WO2008126532A1 - エピタキシャル成長用基板および窒化物系化合物半導体単結晶の製造方法 - Google Patents

エピタキシャル成長用基板および窒化物系化合物半導体単結晶の製造方法 Download PDF

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Publication number
WO2008126532A1
WO2008126532A1 PCT/JP2008/054134 JP2008054134W WO2008126532A1 WO 2008126532 A1 WO2008126532 A1 WO 2008126532A1 JP 2008054134 W JP2008054134 W JP 2008054134W WO 2008126532 A1 WO2008126532 A1 WO 2008126532A1
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WIPO (PCT)
Prior art keywords
substrate
single crystal
epitaxial growth
compound semiconductor
nitride compound
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PCT/JP2008/054134
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English (en)
French (fr)
Inventor
Misao Takakusaki
Satoru Morioka
Takayuki Shimizu
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Nippon Mining & Metals Co., Ltd.
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Publication date
Application filed by Nippon Mining & Metals Co., Ltd. filed Critical Nippon Mining & Metals Co., Ltd.
Priority to JP2009508981A priority Critical patent/JPWO2008126532A1/ja
Priority to EP08721552A priority patent/EP2133450A4/en
Priority to US12/530,914 priority patent/US20100101486A1/en
Publication of WO2008126532A1 publication Critical patent/WO2008126532A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/24—Complex oxides with formula AMeO3, wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. ortho ferrites
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C30B33/02—Heat treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02656—Special treatments
    • H01L21/02658—Pretreatments
    • H01L21/02661—In-situ cleaning

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Thermal Sciences (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　エピタキシャル成長に用いられるＮｄＧａＯ３基板の特性を安定させ、再現性よく良質な窒化物系化合物半導体単結晶を成長させることができる技術を提供する。 　結晶引き上げ法により育成されたＮｄＧａＯ３単結晶に対して、大気中において、１４００°C以上１５００°C以下で所定時間（例えば、１０時間）のアニール処理を施し、このアニール処理を施したＮｄＧａＯ３基板をエピタキシャル成長用基板に用いるようにした。
PCT/JP2008/054134 2007-03-14 2008-03-07 エピタキシャル成長用基板および窒化物系化合物半導体単結晶の製造方法 WO2008126532A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009508981A JPWO2008126532A1 (ja) 2007-03-14 2008-03-07 エピタキシャル成長用基板および窒化物系化合物半導体単結晶の製造方法
EP08721552A EP2133450A4 (en) 2007-03-14 2008-03-07 EPITAXIAL GROWTH SUBSTRATE AND METHOD FOR MANUFACTURING A NITRIDE COMPOUND SEMICONDUCTOR MONOCRYSTAL
US12/530,914 US20100101486A1 (en) 2007-03-14 2008-03-07 Substrate for epitaxial growth and method for producing nitride compound semiconductor single crystal

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007065079 2007-03-14
JP2007-065079 2007-03-14

Publications (1)

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WO2008126532A1 true WO2008126532A1 (ja) 2008-10-23

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PCT/JP2008/054134 WO2008126532A1 (ja) 2007-03-14 2008-03-07 エピタキシャル成長用基板および窒化物系化合物半導体単結晶の製造方法

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US (1) US20100101486A1 (ja)
EP (1) EP2133450A4 (ja)
JP (1) JPWO2008126532A1 (ja)
WO (1) WO2008126532A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011093481A1 (ja) * 2010-02-01 2011-08-04 Jx日鉱日石金属株式会社 窒化物系化合物半導体基板の製造方法及び窒化物系化合物半導体自立基板

Citations (10)

* Cited by examiner, † Cited by third party
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JPH06183894A (ja) * 1992-05-25 1994-07-05 Nippon Telegr & Teleph Corp <Ntt> 酸化物単結晶の表面形成方法
JPH08186329A (ja) 1994-12-28 1996-07-16 Japan Energy Corp 窒化ガリウム系半導体結晶の成長方法
JPH08186078A (ja) 1994-12-28 1996-07-16 Japan Energy Corp 窒化ガリウム系半導体結晶の成長方法
JPH08183699A (ja) * 1994-12-27 1996-07-16 Fuji Photo Film Co Ltd 光学結晶の処理方法
JPH08208385A (ja) 1995-01-27 1996-08-13 Japan Energy Corp 窒化ガリウム系半導体結晶の成長方法
JPH0971496A (ja) 1995-09-07 1997-03-18 Japan Energy Corp 窒化ガリウム単結晶厚膜の製造方法
JP3293035B2 (ja) 1994-04-08 2002-06-17 株式会社ジャパンエナジー 窒化ガリウム系化合物半導体結晶の成長方法及び窒化ガリウム系化合物半導体装置
JP2004087814A (ja) * 2002-08-27 2004-03-18 Japan Science & Technology Corp 酸化物基板上への集積回路装置の製造方法及び装置
JP2005281113A (ja) * 2004-03-31 2005-10-13 Institute Of Physical & Chemical Research ニオブ酸リチウム基板およびその製造方法ならびにニオブ酸リチウム基板の表面処理方法
JP2006016254A (ja) * 2004-07-01 2006-01-19 Tdk Corp 単結晶の熱処理方法及びそれを用いた単結晶の製造方法

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JP2828118B2 (ja) * 1990-08-14 1998-11-25 株式会社ジャパンエナジー 単結晶の製造方法および単結晶引上げ装置
JP4150527B2 (ja) * 2002-02-27 2008-09-17 日鉱金属株式会社 結晶の製造方法
JP4233894B2 (ja) * 2003-03-12 2009-03-04 日鉱金属株式会社 半導体単結晶の製造方法

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06183894A (ja) * 1992-05-25 1994-07-05 Nippon Telegr & Teleph Corp <Ntt> 酸化物単結晶の表面形成方法
JP3293035B2 (ja) 1994-04-08 2002-06-17 株式会社ジャパンエナジー 窒化ガリウム系化合物半導体結晶の成長方法及び窒化ガリウム系化合物半導体装置
JPH08183699A (ja) * 1994-12-27 1996-07-16 Fuji Photo Film Co Ltd 光学結晶の処理方法
JP3263891B2 (ja) 1994-12-28 2002-03-11 株式会社ジャパンエナジー 窒化ガリウム系半導体結晶の成長方法
JPH08186078A (ja) 1994-12-28 1996-07-16 Japan Energy Corp 窒化ガリウム系半導体結晶の成長方法
JPH08186329A (ja) 1994-12-28 1996-07-16 Japan Energy Corp 窒化ガリウム系半導体結晶の成長方法
JPH08208385A (ja) 1995-01-27 1996-08-13 Japan Energy Corp 窒化ガリウム系半導体結晶の成長方法
JP3564645B2 (ja) 1995-01-27 2004-09-15 株式会社日鉱マテリアルズ 窒化ガリウム系半導体結晶の成長方法
JPH0971496A (ja) 1995-09-07 1997-03-18 Japan Energy Corp 窒化ガリウム単結晶厚膜の製造方法
JP3692452B2 (ja) 1995-09-07 2005-09-07 株式会社日鉱マテリアルズ 窒化ガリウム単結晶厚膜の製造方法
JP2004087814A (ja) * 2002-08-27 2004-03-18 Japan Science & Technology Corp 酸化物基板上への集積回路装置の製造方法及び装置
JP2005281113A (ja) * 2004-03-31 2005-10-13 Institute Of Physical & Chemical Research ニオブ酸リチウム基板およびその製造方法ならびにニオブ酸リチウム基板の表面処理方法
JP2006016254A (ja) * 2004-07-01 2006-01-19 Tdk Corp 単結晶の熱処理方法及びそれを用いた単結晶の製造方法

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* Cited by examiner, † Cited by third party
Title
See also references of EP2133450A4 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011093481A1 (ja) * 2010-02-01 2011-08-04 Jx日鉱日石金属株式会社 窒化物系化合物半導体基板の製造方法及び窒化物系化合物半導体自立基板
JPWO2011093481A1 (ja) * 2010-02-01 2013-06-06 Jx日鉱日石金属株式会社 窒化物系化合物半導体基板の製造方法及び窒化物系化合物半導体自立基板

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EP2133450A1 (en) 2009-12-16
EP2133450A4 (en) 2010-12-08
JPWO2008126532A1 (ja) 2010-07-22
US20100101486A1 (en) 2010-04-29

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