WO2008143191A1 - Ｍｅｍｓセンサおよびその製造方法 - Google Patents

Ｍｅｍｓセンサおよびその製造方法 Download PDF

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Publication number
WO2008143191A1
WO2008143191A1 PCT/JP2008/059078 JP2008059078W WO2008143191A1 WO 2008143191 A1 WO2008143191 A1 WO 2008143191A1 JP 2008059078 W JP2008059078 W JP 2008059078W WO 2008143191 A1 WO2008143191 A1 WO 2008143191A1
Authority
WO
WIPO (PCT)
Prior art keywords
manufacturing
same
mems sensor
base layer
deformation part
Prior art date
Application number
PCT/JP2008/059078
Other languages
English (en)
French (fr)
Inventor
Goro Nakatani
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to US12/451,497 priority Critical patent/US20100116057A1/en
Priority to JP2009515218A priority patent/JPWO2008143191A1/ja
Publication of WO2008143191A1 publication Critical patent/WO2008143191A1/ja

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
    • B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
    • B81C1/00468—Releasing structures
    • B81C1/00476—Releasing structures removing a sacrificial layer
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/12—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance
    • G01P15/123—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by alteration of electrical resistance by piezo-resistive elements, e.g. semiconductor strain gauges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0228—Inertial sensors
    • B81B2201/0235—Accelerometers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0118—Cantilevers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
    • G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
    • G01P2015/084—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass
    • G01P2015/0842—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass the mass being suspended at more than one of its sides, e.g. membrane-type suspension, so as to permit multi-axis movement of the mass the mass being of clover leaf shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49156—Manufacturing circuit on or in base with selective destruction of conductive paths

Abstract

　本発明のＭＥＭＳ（Micro Electro Mechanical Systems）センサは、基層と、前記基層上に前記基層と間隔を空けて設けられ、外力により変形する変形部とを備える。前記変形部は、有機材料からなる。
PCT/JP2008/059078 2007-05-17 2008-05-16 Ｍｅｍｓセンサおよびその製造方法 WO2008143191A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/451,497 US20100116057A1 (en) 2007-05-17 2008-05-16 Mems sensor and method of manufacturing the same
JP2009515218A JPWO2008143191A1 (ja) 2007-05-17 2008-05-16 Ｍｅｍｓセンサおよびその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007131831 2007-05-17
JP2007-131831 2007-05-17

Publications (1)

Publication Number Publication Date
WO2008143191A1 true WO2008143191A1 (ja) 2008-11-27

Family

ID=40031892

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/059078 WO2008143191A1 (ja) 2007-05-17 2008-05-16 Ｍｅｍｓセンサおよびその製造方法

Country Status (3)

Country Link
US (1) US20100116057A1 (ja)
JP (1) JPWO2008143191A1 (ja)
WO (1) WO2008143191A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101825902B1 (ko) * 2010-03-18 2018-02-06 로베르트 보쉬 게엠베하 피에조 저항성 마이크로메커니컬 센서 소자 및 측정 방법

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102275860B (zh) * 2010-06-11 2014-12-31 张家港丽恒光微电子科技有限公司 惯性微机电传感器的制造方法
JPWO2011161917A1 (ja) * 2010-06-25 2013-08-19 パナソニック株式会社 加速度センサ
DE102011119349A1 (de) * 2011-11-25 2013-05-29 Bizerba Gmbh & Co. Kg Verfahren zur Herstellung eines Dünnschichtsensorelements
KR101614330B1 (ko) * 2013-08-06 2016-04-21 고어텍 인크 내충격기능을 구비한 실리콘 기반의 mems 마이크로폰，이러한 mems 마이크로폰을 포함하는 시스템 및 패키지
US11186481B2 (en) * 2017-11-30 2021-11-30 Taiwan Semiconductor Manufacturing Company, Ltd. Sensor device and manufacturing method thereof

Citations (3)

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JPH0798328A (ja) * 1993-09-28 1995-04-11 Mazda Motor Corp 半導体センサ
JPH07167885A (ja) * 1993-12-13 1995-07-04 Omron Corp 半導体加速度センサ及びその製造方法、ならびに当該半導体加速度センサによる加速度検出方式
JPH0843434A (ja) * 1994-07-28 1996-02-16 Matsushita Electric Ind Co Ltd 力学量センサおよびその製造方法

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JPH0798328A (ja) * 1993-09-28 1995-04-11 Mazda Motor Corp 半導体センサ
JPH07167885A (ja) * 1993-12-13 1995-07-04 Omron Corp 半導体加速度センサ及びその製造方法、ならびに当該半導体加速度センサによる加速度検出方式
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101825902B1 (ko) * 2010-03-18 2018-02-06 로베르트 보쉬 게엠베하 피에조 저항성 마이크로메커니컬 센서 소자 및 측정 방법

Also Published As

Publication number Publication date
US20100116057A1 (en) 2010-05-13
JPWO2008143191A1 (ja) 2010-08-05

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