TW200628979A - Positive resist composition and manufacturing method of resist pattern - Google Patents

Positive resist composition and manufacturing method of resist pattern

Info

Publication number
TW200628979A
TW200628979A TW094141161A TW94141161A TW200628979A TW 200628979 A TW200628979 A TW 200628979A TW 094141161 A TW094141161 A TW 094141161A TW 94141161 A TW94141161 A TW 94141161A TW 200628979 A TW200628979 A TW 200628979A
Authority
TW
Taiwan
Prior art keywords
group
acid
resist composition
general formula
itself
Prior art date
Application number
TW094141161A
Other languages
Chinese (zh)
Other versions
TWI304153B (en
Inventor
Yusuke Nakagawa
Shinichi Hidesaka
Kazuhiko Nakayama
Ryotaro Hayashi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200628979A publication Critical patent/TW200628979A/en
Application granted granted Critical
Publication of TWI304153B publication Critical patent/TWI304153B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A resist composition improved in EL margin and measuring faithfulness (mask linearity) is provided. The resist composition comprises a resin component (A) which increases alkali solubility of itself by an action of an acid, an acid releasing component (B) which releases an acid by an exposure of itself, wherein the (B) component contains an onium salt based acid generating agent (B1) having a cation portion represented by the following general formula (b-1) and an oxime sulfonate based acid generating agent including a following structure represented by the following general formula (b-2), , wherein R1" is an alkyl group, alkoxy group, halogen atom, or hydroxyl group, R2" and R3" are independently aryl group or alkyl group which may have a substituent group, and n represents an integer of 0 to 3, , wherein R21' represents an organic group, R22' represents a monovalent organic group, or a cyano group.
TW94141161A 2004-12-17 2005-11-23 Positive resist composition and manufacturing method of resist pattern TWI304153B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004366584A JP4319136B2 (en) 2004-12-17 2004-12-17 Positive resist composition and resist pattern forming method

Publications (2)

Publication Number Publication Date
TW200628979A true TW200628979A (en) 2006-08-16
TWI304153B TWI304153B (en) 2008-12-11

Family

ID=36587685

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94141161A TWI304153B (en) 2004-12-17 2005-11-23 Positive resist composition and manufacturing method of resist pattern

Country Status (3)

Country Link
JP (1) JP4319136B2 (en)
TW (1) TWI304153B (en)
WO (1) WO2006064622A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound
TWI465848B (en) * 2008-08-22 2014-12-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition, method of forming resist pattern, and polymeric compound
US8980524B2 (en) 2010-01-05 2015-03-17 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
US9023580B2 (en) 2011-11-24 2015-05-05 Tokyo Ohka Kogyo Co., Ltd. Method of forming polymeric compound, resist composition and method of forming resist pattern

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7488568B2 (en) 2007-04-09 2009-02-10 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern, compound and acid generator
JP5066405B2 (en) 2007-08-02 2012-11-07 富士フイルム株式会社 Resist composition for electron beam, X-ray or EUV, and pattern forming method using the composition
JP5422293B2 (en) * 2008-08-01 2014-02-19 富士フイルム株式会社 Positive resist composition and pattern forming method using the same
JP5393325B2 (en) * 2008-08-01 2014-01-22 富士フイルム株式会社 Positive resist composition and pattern forming method using the same

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11236416A (en) * 1997-10-08 1999-08-31 Shin Etsu Chem Co Ltd Polystyrene-based polymer compound, chemical amplification positive type resist material and pattern formation
JP4289937B2 (en) * 2003-03-28 2009-07-01 東京応化工業株式会社 Photoresist composition and resist pattern forming method using the same
JP2004334060A (en) * 2003-05-12 2004-11-25 Shin Etsu Chem Co Ltd Photoacid generator for chemically amplified resist, resist material containing the same and pattern forming method
JP2004341062A (en) * 2003-05-13 2004-12-02 Fuji Photo Film Co Ltd Positive resist composition

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI465848B (en) * 2008-08-22 2014-12-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition, method of forming resist pattern, and polymeric compound
US8980524B2 (en) 2010-01-05 2015-03-17 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method of forming resist pattern
US9023580B2 (en) 2011-11-24 2015-05-05 Tokyo Ohka Kogyo Co., Ltd. Method of forming polymeric compound, resist composition and method of forming resist pattern
US8795947B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition and method of forming resist pattern
US8795948B2 (en) 2012-03-22 2014-08-05 Tokyo Ohka Kogyo Co., Ltd. Resist composition, method of forming resist pattern and polymeric compound

Also Published As

Publication number Publication date
TWI304153B (en) 2008-12-11
WO2006064622A1 (en) 2006-06-22
JP4319136B2 (en) 2009-08-26
JP2006171568A (en) 2006-06-29

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