WO2009063638A1 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
WO2009063638A1
WO2009063638A1 PCT/JP2008/003307 JP2008003307W WO2009063638A1 WO 2009063638 A1 WO2009063638 A1 WO 2009063638A1 JP 2008003307 W JP2008003307 W JP 2008003307W WO 2009063638 A1 WO2009063638 A1 WO 2009063638A1
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WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
side electrode
emitting element
emitting device
Prior art date
Application number
PCT/JP2008/003307
Other languages
English (en)
French (fr)
Inventor
Hidenori Kamei
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN200880115866XA priority Critical patent/CN101855734B/zh
Priority to EP08849487A priority patent/EP2219232A1/en
Priority to JP2009541047A priority patent/JP5143140B2/ja
Priority to US12/742,559 priority patent/US20100252855A1/en
Publication of WO2009063638A1 publication Critical patent/WO2009063638A1/ja

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    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
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    • H01L33/64—Heat extraction or cooling elements
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Abstract

【課題】基板の一方に発光層を形成し、発光層を形成した同じ側にｎ側電極とｐ側電極を形成した半導体発光装置では、半導体発光素子の発熱を、サブマウントに逃がす必要がある。しかし、電極の大きさや形状がさまざまな半導体発光素子にあわせて逐次放熱を兼ねた接続手段を作製し、管理するのは煩雑すぎるという課題があった。 【解決手段】ｎ側電極の近傍のｐ側バンプの形成密度を高める。その結果、半導体発光素子とサブマウントのｎ側電極近傍での熱伝導面積が増加し、放熱効果が高まる。
PCT/JP2008/003307 2007-11-15 2008-11-13 半導体発光装置 WO2009063638A1 (ja)

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EP08849487A EP2219232A1 (en) 2007-11-15 2008-11-13 Semiconductor light emitting device
JP2009541047A JP5143140B2 (ja) 2007-11-15 2008-11-13 半導体発光装置
US12/742,559 US20100252855A1 (en) 2007-11-15 2008-11-13 Semiconductor light-emitting device

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JP2011238537A (ja) * 2010-05-12 2011-11-24 Stanley Electric Co Ltd 照明装置
WO2012026182A1 (ja) * 2010-08-26 2012-03-01 シャープ株式会社 半導体発光素子の実装方法
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JP2018107371A (ja) * 2016-12-28 2018-07-05 日亜化学工業株式会社 発光装置及びその製造方法
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WO2023153212A1 (ja) * 2022-02-09 2023-08-17 株式会社小糸製作所 投光器、及び測定装置

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