WO2011013440A1 - 太陽電池電極用無鉛導電性組成物 - Google Patents
太陽電池電極用無鉛導電性組成物 Download PDFInfo
- Publication number
- WO2011013440A1 WO2011013440A1 PCT/JP2010/059154 JP2010059154W WO2011013440A1 WO 2011013440 A1 WO2011013440 A1 WO 2011013440A1 JP 2010059154 W JP2010059154 W JP 2010059154W WO 2011013440 A1 WO2011013440 A1 WO 2011013440A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mol
- lead
- solar cell
- glass
- electrode
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 49
- 239000011521 glass Substances 0.000 claims abstract description 79
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 11
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 7
- 239000000654 additive Substances 0.000 claims description 7
- 239000002245 particle Substances 0.000 claims description 7
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 6
- 229910052708 sodium Inorganic materials 0.000 claims description 6
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 claims description 3
- 239000000470 constituent Substances 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 8
- 239000000377 silicon dioxide Substances 0.000 abstract description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract 2
- FUJCRWPEOMXPAD-UHFFFAOYSA-N Li2O Inorganic materials [Li+].[Li+].[O-2] FUJCRWPEOMXPAD-UHFFFAOYSA-N 0.000 abstract 1
- KKCBUQHMOMHUOY-UHFFFAOYSA-N Na2O Inorganic materials [O-2].[Na+].[Na+] KKCBUQHMOMHUOY-UHFFFAOYSA-N 0.000 abstract 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052593 corundum Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- XUCJHNOBJLKZNU-UHFFFAOYSA-M dilithium;hydroxide Chemical compound [Li+].[Li+].[OH-] XUCJHNOBJLKZNU-UHFFFAOYSA-M 0.000 abstract 1
- NOTVAPJNGZMVSD-UHFFFAOYSA-N potassium monoxide Inorganic materials [K]O[K] NOTVAPJNGZMVSD-UHFFFAOYSA-N 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
- 229910001845 yogo sapphire Inorganic materials 0.000 abstract 1
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 36
- 239000010408 film Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 19
- 239000011787 zinc oxide Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000002003 electrode paste Substances 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004020 conductor Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 230000003247 decreasing effect Effects 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000011734 sodium Substances 0.000 description 8
- 239000003513 alkali Substances 0.000 description 7
- 229910052782 aluminium Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000000292 calcium oxide Substances 0.000 description 5
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 5
- 230000007774 longterm Effects 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000005355 lead glass Substances 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- 239000002994 raw material Substances 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- -1 other compounds Chemical class 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Definitions
- the present invention relates to a conductive composition suitable for a solar cell electrode formed by a fire-through method.
- a general silicon-based solar cell is provided with an antireflection film and a light-receiving surface electrode on an upper surface of a silicon substrate which is a p-type polycrystalline semiconductor via an n + layer, and on the lower surface via a p + layer. It has a structure provided with electrodes (hereinafter simply referred to as “electrodes” when they are not distinguished from each other).
- the antireflection film is for reducing the surface reflectance while maintaining sufficient visible light transmittance, and is made of a thin film of silicon nitride, titanium dioxide, silicon dioxide or the like.
- the light-receiving surface electrode of the solar cell is formed by a method called fire-through, for example.
- this electrode forming method for example, after the antireflection film is provided on the entire surface of the n + layer, a conductive paste is applied on the antireflection film in an appropriate shape by using, for example, a screen printing method, and a baking process is performed. Apply. According to this method, the process is simplified as compared with the case where the antireflection film is partially removed and an electrode is formed on the removed portion, and there is no problem of misalignment between the removed portion and the electrode formation position. .
- the conductive paste is mainly composed of, for example, silver powder, glass frit (a piece of flaky or powdered glass that is crushed as necessary after melting and quenching the glass raw material), an organic vehicle, and an organic solvent.
- glass frit a piece of flaky or powdered glass that is crushed as necessary after melting and quenching the glass raw material
- organic vehicle a piece of flaky or powdered glass that is crushed as necessary after melting and quenching the glass raw material
- an organic solvent for example, a piece of flaky or powdered glass that is crushed as necessary after melting and quenching the glass raw material
- an organic vehicle for example, an organic solvent
- JP 2006-332032 A JP 2008-109016 A JP 2006-313744 A Special table 2008-543080
- lead-free glass containing no lead has come to be used in various fields due to concerns about environmental problems, etc., but lead glass is still used in the above applications. If lead-free glass is used as the conductive paste for forming the light-receiving surface electrode by the fire-through method, the firing temperature becomes higher than that when lead glass is used, and sufficient ohmic contact cannot be obtained, resulting in electrical characteristics. It is because it is inferior.
- Various proposals have been made in the past for improving the firing temperature and fire-through properties when using lead-free glass, but those having sufficient characteristics have not yet been obtained.
- the addition amount of the Zn-containing additive is preferably in the range up to 10 (wt%) with respect to the total composition, and the average particle size is preferably less than 0.1 ( ⁇ m).
- the amount of the Zn-containing additive is small, and it is preferable to use a fine one in order to obtain an effect in a small amount, but a small amount and a fine additive are poorly dispersible and are difficult to handle. Have difficulty.
- ZnO is 5 ⁇ 10 (wt%)
- Bi 2 O 3 is 70 ⁇ 84 (wt%)
- B 2 O 3 + SiO 2 is 6 (wt%) or more of a silver paste for solar cell element using a glass frit Has been proposed (see Patent Document 2).
- This silver paste is intended to increase the adhesive strength and long-term reliability with the substrate, but even if a glass frit whose main component is within the above composition range is used, the adhesive strength is not necessarily obtained. In addition, sufficient electrical characteristics could not be obtained.
- lead-free glass for solar cell electrode applications includes metal particles of any of Al, Cu, Au, Ag, Pd, Pt, alloys thereof, or mixtures thereof, lead-free glass, and organic media.
- SiO 2 is 0.5 to 35 (wt%)
- B 2 O 3 is 1 to 15 (wt%)
- Bi 2 O 3 is 55 to 90 (wt%)
- ZnO is 0 to 15 (wt) %)
- Al 2 O 3 in a proportion in the range of 0 to 5 (wt%).
- the back electrode is made of Al, the lead cannot be soldered.
- the bus bar is made of Ag or Ag / Al
- the back surface electric field is damaged, so the conductive composition for forming an electrode that does not cause these problems.
- the purpose is to improve the back electrode, and no consideration is given to fire-through property and electrical characteristics when used for the light-receiving surface electrode.
- the above composition has a problem that the softening point is too high.
- the glass composition described in the claims is remarkably wide and does not specify any composition suitable for forming a light-receiving surface electrode by fire-through. On the other hand, some specific glass compositions are described in the examples. However, even if any glass is used, the electrical characteristics are insufficient, or the softening point is too high and used for the light receiving surface electrode. It was not obtained.
- the present invention has been made in the background of the above circumstances, and an object thereof is to provide a lead-free conductive composition for solar cell electrodes capable of forming an electrode having excellent electrical characteristics.
- the gist of the present invention is a lead-free conductive composition for a solar cell electrode comprising a conductive powder, a glass frit, and a vehicle, wherein (a) the glass frit is oxidized.
- the lead-free conductive composition for solar cell electrodes is lead-free when the glass frit constituting the solar cell electrode is composed of lead-free glass having the above composition, so that the solar cell electrode is formed using this.
- an electrode having excellent electrical characteristics can be obtained.
- B 2 O 3 is a glass-forming oxide (that is, a component that forms a glass skeleton), and is an essential component for lowering the softening point of glass. If it is less than 20 (mol%), the softening point is too high, and if it exceeds 33 (mol%), the electric characteristics of the solar cell become insufficient. While the softening point increases with decreasing B 2 O 3, the electrical characteristics decrease with increasing B 2 O 3 (for example, in silicon-based solar cells, this is considered to be due to the higher reactivity with Si, the substrate material). Therefore, the ratio is preferably determined in consideration of a desired softening point and electrical characteristics, for example, 30 (mol%) or less is preferable.
- Bi 2 O 3 is a component that lowers the softening point of glass and is essential for enabling low-temperature firing. If it is less than 10 (mol%), the softening point is too high, and if it exceeds 29 (mol%), the electrical characteristics of the solar cell become insufficient. In order to obtain as high electrical characteristics as possible, the amount of Bi 2 O 3 is preferably as small as possible, and more preferably 20 (mol%) or less. Further, in order to sufficiently lower the softening point, a larger amount of Bi 2 O 3 is preferable, and 15 (mol%) or more is preferable. That is, a range of 15 to 20 (mol%) is particularly preferable.
- ZnO is a component that lowers the softening point of glass and increases durability (i.e., long-term reliability) . If it is less than 15 (mol%), the softening point is too high and durability is insufficient. . On the other hand, if it exceeds 30 (mol%), the balance with other components is affected, but the glass is easily crystallized.
- the larger the amount the easier it is to crystallize, so 20 (mol%) or more is more preferred, and 30 (mol%) or less is more preferred. That is, the range of 20 to 30 (mol%) is particularly preferable.
- Alkali components Li 2 O, Na 2 O, K 2 O are components that lower the softening point of the glass. If the total amount is less than 8 (mol%), the softening point is too high, and 21 (mol%) is reduced. If it exceeds, the electrical characteristics of the solar cell become insufficient.
- the softening point increases as the amount of the alkali component decreases, while the electrical characteristics decrease as the amount of the alkali component increases. Therefore, it is more preferably 10 (mol%) or more, and more preferably 20 (mol%) or less. That is, the range of 10 to 20 (mol%) is particularly preferable.
- SiO 2 is a glass-forming oxide and has an effect of improving the stability of the glass, it is preferably contained although it is not an essential component.
- the softening point increases as the number increases, it is necessary to keep it at 20 (mol%) or less. In order to obtain sufficient stability, 4 (mol%) or more is more preferable, and in order to keep the softening point at a sufficiently low value, 11 (mol%) or less is more preferable. That is, 4 to 11 (mol%) is particularly preferable.
- the said glass which comprises the electrically conductive composition of this invention can contain another various glass structural component and additive in the range which does not impair the characteristic.
- Al 2 O 3 , P 2 O 5 , alkaline earth oxide, and other compounds may be contained. If these are contained in a large amount, the electrical characteristics of the solar cell are impaired.
- the glass frit has an average particle size of 3.0 ( ⁇ m) or less.
- the average particle size is 0.5 ( ⁇ m) or more, the dispersibility at the time of preparing the paste is further improved, and thus the productivity is increased.
- the lead-free conductive composition for solar cell electrodes contains the glass frit in a proportion within the range of 2 to 6 (wt%) with respect to the entire paste.
- the glass frit amount increases, the solubility of the antireflection film increases and the fire-through property improves.
- the resistance value increases and the solar cell output decreases. Therefore, in order to obtain a sufficiently high fire-through property, it is preferable to be 2 (wt%) or more, while in order to obtain a sufficiently high solar cell output, it may be limited to 6 (wt%) or less. preferable.
- the conductive powder is a silver powder.
- the conductive powder copper powder, nickel powder or the like can be used, but silver powder is most preferable because high conductivity can be obtained.
- the lead-free conductive composition for a solar cell electrode contains 64 to 90 parts by weight of the silver powder and 5 to 20 parts by weight of the vehicle. By doing so, it is possible to obtain a conductive composition that has good printability, high conductivity, and can produce an electrode with good solder wettability. If the silver powder is too small, high conductivity cannot be obtained, and if it is excessive, the fluidity is lowered and the printability is deteriorated. If the glass frit is too small, the adhesion to the substrate is insufficient. If the glass frit is excessive, the glass floats on the electrode surface after firing, resulting in poor solder wettability.
- the silver powder is not particularly limited, and the basic effect of the present invention that the optimum firing temperature range can be expanded regardless of the shape of the powder, such as a spherical shape or a scale shape, can be enjoyed.
- the printability is excellent and the filling rate of the silver powder in the coating film is increased. Therefore, in combination with the use of highly conductive silver, Compared with the case where silver powder of another shape such as a shape is used, the conductivity of the electrode generated from the coating film is increased. Therefore, the line width can be further reduced while ensuring the necessary conductivity. Therefore, if the conductive composition is applied to the light-receiving surface electrode to reduce the line width, the light-receiving area capable of absorbing solar energy can be further increased, and thus a solar cell with higher conversion efficiency can be obtained.
- the conductive composition of the present invention can be suitably used for the light-receiving surface electrode because it can suitably control the diffusion of silver during the electrode formation by fire-through as described above.
- it is not limited to the light receiving surface electrode, and can be used as a back surface electrode.
- the back electrode is composed of an aluminum film covering the entire surface and a strip-like electrode overlapping therewith, but is also suitable as a constituent material of the strip-like electrode.
- the glass frit can be synthesized from various raw materials that can be vitrified in the composition range, and examples thereof include oxides, carbonates, nitrates, and the like.
- Bi sources include bismuth oxide
- Zinc oxide may be used as the Zn source
- silicon dioxide as the Si source
- boric acid as the B source
- lithium carbonate as the Li source
- sodium carbonate as the Na source
- potassium carbonate as the K source.
- FIG. 1 is a diagram schematically showing a cross-sectional structure of a silicon-based solar cell 10 to which a conductive composition according to an embodiment of the present invention is applied.
- a solar cell 10 is formed on a silicon substrate 12 which is, for example, a p-type polycrystalline semiconductor, an n + layer 14 and a p + layer 16 respectively formed on the upper and lower surfaces thereof, and the n + layer 14.
- the antireflection film 18 and the light receiving surface electrode 20, and the back electrode 22 formed on the p + layer 16 are provided.
- the n + layer 14 and the p + layer 16 are provided by forming layers having a high impurity concentration on the upper and lower surfaces of the silicon substrate 12, and the thickness dimension of the high concentration layer, that is, the layers 14 and 16 are formed.
- the thickness dimension is, for example, about 0.5 ( ⁇ m).
- the impurity contained in the n + layer 14 is, for example, phosphorus (P) that is an n-type dopant
- the impurity contained in the p + layer 16 is, for example, boron (B) that is a p-type dopant.
- the antireflection film 18 is a thin film made of, for example, silicon nitride Si 3 N 4 , and is provided with an optical thickness of, for example, about 1 ⁇ 4 of the visible light wavelength. It has a very low reflectivity of about 2%.
- the light-receiving surface electrode 20 is made of, for example, a thick film conductor having a uniform thickness. As shown in FIG. 2, the light-receiving surface electrode 20 is a comb having a large number of thin line portions substantially on the entire surface of the light-receiving surface 24. Are provided in a planar shape.
- the above thick film conductor, a 88 ⁇ 99 (wt%) about and glass Ag consist 1 ⁇ 12 (wt%) a thick film silver containing degree, the value that the glass in terms oxide, Bi 2 O 3 and 10 ⁇ 29 (mol%), ZnO and 15 ⁇ 30 (mol%), a SiO 2 20 (mol%) or less, a B 2 O 3 20 ⁇ 33 ( mol%), alkaline components (Li 2 O , Na 2 O, K 2 O) are lead-free glasses each containing a total amount of 8 to 21 (mol%).
- the thickness dimension of the conductor layer is within a range of, for example, 15 to 20 ( ⁇ m), for example, about 17 ( ⁇ m). It is about 100 ( ⁇ m) and has sufficiently high conductivity.
- the back electrode 22 is formed by applying a full-surface electrode 26 formed by applying a thick film material containing aluminum as a conductor component on the p + layer 16 over almost the entire surface, and a strip-like application on the full-surface electrode 26.
- the band-shaped electrode 28 made of thick film silver is formed.
- the belt-like electrode 28 is provided in order to make it possible to solder a conducting wire or the like to the back electrode 22.
- the light-receiving surface electrode 20 is composed of thick film silver containing lead-free glass having the above-described composition in the range of 1 to 12 (wt%) as described above. Compared to conventional solar cells using lead-free glass, it has excellent electrical characteristics. For example, it has a F. of 74 (%) or more, which is about the same as when lead glass is used. F. There is an advantage to having a value.
- the light-receiving surface electrode 20 as described above is formed by a well-known fire-through method using an electrode paste made of, for example, conductor powder, glass frit, vehicle, and solvent.
- An example of the manufacturing method of the solar cell 10 including the formation of the light receiving surface electrode will be described below together with the manufacturing method of the electrode paste of the comparative example.
- the glass frit is produced.
- Bismuth oxide as the Bi source zinc oxide as the Zn source, silicon dioxide as the Si source, boric acid as the B source, lithium carbonate as the Li source, sodium carbonate as the Na source, potassium carbonate as the K source, Al source
- Aluminum oxide as the P source NH 4 H 2 PO 4 as the P source
- calcium oxide CaO as the Ca source and BaCO 3 as the Ba source, and weighed and formulated to have the compositions shown in the examples in Table 1 did.
- the raw materials may be oxides, hydroxides, carbonates, or nitrates, but it is preferable to use finely pulverized raw materials because they are easy to melt.
- the obtained glass is pulverized using an appropriate pulverizer such as a pot mill to obtain powder having an average particle size of 0.4 ( ⁇ m), 0.6 ( ⁇ m), 1.5 ( ⁇ m), 3.0 ( ⁇ m), 4.0 ( ⁇ m). It was.
- the conductor powder for example, a commercially available spherical silver powder having an average particle diameter in the range of 0.5 to 3 ( ⁇ m), for example, about 2 ( ⁇ m) was prepared.
- the vehicle is prepared by dissolving an organic binder in an organic solvent.
- butyl carbitol acetate is used as the organic solvent
- ethyl cellulose is used as the organic binder.
- the ratio of ethyl cellulose in the vehicle is, for example, about 15 (wt%).
- a solvent added separately from the vehicle is, for example, butyl carbitol acetate. That is, although it is not limited to this, the same solvent as that used for the vehicle may be used. This solvent is added for the purpose of adjusting the viscosity of the paste.
- the n + layer 14 and the p + are diffused or implanted into an appropriate silicon substrate by a well-known method such as a thermal diffusion method or ion plantation.
- the silicon substrate 12 is produced.
- a silicon nitride (SiN x ) thin film is formed thereon by an appropriate method such as spin coating, and the antireflection film 18 is provided.
- the electrode paste is screen-printed on the antireflection film 18 with the pattern shown in FIG. This is dried at, for example, 150 (° C.), and further baked at a temperature in the range of 650 to 900 (° C.) in a near infrared furnace.
- the glass component in the electrode paste dissolves the antireflection film 18 in the firing process, and the electrode paste breaks the antireflection film 18, so that the conductor component in the electrode paste, that is, silver and the n + layer 14
- ohmic contact between the silicon substrate 12 and the light receiving surface electrode 20 is obtained.
- the light receiving surface electrode 20 is formed in this way.
- the said back surface electrode 22 may be formed after the said process, it can also be formed by baking simultaneously with the light-receiving surface electrode 20.
- FIG. When the back electrode 22 is formed, the entire surface electrode 26 made of a thick aluminum film is formed by applying, for example, an aluminum paste to the entire back surface of the silicon substrate 12 by screen printing or the like and performing a baking process. Further, the strip electrode 28 is formed by applying the electrode paste on the surface of the entire surface electrode 26 in a strip shape using a screen printing method or the like and performing a baking treatment. Thereby, the back electrode 22 which consists of the full surface electrode 26 which covers the whole back surface, and the strip
- F. shown in the solar cell 10 obtained in this manner, the light receiving surface electrode 20 is formed by firing at the firing temperature recognized as optimum for each of the examples and comparative examples in which the glass composition and the addition amount are variously changed. Then, the output of the obtained solar cell 10 is measured and obtained. In addition, the output of the solar cell 10 was measured using a commercially available solar simulator.
- the “F.F. value after humidity resistance test” shown in the rightmost column is an accelerated test held for 1000 hours at a high temperature and high humidity of temperature 85 (° C.) and humidity 85 (%). . F. When the rate of change of the value was within 5 (%), it was regarded as having moisture resistance (“ ⁇ ” evaluation), and when it exceeded 5 (%), it was regarded as having no moisture resistance (“ ⁇ ” evaluation).
- Bi 2 O 3 is 10 to 29 (mol%)
- B 2 O 3 is 20 to 33 (mol%)
- SiO 2 is 20 (mol%) or less
- ZnO is 15-30 (mol%)
- alkali components total of Li 2 O, Na 2 O, K 2 O
- other components Al 2 O 3 , CaO, BaO, P 2 O If the total of 5 ) is within the range of 18 (mol%) or less, F.R. F. The value is high enough.
- Bi 2 O 3 is 15 to 20 (mol%)
- B 2 O 3 is 26 to 30 (mol%)
- SiO 2 is 4 to 17 (mol%)
- alkali components total of Li 2 O, Na 2 O, K 2 O 17-21 (mol%)
- other components Al 2 O 3 , CaO, BaO, P If the total of 2 O 5 ) is within the range of 3 (mol%) or less, 77.0 (%) F.I. F. A value is obtained.
- Comparative Examples 1 to 10 are F.I. F. The value remained below 70 (%).
- Comparative Examples 1, 3, and 7 the electrical characteristics deteriorate because Bi 2 O 3 is excessive, and the softening point is too high because ZnO is too small and the alkali component is too little or zero. . F. The value is considered to have decreased.
- Comparative Examples 2 and 6 the electrical characteristics deteriorate because Bi 2 O 3 is excessive, and the softening point becomes too high because B 2 O 3 is excessive. F. The value is considered to have decreased.
- Comparative Example 4 the electrical characteristics deteriorated due to the excess of Bi 2 O 3 and B 2 O 3 . F. The value is considered to have decreased.
- Comparative Example 10 since the B 2 O 3 is excessive, the electrical characteristics are deteriorated, and since ZnO is excessive, the glass is easily crystallized, and since the alkali component is not included, the softening point is high. F. F. The value is considered to have decreased.
- Comparative Examples 11 to 13 are higher in F.V. than Comparative Examples 1 to 10. F. Although the value was obtained, it remained at 70 to 72 (%). In Comparative Example 11, since B 2 O 3 is too small, the softening point is high, and since ZnO is excessive, the glass is easily crystallized. F. It is thought that the value became low. Further, in Comparative Examples 12 and 13, there is no problem in the glass component ratio, but since the amount of glass added when preparing the electrode paste is too small, sufficient fire-through properties cannot be obtained and good. F. The ohmic contact could not be obtained, or the resistance value of the electrode material became too high due to the excessive addition of glass. F. It is thought that the value remained low. Comparative Example 14 has a sufficiently high F.V. F. Although the value was obtained, the change after the moisture resistance test exceeded 5 (%), and the long-term reliability was insufficient. It is considered that since the amount of Si is too much, the softening point is high and the moisture resistance is insufficient.
- Example 8 to 11 the glass frit having the same composition was used and the amount added to the entire paste was changed between 2 to 6 (wt%), so that the F. F. The value is evaluated. As shown in these evaluation results, if the addition amount is in the range of 2 to 6 (wt%), F.R. F. No change in value was observed. However, as shown in Comparative Examples 12 and 13 described above, when the addition amount is 1 (wt%) or 7 (wt%), F.I. F. The value drops slightly. Therefore, a sufficiently high F.I. F. In order to obtain the value, it is desirable that the glass addition amount is in the range of 2 to 6 (wt%).
- the glass frit constituting the paste has Bi 2 O 3 of 10 to 29 (mol%), B 2 O 3 of 20 to 33 (mol%), SiO 2 is 20 (mol%) or less, ZnO is 15-30 (mol%), alkaline components (total of Li 2 O, Na 2 O, K 2 O) are 8-21 (mol%), other components ( Since the total of Al 2 O 3 , CaO, BaO, and P 2 O 5 ) is made of lead-free glass having a composition in the range of 18 (mol%) or less, the light-receiving surface electrode 20 of the solar cell 10 is used using this.
- F.F. F. The value is 75 (%) or more, which is advantageous in that an electrode having excellent electrical characteristics can be obtained.
- the ZnO amount is in the range of 15 to 30 (mol%), it is excellent in long-term reliability, for example, after a high temperature and high humidity test for 1000 hours. F. F. There is also an advantage that the value change rate is only 5% or less.
- the antireflection film 18 is made of a silicon nitride film.
- the constituent material is not particularly limited, and various other materials such as titanium dioxide TiO 2 generally used for solar cells. Those consisting of can be used as well.
- the present invention is applicable to any solar cell that can form a light-receiving surface electrode by a fire-through method.
- the substrate material is not particularly limited.
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
Abstract
Description
12:シリコン基板
14:n+層
16:p+層
18:反射防止膜
20:受光面電極
22:裏面電極
24:受光面
26:全面電極
28:帯状電極
Claims (8)
- 導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池電極用無鉛導電組成物であって、
前記ガラスフリットが酸化物換算で全ガラス組成物に対して、Bi2O310~29(mol%)、ZnO 15~30(mol%)、SiO2 0~20(mol%)、B2O3 20~33(mol%)、Li2O、Na2O、K2Oの合計量 8~21(mol%)の範囲内の割合で含む少なくとも一種の無鉛ガラスから成ることを特徴とする太陽電池電極用無鉛導電性組成物。 - 前記無鉛ガラスは、更に、Al2O3、P2O5、アルカリ土類酸化物のいずれかの他のガラス構成成分や添加物を含む請求項1の太陽電池電極用無鉛導電性組成物。
- 前記ガラスフリットは平均粒径が3.0(μm)以下である請求項1または2の太陽電池電極用無鉛導電性組成物。
- 前記ガラスフリットを組成物全体に対して2~6(wt%)の範囲内の割合で含むものである請求項1乃至3のいずれか1の太陽電池電極用無鉛導電性組成物。
- 前記導電性粉末は銀粉末である請求項1乃至4のいずれか1の太陽電池電極用無鉛導電性組成物。
- 前記銀粉末を64~90重量部、前記ベヒクルを5~20重量部の範囲内の割合で含むものである請求項5の太陽電池電極用無鉛導電性組成物。
- 前記銀粉末は、球状や鱗片状等の形状の粉末である請求項5または6の太陽電池電極用無鉛導電性組成物。
- 前記太陽電池の受光面電極および/または裏面電極として用いられる請求項1乃至7のいずれか1の太陽電池電極用無鉛導電性組成物。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/387,520 US8778232B2 (en) | 2009-07-30 | 2010-05-28 | Lead-free conductive compound for solar cell electrodes |
CN201080043514.5A CN102549763B (zh) | 2009-07-30 | 2010-05-28 | 太阳能电池电极用无铅导电性组合物 |
DE112010003112T DE112010003112T5 (de) | 2009-07-30 | 2010-05-28 | Bleifreie leitfähige verbindung für solarzellelektroden |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009177493A JP5649290B2 (ja) | 2009-07-30 | 2009-07-30 | 太陽電池電極用無鉛導電性組成物 |
JP2009-177493 | 2009-07-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2011013440A1 true WO2011013440A1 (ja) | 2011-02-03 |
Family
ID=43529104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2010/059154 WO2011013440A1 (ja) | 2009-07-30 | 2010-05-28 | 太陽電池電極用無鉛導電性組成物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8778232B2 (ja) |
JP (1) | JP5649290B2 (ja) |
KR (1) | KR20120039738A (ja) |
CN (1) | CN102549763B (ja) |
DE (1) | DE112010003112T5 (ja) |
TW (1) | TWI544496B (ja) |
WO (1) | WO2011013440A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014531702A (ja) * | 2011-08-26 | 2014-11-27 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | SINxおよび良好なBSF形成のためのファイアスルーアルミニウムペースト |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013011986A1 (ja) * | 2011-07-19 | 2013-01-24 | 日立化成工業株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 |
JP6027765B2 (ja) * | 2012-05-02 | 2016-11-16 | 株式会社ノリタケカンパニーリミテド | 太陽電池用無鉛導電性ペースト組成物 |
US9245663B2 (en) * | 2012-10-10 | 2016-01-26 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
TWI490184B (zh) * | 2012-12-11 | 2015-07-01 | Advanced Electronic Materials Inc | 無鉛奈米導電漿材料 |
KR102032280B1 (ko) * | 2013-04-25 | 2019-10-15 | 엘지전자 주식회사 | 태양 전지의 전극용 페이스트 조성물 |
KR101659131B1 (ko) * | 2013-11-12 | 2016-09-22 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US9761742B2 (en) * | 2013-12-03 | 2017-09-12 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
KR101721731B1 (ko) * | 2014-07-11 | 2017-03-31 | 삼성에스디아이 주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
CN104150775A (zh) * | 2014-08-01 | 2014-11-19 | 东华大学 | 一种用于光伏电池导电浆料的低熔点碲系玻璃及制备方法 |
KR20160035700A (ko) * | 2014-09-23 | 2016-04-01 | 삼성에스디아이 주식회사 | 고면저항 기판상에 형성된 전극을 포함하는 태양전지 |
JP6688500B2 (ja) * | 2016-06-29 | 2020-04-28 | ナミックス株式会社 | 導電性ペースト及び太陽電池 |
CN107117824A (zh) * | 2017-05-18 | 2017-09-01 | 江苏东昇光伏科技有限公司 | 一种太阳能电池用无铅玻璃粉及其制备方法 |
KR102060425B1 (ko) * | 2017-10-31 | 2020-02-11 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 및 이에 포함되는 유리 프릿, 그리고 태양 전지 |
KR102152837B1 (ko) * | 2018-11-30 | 2020-09-07 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 및 이를 이용하여 제조된 태양 전지 |
JP7444552B2 (ja) * | 2019-06-04 | 2024-03-06 | Agc株式会社 | ガラス組成物、ガラス組成物の製造方法、導電ペースト、及び太陽電池 |
KR20210111912A (ko) * | 2020-03-02 | 2021-09-14 | 창저우 퓨전 뉴 머티리얼 씨오. 엘티디. | 태양전지 전극 형성용 조성물 및 이로부터 형성된 태양전지 전극 |
CN114751647B (zh) * | 2022-03-29 | 2023-06-20 | 华南理工大学 | 一种易研磨的玻璃熔块及其制备方法与应用 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270035A (ja) * | 2001-03-14 | 2002-09-20 | Noritake Co Ltd | 導体ペースト、該ペースト調製用粉末材料およびセラミック電子部品製造方法 |
JP2006332032A (ja) * | 2005-04-14 | 2006-12-07 | E I Du Pont De Nemours & Co | 半導体デバイスの製造に使用される導電性組成物および方法 |
WO2008078374A1 (ja) * | 2006-12-25 | 2008-07-03 | Namics Corporation | 太陽電池用導電性ペースト |
WO2009041182A1 (ja) * | 2007-09-27 | 2009-04-02 | Murata Manufacturing Co., Ltd. | Ag電極ペースト、太陽電池セルおよびその製造方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19502653A1 (de) * | 1995-01-28 | 1996-08-01 | Cerdec Ag | Bleifreie Glaszusammensetzung und deren Verwendung |
US6171987B1 (en) * | 1997-12-29 | 2001-01-09 | Ben-Gurion University Of The Negev | Cadmium-free and lead-free glass compositions, thick film formulations containing them and uses thereof |
US6787068B1 (en) * | 1999-10-08 | 2004-09-07 | E. I. Du Pont De Nemours And Company | Conductor composition |
US7494607B2 (en) | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US7556748B2 (en) | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
US8093491B2 (en) | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
JP2007246382A (ja) * | 2006-02-16 | 2007-09-27 | Nippon Electric Glass Co Ltd | プラズマディスプレイパネル用誘電体材料 |
JP5219355B2 (ja) | 2006-10-27 | 2013-06-26 | 京セラ株式会社 | 太陽電池素子の製造方法 |
JP2009038022A (ja) | 2007-07-11 | 2009-02-19 | Toray Ind Inc | 電子放出素子 |
-
2009
- 2009-07-30 JP JP2009177493A patent/JP5649290B2/ja not_active Expired - Fee Related
-
2010
- 2010-05-28 KR KR1020127005029A patent/KR20120039738A/ko not_active Application Discontinuation
- 2010-05-28 CN CN201080043514.5A patent/CN102549763B/zh not_active Expired - Fee Related
- 2010-05-28 US US13/387,520 patent/US8778232B2/en not_active Expired - Fee Related
- 2010-05-28 WO PCT/JP2010/059154 patent/WO2011013440A1/ja active Application Filing
- 2010-05-28 DE DE112010003112T patent/DE112010003112T5/de not_active Withdrawn
- 2010-06-28 TW TW099121030A patent/TWI544496B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270035A (ja) * | 2001-03-14 | 2002-09-20 | Noritake Co Ltd | 導体ペースト、該ペースト調製用粉末材料およびセラミック電子部品製造方法 |
JP2006332032A (ja) * | 2005-04-14 | 2006-12-07 | E I Du Pont De Nemours & Co | 半導体デバイスの製造に使用される導電性組成物および方法 |
WO2008078374A1 (ja) * | 2006-12-25 | 2008-07-03 | Namics Corporation | 太陽電池用導電性ペースト |
WO2009041182A1 (ja) * | 2007-09-27 | 2009-04-02 | Murata Manufacturing Co., Ltd. | Ag電極ペースト、太陽電池セルおよびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2014531702A (ja) * | 2011-08-26 | 2014-11-27 | ヘレウス プレシャス メタルズ ノース アメリカ コンショホーケン エルエルシー | SINxおよび良好なBSF形成のためのファイアスルーアルミニウムペースト |
US9824790B2 (en) | 2011-08-26 | 2017-11-21 | Heraeus Precious Metals North America Conshohocken Llc | Fire through aluminum paste for SiNx and better BSF formation |
Also Published As
Publication number | Publication date |
---|---|
TW201108251A (en) | 2011-03-01 |
KR20120039738A (ko) | 2012-04-25 |
TWI544496B (zh) | 2016-08-01 |
US8778232B2 (en) | 2014-07-15 |
DE112010003112T5 (de) | 2012-10-04 |
US20120138872A1 (en) | 2012-06-07 |
CN102549763B (zh) | 2015-02-25 |
JP5649290B2 (ja) | 2015-01-07 |
JP2011035034A (ja) | 2011-02-17 |
CN102549763A (zh) | 2012-07-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5649290B2 (ja) | 太陽電池電極用無鉛導電性組成物 | |
JP5856178B2 (ja) | 太陽電池用無鉛導電性ペースト組成物 | |
JP5856277B1 (ja) | 太陽電池電極用ペーストおよび太陽電池セル | |
JP5059042B2 (ja) | 太陽電池電極用ペースト組成物 | |
JP5137923B2 (ja) | 太陽電池用電極ペースト組成物 | |
TWI778207B (zh) | 玻璃、玻璃粉末、導電糊料及太陽能電池 | |
EP3405961B1 (en) | Conductive paste, method, electrode and solar cell | |
TWI533329B (zh) | 太陽電池用導電性糊組成物 | |
JP6027765B2 (ja) | 太陽電池用無鉛導電性ペースト組成物 | |
TW201425260A (zh) | 太陽電池用導電性糊組成物 | |
JP2019127404A (ja) | ガラス、ガラスの製造方法、導電ペーストおよび太陽電池 | |
CN114380507A (zh) | 一种适应晶硅p+层接触的厚膜银浆用玻璃粉及其制备方法 | |
JP6027968B2 (ja) | 太陽電池用導電性ペースト組成物、太陽電池、および、太陽電池の製造方法 | |
JP5279699B2 (ja) | 太陽電池用導電性ペースト組成物 | |
JP2020083670A (ja) | ガラス組成物、ガラス粉末、導電ペーストおよび太陽電池 | |
JP2011035035A (ja) | 太陽電池電極用導電性組成物 | |
KR20230055847A (ko) | 태양 전지 전극 형성용 유리 프릿 조성물, 이를 사용하여 형성된 태양 전지용 전극, 및 상기 전극을 포함하는 태양 전지 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 201080043514.5 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 10804187 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 1120100031126 Country of ref document: DE Ref document number: 112010003112 Country of ref document: DE |
|
WWE | Wipo information: entry into national phase |
Ref document number: 13387520 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20127005029 Country of ref document: KR Kind code of ref document: A |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 10804187 Country of ref document: EP Kind code of ref document: A1 |