WO2009096401A1 - ポリアリーレンスルフィド樹脂組成物、その製造方法及び表面実装用電子部品 - Google Patents
ポリアリーレンスルフィド樹脂組成物、その製造方法及び表面実装用電子部品 Download PDFInfo
- Publication number
- WO2009096401A1 WO2009096401A1 PCT/JP2009/051306 JP2009051306W WO2009096401A1 WO 2009096401 A1 WO2009096401 A1 WO 2009096401A1 JP 2009051306 W JP2009051306 W JP 2009051306W WO 2009096401 A1 WO2009096401 A1 WO 2009096401A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- resin composition
- polyarylene sulfide
- sulfide resin
- polyamide
- composition according
- Prior art date
Links
- -1 Poly(arylene sulfide Chemical compound 0.000 title claims abstract description 80
- 239000011342 resin composition Substances 0.000 title claims abstract description 71
- 238000000034 method Methods 0.000 title claims abstract description 48
- 230000008569 process Effects 0.000 title claims abstract description 8
- 238000004519 manufacturing process Methods 0.000 title description 8
- 239000004952 Polyamide Substances 0.000 claims abstract description 39
- 229920002647 polyamide Polymers 0.000 claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 claims abstract description 18
- 239000002184 metal Substances 0.000 claims abstract description 18
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 14
- 239000011574 phosphorus Substances 0.000 claims abstract description 14
- 150000002903 organophosphorus compounds Chemical class 0.000 claims abstract description 12
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 claims description 69
- 229920000412 polyarylene Polymers 0.000 claims description 69
- 229920005989 resin Polymers 0.000 claims description 28
- 239000011347 resin Substances 0.000 claims description 28
- 239000004760 aramid Substances 0.000 claims description 26
- 229920003235 aromatic polyamide Polymers 0.000 claims description 25
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- 239000003963 antioxidant agent Substances 0.000 claims description 17
- 238000002156 mixing Methods 0.000 claims description 11
- 229910052801 chlorine Inorganic materials 0.000 claims description 10
- 125000001309 chloro group Chemical group Cl* 0.000 claims description 10
- 238000005259 measurement Methods 0.000 claims description 9
- OJMIONKXNSYLSR-UHFFFAOYSA-N phosphorous acid Chemical class OP(O)O OJMIONKXNSYLSR-UHFFFAOYSA-N 0.000 claims description 9
- JMHSCWJIDIKGNZ-UHFFFAOYSA-N 4-carbamoylbenzoic acid Chemical compound NC(=O)C1=CC=C(C(O)=O)C=C1 JMHSCWJIDIKGNZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000003078 antioxidant effect Effects 0.000 claims description 8
- 238000001953 recrystallisation Methods 0.000 claims description 8
- 239000012779 reinforcing material Substances 0.000 claims description 8
- BYEAHWXPCBROCE-UHFFFAOYSA-N 1,1,1,3,3,3-hexafluoropropan-2-ol Chemical compound FC(F)(F)C(O)C(F)(F)F BYEAHWXPCBROCE-UHFFFAOYSA-N 0.000 claims description 7
- 125000001931 aliphatic group Chemical group 0.000 claims description 7
- 229910001701 hydrotalcite Inorganic materials 0.000 claims description 7
- 229960001545 hydrotalcite Drugs 0.000 claims description 7
- 238000004898 kneading Methods 0.000 claims description 7
- 238000000605 extraction Methods 0.000 claims description 6
- 238000005227 gel permeation chromatography Methods 0.000 claims description 6
- 239000011256 inorganic filler Substances 0.000 claims description 6
- 229910003475 inorganic filler Inorganic materials 0.000 claims description 6
- 229920003189 Nylon 4,6 Polymers 0.000 claims description 5
- 125000002947 alkylene group Chemical group 0.000 claims description 5
- 238000013329 compounding Methods 0.000 claims description 5
- ACVYVLVWPXVTIT-UHFFFAOYSA-M phosphinate Chemical compound [O-][PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-M 0.000 claims description 5
- FVUKYCZRWSQGAS-UHFFFAOYSA-N 3-carbamoylbenzoic acid Chemical group NC(=O)C1=CC=CC(C(O)=O)=C1 FVUKYCZRWSQGAS-UHFFFAOYSA-N 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 4
- 229920006128 poly(nonamethylene terephthalamide) Polymers 0.000 claims description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims description 3
- 239000004593 Epoxy Substances 0.000 claims description 2
- 239000006087 Silane Coupling Agent Substances 0.000 claims description 2
- 238000000113 differential scanning calorimetry Methods 0.000 claims description 2
- 229920003171 Poly (ethylene oxide) Polymers 0.000 claims 1
- 238000003763 carbonization Methods 0.000 claims 1
- 150000003839 salts Chemical class 0.000 abstract description 12
- ACVYVLVWPXVTIT-UHFFFAOYSA-N phosphinic acid Chemical compound O[PH2]=O ACVYVLVWPXVTIT-UHFFFAOYSA-N 0.000 abstract description 4
- ISIJQEHRDSCQIU-UHFFFAOYSA-N tert-butyl 2,7-diazaspiro[4.5]decane-7-carboxylate Chemical class C1N(C(=O)OC(C)(C)C)CCCC11CNCC1 ISIJQEHRDSCQIU-UHFFFAOYSA-N 0.000 abstract description 2
- 230000006866 deterioration Effects 0.000 abstract 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 20
- 238000010438 heat treatment Methods 0.000 description 20
- 239000002253 acid Substances 0.000 description 18
- 239000007789 gas Substances 0.000 description 16
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 15
- 238000002844 melting Methods 0.000 description 14
- 230000008018 melting Effects 0.000 description 14
- 239000003381 stabilizer Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 12
- 230000000694 effects Effects 0.000 description 12
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 10
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 10
- 150000001875 compounds Chemical class 0.000 description 10
- 239000000835 fiber Substances 0.000 description 10
- 239000000463 material Substances 0.000 description 9
- 239000008188 pellet Substances 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 8
- 229910052783 alkali metal Inorganic materials 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 7
- 229910021645 metal ion Inorganic materials 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 229920000642 polymer Polymers 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 6
- WMFOQBRAJBCJND-UHFFFAOYSA-M Lithium hydroxide Chemical compound [Li+].[OH-] WMFOQBRAJBCJND-UHFFFAOYSA-M 0.000 description 6
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 6
- SMWDFEZZVXVKRB-UHFFFAOYSA-N Quinoline Chemical compound N1=CC=CC2=CC=CC=C21 SMWDFEZZVXVKRB-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 150000001412 amines Chemical class 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- 150000004985 diamines Chemical class 0.000 description 6
- 238000001746 injection moulding Methods 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 229910052717 sulfur Inorganic materials 0.000 description 6
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 5
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 5
- 239000007983 Tris buffer Substances 0.000 description 5
- 239000001361 adipic acid Substances 0.000 description 5
- 235000011037 adipic acid Nutrition 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 239000000155 melt Substances 0.000 description 5
- 238000005476 soldering Methods 0.000 description 5
- 239000000126 substance Substances 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 4
- DFPAKSUCGFBDDF-UHFFFAOYSA-N Nicotinamide Chemical group NC(=O)C1=CC=CN=C1 DFPAKSUCGFBDDF-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- XBDQKXXYIPTUBI-UHFFFAOYSA-M Propionate Chemical compound CCC([O-])=O XBDQKXXYIPTUBI-UHFFFAOYSA-M 0.000 description 4
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 125000003545 alkoxy group Chemical group 0.000 description 4
- 150000001408 amides Chemical class 0.000 description 4
- 239000007864 aqueous solution Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000000354 decomposition reaction Methods 0.000 description 4
- 239000003365 glass fiber Substances 0.000 description 4
- 150000004820 halides Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- 150000002989 phenols Chemical class 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 4
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 4
- HYHCSLBZRBJJCH-UHFFFAOYSA-M sodium hydrosulfide Chemical compound [Na+].[SH-] HYHCSLBZRBJJCH-UHFFFAOYSA-M 0.000 description 4
- 229910052979 sodium sulfide Inorganic materials 0.000 description 4
- GRVFOGOEDUUMBP-UHFFFAOYSA-N sodium sulfide (anhydrous) Chemical compound [Na+].[Na+].[S-2] GRVFOGOEDUUMBP-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 238000000527 sonication Methods 0.000 description 4
- 239000011593 sulfur Substances 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- GXURZKWLMYOCDX-UHFFFAOYSA-N 2,2-bis(hydroxymethyl)propane-1,3-diol;dihydroxyphosphanyl dihydrogen phosphite Chemical compound OP(O)OP(O)O.OCC(CO)(CO)CO GXURZKWLMYOCDX-UHFFFAOYSA-N 0.000 description 3
- RSJKGSCJYJTIGS-UHFFFAOYSA-N N-undecane Natural products CCCCCCCCCCC RSJKGSCJYJTIGS-UHFFFAOYSA-N 0.000 description 3
- FDBMBOYIVUGUSL-UHFFFAOYSA-N OP(O)OP(O)O.C(C)(C)(C)C1=C(C(=CC(=C1)C)C(C)(C)C)C(O)(C(CO)(CO)CO)C1=C(C=C(C=C1C(C)(C)C)C)C(C)(C)C Chemical compound OP(O)OP(O)O.C(C)(C)(C)C1=C(C(=CC(=C1)C)C(C)(C)C)C(O)(C(CO)(CO)CO)C1=C(C=C(C=C1C(C)(C)C)C)C(C)(C)C FDBMBOYIVUGUSL-UHFFFAOYSA-N 0.000 description 3
- QAEPIAHUOVJOOM-UHFFFAOYSA-N OP(O)OP(O)O.C(CCCCCCCC)C1=C(C=CC=C1)C(O)(C(CO)(CO)CO)C1=C(C=CC=C1)CCCCCCCCC Chemical compound OP(O)OP(O)O.C(CCCCCCCC)C1=C(C=CC=C1)C(O)(C(CO)(CO)CO)C1=C(C=CC=C1)CCCCCCCCC QAEPIAHUOVJOOM-UHFFFAOYSA-N 0.000 description 3
- 238000010306 acid treatment Methods 0.000 description 3
- 229910052977 alkali metal sulfide Inorganic materials 0.000 description 3
- 125000002877 alkyl aryl group Chemical group 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 150000001450 anions Chemical class 0.000 description 3
- 238000005452 bending Methods 0.000 description 3
- 239000011575 calcium Substances 0.000 description 3
- 230000005496 eutectics Effects 0.000 description 3
- 239000002657 fibrous material Substances 0.000 description 3
- 229920006015 heat resistant resin Polymers 0.000 description 3
- 239000012760 heat stabilizer Substances 0.000 description 3
- 230000001771 impaired effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- SXJVFQLYZSNZBT-UHFFFAOYSA-N nonane-1,9-diamine Chemical compound NCCCCCCCCCN SXJVFQLYZSNZBT-UHFFFAOYSA-N 0.000 description 3
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- CNALVHVMBXLLIY-IUCAKERBSA-N tert-butyl n-[(3s,5s)-5-methylpiperidin-3-yl]carbamate Chemical compound C[C@@H]1CNC[C@@H](NC(=O)OC(C)(C)C)C1 CNALVHVMBXLLIY-IUCAKERBSA-N 0.000 description 3
- 125000001973 tert-pentyl group Chemical group [H]C([H])([H])C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 3
- ZVVFVKJZNVSANF-UHFFFAOYSA-N 6-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]hexyl 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCCCCCCOC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 ZVVFVKJZNVSANF-UHFFFAOYSA-N 0.000 description 2
- ADRNSOYXKABLGT-UHFFFAOYSA-N 8-methylnonyl diphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OCCCCCCCC(C)C)OC1=CC=CC=C1 ADRNSOYXKABLGT-UHFFFAOYSA-N 0.000 description 2
- 229910052582 BN Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 2
- OKOBUGCCXMIKDM-UHFFFAOYSA-N Irganox 1098 Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)NCCCCCCNC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 OKOBUGCCXMIKDM-UHFFFAOYSA-N 0.000 description 2
- UQSXHKLRYXJYBZ-UHFFFAOYSA-N Iron oxide Chemical compound [Fe]=O UQSXHKLRYXJYBZ-UHFFFAOYSA-N 0.000 description 2
- RRHGJUQNOFWUDK-UHFFFAOYSA-N Isoprene Chemical compound CC(=C)C=C RRHGJUQNOFWUDK-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- XQVWYOYUZDUNRW-UHFFFAOYSA-N N-Phenyl-1-naphthylamine Chemical compound C=1C=CC2=CC=CC=C2C=1NC1=CC=CC=C1 XQVWYOYUZDUNRW-UHFFFAOYSA-N 0.000 description 2
- KEQFTVQCIQJIQW-UHFFFAOYSA-N N-Phenyl-2-naphthylamine Chemical compound C=1C=C2C=CC=CC2=CC=1NC1=CC=CC=C1 KEQFTVQCIQJIQW-UHFFFAOYSA-N 0.000 description 2
- JKIJEFPNVSHHEI-UHFFFAOYSA-N Phenol, 2,4-bis(1,1-dimethylethyl)-, phosphite (3:1) Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C JKIJEFPNVSHHEI-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000004734 Polyphenylene sulfide Substances 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- BGYHLZZASRKEJE-UHFFFAOYSA-N [3-[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxy]-2,2-bis[3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoyloxymethyl]propyl] 3-(3,5-ditert-butyl-4-hydroxyphenyl)propanoate Chemical compound CC(C)(C)C1=C(O)C(C(C)(C)C)=CC(CCC(=O)OCC(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)(COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)COC(=O)CCC=2C=C(C(O)=C(C=2)C(C)(C)C)C(C)(C)C)=C1 BGYHLZZASRKEJE-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000008044 alkali metal hydroxides Chemical class 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 125000003118 aryl group Chemical group 0.000 description 2
- 239000012298 atmosphere Substances 0.000 description 2
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 2
- 239000011324 bead Substances 0.000 description 2
- DMXDKAQPFYMMOZ-UHFFFAOYSA-N bis(2-tert-butylphenyl) phenyl phosphite Chemical compound CC(C)(C)C1=CC=CC=C1OP(OC=1C(=CC=CC=1)C(C)(C)C)OC1=CC=CC=C1 DMXDKAQPFYMMOZ-UHFFFAOYSA-N 0.000 description 2
- SXXILWLQSQDLDL-UHFFFAOYSA-N bis(8-methylnonyl) phenyl phosphite Chemical compound CC(C)CCCCCCCOP(OCCCCCCCC(C)C)OC1=CC=CC=C1 SXXILWLQSQDLDL-UHFFFAOYSA-N 0.000 description 2
- 229920001400 block copolymer Polymers 0.000 description 2
- 229910001382 calcium hypophosphite Inorganic materials 0.000 description 2
- 229940064002 calcium hypophosphite Drugs 0.000 description 2
- OSGAYBCDTDRGGQ-UHFFFAOYSA-L calcium sulfate Chemical compound [Ca+2].[O-]S([O-])(=O)=O OSGAYBCDTDRGGQ-UHFFFAOYSA-L 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000002485 combustion reaction Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- PWZFXELTLAQOKC-UHFFFAOYSA-A dialuminum;hexamagnesium;carbonate;hexadecahydroxide;tetrahydrate Chemical compound O.O.O.O.[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[OH-].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Mg+2].[Al+3].[Al+3].[O-]C([O-])=O PWZFXELTLAQOKC-UHFFFAOYSA-A 0.000 description 2
- 229940117389 dichlorobenzene Drugs 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- JBKVHLHDHHXQEQ-UHFFFAOYSA-N epsilon-caprolactam Chemical compound O=C1CCCCCN1 JBKVHLHDHHXQEQ-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 150000004677 hydrates Chemical class 0.000 description 2
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004255 ion exchange chromatography Methods 0.000 description 2
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 2
- HXQGSILMFTUKHI-UHFFFAOYSA-M lithium;sulfanide Chemical compound S[Li] HXQGSILMFTUKHI-UHFFFAOYSA-M 0.000 description 2
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 2
- 229920006111 poly(hexamethylene terephthalamide) Polymers 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 238000006068 polycondensation reaction Methods 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 230000000379 polymerizing effect Effects 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
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- UYCAUPASBSROMS-AWQJXPNKSA-M sodium;2,2,2-trifluoroacetate Chemical compound [Na+].[O-][13C](=O)[13C](F)(F)F UYCAUPASBSROMS-AWQJXPNKSA-M 0.000 description 1
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- DQZNLOXENNXVAD-UHFFFAOYSA-N trimethoxy-[2-(7-oxabicyclo[4.1.0]heptan-4-yl)ethyl]silane Chemical compound C1C(CC[Si](OC)(OC)OC)CCC2OC21 DQZNLOXENNXVAD-UHFFFAOYSA-N 0.000 description 1
- XZZNDPSIHUTMOC-UHFFFAOYSA-N triphenyl phosphate Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)(=O)OC1=CC=CC=C1 XZZNDPSIHUTMOC-UHFFFAOYSA-N 0.000 description 1
- HVLLSGMXQDNUAL-UHFFFAOYSA-N triphenyl phosphite Chemical compound C=1C=CC=CC=1OP(OC=1C=CC=CC=1)OC1=CC=CC=C1 HVLLSGMXQDNUAL-UHFFFAOYSA-N 0.000 description 1
- AZSKHRTUXHLAHS-UHFFFAOYSA-N tris(2,4-di-tert-butylphenyl) phosphate Chemical compound CC(C)(C)C1=CC(C(C)(C)C)=CC=C1OP(=O)(OC=1C(=CC(=CC=1)C(C)(C)C)C(C)(C)C)OC1=CC=C(C(C)(C)C)C=C1C(C)(C)C AZSKHRTUXHLAHS-UHFFFAOYSA-N 0.000 description 1
- QEDNBHNWMHJNAB-UHFFFAOYSA-N tris(8-methylnonyl) phosphite Chemical compound CC(C)CCCCCCCOP(OCCCCCCCC(C)C)OCCCCCCCC(C)C QEDNBHNWMHJNAB-UHFFFAOYSA-N 0.000 description 1
- LDZXOZYBYWMGIT-UHFFFAOYSA-N tris[2-(2-methylbutan-2-yl)phenyl] phosphite Chemical compound CCC(C)(C)C1=CC=CC=C1OP(OC=1C(=CC=CC=1)C(C)(C)CC)OC1=CC=CC=C1C(C)(C)CC LDZXOZYBYWMGIT-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/32—Phosphorus-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
- C08K5/51—Phosphorus bound to oxygen
- C08K5/53—Phosphorus bound to oxygen bound to oxygen and to carbon only
- C08K5/5393—Phosphonous compounds, e.g. R—P(OR')2
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/02—Polythioethers; Polythioether-ethers
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L81/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing sulfur with or without nitrogen, oxygen or carbon only; Compositions of polysulfones; Compositions of derivatives of such polymers
- C08L81/04—Polysulfides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/49—Phosphorus-containing compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L77/00—Compositions of polyamides obtained by reactions forming a carboxylic amide link in the main chain; Compositions of derivatives of such polymers
- C08L77/06—Polyamides derived from polyamines and polycarboxylic acids
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
Definitions
- the present invention relates to a polyarylene sulfide resin composition containing polyarylene sulfide and aromatic polyamide, a method for producing the same, and an electronic component for surface mounting.
- Polyarylene sulfide typified by polyphenylene sulfide has a high melting point, excellent flame retardancy and chemical resistance, and good fluidity during molding. Widely used in machine parts and automobile parts.
- the mounting method of resin-based electronic components on a printed circuit board is a so-called surface mount method (hereinafter abbreviated as “SMT method”). It has shifted to the surface mounting method called.
- SMT method surface mount method
- tin-lead eutectic solder melting point: 184 ° C.
- tin has been used as an alternative material due to environmental pollution problems.
- lead-free solder in which several kinds of metals are added to the base is used.
- Such a lead-free solder has a melting point higher than that of tin-lead eutectic solder.
- the melting point reaches 220 ° C.
- resin compositions obtained by melt-kneading polyarylene sulfide and polyamide as a highly heat-resistant resin material are known (see, for example, Patent Document 1 and Patent Document 2).
- the resin composition in which the polyarylene sulfide resin and the polyamide are mixed has an action of decomposing the polyarylene sulfide, so that the decomposition gas is increased during melt kneading, and the electronic component that has passed through the heating furnace (reflow furnace).
- the mechanical properties such as bending strength after passing through the reflow furnace are reduced.
- JP-A-2-123159 Japanese Patent Laid-Open No. 5-5060
- An object of the present invention is to provide a polyarylene sulfide resin composition having both flammability, a method for producing the same, and an electronic component for surface mounting.
- the inventor of the present invention uses an aromatic phosphite compound or an aromatic phosphonite compound (C) in a resin composition containing a polyarylene sulfide resin and a resin composition mixed with polyamide.
- C aromatic phosphite compound
- D metal hypophosphite salt
- the present invention relates to polyarylene sulfide (A), polyamide (B), aromatic phosphite compound or aromatic phosphonite compound (C), and phosphite metal salt or hypophosphite metal salt (D).
- the present invention relates to a polyarylene sulfide resin composition characterized by being an essential component.
- the polyarylene sulfide resin composition is charged into a twin-screw kneading extruder, and the ratio of the resin component discharge amount (kg / hr) to the screw rotation speed (rpm) (discharge amount / screw rotation speed). ) Is 0.02 to 0.2 (kg / hr ⁇ rpm).
- the present invention relates to an electronic component for surface mounting characterized by comprising a molded product of the polyarylene sulfide resin composition and a metal terminal as essential components.
- the present invention has excellent heat resistance, and even when subjected to heat treatment under a high temperature condition through a reflow furnace, the mechanical strength such as bending strength is not lowered, and further has excellent flame retardancy.
- a polyarylene sulfide resin composition, a method for producing the same, and an electronic component for surface mounting can be provided.
- the polyarylene sulfide resin composition of the present invention expresses excellent heat resistance in a high temperature range, and when used in a surface mounting electronic component, it may be exposed to a high temperature during soldering to a substrate. It has a feature that the mechanical strength change and appearance change of the electronic component are very small after the soldering process. Therefore, the polyarylene sulfide resin composition of the present invention is particularly useful for connectors, switches, relays, coil bobbins, capacitors, etc. used for soldering onto a printed circuit board in the SMT system.
- the polyarylene sulfide (hereinafter abbreviated as “PAS”) (A) used in the present invention has a resin structure having a repeating unit of a structure in which an aromatic ring and a sulfur atom are bonded. Specifically, The following structural formula (1)
- R 5 and R 6 each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, a nitro group, an amino group, a phenyl group, a methoxy group, or an ethoxy group.
- R 5 and R 6 in the formula are preferably hydrogen atoms from the viewpoint of the mechanical strength of the PAS (A).
- those bonded at the para position represented by the following structural formula (2) and those bonded at the meta position represented by the following structural formula (3) are exemplified.
- the bonding of the sulfur atom to the aromatic ring in the repeating unit is a structure bonded at the para-position represented by the structural formula (2). In terms of surface.
- the PAS (A) includes not only the structural moiety represented by the structural formula (1) but also the structural moiety represented by the following structural formulas (4) to (7). And 30 mol% or less of the total with the structural site represented by In particular, in the present invention, the structural portion represented by the structural formulas (4) to (7) is preferably 10 mol% or less from the viewpoint of the heat resistance and mechanical strength of PAS (A).
- the bonding mode thereof may be either a random copolymer or a block copolymer. Good.
- the PAS (A) has the following structural formula (8) in its molecular structure.
- Such PAS (A) can be produced, for example, by the following (1) to (4).
- (1) A method of reacting sodium sulfide and p-dichlorobenzene in an amide solvent such as N-methylpyrrolidone or dimethylacetamide or a sulfone solvent such as sulfolane.
- (2) A method of polymerizing p-dichlorobenzene in the presence of sulfur and sodium carbonate
- (3) A method of polymerizing in the presence of sodium sulfide or sodium hydrosulfide and sodium hydroxide or hydrogen sulfide and sodium hydroxide in a polar solvent, (4) Method by self-condensation of p-chlorothiophenol
- the method of (1) reacting sodium sulfide and p-dichlorobenzene in an amide solvent such as N-methylpyrrolidone or dimethylacetamide or a sulfone solvent such as sulfolane is easy to control the reaction. From the viewpoint of excellent productivity.
- linear and high molecular weight PAS (A) can be produced industrially efficiently.
- solid alkali metal sulfide, dichlorobenzene, alkali metal hydrosulfide, organic Particularly preferred is a method in which a reaction slurry containing an acid alkali metal salt as an essential component is prepared and heated to carry out polymerization in a heterogeneous system.
- the polymerization method is preferably a method in which the following steps 1 and 2 are essential production steps from the viewpoint of productivity.
- Step 1 Hydrous alkali metal sulfide, or Hydrous alkali metal hydrosulfide and alkali metal hydroxide; N-methylpyrrolidone, A non-hydrolyzable organic solvent
- Process step 2 producing slurry (I) by reacting while dehydrating: Next, in the slurry (I), Dichlorobenzene, The alkali metal hydrosulfide; An alkali metal salt of the hydrolyzate of N-methylpyrrolidone, Process for polymerization by reaction
- Examples of the hydrated alkali metal sulfide used herein include liquid or solid hydrates of compounds such as lithium sulfide, sodium sulfide, potassium sulfide, rubidium sulfide, cesium sulfide, and the solid content concentration thereof is 10 to 80% by mass. In particular, the content is preferably 35 to 65% by mass.
- hydrous alkali metal hydrosulfide examples include liquid or solid hydrates of compounds such as lithium hydrosulfide, sodium hydrosulfide, potassium hydrosulfide, rubidium hydrosulfide, and cesium hydrosulfide.
- the partial concentration is preferably 10 to 80% by mass.
- hydrated lithium hydrosulfide and hydrated sodium hydrosulfide are preferable, and hydrated sodium hydrosulfide is particularly preferable.
- examples of the alkali metal hydroxide include lithium hydroxide, sodium hydroxide, potassium hydroxide, rubidium hydroxide, cesium hydroxide, and aqueous solutions thereof.
- this aqueous solution it is preferable that it is aqueous solution with a density
- lithium hydroxide, sodium hydroxide, and potassium hydroxide are particularly preferable, and sodium hydroxide is particularly preferable.
- the molecular weight ranges from 25,000 to 30,000, particularly in the measurement using gel permeation chromatography, and the weight average molecular weight (Mw)
- the ratio of the number average molecular weight (Mn) (Mw / Mn) is in the range of 5 to 10 and the non-Newton index is in the range of 0.9 to 1.3. It is preferable because the chlorine atom content of PAS (A) itself can be reduced to the range of 1,500 to 2,000 ppm without lowering, and application to halogen-free electronic / electrical parts is easy.
- the peak molecular weight and molecular weight distribution (Mw / Mn) of the PAS (A) can be measured using gel permeation chromatography and using 6 types of monodisperse polystyrene for calibration under the following conditions. .
- the PAS (A) preferably has a melt viscosity of 40 to 60 Pa ⁇ S, more preferably 45 to 55 Pa ⁇ S by a flow tester, from the viewpoint of compatibility with the polyamide (B).
- the value of the melt viscosity is a value measured using a Koka flow tester at 300 ° C., a shear rate of 100 sec ⁇ 1 , a nozzle hole diameter of 0.5 mm, and a length of 1.0 mm.
- the PAS (A) described in detail above further reduces moisture content by reducing the amount of residual metal ions, and further reduces the residual amount of low molecular weight impurities by-produced during polymerization. Is preferably treated with an acid and then washed with water.
- acetic acid acetic acid, hydrochloric acid, sulfuric acid, phosphoric acid, silicic acid, carbonic acid, and propyl acid are preferable because PAS (A) can be efficiently decomposed and the amount of residual metal ions can be reduced efficiently.
- Hydrochloric acid is preferred.
- Examples of the acid treatment method include a method of immersing PAS in an acid or an acid aqueous solution. At this time, further stirring or heating may be performed as necessary.
- an aqueous acetic acid solution having a pH of 4 is heated to 80 to 90 ° C., and PAS (A) is immersed therein, and 20 to 40 The method of stirring for a minute is mentioned.
- the acid-treated PAS (A) is then washed several times with water or warm water in order to physically remove the remaining acid or salt.
- the water used at this time is preferably distilled water or deionized water.
- the PAS (A) to be subjected to the acid treatment is preferably a granular material, and specifically, it may be a granular material such as a pellet or a slurry state material after polymerization.
- the polyamide (B) used in the present invention is polyamide 6 which is an ⁇ -caprolactam polymer, polyamide 11 which is an undecane lactam polymer, polyamide 12 which is a lauryl lactam polymer, tetramethylenediamine / adipic acid cocondensation
- the polyamide 46 include aliphatic polyamides such as polyamide 46, hexamethylene diamine / adipic acid co-condensate, polyamide 610 which is hexamethylene diamine / sebacic acid co-condensate, and aromatic polyamides.
- the aromatic polyamide described in detail below has good compatibility with PAS (A), and the heat resistance of the molded product is good, especially the heat resistance after reflow in surface mount electronic component applications Is preferable from the point that becomes favorable.
- aromatic polyamide used here is specifically the following structural formula a
- R represents an alkylene group having 2 to 12 carbon atoms.
- a terephthalic acid amide structure is formed by the reaction of terephthalic acid or terephthalic acid dihalide with an aliphatic diamine having 2 to 12 carbon atoms.
- aliphatic diamine having 2 to 12 carbon atoms examples include ethylenediamine, propanediamine, 1,4-butanediamine, 1,6-hexanediamine, 1,7-heptanediamine, 1,8- Linear aliphatic alkylenediamines such as octanediamine, 1,9-nonanediamine, 1,10-decanediamine, 1,11-undecanediamine, 1,12-dodecanediamine; 1-butyl-1,2-ethanediamine, 1,1-dimethyl-1,4-butanediamine, 1-ethyl-1,4-butanediamine, 1,2-dimethyl-1,4-butanediamine, 1,3-dimethyl-1,4-butanediamine, 1,4-dimethyl-1,4-butanediamine, 2,3-dimethyl-1,4-butanediamine, 2-methyl-1,5-pentanediamine, 3- Til-1,5-pentanediamine, 2,5-dimethyl-1,6
- linear aliphatic alkylene diamines having 4 to 8 carbon atoms and branched aliphatic alkylene diamines having 5 to 10 carbon atoms are particularly preferred from the viewpoint of moisture resistance and mechanical strength.
- preferred aromatic polyamides include polyamide 6T obtained by a polycondensation reaction using terephthalic acid as the main component of dicarboxylic acid and 1,6-hexanediamine as the main component of diamine, and dicarboxylic acid containing terephthalic acid as the main component.
- Polyamide 6T obtained from an acid component, a diamine component mainly composed of 1,6-hexanediamine, a dicarboxylic acid component mainly composed of terephthalic acid, 1,9-nonanediamine and 2-methyl-1,8 -Polyamide 9T obtained from a diamine component mainly composed of octanediamine.
- the aromatic polyamide has the following structural formula b
- the aromatic polyamide has the following structural formula c
- R has the same meaning as R in the structural formula a, and R 2 represents an aliphatic hydrocarbon group having 4 to 10 carbon atoms). Good.
- the acid amide structure represented by the structural formula c includes an aliphatic dicarboxylic acid having 4 to 10 carbon atoms, an acid esterified product thereof, an acid anhydride thereof, or an acid halide thereof, and 2 to 12 carbon atoms. It is formed by reaction with an aliphatic diamine.
- aliphatic dicarboxylic acid having 4 to 10 carbon atoms include malonic acid, dimethylmalonic acid, succinic acid, glutaric acid, adipic acid, 2-methyladipic acid, trimethyladipic acid, pimelic acid, Aliphatic dicarboxylic acids such as 2,2-dimethylglutaric acid, 3,3-diethylsuccinic acid, azelaic acid, sebacic acid and suberic acid; fats such as 1,3-cyclopentanedicarboxylic acid and 1,4-cyclohexanedicarboxylic acid Aliphatic dicarboxylic acids such as cyclic dicarboxylic acids.
- the acid esterified product of the aliphatic dicarboxylic acid having 4 to 10 carbon atoms include methyl ester, ethyl ester, t-butyl ester and the like.
- the halogen atom constituting the acid halide include a bromine atom and a chlorine atom.
- the aromatic polyamide preferably has an amide structure represented by the structural formula a, structural formula b, or structural formula c as a structural site, and is composed of one dicarboxylic acid molecule and one diamine molecule.
- the acid amide structure is 1 unit
- the terephthalic acid amide structure is 65 mol% or more
- the isophthalic acid amide structure is 20 mol% or more with respect to the total acid amide structure constituting the aromatic polyamide (B).
- the aliphatic hydrocarbon acid amide structure is contained in an amount of 10 mol% or more from the viewpoint that the effect of improving the heat resistance becomes remarkable.
- the aromatic polyamide has a terephthalic acid amide structure represented by the structural formula a of 65 to 70 mol% from the balance between heat resistance and moisture resistance. 20-25 mol% of isophthalic acid amide structure represented by the structural formula b, 10-15 mol% of the acid amide structure represented by the structural formula c, Polyamide composed of
- the aromatic polyamide preferably has a melting point of 290 to 330 ° C. and a glass transition temperature (Tg) of 90 to 140 ° C. from the viewpoint of dispersibility in the PAS (A).
- Tg glass transition temperature
- the molecular weight of the polyamide component used in the present invention preferably has a peak molecular weight in the range of 30,000 to 70,000 as measured by gel permeation chromatography, and in particular, 40,000 to 60,000. It is preferable to have a peak molecular weight in the range. When the molecular weight of the polyamide component is within this range, the releasability when the polyarylene sulfide resin composition of the present invention is used for injection molding is particularly good.
- the gel permeation chromatography conditions for measuring the molecular weight of the polyamide in the present invention are as follows: Hexafluoroisopropanol containing 5 mM sodium trifluoroacetate is used as an eluent, and the molecular weight is determined by polymethyl methacrylate having a known molecular weight. A calibration curve can be prepared and obtained as a polymethylmethacrylate equivalent molecular weight.
- the above-mentioned aromatic polyamide can be produced, for example, by the following methods (1) to (3).
- An acid halide of a dicarboxylic acid component containing terephthalic acid and a diamine component containing an aliphatic diamine having 2 to 12 carbon atoms are dissolved in two kinds of solvents that are not compatible with each other, and then an alkali and a catalytic amount
- An interfacial polymerization method in which two liquids are mixed and stirred in the presence of a quaternary ammonium salt to conduct a polycondensation reaction.
- the blending ratio of PAS (A) and polyamide (B) is such that the mass ratio (A) / (B) of PAS (A) / polyamide (B) is 95/5 to A ratio in the range of 50/50 is preferable from the viewpoint of good heat resistance and low water absorption of the molded product, and a range of 90/10 to 65/35 is more preferable in terms of heat resistance and moisture resistance. In addition, it is preferable from the viewpoint of good flame retardancy.
- the polyarylene sulfide resin composition of the present invention includes an organic phosphorus compound (C) selected from the group consisting of an aromatic phosphite compound and an aromatic phosphonite compound, in addition to the above-described PAS (A) and polyamide (B),
- organic phosphorus compound (C) selected from the group consisting of an aromatic phosphite compound and an aromatic phosphonite compound
- PAS aromatic phosphite compound
- B polyamide
- aromatic phosphite compound constituting the organic phosphorus compound (C) trisnonylphenyl phosphite, diphenylisodecyl phosphite, phenyl diisodecyl phosphite, 2,2-methylenebis (4,6-di-t -Butylphenyl) octyl phosphite, 4,4′-butylidenebis (3-methyl-6-tert-butylphenyl) ditridecyl phosphite, tris (2,4-di-tert-butylphenyl) phosphite, tris (2 -T-butyl-4-methylphenyl) phosphite, tris (2,4-di-t-amylphenyl) phosphite, tris (2-t-butylphenyl) phosphite, tris [2- (1,1- Dimethylpropyl
- organic phosphorus compounds (C) described in detail above those having a molecular weight of 600 or more are preferable because they have low decomposition and volatility during melt processing and a large effect of reducing the amount of gas generated from the polyarylene sulfide resin composition.
- an aromatic phosphite compound is preferable from the viewpoint that the effect of reducing the amount of generated gas is remarkable, and bis (C 3 -C 9 alkylaryl) pentaerythritol diphosphite is particularly preferable.
- the blending ratio of the organic phosphorus compound (C) is 0.1 to 1 with respect to 100 parts by mass in total of PAS (A), polyamide (B), organic phosphorus compound (C), and inorganic phosphorus compound (D). It is preferable that the amount is in the range of parts by mass because the effect of suppressing gas generation during melting becomes remarkable and the amount of decomposition of the organophosphorus compound (C) itself is reduced.
- the phosphorous acid metal salt and hypophosphorous acid metal salt constituting the inorganic phosphorus compound (D) are each alkali metal (Group I) salt, each alkaline earth metal (Group II) salt, each III to V Group salts and salts of the respective transition metals.
- hypophosphite is particularly preferable in terms of the effect of reducing generated gas at the time of melting.
- sodium hypophosphite, calcium hypophosphite, aluminum hypophosphite, hypophosphorous acid. Zinc etc. are mentioned.
- the blending ratio of the inorganic phosphorus compound (D) is 0.1 to 1 with respect to 100 parts by mass in total of PAS (A), polyamide (B), organic phosphorus compound (C), and inorganic phosphorus compound (D). Part by weight is preferable because the effect of suppressing gas generation at the time of melting becomes remarkable, and the change in fluidity at the time of melting is reduced.
- the dispersibility of the aromatic polyamide is dramatically improved, and the effect of improving the heat resistance and flame retardancy becomes more remarkable. preferable.
- the epoxy alkoxysilane compound (E) is a silane compound having one or more epoxy groups and two or more alkoxy groups in one molecule.
- the alkoxy group includes an alkoxy group having 1 to 6 carbon atoms, or a polyalkyleneoxy group composed of 2 to 6 units having the alkoxy group as a repeating unit.
- specific examples of the epoxyalkoxysilane compound (E) include ⁇ -glycidoxypropyltrimethoxysilane, ⁇ - (3,4-epoxycyclohexyl) ethyltrimethoxysilane, ⁇ -glycidoxypropyltriethoxysilane. Etc.
- the compounding amount of the epoxyalkoxysilane compound (E) is preferably 0.01 to 5 parts by mass, particularly 0.1 parts by mass with respect to 100 parts by mass of the total amount of the PAS (A) and the aromatic polyamide. It is preferably ⁇ 2 parts by mass.
- the hydrotalcite compound (F) may be used in combination with the above-described components at the time of melt-kneading the PAS (A) and the aromatic polyamide or Suppresses thermal decomposition of polymer components during heat treatment in the reflow oven of molded products, further improves mechanical strength and flame retardancy, and improves the appearance of molded products after heat treatment. It is preferable from the point which becomes a thing.
- the hydrotalcite compound (F) used here has a layered crystal structure of a divalent metal ion and a trivalent metal ion hydroxide, and has a structure containing an anion between the layers of the layered crystal structure. It is an inorganic compound or a fired product thereof.
- the divalent metal ions constituting the hydrotalcite compound (D) include Mg 2+ , Mn 2+ , Fe 2+ , Co 2+ , Ni 2+ , Cu 2+ , and Zn 2+.
- the ions include Al 3+ , Fe 3+ , Cr 3+ , Co 3+ , and In 3+ .
- the anions include OH ⁇ , F ⁇ , Cl ⁇ , Br ⁇ , NO 3 ⁇ , CO 3 ⁇ , SO 4 2 ⁇ , Fe (CN) 6 3 ⁇ and CH 3 COO ⁇ , molybdate, polymolybtenene. Acid ions, vanadate ions, and polyvanadate ions may be mentioned.
- the trivalent metal ion is Al 3+ and the anion is CO 3 because it has excellent ion exchange ability with the acid component caused by PAS (A) and has a remarkable gas generation prevention effect.
- 3 ⁇ is preferable.
- M 2+ represents a divalent metal ion selected from the group consisting of Mg, Ca and Zn
- x and m are numerical values satisfying 0 ⁇ x ⁇ 0.5 and 0 ⁇ m ⁇ 2. .
- the compound satisfying the formula 1 is, for example, Mg 2+ 6 Al 2 (OH) 16 ⁇ (CO 3) ⁇ 4H 2 O
- Mg 0.7 Al 0.3 (OH) 2 (CO 3 ) 0.15 ⁇ 0.54H 2 O Mg 4.5 Al 2 (OH) 13 CO 3 ⁇ 3.5H 2 O
- Mg 4.3 Al 2 (OH) 12.6 CO 3 ⁇ 3.5H 2 O Mg 4.2 Al 2 (OH) 12.4 CO 3
- Zn 6 Al 2 (OH) 16 CO 3 .4H 2 O examples thereof include Ca 6 Al 2 (OH) 16 CO 3 .4H 2 O.
- the blending amount of the hydrotalcite compound (F) is 0.1 to 1.0% by mass in the polyarylene sulfide resin composition of the present invention from the viewpoint that the effect of preventing gas generation is remarkable, or the PAS
- the amount is preferably 0.01 to 5 parts by weight, more preferably 0.1 to 2 parts by weight, based on 100 parts by weight of the total weight of (A) and the aromatic polyamide.
- a fibrous reinforcing material (G-1) or an inorganic filler (G-2) is further blended in addition to the above components.
- Examples of the fibrous reinforcing material (G-1) include glass fiber, PAN-based or pitch-based carbon fiber, silica fiber, silica-alumina fiber, zirconia fiber, boron nitride fiber, silicon nitride fiber, boron fiber, boric acid.
- Examples thereof include aluminum fibers, potassium titanate fibers, inorganic fibrous materials such as stainless steel, aluminum, titanium, copper, brass and other metallic fibrous materials, and organic fibrous materials such as aramid fibers.
- Examples of the inorganic filler (G-2) include silicates such as mica, talc, wollastonite, sericite, kaolin, clay, bentonite, asbestos, alumina silicate, zeolite, pyrophyllite, calcium carbonate, magnesium carbonate, Carbonate such as dolomite, sulfate such as calcium sulfate and barium sulfate, metal oxide such as alumina, magnesium oxide, silica, zirconia, titania and iron oxide, glass beads, ceramic beads, boron nitride, silicon carbide, calcium phosphate, etc. Is mentioned.
- These fibrous reinforcing materials (G-1) and inorganic fillers (G-2) may be used alone or in combination of two or more.
- the compounding amount of the fibrous reinforcing material (G-1) or inorganic filler (G-2) used in the present invention is from 1 to 100 parts by mass with respect to 100 parts by mass of the total amount of PAS (A) and aromatic polyamide (B).
- the range is preferably 200 parts by weight.
- the fibrous reinforcing material (G-1) or the inorganic filler (G-2) is a surface treatment such as a silane coupling agent or a titanium coupling agent as long as the performance of the polyarylene sulfide resin molded article of the present invention is not impaired. What surface-treated with the agent may be used.
- the PAS (A) and the polyamide (B) may be used in combination with an antioxidant or a stabilizer (H) as long as the effects of the present invention are not impaired. Suppresses the thermal decomposition of the polymer component during melt kneading or heat treatment in the reflow furnace of the molded product, and further improves the excellent mechanical strength and flame retardancy, and the appearance of the molded product after the heat treatment This is preferable because the improvement effect becomes more remarkable.
- Antioxidants or stabilizers include, for example, phenolic (such as hindered phenols), amine (such as hindered amines), phosphorus, sulfur, hydroquinone, and quinoline antioxidants (or stabilizers). included.
- antioxidants or stabilizers include, for example, phenolic (such as hindered phenols), amine (such as hindered amines), phosphorus, sulfur, hydroquinone, and quinoline antioxidants (or stabilizers). included.
- Phenol antioxidants include hindered phenols such as 2,2′-methylenebis (4-methyl-6-tert-butylphenol), 4,4′-methylenebis (2,6-di-tert-butylphenol). 4,4′-butylidenebis (3-methyl-6-tert-butylphenol), 2,6-di-tert-butyl-p-cresol, 1,3,5-trimethyl-2,4,6-tris (3 , 5-di-t-butyl-4-hydroxybenzyl) benzene, 1,6-hexanediol-bis [3- (3,5-di-t-butyl-4-hydroxyphenyl) propionate], pentaerythritol tetrakis [ 3- (3,5-di-t-butyl-4-hydroxyphenyl) propionate], triethylene glycol-bis [3- (3-t-butyl-5-methyl- -Hydroxyphenyl) propionate], n-oc
- hindered phenols for example, C 2 -C 10 alkylene diol-bis [1,6-hexanediol-bis [3- (3,5-di-t-butyl-4-hydroxyphenyl) propionate] and the like.
- Amine-based antioxidants include hindered amines such as tri- or tetra-C 1 -C 3 alkyl piperidines or derivatives thereof [eg 4-methoxy-2,2,6,6-tetramethylpiperidine, 4-benzoyloxy- 2,2,6,6-tetramethylpiperidine, 4-phenoxy-2,2,6,6-tetramethylpiperidine, etc.], bis (tri, tetra or penta C 1 -C 3 alkylpiperidine) C 2 -C 20 Alkylene dicarboxylic acid esters [for example, bis (2,2,6,6-tetramethyl-4-piperidyl) ogisalate, bis (2,2,6,6-tetramethyl-4-piperidyl) malonate, bis (2,2 , 6,6-Tetramethyl-4-piperidyl) adipate, bis (2,2,6,6-tetramethyl-4-piperidyl) sebacate Bis (1,2,2,6,6-pentamethyl-4-pipe
- phosphorus stabilizers include triisodecyl phosphite, trisnonyl phenyl phosphite, diphenyl isodecyl phosphite, phenyl diisodecyl phosphite, 2,2-methylene bis (4,6-di-).
- hydroquinone antioxidant examples include 2,5-di-t-butylhydroquinone
- examples of the quinoline antioxidant include 6-ethoxy-2,2,4-trimethyl-1,2. -Dihydroquinoline and the like
- sulfur antioxidants include, for example, dilauryl thiodipropionate, distearyl thiodipropionate and the like.
- antioxidants or stabilizers can be used alone or in combination of two or more.
- the blending amount of the antioxidant or stabilizer (H) is 0.1 to 1.0% by mass in the polyarylene sulfide resin composition of the present invention from the viewpoint that the gas generation preventing effect is remarkable, or
- the amount is preferably 0.01 to 5 parts by weight, particularly preferably 0.1 to 2 parts by weight, based on 100 parts by weight of the total weight of PAS (A) and the aromatic polyamide.
- the chlorine atom content contained in a heat resistant resin composition may be 900 ppm or less from a viewpoint of chlorine atom content regulation.
- the chlorine atom content contained in the heat-resistant resin composition is the chlorine atom content in a state in which not only the resin component but also all compounding components are contained. It can be carried out by performing combustion (900 ° C., Ar—O 2 atmosphere) in a sealed quartz tube, absorbing the generated gas in pure water, and measuring chloride ions by ion chromatography.
- the polyarylene sulfide resin composition of the present invention includes a processing heat stabilizer, a plasticizer, a mold release agent, a colorant, a lubricant, a weather resistance stabilizer, a foaming agent, and a rust preventive agent as long as the effects of the present invention are not impaired.
- An appropriate amount of wax, crystal nucleating agent, etc. may be added.
- polyarylene sulfide resin composition of the present invention may be appropriately mixed with other resin components in accordance with required characteristics.
- Resin components that can be used here include simple substances such as ethylene, butylene, pentene, butadiene, isoprene, chloroprene, styrene, ⁇ -methylstyrene, vinyl acetate, vinyl chloride, acrylic acid ester, methacrylic acid ester, and (meth) acrylonitrile.
- Polyester such as polyurethane, polyester, polybutylene terephthalate, polyethylene terephthalate, polyacetal, polycarbonate, polysulfone, polyallylsulfone, polyethersulfone, polyphenylene ether, polyetherketone, polyether Single weight of ether ketone, polyimide, polyamideimide, polyetherimide, silicone resin, epoxy resin, phenoxy resin, liquid crystal polymer, polyaryl ether, etc. Body, a random copolymer or a block copolymer and a graft copolymer, and the like.
- the recrystallization peak temperature of PAS (A) in the polyarylene sulfide resin composition is preferably 220 ° C. or higher. It is more preferably in the range of -240 ° C, and further preferably in the range of 222-235 ° C.
- the recrystallization peak temperature of PAS (A) in the polyarylene sulfide resin composition is within such a range, the compatibility with the polyamide (B) is good and the blister resistance is improved.
- the recrystallization peak temperature of the polyamide (B) in the polyarylene sulfide resin composition is preferably 265 ° C. or less, more preferably 240 to 265 ° C., and preferably 255 to 262 ° C. Further preferred.
- the recrystallization peak temperature of the polyamide (B) is in such a range, the compatibility with PAS (A) is good and the blister resistance is improved.
- the content ratio of the polyamide (B) in the resin composition is 8 to 20% by mass, and the resin composition is extracted with hexafluoroisopropanol at 70 ° C. for 15 minutes. What the extraction rate at the time of carrying out is 7 mass% or less is preferable.
- the polyamide is soluble in hexafluoroisopropanol, but the amount of polyamide extracted with hexafluoroisopropanol is lower than the polyamide content ratio in the resin composition. This suggests that it is in a form that is more difficult to dissolve, and is presumed to form a good PAS / polyamide polymer alloy, which is considered to improve heat resistance.
- the content of polyamide (B) in the polyarylene sulfide resin of the present invention is X (mass%)
- the extraction rate when the composition is extracted with hexafluoroisopropanol at 70 ° C. for 15 minutes is Y (mass%).
- the value of Y / X is preferably in the range of 0.01 to 0.40.
- the measuring method of this extraction rate it describes in an Example.
- the method for producing the polyarylene sulfide resin composition described in detail above specifically includes the PAS (A) and the polyamide (B), and, if necessary, other blending components in a tumbler or Henschel mixer. And then into a twin screw extruder, the ratio of the resin component discharge rate (kg / hr) to the screw speed (rpm) (discharge rate / screw speed) is 0.02 to 0.2 ( kg / hr ⁇ rpm) and a melt kneading method. By producing under such conditions, the volume average diameter of the aromatic polyamide that differentiates with the PAS (A) as a matrix can be adjusted to 1.0 to 0.1 ⁇ m.
- the above production method will be described in more detail.
- a method may be mentioned in which the above-described components are put into a twin-screw extruder and melt-kneaded under a temperature condition of a set temperature of 330 ° C. and a resin temperature of about 350 ° C.
- the discharge amount of the resin component is in the range of 5 to 50 kg / hr at a rotational speed of 250 rpm. In particular, it is preferably 20 to 35 kg / hr from the viewpoint of dispersibility. Therefore, the ratio (discharge amount / screw rotation number) between the resin component discharge amount (kg / hr) and the screw rotation speed (rpm) is particularly 0.08 to 0.14 (kg / hr ⁇ rpm). Is preferred.
- the fibrous reinforcing material (G-1) among the above-mentioned blending components can be introduced into the extruder from the side feeder of the twin-screw extruder so that the dispersibility of the fibrous reinforcing material (G-1) is good. It is preferable from the point which becomes.
- the position of the side feeder is preferably such that the ratio of the distance from the extruder resin charging portion to the side feeder with respect to the total screw length of the twin-screw extruder is 0.1 to 0.6. In particular, 0.2 to 0.4 is particularly preferable.
- the polyarylene sulfide resin composition melt-kneaded in this manner is obtained as pellets, and then subjected to melt molding using a molding machine to obtain the desired molded product.
- melt molding method examples include injection molding, extrusion molding, and compression molding.
- injection molding is particularly preferable for molding of surface mount electronic components.
- the molded product obtained in this way is excellent in heat resistance and has a high elastic modulus in a high temperature range, it can be preferably used for a molded product to be soldered.
- the surface temperature of the substrate in the heating furnace is a high temperature of 280 ° C. or higher, but the conventional PAS is melted or deformed.
- the polyarylene sulfide resin composition of the present invention can be soldered to the substrate without causing the molded article to melt or deform.
- the surface temperature of the substrate to be soldered is a temperature actually measured on the surface of the substrate in the soldering process in the surface mounting method.
- Specific examples of the substrate include printed circuit boards and circuit boards in the SMT method.
- the heating method in the heating furnace (reflow furnace) in the surface mounting method described above includes (1) a heat conduction method in which a substrate is heated on a heat-resistant belt moving on the heater, and (2) about Vapor phase soldering (VPS) method using latent heat when a fluorine-based liquid having a boiling point of 220 ° C. is condensed, (3) Hot air convection heat transfer method through which hot air is forced to circulate, (4) Examples include an infrared method in which heating is performed from the upper or upper and lower surfaces of the substrate with infrared rays, and (5) a method using a combination of heating with hot air and heating with infrared rays.
- VPS Vapor phase soldering
- the molded article of the polyarylene sulfide resin composition of the present invention can be used in a wide range of fields such as precision parts, various electric / electronic parts, machine parts, automotive parts, architecture, sanitary, sports, miscellaneous goods, and the like. Particularly, since it is excellent in flame retardancy, heat resistance, rigidity, etc., it is particularly useful as an electronic component for surface mounting as described above.
- the electronic component for surface mounting has the above-described molded product of the polyarylene sulfide resin composition and a metal terminal as essential components, and is printed on a printed circuit board or circuit board. It is fixed by the surface mounting method.
- the metal terminal of the electronic component is placed on the surface of the substrate so as to be in contact with the current-carrying portion on the substrate through the solder ball, and the inside of the reflow furnace is performed by the above heating method.
- surface mounting electronic components include connectors, switches, sensors, resistors, relays, capacitors, sockets, jacks, fuse holders, coil bobbins, IC and LED housings, and the like for surface mounting systems. It is done.
- the molded article of polyarylene sulfide resin obtained by the production method of the present invention can be obtained by adding UL flame resistance test standard UL-94 (underwriter) without adding a flame retardant such as so-called halogenated copper, antimony oxide or metal hydroxide. Laboratories, Incorporated, (UL) Standard No. 94) achieves high flame retardancy equivalent to V-0.
- UL-94 underwriter
- a flame retardant such as so-called halogenated copper, antimony oxide or metal hydroxide.
- Laboratories, Incorporated, (UL) Standard No. 94 achieves high flame retardancy equivalent to V-0.
- Examples 1 to 6 and Comparative Examples 1 to 5 According to the blending ratio shown in Table 1, polyarylene sulfide, aromatic polyamide and other blending materials (excluding glass fiber chopped strands) were uniformly mixed with a tumbler. Thereafter, the compounded material was charged into a vented twin-screw extruder “TEM-35B” manufactured by Toshiba Machine Co., Ltd., and the side feeder (the ratio of the distance from the resin charging portion to the side feeder with respect to the total length of the screw: 0.28).
- TEM-35B vented twin-screw extruder
- the difference between the mass of the sample weighed before sonication in HFIP and the mass of the sample remaining after sonication in HFIP (excluding the mass of the filter) is the sample extracted by HFIP.
- the value obtained by dividing this by the mass weighed before sonication in HFIP was used as the extraction rate.
- a pellet is used to form a connector-shaped cavity having a length of 25 mm, a width of 2 mm, a thickness of 0.3 to 0.5 mm, and a pitch of 45 pins and 0.2 mm.
- the mold releasability in the injection molding with the mold having it was evaluated.
- the molding conditions were a resin temperature of 340 ° C. and a mold temperature of 140 ° C., and the cooling time after completion of filling was gradually shortened to determine the time during which the molded product was not ejected from the mold.
- the minimum time T2 during which the molded product was ejected from the mold was 3 seconds or less, the release property was evaluated as “AA”.
- the compounded resins and materials in Table 1 are as follows.
- PA6T-1 an aromatic polyamide obtained by reacting 65 mol% terephthalic acid, 25 mol% isophthalic acid, and 10 mol% adipic acid as essential monomer components (melting point: 310 ° C, Tg120 ° C, peak molecular weight: 45) , 800)
- PA6T-2 an aromatic polyamide (melting point: 310 ° C., Tg: 120 ° C., peak molecular weight: 36) reacted with 64 mol% terephthalic acid, 34 mol% isophthalic acid and 2 mol% adipic acid as essential monomer components , 100)
- PA9T Polyamide 9T (Kuraray Co., Ltd.
- FIG. 1 is a graph showing a temperature profile in an infrared heating furnace in a blister resistance test.
- FIG. 2 shows the shape of a test piece used for evaluation of releasability.
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Abstract
Description
で表される3官能性の構造部位、あるいは、ナフチルスルフィド結合などを有していてもよいが、他の構造部位との合計モル数に対して、1モル%以下であること、特に実質的には含まれないことがPAS(A)中の塩素原子含有量低減の観点から好ましい。
(1)N-メチルピロリドン、ジメチルアセトアミドなどのアミド系溶剤やスルホラン等のスルホン系溶媒中で硫化ナトリウムとp-ジクロルベンゼンを反応させる方法、
(2)p-ジクロルベンゼンを硫黄と炭酸ソーダの存在下で重合させる方法、
(3)極性溶媒中で硫化ナトリウムあるいは水硫化ナトリウムと水酸化ナトリウム又は硫化水素と水酸化ナトリウムの存在下で重合させる方法、
(4)p-クロルチオフェノールの自己縮合による方法
含水アルカリ金属硫化物、又は、
含水アルカリ金属水硫化物及びアルカリ金属水酸化物と、
N-メチルピロリドンと、
非加水分解性有機溶媒とを、
脱水させながら反応させて、スラリー(I)を製造する工程
工程2:
次いで、前記スラリー(I)中、
ジクロルベンゼンと、
前記アルカリ金属水硫化物と、
前記N-メチルピロリドンの加水分解物のアルカリ金属塩とを、
反応させて重合を行う工程
装置:超高温ポリマー分子量分布測定装置(株式会社センシュー科学製「SSC-7000」)
カラム:UT-805L(昭和電工株式会社製)
カラム温度:210℃
溶媒:1-クロロナフタレン
測定方法:UV検出器(360nm)
で表されるテレフタル酸アミド構造を繰り返し構造単位の一つとして有するものである。
前記構造式a中、Rは炭素原子数2~12アルキレン基を表す。かかるテレフタル酸アミド構造は、具体的には、テレフタル酸、又はテレフタル酸ジハライドと、炭素原子数2~12の脂肪族ジアミンとの反応によって形成されるものである。ここで用いる炭素原子数2~12の脂肪族ジアミンは、具体的には、エチレンジアミン、プロパンジアミン、1,4-ブタンジアミン、1,6-ヘキサンジアミン、1,7-ヘプタンジアミン、1,8-オクタンジアミン、1,9-ノナンジアミン、1,10-デカンジアミン、1,11-ウンデカンジアミン、1,12-ドデカンジアミン等の直鎖状脂肪族アルキレンジアミン;1-ブチル-1,2-エタンジアミン、1,1-ジメチル-1,4-ブタンジアミン、1-エチル-1,4-ブタンジアミン、1,2-ジメチル-1,4-ブタンジアミン、1,3-ジメチル-1,4-ブタンジアミン、1,4-ジメチル-1,4-ブタンジアミン、2,3-ジメチル-1,4-ブタンジアミン、2-メチル-1,5-ペンタンジアミン、3-メチル-1,5-ペンタンジアミン、2,5-ジメチル-1,6-ヘキサンジアミン、2,4-ジメチル-1,6-ヘキサンジアミン、3,3-ジメチル-1,6-ヘキサンジアミン、2,2-ジメチル-1,6-ヘキサンジアミン、2,2,4-トリメチル-1,6-ヘキサンジアミン、2,4,4-トリメチル-1,6-ヘキサンジアミン、2,4-ジエチル-1,6-ヘキサンジアミン、2,2-ジメチル-1,7-ヘプタンジアミン、2,3-ジメチル-1,7-ヘプタンジアミン、2,4-ジメチル-1,7-ヘプタンジアミン、2,5-ジメチル-1,7-ヘプタンジアミン、2-メチル-1,8-オクタンジアミン、3-メチル-1,8-オクタンジアミン、4-メチル-1,8-オクタンジアミン、1,3-ジメチル-1,8-オクタンジアミン、1,4-ジメチル-1,8-オクタンジアミン、2,4-ジメチル-1,8-オクタンジアミン、3,4-ジメチル-1,8-オクタンジアミン、4,5-ジメチル-1,8-オクタンジアミン、2,2-ジメチル-1,8-オクタンジアミン、3,3-ジメチル-1,8-オクタンジアミン、4,4-ジメチル-1,8-オクタンジアミン、5-メチル-1,9-ノナンジアミン等の分岐鎖状脂肪族アルキレンジアミン;シクロヘキサンジアミン、メチルシクロヘキサンジアミン、イソホロンジアミン、ノルボルナンジメチルアミン、トリシクロデカンジメチルアミン等の脂環族ジアミン類が挙げられる。
さらに前記芳香族ポリアミドは、耐熱性と耐湿性とのバランスから
前記構造式aで表されるテレフタル酸アミド構造を65~70モル%、
前記構造式bで表されるイソフタル酸アミド構造を20~25モル%、
前記構造式cで表される酸アミド構造を10~15モル%、
で構成されるポリアミドが好ましい。
(1)テレフタル酸を含むジカルボン酸成分の酸ハライドと、炭素原子数2~12の脂肪族ジアミンを含むジアミン成分とを、お互いに相溶しない二種の溶媒に溶解した後、アルカリおよび触媒量の第4級アンモニウム塩の存在下に2液を混合、撹拌して重縮合反応を行う界面重合法。
(2)テレフタル酸を含むジカルボン酸成分の酸ハライドと、炭素原子数2~12の脂肪族ジアミンを含むジアミン成分とを第3級アミンなどの酸を受容するアルカリ性化合物の存在下、有機溶媒中で反応せしめる溶液重合法。
(3)テレフタル酸を含むジカルボン酸成分のジエステル化物と、芳香族ジアミンを原料として溶融状態でアミド交換反応する溶融重合法。
M2+ 1-xAlx(OH)2・(CO3)X/2mH2O 式1
(式1中、M2+はMg,Ca及びZnよりなる群から選ばれた二価金属イオンを示し、そしてx及びmは、0<x<0.5かつ0≦m≦2を満足する数値である。)
で表される化合物であることが好ましい。
Mg2+ 6Al2(OH)16・(CO3)・4H2O
で表される天然ハイドロタルサイトの他、
Mg0.7Al0.3(OH)2(CO3)0.15・0.54H2O、
Mg4.5Al2(OH)13CO3・3.5H2O、
Mg4.3Al2(OH)12.6CO3・3.5H2O、
Mg4.2Al2(OH)12.4CO3、
Zn6Al2(OH)16CO3・4H2O、
Ca6Al2(OH)16CO3・4H2O等が挙げられる。
これらのなかでも特に本発明ではガス発生防止の点から下記式2
Mg2+ 1-xAlx(OH)2・(CO3)X/2mH2O 式2
(式2中、x及びmは、0<x<0.5かつ0≦m≦2を満足する数値である。)
で表されるMg-Al系ハイドロタルサイト様化合物であることが特に好ましい。
(実施例1~6及び比較例1~5)
表1記載する配合比率にしたがい、ポリアリーレンスルフィド、芳香族ポリアミド及びその他配合材料(ガラス繊維チョップドストランドを除く)をタンブラーで均一に混合した。その後、東芝機械株式会社製ベント付き2軸押出機「TEM-35B」に前記配合材料を投入し、また、サイドフィーダー(スクリュー全長に対する樹脂投入部から該サイドフィーダーまでの距離の比率:0.28)から繊維径10μm、長さ3mmのガラス繊維チョップドストランドを上記配合材料60質量部に対して40質量部の割合で供給しながら、樹脂成分吐出量25kg/hr、スクリュー回転数250rpm、樹脂成分の吐出量(kg/hr)とスクリュー回転数(rpm)との比率(吐出量/スクリュー回転数)=0.1(kg/hr・rpm)、設定樹脂温度330℃で溶融混練して樹脂組成物のペレットを得た。
次いで、このペレットを用いて以下の各種評価試験を行った。
フロンティアラボ社製ダブルショットパイロライザーを備えた、島津製作所社製ガスクロマトグラフィーGC2010(検出器:質量分析装置QP2010)にて、330℃、15分間に発生する発生ガス量を、モノクロロベンゼンを標準物質として検量した。
樹脂組成物ペレットを射出成形機を用いて成形し、形状が縦50mm×横10mm×高さ8mm、0.8mm厚さの箱形コネクターを作成した。
(乾燥時のブリスター評価)
上記箱形コネクターを赤外線加熱炉(山陽精工製、SMTスコープ)を用いて、図1に示す温度プロファイルに従ってリフロー工程を行った。評価は加熱後に箱形コネクターを目視観察し、下記の2段階の基準で評価した。
A:外観に変化なし。
B:ブリスターもしくは融解が観察された。
(調湿後のブリスター評価)
射出成形品を23℃、60%RH、24時間の環境下で調湿した後に、リフローシミュレータにかけて外観観察した。
A:ブリスターなし
B:小さいブリスターが少量発生
C:ブリスターが大量に発生
UL-94垂直試験に準拠して燃焼試験を行い、難燃性を評価した。
樹脂組成物ペレットを密閉石英管内で燃焼(900℃、Ar-O2雰囲気)処理し、発生したガスを純水に吸収させてイオンクロマトグラフ法により塩化物イオンを定量し、塩素原子含有量を測定した。
〈処理装置〉
燃焼ガス吸収装置:ダイアインスツルメンツ社製「AQF-100」
イオンクロマトグラフ:ダイオネクス社製「ICS-3000」
試料をポリアリーレンスルフィド(A)及び芳香族ポリアミド(B)の融点以上の温度(330℃)までにいったん加熱し(昇温速度:20℃/分)、溶融状態にした後(保持時間:3分)、試料を20℃/分の降温速度で120℃まで冷却した時に、発現した再結晶化ピーク温度(Tc2)を測定した。
樹脂組成物のペレットを、凍結粉砕機を用いて凍結粉砕し、目開き500μmの篩を通して粗粒を取り除いた後、20mlサンプル管に凍結粉砕した試料約1gを精密に秤量し、ヘキサフルオロイソプロパノール(以下「HFIP」と略記する。)を4ml加えた。次に、試料とHFIPの入ったサンプル管を70℃で15分超音波洗浄機にて超音波処理した。さらに、超音波処理液を、質量を精密に秤量したフィルターを用いてろ過した。その後、試料をフィルターごと乾燥して秤量し、HFIPに溶解しなかった試料の質量を測定した。HFIP中での超音波処理前に秤量した試料の質量と、HFIP中で超音波処理後、フィルターの残った試料の質量(フィルターの質量は除く。)との差が、HFIPにより抽出された試料の質量であり、これをHFIP中での超音波処理前に秤量した質量で除した値を百分率で示した値を抽出率とした。
樹脂組成物のペレットを用いて、図2に示す形状のキャビティを有する金型での射出成形における離型性を評価した。成形条件は、樹脂温度340℃、金型温度130℃で、充填完了後の冷却時間を徐々に短くして、金型から成形品がエジェクトされなくなる時間を求めた。金型から成形品がエジェクトされる最低の時間T1により、以下のように評価した。
A:T1が10秒以下
B:T1が10~15秒
C:T1が15秒以上
(1)PPS-1:ポリフェニレンスルフィド(DIC株式会社製「DSP LR-1G」;非ニュートン指数1.1、ピーク分子量28,000、Mw/Mn=7.5)
(2)PA6T-1:テレフタル酸65モル%、イソフタル酸25モル%、アジピン酸10モル%を必須の単量体成分として反応させた芳香族ポリアミド(融点310℃、Tg120℃、ピーク分子量:45,800)
(3)PA6T-2:テレフタル酸64モル%、イソフタル酸34モル%、アジピン酸2モル%を必須の単量体成分として反応させた芳香族ポリアミド(融点310℃、Tg120℃、ピーク分子量:36,100)
(4)PA9T:ポリアミド9T(株式会社クラレ製「ジェネスタ N1000A」)
(5)PA46:ポリアミド46(ディーエスエム ジャパン エンジニアリング プラスチックス株式会社製「スタニール TS300」)
(6)Si:エポキシシラン(γ-グリシドキシプロピルトリメトキシシラン)
(7)ホスファイト:リン系加工熱安定剤(株式会社ADEKA製「アデカスタブ PEP-36」、ビス(2,6-ジ-t-ブチル-4-メチルフェニル)ペンタエリスリトールジホスファイト)
(8)ホスフォナイト:リン系加工熱安定剤(クラリアントジャパン株式会社製「ホスタノックス P-EPQ」、テトラキス(2,4-ジ-t-ブチルフェニル)-4,4’-ビフェニレンジホスフォナイト)
(9)次亜リン酸Ca:次亜リン酸カルシウム
(10)酸化防止剤:ヒンダードフェノール系酸化防止剤(チバ・スペシャルティ・ケミカルズ株式会社製「イルガノックス 1098」)
(11)ハイドロタルサイト:協和化学工業株式会社製「DHT-4A」
(12)GF:ガラス繊維チョップドストランド(繊維径10μm、長さ3mm)
Claims (16)
- ポリアリーレンスルフィド(A)及びポリアミド(B)を必須成分とするポリアリーレンスルフィド樹脂組成物であって、前記(A)成分、(B)成分に加え、芳香族ホスファイト化合物及び芳香族ホスフォナイト化合物からなる群から選択される有機燐化合物(C)、並びに、亜リン酸金属塩及び次亜リン酸金属塩から選択される無機燐化合物(D)を必須の成分とすることを特徴とするポリアリーレンスルフィド樹脂組成物。
- 前記ポリアミド(B)が、テレフタル酸アミドを必須の構造単位とする芳香族ポリアミドである請求項1記載のポリアリーレンスルフィド樹脂組成物。
- 前記ポリアミド(B)が、前記構造式aで表されるテレフタル酸アミド構造(a)を65~70モル%、前記構造式bで表されるイソフタル酸アミド構造(b)を20~25モル%、前記構造式cで表される脂肪族炭化水素構造(c)を10~15モル%となる割合で含有するものである請求項3記載のポリアリーレンスルフィド樹脂組成物。
- 前記ポリアミド(B)が、ポリアミド9T又はポリアミド46である請求項1記載のポリアリーレンスルフィド樹脂組成物。
- 前記ポリアリーレンスルフィド(A)と、前記ポリアミド(B)との配合割合が、(A)/(B)の質量比で95/5~50/50となる割合である請求項1~5のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 有機燐化合物(C)の配合割合が、ポリアリーレンスルフィド(A)、ポリアミド(B)、有機燐化合物(C)及び無機燐化合物(D)の合計100質量部に対し、0.1~1質量部となる範囲である請求項1~6のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 無機燐化合物(D)の配合割合が、ポリアリーレンスルフィド(A)、ポリアミド(B)、有機燐化合物(C)及び無機燐化合物(D)の合計100質量部に対し、0.1~1重量部となる範囲である請求項1~7のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 前記ポリアリーレンスルフィド(A)が、ゲル浸透クロマトグラフィーを用いた測定において分子量25,000~30,000の範囲に分子量ピークを有しており、重量平均分子量(Mw)と数平均分子量(Mn)との比率(Mw/Mn)が5~10の範囲にあり、かつ非ニュートン指数が0.9~1.3の範囲にあるものである請求項1~8のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 前記ポリアリーレンスルフィド(A)が塩素原子含有量1,500~2,000ppmのものである請求項1~9のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 前記(A)~(D)の各成分に加え、さらに、エポキシ系シランカップリング剤(E)、ハイドロタルサイト類化合物(F)及び繊維状強化材(G-1)又は無機質フィラー(G-2)を含有する請求項1~10のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 前記(A)~(D)及び(G-1)又は(G-2)の各成分に加え、さらに、酸化防止剤(H)を含有する請求項1~11のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 前記ポリアリーレンスルフィド樹脂組成物を示差走査熱量(DSC)測定した場合における前記ポリアリーレンスルフィド樹脂(A)の再結晶化ピーク温度が220℃以上であり、かつ前記ポリアミド(B)の再結晶化ピーク温度が265℃以下である請求項1~12のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 前記ポリアリーレンスルフィド樹脂組成物中のポリアミド(B)の含有比率が8~20質量%であり、かつ前記ポリアリーレンスルフィド樹脂組成物をヘキサフルオロイソプロパノールで70℃15分間抽出した際の抽出率が7質量%以下である請求項1~13のいずれか1項記載のポリアリーレンスルフィド樹脂組成物。
- 請求項1~14のいずれか1項記載のポリアリーレンスルフィド樹脂組成物を二軸混練押出機に投入し、樹脂成分の吐出量(kg/hr)とスクリュー回転数(rpm)との比率(吐出量/スクリュー回転数)が0.02~0.2(kg/hr・rpm)なる条件下に溶融混練し、次いで取り出すことを特徴とするポリアリーレンスルフィド樹脂組成物の製造方法。
- 請求項1~14のいずれか1項記載のポリアリーレンスルフィド樹脂組成物の成形物と、金属端子とを必須の構成要素とすることを特徴とする表面実装用電子部品。
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US12/865,440 US8044126B2 (en) | 2008-01-31 | 2009-01-28 | Polyarylene sulfide resin composition, production method thereof and surface mount electronic component |
CN2009801000330A CN101765639B (zh) | 2008-01-31 | 2009-01-28 | 聚亚芳基硫醚树脂组合物、其制造方法和表面安装用电子部件 |
KR1020097026627A KR101161760B1 (ko) | 2008-01-31 | 2009-01-28 | 폴리아릴렌설피드 수지 조성물, 그 제조 방법 및 표면 실장용 전자 부품 |
JP2009521039A JP4356038B2 (ja) | 2008-01-31 | 2009-01-28 | ポリアリーレンスルフィド樹脂組成物、その製造方法及び表面実装用電子部品 |
EP09704994.4A EP2236560B1 (en) | 2008-01-31 | 2009-01-28 | Polyarylene sulfide resin composition, production method thereof and surface mount electronic component |
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KR (1) | KR101161760B1 (ja) |
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JP4356038B2 (ja) | 2009-11-04 |
EP2236560A1 (en) | 2010-10-06 |
EP2236560A4 (en) | 2015-01-28 |
US20100331463A1 (en) | 2010-12-30 |
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CN101765639A (zh) | 2010-06-30 |
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TW200936696A (en) | 2009-09-01 |
US8044126B2 (en) | 2011-10-25 |
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