WO2009011363A1 - エッチング液組成物 - Google Patents

エッチング液組成物 Download PDF

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Publication number
WO2009011363A1
WO2009011363A1 PCT/JP2008/062837 JP2008062837W WO2009011363A1 WO 2009011363 A1 WO2009011363 A1 WO 2009011363A1 JP 2008062837 W JP2008062837 W JP 2008062837W WO 2009011363 A1 WO2009011363 A1 WO 2009011363A1
Authority
WO
WIPO (PCT)
Prior art keywords
acid
salt
metal film
solution composition
etching solution
Prior art date
Application number
PCT/JP2008/062837
Other languages
English (en)
French (fr)
Inventor
Tsuguhiro Tago
Tomotake Matsuda
Mayumi Kimura
Tetsuo Aoyama
Original Assignee
Hayashi Pure Chemical Ind, Ltd.
Sanyo Electric Co., Ltd.
Sanyo Semiconductor Manufacturing Co., Ltd.
Sanyo Semiconductor Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hayashi Pure Chemical Ind, Ltd., Sanyo Electric Co., Ltd., Sanyo Semiconductor Manufacturing Co., Ltd., Sanyo Semiconductor Co., Ltd. filed Critical Hayashi Pure Chemical Ind, Ltd.
Priority to US12/438,143 priority Critical patent/US8545716B2/en
Priority to CN200880000680XA priority patent/CN101542692B/zh
Priority to KR1020097003100A priority patent/KR101226803B1/ko
Publication of WO2009011363A1 publication Critical patent/WO2009011363A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/20—Acidic compositions for etching aluminium or alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Power Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)

Abstract

　アルミニウム膜やアルミニウム合金膜などの金属膜を制御性よく、かつ、レジスト滲みの発生を抑制、防止しつつエッチングし、意図するテーパー形状と、優れた平坦性を有する金属膜を得ることができるようにする。 　リン酸、硝酸、有機酸塩を含有する水溶液を、基板上の金属膜をエッチングするためのエッチング液組成物として用いる。 　前記有機酸塩として、脂肪族モノカルボン酸、脂肪族ポリカルボン酸、脂肪族オキシカルボン酸、芳香族モノカルボン酸、芳香族ポリカルボン酸、芳香族オキシカルボン酸からなる群より選ばれる少なくとも１種の、アンモニウム塩、アミン塩、第四級アンモニウム塩、アルカリ金属塩からなる群より選ばれる少なくとも１種を用いる。 　また、前記有機酸塩の濃度を、０．１～２０重量％の範囲とする。 　また、本発明のエッチング液組成物を、前記金属膜がアルミニウムまたはアルミニウム合金である場合に用いる。
PCT/JP2008/062837 2007-07-19 2008-07-16 エッチング液組成物 WO2009011363A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US12/438,143 US8545716B2 (en) 2007-07-19 2008-07-16 Etching liquid composition
CN200880000680XA CN101542692B (zh) 2007-07-19 2008-07-16 蚀刻液组合物
KR1020097003100A KR101226803B1 (ko) 2007-07-19 2008-07-16 에칭액 조성물

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007188043A JP5363713B2 (ja) 2007-07-19 2007-07-19 エッチング液組成物
JP2007-188043 2007-07-19

Publications (1)

Publication Number Publication Date
WO2009011363A1 true WO2009011363A1 (ja) 2009-01-22

Family

ID=40259695

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062837 WO2009011363A1 (ja) 2007-07-19 2008-07-16 エッチング液組成物

Country Status (6)

Country Link
US (1) US8545716B2 (ja)
JP (1) JP5363713B2 (ja)
KR (2) KR20120023174A (ja)
CN (1) CN101542692B (ja)
TW (1) TWI447268B (ja)
WO (1) WO2009011363A1 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102304714A (zh) * 2011-08-19 2012-01-04 绵阳艾萨斯电子材料有限公司 液晶显示屏含铝膜的蚀刻液
KR101493768B1 (ko) * 2014-09-04 2015-02-17 (주)일광폴리머 알루미늄-수지 복합체의 제조 방법
CN107591416B (zh) * 2017-08-29 2020-04-14 惠科股份有限公司 一种阵列基板的制造方法和阵列基板

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002075959A (ja) * 2000-09-05 2002-03-15 Sharp Corp 半導体基板の洗浄処理及びウェットエッチング処理を同時に行う方法
JP2004003005A (ja) * 2002-04-24 2004-01-08 Mitsubishi Chemicals Corp エッチング液及びエッチング方法
JP2005085811A (ja) * 2003-09-04 2005-03-31 Advanced Display Inc エッチング液及びエッチング方法
JP2006135282A (ja) * 2004-11-03 2006-05-25 Samsung Electronics Co Ltd 導電体用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法
JP2006344939A (ja) * 2005-06-09 2006-12-21 Samsung Electronics Co Ltd エッチング液、エッチング液及びその結果構造物を用いた導電性配線を含む薄膜トランジスタ基板の製造方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2582020A (en) * 1947-07-15 1952-01-08 Gen Motors Corp Electrolytic polishing
US4872919A (en) * 1988-01-28 1989-10-10 The Procter & Gamble Company Method for removing precipitated calcium citrate from juice pasteurization or sterilization equipment
US4895617A (en) * 1989-05-04 1990-01-23 Olin Corporation Etchant solution for photoresist-patterned metal layers
JPH06122982A (ja) 1992-10-13 1994-05-06 Matsushita Electric Ind Co Ltd アルミニウムを主成分とする金属薄膜のエッチング液組成物
JP2614403B2 (ja) * 1993-08-06 1997-05-28 インターナショナル・ビジネス・マシーンズ・コーポレイション テーパエッチング方法
JPH07176525A (ja) 1993-12-21 1995-07-14 Casio Comput Co Ltd 低抵抗配線の形成方法
JP2001077098A (ja) 1999-09-03 2001-03-23 Toshiba Corp エッチング液、及びこれを用いる薄膜パターンの製造方法
JP2003049285A (ja) 2001-08-08 2003-02-21 Mitsubishi Chemicals Corp エッチング方法およびエッチング液の定量分析方法ならびにエッチング液からリン酸を回収する方法
JP4596109B2 (ja) 2001-06-26 2010-12-08 三菱瓦斯化学株式会社 エッチング液組成物
TWI245071B (en) * 2002-04-24 2005-12-11 Mitsubishi Chem Corp Etchant and method of etching
US7078276B1 (en) * 2003-01-08 2006-07-18 Kovio, Inc. Nanoparticles and method for making the same
TW200510570A (en) * 2003-08-22 2005-03-16 Arch Spec Chem Inc Novel aqueous based metal etchant
KR100465342B1 (ko) * 2003-08-22 2005-01-13 테크노세미켐 주식회사 평판디스플레이 금속전극용 식각액 조성물
JP4428995B2 (ja) 2003-12-03 2010-03-10 関東化学株式会社 金属膜のエッチング液組成物
US7390744B2 (en) * 2004-01-29 2008-06-24 Applied Materials, Inc. Method and composition for polishing a substrate

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002075959A (ja) * 2000-09-05 2002-03-15 Sharp Corp 半導体基板の洗浄処理及びウェットエッチング処理を同時に行う方法
JP2004003005A (ja) * 2002-04-24 2004-01-08 Mitsubishi Chemicals Corp エッチング液及びエッチング方法
JP2005085811A (ja) * 2003-09-04 2005-03-31 Advanced Display Inc エッチング液及びエッチング方法
JP2006135282A (ja) * 2004-11-03 2006-05-25 Samsung Electronics Co Ltd 導電体用エッチング液及びこれを利用した薄膜トランジスタ表示板の製造方法
JP2006344939A (ja) * 2005-06-09 2006-12-21 Samsung Electronics Co Ltd エッチング液、エッチング液及びその結果構造物を用いた導電性配線を含む薄膜トランジスタ基板の製造方法

Also Published As

Publication number Publication date
TW200909610A (en) 2009-03-01
JP5363713B2 (ja) 2013-12-11
CN101542692A (zh) 2009-09-23
KR20120023174A (ko) 2012-03-12
KR101226803B1 (ko) 2013-01-25
JP2009026925A (ja) 2009-02-05
TWI447268B (zh) 2014-08-01
US20100230631A1 (en) 2010-09-16
KR20090075794A (ko) 2009-07-09
US8545716B2 (en) 2013-10-01
CN101542692B (zh) 2011-04-13

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