WO2009028738A1 - 発光モジュールおよびその製造方法 - Google Patents
発光モジュールおよびその製造方法 Download PDFInfo
- Publication number
- WO2009028738A1 WO2009028738A1 PCT/JP2008/066130 JP2008066130W WO2009028738A1 WO 2009028738 A1 WO2009028738 A1 WO 2009028738A1 JP 2008066130 W JP2008066130 W JP 2008066130W WO 2009028738 A1 WO2009028738 A1 WO 2009028738A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light emitting
- substrate
- metal substrate
- emitting element
- emitting module
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 145
- 229910052751 metal Inorganic materials 0.000 claims abstract description 101
- 239000002184 metal Substances 0.000 claims abstract description 101
- 229920005989 resin Polymers 0.000 claims abstract description 67
- 239000011347 resin Substances 0.000 claims abstract description 67
- 238000007789 sealing Methods 0.000 claims abstract description 59
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000010410 layer Substances 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 23
- 239000000945 filler Substances 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 11
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 238000003825 pressing Methods 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000013459 approach Methods 0.000 claims description 2
- 238000009713 electroplating Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract 1
- 230000000630 rising effect Effects 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011888 foil Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 229910001111 Fine metal Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000002310 reflectometry Methods 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000003205 fragrance Substances 0.000 description 1
- 230000008642 heat stress Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85909—Post-treatment of the connector or wire bonding area
- H01L2224/8592—Applying permanent coating, e.g. protective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/021—Components thermally connected to metal substrates or heat-sinks by insert mounting
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/05—Insulated conductive substrates, e.g. insulated metal substrate
- H05K1/056—Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer
Definitions
- the present invention relates to a light emitting module and a method for manufacturing the same, and more particularly to a light emitting module on which a high luminance light emitting element is mounted and a method for manufacturing the same.
- LED Light eMidtiniDiode
- LED Light eMidtiniDiode
- LED When LED is used for lighting equipment, the brightness is insufficient with only one LED, so a large number of LEDs are mounted on one lighting equipment.
- LEDs emit a large amount of heat when they emit light, so if LEDs are mounted on a mounting board made of a resin material that is inferior in heat dissipation, or if individual LEDs are packaged individually, the heat released from the LEDs There is a problem that the LED performance deteriorates early without being successfully released to the outside.
- Japanese Patent Laid-Open No. 2 0 0 6-1 0 0 7 5 3 discloses a technique for mounting an LED on an upper surface of a metal substrate made of aluminum in order to release heat generated from the LED to the outside. Yes.
- the upper surface of the metal substrate 1 1 is covered with an insulating resin 1 3, and this insulating resin 1 3
- a light emitting element 15 (LED) is mounted on the upper surface of the conductive pattern 14 formed on the upper surface of the substrate. With this configuration, the heat generated from the light emitting element 16 is released to the outside through the conductive pattern 14, the insulating resin 13 and the metal substrate 11. Disclosure of the invention
- the light emitting element 15 which is an LED 1 5 force S between the conductive pattern 14 to be fixed and the metal substrate 1 1 Insulating resin 1 3 is interposed between them.
- insulating resin 13 is filled with a high filler to improve heat dissipation, but its thermal resistance is higher than that of metal. Therefore, for example, when a high-brightness LED, in which a large current of 2 OO mA or more flows, emits light as the light-emitting element 16, the structure described in Japanese Patent Laid-Open No. 2 0 06-1 0 0 75 3. There was a risk that the heat dissipation was insufficient.
- the adhesion between the sealing resin for sealing the light emitting element 15 and another member was insufficient, the heat stress caused by the temperature change under the usage conditions. In other words, there was a risk that the sealing resin peeled off from the substrate.
- the present invention has been made in view of the above-described problems, and a main object of the present invention is to improve heat dissipation and improve adhesion between a sealing resin for sealing a light emitting element and other members.
- a light emitting module and a method for manufacturing the same are provided.
- the light emitting module of the present invention has a first main surface and a second main surface and a metal substrate made of a metal, an insulating layer covering the first main surface of the metal substrate, and formed on the surface of the insulating layer A conductive pattern, an opening provided by partially removing the insulating layer, a recess provided by forming the metal substrate exposed from the opening into a concave shape, and the recess And a light emitting element housed and electrically connected to the conductive pattern.
- the light emitting module manufacturing method includes a step of forming a conductive pattern on a surface of an insulating layer covering one main surface of a metal substrate, a part of the insulating layer is removed, and an opening is provided.
- a step of partially exposing the one main surface of the metal substrate from the opening; a step of forming a recess by forming the metal substrate exposed from the opening; and a light emission in the recess A step of housing an element, and a step of electrically connecting the light emitting element and the conductive pattern.
- the light emitting module of the present invention includes a substrate having a first main surface and a second main surface, a conductive pattern formed on the first main surface of the substrate, and the substrate from the first main surface in a circular shape. And a light emitting element housed in the recess and electrically connected to the conductive pattern, and the first main surface of the substrate in a region surrounding the recess.
- a convex portion formed in a convex shape; and a sealing resin that fills the concave portion so as to cover the light emitting element and adheres closely to the convex portion.
- the method for manufacturing a light emitting module of the present invention includes a step of forming a conductive pattern on one main surface of a substrate, and pressing the substrate so that the substrate is recessed from the first main surface.
- a step of forming a convex portion by forming the one main surface of the substrate in a region surrounding the concave portion in a convex shape, and housing the light emitting element in the concave portion, And electrically connecting the conductive pattern, and filling the recess so as to cover the light emitting element, and forming a sealing resin so as to be in close contact with the protrusion It is characterized by comprising.
- the insulating layer covering the metal substrate is partially removed to provide an opening, the main surface of the metal substrate exposed from the opening is the incense fragrance ⁇ , and the light emitting element is formed in the recess. Is fixed. Therefore, since the light emitting element is directly fixed to the concave portion of the metal substrate, the heat generated from the light emitting element is released to the outside through the metal substrate.
- the convex portion having the convex surface of the substrate is provided so that the light emitting element is accommodated and the concave portion is surrounded, and the sealing resin filled in the concave portion is convex to seal the light emitting element. It is in contact with the shaped part. With this configuration, the sealing resin adheres to the convex portion provided on the surface of the substrate, and the separation of the sealing resin from the substrate is prevented.
- the substrate is formed in a concave shape, and the light emitting element is accommodated in the concave portion. Therefore, the heat generated from the light emitting element can be discharged to the outside satisfactorily via a substrate made of metal force, for example.
- the convex portions around it can be formed at the same time as the concave portions described above, so that the number of X is increased. Protrusions can be formed with suppression
- FIG. 1 is a diagram showing the structure of a light emitting module according to the present invention, and ( ⁇ ) is a perspective view.
- FIG. 2 is a diagram showing a method for producing the light emitting module
- ( ⁇ ) and ( ⁇ ) are cross-sectional views
- (C) is a plan view
- FIG. 3 is a view showing a method for manufacturing a light emitting module according to the present invention.
- (C) is a cross-sectional view
- (D) is a plan view
- FIG. 4 is a view showing a method for producing a light emitting module of the present invention
- (A) to (D) are cross-sectional views.
- FIG. 5 is a view showing a method for manufacturing the light emitting module of the present invention
- (A) is a cross-sectional view
- (B) is a plan view
- FIG. 6 shows the present invention. It is a figure which shows the manufacturing method of the light emitting module of
- FIG. 10 is a view showing a method for producing the light emitting module of the present invention.
- FIG. 1 (A) is a perspective view of the light emitting module 10
- FIG. 1 (B) is a view of FIG. 1 (A).
- FIG. 1 (C) is a cross-sectional view taken along line C-C in FIG. 1 (A).
- the light emitting module 10 has a metal substrate 1 2 and a metal plate.
- the recess 18 provided by making the upper surface of the metal substrate 1 2 partially concave, and the metal substrate 1 2 around the recess 1 8 Consists mainly of a convex part 11 having a convex upper surface, a light emitting element 20 accommodated in the concave part 18, and a sealing resin 3 2 covering the light emitting element 20.
- the light emitting module 10 is composed of a single plate-like metal substrate 1
- a plurality of light emitting elements 20 are mounted on the upper surface of 2. Then, these light emitting elements 20 are connected in series via the conductive pattern 14 and the fine metal wires 16. By supplying a direct current to the light emitting module 10 having such a configuration, light of a predetermined color is emitted from the light emitting element 20, and the light emitting module 10 is a lighting fixture such as a fluorescent lamp. It functions as.
- the metal substrate 12 is a plate made of a metal such as copper (Cu) or aluminum (A1), and has a thickness of 0.5 mm to 2 • 0 m and a width of, for example, 2 m or more Upper 2 O mm or less, and the length is 5 cm or more and 5 O cm or less.
- the metal substrate 12 is made of aluminum, the upper and lower surfaces of the metal substrate 12 are covered with an oxide film 2 2 (alumite film: Al 2 0 3 ) obtained by anodizing aluminum. Is done.
- the thickness of the oxide film 2 2 covering the upper surface and the lower surface of the metal substrate 12 is, for example, 1; um or more and 10 z in or less.
- the metal substrate 12 has a very long and narrow shape because a large number of light emitting elements 20 are arranged in a row in order to secure a predetermined light quantity.
- External connection terminals connected to an external power source are formed at both ends of the metal substrate 1 2 in the longitudinal direction. This terminal may be a plug-in type connector, or may be one in which the wiring is soldered to the conductive pattern 14.
- the side surface of the metal substrate 12 has a shape protruding outward. Specifically, the first inclined portion 3 6 that inclines outward from the upper surface of the metal substrate 12 and the second inclined portion 3 that inclines outward from the lower surface of the metal substrate 12 2. 8, the side surface of the metal substrate 1 2 is configured.
- the area of the side surface of the metal substrate 12 can be increased compared to a flat state, and the amount of heat released to the outside from the side surface of the metal substrate 12 can be increased. It is done.
- the side surface of the metal substrate 12 is not covered with the oxide film 2 2 having a high thermal resistance, and the metal material with excellent heat dissipation is exposed. Is improved.
- the upper surface of the metal substrate 12 is covered with an insulating layer 2 4 made of a resin mixed with a filler such as A 1 2 0 3 .
- the thickness of the insulating layer 24 is, for example, about 50 ⁇ m.
- the insulating layer 24 has a function of insulating the metal substrate 12 from the conductive pattern 14.
- a large amount of filler is mixed in the insulating layer 24, which makes it possible to approximate the thermal expansion coefficient of the insulating layer 24 to that of the metal substrate 12.
- the thermal resistance of the insulating layer 24 is reduced.
- the filler is 70% by volume or more and 80% by volume. / 0 or less included.
- the average particle size of the filler contained is, for example, about 4; um.
- conductive pattern 14 is formed on the upper surface of insulating layer 24, and is connected to each light emitting element 20 through a path. It functions as a part.
- the conductive pattern 14 is formed by etching a conductive foil made of copper or the like provided on the upper surface of the insulating layer 24.
- metal substrate 1 2 6 is formed on the upper surface of insulating layer 24.
- the conductive patterns 14 provided at both ends of the slab function as external connection terminals that contribute to external connection.
- the light-emitting element 2 ⁇ has two electrodes (an anode electrode and a force-sword electrode) on the upper surface, and emits light of a predetermined color.
- the light emitting element 20 has a configuration in which an N-type semiconductor layer and a P-type semiconductor layer are stacked on the upper surface of a semiconductor substrate made of GaAs, GaN, or the like.
- the thickness of the light emitting element 20 emitting the red light is about 100 to 30; um.
- the light emitting element 20 that emits green light has a thickness of about 100 ⁇
- the light emitting element 20 that emits blue light has a thickness of about 100 m.
- the configuration of the light emitting module 10 of the present invention is excellent in heat dissipation, and is particularly effective for, for example, the light emitting element 20 (power LED) through which a current of 100 mA or more passes.
- FIG. 1 (B) light emitted from the light emitting element 20 is indicated by a white arrow.
- the light emitted from the upper surface of the light emitting element 20 is directly irradiated upward.
- the light emitted from the side surface of the light emitting element 20 to the side is reflected upward by the side surface 30 of the recess 18.
- the light emitting element 20 is covered with the sealing resin 3 2 mixed with the phosphor, the light generated from the light emitting element 20 is transmitted through the sealing resin 3 2 and emitted to the outside. Is done.
- two electrodes (an anode electrode and a force-sword electrode) are provided on the upper surface of the light emitting element 20, and these electrodes are connected to the conductive pattern 14 via a metal thin wire 16.
- the connection portion between the electrode of the light emitting element 20 and the thin metal wire 16 is covered with the sealing tree 3.2.
- the opening 4 8 is provided by partially removing the insulating layer 24 from a circular shape. Then, by recessing the upper surface of the metal substrate 12 exposed from the inside of the opening 4 8 in a concave shape, a recess 1 8 is formed, and the light emitting element 2 0 is fixed to the bottom surface 2 8 of the recess 1 8. Yes. Further, the light emitting element 20 is covered with the sealing resin 3 2 filled in the recess 18 and the opening 48. Also recessed 1 8 is provided with a convex portion 11 1 in which the upper surface of the metal substrate 12 2 is formed in a convex shape, and the sealing resin 3 2 is also in close contact with the convex portion 11.
- the concave portion 18 is provided by forming the metal substrate 12 2 in a concave shape from the top surface, and the bottom surface 28 has a circular shape. Further, the side surface of the concave portion 18 functions as a reflector for reflecting light emitted from the side surface of the light emitting element 20 to the side, and the outer side and the bottom surface of the side surface 30.
- the angle 0 formed by 2 8 is, for example, not less than 40 degrees and not more than 60 degrees. Further, the depth of the concave portion 18 may be longer or shorter than the thickness of the light emitting element 20.
- the thickness of the recess 18 is longer than the sum of the thickness of the light emitting element 20 and the bonding material 26, the light emitting element 20 is accommodated in the recess 18 and the upper surface of the light emitting element 20 is Can be positioned below the upper surface of the metal substrate 12.
- the bottom surface 2 8 of the recess 18, the side surface 30, and the upper surface of the metal substrate 12 at the periphery thereof are covered with a coating layer 3 4.
- a coating layer 3 4 As the material for the covering layer 34, gold (A u) or silver (A g) formed by a plating process is employed. Further, when a material (for example, gold or silver) having a higher reflectance than the material of the metal substrate 12 is used as the material of the covering layer 34, the light is emitted from the light emitting element 20 to the side. It is possible to reflect light upward more efficiently.
- the coating layer 3 4 also has a function of preventing the inner wall of the concave portion 18 where the metal is exposed from being oxidized in the manufacturing process of the light emitting module 10.
- the oxide film 2 2 covering the surface of the metal substrate 1 2 is removed from the bottom surface 2 8 of the recess.
- the oxide film 2 2 has a higher thermal resistance than the metal composing the metal substrate 1 2. Therefore, by removing the oxide film 2 2 from the bottom surface of the recess 18 where the light emitting element 20 is mounted, the thermal resistance of the entire metal substrate 12 is reduced.
- a hook-like portion 1 1 that protrudes upward from the upper surface of the metal substrate 1 2 so as to surround the recess 18. It has been.
- the convex portion 11 is continuous with the side surface 30 of the concave portion 18, and its surface protrudes upward so as to draw a gentle curved surface.
- the height at which the convex portion 1 1 protrudes upward from the upper surface of the metal substrate 12 is, for example, not less than ⁇ ⁇ ⁇ ⁇ and not more than 50 ⁇ ⁇ .
- the convex part 11 may be provided continuously in an annular shape so as to surround the concave part 18, or may be provided discretely (discontinuously). 6130
- the sealing resin 3 2 is filled in the recesses 18 and the openings 4 8 to seal the light emitting element 20.
- the sealing resin 3 2 has a configuration in which a phosphor is mixed in a silicon resin having excellent heat resistance. For example, when blue light is emitted from the light emitting element 20 and a yellow phosphor is mixed into the sealing resin 3 2, the light transmitted through the sealing resin 3 2 becomes white. Therefore, the light emitting module 10 can be used as a lighting device that emits white light.
- the sealing resin 3 2 is also in contact with the convex portion 11 provided around the concave portion 18. Accordingly, the sealing resin 3 2 is firmly adhered to the convex portion 11 and the peeling of the sealing resin 3 2 from the metal substrate 12 is prevented.
- the convex portion 11 so as to surround the concave portion 18 as described above, the light generated from the light emitting element 20 may be irradiated on the upper surface of the metal substrate 12. Suppressed. Therefore, discoloration of the insulating layer 2 4 covering the upper surface of the metal substrate 1 2 is prevented. Furthermore, since such an effect can be obtained by the convex portion 1 1, a special base material for preventing discoloration and deterioration of the insulating layer 2 4 becomes unnecessary, and the cost can be reduced correspondingly.
- the convex portion 11 is not necessarily required, and the upper surface of the metal substrate 12 in the peripheral portion of the concave portion 18 may be flat without providing the convex portion 11.
- the bonding material 2 6 has a function of bonding the lower surface of the light emitting element 2 0 and the recess 1 8. Since the light emitting element 20 does not have an electrode on the lower surface, the bonding material 26 may be made of insulating resin, or may be made of metal such as solder for improving heat dissipation. good. In addition, the bottom surface of the recess 18 is covered with a metal film (covering layer 3 4) made of silver or the like with excellent solder wettability, so solder can be easily used as the bonding material 26. it can.
- the upper surface of the metal substrate 12 around the concave portion 18 is partially convex to form the convex portion 1 1, and the sealing resin 3 2 is adhered to the convex portion 1 1.
- the side surface 30 of the recess 18 is an inclined surface, the adhesion strength between the sealing resin 3 2 formed so as to be filled in the recess 18 and the metal substrate 12. Not so much Not strong. Therefore, in the present invention, the metal substrate 12 in the region surrounding the recess 1 8 is partially protruded upward to form the convex portion 1 1, and the sealing resin 3 2 is adhered to the convex portion 1 1. ing.
- the adhesion strength between the two increases. Furthermore, due to the occurrence of the anchor effect between the convex portion 11 and the sealing resin 3 2, the adhesion strength between the sealing resin 3 2 and the metal substrate 12 is increased. Therefore, it is possible to prevent the sealing resin 32 from being peeled off from the metal substrate 12 due to the temperature change under the usage conditions. Furthermore, in the present invention, by mounting the bare light emitting element 20 on the upper surface of the metal substrate 12, there is an advantage that the heat generated from the light emitting element 20 can be discharged to the outside very efficiently. .
- the light emitting element is mounted on the conductive pattern formed on the upper surface of the insulating layer, heat conduction is inhibited by the insulating layer, and the light emitting element 20 emits light. It was difficult to efficiently release the generated heat to the outside.
- the insulating layer 24 and the oxide film 22 are removed to form the opening 48, and the metal exposed from the opening 48 is formed.
- the light emitting element 2 0 is fixed to the surface of the substrate 1 2. As a result, the light emitting element
- the heat generated from 20 is immediately transmitted to the metal substrate 12 and released to the outside, so that the temperature rise of the light emitting element 20 is suppressed. Further, by suppressing the temperature rise, the deterioration of the sealing resin 32 is also suppressed.
- the side surface of the recess 18 provided on the upper surface of the metal substrate 12 can be used as a reflector.
- the side surface of recess 18 is an inclined surface that becomes wider as it approaches the upper surface of metal substrate 12. Therefore, the light emitted from the side surface of the light emitting element 20 to the side is reflected by the side surface 30 and irradiated upward. That is, the side surface 30 of the concave portion 18 that accommodates the light emitting element 20 also serves as a reflector. Therefore, since it is not necessary to prepare a separate reflector as in a general light emitting module, the number of parts can be reduced and the cost can be reduced. Further, as described above, the side surface 30 of the recess is covered with a material having a high reflectivity so that the side surface
- the function as a 30 reflector can also be enhanced.
- a substrate 40 as a material of light emitting module 10 is prepared, and a conductive pattern is formed.
- substrate 40 is made of a metal whose main material is, for example, copper or aluminum, and has a thickness of 0.5 mm or more and 2.0 mm or less.
- the planar size of the substrate 40 is, for example, about l m X l m, and a large number of light emitting modules are manufactured from a single substrate 40.
- the substrate 40 is a substrate made of aluminum, the upper surface and the lower surface of the substrate 40 are covered with the anodic oxide film described above.
- the upper surface of the substrate 40 is entirely covered with an insulating layer 4 2 having a thickness of about 50 ⁇ .
- the composition of the insulating layer 42 is the same as that of the insulating layer 24 described above, and is made of a resin material highly filled with a filler.
- the thickness of the upper surface of the insulating layer 42 is
- a conductive foil 44 made of copper of about 50 m is formed on the entire surface.
- the conductive foil 44 is then patterned by selective wet etching to form the conductive pattern 14.
- This conductive pattern 14 has the same shape for each unit 46 provided on the substrate 40.
- the unit 46 is a part constituting one light emitting module.
- FIG. 2 (C) shows a plan view of the substrate 40 after the completion of this process.
- the boundaries between Units 46 are indicated by dotted lines.
- the insulating layer is partially removed to provide opening 4 8.
- the insulating layer 4 2 is irradiated with laser from above.
- the laser to be irradiated is indicated by an arrow, and the laser is irradiated to the insulating layer 4 2 corresponding to the portion where the light emitting element is placed (here, the circular portion).
- the laser used here is a carbon dioxide laser or a YAG laser.
- the insulating layer 4 2 is partially removed into a circular shape by the laser irradiation described above to form the opening 48. ing.
- the laser irradiation is not limited to the insulating layer 42.
- the oxide film 2 2 covering the upper surface of 0 is also removed. Therefore, the bottom surface force of the open P portion 48 is exposed to the metal material (for example, aluminum) constituting the substrate 40.
- the opening 48 described above is circular and is provided corresponding to the region where the light emitting elements of each unit 46 are fixed. Where opening 4
- the planar size of 8 is formed to be larger than the concave portion 18 and the convex portion 11 (see FIG. 5) formed in the opening 48 in a later step. That is, the outer peripheral end portion of the opening portion 48 is spaced apart from the outer peripheral end portion of the concave portion 18 and the convex portion 11 1, thereby forming the concave portion 18 and the convex portion 11. It is possible to prevent the brittle insulating layer from being destroyed by the impact of the press performed to form it.
- a concave portion 18 and a convex portion 11 are formed from the upper surface of the substrate 40 exposed from the opening 48 8.
- the concave portion 18 and the convex portion 11 can be simultaneously formed by pressing.
- a press die first prepare a press die.
- the mold 50 is provided with a plurality of contact portions 5 1 projecting downward in a region corresponding to each opening 4 8 of the substrate 40.
- the upper surface of the substrate 40 exposed from the opening 48 is pressed at each abutting portion of the mold 50 so that the recess 18 And convex-shaped part 1 1 is formed.
- the contact portion 5 1 has a generally cylindrical shape, and a convex portion 5 2 and a recess portion 5 3 are formed on the lower surface thereof.
- the convex portion 52 has a shape corresponding to the concave portion 18 to be formed, and has a shape like a cone with the tip portion cut.
- the recess portion 5 3 has a shape corresponding to the projection-shaped portion 11 1 to be formed, and is a region where the periphery of the projection portion 5 2 on the lower surface of the contact portion 5 1 is recessed.
- the upper surface of the substrate 40 exposed from the opening 48 is pressed by the convex 52 provided at the lower end of the contact 51.
- a flange portion having a shape corresponding to the convex portion 52 is formed on the upper surface of the substrate 40.
- 4th (D) when the abutting portion 51 of the mold is further moved downward, it is pushed by the convex portion 52.
- the pressed metal material of the substrate 40 is pushed upward and wraps around only the contact portion 5 3.
- the metal material of the extruded part is the hollow part 5 of the contact part 5 1.
- Fig. 5 ( ⁇ ⁇ ) shows the shape of the recesses 18 formed.
- the recess 18 having a circular bottom surface 28 and an inclined surface 30 is formed. Further, a predetermined surface is formed on the upper surface of the substrate 40 around the recess 18.
- a convex portion 1 1 having a shape is formed.
- the depth of the recessed portion 18 to be formed may be such that the light emitting element to be mounted in a later process is completely accommodated, or may be such that the light emitting element is partially accommodated.
- the depth of the recess 1 8 is, for example, not less than 1 0 0 ⁇ m and not more than 3 0 0 ⁇ .
- the convex portion 11 has a smooth cross-sectional shape here, it can be changed to another shape by changing the shape of the recessed portion 53 of the contact portion 51 described above. You can also.
- the convex part 1 to improve the adhesion with the resin material, the convex part 1
- the concave portion 18 and the convex portion 11 are formed by the above-described method in the region where the light emitting element of each unit 46 is to be mounted.
- a separation groove is provided between the units 46.
- a first groove 54 is formed from the upper surface and a second groove 56 is formed from the lower surface between the units 46 of the substrate 40. ing. Both grooves have a V-shaped cross section.
- both the first groove 54 and the second groove 56 may be the same size (depth), or one of them may be formed larger than the other. Furthermore, if no problem occurs in the later process, only one of the first groove 54 and the second groove 56 may be provided.
- the first groove 54 and the second groove 56 are formed by cutting a V-shaped section saw at high speed along the boundary between the cuts 46 and cutting partially. Is formed. Furthermore, in this step, the substrate 40 is not individually separated by this cutting, but after forming the groove, the substrate 40 is in a single plate state.
- the substrate 40 exposed from the opening 48 is Cover the surface with a coating layer 3 4.
- the metal substrate 40 is used as an electrode and energized, whereby the coating layer 34, which is a coating film, is coated on the surface of the substrate 40 exposed from the opening 48. Put on.
- the coating layer 34 which is a coating film
- gold or silver is adopted as the material of the covering layer 3 4
- the surfaces of these parts may be covered with a resist. Further, since the back surface of the substrate 40 is covered with the oxide film 2 2 which is an insulator, the mech film is not attached.
- the recesses 18 are covered with the covering layer 3 4, thereby preventing, for example, oxidation of a metal surface made of aluminum. Furthermore, if the bottom surface 28 of the concave portion 18 is covered with the coating layer 3 4 so that the coating layer 3 4 is a material with excellent solder wettability, such as silver, in a later step, Light-emitting elements can be easily mounted using solder. Furthermore, the function as a reflector of the side surface 30 can be improved by covering the side surface 30 of the concave portion 18 with the coating layer 34 made of a material having high reflectivity. You can
- a light emitting element 20 C LED chip is mounted in the recess 18 of each unit 46 and electrically connected.
- the lower surface of the light emitting element 20 is mounted on the bottom surface 2 8 of the recess 1 8 via the bonding material 2 6. Since the light emitting element 20 does not have an electrode on the lower surface, both an insulating adhesive made of resin or a conductive adhesive can be used as the bonding material 2 6. As the conductive adhesive, both solder and conductive paste can be used.
- the bottom surface 28 of the concave portion 18 is covered with a coating layer 34 that is a coating film made of silver or the like having excellent solder wettability, it has better thermal conductivity than an insulating material. Solder can be used as the bonding material 26.
- each electrode provided on the upper surface of the light emitting element 20 and the conductive pattern 14 are connected via the thin metal wire 16.
- the light emitting element 20 is sealed by filling the recess 18 of each unit 46 provided on the substrate 40 with the sealing resin 3 2.
- Sealing resin 3 2 It is made of a silicone resin mixed with a phosphor, and is filled in the recess 18 and the opening 48 with a sealing resin 3 2 in a liquid or semi-solid state.
- the side surface and the upper surface of the light emitting element 20 and the connecting portion between the light emitting element 20 and the fine metal wire 16 are covered with the sealing resin 3 2.
- the side surface of the insulating layer 24 facing the opening 48 is a rough surface from which the filler highly filled in the insulating layer 24 is exposed. Therefore, the adhesion strength between the sealing resin 3 2 and the other member is also improved by contacting the sealing resin 32 with the filler exposed from the side surface of the rough insulating layer 24.
- the sealing resin 3 2 is entirely formed on the upper surface of the substrate 40 by individually supplying the sealing resin 32 to each recess 18 and sealing it. This prevents the phosphors contained in the sealing resin 3 2 from being separated. Therefore, the color emitted from the light emitting module is made uniform.
- substrate '4 0 is separated into each unit at the place where first groove 54 and second groove 56 are formed. '-' Since the two grooves are formed between the units 46, the substrate 40 can be easily separated. As the separation method, punching by pressing, dicing, bending of the substrate 40 at the location where both grooves are formed, and the like can be employed.
- the light emitting module having the configuration shown in FIG. 1 is manufactured through the above steps.
- the order of the steps described above can be changed.
- the step of forming the first groove 54 shown in FIG. 6 may be performed after the step of forming the sealing resin 3 2 shown in FIG.
- the first groove 54 may be formed to divide the substrate 40 into individual units 46.
- a light emitting module in which one or two or more light emitting elements 20 are accommodated in the recesses 18 can be formed.
- the light emitting element 20 is a blue or ultraviolet light emitting element, and the phosphor is contained in the sealing resin 32, whereby a light emitting module capable of obtaining white light emission can be obtained.
- the light emitting element 20 can be a red, green, and blue light emitting element, and the sealing resin 3 2 can be transparent or contain a diffusing agent.
- a light emitting module in which the inner peripheral surface of the recess 18 can be mirror-finished or plated.
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/674,564 US20110121335A1 (en) | 2007-08-31 | 2008-08-28 | Light emitting module and manufacturing method thereof |
CN2008801045021A CN101939851B (zh) | 2007-08-31 | 2008-08-28 | 发光组件以及其制造方法 |
KR1020107004363A KR101129117B1 (ko) | 2007-08-31 | 2008-08-28 | 발광 모듈 및 그 제조 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-225567 | 2007-08-31 | ||
JP2007225567A JP2009059870A (ja) | 2007-08-31 | 2007-08-31 | 発光モジュールおよびその製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009028738A1 true WO2009028738A1 (ja) | 2009-03-05 |
Family
ID=40387433
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/066130 WO2009028738A1 (ja) | 2007-08-31 | 2008-08-28 | 発光モジュールおよびその製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20110121335A1 (ja) |
JP (1) | JP2009059870A (ja) |
KR (1) | KR101129117B1 (ja) |
CN (1) | CN101939851B (ja) |
WO (1) | WO2009028738A1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011037185A1 (ja) * | 2009-09-24 | 2011-03-31 | 京セラ株式会社 | 実装用基板、発光体、および実装用基板の製造方法 |
CN102494259A (zh) * | 2011-12-01 | 2012-06-13 | 深圳市华星光电技术有限公司 | 液晶显示装置的led灯条及背光模组 |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201103170A (en) * | 2009-07-08 | 2011-01-16 | Paragon Sc Lighting Tech Co | LED package structure with concave area for positioning heat-conducting substance and method for manufacturing the same |
JP2011171436A (ja) * | 2010-02-17 | 2011-09-01 | Tdk Corp | 電子部品内蔵モジュール及び電子部品内蔵モジュールの製造方法 |
TWI462340B (zh) * | 2010-09-08 | 2014-11-21 | Epistar Corp | 一種發光結構及其製造方法 |
JP2012074478A (ja) * | 2010-09-28 | 2012-04-12 | Asahi Glass Co Ltd | 発光素子用基板および発光装置 |
JP5867417B2 (ja) * | 2011-02-10 | 2016-02-24 | 日亜化学工業株式会社 | 発光装置、発光装置の製造方法、及びパッケージアレイ |
KR101791175B1 (ko) * | 2011-06-30 | 2017-10-27 | 엘지이노텍 주식회사 | 발광소자 및 이를 포함하는 발광소자 패키지 |
CN202217702U (zh) * | 2011-07-01 | 2012-05-09 | 方与圆电子(深圳)有限公司 | 一种光源模组及照明装置 |
KR101233754B1 (ko) * | 2011-09-06 | 2013-02-27 | 장종진 | 메탈 pcb 및 그의 제조 방법 |
KR101250372B1 (ko) * | 2011-12-09 | 2013-04-05 | 엘지이노텍 주식회사 | 광소자 패키지 및 그 제조 방법 |
JP5952569B2 (ja) * | 2012-01-25 | 2016-07-13 | 日本カーバイド工業株式会社 | 発光素子搭載用基板、及び、それを用いた発光装置、及び、発光素子搭載用基板の製造方法 |
KR101415928B1 (ko) * | 2012-11-28 | 2014-07-04 | 주식회사 루멘스 | 발광장치 및 이를 구비하는 백라이트 유닛 |
WO2015083527A1 (ja) * | 2013-12-03 | 2015-06-11 | 日本カーバイド工業株式会社 | 発光素子搭載用基板、及び、それを用いた発光装置 |
JP6922918B2 (ja) * | 2016-08-22 | 2021-08-18 | 株式会社村田製作所 | セラミック基板及び電子部品内蔵モジュール |
DE102016119002B4 (de) * | 2016-10-06 | 2022-01-13 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelektronisches bauelement und verfahren zum herstellen eines optoelektronischen bauelements |
JP7177327B2 (ja) * | 2017-04-06 | 2022-11-24 | 日亜化学工業株式会社 | 発光装置 |
JP7284373B2 (ja) * | 2018-12-28 | 2023-05-31 | 日亜化学工業株式会社 | 発光装置 |
US11121076B2 (en) * | 2019-06-27 | 2021-09-14 | Texas Instruments Incorporated | Semiconductor die with conversion coating |
CN112467008A (zh) * | 2020-11-13 | 2021-03-09 | 中山市聚明星电子有限公司 | 发光装置制作方法及发光装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH031540U (ja) * | 1989-05-26 | 1991-01-09 | ||
JP2000022217A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 光半導体モジュール |
JP2003008073A (ja) * | 2001-06-26 | 2003-01-10 | Matsushita Electric Works Ltd | 発光素子 |
WO2003030274A1 (fr) * | 2001-09-27 | 2003-04-10 | Nichia Corporation | Dispositif emetteur de lumiere et procede de fabrication associe |
JP2006128719A (ja) * | 2002-09-05 | 2006-05-18 | Nichia Chem Ind Ltd | 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置 |
JP2007189216A (ja) * | 2005-12-16 | 2007-07-26 | Sumitomo Bakelite Co Ltd | 多層配線板の製造方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4045781B2 (ja) * | 2001-08-28 | 2008-02-13 | 松下電工株式会社 | 発光装置 |
JP4114437B2 (ja) * | 2002-08-27 | 2008-07-09 | 松下電工株式会社 | Ledチップ取付部材の製造方法及びそのledチップ取付部材を用いたled実装基板 |
TWI292961B (en) * | 2002-09-05 | 2008-01-21 | Nichia Corp | Semiconductor device and an optical device using the semiconductor device |
JP2006086138A (ja) * | 2003-06-05 | 2006-03-30 | Toyoda Gosei Co Ltd | 光デバイス |
KR101368748B1 (ko) * | 2004-06-04 | 2014-03-05 | 더 보오드 오브 트러스티스 오브 더 유니버시티 오브 일리노이즈 | 인쇄가능한 반도체소자들의 제조 및 조립방법과 장치 |
JP2006100753A (ja) * | 2004-09-30 | 2006-04-13 | Sanyo Electric Co Ltd | 半導体モジュールおよびその製造方法 |
JP2006278829A (ja) * | 2005-03-30 | 2006-10-12 | Taiwan Oasis Technology Co Ltd | Ledチップキャリアの構造及び製造方法 |
JP2007165601A (ja) * | 2005-12-14 | 2007-06-28 | Toshiba Lighting & Technology Corp | 発光ダイオード装置及び発光ダイオード装置の製造方法 |
JP2007279480A (ja) * | 2006-04-10 | 2007-10-25 | Hitachi Displays Ltd | 液晶表示装置 |
US20080029775A1 (en) * | 2006-08-02 | 2008-02-07 | Lustrous Technology Ltd. | Light emitting diode package with positioning groove |
-
2007
- 2007-08-31 JP JP2007225567A patent/JP2009059870A/ja active Pending
-
2008
- 2008-08-28 CN CN2008801045021A patent/CN101939851B/zh not_active Expired - Fee Related
- 2008-08-28 WO PCT/JP2008/066130 patent/WO2009028738A1/ja active Application Filing
- 2008-08-28 US US12/674,564 patent/US20110121335A1/en not_active Abandoned
- 2008-08-28 KR KR1020107004363A patent/KR101129117B1/ko not_active IP Right Cessation
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH031540U (ja) * | 1989-05-26 | 1991-01-09 | ||
JP2000022217A (ja) * | 1998-06-30 | 2000-01-21 | Toshiba Corp | 光半導体モジュール |
JP2003008073A (ja) * | 2001-06-26 | 2003-01-10 | Matsushita Electric Works Ltd | 発光素子 |
WO2003030274A1 (fr) * | 2001-09-27 | 2003-04-10 | Nichia Corporation | Dispositif emetteur de lumiere et procede de fabrication associe |
JP2006128719A (ja) * | 2002-09-05 | 2006-05-18 | Nichia Chem Ind Ltd | 半導体装置およびその製造方法、並びにその半導体装置を用いた光学装置 |
JP2007189216A (ja) * | 2005-12-16 | 2007-07-26 | Sumitomo Bakelite Co Ltd | 多層配線板の製造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2011037185A1 (ja) * | 2009-09-24 | 2011-03-31 | 京セラ株式会社 | 実装用基板、発光体、および実装用基板の製造方法 |
CN102494259A (zh) * | 2011-12-01 | 2012-06-13 | 深圳市华星光电技术有限公司 | 液晶显示装置的led灯条及背光模组 |
Also Published As
Publication number | Publication date |
---|---|
CN101939851B (zh) | 2012-04-18 |
KR101129117B1 (ko) | 2012-03-23 |
US20110121335A1 (en) | 2011-05-26 |
KR20100039420A (ko) | 2010-04-15 |
JP2009059870A (ja) | 2009-03-19 |
CN101939851A (zh) | 2011-01-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2009028738A1 (ja) | 発光モジュールおよびその製造方法 | |
TWI407585B (zh) | 發光模組及其製造方法 | |
JP5279225B2 (ja) | 発光モジュールおよびその製造方法 | |
EP1439584A1 (en) | Light emitting device using led | |
JP2006245032A (ja) | 発光装置およびledランプ | |
JP3991624B2 (ja) | 表面実装型発光装置及びその製造方法 | |
JP2009081195A (ja) | 発光モジュール | |
JP2009283653A (ja) | 発光装置およびその製造方法 | |
JP2010251805A (ja) | 照明装置 | |
KR20090072941A (ko) | 고출력 led 패키지 및 그 제조방법 | |
JP2005210042A (ja) | 発光装置および照明装置 | |
JP5401025B2 (ja) | 発光モジュールおよびその製造方法 | |
JP6107229B2 (ja) | 発光装置 | |
JP5039474B2 (ja) | 発光モジュールおよびその製造方法 | |
JP2009231397A (ja) | 照明装置 | |
JP4091926B2 (ja) | 発光装置および照明装置 | |
JP2010073724A (ja) | 発光モジュール | |
JP4659386B2 (ja) | 発光素子収納用パッケージおよび発光装置ならびに照明装置 | |
JP2005210043A (ja) | 発光素子収納用パッケージおよび発光装置ならびに照明装置 | |
JP4583071B2 (ja) | 発光素子収納用パッケージおよび発光装置ならびに照明装置 | |
JP4160935B2 (ja) | 発光素子収納用パッケージ、発光装置および照明装置 | |
JP2016119464A (ja) | 発光装置 | |
KR101822167B1 (ko) | 발광 다이오드 패키지 및 그의 제조 방법 | |
JP2010056386A (ja) | 発光モジュール | |
JP2008305811A (ja) | Ledチップ固定用基板およびその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 200880104502.1 Country of ref document: CN |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08828500 Country of ref document: EP Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 12674564 Country of ref document: US |
|
ENP | Entry into the national phase |
Ref document number: 20107004363 Country of ref document: KR Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08828500 Country of ref document: EP Kind code of ref document: A1 |