WO2012138186A3 - 전극 형성용 은 페이스트 조성물 및 이의 제조 방법 - Google Patents

전극 형성용 은 페이스트 조성물 및 이의 제조 방법 Download PDF

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Publication number
WO2012138186A3
WO2012138186A3 PCT/KR2012/002645 KR2012002645W WO2012138186A3 WO 2012138186 A3 WO2012138186 A3 WO 2012138186A3 KR 2012002645 W KR2012002645 W KR 2012002645W WO 2012138186 A3 WO2012138186 A3 WO 2012138186A3
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WIPO (PCT)
Prior art keywords
paste composition
electrode
silver paste
forming
preparing same
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PCT/KR2012/002645
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English (en)
French (fr)
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WO2012138186A2 (ko
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이수희
허수연
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주식회사 엘지화학
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Application filed by 주식회사 엘지화학 filed Critical 주식회사 엘지화학
Priority to US14/008,312 priority Critical patent/US20140020751A1/en
Priority to CN201280027854.8A priority patent/CN103582916B/zh
Priority to EP12768065.0A priority patent/EP2696352B1/en
Publication of WO2012138186A2 publication Critical patent/WO2012138186A2/ko
Publication of WO2012138186A3 publication Critical patent/WO2012138186A3/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/14—Conductive material dispersed in non-conductive inorganic material
    • H01B1/18—Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Conductive Materials (AREA)
  • Photovoltaic Devices (AREA)

Abstract

본 발명은 보다 향상된 인쇄성을 나타내며, 우수한 전기적 특성 및 에너지 변환 특성을 나타내는 태양전지용 전극의 형성을 가능케 하는 전극 형성용 은 페이스트 조성물 및 이의 제조 방법에 관한 것이다. 이러한 전극 형성용 은 페이스트 조성물은 은 분말, 유리 프릿 분말, 유기 바인더 및 카본블랙을 포함하며, 상기 카본블랙은 표면에 노출된 산소/탄소 원자비(O/C ratio)가 0.4 이상인 것이다.
PCT/KR2012/002645 2011-04-07 2012-04-06 전극 형성용 은 페이스트 조성물 및 이의 제조 방법 WO2012138186A2 (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US14/008,312 US20140020751A1 (en) 2011-04-07 2012-04-06 Ag paste composition for forming electrode and preparation method thereof
CN201280027854.8A CN103582916B (zh) 2011-04-07 2012-04-06 用于形成电极的银浆料组合物及其制备方法
EP12768065.0A EP2696352B1 (en) 2011-04-07 2012-04-06 Silver paste composition for forming an electrode, and method for preparing same

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
KR10-2011-0032244 2011-04-07
KR20110032244 2011-04-07
KR10-2012-0035794 2012-04-06
KR1020120035794A KR101497038B1 (ko) 2011-04-07 2012-04-06 전극 형성용 은 페이스트 조성물 및 이의 제조 방법

Publications (2)

Publication Number Publication Date
WO2012138186A2 WO2012138186A2 (ko) 2012-10-11
WO2012138186A3 true WO2012138186A3 (ko) 2013-01-10

Family

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PCT/KR2012/002645 WO2012138186A2 (ko) 2011-04-07 2012-04-06 전극 형성용 은 페이스트 조성물 및 이의 제조 방법

Country Status (6)

Country Link
US (1) US20140020751A1 (ko)
EP (1) EP2696352B1 (ko)
KR (1) KR101497038B1 (ko)
CN (1) CN103582916B (ko)
TW (1) TWI489492B (ko)
WO (1) WO2012138186A2 (ko)

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CN104078090B (zh) * 2013-03-28 2016-09-07 比亚迪股份有限公司 一种晶体硅太阳能电池用导电浆料及其制备方法
JP2015228191A (ja) * 2014-06-03 2015-12-17 カシオ計算機株式会社 コンテンツ出力システム、コンテンツ出力方法、コンテンツ出力プログラム、および通信端末
TW201618319A (zh) * 2014-11-07 2016-05-16 Taiwan Carbon Nano Technology Corp 用於太陽能電池製程之導電助劑及使用該導電助劑的導電漿料
CN109215842B (zh) * 2017-05-14 2021-10-26 吴彬 一种电阻率较低的导电银浆
KR101975497B1 (ko) * 2017-05-30 2019-05-07 주식회사 대유플러스 난연성 도료 조성물 제조방법
US20190092647A1 (en) * 2017-09-25 2019-03-28 Eastman Kodak Company Non-aqueous silver-containing dispersions
EP3687716A1 (en) * 2017-09-25 2020-08-05 Eastman Kodak Company Method of making silver-containing dispersions with nitrogenous bases
KR102178011B1 (ko) * 2018-11-30 2020-11-12 엘에스니꼬동제련 주식회사 응집도를 조절하는 은 분말의 제조방법
CN111128434A (zh) * 2019-12-16 2020-05-08 中国人民解放军国防科技大学 一种银电极及其制备方法
CN114550970B (zh) * 2022-02-11 2022-10-14 上海银浆科技有限公司 用于硅太阳能电池的正面银浆及其制法、硅太阳能电池的正面电极、硅太阳能电池

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Also Published As

Publication number Publication date
WO2012138186A2 (ko) 2012-10-11
CN103582916A (zh) 2014-02-12
KR20120115128A (ko) 2012-10-17
US20140020751A1 (en) 2014-01-23
EP2696352A2 (en) 2014-02-12
EP2696352A4 (en) 2014-09-10
CN103582916B (zh) 2016-06-01
TWI489492B (zh) 2015-06-21
EP2696352B1 (en) 2015-12-09
TW201303895A (zh) 2013-01-16
KR101497038B1 (ko) 2015-03-02

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