WO2008117381A1 - 試験装置及び電子デバイス - Google Patents

試験装置及び電子デバイス Download PDF

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Publication number
WO2008117381A1
WO2008117381A1 PCT/JP2007/056071 JP2007056071W WO2008117381A1 WO 2008117381 A1 WO2008117381 A1 WO 2008117381A1 JP 2007056071 W JP2007056071 W JP 2007056071W WO 2008117381 A1 WO2008117381 A1 WO 2008117381A1
Authority
WO
WIPO (PCT)
Prior art keywords
readout
fail
data
address
memory
Prior art date
Application number
PCT/JP2007/056071
Other languages
English (en)
French (fr)
Inventor
Shinichi Kobayashi
Original Assignee
Advantest Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantest Corporation filed Critical Advantest Corporation
Priority to JP2007541556A priority Critical patent/JP4939427B2/ja
Priority to DE112007003412T priority patent/DE112007003412T5/de
Priority to KR1020097021839A priority patent/KR20100005088A/ko
Priority to PCT/JP2007/056071 priority patent/WO2008117381A1/ja
Priority to US11/857,447 priority patent/US7757134B2/en
Publication of WO2008117381A1 publication Critical patent/WO2008117381A1/ja

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/44—Indication or identification of errors, e.g. for repair
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/1208—Error catch memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/56—External testing equipment for static stores, e.g. automatic test equipment [ATE]; Interfaces therefor
    • G11C2029/5606—Error catch memory

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Tests Of Electronic Circuits (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)

Abstract

　被試験メモリを試験する試験装置であって、被試験メモリからデータを読み出す読出アドレスと、被試験メモリの読出アドレスから読み出される読出データの期待値とを発生するパターン発生器と、被試験メモリの読出アドレスから読み出された読出データと期待値とを比較し、読出データのビット毎の良否を示すフェイルデータを出力する論理比較器と、読出データと期待値とが不一致である場合に、読出アドレスおよびフェイルデータの組を記憶する第１フェイルメモリと、被試験メモリの各アドレスに対応して、当該アドレスについてのフェイルデータを記憶する第２フェイルメモリと、第１フェイルメモリから読み出した読出アドレスおよびフェイルデータの組により、読出アドレスに対応して第２フェイルメモリに記憶されたフェイルデータを更新する更新部とを備える試験装置を提供する。
PCT/JP2007/056071 2007-03-23 2007-03-23 試験装置及び電子デバイス WO2008117381A1 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2007541556A JP4939427B2 (ja) 2007-03-23 2007-03-23 試験装置及び電子デバイス
DE112007003412T DE112007003412T5 (de) 2007-03-23 2007-03-23 Prüfgerät und elektronische Vorrichtung
KR1020097021839A KR20100005088A (ko) 2007-03-23 2007-03-23 시험 장치 및 전자 디바이스
PCT/JP2007/056071 WO2008117381A1 (ja) 2007-03-23 2007-03-23 試験装置及び電子デバイス
US11/857,447 US7757134B2 (en) 2007-03-23 2007-09-19 Test apparatus for testing a memory and electronic device housing a circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/056071 WO2008117381A1 (ja) 2007-03-23 2007-03-23 試験装置及び電子デバイス

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US11/857,447 Continuation US7757134B2 (en) 2007-03-23 2007-09-19 Test apparatus for testing a memory and electronic device housing a circuit

Publications (1)

Publication Number Publication Date
WO2008117381A1 true WO2008117381A1 (ja) 2008-10-02

Family

ID=39775927

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2007/056071 WO2008117381A1 (ja) 2007-03-23 2007-03-23 試験装置及び電子デバイス

Country Status (5)

Country Link
US (1) US7757134B2 (ja)
JP (1) JP4939427B2 (ja)
KR (1) KR20100005088A (ja)
DE (1) DE112007003412T5 (ja)
WO (1) WO2008117381A1 (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7508724B2 (en) * 2006-11-30 2009-03-24 Mosaid Technologies Incorporated Circuit and method for testing multi-device systems
US7913128B2 (en) 2007-11-23 2011-03-22 Mosaid Technologies Incorporated Data channel test apparatus and method thereof
KR101203412B1 (ko) * 2008-07-28 2012-11-21 가부시키가이샤 어드밴티스트 시험 장치 및 시험 방법
US8312331B2 (en) * 2009-04-16 2012-11-13 Freescale Semiconductor, Inc. Memory testing with snoop capabilities in a data processing system
KR20120117347A (ko) * 2011-04-15 2012-10-24 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 테스트 방법
US9805825B1 (en) * 2015-08-24 2017-10-31 Apple Inc. Memory error capture logic
US10019332B1 (en) * 2017-03-10 2018-07-10 Western Digital Technologies, Inc. Non-volatile memory with program failure recovery
KR102670596B1 (ko) * 2022-07-04 2024-05-31 주식회사 와이씨 반도체 테스트를 위한 버퍼 메모리의 어드레스 구성 방법, 그리고 이를 구현하기 위한 반도체 테스트 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04194682A (ja) * 1990-11-27 1992-07-14 Yokogawa Electric Corp Ｌｓｉテスタ
JPH0980122A (ja) * 1995-09-11 1997-03-28 Advantest Corp 半導体試験装置の不良解析メモリ装置
JP2001357696A (ja) * 2000-06-16 2001-12-26 Nec Corp 半導体メモリ検査装置と検査方法及び検査プログラムを記録した記録媒体
JP2002278849A (ja) * 2001-03-15 2002-09-27 Toshiba Microelectronics Corp 半導体試験装置
JP3356098B2 (ja) * 1999-02-03 2002-12-09 日本電気株式会社 半導体メモリ試験装置
JP3428200B2 (ja) * 1994-12-28 2003-07-22 安藤電気株式会社 不良セル救済解析装置および救済解析方法
JP2007102940A (ja) * 2005-10-05 2007-04-19 Advantest Corp 試験装置、及び試験方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH1010195A (ja) * 1996-06-20 1998-01-16 Fujitsu Ltd 半導体集積回路の試験方法及び試験装置
JP3549174B2 (ja) * 1996-09-30 2004-08-04 株式会社アドバンテスト メモリ試験装置
KR100299716B1 (ko) * 1997-07-24 2001-09-06 가야시마 고조 Ic시험장치및방법
US6910155B2 (en) * 2001-06-25 2005-06-21 Hewlett-Packard Development Company, L.P. System and method for chip testing
JP2003132696A (ja) * 2001-10-22 2003-05-09 Advantest Corp 半導体試験装置
US6880117B2 (en) * 2002-06-14 2005-04-12 Macronix International Co., Ltd. Memory device test system and method
US7159145B2 (en) * 2003-05-12 2007-01-02 Infineon Technologies Ag Built-in self test system and method
JP4308637B2 (ja) * 2003-12-17 2009-08-05 株式会社日立製作所 半導体試験装置
JP2005259266A (ja) 2004-03-11 2005-09-22 Advantest Corp 試験装置及び試験方法
JP4153884B2 (ja) 2004-03-11 2008-09-24 株式会社アドバンテスト 試験装置及び試験方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04194682A (ja) * 1990-11-27 1992-07-14 Yokogawa Electric Corp Ｌｓｉテスタ
JP3428200B2 (ja) * 1994-12-28 2003-07-22 安藤電気株式会社 不良セル救済解析装置および救済解析方法
JPH0980122A (ja) * 1995-09-11 1997-03-28 Advantest Corp 半導体試験装置の不良解析メモリ装置
JP3356098B2 (ja) * 1999-02-03 2002-12-09 日本電気株式会社 半導体メモリ試験装置
JP2001357696A (ja) * 2000-06-16 2001-12-26 Nec Corp 半導体メモリ検査装置と検査方法及び検査プログラムを記録した記録媒体
JP2002278849A (ja) * 2001-03-15 2002-09-27 Toshiba Microelectronics Corp 半導体試験装置
JP2007102940A (ja) * 2005-10-05 2007-04-19 Advantest Corp 試験装置、及び試験方法

Also Published As

Publication number Publication date
US20080235540A1 (en) 2008-09-25
JP4939427B2 (ja) 2012-05-23
KR20100005088A (ko) 2010-01-13
US7757134B2 (en) 2010-07-13
JPWO2008117381A1 (ja) 2010-07-08
DE112007003412T5 (de) 2010-01-21

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