WO2009041182A1 - Ag電極ペースト、太陽電池セルおよびその製造方法 - Google Patents
Ag電極ペースト、太陽電池セルおよびその製造方法 Download PDFInfo
- Publication number
- WO2009041182A1 WO2009041182A1 PCT/JP2008/064705 JP2008064705W WO2009041182A1 WO 2009041182 A1 WO2009041182 A1 WO 2009041182A1 JP 2008064705 W JP2008064705 W JP 2008064705W WO 2009041182 A1 WO2009041182 A1 WO 2009041182A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode
- battery cell
- solar battery
- weight
- producing
- Prior art date
Links
- 239000002003 electrode paste Substances 0.000 title abstract 5
- 238000000034 method Methods 0.000 title abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 abstract 2
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 239000002245 particle Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Sustainable Development (AREA)
- Inorganic Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Sustainable Energy (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
- Photovoltaic Devices (AREA)
Abstract
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
ES08834130.0T ES2615580T3 (es) | 2007-09-27 | 2008-08-18 | Pasta de electrodo de Ag, celda de batería solar, y proceso para producir la celda de batería solar |
CN2008801084384A CN101809758B (zh) | 2007-09-27 | 2008-08-18 | Ag电极浆料、太阳电池单元及其制造方法 |
EP08834130.0A EP2200091B1 (en) | 2007-09-27 | 2008-08-18 | Ag electrode paste, solar battery cell, and process for producing the solar battery cell |
JP2009534237A JP5278707B2 (ja) | 2007-09-27 | 2008-08-18 | Ag電極ペースト、太陽電池セルおよびその製造方法 |
US12/730,392 US20100170568A1 (en) | 2007-09-27 | 2010-03-24 | Ag electrode paste, solar battery cell, and method of manufacturing the same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-251609 | 2007-09-27 | ||
JP2007251609 | 2007-09-27 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US12/730,392 Continuation US20100170568A1 (en) | 2007-09-27 | 2010-03-24 | Ag electrode paste, solar battery cell, and method of manufacturing the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009041182A1 true WO2009041182A1 (ja) | 2009-04-02 |
Family
ID=40511076
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/064705 WO2009041182A1 (ja) | 2007-09-27 | 2008-08-18 | Ag電極ペースト、太陽電池セルおよびその製造方法 |
Country Status (8)
Country | Link |
---|---|
US (1) | US20100170568A1 (ja) |
EP (1) | EP2200091B1 (ja) |
JP (1) | JP5278707B2 (ja) |
KR (1) | KR101092142B1 (ja) |
CN (1) | CN101809758B (ja) |
ES (1) | ES2615580T3 (ja) |
TW (1) | TW200926210A (ja) |
WO (1) | WO2009041182A1 (ja) |
Cited By (18)
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CN101859609A (zh) * | 2010-04-21 | 2010-10-13 | 北京科技大学 | 一种无铅化银电极浆料及其制备与使用方法 |
CN101872652A (zh) * | 2010-05-26 | 2010-10-27 | 广东风华高新科技股份有限公司 | 无铅可耐焊全银导体浆料 |
WO2011013440A1 (ja) * | 2009-07-30 | 2011-02-03 | 株式会社ノリタケカンパニーリミテド | 太陽電池電極用無鉛導電性組成物 |
JP2011061109A (ja) * | 2009-09-14 | 2011-03-24 | Shin-Etsu Chemical Co Ltd | 太陽電池素子の製造方法及び太陽電池素子 |
KR20110074392A (ko) * | 2009-12-24 | 2011-06-30 | 엘지이노텍 주식회사 | 고효율 실리콘 태양전지 전면전극 형성용 페이스트 조성물 및 이를 포함하는 실리콘 태양전지 |
WO2011111192A1 (ja) * | 2010-03-10 | 2011-09-15 | 三菱電機株式会社 | 太陽電池セルの電極形成方法及び太陽電池セル |
JP2011211080A (ja) * | 2010-03-30 | 2011-10-20 | Sanyo Electric Co Ltd | 太陽電池セル及び太陽電池モジュール |
KR101089018B1 (ko) | 2010-12-07 | 2011-12-01 | 현대중공업 주식회사 | 태양전지의 전면전극 형성방법 |
EP2433306A1 (en) * | 2009-05-20 | 2012-03-28 | E. I. du Pont de Nemours and Company | Process of forming a grid electrode on the front-side of a silicon wafer |
EP2433304A1 (en) * | 2009-05-20 | 2012-03-28 | E. I. du Pont de Nemours and Company | Process of forming a grid electrode on the front-side of a silicon wafer |
EP2433305A1 (en) * | 2009-05-20 | 2012-03-28 | E. I. du Pont de Nemours and Company | Process of forming a grid electrode on the front-side of a silicon wafer |
JP2012129407A (ja) * | 2010-12-16 | 2012-07-05 | Kyocera Corp | 太陽電池素子の製造方法 |
WO2012111478A1 (ja) * | 2011-02-18 | 2012-08-23 | 株式会社 村田製作所 | 導電性ペースト及び太陽電池 |
WO2012111477A1 (ja) * | 2011-02-18 | 2012-08-23 | 株式会社 村田製作所 | 導電性ペースト及び太陽電池 |
EP2315728B1 (en) * | 2008-06-26 | 2013-04-24 | E. I. du Pont de Nemours and Company | Glass compositions used in conductors for photovoltaic cells |
CN103310871A (zh) * | 2012-03-15 | 2013-09-18 | 江苏新源动力有限公司 | 一种太阳能电池用浆料及其制备方法 |
EP2398061A3 (en) * | 2010-06-21 | 2013-09-18 | Lg Electronics Inc. | Solar cell |
JP2015524996A (ja) * | 2012-04-18 | 2015-08-27 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | ニッケル金属間組成物を有する太陽電池接点 |
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US20110192316A1 (en) | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Electroless plating solution for providing solar cell electrode |
US20110195542A1 (en) | 2010-02-05 | 2011-08-11 | E-Chem Enterprise Corp. | Method of providing solar cell electrode by electroless plating and an activator used therein |
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US9227259B2 (en) * | 2012-08-22 | 2016-01-05 | International Business Machines Corporation | Increasing the efficiency of solar cells by transfer of solder |
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US9245663B2 (en) * | 2012-10-10 | 2016-01-26 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
JP5584846B1 (ja) * | 2012-12-20 | 2014-09-03 | 株式会社カネカ | 太陽電池およびその製造方法、ならびに太陽電池モジュール |
KR101518500B1 (ko) | 2012-12-21 | 2015-05-11 | 제일모직주식회사 | 유리프릿, 이를 포함하는 태양전지 전극용 페이스트 조성물 및 이로부터 제조된 전극 |
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WO2014104623A1 (ko) * | 2012-12-29 | 2014-07-03 | 제일모직 주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
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CN110379868A (zh) * | 2016-01-29 | 2019-10-25 | 亚特比目株式会社 | 太阳电池及太阳电池的制造方法 |
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CN107482071A (zh) * | 2017-07-24 | 2017-12-15 | 协鑫集成科技股份有限公司 | 异质结太阳能电池及其制备方法 |
KR102398002B1 (ko) * | 2017-09-25 | 2022-05-13 | 엘지전자 주식회사 | 태양 전지 및 이를 포함하는 태양 전지 패널 |
KR102406747B1 (ko) * | 2018-12-21 | 2022-06-08 | 창저우 퓨전 뉴 머티리얼 씨오. 엘티디. | 태양전지 전극 형성 방법 및 태양전지 |
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-
2008
- 2008-07-08 TW TW097125760A patent/TW200926210A/zh unknown
- 2008-08-18 ES ES08834130.0T patent/ES2615580T3/es active Active
- 2008-08-18 WO PCT/JP2008/064705 patent/WO2009041182A1/ja active Application Filing
- 2008-08-18 EP EP08834130.0A patent/EP2200091B1/en active Active
- 2008-08-18 CN CN2008801084384A patent/CN101809758B/zh active Active
- 2008-08-18 KR KR1020107009093A patent/KR101092142B1/ko active IP Right Grant
- 2008-08-18 JP JP2009534237A patent/JP5278707B2/ja active Active
-
2010
- 2010-03-24 US US12/730,392 patent/US20100170568A1/en not_active Abandoned
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Title |
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Cited By (29)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2315728B1 (en) * | 2008-06-26 | 2013-04-24 | E. I. du Pont de Nemours and Company | Glass compositions used in conductors for photovoltaic cells |
TWI504001B (zh) * | 2009-05-20 | 2015-10-11 | Du Pont | 在矽晶圓前側上形成柵極電極的方法 |
EP2433305A1 (en) * | 2009-05-20 | 2012-03-28 | E. I. du Pont de Nemours and Company | Process of forming a grid electrode on the front-side of a silicon wafer |
EP2433306A1 (en) * | 2009-05-20 | 2012-03-28 | E. I. du Pont de Nemours and Company | Process of forming a grid electrode on the front-side of a silicon wafer |
US9054239B2 (en) | 2009-05-20 | 2015-06-09 | E I Du Pont De Nemours And Company | Process of forming a grid electrode on the front-side of a silicon wafer |
EP2433304A1 (en) * | 2009-05-20 | 2012-03-28 | E. I. du Pont de Nemours and Company | Process of forming a grid electrode on the front-side of a silicon wafer |
JP2012527781A (ja) * | 2009-05-20 | 2012-11-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | シリコンウエハの前面にグリッド電極を形成する方法 |
TWI504011B (zh) * | 2009-05-20 | 2015-10-11 | Du Pont | 在矽晶圓前側上形成柵極電極之方法 |
JP2012527782A (ja) * | 2009-05-20 | 2012-11-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | シリコンウエハの前面にグリッド電極を形成する方法 |
JP2012527780A (ja) * | 2009-05-20 | 2012-11-08 | イー・アイ・デュポン・ドウ・ヌムール・アンド・カンパニー | シリコンウエハの前面上にグリッド電極を形成する方法 |
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EP2200091A4 (en) | 2012-01-18 |
KR101092142B1 (ko) | 2011-12-12 |
CN101809758A (zh) | 2010-08-18 |
TWI379314B (ja) | 2012-12-11 |
CN101809758B (zh) | 2012-02-29 |
JP5278707B2 (ja) | 2013-09-04 |
KR20100069699A (ko) | 2010-06-24 |
TW200926210A (en) | 2009-06-16 |
JPWO2009041182A1 (ja) | 2011-01-20 |
US20100170568A1 (en) | 2010-07-08 |
EP2200091B1 (en) | 2016-11-16 |
EP2200091A1 (en) | 2010-06-23 |
ES2615580T3 (es) | 2017-06-07 |
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