JP2011035034A - 太陽電池電極用無鉛導電性組成物 - Google Patents
太陽電池電極用無鉛導電性組成物 Download PDFInfo
- Publication number
- JP2011035034A JP2011035034A JP2009177493A JP2009177493A JP2011035034A JP 2011035034 A JP2011035034 A JP 2011035034A JP 2009177493 A JP2009177493 A JP 2009177493A JP 2009177493 A JP2009177493 A JP 2009177493A JP 2011035034 A JP2011035034 A JP 2011035034A
- Authority
- JP
- Japan
- Prior art keywords
- mol
- electrode
- glass
- solar cell
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 239000011521 glass Substances 0.000 claims abstract description 78
- 229910052708 sodium Inorganic materials 0.000 claims abstract description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 19
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 claims description 18
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- 239000000843 powder Substances 0.000 claims description 10
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 7
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 36
- 239000010408 film Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 18
- 239000011787 zinc oxide Substances 0.000 description 18
- 230000000052 comparative effect Effects 0.000 description 17
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000002003 electrode paste Substances 0.000 description 13
- 239000010703 silicon Substances 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 238000010304 firing Methods 0.000 description 12
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004020 conductor Substances 0.000 description 8
- 230000003247 decreasing effect Effects 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000004332 silver Substances 0.000 description 8
- 239000011734 sodium Substances 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000000654 additive Substances 0.000 description 6
- 239000003513 alkali Substances 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 239000011701 zinc Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 230000000996 additive effect Effects 0.000 description 5
- 239000000292 calcium oxide Substances 0.000 description 5
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 5
- 230000007774 longterm Effects 0.000 description 5
- 239000002994 raw material Substances 0.000 description 5
- 239000002904 solvent Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 239000005355 lead glass Substances 0.000 description 4
- BWHMMNNQKKPAPP-UHFFFAOYSA-L potassium carbonate Chemical compound [K+].[K+].[O-]C([O-])=O BWHMMNNQKKPAPP-UHFFFAOYSA-L 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 150000001875 compounds Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910000287 alkaline earth metal oxide Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910000416 bismuth oxide Inorganic materials 0.000 description 2
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 2
- 239000004327 boric acid Substances 0.000 description 2
- 150000004649 carbonic acid derivatives Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- TYIXMATWDRGMPF-UHFFFAOYSA-N dibismuth;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Bi+3].[Bi+3] TYIXMATWDRGMPF-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- 238000007496 glass forming Methods 0.000 description 2
- XGZVUEUWXADBQD-UHFFFAOYSA-L lithium carbonate Chemical compound [Li+].[Li+].[O-]C([O-])=O XGZVUEUWXADBQD-UHFFFAOYSA-L 0.000 description 2
- 229910052808 lithium carbonate Inorganic materials 0.000 description 2
- 150000002823 nitrates Chemical class 0.000 description 2
- -1 other compounds Chemical class 0.000 description 2
- 229910000027 potassium carbonate Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 1
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 150000004679 hydroxides Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/80—Constructional details
- H10K10/82—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/52—PV systems with concentrators
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Geochemistry & Mineralogy (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Physics & Mathematics (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Dispersion Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Conductive Materials (AREA)
- Glass Compositions (AREA)
Abstract
【解決手段】太陽電池電極用ペーストは、これを構成するガラスフリットが、Bi2O3が10〜29(mol%)、B2O3が20〜33(mol%)、SiO2が20(mol%)以下、ZnOが15〜30(mol%)、アルカリ成分(Li2O、Na2O、K2Oの合計)が8〜21(mol%)、他の成分(Al2O3、CaO、BaO、P2O5)の合計が18(mol%)以下の範囲内の組成を有する無鉛ガラスから成ることから、これを用いて太陽電池10の受光面電極20を形成すると、無鉛でありながら、F.F.値が75(%)以上と電気的特性に優れた電極が得られる利点がある。
【選択図】図1
Description
Claims (3)
- 導電性粉末と、ガラスフリットと、ベヒクルとを含む太陽電池電極用無鉛導電組成物であって、
前記ガラスフリットが酸化物換算で全ガラス組成物に対して、Bi2O3 10〜29(mol%)、ZnO 15〜30(mol%)、SiO2 0〜20(mol%)、B2O3 20〜33(mol%)、Li2O、Na2O、K2Oの合計量 8〜21(mol%)の範囲内の割合で含む少なくとも一種の無鉛ガラスから成ることを特徴とする太陽電池電極用無鉛導電性組成物。 - 前記ガラスフリットをペースト全体に対して2〜6(wt%)の範囲内の割合で含むものである請求項1の太陽電池電極用無鉛導電性組成物。
- 前記導電性粉末は銀粉末である請求項1または請求項2の太陽電池電極用無鉛導電性組成物。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009177493A JP5649290B2 (ja) | 2009-07-30 | 2009-07-30 | 太陽電池電極用無鉛導電性組成物 |
PCT/JP2010/059154 WO2011013440A1 (ja) | 2009-07-30 | 2010-05-28 | 太陽電池電極用無鉛導電性組成物 |
DE112010003112T DE112010003112T5 (de) | 2009-07-30 | 2010-05-28 | Bleifreie leitfähige verbindung für solarzellelektroden |
CN201080043514.5A CN102549763B (zh) | 2009-07-30 | 2010-05-28 | 太阳能电池电极用无铅导电性组合物 |
KR1020127005029A KR20120039738A (ko) | 2009-07-30 | 2010-05-28 | 태양 전지 전극용 무연 도전성 조성물 |
US13/387,520 US8778232B2 (en) | 2009-07-30 | 2010-05-28 | Lead-free conductive compound for solar cell electrodes |
TW099121030A TWI544496B (zh) | 2009-07-30 | 2010-06-28 | Lead-free conductive composition for solar cell electrodes |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009177493A JP5649290B2 (ja) | 2009-07-30 | 2009-07-30 | 太陽電池電極用無鉛導電性組成物 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2011035034A true JP2011035034A (ja) | 2011-02-17 |
JP5649290B2 JP5649290B2 (ja) | 2015-01-07 |
Family
ID=43529104
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009177493A Expired - Fee Related JP5649290B2 (ja) | 2009-07-30 | 2009-07-30 | 太陽電池電極用無鉛導電性組成物 |
Country Status (7)
Country | Link |
---|---|
US (1) | US8778232B2 (ja) |
JP (1) | JP5649290B2 (ja) |
KR (1) | KR20120039738A (ja) |
CN (1) | CN102549763B (ja) |
DE (1) | DE112010003112T5 (ja) |
TW (1) | TWI544496B (ja) |
WO (1) | WO2011013440A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013232609A (ja) * | 2012-05-02 | 2013-11-14 | Noritake Co Ltd | 太陽電池用導電性ペースト組成物 |
CN114751647A (zh) * | 2022-03-29 | 2022-07-15 | 华南理工大学 | 一种易研磨的玻璃熔块及其制备方法与应用 |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5176159B1 (ja) * | 2011-07-19 | 2013-04-03 | 日立化成株式会社 | n型拡散層形成組成物、n型拡散層の製造方法、及び太陽電池素子の製造方法 |
CN103998387B (zh) | 2011-08-26 | 2017-12-08 | 赫劳斯贵金属北美康舍霍肯有限责任公司 | 用于SINx和更好BSF形成的烧透铝膏 |
US9245663B2 (en) | 2012-10-10 | 2016-01-26 | E I Du Pont De Nemours And Company | Thick film silver paste and its use in the manufacture of semiconductor devices |
TWI490184B (zh) * | 2012-12-11 | 2015-07-01 | Advanced Electronic Materials Inc | 無鉛奈米導電漿材料 |
KR102032280B1 (ko) * | 2013-04-25 | 2019-10-15 | 엘지전자 주식회사 | 태양 전지의 전극용 페이스트 조성물 |
KR101659131B1 (ko) * | 2013-11-12 | 2016-09-22 | 제일모직주식회사 | 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극 |
US9761742B2 (en) * | 2013-12-03 | 2017-09-12 | E I Du Pont De Nemours And Company | Conductive paste composition and semiconductor devices made therewith |
KR101721731B1 (ko) * | 2014-07-11 | 2017-03-31 | 삼성에스디아이 주식회사 | 태양전지 전극용 페이스트 및 이로부터 제조된 전극 |
CN104150775A (zh) * | 2014-08-01 | 2014-11-19 | 东华大学 | 一种用于光伏电池导电浆料的低熔点碲系玻璃及制备方法 |
KR20160035700A (ko) * | 2014-09-23 | 2016-04-01 | 삼성에스디아이 주식회사 | 고면저항 기판상에 형성된 전극을 포함하는 태양전지 |
JP6688500B2 (ja) * | 2016-06-29 | 2020-04-28 | ナミックス株式会社 | 導電性ペースト及び太陽電池 |
CN107117824A (zh) * | 2017-05-18 | 2017-09-01 | 江苏东昇光伏科技有限公司 | 一种太阳能电池用无铅玻璃粉及其制备方法 |
KR102060425B1 (ko) * | 2017-10-31 | 2020-02-11 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 및 이에 포함되는 유리 프릿, 그리고 태양 전지 |
KR102152837B1 (ko) * | 2018-11-30 | 2020-09-07 | 엘에스니꼬동제련 주식회사 | 태양전지 전극용 도전성 페이스트 및 이를 이용하여 제조된 태양 전지 |
JP7444552B2 (ja) * | 2019-06-04 | 2024-03-06 | Agc株式会社 | ガラス組成物、ガラス組成物の製造方法、導電ペースト、及び太陽電池 |
KR20210111912A (ko) * | 2020-03-02 | 2021-09-14 | 창저우 퓨전 뉴 머티리얼 씨오. 엘티디. | 태양전지 전극 형성용 조성물 및 이로부터 형성된 태양전지 전극 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270035A (ja) * | 2001-03-14 | 2002-09-20 | Noritake Co Ltd | 導体ペースト、該ペースト調製用粉末材料およびセラミック電子部品製造方法 |
JP2006332032A (ja) * | 2005-04-14 | 2006-12-07 | E I Du Pont De Nemours & Co | 半導体デバイスの製造に使用される導電性組成物および方法 |
WO2009041182A1 (ja) * | 2007-09-27 | 2009-04-02 | Murata Manufacturing Co., Ltd. | Ag電極ペースト、太陽電池セルおよびその製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19502653A1 (de) * | 1995-01-28 | 1996-08-01 | Cerdec Ag | Bleifreie Glaszusammensetzung und deren Verwendung |
US6171987B1 (en) * | 1997-12-29 | 2001-01-09 | Ben-Gurion University Of The Negev | Cadmium-free and lead-free glass compositions, thick film formulations containing them and uses thereof |
US6787068B1 (en) * | 1999-10-08 | 2004-09-07 | E. I. Du Pont De Nemours And Company | Conductor composition |
US7494607B2 (en) | 2005-04-14 | 2009-02-24 | E.I. Du Pont De Nemours And Company | Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom |
US7556748B2 (en) | 2005-04-14 | 2009-07-07 | E. I. Du Pont De Nemours And Company | Method of manufacture of semiconductor device and conductive compositions used therein |
US8093491B2 (en) | 2005-06-03 | 2012-01-10 | Ferro Corporation | Lead free solar cell contacts |
JP2007246382A (ja) * | 2006-02-16 | 2007-09-27 | Nippon Electric Glass Co Ltd | プラズマディスプレイパネル用誘電体材料 |
JP5219355B2 (ja) | 2006-10-27 | 2013-06-26 | 京セラ株式会社 | 太陽電池素子の製造方法 |
US20100096014A1 (en) * | 2006-12-25 | 2010-04-22 | Hideyo Iida | Conductive paste for solar cell |
JP2009038022A (ja) | 2007-07-11 | 2009-02-19 | Toray Ind Inc | 電子放出素子 |
-
2009
- 2009-07-30 JP JP2009177493A patent/JP5649290B2/ja not_active Expired - Fee Related
-
2010
- 2010-05-28 DE DE112010003112T patent/DE112010003112T5/de not_active Withdrawn
- 2010-05-28 CN CN201080043514.5A patent/CN102549763B/zh not_active Expired - Fee Related
- 2010-05-28 US US13/387,520 patent/US8778232B2/en not_active Expired - Fee Related
- 2010-05-28 WO PCT/JP2010/059154 patent/WO2011013440A1/ja active Application Filing
- 2010-05-28 KR KR1020127005029A patent/KR20120039738A/ko not_active Application Discontinuation
- 2010-06-28 TW TW099121030A patent/TWI544496B/zh not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002270035A (ja) * | 2001-03-14 | 2002-09-20 | Noritake Co Ltd | 導体ペースト、該ペースト調製用粉末材料およびセラミック電子部品製造方法 |
JP2006332032A (ja) * | 2005-04-14 | 2006-12-07 | E I Du Pont De Nemours & Co | 半導体デバイスの製造に使用される導電性組成物および方法 |
WO2009041182A1 (ja) * | 2007-09-27 | 2009-04-02 | Murata Manufacturing Co., Ltd. | Ag電極ペースト、太陽電池セルおよびその製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013232609A (ja) * | 2012-05-02 | 2013-11-14 | Noritake Co Ltd | 太陽電池用導電性ペースト組成物 |
CN114751647A (zh) * | 2022-03-29 | 2022-07-15 | 华南理工大学 | 一种易研磨的玻璃熔块及其制备方法与应用 |
Also Published As
Publication number | Publication date |
---|---|
KR20120039738A (ko) | 2012-04-25 |
JP5649290B2 (ja) | 2015-01-07 |
US20120138872A1 (en) | 2012-06-07 |
TW201108251A (en) | 2011-03-01 |
US8778232B2 (en) | 2014-07-15 |
DE112010003112T5 (de) | 2012-10-04 |
CN102549763B (zh) | 2015-02-25 |
WO2011013440A1 (ja) | 2011-02-03 |
CN102549763A (zh) | 2012-07-04 |
TWI544496B (zh) | 2016-08-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5649290B2 (ja) | 太陽電池電極用無鉛導電性組成物 | |
JP5856178B2 (ja) | 太陽電池用無鉛導電性ペースト組成物 | |
JP5059042B2 (ja) | 太陽電池電極用ペースト組成物 | |
JP5137923B2 (ja) | 太陽電池用電極ペースト組成物 | |
TWI778207B (zh) | 玻璃、玻璃粉末、導電糊料及太陽能電池 | |
TWI533329B (zh) | 太陽電池用導電性糊組成物 | |
EP2689464A2 (en) | Conductive paste composition and semiconductor devices made therewith | |
JP6027765B2 (ja) | 太陽電池用無鉛導電性ペースト組成物 | |
TW201425260A (zh) | 太陽電池用導電性糊組成物 | |
JP2019127404A (ja) | ガラス、ガラスの製造方法、導電ペーストおよび太陽電池 | |
CN114380507A (zh) | 一种适应晶硅p+层接触的厚膜银浆用玻璃粉及其制备方法 | |
JP6027968B2 (ja) | 太陽電池用導電性ペースト組成物、太陽電池、および、太陽電池の製造方法 | |
JP5279699B2 (ja) | 太陽電池用導電性ペースト組成物 | |
JP2011035035A (ja) | 太陽電池電極用導電性組成物 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20120605 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130404 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130625 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130925 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20131002 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20131025 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20140922 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20141111 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5649290 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |