WO2009034865A1 - 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 - Google Patents

成膜装置の排気系構造、成膜装置、および排ガスの処理方法 Download PDF

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Publication number
WO2009034865A1
WO2009034865A1 PCT/JP2008/065661 JP2008065661W WO2009034865A1 WO 2009034865 A1 WO2009034865 A1 WO 2009034865A1 JP 2008065661 W JP2008065661 W JP 2008065661W WO 2009034865 A1 WO2009034865 A1 WO 2009034865A1
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WO
WIPO (PCT)
Prior art keywords
forming apparatus
film forming
exhaust pipe
exhaust
downstream
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/065661
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
Kenji Matsumoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020127003984A priority Critical patent/KR101209997B1/ko
Priority to US12/677,417 priority patent/US20110020544A1/en
Priority to CN200880106461XA priority patent/CN101802256B/zh
Priority to KR1020107005256A priority patent/KR101151513B1/ko
Publication of WO2009034865A1 publication Critical patent/WO2009034865A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/043—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers for electroplating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/055—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition
    • H10W20/0552—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition by diffusing metallic dopants to react with dielectrics
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
PCT/JP2008/065661 2007-09-10 2008-09-01 成膜装置の排気系構造、成膜装置、および排ガスの処理方法 Ceased WO2009034865A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020127003984A KR101209997B1 (ko) 2007-09-10 2008-09-01 성막 장치의 배기계 구조, 성막 장치 및 배기 가스의 처리 방법
US12/677,417 US20110020544A1 (en) 2007-09-10 2008-09-01 Exhaust system structure of film formation apparatus, film formation apparatus, and exhaust gas processing method
CN200880106461XA CN101802256B (zh) 2007-09-10 2008-09-01 成膜装置的排气系统结构、成膜装置和排出气体的处理方法
KR1020107005256A KR101151513B1 (ko) 2007-09-10 2008-09-01 성막 장치의 배기계 구조, 성막 장치 및 배기 가스의 처리 방법

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-233533 2007-09-10
JP2007233533A JP5133013B2 (ja) 2007-09-10 2007-09-10 成膜装置の排気系構造、成膜装置、および排ガスの処理方法

Publications (1)

Publication Number Publication Date
WO2009034865A1 true WO2009034865A1 (ja) 2009-03-19

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PCT/JP2008/065661 Ceased WO2009034865A1 (ja) 2007-09-10 2008-09-01 成膜装置の排気系構造、成膜装置、および排ガスの処理方法

Country Status (5)

Country Link
US (1) US20110020544A1 (https=)
JP (1) JP5133013B2 (https=)
KR (2) KR101209997B1 (https=)
CN (1) CN101802256B (https=)
WO (1) WO2009034865A1 (https=)

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JP2010533066A (ja) * 2007-07-10 2010-10-21 イノヴァライト インコーポレイテッド 流通式プラズマ反応器においてｉｖ族ナノ粒子を生成するための方法及び装置
US8408025B2 (en) 2008-08-07 2013-04-02 Tokyo Electron Limited Raw material recovery method and trapping mechanism for recovering raw material
US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles

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JP5696348B2 (ja) * 2008-08-09 2015-04-08 東京エレクトロン株式会社 金属回収方法、金属回収装置、排気系及びこれを用いた成膜装置
US20110195202A1 (en) * 2010-02-11 2011-08-11 Applied Materials, Inc. Oxygen pump purge to prevent reactive powder explosion
JP2012117127A (ja) * 2010-12-02 2012-06-21 Sumitomo Heavy Ind Ltd 成膜装置、成膜基板製造方法、および成膜基板
US10954594B2 (en) * 2015-09-30 2021-03-23 Applied Materials, Inc. High temperature vapor delivery system and method
JP6602709B2 (ja) * 2016-03-23 2019-11-06 大陽日酸株式会社 排ガス処理装置、及び排ガス処理方法
JP6559618B2 (ja) * 2016-06-23 2019-08-14 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置、およびプログラム
JP6828674B2 (ja) * 2017-12-20 2021-02-10 株式会社Sumco クリーニング方法、シリコン単結晶の製造方法、および、クリーニング装置
US11236021B2 (en) * 2017-12-22 2022-02-01 Goodrich Corporation Mitigating pyrophoric deposits in exhaust piping during SIC CVI/CVD processes by introducing water vapor into an outlet portion of a reaction chamber
KR102054411B1 (ko) * 2017-12-28 2019-12-10 (주) 엔피홀딩스 배기유체 처리장치 및 기판 처리 시스템
KR102078584B1 (ko) * 2017-12-28 2020-02-19 (주) 엔피홀딩스 배기유체 처리장치 및 기판 처리 시스템
JP7175782B2 (ja) * 2019-01-25 2022-11-21 株式会社東芝 ケイ素含有物質形成装置
JP6900412B2 (ja) * 2019-03-20 2021-07-07 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 基板処理装置及び半導体装置の製造方法及びプログラム
CN111013303A (zh) * 2019-12-09 2020-04-17 木昇半导体科技(苏州)有限公司 氮化镓颗粒回收清扫真空系统
KR102250066B1 (ko) * 2020-02-17 2021-05-10 김홍석 반도체 및 에프피디의 공정챔버 배기관 내벽에 생성되는 불순물 감소 장치
TWI783382B (zh) * 2020-03-18 2022-11-11 日商國際電氣股份有限公司 基板處理裝置，排氣裝置及半導體裝置的製造方法
KR20220091744A (ko) 2020-12-24 2022-07-01 삼성전자주식회사 파우더 부산물 억제를 위해 흡착제를 포함하는 배기 가스 처리 시스템
KR102800611B1 (ko) * 2020-12-30 2025-04-29 세메스 주식회사 기판 처리 장치 및 이를 운용하는 방법
KR102521535B1 (ko) * 2021-09-02 2023-04-13 삼성전자주식회사 기판 처리 공정의 배출 물질 포집 장치 및 방법, 및 이 포집 장치를 포함하는 기판 처리 장치
WO2024039512A1 (en) * 2022-08-16 2024-02-22 Kulicke And Soffa Industries, Inc. Bonding systems for bonding a semiconductor element to a substrate, and related methods

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US8471170B2 (en) 2007-07-10 2013-06-25 Innovalight, Inc. Methods and apparatus for the production of group IV nanoparticles in a flow-through plasma reactor
US8968438B2 (en) 2007-07-10 2015-03-03 Innovalight, Inc. Methods and apparatus for the in situ collection of nucleated particles
US8408025B2 (en) 2008-08-07 2013-04-02 Tokyo Electron Limited Raw material recovery method and trapping mechanism for recovering raw material

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KR101151513B1 (ko) 2012-05-31
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US20110020544A1 (en) 2011-01-27

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