電気接続システム、およびリソグラフィ装置
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JP7094336B2 (ja) 2015-06-08 2022-07-01 アプライド マテリアルズ インコーポレイテッド フィールドガイドによる埋設式露光、及び露光後ベークプロセス
US11815816B2 (en) 2021-02-15 2023-11-14 Applied Materials, Inc. Apparatus for post exposure bake of photoresist
US11934103B2 (en) 2021-02-15 2024-03-19 Applied Materials, Inc. Apparatus for post exposure bake of photoresist

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