JP2002268223A5 - - Google Patents

Description

（上記式中、Ｒ₁₁は、メチル基、エチル基、ｎ−プロピル基、イソプロピル基、ｎ−ブチル基、イソブチル基又はｓｅｃ−ブチル基を表し、Ｚは、炭素原子とともに脂環式炭化水素基を形成するのに必要な原子団を表す。
Ｒ₁₂〜Ｒ₁₆は、各々独立に、炭素数１〜４個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表し、但し、Ｒ₁₂〜Ｒ₁₄のうち少なくとも１つ、もしくはＲ₁₅、Ｒ₁₆のいずれかは脂環式炭化水素基を表す。
Ｒ₁₇〜Ｒ₂₁は、各々独立に、水素原子、炭素数１〜４個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表し、但し、Ｒ₁₇〜Ｒ₂₁のうち少なくとも１つは脂環式炭化水素基を表す。また、Ｒ₁₉、Ｒ₂₁のいずれかは炭素数１〜４個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表す。
Ｒ₂₂〜Ｒ₂₅は、各々独立に、炭素数１〜４個の、直鎖もしくは分岐のアルキル基又は脂環式炭化水素基を表し、但し、Ｒ₂₂〜Ｒ₂₅のうち少なくとも１つは脂環式炭化水素基を表す。また、Ｒ₂₃とＲ₂₄は、互いに結合して環を形成していてもよい。）
【化２】

（上記式中、Ｒ₁〜Ｒ₅は、各々独立に、置換基を有していてもよい脂肪族炭化水素基又は芳香族炭化水素基を表す。但し、Ｒ₁〜Ｒ₃の内の２個は、互いに結合して環を形成してもよく、また、Ｒ₄とＲ₅とは、互いに結合して環を形成してもよい。Ｘ^-は、下記のアニオンのいずれかを表す。）
【化３】

上記式中、Ｒ₆〜Ｒ₁₀は、各々独立に、置換基を有していてもよい脂肪族炭化水素基を表す。但し、Ｒ₆とＲ₇とは、互いに結合して環を形成してもよく、また、Ｒ₈〜Ｒ₁₀の内の２個は、互いに結合して環を形成してもよい。
【請求項２】 更に、（Ｃ）フッ素系及び／又はシリコン系界面活性剤を含有することを特徴とする請求項１に記載のポジ型レジスト組成物。
【請求項３】 更に、（Ｄ）有機塩基性化合物を含有することを特徴とする請求項１又は請求項２に記載のポジ型レジスト組成物。
【請求項４】 請求項１〜３のいずれかに記載のポジ型レジスト組成物によりレジスト膜を形成し、当該レジスト膜を露光、現像することを特徴とするパターン形成方法。 [Claims]
1. A resin having an aliphatic cyclic hydrocarbon group in a side chain and having a dissolution rate in an alkali developing solution increased by the action of an acid, and (B) generating an acid by irradiation with actinic rays or radiation. In a positive resist composition containing a compound,
The resin of (A) is a resin containing at least one repeating unit having a partial structure containing an alicyclic hydrocarbon represented by the following general formulas (pI) to (pVI); A positive resist composition, wherein the compound is a compound represented by the following formula (I) or (II).
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(In the above formula, R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group, and Z is an alicyclic hydrocarbon group together with a carbon atom. Represents an atomic group necessary to form
R _{12 to} R ₁₆ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R _{12 to} R ₁₄ , or Either R ₁₅ or R ₁₆ represents an alicyclic hydrocarbon group.
R _{17 to} R ₂₁ each independently represent a hydrogen atom, a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R _{17 to} R ₂₁ One represents an alicyclic hydrocarbon group. Further, either R ₁₉ or R ₂₁ represents a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms.
R _{22 to} R ₂₅ each independently represent a linear or branched alkyl group or an alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R _{22 to} R ₂₅ is an aliphatic group; Represents a cyclic hydrocarbon group. R ₂₃ and R ₂₄ may be bonded to each other to form a ring. )
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(In the above formula, R _{1 to} R ₅ each independently represent an aliphatic hydrocarbon group or an aromatic hydrocarbon group which may have a substituent, provided that 2 of R _{1 to} R ₃ R ₄ and R ₅ may combine with each other to form a ring, and X ⁻ represents any of the following anions. )
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In the above formula, R _{6 to} R ₁₀ each independently represent an aliphatic hydrocarbon group which may have a substituent. However, R ₆ and R ₇ may be bonded to each other to form a ring, or two of R _{8 to} R ₁₀ may be bonded to each other to form a ring.
2. The positive resist composition according to claim 1, further comprising (C) a fluorine-based and / or silicon-based surfactant.
3. The positive resist composition according to claim 1, further comprising (D) an organic basic compound.
4. A pattern forming method, comprising: forming a resist film from the positive resist composition according to claim 1, exposing and developing the resist film.