WO2009057311A1 - 半導体発光素子およびそれを用いた半導体発光装置 - Google Patents

半導体発光素子およびそれを用いた半導体発光装置 Download PDF

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Publication number
WO2009057311A1
WO2009057311A1 PCT/JP2008/003118 JP2008003118W WO2009057311A1 WO 2009057311 A1 WO2009057311 A1 WO 2009057311A1 JP 2008003118 W JP2008003118 W JP 2008003118W WO 2009057311 A1 WO2009057311 A1 WO 2009057311A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
side electrode
substrate
electrode
Prior art date
Application number
PCT/JP2008/003118
Other languages
English (en)
French (fr)
Inventor
Atsuhiro Hori
Hidenori Kamei
Syuusaku Maeda
Original Assignee
Panasonic Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corporation filed Critical Panasonic Corporation
Priority to CN200880112223.XA priority Critical patent/CN101828277B/zh
Priority to EP08843702A priority patent/EP2207210A1/en
Priority to US12/739,295 priority patent/US8309975B2/en
Priority to JP2009538946A priority patent/JPWO2009057311A1/ja
Publication of WO2009057311A1 publication Critical patent/WO2009057311A1/ja

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

【課題】導電性基板の一方に発光層を形成し、発光層を形成した同じ側にｎ型電極とｐ型電極を形成した半導体発光装置では、投入電力が大きくなるとｎ側電極の近傍で発熱が生じ発光効率が低下するという課題があった。 【解決手段】ｎ側電極を基板の角部または縁に沿った一定の長さを有する形状とし、ｎ側電極から基板への電流を分散させ、ｎ側電極近傍での発熱を回避する。このタイプの半導体発光素子は、ｎ側電極の存在は発光面積を減少させる。そのため、ｎ側電極長は基板全周長の２０％以上５０％以下にするのが好適である。
PCT/JP2008/003118 2007-11-01 2008-10-30 半導体発光素子およびそれを用いた半導体発光装置 WO2009057311A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
CN200880112223.XA CN101828277B (zh) 2007-11-01 2008-10-30 半导体发光器件及使用它的半导体发光装置
EP08843702A EP2207210A1 (en) 2007-11-01 2008-10-30 Semiconductor light emitting element and semiconductor light emitting device using the same
US12/739,295 US8309975B2 (en) 2007-11-01 2008-10-30 Semiconductor light emitting element and semiconductor light emitting device using the same
JP2009538946A JPWO2009057311A1 (ja) 2007-11-01 2008-10-30 半導体発光素子およびそれを用いた半導体発光装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007285000 2007-11-01
JP2007-285000 2007-11-01

Publications (1)

Publication Number Publication Date
WO2009057311A1 true WO2009057311A1 (ja) 2009-05-07

Family

ID=40590650

Family Applications (2)

Application Number Title Priority Date Filing Date
PCT/JP2008/002558 WO2009057241A1 (ja) 2007-11-01 2008-09-17 半導体発光素子およびそれを用いた半導体発光装置
PCT/JP2008/003118 WO2009057311A1 (ja) 2007-11-01 2008-10-30 半導体発光素子およびそれを用いた半導体発光装置

Family Applications Before (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/002558 WO2009057241A1 (ja) 2007-11-01 2008-09-17 半導体発光素子およびそれを用いた半導体発光装置

Country Status (7)

Country Link
US (1) US8309975B2 (ja)
EP (1) EP2207210A1 (ja)
JP (1) JPWO2009057311A1 (ja)
KR (1) KR20100072057A (ja)
CN (1) CN101828277B (ja)
TW (1) TW200931686A (ja)
WO (2) WO2009057241A1 (ja)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011187670A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 半導体発光素子
JP2012074748A (ja) * 2012-01-16 2012-04-12 Toshiba Corp 半導体発光素子
JP2012530374A (ja) * 2009-06-18 2012-11-29 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー コンタクトが凹凸面上に形成された半導体発光デバイス
JP2013510422A (ja) * 2009-11-06 2013-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ フリップチップｌｅｄのためのシリコーンベースの反射性アンダーフィル及び熱カプラ
US9373764B2 (en) 2012-12-26 2016-06-21 Toyoda Gosei Co., Ltd. Semiconductor light emitting element

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2010146808A1 (ja) * 2009-06-18 2012-11-29 パナソニック株式会社 窒化ガリウム系化合物半導体発光ダイオード
JP5639626B2 (ja) * 2012-01-13 2014-12-10 シャープ株式会社 半導体発光素子及び電極成膜方法
US20190214514A1 (en) * 2016-07-05 2019-07-11 Lg Innotek Co., Ltd. Semiconductor element
TWI658307B (zh) * 2017-10-30 2019-05-01 錼創科技股份有限公司 發光二極體顯示器
KR102526036B1 (ko) * 2018-02-02 2023-04-26 엘지전자 주식회사 반도체 발광소자를 이용한 차량용 램프
JP7218048B2 (ja) * 2018-05-24 2023-02-06 スタンレー電気株式会社 半導体発光装置及びその製造方法
CN110535027A (zh) * 2019-09-05 2019-12-03 西安航空学院 用于制造光电子半导体组件的方法和光电子半导体组件

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221529A (ja) * 2002-10-03 2004-08-05 Nichia Chem Ind Ltd 発光ダイオード
JP2006073618A (ja) * 2004-08-31 2006-03-16 Toyoda Gosei Co Ltd 光学素子およびその製造方法
JP2006156590A (ja) * 2004-11-26 2006-06-15 Mitsubishi Cable Ind Ltd 発光ダイオード
JP2006287193A (ja) * 2005-03-30 2006-10-19 Samsung Electro Mech Co Ltd 窒化物半導体発光素子
JP2007116153A (ja) * 2005-10-17 2007-05-10 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子
JP2007134443A (ja) * 2005-11-09 2007-05-31 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード
JP2007281426A (ja) * 2006-04-04 2007-10-25 Samsung Electro-Mechanics Co Ltd 窒化物系半導体発光素子

Family Cites Families (9)

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Publication number Priority date Publication date Assignee Title
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
US6828596B2 (en) * 2002-06-13 2004-12-07 Lumileds Lighting U.S., Llc Contacting scheme for large and small area semiconductor light emitting flip chip devices
CN100461467C (zh) * 2002-10-03 2009-02-11 日亚化学工业株式会社 发光二极管
US20060001035A1 (en) * 2004-06-22 2006-01-05 Toyoda Gosei Co., Ltd. Light emitting element and method of making same
KR100506743B1 (ko) 2004-09-17 2005-08-08 삼성전기주식회사 트랜지스터를 구비한 플립칩 구조 발광장치용 서브 마운트
US20060131708A1 (en) * 2004-12-16 2006-06-22 Ng Kee Y Packaged electronic devices, and method for making same
KR100647018B1 (ko) 2005-09-26 2006-11-23 삼성전기주식회사 질화물계 반도체 발광소자
WO2007055262A1 (ja) 2005-11-09 2007-05-18 Mitsubishi Cable Industries, Ltd. 窒化物半導体発光ダイオード素子
JP2007266427A (ja) 2006-03-29 2007-10-11 Matsushita Electric Ind Co Ltd 半導体発光装置および製造方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004221529A (ja) * 2002-10-03 2004-08-05 Nichia Chem Ind Ltd 発光ダイオード
JP2006073618A (ja) * 2004-08-31 2006-03-16 Toyoda Gosei Co Ltd 光学素子およびその製造方法
JP2006156590A (ja) * 2004-11-26 2006-06-15 Mitsubishi Cable Ind Ltd 発光ダイオード
JP2006287193A (ja) * 2005-03-30 2006-10-19 Samsung Electro Mech Co Ltd 窒化物半導体発光素子
JP2007116153A (ja) * 2005-10-17 2007-05-10 Samsung Electro Mech Co Ltd 窒化物系半導体発光素子
JP2007134443A (ja) * 2005-11-09 2007-05-31 Mitsubishi Cable Ind Ltd 窒化物半導体発光ダイオード
JP2007281426A (ja) * 2006-04-04 2007-10-25 Samsung Electro-Mechanics Co Ltd 窒化物系半導体発光素子

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012530374A (ja) * 2009-06-18 2012-11-29 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー コンタクトが凹凸面上に形成された半導体発光デバイス
CN105720177A (zh) * 2009-06-18 2016-06-29 飞利浦拉米尔德斯照明设备有限责任公司 具有形成在有纹理的表面上的接触部的半导体发光器件
JP2013510422A (ja) * 2009-11-06 2013-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ フリップチップｌｅｄのためのシリコーンベースの反射性アンダーフィル及び熱カプラ
KR101833786B1 (ko) * 2009-11-06 2018-03-14 루미리즈 홀딩 비.브이. 플립 칩 ｌｅｄ를 위한 실리콘 기반 반사성 언더필 및 열 커플러
JP2011187670A (ja) * 2010-03-08 2011-09-22 Toshiba Corp 半導体発光素子
US8461615B2 (en) 2010-03-08 2013-06-11 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9159878B2 (en) 2010-03-08 2015-10-13 Kabushiki Kaisha Toshiba Semiconductor light emitting device
JP2012074748A (ja) * 2012-01-16 2012-04-12 Toshiba Corp 半導体発光素子
US9373764B2 (en) 2012-12-26 2016-06-21 Toyoda Gosei Co., Ltd. Semiconductor light emitting element

Also Published As

Publication number Publication date
EP2207210A1 (en) 2010-07-14
US8309975B2 (en) 2012-11-13
CN101828277A (zh) 2010-09-08
CN101828277B (zh) 2012-03-07
TW200931686A (en) 2009-07-16
US20100258837A1 (en) 2010-10-14
JPWO2009057311A1 (ja) 2011-03-10
WO2009057241A1 (ja) 2009-05-07
KR20100072057A (ko) 2010-06-29

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