TW200833880A - Production method of semiconductor single crystal - Google Patents
Production method of semiconductor single crystalInfo
- Publication number
- TW200833880A TW200833880A TW96135889A TW96135889A TW200833880A TW 200833880 A TW200833880 A TW 200833880A TW 96135889 A TW96135889 A TW 96135889A TW 96135889 A TW96135889 A TW 96135889A TW 200833880 A TW200833880 A TW 200833880A
- Authority
- TW
- Taiwan
- Prior art keywords
- single crystal
- amount
- silicon single
- pulling
- production method
- Prior art date
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
To provide a method stably producing a nondefective silicon single crystal with good reproduction by a simple method and clearing the relation between the amount of variation caused when the capability for cooling a silicon single crystal by a cooler is changed and the amount of correction of other pulling conditions. In the production method, an endothermic amount Q of a cooler during pulling a silicon single crystal is measured to obtain a pulling speed correction amount Vq complying with the difference Q-Qref between a measurement value Q of the endothermic amount Q and a reference value Qref; then, a base value Vpg is modified by the pulling speed correction amount Vq; and the silicon single crystal is pulled at a modified pulling speed V.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2006310320A JP5181171B2 (en) | 2006-11-16 | 2006-11-16 | Semiconductor single crystal manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200833880A true TW200833880A (en) | 2008-08-16 |
| TWI362434B TWI362434B (en) | 2012-04-21 |
Family
ID=39553427
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW96135889A TW200833880A (en) | 2006-11-16 | 2007-09-27 | Production method of semiconductor single crystal |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP5181171B2 (en) |
| TW (1) | TW200833880A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106029958A (en) * | 2014-02-12 | 2016-10-12 | 信越半导体株式会社 | Silicon single crystal production device |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6281479B2 (en) * | 2014-12-10 | 2018-02-21 | 信越半導体株式会社 | Single crystal puller |
| JP7264043B2 (en) * | 2019-12-23 | 2023-04-25 | 株式会社Sumco | Single crystal growth method and single crystal growth apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3523986B2 (en) * | 1997-07-02 | 2004-04-26 | シャープ株式会社 | Method and apparatus for manufacturing polycrystalline semiconductor |
| JP4569103B2 (en) * | 2003-12-25 | 2010-10-27 | 信越半導体株式会社 | Single crystal manufacturing method |
| JP4513798B2 (en) * | 2006-10-24 | 2010-07-28 | 信越半導体株式会社 | Single crystal manufacturing apparatus and single crystal manufacturing method |
-
2006
- 2006-11-16 JP JP2006310320A patent/JP5181171B2/en active Active
-
2007
- 2007-09-27 TW TW96135889A patent/TW200833880A/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106029958A (en) * | 2014-02-12 | 2016-10-12 | 信越半导体株式会社 | Silicon single crystal production device |
| US10036100B2 (en) | 2014-02-12 | 2018-07-31 | Shin-Etsu Handotai Co., Ltd. | Apparatus for producing silicon single crystal |
| CN106029958B (en) * | 2014-02-12 | 2018-10-26 | 信越半导体株式会社 | Manufacturing device of single crystal silicon |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2008127216A (en) | 2008-06-05 |
| TWI362434B (en) | 2012-04-21 |
| JP5181171B2 (en) | 2013-04-10 |
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