WO2009148259A2 - 전극형성용 금속 페이스트 조성물 및 이를 이용한 은-탄소 복합체 전극과 실리콘 태양전지 - Google Patents
전극형성용 금속 페이스트 조성물 및 이를 이용한 은-탄소 복합체 전극과 실리콘 태양전지 Download PDFInfo
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- WO2009148259A2 WO2009148259A2 PCT/KR2009/002951 KR2009002951W WO2009148259A2 WO 2009148259 A2 WO2009148259 A2 WO 2009148259A2 KR 2009002951 W KR2009002951 W KR 2009002951W WO 2009148259 A2 WO2009148259 A2 WO 2009148259A2
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- Prior art keywords
- carbon
- electrode
- silver
- paste composition
- metal paste
- Prior art date
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- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 27
- 239000010703 silicon Substances 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 23
- 239000002131 composite material Substances 0.000 title claims abstract description 20
- 230000015572 biosynthetic process Effects 0.000 title claims abstract description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 67
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- 239000003575 carbonaceous material Substances 0.000 claims abstract description 33
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- 239000000758 substrate Substances 0.000 claims description 23
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- 229910052799 carbon Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
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- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 11
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- XMWRBQBLMFGWIX-UHFFFAOYSA-N C60 fullerene Chemical class C12=C3C(C4=C56)=C7C8=C5C5=C9C%10=C6C6=C4C1=C1C4=C6C6=C%10C%10=C9C9=C%11C5=C8C5=C8C7=C3C3=C7C2=C1C1=C2C4=C6C4=C%10C6=C9C9=C%11C5=C5C8=C3C3=C7C1=C1C2=C4C6=C2C9=C5C3=C12 XMWRBQBLMFGWIX-UHFFFAOYSA-N 0.000 claims description 5
- 239000006230 acetylene black Substances 0.000 claims description 4
- 239000002134 carbon nanofiber Substances 0.000 claims description 4
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 4
- 239000002041 carbon nanotube Substances 0.000 claims description 4
- 229910003472 fullerene Inorganic materials 0.000 claims description 4
- 239000002063 nanoring Substances 0.000 claims description 4
- 239000002070 nanowire Substances 0.000 claims description 4
- 229910000464 lead oxide Inorganic materials 0.000 claims description 3
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- 229910000416 bismuth oxide Inorganic materials 0.000 claims 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 claims 2
- YEXPOXQUZXUXJW-UHFFFAOYSA-N oxolead Chemical compound [Pb]=O YEXPOXQUZXUXJW-UHFFFAOYSA-N 0.000 claims 2
- -1 and optionally Chemical compound 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 11
- 239000006229 carbon black Substances 0.000 description 8
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- 238000007650 screen-printing Methods 0.000 description 6
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- 150000003376 silicon Chemical class 0.000 description 4
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 3
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000001913 cellulose Substances 0.000 description 3
- 229920002678 cellulose Polymers 0.000 description 3
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229940116411 terpineol Drugs 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
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- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910020443 SiO2—PbO—B2O3 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
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- 229910052739 hydrogen Inorganic materials 0.000 description 1
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- CJJMLLCUQDSZIZ-UHFFFAOYSA-N oxobismuth Chemical class [Bi]=O CJJMLLCUQDSZIZ-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/18—Conductive material dispersed in non-conductive inorganic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/24—Conductive material dispersed in non-conductive organic material the conductive material comprising carbon-silicon compounds, carbon or silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Definitions
- the present invention relates to a metal paste composition for forming an electrode, and a silver-carbon composite electrode and a silicon solar cell using the same, and more particularly, to a metal paste composition which can be economically used for forming electrodes in various circuits or electronic products, and using the same. It relates to a silver-carbon composite electrode and a silicon solar cell which is one example in which the electrode can be used.
- the metal paste generally used comprises a conductive metal, a glass frit, an organic binder, and silver, aluminum, etc. are used as a conductive metal, and silver is mainly used here.
- conductive metal pastes are mainly used for mounting of hybrid ICs and semiconductor ICs, various capacitors and electrodes, and are widely used in advanced electronic products such as PCB, EL, touch panel, RFID, LCD, PDP, and solar cells.
- advanced electronic products such as PCB, EL, touch panel, RFID, LCD, PDP, and solar cells.
- Solar cells are classified into solar cells that generate steam required to rotate turbines using solar heat, and solar cells that convert photons into electrical energy using the properties of semiconductors. It refers to a solar cell (hereinafter referred to as a solar cell).
- Solar cells are largely classified into silicon solar cells, compound semiconductor solar cells, and tandem solar cells according to raw materials. Of these three types of solar cells, silicon solar cells are the mainstream in the solar cell market.
- a silicon solar cell includes a substrate 101 made of a p-type silicon semiconductor and an emitter layer 102 made of an n-type silicon semiconductor, and a diode is provided at an interface between the substrate 101 and the emitter layer 102. Similarly, pn junctions are formed.
- Electrons and electrons generated by the photovoltaic effect are attracted to the n-type silicon semiconductor and the p-type silicon semiconductor, respectively, and the front electrode 103 and the rear electrode 104 bonded to the lower portion of the substrate 101 and the upper portion of the emitter layer 102, respectively. ), And when the electrodes 103 and 104 are connected by wires, current flows.
- the conductive metal paste is used for manufacturing a front electrode or a back electrode in a solar cell, and is used for manufacturing various electrodes in other electronic products as described above.
- silver which is usually included in the conductive metal paste, has excellent conductivity but high price as a precious metal, which makes it difficult to commercialize the product.
- an object of the present invention is to provide a metal paste composition for forming an electrode that does not lower the electrical characteristics of a circuit or an electrode even if the content of silver is low, and a silver-carbon composite electrode and a silicon solar cell using the same.
- the metal paste composition for forming an electrode including the glass frit powder, the silver powder, and the organic binder according to an embodiment of the present invention for solving the above problems further comprises a carbon-based material powder,
- the content is characterized in that 20 parts by weight or less based on 100 parts by weight of the silver powder.
- the present invention provides a metal paste capable of forming a circuit or an electrode that does not lower the electrical conductivity even when the amount of silver used is reduced by using a carbon-based material in a specific content range.
- the electrode paste metal paste composition comprising a glass frit powder, silver powder, and an organic binder according to another embodiment of the present invention for solving the above problems, further comprises a carbon-based material powder, the carbon-based material
- the content of the powder is 25 parts by weight or less based on 100 parts by weight of the silver powder, and the silver particles of the silver powder are characterized in that the average particle diameter is 1 ⁇ m or less.
- the embodiment of the present invention further increases the content of the carbon-based material, and by using the silver powder composed of silver particles having a specific range of average particle diameter, thereby forming a circuit or electrode that does not degrade the electrical properties even if the amount of silver used A preferable metal paste which can be provided can be provided.
- Carbonaceous materials of the present invention described above are, for example, graphite, carbon black, acetylene black, denka black, canyon black, activated carbon, mesoporous carbon, carbon nanotubes, carbon nanofibers, carbon nanohorns, carbon nano rings, Carbon nanowires, fullerenes (C60) or super P may be used alone or in combination of two or more, but is not limited thereto.
- the present invention provides a silver-carbon composite electrode prepared by firing the above-described metal paste.
- the metal paste composition of the present invention described above can be used to form a front electrode of a silicon solar cell.
- FIG. 1 is a cross-sectional view showing a schematic structure of a silicon solar cell according to the prior art.
- Example 2 is a SEM photograph of an electrode made of a metal paste prepared according to Example 1 of the present invention.
- Example 3 is a SEM photograph of an electrode made of a metal paste prepared according to Example 2 of the present invention.
- Example 6 is a SEM photograph of a cross section of a silver-carbon composite electrode prepared according to Example 11 of the present invention.
- FIG. 8 is a graph illustrating the conductivity of the electrodes prepared according to Examples 11 to 14 of the present invention and comparing the results with those of FIG. 7.
- FIG. 9 is a cross-sectional view showing the structure of a silicon solar cell according to an embodiment of the present invention.
- the metal paste composition of the present invention may be used in a field where a conventional conductive metal paste is used, and for example, may be used in mounting of a hybrid IC, a semiconductor IC, various capacitors and electrodes, and more specifically, a PCB, an EL, and a touch panel. , RFID, LCD, PDP, solar cells, electrode materials for heat generating glass, etc., but is not limited thereto.
- One embodiment of the metal paste composition according to the present invention comprises a glass frit powder, silver powder, and an organic binder, in particular characterized in that it further comprises a carbon-based material powder in a specific content range.
- the carbonaceous material is used in place of a portion of silver (Ag) in the metal paste composition to allow a decrease in the content of silver, and does not lower the electrical conductivity of the circuit or electrode formed thereafter.
- the inventors of the present invention in the metal paste composition comprising the glass frit powder, silver powder, organic binder, and carbonaceous material powder according to the present invention, when the average particle diameter of the silver powder is adjusted to more than the content of the carbonaceous material It was confirmed that the electrical conductivity of the electrode formed of the metal paste composition did not decrease even by increasing.
- the carbon-based material usable in the present invention can be used without limitation as long as it is a conductive carbon-based material.
- a conductive carbon-based material For example, graphite, carbon black, acetylene black, denka black, canyon black, activated carbon, mesoporous carbon, carbon nanotubes Carbon nanofibers, carbon nanohorns, carbon nanorings, carbon nanowires, fullerenes (C60), or super P may be used alone or in combination of two or more thereof, but is not limited thereto.
- the content of the carbonaceous material is preferably 20 parts by weight or less based on 100 parts by weight of the silver powder. When it exceeds 20 parts by weight, the resistivity of the formed electrode becomes too high and cannot serve as an electrode.
- the lower limit of the content is not particularly limited as long as the carbon-based material according to the present invention is included in the metal paste to obtain the desired effect in the present invention.
- the amount may be 1 part by weight, preferably 0.1 part by weight, based on 100 parts by weight of silver powder, but the exemplary embodiment is not limited thereto.
- the content of the carbonaceous material is preferably 25 parts by weight or less based on 100 parts by weight of the silver powder.
- the resistivity of the formed electrode becomes too high and cannot serve as an electrode.
- the carbon-based material according to the present invention can be obtained only by being included in the metal paste, so that the lower limit of the content is not particularly limited.
- the amount may be 1 part by weight, preferably 0.1 part by weight, based on 100 parts by weight of silver powder, but the exemplary embodiment is not limited thereto.
- the silver particles of the silver powder have an average particle diameter of 1 ⁇ m or less.
- the upper limit of the content of the carbonaceous material for maintaining the electrode performance is lower than that required in the present invention.
- the average particle diameter of the silver particles is in the above range, even if the carbonaceous material is added to the conductive paste to form an electrode, the electrical properties are not deteriorated, and as described above, the total weight of the carbonaceous material added to the paste may be Even if the weight is about the same as the total weight, the electrical properties of the electrodes formed thereafter are not substantially reduced. Since the silver particle which comprises the silver powder which concerns on this invention can obtain the objective effect in the said invention, when the average particle diameter is 1 micrometer or less, there is no restriction
- an optional conductive metal component conventionally used in the art may be further added.
- copper, aluminum, oxides thereof, or the like may be provided alone or in combination of two or more, to further impart desired properties.
- Glass frit powder that can be used in the present invention may be used without limitation the glass frit used in the art.
- glass frit powders may include lead oxides and / or bismuth oxides.
- SiO 2 -PbO-based, SiO 2 -PbO-B 2 O 3 based or Bi 2 O 3 -B 2 O 3 -SiO 2 based powder such as this may be used respectively alone or in mixture of two or more, whereby It is not limited.
- organic binder is further added to prepare the mixture of the silver powder, the carbonaceous material, the glass frit powder and the optional conductive metal component in paste form.
- the organic binder used in the present invention may be used without limitation as long as it is an organic binder used in the art for producing a metal paste composition.
- cellulose Celluose
- butyl carbitol or terpineol, etc. may be used alone or in combination of two or more, but is not limited thereto.
- the glass frit powder and the organic binder may be variously selected according to the specific use of the metal paste composition.
- the content of the glass frit powder is preferably 1 to 20 parts by weight based on 100 parts by weight of the silver powder.
- the organic binder may include 5 to 30 parts by weight based on 100 parts by weight of the silver powder.
- the electrode may be easily formed and may have a very easy viscosity for screen printing, as well as prevent a paste from flowing down after screen printing, thereby exhibiting an appropriate aspect ratio.
- the present invention provides a silver-carbon composite electrode which can be prepared by applying a metal paste composition according to the present invention to a predetermined substrate according to the desired purpose and then undergoing a firing process.
- the silver-carbon composite electrode of the present invention a carbon component around the surface of the electrode reacts with oxygen in the atmosphere during firing to form a gas such as carbon dioxide and is lost. Therefore, the silver-carbon composite electrode of the present invention is substantially free of carbon components on the electrode surface exposed to the outside, the outside of the electrode has a color unique to the conventional silver electrode, the carbon-based material is dispersed only inside the electrode It exists in form.
- the silver-carbon composite electrode of the present invention does not show a significant difference in the specific resistance value from the silver electrode on the surface.
- the specific resistance of the silver-carbon composite electrode of the present invention may be 5 to 15 ⁇ / cm, but is not limited thereto.
- Appropriate firing temperature for obtaining the silver-carbon composite electrode of the present invention is typically a firing temperature applied to the conductive paste may be adopted, for example, 500 ⁇ 960 °C, this is only an example and various modifications as necessary This is possible.
- FIG. 9 a silicon solar cell using the metal paste composition of the present invention will be described with reference to FIG. 9 as an example.
- the metal paste composition of the present invention may be used in various other electrical materials, electronic devices, and electronic products.
- the configuration shown in the embodiments and drawings described below are only the most preferred embodiment of the present invention and do not represent all of the technical idea of the present invention, which can be replaced at the time of the present application It should be understood that there may be various equivalents and variations.
- FIG. 9 is a schematic cross-sectional view showing the structure of a silicon solar cell according to an embodiment of the present invention.
- a silicon solar cell according to the present invention includes a silicon semiconductor substrate 201, an emitter layer 202 formed on the substrate 201, and an anti-reflection film formed on the emitter layer 202. 203, a front electrode 204 penetrating the antireflection film 203 and connected to the upper surface of the emitter layer 202, and a rear electrode 205 connected to the rear surface of the substrate 201.
- the substrate 201 may be doped with group III elements B, Ga, In, etc. as p-type impurities, and the emitter layer 202 may have group 5 elements P, As, Sb, etc. with n-type impurities as impurities. Can be doped.
- the substrate 201 and the emitter layer 202 are doped with the opposite conductivity type impurities, a p-n junction is formed at the interface between the substrate 201 and the emitter layer 202.
- the p-n junction may be formed by doping the n-type impurity to the substrate 201 and doping the p-type impurity into the emitter layer 202.
- the anti-reflection film 203 immobilizes defects (eg, dangling bonds) present in the surface or bulk of the emitter layer 202 and reduces the reflectance of sunlight incident on the front surface of the substrate 201. Immobilization of defects in the emitter layer 202 eliminates the recombination sites of minority carriers and increases the open voltage of the solar cell. When the reflectance of the solar light is reduced, the amount of light reaching the p-n junction is increased to increase the short circuit current of the solar cell. As such, when the open circuit voltage and the short-circuit current of the solar cell are increased by the anti-reflection film 203, the conversion efficiency of the solar cell is improved by that amount.
- defects eg, dangling bonds
- the anti-reflection film 203 is any one single film selected from the group consisting of silicon nitride film, silicon nitride film including hydrogen, silicon oxide film, silicon oxynitride film, MgF 2 , ZnS, MgF 2 , TiO 2 and CeO 2 , or Two or more material films may have a combined multi-layer structure, but is not limited thereto.
- the anti-reflection film 203 may be formed by vacuum deposition, chemical vapor deposition, spin coating, screen printing, or spray coating. However, the method of forming the anti-reflection film 203 according to the present invention is not limited thereto.
- the front electrode 204 and the back electrode 205 are metal electrodes made of silver and aluminum, respectively.
- the front electrode 204 is made of the metal paste composition of the present invention.
- the silver electrode has excellent electrical conductivity
- the aluminum electrode has not only excellent electrical conductivity but also excellent affinity with the substrate 201 made of a silicon semiconductor, so that the bonding is excellent.
- the front electrode 204 and the back electrode 205 can be manufactured by various known techniques, but are preferably formed by screen printing. That is, the front electrode 204 is formed by screen printing the metal paste composition of the present invention on the front electrode formation point as described above and then performing heat treatment. When the heat treatment is performed, the front electrode penetrates the anti-reflection film 203 and is connected to the emitter layer 202 by a punch through phenomenon.
- the back electrode 205 is formed by printing a back electrode paste containing aluminum, quartz silica, a binder, or the like on the back surface of the substrate 201 and then performing heat treatment.
- aluminum, an electrode constituent material is diffused through the back surface of the substrate 201 to form a back surface field (not shown) layer on the interface between the back electrode 205 and the substrate 201.
- the carrier may be prevented from recombining by moving to the rear surface of the substrate 201. When recombination of the carrier is prevented, the open voltage and fidelity are increased to improve the conversion efficiency of the solar cell.
- a metal paste composition was prepared in the same manner as in Example 1 except that graphite was added instead of carbon black.
- a metal paste composition was prepared in the same manner as in Example 1 except that carbon black was added to deviate from the scope of the present invention.
- a metal paste composition was prepared in the same manner as in Example 2, except that graphite was added outside the scope of the present invention.
- Example 1 silver Carbonaceous material Glass frit Organic binder
- Example 1 100 Carbon black 0.5 10 20
- Example 2 100 1.0 10 20
- Example 3 100 5.0 10 20
- Example 4 100 10.0 10 20
- Example 5 100 20.0 10 20
- Example 6 100 black smoke 0.5 10 20
- Example 7 100 1.0 10 20
- Example 8 100 5.0 10 20
- Example 9 100 10.0 10 20
- the unit is parts by weight *
- the silver particles of Examples 1 to 10 and Comparative Examples 1 to 4 have an average particle diameter of about 3 ⁇ m.
- Example 11 100 0.5 10 20
- Example 12 100 1.0 10 20
- Example 13 100 10.0 10 20
- Example 14 100 25.0 10 20 * A unit is weight part. * The silver particle of Examples 11-14 is about 0.8 micrometer in average particle diameter.
- FIG. 2 SEM photographs of the electrodes according to Examples 11 to 12 and Examples 1 to 2, in which baking was completed, are shown in FIG. 2 (Example 11), FIG. 3 (Example 12), FIG. 4 (Example 1), and FIG. 5 ( Example 2). Referring to each figure, it can be seen that the sintered structure of FIGS. 2 and 3 is more dense than FIGS. 4 and 5.
- FIG. 6 shows a SEM photograph of a cross section of the silver-carbon composite electrode prepared according to Example 11 of the present invention. As shown in FIG. 6, it can be seen that the carbonaceous material is not present on the electrode surface and is dispersed in the electrode.
- the electrode was formed by printing the prepared metal paste composition on a glass substrate using a screen printing method and then baking at 650 ° C. for 5 minutes. The firing was completed, the specific resistance was measured using a 4-point probe, the results are shown in FIG.
- the metal paste composition for forming an electrode of the present invention has a lower content of silver than the conventional one, but does not substantially degrade the electrical characteristics of the circuit or electrode produced therefrom.
- the use of the metal paste composition of the present invention can reduce the amount of expensive silver used without lowering the performance of the electrode, thereby lowering the manufacturing cost of the electrical appliance manufactured therefrom.
Abstract
Description
은 | 탄소계 물질 | 유리 프릿 | 유기 바인더 | ||
실시예 1 | 100 | 카본블랙 | 0.5 | 10 | 20 |
실시예 2 | 100 | 1.0 | 10 | 20 | |
실시예 3 | 100 | 5.0 | 10 | 20 | |
실시예 4 | 100 | 10.0 | 10 | 20 | |
실시예 5 | 100 | 20.0 | 10 | 20 | |
실시예 6 | 100 | 흑연 | 0.5 | 10 | 20 |
실시예 7 | 100 | 1.0 | 10 | 20 | |
실시예 8 | 100 | 5.0 | 10 | 20 | |
실시예 9 | 100 | 10.0 | 10 | 20 | |
실시예 10 | 100 | 20.0 | 10 | 20 | |
비교예 1 | 100 | 카본블랙 | 25.0 | 10 | 20 |
비교예 2 | 100 | 30.0 | 10 | 20 | |
비교예 3 | 100 | 흑연 | 25.0 | 10 | 20 |
비교예 4 | 100 | 30.0 | 10 | 20 | |
*단위는 중량부*실시예1~10 및 비교예1~4의 은 입자는 평균입경이 약 3 ㎛. |
은 | 카본블랙 | 유리프릿 | 용매 | |
실시예11 | 100 | 0.5 | 10 | 20 |
실시예12 | 100 | 1.0 | 10 | 20 |
실시예13 | 100 | 10.0 | 10 | 20 |
실시예14 | 100 | 25.0 | 10 | 20 |
*단위는 중량부.*실시예 11~14의 은 입자는 평균입경이 약 0.8 ㎛. |
Claims (11)
- 유리 프릿 분말, 은 분말, 및 유기 바인더를 포함하는 전극형성용 금속 페이스트 조성물에 있어서,탄소계 물질 분말을 더 포함하고, 상기 탄소계 물질 분말의 함량은 상기 은 분말 100 중량부에 대하여 20 중량부 이하인 것을 특징으로 하는 전극형성용 금속 페이스트 조성물.
- 제1항에 있어서,상기 탄소계 물질은 흑연, 카본 블랙, 아세틸렌 블랙, 덴카 블랙, 캐천 블랙, 활성 카본, 중다공성 카본, 탄소나노튜브, 탄소나노섬유, 탄소나노혼, 탄소나노링, 탄소나노와이어, 풀러렌 및 수퍼P로 이루어진 군에서 선택되는 어느 하나 또는 2종 이상의 혼합물인 것을 특징으로 하는 전극형성용 금속 페이스트 조성물.
- 제1항에 있어서,상기 유리 프릿 분말은 납 산화물 또는 비스무트 산화물을 포함하는 것을 특징으로 하는 전극형성용 금속 페이스트 조성물.
- 유리 프릿 분말, 은 분말, 및 유기 바인더를 포함하는 전극형성용 금속 페이스트 조성물에 있어서,탄소계 물질 분말을 더 포함하고, 상기 탄소계 물질 분말의 함량은 상기 은 분말 100 중량부에 대하여 25 중량부 이하이며, 상기 은 분말의 은 입자는 평균입경이 1 ㎛ 이하인 것을 특징으로 하는 전극형성용 금속 페이스트 조성물.
- 제4항에 있어서,상기 탄소계 물질은 흑연, 카본 블랙, 아세틸렌 블랙, 덴카 블랙, 캐천 블랙, 활성 카본, 중다공성 카본, 탄소나노튜브, 탄소나노섬유, 탄소나노혼, 탄소나노링, 탄소나노와이어, 풀러렌 및 수퍼P로 이루어진 군에서 선택되는 어느 하나 또는 2종 이상의 혼합물인 것을 특징으로 하는 전극형성용 금속 페이스트 조성물.
- 제4항에 있어서,상기 유리 프릿 분말은 납 산화물 또는 비스무트 산화물을 포함하는 것을 특징으로 하는 전극형성용 금속 페이스트 조성물.
- 제1항 내지 제6항 중 어느 한 항에 따른 금속 페이스트 조성물을 소성시켜 형성되며, 탄소계 물질은 전극 내부에 분산되어 있는 것을 특징으로 하는 은-탄소 복합체 전극.
- 제7항에 있어서,상기 은-탄소 복합체 전극은 전극 표면의 비저항이 5 ~ 15 μΩ/cm 인 것을 특징으로 하는 은-탄소 복합체 전극.
- 제7항에 있어서,상기 전극 내의 은과 탄소 성분의 중량비가 은 : 탄소 = 1 : 0.001 ~ 0.25 인 것을 특징으로 하는 은-탄소 복합체 전극.
- 제7항에 있어서,상기 소성 온도는 500 ~ 960 ℃ 인 것을 특징으로 하는 은-탄소 복합체 전극.
- 실리콘 반도체 기판; 상기 기판 상부에 형성되는 에미터층; 상기 에미터층 상에 형성된 반사방지막; 상기 반사방지막을 관통하여 상기 에미터층에 접속된 전면 전극; 및 상기 기판의 배면에 접속된 후면 전극을 포함하는 실리콘 태양전지에 있어서,상기 전면 전극은 제1항 내지 제6항 중 어느 한 항에 따른 금속 페이스트 조성물을 상기 반사방지막 상에 소정의 패턴으로 도포하고 소성시켜 형성되는 것을 특징으로 하는 실리콘 태양전지.
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US12/996,316 US20120000523A1 (en) | 2008-06-04 | 2009-06-03 | Metal paste composition for forming electrode and silver-carbon composite electrode and silicon solar cell using the same |
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KR10-2009-0046138 | 2009-05-26 | ||
KR1020090046138A KR101156122B1 (ko) | 2009-05-26 | 2009-05-26 | 전극형성용 금속 페이스트 조성물 및 이를 이용한 은-탄소 복합체 전극과 실리콘 태양전지 |
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CN103222011A (zh) * | 2010-11-18 | 2013-07-24 | Lg化学株式会社 | 用于形成电极的银糊组合物以及使用其的硅太阳能电池 |
EP2696352A2 (en) * | 2011-04-07 | 2014-02-12 | Lg Chem, Ltd. | Silver paste composition for forming an electrode, and method for preparing same |
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US9640298B2 (en) | 2010-11-18 | 2017-05-02 | Lg Chem, Ltd. | Silver paste composition for forming an electrode, and silicon solar cell using same |
EP2696352A2 (en) * | 2011-04-07 | 2014-02-12 | Lg Chem, Ltd. | Silver paste composition for forming an electrode, and method for preparing same |
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US20120000523A1 (en) | 2012-01-05 |
WO2009148259A3 (ko) | 2010-03-11 |
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