JP5393325B2 - Positive resist composition and pattern forming method using the same - Google Patents

Description

  The present invention relates to a positive resist composition and a pattern forming method using the same that are suitably used in an ultramicrolithography process such as the manufacture of VLSI and high-capacity microchips and other photofabrication processes. More specifically, the present invention relates to a positive resist composition capable of forming a high-definition pattern using KrF excimer laser light, electron beam, EUV light, and the like, and a pattern forming method using the same. KrF excimer laser light The present invention relates to a positive resist composition that can be suitably used for microfabrication of a semiconductor device using electron beam or EUV light, and a pattern forming method using the same.

  Conventionally, in the manufacturing process of semiconductor devices such as IC and LSI, fine processing by lithography using a photoresist composition has been performed. In recent years, with the high integration of integrated circuits, the formation of ultrafine patterns in the submicron region, and in the electron beam and EUV regions from 20 nm to 50 nm has been required. Along with this, there is a tendency to shorten the exposure wavelength from g-line to i-line, and further to KrF excimer laser light. Furthermore, at present, in addition to excimer laser light, lithography using electron beams, X-rays, or EUV light is being developed.

In lithography using KrF excimer laser light, in recent years, there has been a movement to change the process of pattern formation using shorter-wave ArF excimer laser light to KrF for the purpose of reducing manufacturing costs. Factor (MEEF) performance is an issue. The MEEF performance indicates a change amount of the hole size with respect to an error of the mask dimension. When this value is large, the manufacturing cost of the mask is very high and the yield of manufacturing the device is reduced.
Lithography using an electron beam or EUV light is positioned as a next-generation or next-generation pattern forming technique, and a resist composition with high sensitivity and high resolution is desired. In particular, high sensitivity is a very important issue in order to shorten the wafer processing time. However, in the positive resist composition for electron beams and EUV, if high sensitivity is to be pursued, only a decrease in resolution will occur. However, the line edge roughness (LWR) deteriorates, and development of a resist composition that satisfies these characteristics is strongly desired. High sensitivity, high resolution, and good LWR are in a trade-off relationship, and it is very important how to satisfy this simultaneously.

Furthermore, in the case of ultrafine patterns in the sub-micron region for KrF and in the range of 20 nm to 50 nm for electron beams and EUV, even if the defects are sub-micron order or smaller, these defects are present when etching using this resist pattern as a mask. Is transferred and the electrical characteristics are remarkably deteriorated, resulting in a decrease in yield. Therefore, it is very important as the performance of the resist composition that there are few development defects.
As a resist composition suitable for the lithography process using these KrF excimer laser light, electron beam, or EUV light, a chemically amplified resist composition using an acid-catalyzed reaction is mainly used from the viewpoint of high sensitivity. In the positive resist composition, the chemical amplification is composed of a phenolic polymer and an acid generator, which are insoluble or hardly soluble in an alkaline developer and soluble in an alkaline developer by the action of an acid. Type resist compositions are effectively used.

With respect to resist compositions for electron beams or X-rays, the resist technology for KrF excimer laser has been mainly used so far. For example, Patent Document 1 discloses a combination of a compound that generates an acid upon electron beam irradiation and an amine compound having a boiling point of 250 ° C. or lower, and Patent Document 2 further includes a polymer having an acid-decomposable group, an acid generator, and electron beam sensitization. Combinations of agents are disclosed.
Patent Document 3 discloses a polymer for EUV having a lactone group, Patent Document 4 discloses a lactone group-containing polymer for ArF reflow use, and Patent Document 5 discloses a lactone group having a cyano group. Discloses a lactone-containing compound.
However, none of these improvement attempts satisfy the exposure dose dependency (EL), focus margin (DOF) performance, shape, mask error enhancement factor (MEEF) performance, and low development defect at the same time. Is the current situation.

JP 2000-181065 A European Patent No. 0919867 JP 2003-345023 A JP 2005-352466 A JP 2007-156450 A JP 2008-31298 A

  The problems to be solved by the present invention are sensitivity, low development defect, exposure dose dependency (EL), focus margin (DOF) performance, shape, mask error enhancement factor (MEEF) performance, low development defect, It is an object of the present invention to provide a positive resist composition with improved resolution and line width roughness (LWR) and a pattern forming method using the same.

一般式（ＩＩａ）において、
Ｖはラクトン構造を有する基を表す。
Ｂ ₂ は、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
ｎは、繰り返し数を表し、１〜５の整数を表す。
Ｚは、単結合、エーテル結合、エステル結合、アミド結合、ウレタン結合又はウレア結合を表し、複数個ある場合は同じでも異なっていてもよい。
Ｒ ₂ は、アルキレン基を表し、複数個ある場合は同じでも異なっていてもよい。
一般式（ＩＩＩａ）において、
Ｓ ₁ は、任意の置換基を表し、複数ある場合は同じでも異なっていてもよい。
Ｂ ₁ は、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
ｍは、置換基数であって、０〜４の整数を表す。
一般式（Ａ１）に於いて、
ｎは、1〜３の整数を示す。ｍは、０〜３の整数を示す。但し、ｍ＋ｎ≦５である。
Ａ ₁ は、酸の作用により脱離する基又は酸の作用により分解する基を有する基を表す。
Ｓ ₁ は、任意の置換基を表し、複数ある場合は同じでも異なっていてもよい。
Ｂ ₁ は、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
〔２〕
前記樹脂（Ａ）が有する前記一般式（ＩＩＩａ）で表される繰り返し単位が、下記式（ＩＩＩｂ）で表される繰り返し単位であることを特徴とする〔１〕に記載のポジ型レジスト組成物。

〔３〕
前記樹脂（Ａ）が有する前記一般式（ＩＩＩａ）で表される繰り返し単位が、下記式（ＩＩＩｃ）で表される繰り返し単位であることを特徴とする〔１〕に記載のポジ型レジスト組成物。

〔４〕
前記樹脂（Ａ）が有する前記一般式（ＩＩａ）で表される基を含む繰り返し単位が、下記一般式（ＩＩｂ）で表される繰り返し単位であることを特徴とする〔１〕〜〔３〕のいずれかに記載のポジ型レジスト組成物。

一般式（ＩＩｂ）において、
Ｂ ₂ は、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
Ｒ ₂ は、アルキレン基を表し、複数個ある場合は同じでも異なっていてもよい。
Ｒ ₃ は、アルキル基又はシクロアルキル基を表し、複数個ある場合は同じでも異なっていてもよく、複数個ある場合には２つのＲ ₃ が結合し、環を形成していても良い。
Ｘは、アルキレン基、酸素原子又は硫黄原子を表す。
Ｙは、電子求引性基を表し、複数個ある場合は同じでも異なっていてもよい。
Ｚは、単結合、エーテル結合、エステル結合、アミド結合、ウレタン結合又はウレア結合を表し、複数個ある場合は同じでも異なっていてもよい。
ｋは、置換基数であって、０〜８の整数を表す。
ｎは、繰り返し数を表し、１〜５の整数を表す。
ｍは、置換基数であって、１〜７の整数を表す。
〔５〕
前記樹脂（Ａ）が有する前記一般式（ＩＩａ）で表される基を含む繰り返し単位が、下記一般式（ＩＩｃ）で表される繰り返し単位であることを特徴とする〔１〕〜〔４〕のいずれかに記載のポジ型レジスト組成物。

一般式（ＩＩｃ）において、
Ｂ ₂ は、水素原子、アルキル基、水酸基、アルコキシ基、ハロゲン原子、シアノ基、ニトロ基、アシル基、アシロキシ基、シクロアルキル基、アリール基、カルボキシル基、アルキルオキシカルボニル基、アルキルカルボニルオキシ基又はアラルキル基を表す。
Ｒ ₃ は、アルキル基又はシクロアルキル基を表し、複数個ある場合は同じでも異なっていてもよく、複数個ある場合には２つのＲ ₃ が結合し、環を形成していても良い。
Ｘは、アルキレン基、酸素原子又は硫黄原子を表す。
ｋは、置換基数であって、０〜８の整数を表す。
ｐは、繰り返し数を表し、１〜５の整数を表す。
ｎは、繰り返し数を表し、１〜５の整数を表す。
ｍは、置換基数であって、１〜７の整数を表す。
〔６〕
前記化合物（Ｂ）として、トリアリールスルホニウム塩、ジアゾジスルホン誘導体及び有機スルホン酸のオキシムエステルから選ばれる少なくとも１種類の化合物を含有することを特徴とする〔１〕〜〔５〕のいずれかに記載のポジ型レジスト組成物。
〔７〕
前記化合物（Ｂ）として、トリアリールスルホニウム塩から選ばれる少なくとも１種類の化合物、並びにジアゾジスルホン誘導体及び有機スルホン酸のオキシムエステルから選ばれる少なくとも１種類の化合物を含有することを特徴とする〔１〕〜〔６〕のいずれかに記載のポジ型レジスト組成物。
〔８〕
〔１〕〜〔７〕のいずれかに記載のポジ型レジスト組成物により形成されるレジスト膜。
〔９〕
〔８〕に記載のレジスト膜を露光、現像する工程を含むことを特徴とするパターン形成方法。
本発明は、上記〔１〕〜〔９〕に関するものであるが、以下、その他の事項についても記載した。 The problem is solved by the following configuration.
[1]
(A) a resin that is decomposed by the action of an acid and has increased solubility in an alkaline developer;
A resin containing (B) a compound capable of generating an acid upon irradiation with actinic rays or radiation and having the solubility in an alkaline developer increased by the action of the acid (A) is represented by the following general formula (IIa) A positive resist composition comprising a repeating unit containing a group represented by formula (II), a repeating unit represented by the following general formula (IIIa), and a repeating unit represented by the following general formula (A1).

In general formula (IIa):
V represents a group having a lactone structure.
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
n represents the number of repetitions and represents an integer of 1 to 5.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
In general formula (IIIa):
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
m is the number of substituents and represents an integer of 0 to 4.
In general formula (A1),
n represents an integer of 1 to 3. m shows the integer of 0-3. However, m + n ≦ 5.
A ₁ represents a group having a group capable of leaving by the action of an acid or a group decomposing by the action of an acid.
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
[2]
The positive resist composition as described in [1], wherein the repeating unit represented by the general formula (IIIa) of the resin (A) is a repeating unit represented by the following formula (IIIb): .

[3]
The positive resist composition as described in [1], wherein the repeating unit represented by the general formula (IIIa) of the resin (A) is a repeating unit represented by the following formula (IIIc): .

[4]
The repeating unit containing a group represented by the general formula (IIa) of the resin (A) is a repeating unit represented by the following general formula (IIb) [1] to [3] The positive resist composition according to any one of the above.

In general formula (IIb):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
Y represents an electron withdrawing group, and when there are a plurality of groups, they may be the same or different.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
k is the number of substituents and represents an integer of 0 to 8.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7.
[5]
The repeating unit containing a group represented by the general formula (IIa) of the resin (A) is a repeating unit represented by the following general formula (IIc) [1] to [4] The positive resist composition according to any one of the above.

In general formula (IIc):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
k is the number of substituents and represents an integer of 0 to 8.
p represents the number of repetitions and represents an integer of 1 to 5.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7.
[6]
The compound (B) contains at least one compound selected from triarylsulfonium salts, diazodisulfone derivatives, and oxime esters of organic sulfonic acids, according to any one of [1] to [5] A positive resist composition.
[7]
The compound (B) contains at least one compound selected from triarylsulfonium salts, and at least one compound selected from diazodisulfone derivatives and oxime esters of organic sulfonic acids [1] To [6] The positive resist composition according to any one of [6].
[8]
A resist film formed from the positive resist composition according to any one of [1] to [7].
[9]
The pattern formation method characterized by including the process of exposing and developing the resist film as described in [8].
The present invention relates to the above [1] to [9], but other matters are also described below.

(1) (A) a resin that is decomposed by the action of an acid and has increased solubility in an alkaline developer;
(B) a compound that generates an acid upon irradiation with actinic rays or radiation,
A resin containing a group represented by the following general formula (II), wherein the resin (A) is decomposed by the action of an acid and has increased solubility in an alkaline developer: And a repeating unit represented by the following general formula (A1).

In general formula (II):
V represents a group having a lactone structure.
n represents the number of repetitions and represents an integer of 1 to 5.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
In general formula (IIIa):
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
m is the number of substituents and represents an integer of 0 to 4.
In general formula (A1),
n represents an integer of 1 to 3. m shows the integer of 0-3. However, m + n ≦ 5.
A ₁ represents a group having a group capable of leaving by the action of an acid or a group decomposing by the action of an acid.
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
(2) The positive type according to (1), wherein the repeating unit represented by the general formula (IIIa) of the resin (A) is a repeating unit represented by the following formula (IIIb): Resist composition.

  (3) The repeating unit containing a group represented by the general formula (II) of the resin (A) is a repeating unit represented by the following general formula (IIa) (1) or The positive resist composition as described in (2).

In general formula (IIa):
V represents a group having a lactone structure.
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
n represents the number of repetitions and represents an integer of 1 to 5.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
(4) The repeating unit containing a group represented by the general formula (II) of the resin (A) is a repeating unit represented by the following general formula (IIb): The positive resist composition according to any one of (3).

In general formula (IIb):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
Y represents an electron withdrawing group, and when there are a plurality of groups, they may be the same or different.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
k is the number of substituents and represents an integer of 0 to 8.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7.
(5) The repeating unit containing a group represented by the general formula (II) of the resin (A) is a repeating unit represented by the following general formula (IIc): The positive resist composition according to any one of (4).

In general formula (IIc):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
k is the number of substituents and represents an integer of 0 to 8.
p represents the number of repetitions and represents an integer of 1 to 5.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7.
(6) The compound (B) contains at least one compound selected from a triarylsulfonium salt, a diazodisulfone derivative, and an oxime ester of an organic sulfonic acid. A positive resist composition as described above.
(7) The compound (B) contains at least one compound selected from triarylsulfonium salts, and at least one compound selected from diazodisulfone derivatives and oxime esters of organic sulfonic acids. The positive resist composition according to any one of (1) to (6).
(8) A pattern forming method comprising a step of forming a resist film from the positive resist composition according to any one of (1) to (7), and exposing and developing the resist film.

  Hereinafter, more preferred embodiments of the present invention will be described.

  (9) The positive resist composition as described in any one of (1) to (7), further comprising (C) an organic basic compound and (D) a solvent.

  (10) (D) As a solvent, propylene glycol monomethyl ether acetate, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, ethyl lactate, methoxymethyl propionate, ethoxyethyl propionate, The positive resist composition as described in (9), which contains at least one solvent selected from γ-butyrolactone and propylene carbonate.

  (11) The positive type as described in (9) or (10), wherein the organic basic compound includes an organic basic compound represented by the following general formula (C3) or (C4): Resist composition.

In general formula (C3),
Sa, Sb and Sc each independently represent an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Sa and Sb may be bonded to each other to form a ring.

In general formula (C4),
Sd, Se, Sf and Sg each independently represents an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Sd and Se may be bonded to each other to form a ring.

  The preferred embodiments of the present invention will be further described below.

(12) A ₁ in the repeating unit represented by the general formula (A1) is a group represented by —C (L ₁ ) (L ₂ ) —O—Z ² (forms a ketal group or an acetal group). The positive resist composition according to any one of (1) to (7) and (9) to (11).
Here, L ₁ and L ₂ may be the same or different and each represents an atom or group selected from a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group.
Z ² represents an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group.
Z ² and L ₁ may be bonded to each other to form a 5- or 6-membered ring.

  (13) The positive resist composition as described in any one of (1) to (7) and (9) to (12), which further contains a surfactant.

  (14) The positive resist composition as described in any one of (1) to (7) and (9) to (13), which further contains an antioxidant.

  (15) The positive resist composition as described in any one of (1) to (7) and (9) to (14), which is exposed by irradiation with KrF, electron beam, X-ray or EUV .

  (16) A pattern forming method comprising a step of forming a resist film with the positive resist composition according to any one of (9) to (15), exposing and developing the resist film.

  According to the present invention, exposure dose dependency (EL), focus margin (DOF) performance, shape, mask error enhancement factor (MEEF) performance, low development defects, and further sensitivity, resolution, and line width roughness (LWR) are excellent. A positive resist composition and a pattern forming method using the same can be provided.

Hereinafter, the best mode for carrying out the present invention will be described.
In addition, in the description of the group (atomic group) in this specification, the description which does not describe substitution and non-substitution includes the thing which has a substituent with the thing which does not have a substituent. . For example, the “alkyl group” includes not only an alkyl group having no substituent (unsubstituted alkyl group) but also an alkyl group having a substituent (substituted alkyl group).

[(A) Resin that is decomposed by the action of an acid to increase the solubility in an alkaline developer]
The positive resist composition of the present invention contains a resin (hereinafter also referred to as “resin (A)”) that is decomposed by the action of an acid to increase the solubility in an alkaline developer.
The resin (A) preferably has a repeating unit having a group (hereinafter, also referred to as “acid-decomposable group”) that is decomposed by the action of an acid to generate a group having high solubility in an alkali developer.

Examples of the acid-decomposable group include a group in which a hydrogen atom of an alkali-soluble group such as a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group, or a thiol group is protected with a group capable of leaving by the action of an acid. .
Examples of the group capable of leaving by the action of an acid include —C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), —C (R ₃₆ ) (R ₃₇ ) (OR ₃₉ ), —C (═O) — _{O-C (R 36) (} R 37) (R 38), - C (R 01) (R 02) (OR 39), - C (R 01) (R 02) -C (= O) -O- C (R ₃₆ ) (R ₃₇ ) (R ₃₈ ), —CH (R ₃₆ ) (Ar) and the like can be mentioned.
In the formula, R _{36 to} R ₃₉ each independently represents an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, or an alkenyl group. R ₃₆ and R ₃₇ may be bonded to each other to form a ring.

R _{01 and} R ₀₂ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group or an alkenyl group.
Ar represents an aryl group.
The alkyl group of R _{36 to} R ₃₉ , R ₀₁ and R ₀₂ is preferably an alkyl group having 1 to 8 carbon atoms, such as methyl group, ethyl group, propyl group, n-butyl group, sec-butyl group, hexyl. Group, octyl group and the like.
The cycloalkyl group of R _{36 to} R ₃₉ , R ₀₁ and R ₀₂ may be monocyclic or polycyclic. The monocyclic type is preferably a cycloalkyl group having 3 to 8 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. As the polycyclic type, a cycloalkyl group having 6 to 20 carbon atoms is preferable. Group, androstanyl group and the like. A part of carbon atoms in the cycloalkyl group may be substituted with a hetero atom such as an oxygen atom.

The aryl group of R _{36 to} R ₃₉ , R ₀₁ , R ₀₂ and Ar is preferably an aryl group having 6 to 10 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.
The aralkyl group of R _{36 to} R ₃₉ , R ₀₁ and R ₀₂ is preferably an aralkyl group having 7 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, and a naphthylmethyl group.
The alkenyl group of R _{36 to} R ₃₉ , R ₀₁ and R ₀₂ is preferably an alkenyl group having 2 to 8 carbon atoms, and examples thereof include a vinyl group, an allyl group, a butenyl group, and a cyclohexenyl group.

The ring formed by combining R ₃₆ and R ₃₇ with each other may be monocyclic or polycyclic. The monocyclic type is preferably a cycloalkane structure having 3 to 8 carbon atoms, and examples thereof include a cyclopropane structure, a cyclobutane structure, a cyclopentane structure, a cyclohexane structure, a cycloheptane structure, and a cyclooctane structure. As the polycyclic type, a cycloalkane structure having 6 to 20 carbon atoms is preferable, and examples thereof include an adamantane structure, a norbornane structure, a dicyclopentane structure, a tricyclodecane structure, and a tetracyclododecane structure. In addition, a part of carbon atoms in the cycloalkane structure may be substituted with a heteroatom such as an oxygen atom.
R _{36 to} R ₃₉ , R ₀₁ , R ₀₂ and Ar may have a substituent. Examples of the substituent that R _{36 to} R ₃₉ , R ₀₁ , R ₀₂ and Ar may have include, for example, an alkyl group, a cycloalkyl group, an aryl group, an amino group, an amide group, a ureido group, a urethane group, a hydroxyl group Group, carboxyl group, halogen atom, alkoxy group, thioether group, acyl group, acyloxy group, alkoxycarbonyl group, cyano group, nitro group and the like.

  The acid-decomposable group is decomposed by the action of an acid to produce an alkali-soluble group such as a carboxyl group, a phenolic hydroxyl group, a sulfonic acid group, or a thiol group, and the solubility in an alkali developer is increased.

The content of the repeating unit having an acid-decomposable group is preferably 5 to 60 mol%, more preferably 10 to 50 mol%, and particularly preferably 15 to 40 mol% in all repeating units constituting the resin (A). It is.
The repeating unit having an acid-decomposable group is preferably a repeating unit represented by the general formula (A1) described later.

  The resin (A) has a repeating unit containing a group represented by the following general formula (II).

In general formula (II):
V represents a group having a lactone structure.
n represents the number of repetitions and represents an integer of 1 to 5.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
The lactone structure in the group having a lactone structure as V is directly bonded to the bond as Z.

n is preferably an integer of 1 to 2, more preferably 1.
As the alkylene group represented by R ₂ , a chain alkylene group or a cyclic alkylene group is preferable, and a preferable chain alkylene group is preferably a chain alkylene having 1 to 10 carbon atoms, more preferably 1 to 1 carbon atoms. 5, for example, methylene group, ethylene group, propylene group and the like. Preferable cyclic alkylene is C1-C20 cyclic alkylene, for example, cyclohexylene, cyclopentylene, norbornylene, adamantylene, etc. are mentioned. The group represented by R ₂ is preferably a chain alkylene.

The alkylene group represented by R ₂ can have a substituent. Examples of the substituent include halogen atoms such as fluorine atom, chlorine atom and bromine atom, mercapto group, hydroxy group, methoxy group, ethoxy group, isopropoxy group, t-butoxy group, alkoxy group such as benzyloxy group, methyl group, etc. , Ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, t-butyl group, pentyl group, hexyl group and other alkyl groups, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl group, cycloheptyl group and other cycloalkyl groups And cyano group, nitro group, sulfonyl group, silyl group, ester group, acyl group, vinyl group, aryl group and the like. When n is 2 or more, the groups represented by R ₂ may be independently the same or different.

  The group represented by Z includes a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, more preferably a single bond, an ether bond or an ester bond, particularly preferably. An ester bond.

  As the group having a lactone structure represented by V, any group having a lactone structure can be used. However, a 5- to 7-membered ring lactone structure is preferable, and a bicyclo lactone structure is added to the bicyclic lactone structure. A structure in which another ring structure is condensed to form a structure or a spiro structure is preferable. It is more preferable to have a repeating unit having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-16). Preferred lactone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), (LC1-14), and a specific lactone structure is used. As a result, LWR and development defects are improved.

The lactone structure portions of the general formulas (LC1-1) to (LC1-16) may or may not have a substituent (Rb ₂ ). Preferred substituents (Rb ₂ ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, and a carboxyl group. , Halogen atom, hydroxyl group, cyano group, acid-decomposable group and the like. More preferably, it is a C1-C4 alkyl group, a cyano group, or an acid-decomposable group.
n ₂ represents an integer of 0-4. When n ₂ is 2 or more, a plurality of substituents (Rb ₂ ) may be the same or different, and a plurality of substituents (Rb ₂ ) may be bonded to form a ring.

  The lactone structure moiety usually has an optical isomer, but any optical isomer may be used. One optical isomer may be used alone, or a plurality of optical isomers may be mixed and used. When one kind of optical isomer is mainly used, the optical purity (ee) thereof is preferably 90 or more, more preferably 95 or more.

  The repeating unit containing a group represented by the general formula (II) includes (meth) acrylic acid ester derivatives, (meth) acrylamide derivatives, vinyl ether derivatives, olefin derivatives, styrene having a structure represented by the general formula (II) The repeating unit which has a derivative etc. is mentioned, Preferably it is a repeating unit which has a (meth) acrylic acid ester derivative which has a structure of general formula (II).

  The content of the repeating unit containing a group represented by the general formula (II) is preferably 15 to 60 mol%, more preferably 20 to 50 mol%, still more preferably 30 with respect to all repeating units in the resin (A). -50 mol%.

  As the repeating unit containing a group represented by the general formula (II), a repeating unit represented by the following general formula (IIa) is preferable.

In general formula (IIa):
V represents a group having a lactone structure.
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
n represents the number of repetitions and represents an integer of 1 to 5.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.

As the alkyl group for B ₂ , an alkyl group having 1 to 5 carbon atoms is preferable, and a methyl group is more preferable. The alkyl group may have a substituent. Preferred substituents on the alkyl group include a halogen atom, a hydroxyl group, a methoxy group, an ethoxy group, an isopropoxy group, a t-butoxy group, an alkoxy group such as a benzyloxy group, and the like.
More preferable groups for B ₂ are a hydrogen atom, an alkyl group, a hydroxymethyl group, and a trifluoromethyl group. More preferred are a hydrogen atom and an alkyl group, and particularly preferred are a hydrogen atom and a methyl group.

In the general formula _{(IIa), R 2, Z} , specific examples and preferred ranges of n are in the formula _(II), is the same as R 2, Z, n.

  As the repeating unit containing a group represented by the general formula (II), a repeating unit represented by the following general formula (IIb) is more preferable.

In general formula (IIb):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
Y represents an electron withdrawing group, and when there are a plurality of groups, they may be the same or different.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
k is the number of substituents and represents an integer of 0 to 8.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7.

Formula (IIb) in _at, R 2, Z, n, specific examples and preferred ranges of _{B 2} is in the general formula _(IIa), the same as the R 2, Z, n.

The alkyl group represented by R ₃ preferably has 1 to 30 carbon atoms, more preferably a linear alkyl group or branched alkyl group having 1 to 15 carbon atoms. Specifically, methyl group, ethyl group, n-propyl group, n-butyl group, n-pentyl group, n-hexyl group, n-octyl group, n-dodecyl group, n-tetradecyl group, n-octadecyl group, etc. And a branched alkyl group such as isopropyl group, isopropyl group, isobutyl group, t-butyl group, neopentyl group, 2-ethylhexyl group.
The cycloalkyl group as R ₃ is preferably a cycloalkyl group having 3 to 20 carbon atoms, may be polycyclic, and may have an oxygen atom in the ring. Specific examples include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, an adamantyl group, and the like.
The alkyl group and cycloalkyl group of R ₃ may have a substituent. Examples of the substituent on the alkyl group and cycloalkyl group include halogen atoms such as fluorine atom, chlorine atom and bromine atom, mercapto group, hydroxy group, methoxy group, ethoxy group, isopropoxy group, t-butoxy group, and benzyl. Alkoxy groups such as oxy groups, methyl groups, ethyl groups, propyl groups, isopropyl groups, butyl groups, sec-butyl groups, t-butyl groups, pentyl groups, hexyl groups and other alkyl groups, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl Group, cycloalkyl group such as cycloheptyl group, and cyano group, nitro group, sulfonyl group, silyl group, ester group, acyl group, vinyl group, aryl group and the like. In the case where there are a plurality of groups, two R ₃ groups may be bonded to form a ring (preferably a cycloalkylene group).

  X represents an alkylene group, an oxygen atom, or a sulfur atom. As an alkylene group, a C1-C2 alkylene group is preferable and a methylene group, ethylene group, etc. are mentioned. Examples of the substituent on the alkylene group include halogen atoms such as fluorine atom, chlorine atom and bromine atom, mercapto group, hydroxy group, methoxy group, ethoxy group, isopropoxy group, t-butoxy group and benzyloxy group. Alkoxy groups such as alkoxy group, methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, t-butyl group, pentyl group, hexyl group, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl group, cycloheptyl And a cycloalkyl group such as a group, and a cyano group, a nitro group, a sulfonyl group, a silyl group, an ester group, an acyl group, a vinyl group, and an aryl group.

  Examples of the electron withdrawing group for Y include a cyano group, a nitro group, a carboxyl group, a hydroxy group, an alkoxy group which may have a substituent, and a halogenated alkyl group. The alkoxy group is preferably an alkoxy group having 1 to 10 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, an isopropoxy group, a t-butoxy group, and a benzyloxy group. Examples of the substituent on the alkoxy group include halogen atoms such as fluorine atom, chlorine atom and bromine atom, mercapto group, hydroxy group, methoxy group, ethoxy group, isopropoxy group, t-butoxy group and benzyloxy group. Alkoxy groups such as alkoxy group, methyl group, ethyl group, propyl group, isopropyl group, butyl group, sec-butyl group, t-butyl group, pentyl group, hexyl group, cyclopropyl, cyclobutyl, cyclopentyl, cyclohexyl group, cycloheptyl And a cycloalkyl group such as a group, and a cyano group, a nitro group, a sulfonyl group, a silyl group, an ester group, an acyl group, a vinyl group, and an aryl group. Preferred Y is a cyano group, nitro group, hydroxy group, halogenated alkyl group, and particularly preferred Y is a cyano group.

  The group represented by Z includes a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, more preferably a single bond, an ether bond or an ester bond, particularly preferably. An ester bond. Z may be located on either the end side or the exo side of the norbornane skeleton.

  k is the number of substituents and represents an integer of 0 to 8, more preferably 0 to 5, particularly preferably 0 to 3. m is the number of substituents and represents an integer of 1 to 7. More preferably, it is 1-5, Most preferably, it is 1-3.

  As the repeating unit containing a group represented by the general formula (II), a repeating unit represented by the following general formula (IIc) is more preferable.

In general formula (IIc):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
k is the number of substituents and represents an integer of 0 to 8.
p represents the number of repetitions and represents an integer of 1 to 5.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7.

In the general formula _{(IIc), R 2, R} 3, n, k, and specific examples and preferred ranges of _{B 2} is in the general formula _{(IIb), R 2, R} 3, n, k, B 2 It is the same.

  It is particularly preferable from the viewpoint of developability that the repeating unit having a group having a lactone structure is ± 20 mol% of the molar ratio (mol%) of the acid-decomposable repeating unit.

  Although the specific example of the repeating unit containing group represented by general formula (II) below is shown, this invention is not limited to this.

In the structure _{B 2} is the same as in _{B 2} in the general formula (IIa).

In the above structural formula, Ac represents an acetyl group.
The resin (A) has a repeating unit containing a group represented by the general formula (II) and a repeating unit represented by the following general formula (IIIa).

In general formula (IIIa):
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
m is the number of substituents and represents an integer of 0 to 4.

  The repeating unit represented by the general formula (IIIa) is preferably a repeating unit represented by the following formula (IIIa ′).

  The repeating unit represented by the general formula (IIIa) is preferably a repeating unit represented by the following formula (IIIb).

  The content of the repeating unit represented by the general formula (IIIa) is preferably 10 to 70 mol%, more preferably 20 to 60 mol%, based on all repeating units in the resin (A). More preferably, it is 25-55 mol%.

  Resin (A) has a repeating unit represented by the following general formula (A1) as a repeating unit having an acid-decomposable group.

In general formula (A1),
n represents an integer of 1 to 3. m shows the integer of 0-3. However, m + n ≦ 5.
A ₁ represents a group having a group capable of leaving by the action of an acid or a group decomposing by the action of an acid.
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
S ₁ and B ₁ in the general formula (A1) may be the same as or different from S ₁ and B ₁ in the general formula (IIIa).

Formula (A1), an alkyloxycarbonyl group of the alkyl group and B ₁ of B _1, in the alkyl group in the alkylcarbonyloxy group is preferably a linear or branched alkyl group having 1 to 5 carbon atoms, for example, Examples include methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, t-butyl group, pentyl group, isopentyl group, neopentyl group, and t-pentyl group. it can.
The alkoxy group of B ₁ is preferably an alkoxy group having 1 to 5 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, a propoxy group, and an n-butoxy group.
In the acyl group in the acyloxy group of the acyl group and B ₁ of B _1, preferably 1-8C acyl group carbons, such as formyl group, acetyl group, propionyl group, butyryl group, valeryl group, pivaloyl group, A benzoyl group etc. can be mentioned.
The cycloalkyl group represented by B ₁ is preferably a monocyclic or polycyclic cycloalkyl group having 3 to 15 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, a cyclopentyl group, a cyclohexyl group, a norbornyl group, an adamantyl group, and the like. Can do.
The aryl group of B ₁ is preferably an aryl group having 6 to 18 carbon atoms, and examples thereof include a phenyl group, a naphthyl group, and an anthryl group.
The aralkyl group of B ₁ is preferably an aralkyl group having 7 to 12 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, and a naphthylmethyl group.
B ₁ is preferably a hydrogen atom or a methyl group.

Examples of the group capable of leaving by the action of an acid A ₁ include the same groups as those mentioned above for the action of an acid in the acid-decomposable group, such as a t-butyl group, t-butyl group, A tertiary alkyl group such as an amyl group, a t-butoxycarbonyl group, a t-butoxycarbonylmethyl group, a group represented by —C (L ₁ ) (L ₂ ) —O—Z ² (forms a ketal group or an acetal group) ) Is preferred.
L ₁ and L ₂ may be the same or different and each represents an atom or group selected from a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group.
Z ² represents an alkyl group, a cycloalkyl group, an aryl group, or an aralkyl group.
Z ² and L ₁ may be bonded to each other to form a 5- or 6-membered ring.
Examples of the 5- or 6-membered ring formed by combining Z ² and L ₁ with each other include a tetrahydropyran ring and a tetrahydrofuran ring.
Examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group in L ₁ , L ₂ and Z ² are the same as the alkyl group, cycloalkyl group, aryl group and aralkyl group in B ₁ .
Examples of the group having a group decomposable by the action of an acid A ₁ include an alkyl group, a cycloalkyl group, and an aryl group having an acid-decomposable group.

A ₁ is preferably a group represented by —C (L ₁ ) (L ₂ ) —O—Z ² (forms a ketal group or an acetal group).

Examples of the optional substituent of S ₁ include a halogen atom, an alkyl group, a cycloalkyl group, an aryl group, an aralkyl group, an alkoxy group, an acyl group, —OC (═O) Rf, —OC (═O) ORf, -C (= O) ORf, -C (= O) N (Rg) Rf, -N (Rg) C (= O) Rf, -N (Rg) C (= O) ORf, -N (Rg) SO ₂ Rf, —SRf, —SO ₂ Rf, —SO ₃ Rf or —SO ₂ N (Rg) Rf may be mentioned. In the formula, Rf and Rg are each independently a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyl An oxycarbonyl group, an alkylcarbonyloxy group or an aralkyl group is represented.
The alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group and acyl group in S ₁ are the same as the alkyl group, cycloalkyl group, aryl group, aralkyl group, alkoxy group and acyl group in B _1. Things.
Examples of the halogen atom in S ₁ include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferable.
Examples of the alkyl group, alkoxy group, acyl group, cycloalkyl group, aryl group, and aralkyl group in Rf and Rg are the same as those in B ₁ .
Examples of the acyl group in the acyloxy group of Rf and Rg can be the same as the acyl group in B ₁ .
Examples of the alkyl group contained in the alkyloxycarbonyl group and alkylcarbonyloxy group of Rf and Rg include the same alkyl groups as in B ₁ .
When there are a plurality of S _{1 s} , each independently represents an arbitrary substituent.

  Specific examples of the repeating unit represented by the general formula (A1) are given, but the invention is not limited thereto.

  The resin (A) may have a repeating unit represented by the following general formula (A2) as a repeating unit having an acid-decomposable group.

In general formula (A2),
A ₂ represents a group having a group capable of leaving by the action of an acid or a group decomposing by the action of an acid.
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.

In the general formula (A2), examples of the group capable of leaving by the action of an acid A ₂ include the same groups as those mentioned above for the acid-decomposable group. It is preferably a hydrocarbon group.
The hydrocarbon group is preferably a group having an alkyl group or a cycloalkyl group, an aryl group or a group having an aralkyl group, more preferably a group having an alkyl group or a cycloalkyl group, and still more preferably an alkyl group. It is group which has. Examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group in A ₂ are the same as those in the group capable of leaving by the action of the acid.
Examples of the group having a group capable of decomposing by the action of an acid A ₂ include an alkyl group having an acid-decomposable group, a cycloalkyl group, and an aryl group.

B ₂ are those in general formula (A1) in, similar to B _1.
B ₂ is preferably a hydrogen atom or an alkyl group, and more preferably a methyl group in the case of an alkyl group.

  The general formula (A2) is preferably represented by the following general formula (A2 ′).

In general formula (A2 ′),
Rh, Rk and Rj each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Rk and Rj may be bonded to each other to form a ring.
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.

Examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group in the general formula (A2 ′), Rh, Rk and Rj are the same as those in the group leaving by the action of the acid. Can do.
The ring formed by combining Rk and Rj with each other may be monocyclic or polycyclic. The monocyclic type is preferably a cycloalkane structure having 3 to 8 carbon atoms, and examples thereof include a cyclopropane structure, a cyclobutane structure, a cyclopentane structure, a cyclohexane structure, a cycloheptane structure, and a cyclooctane structure. As the polycyclic type, a cycloalkane structure having 6 to 20 carbon atoms is preferable, and examples thereof include an adamantane structure, a norbornane structure, a dicyclopentane structure, a tricyclodecane structure, and a tetracyclododecane structure. In addition, a part of carbon atoms in the cycloalkane structure may be substituted with a heteroatom such as an oxygen atom.
Rh, Rk and Rj are preferably an alkyl group or a cycloalkyl group.
Rh is an alkyl group, and Rk and Rj are preferably bonded to each other to form a ring.
Rh is preferably a hydrogen atom, Rk is an aryl group, and Rj is preferably an alkyl group, a cycloalkyl group, or an aryl group.

In formula (A2 '), B ₂ is in the general formula (A2), and B ₂ synonymous.

  Specific examples of the repeating unit represented by formula (A2) are shown below, but the present invention is not limited thereto.

  The resin (A) may have a repeating unit represented by the following general formula (IV).

In general formula (IV),
R ₀₁ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group.
B represents a halogen atom, a cyano group, an acyl group, an alkyl group, an alkoxy group, an acyloxy group or an alkoxycarbonyl group.
p represents an integer of 0 to 5.

In the general formula (IV), R ₀₁ each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, a halogen atom, a cyano group, or an alkoxycarbonyl group, and preferably has 20 or less carbon atoms.
The alkyl group or cycloalkyl group in R ₀₁ preferably has 20 or less carbon atoms, and is a methyl group, ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group, t-butyl group, pentyl group, cyclopentyl group. Hexyl group, cyclohexyl group, octyl group, dodecyl group and the like. These groups may have a substituent, for example, alkoxy group, hydroxyl group, halogen atom, nitro group, acyl group, acyloxy group, acylamino group, sulfonylamino group, alkylthio group, arylthio group, aralkylthio group, thiophene. Examples include carbonyloxy groups, thiophenemethylcarbonyloxy groups, and heterocyclic residues such as pyrrolidone residues, and those having 8 or less carbon atoms are preferred. CF ₃ group, alkoxycarbonylmethyl group, alkylcarbonyloxymethyl group, hydroxymethyl group, alkoxymethyl group and the like are more preferable.
Examples of the halogen atom for R ₀₁ include a fluorine atom, a chlorine atom, a bromine atom and an iodine atom, and a fluorine atom is preferred.
As the alkyl group contained in the alkoxycarbonyl group in R _01, the same alkyl groups represented by R ₀₁ are preferred.

The acyl group as B in the general formula (IV) is, for example, an acyl group having 2 to 8 carbon atoms, and specifically includes formyl group, acetyl group, propanoyl group, butanoyl group, pivaloyl group, benzoyl group and the like. Can be preferably mentioned.
The alkyl group as B is, for example, an alkyl group having 1 to 8 carbon atoms, and specifically includes a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, a hexyl group, and an octyl group. Can be preferably mentioned.
The alkoxy group as B is, for example, the above alkoxy group having 1 to 8 carbon atoms, and examples thereof include a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentyloxy group, a hexyloxy group, and a cyclohexyloxy group. .
Examples of the acyloxy group or alkoxycarbonyl group as B include groups corresponding to the acyl group and alkoxy group.

B is preferably an acyloxy group or an alkoxycarbonyl group, and more preferably an acyloxy group. Among acyloxy groups (represented by the general formula —O—CO—R _A , where R _A is an alkyl group), those having 1 to 6 carbon atoms in _RA are preferred, and those having 1 to 3 carbon atoms in _RA. Are more preferable, and those in which R _A has 1 carbon atom (that is, an acetoxy group) are particularly preferable.
p represents an integer of 0 to 5, preferably 0 to 2, more preferably 1 to 2, and still more preferably 1.

  Each of the above groups may have a substituent, and preferred substituents include a hydroxyl group, a carboxyl group, a cyano group, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), an alkoxy group (methoxy group, Ethoxy group, propoxy group, butoxy group, etc.). As for the cyclic structure, examples of the substituent further include an alkyl group (preferably having 1 to 8 carbon atoms).

  Specific examples of the repeating unit represented by the general formula (IV) are shown below, but are not limited thereto.

  The resin (A) may have a repeating unit represented by the following general formula (V).

In general formula (V),
R _{a to} R _c each independently represents a hydrogen atom, a fluorine atom, a chlorine atom, a cyano group or an alkyl group.
X ₁ represents a hydrogen atom or an organic group.

In general formula (V), the alkyl group as R _{a to} R _c is preferably an alkyl group having 1 to 5 carbon atoms, and examples thereof include a methyl group, an ethyl group, and a propyl group. .

The organic group as X ₁ preferably has 1 to 40 carbon atoms and may be an acid-decomposable group or a non-acid-decomposable group.

Examples of the non-acid-decomposable group include an alkyl group, a cycloalkyl group, an alkenyl group, an aryl group, an alkyloxy group (excluding —O-tertiary alkyl), an acyl group, a cycloalkyloxy group, and an alkenyloxy. Group, aryloxy group, alkylcarbonyloxy group, alkylamidomethyloxy group, alkylamido group, arylamidomethyl group, arylamido group and the like.
The non-acid-decomposable group is preferably an acyl group, an alkylcarbonyloxy group, an alkyloxy group, a cycloalkyloxy group, an aryloxy group, an alkylamidooxy group, or an alkylamido group, more preferably an acyl group or an alkylcarbonyl group. An oxy group, an alkyloxy group, a cycloalkyloxy group, and an aryloxy group;
In the non-acid-decomposable group, the alkyl group is preferably an alkyl group having 1 to 4 carbon atoms such as a methyl group, an ethyl group, a propyl group, an n-butyl group, a sec-butyl group, or a t-butyl group. As the alkyl group, those having 3 to 10 carbon atoms such as cyclopropyl group, cyclobutyl group, cyclohexyl group and adamantyl group are preferable, and as the alkenyl group, carbon number such as vinyl group, propenyl group, allyl group and butenyl group. Those having 2 to 4 carbon atoms are preferable, those having 2 to 4 carbon atoms such as vinyl group, propenyl group, allyl group and butenyl group are preferable as alkenyl groups, and phenyl group, xylyl group and toluyl group are preferable as aryl groups. And those having 6 to 14 carbon atoms such as cumenyl group, naphthyl group and anthracenyl group are preferable. The alkoxy group is preferably an alkoxy group having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a hydroxyethoxy group, a propoxy group, a hydroxypropoxy group, an n-butoxy group, an isobutoxy group, or a sec-butoxy group.

As the organic group of the acid-decomposable group for X ₁ , for example, —C (R _11a ) (R _12a ) (R _13a ), —C (R _14a ) (R _15a ) (OR _16a ), —CO—OC ( R _11a ) (R _12a ) (R _13a ) can be mentioned.
R _{11a to} R _13a each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, an aralkyl group or an aryl group. R _14a and R _15a each independently represents a hydrogen atom or an alkyl group. R _16a represents an alkyl group, a cycloalkyl group, an alkenyl group, an aralkyl group or an aryl group. Two of R _11a , R _12a and R _13a , or two of R _14a , R _15a and R _16a may combine to form a ring.
Note that a group having an acid-decomposable group can be introduced into X ₁ by modification. In this way, X ₁ introduced with the acid decomposable group is, for example, as follows.
-[C ( _R17a ) ( _R18a )] _p- CO-OC ( _R11a ) ( _R12a ) ( _R13a ) _R17a and _R18a each independently represents a hydrogen atom or an alkyl group. p is an integer of 1 to 4.

The organic group as X ₁ is preferably an acid-decomposable group having at least one cyclic structure selected from alicyclic, aromatic and bridged alicyclic, and an aromatic group (particularly a phenyl group). Or a structure containing an alicyclic or bridged alicyclic structure represented by the following general formulas (pI) to (pVI).

In the formula, R ₁₁ represents a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group or a sec-butyl group, and Z forms an alicyclic hydrocarbon group together with a carbon atom. Represents the atomic group necessary to do.
R _{12 to} R ₁₆ each independently represents a linear or branched alkyl group or alicyclic hydrocarbon group having 1 to 4 carbon atoms, provided that at least one of R _{12 to} R ₁₄ , or Either R ₁₅ or R ₁₆ represents an alicyclic hydrocarbon group.
R _{17 to} R ₂₁ each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or an alicyclic hydrocarbon group, provided that at least one of R _{17 to} R ₂₁ Represents an alicyclic hydrocarbon group. Further, either R ₁₉ or R ₂₁ represents a linear or branched alkyl group or alicyclic hydrocarbon group having 1 to 4 carbon atoms.
R _{22 to} R ₂₅ each independently represents a hydrogen atom, a linear or branched alkyl group having 1 to 4 carbon atoms, or an alicyclic hydrocarbon group, provided that at least one of R _{22 to} R ₂₅ Represents an alicyclic hydrocarbon group. R ₂₃ and R ₂₄ may be bonded to each other to form a ring.

In the general formulas (pI) to (pVI), the alkyl group in R _{12 to} R ₂₅ may be substituted or unsubstituted, and is a linear or branched alkyl group having 1 to 4 carbon atoms. Represents. Examples of the alkyl group include a methyl group, an ethyl group, an n-propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a sec-butyl group, and a t-butyl group.
Further, the further substituent of the alkyl group includes an alkoxy group having 1 to 4 carbon atoms, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), acyl group, acyloxy group, cyano group, hydroxyl group, A carboxy group, an alkoxycarbonyl group, a nitro group, etc. can be mentioned.

The alicyclic hydrocarbon group in R _{11 to} R _{25 or} the alicyclic hydrocarbon group formed by Z and a carbon atom may be monocyclic or polycyclic. Specific examples include groups having a monocyclo, bicyclo, tricyclo, tetracyclo structure or the like having 5 or more carbon atoms. The carbon number is preferably 6-30, and particularly preferably 7-25. These alicyclic hydrocarbon groups may have a substituent.
Below, the structural example of an alicyclic part is shown among alicyclic hydrocarbon groups.

  In the present invention, preferred examples of the alicyclic moiety include adamantyl group, noradamantyl group, decalin residue, tricyclodecanyl group, tetracyclododecanyl group, norbornyl group, cedrol group, cyclohexyl group, cycloheptyl. Group, cyclooctyl group, cyclodecanyl group and cyclododecanyl group. More preferred are an adamantyl group, a decalin residue, a norbornyl group, a cedrol group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a cyclodecanyl group, and a cyclododecanyl group.

Examples of the substituent that the alicyclic hydrocarbon group may have include an alkyl group, a halogen atom, a hydroxyl group, an alkoxy group, a carboxyl group, and an alkoxycarbonyl group. The alkyl group is preferably a lower alkyl group such as a methyl group, an ethyl group, a propyl group, an isopropyl group, or a butyl group, more preferably a substituent selected from the group consisting of a methyl group, an ethyl group, a propyl group, and an isopropyl group. Can be mentioned. Examples of the alkoxy group include those having 1 to 4 carbon atoms such as a methoxy group, an ethoxy group, a propoxy group, and a butoxy group.
The alkyl group, alkoxy group, and alkoxycarbonyl group may further have a substituent. Examples of such a substituent include an alkoxy group having 1 to 4 carbon atoms (methoxy group, ethoxy group, butoxy group). Group), hydroxy group, oxo group, alkylcarbonyl group (preferably 2 to 5 carbon atoms), alkylcarbonyloxy group group (preferably 2 to 5 carbon atoms), alkoxycarbonyl group (preferably 2 to 5 carbon atoms) And halogen atoms (chlorine atom, bromine atom, fluorine atom, etc.).

The content of the repeating unit represented by the general formula (IV) is preferably 0 to 50 mol%, more preferably 5 to 40 mol%, particularly preferably 5 to 20 mol% in all repeating units constituting the resin. It is.
The content of the repeating unit represented by the general formula (V) is preferably 0 to 30 mol%, more preferably 0 to 20 mol%, and particularly preferably 0 to 10 mol% in all repeating units constituting the resin. It is.

  The resin (A) may be copolymerized with a methacrylate or acrylate having a hydrophilic group such as an alkyleneoxy group or a lactone group in order to adjust hydrophilicity / hydrophobicity. Here, the resin (A) can contain a lactone group, not in the form of the group represented by the general formula (II).

  Examples of the alkyleneoxy group include an ethyleneoxy group, a propyleneoxy group, a butyleneoxy group, and a pentyleneoxy group.

Any lactone group can be used as long as it has a lactone structure, but it is preferably a 5- to 7-membered ring lactone structure, and forms a bicyclo structure or a spiro structure in the 5- to 7-membered ring lactone structure. The other ring structure is preferably condensed. It is more preferable to have a repeating unit having a lactone structure represented by any of the following general formulas (LC1-1) to (LC1-16).
The lactone structure may be directly bonded to the main chain. Preferred lactone structures are (LC1-1), (LC1-4), (LC1-5), (LC1-6), (LC1-13), (LC1-14), and a specific lactone structure is used. As a result, line edge roughness and development defects are improved.

The lactone structure moiety may or may not have a substituent (Rb ₂ ). Preferred substituents (Rb ₂ ) include an alkyl group having 1 to 8 carbon atoms, a cycloalkyl group having 4 to 7 carbon atoms, an alkoxy group having 1 to 8 carbon atoms, an alkoxycarbonyl group having 1 to 8 carbon atoms, and a carboxyl group. , Halogen atom, hydroxyl group, cyano group, acid-decomposable group and the like. More preferably, they are a C1-C4 alkyl group, a cyano group, and an acid-decomposable group. n2 represents an integer of 0 to 4. When n2 is 2 or more, a plurality of substituents (Rb ₂ ) may be the same or different, and a plurality of substituents (Rb ₂ ) may be bonded to form a ring.

  Examples of the repeating unit having a lactone structure represented by any one of the general formulas (LC1-1) to (LC1-16) include a repeating unit represented by the following general formula (AII).

In general formula (AII),
Rb ₀ represents a hydrogen atom, a halogen atom or an alkyl group having 1 to 4 carbon atoms. Preferred substituents that the alkyl group represented by Rb ₀ may have include a hydroxyl group and a halogen atom.
Examples of the halogen atom for Rb ₀ include a fluorine atom, a chlorine atom, a bromine atom, and an iodine atom.
Rb ₀ is preferably a hydrogen atom or a methyl group.
V represents a group having a structure represented by any one of the general formulas (LC1-1) to (LC1-16).

  The repeating unit having a lactone group usually has an optical isomer, but any optical isomer may be used. One optical isomer may be used alone, or a plurality of optical isomers may be mixed and used. When one kind of optical isomer is mainly used, the optical purity (ee) thereof is preferably 90 or more, more preferably 95 or more.

  The content of the repeating unit having a lactone group is preferably from 15 to 60 mol%, more preferably from 20 to 50 mol%, still more preferably from 30 to 50 mol%, based on all repeating units in the polymer.

  Specific examples of the repeating unit having a lactone group are listed below, but the present invention is not limited thereto.

  Particularly preferred repeating units having a lactone group include the following repeating units. By selecting an optimal lactone group, the pattern profile and the density dependency are improved.

The resin (A) may have a repeating unit having a hydroxyl group or a cyano group.
The repeating unit having a hydroxyl group or a cyano group is preferably a repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group. The alicyclic hydrocarbon structure in the alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group is preferably an adamantyl group, a diamantyl group, or a norbornane group. As the alicyclic hydrocarbon structure substituted with a preferred hydroxyl group or cyano group, partial structures represented by the following general formulas (VIIa) to (VIId) are preferred.

In general formulas (VIIa) to (VIIc),
R ₂ c to R ₄ c each independently represents a hydrogen atom, a hydroxyl group or a cyano group. However, at least one of R ₂ c to R ₄ c represents a hydroxyl group or a cyano group. Preferably, one or two of R ₂ c to R ₄ c are a hydroxyl group and the remaining is a hydrogen atom. In general formula (VIIa), more preferably, _two of R ₂ c to R ₄ c are hydroxyl groups and the remaining are hydrogen atoms.

  Examples of the repeating unit having a partial structure represented by the general formulas (VIIa) to (VIId) include the repeating units represented by the following general formulas (AIIa) to (AIId).

In the general formulas (AIIa) to (AIId),
R ₁ c represents a hydrogen atom, a methyl group, a trifluoromethyl group or a hydroxymethyl group.
R ₂ c to R ₄ c are in the general formula (VIIa) ~ (VIIc), same meanings as R ₂ c~R ₄ c.

  The content of the repeating unit having an alicyclic hydrocarbon structure substituted with a hydroxyl group or a cyano group is preferably 5 to 40 mol%, more preferably 5 to 30 mol%, still more preferably 5 with respect to all repeating units in the polymer. ˜25 mol%.

  Specific examples of the repeating unit having a hydroxyl group or a cyano group are given below, but the present invention is not limited thereto.

The resin (A) preferably has a repeating unit having an alkali-soluble group.
Examples of the alkali-soluble group include a carboxyl group, a sulfonamide group, a sulfonylimide group, a bisulsulfonylimide group, and an aliphatic alcohol (for example, hexafluoroisopropanol group) substituted with an electron withdrawing group at the α-position. It is more preferable to have a repeating unit. By containing the repeating unit having an alkali-soluble group, the resolution in contact hole applications is increased. The repeating unit having an alkali-soluble group includes a repeating unit in which an alkali-soluble group is directly bonded to the main chain of the resin, such as a repeating unit of acrylic acid or methacrylic acid, or an alkali in the main chain of the resin through a linking group. Either a repeating unit to which a soluble group is bonded, or a polymerization initiator or chain transfer agent having an alkali-soluble group is used at the time of polymerization and introduced at the end of the polymer chain. Both are preferable, and the linking group is monocyclic or polycyclic. It may have a cyclic hydrocarbon structure. Particularly preferred are repeating units of acrylic acid or methacrylic acid.

  As for content of the repeating unit which has an alkali-soluble group, 1-20 mol% is preferable with respect to all the repeating units in a polymer, More preferably, it is 3-15 mol%, More preferably, it is 5-10 mol%.

  Specific examples of the repeating unit having an alkali-soluble group are shown below, but the present invention is not limited thereto.

  As the repeating unit having at least one group selected from a lactone group, a hydroxyl group, a cyano group and an alkali-soluble group, more preferably, a repeating unit having at least two groups selected from a lactone group, a hydroxyl group, a cyano group and an alkali-soluble group Preferably, it is a repeating unit having a cyano group and a lactone group. Particularly preferred is a repeating unit having a structure in which a cyano group is substituted on the lactone structure of (LCI-4).

  The resin (A) may further have a repeating unit that has an alicyclic hydrocarbon structure and does not exhibit acid decomposability. This can reduce the elution of low molecular components from the resist film to the immersion liquid during immersion exposure. Examples of such a repeating unit include 1-adamantyl (meth) acrylate, diamantyl (meth) acrylate, tricyclodecanyl (meth) acrylate, and cyclohexyl (meth) acrylate repeating units.

  In addition to the above repeating structural units, the resin (A) has dry etching resistance, standard developer suitability, substrate adhesion, resist profile, and further, resolving power, heat resistance, which are generally required for positive resist compositions, Various repeating structural units can be included for the purpose of adjusting sensitivity and the like.

  Examples of such repeating structural units include, but are not limited to, repeating structural units corresponding to the following monomers.

Thereby, the performance required for the resin (A), in particular,
(1) Solubility in coating solvent,
(2) Film formability (glass transition point),
(3) Alkali developability,
(4) Membrane slip (hydrophobic, alkali-soluble group selection),
(5) Adhesion of unexposed part to substrate,
(6) Dry etching resistance,
Etc. can be finely adjusted.

  As such a monomer, for example, a compound having one addition polymerizable unsaturated bond selected from acrylic acid esters, methacrylic acid esters, acrylamides, methacrylamides, allyl compounds, vinyl ethers, vinyl esters, etc. Etc.

  Resin (A) is, in addition, styrene (alkyl group, halogen atom, alkylthio group, sulfonyl group, ester group may be substituted), vinylnaphthalene (alkyl group, halogen atom, alkylthio group, sulfonyl group, ester group). May be substituted), vinyl anthracene (alkyl group, halogen atom, alkylthio group, sulfonyl group, ester group may be substituted), and the like may be copolymerized.

  In addition, any addition-polymerizable unsaturated compound that can be copolymerized with monomers corresponding to the above various repeating structural units may be copolymerized.

  In the resin (A), the molar ratio of each repeating structural unit is generally required for the positive resist composition for dry etching resistance, standard developer suitability, substrate adhesion, resist profile, and further for the positive resist composition. It is appropriately set in order to adjust the resolving power, heat resistance, sensitivity, etc., which are good performance.

In the case of KrF, electron beam, X-ray, EUV exposure, the resin (A) preferably has a repeating unit represented by the general formula (A2).
When used for KrF, electron beam, X-ray, EUV exposure, preferably a copolymer having hydroxystyrene repeating units protected with hydroxystyrene repeating units / acid-decomposable groups, protected with hydroxystyrene repeating units / acid-decomposing groups A copolymer having a (meth) acrylic acid ester repeating unit is preferred.

  More specifically, examples of the resin (A) include those containing units as shown in Table 1 below, but the present invention is not limited thereto.

  In Table 1 above, (IIIb) and (IIIc) described as the composition unit (III) have the following structures.

  Moreover, the said resin, especially A-1, A-4, A-8, and A-10, and the one containing any one of the following structures as the fourth unit are also included.

  The synthesis of the resin (A) is a precursor of a group that can be decomposed with an acid into an alkali-soluble resin as described in European Patent No. 254853, Japanese Patent Application Laid-Open No. 3-223860, and Japanese Patent Application Laid-Open No. 4-251259. It can be synthesized by a known synthesis method such as a method of reacting a body or a method of copolymerizing a monomer having a group decomposable with an acid with various monomers.

When the positive resist composition of the present invention is for KrF exposure, the weight average molecular weight (Mw) of the resin (A) is preferably in the range of 1,000 to 200,000, more preferably 1, The range is from 000 to 100,000, more preferably from 1,000 to 50,000, and particularly preferably from 10,000 to 30,000.
When the positive resist composition of the present invention is used for electron beam, X-ray and EUV exposure, the weight average molecular weight (Mw) of the resin (A) is preferably in the range of 1,000 to 200,000. More preferably, it is in the range of 1,000 to 100,000, more preferably in the range of 1,000 to 50,000, and particularly preferably in the range of 3,000 to 10,000.
Here, the weight average molecular weight is defined as a polystyrene conversion value of gel permeation chromatography (GPC).
The dispersity (Mw / Mn) of the resin (A) is preferably 1.0 to 3.0, more preferably 1.0 to 2.5, and still more preferably 1.0 to 2.0. is there. Resin (A) having a dispersity of 1.3 to 2.0 can be synthesized by performing radical polymerization using an azo polymerization initiator. Moreover, the resin (A) having a dispersity of 1.0 to 1.5 can be synthesized by living radical polymerization.
200,000 or less is preferable from the viewpoint of the dissolution rate and sensitivity of the resin (A) in the alkali.

The resin (A) may be used in combination of two or more kinds, or may be used in combination with a resin that decomposes by the action of another acid and increases the solubility in an alkali developer.
The total amount of the resin (A) added is generally 10 to 99% by mass, preferably 20 to 98% by mass, and particularly preferably 50 to 97% by mass with respect to the total solid content of the positive resist composition. %.

(B) Compound that generates acid upon irradiation with actinic ray or radiation The positive resist composition of the present invention is a compound that generates acid upon irradiation with actinic ray or radiation (“acid generator”, “compound (B)”). (Also called).
Examples of such an acid generator include a photoinitiator for photocationic polymerization, a photoinitiator for photoradical polymerization, a photodecolorant for dyes, a photochromic agent, or an actinic ray or radiation used for a microresist. A known compound that generates an acid by irradiation and a mixture thereof can be appropriately selected and used.

  Examples thereof include diazonium salts, phosphonium salts, sulfonium salts, iodonium salts, imide sulfonates, oxime sulfonates, diazodisulfones, disulfones, and o-nitrobenzyl sulfonates.

  Further, a group that generates an acid upon irradiation with these actinic rays or radiation, or a compound in which a compound is introduced into the main chain or side chain of the polymer, for example, US Pat. No. 3,849,137, German Patent No. 3914407. JP, 63-26653, JP, 55-164824, JP, 62-69263, JP, 63-146038, JP, 63-163452, JP, 62-153853, The compounds described in JP-A 63-146029 can be used.

  Furthermore, compounds capable of generating an acid by light described in US Pat. No. 3,779,778, European Patent 126,712 and the like can also be used.

  Among the compounds that decompose upon irradiation with actinic rays or radiation to generate an acid, compounds represented by the following general formulas (ZI), (ZII), and (ZIII) can be exemplified.

In general formula (ZI):
R ₂₀₁ , R ₂₀₂ and R ₂₀₃ each independently represents an organic group.
X ⁻ represents a non-nucleophilic anion.

X ⁻ in the general formula (ZI) is preferably a sulfonate anion, a carboxylate anion, a bis (alkylsulfonyl) amide anion, a tris (alkylsulfonyl) methide anion, BF ₄ ⁻ , PF ₆ ⁻ , SbF ₆ ^−. An organic anion containing a carbon atom is preferable.

  Preferred organic anions include organic anions represented by the following general formulas (AN1) to (AN4).

In general formulas (AN1) and (AN2):
Rc ₁ represents an organic group.

Examples of the organic group in Rc ₁ include those having 1 to 30 carbon atoms, and preferably an alkyl group, an aryl group, or a plurality of these optionally substituted are a single bond, —O—, —CO ₂ —, — _{S -, - SO 3 -,} - SO 2 N (Rd 1) - can be exemplified linked group a linking group such as.
Rd ₁ represents a hydrogen atom or an alkyl group, and may form a ring structure with the bonded alkyl group or aryl group.
The organic group of Rc ₁ is more preferably an alkyl group substituted at the 1-position with a fluorine atom or a fluoroalkyl group, or a phenyl group substituted with a fluorine atom or a fluoroalkyl group. By having a fluorine atom or a fluoroalkyl group, the acidity of the acid generated by light irradiation is increased and the sensitivity is improved. When Rc ₁ has 5 or more carbon atoms, it is preferable that at least one carbon atom does not have all the hydrogen atoms replaced by fluorine atoms, but a part of the hydrogen atoms remains. It is more preferable that the number of is greater than that of fluorine atoms. By not having a perfluoroalkyl group having 5 or more carbon atoms, ecotoxicity is reduced.
A particularly preferred embodiment of Rc ₁ is a group represented by the following general formula.

In the above general formula,
Rc ₆ is substituted with a perfluoroalkylene group having 4 or less carbon atoms, more preferably 2 to 4 carbon atoms, still more preferably 2 to 3 carbon atoms, or 1 to 4 fluorine atoms and / or 1 to 3 fluoroalkyl groups. Represents a phenylene group.
Ax represents a single bond or a linking group (preferably —O—, —CO ₂ —, —S—, —SO ₃ — or —SO ₂ N (Rd ₁ ) —). Rd ₁ represents a hydrogen atom or an alkyl group, and may combine with Rc ₇ to form a ring structure.
Rc ₇ represents a hydrogen atom, a fluorine atom, an optionally substituted linear or branched alkyl group, a monocyclic or polycyclic cycloalkyl group, or an aryl group. The alkyl group, cycloalkyl group and aryl group preferably do not have a fluorine atom as a substituent.

In the general formulas (AN3) and (AN4),
Rc ₃ , Rc ₄ and Rc ₅ each independently represents an organic group.

In the general formulas (AN3) and (AN4), the organic groups represented by Rc ₃ , Rc ₄ , and Rc ₅ are preferably the same as the preferred organic groups in Rc ₁ .
Rc ₃ and Rc ₄ may be bonded to form a ring.
Examples of the group formed by combining Rc ₃ and Rc ₄ include an alkylene group and an arylene group. Preferably, it is a C2-C4 perfluoroalkylene group. Rc ₃ and Rc ₄ are preferably bonded to form a ring, so that the acidity of the acid generated by light irradiation is increased and the sensitivity is improved, which is preferable.

The carbon number of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ is generally 1-30, preferably 1-20.
Two of R _{201 to} R ₂₀₃ may be bonded to form a ring structure, and the ring may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond, or a carbonyl group.
The two of the group formed by bonding of the R ₂₀₁ to R _203, there can be mentioned an alkylene group (e.g., butylene, pentylene).
Specific examples of the organic group as R ₂₀₁ , R ₂₀₂ and R ₂₀₃ include corresponding groups in the compounds (ZI-1), (ZI-2) and (ZI-3) described later.

In addition, the compound which has two or more structures represented by general formula (Z1) may be sufficient. For example, the general formula at least one of R ₂₀₁ to R ₂₀₃ of a compound represented by (ZI) is, at least one bond with structure of R ₂₀₁ to R ₂₀₃ of another compound represented by formula (ZI) It may be a compound.

  Further preferred examples of the component (Z1) include compounds (ZI-1), (ZI-2) and (ZI-3) described below.

The compound (ZI-1) is at least one of the aryl groups R ₂₀₁ to R ₂₀₃ in formula (ZI), arylsulfonium compound, i.e., a compound having arylsulfonium as a cation.
In the arylsulfonium compound, all of R _{201 to} R ₂₀₃ may be an aryl group, or a part of R _{201 to} R ₂₀₃ may be an aryl group, and the rest may be an alkyl group or a cycloalkyl group.
Examples of the arylsulfonium compound include triarylsulfonium compounds, diarylalkylsulfonium compounds, aryldialkylsulfonium compounds, diarylcycloalkylsulfonium compounds, and aryldicycloalkylsulfonium compounds.
The aryl group of the arylsulfonium compound is preferably an aryl group such as a phenyl group or a naphthyl group, or a heteroaryl group such as an indole residue or a pyrrole residue, more preferably a phenyl group or an indole residue. When the arylsulfonium compound has two or more aryl groups, the two or more aryl groups may be the same or different.
The alkyl group that the arylsulfonium compound has as necessary is preferably a linear or branched alkyl group having 1 to 15 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an n-butyl group, sec- Examples thereof include a butyl group and a t-butyl group.
The cycloalkyl group that the arylsulfonium compound has as necessary is preferably a cycloalkyl group having 3 to 15 carbon atoms, and examples thereof include a cyclopropyl group, a cyclobutyl group, and a cyclohexyl group.
Aryl group, alkyl group of R ₂₀₁ to R _203, cycloalkyl group, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms), an aryl group (for example, 6 to 14 carbon atoms) , An alkoxy group (for example, having 1 to 15 carbon atoms), a halogen atom, a hydroxyl group, or a phenylthio group may be substituted. Preferred substituents are straight chain, branched alkyl groups having 1 to 12 carbon atoms, cycloalkyl groups having 3 to 12 carbon atoms, and straight chain, branched or cyclic alkoxy groups having 1 to 12 carbon atoms, and particularly preferred. Is an alkyl group having 1 to 4 carbon atoms and an alkoxy group having 1 to 4 carbon atoms. The substituent may be substituted with any one of the three R _{201 to} R ₂₀₃ , or may be substituted with all three. When R _{201 to} R ₂₀₃ are an aryl group, the substituent is preferably substituted at the p-position of the aryl group.

Next, the compound (ZI-2) will be described.
The compound (ZI-2) is, R ₂₀₁ to R ₂₀₃ in formula (ZI) each independently is a compound when it represents an organic group having no aromatic ring. Here, the aromatic ring includes an aromatic ring containing a hetero atom.
The organic group having no aromatic ring as R ₂₀₁ to R ₂₀₃ generally has 1 to 30 carbon atoms, preferably 1 to 20 carbon atoms.
R _{201 to} R ₂₀₃ are each independently preferably an alkyl group, a cycloalkyl group, an allyl group, or a vinyl group, more preferably a linear, branched, cyclic 2-oxoalkyl group, an alkoxycarbonylmethyl group, Particularly preferred is a linear or branched 2-oxoalkyl group.

The alkyl group as R ₂₀₁ to R ₂₀₃ may be either straight-chain, branched, preferably a straight-chain or branched alkyl group (e.g., methyl group, an ethyl group having 1 to 10 carbon atoms, a propyl group Butyl group, pentyl group). The alkyl group as R ₂₀₁ to R ₂₀₃ is a straight-chain or branched 2-oxoalkyl group, more preferably an alkoxycarbonylmethyl group.
The cycloalkyl group as R ₂₀₁ to R ₂₀₃ is preferably, and a cycloalkyl group having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, norbornyl). The cycloalkyl group as R ₂₀₁ to R ₂₀₃ is more preferably a cyclic 2-oxoalkyl group.
The 2-oxoalkyl group as R _{201 to} R ₂₀₃ may be linear, branched or cyclic, and preferably a group having> C═O at the 2-position of the above alkyl group or cycloalkyl group Can be mentioned.
The alkoxy group in the alkoxycarbonylmethyl group as R ₂₀₁ to R _203, preferably may be mentioned alkoxy groups having 1 to 5 carbon atoms (a methoxy group, an ethoxy group, a propoxy group, a butoxy group, a pentoxy group).
R _{201 to} R ₂₀₃ may be further substituted with a halogen atom, an alkoxy group (for example, having 1 to 5 carbon atoms), a hydroxyl group, a cyano group, or a nitro group.

  The compound (ZI-3) is a compound represented by the following general formula (ZI-3), and is a compound having a phenacylsulfonium salt structure.

In general formula (ZI-3),
R _{1c to} R _5c each independently represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkoxy group or a halogen atom.
R _6c and R _7c each independently represents a hydrogen atom, an alkyl group or a cycloalkyl group.
Rx and Ry each independently represents an alkyl group, a cycloalkyl group, an allyl group or a vinyl group.
Any two or more of R _1c to R _7c, and R _x and R _y may be bonded to each other to form a ring structure, the ring structure may contain an oxygen atom, a sulfur atom, an ester bond, an amide bond May be included. Examples of the group formed by combining any two or more of R _{1c to} R _7c and R _x and R _y include a butylene group and a pentylene group.
X ^- represents a non-nucleophilic anion, in formula (ZI) in, X ^- are those same as the.

The alkyl group as R _{1c to} R _7c may be either linear or branched, for example, an alkyl group having 1 to 20 carbon atoms, preferably a linear or branched alkyl group having 1 to 12 carbon atoms. Examples thereof include a group (for example, methyl group, ethyl group, linear or branched propyl group, linear or branched butyl group, linear or branched pentyl group).
Preferable examples of the cycloalkyl group as R _{1c to} R _7c include a cycloalkyl group having 3 to 8 carbon atoms (for example, a cyclopentyl group and a cyclohexyl group).
The alkoxy group as R _{1c to} R _{5c may} be linear, branched or cyclic, for example, an alkoxy group having 1 to 10 carbon atoms, preferably a linear or branched alkoxy group having 1 to 5 carbon atoms. (For example, methoxy group, ethoxy group, linear or branched propoxy group, linear or branched butoxy group, linear or branched pentoxy group), C3-C8 cyclic alkoxy group (for example, cyclopentyloxy group, cyclohexyloxy group) ).
Preferably, any one of R _{1c to} R _5c is a linear or branched alkyl group, a cycloalkyl group, or a linear, branched or cyclic alkoxy group, and more preferably the sum of carbon numbers of R _{1c to} R _5c. Is 2-15. Thereby, solvent solubility improves more and generation | occurrence | production of a particle is suppressed at the time of a preservation | save.

_Examples of the alkyl group as R _x and R _y include the same alkyl groups as R _{1c to} R _7c . The alkyl group as R _x and R _y is more preferably a linear or branched 2-oxoalkyl group or an alkoxycarbonylmethyl group.
The cycloalkyl group as R _x and R _y may be the same as the cycloalkyl group as R _1c to R _7c. The cycloalkyl group as R _x and R _y is more preferably a cyclic 2-oxoalkyl group.
Examples of the linear, branched, or cyclic 2-oxoalkyl group include a group having> C═O at the 2-position of the alkyl group or cycloalkyl group as R _{1c to} R _7c .
Examples of the alkoxy group in the alkoxycarbonylmethyl group include the same alkoxy groups as R _{1c to} R _5c .
R _x and R _y are preferably an alkyl group having 4 or more carbon atoms, more preferably 6 or more, and still more preferably 8 or more.

In the general formulas (ZII) and (ZIII),
R ₂₀₄ to R ₂₀₇ each independently represents an optionally substituted aryl group, which may have a substituent alkyl or optionally substituted cycloalkyl group.
The aryl group of R ₂₀₄ to R _207, a phenyl group, a naphthyl group, more preferably a phenyl group.
The alkyl group as R ₂₀₄ to R ₂₀₇ may be either straight-chain, branched, preferably a straight-chain or branched alkyl group (e.g., methyl group, an ethyl group having 1 to 10 carbon atoms, a propyl group Butyl group, pentyl group).
The cycloalkyl group as R ₂₀₄ to R ₂₀₇ is preferably, and a cycloalkyl group having 3 to 10 carbon atoms (e.g., cyclopentyl, cyclohexyl, norbornyl).
The R ₂₀₄ to R ₂₀₇ are substituents which may have, for example, an alkyl group (for example, 1 to 15 carbon atoms), a cycloalkyl group (for example, 3 to 15 carbon atoms), an aryl group (e.g., 6 carbon atoms 15), alkoxy groups (for example, having 1 to 15 carbon atoms), halogen atoms, hydroxyl groups, phenylthio groups and the like.
X ⁻ represents a non-nucleophilic anion, and examples thereof include the same as the non-nucleophilic anion of X ^{− in} formula (I).

  Among the compounds that generate an acid upon irradiation with actinic rays or radiation, compounds represented by the following general formulas (ZIV), (ZV), and (ZVI) can be further exemplified.

In general formulas (ZIV) to (ZVI),
Ar ₃ and Ar ₄ each independently represent a substituted or unsubstituted aryl group.
R ₂₀₈ represents a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, or a substituted or unsubstituted aryl group.
R ₂₀₉ and R ₂₁₀ represent a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted aryl group, or an electron withdrawing group. R ₂₀₉ is preferably a substituted or unsubstituted aryl group. R ₂₁₀ is preferably an electron withdrawing group, more preferably a cyano group or a fluoroalkyl group.
A represents a substituted or unsubstituted alkylene group, a substituted or unsubstituted alkenylene group, or a substituted or unsubstituted arylene group.

  Among the compounds that decompose upon irradiation with actinic rays or radiation to generate an acid, examples of particularly preferable compounds are listed below.

As actinic rays or a compound capable of generating an acid upon irradiation of radiation, in the general formula (ZI), triarylsulfonium salts R ₂₀₁ to R ₂₀₃ is an aryl group, diazodisulfone derivatives represented by the general formula (ZIII) Or it is preferable to use the oxime ester of the organic sulfonic acid represented by general formula (ZVI).

  As a compound that generates an acid upon irradiation with actinic rays or radiation, at least one compound selected from triarylsulfonium salts and at least one compound selected from diazodisulfone derivatives or oxime esters of organic sulfonic acids are used. Is more preferable.

An acid generator can be used individually by 1 type or in combination of 2 or more types. When two or more types are used in combination, it is preferable to combine two types of compounds that generate two types of organic acids that differ in the total number of atoms excluding hydrogen atoms by two or more.
When used for patterning with a KrF excimer laser beam, the content of the acid generator in the composition is preferably 0.1 to 20% by mass, more preferably 0.8%, based on the total solid content of the positive resist composition. It is 5-10 mass%, More preferably, it is 1-7 mass%.

Carboxylic acid generator A compound that generates a carboxylic acid upon irradiation with actinic rays or radiation (also referred to as a carboxylic acid generator) may be used.
As the carboxylic acid generator, a compound represented by the following general formula (C) is preferable.

In the general formula (C), R _{21 to} R ₂₃ each independently represents an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group, and R ₂₄ represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group. Z represents a sulfur atom or an iodine atom. When Z is a sulfur atom, p is 1, and when Z is an iodine atom, p is 0.

In the general formula (C), R _{21 to} R ₂₃ each independently represents an alkyl group, a cycloalkyl group, an alkenyl group, or an aryl group, and these groups may have a substituent.
Examples of the substituent that the alkyl group, cycloalkyl group or alkenyl group may have include a halogen atom (a chlorine atom, a bromine atom, a fluorine atom, etc.), an aryl group (a phenyl group, a naphthyl group, etc.), a hydroxy group, An alkoxy group (methoxy group, ethoxy group, butoxy group, etc.) etc. can be mentioned.
Examples of the substituent that the aryl group may have include a halogen atom (chlorine atom, bromine atom, fluorine atom, etc.), nitro group, cyano group, alkyl group (methyl group, ethyl group, t-butyl group, t -Amyl group, octyl group, etc.), hydroxy group, alkoxy group (methoxy group, ethoxy group, butoxy group, etc.) and the like.

R _{21 to} R ₂₃ are preferably each independently an alkyl group having 1 to 12 carbon atoms, a cycloalkyl group having 3 to 12 carbon atoms, an alkenyl group having 2 to 12 carbon atoms, or an aryl group having 6 to 24 carbon atoms. And more preferably an alkyl group having 1 to 6 carbon atoms, a cycloalkyl group having 3 to 6 carbon atoms, and an aryl group having 6 to 18 carbon atoms, and particularly preferably an aryl group having 6 to 15 carbon atoms. Each of these groups may have a substituent.

R ₂₄ represents a hydrogen atom, an alkyl group, a cycloalkyl group, an alkenyl group or an aryl group.
Examples of the substituent that the alkyl group, cycloalkyl group, and alkenyl group may have are the same as those described as examples of the substituent when R ₂₁ is an alkyl group. Examples of the substituent for the aryl group, the R ₂₁ may be the same as those mentioned as examples of the substituent when it is an aryl group.

R ₂₄ is preferably a hydrogen atom, an alkyl group having 1 to 30 carbon atoms, a cycloalkyl group having 3 to 30 carbon atoms, an alkenyl group having 2 to 30 carbon atoms, an aryl group having 6 to 24 carbon atoms, and more Preferably, they are a C1-C18 alkyl group, a C3-C18 cycloalkyl group, and a C6-C18 aryl group, Most preferably, a C1-C12 alkyl group, C3-C3 A cycloalkyl group having 12 carbon atoms and an aryl group having 6 to 15 carbon atoms. Each of these groups may have a substituent.

Z represents a sulfur atom or an iodine atom. p is 1 when Z is a sulfur atom, and 0 when Z is an iodine atom.
Two or more of the cation moieties of formula (C) are bonded by a single bond or a linking group (for example, -S-, -O-, etc.) to form a cation structure having a plurality of cation moieties of formula (C). May be.

  Although the preferable specific example of a carboxylic acid generator is given to the following, of course, it is not limited to these.

Regarding the carboxylic acid generator, the content in the positive resist composition of the present invention is preferably 0.01 to 10% by mass, more preferably 0.03 to 5% by mass, based on the total solid content of the composition. %, Particularly preferably 0.05 to 3% by mass. One type of carboxylic acid generator may be used, or two or more types may be mixed and used.
The carboxylic acid generator can be synthesized by a known method such as the synthesis method described in JP-A-2002-27806.
When a sulfonic acid generator and a carboxylic acid generator are used in combination, the carboxylic acid generator / sulfonic acid generator (mass ratio) is usually 99.9 / 0.1 to 50/50, preferably 99/1 to 60. / 40, particularly preferably 98/2 to 70/30.

  When used for patterning by EUV, X-ray or electron beam, the compound represented by the general formula (I) (acid generator A1) is particularly preferable as the acid generator.

In general formula (I),
R ^{1 to} R ¹³ each independently represents a hydrogen atom or a substituent.
Z is a single bond or a divalent linking group.
X ⁻ represents a counter anion.

In the general formula (I), at least one of R ^{1 to} R ¹³ is preferably a substituent containing an alcoholic hydroxyl group. When at least one of R ^{1 to} R ¹³ is a substituent containing an alcoholic hydroxyl group (the alcoholic hydroxyl group represents a hydroxyl group bonded to a carbon atom of an alkyl group), R ^{1 to} R ¹³ are represented by —W—Y. Is done. Y is an alkyl group substituted with a hydroxyl group, and W is a single bond or a divalent linking group.

The alkyl group of Y is methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, sec-butyl, pentyl, neopentyl, hexyl, heptyl, octyl, nonyl, decyl Group, undecyl group, dodecyl group, tridecyl group, tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, adamantyl group, norbornyl group, boronyl group Preferably ethyl group, propyl group, isopropyl group, n-butyl group, isobutyl group and sec-butyl group, more preferably ethyl group, propyl group and isopropyl group. Y particularly preferably contains a —CH ₂ CH ₂ OH structure.

  The divalent linking group represented by W is not particularly limited, and examples thereof include an alkoxy group, an acyloxy group, a carbamoyloxy group, an alkoxycarbonyloxy group, an aryloxycarbonyloxy group, an acylamino group, an aminocarbonylamino group, Alkoxycarbonylamino group, aryloxycarbonylamino group, sulfamoylamino group, alkyl and arylsulfonylamino group, alkylthio group, arylthio group, sulfamoyl group, alkyl and arylsulfinyl group, alkyl and arylsulfonyl group, acyl group, aryloxy Examples thereof include a divalent group in which an arbitrary hydrogen atom in a monovalent group such as a carbonyl group, an alkoxycarbonyl group, or a carbamoyl group is replaced with a single bond.

  W is preferably a single bond, an alkoxy group, an acyloxy group, an acylamino group, an alkyl and arylsulfonylamino group, an alkylthio group, an alkylsulfonyl group, an acyl group, an alkoxycarbonyl group, and any hydrogen atom in the carbamoyl group replaced with a single bond. It is a divalent group, more preferably a divalent group in which any hydrogen atom in a single bond, acyloxy group, alkylsulfonyl group, acyl group or alkoxycarbonyl group is replaced with a single bond.

When R ^{1 to} R ¹³ are substituents containing an alcoholic hydroxyl group, the number of carbon atoms contained is preferably 2 to 10, more preferably 2 to 6, and particularly preferably 2 to 4. .
The substituent containing an alcoholic hydroxyl group as R ^{1 to} R ¹³ may have two or more alcoholic hydroxyl groups. The number of alcoholic hydroxyl groups having a substituent containing an alcoholic hydroxyl group as R ^{1 to} R ¹³ is 1 to 6, preferably 1 to 3, and more preferably 1. preferable.
The number of alcoholic hydroxyl groups of the compound represented by the general formula (I) is 1 to 10 in total, preferably 1 to 6, more preferably 1 in total for R ^{1 to} R ^13. It is three from.

When R ^{1 to} R ¹³ do not contain an alcoholic hydroxyl group, R ^{1 to} R ¹³ are each independently a hydrogen atom or a substituent, and any substituent may be used without any particular limitation. Atoms, alkyl groups (including cycloalkyl groups, bicycloalkyl groups, and tricycloalkyl groups), alkenyl groups (including cycloalkenyl groups and bicycloalkenyl groups), alkynyl groups, aryl groups, and heterocyclic groups (referred to as heterocyclic groups) Cyano group, nitro group, carboxyl group, alkoxy group, aryloxy group, silyloxy group, heterocyclic oxy group, acyloxy group, carbamoyloxy group, alkoxycarbonyloxy group, aryloxycarbonyloxy group, amino group ( Anilino group), ammonio group, acylamino group, aminocarbonylamino Group, alkoxycarbonylamino group, aryloxycarbonylamino group, sulfamoylamino group, alkyl and arylsulfonylamino group, mercapto group, alkylthio group, arylthio group, heterocyclic thio group, sulfamoyl group, sulfo group, alkyl and arylsulfinyl Groups, alkyl and arylsulfonyl groups, acyl groups, aryloxycarbonyl groups, alkoxycarbonyl groups, carbamoyl groups, aryl and heterocyclic azo groups, imide groups, phosphino groups, phosphinyl groups, phosphinyloxy groups, phosphinylamino groups , Phosphono group, silyl group, hydrazino group, ureido group, boronic acid group (—B (OH) ₂ ), phosphato group (—OPO (OH) ₂ ), sulfato group (—OSO ₃ H), and other known substitutions The group is given as an example.

Further, two adjacent R ^{1 to} R ¹³ may be combined to form a ring (aromatic or non-aromatic hydrocarbon ring or heterocyclic ring. These may be further combined to form a polycyclic fused ring. For example, benzene ring, naphthalene ring, anthracene ring, phenanthrene ring, fluorene ring, triphenylene ring, naphthacene ring, biphenyl ring, pyrrole ring, furan ring, thiophene ring, imidazole ring, oxazole ring, thiazole ring, pyridine ring, pyrazine Ring, pyrimidine ring, pyridazine ring, indolizine ring, indole ring, benzofuran ring, benzothiophene ring, isobenzofuran ring, quinolidine ring, quinoline ring, phthalazine ring, naphthyridine ring, quinoxaline ring, quinoxazoline ring, isoquinoline ring, carbazole ring, Phenanthridine ring, acridine ring, phena Tororin ring, thianthrene ring, chromene ring, xanthene ring, phenoxathiin ring, a phenothiazine ring and a phenazine ring.) May also be formed.

When R ^{1 to} R ¹³ do not contain an alcoholic hydroxyl group, R ^{1 to} R ¹³ are preferably a hydrogen atom or a halogen atom, an alkyl group (including a cycloalkyl group, a bicycloalkyl group, and a tricycloalkyl group), an alkenyl group ( Cycloalkenyl group, bicycloalkenyl group), alkynyl group, aryl group, cyano group, carboxyl group, alkoxy group, aryloxy group, acyloxy group, carbamoyloxy group, acylamino group, aminocarbonylamino group, alkoxycarbonylamino group, Aryloxycarbonylamino group, sulfamoylamino group, alkyl and arylsulfonylamino group, alkylthio group, arylthio group, sulfamoyl group, alkyl and arylsulfonyl group, aryloxycarbonyl group, alkoxycarbonyl group A carbamoyl group, an imido group, a silyl group, a ureido group.

When R ^{1 to} R ¹³ do not contain an alcoholic hydroxyl group, R ^{1 to} R ¹³ are more preferably a hydrogen atom or a halogen atom, an alkyl group (including a cycloalkyl group, a bicycloalkyl group, and a tricycloalkyl group), a cyano group. , Alkoxy group, acyloxy group, acylamino group, aminocarbonylamino group, alkoxycarbonylamino group, alkyl and arylsulfonylamino group, alkylthio group, sulfamoyl group, alkyl and arylsulfonyl group, alkoxycarbonyl group and carbamoyl group.
Further, when R ^{1 to} R ¹³ do not contain an alcoholic hydroxyl group, R ^{1 to} R ¹³ are particularly preferably a hydrogen atom or an alkyl group (including a cycloalkyl group, a bicycloalkyl group and a tricycloalkyl group), a halogen atom, An alkoxy group;

In general formula (I), at least one of R ^{1 to} R ¹³ contains an alcoholic hydroxyl group, and preferably at least one of R ^{9 to} R ¹³ contains an alcoholic hydroxyl group.

Z represents a single bond or a divalent linking group, and examples of the divalent linking group include an alkylene group, an arylene group, a carbonyl group, a sulfonyl group, a carbonyloxy group, a carbonylamino group, a sulfonylamide group, an ether group, and a thioether. Group, amino group, disulfide group, acyl group, alkylsulfonyl group, —CH═CH—, —C≡C—, aminocarbonylamino group, aminosulfonylamino group, etc., which may have a substituent. These substituents are the same as the substituents shown for R ^{1 to} R ¹³ above. Z preferably has a single bond, alkylene group, arylene group, ether group, thioether group, amino group, —CH═CH—, —C≡C—, aminocarbonylamino group, aminosulfonylamino group, etc. A substituent, more preferably a single bond, an ether group or a thioether group, particularly preferably a single bond.

The compound represented by the general formula (I) has a counter anion X ⁻ . As an anion, an organic anion is desirable. An organic anion represents an anion containing at least one carbon atom. Furthermore, the organic anion is preferably a non-nucleophilic anion. A non-nucleophilic anion is an anion that has an extremely low ability to cause a nucleophilic reaction, and is an anion that can suppress degradation over time due to an intramolecular nucleophilic reaction.
Examples of the non-nucleophilic anion include a sulfonate anion, a carboxylate anion, a sulfonylimide anion, a bis (alkylsulfonyl) imide anion, and a tris (alkylsulfonyl) methyl anion.
Examples of the non-nucleophilic sulfonate anion include an alkyl sulfonate anion, an aryl sulfonate anion, and a camphor sulfonate anion. Examples of the non-nucleophilic carboxylate anion include an alkylcarboxylate anion, an arylcarboxylate anion, and an aralkylcarboxylate anion.

The alkyl moiety in the alkyl sulfonate anion may be an alkyl group or a cycloalkyl group, and preferably an alkyl group having 1 to 30 carbon atoms and a cycloalkyl group having 3 to 30 carbon atoms, such as a methyl group or an ethyl group. Group, propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, pentyl group, neopentyl group, hexyl group, heptyl group, octyl group, nonyl group, decyl group, undecyl group, dodecyl group, tridecyl group Tetradecyl group, pentadecyl group, hexadecyl group, heptadecyl group, octadecyl group, nonadecyl group, eicosyl group, cyclopropyl group, cyclopentyl group, cyclohexyl group, adamantyl group, norbornyl group, boronyl group and the like.
The aryl group in the aryl sulfonate anion is preferably an aryl group having 6 to 14 carbon atoms, such as a phenyl group, a tolyl group, and a naphthyl group.
Examples of the substituent of the alkyl group, cycloalkyl group and aryl group in the alkyl sulfonate anion and aryl sulfonate anion include, for example, a nitro group, a halogen atom (fluorine atom, chlorine atom, bromine atom, iodine atom), carboxyl group, Hydroxyl group, amino group, cyano group, alkoxy group (preferably 1 to 5 carbon atoms), cycloalkyl group (preferably 3 to 15 carbon atoms), aryl group (preferably 6 to 14 carbon atoms), alkoxycarbonyl group (preferably May include 2 to 7 carbon atoms, an acyl group (preferably 2 to 12 carbon atoms), an alkoxycarbonyloxy group (preferably 2 to 7 carbon atoms), and the like. About the aryl group and ring structure which each group has, an alkyl group (preferably C1-C15) can further be mentioned as a substituent.

  Examples of the alkyl moiety in the alkylcarboxylate anion include the same alkyl group and cycloalkyl group as in the alkylsulfonate anion. Examples of the aryl group in the arylcarboxylate anion include the same aryl groups as in the arylsulfonate anion. The aralkyl group in the aralkyl carboxylate anion is preferably an aralkyl group having 6 to 12 carbon atoms, such as a benzyl group, a phenethyl group, a naphthylmethyl group, a naphthylethyl group, and a naphthylmethyl group.

Examples of the alkyl group, cycloalkyl group, aryl group and aralkyl group substituent in the alkylcarboxylate anion, arylcarboxylate anion and aralkylcarboxylate anion include, for example, the same halogen atom, alkyl group as in the arylsulfonate anion, A cycloalkyl group, an alkoxy group, an alkylthio group, etc. can be mentioned. Examples of the sulfonylimide anion include saccharin anion.
The alkyl group in the bis (alkylsulfonyl) imide anion and tris (alkylsulfonyl) methyl anion is preferably an alkyl group having 1 to 5 carbon atoms, such as a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, An isobutyl group, a sec-butyl group, a pentyl group, a neopentyl group, and the like can be given. Examples of the substituent for these alkyl groups include a halogen atom, an alkyl group substituted with a halogen atom, an alkoxy group, and an alkylthio group.
Examples of other non-nucleophilic anions include fluorinated phosphorus, fluorinated boron, and fluorinated antimony.

The counter anion X ⁻ of the compound represented by the general formula (I) is preferably a sulfonate anion, and more preferably an aryl sulfonate anion.
Specific examples of counter anions include methane sulfonate anion, trifluoromethane sulfonate anion, pentafluoroethane sulfonate anion, heptafluoropropane sulfonate anion, perfluorobutane sulfonate anion, perfluorohexane sulfonate anion, perfluoro. Octane sulfonate anion, pentafluorobenzene sulfonate anion, 3,5-bistrifluoromethylbenzene sulfonate anion, 2,4,6-triisopropylbenzene sulfonate anion, perfluoroethoxyethane sulfonate anion, 2, 3, 5 , 6-tetrafluoro-4-dodecyloxybenzenesulfonate anion, p-toluenesulfonate anion, 2,4,6-trimethylbenzenesulfonate anion, and the like.

  200-2000 are preferable and, as for the molecular weight of the compound represented by general formula (I), 400-1000 are especially preferable.

  The compound represented by the general formula (I) is a method in which a benzene derivative containing a hydroxyl group protected by a protecting group as a substituent and a cyclic sulfoxide compound are condensed to form a sulfonium salt, and the protecting group of the hydroxyl group is deprotected, etc. Can be synthesized.

(In the figure, W is a divalent linking group, R is an alkylene group, and P is a protecting group.)

Examples of acids used for the reaction of sulfoniumation include methanesulfonic acid, ethanesulfonic acid, propanesulfonic acid, butanesulfonic acid, pentanesulfonic acid, trifluoromethanesulfonic acid, benzenesulfonic acid, p-toluenesulfonic acid, p-ethylbenzenesulfonic acid, Nonafluorobutanesulfonic acid and the like can be mentioned, and the conjugate base of the acid used becomes the anion of sulfonium. Examples of the condensing agent used in the sulfoniumation reaction include acid anhydrides, such as trifluoroacetic acid anhydride, polyphosphoric acid, methanesulfonic acid anhydride, trifluoromethanesulfonic acid anhydride, p-toluenesulfonic acid anhydride, nona. Examples include strong acid anhydrides such as fluorobutanesulfonic anhydride, tetrafluorosuccinic anhydride, hexafluoroglutaric anhydride, chlorodifluoroacetic anhydride, pentafluoropropionic anhydride, heptafluorobutanoic anhydride.
Examples of the hydroxyl-protecting group P include ethers and esters, and examples include methyl ether, aryl ether, benzyl ether, acetic acid ester, benzoic acid ester, and carbonic acid ester.
The counter anion X ⁻ can be converted into a desired anion by passing through an ion exchange resin and adding a conjugate acid of the target anion.

  Although the specific example of a compound represented by general formula (I) below is shown, it is not limited to these.

An acid generator can be used individually by 1 type or in combination of 2 or more types.
In the present invention, the content of the acid generator is preferably 10 to 50% by mass with respect to the total solid content of the positive resist composition when used for patterning by EUV, X-ray or electron beam, More preferably, it is 20-40 mass%.

In ArF or KrF exposure, the photoenergy photoacid generator incident on the positive resist composition is absorbed, and the photoacid generator in an excited state is decomposed to generate an acid. Accordingly, the absorption rate of incident light is determined by the molecular extinction coefficient of the photoacid generator and the concentration of the photoacid generator. On the other hand, from the viewpoint of pattern shape, the light absorption rate of the positive resist composition is increased. Since the resist pattern shape is known to deteriorate when the transmittance falls below about 70%, the concentration of the photoacid generator is naturally limited.
In contrast, in EUV or electron beam exposure, the energy per incident photon or electron is very high compared to conventional ArF or KrF exposure, and the absorption rate of the energy is the chemistry of positive resist compositions. Since it hardly depends on the structure, it is considered that there is no restriction on the photoacid generator concentration from the transmittance.
On the other hand, it has been found that when the photoacid generator concentration is increased, the photoacid generators aggregate with each other, resulting in a decrease in acid generation efficiency and deterioration in stability. According to the present invention, the solid content concentration is optimized even with a high concentration photoacid generator that cannot be used practically because the transmittance and aggregation of the photoacid generator are problematic in conventional ArF and KrF positive resist compositions. It was found that it can be used more effectively. Although this was a completely unexpected effect, the resist film was maintained by maintaining an appropriate concentration of the photoacid generator in the state of the resist solution (this point relates to the “total solid content concentration” described later). It is considered that a stable dispersed state has been maintained even after it has been made.

(C) Organic Basic Compound The positive resist composition of the present invention can contain (C) an organic basic compound. (C) By combining an organic basic compound, the effect of the present case can be further enhanced.
The organic basic compound used in the present invention is preferably an organic basic compound having a stronger basicity than phenol.

  Preferred organic basic compounds are compounds having structures of the following formulas (A) to (E) as a preferred chemical environment. Formulas (B) to (E) may be part of a ring structure.

In general formula (A),
R ²⁵⁰ , R ²⁵¹ and R ²⁵² are each independently a hydrogen atom, an alkyl having 1 to 20 carbons, a cycloalkyl group having 3 to 20 carbons or an aryl group having 6 to 20 carbons, wherein R ²⁵⁰ And R ²⁵¹ may combine with each other to form a ring. These may have a substituent. Examples of the alkyl group and cycloalkyl group having a substituent include an aminoalkyl group having 1 to 20 carbon atoms, an aminocycloalkyl group having 3 to 20 carbon atoms, and 1 to 1 carbon atoms. A 20 hydroxyalkyl group or a C 3-20 hydroxycycloalkyl group is preferred. These may contain an oxygen atom, a sulfur atom, or a nitrogen atom in the alkyl chain.

In general formula (E),
R ²⁵³ , R ²⁵⁴ , R ²⁵⁵ and R ²⁵⁶ each independently represent an alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 3 to 6 carbon atoms.

As the organic basic compound, an amine compound having a sulfonate group and an ammonium salt compound having a sulfonate group can be used.
In the amine compound having a sulfonic acid ester group and the ammonium salt compound having a sulfonic acid ester group, the sulfonic acid ester group may be any of alkyl sulfonic acid ester, cycloalkyl group sulfonic acid ester, and aryl sulfonic acid ester. In the case of an alkyl sulfonate ester, the alkyl group has 1 to 20 carbon atoms, in the case of a cycloalkyl sulfonate ester, the cycloalkyl group has 3 to 20 carbon atoms, and in the case of an aryl sulfonate ester, the aryl group has 6 carbon atoms. ~ 12 are preferred. Alkyl sulfonic acid ester, cycloalkyl sulfonic acid ester, and aryl sulfonic acid ester may have a substituent. Examples of the substituent include a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, and a sulfonic acid. An ester group is preferred.

It is preferable to have at least one oxyalkylene group between the sulfonate group and the nitrogen atom. The number of oxyalkylene groups is 1 or more, preferably 3 to 9, more preferably 4 to 6 in the molecule. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or —CH ₂ CH ₂ CH ₂ O—) is preferable, and more preferably oxy Ethylene group.

  Preferred organic basic compounds include compounds having an imidazole structure, diazabicyclo structure, onium hydroxide structure, onium carboxylate structure, trialkylamine structure, aniline structure or pyridine structure, alkylamine derivatives having hydroxyl groups and / or ether bonds, hydroxyl groups And / or aniline derivatives having an ether bond.

Examples of the compound having an imidazole structure include imidazole, 2,4,5-triphenylimidazole, benzimidazole, and the like.
Examples of the compound having a diazabicyclo structure include 1,4-diazabicyclo [2,2,2] octane, 1,5-diazabicyclo [4,3,0] non-5-ene, and 1,8-diazabicyclo [5,4. 0] undec-7-ene and the like.
Examples of the compound having an onium hydroxide structure include triarylsulfonium hydroxide, phenacylsulfonium hydroxide, sulfonium hydroxide having a 2-oxoalkyl group, specifically, triphenylsulfonium hydroxide, tris (t-butylphenyl) Examples thereof include sulfonium hydroxide, bis (t-butylphenyl) iodonium hydroxide, phenacylthiophenium hydroxide, and 2-oxopropylthiophenium hydroxide.
As the compound having an onium carboxylate structure, the anion portion of the compound having an onium hydroxide structure is converted to a carboxylate, and examples thereof include acetate, adamantane-1-carboxylate, and perfluoroalkylcarboxylate. .
Examples of the compound having a trialkylamine structure include tri (n-butyl) amine, tri (n-octyl) amine, tri (n-dodecyl) amine, dicyclomethylamine, and dicycloethylamine.
Examples of aniline compounds include 2,6-diisopropylaniline and N, N-dimethylaniline.
Examples of the alkylamine derivative having a hydroxyl group and / or an ether bond include ethanolamine, diethanolamine, triethanolamine, and tris (methoxyethoxyethyl) amine.
Examples of aniline derivatives having a hydroxyl group and / or an ether bond include N, N-bis (hydroxyethyl) aniline.

  Examples of the organic basic compound further include an amine compound having a phenoxy group and an ammonium salt compound having a phenoxy group.

As the amine compound, a primary, secondary or tertiary amine compound can be used, and an amine compound in which at least one alkyl group is bonded to a nitrogen atom is preferable. The amine compound is more preferably a tertiary amine compound. As long as at least one alkyl group (preferably having 1 to 20 carbon atoms) is bonded to a nitrogen atom, the amine compound has an cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group (preferably having 3 to 20 carbon atoms). Preferably C6-C12) may be bonded to a nitrogen atom. The amine compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed. The number of oxyalkylene groups is 1 or more, preferably 3 to 9, more preferably 4 to 6 in the molecule. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or —CH ₂ CH ₂ CH ₂ O—) is preferable, and more preferably oxy Ethylene group.

As the ammonium salt compound, a primary, secondary, tertiary, or quaternary ammonium salt compound can be used, and an ammonium salt compound in which at least one alkyl group is bonded to a nitrogen atom is preferable. As long as at least one alkyl group (preferably having 1 to 20 carbon atoms) is bonded to a nitrogen atom, the ammonium salt compound has a cycloalkyl group (preferably having 3 to 20 carbon atoms) or an aryl group in addition to the alkyl group. (Preferably having 6 to 12 carbon atoms) may be bonded to a nitrogen atom. The ammonium salt compound preferably has an oxygen atom in the alkyl chain and an oxyalkylene group is formed. The number of oxyalkylene groups is 1 or more, preferably 3 to 9, more preferably 4 to 6 in the molecule. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or CH ₂ CH ₂ CH ₂ O—) is preferable, and oxyethylene is more preferable. It is a group.
Examples of the anion of the ammonium salt compound include halogen atoms, sulfonates, borates, and phosphates. Among them, halogen atoms and sulfonates are preferable. As the halogen atom, chloride, bromide, and iodide are particularly preferable. As the sulfonate, an organic sulfonate having 1 to 20 carbon atoms is particularly preferable. Examples of the organic sulfonate include alkyl sulfonates having 1 to 20 carbon atoms and aryl sulfonates. The alkyl group of the alkyl sulfonate may have a substituent, and examples of the substituent include fluorine, chlorine, bromine, alkoxy groups, acyl groups, and aryl groups. Specific examples of the alkyl sulfonate include methane sulfonate, ethane sulfonate, butane sulfonate, hexane sulfonate, octane sulfonate, benzyl sulfonate, trifluoromethane sulfonate, pentafluoroethane sulfonate, and nonafluorobutane sulfonate. Examples of the aryl group of the aryl sulfonate include a benzene ring, a naphthalene ring, and an anthracene ring. The benzene ring, naphthalene ring and anthracene ring may have a substituent, and the substituent is preferably a linear or branched alkyl group having 1 to 6 carbon atoms or a cycloalkyl group having 3 to 6 carbon atoms. Specific examples of the linear or branched alkyl group and cycloalkyl group include methyl, ethyl, n-propyl, isopropyl, n-butyl, i-butyl, t-butyl, n-hexyl, cyclohexyl and the like. Examples of the other substituent include an alkoxy group having 1 to 6 carbon atoms, a halogen atom, cyano, nitro, an acyl group, and an acyloxy group.

  The amine compound having a phenoxy group and the ammonium salt compound having a phenoxy group are those having a phenoxy group at the terminal opposite to the nitrogen atom of the alkyl group of the amine compound or ammonium salt compound. The phenoxy group may have a substituent. Examples of the substituent of the phenoxy group include an alkyl group, an alkoxy group, a halogen atom, a cyano group, a nitro group, a carboxyl group, a carboxylic acid ester group, a sulfonic acid ester group, an aryl group, an aralkyl group, an acyloxy group, and an aryloxy group. Etc. The substitution position of the substituent may be any of the 2-6 positions. The number of substituents may be any in the range of 1 to 5.

It is preferable to have at least one oxyalkylene group between the phenoxy group and the nitrogen atom. The number of oxyalkylene groups is 1 or more, preferably 3 to 9, more preferably 4 to 6 in the molecule. Among the oxyalkylene groups, an oxyethylene group (—CH ₂ CH ₂ O—) or an oxypropylene group (—CH (CH ₃ ) CH ₂ O— or —CH ₂ CH ₂ CH ₂ O—) is preferable, and more preferably oxy Ethylene group.

  A tetraalkylammonium salt type nitrogen-containing basic compound can also be used. Of these, tetraalkylammonium hydroxide having 1 to 8 carbon atoms (tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetra- (n-butyl) ammonium hydroxide, etc.) is particularly preferable. These nitrogen-containing basic compounds are used alone or in combination of two or more.

  The positive resist composition of the present invention preferably contains an organic basic compound represented by the following general formula (C3) or (C4).

In general formula (C3),
Sa, Sb and Sc each independently represent an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group. Sa and Sb may be bonded to each other to form a ring.

  As the organic basic compound represented by the general formula (C3), tri (n-butyl) amine, tri (n-octyl) amine, tri (n-dodecyl) amine, dicyclomethylamine, dicyclo Ethylamine.

In general formula (C4),
Sd, Se, Sf and Sg each independently represents an alkyl group, a cycloalkyl group, an aryl group or an aralkyl group.

  As the organic basic compound represented by the general formula (C4), tetraalkylammonium hydroxide is more preferable, and tetra- (n-butyl) ammonium hydroxide and tetra- (n-octyl) ammonium hydroxy are more preferable. It is.

These organic basic compounds are used alone or in combination of two or more.
The molecular weight of the organic basic compound is preferably 100 to 1000, more preferably 100 to 800, and still more preferably 150 to 800.
When used for patterning with a KrF excimer laser, the content of the organic basic compound is usually 0.001 to 10% by mass, preferably 0.01 to 5% by mass, based on the solid content of the positive resist composition. It is.
When used for patterning by EUV, X-ray or electron beam, the content of the organic basic compound is 1.0 to 8.0% by mass with respect to the total solid content of the positive resist composition. More preferably, it is 1.5-5.0 mass%, More preferably, it is 2.0-4.0 mass%.

  The use ratio of the acid generator and the organic basic compound in the composition is preferably acid generator / organic basic compound (molar ratio) = 1.0 to 300. That is, the molar ratio is preferably 1.0 or more from the viewpoints of sensitivity and resolution, and is preferably 300 or less from the viewpoint of suppressing the reduction in resolution due to the thickening of the resist pattern over time until post-exposure heat treatment. The acid generator / organic basic compound (molar ratio) is more preferably 1.5 to 200, still more preferably 2.0 to 150.

Solid Concentration and (D) Solvent The positive resist composition of the present invention is prepared by dissolving the above components in a solvent.
The total solid concentration in the positive resist composition varies depending on the set value of the coating film thickness, but is preferably 2.0 to 25.0 mass%, more preferably 4.0 to 10.0 mass%.

Solvents for the preparation of the positive resist composition include ethylene dichloride, cyclohexanone, cyclopentanone, 2-heptanone, γ-butyrolactone, methyl ethyl ketone, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, 2-methoxyethyl acetate, Ethylene glycol monoethyl ether acetate, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, toluene, ethyl acetate, methyl lactate, ethyl lactate, methyl methoxypropionate, ethyl ethoxypropionate, methyl pyruvate, ethyl pyruvate, propyl pyruvate N, N-dimethylformamide, dimethyl sulfoxide, N-methylpyrrolidone, tetrahydrofuran, etc. Solvents are preferred, more preferably cyclohexanone, .gamma.-butyrolactone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, ethyl lactate, and particularly preferably propylene glycol monomethyl ether.
The solvent may be a single solvent or a mixed solvent in which two or more are mixed.
Of the total amount of solvent, it is particularly preferable to contain 50% by mass or more of propylene glycol monomethyl ether, most preferably 50 to 80% by mass. As the solvent used in combination with propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, cyclohexanone and ethyl lactate are preferable, and propylene glycol monomethyl ether acetate is most preferable.

  The positive resist composition of the present invention may contain the following components in addition to the above components.

(E) Fluorine-based and / or silicon-based surfactant The positive resist composition of the present invention further comprises a fluorine-based and / or silicon-based surfactant (fluorine-based surfactant and silicon-based surfactant, fluorine atom Or a surfactant containing both silicon atoms), or preferably two or more.

  When the positive resist composition of the present invention contains fluorine and / or a silicon-based surfactant, it is possible to provide a resist pattern with low adhesion and development defects with good sensitivity and resolution.

  Examples of these fluorine and / or silicon surfactants include, for example, JP-A No. 62-36663, JP-A No. 61-226746, JP-A No. 61-226745, JP-A No. 62-170950, JP 63-34540 A, JP 7-230165 A, JP 8-62834 A, JP 9-54432 A, JP 9-5988 A, JP 2002-277862 A, US Patent Nos. 5,405,720, 5,360,692, 5,529,881, 5,296,330, 5,436,098, 5,576,143, 5,294,511, 5,824,451 Surfactant can be mentioned, The following commercially available surfactant can also be used as it is.

  Examples of commercially available surfactants that can be used include F-top EF301, EF303 (manufactured by Shin-Akita Kasei Co., Ltd.), Florard FC430, 431 (manufactured by Sumitomo 3M Co., Ltd.), MegaFuck F171, F173, F176, F189, R08 (Dainippon Ink Chemical Co., Ltd.), Surflon S-382, SC101, 102, 103, 104, 105, 106 (Asahi Glass Co., Ltd.), Troisol S-366 (Troy Chemical Co., Ltd.), etc. Fluorine type surfactant or silicon type surfactant can be mentioned. Polysiloxane polymer KP-341 (manufactured by Shin-Etsu Chemical Co., Ltd.) can also be used as a silicon-based surfactant.

  In addition to the known surfactants described above, surfactants are derived from fluoroaliphatic compounds produced by the telomerization method (also referred to as the telomer method) or the oligomerization method (also referred to as the oligomer method). A surfactant using a polymer having a fluoroaliphatic group can be used. The fluoroaliphatic compound can be synthesized by the method described in JP-A-2002-90991.

  As the polymer having a fluoroaliphatic group, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate and / or (poly (oxyalkylene)) methacrylate is preferable and distributed irregularly. It may be block copolymerized. Examples of the poly (oxyalkylene) group include a poly (oxyethylene) group, a poly (oxypropylene) group, a poly (oxybutylene) group, and the like, and a poly (oxyethylene, oxypropylene, and oxyethylene group). A unit having different chain lengths in the same chain length, such as a block link) or poly (block link of oxyethylene and oxypropylene) may be used. Furthermore, a copolymer of a monomer having a fluoroaliphatic group and (poly (oxyalkylene)) acrylate (or methacrylate) is not only a binary copolymer but also a monomer having two or more different fluoroaliphatic groups, Further, it may be a ternary or higher copolymer obtained by simultaneously copolymerizing two or more different (poly (oxyalkylene)) acrylates (or methacrylates).

Examples of commercially available surfactants include Megafac F178, F-470, F-473, F-475, F-476, and F-472 (Dainippon Ink Chemical Co., Ltd.). Further, a copolymer of an acrylate (or methacrylate) having a C ₆ F ₁₃ group and (poly (oxyalkylene)) acrylate (or methacrylate), an acrylate (or methacrylate) having a C ₆ F ₁₃ group and (poly (oxy) (Ethylene)) acrylate (or methacrylate) and (poly (oxypropylene)) acrylate (or methacrylate) copolymer, acrylate (or methacrylate) and (poly (oxyalkylene)) acrylate having C ₈ F ₁₇ groups (or Copolymer of acrylate (or methacrylate), (poly (oxyethylene)) acrylate (or methacrylate), and (poly (oxypropylene)) acrylate (or methacrylate) having a C ₈ F ₁₇ group Coalesce, etc. It can be.

  The amount of fluorine and / or silicon surfactant used is preferably 0.0001 to 2% by mass, more preferably 0.001 to 1% by mass, based on the total solid content of the positive resist composition.

(F) A dissolution inhibiting compound having a molecular weight of 3000 or less that decomposes by the action of an acid to increase the solubility in an alkaline developer. Hereinafter, it is also referred to as “component (F)” or “dissolution inhibiting compound”.
(F) As a dissolution-inhibiting compound having a molecular weight of 3000 or less that decomposes by the action of an acid to increase the solubility in an alkaline developer, the transmittance of 220 nm or less is not lowered, so Proceedingof SPIE, 2724, 355 (1996). An alicyclic or aliphatic compound containing an acid-decomposable group is preferred, such as a cholic acid derivative containing an acid-decomposable group described in 1.

  When the positive resist composition of the present invention is irradiated with an electron beam, it preferably contains a structure in which the phenolic hydroxyl group of the phenol compound is substituted with an acid-decomposable group. The phenol compound preferably contains 1 to 9 phenol skeletons, more preferably 2 to 6 phenol skeletons.

  The molecular weight of the dissolution inhibiting compound in the present invention is 3000 or less, preferably 300 to 3000, and more preferably 500 to 2500.

  The addition amount of the dissolution inhibiting compound is preferably 3 to 50% by mass, more preferably 5 to 40% by mass, based on the total solid content of the positive resist composition.

  Specific examples of the dissolution inhibiting compound are shown below, but the present invention is not limited thereto.

Other Additives The positive resist composition of the present invention further promotes solubility in dyes, plasticizers, surfactants other than the above component (E), photosensitizers, and developers as necessary. A compound etc. can be contained.

  The dissolution accelerating compound for the developer that can be used in the present invention is a low molecular weight compound having a molecular weight of 1,000 or less and having two or more phenolic OH groups or one or more carboxy groups. When it has a carboxy group, an alicyclic or aliphatic compound is preferable.

  The preferable addition amount of these dissolution promoting compounds is 2 to 50% by mass, and more preferably 5 to 30% by mass with respect to the resin of component (A). 50 mass% or less is preferable at the point of development residue suppression and the pattern deformation prevention at the time of image development.

  Such phenolic compounds having a molecular weight of 1000 or less can be obtained by referring to methods described in, for example, JP-A-4-1222938, JP-A-2-28531, U.S. Pat. No. 4,916,210 and European Patent 219294. Can be easily synthesized.

  Specific examples of alicyclic or aliphatic compounds having a carboxyl group include carboxylic acid derivatives having a steroid structure such as cholic acid, deoxycholic acid, lithocholic acid, adamantane carboxylic acid derivatives, adamantane dicarboxylic acid, cyclohexane carboxylic acid, cyclohexane Examples thereof include, but are not limited to, dicarboxylic acids.

  In the present invention, a surfactant other than the above (E) fluorine-based and / or silicon-based surfactant may be added. Specifically, nonionic interfaces such as polyoxyethylene alkyl ethers, polyoxyethylene alkyl allyl ethers, polyoxyethylene / polyoxypropylene block copolymers, sorbitan aliphatic esters, polyoxyethylene sorbitan aliphatic esters, etc. Mention may be made of activators.

  These surfactants may be added alone or in some combination.

Antioxidant The positive resist composition of the present invention preferably contains an antioxidant.
The antioxidant is for preventing the organic material from being oxidized in the presence of oxygen.

  The antioxidant is not particularly limited as long as it is effective in preventing the oxidation of commonly used plastics, for example, a phenolic antioxidant, an antioxidant made of an organic acid derivative, and a sulfur-containing agent. Antioxidants, phosphorus antioxidants, amine antioxidants, antioxidants composed of amine-aldehyde condensates, antioxidants composed of amine-ketone condensates, and the like. Of these antioxidants, in order to achieve the effects of the present invention without deteriorating the function of the positive resist composition, an antioxidant comprising a phenolic antioxidant and an organic acid derivative is used as the antioxidant. It is preferable to use an agent.

  Here, as the phenolic antioxidant, substituted phenols such as 1-oxy-3-methyl-4-isopropylbenzene, 2,6-di-tert-butylphenol, 2,6-di-tert- Butyl-4-ethylphenol, 2,6-di-tert-butyl-4-methylphenol, 4-hydroxymethyl-2,6-di-tert-butylphenol, butyl hydroxyanisole, 2- (1-methyl (Cyclohexyl) -4,6-dimethylphenol, 2,4-dimethyl-6-tert-butylphenol, 2-methyl-4,6-dinonylphenol, 2,6-di-tert-butyl-α-dimethylamino- p-cresol, 6- (4-hydroxy-3,5-di-tert-butylanilino) 2,4-bisoctyl-thio-1,3,5-triazine, n-octyl Examples include decyl-3- (4′-hydroxy-3 ′, 5′-di-tert-butylphenyl) propionate, octylated phenol, aralkyl-substituted phenols, alkylated p-cresol, hindered phenol and the like. Bis, tris, polyphenols such as 4,4′-dihydroxy diphenyl, methylene bis (dimethyl-4,6-phenol), 2,2′-methylene-bis- (4-methyl-6-tert. -Butylphenol), 2,2'-methylene-bis- (4-methyl-6-cyclohexyl phenol), 2,2'-methylene-bis- (4-ethyl-6-tert-butylphenol), 4,4 '-Methylene-bis- (2,6-di-tert-butylphenol), 2,2'-methylene-bis- (6-alphamethyl-benzyl-p -Cresol), methylene-bridged polyvalent alkylphenol, 4,4'-butylidenebis- (3-methyl-6-tert-butylphenol), 1,1-bis- (4-hydroxyphenyl) -cyclohexane, 2,2 ' -Dihydroxy-3,3'-di- (α-methylcyclohexyl) -5,5'-dimethyl diphenylmethane, alkylated bisphenol, hindered bisphenol, 1,3,5-trimethyl-2,4,6-tris ( 3,5-di-tert-butyl-4-hydroxybenzyl) benzene, tris- (2-methyl-4-hydroxy-5-tert-butylphenyl) butane, tetrakis- [methylene-3- (3 ′, 5'-di-tert-butyl-4'-hydroxyphenyl) propionate] methane and the like.

  Preferable specific examples of the antioxidant used in the present invention include 2,6-di-t-butyl-4-methylphenol, 4-hydroxymethyl-2,6-di-t-butylphenol, and 2,2′-methylenebis. (4-methyl-6-tert-butylphenol), butylhydroxyanisole, t-butylhydroquinone, 2,4,5-trihydroxybutyrophenone, nordihydroguaiaretic acid, propyl gallate, octyl gallate, lauryl gallate, And isopropyl citrate. Of these, 2,6-di-t-butyl-4-methylphenol, 4-hydroxymethyl-2,6-di-t-butylphenol, butylhydroxyanisole and t-butylhydroquinone are preferable, and 2,6-di- -T-Butyl-4-methylphenol or 4-hydroxymethyl-2,6-di-t-butylphenol is more preferred.

  The content of the antioxidant is preferably 1 ppm or more in the positive resist composition, more preferably 5 ppm or more, still more preferably 10 ppm or more, and further preferably 50 ppm or more. More preferably 100 ppm or more, and particularly preferably 100 to 10,000 ppm. A plurality of antioxidants may be mixed and used.

[8] Pattern Forming Method The positive resist composition of the present invention is applied on a support such as a substrate to form a resist film. The thickness of the resist film is preferably 0.02 to 0.1 μm.
As a method of coating on the substrate, spin coating is preferable, and the rotation speed is preferably 1000 to 3000 rpm.

For example, a positive resist composition is coated on a substrate (eg, silicon / silicon dioxide coating) used for manufacturing a precision integrated circuit element by an appropriate coating method such as a spinner or a coater, and dried to form a resist film. Form. In addition, a known antireflection film can be applied in advance.
The resist film is irradiated with KrF, electron beam, X-ray, EUV or the like, preferably baked (heated) and developed. Thereby, a good pattern can be obtained.

In the development step, an alkaline developer is used as follows. Examples of the alkali developer for the positive resist composition include inorganic hydroxides such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, and primary amines such as ethylamine and n-propylamine. Secondary amines such as diethylamine and di-n-butylamine, tertiary amines such as triethylamine and methyldiethylamine, alcohol amines such as dimethylethanolamine and triethanolamine, tetramethylammonium hydroxide, tetraethylammonium hydroxide Alkaline aqueous solutions of cyclic amines such as quaternary ammonium salts such as pyrrole and pihelidine can be used.
Furthermore, alcohols and surfactants can be added in appropriate amounts to the alkaline developer.
The alkali concentration of the alkali developer is usually from 0.1 to 20% by mass.
The pH of the alkali developer is usually from 10.0 to 15.0.

EXAMPLES Hereinafter, although an Example demonstrates this invention further in detail, the content of this invention is not limited by this. In addition, Example 5, 9-11, 29, 35, 40, and 49 shall be read as a reference example.

(Synthesis Example 1) Synthesis of polymer (A-7)

4-acetoxystyrene 34.06 g (0.21 mol), monomer (mLA-30-Me) 30.00 g (0.09 mol), polymerization initiator V-601 (manufactured by Wako Pure Chemical Industries, Ltd.) 1.86 g ( 0.0075 mol) was dissolved in 119.58 g of propylene glycol monomethyl ether acetate. In a reaction vessel, 29.89 g of propylene glycol monomethyl ether acetate was added dropwise into an 80 ° C. system over 2 hours under a nitrogen gas atmosphere. After the dropping, the reaction solution was allowed to cool to room temperature after 6 hours of heating and stirring, and dropped into 2.5 L of hexane to precipitate a polymer, followed by filtration. The solid filtered with 500 mL of hexane was washed, and the filtered solid was dried under reduced pressure to obtain 57.65 g of 4-acetoxystyrene / (LA-30: B ₂ = Me) copolymer.

In a reaction vessel, 40.00 g of the polymer obtained above was dissolved in 92 mL of ethyl acetate and 92 mL of methanol, 39.05 g of a 28% methanol solution of sodium methoxide was added and stirred for 3 hours, and hydrochloric acid was added. Acidified. Ethyl acetate 500mL was added and it wash | cleaned 5 times with distilled water 200mL. The organic layer was taken out and concentrated, dissolved in 150 mL of methanol, and dropped into 1.5 L of distilled water / methanol = 7/3 to precipitate a polymer, followed by filtration. The solid filtered with 500 mL of distilled water / methanol = 7/3 was washed, and the filtered solid was dried under reduced pressure to give 4-hydroxystyrene / (LA-30: B ₂ = Me) copolymer as 32. 45 g was obtained. The weight average molecular weight by GPC was 11000 in terms of polystyrene, and the molecular weight dispersity (Mw / Mn) was 1.50.

  In a reaction vessel, 20.00 g of the above polymer was dissolved in 300 g of propylene glycol monomethyl ether acetate, and the solution was decompressed to 60 ° C. and 20 mmHg to distill off about 150 g of the solvent together with water remaining in the system. The mixture was cooled to 20 ° C., 2.74 g of ethyl vinyl ether and 5.6 mg of p-toluenesulfonic acid were added, and the mixture was stirred at room temperature for 2 hours. Thereafter, 0.06 g of triethylamine was added for neutralization, and 300 g of ethyl acetate and 100 g of water were added for washing operation three times. Thereafter, the amount of the solvent was adjusted to obtain a 30% by mass polymer solution. The weight average molecular weight by GPC was 13000 in terms of polystyrene, the molecular weight dispersion was 1.50, and the acetal protection rate of phenolic OH was 35% from 1H and 13C-NMR analysis.

  Resins having the compositions shown in Table 2 below were synthesized in the same manner as in Synthesis Example 1 except that the monomers and vinyl ethers used were changed. Each composition unit in Table 2 is as described above.

  The weight average molecular weight and the degree of dispersion (Mw / Mn) are GPC polystyrene conversion values.

  In Table 2, the structures used as the units (IIIb) and (IIIc) of the resin (A) are shown below.

(1) Preparation and Coating of Positive Resist Composition Each component shown in Table 3 below is dissolved, and the resulting solution is microfiltered with a 0.1 μm pore membrane filter to obtain a positive resist composition. It was.
The total solid content is 7.0% by mass when used for patterning with a KrF excimer laser, 7.0% by mass when used for patterning with an electron beam, and 5.0% by mass when used for patterning with EUV. It was.

  Each component used in the examples and comparative examples is as follows.

<Organic basic compound>
Tri (n-butyl) amine C3-2; tri (n-octyl) amine C3-3; tri (n-dodecyl) amine C3-4; dicyclohexylmethylamine C3-5; dicyclohexylethylamine C3-6; Tris [2- (2-methoxyethoxy) ethyl] amine C4-1; tetra- (n-butyl) ammonium hydroxide C4-2; tetra- (n-octyl) ammonium hydroxide <surfactant>
W-1; Megafuck F176 (Dainippon Ink Chemical Co., Ltd.)
W-2; PF6320 (made by OMNOVA)
<Solvent>
D-1; propylene glycol monomethyl ether acetate (PGMEA)
D-2; propylene glycol monomethyl ether (PGME)
D-3; ethyl lactate D-4; methyl amyl ketone

(2) Formation and evaluation of resist pattern (KrF)
On an 8-inch silicon wafer, an antireflection film DUV-42 manufactured by Nissan Chemical Co., Ltd. was baked at 200 ° C. for 60 seconds using a spin coater ACT8 manufactured by Tokyo Electron to obtain a film having an average film thickness of 60 nm. Thereafter, the positive resist composition was applied onto this film and baked at 120 ° C. for 60 seconds to obtain a film having an average film thickness of 300 nm.
The obtained resist film was subjected to pattern exposure using a KrF excimer laser scanner (PAS5500 / 850C manufactured by ASML, wavelength 248 nm, NA = 0.80, Annular 0.80 / 0.30). The reticle used here was a 6% halftone mask.

  After exposure, it was baked at 120 ° C. for 60 seconds, developed with an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution for 60 seconds, rinsed with water for 30 seconds and dried. The obtained pattern was evaluated by the following method.

(2-1) Sensitivity When the hole diameter of the obtained pattern was observed with a scanning electron microscope (S-9260 manufactured by Hitachi, Ltd.) and a 150 nm hole (mask size was 180 nm, Pitch = 250 nm) was resolved. Irradiation energy was defined as sensitivity (Eopt).

(2-2) Exposure dose dependency (EL)
The hole size with respect to the exposure dose is measured by the same method as described above, and the exposure dose that is ± 10% of the target hole size of 150 nm, that is, 135 nm and 165 nm is obtained, and the exposure dose dependency defined by the following equation: (EL) was calculated. Larger values indicate better exposure dose dependency.
[EL (%)] = [(exposure amount to be 165 nm) − (exposure amount to 135 nm)] / (Eopt)

(2-3) Focus margin (DOF)
At the sensitivity obtained in (2-1), exposure is performed while shifting the focus, and the hole size with respect to the focus is measured by the same method as described above. The range in which the obtained size falls was defined as the focus margin (DOF) (μm). A larger value indicates a wider focus margin (DOF).

(2-4) Shape In the sensitivity obtained in (2-1), the side wall of the resist pattern of the isolated hole at a mask size of 170 nm and Duty = 1: 10 was observed with a scanning electron microscope (S-4800 manufactured by Hitachi, Ltd.). Then, the following five-step evaluation was performed.
A: When the pattern side wall is very clean and the side wall verticality is not less than 85 degrees and not more than 90 degrees B: When the pattern side wall is very clean and the side wall verticality is not less than 80 degrees and less than 85 degrees, or the pattern side wall is slightly rough When the verticality of the sidewall is 85 degrees or more and 90 degrees or less C: When the pattern sidewall is slightly rough and the sidewall verticality is 80 degrees or more and less than 85 degrees D: When the pattern sidewall is slightly rough and the perpendicularity of the sidewall is less than 80 degrees Or when the pattern side wall is very rough and the verticality of the side wall is 80 degrees or more and less than 85 degrees E: When the pattern side wall is very rough and the verticality of the side wall is less than 80 degrees

(2-5) Mask Error Enhancement Factor (MEEF) Performance The mask size is changed from 175 nm to 185 nm with a mask size of 180 nm and a mask pattern of Pitch = 250 nm and a resist pattern of 180 nm can be obtained, and Pitch = 250 nm is fixed. The slope of the change in size of the resist pattern when the size was changed was defined as MEEF. That is, the slope of the linear approximation when the resist pattern size is measured at mask sizes of 175 nm, 178 nm, 180 nm, 182 nm, and 185 nm, and the mask size is plotted on the horizontal axis and the resist pattern size is plotted on the vertical axis.

(2-6) Development defect (2) Under the same conditions as the formation of the resist pattern, with a mask pattern having a mask size of 170 nm and a pitch of 280 nm, a 140 nm pattern can be formed on the wafer surface 78 with a resist pattern having a hole size of 140 nm. The part was exposed. The number of development defects of the obtained patterned wafer was measured with KLA-2360 manufactured by KLA-Tencor Corporation. In this case, the inspection area was 205 cm ² in total, the pixel size was 0.25 μm, the threshold = 30, and the inspection light was visible light. A value obtained by dividing the obtained numerical value by the inspection area was evaluated as the number of defects (pieces / cm ² ).

  The evaluation results of Examples 1 to 20 and Comparative Examples 1 and 2 are shown in Table 4 below.

  From Table 4, the positive resist composition of the present invention has an exposure dose dependency (EL) and a focus margin (DOF) as compared with the case of using the resin of the comparative example with respect to pattern formation by KrF excimer laser exposure. It can be seen that the performance, shape, mask error enhancement factor (MEEF) performance, and development defects are good.

(3) Pattern production and evaluation (electron beam)
Each component shown in Table 5 below was dissolved, and the resulting solution was microfiltered with a membrane filter having a pore size of 0.1 μm to obtain a positive resist composition.
This positive resist composition was applied onto a silicon wafer subjected to hexamethyldisilazane treatment using a spin coater Mark8 manufactured by Tokyo Electron, and baked at 120 ° C. for 60 seconds to obtain a film having an average film thickness of 300 nm.
The resist film was irradiated with an electron beam using an electron beam drawing apparatus (HL750 manufactured by Hitachi, Ltd., acceleration voltage 50 keV). After irradiation, it was baked at 120 ° C. for 60 seconds, developed with an aqueous 2.38 mass% tetramethylammonium hydroxide (TMAH) solution for 60 seconds, rinsed with water for 30 seconds and dried. The obtained pattern was evaluated by the following method.

(3-1) Sensitivity Irradiation energy when a 150 nm line was obtained by a 150 nm line (line: space = 1: 1) in patterning by electron beam irradiation was defined as sensitivity. The line width was determined by observing with a scanning electron microscope (S-9260 manufactured by Hitachi, Ltd.).

(3-2) Evaluation of resolving power In the exposure amount indicating the sensitivity obtained in (3-1), the number of lines: space = 1: 1 pattern is observed with a scanning electron microscope in the same manner as described above. did.

(3-3) LWR evaluation In the sensitivity obtained in (3-1), a line pattern in which a 150 nm line (line: space = 1: 1) is finished to 150 nm is observed with a scanning microscope (Hitachi, S9260). Then, in the range of the edge of 2 μm in the longitudinal direction of the line pattern, the distance from the reference line where the edge should be was measured at 50 points, and the standard deviation was obtained to calculate 3σ. A smaller value indicates better performance.

(3-4) Shape In the exposure amount showing the sensitivity obtained in (3-1), a 150 nm line was obtained by a 150 nm line (line: space = 1: 1). The side wall of the resist pattern was observed with a scanning electron microscope (Hitachi S-4800). The evaluation is the same as the evaluation with KrF.

(3-5) Development defect A positive resist composition was uniformly applied on an 8-inch silicon substrate subjected to hexamethyldisilazane treatment by a spin coater, and heated and dried on a hot plate at 120 ° C. for 60 seconds. A 300 nm resist film was formed. This resist film was heated on a hot plate at 120 ° C. for 60 seconds without exposure. Further, the resist film was developed with an aqueous 2.38 mass% tetramethylammonium hydroxide solution at 23 ° C. for 60 seconds, rinsed with pure water for 30 seconds, and then dried. The number of development defects of the sample wafer thus obtained was measured using KLA-2360 manufactured by KLA-Tencor Corporation. In this case, the inspection area was 254 cm ² in total, the pixel size was 0.25 μm, the threshold = 30, and visible light was used as the inspection light. A value obtained by dividing the obtained numerical value by the inspection area was evaluated as the number of defects (pieces / cm ² ).

  The evaluation results of Examples 21 to 35 and Comparative Examples 3 and 4 are shown in Table 6 below.

  From the results of Table 6, the positive resist composition of the present invention has high sensitivity and high resolution as compared to the case of using the resin of the comparative example with respect to pattern formation by electron beam irradiation, and excellent pattern shape. Furthermore, it turns out that it is excellent in LWR performance.

(4) Pattern production and evaluation (EUV)
Each component shown in the following Table 7 was dissolved, and the resulting solution was microfiltered with a membrane filter having a pore size of 0.1 μm to obtain a positive resist composition.
This positive resist composition was applied onto a silicon wafer subjected to hexamethyldisilazane treatment using a spin coater Mark8 manufactured by Tokyo Electron, and baked at 120 ° C. for 60 seconds to obtain a film having an average film thickness of 150 nm.
The obtained resist film is exposed using EUV light (wavelength 13 nm: EUVES, manufactured by Litho Track Japan Co., Ltd.) while changing the exposure amount by 0.5 mJ in the range of 0 to 20.0 mJ. Baked for a second. Then, using a 2.38 mass% tetramethylammonium hydroxide (TMAH) aqueous solution, the dissolution rate at each exposure amount was measured to obtain a sensitivity curve.

(4-1) Sensitivity and resolution (dissolution contrast)
In this sensitivity curve, the exposure amount when the dissolution rate of the resist is saturated is regarded as sensitivity, and the dissolution contrast (γ value) is calculated from the gradient at the portion where the slope of the tangent of the sensitivity curve is maximized as an index of resolving power. . The larger the γ value, the better the dissolution contrast and the higher the resolution.

(4-2) Development defects The photosensitive resin composition is uniformly applied on an 8-inch silicon substrate subjected to hexamethyldisilazane treatment by a spin coater, and heated and dried on a hot plate at 120 ° C. for 60 seconds. A resist film having a thickness of 150 nm was formed. This resist film was heated on a hot plate at 120 ° C. for 60 seconds without exposure. Further, the resist film was developed with an aqueous 2.38 mass% tetramethylammonium hydroxide solution at 23 ° C. for 60 seconds, rinsed with pure water for 30 seconds, and then dried. The number of development defects of the sample wafer thus obtained was measured using KLA-2360 manufactured by KLA-Tencor Corporation. In this case, the inspection area was 254 cm ² in total, the pixel size was 0.25 μm, the threshold = 30, and visible light was used as the inspection light. A value obtained by dividing the obtained numerical value by the inspection area was evaluated as the number of defects (pieces / cm ² ).

  The evaluation results of Examples 36 to 50 and Comparative Examples 5 and 6 are shown in Table 8 below.

  From Table 8, it can be seen that the positive resist composition of the present invention has less development defects, high sensitivity, and high dissolution contrast as compared with the case where the resin of the comparative example is used for pattern formation by EUV exposure.

  As described above, the positive resist composition of the present invention showed good results even by EUV irradiation.

Claims (9)

(A) a resin that is decomposed by the action of an acid and has increased solubility in an alkaline developer;
(B) A resin that contains a compound that generates an acid upon irradiation with actinic rays or radiation, and that is decomposed by the action of the acid (A) and has increased solubility in an alkaline developer is represented by the following general formula (II a A positive resist composition comprising a repeating unit containing a group represented by formula (III), a repeating unit represented by the following general formula (IIIa), and a repeating unit represented by the following general formula (A1).

In general formula (IIa):
V represents a group having a lactone structure.
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
n represents the number of repetitions and represents an integer of 1 to 5.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
In general formula (IIIa):
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
m is the number of substituents and represents an integer of 0 to 4.
In general formula (A1),
n represents an integer of 1 to 3. m shows the integer of 0-3. However, m + n ≦ 5.
A ₁ represents a group having a group capable of leaving by the action of an acid or a group decomposing by the action of an acid.
S ₁ represents an arbitrary substituent, and when there are a plurality of S _{1 s} , they may be the same or different.
B ₁ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group. The positive resist composition according to claim 1, wherein the repeating unit represented by the general formula (IIIa) of the resin (A) is a repeating unit represented by the following formula (IIIb). .

  The positive resist composition according to claim 1, wherein the repeating unit represented by the general formula (IIIa) of the resin (A) is a repeating unit represented by the following formula (IIIc). .

The repeating unit containing a group represented by the general formula (II a ) of the resin (A) is a repeating unit represented by the following general formula (IIb). The positive resist composition according to any one of the above.

In general formula (IIb):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₂ represents an alkylene group, and when there are a plurality of R ₂ groups, they may be the same or different.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
Y represents an electron withdrawing group, and when there are a plurality of groups, they may be the same or different.
Z represents a single bond, an ether bond, an ester bond, an amide bond, a urethane bond or a urea bond, and when there are a plurality thereof, they may be the same or different.
k is the number of substituents and represents an integer of 0 to 8.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7. The repeating unit containing a group represented by the general formula (II a ) of the resin (A) is a repeating unit represented by the following general formula (IIc). The positive resist composition according to any one of the above.

In general formula (IIc):
B ₂ is a hydrogen atom, alkyl group, hydroxyl group, alkoxy group, halogen atom, cyano group, nitro group, acyl group, acyloxy group, cycloalkyl group, aryl group, carboxyl group, alkyloxycarbonyl group, alkylcarbonyloxy group or Represents an aralkyl group.
R ₃ represents an alkyl group or a cycloalkyl group, and when there are a plurality of them, they may be the same or different. When there are a plurality of R _{3 s,} two R 3s may be bonded to form a ring.
X represents an alkylene group, an oxygen atom, or a sulfur atom.
k is the number of substituents and represents an integer of 0 to 8.
p represents the number of repetitions and represents an integer of 1 to 5.
n represents the number of repetitions and represents an integer of 1 to 5.
m is the number of substituents and represents an integer of 1 to 7.   6. The positive electrode according to claim 1, wherein the compound (B) contains at least one compound selected from triarylsulfonium salts, diazodisulfone derivatives and oxime esters of organic sulfonic acids. Type resist composition.   The compound (B) contains at least one compound selected from triarylsulfonium salts, and at least one compound selected from diazodisulfone derivatives and oxime esters of organic sulfonic acids. The positive resist composition as described in any one of -6. A resist film formed from the positive resist composition according to claim 1. Exposing Les resist film according to claim 8, a pattern forming method characterized by comprising the step of developing.