WO2009020073A1 - 薄膜光電変換モジュールの製造方法および製造装置 - Google Patents

薄膜光電変換モジュールの製造方法および製造装置 Download PDF

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Publication number
WO2009020073A1
WO2009020073A1 PCT/JP2008/063889 JP2008063889W WO2009020073A1 WO 2009020073 A1 WO2009020073 A1 WO 2009020073A1 JP 2008063889 W JP2008063889 W JP 2008063889W WO 2009020073 A1 WO2009020073 A1 WO 2009020073A1
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WO
WIPO (PCT)
Prior art keywords
photoelectric conversion
thin film
film photoelectric
electrode layer
conversion module
Prior art date
Application number
PCT/JP2008/063889
Other languages
English (en)
French (fr)
Inventor
Shinsuke Tachibana
Takanori Nakano
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to US12/672,128 priority Critical patent/US8349623B2/en
Priority to JP2009526435A priority patent/JPWO2009020073A1/ja
Priority to EP08792102A priority patent/EP2184789A4/en
Publication of WO2009020073A1 publication Critical patent/WO2009020073A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/208—Particular post-treatment of the devices, e.g. annealing, short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
    • H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

　絶縁基板の表面上に第１電極層、光電変換層および第２電極層が順次積層されてなる薄膜光電変換素子が互いに電気的に直列接続されたストリングを、前記第１電極層と前記第２電極層を電気的に絶縁分離する直列接続方向に延びる分割溝によって複数に分割して、複数の分割ストリングを形成する工程（Ａ）と、前記分割ストリングにおける各薄膜光電変換素子に逆バイアス電圧を印加して逆バイアス処理する工程（Ｂ）とを備えたことを特徴とする薄膜光電変換モジュールの製造方法。
PCT/JP2008/063889 2007-08-06 2008-08-01 薄膜光電変換モジュールの製造方法および製造装置 WO2009020073A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/672,128 US8349623B2 (en) 2007-08-06 2008-08-01 Method and apparatus for manufacturing thin film photoelectric conversion module
JP2009526435A JPWO2009020073A1 (ja) 2007-08-06 2008-08-01 薄膜光電変換モジュールの製造方法および製造装置
EP08792102A EP2184789A4 (en) 2007-08-06 2008-08-01 METHOD AND DEVICE FOR PRODUCING A PHOTOELECTRIC THIN FILM WALLER MODULE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007204426 2007-08-06
JP2007-204426 2007-08-06

Publications (1)

Publication Number Publication Date
WO2009020073A1 true WO2009020073A1 (ja) 2009-02-12

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Application Number Title Priority Date Filing Date
PCT/JP2008/063889 WO2009020073A1 (ja) 2007-08-06 2008-08-01 薄膜光電変換モジュールの製造方法および製造装置

Country Status (4)

Country Link
US (1) US8349623B2 (ja)
EP (1) EP2184789A4 (ja)
JP (2) JPWO2009020073A1 (ja)
WO (1) WO2009020073A1 (ja)

Cited By (10)

* Cited by examiner, † Cited by third party
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WO2011052426A1 (ja) * 2009-10-26 2011-05-05 株式会社アルバック 太陽電池の評価装置及び評価方法
WO2011104881A1 (ja) * 2010-02-26 2011-09-01 株式会社エヌエフ回路設計ブロック 太陽電池の改修方法、太陽電池の製造方法、この製造方法により製造された太陽電池、太陽電池の改修装置、太陽電池の製造装置及び検査装置、これらの装置を製造工程に用いた太陽電池
CN102237376A (zh) * 2010-05-04 2011-11-09 绿阳光电股份有限公司 穿透式太阳能电池模块及制造穿透式太阳能电池模块方法
CN102237375A (zh) * 2010-05-04 2011-11-09 绿阳光电股份有限公司 穿透式太阳能电池模块及制造穿透式太阳能电池模块方法
JP2012074619A (ja) * 2010-09-29 2012-04-12 Showa Shell Sekiyu Kk 化合物系薄膜太陽電池モジュール及びその製造方法
WO2012108257A1 (ja) * 2011-02-07 2012-08-16 シャープ株式会社 逆バイアス処理装置およびそれを用いた逆バイアス処理方法
WO2012108256A1 (ja) * 2011-02-07 2012-08-16 シャープ株式会社 逆バイアス処理装置およびそれを用いた逆バイアス処理方法
JP5165799B2 (ja) * 2009-12-22 2013-03-21 株式会社アルバック 太陽電池の評価方法及び評価装置
WO2013179898A1 (ja) * 2012-05-29 2013-12-05 三菱電機株式会社 太陽電池モジュールとその製造方法および太陽電池モジュール製造管理装置
JP2014112711A (ja) * 2009-03-31 2014-06-19 Lg Innotek Co Ltd 太陽電池及びその製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5062684B2 (ja) * 2008-02-13 2012-10-31 シャープ株式会社 薄膜光電変換モジュールの製造方法および製造装置
TWI451580B (zh) * 2011-09-26 2014-09-01 Ind Tech Res Inst 薄膜太陽能電池之製法
CN107112317B (zh) * 2014-12-24 2019-07-05 日本精工株式会社 功率半导体模块以及使用其的电动助力转向装置
TWI720181B (zh) * 2016-05-30 2021-03-01 日商新力股份有限公司 薄膜製造方法、薄膜製造裝置、光電轉換元件之製造方法、邏輯電路之製造方法、發光元件之製造方法及調光元件之製造方法
CN106684209B (zh) * 2016-12-27 2018-03-27 成都中建材光电材料有限公司 一种新型碲化镉薄膜太阳能电池组件的制备方法
CN106767379A (zh) * 2016-12-30 2017-05-31 常州亿晶光电科技有限公司 一种太阳能电池板网板变形的检测设备

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US4481230A (en) * 1983-10-27 1984-11-06 Rca Corporation Method of depositing a semiconductor layer from a glow discharge
JPS62176174A (ja) * 1986-01-29 1987-08-01 Semiconductor Energy Lab Co Ltd 光電変換装置作成方法
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WO2008041454A1 (fr) * 2006-10-03 2008-04-10 Sharp Kabushiki Kaisha Appareil de traitement de polarisation inverse pour un dispositif de conversion photoélectrique et procédé pour un traitement de polarisation inverse

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Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9893221B2 (en) 2009-03-31 2018-02-13 Lg Innotek Co., Ltd. Solar cell and method of fabricating the same
US9741884B2 (en) 2009-03-31 2017-08-22 Lg Innotek Co., Ltd. Solar cell and method of fabricating the same
JP2014112711A (ja) * 2009-03-31 2014-06-19 Lg Innotek Co Ltd 太陽電池及びその製造方法
WO2011052426A1 (ja) * 2009-10-26 2011-05-05 株式会社アルバック 太陽電池の評価装置及び評価方法
JPWO2011052426A1 (ja) * 2009-10-26 2013-03-21 株式会社アルバック 太陽電池の評価装置及び評価方法
JP5165799B2 (ja) * 2009-12-22 2013-03-21 株式会社アルバック 太陽電池の評価方法及び評価装置
JPWO2011104881A1 (ja) * 2010-02-26 2013-06-17 株式会社エヌエフ回路設計ブロック 太陽電池の改修方法、太陽電池の製造方法、この製造方法により製造された太陽電池、太陽電池の改修装置、太陽電池の製造装置及び検査装置、これらの装置を製造工程に用いた太陽電池
WO2011104881A1 (ja) * 2010-02-26 2011-09-01 株式会社エヌエフ回路設計ブロック 太陽電池の改修方法、太陽電池の製造方法、この製造方法により製造された太陽電池、太陽電池の改修装置、太陽電池の製造装置及び検査装置、これらの装置を製造工程に用いた太陽電池
CN102237376A (zh) * 2010-05-04 2011-11-09 绿阳光电股份有限公司 穿透式太阳能电池模块及制造穿透式太阳能电池模块方法
CN102237375A (zh) * 2010-05-04 2011-11-09 绿阳光电股份有限公司 穿透式太阳能电池模块及制造穿透式太阳能电池模块方法
CN102237376B (zh) * 2010-05-04 2013-08-21 绿阳光电股份有限公司 穿透式太阳能电池模块及制造穿透式太阳能电池模块方法
JP2012074619A (ja) * 2010-09-29 2012-04-12 Showa Shell Sekiyu Kk 化合物系薄膜太陽電池モジュール及びその製造方法
JP2012164818A (ja) * 2011-02-07 2012-08-30 Sharp Corp 逆バイアス処理装置およびそれを用いた逆バイアス処理方法
JP2012164819A (ja) * 2011-02-07 2012-08-30 Sharp Corp 逆バイアス処理装置およびそれを用いた逆バイアス処理方法
WO2012108256A1 (ja) * 2011-02-07 2012-08-16 シャープ株式会社 逆バイアス処理装置およびそれを用いた逆バイアス処理方法
WO2012108257A1 (ja) * 2011-02-07 2012-08-16 シャープ株式会社 逆バイアス処理装置およびそれを用いた逆バイアス処理方法
WO2013179898A1 (ja) * 2012-05-29 2013-12-05 三菱電機株式会社 太陽電池モジュールとその製造方法および太陽電池モジュール製造管理装置
JPWO2013179898A1 (ja) * 2012-05-29 2016-01-18 三菱電機株式会社 太陽電池モジュールとその製造方法および太陽電池モジュール製造管理装置

Also Published As

Publication number Publication date
US8349623B2 (en) 2013-01-08
US20110250709A1 (en) 2011-10-13
EP2184789A4 (en) 2011-07-27
EP2184789A1 (en) 2010-05-12
JP2012138637A (ja) 2012-07-19
JPWO2009020073A1 (ja) 2010-11-04
JP5409837B2 (ja) 2014-02-05

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