WO2008096518A1 - 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法 - Google Patents
遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法 Download PDFInfo
- Publication number
- WO2008096518A1 WO2008096518A1 PCT/JP2008/000012 JP2008000012W WO2008096518A1 WO 2008096518 A1 WO2008096518 A1 WO 2008096518A1 JP 2008000012 W JP2008000012 W JP 2008000012W WO 2008096518 A1 WO2008096518 A1 WO 2008096518A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- distance
- material melt
- shielding member
- heat shielding
- end surface
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020097016551A KR101416093B1 (ko) | 2007-02-08 | 2008-01-10 | 차열 부재 하단면과 원료 융액면 사이의 거리 측정방법 및 그 거리 제어방법 |
EP08702753.8A EP2128310B1 (en) | 2007-02-08 | 2008-01-10 | Method for measuring distance between lower end surface of heat shielding member and material melt surface, and method for controlling the distance |
US12/448,845 US9260796B2 (en) | 2007-02-08 | 2008-01-10 | Method for measuring distance between lower end surface of heat insulating member and surface of raw material melt and method for controlling thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-029091 | 2007-02-08 | ||
JP2007029091A JP5167651B2 (ja) | 2007-02-08 | 2007-02-08 | 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法 |
Publications (1)
Publication Number | Publication Date |
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WO2008096518A1 true WO2008096518A1 (ja) | 2008-08-14 |
Family
ID=39681432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/000012 WO2008096518A1 (ja) | 2007-02-08 | 2008-01-10 | 遮熱部材下端面と原料融液面との間の距離の測定方法、及びその距離の制御方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US9260796B2 (ja) |
EP (1) | EP2128310B1 (ja) |
JP (1) | JP5167651B2 (ja) |
KR (1) | KR101416093B1 (ja) |
WO (1) | WO2008096518A1 (ja) |
Cited By (2)
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JP2011246341A (ja) * | 2010-04-26 | 2011-12-08 | Sumco Corp | シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法 |
WO2023231259A1 (zh) * | 2022-05-31 | 2023-12-07 | 西安奕斯伟材料科技有限公司 | 一种用于拉晶炉的热场控制装置及拉晶炉 |
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JP5404264B2 (ja) * | 2009-09-07 | 2014-01-29 | Sumco Techxiv株式会社 | 単結晶シリコンの製造方法及び単結晶シリコンの製造装置 |
JP5333146B2 (ja) * | 2009-10-14 | 2013-11-06 | 株式会社Sumco | シリコン単結晶の引上げ方法 |
JP5577873B2 (ja) * | 2010-06-16 | 2014-08-27 | 信越半導体株式会社 | 遮熱部材下端面と原料融液面との間の距離の測定方法、遮熱部材下端面と原料融液面との間の距離の制御方法、シリコン単結晶の製造方法 |
JP2012240862A (ja) * | 2011-05-16 | 2012-12-10 | Mitsubishi Materials Techno Corp | 単結晶インゴットの製造装置および液面位置測定方法 |
CN102251275B (zh) * | 2011-07-07 | 2013-07-10 | 杭州慧翔电液技术开发有限公司 | 能够测量熔硅液面与导流筒之间距离的单晶炉热场装置 |
WO2015047816A1 (en) * | 2013-09-30 | 2015-04-02 | Gt Crystal Systems, Llc | Method of automatically measuring seed melt back of crystalline material |
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JP6256284B2 (ja) * | 2014-10-08 | 2018-01-10 | 信越半導体株式会社 | 遮熱部材下端面と原料融液面との間の距離の測定方法及びシリコン単結晶の製造方法 |
JP6428372B2 (ja) * | 2015-02-26 | 2018-11-28 | 株式会社Sumco | 原料融液液面と種結晶下端との間隔測定方法、種結晶の予熱方法、および単結晶の製造方法 |
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JP6812931B2 (ja) * | 2017-09-06 | 2021-01-13 | 株式会社Sumco | 液面レベル検出装置の調整用治具および調整方法 |
JP6919633B2 (ja) * | 2018-08-29 | 2021-08-18 | 信越半導体株式会社 | 単結晶育成方法 |
CN111218719A (zh) * | 2020-03-07 | 2020-06-02 | 姚仿英 | 一种智能化稳定热场单晶硅提纯设备 |
CN111962145A (zh) * | 2020-09-16 | 2020-11-20 | 西安奕斯伟硅片技术有限公司 | 检测熔体液面位置的方法、装置、设备及计算机存储介质 |
US20240026565A1 (en) | 2020-12-01 | 2024-01-25 | Shin-Etsu Handotai Co., Ltd. | Method for measuring distance between lower end surface of heat shielding member and surface of raw material melt, method for controlling distance between lower end surface of heat shielding member and surface of raw material melt and method for manufacturing silicon single crystal |
CN113403680A (zh) * | 2021-06-18 | 2021-09-17 | 西安奕斯伟硅片技术有限公司 | 一种监测熔体液面位置的方法、系统及计算机存储介质 |
JP2023038005A (ja) * | 2021-09-06 | 2023-03-16 | 株式会社Sumco | 単結晶の製造方法及び単結晶製造装置 |
Citations (13)
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JPH0396356U (ja) * | 1990-01-18 | 1991-10-02 | ||
JPH04328425A (ja) * | 1991-04-26 | 1992-11-17 | Sumitomo Metal Ind Ltd | 液面位置測定方法,装置及び単結晶引上方法,装置 |
JPH0656588A (ja) | 1992-06-30 | 1994-03-01 | Kyushu Electron Metal Co Ltd | シリコン単結晶の製造方法 |
JPH06116083A (ja) | 1992-09-17 | 1994-04-26 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | るつぼ中の溶融材料の溶融レベル制御方法および装置 |
JPH07257991A (ja) | 1993-12-16 | 1995-10-09 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | シリコン単結晶の引上げ方法 |
JPH07277879A (ja) * | 1994-03-31 | 1995-10-24 | Komatsu Electron Metals Co Ltd | Cz法による単結晶製造装置および融液レベル制御方法 |
JPH1112079A (ja) * | 1997-06-19 | 1999-01-19 | Komatsu Electron Metals Co Ltd | 結晶体の引上げ方法およびその引上げ装置 |
JP2001342095A (ja) | 2000-05-31 | 2001-12-11 | Sumitomo Metal Ind Ltd | 単結晶引き上げ装置 |
JP2002527341A (ja) * | 1998-10-14 | 2002-08-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | シリコン結晶成長を制御するための方法およびシステム |
JP2004067441A (ja) * | 2002-08-06 | 2004-03-04 | Shin Etsu Handotai Co Ltd | 単結晶育成装置 |
JP2005015290A (ja) * | 2003-06-27 | 2005-01-20 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び単結晶 |
JP2005170773A (ja) * | 2003-12-15 | 2005-06-30 | Shin Etsu Handotai Co Ltd | 融液面初期位置調整装置及び融液面初期位置調整方法並びに単結晶の製造方法 |
JP2005187244A (ja) * | 2003-12-25 | 2005-07-14 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び単結晶 |
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JP4929817B2 (ja) * | 2006-04-25 | 2012-05-09 | 信越半導体株式会社 | 基準反射体と融液面との距離の測定方法、及びこれを用いた融液面位置の制御方法、並びにシリコン単結晶の製造装置 |
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2007
- 2007-02-08 JP JP2007029091A patent/JP5167651B2/ja active Active
-
2008
- 2008-01-10 EP EP08702753.8A patent/EP2128310B1/en active Active
- 2008-01-10 US US12/448,845 patent/US9260796B2/en active Active
- 2008-01-10 WO PCT/JP2008/000012 patent/WO2008096518A1/ja active Application Filing
- 2008-01-10 KR KR1020097016551A patent/KR101416093B1/ko active IP Right Grant
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JPH0396356U (ja) * | 1990-01-18 | 1991-10-02 | ||
JPH04328425A (ja) * | 1991-04-26 | 1992-11-17 | Sumitomo Metal Ind Ltd | 液面位置測定方法,装置及び単結晶引上方法,装置 |
JPH0656588A (ja) | 1992-06-30 | 1994-03-01 | Kyushu Electron Metal Co Ltd | シリコン単結晶の製造方法 |
JPH06116083A (ja) | 1992-09-17 | 1994-04-26 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | るつぼ中の溶融材料の溶融レベル制御方法および装置 |
JPH07257991A (ja) | 1993-12-16 | 1995-10-09 | Wacker Chemitronic Ges Elektron Grundstoffe Mbh | シリコン単結晶の引上げ方法 |
JPH07277879A (ja) * | 1994-03-31 | 1995-10-24 | Komatsu Electron Metals Co Ltd | Cz法による単結晶製造装置および融液レベル制御方法 |
JPH1112079A (ja) * | 1997-06-19 | 1999-01-19 | Komatsu Electron Metals Co Ltd | 結晶体の引上げ方法およびその引上げ装置 |
JP2002527341A (ja) * | 1998-10-14 | 2002-08-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | シリコン結晶成長を制御するための方法およびシステム |
JP2001342095A (ja) | 2000-05-31 | 2001-12-11 | Sumitomo Metal Ind Ltd | 単結晶引き上げ装置 |
JP2004067441A (ja) * | 2002-08-06 | 2004-03-04 | Shin Etsu Handotai Co Ltd | 単結晶育成装置 |
JP2005015290A (ja) * | 2003-06-27 | 2005-01-20 | Shin Etsu Handotai Co Ltd | 単結晶の製造方法及び単結晶 |
JP2005170773A (ja) * | 2003-12-15 | 2005-06-30 | Shin Etsu Handotai Co Ltd | 融液面初期位置調整装置及び融液面初期位置調整方法並びに単結晶の製造方法 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011246341A (ja) * | 2010-04-26 | 2011-12-08 | Sumco Corp | シリコン単結晶引き上げ装置及びシリコン単結晶の製造方法 |
WO2023231259A1 (zh) * | 2022-05-31 | 2023-12-07 | 西安奕斯伟材料科技有限公司 | 一种用于拉晶炉的热场控制装置及拉晶炉 |
Also Published As
Publication number | Publication date |
---|---|
US9260796B2 (en) | 2016-02-16 |
EP2128310B1 (en) | 2017-08-02 |
JP5167651B2 (ja) | 2013-03-21 |
EP2128310A1 (en) | 2009-12-02 |
EP2128310A4 (en) | 2012-06-06 |
JP2008195545A (ja) | 2008-08-28 |
US20100064964A1 (en) | 2010-03-18 |
KR101416093B1 (ko) | 2014-07-08 |
KR20090109101A (ko) | 2009-10-19 |
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