WO2009078322A1 - 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法 - Google Patents

表面反射防止膜形成用組成物及びそれを用いたパターン形成方法 Download PDF

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Publication number
WO2009078322A1
WO2009078322A1 PCT/JP2008/072432 JP2008072432W WO2009078322A1 WO 2009078322 A1 WO2009078322 A1 WO 2009078322A1 JP 2008072432 W JP2008072432 W JP 2008072432W WO 2009078322 A1 WO2009078322 A1 WO 2009078322A1
Authority
WO
WIPO (PCT)
Prior art keywords
composition
antireflective film
top antireflective
forming
formation
Prior art date
Application number
PCT/JP2008/072432
Other languages
English (en)
French (fr)
Inventor
Yasushi Akiyama
Go Noya
Katsutoshi Kuramoto
Yusuke Takano
Original Assignee
Az Electronic Materials(Japan)K.K.
Az Electronic Materials Usa Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Az Electronic Materials(Japan)K.K., Az Electronic Materials Usa Corp. filed Critical Az Electronic Materials(Japan)K.K.
Priority to CN2008801199918A priority Critical patent/CN101849209B/zh
Priority to EP08861766A priority patent/EP2233977B1/en
Priority to KR1020107015127A priority patent/KR101486390B1/ko
Priority to US12/747,652 priority patent/US8568955B2/en
Publication of WO2009078322A1 publication Critical patent/WO2009078322A1/ja

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Materials For Photolithography (AREA)
  • Paints Or Removers (AREA)

Abstract

　少なくとも１種のフッ素含有化合物、下記一般式(１)で表される４級アンモニウム化合物(式中、Ｒ１、Ｒ２、Ｒ３及びＲ４のうち少なくとも一つは水酸基もしくはアルカノール基を表し、その他は水素もしくは炭素数１から１０のアルキル基を表す。Ｘ-は水酸基、ハロゲン化物イオン、硫酸イオンを表す。)、および、必要に応じ、水溶性ポリマー、酸、界面活性剤、水性溶媒からなる表面反射防止膜形成用組成物。この表面反射防止膜形成用組成物は、従来の表面反射防止膜形成用組成物に比べ、低塗布で同等の機能を有する。 一般式(１):
PCT/JP2008/072432 2007-12-14 2008-12-10 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法 WO2009078322A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN2008801199918A CN101849209B (zh) 2007-12-14 2008-12-10 用于形成顶层抗反射膜的组合物以及使用该组合物的图案形成方法
EP08861766A EP2233977B1 (en) 2007-12-14 2008-12-10 Composition for formation of top antireflective film, and pattern formation method using the composition
KR1020107015127A KR101486390B1 (ko) 2007-12-14 2008-12-10 표면 반사 방지막 형성용 조성물 및 이를 사용한 패턴 형성 방법
US12/747,652 US8568955B2 (en) 2007-12-14 2008-12-10 Composition for formation of top antireflective film, and pattern formation method using the composition

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-323198 2007-12-14
JP2007323198A JP4723557B2 (ja) 2007-12-14 2007-12-14 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法

Publications (1)

Publication Number Publication Date
WO2009078322A1 true WO2009078322A1 (ja) 2009-06-25

Family

ID=40795438

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/072432 WO2009078322A1 (ja) 2007-12-14 2008-12-10 表面反射防止膜形成用組成物及びそれを用いたパターン形成方法

Country Status (8)

Country Link
US (1) US8568955B2 (ja)
EP (1) EP2233977B1 (ja)
JP (1) JP4723557B2 (ja)
KR (1) KR101486390B1 (ja)
CN (1) CN101849209B (ja)
MY (1) MY148549A (ja)
TW (1) TWI447525B (ja)
WO (1) WO2009078322A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5697523B2 (ja) * 2011-04-12 2015-04-08 メルクパフォーマンスマテリアルズＩｐ合同会社 上面反射防止膜形成用組成物およびそれを用いたパターン形成方法
US10416561B2 (en) * 2016-04-22 2019-09-17 AGC Inc. Coating composition, and process for producing photoresist laminate
WO2018012283A1 (ja) * 2016-07-13 2018-01-18 旭硝子株式会社 コーティング用組成物の製造方法およびフォトレジスト積層体の製造方法
CN114035405B (zh) * 2022-01-07 2022-04-22 甘肃华隆芯材料科技有限公司 制备顶部抗反射膜的组合物、顶部抗反射膜和含氟组合物

Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219847A (ja) 1988-05-19 1990-01-23 Basf Ag ポジチブ及びネガチブ処理感放射線混合物及びレリーフパターンの作製方法
JPH0227660A (ja) 1988-07-18 1990-01-30 Sanyo Electric Co Ltd 非水系二次電池
JPH02209977A (ja) 1988-10-28 1990-08-21 Internatl Business Mach Corp <Ibm> 高感度ポジ型フオトレジスト組成物
JPH03206458A (ja) 1989-03-14 1991-09-09 Internatl Business Mach Corp <Ibm> 化学的に増補されたフオトレジスト
JPH04211258A (ja) 1990-01-30 1992-08-03 Wako Pure Chem Ind Ltd 化学増幅型レジスト材料
JPH05249682A (ja) 1991-06-18 1993-09-28 Wako Pure Chem Ind Ltd 新規なレジスト材料及びパタ−ン形成方法
JPH07181685A (ja) * 1993-12-21 1995-07-21 Shin Etsu Chem Co Ltd 光反射性防止材料及びパターン形成方法
JPH07295210A (ja) 1994-04-25 1995-11-10 Shin Etsu Chem Co Ltd 光反射性防止材料及びパターン形成方法
JPH0844066A (ja) * 1994-08-01 1996-02-16 Mitsubishi Chem Corp 表面反射防止塗布組成物
JPH08305032A (ja) * 1995-05-01 1996-11-22 Hoechst Ind Kk 反射防止コーティング用組成物
WO2001035167A1 (fr) * 1999-11-10 2001-05-17 Clariant International Ltd. Composition pour revetement antireflet
JP2003345026A (ja) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
JP2004037887A (ja) 2002-07-04 2004-02-05 Clariant (Japan) Kk 反射防止コーティング用組成物およびパターン形成方法
JP2005157259A (ja) 2003-10-28 2005-06-16 Tokyo Ohka Kogyo Co Ltd レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001281874A (ja) * 2000-03-31 2001-10-10 Tokyo Ohka Kogyo Co Ltd リソグラフィー用反射防止膜形成用組成物およびこれを用いたレジスト積層体
JP2008129080A (ja) * 2006-11-16 2008-06-05 Az Electronic Materials Kk 上面反射防止膜用組成物、およびそれを用いたパターン形成方法
JP5077569B2 (ja) * 2007-09-25 2012-11-21 信越化学工業株式会社 パターン形成方法
WO2009066768A1 (ja) * 2007-11-22 2009-05-28 Az Electronic Materials(Japan)K.K 表面反射防止膜用組成物およびパターン形成方法

Patent Citations (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0219847A (ja) 1988-05-19 1990-01-23 Basf Ag ポジチブ及びネガチブ処理感放射線混合物及びレリーフパターンの作製方法
JPH0227660A (ja) 1988-07-18 1990-01-30 Sanyo Electric Co Ltd 非水系二次電池
JPH02209977A (ja) 1988-10-28 1990-08-21 Internatl Business Mach Corp <Ibm> 高感度ポジ型フオトレジスト組成物
JPH03206458A (ja) 1989-03-14 1991-09-09 Internatl Business Mach Corp <Ibm> 化学的に増補されたフオトレジスト
JPH04211258A (ja) 1990-01-30 1992-08-03 Wako Pure Chem Ind Ltd 化学増幅型レジスト材料
JPH05249682A (ja) 1991-06-18 1993-09-28 Wako Pure Chem Ind Ltd 新規なレジスト材料及びパタ−ン形成方法
JPH07181685A (ja) * 1993-12-21 1995-07-21 Shin Etsu Chem Co Ltd 光反射性防止材料及びパターン形成方法
JPH07295210A (ja) 1994-04-25 1995-11-10 Shin Etsu Chem Co Ltd 光反射性防止材料及びパターン形成方法
JPH0844066A (ja) * 1994-08-01 1996-02-16 Mitsubishi Chem Corp 表面反射防止塗布組成物
JPH08305032A (ja) * 1995-05-01 1996-11-22 Hoechst Ind Kk 反射防止コーティング用組成物
WO2001035167A1 (fr) * 1999-11-10 2001-05-17 Clariant International Ltd. Composition pour revetement antireflet
JP2003345026A (ja) * 2002-05-24 2003-12-03 Tokyo Ohka Kogyo Co Ltd 反射防止膜形成用塗布液組成物およびこれを用いたホトレジスト積層体、並びにホトレジストパターンの形成方法
JP2004037887A (ja) 2002-07-04 2004-02-05 Clariant (Japan) Kk 反射防止コーティング用組成物およびパターン形成方法
JP2005157259A (ja) 2003-10-28 2005-06-16 Tokyo Ohka Kogyo Co Ltd レジスト上層膜形成材料、およびこれを用いたレジストパターン形成方法

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
H. ITO; C.G. WILLSON, POLYM. ENG. SCI., vol. 23, 1983, pages 1012
See also references of EP2233977A4

Also Published As

Publication number Publication date
MY148549A (en) 2013-04-30
JP2009145658A (ja) 2009-07-02
US8568955B2 (en) 2013-10-29
KR20100099265A (ko) 2010-09-10
JP4723557B2 (ja) 2011-07-13
KR101486390B1 (ko) 2015-01-26
CN101849209B (zh) 2012-11-28
US20100286318A1 (en) 2010-11-11
EP2233977A8 (en) 2010-11-03
EP2233977A4 (en) 2010-12-29
EP2233977A1 (en) 2010-09-29
CN101849209A (zh) 2010-09-29
EP2233977B1 (en) 2012-07-11
TW200937128A (en) 2009-09-01
TWI447525B (zh) 2014-08-01

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