TWI362434B - - Google Patents

Description

Nine, the invention description: [Technical region to which the invention pertains] The present invention relates to a semiconductor single-junction in which a semiconductor single method is made by a cooler, and is particularly related to the manufacture of a semiconductor single crystal. [Prior Art] + Manufacturing method for early crystallization of conductors. The material crystallization « is produced by the growth of the alpha method (4). Stretching Growth Early crystallized crystal rods are cut into wafers. The m* dry conductor element is formed by a component step of forming an element layer on the surface of the stone core. But in the singularity of 矽 single crystal (c., growing up is called native

Cbr〇wn-in) A crystal defect or oxygen nucleation of a defect (a defect introduced during the growth of the main road in the county). The native defect is considered to be the 2 defects at . ~ A point defect that has arisen in the growth of the year. With the progress of high integration and miniaturization of semiconductor circuits, the stone-like wafers are located near the surface layer where components are formed, and gradually prevent the occurrence of native defects. presence. Therefore, the possibility of manufacturing a defect-free crystal is reviewed. Further, the crystal defects which deteriorate the characteristics of the elements contained in the bill crystals are classified into the following three types of defects. It is called the defect of Crytal Originated Particle (C〇P), that is, the cavity defect (V defect) which is formed by the accumulation of voids. b) Oxidation Induced Stacking Fault (R-0SF) defects. C) In the case of the day-to-day stagnation of the stagnation of the slabs

7054-9161-PF 1362434 trap). • V-deficient iw is a cause of defects such as breakdown voltage characteristics or component separation of the oxide film in the semiconductor device step. The K-OSF and I defects have an adverse effect on leakage current characteristics. A defect-free single crystal is recognized or defined as a crystal that is completely free of the above three defects or substantially free of the above three defects. On the other hand, the prior art implements a method for fabricating a semiconductor single crystal in which a cooler is disposed around a semiconductor single crystal stretched from a melt by a CZ furnace, and is cooled by a cooler. Crystallization and stretching to grow a single crystal to produce a single crystal. The cold header can improve the cooling effect of the single crystal and accelerate the speed of the drawing. Therefore, by providing a cooler, it is possible to greatly shorten the growth of the singular SB. Further, the shortening of the growth time of the single crystal can suppress the deterioration of the furnace environment caused by the evaporating material from the molten liquor or the single crystal collapse caused by the deterioration of the crucible. Therefore, the productivity of the single crystal can be improved by increasing the speed of growth of the single crystal. It is known that the behavior of the above three types of defects changes depending on the growth conditions of the growth rate (stretching speed) of the single crystal. That is to say, the distribution of the three types of defects is observed by the single crystal from the surface of the tantalum wafer which is cut perpendicularly to the single crystal stretching axis: The long speed (stretching speed) is very large. The growth rate of the single crystal of the shadow 1 (3) stretching speed) will lead to defects in the entire area of the wafer. In addition, the growth rate (stretching speed) of Shixi single crystal will also cause Shixi wafers to become a defect-free area. •’ 7〇54·916】-ΡΡ· 6

<S^62434 In recent years, there has been an increase in the demand for manufacturing into a defect-free area, in which the above-mentioned three defects and the above-mentioned three kinds of defects are areas. The domain system...there is no such thing as a whole! The following document describes an invention in the patent literature, which is based on the distance between the lower end and the melt liquid surface, and the growth condition V/G (V: growth rate (pull) Stretching speed), G: The temperature gradient in the axial direction near the 1 point of the single crystal of Shixi is μ 曰 阳 又 又 又 八 又 又 又 又 又 又 又 又 , , , , 调整 调整 调整 调整 调整 调整 调整 调整 调整In addition, 'the invention is described in the following Patent Document 2, and the surface is placed in the furnace to be blackened. amp &; 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今 今The variation of the heat absorption of the crystal is reduced. ... In addition, the invention is described in the following document: in the following: I, the length, the distance from the surface of the melt to the cooler are all: In the case of direct control ratio, the cooler is designed and placed in the furnace

Further, in the following Patent Document 4, an invention relating to a water-cooled type of cooler structure is described. You #@ 〇 π invented that the cold potassium water path is spirally arranged around the single crystal. [Patent Document No. 2000-281478] [Patent Document 2] Japanese Laid-Open Patent Publication No. Hei. No. Hei. No. 2002-255682 SUMMARY OF THE INVENTION [Generally speaking] for the formation of the above three defects on the entire surface of the wafer

7054-9161-PF 7 < s 1362434 The range of growth rate (stretching speed) of the defect-free region and the recognition of the stretching conditions are very limited. Therefore, 'for the flawless stone Xi Shanmei s, '·. In the case of the B-day earthquake, the stretching speed must be controlled very precisely, and therefore, the lack of release property means that productivity is poor. Therefore, there is an urgent need in the industry to stably produce a single crystal having excellent reproducibility and no defects by a simple method. Even if the cooler is designed to obtain the desired cooling performance, there is a case where the ability to cool the single crystal by the cooler differs from the initial stage due to the change over the years. Further, in the cz furnace, in addition to the cooler, various furnace internal members such as a heat shield plate are present. The ability to cool the single crystal is affected by various manufacturing conditions such as the frame I structure of the cz furnace such as the heat shield plate, the structure of the furnace member, and the electric power of the heater. In addition, the invention of the above-mentioned patent document 2 reduces the variation of the heat absorption from the single crystal of the stone, which is caused by the individual difference of the cooler, but is caused by the above-mentioned long-term change of the cage: 3丨千克化# In terms of changes in the capacity of the cold sector, there is no corresponding way.

Because, 'even if there is no defect in a certain stretching condition, it can be obtained without defects. However, due to the continuation of the ability to cool the single crystal by the cooler, there may be no defect. The case of the single crystal of Shi Xi. However, none of the above-mentioned Patent Documents 1 to 4 discloses how the other stretching conditions can be adjusted in the case where the capacity of the crystal is changed by the cooler. In view of the above problems, the relationship between the correction amounts when the ability to cool the single crystal of the cooling stone of the present invention is changed, and for the simple purpose, it is understood that the amount of change by the cooler and other stretching conditions are stably manufactured. Reproducible and no

7054-9161-PF 1362434 Defective single crystal. [Means for Solving the Problem] The manufacturing method of the method for squeezing and cooling a semiconductor is disclosed. The first invention provides a semiconductor single crystal, which is formed by a semiconductor single crystal stretched from a melt. Cooling the semiconductor single crystal to stretch a single crystal to produce a semiconductor single crystal, the semiconductor single crystal comprising:

In addition to presetting the reference value of the heat absorption of the cooler under the condition that the defect-free semiconductor can be fabricated, and the stretching speed (4) is not provided (with the heat absorption for the benefit of manufacturing a defect-free semiconductor single crystal) The relationship between the amount of change corresponding to the reference value and the amount of change corresponding to the base value of the tensile speed, and the amount of heat absorbed by the X-S-S cooler, and the measured value of the suction-free amount of the cooler and The amount of change in the tensile speed corresponding to the difference in the reference value is corrected by the amount of change obtained, and the single crystal is obtained. The second invention of the second invention is the heat absorption of the cooler in the second invention. When the difference between the measured value and the measured value is 4% or more of the reference value, the tensile length is corrected and the semiconductor single fet a ' is stretched, and '〇曰曰〇3 0Θ Ύ7 is the first invention in the cooler. When the measured value of the heat absorption is 4, when it is 4% or more of the reference value, the tensile speed is corrected by the 〇()lm m/mi η or more, and the . The semiconductor single crystal is stretched.

7054-9161-PF 9 1362434 The fourth invention provides a semiconductor single crystal in which a semiconductor single crystal is stretched from a melt and a semiconductor single crystal is cooled by a cooler. Pulling a single crystal to produce a semiconductor single crystal, 4 conductors include: 卞 瓶 早 早 早 早 早 早 早 制造 制造 制造 除了 除了 除了 除了 除了 除了 除了 除了 除了 制造 制造 制造 制造 除了 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造 制造Speed

The cooling of the semiconductor single crystal and the basis of the stretching speed are also preset in relation to the amount of change corresponding to the reference value of the reference value for manufacturing the heat sink of the defect-free device, and predicting the suction of the cooler When the amount of heat absorbed by the cooler changes, the amount of change in the reference value of the heat is determined based on the relationship, and the amount of change in the tensile speed corresponding to the amount of change in the prediction is obtained, and the amount of change is corrected only by the amount of change obtained. Stretching speed to stretch the semiconductor single crystal. According to a fifth aspect of the invention, in the fourth invention, when the predicted change amount of the heat absorption amount of the cooler is 4% or more of the reference value, the tensile rate is corrected to stretch the semiconductor single crystal. According to a sixth aspect of the invention, in the case where the predicted change in the amount of heat absorption of the cooler is 4% or more of the reference value, the semiconductor is stretched only by correcting the tensile speed by a change amount of 〇·01 m m/min or more. Single crystal. A seventh invention provides a method of producing a semiconductor single crystal, which

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7054-9161-PF 10 1362434, in which a cooler is arbitrarily raised and lowered around a semiconductor single crystal stretched from a melt, and a semiconductor single crystal is cooled by a cooler, and a semiconductor single crystal is stretched and grown to manufacture a semiconductor single crystal, the method for manufacturing the semiconductor single crystal includes: presetting cooling in advance, in addition to a reference value of a heat sink of a cooler that can be manufactured under conditions of manufacturing a defect-free semiconductor single crystal, and a reference position of the cooler The relationship between the lifting distance of the device and the amount of change in the amount of heat absorbed by the cooler, taking the reference value of the heat of the cooler to the reference value, measuring the heat absorption of the cooler, and determining the measured value of the heat absorbed by the cooler based on the above relationship And the difference between the reference values and the rise and fall distance of the cooler, the position of the cooler is corrected only by the obtained lifting distance to stretch the semiconductor single crystal.

According to a seventh aspect of the invention, in the seventh invention, when the difference between the measured value of the heat absorption amount of the cooler and the reference value is 4% or more of the reference value, the position of the cooler is corrected to stretch the semiconductor single crystal. According to a ninth aspect of the invention, there is provided a method for producing a semiconductor single crystal, wherein a cooler is lifted and lowered around a semiconductor single crystal stretched from a melt, and a semiconductor is cooled by a cooler to cool the semiconductor single crystal. The semiconductor single crystal is used to manufacture a semiconductor single crystal, and the semiconductor single crystal manufacturing method includes: removing a reference value and a cooling device of a heat sink of a cooler which is set in advance under conditions capable of producing a semiconductor single crystal without defects Benchmark

7054-9161-PF 11 1362434 The relationship between the lifting distance of the cooler and the change in the heat absorption of the cooler is also set in advance to set the reference value of the heat of the cooler to the reference value. In the case of the life of the dragon, the amount of change corresponding to the reference value of the suction, the ·, and the 冷却 of the cooler is predicted, and the lifting distance of the cooler corresponding to the above-mentioned predicted 4 apical change 求出 is obtained based on the above relationship, only The position of the cooler is corrected by the obtained lifting distance to stretch the semiconductor single crystal. According to a ninth aspect of the invention, in the case where the predicted change amount of the heat absorption amount of the cooler is 4% or more of the reference value, the position of the cooler is corrected to stretch the semiconductor single crystal. The third invention provides a method for producing a semiconductor single crystal in which a cooler is disposed around a semiconductor single crystal stretched from a melt and a semiconductor single crystal is cooled by a cooler, and the semiconductor is stretched and grown.

Single crystal to produce a semiconductor single crystal, the method for manufacturing the semiconductor single crystal includes: a reference value of a heat sink of a cooler which is set in advance under a manufacturing condition capable of producing a defect-free semiconductor single crystal, and a lower end of the self-heating shield to The reference distance of the melt is also preset to the relationship between the amount of correction from the lower end of the heat shield plate to the melt and the amount of heat absorbed by the cooler to set the reference value of the heat sink of the cooler. Heat absorption,

7054-9161-PF 12 < S 1362434 Calculate the distance correction amount from the & shield plate under # to the melt corresponding to the difference between the measured value and the reference value of the heat absorption amount of the cooler according to the relationship The distance of the melt in the lower end of the heat shield plate is corrected by the obtained distance correction amount to stretch the semiconductor single crystal. According to a twelfth aspect of the present invention, in the case where the difference between the measured value of the heat absorption amount of the cooler and the reference value is 4% or more of the reference value, the distance from the heat-receiving plate to the melt is corrected, and the stretch is performed. Single crystal of semiconductor. According to a third aspect of the invention, there is provided a method for producing a semiconductor single crystal, wherein a cooler is disposed around a semiconductor single crystal stretched from a melt, and a semiconductor single crystal is cooled by a cooler, and the semiconductor wafer is stretched and grown. Crystallization to produce a semiconductor single crystal, the method for manufacturing the semiconductor single crystal includes: a reference value of a heat sink of a cooler which is previously set under a manufacturing condition capable of producing a defect-free semiconductor single crystal, and a lower end of the self-heating shield plate The reference distance of the liquid is also preset to the relationship between the correction amount from the lower end of the heat shielding plate to the melt and the amount of change in the heat absorption of the cooler, so as to set the heat absorption amount of the cooler to the reference value and the heat absorption amount in the cooler. When a change occurs, the amount of change corresponding to the reference value of the heat absorption amount of the cooler is predicted, and the distance correction amount from the lower end of the heat shielding plate to the melt corresponding to the amount of change in the prediction is obtained based on the relationship described above, The distance correction amount is obtained to correct the distance from the lower end of the heat shield plate to the melt to stretch the semiconductor single crystal. 7054-9161-PF 13 1362434 The U invention is based on the invention of 13 in the case where the mouth of the cooler and the heat prediction become 4% or more of the value of the test, and the distance of the melt at the lower end of the heat shield plate is corrected. The semiconductor single crystal is stretched. In the first invention shown in FIG. 5, the heat absorption set Q of P 20 is measured in the stretching of the material crystal 10, and the tensile speed correction amount corresponding to the difference Q_Qref between the measured value 卩 and the reference value Qref of the heat absorption amount q is obtained. h, and by using the stretching speed correction vq correction base value Vpg, the 矽 single crystal 1 〇 is stretched by correcting the stretching speed v. According to the first aspect of the invention, it is understood that the relationship between the amount of change (Δ(1) and the correction amount (q) of the tensile speed v) is determined by the amount of change in the monthly b-force of the single crucible by the cooler. Since the tensile speed V is corrected in relation to the relationship, the single crystal 10 which is reproducible I and free from defects can be stably produced by the simple method. Further, it can be known from experiments that the heat absorption with the cooler 20 (refer to value

The amount of change Δ corresponding to Qref (3 is less than 4% of the reference value Qref, and the value of the tensile speed v of the single crystal which can be produced without defects is hardly changed. Further, it is experimentally known that the cooler 2 Reference value of 吸 吸 吸

When the amount of change in the Qref is 4% or more of the reference value Qref, if the tensile speed V is corrected and the single crystal 10 is stretched by changing the base value Vpg by 〇〇lmm/min or more, the defect can be stretched. Therefore, in the second invention, although the tensile speed V is not corrected from the base value Vpg, the reference value of the reference value of the heat absorption 卩 of the cooler 2 is changed to 参考AQ as the reference value Qref. In the case of more than 7054-9161-PF 14 < s 1362434, the tensile speed v crystal 1 〇 is corrected so as to vary from the base value vPg. In the third aspect of the invention, the tensile speed V is not corrected from the base value Vpg. However, when the amount of change corresponds to the reference value Qref of the amount of heat absorption Q of the cooler 20 = the amount of change becomes 4% or more of the reference value Qref, From the basis of 2, the VPg is changed by 0.01 mm/min or more, and the stretching speed v is corrected and the crystallized 1 is crystallized twice. _ " The first invention described above belongs to the invention of correcting the tensile speed v by capturing the change in the heat absorption amount Q of the cooler 2G during the stretching of the single crystal 10 . The fourth invention belongs to the heat absorption in the cooler 2

Then, the change of the heat absorption amount q of the cooler 20 is predicted, and the invention of the stretch is corrected. In other words, in the fourth invention, as shown in Fig. 7, when the amount of heat absorption Q of the cooler 2 is changed, the amount of change corresponding to the reference value Qref of the amount of heat absorbed by the cooler 20 is predicted. (3) Find the tensile speed correction amount vq corresponding to the predicted change meter, and correct the base value Vpg by the tensile speed correction amount Vq, and stretch the 矽 order with the corrected tensile speed v Crystallization] 〇. According to the fourth invention, the amount of change (Δ Q) when the ability to cool the stomach 2 to cool the single crystal 曰 10 is changed, and the other stretching conditions are 0 (Vq). In the relationship between the two, the stretching speed V is corrected based on the relationship. Therefore, the single crystal 1 〇 which is excellent in reproducibility and free from defects can be stably produced by a simple method. In the fifth invention, the second invention Similarly, when the predicted change amount Δ q of the Q in the endothermic state of the cooler 2 is less than the reference value Q, it will not

7054-9161-PF 15 丄北2434 Correction of the tensile speed V; in the case where the same predicted change amount ΔQ is more than $% of the reference value Q, the tensile speed V is corrected in such a manner as to vary from the basic value Vpg, and pull Stretching a single crystal 1 〇. In the sixth invention, as in the third invention, when the predicted change amount Δq of the heat absorption 1 Q of the cooler 2 is less than 4% of the reference value Q, the tensile speed V is not corrected; When the predicted change amount ΔQ is 4 乂 or more of the reference value Q, the tensile speed V is corrected so as to vary from the base value Vpg by 〇. Olmm/min or more, and the single crystal is stretched by 1 〇. In the first invention described above, the film is cooled in the stretching of the single crystal 10 . The heat absorption of D 2 0 corrects the stretching speed V from the case where the reference value changes by e f . On the other hand, in the seventh invention, when the heat absorption amount q of the cold header 20 changes during the stretching of the single crystal 10, the change is made to cancel the change and return it to the reference value Qref. Correct the position p of the cooler 2〇. That is, in the seventh invention, as shown in Fig. 8, the measured heat absorption amount Q' of the cooler 20 corresponds only to the difference aq between the measured value q of the heat absorption amount q of the cooler 2 and the reference value Qrei. The position 2 of the cooler 2 is corrected by the lifting distance pq of the cooler 2 to stretch the single crystal 1 〇. According to the seventh aspect of the invention, the relationship between the amount of change (ΔQ) when the ability to cool the single crystal 10 by the cooler 2 is changed, and the correction amount (Pq) of the cooler position p is known, and according to the above relationship Since the position P of the cooler 20 is corrected, it is possible to stably manufacture a single crystal 1 再现 which is excellent in reproducibility and free from defects by a simple method. In the eighth aspect of the invention, as in the second invention, when the heat absorption of the cooler 20 is less than 4% of the reference value q, the Δq in the culture is not corrected.

7054-9161-PF 16 1362434 The position P of the cooler 20; in the case where the same amount of change is more than the reference value q, the position p of the cooler 2〇 is corrected, and the tensile 矽 single crystal 10° is in the above In the invention of the invention, in the stretching of the cut single crystal 10, the cooler 2 is captured. The position of the cooler 2 is corrected by the change in the amount of heat absorbed Q. The ninth invention of the ground is to predict the change in the amount of heat absorbed by the cooler 20 when the heat absorption amount 9 of the cooler 2 changes. The cooler is placed in P. In other words, in the ninth invention, as shown in FIG. 1A, when the amount of heat absorption Q of the cooler 2 is changed, the amount of change corresponding to the reference value (4) of the (4)_ of the cooler 2 is predicted. The cooler position correction amount Pq corresponding to the predicted change amount ΔQ is obtained, and the cooler 2 is corrected by the cooler position repair amount h. The reference position is ppq, and the single crystal 1 〇 is stretched at the corrected cooler position P. According to the ninth invention, it is understood that the crystal 1 is cooled by the cooler 2 . The amount of change in the ability to change. According to the relationship, and according to the relationship and correcting the position 因 according to the predicted amount of change, s' can stabilize the crying reproducibility and the defect-free single crystal 1 by the simple method. As in the second invention, the predicted change amount of the cooling number 2 〇 heat Q Μ is less than 4% of the reference value 9 of the Japanese temple cooler 2 . Position Ρ; when the same predicted change amount AQ reaches 4% or more of the parameter: value Q, the cooling crystallization is single crystal. Position and stretch

7054-9161-PF 17 丄 434 In the first invention described above, the stretching speed V is corrected in the case where the heat absorption Q of the cold packer 20 changes from the reference value Qref in the stretching of the single crystal 1 〇: In contrast, the 'first' invention is: in the case where the heat absorption Q of the cooler 2G changes in the stretching of the single crystal of the stone, the method of correcting the change and returning it to the reference value Qref is corrected. The distance D from the lower end of the heat shielding plate 8 to the melt 5. That is, in the eleventh invention, as shown in Fig. 8, the amount of heat absorption Q' of the cooler 2 is measured by the difference between the measured value Q and the reference value Qref of the heat absorption amount Q of the cooler 2 The distance D from the % under the heat shielding plate 8 to the liquid 5 was corrected by the distance DCI to stretch the stone single crystal 1 〇. According to the eleventh invention, since the amount of change (AQ) when the ability to cool the single crystal 10 by the cooler 2 is changed, and the correction amount D from the lower end of the heat shielding plate 8 to the melt 5 (Dq) In the relationship between the two, the distance D is corrected based on the above relationship. Therefore, it is possible to stably manufacture a single crystal 1 再现 which is excellent in reproducibility and free from defects by a simple method. In the twelfth invention, as in the second invention, when the amount of change AQ in the endothermic heat of the cooler 2 is less than 4% of the reference value q, the uncorrected distance is equal to the reference amount q. In the case of 4% or more, the distance D is corrected and the single crystal of the stone is stretched by 1 〇. In the eleventh invention described above, the change in the heat absorption amount Q of the cooler 20 is captured in the stretching of the single crystal 1 而, and the distance D from the lower end of the heat shielding plate 8 to the melt 5 is corrected. On the other hand, in the thirteenth aspect of the invention, when the amount of heat absorption Q of the cooler 2 is changed, the change d of the amount of heat absorbed by the cooler 2 is predicted to correct the same distance D. 7054-9161-PF 18 1362434 In other words, in the thirteenth invention, as shown in FIG. 14 , when the heat absorption amount Q of the cooler 20 changes, the reference of the heat absorption q of the cooler 2Q is predicted. The value (4) corresponds to the amount of change AQ, and the distance correction 1 Dq corresponding to the predicted change amount ΔQ is obtained, and the reference distance DPS is corrected by the distance correction amount Dq, and the singular single crystal is stretched at the corrected distance D 10. According to the thirteenth invention, the amount of change (AQ) when the ability to cool the single crystal 1 藉 by the cooler 20, and the correction of the distance D from the lower end to the melt 5 by the heat shield plate 8 (Dq) Between the relationship, and according to the "Hai relationship and correcting the distance d in response to the amount of change, therefore, it is possible to stably manufacture a single crystal 10 ° with good reproducibility and no defects by a simple method. In the 14th invention, Similarly to the second invention, when the predicted change f Δq of the heat absorption 1 Q of the cooler 2 is less than 4% of the reference value Q, the distance D is not corrected; and when the same amount of change AQ reaches the reference value or more Next 'correct the distance D and stretch the stone single crystal 1 〇.

[Embodiment] Hereinafter, an embodiment of a method for producing a semiconductor single crystal of the present invention will be described with reference to the drawings. Embodiments of the present invention will be described below with reference to the drawings. Fig. 1 is a schematic side view showing the configuration of a single crystal stretching apparatus according to an embodiment. As shown in Fig. 1, the single crystal stretching apparatus 1 of the embodiment is provided with a CZ furnace (reaction chamber) 2 as a container for single crystal stretching. In the CZ furnace 2, the raw material of the polycrystalline ruthenium is set to be melted and collected into a melt.

7054-9161-PF 19 Liquid 5 quartz _3. Quartz collapsed 3 covers. In the quartz crucible b s @ 卜 side is covered with black lead 坩埚 11 - and dissolves the polycrystalline raw material in the quartz ... sub-cooling heater 9. The output of the twister 9, ',. It is formed into a cylindrical shape. Heating 】out (power, .kff) is controlled, and I. For example, the output of the heater 5 is detected as "w δ", so that the detected temperature is the feedback amount, and the temperature of the melt 5 is changed to the target temperature.蚂3$卜·*· π里仏2丄 contains the stretching ^ square 6 and the stretching mechanism 4. The stretching mechanism 4 is the stretching axis 4 a and the stretching axis 4 a mountain ^ seed 曰... The seed crystal chuck 4c of the 4a. The seed crystal 14 is held by the Japanese 顼 4c. In the quartz crucible 3, the polycrystalline ruthenium (6) is heated and melted. ...extension, extension axis I, ΓΓ crystal) ° that is, 'the lowering of the stretching axis 4a, and the seed crystal 4c held by the nip end of the contact 1 is held by the crystal 14 and the melt 5 „. After the crystal 14 comes into contact with the melt 5, the stretching shaft 4a rises.矽

Early, "曰1 〇 system grows as the seed crystal 14 held by the seed crystal head 4c rises. At the time of stretching, the quartz ring 3 is rotated by the rotary shaft 15. In addition, the 'stretching mechanism 4' The stretching #4a is rotated in the opposite or the same direction as the rotary shaft 15. The rotary shaft 15 can be driven in the vertical direction, and the quartz crucible 3 can be moved up and down and moved at any position of the crucible. The external environment is isolated, so the furnace is maintained in a vacuum (for example, about 2 Torr). That is, the cz furnace 2 supplies argon as an inert gas.7, and from the cz furnace 2 gas

7054-9161-PF 20 1362434 The fault is helped by the exhaust. Therefore, the inside of the furnace 2 is reduced to a predetermined pressure. Between the single crystal stretching process (1 batch), c various vapors. Therefore, nitrogen gas 7 is supplied in while the evaporating material is discharged outside the cz furnace 2, and the evaporating material is removed from the CZ furnace 2. The supply flow rate of argon gas 7 is set in each step in one batch. The crystallization of the single crystal is reduced by 1 而 and the melt 5 is reduced. As the melt 5 decreases, the contact area between the melt 5 and the quartz hanger 3 changes, and the amount of dissolved oxygen from the center (4) 3 changes. This change has an effect on the oxygen concentration distribution in the stretched stone. - Above the Yingying 3, set the heat shield around the single crystal 11

Seesaw 8 (gas rectifier). The heat shielding plate 8 guides the center of the melted surface 5a of the melted liquid surface 5a through the melted surface 5a from the center of the four gas 7-conducting melt surface 5a which is supplied as a carrier gas in the CZ furnace 2. Moreover, it is a good gas system. The vaporized gas from the melt 5 is discharged together from the discharge port provided at the lower end of the cz furnace 2. Therefore, the gas flow rate on the liquid surface can be stabilized, and the oxygen evaporated from the a molten liquid 5 is maintained in a stable state. Further, the 'light-light board 8' shields the seed crystal 14 and the stone single crystal i which is grown by the seed crystal 14. In order to isolate the radiant heat generated in the high temperature part such as quartz entanglement 3, melt 5, and heat gain 9. Further, the heat shielding plate 8 can prevent the problem that the impurities (e.g., shi shi oxide) generated in the furnace adhere to the saponin crystal U and hinder the crystallization of the material. The distance between the heat shield plate & and the melt surface 5a is 大小, and the size of the 雊D can be adjusted by raising and lowering the rotary shaft 15 and changing the position of the upper and lower directions of the quartz worm 3. In addition, the heat shield plate 8 can be moved in the vertical direction by the lifting device.

7054-9161-PF 21 丄 2434 Full distance D. A cooler 2 is disposed around the single crystal 1 拉伸 which is stretched from the melt 5 . The cold packer 20 is disposed inside the heat shield plate 8. The cooler 2 is provided to cool the single crystal 10 and to grow and grow to a single crystal. In the present embodiment, a case where the imaginary water-cooling type cooler 2 is disposed in the furnace 2 is shown in Fig. 2 as a configuration diagram of the cooling water circuit of the non-cooler 20. For example, the cooler 20 constitutes a spiral tube 2 to surround the single crystal (ingot) in the stretching. The inlet 21a of the tube 21 is connected to the supply tube 22 outside the CZ furnace 2. The outlet 21b of the tube 21 is connected to the return valve 23 outside the CZ furnace 2. The spout outlet of the pump 24 is in communication with the supply pipe 22. The reservoir 25 is in communication with the return conduit 23. Once the pump 24 is actuated, the cooling water is pumped and passed through the inlet pipe 21a of the supply pipe 22 and the pipe 21 to flow through the pipe 21 at a predetermined flow rate. Thereby, heat exchange between the cooling water inside the tube 21 and the heat source including the single crystal 1 〇 around the tube 21 is performed.

It absorbs the heat released from the heat source containing the single crystal 10 of the stone. The cooling water that absorbs heat is discharged from the outlet 21b of the tube 21 to the reservoir 25 via the return pipe 23. The pump 24 draws the cooling water from the storage tank 25 and re-presses the cooling water. As described above, 'cooling water circulates in the cooler 2 to cool the single crystal 1 〇 in the stretching. Further, in Fig. 2, the description of the heat master for dissipating the heat-absorbing cooling water is omitted. Here, the heat absorption amount q(w) of the cooler 20 can be expressed by the following formula (1): where Tout represents the cooling water temperature (K) on the outlet 21b side of the tube 21, and Tin represents the inlet 2ia side of the tube 21. Cooling water temperature (K), f generation

7054-9161-PF 22 1362434 Table cooling water flow rate (g/sec), c represents the specific heat of water (about 4 lamps "κ". Q = (Tout-Tin) χ f χ c...(1) The heat absorption Q of the device 20, for example, as shown in Fig. 2, may be provided with a thermometer measuring sensor 31 in the supply pipe 22; a thermometer measuring sensor 32 and a flow meter 33 are provided in the return pipe 23; The inlet side cooling water temperature ηη is measured by the thermometer measuring sensor 31; the outlet side cooling water temperature w is measured by the temperature measuring sensor 32; and the cooling water stream m is measured by ^^33. The side cooling water temperature τιη and the outlet side cooling water temperature Tout are substituted into the above formula (1) to calculate the heat absorption Q 〇

The cooler 2ϋ can improve the cooling effect of the Monzon crystal 10 and can accelerate the increase of the drawing speed. Therefore, by the arrangement of the cooler 2, the growth time of the single crystal can be greatly shortened. In addition, the shortening of the growth of the 夕 单 single crystal 1 可以 can suppress the evaporation from the melt 5? The deterioration of the internal environment or the suppression of the collapse of the single crystal caused by the deterioration of the quartz crucible 3. Therefore, the productivity of the single crystal 1〇 can be improved by pursuing the south speed of the growth rate of the single crystal. In the apparatus of the present embodiment, the cooler 20 is freely moved up and down, and the position p of the cooler 20 can be freely adjusted. (First Embodiment) # Experiments were carried out by the apparatus shown in Fig. 2 to understand how the stretching condition of the ruthenium-free single crystal 1 变化 varies depending on the heat absorption Q of the cooling person. The experimental conditions are as follows. The size of the hot zone (h〇t z〇ne) of the CZ furnace 2 is 22 inches. .

7054-9161-PF 23 1362434 In the quartz crucible 3, the crystal rod of the single crystal u of l2〇 k is loaded. According to the day, (4) 5 gauges, 8 diameter birds are given to the order of the specific · π ', and the weight of each of the ingots for stretching, such as Ν〇悴敝π, in addition to stretching, = 2v'um, is using the same stretching conditions. In addition to cooling two: all of the ingots are 133 (g/sec). The cold water flow rate is set to _· 5 after the end of the crystal rod is stretched, the short 20, let the cooling || 2 〇 (5) S s cold water into the cold 荀 to see (4) the color change, etc. The air-burning 'can't see the results can be seen as shown in Figure 3 and Figure 4. Figure 3 is a diagram showing the relationship between the long illusion of the straight body of the 矽 single crystal and the position of the cooler (i.e., the figure of the ingot on each of the ingots. (10).) Figure 4 (a) The position of the right side of the body of the Shi Xidanmei a stick, the position of the axis (that is, the length of the trunk of the crystal) and the relative pull

The amount of change in the value VPg: base N. ·3, -... 2. In each of the ingots of Fig. 5, "Fig. 4(b) shows the length of the straight stem portion of the shaft of the single crystal 丨〇, and the amount of change with respect to the tensile yield j. The relationship of Δν( — ) is shown in N〇: the basic value Vpg is a schematic diagram of each ingot. N〇.6, N0.7, machine 8 here, the basic value of the stretching speed V v Shixi single crystal 10 pull Stretching speed. In Fig. 4, the base value Vpg of all positions in the direction of the axis in which the defect is not produced is defined as 〇.

7054-9161-PF 24 1362434 In Fig. 4, a void defect (v defect) is indicated by ▼; a defect is indicated by _; and an index defect (丨 defect) is indicated by X. ,

It can be seen from Fig. 3 that the method of stretching the respective ingots of N曰0.6~MG. 8 is the heat absorption of the cooler 2q compared with the stretching of the respective ingots of N0. lkW. #Results of defect evaluation of each of the above ingots: as shown in Fig. 4. Regarding the pore defect (v defect), the presence or absence of the defect was evaluated by infrared: tonography. Further, the off = index defect (I defect) was evaluated by optical microscopy after etching to evaluate the presence or absence of defects. Any defect that exists in one of the wafer faces is rated as "defective"; if any defect is not detected, it is judged as "no defect. From Figure 4(a), the basic value of the tensile velocity is Vpg. The corresponding change amount ΔΥ is close to 〇', that is, at the stretching speed &

When Vpg is nearby, it is possible to produce a defect-free single crystal 〇. Further, the heat absorption amount Q of the cooler under the manufacturing conditions in which the defect-free bill crystal 1G can be manufactured is defined as the reference value Qref. It can be seen from Fig. 4(b) that a 曰 饰 饰 々郃 々郃 々郃 々郃 20 20 absorbing heat q from the reference value

If Qref lowers ikW or so, it is because of the immortality, Α ώ 丄 Because the stretching speed V is attached to the base value vpg, it is impossible to produce a flawless stone single crystal. For the production of the single crystal 10 having no defects, it is necessary to further reduce the stretching speed V from the base value Vpg by 0.01 mm/min or more. When the stretching of each rod of N0.1~ is shown, the stretching of each of the s 曰 rods of Fig. 4(a) and Ν 0, 6 ^ Ν 0 8 β β · ϋ· aj , 8 In Fig. 4(b), the heat absorption q of the cooler 20 has a difference of U Wi 曰 W. This corresponds to 5 to 6% of the reference value Qref of the heat absorption amount Q of the cooler 20.

7054-9161-PF 25 1362434 In this way, when the heat absorption amount of the cooler 20 deviates from about 5 to 6% of the reference value, the speed of occurrence of the defect changes, and the tensile speed V must be changed from the basic value Vpg. 〇Wmin or more, in order to create a single crystal 1 〇. When the respective rods of the muscles 1 to 5 are stretched (Fig. 4 (3)), the heat absorption amount Q of the cooler 20 is also about 3 to 4% of the reference value Qref.

However, at that time, the speed of occurrence of the defect hardly changed, and the stretching speed ^ was in the vicinity of the base value Vpg, and it was impossible to manufacture the defect-free single crystal 1〇. As a result, when the heat absorption amount of the cooler 20 is only about 3 to 4% of the reference value, the speed of occurrence of the defect hardly changes, and when the tensile speed V is near the base value Vpg, it can be manufactured. No defects, early crystallization 10 0. Therefore, the reference value "the basis value Vpg of the heat absorption amount Q of the cooler 20 under the manufacturing conditions in which the defect-free single crystal 10 can be manufactured is set in advance, although it is sucked with the cooler 2 When the amount of change corresponding to the reference value Qref of the heat Q is less than 4% of the reference value Qref, Y does not correct the stretching speed v from the base value Vpg, but may correspond to the reference value Qref of the heat sink Q of the cooler 20. When the amount of change Δ卩 reaches 4% or more of the reference value Qref, the tensile speed v is corrected so as to vary from the base value Vpg by more than 0.1 mm/rnin, and the single crystal 10 is stretched. The control block diagram of the first embodiment is shown. As shown in Fig. 5, the control measures the heat absorption amount Q of the cooler 20 in the stretching of the single crystal, and determines the measured value Q of the heat absorption Q. And reference value

7054-9161-PF 26 ^362434

The Qref difference Q - Qref corresponds to the tensile speed correction amount Vq, and the Vq correction base value Vpg is corrected based on the tensile speed, and the single crystal 1 〇 is stretched at the corrected stretching speed V. The specific heat of water c, the reference value Qref of the heat absorption amount Q of the cooler 20, the drawing speed program Vpg, and the stretching speed correction amount Vq are previously stored in the memory device. ~, that is, the inlet side cooling water temperature Tln is measured by the thermometer measuring sensor 31 (process 1 〇 1); the outlet side cooling water temperature Tout is measured by the thermometer measuring sensor 32 (processing 1 〇 2 ); Tout-Tin is obtained by subtracting the inlet-side cooling water temperature Tin from the outlet-side cooling water temperature T〇ut (treatment 1〇3). On the other hand, the flow rate f of the cooling water is measured by the flow meter 33 (process 1〇4). Further, 'the specific heat of the water c is read by the memory device, and the T〇ut_Tin and the flow of the cooling water are obtained as described above based on the specific heat of the water c η, and the above (1) (7) = (Tc) is performed. ut_Tin) xixc〇 calculation process, and the heat absorption amount Q (kW) of the cooler 20 is obtained (process 1〇5). The reference value Qref of the heat absorption amount Q of the cooler 20 is read from the memory device (process 1G6), and the reference value Qref is subtracted from the current heat absorption amount Q of the cooler 2() measured as described above, and the cooler is obtained. The change amount AQ (=Q_Qref) corresponding to the reference value Qref of the heat absorption q of 2〇 (process 丨〇7). Next, the stretching speed v is corrected in accordance with the amount of change in the reference value of the heat absorption amount Q of the cooler 20 (processing 1〇8~^). Fig. 6(a) shows the equation of the stretching speed ;; that is, Fig. 16(b)_ which shows the base value Vpg corresponding to the length (axial position) of the single crystal 1〇 Show the stretch speed correction amount ~ corresponding to < s

7054-9161-PF 27 1362434 Figure showing the length of the single crystal ίο (the position in the axial direction); Fig. 6(c) shows the corrected stretching speed V corresponding to the length of the single crystal 10 (axial position) ) and the graph shown. As shown in FIG. 6(b), in the case where the amount of change in the amount of heat absorbed by the cooler 2 (the reference value Qref of 5 is a positive amount) (that is, the measured amount of heat absorbed Q increases from the reference value Qref) In the case of the case, the tensile speed correction amount Vq has a characteristic u which becomes a positive amount; when the same amount of change ΔQ (=Q-Qref) is a negative amount (that is, the measured endothermic amount q decreases from the reference value Qref) In the case of the case, the tensile speed correction amount Vq has a characteristic L2 which becomes a negative amount. The absolute value of the tensile speed correction amount Vq is a variation amount Δq (=) of the reference value Qref corresponding to the heat absorption amount q of the above-described cooler 20. The absolute value of Q-Qref is proportionally larger. However, as described above, when the amount of change AQ corresponding to the reference value Qref of the heat absorption amount q of the cooler 20 is 3% or less of the reference value Qref, the stretching speed is The correction amount Vq becomes 0. When the same amount of change becomes 4% or more of the reference value Qref, the tensile speed correction amount Vq is a value of 〇.mmmm/min or more and becomes larger in proportion to the absolute value of the same change amount. Set by the method. ^ β sells and changes the tensile speed corresponding to 罝 △ Q ( = f ) Vq (process 108), at the same time reading the program of the stretching speed v (that is, the base value Vpg) (process 109); wherein the amount of change should be the reference value Qref of the heat absorption Q of the cooling H 20. Then, When the target is added (process no), the corrected stretching speed v (= Vpg + Vq) is obtained. That is, 'the change corresponding to the reference value Qref of the heat absorption amount q of the cooler 2G is Δ Q ( - Q -Qref ) is a positive amount (that is, the measurement is sucked

<S

7054-9161-PF 28 1362434 When the heat Q increases from the reference value Qref) τ, the tensile speed ν is corrected by the characteristic L1 增加 which is increased with respect to the base value Vpg; the same amount of change ΔQ (uref) is negative In the case (that is, when the measured suction amount q is lowered from the reference value (four)), the tensile speed v (process m) is corrected by the characteristic L12 which is lowered with respect to the base value Vpg. The stretching machine of the stretching mechanism 4 is adjusted from the tensile speed of 4a to the corrected stretching speed V (= Vpg + Vq) to stretch the single crystal 1 〇. As described above, according to the present embodiment, since the amount of change in the ability of the cooling thief 20 to cool the stone 单 曰曰曰 曰曰曰 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( According to the relationship, the stretching speed V. is corrected by the simple method, and the single crystal 1 〇 which is excellent in reproducibility and free from defects can be stably produced by a simple method. In the first embodiment described above, the stretching speed is corrected by the change in the heat absorption amount q of the cooler 20 in the stretching of the single crystal 1〇, but

When the heat absorption amount Q of the cooler 2G is changed, the change in the heat absorption amount Q of the cooling is predicted, and the tensile speed v is corrected. Fig. 7 is a block diagram showing the control of the second embodiment. As shown in Fig. 7, this control predicts the amount of change in the reference value (kef corresponding to the amount of suction Q of the cooler 2) when the event of the change in the amount of heat absorbed by the cooler 2 is generated. The tensile speed correction amount Vq corresponding to the amount of change in the prediction is obtained, and the reference value Vpg is corrected by the tensile speed correction amount VQ, and the single gentleman crystal 1 is stretched in the corrected stretching v. Prediction of the amount of heat absorbed by the cooler 2 of each event = 7054-9161-PF 29 1362434. The amount of tension correction is pre-memorized in the Δ〇, and the stretching speed program is in the memory device. The May event refers to the change of the Shixi single crystal stretching device 1 (stretching machine); when changing to a different cooler 2〇; the "crystallization 10 is stretched to half" to become polycrystalline again Re-impregnation in the melt 5 and re-dissolving to stretch; or 'moving to the next batch (changing a certain time of the mother-process). The occurrence of the above events is automatically detected and output The type of event and the signal of the event. Or, if there is an event, the operator The operation panel is operated in a dynamic manner to output a signal indicating the type of the event and the event occurrence (Process 201). Next, 1 buy the predicted amount of change AQ of the cooler 2 corresponding to the type of event (= Q-Qref (Process 202). Next, the stretching speed v is corrected in accordance with the reference value of the amount of heat absorption 卩 of the cooler 2 (the corresponding predicted change amount AQ) (Process 2〇3~. Similarly to the first embodiment, The program of the stretching speed v is added and stored in response to the length of the single crystal ( (axis position) (that is, the base value Vpg and the stretching speed correction amount Vq) (Fig. 6(a), (b) Therefore, 'read the reference value corresponding to the heat absorption q corresponding to the cooler 2〇

The stretching speed correction amount % of the predicted change amount of Qref (=Q_Qref) (process 203); the program of reading the stretching speed v (that is, the reference value (process 204). Then, the two are added together to obtain Corrected stretching speed v (~

Vpg + Vq) The corrected stretching speed v is added to and stored in the memory device in response to the length of the single crystal 1 (the direction of the vehicle), as a program for correcting the stretched V (Fig. 6(c)). . also

7054-9161-PF 30

<S 1362434 Therefore, after the occurrence of the event, the stretching speed v of the stretching shaft 43 of the cold drawing mechanism 4 is adjusted using the equation of the corrected stretching speed v, and the early morning crystal 10 is stretched. In other words, the corrected stretching speed v (=Vpg+Vq) corresponding to the length (axial position) of the single crystal of the present single crystal is read, and the pulling tension V is obtained in such a manner that the corrected stretching speed V can be obtained. The stretching speed V of the stretching shaft 43 of the stretching mechanism 4 is stretched, and the single crystal 10 is stretched (process 205). In the second embodiment, as in the case of the third embodiment, when the predicted change amount of the heat absorption amount Q of the cooler 2 is less than 4% of the reference value, the tensile speed v is not corrected; When the amount Δ(} is 4% or more of the reference value q, the stretching speed 纟v is corrected so as to vary from the base value Vpg by 〇· Olmm/min or more, and the 矽 single crystal 矽 is stretched. In the example, although the processing is assumed to be automatic, the processing including the creation of the program or the processing of one of the processing may be performed manually by the manual method. According to the second embodiment, the relationship between the amount of change (AQ) and the other tensile strip correction amount (Vq) when the ability to cool the single crystal 1〇 is cooled by the cooler is known, and according to the In the relationship, the stretching speed V is corrected in response to the change in the prediction. Therefore, it is possible to produce a single crystal having good reproducibility and no defects by a simple method. (Third embodiment) In the first embodiment described above In the case, in the stretching of the single crystal 丨〇, in the cold When the heat absorption q of the benefit 20 is changed from the reference value Qref, the tensile speed V is corrected. However, in the stretching of the single crystal i, the heat absorption Q of the cooler 20 may be changed to offset Change it and return it to the reference

7054-9161-PF 31 1362434 The way to evaluate Qref is to correct the position p of the cooler 2〇. Figure 8 is a block diagram showing the control of the third embodiment. As shown in Fig. 8, this control measures the heat absorption amount q of the cooler 20, and corrects the cooler 2 only by the lift distance Pq corresponding to the difference Δ Q between the measured value Q of the heat absorption Q of the cooler 20 and the reference value Qref. The position is p, and the stretched stone is crystallized 10 early. The specific heat of water C, the reference value Qref of the heat absorption amount Q of the cooler 20, the cold state position program ppg, and the cooler position correction amount pq are previously stored in the memory device. The inlet side cooling water temperature Tin is measured by the thermometer measuring sensor 31 (process 301); the outlet side cooling water temperature Tout is measured by the thermometer measuring sensor 32 (process 302); the outlet side cooling water temperature is used T〇ut subtracts the inlet side cold portion water temperature Tin to obtain Tout-Tin (process 303). On the other hand, by the flow meter 33, the cooling water flow rate f is measured (processing 3〇4). Further, the specific heat c of the water is read from the memory device, and the above formula (1) is performed based on the specific heat c of the water and the Tout_T in as described above and the flow rate f of the cooling water (0 = (1' 〇 111; - The calculation process of 1^)>^>^) is performed to obtain the heat absorption amount Q (kW) of the cooler 2 (process 305). The reference value leaf ef of the heat absorption amount Q of the cooler 2 is read from the memory device (process 306), and is obtained by subtracting the reference value Qref' from the current heat absorption amount Q of the cooler 2〇 measured above. The amount of change Δ q (= Q_Qref) corresponding to the reference value Qref of the heat absorption q of the device 2 is (process 3〇7). Next, the position 2 of the cooler 2 is corrected in accordance with the amount of change AQ corresponding to the reference value Qref of the heat absorption amount Q of the cooler 20 (processing ~ <5

7054-9161-PF 32 1362434 311). The cooler position program Ppg is preset as a reference position of the cooler 20 under the manufacturing conditions in which the defect-free single crystal 10 can be manufactured.

Ppg. The cold block position program (that is, the reference position of the cooler 2) may be set in accordance with the length (axial direction position) of the stone single crystal 1〇 in the same manner as in Fig. 6(a). Painted for cooling

The relationship between the lifting distance pq of the cooler 20 of Qref and the amount of change in the amount of suction of the cooler 2〇. The position where the figure "" will become the reference of the cooler 20 is set to 0. As shown in Fig. 9, as the position of the cooler 2 is lowered, the cooler

2. The heat absorption Q increases; with the position of the cooler 2? Rise: Cold: The heat absorption q of the device 20 is lowered. P because: 匕' reads out the amount of change (10) corresponding to the reference value (4) of the cooler ^ = heat absorption amount Q according to the relationship shown in FIG.

The amount (cooler position correction amount) Pq (processing), at the same time, the readout cooling position...that is, the 'cooler 2〇 reference position, 'processing 3〇9'.) and 'add the two (processing 31〇) ) and find the position of the correction ^ PP continent). That is to say, 'the amount of change in the heat absorption q of the above-mentioned cooler 2G = A2 (the side is a positive amount (ie, the measurement, the measurement) The amount of heat absorbed Q from the reference value (4) is increased from the reference position of the cooler, and the way of rising is corrected by the cooling = 20 position P; in the case of the same amount of change (==Q_Q(6) is negative: (that is, measurement) The amount of heat absorbed by the reference value. Qref is reduced by two.

7054-9161-PF 33

<S 1362434 The position P of the cooler 20 is corrected such that the cooler 20 descends from the cooler reference position ppg (process 311). Further, at the position P of the corrected cooler 20, the single crystal 10 is stretched. In the third embodiment, the predicted change amount Δ Q of the heat absorption amount Q of the cooler 2 is less than that of the first embodiment. When the reference value q is 4%, the position P of the cooler 20 is not corrected, and the same predicted change amount Δ q is reached.

In the case of 4% or more of Q, the position p of the cooler 2 is corrected and the 矽 single crystal 10 is stretched. As described above, according to the third embodiment, it is understood that the amount of change (Δ(1), the correction amount (Pq) with the cooler position P is changed by the ability of the cold unit 20 to cool the single crystal 1 〇. Since the relationship p is corrected based on the relationship, the position p of the cooler 20 is corrected. Therefore, it is possible to stably manufacture the single crystal J 〇 which is excellent in reproducibility and free from defects by a simple method. (Fourth Embodiment)

Further, in the third embodiment described above, the position p of the cooler 20 is corrected by capturing the change in the heat absorption amount Q of the cold unit 2 in the stretching of the single crystal. However, when the heat absorption amount q of the cooler 20 changes, the change in the heat absorption amount Q of the cooler 20 can be predicted, and the position p of the cooler 2G can be corrected. Figure 1 is a control block diagram of the embodiment of Figure 2. As shown in Fig. 10, this control produces a change in the amount of suction Q of the cooler 20 = the amount of heat absorbed by the pre-sound 20. Reference... For the cooling position correction 眚... corresponding to the predicted change f, the Pq, the straw is corrected by the cooler position correction amount PQ <s

7054-9161-PF 34 1362434 State position ppg of state 20, and in the corrected cooler position p stretch 矽 single crystal 10 〇 each event of the cooler 2 吸 heat absorption ^ predicted change △ Q The cooler position program and the cooler position correction amount pq are pre-memorized in the memory device. The occurrence of an event is automatically detected and a signal indicating the type of event and the occurrence of the event is output. Alternatively, if an event occurs, the operator manually operates the operation panel and outputs a signal indicating the type of the event and the occurrence of the event (process 401). & Next, the pre-/ther change amount Δq (=Q_Qref) of the amount of heat absorption q of the cooler 2 corresponding to the type of event is read (process 4〇2). Next, the position p to the cooler 2 is corrected in accordance with the predicted change amount AQ corresponding to the reference value of the heat absorption amount Q of the cooler 20 (processes 403 to 405). In the same manner as in the third embodiment, the chiller position program (that is, the reference position Ppg of the cold packer 20) is set, and at the same time, in response to the suction of the cooler 2

The change in the heat Q is added and the cooler position correction amount (cooler lift amount) Pq is added and stored (Fig. 9). Therefore, the predicted change of the reference value Q ef corresponding to the heat absorption amount Q of the cooler 2 is read (1) - (4). The cooler position correction amount Pq (process 403); the program for selling the cooler position (that is, the reference position Ppg of the cooler) (processing 4〇4). Next, the two are added to find the corrected cooler position P (= Ppg + pq). The corrected chiller position p is a program that has been recalled to the memory device as a modified chiller position p. Therefore, after the event occurs, use the corrected cooler position P.

7054-9161-PF 35

<S 1362434 The position p of the cooler 20 is adjusted and the 矽 single knot 曰曰 1〇 is stretched. That is, after reading the corrected cooler position P (= Ppg ten pq), the cooler 2 升降 is raised and lowered to the corrected cooler position P', and the single crystal 1 矽 is stretched (the treatment 405). In the fourth embodiment, as in the first embodiment, the predicted change amount Δq of the heat absorption amount Q of the cooler 20 is less than 4% of the reference value Q, and the position p of the cooler 20 is not corrected; When the amount of change ΔQ reaches 4% or more of the reference value Q, the position p of the cooler 2〇 is corrected to stretch the single crystal 10. In the present embodiment, although the processing is assumed to be automatic, the processing including the creation of the program may be performed manually, or the processing of one of the processing may be performed manually. . As described above, according to the fourth embodiment, it is understood that the amount of change (ΔQ) when the capacity of the single crystal 1 〇 is changed by the cooler 2, and the position correction of the cooler (Pq) The relationship 'is based on the relationship and corrects the cooler position P in response to the change in the prediction'. Therefore, it is possible to manufacture a single crystal j 再现 which is excellent in reproducibility and free from defects by a simple method. (Fifth Embodiment) In the first embodiment described above, the stretching speed V is corrected in the case where the heat absorption amount Q of the cooler 20 is changed from the reference value Qref in the stretching of the stone single crystal 1 〇. However, in the case where the heat absorption Q of the cooler 2 变化 is changed in the stretching of the single crystal of the stone, the change is made to offset the change and return it to the reference value.

The Qref mode can also correct the distance D from the lower end of the heat shield 8 to the melt 5.

7054-9161-PF 36 1362434 Figure 11 is a block diagram showing the control of the fifth embodiment. As shown in FIG. 8, the control unit measures the heat absorption amount q of the cooler 20, and corrects the heat shielding plate 8 only by the distance Dq corresponding to the difference ΔQ between the measured value Q of the heat absorption Q of the cooler 20 and the reference value Qrei. The distance from the lower end to the melt 5 is D' and the tensile crystallization is 1 〇. The specific heat of the water c, the reference value Qref of the heat absorption Q of the cooler 20, the program Dpg of the distance D from the lower end of the heat shield plate 8 to the melt 5, and the correction amount Dq of the distance D are stored in advance in the memory device.

That is, the inlet side cooling water temperature Tin is measured by the thermometer measuring sensor 31 (process 501); the outlet side cooling water temperature Tout is measured by the thermometer measuring sensor 32 (process 502); The side cooling water temperature T〇ut is subtracted from the inlet side cooling water temperature Tin to determine T〇ut-Tin (treatment 5〇3). On the other hand, 'the flow rate f of the cooling water is measured by the flow meter 33 (processing 5〇4) and the specific heat according to the water c is read, and the specific heat of the water and the Tout-Tin as described above and the cooling water are read from the memory device. The flow rate f is subjected to the above-described calculation of the equation (Q = (Tou1: -Tin) xfxc) to obtain the heat absorption amount Q (kW) of the cooler 2 (process 505). The cooler 20 is read from the memory device. The reference value Qref of the heat absorption Q (process 506), the reference heat absorption Q of the cooler 2〇 measured as described above is subtracted from the reference value Qref, and the reference to the heat absorption amount of the cooler 2 is obtained. The value Qref corresponds to the amount of change (=Q_Qref) (process 5〇7), and then, the lower end of the heat shield plate 8 to the melt 5 is corrected in accordance with the amount of change corresponding to the reference value_ of the heat absorption amount Q of the cooler 20. Distance D (hereinafter referred to as distance D) (processing 5〇8~511).

7054-9161-PF 37 1362434 The distance D program Dpg is preset as the reference distance Dpg under the manufacturing conditions in which the defect-free single crystal 10 can be produced. The distance D equation (i.e., the reference distance Dpg) may be set in accordance with the length (axial direction position) of the stone singular crystal 1 同样 in the same manner as in Fig. 6(a). Fig. 1 is a diagram showing the change of the amount of heat correction Q of the cooler 20 to the distance correction amount j)q of the spring value Qref and the heat absorption amount q of the cooler 20.

A graph of the amount (the rate of increase in heat absorption (%)). In Fig. 13, the position which is the reference of the distance D is defined as 〇. The relationship of FIG. 13 can be obtained according to the relationship shown in FIG. 2 and the relationship as shown in FIG. 4, wherein the relationship described in FIG. 4 means that the heat can be manufactured once the heat absorption amount Q of the cooler 2 is lowered. The tensile speed V of the single crystal of the defect-free single crystal is also lowered. Fig. 1 2 is a graph showing the relationship between the amount of change in the distance D from the lower end of the heat shielding plate 8 to the melt 5 and the amount of change in the tensile speed V of the single crystal enthalpy which can be produced without defects. As shown in Fig. 12, the more the distance D is increased, the lower the stretching speed V of the ruthenium-free single crystal can be produced. On the other hand, as shown in Fig. 4, once the heat absorption amount q of the cooler 2 is lowered, the tensile speed V at which the defect-free stone single crystal 10 can be produced is also lowered. Therefore, the correspondence relationship shown in Fig. 13 can be obtained from the above two relationships'. Therefore, the distance D correction amount Dq with respect to the change amount of the reference value Qref corresponding to the heat absorption amount Q of the cooler 20 is read (process 508), and the read distance d is read. Program (ie, 基准, datum distance Dpg) (Process 509). Further, the two are added (process 510) to obtain a corrected distance D (two Dpg + Dq). In other words, in

7054-9161-PF 38 1362434 The case where the amount of change (=Q-Qref) corresponding to the parameter Qref of the heat absorption amount Q of the cooler 20 is a positive amount (that is, the case where the measured heat absorption amount Q increases from the reference value Qref) In the case where the distance D is expanded from the reference distance Dpg, the distance D is corrected; when the same amount of change AQ (=Q_Qref) is a negative amount (that is, when the measured endothermic amount Q is decreased from the reference value Qref), The distance D is corrected such that the distance D is reduced from the reference distance Dpg (process 511).

Moreover, the single crystal yttrium is stretched by the corrected distance D. In the fifth embodiment, as in the first embodiment, when the change f W of the heat absorption amount Q of the cooler 20 is less than the reference value of 4%, the distance D is not corrected; and the same change amount Δ Q reaches the reference value Q. In the case of 4% or more, the distance D is corrected and the single crystal is stretched by 1 〇. As described above, according to the fifth embodiment, the amount of change (AQ) when the ability to cool the single crystal u by the cooler 2 is changed, and the distance from the lower end of the heat shielding plate 8 to the melt 5 is known. According to the relationship between the correction amount (Dq) of D and the correction of the distance D due to the above relationship, it is possible to stably manufacture a single crystal 1 〇 which is excellent in reproducibility and free from defects by a simple method. (Sixth embodiment) In the fifth embodiment described above, the change in the heat absorption amount Q of the cooler 20 is captured in the stretching of the single crystal 1 而 to correct the distance from the lower end of the heat shielding plate 8 to the melt 5 D. However, it is also possible to predict the change in the amount of heat absorption Q of the cooler 20 when the heat absorption amount of the cooler 2 is changed, and correct the same distance D. Figure 14 is a block diagram showing the control of the sixth embodiment.

7054-9161-PF 39 1362434 ® 14 This control is not in the cooler 2. The heat is absorbed. At the time of generation, the reference value of the heat absorption amount Q of the cooler 2G is predicted. _ Pair: The marginalization amount is finally obtained. The distance 夕 positive amount DQ′ corresponding to the change amount of the prediction (4) is corrected by the distance correction amount Dq. Dpg, and stretched the single crystal 10 by the distance D: The predicted change amount Δ Q of the heat absorption q of the cold P state 20 per time event, the distance D program, and the correction amount Dq of the distance D are stored in advance in the memory device. The occurrence of an event is automatically detected and a message indicating the type of event and the occurrence of the event is output. Alternatively, the operator manually operates the operation panel to output a signal indicating the type of the event and the occurrence of the event (process 601). Next, the predicted change amount AQ (==Q_Qref ) of the amount of heat absorption Q of the cooler 20 corresponding to the type of the event is read (process 6〇2). Then, the distance D to the cooler 2 修正 is corrected in accordance with the predicted change amount Δ q corresponding to the reference value Qref of the heat absorption amount Q of the cooler 2 (processing 6〇3 to 6 0 5 ) 同样 is the same as in the fifth embodiment In the ground, the distance d program (that is, the reference distance Dpg) is set, and the distance correction amount Dq (cooler lift amount) pq is added and stored in response to the amount of change in the heat absorption amount q of the cooler 2 (Fig. 13). Therefore, the distance correction amount of the predicted change amount (=Q_Qref) corresponding to the reference value Qref of the heat absorption amount Q of the cooler 20 is extracted (process 603); the program of the read distance d (that is, the reference distance Dpg) ( Process 604). Next, the two are added together to obtain a corrected distance D (= Dpg + Dq). The corrected distance D is stored in the memory device as a program for correcting the distance 7054-9161-PF 40 1362434 D. Therefore, after the event occurs, the distance D is adjusted using the program for correcting the distance D, and the single crystal 1 矽 is stretched. That is to say, the correction distance D (= DPg + Dq) is read. In order to become the correction distance d, the position of the upper and lower directions of the quartz or the upper and lower directions of the heat shielding plate 8 is adjusted, and the single crystal 10 is stretched ( Process 605).

In the sixth embodiment, as in the first embodiment, when the predicted change amount Δ Q of the heat absorption amount Q of the cooler is less than 4% of the reference value q, the distance D is not corrected; the same predicted change amount Δ When q is 4% or more of the reference value ,, the distance ]) is corrected and the 矽 single crystal 丨〇 is stretched. In this embodiment, although the processing is assumed to be automatic, the processing including the creation of the program or the processing of a part of each processing by manual means may be performed manually. As described above, according to the sixth embodiment, the amount of change (ΔQ) when the ability to cool the single crystal 10 by the cooler is changed, and the distance from the lower end of the heat shielding plate 8 to the melt 5 is known. Since the relationship between the correction amount (Dq) of D is corrected based on the above relationship and the distance D is corrected in accordance with the predicted change amount, it is possible to stably manufacture the single crystal 10 which is excellent in reproducibility and free from defects by a simple method. In the embodiment, although the water-cooling type cooler is exemplified, the refrigerant used for the cooler may be arbitrarily selected, or may be capable of absorbing heat from the single crystal 10 and cooling the heat of the single crystal 1 〇. Switch. BRIEF DESCRIPTION OF THE DRAWINGS [Fig. 1] Fig. 1 is a schematic view showing the configuration of a single crystal stretching apparatus of the embodiment 7054-9161-PF 41 1362434. Fig. 2 is a view showing water cooling used in the embodiment. The composition of the water circuit is round. 1 7 but the cooling of the stolen = 3] Figure 3 shows the (4) axis position of the single crystal * ·, ϊ relationship shown in the figure of each ingot. ° [Figure 4] Figure 4 (a) Depicting the basis of the crystallization of the singular crystallization of the stone (b) value / /, relative

N^'N0.3^0.4.N〇 5^ζ; 矽 矽 社 社 社 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日

The relationship between the axial direction of the early crystallization of the stone and the amount of change with respect to the stretching speed U is shown in N〇 6 , N〇. 7, N(). The heart of the day is a good gesture [Figure 5] Figure 5 is the first! A control block diagram of an embodiment. [Fig. 6] Fig. 6(a) is a diagram showing the drawing speed v; that is, the base value corresponds to the length of the single crystal (the axis direction is 1 " and the displayed figure; Fig. 6 (b) shows a graph in which the stretching speed correction amount is displayed corresponding to the length of the single crystal (axial position); gj 6(c) shows that the corrected stretching speed corresponds to the length of the single crystal Fig. 7 is a block diagram showing the control of the second embodiment. Fig. 8 is a diagram showing the control environment of the eighth embodiment. [Fig. 9] Fig. 9 is a view showing a control block diagram of the eighth embodiment. Figure 9 is a diagram showing the relationship between the distance between the lowering of the cooler and the amount of heat absorbed by the cooler. [Fig. 10] Fig. 1 is a block diagram showing the fourth embodiment. [Fig. 11] Fig. 11 The control control chart of the fifth embodiment is shown. 7054-9161-PF 42 1362434 [Fig. 12] Fig. 12 is a diagram showing the change of the distance from the lower end of the heat shielding plate to the melt and the possibility of producing a defect-free stone single crystal. The relationship between the amount of change in the stretching speed. [Fig. 13] Fig. 13 is a diagram showing the 7F in order to control the heat absorption of the cooler to a reference value. Fig. 14 is a control block diagram showing the sixth embodiment.

[Main component symbol description] 1 Shixi single crystal manufacturing equipment 2 CZ furnace 10 矽 single crystal 20 cooler

7054-9161-PF 43

Claims (1)

X. Patent application scope 1. A semiconductor single crystal crucible, a skinny, a crucible, a gasification method, in which a cooling is arranged around a circumference of a semiconductor single crystal that is stretched from a melt. Cooling the semiconductor single crystal by a cooler and stretching the grown semiconductor crystal to produce a semiconductor single crystal, the method for manufacturing the semiconductor single crystal includes: except for the manufacturing condition that can be used to manufacture a defect-free semiconductor single crystal The reference value of the heat absorption amount of the cooler and the base value of the tensile speed are also preset to the amount of change corresponding to the reference value of the heat absorption amount of the cooler for manufacturing the defect-free semiconductor single crystal and the stretching The relationship between the amount of change in the base value of the speed, the amount of heat absorbed by the cooler, and the amount of change in the tensile speed corresponding to the difference between the measured value of the heat absorption of the cooler and the reference value, based on the relationship, The amount of change was determined to correct the stretching speed to stretch the semiconductor single crystal. 2. The method for producing a semiconductor single crystal according to the invention of claim i, wherein 'the correction stretching speed is 'when the difference between the measured value of the heat absorption amount of the cooler and the reference value is 4% or more of the reference value The semiconductor single crystal is stretched. 3. The method for producing a semiconductor single crystal according to the first aspect of the invention, wherein, in the case where the difference between the measured value of the heat absorption of the cooler and the reference value is 4% or more of the reference value, The amount of change of 0.1 mm/min or more is corrected by the stretching speed to stretch the semiconductor single crystal. 7054-9161-PF 44 4.—1362434 A method for producing a semiconductor single crystal in which a liquid crystal of a single crystal stretched from a melt is solidified, and is cooled by a cooler. Cooling semiconductor single crystal, stretching into ^ 〇D ^ a L A or long bucket 'conductor early crystallization to make semiconductor early crystallization, the semiconductor single-dip Λ m early, the manufacturing method of the mouth includes: It is set in the reference value of 锢, A u & , κ, plus 乂 1 & defect-free semiconductor single crystal... and the basis of the stretching speed m, ··. . The relationship between the amount of change in the reference value and the amount of change corresponding to the base value of the tensile speed for the cooling of the single crystal for the production of the defect-free semiconductor, and the change in the amount of heat absorbed by the cooler , predicting the amount of change corresponding to the reference value of the heat absorption of the cooler, and obtaining μ according to the above relationship, +. 2S M t is the amount of change in the stretching degree corresponding to the amount of change in the above prediction, only by the request The stretching speed was corrected by the amount of change to stretch the single crystal.丄5. > The method for producing a semiconductor single crystal according to the fourth aspect of the invention, wherein 'the corrected stretching speed is 'when the predicted change amount of the heat absorption amount of the cooler is 4% or more of the reference value The semiconductor single crystal is stretched. 6. The method for producing a semiconductor single crystal according to claim 4, wherein, in the case where the predicted change amount of the heat absorption amount of the cooler is 4/ or more of the reference value, only by 〇 The amount of change in 〇1 coffee/claw i〇 is corrected by the stretching speed to stretch the semiconductor single crystal. 7. A method for producing a semiconductor single crystal, wherein a cooler is lifted and lowered around a semiconductor single crystal stretched from a melt 7054-9161-PF 45 1362434, and a cooler is cooled by a cooler Single crystal, stretching and growing a semiconductor single crystal to produce a semiconductor single crystal, the method for manufacturing the semiconductor single crystal comprising: a reference value of a heat sink of a cooler which is set in advance under a manufacturing condition capable of producing a defect-free semiconductor single crystal, With the reference position of the cooler, The relationship between the lifting distance of the cooler and the amount of change in the amount of heat absorbed by the cooler is also set in advance, so that the heat absorption amount of the cooler is set to a reference value, the heat absorption amount of the cooler is measured, and the suction of the cooler is obtained according to the above relationship. The difference between the calorific value of the calorific value and the reference value corresponds to the lifting distance of the cooler, and the position of the cooler is corrected only by the obtained lifting distance to stretch the semiconductor single crystal. 8. The method for producing a semiconductor single crystal according to claim 7, wherein the correction cooler is used when the difference between the measured value of the heat absorption of the cooler and the reference value is 4% or more of the reference value. The semiconductor single crystal is stretched in position. A method for producing a semiconductor single crystal, wherein a cooler is lifted and lowered around a semiconductor single crystal stretched from a melt, and a semiconductor single junction g is cooled by a cooler to stretch a semiconductor Single crystal to produce a semiconductor single crystal, the method for manufacturing the semiconductor single crystal includes: a reference value of a heat sink of a cold header which is set in advance under conditions capable of producing a semiconductor single crystal without defects, and a reference of a cooler Position, 7054-9161-PF 46 ^ Also preset the lifting distance of the cooler, the relationship between the heat absorption of the cooler and the 'heating' of the cooler to set the reference value of the cooler, - sucking in the cooler When the amount of heat changes, the amount of change corresponding to the reference value of the *, ', and the inside of the cooler is predicted, and the lift distance of the cooler corresponding to the amount of change in the above prediction is obtained based on the above relationship, only by the request The position of the cooler is corrected by the lifting distance to pull the %% semiconductor semiconductor. ^1〇. The method for manufacturing a semiconductor single crystal according to claim 9, wherein the position of the cooler is corrected in the case where the predicted change amount of the heat absorption amount of the cooler is a reference value of 4/6 or more. The semiconductor single crystal is stretched. - a method for producing a semiconductor single crystal in which a cooler is disposed around a semiconductor monocrystal that is stretched and stretched, and a semiconductor single crystal is cooled by cooling, and a semiconductor single crystal is stretched and grown. The manufacturing method for manufacturing the semiconductor single crystal includes: a reference value of a heat sink of a cooler which is set in advance under a manufacturing condition capable of producing a defect-free semiconductor single crystal, and a lower end of the self-heating shield to The reference distance of the melt is also preset to the relationship between the amount of correction from the lower end of the heat shield to the melt and the amount of heat absorbed by the cold pack to set the reference value of the heat of the cooler, 'measuring cooler According to the above relationship, the distance between the measured value of the heat absorption of the cooler and the value of the reference value of the 7054-9161-PF 47 is determined from the distance of the lower end of the (four) shield i melt, _ only by The distance correction amount is obtained to correct the distance from the lower end of the heat shield plate to the melt to stretch the semiconductor single crystal. • ^丨2. The method for manufacturing a semiconductor single crystal according to claim 11 of the patent application, wherein, in the case where the measured value of the heat absorption of the cooler and the reference value are > 4% or more of the value , correcting the distance from the lower end of the heat shielding plate to the melt, and stretching the semiconductor single crystal.丨3. A method for producing a semiconductor single crystal, wherein a cooler is disposed around a semiconductor single crystal stretched from a melt T, and a semiconductor semiconductor single crystal is stretched to form a semiconductor single crystal by cooling Manufacturing a semiconductor single crystal, the semiconductor single crystal manufacturing method comprising: - a pre-sighing reference value of a heat sink of a cooler under a manufacturing condition capable of producing a defect-free semiconductor single crystal, and a lower end of the self-heating shield to The reference distance of the melt, the distance correction to the melt, and the 'heat absorption of the cooler are also preset to the lower end of the heat shield The reference value of the amount of change in the amount of heat absorbed by the cooler, the amount of change corresponding to the reference value of the amount of heat absorbed by the heat of the company, based on the above relationship, is determined by the above relationship + the female mountain u 'six' pre- The amount of distance correction from the lower part of the self-heating cover plate to the melt in the skin of the skin, and the lower end to the crystal: the distance of the self-heating shield TO liquid is corrected by the distance correction amount obtained to stretch Single crystal of semiconductor. 14. The semiconductor sheet as described in claim 13 of the patent scope 7054-9161-PF 48 1362434 In the manufacturing method, in the case where the predicted change amount of the heat absorption amount of the cooler is 4% or more of the reference value, the distance from the lower end of the heat shielding plate to the melt is corrected to stretch the semiconductor single crystal. 7054-9161-PF 49